KR20160121923A - Apparatus for depositing composite layer, method for depositing the same and apparatus for depositing hybrid passivation film - Google Patents

Abstract

The present invention relates to an apparatus to deposit a composite layer, a method of depositing a composite layer, and an apparatus to deposit a hybrid encapsulation film and, more specifically, relates to an apparatus to deposit a composite layer which is able to deposit a composite layer in a single chamber, a method of depositing a composite layer, and an apparatus to deposit a hybrid encapsulation film. According to an embodiment of the present invention, the apparatus to deposit the composite layer comprises: a substrate support supporting a substrate; a depositing module including a linear atomic layer depositing source and a linear chemical vapor depositing source disposed in parallel in a first axis direction across the substrate, and disposed to correspond to the substrate; and a driving unit connected to the substrate support or the depositing module to allow the substrate support or the depositing module to reciprocate in a second axis direction crossing the first axis direction. The linear atomic layer depositing source includes a first source material nozzle spraying a first source material and a first reacting material nozzle spraying a first reacting material, and the first source material nozzle and the first reacting material nozzle disposed in parallel in the first axis direction. The linear chemical vapor depositing source includes a second source material nozzle spraying a second source material and a second reacting material nozzle spraying a second reacting material, and the second source material nozzle and the second reacting material nozzle disposed in parallel in the first axis direction.

Description

Technical Field [0001] The present invention relates to a composite film deposition apparatus, a composite film deposition method, and a hybrid sealed film deposition apparatus,

The present invention relates to a composite film deposition apparatus, a composite film deposition method and a hybrid seal film deposition apparatus, and more particularly, to a composite film deposition apparatus, a composite film deposition method, and a hybrid seal film deposition apparatus capable of depositing a composite film in a single chamber .

Organic electronic devices such as organic light emitting diodes (OLEDs), organic solar cells, and organic thin film transistors (organic TFTs) are vulnerable to moisture and oxygen, and thus a sealing film forming process for protecting devices is required.

The sealing film is formed by laminating a barrier film for preventing moisture permeation and a buffer film for flexibility. In the past, in order to alternately laminate a multilayer structure film of a barrier film and a buffer film, it has been necessary to deposit a plurality of masks in a plurality of chambers. The process is cumbersome and the deposition equipment becomes large.

In addition, a linear deposition source may be used to deposit a barrier film and a buffer film. The conventional linear deposition source is mainly composed of an atomic layer deposition source. The linear deposition source is an inorganic film deposition source. An organic film deposition apparatus is required. In this case, too, there is a problem that a process using a plurality of masks in a plurality of deposition chambers and apparatuses is required to deposit a multilayer structure film. Conventionally, when an organic film is deposited by a chemical vapor deposition method, the source material and the reactive material are injected together from the same nozzle, so that a dense film structure can not be obtained, and the moisture permeation preventing property of the film is poor.

Korean Patent Registration No. 10-0467535

The present invention relates to a composite film deposition apparatus capable of depositing a composite film of a first material layer deposited by atomic layer deposition (ALD) in a single chamber and a second material layer deposited by chemical vapor deposition (CVD) in a single chamber, A composite film deposition method and a hybrid seal film deposition apparatus are provided.

According to an aspect of the present invention, there is provided a composite film deposition apparatus including: a substrate support for supporting a substrate; A deposition module located on the substrate, the deposition module including a linear atomic layer deposition source and a linear chemical vapor deposition source arranged side by side in a first axis direction across the substrate; And a driving unit connected to the substrate support or the deposition module to reciprocate the substrate support or the deposition module in a second axis direction intersecting the first axis direction, A first source material nozzle for spraying a first source material arranged in an axial direction and a first reaction material nozzle for spraying a first reaction material, wherein the linear chemical vapor deposition source is arranged in parallel in the first axis direction A second source material nozzle for injecting a second source material and a second reactant nozzle for injecting a second reactant material.

The first source material nozzle may be located between the first reaction material nozzles.

The linear chemical vapor deposition source may have the second reaction material nozzle located at the center of the linear chemical vapor deposition source and the second source material nozzle disposed at both sides of the second reaction material nozzle.

The first source material may comprise an organosilicon compound.

The second reactant nozzle may inject the second reactant and the additive material together.

The additive material may include at least one of the second source material and the organic compound.

In the deposition module, the linear atomic layer deposition source and the linear chemical vapor deposition source may be alternately arranged.

The linear atomic layer deposition source may consist of a plurality of successive atomic layer deposition submodules, each atomic layer deposition submodule being positioned symmetrically on either side of the linear chemical vapor deposition source in the deposition module.

Wherein the atomic layer deposition submodule includes a plurality of linear atomic layer deposition sources arranged in a row, wherein one of the plurality of linear atomic layer deposition sources arranged successively has a first source material nozzle and a second reaction material nozzle, The number of reactant nozzles may be one more.

The second source material and the second reactant may be sprayed in an activated state by a plasma.

Wherein the linear atomic layer deposition source and the linear chemical vapor deposition source each deposit a first material layer and a second material layer, the first material layer and the second material layer being a barrier layer and a buffer layer, Layer structure of the first material layer and the second material layer may be a protective film formed on the organic electronic device.

A composite film deposition method according to another embodiment of the present invention includes the steps of: (a) forming a first reactive material layer by spraying a first reactive material onto a substrate as a linear atomic layer deposition source; (b) forming a first source material layer by sputtering a first source material reacting with the first source material as the linear atomic layer deposition source onto the first source material layer; (c) forming the first reactive material layer by spraying the first reactive material onto the first source material layer as the linear atomic layer deposition source; (d) forming a second source material layer on the substrate by spraying a second source material into a linear chemical vapor deposition source arranged side by side with the linear atomic layer deposition source; (e) forming a second reactive material layer by spraying a second reactive material, which reacts with the second source material, onto the second source material layer as the linear chemical vapor deposition source; And (f) forming the second source material layer by spraying the second source material onto the second source material layer as the linear chemical vapor deposition source, wherein the first source material and the first source material A reactive material reacts to deposit a first layer of material and the second source material reacts with the second reactive material to deposit a second layer of material.

And alternately stacking the first material layer and the second material layer.

The method may further include repeating the steps (a) and (b).

The first source material may comprise an organosilicon compound.

In the step of forming the second reactive material layer by spraying the second reactive material, the second reactive material and the additive material may be injected together.

The additive material may include at least one of the second source material and the organic compound.

The second source material and the second reactant may be sprayed in an activated state by a plasma.

The first material layer may be a barrier layer, the second material layer may be a buffer layer, and the first material layer and the second material layer may be laminated to form a protective film for an organic electronic device.

According to another aspect of the present invention, there is provided a hybrid seal film deposition apparatus including: a substrate support for supporting a substrate; A deposition module located on the substrate, the deposition module including a linear atomic layer deposition source and a linear chemical vapor deposition source arranged side by side in a first axis direction across the substrate; And a driving unit connected to the substrate support and reciprocating the substrate support in a second axis direction intersecting the first axis direction, wherein the linear atomic layer deposition source comprises a barrier layer source material nozzle located at the center, And a barrier layer reaction material nozzle arranged on both sides of the barrier layer source material nozzle in parallel in the first axis direction, wherein the linear chemical vapor deposition source comprises a buffer layer source material nozzle arranged adjacent to the barrier layer reaction material nozzle, And a buffer layer reaction material nozzle disposed in parallel with the buffer layer source material nozzle in the first axis direction.

The buffer layer reaction material nozzle may simultaneously spray at least any one of a buffer layer source material and an organic compound together with a buffer layer reaction material.

The composite film deposition apparatus according to an embodiment of the present invention is a device for depositing a composite film of a first material layer and a second material layer in a single chamber using a deposition module in which a linear atomic layer deposition source and a linear chemical vapor deposition source are arranged side by side It is possible to deposit a dense and stable composite film.

In addition, since a plurality of source materials and a plurality of reaction materials are injected into respective nozzles, and each source material and a reactant react after forming a source material layer and a reactive material layer on a substrate, respectively, And it is possible to improve the moisture permeation preventing property of the membrane. In addition, the first reactive material can be supplied from both sides of the first source material to stably deposit the film, and the first source material nozzle can be prevented from being located at the outermost portion of the deposition module, It is also possible to prevent the deposition chamber from being contaminated due to a part of the source material.

Meanwhile, the second source material is injected onto the substrate on which the first reactant is injected, so that the first reactant and the second reactant are not adsorbed, so that the second reactant layer is completely formed on the first reactant layer It is possible to solve the problem of affecting the deposition reaction thereafter. Further, the multilayer film of the barrier layer and the buffer layer can be easily deposited by reciprocating the substrate, and the additive material can be injected together with the second reactant material to increase the thickness of the buffer layer or improve the flexibility of the buffer layer.

1 is a perspective view illustrating a deposition module according to an embodiment of the present invention;
2 is a cross-sectional view illustrating deposition by a composite film deposition apparatus according to an embodiment of the present invention;
3 is a conceptual diagram illustrating the reaction of BDEAS according to one embodiment of the present invention.
4 is a sectional view showing a modification of the deposition module according to an embodiment of the present invention.
5 is a flow diagram illustrating a composite film deposition method in accordance with another embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. It will be apparent to those skilled in the art that the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, It is provided to let you know. In the description, the same components are denoted by the same reference numerals, and the drawings are partially exaggerated in size to accurately describe the embodiments of the present invention, and the same reference numerals denote the same elements in the drawings.

FIG. 1 is a perspective view of a deposition module according to an embodiment of the present invention, and FIG. 2 is a cross-sectional view illustrating deposition by a composite film deposition apparatus according to an embodiment of the present invention.

Referring to FIGS. 1 and 2, a composite film deposition apparatus according to an embodiment of the present invention includes a substrate support 100 for supporting a substrate 10; A deposition module 210 including a linear atomic layer deposition source 210 and a linear chemical vapor deposition source 220 arranged side by side in the first axis direction across the substrate 10 and corresponding to the substrate 10, 200); And a driving unit 300 connected to the substrate support 100 or the deposition module 200 to reciprocate the substrate support 100 or the deposition module 200 in a second axis direction intersecting the first axis direction ).

The substrate support 100 may be supported by the substrate 10 and may be reciprocated by the actuation of the driver 300. In this case, the first source material 11, the first reactant 12, Allowing the source material 21 and the second reactant material 22 to be sprayed over the entire area of the substrate 10, respectively.

The deposition module 200 sprays a first source material 11, a first reaction material 12, a second source material 21 and a second reaction material 22 on a substrate 10, And the deposition surface of the deposition target. The deposition module 200 may be located on the top of the substrate 10 or on the bottom of the substrate 10 and is not limited thereto and may include a first source material (11), the first reaction material (12), the second source material (21), and the second reaction material (22). The deposition module 200 may include a linear atomic layer deposition source (ALD) 210 and a linear chemical vapor deposition source (CVD) 220. The linear atomic layer deposition source 210 and the linear chemical vapor deposition source 220 may be arranged in parallel in the first axis direction across the substrate 10 and may include a plurality of linear atomic layer deposition sources 210 and at least one The linear chemical vapor deposition source 220 may be extended and arranged side by side. A linear atomic layer deposition source (ALD) 210 can deposit a first material layer 15, which is dense and has excellent uniformity, by depositing a material layer in atomic layer units, and a linear chemical vapor deposition source (CVD) 220 A relatively high deposition rate can be realized. In addition, the linear chemical vapor deposition source 220 may use the plasma to make the second material layer 25 have better properties. The linear atomic vapor deposition source 210 can be used in a larger number than the linear chemical vapor deposition source 220. Since the linear chemical vapor deposition source 220 can realize a relatively high deposition rate, 25 can be effectively deposited, the linear atomic layer deposition source 210 can deposit a first material layer 15 on an atomic layer basis, so that the deposition rate is low, so that a large number of atoms can be used to realize a high deposition rate have.

The driving unit 300 may be connected to the substrate support 100 or the deposition module 200 to reciprocate the substrate support 100 or the deposition module 200 in a second axis direction intersecting the first axis direction, The first material layer 15 and the second material layer 25 may be alternately stacked on the entire region of the substrate 10 by the reciprocating movement of the substrate support 100 or the deposition module 200. [ The driving unit 300 includes a power source 310 for providing power, a power transmission unit 320 for transmitting power provided from the power source 310, and a connection unit 320, which is fixed to the substrate support 100 and connects to the power transmission unit 320, The substrate support 100 or the deposition module 200 may be reciprocated in the second axis direction.

The linear atomic layer deposition source 210 can deposit the first material layer 15 in an atomic layer deposition (ALD) manner in which elements necessary for thin film deposition are alternately supplied and adsorbed one by one on the substrate, The evaporation source 220 can deposit the second material layer 25 by a chemical vapor deposition (CVD) method in which a thin film is deposited by chemical action. Here, the linear chemical vapor deposition source 220 can deposit the second material layer 25 even at a low substrate temperature by a plasma chemical vapor deposition (PECVD) method in which reactivity of a raw material is enhanced by using plasma. The second material layer 25 may be the same as or different from the first material layer 15. If the first material layer (e.g., SiO _x layer) and the second material layer (e. G., SiO _x layer) are the same, then the first material layer 15 is deposited by atomic layer deposition and is dense, And the second material layer 25 can be deposited by a chemical vapor deposition method and can be deposited at a high speed and can be used as a buffer layer because the CH group can be easily doped. On the other hand, when the first material layer 15 and the second material layer 25 is different, the first material layer 15 may be SiO _x layer, the second material layer 25 is SiN _x layers, SiO _x N _y layer, a SiO _x N _y C _z layer, or the like.

The linear atomic layer deposition source 210 includes a first source material nozzle 211 for spraying a first source material 11 arranged in parallel to the first axis direction and a second source material nozzle 211 for spraying a first reaction material 12 Wherein the linear chemical vapor deposition source (220) includes a second source material nozzle (221) for spraying a second source material (21) arranged side by side in the first axis direction, and a second source material nozzle And a second reaction material nozzle 222 for spraying the second reaction material 22. The linear atomic layer deposition source 210 deposits a first material layer 15 by spraying a first source material 11 and a first reactant material 12, The first reaction material 11 and the first reaction material 12 are reacted and deposited. At this time, the first source material 11 and the first reaction material 12 sequentially arrive on the substrate 10 without a gas phase reaction and react only on the substrate 10 to deposit the first material layer 15 do. The linear chemical vapor deposition source 220 deposits a second source material 21 and a second reactant material 22 to deposit a second material layer 25, (21) and the second reactant (22) are reacted and deposited. At this time, the second source material 21 and the second reaction material 22 sequentially reach the substrate 10 through the second source material nozzle 221 and the second reaction material nozzle 222, respectively, Lt; RTI ID = 0.0 > 10). ≪ / RTI >

On the other hand, a vacuum exhaust port can be arranged for each space between adjacent nozzles (for example, a first source material nozzle, a first reaction material nozzle, a second source material nozzle and a second reaction material nozzle), and the vacuum exhaust port To exhaust excess gaseous materials and deposition by-products that have not been contributed to the deposition.

The linear atomic layer deposition source 210 may be formed by atomic layer deposition so that the first source material 11 and the first reactant material 12 are simultaneously injected through the first source material nozzle 211 and the first reactant nozzle 212 And the substrate 10 is moved in a section corresponding to the linear atomic layer deposition source 210 so that any arbitrary position of the substrate 10 is transferred to the first source material 11 and the first reaction material 12 In this case, one atom can be deposited atom-by-atom, so that a dense film structure and excellent uniformity can be obtained. The linear chemical vapor deposition source 220 is also simultaneously sprayed through the second source material nozzle 221 and the second reaction material nozzle 222 like the linear atomic layer deposition source 210. The source material and the reactive material are injected into the same nozzle (Or a plasma chemical vapor deposition) source which simultaneously injects a thin film on the surface of the substrate. However, a denser film structure can be obtained. On the other hand, when the second material layer 25 is used for a protective film for an organic electronic device, the moisture permeation preventing property is required. Due to the dense film structure, the moisture permeation preventing property can be improved, Can solve the problem.

The first source material nozzles 211 may be located between the first reactant nozzles 212. When the source material nozzle is located at the outermost part of the deposition module, some of the source material injected to the outer portion of the substrate may not participate in the deposition reaction of the film and may be scattered to contaminate the deposition chamber. 11), the organosilicon compound contains a large amount of CH groups, so that more contaminants are generated. However, in the present invention, the first source material nozzle 211 is located between the first reaction material nozzles 212 so that the first reaction material 12 is supplied from both sides of the first source material 11, The material 11 and the first reactant 12 react well, and the film can be stably deposited. In addition, when the first source material nozzle 211 is located between the first reaction material nozzles 212, it is possible to prevent the first source material nozzle 211 from being located at the outermost portion of the deposition module 200 It may be possible to prevent some of the first source material 11 from participating in film deposition and scattering. It is possible to solve the problem that a part of the first source material 11 that does not participate in the film deposition but is scattered causes contamination of the deposition chamber.

Alternatively, the first source material nozzle 211 may be located at the outermost portion of the deposition module 200, depending on the deposition conditions (e.g., a substrate on which the first source material is well deposited).

The first source material 11 may comprise silicon (Si) and the first reactant material 12 may comprise oxygen (O), wherein the first reactant material 12, such as oxygen, The first material layer 15 can be effectively deposited on the substrate 10 by first spraying the first reactant material 12 onto the substrate 10 and then spraying the first source material 11 such as silicon . In addition, when the first reactive material 12 having good reactivity is sprayed after the first source material 11 is sprayed, not only the reaction with the first source material 11 is well performed, The second material layer 25 can be deposited well. To this end, the first source material nozzle 211 may be located between the first reaction material nozzles 212.

And the first source material 11 may utilize a chemical material (e.g., BDEAS) that is readily adsorbed to oxygen atoms without the use of a plasma. In this case, the first source material 11 may not adsorb well on the substrate 10 without oxygen atoms on the substrate 10 during the initial deposition. On the other hand, if the oxygen that can be used as the first reactant 12 is supplied as an oxygen radical by using plasma, it is possible to prevent the oxidation of the noble metal (for example, gold, platinum, etc.) And is well adsorbed to the substrate 10 other than the material. Therefore, when the first reaction material 12 such as oxygen is adsorbed on the surface of the substrate 10 and then the first source material 11 is sprayed, the first reaction material layer 12 formed by the first reaction material 12 The first source material 11 such as silicon can be well adsorbed. Accordingly, the first source material 11 may be a chemical material that easily adsorbs oxygen atoms without using plasma.

The linear chemical vapor deposition source 220 has a structure in which the second reaction material nozzle 222 is located at the center of the linear chemical vapor deposition source 220 and the second source material nozzle 221 is located at both sides of the second reaction material nozzle 222 As shown in FIG. When the source material nozzle is disposed at the center of both the linear atomic layer deposition source 210 and the linear chemical vapor deposition source 220 and the reaction material nozzle is disposed at both sides of the source material nozzle, The first reaction material nozzle 212 and the second reaction material nozzle 222 are brought into contact with each other when the linear chemical vapor deposition source 220 is disposed in contact with each other. In this case, when a substance that is not adsorbed to each other (e.g., oxygen and nitrogen) is used for the first reaction material 12 and the second reaction material 22, The first reactant material 12 and the second reactant material 22 later sprayed on the second reactant material layer 22 are not adsorbed on the first reactant material layer 22 and the second reactant material layer 22 is not adsorbed on the second reactant material layer 22, A problem occurs that the user can not participate. Further, there arises a problem that any one of the first reaction material 12 and the second reaction material 22 can not participate in the deposition after that, and the first source material 11 or the second source material 21, In the case of a substance which reacts only with the first reaction material 12 or the second reaction material 22, any one of the first reaction material layer 12 and the second reaction material layer 22 is not formed A further problem arises in which neither the first source material layer 11 nor the second source material layer 21 is formed.

However, in the present invention, the second source material nozzle 221 is disposed on both sides of the second reaction material nozzle 222 with the second reaction material nozzle 222 as the center, so that the first reaction material 12 is sprayed 2 source material 21 is first sprayed and the second reactant material 22 is sprayed so that the second source material layer 21 and the second reactant material layer 22 are well sprayed on the first reactive material layer 12, . When the second source material 21 is injected again after the second reaction material 22 is injected, the first reactive material 12 to be injected is sprayed onto the second material layer 25, So that both the source material nozzle and the source material injected from the reactant nozzle and the reactant material can form a respective source material layer and reactant material layer. Here, the second source material 21 may be a material that reacts (or adsorbs) with the first reaction material (layer).

The first source material 11 may comprise an organosilicon compound. The organic silicon compound is an organic compound containing silicon (Si) and carbon (C), and includes bisdiethylamino silane (BDEAS), diisoprophylamino silane (DIPAS) and nonstarch butylamino And may include bistertiarybutylamino silane (BTBAS). This organosilicon compound is characterized by depositing a first material layer (e.g., a silicon oxide layer or a SiO _x layer) without creating excessive reactive species or ions that damage the substrate 10 or the second material layer 25 . The organosilicon compound does not require the formation of a direct or remote plasma during the deposition process of the first material layer 15 and can be performed at a relatively low temperature in atomic layer deposition (ALD) The first material layer 15 may be deposited by an adsorption reaction. The following is an example of BDEAS.

3 is a conceptual diagram illustrating the reaction of BDEAS according to an embodiment of the present invention.

Referring to FIG. 3, silicon oxide (SiO ₂ ) or silicon dioxide (SiO ₂ ) may be generated by reaction of BDEAS with oxygen (or adsorption reaction), and BDEAS may be generated by using silicon (O) reacts well. The BDEAS that is present at ambient temperature as a liquid can be supplied to the first source material nozzle 211 by a variety of methods, one of which is to supply the BDEAS in a vapor state using a carrier gas. The carrier gas may include argon (Ar) gas, helium (He) gas or nitrogen (N ₂ ) gas. On the other hand, when BDEAS is activated by plasma in atomic layer deposition (ALD), it is difficult to form a thin film in atomic layer units.

A process of forming the first source material layer 11 using the BDEAS source will be described in the following.

The BDEAS reacts with the surface of the film on which the first reactive material 12 is deposited (i.e., the oxygen exposed on the surface of the film), so that the bonding with the silicon (Si) in the BDEAS is broken, Whereby the BDEAS is adsorbed. Then, when a first reactive material (that is, an oxygen radical) is supplied to the surface, the remaining bonds attached to the silicon (Si) of the BDEAS are cut off and oxygen is bonded thereon to form a first source material layer 11 do.

And BDEAS reacts easily with oxygen atom (O) to form a SiO _x layer, but it has poor ability to bond with nitrogen atoms. BDEAS can easily react with oxygen atoms because silicon (or silicon) bonds with oxygen atoms to form Si-O bonds, but in the case of nitrogen atoms, silicon (Si) of BDEAS is already bonded to nitrogen atoms Therefore, the ability to bond with nitrogen atoms is significantly reduced. Because of this property, the BDEAS layer is not formed where the nitrogen atom layer is formed on the surface of the film.

When the first reaction material nozzle 212 and the second reaction material nozzle 222 are brought into contact with each other using the gas containing oxygen atoms and nitrogen atoms as the first reaction material 12 and the second reaction material 22, The nitrogen atoms are not adsorbed on the first reactive material layer 12 covered with the nitrogen and the oxygen atoms are not adsorbed on the second reactive material layer 22 covered with nitrogen. Here, using BDEAS as the first source material 11 allows the second reactive material nozzle 212 and the second reactive material nozzle 222 to be in contact with each other, The reactive material layer 22 is not formed and neither the first source material layer 11 nor the first reactive material layer 12 can be formed on the second reactive material layer 22, The first material layer 15 may not be able to deposit.

However, in the present invention, in the linear chemical vapor deposition source 220, the second reaction material nozzle 222 is located at the center of the linear chemical vapor deposition source 220, the second source material nozzle 221 is located at the second reaction material nozzle 220, The BDEAS which is not required to be activated by using the plasma can be used as the first source material 11 and the multilayer film of the SiO _x layer and the SiN _x layer can be simply deposited.

The second reactant nozzle 222 may inject the second reactant 22 and the additive material together. Spraying the second reactant material 22 and the additive material together can increase the thickness of the second material layer 25 or increase the flexibility of the multilayer film comprising the second material layer 25, It is possible to increase both the thickness of the layer 25 and the flexibility of the multilayer film.

The additive material may include at least one of a second source material 21 and an organic compound. The second source material 21 may comprise monosilane (SiH ₄ ). The monosilane contains silicon and reacts with nitrogen to form an SiN _x layer and react with oxygen to form a SiO _x layer. Thus, using a monosilane as the second source material 21, a second source material layer 21 may be formed on the first reactive material layer 12 comprising oxygen, and a second source material layer 21 may be formed with a second reactive material layer 22 containing nitrogen. The second source material nozzle 221 and the second reaction material nozzle 222 may be connected to each other without mixing the second source material 21 and the second reaction material 22 during the injection of the linear chemical vapor deposition source 220. [ The thickness of the second source material layer 21 is made thinner and thus the thickness of the second material layer 25 is made thinner although the dense film structure can be obtained. In order to compensate for this disadvantage, mixing the second source material 21 and the second reactant material 22 in the second reaction material nozzle 222 and spraying the mixture may stabilize the deposition of the second material layer 25, And the second material layer 25 can be well deposited by a second source material layer 21 that is formed first on the first reactive material layer 12. [ On the other hand, when the second reaction material nozzle 222 is used together with the second reaction material 22 and the additive material, only the second reaction material nozzle 222 may be used without using the second source material nozzle 221 .

The organic compound is a compound containing carbon (C) and may include BDEAS, hexamethyldisiloxane (HMDSO), hexamethyldisilazane (HMDS), and ethane (C ₂ H ₆ ). When an organic compound such as BDEAS, HMDSO, HMDS, or ethane is injected together with the second reactant 22 in the second reaction material nozzle 222 together with the additive material, a CH group is added to the second material layer 25, The flexibility of the material layer 25 is improved and the multilayer film including the second material layer 25 can secure extreme flexibility at the foldable level.

Further, if the second source material 21 and the organic compound are used together as the additive material, the second material layer 25 can be thickly deposited and the flexibility of the second material layer 25 can be improved . And the multi-layered film including the second material layer 25 may secure extreme flexibility at the foldable level.

FIG. 4 is a cross-sectional view showing a modification of the deposition module according to an embodiment of the present invention. FIG. 4 (a) is a view in which a linear atomic layer deposition source and a linear chemical vapor deposition source are alternately arranged, ) Is a diagram in which a plurality of linear atomic layer deposition sources are symmetrically arranged on both sides with a linear chemical vapor deposition source as the center.

Referring to FIG. 4, the deposition module 200 may be arranged such that the linear atomic layer deposition source 210 and the linear chemical vapor deposition source 220 are alternately arranged as shown in FIG. 4 (a). In this case, the second material layer 25 is deposited only on a predetermined region of the substrate 10 (for example, an area corresponding to the deposition area of the linear chemical vapor deposition source) with only one linear chemical vapor deposition source 220 The moving distance of the substrate 10 can be reduced, thereby reducing the length of the deposition chamber and reducing the footprint of the deposition equipment as the length of the deposition chamber is reduced. This makes it possible to reduce the cost of equipment manufacturing and to secure space in a clean room.

4 (b), a plurality of linear atomic layer deposition sources 210 are continuously arranged to form an atomic layer deposition submodule 215, and the atomic layer deposition submodule 215 is connected to the deposition module 200 And may be symmetrically located on both sides of the linear chemical vapor deposition source 220, respectively. When the plurality of atomic layer deposition submodules 215 are symmetrically positioned on both sides of the linear chemical vapor deposition source 220, the first material layer 15 And the second material layer 25 is uniformly deposited on the entire region of the substrate 10 through the region corresponding to the central linear chemical vapor deposition source 220, . At this time, the substrate support 100 or the deposition module 200 can be reciprocated so that the entire area of the substrate 10 passes through a section corresponding to the linear chemical vapor deposition source 220. If the entire area of the substrate 10 is reciprocated while passing through the section corresponding to the linear chemical vapor deposition source 220 by the reciprocating motion of the substrate support 100 or the deposition module 200, The second material layer 25 can be uniformly deposited. The second material layer 25 can be uniformly deposited on the entire region of the substrate 10 and the second region 25 can be uniformly deposited on the entire region of the substrate 10 with a small number of the linear chemical vapor deposition sources 220, The material layer 25 can be deposited. On the other hand, if the length of the atomic layer deposition sub-module 215 in the second axial direction is greater than or equal to the second axial length of the substrate 10, the length of the deposition chamber is reduced and the footprint of the deposition equipment is reduced Therefore, it is possible to reduce the manufacturing cost of the equipment and to secure the space of the clean room.

The atomic layer deposition submodule 215 is configured such that one of a plurality of sequentially disposed linear atomic layer deposition sources 210 is one in which the first source material nozzle 211 and the first reaction material nozzle 212 are arranged one by one The number of the first reactant nozzles 212 may be one more than the remaining linear atomic layer deposition source 210b. A plurality of linear atomic layer deposition sources 210 may be disposed so that the first source material nozzles 211 are located between the first reaction material nozzles 212 and the number of the first reaction material nozzles 212 One more linear atomic layer deposition source 210a may be disposed such that the first reactant nozzles 212 are symmetrically disposed about the first source material nozzles 211 on both sides and the atomic layer deposition sub- The first reaction material nozzles 212 may be located on the outermost sides of both sides. The atomic layer deposition submodule 215 has a plurality of first source material nozzles 211 located at the center and a plurality of first source material nozzles 211 located at both sides of the first source material nozzle 211 since the linear atomic layer deposition source 210 is continuously disposed. When the linear atomic layer deposition source 210a composed of the first reaction material nozzle 212 is continuously disposed, the first reaction material nozzle 212 is connected to the first reaction material nozzle (not shown) of the adjacent linear atomic layer deposition source 210a 212) and the deposition becomes inefficient. The first reactive material nozzle 211 may be reduced by one in the remaining linear atomic layer deposition source 210b except for one of the plurality of linear atomic layer deposition sources 210 of the deposition module 200. [ In such a case, the first source material nozzle 211 may be located between the first reaction material nozzles 212, while the deposition by the atomic layer deposition submodule 215 becomes efficient, and the first reaction material nozzle 211 The length of the deposition module 200 can be reduced and the length of the deposition chamber can be further reduced. In addition, as the length of the deposition chamber is reduced, the footprint of the deposition equipment can be reduced, equipment manufacturing cost can be reduced, and space for the clean room can be easily secured.

On the other hand, the atomic layer deposition sub-module 215 can be arranged such that the linear atomic layer deposition source 210a or 210b is freely and continuously arranged such that the first source material nozzle 211 is positioned between the first reaction material nozzles 212 have.

The second source material 21 and the second reactant material 22 may be sprayed in an activated state by the plasma. In this case, the second source material layer 21 and the second reactive material layer 22 can be stably and uniformly formed on the entire surface of the substrate, and the second source material (layer) and the second reactive material The second material layer 25 is effectively deposited and deposited, and can have excellent properties. In the case of the second source material 21, an element (for example, silicon) used as a source by plasma can be activated, and thus an element used as a source can react well with the reactant, All materials including the elements used can be used as the second source material 21. From which it is possible to deposit the second material layer 25 regardless of the type of the source material.

On the other hand, the first reactant 12 can also be sprayed in an activated state by the plasma. Also in this case, the first reactive material 12 can be stably and uniformly formed on the entire surface of the substrate, and the first material layer 15 can have excellent characteristics by effectively reacting with the first source material 11. If the first source material 11 is activated by a plasma when the organosilicon compound is used as the first source material 11, the first source material 11 can be activated by the plasma, The first source material 11 is reacted and formed on the substrate 10 in a lump state before reaching the substrate 10 so that the film is not stable and since the film can not be formed thinly in atomic layer units, desirable.

The linear atomic layer deposition source 210 and the linear chemical vapor deposition source 220 deposit the first material layer 15 and the second material layer 25 respectively and form the first material layer 15 and the second material layer 25, (25) is a barrier layer and a buffer layer, and the laminated structure of the first material layer (15) and the second material layer (25) may be a protective film formed on the organic electronic device. The first material layer 15 may be a SiO _x layer wherein the first source material 11 may comprise silicon (Si) and the first reactant material 12 may comprise oxygen. As the first source material 11, bis (diethylamino) silane (BDEAS), DIPAS or BTBAS may be used. As the first reactant 12, nitrous oxide (N ₂ O) , Oxygen (O ₂ ), nitrogen monoxide (NO), ozone (O ₃ ) and the like can be used. If the first material layer 15 is a barrier layer, a barrier layer having dense and excellent uniformity can be deposited by the linear atomic layer deposition source 210, and a plurality of linear atomic layer deposition sources 210 can be used to deposit the barrier layer It is possible to increase the thickness and increase the moisture permeation prevention efficiency. Further, when the first material layer 15 is a SiO _x layer, the moisture permeation prevention efficiency is excellent.

The second material layer 25 may be a SiN _x layer wherein the second source material 21 may comprise silicon and the second reactant material 22 may comprise nitrogen (N ₂ ). Monosilane, BDEAS, DIPAS and BTBAS may be used as the second source material 21 and nitrogen (N ₂ ) and ammonia (NH ₃ ) may be used as the second reaction material 22. When a CH group is added to the SiN _x layer, the flexibility of the buffer layer can be controlled to ensure extreme flexibility at the foldable level. A gas containing a CH group can be used for the addition of the CH group. Examples of the gas containing the CH group include BDEAS, HMDSO, HMDS, and ethane.

The second material layer 25 may be a SiO _x layer such as the first material layer 15. The second source material 21 and the second reactant material 22 may be the same as the first source material 11 and the first reactant material 12 and the second material layer 25 may be a linear chemical vapor phase And can be deposited by a chemical vapor deposition (CVD) method using an evaporation source 220. When the CH group is added to the SiO _x layer, the flexibility of the buffer layer can be controlled to ensure extreme flexibility at the foldable level. A gas containing a CH group can be used for the addition of the CH group. Examples of the gas containing the CH group include BDEAS, HMDSO, HMDS, and ethane.

On the other hand, the thickness of the second material layer 25 may be about 3 to 200 ANGSTROM. As the barrier layer and the buffer layer of the protective layer, an SiO _x layer and an SiN _x layer are formed as an ultra-thin multi-layered film having a thickness of about several angstroms and about several tens of angstroms In the case of vapor deposition, excellent moisture permeation prevention efficiency can be obtained and flexibility characteristics can be ensured.

As described above, in the composite film deposition apparatus according to an embodiment of the present invention, a composite film of the first material layer and the second material layer is formed in a single chamber using a deposition module in which a linear atomic layer deposition source and a linear chemical vapor deposition source are arranged side by side, It is possible to deposit a dense and stable composite film. In addition, since a plurality of source materials and a plurality of reaction materials are sprayed respectively and reacted after each source material and reactant reach the substrate, a dense structure film can be deposited on the substrate, and the moisture permeation prevention property of the film can be improved . In addition, the first reactive material can be supplied from both sides of the first source material to stably deposit the film, and the first source material nozzle can be prevented from being located at the outermost portion of the deposition module, It is also possible to prevent the deposition chamber from being contaminated due to a part of the source material. Meanwhile, the second source material is sprayed onto the substrate on which the first reactive material is sprayed, so that the first and second reactive materials are not adsorbed, thereby preventing deposition of the deposition material (that is, At least one of a plurality of reaction materials) can be solved. The multilayer film of the barrier layer and the buffer layer can be deposited simply by reciprocating the substrate or the deposition module, and the additive material can be injected together with the second reactant material to increase the thickness of the buffer layer or improve the flexibility of the buffer layer.

5 is a flowchart illustrating a composite film deposition method according to another embodiment of the present invention.

Referring to FIG. 5, the method of depositing a composite film according to another embodiment of the present invention will be described in detail. However, the elements overlapping with those described above in connection with the composite film deposition apparatus according to an embodiment of the present invention will be omitted .

According to another embodiment of the present invention, there is provided a composite film deposition method including the steps of: (a) forming a first reactive material layer by spraying a first reactive material onto a substrate as a linear atomic layer deposition source; (b) forming a first source material layer by sputtering a first source material reacting with the first source material as the linear atomic layer deposition source on the first source material layer (S200); (c) forming the first reactive material layer by spraying the first reactive material onto the first source material layer as the linear atomic layer deposition source (S300); (d) forming a second source material layer on the substrate by spraying a second source material into a linear chemical vapor deposition source arranged alongside the linear atomic layer deposition source (S400); (e) forming a second reactive material layer by spraying a second reactive material that reacts with the second source material as the linear chemical vapor deposition source on the second source material layer (S500); And (f) forming the second source material layer by spraying the second source material onto the second source material layer as the linear chemical vapor deposition source, wherein the first source material The first reactant reacts to deposit a first material layer, and the second source material and the second reactant react to deposit a second material layer.

In the embodiments of the present invention, the above steps can be performed with a single mask in a single chamber, wherein the first source material, the first reactant, the second source material, and the second source material are used as the linear atomic layer deposition source and the linear chemical vapor deposition source, (Or reciprocating) the substrate so that all of the reactive material is simultaneously sprayed through the respective nozzles and any region of the substrate is scanned in each nozzle from which each material is ejected, The reactive material layer, the second source material layer, and the second reactive material layer may be formed over the entire area of the substrate.

The steps (a) to (f) are not meant to be limiting in order, but are used to refer to each step. The steps (d) to (f) are performed first by adjusting the order of the steps (a) to (c) and the steps (d) To (c) may be performed. For example, when each step is performed by moving the substrate, the order may be changed as described above according to the moving direction of the substrate.

In one embodiment, a first reactive material is first sprayed onto a substrate as a linear atomic layer deposition source to form a first reactive material layer (SlOO). The first reaction material may include oxygen (O). Since the first reaction material such as oxygen has good reactivity, the first reaction material is first sprayed onto the substrate, and then a first source material such as silicon Upon spraying, a first layer of material may be deposited on the substrate effectively. Since the first reactive material nozzle must be located outside the first source material nozzle in order to inject the first reactive material first, it is possible to prevent the first source material nozzle from being located outside the linear atomic layer deposition source So that a portion of the first source material that does not participate in the film deposition and is scattered may be prevented from contaminating the deposition chamber.

Next, a first source material reacting with the first reactive material is sprayed onto the first reactive material layer as the linear atomic layer deposition source to form a first source material layer (S200). Here, the first source material and the first reactive material react with each other to deposit the first material layer. When the first source material is sprayed onto the substrate onto which the first reactant is sprayed, the first source material layer is well formed on the substrate, and the first material layer can be deposited well.

The first source material may comprise an organosilicon compound. The organic silicon compound is an organic compound containing silicon (Si) and carbon (C), and includes bisdiethylamino silane (BDEAS), diisoprophylamino silane (DIPAS) and nonstarch butylamino And may include bistertiarybutylamino silane (BTBAS). This feature of the organosilicon compound can deposit the first material layer (silicon oxide layer or SiO _x layer) without creating excessive reactive species or ions that damage the substrate or the second material layer. The organosilicon compound does not require the formation of a direct or remote plasma during the deposition of the first material layer, but rather reacts with oxygen radicals or ozone (O ₃ ) at relatively low temperatures to deposit the first material layer can do. Here, the first source material may be a material which reacts only with the first reaction material.

Next, the first reactive material is sprayed onto the first source material layer as the linear atomic layer deposition source to form the first reactive material layer (S300). When the first reactive material having good reactivity is sprayed after the first source material is sprayed, the reaction with the first source material is well performed, and the second material layer is deposited well on the first material layer have. To this end, a plurality of the linear atomic layer deposition sources may be arranged such that the first reaction material nozzles are located on both sides of the first source material nozzle. When the first reaction material nozzle is positioned on both sides of the first source material nozzle, the reaction between the first source material and the first reaction material stably occurs and the film deposition can be performed well.

A second source material is sprayed onto the substrate in a linear chemical vapor deposition source arranged alongside the linear atomic layer deposition source to form a second source material layer (S400). Here, the second source material may be a material that reacts (or adsorbs) with the first reactive material (layer), for example, monosilane, BDEAS, DIPAS, BTBAS, or the like. When the linear atomic layer deposition source and the linear chemical vapor deposition source both spray the reactant material first, then the source material is sprayed, and the reactive material is sprayed again, the linear atomic layer deposition source and the linear chemical vapor deposition source are in contact with each other The first reaction material and the second reaction material are brought into contact with each other. In this case, when a substance that is not adsorbed to each other (for example, oxygen and nitrogen) is used as the first reactant and the second reactant, the second reactant is not adsorbed to the first reactant layer, The first reactive material is not adsorbed to the second reactive material layer, so that a substance that is later injected into the first reactive material and the second reactive material is not able to participate in deposition. Further, there arises a problem that after that, any one of the first reactant and the second reactant can not participate in the deposition, and that the first source material or the second source material reacts with the first reactant or the second reactant, In the case of a material which reacts only with the second reactive material, the first source material layer or the second source material layer is formed due to no material layer of the first reactive material layer and the second reactive material layer being formed A larger problem arises. However, in the present invention, after the first reactive material is sprayed, the second source material is sprayed instead of the second reactive material to form the second source material layer on the first reactive material layer, It is possible to prevent the second reaction material from being generated. When the second reactant material is sprayed after the second source material layer is formed, the second reactant material reacts with the second source material, and by this reaction, the second material layer is sprayed over the entire substrate So that it is uniformly deposited.

The second source material may be sputtered in an activated state by a plasma. In this case, the second source material layer can be stably and uniformly formed on the entire surface of the substrate, and the second source material (layer) and the second reactive material (layer) Well-deposited, and can have excellent properties. And an element used as a source (for example, silicon) can be activated by a plasma, and thus an element used as a source can react well with a reactant. Therefore, Can be used as a second source material.

Thereafter, a second reactive material reacting with the second source material is sprayed onto the second source material layer as the linear chemical vapor deposition source to form a second reactive material layer (S500). When the second reactant material is sprayed onto the second source material layer, the second source material and the second reactant react to deposit the second material layer.

The second reactant may be sprayed in an activated state by a plasma. In this case, the second reactive material layer can be stably and uniformly formed on the entire surface of the substrate, and the second source material (layer) and the second reactive material (layer) Well-deposited, and can have excellent properties.

In step S500 of forming the second reactive material layer by spraying the second reactive material, the second reactive material and the additive material may be injected together. When the second reactive material and the additive material are injected together, it is possible to increase the thickness of the second material layer or increase the flexibility of the multi-layered film including the second material layer, The flexibility of the multilayer film may be increased.

The additive material may include at least one of the second source material and the organic compound. The second source material may comprise monosilane (SiH ₄ ). The monosilane contains silicon and reacts with nitrogen to form an SiN _x layer and react with oxygen to form a SiO _x layer. Thus, using the monosilane as the second source material, a second source material layer may be formed on the first reactive material layer containing oxygen, and a second source material layer containing nitrogen may be formed on the second source material layer. 2 reactive material layer may be formed. On the other hand, when the linear chemical vapor deposition source is sprayed, the second source material and the second reaction material are sprayed through the second source material nozzle and the second reaction material nozzle without mixing, , The thickness of the second source material layer is made thinner, and the thickness of the second material layer is thereby thinned. In order to compensate for this disadvantage, mixing the second source material and the second reaction material in the second reaction material nozzle and injecting the mixture may stabilize the deposition and thicken the second material layer, The second material layer may be deposited well by the second source material layer that is formed first on the material layer.

The organic compound is a compound containing carbon (C), and may include hexamethyldisiloxane (HMDSO), hexamethyldisilazane (HMDS), and ethane (C ₂ H ₆ ). When the second reactive material and the organic compound such as HMDSO, HMDS, and ethane are injected together in the second reaction material nozzle, a CH group is added to the second material layer to improve the flexibility of the second material layer And the multi-layered film including the second material layer can secure extreme flexibility at a foldable level.

In addition, when the second source material and the organic compound are used together as the additive material, the second material layer can be thickly deposited and the flexibility of the second material layer can be improved. The multi-layered film including the second material layer may have extreme flexibility at the foldable level.

Next, the second source material is sprayed onto the second reactive material layer as the linear chemical vapor deposition source to form the second source material layer (S600). When the second source material is injected again after the second reactant material is sprayed, the first reactant material that is sprayed may be formed to form the first reactive material layer well, Both the source material and the reactive material injected from the material nozzle can form a respective layer of the source material and the reactive material.

And alternately stacking the first material layer and the second material layer. The first material layer and the second material layer may be alternately stacked to deposit a multi-layer composite film. When the first material layer is a barrier layer and the second material layer is a buffer layer, Can be simply deposited. Wherein the first material layer and the second material layer are alternately laminated by reciprocating the substrate or by reciprocating the linear atomic layer deposition source and the linear chemical vapor deposition source to deposit the first material layer and the second material layer, The second material layer can be alternately laminated.

The method may further include repeating the steps (a) and (b). Since the linear atomic layer deposition source is deposited on an atomic layer basis, the thickness of the first material layer deposited by the linear atomic layer deposition source moved at a constant speed is reduced. Accordingly, the thickness of the first material layer may be increased by repeating the step of spraying the first reactive material and the step of spraying the first source material in order to increase the moisture permeation prevention efficiency proportional to the thickness of the film. For this purpose, a high deposition rate can be achieved using a large number of the above-described linear atomic layer deposition sources. In this case, the first material layer, which is thicker than the second material layer, may be deposited before the second material layer is deposited, thereby increasing the moisture permeation prevention efficiency of the first material layer in proportion to the thickness of the first material layer .

The first material layer may be a barrier layer, the second material layer may be a buffer layer, and the first material layer and the second material layer may be laminated to form a protective film for an organic electronic device. The first material layer may be a SiO _x layer, where the first source material may comprise silicon and the first reactant material may comprise oxygen. And the first source material, and the like BDEAS, DIPAS, BTBAS, wherein a first reactant is nitrous oxide (N ₂ O), oxygen (O _2), nitrogen monoxide (NO), ozone (O ₃ ) Can be used. If the first material layer is a barrier layer, the barrier layer having dense and excellent uniformity can be deposited by the linear atomic layer deposition source, and the thickness of the barrier layer can be increased by the plurality of linear atomic layer deposition sources, The efficiency can be increased. Further, when the first material layer is a SiO _x layer, the moisture permeation prevention efficiency is excellent. If the first material layer is a barrier layer, when the first material layer is first deposited on the substrate, the moisture vapor barrier effect is excellent. In the initial stage of vapor deposition, the first atomic layer deposition source It is possible to further improve the moisture permeation prevention efficiency when the second material layer is deposited on the first material layer as the linear chemical vapor deposition source.

The second material layer may be a SiN _x layer, wherein the second source material may comprise silicon and the second reactant material may comprise nitrogen. As the second source material, monosilane, BDEAS, DIPAS, BTBAS or the like can be used, and as the second reaction material, nitrogen (N ₂ ), ammonia (NH ₃ ) and the like can be used. When a CH group is added to the SiN _x layer, the flexibility of the buffer layer can be controlled to ensure extreme flexibility at the foldable level. A gas containing a CH group can be used for the addition of the CH group. Examples of the gas containing the CH group include BDEAS, HMDSO, HMDS, and ethane.

The second material layer may be the same SiO _x layer as the first material layer. The second source material and the second reactant material may be the same as the first source material and the first reactant material, and the second material layer may be formed by chemical vapor deposition (CVD) using the linear chemical vapor deposition source, . ≪ / RTI > When the CH group is added to the SiO _x layer, the flexibility of the buffer layer can be controlled to ensure extreme flexibility at the foldable level. A gas containing a CH group can be used for the addition of the CH group. Examples of the gas containing the CH group include BDEAS, HMDSO, HMDS, and ethane.

On the other hand, the ultra-thin film with the second material layer having a thickness of from 3 to there 200 Å be on the order of, the SiO _x layer and be about the SiN _x layer Å and about several tens of Å thickness as the barrier layer and the buffer layer is deposited on the organic electronic device When the multilayer film is vapor-deposited, excellent moisture permeation prevention efficiency and flexibility characteristics can be ensured.

According to another aspect of the present invention, there is provided a method of depositing a dense structure on a substrate, comprising the steps of: spraying a source material and a reactive material to react the source material and the reactant after reaching the substrate; It is possible to improve the moisture barrier property. And depositing the first material layer in the steps (a) to (c), and depositing the second material layer in the steps (d) to (f) The stacking order of the second material layers may be adjusted as needed.

Hereinafter, a hybrid sealing film deposition apparatus according to another embodiment of the present invention will be described in detail. In the hybrid membrane deposition apparatus and the composite membrane deposition method according to the embodiments of the present invention, Are omitted.

According to another aspect of the present invention, there is provided a hybrid seal film deposition apparatus including: a substrate support for supporting a substrate; A deposition module located on the substrate, the deposition module including a linear atomic layer deposition source and a linear chemical vapor deposition source arranged side by side in a first axis direction across the substrate; And a driving unit connected to the substrate support and reciprocating the substrate support in a second axis direction intersecting the first axis direction, wherein the linear atomic layer deposition source comprises a barrier layer source material nozzle located at the center, And a barrier layer reaction material nozzle arranged on both sides of the barrier layer source material nozzle in parallel in the first axis direction, wherein the linear chemical vapor deposition source comprises a buffer layer source material nozzle arranged adjacent to the barrier layer reaction material nozzle, And a buffer layer reaction material nozzle disposed in parallel with the buffer layer source material nozzle in the first axis direction.

Here, the linear atomic layer deposition source may include a barrier layer source material nozzle for spraying a barrier layer source material, and a barrier layer source material nozzle for spraying the barrier layer reaction material, And the linear chemical vapor deposition source is arranged such that the buffer layer for injecting the buffer layer reaction material is disposed between the buffer layer source material nozzle and the buffer layer source material nozzle for spraying the buffer layer source material, The nozzle and the buffer layer reaction material nozzle may be arranged side by side in the first axis direction.

In the present invention, the buffer layer source material nozzle is disposed on both sides of the buffer layer reaction material nozzle, the buffer layer source material is injected first and the buffer layer reaction material is injected after the barrier layer reaction material is injected, A source material layer made of a buffer layer source material and a reactive material layer made of a buffer layer reactant may be sequentially formed on the reactive material layer made of a material. When the buffer layer source material is injected again after the buffer layer reactant is sprayed, the sprayed barrier layer reactant may form a reactive material layer composed of the barrier layer reactant on the buffer layer. Both the source material nozzles and the source material and the reactants injected from the reactant nozzles can form a respective source material layer and reactant material layer.

The buffer layer reaction material nozzle may simultaneously spray at least any one of a buffer layer source material and an organic compound together with a buffer layer reaction material. The buffer layer source material and the organic compound may be used as an additive material, and the organic compound may include a gas containing a CH group. Here, when both the buffer layer source material and the organic compound are injected together with the buffer layer reactant, the buffer layer source material and the organic compound may be injected separately or simultaneously injected.

When at least one of the buffer layer source material and the organic compound is injected simultaneously with the buffer layer reaction material, the thickness of the buffer layer may be increased or the flexibility of the multi-layered film including the buffer layer may be increased. The flexibility of the multilayer film may be increased.

The linear chemical vapor deposition source may be a single nozzle for simultaneously spraying at least any one of the buffer layer source material and the organic compound together with the buffer layer reaction material.

The barrier layer source material and the barrier layer reactant may react with each other to deposit a barrier layer. The buffer layer source material may react with the buffer layer reactant to form a buffer layer. The barrier layer and the buffer layer may be alternately stacked. Whereby a sealing film for an organic electronic device can be formed. Meanwhile, a shadow mask may be used to define where the sealing film is to be deposited, and a moving stage of the substrate or the shadow mask for aligning the shadow mask and the substrate, and the adhesion and separation of the substrate and the shadow mask A camera device for checking the alignment state of the shadow mask and the substrate, and the like may be used.

As described above, in the present invention, the composite film of the first material layer and the second material layer is simply deposited in a single chamber using a deposition module in which a linear atomic layer deposition source and a linear chemical vapor deposition source are arranged in a first axis direction across the substrate It is possible to deposit a dense and stable composite film. In addition, since a plurality of source materials and a plurality of reaction materials are sprayed respectively and reacted after each source material and reactant reach the substrate, a dense structure film can be deposited on the substrate, and the moisture permeation prevention property of the film can be improved . In addition, the first reactive material can be supplied from both sides of the first source material to stably deposit the film, and the first source material nozzle can be prevented from being located at the outermost portion of the deposition module, It is also possible to prevent the deposition chamber from being contaminated due to a part of the source material. Meanwhile, the second source material is injected onto the substrate on which the first reactant is injected, so that the first reactant and the second reactant are not adsorbed, so that the second reactant layer is completely formed on the first reactant layer It is possible to solve the problem of affecting the deposition reaction thereafter. Further, the multilayer film of the barrier layer and the buffer layer can be easily deposited by reciprocating the substrate, and the additive material can be injected together with the second reactant material to increase the thickness of the buffer layer or improve the flexibility of the buffer layer. Further, the moving distance of the substrate or the deposition module can be reduced according to the arrangement structure of the linear atomic layer deposition source and the linear chemical vapor deposition source, and the length of the deposition chamber and the foot-print of the deposition equipment can be reduced . As a result, it is possible to reduce the manufacturing cost of the equipment and to secure the space of the clean room.

As used in the above description, the term " on " means not only a direct contact but also a case of being opposed to the upper or lower surface, It is also possible to position them facing each other, and they are used to mean facing away from each other or coming into direct contact with the upper or lower surface. Thus, " on substrate " may be the surface (upper surface or lower surface) of the substrate, or it may be the surface of the film deposited on the surface of the substrate.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be construed as limited to the embodiments set forth herein. Those skilled in the art will appreciate that various modifications and equivalent embodiments may be possible. Accordingly, the technical scope of the present invention should be defined by the following claims.

10: substrate 11: first source material (layer)
12: first reaction material (layer) 15: first material layer
21: second source material (layer) 22: second reaction material (layer)
25: second material layer 100: substrate support
200: deposition module 210: linear atomic layer deposition source
211: first source material nozzle 212: first reaction material nozzle
215: atomic layer deposition submodule 220: linear chemical vapor deposition source
221: second source material nozzle 222: second reaction material nozzle
300: driving unit 310: power source
320: Power transmission unit 330:

Claims (21)

A substrate support for supporting the substrate;
A deposition module located on the substrate, the deposition module including a linear atomic layer deposition source and a linear chemical vapor deposition source arranged side by side in a first axis direction across the substrate; And
And a driving unit connected to the substrate support or the deposition module to reciprocate the substrate support or the deposition module in a second axis direction intersecting the first axis direction,
Wherein the linear atomic layer deposition source comprises a first source material nozzle for injecting a first source material arranged side by side in the first axis direction and a first reaction material nozzle for injecting a first reaction material,
Wherein the linear chemical vapor deposition source includes a second source material nozzle for spraying a second source material arranged side by side in the first axis direction and a second reaction material nozzle for spraying a second reaction material.
The method according to claim 1,
Wherein the first source material nozzle is located between the first reaction material nozzles.
The method according to claim 1,
Wherein the linear chemical vapor deposition source has the second reaction material nozzle at a central portion of the linear chemical vapor deposition source and the second source material nozzle at both sides of the second reaction material nozzle.
The method according to claim 1,
Wherein the first source material comprises an organosilicon compound.
The method according to claim 1,
And the second reaction material nozzle ejects the second reaction material and the additive material together.
The method of claim 5,
Wherein the additive material comprises at least one of the second source material and the organic compound.
The method according to claim 1,
Wherein the linear atomic layer deposition source and the linear chemical vapor deposition source are alternately arranged in the deposition module.
The method according to claim 1,
The linear atomic layer deposition source includes a plurality of successively arranged atomic layer deposition submodules,
Wherein the atomic layer deposition submodule is symmetrically located on both sides of the linear chemical vapor deposition source in the deposition module.
The method of claim 8,
Wherein the atomic layer deposition submodule includes a plurality of linear atomic layer deposition sources arranged in a row, wherein one of the plurality of linear atomic layer deposition sources arranged successively has a first source material nozzle and a second reaction material nozzle, Wherein the number of reactant nozzles is one more.
The method according to claim 1,
Wherein the second source material and the second reactant are sprayed in an activated state by a plasma.
The method according to claim 1,
Wherein the linear atomic layer deposition source and the linear chemical vapor deposition source each deposit a first material layer and a second material layer,
Wherein the first material layer and the second material layer are a barrier layer and a buffer layer,
Wherein the laminated structure of the first material layer and the second material layer is a protective film formed on the organic electronic device.
(a) forming a first reactive material layer by spraying a first reactive material onto a substrate as a linear atomic layer deposition source;
(b) forming a first source material layer by sputtering a first source material reacting with the first source material as the linear atomic layer deposition source onto the first source material layer;
(c) forming the first reactive material layer by spraying the first reactive material onto the first source material layer as the linear atomic layer deposition source;
(d) forming a second source material layer on the substrate by spraying a second source material into a linear chemical vapor deposition source arranged side by side with the linear atomic layer deposition source;
(e) forming a second reactive material layer by spraying a second reactive material, which reacts with the second source material, onto the second source material layer as the linear chemical vapor deposition source; And
(f) forming the second source material layer by spraying the second source material onto the second source material layer as the linear chemical vapor deposition source,
Wherein the first source material and the first reactant react to deposit a first material layer,
Wherein the second source material and the second reactant react to deposit a second material layer.
The method of claim 12,
Further comprising alternating layers of the first material layer and the second material layer.
The method of claim 12,
Further comprising repeating the steps (a) and (b).
The method of claim 12,
Wherein the first source material comprises an organosilicon compound.
The method of claim 12,
And spraying the second reactive material to form a second reactive material layer, the second reactive material and the additive material are injected together.
18. The method of claim 16,
Wherein the additive material comprises at least one of the second source material and the organic compound.
The method of claim 12,
Wherein the second source material and the second reactant are sprayed in an activated state by a plasma.
The method of claim 12,
Wherein the first material layer is a barrier layer,
The second material layer is a buffer layer,
Wherein the first material layer and the second material layer are laminated to form a protective film for an organic electronic device.
A substrate support for supporting the substrate;
A deposition module located on the substrate, the deposition module including a linear atomic layer deposition source and a linear chemical vapor deposition source arranged side by side in a first axis direction across the substrate; And
And a driving unit connected to the substrate support and reciprocating the substrate support in a second axis direction intersecting the first axis direction,
Wherein the linear atomic layer deposition source comprises a barrier layer source material nozzle located at a central portion and a barrier layer reactive material nozzle arranged side by side in the first axis direction on both sides of the barrier layer source material nozzle,
Wherein the linear chemical vapor deposition source comprises a buffer layer source material nozzle disposed adjacent to the barrier layer reaction material nozzle and a buffer layer reaction material nozzle disposed in parallel with the buffer layer source material nozzle in the first axis direction, Deposition apparatus.
The method of claim 20,
Wherein the buffer layer reaction material nozzle simultaneously injects a buffer layer source material and / or an organic compound together with the buffer layer reaction material.

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