KR20160073777A - Composition for forming silica based layer, silica based layer, and electronic device - Google Patents

Abstract

The present invention relates to a composition for forming a silica-based membrane, including a silicon-containing polymer and a solvent, wherein the weight-average molecular weight of the silicon-containing polymer is greater than 5,000 and less than or equal to 160,000. More specifically, the present invention relates to a composition for forming a silica-based membrane including 0.10-5.00 ppm of chlorine ions.

Description

TECHNICAL FIELD [0001] The present invention relates to a composition for forming a silica-based film, a silica-based film, and an electronic device,

The present invention relates to an electronic device comprising a composition for forming a silica-based film, a silica-based film, and the silica-based film.

As semiconductor technology advances, researches on highly integrated and high-speed semiconductor memory cells with improved integration and higher performance in smaller-sized semiconductor chips are being continued. However, as the spacing between the wirings narrows in accordance with the demand for high integration of semiconductors, RC delay, cross-talk, response speed degradation, etc. may occur, which may cause problems in terms of semiconductor interconnection. Proper separation between devices is needed to solve this problem.

Accordingly, a silica-based film formed of a silicon-containing material is widely used as an interlayer insulating film, a planarizing film, a passivation film, an interdevice separating insulating film, and the like of semiconductor devices for proper separation between devices. The silica-based film is used not only for a semiconductor device but also as a protective film or an insulating film for a display device or the like. For example, Korean Patent Laid-Open Publication No. 2002-0025680 discloses a semiconductor device to which a silicon nitride film is applied, and Korean Patent Publication No. 2005-0104610 discloses a display device to which an insulating film which is a silicon layer is applied.

On the other hand, a polymer such as polysiloxazane or polysilazane is oxidized through a heat treatment process and converted into a silica film. At this time, the film density and the film shrinkage ratio of the silica film are closely related to the reliability of the device. It is important to minimize.

One embodiment provides a composition for forming a silica-based film having excellent film density characteristics and capable of minimizing occurrence of film stress.

Another embodiment provides a silica-based film using the composition for forming a silica-based film.

Another embodiment provides an electronic device comprising the silica-based film.

According to one embodiment, there is provided a composition for forming a silica-based film comprising a silicon-containing polymer and a solvent, wherein the silicon-containing polymer has a weight average molecular weight of more than 5,000 but not more than 160,000, and 0.10 ppm to 5.00 ppm Based film-forming composition.

Specifically, the weight average molecular weight of the silicon-containing polymer may be more than 5,000 but not more than 70,000.

The polydispersity index (PDI) of the weight average molecular weight of the silicon-containing polymer may be 1.5 to 6.0.

The silicon-containing polymer may include polysilazane, polysiloxazane, or combinations thereof.

The composition for forming a silica-based film may further comprise a chlorine-containing catalyst.

The chlorine containing catalyst may comprise ammonium chloride, perchloric acid, chloric acid, chlorous acid, hypochlorous acid, chlorine gas, hydrochloric acid, or combinations thereof.

The solvent is selected from the group consisting of benzene, toluene, xylene, ethylbenzene, diethylbenzene, trimethylbenzene, triethylbenzene, cyclohexane, cyclohexene, decahydronaphthalene, dipentene, pentane, hexane, heptane, At least one selected from the group consisting of ethyl cyclohexane, methyl cyclohexane, cyclohexane, cyclohexene, p-menthane, dipropyl ether, dibutyl ether, anisole, butyl acetate, amyl acetate, methyl isobutyl ketone, . ≪ / RTI >

The silicon-containing polymer may be contained in an amount of 0.1 to 30% by weight based on the total amount of the composition for forming a silica-based film.

The silicon-containing polymer may include hydrogenated polysilazane, hydrogenated polysiloxazane, or combinations thereof.

The oxygen content of the silicon-containing polymer is 0.2 wt% to 3 wt% with respect to 100 wt% of the silicon-containing polymer, and the content of -SiH ₃ group of the silicon-containing polymer is a total of Si-H bonds And may be from 15% to 40% with respect to the content.

According to another embodiment, there is provided a silica-based film produced by using the above-mentioned composition for forming a silica-based film.

According to another embodiment, there is provided an electronic device comprising the above-mentioned silica-based film.

It is possible to provide a silica-based film having excellent film density and minimized film stress.

FIGS. 1 to 9 are cross-sectional views sequentially illustrating a method of manufacturing a semiconductor capacitor according to an embodiment of the present invention.

Hereinafter, exemplary embodiments of the present invention will be described in detail so that those skilled in the art can easily carry out the present invention. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.

Hereinafter, the composition for forming a silica-based film according to one embodiment will be described.

The composition for forming a silica-based film according to an embodiment includes a silicon-containing polymer and a solvent.

The silicon-containing polymer is not particularly limited as long as it is a polymer containing silicon (Si) atoms, and may include, for example, polysilazane, polysiloxazane, or a combination thereof.

The silicon-containing polymer has a weight average molecular weight of more than 5,000 and not more than 160,000. However, a silicon-containing polymer having a weight average molecular weight of more than 5,000 and not more than 160,000 may be mixed with a silicon-containing polymer having a weight-average molecular weight of 20,000 to 160,000.

For example, the silicon-containing polymer may be a hydrogenated polysiloxazane or a hydrogenated polysilazane, wherein the hydrogenated polysiloxazane or hydrogenated polysilazane has an oxygen content of less than 0.2 wt% based on 100 wt% of the hydrogenated polysiloxazane or hydrogenated polysilazane, To 3% by weight.

When it is contained in the above-mentioned range, shrinkage can be prevented during heat treatment, and cracks can be prevented from being generated in the filling pattern formed. More specifically 0.4 to 2% by weight.

Further, the hydrogenated polysiloxazane or hydrogenated polysilazane may have -SiH ₃ And may be contained in an amount of 15 to 40% by weight based on the total amount of Si-H bonds in the hydrogenated polysiloxazane or the hydrogenated polysilazane. In this specification, the oxygen content is measured using FlashEA 1112 (manufactured by Thermo Fisher Scientific Inc.), and SiH ₃ / SiH is measured using proton NMR: Advance-300 (manufactured by Bruker) at 300 MHz.

For example, the polydispersity index (PDI) of the silicon-containing polymer may be 1.5 to 6.0.

On the other hand, the composition for forming a silica-based film contains chlorine ions, and the content thereof is within the range of 0.10 ppm to 5.00 ppm with respect to the whole composition.

Hydrogenated polysiloxazanes or hydrogenated polysilazanes can also be converted to silica membranes by a low temperature oxidation reaction, where properties on film density and shrinkage are important. Particularly in processes such as flash memory substrates or IMDs, low temperature curing is particularly required. At this time, when chlorine ions are added to the hydrogenated polysiloxazane or hydrogenated polysilazane in a predetermined amount, it is possible to rapidly convert to the silica film even at a low temperature, and at high temperature curing, the film density can be further increased and the curing time can be shortened.

The composition for forming a silica-based film according to one embodiment can control a silica-based film having a high film density even at relatively low temperature curing by controlling the chlorine ion content in the range of 0.10 ppm to 5.00 ppm with respect to the whole composition, Can be minimized. When the chlorine ion content is smaller than the above range, the film density may be lowered, and when the chlorine ion content is larger than the above range, the film stress may be increased.

In this respect, the chlorine ion content may be in the range of 0.10 ppm to 5.00 ppm, specifically 0.20 ppm to 3.00 ppm, more specifically 0.20 ppm to 1.00 ppm, but is not limited thereto.

For example, the chlorine ion may be contained in the silica-based film forming composition by adding a chlorine-containing catalyst such as ammonium chloride, perchloric acid, chloric acid, chlorous acid, hypochlorous acid, chlorine gas, hydrochloric acid and the like.

Also, for example, the chlorine ion may be adjusted by controlling the pore size of the filter at the time of aging following the ammonolysis and / or during filtration, thereby controlling the ammonium chloride content in the polymer Based film forming composition according to the present invention.

On the other hand, the hydrogenated polysiloxazane or hydrogenated polysilazane may be contained in an amount of 0.1 to 30% by weight based on the total amount of the composition for forming a silica-based film. When it is included in the above-mentioned range, it is possible to maintain an appropriate viscosity and to be formed evenly and without gap at gap-fill.

The solvent may be an aromatic compound, an aliphatic compound, a saturated hydrocarbon compound, an ether, an ester, or a ketone. Specific examples of the solvent include benzene, toluene, xylene, ethylbenzene, diethylbenzene, trimethylbenzene, Hexane, heptane, octane, nonane, decane, ethylcyclohexane, methylcyclohexane, cyclohexane, cyclohexene, p-menthane, dipropyl ether, dibutyl ether , Anisole, butyl acetate, amyl acetate, methyl isobutyl ketone, and combinations thereof.

In particular, at least one of the solvents preferably comprises a solvent having a high boiling point of 130 ° C or higher. As a result, the flatness of the film can be increased.

The solvent may be included in the remainder of the total amount of the composition for forming a silica-based film except for the above-mentioned components.

The composition for forming a silica-based film may further comprise a thermal acid generator (TAG).

The thermal acid generator is not particularly limited as long as it is a compound capable of generating an acid (H ^& lt ^{; +} & gt ^; ) by heat, but it can be activated at 90 DEG C or higher to generate sufficient acid and have low volatility. Such thermal acid generators can be selected from, for example, nitrobenzyl tosylate, nitrobenzyl benzene sulfonate, phenol sulfonate, and combinations thereof.

The thermal acid generator may be contained in an amount of 0.01 to 25% by weight based on the total amount of the composition for forming a silica-based film.

The composition for forming a silica-based film may further comprise a surfactant.

The surfactant is not particularly limited, and examples thereof include polyoxyethylene alkyl ethers such as polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene cetyl ether and polyoxyethylene oleyl ether, polyoxyethylene nonylphenol ether And polyoxyethylene alkyl allyl ethers such as polyoxyethylene alkyl allyl ether, polyoxyethylene / polyoxypropylene block copolymers, sorbitan monolaurate, sorbitan monopalmitate, sorbitan monostearate, sorbitan monooleate, polyoxyethylene sorbitol Nonionic surfactants such as polyoxyethylene sorbitan fatty acid esters such as polyoxyethylene sorbitan monolaurate, polyoxyethylene sorbitan monolaurate, polyoxyethylene sorbitan monolaurate, polyoxyethylene sorbitan trioleate, and polyoxyethylene sorbitan fatty acid ester, (Manufactured by Dainippon Ink and Chemicals, Inc.), Megafac F171 and F173 (manufactured by Dainippon Ink and Chemicals, Inc.), Prorad FC430 and FC431 (manufactured by Sumitomo 3M Fluorine surfactants such as Asahi Guard AG710, SHAPLON S-382, SC101, SC102, SC103, SC104, SC105 and SC106 (manufactured by Asahi Kasei Corporation), organosiloxane polymer KP341 (manufactured by Shinetsu Kagaku Kogyo Co., Ltd.) and other silicone surfactants.

The surfactant may be included in an amount of 0.001 to 10% by weight based on the total amount of the composition for forming a silica-based film. When the surfactant is included in the above range, the dispersibility of the solution is improved, .

According to another embodiment, there is provided a silica-based film produced by using the above-mentioned composition for forming a silica-based film.

The silica-based film can be used for, for example, a protective film such as an insulating film, a filled film, a hard coating, or a semiconductor capacitor. The insulating film may be used, for example, between a transistor element and a bit line, between a transistor element and a capacitor, but is not limited thereto.

The silica-based film is formed through a two-stage curing process of low-temperature curing and high-temperature curing after applying the silica-based film on the substrate, wherein the low-temperature curing includes a heat treatment at 100 to 400 ° C, And a heat treatment process at 400 to 1000 ° C. The other film forming method is not particularly limited, and can be produced by a known manufacturing method.

According to another embodiment, there is provided an electronic device including the silica-based film described above. The electronic device may include a display device, a semiconductor, an image sensor, and the like.

As an example of the electronic device, a semiconductor capacitor including the above-mentioned silica-based film will be described with reference to Figs. 1 to 9. Fig.

1 to 9 are cross-sectional views sequentially illustrating a method of manufacturing a semiconductor capacitor according to an example.

Referring to FIG. 1, a mold oxide film 3 is formed on a semiconductor substrate 1. A transistor (not shown), a contact pad (not shown), and a contact plug (not shown) are formed on the semiconductor substrate 1. The mold oxide film 3 may be made of an oxide such as silicon oxide (SiO2), tetraethylortho silicate (TEOS), boron phosphorus silicate glass (BPSG) and phosphor silicate glass (PSG) deposition, CVD).

2, the mold oxide film 3 is photolithographically etched to form a gap 2 for exposing the contact plug of the semiconductor substrate 1. The gap 2 may be fine to a width of 50 nm or less and may be formed into a narrow and deep shape having an aspect ratio of 1 or more, which is a ratio of height to width.

3, the conductive layer 5 is laminated on the semiconductor substrate 1 and the mold oxide film 3. Next, as shown in FIG. The conductive layer 5 may be a single layer or a plurality of layers and may be made of a metal having a low resistivity such as aluminum (Al), copper (Cu), silver (Ag) Ni), titanium (Ti), or the like, or made of polysilicon or the like. The conductive layer 5 may be formed by a method such as sputtering or chemical vapor deposition.

Referring to FIG. 4, a filling layer 7 is formed on the conductive layer 5. The filling layer 7 may be a silica-based film formed from a filler comprising a hydrogenated polysilazane or a hydrogenated polysiloxazane. The content of the silica-based film is as described above. The filler may be in the form of a solution mixed with the above-mentioned coating solvent, and may be applied by a solution process such as spin coating or the like.

The packed bed 7 is then heat treated. The heat treatment can be carried out in an atmosphere containing water vapor at 200 DEG C or higher.

5, the filling layer 7 is developed using a developing solution. Thus, the portion of the filling layer 7 formed on the lower conductive layer 5 is removed, leaving only the filled portion of the gap 2, leaving a filling pattern 7a of a predetermined pattern.

6, a part of the conductive layer 5 located above the mold oxide film 3 is removed, and only the portion located between the mold oxide film 3 and the filling pattern 7a is left, 5a. At this time, the lower conductive layer 5 may be removed by a method such as chemical mechanical polishing (CMP) or etch back.

7, the mold oxide film 3 and the filling pattern 7a are simultaneously removed to leave only the lower electrode 5a. The mold oxide film 3 and the filling pattern 7a may be removed by wet etching and the wet etching may be performed only when the mold oxide film 3 and the filling pattern 7a are simultaneously etched, A fluorine-containing etchant such as hydrofluoric acid (HF) and ammonium fluoride (NH ₄ F) can be used.

Referring to FIG. 8, a dielectric layer 9 is formed on the entire surface of the substrate including the lower electrode 5a.

9, a conductive layer is laminated on the dielectric layer 9, and then the upper electrode 11 is formed by photolithography.

The lower electrode 5a, the dielectric layer 9 and the upper electrode 11 form a capacitor.

Hereinafter, a method for producing a silica-based film according to still another embodiment will be described.

A method for manufacturing a silica-based film according to an embodiment includes: applying a composition for forming a silica-based insulating layer on a substrate on a substrate; Drying the substrate coated with the composition for forming a silica-based insulating layer; And curing the substrate.

The silica-based film-forming composition may be in the form of a solution in which the silicon-containing polymer and the solvent are mixed and may be subjected to a solution process such as spin coating, slit coating, screen printing, inkjet, one drop filling, . ≪ / RTI > The step of curing the substrate may include, for example, a heat treatment at a temperature of about 150 캜 or higher.

Hereinafter, embodiments of the present invention will be described in detail with reference to embodiments. The following examples are for illustrative purposes only and are not intended to limit the scope of the invention.

Composition for forming a silica-based film

[ Example  One]

A stirrer having a capacity of 2 L, and a reactor equipped with a temperature control device was replaced with dry nitrogen. Then 1,500 g of dry pyridine was charged into the reactor and the reactor was kept at 5 캜. Subsequently, 140 g of dichlorosilane was gradually added over 2 hours. Then, 85 g of ammonia was slowly added thereto over a period of 4 hours while stirring. Next, dry nitrogen was injected for 120 minutes to remove ammonia remaining in the reactor. The resulting white slurry product was filtered through a Teflon filter having a pore size of 1 m in a dry nitrogen atmosphere to obtain 1,000 g of a filtrate. 1,000 g of dry xylene was added thereto, and the operation of replacing the solvent with xylene in pyridine using a rotary evaporator was repeated three times in total to adjust the solid content concentration to 20%, and 0.05 mol of Teflon And filtered through a filter to obtain a hydrogenated polysilazane solution. To the obtained hydrogenated polysilazane solution, 250 g of dry pyridine was added, and the mixture was polymerized at 100 ° C. to a weight average molecular weight of 5,200. When the polymerization was completed, the operation of replacing the solvent with dibutyl ether using a rotary evaporator was repeated three times at 30 DEG C to adjust the solid content concentration to 20%, and the resultant was filtered through a Teflon filter having a pore size of 0.10 mu m to obtain silica (C1) was obtained. The chlorine ion content of the composition was measured using a chlorine analyzer TOX-2100H (manufactured by Mitsubishi Chemical Corporation) and found to be 0.05 ppm. 50 mg of a chlorine solution (0.168 g of ammonium chloride dissolved in 1 l of dibutyl ether solution) was added to 100 g of the composition, followed by vacuum drying to obtain a silica-based film forming composition (C2) having a final chlorine ion content of 0.10 ppm .

[ Example  2]

A silica-based film-forming composition (C3) was prepared in the same manner as in Example 1, except that 150 mg of a chlorine solution was added to 100 g of the silica-based film-forming composition (C1) to adjust the final chlorine ion content to 0.20 ppm.

[ Example  3]

A composition for forming a silica-based film (C4) was prepared in the same manner as in Example 1 except that 450 mg of a chlorine solution was added to 100 g of the silica-based film-forming composition (C1) to adjust the final chlorine ion content to 0.50 ppm.

[ Example  4]

A composition for forming a silica-based film (C5) was prepared in the same manner as in Example 1 except that 950 mg of a chlorine solution was added to 100 g of the composition (C1) for forming a silica-based film, and the final chlorine ion content was changed to 1.00 ppm.

[ Example  5]

A silica-based film-forming composition (C6) was prepared in the same manner as in Example 1, except that 2.95 g of a chlorine solution was added to 100 g of the silica-based film-forming composition (C1) to adjust the final chlorine ion content to 3.00 ppm .

[ Example  6]

A composition for forming a silica-based film (C7) was prepared in the same manner as in Example 1 except that 4.95 g of a chlorine solution was added to 100 g of the silica-based film-forming composition (C1) to adjust the final chlorine ion content to 5.00 ppm .

[ Example  7]

In the same manner as in Example 1, except that the filtrate was filtered through a Teflon filter having a pore size of 0.10 탆 in place of filtering with a Teflon filter having a pore size of 0.05 탆 in Example 1 to obtain a silica-based To prepare a film-forming composition (C9).

[ Comparative Example  One]

The silica-based film-forming composition (C1) having a chlorine ion content of 0.05 ppm prepared in Example 1 was directly used.

[ Comparative Example  2]

A composition for forming a silica-based film was prepared in the same manner as in Example 1 except that 5.95 g of a chlorine solution was added to 100 g of the composition (C1) for forming a silica-based film, and the final chlorine ion content was changed to 6.00 ppm.

[ Comparative Example 3]

A composition for forming a silica-based film was prepared in the same manner as in Example 1 except that 7.95 g of a chlorine solution was added to 100 g of the composition (C1) for forming a silica-based film, and the final chlorine ion content was changed to 8.00 ppm.

[ Comparative Example  4]

Hydrogenated polysilazane was polymerized so as to have a weight average molecular weight of 4,900, and 150 mg of a chlorine solution was added to 100 g of the obtained composition for forming a silica-based film to obtain a final chlorine ion content of 0.20 ppm. A silica-based film-forming composition was similarly prepared.

[ Comparative Example  5]

Hydrogenated polysilazane was polymerized so as to have a weight average molecular weight of 2,700, and 150 mg of a chlorine solution was added to 100 g of the silica-based film-forming composition obtained therefrom to obtain a final chlorine ion content of 0.20 ppm. A silica-based film-forming composition was similarly prepared.

Evaluation: Film density and stress measurement of silica-based membrane

3 cc of the composition for forming a silica-based film according to Comparative Examples 1 to 5 and Examples 1 to 7 was applied to a central portion of a 8-inch diameter wafer using a spin coater, spin-coated at 1500 rpm for 20 seconds, The plate was heated and dried to form a thin film. Thereafter, thickness and film shrinkage were measured using a reflective spectroscopic film thickness meter and a reflective spectroscopic wafer shrinkage system, and then curing at a low temperature and a high temperature was carried out. After that, thickness and thin film shrinkage were measured again using reflection spectroscopic film thickness meter and reflection spectroscopic wafer shrinkage system. Stress was measured as the difference between thin film stress values before and after low temperature / high temperature curing and after low / high temperature curing, and film density was measured using XRR.

The analysis and evaluation apparatuses are as follows, and the measurement results are shown in Table 1 below.

(Analysis and evaluation device)

Stress Toho technology manufactured by FLX-2320-S

Thickness Thickness: ST-4000 manufactured by K-MAC Co., Ltd.

Membrane coating MIKASA manufactured by MS-A200

High temperature curing Furnace Sungjinsemitec Manufacturing: SJF-1000

XRR manufactured by Panalytical: X'Pert PRO MPD

Chloride ion content (ppm) Film density Stress (Mpa) Comparative Example 1 0.05 1.31 208 Comparative Example 2 6.00 1.35 210 Comparative Example 3 8.00 1.35 211 Comparative Example 4 0.20 1.31 207 Comparative Example 5 0.20 1.28 207 Example 1 0.10 1.35 202 Example 2 0.20 1.35 201 Example 3 0.50 1.36 202 Example 4 1.00 1.39 203 Example 5 2.72 1.41 204 Example 6 2.00 1.40 205 Example 7 5.00 1.45 205

Referring to Table 1, the thin films prepared using the composition for forming a silica film according to Examples 1 to 7 were prepared by using the composition for forming a silica film according to Comparative Example 1 containing less than 0.1 ppm of chlorine ions It can be confirmed that the film density is improved.

The thin films prepared using the compositions for forming a silica-based film according to Examples 1 to 8 were thin films prepared by using the composition for forming a silica film according to Comparative Examples 2 to 3 containing chlorine ions in an amount exceeding 5.00 ppm It can be confirmed that the film stress is improved.

The chlorine ion content of the composition for forming a silica-based film according to Comparative Examples 4 to 5 is within the range of 0.1 ppm to 5.00 ppm as in the present invention, but does not reach the weight average molecular weight defined in the present invention, To 8, it can be confirmed that the film stress due to curing is not good.

That is, the thin film produced using the composition for forming a silica film according to Examples 1 to 8, wherein the silicon polymer has a weight average molecular weight of more than 5,000 but not more than 160,000 and a chlorine ion content in the composition is in the range of 0.10 ppm to 5.00 ppm, And at the same time, the occurrence of film stress due to curing is small.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, And falls within the scope of the invention.

1: semiconductor substrate
2: gap
3: Mold oxide film
5: conductive layer
7: filling layer
7a: Charge pattern
5a: lower electrode
9: dielectric layer
11: upper electrode

Claims (11)

Wherein the silicon-containing polymer has a weight-average molecular weight of more than 5,000 and not more than 160,000, and a silica-based film containing chlorine ions in an amount of 0.10 ppm to 5.00 ppm relative to the total composition / RTI > The method of claim 1,
Wherein the silicon-containing polymer has a weight average molecular weight of more than 5,000 but not more than 70,000. The method of claim 1,
Wherein the silicon-containing polymer has a polydispersity index (PDI) of a weight average molecular weight of 1.5 to 6.0. The method of claim 1,
Wherein the silicon-containing polymer comprises polysilazane, polysiloxazane, or a combination thereof. The method of claim 1,
Wherein the composition for forming a silica-based film further comprises a chlorine-containing catalyst. The method of claim 5,
Wherein the chlorine-containing catalyst comprises ammonium chloride, perchloric acid, chloric acid, chloric acid, hypochlorous acid, chlorine gas, hydrochloric acid or a combination thereof. The method of claim 1,
The solvent is selected from the group consisting of benzene, toluene, xylene, ethylbenzene, diethylbenzene, trimethylbenzene, triethylbenzene, cyclohexane, cyclohexene, decahydronaphthalene, dipentene, pentane, hexane, heptane, At least one selected from the group consisting of ethyl cyclohexane, methyl cyclohexane, cyclohexane, cyclohexene, p-menthane, dipropyl ether, dibutyl ether, anisole, butyl acetate, amyl acetate, methyl isobutyl ketone, Based film-forming composition. The method of claim 1,
Wherein the silicon-containing polymer is contained in an amount of 0.1 to 30% by weight based on the total amount of the composition for forming a silica-based film. The method of claim 1,
Wherein the silicon-containing polymer comprises a hydrogenated polysilazane, a hydrogenated polysiloxazane, or a combination thereof. A silica-based film produced by using the composition for forming a silica-based film according to any one of claims 1 to 9. 11. The method of claim 10,
And the silica-based film.

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