KR20160116239A - Darkfield illumination device - Google Patents

Darkfield illumination device Download PDF

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Publication number
KR20160116239A
KR20160116239A KR1020150043277A KR20150043277A KR20160116239A KR 20160116239 A KR20160116239 A KR 20160116239A KR 1020150043277 A KR1020150043277 A KR 1020150043277A KR 20150043277 A KR20150043277 A KR 20150043277A KR 20160116239 A KR20160116239 A KR 20160116239A
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South Korea
Prior art keywords
light source
light
detection rate
module
rotation angle
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KR1020150043277A
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Korean (ko)
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KR101785069B1 (en
Inventor
김병겸
신동욱
오승철
추승용
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(주)오로스 테크놀로지
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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V14/00—Controlling the distribution of the light emitted by adjustment of elements
    • F21V14/02—Controlling the distribution of the light emitted by adjustment of elements by movement of light sources
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S2/00—Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction
    • F21S2/005—Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction of modular construction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H05B37/02—
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21W—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO USES OR APPLICATIONS OF LIGHTING DEVICES OR SYSTEMS
    • F21W2131/00—Use or application of lighting devices or systems not provided for in codes F21W2102/00-F21W2121/00
    • F21W2131/40—Lighting for industrial, commercial, recreational or military use
    • F21W2131/403—Lighting for industrial, commercial, recreational or military use for machines
    • Y02B20/70—

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  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)

Abstract

A dark field illumination apparatus according to an embodiment of the present invention is a lighting apparatus for providing illumination light for defect inspection of a semiconductor component. The illumination apparatus includes a light source unit for irradiating a light source to detect defects, And a controller for controlling the rotation angle of the light source by controlling the movement of the light source according to the detection rate.

Description

[0001] The present invention relates to a darkfield illumination device,

The present invention relates to a dark field illumination apparatus, and more particularly, to a lighting apparatus applied to defect inspection of a component element and a device, and is implemented to provide an optimal DF (darkfield) illumination according to the characteristics of the inspection object And a lighting device.

Generally, in order to find defects such as foreign matter or stain remaining on a substrate when producing a substrate (hereinafter referred to as a "substrate") which is a flat panel display element such as a semiconductor wafer, a PCB, an LCD, a PDP, In the manufacturing line, an inspection process is performed after completion of a predetermined process. The substrate is irradiated with light, and the reflected light is visually observed, or the image is sensed by an image sensor and subjected to image processing. At this time, a lighting device that uniformly illuminates the entire substrate is used in order to easily find defects.

The surface of the semiconductor wafer is optimally flat. However, a small amount of residual roughness is inevitably present even on blank wafers. This stagger, which may be only 2 nm or less (i.e., much smaller than the wavelength of light used for inspection), may cause undesirable oscillation of the scattered light detected in the imaging sensor of the dark field inspection system. This fluctuation is characterized as a noise floor and is referred to herein as "speckle ".

For wafer inspection, the speckle is an effective limiting factor for the sensitivity of the imaging sensor. That is, small particles (e.g., defects) that may otherwise be detected may be masked by the speckle.

Conventional darkfield inspection methods, including edge-to-business card (EC) mode or laser darkfield inspection systems of broadband systems, have not been designed to overcome speckles. Unfortunately, the EC mode of a broadband system uses a low-brightness broadband light source, resulting in a low illumination level in the imaging sensor. In addition, the EC mode of the broadband system has an inherently limited numerical aperture effective for defect detection because the numerical aperture (NA) is used for both illumination and imaging. This limited NA results in a low optical resolution and a relatively low collection efficiency for scattered light.

Conventional laser dark field inspection systems, such as the Puma family of products available from KLA-Tencor, have a tilted light incidence, which produces a relatively large line width (e.g., of the order of 1 um) Lt; / RTI > In addition, conventional laser dark field inspection systems use a single illumination angle that results in strong spatial coherence. Strong spatial coherence can cause a relatively large level of roughness induction fluctuations (or speckles) that can affect the system's ultimate sensitivity to actual defects.

As a result, since the illumination device having directionality is used in the conventional illumination device, it is difficult to irradiate the light due to the shape difference due to the defective surface of the object, so that the image acquisition is deteriorated.

1 shows an example of a conventional defect inspection apparatus. As shown in the figure, a DF illumination module 10 and a BF illumination module 20 are provided in the inspection apparatus for wafer defect detection, respectively, to provide illumination light to the wafer surface, and the detection light (reflected light) And is incident on the detection module 30 through the plurality of optical systems 50. [

Since the conventional DF or BF illumination device applied to the defect inspection apparatus uses a single illumination angle, there is a limit to adaptively detecting defects according to various patterns on the wafer.

KR 10-2012-0098868 KR 10-2009-0040572 KR 10-0972425

SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a dark field illumination device capable of increasing the defect detection rate for a semiconductor component. Also, the present invention provides a dark field illumination device capable of adaptively adjusting the rotation angle of a light source according to a defect inspection object.

According to an aspect of the present invention, there is provided an illumination device for providing illumination light for defect inspection of a semiconductor component, the illumination device including a light source for irradiating a light source for detecting a defect, And a control unit for controlling the rotation angle of the light source by controlling the movement of the light source unit according to the detection rate.

As described above, according to the dark field illumination apparatus of the present invention, scattered light for defects to be inspected is increased in accordance with the angle of irradiation and angle of rotation of the light source, and scattered light is effectively removed from various defects such as scratches, It is possible to realize various favorable conditions for detecting defects.

1 is a view showing an example of a conventional defect inspection apparatus.
2 is a block diagram schematically illustrating the configuration of a dark field illumination apparatus according to an embodiment of the present invention;
3 is a view showing a specific structure of a light source unit according to an embodiment of the present invention.
4 is a view showing a layout of a dark field illumination device including a light source unit according to an embodiment of the present invention.
5 is a view showing irradiation angles of a dark field illumination device when a light source is incident;
6 is a perspective view of a dark field illumination apparatus according to an embodiment of the present invention.
7 is a side view and a plan view of a wafer as an example of an inspection object;
8 is a view showing a state in which a light source is irradiated onto a wafer.
9 is a graph of SNR representing the detection rate according to the present invention.
10 is a diagram showing various image photographs and SNR according to the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

In the following description of the embodiments of the present invention, descriptions of techniques which are well known in the technical field of the present invention and are not directly related to the present invention will be omitted. In addition, detailed description of components having substantially the same configuration and function will be omitted.

For the same reason, some of the elements in the accompanying drawings are exaggerated, omitted, or schematically shown, and the size of each element does not entirely reflect the actual size. Accordingly, the present invention is not limited by the relative size or spacing depicted in the accompanying drawings.

The dark field illumination apparatus according to the present invention can illuminate a light source by adjusting not only the irradiation angle of the light source apparatus but also the rotation angle in accordance with the analysis of the signal to noise ratio to thereby provide a dark field illumination Device as a main technical point.

In addition, the dark field illumination apparatus according to the present invention can freely control a polarization component, an incident angle, an optical size, an optical form, and especially a rotation angle of light with respect to a horizontal surface of the inspection object, It is possible to provide a dark field illumination device capable of providing illumination light.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, an embodiment of a dark field illumination apparatus according to the present invention will be described with reference to the drawings.

2 is a block diagram schematically illustrating a configuration of a dark field illumination apparatus according to an embodiment of the present invention.

Referring to FIG. 2, a dark field illumination apparatus according to the present invention includes a light source unit 1000 for irradiating a light source to detect a defect, An analysis unit 2000 for obtaining a detection rate of a detected defect by analyzing a scattered light beam and controlling the movement of the light source unit according to the detection rate to adjust a glancing angle and a rotation angle of the light source And a control unit (3000)

3 is a view showing a specific structure of a light source unit according to an embodiment of the present invention.

The light source of the illumination device according to the present invention does not use only UV or DUV, but a laser and a lamp of various wavelengths ranging from 200 nm to 2000 nm can be used as the source light source.

3, the light source unit 1000 includes an optical fiber 100 configured to transmit and receive light generated from a source light source in the form of a plurality of optical fiber bundles, a plurality of optical fibers 100 for controlling the shape of light output from the optical fiber, A polarizing module 300 for determining the polarization of the controlled light, and a polarizing module 300 for receiving the polarized light polarized in the polarizing module and measuring the size or shape of the light through the plurality of optical modes And a projection module (500) for inputting the illumination light output from the optical control module to an object to be inspected. In the present invention, the configuration of each module is described in a conceptual dimension for constituting a lighting device, and the scope of the right is protected. Detailed features of each module are disclosed in another application of the present applicant.

4 is a view illustrating a layout of a dark field illumination apparatus including a light source unit according to an embodiment of the present invention.

4, the light source unit 1000 includes two illumination devices 1100 and 1200 symmetrical to each other with respect to a central axis, and the two illumination devices 1100 and 1200 individually irradiate a light source to an object to be inspected . As a result, the amount of light can be increased, so that the detection capability for defects can be improved.

The light source unit 1000 can illuminate the light source obliquely at a predetermined angle with reference to the vertical line of the inspection object by the control unit 3000. As shown in FIG. 5, the irradiation angle is largely irradiated at 30 degrees, 15 degrees, and 13 degrees. The irradiation angle is an irradiation angle arbitrarily set on the basis of a general object to be inspected. Examples of the irradiation angle can be irradiated at various angles of 0 to 81 degrees for the entire irradiation angle.

4, the light source unit 1000 can be rotated by a predetermined angle on the horizontal surface of the inspection object by the control unit 3000. [ That is, the light source unit 1000 can rotate the magnitude of the rotation angle with respect to the horizontal plane of the inspection object according to the guide line from 0 degree to 45 degrees, and irradiate the inspection target with the light source. The rotation angle is an example of a rotation angle set based on a general inspection object and can be rotated at various angles ranging from 0 to 360 degrees in the case of the total rotation angle. On the other hand, the control unit 3000 can simultaneously adjust the irradiation angle and the rotation angle.

6 is a perspective view of a dark field illumination device of the present invention. Referring to FIG. 6, the scattered light for defects to be inspected is increased in accordance with the irradiation angle and the rotation angle of the dark field illumination device, and the scattered light is efficiently detected from various defects such as scratches present in the inspection object. Can be variously implemented.

For this, the analyzer 2000 obtains the detection rate of the detected defect by analyzing the light scattered from the object after the light source is irradiated, and the controller 3000 controls the light source 1000 according to the obtained detection rate, The glancing angle and the rotation angle of the light source are adjusted so as to be most suitable for the defect inspection object. Herein, the analysis unit 2000 may obtain the detection rate using the signal to noise ratio (RNR).

Specifically, the control unit 3000 analyzes a plurality of signal-to-noise ratios obtained according to light sources irradiated with different angles of rotation with respect to an object to be inspected, and performs a defect inspection using a rotation angle corresponding to a relatively high signal- .

7, impurities (Cr, Cu) are implanted into a test object having a SiO 2 insulating film stacked on a silicon (Si) wafer and a predetermined pattern formed of CaAS on the insulating film, If formed, the light source may be irradiated on the wafer at a predetermined rotation angle as shown in Fig. 8 to detect the impurities. At this time, the light source unit 1000 irradiates the light source to the wafer at different rotation angles under the control of the control unit 3000. The control unit 3000 extracts the rotation angle indicating the highest detection rate among the detection rates obtained by the analysis unit 2000 and intensively detects the impurities at the extracted rotation angle. 8 shows a case where the dark field light source is irradiated with impurities at a rotation angle of 45 degrees.

FIG. 9 is a graph of obtained SNR when the light source is irradiated to the wafer at different rotational angles as shown in FIG. 8, FIG. 10 is a graph showing the SNR obtained by irradiating the light source at different rotation angles with respect to the wafer, Contour image, 3D image and SNR value.

Referring to FIGS. 9 and 10, it can be seen that even for a wafer having the same impurity, the detection rate is different depending on the horizontal plane rotation angle of the light source irradiated thereto. 5, when a light source is irradiated on a wafer at a rotation angle parallel to the pattern formed on the wafer, the SNR is 24.06, and the wafer is irradiated with a light source at a rotation angle shifted by 45 degrees with respect to the pattern formed on the wafer , The SNR is 57.4, which is about twice the detection rate difference.

Since the light source can be irradiated in various directions and angles through the above-described method, it is possible to efficiently detect the shape difference caused by the defect between the gravels even when the gaps between the patterns are deep in the pattern formed on the wafer to be inspected.

In addition, the defect inspection apparatus of the present invention adjusts the rotation angle as well as the glancing angle of the light source adaptively according to different semiconductor patterns, thereby increasing the defect detection rate for the inspection object, The reliability of the inspection can be enhanced.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. , And are not intended to limit the scope of the present invention. It will be apparent to those skilled in the art that other modifications based on the technical idea of the present invention may be practiced without departing from the invention as set forth herein.

1000: light source part 2000: analysis part
3000:

Claims (8)

A lighting apparatus for providing illumination light for defect inspection of a semiconductor component,
A light source unit for irradiating a light source to detect defects;
An analyzer for obtaining a detection rate of a detected defect by analyzing a scattered light beam after the light source is irradiated; And
And a controller for controlling the rotation angle of the light source by controlling the movement of the light source according to the detection rate. The light source unit according to claim 1,
Wherein the light source moves in accordance with a guideline of 0 to 45 degrees on the horizontal surface of the object to be inspected. The light source unit according to claim 1,
Wherein the two illumination devices are provided with two illuminating devices symmetrical to each other with respect to a central axis, and the two illuminating devices illuminate the respective light sources. The apparatus according to claim 1,
Wherein the detection rate is obtained using the signal to noise ratio (RNR). 5. The apparatus of claim 4,
Wherein a plurality of signal-to-noise ratios obtained according to a light source irradiated with different angles of rotation are analyzed and defect inspection is performed using a rotation angle corresponding to a relatively high signal-to-noise ratio. The apparatus according to claim 1,
Wherein a defect image, a contour image, and a 3D image obtained through an image camera are used for the detection rate analysis. The apparatus of claim 1,
Wherein a rotation angle of the light source and a glancing angle of the light source are simultaneously controlled by controlling the movement of the light source according to the detection rate. The light source unit according to claim 1,
An optical fiber for providing illumination light for defect inspection;
A static module for generating light having an arbitrary shape through a plurality of optical systems and an aperture, the light emitted from the optical fiber;
A polarization module for selectively determining a polarization component of light emitted from the static module;
An optical control module for determining the size and shape of light having an arbitrary polarization component through the polarization module; And
Further comprising a projection module for projecting the illumination light output from the optical control module to an object to be inspected.














KR1020150043277A 2015-03-27 2015-03-27 Darkfield illumination device KR101785069B1 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117212736A (en) * 2023-11-09 2023-12-12 苏州高视半导体技术有限公司 Lighting device for semiconductor dark field detection and detection system

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090040572A (en) 2007-10-22 2009-04-27 세크론 주식회사 Illumination unit and apparatus for inspecting backside of wafer having the same
KR100972425B1 (en) 2007-06-03 2010-07-27 캠텍 리미티드 Multiple illumination path system and method for defect detection
KR20120098868A (en) 2009-12-16 2012-09-05 마이크론 테크놀로지, 인크 Gallium nitride wafer substrate for solid state lighting devices, and associated systems and methods

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4521240B2 (en) 2003-10-31 2010-08-11 株式会社日立ハイテクノロジーズ Defect observation method and apparatus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100972425B1 (en) 2007-06-03 2010-07-27 캠텍 리미티드 Multiple illumination path system and method for defect detection
KR20090040572A (en) 2007-10-22 2009-04-27 세크론 주식회사 Illumination unit and apparatus for inspecting backside of wafer having the same
KR20120098868A (en) 2009-12-16 2012-09-05 마이크론 테크놀로지, 인크 Gallium nitride wafer substrate for solid state lighting devices, and associated systems and methods

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117212736A (en) * 2023-11-09 2023-12-12 苏州高视半导体技术有限公司 Lighting device for semiconductor dark field detection and detection system
CN117212736B (en) * 2023-11-09 2024-01-23 苏州高视半导体技术有限公司 Lighting device for semiconductor dark field detection and detection system

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