KR20160134541A - Methods for increasing the rate of electrochemical deposition - Google Patents

Abstract

A method for electrochemically processing a micro-feature workpiece comprises: a step of bringing a first surface of the micro-feature workpiece into contact with a plating electrolyte in a plating chamber, wherein the plating electrolyte includes at least one metal ion; a step of moving the plating electrolyte from a first plating electrolyte inlet at a first end of the workpiece to a second plating electrolyte outlet at a second end of the workpiece across a center point of the workpiece; and a step of electrochemically depositing at least one metal ion onto the first surface of the workpiece. Another method for electrochemically processing a micro-feature workpiece comprises: a step of bringing the first surface of the micro-feature workpiece into contact with a plating electrolyte having at least one metal ion; a step of using a heating method to heat the second surface of the workpiece; and a step of electrochemically depositing at least one metal ion onto the first surface of the workpiece.

Description

[0001] METHODS FOR INCREASING THE RATE OF ELECTROCHEMICAL DEPOSITION [0002]

In electrochemical deposition, the electroplating rate is controlled by a number of factors including, for example, the concentration and current of the metal ions to be plated at the location where the plating will occur. The concentration of metal ions to be plated is a gating factor independent of the applied current.

The limiting current density is the maximum current at which the desired reaction will occur before other undesirable effects occur. Undesirable effects from exceeding the limiting current density include, but are not limited to, the generation of gases as a result of dendritic deposits, nodule formation, and alternative reactions.

Thus, in order to increase the electroplating rate, there is a need to increase the availability of reactive species at the location where plating will occur. Embodiments of the present disclosure are directed to meeting these and other needs.

This summary is provided to introduce in an abbreviated form the abstract of the concepts further illustrated in the following detailed description. This summary is not intended to identify key features of the claimed subject matter, nor is this summary intended to be used to aid in determining the scope of the claimed subject matter.

According to one embodiment of the present disclosure, a method is provided for electrochemically processing a microfeature workpiece, the workpiece having a first surface and a second surface, and a first end and a second end. The method includes contacting a first surface of a microfeature workpiece with a plating electrolyte in a plating chamber, wherein the plating electrolyte comprises at least one metal ion; Flowing a plating electrolyte from a first plating electrolyte inlet at a first end of the workpiece to a second plating electrolyte outlet at a second end of the workpiece across a center point of the workpiece; And electrochemically depositing at least one metal ion on the first surface of the workpiece.

According to another embodiment of the present disclosure, a method is provided for electrochemically processing a microfeature workpiece, the workpiece having first and second opposing surfaces. The method includes contacting a first surface of a microfeature workpiece with a plating electrolyte having at least one metal ion; Heating the second surface of the workpiece using a heating method; And electrochemically depositing at least one metal ion on the first surface of the workpiece.

According to any of the methods described herein, the plating electrolyte may be a catholyte, and the plating electrolyte chamber may be a catholyte chamber.

According to any of the methods described herein, the electrolyte can be pumped from the electrolyte chamber to the first plating electrolyte inlet.

According to any of the methods described herein, the electrolyte chamber may include a plenum zone to be pressurized.

According to any of the methods described herein, the electrolyte may have a flow rate of greater than 50 mm / sec at the inlet.

According to any of the methods described herein, the electrolyte may have a flow rate of greater than 50 mm / sec at the outlet.

According to any of the methods described herein, the electrolyte may have a substantially unidirectional flow pattern from the first end of the workpiece to the second end of the workpiece.

According to any of the methods described herein, the electrolyte may impinge on the first surface of the workpiece at an angle in the range of from about 5 to about 10.

According to any one of the methods described herein, the method includes the steps of providing a flow pattern that is substantially parallel to the flow pattern of the plating electrolyte from the first inlet to the first outlet, one Or more than the second plating electrolyte outlets in the plating bath.

According to any of the methods described herein, the method may further include heating the second surface of the workpiece using a heating method.

According to any of the methods described herein, the heating may be in the range of 90 占 폚 to 200 占 폚.

According to any of the methods described herein, the heating method may be selected from the group consisting of direct conductive heating, convective heating, ionic heating, and irradiation.

According to any of the methods described herein, the direct conductive heating may be selected from the group consisting of direct contact with the heated pad and direct contact with the heated vacuum chuck.

According to any of the methods described herein, the convective heating may comprise a flow of hot air across the second surface of the workpiece.

Many of the above-described aspects and attendant advantages of the present disclosure will become more readily appreciated as the same becomes better understood by reference to the following detailed description when taken in conjunction with the accompanying drawings.
BRIEF DESCRIPTION OF THE DRAWINGS Figures 1A and 1B are schematic diagrams illustrating internal views of a workpiece in a plating cell having electrolyte flow patterns according to embodiments of the present disclosure.
1C is a close-up schematic of the features on the workpiece of FIGS. 1A and 1B, showing the electrolyte flow patterns in the features. FIG.
2 is a schematic diagram showing an internal view of a workpiece in a plating cell having electrolyte flow patterns according to another embodiment of the present disclosure;
3 is a schematic diagram showing an internal view of a workpiece in a plating cell according to another embodiment of the present disclosure, having electrolyte flow patterns;
4A is a schematic diagram illustrating an internal view of a workpiece in a plating cell according to another embodiment of the present disclosure having backside heating and electrolyte flow patterns.
Fig. 4B is a close-up schematic of the features on the workpiece of Figs. 4A and 1B, showing temperature gradients at the features. Fig.
5 is a graphical representation of data illustrating the RDE (Rotating Disk Electrode) limiting current for a copper electrolyte bath at a varying temperature.
Figure 6 is a graphical representation of the data showing the RDE limit current for the copper electrolyte bath at varying temperatures and agitation speeds.
7 is a graphical representation of the data showing the RDE limit current for the copper electrolyte bath at varying agitation speeds.

Embodiments of the present disclosure are directed to systems and methods for increasing the critical current density (and thus the maximum plating rate) on microelectronic workpieces by increasing mass transport to the reaction surface . Factors affecting the deposition of the metal in the features include the current density, the concentration of metal ions in the bath, the size of the recess opening, the depth of the recess to be plated, the types and concentrations of bath additives, Stirring, and temperature of the bath. These factors are described in more detail below. The methods described herein relate to process parameters for improving the agitation and plating interface temperature.

Embodiments of the present disclosure are directed to workpieces, such as semiconductor wafers, methods for processing devices, or processing assemblies for processing workpieces, and methods for processing the same. The terms "workpiece", "wafer", and "semiconductor wafer" refer to semiconductor wafers and other substrates or wafers, glass, mask and optical or memory media, MEMS substrates, Mechanical, or any other workpiece having micro-electro-mechanical devices.

The methods described herein are for use in metal or metal alloy deposition in features of workpieces, including trenches and vias. In one embodiment of the present disclosure, the processes may be performed in the same manner as the features with feature-critical dimensions of 1 to 2 microns in width, for example, plated thicknesses of 1 to 2 microns in a masking film having a thickness of 5 to 10 microns, Can be used in small features. In other embodiments, the processes can be used, for example, in large features having a depth of up to 250 microns. In other embodiments, the processes may be used in features having an aspect ratio in the range of 1 to 20. However, the processes described herein are applicable for any feature size. The dimension sizes discussed herein may be post-etching feature dimensions at the top opening of the feature.

The processes described herein can be applied for various types of copper, cobalt, nickel, gold, silver, manganese, tin, aluminum, and alloy deposition in, for example, Damascene or packaging applications. The processes described herein may also be modified for metal or metal alloy deposition at high aspect ratio features, for example vias in through silicon via (TSV) features.

Descriptive terms such as "micro-feature workpiece" and "workpiece ", as used herein, may include all structures and layers previously deposited and formed at a given point in processing, Or is not limited to only the structures and layers shown in the Figures.

Although generally described herein as metal deposition, the term "metal" also refers to metal alloys and co-deposited metals. Such metals, metal alloys, and co-deposited metals may be used to form the seed layers, or to fill the features completely or partially. Exemplary co-deposited metals and copper alloys may include, but are not limited to, copper manganese and copper aluminum. As non-limiting examples of co-deposited metals and metal alloys, alloy composition ratios may range from about 0.5% to about 6% of secondary alloy metals.

Referring to Figs. 1A-1C, a workpiece 102 in an exemplary plating process according to embodiments of the present disclosure is provided. Referring to FIG. 1A, a workpiece 102 includes a substrate 110, a selective barrier layer 112, and a seed layer 114. In the electrochemical deposition chamber, the voltage applies a cathodic potential on the workpiece 102 with respect to the anode 104.

Conventional fabrication of metal interconnects may include suitable deposition of the barrier layer 112 on the dielectric material of the substrate 110 to prevent diffusion of copper into the dielectric material. Suitable barrier layers include, for example, titanium (Ti), tantalum (Ta), titanium nitride (TiN), tantalum nitride (TaN), manganese (Mn), manganese nitride (MnN) and the like. Barrier layers are typically used to isolate copper or copper alloys from dielectric materials.

A seed layer 114 may be deposited on the barrier layer 112. The seed layer may be deposited using a PVD deposition technique. As another non-limiting example, the seed layer may be a copper alloy seed layer such as copper manganese, copper cobalt, or copper nickel alloys. The seed layer may also be formed by using other deposition techniques such as CVD or ALD.

After the seed layer 114 is deposited, ECD plating may be performed in the electrochemical deposition chamber. Referring to FIG. 1C, features 124 on the first surface 114 of the workpiece 102 may be plated, for example, using acidic plating chemistries or alkaline plating chemistries. The ECD charge is typically a bottom-up gap charge, a super-fill, a conformal, or a super-conformal plating, all of which are substantially non- It has the purpose of extreme charging.

Electroplating occurs when metal ions in a solution couple with electrons at the plated layer interface. Initially, metal ions are deposited on the seed layer, after which deposits, such as additional molecules, are plated on top of the previously deposited metal. As the metal ions are deposited, the concentration of metal ions at the plating interface will be exhausted. The concentration of metal ions in the boundary layer is refreshed as metal ions diffuse from the bulk plating electrolyte to the plating interface. The diffusion is driven partially by the concentration gradient. Thus, by maintaining a high concentration of metal ions in the bulk plating electrolyte, metal ions will more readily diffuse into the plating interface. However, there are physical limitations to the amount of metal ions in the electrolyte. In addition, diffusion can be influenced by the aspect ratio and / or depth of the features.

Certain additives (e.g., inhibitors, accelerators, and levelers) can help to facilitate the transfer of ionic species to the reaction surface. The additives are broadly described as accelerators, inhibitors, and levelers. (E.g., to limit the formation of voids and to determine particle size and film finish) during electroplating processes, but they also have an effect on limiting current density I can go crazy.

The limiting current density is linearly increased with an increase in the concentration of metal ions, an increase in the diffusion constant, or a decrease in the diffusion boundary layer. Methods for increasing the critical current density, in accordance with embodiments of the present disclosure, primarily reduce the diffusion boundary layer, since the concentration and diffusion constants of the metal ions in the solution can not be extensively manipulated in the plating electrolyte. The steady-state diffusion boundary layer is defined by the hydrodynamic conditions on the workpiece surface and can be reduced by increasing the electrolyte flow through heat and / or mass transfer.

According to one embodiment of the present disclosure, agitation is used to increase the bulk transport of metal ions to the reaction interface, beyond the mass transport achieved by diffusion. Stirring can reduce the boundary layer through which metal ions diffuse, depending on the particular workpiece geometry and type of agitation. For example, stirring of the plating electrolyte when depositing a metal on a non-patterned workpiece may be effective, such as reducing the boundary layer. Conversely, in the case of depositing metal on features with high aspect ratios and / or small geometric shapes, diffusion can be a more efficient transport mechanism than agitation. The feature size defines the restriction that products and reactants pass through to be exchanged from the reaction interface to the bulk plating electrolyte.

Previously designed systems typically use a paddle stirrer in the immediate vicinity of the workpiece, which has approximately the same diameter as the workpiece. The paddles are designed to produce displacement of the plating electrolyte to move across the workpiece surface. The paddles can be attached to a movement mechanism to provide short, rapid strokes back and forth. The speed of the paddles can range from about 50 to about 500 mm / sec, with an acceleration of up to 10 times the speed, or 50 to 5000 mm / sec ^ 2.

Fast back and forth strokes prevent directional flow of the electrolyte across the surface of the workpiece. Thus, the paddles tend to work closer to the "mixer" than to the means for imparting speed to the fluid. Mixing helps to promote certain advantages in the electrolyte, such as uniformity in film composition, but mixing has a limited benefit in promoting an increase in the limiting current.

In the case of a paddle system, the inventors have found that stirring in the feature is significantly less than stirring achieved near the paddle. In addition, a constant reversal of the paddles prevented a true unidirectional bulk flow rate from being achieved in the plating bath.

According to one embodiment of the present disclosure, and referring to FIGS. 1A and 1B, a plating electrolyte 106 may be provided with one or more electrolyte inlets (not shown) with a substantially unidirectional velocity profile, as illustrated in FIG. 118 to one or more of the electrolyte outlets 120. The velocity profile is achieved by a high velocity, substantially unidirectional electrolyte flow pattern from one end of the workpiece to the other end of the workpiece. As can be seen in the illustrated embodiment of FIG. 1B, the flow patterns between adjacent inlets and outlets are substantially parallel.

At the electrolyte inlets 118, an electrolyte flow 122 is introduced into the plating chamber immediately adjacent to the leading edge of the workpiece 102. The inlets 118 may have a height approximately equal to the width of the workpiece to be plated and may have a height in the range of, for example, 0.5 mm to 5 mm, or the width of the chord of the workpiece . The inlets 118 may have a rectangular or other cross-sectional shape and may also be formed in a manner that follows the contour of the leading edge of the workpiece 102 into which the flow is introduced.

At the electrolyte outlets 120, an electrolyte flow 122 is introduced into the plating chamber immediately adjacent to the edge of the workpiece 102. The outlets 120 may have a height approximately equal to the width of the workpiece to be plated and may have a height in the range of, for example, 0.5 mm to 5 mm, or the width of the cord of the workpiece. The outlets 120 may have a rectangular or other cross sectional shape and may also be formed in a manner that follows the contour of the edge of the workpiece 102 through which the flow 122 flows.

1A, the plating cell comprises a permeable membrane 116, such as an ion permeable membrane, to divide the plating electrolyte into anolyte 108 and catholyte 106. In the illustrated embodiment, . Thus, the catholyte 106 flows through the inlet 118 and the outlet 120 through the chamber. The ion permeable membrane 116 is used to separate the anolyte 108 and the catholyte 106 such that the anolyte 108 has chemical characteristics and properties different from the catholyte 106.

In other embodiments, the plating cell does not include a membrane for dividing the electrolyte into catholyte and anolyte cells (see, e.g., FIG. 3). In the illustrated embodiment of FIG. 3, electrolyte 306 flows through the chambers through inlets 318 and outlets 320.

Embodiments of the present disclosure are directed to a means for creating a true velocity profile in the flow of electrolyte 106 on the surface of a workpiece 102 to increase mass transport in features of the workpiece. Referring to FIG. 1C, a close-up view of the features 124 on the workpiece illustrates mixing at the features 124 as a result of the velocity profile of the electrolyte 106 in FIGS. 1A and 1B. In contrast to previously designed paddle agitation, the unidirectional fluid flow described herein provides an advantageous effect of improved mixing in the features.

Although the paddle-type agitator may be effective in mixing as a result of eddies generated at the apex of the paddle pins, the paddle-type agitator does not produce fluid motion in the bulk fluid, equivalent to the motion of the agitator . The need for a gap between the surface to be agitated and the agitator, and the reversal of the agitator direction, which causes inertia of the fluid, a "leakage path ", does not allow the fluid to accelerate, Do not allow it. Conversely, injecting the electrolyte into the constrained space where the plated surface forms a constraining boundary of the fluid path can be configured in such a way that the fluid flow is substantially parallel to the wafer surface, A constant velocity is maintained across the surface. The boundary layer, in which the metal ions are diffused, is then a function of velocity rather than a function of the agitator motion profile. The bulk of the liquid in the confined space is at a velocity and is substantially uniform across the surface.

According to one embodiment of the present disclosure, the velocity of the electrolyte across the surface of the workpiece at the first end of the workpiece is greater than 50 mm / sec, greater than 100 mm / sec, greater than 150 mm / sec, sec. < / RTI > Practical speeds of up to 800 mm / sec have been achieved. Thus, in one embodiment of the present disclosure, the velocity of the electrolyte across the surface of the workpiece at the first end of the workpiece may be in the range of 100 to 800 mm / sec.

The speed of the electrolyte across the surface of the workpiece at the second end of the workpiece may be in the range of greater than 50 mm / sec, greater than 100 mm / sec, greater than 150 mm / sec, greater than 200 mm / sec, Or in the range of 100 to 800 mm / sec. Any reduction in speed is due to flow losses at the workpiece periphery.

Systems for achieving such flow rates may include pumps, pressurization, or vacuum suction. In one embodiment of the present disclosure, the system includes a pump to pump the electrolyte from the electrolyte reservoir through the inlet 118 to the plating chamber and back through the outlet 120 to the electrolyte reservoir do. In another embodiment of the present disclosure, the system includes a pump for pumping electrolyte from the plenum region.

In addition to the improved mixing effects in the features, the electrolyte can be cycled at a faster rate, thereby maintaining a more constant metal ion concentration. For example, in a typical system, the catholyte tank is circulated at a rate of about 4 liters / minute and about one reactor volume is exchanged about every minute. In the case of an exemplary high velocity stream according to an embodiment of the present disclosure, the catholyte tank can be cycled at a rate of about 18 to 72 liters / minute, thereby replacing the reactor volume faster than previously designed systems can do.

As can be seen in the illustrated embodiment of FIG. 2, an exemplary system according to another embodiment of the present disclosure includes an electrolyte inlet 218 for directing the electrolyte across the surface of the workpiece < RTI ID = 0.0 & And may include one or more nozzles 224.

In addition to the directionality across the workpiece, the fluid flow of the electrolyte can be at the impingement angle to the surface of the workpiece (see FIG. 2). In one non-limiting example, the impingement angle may range from about 5 to about 10.

In addition to the enhanced mixing, increasing the temperature in the bulk plating electrolyte may have the beneficial effect of helping to drive the diffusion to the plating surface interface. However, bass heating can have an adverse effect on the additives in the electrolyte. Thus, the electrolyte heating parameters are generally within controlled limits.

4A and 4B, another embodiment of the present disclosure is provided. According to this embodiment, the workpiece 402 is subjected to backside heating on the second surface 410 of the workpiece. The backside heating produces a temperature difference between the plating surface T1 (e.g., 65 占 폚) at the bottom of the workpiece features 424 and the field T2 (e.g., 35 占 폚).

As described above, according to one embodiment of the present disclosure, the backside heating of the workpiece can be used to further increase the electroplating rate. Backside heating may be used in lieu of, or in addition to, the methods of electrolyte flow described above. According to embodiments of the present disclosure, the back surface of the workpiece may be heated to increase the bath temperature at the feature, rather than the entire bath temperature.

During backside heating, the slope of heating in the fluid at the feature is achieved, but the bulk of the fluid is maintained at a lower temperature. Thus, an increase in temperature at the plating surface interface can help drive the diffusion of metal ions into the interface, without adversely increasing the temperature of the bulk fluid.

In one embodiment of the present disclosure, the temperature of the fluid at the bottom of the recess in the feature may be at least about 20 DEG C warmer than the temperature of the bulk fluid outside the feature. In another embodiment of the present disclosure, the temperature of the fluid at the bottom of the recess in the feature may be at least about 30 [deg.] C warmer than the temperature of the bulk fluid outside the feature. In one embodiment of the present disclosure, the temperature of the fluid at the bottom of the recess in the feature may be in the range of about 60 캜 to about 90 캜. In one embodiment of the present disclosure, the temperature of the bulk fluid outside the features may be in the range of about 35 占 폚 to about 50 占 폚.

The heating method for the backside of the workpiece may be direct conductive heating, convective heating, ionic heating, or irradiation. The direct conductive heating may be, for example, direct contact with the heated pad, or direct contact with the heated vacuum chuck. Convective heating may include, for example, flow of hot air across the second surface of the workpiece.

In addition to backside heating, cooling can be applied to bulk electrolytes to prevent bath degradation.

Example 1:

RDE Limit Current vs. Temperature

The backside heating concept was tested by attaching a patterned silicon workpiece to the heat-sink. RDE (Rotating Disk Electrode) was immersed in a copper plating bath having approximately 63 g / l (1 M) Cu in solution from copper sulfate. A fluid at 70 [deg.] C was circulated through the heat sink and the patterned workpiece was immersed in the plating bath. The various samples were plated at different currents, both in ambient and elevated sample temperatures. The results in Fig. 5 show the increase in the critical current density as the temperature is increased.

At ambient temperature, when plated inside photoresist vias of approximately 75 x 120 microns (diameter versus depth of photoresist), initiation of nodule formation occurred at a plating rate of approximately 3 to 3.5 microns / minute.

Example 2:

RDE Limit Current versus Rotational Speed and Temperature

Figure 6 shows data representing the results of an RDE (Rotating Disk Electrode) experiment in which both temperature and rotational speed were changed. The tests were run at rotational speeds of 0 RPM, 5 RPM, 25 RPM, and 100 RPM. The results showed slight increases to the limiting current density, from increasing the rotational speed to low RPM values of 5 and 25. The results showed a step-function increase at higher rotational speeds of 100 RPM.

Example 3

RDE limit current vs. rotational speed

Figure 7 shows data expressing the effect of relative fluid velocity in more detail. The current "state of the art" parameters for the paddle operate at an acceleration rate of 8000 mm / sec ^ 2 and a speed of 200 mm / sec. Rotating Disk Electrode (RDE) coupons were run with a substantially linear jet stream and the electroplating rate was adjusted to 3 to 3.5 microns / minute before nodule formation was observed indicating that the limiting current was exceeded Lt; RTI ID = 0.0 > 10-15 microns / min. ≪ / RTI > The increase was achieved by scanning a velocity jet across the surface of the coupon at a flow rate of ~ 183 mm / sec. The jet stream is close to the paddle velocity range, but achieves results that are better than the paddle velocity, since the jet stream appears to confer a true unidirectional bulk flow rate to the electroplating bath. The true velocity profile on the wafer surface allows even increased mass transport into limiting features, thereby significantly increasing the plating rate.

Although illustrative embodiments have been illustrated and described, various changes may be made in the exemplary embodiments without departing from the spirit and scope of the disclosure.

Claims (15)

CLAIMS 1. A method for electrochemically processing a microfeature workpiece,
The workpiece having a first surface and a second surface and a first end and a second end,
The method comprises:
Contacting a first surface of the microfeature workpiece with a plating electrolyte in a plating chamber, the plating electrolyte comprising at least one metal ion;
From a first plating electrolyte inlet at a first end of the workpiece to a second plating electrolyte outlet at a second end of the workpiece across a center point of the workpiece, ; And
Electrochemically depositing the at least one metal ion on a first surface of the workpiece
/ RTI >
A method for electrochemically processing a microfeature workpiece. The method according to claim 1,
Wherein the plating electrolyte is a catholyte and the plating electrolyte chamber is a catholyte chamber,
A method for electrochemically processing a microfeature workpiece. The method according to claim 1,
Wherein the electrolyte is pumped from the electrolyte chamber to the first plating electrolyte inlet,
A method for electrochemically processing a microfeature workpiece. The method of claim 3,
Wherein the electrolyte chamber comprises a plenum zone to be pressurized,
A method for electrochemically processing a microfeature workpiece. The method according to claim 1,
Said electrolyte having, at said inlet, a flow rate of greater than 50 mm / sec,
A method for electrochemically processing a microfeature workpiece. The method according to claim 1,
Said electrolyte having, at said outlet, a flow rate greater than 50 mm / sec,
A method for electrochemically processing a microfeature workpiece. The method according to claim 1,
Wherein the electrolyte has a substantially unidirectional flow pattern from a first end of the workpiece to a second end of the workpiece,
A method for electrochemically processing a microfeature workpiece. The method according to claim 1,
Wherein the electrolyte is applied to the first surface of the workpiece at an angle in the range of about 5 [deg.] To about 10 [
A method for electrochemically processing a microfeature workpiece. The method according to claim 1,
The method comprises:
From a plurality of second plating electrolyte inlets to one or more second plating electrolyte outlets in a flow pattern substantially parallel to the flow pattern of the plating electrolyte from the first inlet to the first outlet, Further comprising the step of:
A method for electrochemically processing a microfeature workpiece. The method according to claim 1,
Heating the second surface of the workpiece using a heating method,
A method for electrochemically processing a microfeature workpiece. A method for electrochemically processing a microfeature workpiece,
The workpiece having first and second opposing surfaces,
The method comprises:
Contacting a first surface of the microfeature workpiece with a plating electrolyte having at least one metal ion;
Heating the second surface of the workpiece using a heating method; And
Electrochemically depositing at least one metal ion on the first surface of the workpiece
/ RTI >
A method for electrochemically processing a microfeature workpiece. The method according to claim 10 or 11,
The heating is carried out at a temperature in the range of < RTI ID = 0.0 > 90 C &
A method for electrochemically processing a microfeature workpiece. The method according to claim 10 or 11,
Wherein the heating method is selected from the group consisting of direct conductive heating, convective heating, ionic heating, and irradiation.
A method for electrochemically processing a microfeature workpiece. 14. The method of claim 13,
Wherein the direct conductive heating is selected from the group consisting of direct contact with the heated pad and direct contact with the heated vacuum chuck,
A method for electrochemically processing a microfeature workpiece. 14. The method of claim 13,
Wherein the convective heating comprises a flow of hot air across the second surface of the workpiece,
A method for electrochemically processing a microfeature workpiece.

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