KR20160109568A - Etchant composition and method for fabricating metal pattern - Google Patents
Etchant composition and method for fabricating metal pattern Download PDFInfo
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- KR20160109568A KR20160109568A KR1020150034252A KR20150034252A KR20160109568A KR 20160109568 A KR20160109568 A KR 20160109568A KR 1020150034252 A KR1020150034252 A KR 1020150034252A KR 20150034252 A KR20150034252 A KR 20150034252A KR 20160109568 A KR20160109568 A KR 20160109568A
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- molybdenum alloy
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- 239000000203 mixture Substances 0.000 title claims abstract description 39
- 238000000034 method Methods 0.000 title claims abstract description 30
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 17
- 239000002184 metal Substances 0.000 title claims abstract description 17
- 229910001182 Mo alloy Inorganic materials 0.000 claims abstract description 61
- 229910000838 Al alloy Inorganic materials 0.000 claims abstract description 33
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims abstract description 30
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims abstract description 30
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 27
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims abstract description 15
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 14
- 238000005530 etching Methods 0.000 claims description 37
- 239000000758 substrate Substances 0.000 claims description 11
- DTSBBUTWIOVIBV-UHFFFAOYSA-N molybdenum niobium Chemical compound [Nb].[Mo] DTSBBUTWIOVIBV-UHFFFAOYSA-N 0.000 claims description 9
- 239000004094 surface-active agent Substances 0.000 claims description 9
- UBSJOWMHLJZVDJ-UHFFFAOYSA-N aluminum neodymium Chemical compound [Al].[Nd] UBSJOWMHLJZVDJ-UHFFFAOYSA-N 0.000 claims description 6
- NXLSGYSTDQCZQM-UHFFFAOYSA-N [O-2].[Nb+5].[Mo+4] Chemical compound [O-2].[Nb+5].[Mo+4] NXLSGYSTDQCZQM-UHFFFAOYSA-N 0.000 claims description 5
- 230000007797 corrosion Effects 0.000 claims description 3
- 238000005260 corrosion Methods 0.000 claims description 3
- 239000003112 inhibitor Substances 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims description 3
- 239000004973 liquid crystal related substance Substances 0.000 claims description 3
- -1 molybdenum-niobium oxide nitride Chemical class 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 2
- 239000003352 sequestering agent Substances 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 10
- 230000000052 comparative effect Effects 0.000 description 19
- 229920002120 photoresistant polymer Polymers 0.000 description 12
- 239000000243 solution Substances 0.000 description 11
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 229910052750 molybdenum Inorganic materials 0.000 description 6
- 239000011733 molybdenum Substances 0.000 description 6
- 241000220259 Raphanus Species 0.000 description 5
- 239000000654 additive Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000008034 disappearance Effects 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- MKYBYDHXWVHEJW-UHFFFAOYSA-N N-[1-oxo-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propan-2-yl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(C(C)NC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 MKYBYDHXWVHEJW-UHFFFAOYSA-N 0.000 description 1
- 235000006140 Raphanus sativus var sativus Nutrition 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- LXFUCSMCVAEMCD-UHFFFAOYSA-N acetic acid;nitric acid;phosphoric acid Chemical compound CC(O)=O.O[N+]([O-])=O.OP(O)(O)=O LXFUCSMCVAEMCD-UHFFFAOYSA-N 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000002280 amphoteric surfactant Substances 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 239000003945 anionic surfactant Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002981 blocking agent Substances 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 239000003093 cationic surfactant Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007602 hot air drying Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000004148 unit process Methods 0.000 description 1
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/20—Acidic compositions for etching aluminium or alloys thereof
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/26—Acidic compositions for etching refractory metals
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/30—Acidic compositions for etching other metallic material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
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- ing And Chemical Polishing (AREA)
- Thin Film Transistor (AREA)
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
본 발명은 인산, 질산, 아세트산, 황산 및 물을 포함하는 알루미늄 합금 및 몰리브덴 합금을 포함하는 다층막의 식각액 조성물 및 이를 이용한 금속 패턴의 형성 방법에 관한 것이다.The present invention relates to a multilayer film etchant composition comprising an aluminum alloy and a molybdenum alloy containing phosphoric acid, nitric acid, acetic acid, sulfuric acid, and water, and a method of forming a metal pattern using the same.
TFT-LCD Array 제조에 있어 기판 위에 금속 배선을 형성하는 과정은 통상적으로 스퍼터링에 의한 금속막 형성공정, 포토레지스트 도포, 노광 및 현상에 의한 선택적인 영역에서의 포토레지스트 형성공정, 및 식각 공정에 의한 단계로 구성되고, 개별적인 단위 공정 전후의 세정 공정 등을 포함한다. 이러한 식각 공정은 포토레지스트 마스크를 사용하여 선택적인 영역에 금속막을 남기는 공정을 의미하며, 통상적으로 플라즈마 등을 이용한 건식 식각 또는 식각 용액을 사용하는 습식 식각이 사용된다. TFT-LCD의 배선재료로서 일반적으로 사용되는 금속은 알루미늄 또는 알루미늄 합금으로서, 순수한 알루미늄은 화학물질에 대한 내성이 약하고 후속 공정에서 배선 결합 문제를 야기할 수 있으므로 알루미늄 합금 형태로 사용되거나, 알루미늄 또는 알루미늄 합금 층 위에 또 다른 금속 층, 예컨대 몰리브덴, 크롬, 텅스텐, 주석 등의 금속층을 갖는 다층의 적층 구조가 적용될 수 있다.The process of forming a metal wiring on a substrate in the manufacture of a TFT-LCD array typically includes a metal film forming process by sputtering, a photoresist coating process, a photoresist forming process in an optional region by exposure and development, And includes a cleaning process before and after the individual unit process, and the like. This etching process refers to a process of leaving a metal film on a selective region by using a photoresist mask, and dry etching using plasma or wet etching using an etching solution is usually used. Aluminum or an aluminum alloy is generally used as a wiring material for a TFT-LCD. Pure aluminum is resistant to chemicals and may cause wire bonding problems in a subsequent process. Therefore, it may be used in the form of an aluminum alloy, Layer structure of a metal layer such as molybdenum, chromium, tungsten, tin or the like may be applied on the alloy layer.
예컨대, Mo/Al 이중막의 경우 통상 인산-주성분 알루미늄 식각액으로 식각할 수 있으나, 두 층간의 식각 속도 차이로 인하여 몰리브덴 오버행(overhang)이 발생하므로 후속공정으로 이러한 오버행을 건식 식각하는 것으로 알려져 있다.For example, in the case of a Mo / Al bilayer, molybdenum overhang occurs due to a difference in etch rate between two layers, although it is usually possible to etch with a phosphoric acid-based aluminum etchant.
이와 같이, TFT-LCD 등의 배선을 형성하기 위한 금속막을 다중 층 구조로 할 경우에는 습식 공정과 건식 공정을 함께 적용함으로써 서로의 단점을 보완하는 것이 일반적이다.In this manner, when the metal film for forming wirings such as TFT-LCD is formed into a multilayer structure, it is general to compensate for the disadvantages by applying the wet process and the dry process together.
Mo/Al 이중막을 종래 기술에 의한 알루미늄 식각액으로 습식 식각할 경우, 상부 몰리브덴 층의 식각 속도가 알루미늄 합금 층의 식각 속도보다 작기 때문에 상부 몰리브덴 층이 하부 Al 층의 외부로 돌출되는 단면을 갖게 되는 불량한 프로 파일이 나타난다. 이러한 불량한 프로파일로 인해 후속 공정에서 단차 커버리지(coverage)가 불량하게 되고 상부 층이 경사면에서 단선되든가 또는 상하부 금속 이 단락 될 확률이 커지게 된다. 이러한 경우, 1 차로 알루미늄 식각 용액으로 습식 식각하고, 2 차로 식각 속도의 차이로 인해 미처 식각 되지 못하고 하부 층 바깥으로 돌출된 상부 층을 다시 건식 식각하는 2 단계 공정을 적용하는 것이 일반적이나, 공정이 복잡하여 생산성 및 비용적인 측면에서 불리하며, 제품 손상 등의 문제점이 존재한다. 이러한 종래 기술에 대응하여, 본 출원인에 의해 출원된 특허출원 제 1999-0041119 호 (공개번호 제 2001-0028729 호) 는 인산-주성분 식각액을 개시하고 있으며, 인산, 질산 및 아세트산의 조성비를 특정하게 변화시킴으로써, 상부 몰리브덴 층이 하부 알루미늄 합금 층의 외부로 돌출되는 단면을 갖게 되는 불량 프로파일이 없어지고, 추가의 건식 식각이 필요하지 않을 정도로 우수한 프로파일을 수득할 수 있으므로, 2 단계 공정의 종래 기술에 비해 매우 간단하고 경제적으로 식각을 행할 수 있었다. When the Mo / Al bilayer is wet-etched with the aluminum etchant according to the prior art, since the etching rate of the upper molybdenum layer is smaller than the etching rate of the aluminum alloy layer, the upper molybdenum layer has a cross- The profile appears. This poor profile results in poor step coverage in the subsequent process, and the probability that the upper layer is disconnected at the slope or the upper and lower metals is short-circuited becomes larger. In this case, it is common to apply a two-step process of wet-etching firstly an aluminum etching solution and dry-etching the upper layer which is not etched due to a difference in etching rate in the second order and protruded outward from the lower layer, Which is disadvantageous in terms of productivity and cost, and there is a problem such as product damage. In response to this conventional technique, Patent Application No. 1999-0041119 (Laid-Open No. 2001-0028729) filed by the present applicant discloses a phosphoric acid-based component etchant, and it has a specific change in the composition ratio of phosphoric acid, nitric acid and acetic acid , There is no defect profile that the upper molybdenum layer has a section projecting to the outside of the lower aluminum alloy layer and an excellent profile can be obtained so that further dry etching is not required. The etching can be performed very simply and economically.
그러나, 금속막질의 형태가 알루미늄 또는 알루미늄 합금, 및/또는 몰리브덴 또는 몰리브덴 합금으로 이루어진 단일막 및 다층막 등 막질이 다양해지고 유리기판의 크기가 커짐에 따라 기존의 제품으로는 일괄 식각하는데 한계가 있으며 Tip이 발생하는 문제점이 있다.However, since the film quality of a metal film such as a single film and a multilayer film made of aluminum or an aluminum alloy and / or a molybdenum or a molybdenum alloy is increased and the size of a glass substrate is increased, There is a problem that this occurs.
본 발명은 상기와 같은 종래기술의 문제를 해결하기 위한 것으로서, 몰리브덴 합금막, 알루미늄 합금막, 몰리브덴 합금막 및 몰리브덴 합금 산화막이 순차적으로 적층된 다층막을 일괄적으로 식각할 수 있으며 포토레지스트 크랙 및 상부 몰리브덴 합금막의 Tip이 발생하지 않는 식각액 조성물을 제공하는 것을 목적으로 한다.SUMMARY OF THE INVENTION The present invention has been made to solve the problems of the conventional art as described above, and it is an object of the present invention to provide a multilayered multilayer film which is capable of collectively etching a multilayer film in which a molybdenum alloy film, an aluminum alloy film, a molybdenum alloy film and a molybdenum alloy oxide film are sequentially laminated, It is an object of the present invention to provide an etchant composition which does not cause the formation of a molybdenum alloy film tip.
본 발명은 인산 50 내지 70 중량%, 질산 6 내지 8 중량%, 아세트산 5 내지 25 중량%, 황산 2 내지 4 중량% 및 잔량의 물을 포함하고, 상기 질산 및 황산은 1.5 내지 2.5:1의 함량비로 포함되는 다층막 식각액 조성물을 제공하며, 상기 다층막은 몰리브덴 합금막, 알루미늄 합금막, 몰리브덴 합금막 및 몰리브덴 합금 산화막이 순차적으로 적층된 것일 수 있다.The present invention relates to an aqueous solution containing 50 to 70% by weight of phosphoric acid, 6 to 8% by weight of nitric acid, 5 to 25% by weight of acetic acid, 2 to 4% by weight of sulfuric acid and a residual amount of water, The multilayered film may be a multilayer film formed by sequentially laminating a molybdenum alloy film, an aluminum alloy film, a molybdenum alloy film, and a molybdenum alloy oxide film.
일 구현예는 몰리브덴 합금막이 몰리브덴-나이오븀(MoNb)막이며, 알루미늄 합금막은 알루미늄-네오디뮴(AlNd)막이고, 몰리브덴 합금 산화막은 몰리브덴-나이오븀산화막(MoNbO), 몰리브덴-나이오븀질화막(MoNbN) 및 몰리브덴-나이오븀산화질화막(MoNbOxNy)로 이루어진 군으로부터 선택되는 1종 이상인 것이며, 몰리브덴-나이오븀산화질화막(MoNbOxNy)의 x와 y의 합이 1인 것일 수 있다.In one embodiment, Wherein the molybdenum alloy film is a molybdenum-niobium film, the aluminum alloy film is an aluminum-neodymium (AlNd) film, and the molybdenum alloy oxide film is a molybdenum-niobium oxide film (MoNbO), a molybdenum-niobium nitride film (MoNbN) (MoNbOxNy), and the sum of x and y of the molybdenum-niobium oxide nitride film (MoNbOxNy) may be one.
다른 일 구현예는 다층막이 터치패널용 가교와이어(Bridge wire)로 사용되는 것일 수 있다.In another embodiment, the multilayer film may be used as a bridge wire for a touch panel.
또 다른 일 구현예는 식각액 조성물이 계면 활성제, 금속 이온 봉쇄제, 및 부식 방지제 중에서 하나 이상의 성분을 더 포함하는 것일 수 있다.Another embodiment may be that the etchant composition further comprises at least one of a surfactant, a sequestering agent, and a corrosion inhibitor.
또한, 본 발명은 기판 상에 알루미늄 합금 및 몰리브덴 합금을 포함하는 다층막을 형성하는 공정; 및 상기 공정에서 형성된 다층막을 상기 식각액 조성물을 사용하여 식각하는 공정을 포함하는 금속 패턴의 형성 방법을 제공한다.The present invention also provides a method of manufacturing a semiconductor device, comprising: forming a multilayer film including an aluminum alloy and a molybdenum alloy on a substrate; And etching the multilayer film formed in the process using the etchant composition.
일 구현예는 다층막이 몰리브덴 합금막, 알루미늄 합금막, 몰리브덴 합금막 및 몰리브덴 합금 산화막이 순차적으로 적층된 것일 수 있다.In one embodiment, the multilayer film may be a laminate of a molybdenum alloy film, an aluminum alloy film, a molybdenum alloy film, and a molybdenum alloy oxide film sequentially.
다른 일 구현예는 금속 패턴이 액정표시장치용 TFT 어레이 기판 상에 형성되는 것일 수 있다.Another embodiment may be that a metal pattern is formed on a TFT array substrate for a liquid crystal display.
본 발명의 식각액 조성물은 몰리브덴 합금막, 알루미늄 합금막, 몰리브덴 합금막 및 몰리브덴 합금 산화막이 순차적으로 적층된 다층막을 일괄적으로 식각할 수 있으며 PR 크랙 및 상부 몰리브덴 합금막의 Tip이 발생하지 않는 것이 특징이다.The etchant composition of the present invention can collectively etch a multilayered film in which a molybdenum alloy film, an aluminum alloy film, a molybdenum alloy film and a molybdenum alloy oxide film are sequentially laminated, and a PR crack and an upper molybdenum alloy film tip are not formed .
도 1은 실시예 1의 식각액 조성물로 식각한 다중막의 SEM 사진이다.
도 2는 비교예 1의 식각액 조성물로 식각한 다중막의 SEM 사진이다.
도 3은 비교예 2의 식각액 조성물로 식각한 다중막의 SEM 사진이다.
도 4은 비교예 3의 식각액 조성물로 식각한 다중막의 SEM 사진이다.
도 5은 비교예 4의 식각액 조성물로 식각한 다중막의 SEM 사진이다.1 is an SEM photograph of a multi-layer film etched with the etchant composition of Example 1. Fig.
2 is a SEM photograph of a multi-layer film etched with the etchant composition of Comparative Example 1. Fig.
3 is an SEM photograph of a multi-layer film etched with the etchant composition of Comparative Example 2. Fig.
4 is a SEM photograph of a multi-layer film etched with the etchant composition of Comparative Example 3. Fig.
5 is an SEM photograph of a multi-layer film etched with the etchant composition of Comparative Example 4. Fig.
본 발명은 인산, 질산, 아세트산, 황산 및 물을 포함하는 알루미늄 합금 및 몰리브덴 합금을 포함하는 다층막의 식각액 조성물 및 이를 이용한 금속 패턴의 형성 방법에 관한 것이다. 본 발명의 식각액 조성물은 특정 함량의 조성 및 특정 함량비의 질산과 황산을 포함함에 따라, 몰리브덴 합금막, 알루미늄 합금막, 몰리브덴 합금막 및 몰리브덴 합금 산화막이 순차적으로 적층된 다층막을 일괄적으로 식각할 수 있으며 PR 크랙 및 상부 몰리브덴 합금막의 Tip이 발생하지 않는 것이 특징이다.
The present invention relates to a multilayer film etchant composition comprising an aluminum alloy and a molybdenum alloy containing phosphoric acid, nitric acid, acetic acid, sulfuric acid, and water, and a method of forming a metal pattern using the same. The etchant composition of the present invention includes nitric acid and sulfuric acid in a specific composition and specific content ratio, and then the multilayer film in which a molybdenum alloy film, an aluminum alloy film, a molybdenum alloy film, and a molybdenum alloy oxide film are sequentially laminated is collectively etched And the tip of the PR crack and the upper molybdenum alloy film does not occur.
이하, 본 발명을 상세히 설명한다.Hereinafter, the present invention will be described in detail.
본 발명은 다층막 식각액 조성물에 있어서, 인산 50 내지 70 중량%, 질산 6 내지 8 중량%, 아세트산 5 내지 25 중량%, 황산 2 내지 4 중량% 및 잔량의 물을 포함하고, 상기 질산 및 황산은 1.5 내지 2.5:1의 함량비로 포함되며, 상기 다층막은 몰리브덴 합금막, 알루미늄 합금막, 몰리브덴 합금막 및 몰리브덴 합금 산화막이 순차적으로 적층된 다층막 식각액 조성물을 제공한다.The present invention provides a multi-layered etchant composition comprising 50 to 70% by weight of phosphoric acid, 6 to 8% by weight of nitric acid, 5 to 25% by weight of acetic acid, 2 to 4% by weight of sulfuric acid and residual water, To 2.5: 1, and the multilayer film is a multilayer film etchant composition comprising a molybdenum alloy film, an aluminum alloy film, a molybdenum alloy film, and a molybdenum alloy oxide film sequentially laminated.
상기 다층막은 터치패널용 가교와이어(Bridge wire)로 사용되는 것일 수 있다. 또한, 상기 다층막에 있어서, 몰리브덴 합금막은 몰리브덴-나이오븀(MoNb)막일 수 있으며, 알루미늄 합금막은 알루미늄-네오디뮴(AlNd)막일 수 있고, 몰리브덴 합금 산화막은 몰리브덴-나이오븀산화막(MoNbO), 몰리브덴-나이오븀질화막(MoNbNy) 및 몰리브덴-나이오븀산화질화막(MoNbOxN)로 이루어진 군으로부터 선택되는 1종 이상인 것일 수 있다. 상기 몰리브덴-나이오븀산화질화막(MoNbOxNy)의 x와 y의 합이 1일 수 있다.The multi-layered film may be used as a bridge wire for a touch panel. In the multilayered film, the molybdenum alloy film may be a molybdenum-niobium film, the aluminum alloy film may be an aluminum-neodymium (AlNd) film, the molybdenum alloy oxide film may be a molybdenum-niobium oxide film (MoNbO) (MoNbNy), and a molybdenum-niobium oxide (MoNbOxN) film. The sum of x and y of the molybdenum-niobium oxide nitride (MoNbOxNy) may be 1.
식각액 조성물에 있어서, 인산은 알루미늄 합금막을 산화시키는 역할을 하며 조성물의 총 중량에 대하여 50~70중량%로 함유된다. 인산 함량이 50중량% 미만일 경우 알루미늄 합금막의 식각 속도가 느려져 잔사가 생길 위험이 있으며 인산 함량이 70중량% 이상일 경우 알루미늄 합금막의 식각 속도가 너무 빨라 상대적으로 몰리브덴 합금막의 식각 속도가 느려지게 되어 몰리브덴 합금막의 Tip 발생이 크게 나타날 수 있다.In the etching solution composition, phosphoric acid serves to oxidize the aluminum alloy film and is contained in an amount of 50 to 70% by weight based on the total weight of the composition. When the content of phosphoric acid is less than 50% by weight, the etching rate of the aluminum alloy film becomes slow and there is a risk of residues. When the phosphoric acid content is 70% by weight or more, the etching rate of the aluminum alloy film is too fast, and the etching rate of the molybdenum alloy film is relatively slow. The occurrence of the tip of the film may be large.
식각액 조성물에 있어서, 질산은 알루미늄 합금막 및 몰리브덴 합금막의 표면을 산화 시키는 역할을 하며 조성물 총 중량에 대하여 6.0~8.0 중량%로 함유된다. 질산이 6.0 중량% 미만으로 함유되는 경우에는 몰리브덴 합금막 식각속도 저하가 발생되며, 이러한 현상으로 인해 몰리브덴 합금막의 Tip이 발생한다. 질산이 8.0 중량%를 초과하는 경우에는 포토레지스트에 크랙(Crack)이 발생하며, 그에 따르는 약액 침투에 의해 몰리브덴 합금막과 알루미늄 합금막이 단락 되는 현상이 발생할 수 있으며, 과식각에 의한 몰리브덴 합금막과 알루미늄 합금막의 소실로 인하여 가교 와이어 기능을 상실할 우려가 있다.In the etching solution composition, nitric acid serves to oxidize the surface of the aluminum alloy film and the molybdenum alloy film and is contained in an amount of 6.0 to 8.0% by weight based on the total weight of the composition. If the amount of nitric acid is less than 6.0 wt%, the etching rate of the molybdenum alloy film is lowered, and a tip of the molybdenum alloy film is formed due to such a phenomenon. When the amount of the nitric acid exceeds 8.0 wt%, cracks are generated in the photoresist, and thus the molybdenum alloy film and the aluminum alloy film may be short-circuited due to the penetration of the chemical solution, and the molybdenum alloy film There is a possibility that the crosslinked wire function is lost due to the disappearance of the aluminum alloy film.
상기 질산은 황산과 특정 함량비로 식각액에 포함되는데, 몰리브덴 합금막의 상부 Tip 제거를 위해 상기 질산 및 황산은 1.5 내지 2.5:1의 함량비로 포함되는 것이 바람직하다. The nitric acid is included in the etching solution at a specific content ratio with sulfuric acid. It is preferable that the nitric acid and sulfuric acid are contained at a content ratio of 1.5 to 2.5: 1 in order to remove the upper portion of the molybdenum alloy film.
식각액 조성물에 있어서, 아세트산은 인산의 점도를 낮추는 역할을 하며 조성물 총 중량에 대하여 5 내지 25 중량%로 포함된다. 상기 아세트산이 5 중량% 미만으로 포함되는 경우에는 인산의 점도가 높아져 균일한 식각 특성을 얻을 수 없으며, 상기 아세트산이 25 중량%를 초과하는 경우에는 인산의 점도가 낮아 식각 속도가 매우 느려지며, 알루미늄 합금막과 몰리브덴 합금막의 잔막이 남아 불량이 발생할 수 있다.In the etchant composition, the acetic acid serves to lower the viscosity of the phosphoric acid and is contained in an amount of 5 to 25% by weight based on the total weight of the composition. When the amount of acetic acid is less than 5% by weight, the viscosity of phosphoric acid becomes high and uniform etching properties can not be obtained. When the acetic acid is more than 25% by weight, the viscosity of phosphoric acid is low, The residual film of the alloy film and the molybdenum alloy film may remain, resulting in failure.
식각액 조성물에 있어서, 황산은 몰리브덴 합금막의 표면을 산화 시키는 역할을 하며 조성물 총 중량에 대하여 2.0~4.0 중량%로 함유된다. 황산이 2.0 중량% 미만으로 함유되는 경우에는 몰리브덴 합금막 식각속도 저하가 발생되며, 이러한 현상으로 인해 몰리브덴 합금막의 Tip이 발생한다. 황산이 4.0 중량%를 초과하는 경우에는 포토레지스트에 크랙(Crack)이 발생하며, 그에 따르는 약액 침투에 의해 몰리브덴 합금막과 알루미늄 합금막이 단락 되는 현상이 발생할 수 있으며, 과식각에 의한 몰리브덴 합금막과 알루미늄 합금막의 소실로 인하여 가교 와이어 기능을 상실할 우려가 있다.In the etching solution composition, sulfuric acid serves to oxidize the surface of the molybdenum alloy film and is contained in an amount of 2.0 to 4.0% by weight based on the total weight of the composition. If the sulfuric acid content is less than 2.0% by weight, the etching rate of the molybdenum alloy film is lowered. As a result, a molybdenum alloy film tip is formed. When the amount of sulfuric acid exceeds 4.0% by weight, cracks are generated in the photoresist, and thus the molybdenum alloy film and the aluminum alloy film may be short-circuited due to the penetration of the chemical solution, and the molybdenum alloy film There is a possibility that the crosslinked wire function is lost due to the disappearance of the aluminum alloy film.
식각액 조성물에 포함되는 물로는 탈이온수를 사용하는 것이 바람직하며, 상기 탈이온수는 반도체 공정용으로서 18㏁/㎝ 이상의 것을 사용하는 것이 바람직하다.It is preferable to use deionized water as the water contained in the etching solution composition, and it is preferable that the deionized water is used at a level of 18 M / cm or more for semiconductor processing.
본 발명에 따른 식각액 조성물에는 전술한 성분 이외에 통상의 첨가제를 더 첨가할 수 있으며, 첨가제로는 계면 활성제, 금속 이온 봉쇄제 및 부식 방지제 등을 사용할 수 있다.In the etchant composition according to the present invention, conventional additives may be further added in addition to the above-mentioned components. Surfactants, metal ion blocking agents, and corrosion inhibitors may be used as additives.
계면 활성제는 표면장력을 저하시켜 식각의 균일성을 증가시키는 역할을 한다. 이러한 계면 활성제로는 식각액에 견딜 수 있고 상용성이 있는 형태의 계면 활성제가 바람직하다. 그 예로는 임의의 음이온성, 양이온성, 양쪽 이온성 또는 비이온성 계면 활성제 등을 들 수 있다. 또한, 계면 활성제로서 불소계 계면 활성제를 사용할 수 있다.Surfactants decrease the surface tension and increase the uniformity of etching. As such a surfactant, a surfactant which is resistant to an etching solution and has compatibility with the surfactant is preferable. Examples thereof include any of anionic, cationic, amphoteric or nonionic surfactants and the like. Further, a fluorine-based surfactant can be used as a surfactant.
상기 첨가제는 이에만 한정되는 것이 아니라, 본 발명의 효과를 더욱 양호하게 하기 위하여, 당업계에 공지되어 있는 여러 다른 첨가제들을 선택하여 첨가할 수 있다.
The additive is not limited thereto, and various other additives known in the art can be selected and added for better effect of the present invention.
또한, 본 발명은 기판 상에 알루미늄 합금 및 몰리브덴 합금을 포함하는 다층막을 형성하는 공정; 및 상기 공정에서 형성된 다층막을 본 발명의 식각액 조성물을 사용하여 식각하는 공정을 포함하는 금속 패턴의 형성 방법을 제공한다.The present invention also provides a method of manufacturing a semiconductor device, comprising: forming a multilayer film including an aluminum alloy and a molybdenum alloy on a substrate; And a step of etching the multilayer film formed in the above process using the etching solution composition of the present invention.
본 발명의 바람직한 일 실시예에 따르면, 상기 다층막은 몰리브덴 합금막, 알루미늄 합금막, 몰리브덴 합금막 및 몰리브덴 합금 산화막이 순차적으로 적층된 것일 수 있다. 상기 금속 패턴의 형성 방법은 액정표시장치용 TFT 어레이 기판의 제조 분야 등에서 유용하게 사용될 수 있다.According to a preferred embodiment of the present invention, the multilayer film may be a laminate of a molybdenum alloy film, an aluminum alloy film, a molybdenum alloy film, and a molybdenum alloy oxide film sequentially. The method of forming the metal pattern may be usefully used in the field of manufacturing TFT array substrates for liquid crystal displays.
상기에서 식각액 조성물을 이용하여 다층막을 식각하는 공정은 당 기술분야에 알려져 있는 방법으로 수행할 수 있으며, 예컨대 침지, 흘리기 등의 방법이 있다. 식각 공정시의 온도는 예컨대 20 ~ 50 ℃, 바람직하게는 30 ~ 45 ℃로 할 수 있다. 그러나, 이 범위에 한정되지 않고 당 기술 분야에서 통상의 지식을 가진 자는 다른 공정 조건 및 요인에 의해 필요에 따라 적당한 식각 공정 조건을 정할 수 있다.The step of etching the multilayer film using the etching liquid composition may be performed by a method known in the art, for example, a method of immersion or shedding. The temperature during the etching process may be, for example, 20 to 50 占 폚, preferably 30 to 45 占 폚. However, the scope of the present invention is not limited to these ranges, and a person skilled in the art can determine appropriate etching process conditions as required by other process conditions and factors.
본 발명에 따른 식각액 조성물을 이용하여 금속막을 식각하는 경우, 대면적의 금속막 또는 다층의 금속막에 사용하는 경우에도 종래 습식-건식 2단계 식각 공정 대신에 1단계의 습식 식각 공정만으로도 균일한 식각 프로파일을 얻을 수 있으므로, 비용 및 생산성의 관점에서 매우 유리하다.
Even when the metal film is etched using the etchant composition according to the present invention for a large-area metal film or a multi-layer metal film, the conventional wet-dry two-step etching process can be replaced with a single- Since the profile can be obtained, it is very advantageous in terms of cost and productivity.
이하, 본 발명을 실시예, 비교예 및 실험예를 이용하여 더욱 상세하게 설명한다. 그러나 하기 실시예, 비교예 및 실험예는 본 발명을 예시하기 위한 것으로서, 본 발명은 하기 실시예, 비교예 및 실험예에 의해 한정되지 않고 다양하게 수정 및 변경될 수 있다.
Hereinafter, the present invention will be described in more detail with reference to Examples, Comparative Examples and Experimental Examples. However, the following examples, comparative examples and experimental examples are for illustrating the present invention, and the present invention is not limited by the following examples, comparative examples and experimental examples, and can be variously modified and changed.
실시예Example 1 및 1 and 비교예Comparative Example 1~4. 1-4. 식각액Etchant 조성물의 제조 Preparation of composition
하기 표 1의 성분 및 함량(단위: 중량%)에 따라 식각액 조성물을 제조하였다.The etchant composition was prepared according to the components and contents (unit: wt%) in Table 1 below.
실험예Experimental Example . . 식각Etching 특성 평가 Character rating
몰리브덴-나이오븀(Nb)/알루미늄합금/몰리브덴-나이오븀(Nb)/몰리브덴-나이오븀산화막(MoNbO)으로 이루어진 사중막 기판을 준비하였다. 분사식 식각 방식의 실험장비 (SEMES사 제조, 모델명:ETCHER(TFT)) 내에 실시예 또는 비교예에서 제조된 식각액을 넣고 온도를 40?로 세팅하여 가온 한 후, 온도가 40±0.5℃에 도달하면 식각 공정을 수행하였다. 오버에치(O/E: Over Etch)를 패드부분의 EPD(End Point Detection)를 기준으로 하여 30%를 주어 실시하였다. 기판을 넣고 분사를 시작하여 식각이 다 되면 꺼내어 탈이온수로 세정한 후, 열풍건조장치를 이용하여 건조하고, 포토 레지스트(PR) 박리기(stripper)를 이용하여 포토 레지스트를 제거하였다. 세정 및 건조 후 전자주사현미경 (SEM; HITACHI사 제조, 모델명: S-4700)을 이용하여 식각 프로파일을 경사각, MoNb Tip, 식각 잔류, PR Crack 등으로 평가하였고, 그 결과를 표 2, 도 1, 도 2, 도 3, 도 4 및 도 5에 나타내었다.A four-layered substrate consisting of molybdenum-niobium (Nb) / aluminum alloy / molybdenum-niobium (Nb) / molybdenum-niobium oxide (MoNbO) was prepared. The etchant prepared in the example or comparative example was placed in an experimental apparatus (SEMES, model name: ETCHER (TFT)) of a spray-type etch system, the temperature was set at 40 ° C and the temperature was raised to 40 ± 0.5 ° C The etching process was performed. The over etch (O / E: Over Etch) was applied at 30% based on EPD (End Point Detection) of the pad portion. After the substrate was inserted and the etching was started, the substrate was taken out when the etching was completed, washed with deionized water, dried using a hot air drying apparatus, and photoresist was removed using a photoresist (PR) stripper. After cleaning and drying, the etching profile was evaluated using an electron microscope (SEM; model: S-4700, manufactured by HITACHI Corporation) using an inclination angle, an MoNb Tip, an etching residue, a PR crack and the results are shown in Table 2, 2, 3, 4, and 5, respectively.
표 2, 도 1, 도 2, 도 3 및 도 4에 나타난 바와 같이, 실시예 1의 경우 몰리브덴 합금막의 Tip이 발생하지 않았지만, 비교예 1, 2, 3의 경우 몰리브덴 합금막의 Tip이 발생하였다. 또한, 비교예 4의 경우 PR 크랙이 발생하였다.As shown in Table 2, FIG. 1, FIG. 2, FIG. 3 and FIG. 4, the molybdenum alloy film tip did not occur in Example 1, but the molybdenum alloy film tip occurred in Comparative Examples 1, 2 and 3. In the case of Comparative Example 4, a PR crack occurred.
Claims (7)
인산 50 내지 70 중량%, 질산 6 내지 8 중량%, 아세트산 5 내지 25 중량%, 황산 2 내지 4 중량% 및 잔량의 물을 포함하고,
상기 질산 및 황산은 1.5 내지 2.5:1의 함량비로 포함되며,
상기 다층막은 몰리브덴 합금막, 알루미늄 합금막, 몰리브덴 합금막 및 몰리브덴 합금 산화막이 순차적으로 적층된 다층막 식각액 조성물.In the multilayer film etchant composition,
From 50 to 70% by weight of phosphoric acid, from 6 to 8% by weight of nitric acid, from 5 to 25% by weight of acetic acid, from 2 to 4% by weight of sulfuric acid,
Wherein the nitric acid and sulfuric acid are contained in a ratio of 1.5 to 2.5: 1,
Wherein the multilayer film is formed by sequentially laminating a molybdenum alloy film, an aluminum alloy film, a molybdenum alloy film, and a molybdenum alloy oxide film.
상기 몰리브덴 합금막은 몰리브덴-나이오븀(MoNb)막이며,
상기 알루미늄 합금막은 알루미늄-네오디뮴(AlNd)막이고,
상기 몰리브덴 합금 산화막은 몰리브덴-나이오븀산화막(MoNbO), 몰리브덴-나이오븀질화막(MoNbN) 및 몰리브덴-나이오븀산화질화막(MoNbOxNy)로 이루어진 군으로부터 선택되는 1종 이상인 것이며,
상기 몰리브덴-나이오븀산화질화막(MoNbOxNy)의 x와 y의 합이 1인 것을 특징으로 하는, 다층막 식각액 조성물.The method according to claim 1,
The molybdenum alloy film is a molybdenum-niobium (MoNb) film,
The aluminum alloy film is an aluminum-neodymium (AlNd) film,
The molybdenum alloy oxide film is a molybdenum-niobium oxide (MoNbO), molybdenum-niobium nitride (MoNbN) and molybdenum-niobium oxynitride film will at least one selected from the group consisting of (MoNbO x N y),
Wherein the sum of x and y of the molybdenum-niobium oxide nitride film (MoNbOxNy) is 1. The multilayer film etchant composition of claim 1,
상기 다층막은 터치패널용 가교와이어(Bridge wire)로 사용되는 것을 특징으로 하는 다층막 식각액 조성물.The method according to claim 1,
Wherein the multi-layered film is used as a bridge wire for a touch panel.
상기 식각액 조성물은 계면 활성제, 금속 이온 봉쇄제, 및 부식 방지제 중에서 하나 이상의 성분을 더 포함하는 것을 특징으로 하는 다층막 식각액 조성물.The method according to claim 1,
Wherein the etchant composition further comprises at least one of a surfactant, a sequestering agent, and a corrosion inhibitor.
상기 공정에서 형성된 다층막을 청구항 1의 식각액 조성물을 사용하여 식각하는 공정을 포함하는 금속 패턴의 형성 방법.Forming a multilayer film including an aluminum alloy and a molybdenum alloy on a substrate; And
And a step of etching the multilayer film formed in the above process by using the etching liquid composition of claim 1.
상기 다층막은 몰리브덴 합금막, 알루미늄 합금막, 몰리브덴 합금막 및 몰리브덴 합금 산화막이 순차적으로 적층된 것을 특징으로 하는 금속 패턴의 형성 방법.The method of claim 5,
Wherein the multilayered film is formed by sequentially laminating a molybdenum alloy film, an aluminum alloy film, a molybdenum alloy film, and a molybdenum alloy oxide film.
상기 금속 패턴이 액정표시장치용 TFT 어레이 기판 상에 형성되는 것을 특징으로 하는 금속 패턴의 형성 방법.The method of claim 5,
Wherein the metal pattern is formed on a TFT array substrate for a liquid crystal display device.
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| KR101393599B1 (en) * | 2007-09-18 | 2014-05-12 | 주식회사 동진쎄미켐 | Etchant composition for patterning circuits in thin film transistor-liquid crystal devices |
| KR20090061756A (en) * | 2007-12-12 | 2009-06-17 | 동우 화인켐 주식회사 | Etchant composition and method for fabricating metal pattern |
| KR20090081548A (en) * | 2008-01-24 | 2009-07-29 | 동우 화인켐 주식회사 | ETCHING COMPOSITION FOR Al THIN LAYER AND Mo THIN LAYER, AND METHOD FOR FABRICATING METAL PATTERN USING THE SAME |
| KR20110025378A (en) * | 2009-09-04 | 2011-03-10 | 오씨아이 주식회사 | Composition for etching metal layer |
| KR101766488B1 (en) * | 2011-12-15 | 2017-08-09 | 동우 화인켐 주식회사 | Etching solution composition for formation of metal line |
| KR20120052208A (en) * | 2012-04-05 | 2012-05-23 | 오씨아이 주식회사 | Composition for etching metal layer |
-
2015
- 2015-03-12 KR KR1020150034252A patent/KR20160109568A/en active Application Filing
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2016
- 2016-02-15 TW TW105104269A patent/TWI681076B/en active
- 2016-02-18 CN CN201610090986.5A patent/CN105970227A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20010028729A (en) | 1999-09-22 | 2001-04-06 | 한의섭 | Etching solution for Aluminium metal layer |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20190084444A (en) * | 2018-01-08 | 2019-07-17 | 동우 화인켐 주식회사 | Etchant composition for molybdenum-niobium alloy thin layer and manufacturing method for display |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201638391A (en) | 2016-11-01 |
| CN105970227A (en) | 2016-09-28 |
| TWI681076B (en) | 2020-01-01 |
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