KR20160136735A - Preparing method of polishing pad - Google Patents
Preparing method of polishing pad Download PDFInfo
- Publication number
- KR20160136735A KR20160136735A KR1020150070673A KR20150070673A KR20160136735A KR 20160136735 A KR20160136735 A KR 20160136735A KR 1020150070673 A KR1020150070673 A KR 1020150070673A KR 20150070673 A KR20150070673 A KR 20150070673A KR 20160136735 A KR20160136735 A KR 20160136735A
- Authority
- KR
- South Korea
- Prior art keywords
- polishing pad
- polymer resin
- resin solution
- sublimable material
- polishing
- Prior art date
Links
- 238000007517 polishing process Methods 0.000 title description 2
- 238000005498 polishing Methods 0.000 claims abstract description 68
- 239000002952 polymeric resin Substances 0.000 claims abstract description 46
- 229920003002 synthetic resin Polymers 0.000 claims abstract description 46
- 239000000463 material Substances 0.000 claims abstract description 45
- 239000011148 porous material Substances 0.000 claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 claims abstract description 23
- 239000000126 substance Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 16
- -1 4,4'-methylene-bis (2-chloroaniline) methylene, 4,4'-methylene-bis- (3-chloro-2,6-diethylaniline) Chemical compound 0.000 claims description 12
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 12
- 239000003795 chemical substances by application Substances 0.000 claims description 12
- 238000000465 moulding Methods 0.000 claims description 12
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 claims description 8
- 241000723346 Cinnamomum camphora Species 0.000 claims description 7
- 229960000846 camphor Drugs 0.000 claims description 7
- 229930008380 camphor Natural products 0.000 claims description 7
- DSSYKIVIOFKYAU-XCBNKYQSSA-N (R)-camphor Chemical compound C1C[C@@]2(C)C(=O)C[C@@H]1C2(C)C DSSYKIVIOFKYAU-XCBNKYQSSA-N 0.000 claims description 6
- 239000000843 powder Substances 0.000 claims description 5
- 235000011089 carbon dioxide Nutrition 0.000 claims description 4
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 claims description 4
- 229920001451 polypropylene glycol Polymers 0.000 claims description 4
- ALYNCZNDIQEVRV-UHFFFAOYSA-N 4-aminobenzoic acid Chemical compound NC1=CC=C(C(O)=O)C=C1 ALYNCZNDIQEVRV-UHFFFAOYSA-N 0.000 claims description 3
- PISLZQACAJMAIO-UHFFFAOYSA-N 2,4-diethyl-6-methylbenzene-1,3-diamine Chemical compound CCC1=CC(C)=C(N)C(CC)=C1N PISLZQACAJMAIO-UHFFFAOYSA-N 0.000 claims description 2
- WABOBVQONKAELR-UHFFFAOYSA-N 2-methyl-4-(2-methylbutan-2-yl)benzene-1,3-diamine Chemical compound CCC(C)(C)C1=CC=C(N)C(C)=C1N WABOBVQONKAELR-UHFFFAOYSA-N 0.000 claims description 2
- YBRVSVVVWCFQMG-UHFFFAOYSA-N 4,4'-diaminodiphenylmethane Chemical compound C1=CC(N)=CC=C1CC1=CC=C(N)C=C1 YBRVSVVVWCFQMG-UHFFFAOYSA-N 0.000 claims description 2
- AOFIWCXMXPVSAZ-UHFFFAOYSA-N 4-methyl-2,6-bis(methylsulfanyl)benzene-1,3-diamine Chemical compound CSC1=CC(C)=C(N)C(SC)=C1N AOFIWCXMXPVSAZ-UHFFFAOYSA-N 0.000 claims description 2
- YJIHNAUJGMTCFJ-UHFFFAOYSA-N 4-methyl-6-(2-methylbutan-2-yl)benzene-1,3-diamine Chemical compound CCC(C)(C)C1=CC(C)=C(N)C=C1N YJIHNAUJGMTCFJ-UHFFFAOYSA-N 0.000 claims description 2
- DVPHIKHMYFQLKF-UHFFFAOYSA-N 4-tert-butyl-2-methylbenzene-1,3-diamine Chemical compound CC1=C(N)C=CC(C(C)(C)C)=C1N DVPHIKHMYFQLKF-UHFFFAOYSA-N 0.000 claims description 2
- POAHJTISJZSSFK-UHFFFAOYSA-N chloro(phenyl)methanediamine Chemical compound NC(N)(Cl)C1=CC=CC=C1 POAHJTISJZSSFK-UHFFFAOYSA-N 0.000 claims description 2
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 claims 1
- 239000004848 polyfunctional curative Substances 0.000 claims 1
- 238000000859 sublimation Methods 0.000 abstract description 12
- 230000008022 sublimation Effects 0.000 abstract description 12
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 15
- 239000004088 foaming agent Substances 0.000 description 14
- 235000012431 wafers Nutrition 0.000 description 14
- 239000002002 slurry Substances 0.000 description 9
- 239000006260 foam Substances 0.000 description 7
- 239000012948 isocyanate Substances 0.000 description 7
- 239000005056 polyisocyanate Substances 0.000 description 7
- 229920001228 polyisocyanate Polymers 0.000 description 7
- 229920005862 polyol Polymers 0.000 description 6
- 150000003077 polyols Chemical class 0.000 description 6
- 239000004814 polyurethane Substances 0.000 description 6
- 229920002635 polyurethane Polymers 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000000654 additive Substances 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 5
- 150000002513 isocyanates Chemical class 0.000 description 5
- 238000003756 stirring Methods 0.000 description 5
- 239000004604 Blowing Agent Substances 0.000 description 4
- 229910002092 carbon dioxide Inorganic materials 0.000 description 4
- 239000001569 carbon dioxide Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 239000000556 agonist Substances 0.000 description 2
- 125000002723 alicyclic group Chemical group 0.000 description 2
- 125000001931 aliphatic group Chemical group 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 150000004985 diamines Chemical class 0.000 description 2
- 150000002009 diols Chemical class 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000004005 microsphere Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 229920005749 polyurethane resin Polymers 0.000 description 2
- YPFDHNVEDLHUCE-UHFFFAOYSA-N propane-1,3-diol Chemical compound OCCCO YPFDHNVEDLHUCE-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- BSYVFGQQLJNJJG-UHFFFAOYSA-N 2-[2-(2-aminophenyl)sulfanylethylsulfanyl]aniline Chemical compound NC1=CC=CC=C1SCCSC1=CC=CC=C1N BSYVFGQQLJNJJG-UHFFFAOYSA-N 0.000 description 1
- UPMLOUAZCHDJJD-UHFFFAOYSA-N 4,4'-Diphenylmethane Diisocyanate Chemical compound C1=CC(N=C=O)=CC=C1CC1=CC=C(N=C=O)C=C1 UPMLOUAZCHDJJD-UHFFFAOYSA-N 0.000 description 1
- IBOFVQJTBBUKMU-UHFFFAOYSA-N 4,4'-methylene-bis-(2-chloroaniline) Chemical compound C1=C(Cl)C(N)=CC=C1CC1=CC=C(N)C(Cl)=C1 IBOFVQJTBBUKMU-UHFFFAOYSA-N 0.000 description 1
- VIOMIGLBMQVNLY-UHFFFAOYSA-N 4-[(4-amino-2-chloro-3,5-diethylphenyl)methyl]-3-chloro-2,6-diethylaniline Chemical compound CCC1=C(N)C(CC)=CC(CC=2C(=C(CC)C(N)=C(CC)C=2)Cl)=C1Cl VIOMIGLBMQVNLY-UHFFFAOYSA-N 0.000 description 1
- HLDUVPFXLWEZOG-UHFFFAOYSA-N 4-tert-butyl-6-methylbenzene-1,3-diamine Chemical compound CC1=CC(C(C)(C)C)=C(N)C=C1N HLDUVPFXLWEZOG-UHFFFAOYSA-N 0.000 description 1
- 239000005057 Hexamethylene diisocyanate Substances 0.000 description 1
- 239000005058 Isophorone diisocyanate Substances 0.000 description 1
- 241001112258 Moca Species 0.000 description 1
- 229920001730 Moisture cure polyurethane Polymers 0.000 description 1
- 229920000265 Polyparaphenylene Polymers 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 229920002396 Polyurea Polymers 0.000 description 1
- 239000002671 adjuvant Substances 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 239000012736 aqueous medium Substances 0.000 description 1
- 239000012752 auxiliary agent Substances 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 239000002666 chemical blowing agent Substances 0.000 description 1
- 239000000701 coagulant Substances 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- RRAMGCGOFNQTLD-UHFFFAOYSA-N hexamethylene diisocyanate Chemical compound O=C=NCCCCCCN=C=O RRAMGCGOFNQTLD-UHFFFAOYSA-N 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- NIMLQBUJDJZYEJ-UHFFFAOYSA-N isophorone diisocyanate Chemical compound CC1(C)CC(N=C=O)CC(C)(CN=C=O)C1 NIMLQBUJDJZYEJ-UHFFFAOYSA-N 0.000 description 1
- 238000007521 mechanical polishing technique Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000002894 organic compounds Chemical group 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 239000003002 pH adjusting agent Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000010189 synthetic method Methods 0.000 description 1
- DVKJHBMWWAPEIU-UHFFFAOYSA-N toluene 2,4-diisocyanate Chemical compound CC1=CC=C(N=C=O)C=C1N=C=O DVKJHBMWWAPEIU-UHFFFAOYSA-N 0.000 description 1
- 150000003673 urethanes Chemical class 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/0645—Block copolymer
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
The present invention relates to a method of producing a polishing pad that forms pores using a polymer resin solution and a sublimable material.
The semiconductor device is formed of a flat and thin wafer using a semiconductor material such as silicon. The wafer should be polished to have a sufficiently flat surface with no defects or minimal defects. Several chemical, electrochemical, and chemical mechanical polishing techniques are used to polish wafers. For many years, optical lenses and semiconductor wafers have been polished by chemical-mechanical means. In particular, rapid advances in semiconductor technology have resulted in the advent of high-scale large scale integration (VLSI) and high-end large scale integration (ULSI) circuits, which allows more devices to be packed into smaller areas within a semiconductor substrate. The higher the density of the device, the higher the flatness is required.
In "chemical mechanical polishing " (CMP), a polishing pad made of a urethane material is used with the slurry to polish the wafer. The slurry includes abrasive particles such as aluminum oxide, cerium oxide, or silica particles dispersed in an aqueous medium. The abrasive particles generally have a size of 100 nm to 200 nm. Other agonists such as surface agonists, oxidizing agents, or pH adjusting agents are present in the slurry. The urethane pads are woven so as to have a channel or a perforation to assist in the distribution of the slurry on the entire surface of the pad and wafer and the removal of slurry and slurry debris. In one type of polishing pad, spherical microspheres of the cavity are distributed throughout the urethane material, and when the pad surface is worn due to use, the microspheres continue to provide reproducible surface texture.
Conventional polishing pads are formed from a foam sheet or a felt impregnated with a polymeric material. However, such substrate pads, when applied to the forces appearing during the polishing operation, become too soft and cause the pads to recess in the substrate to be polished causing excessive polishing. As a result, the surface of the embedded circuit is excessively polished resulting in unwanted recesses known as dishing. Further, such a polishing pad absorbs abrasive fluid, and is compressed during polishing operation and deformed in all directions, so that the pad becomes too soft.
Korean Patent No. 10-1109376 provides a chemical-mechanical polishing pad containing an open cell.
And adding a sublimable substance to the polymer resin solution so that the sublimable substance forms pores on the polymer resin solution. In the case of manufacturing the polishing pad by the above-described manufacturing method, it is possible to reduce the scratches on the polished surface by reducing the foreign matter remaining on the produced polishing pad, thereby improving the polishing rate and uniformity. Further, the void structure on the polishing surface can be easily controlled, and the fluidity of the abrasive particles in the slurry can be increased.
However, the problems to be solved by the present invention are not limited to the above-mentioned problems, and other problems not mentioned can be clearly understood by those skilled in the art from the following description.
According to a first aspect of the present invention, there is provided a method for producing a polymer solution, comprising the steps of: adding a sublimable substance onto a polymer resin solution; sublimating the sublimable substance to form pores on the polymer resin solution; and molding the polymer resin solution , And a method of manufacturing a polishing pad.
According to an embodiment of the present invention, there is provided a method for producing a polymer resin, comprising the steps of: adding a sublimable substance onto a polymer resin solution; sublimating the sublimable substance to form pores on the polymer resin solution; The polishing pad manufactured using the method of manufacturing the polishing pad including the polishing pad can provide a polishing pad having excellent polishing performance because the foaming agent for forming the pores does not remain in the polishing pad.
Conventionally, pores in pads have been formed using physical or chemical foaming agents in the process of manufacturing porous polishing pads. However, when a porous polishing pad manufactured using a physical foaming agent is used in a chemical mechanical polishing process, the physical foaming agent often remains on the pad and damages the wafer frequently. In addition, when a chemical foaming agent is used, carbon dioxide generated at this time is soluble in polyurethane, and is discharged from the urethane foam structure by diffusion, resulting in a decrease in the gas pressure in the urethane foam structure, thereby deforming the shape of the urethane foam there was. Also, the polyurea formed at the same time as the carbon dioxide also caused a problem of weakening the strength of the urethane foam structure.
In this regard, in the present invention, bubbles are generated by the phase change of the sublimable material on the polymer resin solution to form pores in the pad. Unlike the case where pores are formed in the pads using the conventional foaming agent, It is possible to achieve the effect that the foreign material does not remain in the finished product, the strength of the urethane foam is not weakened, and therefore, the polishing pad maintaining a constant physical property can be produced. In addition, when the gas is generated by the phase change of the sublimable material of the present invention, the sublimation rate of the sublimable material can be controlled by the temperature of the sublimation condition, the stirring speed, and the stirring time, The porosity can be easily controlled.
1 is a flow chart of manufacturing a polishing pad according to one embodiment of the present application.
FIG. 2 is a schematic view showing that pores are formed in a polymer resin solution in the course of manufacturing a polishing pad according to one embodiment of the present invention.
Hereinafter, embodiments and examples of the present invention will be described in detail with reference to the accompanying drawings, which will be readily apparent to those skilled in the art to which the present invention pertains.
It should be understood, however, that the present invention may be embodied in many different forms and is not limited to the embodiments and examples described herein. In order to clearly illustrate the present invention, parts not related to the description are omitted, and similar parts are denoted by like reference characters throughout the specification.
Throughout this specification, when a part is referred to as being "connected" to another part, it is not limited to a case where it is "directly connected" but also includes the case where it is "electrically connected" do.
Throughout this specification, when a member is "on " another member, it includes not only when the member is in contact with the other member, but also when there is another member between the two members.
Throughout this specification, when an element is referred to as "including " an element, it is understood that the element may include other elements as well, without departing from the other elements unless specifically stated otherwise.
As used herein, the terms "about," " substantially, "and the like are used herein to refer to or approximate the numerical value of manufacturing and material tolerances inherent in the stated sense, Accurate or absolute numbers are used to prevent unauthorized exploitation by unauthorized intruders of the mentioned disclosure. Also, throughout the present specification, the phrase " step "or" step "does not mean" step for.
Throughout this specification, the term "combination thereof" included in the expression of the machine form means one or more combinations or combinations selected from the group consisting of the constituents described in the expression of the machine form, And the like.
Throughout this specification, the description of "A and / or B" means "A, B, or A and B".
Hereinafter, a method of manufacturing the polishing pad of the present invention will be described in detail with reference to the embodiments and examples and the drawings. However, the present invention is not limited to these embodiments and examples and drawings.
1 is a flow chart of manufacturing a polishing pad according to one embodiment of the present application.
According to an aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: (S10) adding a sublimable material onto a polymer resin solution; Sublimating the sublimable material to form pores on the polymer resin solution (S20); And molding the polymer resin solution (S30).
First, a sublimable material is added to the polymer resin solution 100 (S10).
In one embodiment of the invention, the sublimable material may include, but is not limited to, naphthalene, camphor, iodine, or dry ice. The sublimable material is used as a foaming agent for forming the pores of the polishing pad of the present invention. The sublimable material is added and dispersed in a solid state in the polymer resin solution (100), and is then dispersed in the polymer resin solution It may be to form pores without changing the chemical properties of the polymer resin solution by forming the bubble 200.
Blowing agents used in the manufacture of conventional polishing pads include chemical blowing agents and physical blowing agents. The physical blowing agent has a low boiling point and uses the principle that the pores are formed and the pores are grown by the reaction heat generated when the polyol reacts with the isocyanate during the production of the polishing pad. In addition, water is generally used as a chemical foaming agent, and water is foamed by producing a carbon dioxide by causing a chemical exothermic reaction with an isocyanate group contained in the polymer resin during the production of polyurethane and molding the gas before rupture. However, when such a conventional physical foaming agent or chemical foaming agent is used to manufacture a polishing pad, the physical foaming agent or the chemical foaming agent remains on the produced polishing pad, and scratches are often generated on the wafer to be polished. However, when the sublimable material of the present invention is used to form pores, substantially sublimable substances do not remain on the polishing pad, so that the polishing rate and uniformity can be improved. In addition, when a chemical foaming agent is used, there is a problem in that mechanical properties of the polishing pad are reduced in the process of forming pores in the polishing pad due to the generation of carbon dioxide gas. However, in the manufacturing method of the polishing pad according to one embodiment of the present invention The excellent mechanical properties can be maintained. Particularly, in recent years, attempts have been made to add additives to the slurry finely to control various conditions at the time of polishing or the state of the polishing pad, and there is an increasing demand for the pad to have no additive substance that can affect the polishing pad. Accordingly, a method capable of forming only pure pores without adding any additive material into the matrix of the polishing pad is attracting attention.
In one embodiment of the present invention, the sublimable material may include, but is not limited to, a powder form. The sublimable material may be a powder having a size of about 1 μm to about 100 μm, but is not limited thereto. For example, the sublimable material may include, but is not limited to, naphthalene, camphor, iodine, or dry ice. The sublimable material may be, but is not limited to, being homogeneously distributed on the polymeric resin by agitation following the step of being added onto the polymeric resin in powder form to form even pores.
In one embodiment of the invention, the polymeric resin is a polyisocyanate and is used to make a urethane foam that constitutes a matrix of a polishing pad. The preparation of urethanes may be prepared from the reaction of an isocyanate-terminated urethane prepolymer from a prepolymer polyol with an isocyanate. The polyol may be a polypropylene ether glycol, a copolymer thereof, or a mixture thereof, but is not limited thereto. Specifically, the reaction can be formed by reacting a urethane prepolymer, such as an isocyanate, a di-isocyanate, and a tri-isocyanate prepolymer, with a prepolymer containing an isocyanate reactive moiety. Suitable isocyanate reactive moieties may include, but are not limited to, amines and polyols.
The component of the polyisocyanate contained in the polyurethane is not particularly limited as long as it is an organic compound having two or more isocyanate groups in one molecule. Examples thereof include aliphatic, alicyclic and aromatic polyisocyanates or their modifications. Specific examples of the aliphatic and alicyclic polyisocyanates include hexamethylene diisocyanate and isophorone diisocyanate. Examples of the aromatic polyisocyanate include tolylene diisocyanate, diphenylmethane diisocyanate, polyphenylene polymethylene polyisocyanate, and the like, and also modified products such as a carbodiimide-modified product and a prepolymer.
In one embodiment of the present invention, the polishing pad of the present invention can be produced by using the above-described polymer resins in the manufacturing process, and a synthetic method well-known in the art can be used without any limitations. For example, when the pad body is made of a polyurethane compound, a pre-polymer method or a one shot method may be used. In the case of the prepolymer method, a urethane prepolymer is formed by reacting a polyol component and an isocyanate component, and then the urethane prepolymer, the diamine or the diol, the foaming agent and the catalyst are mixed and cured to prepare a polyurethane resin . According to the one-shot method, a polyurethane resin can be formed by mixing a polyol component, an isocyanate component, a diamine or a diol, a blowing agent, a catalyst, and the like, followed by curing.
Subsequently, the sublimable material is sublimated to form pores on the polymer resin solution (S20).
In one embodiment of the invention, sublimation of the sublimable material may include, but is not limited to, molding the polymer resin solution at about 0 캜 to about 150 캜. The sublimable material may be a sublimable material at room temperature, but is not limited thereto. For example, the sublimable material may include, but is not limited to, naphthalene, camphor, iodine, or dry ice.
The sublimable material is added to the polymer resin solution and then uniformly dispersed by stirring. Submerging the sublimable material from the polymer resin solution by molding at a temperature effective for sublimation of the sublimable material, But it is not limited thereto.
When the temperature or pressure is changed as a reaction condition for phase-changing the sublimable material, the porosity and pore size can be controlled. The generated pores may mainly include a closed cell, but may include an open cell. 2 is a schematic view showing that pores are formed in the polymer resin solution by the sublimation material. When preparing a polishing pad, the polymer resin solution is heated to about 60 ° C to about 70 ° C, and when the curing agent is added to cure the polymer resin solution, the curing agent is heated to about 125 ° C. When the polymer resin solution and the curing agent are mixed and stirred, the temperature of the mixture is about 50 ° C to about 70 ° C. The sublimation of the sublimable material is promoted due to heat generated in the curing process of the polymer resin solution have. The sublimable material can be used without limitation as long as sublimation occurs at room temperature. However, due to the heat generated in the manufacturing process of the polishing pad, sublimation can be promoted and the gas can be formed in a short time to form pores in the urethane resin solution.
The sublimation of the sublimable material may be performed simultaneously with or subsequent to the molding of the polymer resin solution, or may be performed after a separate process. The sublimation of the sublimable material can be performed in an arbitrary atmosphere at room temperature, but it may preferably be performed in an inert gas atmosphere such as nitrogen in order to avoid adverse effects such as deterioration of the polymer resin solution accompanying heating , But is not limited thereto.
In addition to the polymer resin and the sublimation substance, additives or auxiliary agents may be mixed with the polymer resin, for example, a polyisocyanate component depending on the application. The additives and the adjuvants other than the above are not particularly limited and are used for the purpose of improving physical properties and operability in ordinary resins and may be any ones as long as they do not have a significant adverse effect on the urethanization reaction.
Subsequently, the polymer resin solution is molded (S30).
In one embodiment of the invention, the molding may be performed by the addition of a curing agent. The conditions under which the molding is performed may be performed at a temperature of about 25 캜 to about 100 캜 of the polymer resin, at a temperature of the curing agent of about 100 캜 to about 150 캜, and may be performed by adding a silicone type coagulant, a crosslinking agent, and / But is not limited thereto.
The conditions under which the molding is carried out may be, for example, from about 25 캜 to about 100 캜, from about 25 캜 to about 90 캜, from about 25 캜 to about 80 캜, from about 25 캜 to about 70 캜, To about 60 占 폚, from about 25 占 폚 to about 50 占 폚, from about 30 占 폚 to about 100 占 폚, from about 35 占 폚 to about 100 占 폚, or from about 40 占 폚 to about 100 占 폚.
In one embodiment of the present invention, the hardening agent may be added in the step (S30) of molding the polymer resin solution, but the present invention is not limited thereto.
In one embodiment of the invention, the curing agent may be, but is not limited to, a compound or mixture of compounds used to cure or harden the urethane prepolymer. The curing agent reacts with the isocyanate groups to join the chains of the prepolymer together to form the polyurethane. Typical curing agents typically used are 4,4'-methylene-bis (2-chloroaniline) methylene, abbreviated as MBCA and sometimes referred to as MOCA (R); 4,4'-methylene-bis- (3-chloro-2,6-diethylaniline), abbreviated as MCDEA; Dimethylthiotoluenediamine, trimethylene glycol di-p-aminobenzoate; Polytetramethylene oxide di-p-aminobenzoate; Polytetramethylene oxide mono-p-aminobenzoate; Polypropylene oxide di-p-aminobenzoate; Polypropylene oxide mono-p-aminobenzoate; 1,2-bis (2-aminophenylthio) ethane; 4,4'-methylene-bis-aniline; Diethyltoluenediamine; 5-tert-butyl-2,4-toluenediamine; 3-tert-butyl-2,6-toluenediamine; 5-tert-amyl-2,4-toluenediamine; 3-tert-amyl-2,6-toluenediamine, or chlorotoluenediamine, but are not limited thereto.
In the step of forming the polymer resin solution (S30), the temperature of the curing agent may be about 100 ° C to about 150 ° C, but is not limited thereto. For example, the temperature may be from about 100 캜 to about 150 캜, from about 110 캜 to about 150 캜, from about 120 캜 to about 150 캜, from about 100 캜 to about 140 캜, or from about 100 캜 to about 130 캜 But is not limited thereto.
Hereinafter, the present invention will be described in more detail with reference to the following examples. However, the following examples are for illustrative purposes only and are not intended to limit the scope of the present invention.
A prepolymer was prepared and heated to 50 캜 to 80 캜, and a camphor having a powder particle size of 10 탆 to 100 탆 was injected into the prepolymer. The prepolymer and the camphor compound were placed in an oven at 125 ° C and heated, and 4,4'-methylene-bis (2-chloroaniline) methylene melted as a curing agent was injected, followed by stirring for 30 seconds. The camphor is sublimated in the stirring step to form pores inside the urethane resin. The agitated resin was applied to a plate or a certain mold with little step difference. At this time, the plate or the mold was heated in an oven at 100 ° C. for 1 hour or more, and the resin or the resin was applied to the plate or the mold and cured for at least 24 hours in an oven at 100 ° C. After curing, the urethane was removed from the mold and cut to a thickness of 1 mm to 3 mm.
In order to compare the polishing performance of the conventional polishing pad according to the first embodiment of the present invention and the conventional polishing pad, a polishing pad made of a polyurethane matrix filled with spherical pores was used as a conventional polishing pad, . The composition of the surface layer of the silicon wafer to be polished is silicon dioxide. The wafer was polished on a commercially available wafer polishing machine (AP-300) using a commercially available silica-based polishing slurry and a bonded diamond pad conditioner supplied as part of a polishing machine. The pads were conditioned for 15 minutes before each wafer was polished. The conditioning action was to form a series of irregularly arranged microcracks or grooves on the surface of the pad resulting in a series of grooves with a pitch of 0.085 inches and a depth of 0.040 inches on the pad. The polishing conditions used were a pressure of 9 psi, a pressure plate speed of 95 rpm, a carrier speed of 90 rpm, and a polishing time of 1 minute. By maintaining the above conditions constant for the present example and all the other examples, it is possible to directly compare the performance of the polishing pad according to the present invention and the conventional polishing pad.
In the case of a conventional polishing pad, when the polishing was carried out according to the above polishing conditions, a material removal rate of 1,500 Å / min or less was observed with respect to the test wafer.
On the other hand, in the case of using the polishing pad according to the manufacturing method of the present invention, a high and uniform material removal rate of less than 3,000 A / min was observed, and the unevenness of the material removal rate across the entire wafer was very low.
It will be understood by those of ordinary skill in the art that the foregoing description of the embodiments is for illustrative purposes and that those skilled in the art can easily modify the invention without departing from the spirit or essential characteristics thereof. It is therefore to be understood that the above-described embodiments are illustrative in all aspects and not restrictive. For example, each component described as a single entity may be distributed and implemented, and components described as being distributed may also be implemented in a combined form.
The scope of the present invention is defined by the appended claims rather than the detailed description, and all changes or modifications derived from the meaning and scope of the claims and their equivalents should be construed as being included within the scope of the present invention.
100: Polymer resin solution
110: Groundwork
Claims (7)
Sublimating the sublimable material to form pores on the polymer resin solution; And
Molding the polymer resin solution
/ RTI >
A method of manufacturing a polishing pad.
Wherein the sublimable material comprises naphthalene, camphor, iodine, or dry ice.
Wherein the sublimable material comprises a powder form.
Wherein the step of sublimating the sublimable material comprises molding the polymer resin solution at a temperature of 0 ° C to 150 ° C.
Wherein the forming is performed by adding a hardener.
The curing agent may be at least one selected from the group consisting of 4,4'-methylene-bis (2-chloroaniline) methylene, 4,4'-methylene-bis- (3-chloro-2,6-diethylaniline), dimethylthiotoluenediamine, Di-p-aminobenzoate, polytetramethylene oxide di-p-aminobenzoate, polytetramethylene oxide mono-p-aminobenzoate, polypropylene oxide di-p- aminobenzoate, polypropylene oxide Aminophenylthio) ethane, 4,4'-methylene-bis-aniline, diethyltoluenediamine, 5-tert-butyl- , 3-tert-butyl-2,6-toluenediamine, 5-tert-amyl-2,4-toluenediamine, 3-tert-amyl-2,6-toluenediamine or chlorotoluenediamine. ≪ / RTI >
Wherein the sublimable material does not remain on the polishing pad.
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| EP1466699A1 (en) * | 2003-04-09 | 2004-10-13 | JSR Corporation | Abrasive pad, method and metal mold for manufacturing the same, and semiconductor wafer polishing method |
| JP5142866B2 (en) * | 2008-07-16 | 2013-02-13 | 富士紡ホールディングス株式会社 | Polishing pad |
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