KR20160098667A - Gate dirver circuirt and power supply apparatus - Google Patents
Gate dirver circuirt and power supply apparatus Download PDFInfo
- Publication number
- KR20160098667A KR20160098667A KR1020150020367A KR20150020367A KR20160098667A KR 20160098667 A KR20160098667 A KR 20160098667A KR 1020150020367 A KR1020150020367 A KR 1020150020367A KR 20150020367 A KR20150020367 A KR 20150020367A KR 20160098667 A KR20160098667 A KR 20160098667A
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- South Korea
- Prior art keywords
- gate
- resistance value
- switching
- switching element
- switch
- Prior art date
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
- H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
- H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
- H03K17/0416—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the output circuit
- H03K17/04163—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the output circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
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- Power Conversion In General (AREA)
Abstract
Description
The following embodiments relate to a gate drive circuit, particularly to a gate drive circuit capable of optimally operating a high-speed power semiconductor device.
Power products are being developed for high density and high efficiency, and internal switching frequency is getting higher especially for high density power products.
This is because the size of a magnetic element such as an inductor (Inductor) and a transformer used in a power product through a high switching frequency, a DC-Link, and an output stage capacitor can be simultaneously reduced.
However, as the switching frequency increases, electromagnetic interference (EMI) noise increases at the same time. To solve this problem, a complicated EMI reduction circuit is added and EMI filters (for example, EMI Inductors and EMI capacitors) It is difficult to increase the densification of the electric power product through the frequency.
Embodiments relate to a gate drive circuit and a voltage supply device for optimally operating a switching element.
The gate driving circuit according to the embodiment includes a gate resistance portion for varying the gate resistance value of the switching element and a gate drive control portion for controlling the variation of the gate resistance value.
At this time, the gate resistance portion is connected in parallel with the resistor and the switch, and the switch can be controlled by the gate drive control portion.
At this time, the gate drive control unit may vary the gate resistance value in consideration of the switching loss and the reverse recovery characteristic of the switching device.
At this time, the gate drive control section can control the switch to variably control the gate on resistance value and the gate off resistance value.
At this time, the gate drive control unit can vary the gate on resistance value by modulating the switch on / off during the time that the gate on voltage is applied.
The gate drive circuit according to the embodiment can be applied to a converter that converts a first power supply to a second power supply, a power supply device that supplies power to the load, a power product, and the like. Where the gate drive circuit is used, It does not.
According to these embodiments, the gate drive circuit is used to vary the gate resistance value of the switching element during operation, thereby optimizing the switching loss and reverse recovery characteristic, thereby optimally operating the high-speed power semiconductor element.
1 shows an example of a Totem-Pole Bridgeless PFC Boost converter circuit.
FIG. 2 shows an example of a switching waveform of the QB1 switching device shown in FIG.
3 shows a gate drive circuit according to an embodiment.
4 is a waveform diagram of an example for explaining the gate resistance variable.
5 is a waveform diagram of another example for explaining the gate resistance value variation.
6 shows a configuration of an embodiment of a power supply to which a gate drive circuit is applied.
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, it is not limited or limited by the following embodiments. In addition, the same reference numerals shown in the drawings denote the same members.
Embodiments provide a gate drive circuit capable of optimally operating a switching element by varying a gate resistance value so that the switching element has an equivalent gate resistance value during operation.
The gate driving circuit can vary the gate resistance value in consideration of the switching loss and the reverse recovery characteristic so as to optimally operate the switching element or the semiconductor element for high speed power. / Off < / RTI >
Therefore, it is possible to have an equivalent gate resistance value during operation through the control of the gate resistance value by the gate driving circuit according to the embodiment, and through this, the gate driving voltage, the operation switching frequency of the semiconductor device for high- / It is always possible to provide optimized gate drive characteristics even with parameter changes.
Further, the gate drive circuit according to the embodiment can be applied to a high-frequency power product, and can be applied to various power circuit applications using a gate drive circuit, for example, a converter, a power supply device, and the like.
The PFC (Power Factor Correction) circuit is applied to an AC-DC converter circuit including a power product for a server. The PFC circuit is composed of a diode bridge rectifier and a boost circuit.
At this time, the PFC circuit may remove the diode bridge rectifier for high Titanium efficiency (> 96% at 50% Load), and the Totem-Pole Bridgeless PFC circuit among the Bridgeless PFC circuits with the diode bridge rectifier removed, Can be applied to various high efficiency power products because it can realize the smallest conduction loss.
1 shows an example of a Totem-Pole Bridgeless PFC Boost converter circuit.
Referring to FIG. 1, the converter circuit can supply power to the load R 0 through on / off control of switching elements QB1 and QB2 using a gate driving circuit (not shown). When QB1 is on, QB2 Off state, and QB2 is in an on state when QB1 is off.
At this time, the converter circuit may have a predetermined dead-time between the on-time of QB1 and the on-time of QB2 to prevent the QB1 and QB2 from turning on at the same time.
The converter circuit has a negative cycle in which QB1 is turned off and a negative cycle in which QB2 transitions from an off state to an on state, a positive cycle in which QB2 is turned off and QB1 is turned off, Lt; / RTI >
The switching devices QB1 and QB2 may operate as freewheeling diodes, and the switching devices QB1 and QB2 may be GaN (Gallium Nitride) switching devices. Such a GaN switching device has a very low reverse recovery charge and a small switching loss.
A high-speed / high-efficiency power semiconductor device such as a GaN switching device can be applied to high-efficiency power products having a switching frequency in the MHz range. Since a GaN semiconductor can obtain a breakdown voltage characteristic that is 10 times or more higher than that of Si, The device size can be reduced in comparison with the Si semiconductor based power semiconductor. In addition, GaN semiconductors have high electron saturation rate and the switching time of devices is less than several ns, which is one fifth lower than that of Si power semiconductors, thus enabling miniaturization and high efficiency of switching power products.
GaN power semiconductor devices can be applied to applications such as IT, household appliances, industrial use, and automotive applications. In particular, they can be applied to power products for servers requiring high power density and high efficiency.
Of course, the switching elements QB1 and QB2 shown in FIG. 1 do not necessarily have to be GaN switching elements, and the types of switching elements may vary depending on the situation.
As can be seen from the switching waveform of the QB1 switching device shown in FIG. 2, the switching circuit reduces the switching loss and increases the efficiency as the gate resistance value Rg connected in series to the gate of the switching device decreases. Of course, if the switching element is a GaN switching element, if the gate resistance value Rg is reduced too much, dVds / dt may be greatly increased due to a small input capacitance Ciss of the GaN switching element, which may deteriorate the reverse recovery characteristic. Therefore, it is very important to select the gate resistance value (Rg) that optimizes switching loss and reverse recovery characteristics.
The gate drive circuit according to the embodiments varies the gate resistance value Rg in order to optimize the switching loss and the reverse recovery characteristic, which will be described with reference to Figs. 3 to 5. Fig.
3 shows a gate drive circuit according to an embodiment.
Referring to FIG. 3, the
The
The resistor Rg may have a reference resistance value capable of optimizing the operation of the
The resistance value of the resistor Rg may be determined in consideration of the field to which the gate drive circuit is applied, the characteristics of the switching device to be driven, and the like, and the value thereof may be determined by the provider providing the gate drive circuit.
The switch Sg is on / off controlled by a gate resistance modulation signal received from the gate
At this time, the switch Sg is turned on during the switching-on time (turn-on operation period) during which the
The switch Sg may also receive a switching control signal that bypasses the resistor Rg during the switching off time and may receive a switching control signal that may be operated in a linear operating mode, The gate off resistance value may be set to have a constant resistance value other than zero. Of course, the gate off resistance value in the turn-off operation period can be predetermined.
As described above, the
The gate
At this time, the gate
Further, the gate
The gate
The gate
The gate
The gate
As shown in FIG. 4, the gate
That is, the gate
The duty at which the switch Sg is turned on / off may vary depending on the gate on resistance value to be varied. Of course, the ON / OFF periods of the switches Sg may be the same or different, and their duty may be the same or different.
Here, the variable gate on resistance value may be determined by the duty of the first on / off time in the turn-on operation period (gate signal ON), so that the switch Sg is turned on for the first time in the turn- It is important to determine the duty of the signal to be turned off.
The gate
The gate
5, the gate
Here, the variable gate on resistance value may vary according to the duty of the single pulse, that is, the value of T1.
That is, the gate
The gate
Of course, the gate
The first switching device M 1 and the second switching device M 2 are connected in a cascade structure in the
In this case, the first switching device M1 may be a GaN switching device, and the second switching device M2 may include both GaN switching devices and Si MOSFET switching devices.
Of course, the first switching device M1 does not necessarily have to be a GaN switching device, and may be a Si MOSFET switching device depending on the application to which it is applied.
In addition, the
In this way, the gate driving circuit according to the embodiment optimizes the switching loss and the reverse recovery characteristic of the switching device by varying the gate resistance value of the switching device in consideration of the switching loss and the reverse recovery characteristic of the switching device, It is possible to optimally operate the high-speed power semiconductor device.
In addition, the gate driving circuit according to the embodiment can have an equivalent gate resistance value during operation through control of the gate resistance value, and the gate driving voltage, the operation switching frequency of the semiconductor device for high-speed power, It is possible to always provide optimized gate drive characteristics even with parameter changes.
Further, the gate drive circuit according to the embodiment can be applied to a high-frequency power product, and can be applied to various power circuit applications using a gate drive circuit, for example, a converter, a power supply device, and the like.
6 shows a configuration of an embodiment of a power supply to which a gate drive circuit is applied.
Referring to FIG. 6, the
The
At this time, the
For example, the
The switching
Here, the switching
Further, the switching
In this case, the first switching element may be a GaN switching element, may be directly connected to the gate driving circuit, and the second switching element may be a GaN switching element or a Si MOSFET switching element.
The
At this time, the
The gate resistance section includes a resistor Rg having a predetermined resistance value and a switch Sg connected in parallel to the resistor Rg and being controlled on / off by control by the gate drive control section. The on / The gate resistance value of the switching element is varied.
The resistor Rg may have a reference resistance value capable of optimizing the operation of the switching element under the control of the gate drive control section.
The resistance value of the resistor Rg may be determined in consideration of the field to which the gate drive circuit is applied, characteristics of the switching device to be driven, and the like.
The switch Sg is controlled on / off by a gate resistance modulation signal received from the gate drive control unit to vary the gate resistance value, and the switching control signal and the turn-off operation received in the turn- The switching control signal received in the interval may be different.
At this time, the switch Sg may receive a switching control signal that bypasses the resistor Rg in the turn-off operation period, and may receive a switching control signal that may be operated in a linear operation mode . Of course, when the switch Sg is operated in the linear operation mode in the turn-off operation period, the gate off resistance value may have a constant resistance value other than zero.
The gate control driver generates a gate resistance modulation signal based on the control information received from the
At this time, the gate control driver may generate a switching control signal corresponding to the gate resistance value included in the control information, determine the gate resistance value corresponding to the power efficiency information using the power efficiency information included in the control information And may generate a switching control signal corresponding to the determined gate resistance value.
Furthermore, the gate control driver may determine the gate resistance value to be varied by reflecting at least one of the switching loss and the reverse recovery characteristic of the switching element as well as the control information.
The gate control driver generates a first switching control signal corresponding to the gate on resistance value determined based on the control information and a second switching control signal corresponding to the gate off resistance value and outputs the generated first switching control signal and the second By controlling the switch Sg using the switching control signal, the gate resistance value can be varied.
At this time, the gate drive control unit may generate a second switching control signal for turning on the switch Sg to bypass the resistor Rg in the turn-off operation period, and the switch Sg may operate in the linear operation mode A second switching control signal may be generated.
The gate drive control unit may vary the gate resistance to the gate on resistance value by controlling the switch Sg on and off in a constant period unit in the turn-on operation period, It may be varied to an on resistance value.
For example, the gate drive control unit may vary the gate resistance value in the turn-on period to a predetermined gate-on resistance value by controlling the switch Sg on and off in a constant period unit in the turn-on operation period, Thus, the switching device can be driven with the switching loss and the reverse recovery characteristic of the switching device optimized.
In this case, the duty at which the switch Sg is turned on / off may be varied depending on the gate on resistance value to be varied, and the gate on resistance value may be varied depending on the duty of the first on / off state in the turn- May be determined.
In another example, the gate drive control unit may turn on / off the switch Sg once using the first switching control signal in the turn-on operation period, thereby changing the gate resistance value in the turn-on period to a predetermined gate on resistance Value. ≪ / RTI >
In this case, the variable gate on resistance value may vary depending on the duty value of the single pulse. That is, the gate drive control unit determines the duty value corresponding to the determined gate on resistance value, and controls the switch Sg in the turn-on operation period by using the first switching control signal including the determined duty value, Value to the gate on resistance value.
While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. For example, it is to be understood that the techniques described may be performed in a different order than the described methods, and / or that components of the described systems, structures, devices, circuits, Lt; / RTI > or equivalents, even if it is replaced or replaced.
Therefore, other implementations, other embodiments, and equivalents to the claims are also within the scope of the following claims.
Claims (16)
A gate drive control section for generating the switching control signal corresponding to a predetermined first gate resistance value and controlling the first switch using the generated switching control signal so that the gate resistance value becomes the first gate resistance value,
And a gate driving circuit.
The gate drive control unit
Wherein the first gate resistance value is determined in consideration of at least one of a switching loss and a reverse recovery characteristic of the switching element and the switching control signal corresponding to the first gate resistance value is generated Gate drive circuit.
The gate drive control unit
And the gate resistance value is varied to a predetermined gate on resistance value by controlling on / off of the first switch during a turn-on time when the gate-on voltage is applied to the switching element.
The gate drive control unit
And turns on the first switch during the first time of the on time and turns off the first switch during the remaining time of the on time.
The gate drive control unit
And determines the first time based on the gate on resistance value.
The gate drive control unit
And generates the switching control signal for repeatedly turning on / off the first switch during the ON-time.
The gate drive control unit
And turns off the first switch or operates in a linear operation mode during an off time when the gate-off voltage is applied to the switching element.
The switching element
GaN < / RTI > switching element.
A control unit for generating control information for controlling a gate resistance value of the switching device; And
A gate driving circuit for on / off controlling the switching element
Lt; / RTI >
The gate driving circuit
A gate resistance portion including a resistor connected in parallel and a first switch, and varying a gate resistance value of the switching element by ON / OFF control of the first switch; And
A gate drive control section for generating the switching control signal corresponding to the control information and controlling the first switch by using the generated switching control signal so that the gate resistance value of the switching element becomes a predetermined first gate resistance value,
≪ / RTI >
The control unit
And generates the control information based on the input power and the output power of the power supply device.
The gate driving circuit
Wherein said control circuit determines said first gate resistance value based on said control information and generates said switching control signal corresponding to said first gate resistance value.
The gate driving circuit
Wherein the first gate resistance value is determined by further reflecting at least one of a switching loss and a reverse recovery characteristic of the switching device.
The gate driving circuit
Wherein the first switch is turned on / off while the gate-on voltage is applied to the switching element to vary the gate resistance value to a predetermined gate-on resistance value.
The gate driving circuit
And turns off the first switch or operates in a linear operation mode during an off time when the gate-off voltage is applied to the switching element.
The switching element
A first switching element directly connected to the gate driving circuit, and a second switching element connected to the first switching element in a cascade structure.
The first switching element
Lt; RTI ID = 0.0 > GaN < / RTI >
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020150020367A KR20160098667A (en) | 2015-02-10 | 2015-02-10 | Gate dirver circuirt and power supply apparatus |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020150020367A KR20160098667A (en) | 2015-02-10 | 2015-02-10 | Gate dirver circuirt and power supply apparatus |
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| KR20160098667A true KR20160098667A (en) | 2016-08-19 |
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| KR1020150020367A KR20160098667A (en) | 2015-02-10 | 2015-02-10 | Gate dirver circuirt and power supply apparatus |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20180069209A (en) * | 2016-12-14 | 2018-06-25 | 현대자동차주식회사 | Apparatus of controlling converter |
| WO2021071024A1 (en) * | 2019-10-07 | 2021-04-15 | 삼성디스플레이 주식회사 | Display device comprising module support part and method for manufacturing module support part |
-
2015
- 2015-02-10 KR KR1020150020367A patent/KR20160098667A/en active IP Right Grant
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20180069209A (en) * | 2016-12-14 | 2018-06-25 | 현대자동차주식회사 | Apparatus of controlling converter |
| WO2021071024A1 (en) * | 2019-10-07 | 2021-04-15 | 삼성디스플레이 주식회사 | Display device comprising module support part and method for manufacturing module support part |
| US11940849B2 (en) | 2019-10-07 | 2024-03-26 | Samsung Display Co., Ltd. | Display device including module support and method for manufacturing module support |
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