KR20160057299A - Organic light emitting display device - Google Patents

Abstract

The present invention provides an organic light emitting display device capable of ameliorating a color defect or a color variation from the front or sides of the organic light emitting display device. According to the present invention, the organic light emitting display device comprises an organic layer disposed between a first and a second electrodes, and including at least one light emitting unit. The organic layer has a peak wavelength of an EL spectrum of the organic light emitting display device, emitted from the at least one light emitting unit, satisfying a range of X±10 nm, which is a range greater than a predetermined peak wavelength (X nm) by 10 nm and less than the predetermined peak wavelength by 10 nm.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to an organic light-

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to an organic light emitting diode (OLED) display, and more particularly, to an organic light emitting diode (OLED) display capable of improving color defects and color differences in the front or side of an OLED display.

Recently, as the information age has come to the age of information, a display field for visually expressing electrical information signals has been rapidly developed. In response to this, various display devices having excellent performance in thinning, light weighting, Is being developed.

Specific examples of such a display device include a liquid crystal display device (LCD), a plasma display panel (PDP), a field emission display device (FED), an organic light emitting display device Organic Light Emitting Display Device (OLED).

Particularly, the organic light emitting display device is advantageous in that its response speed is higher than that of other display devices, and its luminous efficiency, luminance and viewing angle are large.

The organic light emitting display comprises an organic light emitting layer between two electrodes. Electrons and holes are injected from the two electrodes into the organic light emitting layer to generate an exciton resulting from the combination of electrons and holes. Further, it is a device using the principle that light is generated when the generated excitons fall from the excited state to the ground state.

1. [White Organic Light Emitting Device] (Patent Application No. 10-2009-0092596)

BACKGROUND ART [0002] Organic light emitting display devices have recently been widely recognized as one of the most important displays due to the development of organic light emitting display devices capable of emitting white light.

As a method of realizing a white color in an organic light emitting display, there are a single layer light emitting method, a multilayer light emitting method, a color conversion method, and a device laminating method. In the current method, light is emitted in various layers, Layer light emission method.

An organic light emitting display device using a multi-layered light emitting system is formed by connecting two or more elements having different peak wavelengths. At least two peak wavelengths cause white light emission in combination with luminescent regions having different peak wavelengths in the spectrum. However, since the peak wavelength of the spectrum varies depending on the viewing position of the organic light emitting display, the color of the organic light emitting display changes. Thus, it is difficult to realize a uniform image on the organic light emitting display.

Accordingly, the inventors of the present invention have recognized the above-mentioned problems and have made various experiments for solving color defects and color differences occurring in an organic light emitting display.

The present inventors have developed a new organic light emitting display capable of improving color defects and color differences caused by viewing positions of organic light emitting display devices through various experiments.

A solution to the problem of the present invention is to optimize the shift range of the peak wavelength of the EL spectrum of the organic light emitting diode display to provide an organic light emitting display capable of improving color defects or color differences in the front or side of the organic light emitting display Device.

A problem to be solved according to an embodiment of the present invention is to provide an organic light emitting diode display having a peak wavelength of EL spectrum (PWES) structure in which a shift range of a peak wavelength of an EL spectrum is set, And it is an object of the present invention to provide an organic light emitting display device capable of improving defects and color differences.

The solutions according to the embodiments of the present invention are not limited to the above-mentioned problems, and other problems not mentioned can be clearly understood by those skilled in the art from the following description.

An OLED display according to an embodiment of the present invention includes a first electrode and a second electrode,

And an organic layer disposed between the first electrode and the second electrode and having at least one light emitting portion, wherein the organic layer has a peak wavelength of an EL spectrum of the organic light emitting display device emitted from the at least one light emitting portion And X 10 nm, which is a range of 10 nm larger than a predetermined peak wavelength (X nm) in the range of 10 nm smaller than the predetermined peak wavelength (X nm), by the organic light emitting display Device.

The at least one light emitting portion includes at least one light emitting layer, and the at least one light emitting layer is one of a red light emitting layer, a green light emitting layer, and a blue light emitting layer.

And the peak wavelength of the red EL spectrum is in the range of 600 nm to 650 nm.

And the peak wavelength of the green EL spectrum is in the range of 520 nm to 550 nm.

And the peak wavelength of the blue EL spectrum is in the range of 450 nm to 480 nm.

And the total thickness of the organic layer is within a range of 5% to 5% larger than a predetermined thickness.

The at least one light emitting portion includes at least one light emitting layer, and the at least one light emitting layer includes at least one host and a dopant. The content of the dopant is in a range of 50% smaller than 50% As shown in FIG.

Wherein the at least one light emitting portion comprises two light emitting portions, the two light emitting portions are light emitting layers having the same wavelength region, and the light emitting layers having the same wavelength region are one of a red light emitting layer, a green light emitting layer, and a blue light emitting layer do.

Wherein the at least one light emitting portion comprises two light emitting portions, the two light emitting portions include a first light emitting portion including a first light emitting layer, and a second light emitting portion including a second light emitting layer, Wherein the second light emitting layer includes one of a blue light emitting layer, a deep blue light emitting layer, and a sky blue light emitting layer, and the second light emitting layer includes one of a yellow-green light emitting layer, a green light emitting layer, a red light emitting layer, and a yellow- .

And the peak wavelength of the EL spectrum emitted from the first light emitting portion is in the range of 450 nm to 480 nm.

And the peak wavelength of the EL spectrum emitted from the second light emitting portion is in the range of 520 nm to 650 nm.

Wherein the P-type charge generation layer comprises at least one host and a dopant, and the P-type charge generation layer comprises at least one And a dopant, wherein the content of the dopant is within a range of 50% to 50% smaller than the content of the predetermined dopant.

The at least one light emitting portion may include three light emitting portions, and the three light emitting portions may include a first light emitting portion including a first light emitting layer, a second light emitting portion including a second light emitting layer, Wherein the second light emitting layer comprises a yellow-green light emitting layer, a green light emitting layer, a red light emitting layer, and a yellow-green light emitting layer, and the red light emitting layer comprises a red light emitting layer, Emitting layer and a green light-emitting layer, and the third light-emitting layer includes one of a blue light-emitting layer, a deep blue light-emitting layer, and a sky blue light-emitting layer.

And the peak wavelength of the EL spectrum emitted from the first light emitting portion and the third light emitting portion is in the range of 450 nm to 480 nm.

And the peak wavelength of the EL spectrum emitted from the second light emitting portion is in the range of 520 nm to 650 nm.

Type charge generation layer between the first light-emitting portion and the second light-emitting portion, and a second P-type charge-generation layer between the second light-emitting portion and the third light-emitting portion, the first P- Type charge generation layer and the second P-type charge generation layer include at least one host and a dopant, and the content of the dopant contained in the first P-type charge generation layer and the second P-type charge generation layer is Is set within a range from 50% smaller to 50% larger than the content of the set dopant.

Wherein the organic layer is formed so that the peak wavelength of the EL spectrum of the organic light emitting display device emitted from the at least one light emitting portion satisfies X 8 nm or less which is a range of 8 nm to 8 nm smaller than a predetermined peak wavelength .

And the thickness of the organic layer is set within a range of 3% to 3% larger than a predetermined thickness.

The at least one light emitting portion includes at least one light emitting layer, and the at least one light emitting layer includes at least one host and a dopant. The content of the dopant is in a range of 50% smaller than 50% As shown in FIG.

Wherein the at least one light emitting portion includes a first light emitting portion, a second light emitting portion, and a P-type charge generating layer provided between the first light emitting portion and the second light emitting portion, And the dopant is present in a range of 50% to 50% smaller than the content of the predetermined dopant.

The organic layer is formed so that the peak wavelength of the EL spectrum of the organic light emitting display device emitted from the at least one light emitting portion satisfies X 4 nm or less which is a range of 4 nm to 4 nm smaller than a predetermined peak wavelength .

And the thickness of the organic layer is set within a range of 3% to 3% larger than a predetermined thickness.

The at least one light emitting portion includes at least one light emitting layer, and the at least one light emitting layer includes at least one host and a dopant. The content of the dopant is within a range of 30% As shown in FIG.

     Wherein the at least one light emitting portion includes a first light emitting portion, a second light emitting portion, and a P-type charge generating layer provided between the first light emitting portion and the second light emitting portion, And the dopant is contained in a range of 30% to 30% smaller than the content of the predetermined dopant.

An organic light emitting display according to an embodiment of the present invention includes a first electrode and a second electrode opposing each other on a substrate, and at least one organic layer disposed between the first electrode and the second electrode, And an organic light emitting diode (OLED) display device including at least one light emitting portion, wherein the organic layer has a peak wavelength of EL spectrum (PWES) structure in which a shift range of a peak wavelength of an EL spectrum emitted from the at least one light emitting portion is set .

The structure of the PWES (Peak Wavelength of EL Spectrum) is ± 10 nm or less on the front surface of the OLED display.

The PWES (Peak Wavelength of EL Spectrum) structure is ± 10 nm or less at a position of ± 60 degrees from the front surface of the OLED display.

The PWES (Peak Wavelength of EL Spectrum) structure is in the range of ± 4 nm to ± 8 nm at a position of ± 60 degrees from the front or front of the organic light emitting display.

And the total thickness of the organic layer is within an error range of 5% or less as compared to a predetermined thickness.

Wherein the at least one light emitting portion includes at least one light emitting layer, the at least one light emitting layer includes at least one host and a dopant, and the content of the dopant is within an error range of +/- 50% Respectively.

The at least one light emitting portion includes at least one light emitting layer, and the at least one light emitting layer is one of a red light emitting layer, a green light emitting layer, and a blue light emitting layer.

The at least one light emitting portion is composed of two light emitting portions, and the two light emitting portions include light emitting layers having the same wavelength region.

The at least one light emitting portion is composed of two light emitting portions, and the two light emitting portions include light emitting layers having different wavelength regions.

The P-type charge generation layer may include at least one host and a dopant. The content of the dopant may be about ± 50% And is within the error range below.

The at least one light emitting portion may include three light emitting portions, and the three light emitting portions may include a first light emitting portion including a first light emitting layer, a second light emitting portion including a second light emitting layer, And at least two light emitting layers of the first light emitting layer, the second light emitting layer, and the third light emitting layer are light emitting layers having different wavelength regions.

Type charge generation layer between the first light-emitting portion and the second light-emitting portion, and a second P-type charge-generation layer between the second light-emitting portion and the third light-emitting portion, the first P- Type charge generation layer and the second P-type charge generation layer include at least one host and a dopant, and the content of the dopant contained in the first P-type charge generation layer and the second P-type charge generation layer is And is within an error range of +/- 50% or less as compared with the content of the dopant set.

The details of other embodiments are included in the detailed description and drawings.

According to one embodiment of the present invention, there is an effect that color defects and color differences in the front and side of the OLED display can be improved by optimizing the shift range of the peak wavelength of the EL spectrum of the OLED display.

In addition, according to one embodiment of the present invention, the OLED display has a peak wavelength of EL spectrum (PWES) structure in which a peak wavelength shift range of the EL spectrum is set, There is an effect that defectiveness and color difference can be improved.

The effects of the present invention are not limited to the effects mentioned above, and other effects not mentioned can be clearly understood by those skilled in the art from the following description.

The scope of the claims is not limited by the matters described in the contents of the invention, as the contents of the invention described in the problems, the solutions to the problems and the effects to be solved do not specify essential features of the claims.

1 is a schematic cross-sectional view illustrating an organic light emitting device according to a first embodiment of the present invention.
2 is a schematic cross-sectional view illustrating an organic light emitting device according to a second embodiment of the present invention.
3 is a schematic cross-sectional view illustrating an organic light emitting device according to a third embodiment of the present invention.
4 is a schematic cross-sectional view illustrating an organic light emitting device according to a fourth embodiment of the present invention.
5 is a cross-sectional view illustrating an example of an OLED display according to a fourth embodiment of the present invention.
6A and 6B are diagrams showing an EL spectrum according to a fourth embodiment of the present invention.
7A to 7C are diagrams showing EL spectra according to the total thickness of the organic layer in the first embodiment of the present invention.
8A to 8C are diagrams showing EL spectra according to the content of the dopant of the light emitting layer in the first embodiment of the present invention.
9 is a view showing an EL spectrum according to the total thickness of the organic layer in the fourth embodiment of the present invention.
10 is a diagram showing an EL spectrum according to the content of the dopant of the light emitting layer in the fourth embodiment of the present invention.
11 is a diagram showing an EL spectrum according to the content of the dopant included in the charge generation layer in the fourth embodiment of the present invention.
12 is a diagram showing an EL spectrum according to an embodiment of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention, and the manner of achieving them, will be apparent from and elucidated with reference to the embodiments described hereinafter in conjunction with the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Is provided to fully convey the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims.

The shapes, sizes, ratios, angles, numbers, and the like disclosed in the drawings for describing the embodiments of the present invention are illustrative, and thus the present invention is not limited thereto. Like reference numerals refer to like elements throughout the specification. In the following description, well-known functions or constructions are not described in detail since they would obscure the invention in unnecessary detail. In the case where the word 'includes', 'having', 'done', etc. are used in this specification, other parts can be added unless '~ only' is used. Unless the context clearly dictates otherwise, including the plural unless the context clearly dictates otherwise.

In interpreting the constituent elements, it is construed to include the error range even if there is no separate description.

In the case of a description of the positional relationship, for example, if the positional relationship between two parts is described as 'on', 'on top', 'under', and 'next to' Or " direct " is not used, one or more other portions may be located between the two portions.

In the case of a description of a temporal relationship, for example, if the temporal relationship is described by 'after', 'after', 'after', 'before', etc., May not be continuous unless they are not used.

The first, second, etc. are used to describe various components, but these components are not limited by these terms. These terms are used only to distinguish one component from another. Therefore, the first component mentioned below may be the second component within the technical spirit of the present invention.

It is to be understood that each of the features of the various embodiments of the present invention may be combined or combined with each other, partially or wholly, technically various interlocking and driving, and that the embodiments may be practiced independently of each other, It is possible.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings and embodiments.

1 is a schematic cross-sectional view illustrating an organic light emitting device according to a first embodiment of the present invention. The organic light emitting device 100 shown in FIG. 1 has a patterned emission layer structure and emits light having a monochromatic or the same wavelength region. The pattern light-emitting layer structure has a structure in which light-emitting layers emitting light of different colors, for example, red, green, and blue light-emitting layers are separated for each pixel, ) Or emits light having the same wavelength region. Each light emitting layer can be pattern-deposited using a mask, e.g., a fine metal mask (FMM), which is opened per pixel. In FIG. 1, for convenience of description, only the structure disposed in one pixel is shown.

The organic light emitting device 100 shown in FIG. 1 includes first and second electrodes 102 and 104 on a substrate 101 and a first hole transport layer (HTL) 104 between the first electrode 102 and the second electrode 104. A hole transport layer 112, a first emission layer (EML) 114, and a first electron transport layer (ETL) 116. That is, the light emitting unit includes at least one light emitting unit positioned between the first electrode 102 and the second electrode 104. At least one light emitting portion may include a first hole transport layer (HTL) 112, a first emission layer (EML) 114, and a first electron transport layer (ETL)

The first electrode 102 may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), or the like, which is a transparent conductive material such as TCO (Transparent Conductive Oxide) But is not limited thereto. Alternatively, the first electrode 102 may be formed of gold (Au), silver (Ag), aluminum (Al), molybdenum (Mo), magnesium (Mg), lithium (Li), calcium (Ca), lithium fluoride (Mg: LiF), indium tin oxide (ITO), indium zinc oxide (IZO), or the like, or a single layer or multiple layers . However, the present invention is not limited thereto.

The first electrode 102 may include a reflective layer so that the light L emitted from the first emitting layer 114 does not pass through the first electrode 102 and is not emitted downward. Specifically, the first electrode 102 may have a three-layer structure in which a first transparent layer, a reflective layer, and a second transparent layer are sequentially stacked. The first transparent layer and the second transparent layer may be made of a transparent conductive oxide (TCO) material such as indium tin oxide (ITO) or indium zinc oxide (IZO). The reflective layer between the two transparent layers may be made of a metal material such as, for example, copper (Cu), silver (Ag), or palladium (Pd). For example, ITO / Ag / ITO. Alternatively, the first electrode 102 may have a two-layer structure in which a transparent layer and a reflective layer are laminated.

The second electrode 104 may be formed of a metal such as gold (Au), silver (Ag), aluminum (Al), molybdenum (Mo), magnesium (Mg), lithium (Ca), lithium fluoride (LiF), indium tin oxide (ITO), indium zinc oxide (IZO), silver-magnesium (Ag) Or alloys thereof, or may be composed of a single layer or multiple layers. However, the present invention is not limited thereto.

The first electrode 102 and the second electrode 104 may be referred to as an anode or a cathode, respectively. Alternatively, the first electrode 102 may be a transmission electrode and the second electrode 104 may be a transflective electrode. Alternatively, the first electrode 102 may be a reflective electrode and the second electrode 104 may be a semi-transmissive electrode. Alternatively, the first electrode 102 may be a transflective electrode and the second electrode 104 may be a transmissive electrode. Alternatively, at least one of the first electrode 102 and the second electrode 104 may be a semi-transparent electrode.

In addition, a capping layer may be further formed on the second electrode 104 to protect the organic light emitting device, and the camping layer may be omitted depending on the structure and characteristics of the organic light emitting device.

The first hole transport layer (HTL) 112 may be formed of two or more layers, and a hole injection layer (HIL) may be further formed under the first hole transport layer (HTL) 112. The first hole transport layer (HTL) 112 may include NPD (N, N'-bis (naphthalene-1-yl) -N, N'- N'-bis (phenyl) -benzidine, TPD (N, N'-bis (3-methylphenyl) -N, N'-bis ), But the present invention is not limited thereto. The hole injection layer (HIL) may be formed of, for example, F4-TCNQ (2,3,5,6-tetrofluoro-7,7,8,8-tetracyano-quinodimethane), CuPc But are not limited thereto.

The first electron transport layer (ETL) 116 may be formed of two or more layers, and the electron injection layer (EIL) may be further formed on the first electron transport layer (ETL) 116. The first electron transport layer (ETL) 116 may be formed of, for example, Alq3 (tris (8-hydroxy-quinolonato) aluminum) or Liq (8-hydroxyquinolinolato-lithiun). The electron injection layer (EIL) may be formed of LiF or the like, but is not limited thereto.

The first hole transport layer (HTL) 112 supplies holes from the first electrode 102 to the first emission layer (EML) 114. The first electron transport layer (ETL) 116 supplies electrons received from the second electrode 104 to the first emission layer (EML) 114. Therefore, in the first emission layer (EML) 114, holes supplied through the first hole transport layer (HTL) 112 and electrons supplied through the first electron transport layer (ETL) And an exciton is generated. The region where the excitons are generated may be referred to as a recombination zone or an emission area.

The first light emitting layer (EML) 114 may be a light emitting layer having the same wavelength region. The light emitting layer having the same wavelength region may be composed of one of red, green, and blue light emitting layers. The first emission layer (EML) 114 may comprise at least one host and at least one dopant. At least one host may include a hole-type host and an electron-type host. Alternatively, a host can be a mixed host consisting of two or more hosts. In the case of two or more types of hosts, it may be a hole-type host and an electron-type host. And, the at least one dopant may comprise a phosphorescent dopant or a fluorescent dopant. Although the first light emitting layer (EML) 114 is shown as one light emitting layer in FIG. 1, a red light emitting layer patterned for each of red, green, and blue pixels, a green light emitting layer, A light emitting layer and a green light emitting layer.

When the first light emitting layer (EML) 114 is a red light emitting layer, the first light emitting layer (EML) 114

The constituent host may be, for example, CBP (4,4'bis (carbozol-9-yl) biphenyl), MCP (1,3-bis (carbazol-9- yl) benzene), NPD (naphthalene-1-yl) -N, N'-bis (phenyl) -2,2'-dimethylbenzidine), Be complex, and the like. The dopant that constitutes the first light emitting layer (EML) 114 is Ir (btp) 2 (acac) (bis (2-benzo [b] thiophen-2-yl-pyridine) (acetylacetonate (3-tris (1-phenylquinoline) iridium (III)), Pt (TPBP) (5,10,15 , 20-tetraphenyltetrabenzoporphyrin platinum complex, etc. The dopant constituting the first emission layer (EML) 114 may be a dopant of a fluorescent material containing perylene. (EML) 114 is a red light emitting layer, the light emitted from the first light emitting portion 110 may be a portion of the light emitted from the second light emitting portion 110. In this case, The peak wavelength may be between 600 nm and 650 nm.

When the first emission layer (EML) 114 is a green emission layer, the host constituting the first emission layer (EML) 114 is, for example, CBP (4,4'bis (carbozol-9-yl) biphenyl), MCP (1,3-bis (carbazol-9-yl) benzene), NPD (N, N'-bis (naphthalene- -dimethylbenzidine), Be complex, and the like. The dopants constituting the first light emitting layer (EML) 114 include, for example, Ir (ppy) 3 (tris (2-phenylpyridine) iridium (III)), Ir (ppy) (acetylacetonato) iridium (III)). Alternatively, the dopant constituting the first light emitting layer (EML) 114 may be a dopant of a fluorescent material containing Alq3 (tris (8-hydroxyquinolino) aluminum). The host or the material of the dopant constituting the green light emitting layer does not limit the content of the present invention. When the first emission layer (EML) 114 is a green emission layer, the peak wavelength (? Max) of the light emitted from the first emission section 110 may be 520 nm or more and 550 nm or less.

When the first emission layer (EML) 114 is a blue emission layer, the host constituting the first emission layer (EML) 114 may be CBP (4,4'bis (carbozol-9-yl) biphenyl) At least one host material including 1,3-bis (carbazol-9-yl) benzene, ADN (9,10-di (naphth-2-yl) anthracene) and the like. The dopant constituting the first light emitting layer (EML) 114 is a dopant of a phosphorescent material comprising a dopant material including FIrpic (bis [2- (4,6-difluorophenyl) pyridinato-N] picolinato) iridium ≪ / RTI > Alternatively, the dopant constituting the first emission layer (EML) 114 may be a dopant of a fluorescent material including a PFO (polyfluorene) -based polymer, a PPV (polyphenylenevinylene) -based polymer, or the like. The host or dopant material constituting the blue light emitting layer does not limit the content of the present invention. When the first emission layer (EML) 114 is a blue emission layer, the peak wavelength (? Max) of the light emitted from the first emission section 110 may be 450 nm or more and 480 nm or less.

The first hole transport layer (HTL) 112, the first emission layer (EML) 114, the first electron transport layer (ETL) 116, the hole injection layer (HIL), the electron injection layer (EIL) Can be said to be an organic layer. Accordingly, at least one light emitting portion may include at least one organic layer.

When the organic light emitting diode of FIG. 1 is applied to an organic light emitting diode display, the organic light emitting display of FIG. 1 may be implemented by a display device including three pixels of RGB including a mono element. Therefore, a display device that displays various colors by combining the three primary colors of RGB can be implemented. The OLED display including the organic light emitting diode according to the first embodiment of the present invention includes a bottom emission display device, a top emission display device, a dual emission display device, It can be applied to an automotive lighting device or the like. BACKGROUND OF THE INVENTION [0002] Vehicle lighting devices are classified into headlights, high beams, taillights, brake lights, back-up lights, brake lights, fog lamps, a turn signal light, and an auxiliary lamp. However, the present invention is not limited thereto. Alternatively, it can be variously applied to all the indicator lights used to secure the driver's field of view and to send and receive signals of the vehicle. The organic light emitting display device including the organic light emitting diode according to the first embodiment of the present invention may be applied to mobile, monitor, TV, and the like.

2 is a schematic cross-sectional view illustrating an organic light emitting device according to a second embodiment of the present invention. The organic light emitting device 200 shown in FIG. 2 has a patterned emission layer structure and emits light having a monochromatic or the same wavelength region. The pattern light-emitting layer structure has a structure in which light-emitting layers emitting light of different colors, for example, red, green, and blue light-emitting layers are separated for each pixel, ) Or emits light having the same wavelength region. Each light emitting layer can be pattern-deposited using a mask, e.g., a fine metal mask (FMM), which is opened per pixel. In FIG. 2, for convenience of explanation, only the structure disposed in one pixel is shown. In FIG. 1, the organic light emitting device is composed of one light emitting portion. In FIG. 2, the organic light emitting device includes two light emitting portions.

The organic light emitting device 200 according to the second embodiment of the present invention includes a substrate 201, a first electrode 202 and a second electrode 204, a first electrode 202 and a second electrode 204, The first light emitting portion 210 and the second light emitting portion 220 are provided between the first light emitting portion 210 and the second light emitting portion 220. The first substrate 201, the first electrode 202 and the second electrode 204 of FIG. 2 are the same as the first substrate 101, the first electrode 102, and the second electrode 104). Therefore, detailed description of the first substrate 201, the first electrode 202, and the second electrode 204 of FIG. 2 will be omitted.

The first light emitting portion 210 includes a first hole transport layer (HTL) 212, a first light emitting layer (EML) 214, and a first electron transport layer (ETL) 216 on a first electrode 202 Lt; / RTI >

A hole injection layer (HIL) may be further formed on the first electrode 202.

The first electron transport layer (ETL) 216 may be formed by applying two or more layers or two or more materials. Further, an electron injection layer (EIL) may be further formed on the first electron transport layer (ETL)

The second light emitting portion 220 includes a second hole transport layer (HTL) 222, a second light emitting layer (EML) 234, and a second electron transport layer (ETL) 226 on the first light emitting portion 210 .

A hole injection layer (HIL) may be further formed under the second hole transport layer (HTL) 222.

The second electron transport layer (ETL) 226 can be formed by applying two or more layers or two or more materials. An electron injection layer (EIL) may be further formed on the second electron transport layer (ETL) 226.

(ETL) 216, a second electron transport layer (ETL) 226, a first hole transport layer (HTL) 212, a second hole transport layer (HTL) 222, an electron injection layer (EIL) (HTL) 112, an electron injection layer (EIL) and a hole injection layer (HIL), which are described in conjunction with FIG. 1, and a hole injection layer It may be composed of the same material.

In the first emission layer (EML) 214, the holes supplied through the first hole transport layer (HTL) 212 and the electrons supplied through the first electron transport layer (ETL) 216 are recombined An exciton is generated. The region where the excitons are generated may be referred to as a recombination zone or an emission zone.

In the second emission layer (EML) 224, the holes supplied through the second hole transport layer (HTL) 222 and the electrons supplied through the second electron transport layer (ETL) 226 are recombined An exciton is generated. The region where the excitons are generated may be referred to as a recombination zone or an emission zone.

The first light emitting layer (EML) 214 and the second light emitting layer (EML) 224 may be light emitting layers having the same wavelength region. The light emitting layer having the same wavelength region can be composed of, for example, one of red, green and blue light emitting layers. The first light emitting layer (EML) 214 and the second light emitting layer (EML) 224 may be composed of at least one host and at least one dopant. At least one host may include a hole-type host and an electron-type host. Alternatively, a host can be a mixed host consisting of two or more hosts. In the case of two or more types of hosts, it may be a hole-type host and an electron-type host. And, the at least one dopant may comprise a phosphorescent dopant or a fluorescent dopant. The first light emitting layer (EML) 214 and the second light emitting layer (EML) 224 are substantially the same as those of the first light emitting layer 114 described with reference to FIG. 1, and a detailed description thereof will be omitted. When the first light emitting layer (EML) 214 and the second light emitting layer (EML) 224 are red light emitting layers, a peak wavelength of light emitted from the first light emitting portion 210 and the second light emitting portion 220 peak wavelength, [lambda] max) may be 600 nm or more and 650 nm or less. When the first light emitting layer (EML) 214 and the second light emitting layer (EML) 224 are green light emitting layers, the peak of the light emitted from the first light emitting portion 210 and the second light emitting portion 220 The peak wavelength (lambda max) may be 520 nm or more and 550 nm or less. When the first light emitting layer (EML) 214 and the second light emitting layer (EML) 224 are blue light emitting layers, the peak of the light emitted from the first light emitting portion 210 and the second light emitting portion 220 The peak wavelength ([lambda] max) may be 450 nm or more and 480 nm or less. In FIG. 2, the first emission layer (EML) 214 and the second emission layer (EML) 224 are shown as being composed of one emission layer. However, each of the red, green, A red light emitting layer, a green light emitting layer, and a green light emitting layer.

A first charge generation layer (CGL) 240 may be further formed between the first light emitting portion 210 and the second light emitting portion 220. The first charge generation layer (CGL) 240 adjusts the charge balance between the first light emitting portion 210 and the second light emitting portion 220. The first charge generation layer (CGL) 240 may include a first N-type charge generation layer (N-CGL) and a first P-type charge generation layer (P-CGL).

The first N-type charge generation layer (N-CGL) injects electrons into the first light emitting layer (EML) 214. The first N-type charge generation layer (N-CGL) is made of an alkali metal such as lithium (Li), sodium (Na), potassium (K), or cesium (Cs), magnesium (Mg), strontium (Sr) But is not limited to, an organic layer doped with an alkaline earth metal such as barium (Ba), or radium (Ra). The first P-type charge generation layer (P-CGL) serves to inject holes into the second emission layer (EML) 224. The first P-type charge generation layer (P-CGL) may be formed of an organic layer including a P-type dopant, but is not limited thereto.

In addition, a capping layer may be further formed on the second electrode 204 to protect the organic light emitting device, and the camping layer may be omitted depending on the structure and characteristics of the organic light emitting device.

The first hole transport layer (HTL) 212, the first emission layer (EML) 214, the first electron transport layer (ETL) 216, the hole injection layer (HIL), the electron injection layer (EIL) (HTL) 212, a second light emitting layer (EML) 214, a second electron transport layer (ETL) 216, a first charge generation layer (CGL) 240, a capping layer, have. Accordingly, at least one light emitting portion may include at least one organic layer.

Although FIG. 2 illustrates an organic light emitting device including two light emitting portions, it may be an organic light emitting device including three or more light emitting portions.

When the organic light emitting device of FIG. 2 is applied to an organic light emitting display, the organic light emitting display of FIG. 2 may be implemented by a display device including three pixels of RGB including a mono device. Therefore, a display device that displays various colors by combining the three primary colors of RGB can be implemented. The organic light emitting display device including the organic light emitting diode according to the second embodiment of the present invention includes a bottom emission display device, a top emission display device, a dual emission display device, Device or the like. BACKGROUND OF THE INVENTION [0002] Vehicle lighting devices are classified into headlights, high beams, taillights, brake lights, back-up lights, brake lights, fog lamps, a turn signal light, and an auxiliary lamp. However, the present invention is not limited thereto. Alternatively, it can be variously applied to all the indicator lights used to secure the driver's field of view and to send and receive signals of the vehicle. The organic light emitting display device including the organic light emitting diode according to the second embodiment of the present invention may be applied to mobile, monitor, TV, and the like.

3 is a schematic cross-sectional view illustrating an organic light emitting device according to a third embodiment of the present invention.

The white organic light emitting device 300 shown in FIG. 3 includes a first electrode 302 and a second electrode 304 on a substrate 301 and a first electrode 302 and a second electrode 304 between the first electrode 302 and the second electrode 304, And includes a light emitting portion 310 and a second light emitting portion 320. The first substrate 301, the first electrode 302 and the second electrode 304 of FIG. 3 are the same as those of the first substrate 101, the first electrode 102, and the second electrode 104). Therefore, detailed descriptions of the first substrate 301, the first electrode 302, and the second electrode 304 in FIG. 3 are omitted.

The first light emitting portion 310 includes a first HTL 312, a first EML 314 and a first ETL 316 on the first electrode 302 .

The hole injection layer HIL may be further formed on the first electrode 302 and the holes from the first electrode 302 may be smoothly transferred to the first hole transport layer 312 . The first hole transport layer (HTL) 312 supplies holes from the hole injection layer (HIL) to the first emission layer (EML) 314. The first electron transport layer (ETL) 316 supplies electrons received from the second electrode 304 to the first emission layer (EML) 314. Therefore, in the first emission layer (EML) 314, the holes supplied through the first hole transport layer (HTL) 312 and the electrons supplied through the first electron transport layer (ETL) 316 An exciton is generated because it is recombined. The region where the excitons are generated may be referred to as a recombination zone or a light emission region (Emission Zone).

The hole injecting layer (HIL) may be formed by using MTDATA (4,4 ', 4 "-tris (3-methylphenylamino) triphenylamine), copper phthalocyanine (CuPc), poly (3,4-ethylenedioxythiophene, polystyrene sulfonate But is not limited thereto.

The first hole transport layer (HTL) 312 may be formed by applying two or more layers or two or more materials. The first hole transport layer 312 may be formed of NPD (N, N'-bis (phenyl) -2,2'-dimethylbenzidine, TPD (N, (2,2 ', 7,7-tetrakis (N, N-diphenylamino) -9,9 ' -spirofluorene) and MTDATA (4,4 ', 4 "-tris (N-3-methylphenyl-N-phenylamino) -triphenylamine). However, the present invention is not limited thereto.

The first electron transport layer (ETL) 316 may be formed by applying two or more layers or two or more materials. The first electron transport layer (ETL) 316 is formed of Alq3 (tris (8-hydroxy-quinolinato) aluminum), PBD (2- (4-biphenyl) -oxadiazole), TAZ (3- (4-biphenyl) 4-phenyl-5-tert-butylphenyl-1,2,4-triazole), spiro-PBD, bis (2-methyl-80quiolinolate) -4- phenylphenolato) aluminum, Liq (8-hydroxyquinolinolato-lithium), BMB-3T (5,5'- bis (dimethylboryl) -2,2 ' naphthyl-substituted, TPBi (2,2 ', 2 "- (1,3,5-benzinetriyl) -tris (1-phenyl-1-H-benzimidazole), and COT cyclooctatetracene) But is not limited thereto. An electron injection layer (EIL) may be further formed on the first electron transport layer (ETL) 316.

The first light emitting layer (EML) 314 of the first light emitting portion 310 may be formed of one of a blue light emitting layer, a deep blue light emitting layer, and a sky blue light emitting layer. The peak wavelength λmax of the light emitted from the first light emitting portion 310 may be 450 nm or more and 480 nm or less.

The host of the first emission layer (EML) 314 may be formed of a single material, or may be a mixed host made of a mixed material. The mixing host may include a hole-type host and an electron-type host. For example, the host constituting the first emission layer (EML) 314 may be CBP (4,4'bis (carbozol-9-yl) biphenyl), MCP (1,3- ), NPD (N, N'-bis (naphthalene-1-yl) -N, N'- bis (phenyl) -2,2'- dimethylbenzidine), spiro- DPVBi (2,2 ' tetrakis (2,2-diphenylvinyl) -spiro-9,9'-bifluorene) spiro-6P (spirobifluorene), distyrylbenzene (DSB), distyrylarylene (DSA), PFO (polyfluorene) ), Or a mixture of two or more of them, and the present invention is not limited thereto.

The dopant constituting the first emission layer (EML) 314 may be pyrene-based. More specifically, the compound may be composed of a pyrene-based compound substituted with an arylamine-based compound, but is not limited thereto.

The first hole transport layer (HTL) 312, the first emission layer (EML) 314, the first electron transport layer (ETL) 316, the hole injection layer (HIL), the electron injection layer (EIL) (HBL), and the electron blocking layer (EBL) are organic layers. Accordingly, at least one light emitting portion may include at least one organic layer.

The second light emitting unit 320 includes a second hole transport layer (HTL) 322, a second light emitting layer (EML) 324,

And a second electron transport layer (ETL) 326.

The second hole transport layer (HTL) 322 may be made of the same material as the first HTL 112, but is not limited thereto. The second hole transporting layer (HTL) 322 may be formed by applying two or more layers or two or more materials. Further, a hole injection layer (HIL) may be further formed under the second hole transport layer (HTL) 322.

The second electron transport layer (ETL) 326 may be made of the same material as the first electron transport layer (ETL) 316, but is not limited thereto. The second electron transport layer (ETL) 326 may be formed by applying two or more layers or two or more materials. An electron injection layer (EIL) may further be formed on the second electron transport layer (ETL) 326.

The first light emitting layer (EML) 314 and the second light emitting layer (EML) 324 may be composed of light emitting layers having different wavelength regions.

The second emission layer 324 may include at least one of a yellow-green emission layer, a green emission layer, a red emission layer, a yellow-green emission layer, and a red emission layer, And a green light emitting layer. When the red light emitting layer is further formed, the red efficiency of the organic light emitting display device can be improved. When the second emission layer (EML) 324 is a yellow-green emission layer, the peak wavelength of the light emitted from the second emission layer 320 may be 550 nm or more and 570 nm or less. When the second emission layer (EML) 324 is a green emission layer, the peak wavelength? Max of the light emitted from the second emission part 320 may be 520 nm or more and 550 nm or less. When the second light emitting layer (EML) 324 is a red light emitting layer and a yellow-green light emitting layer, the peak wavelength (lambda max) of the light emitted from the second light emitting portion 320 is 550 nm Or more and 650 nm or less. When the second light emitting layer (EML) 324 is a red light emitting layer and a green light emitting layer, the peak wavelength (lambda max) of the light emitted from the second light emitting portion 320 may be 520 nm or more and 650 nm or less have.

The host of the second emission layer (EML) 324 may be formed of a single material or a mixed host made of a mixed material. The mixing host may include a hole-type host and an electron-type host. For example, the host constituting the second emission layer (EML) 324 may be selected from the group consisting of 4,4 ', 4 "-tris (carbazol-9-yl) triphenylamine, CBP (4,4'- 9-yl) biphenyl, bis (2-methyl-8-quinolinolate) - aluminum and PPV (polyphenylenevinylene). The dopant constituting the second emission layer (EML) 324 may be made of an iridium-based compound, but is not limited thereto.

The second hole transport layer (HTL) 322, the second emission layer (EML) 324, the second electron transport layer (ETL) 326, the hole injection layer (HIL), the electron injection layer (EIL) (HBL), and the electron blocking layer (EBL) are organic layers. Accordingly, at least one light emitting portion may include at least one organic layer.

A first charge generating layer (CGL) 340 may be further formed between the first light emitting portion 310 and the second light emitting portion 320. The first charge generation layer (CGL) 340 adjusts the charge balance between the first light emitting portion 310 and the second light emitting portion 320. The first charge generation layer (CGL) 340 may include a first N-type charge generation layer (N-CGL) and a first P-type charge generation layer (P-CGL).

The first N-type charge generation layer (N-CGL) may be formed of an alkali metal such as lithium (Li), sodium (Na), potassium (K), or cesium (Cs), magnesium (Mg), strontium (Sr) Barium (Ba), or an organic layer doped with an alkaline earth metal such as radium (Ra). However, the present invention is not limited thereto. The first P-type charge generation layer (P-CGL) may be formed of an organic layer including a P-type dopant, but the present invention is not limited thereto. The first charge generation layer (CGL) 340 may be formed as a single layer. The first N-type charge generation layer (N-CGL) and the first P-type charge generation layer (P-CGL), which are the first charge generation layer (CGL) 340, may be referred to as an organic layer.

The organic light emitting display device according to the third embodiment of the present invention includes a first light emitting portion including a first light emitting layer and a second light emitting portion including a second light emitting portion, Display device. Therefore, when the organic light emitting diode according to the third embodiment of the present invention is applied to an organic light emitting diode display, it can be realized as a white OLED display device having four pixels of WRGB. Alternatively, when the organic light emitting diode according to the third embodiment of the present invention is applied to an organic light emitting display, a white organic light emitting display having three pixels of RGB can be realized. The OLED display including the organic light emitting diode according to the third exemplary embodiment of the present invention may include a bottom emission display device, a top emission display device, a dual emission display device, It can be applied to an automotive lighting device or the like. BACKGROUND OF THE INVENTION [0002] Vehicle lighting devices are classified into headlights, high beams, taillights, brake lights, back-up lights, brake lights, fog lamps, a turn signal light, and an auxiliary lamp. However, the present invention is not limited thereto. Alternatively, it can be variously applied to all the indicator lights used to secure the driver's field of view and to send and receive signals of the vehicle. The organic light emitting display device including the organic light emitting diode according to the third embodiment of the present invention may be applied to mobile, monitor, TV, and the like. In the organic light emitting display device including the organic light emitting diode according to the third embodiment of the present invention, a pixel region may be defined on the substrate 301 by a gate line or a data line. A power supply line extending in parallel to either the gate line or the data line is located, and a switching thin film transistor connected to the gate wiring or the data line and a driving thin film transistor connected to the switching thin film transistor are disposed in each pixel region. The driving thin film transistor is connected to the first electrode 302.

4 is a schematic cross-sectional view illustrating a white organic light emitting device according to a fourth embodiment of the present invention.

A white organic light emitting device 400 shown in FIG. 4 includes a first electrode 402 and a second electrode 404 on a substrate 401 and a first electrode 402 and a second electrode 404 between the first electrode 402 and the second electrode 404. A light emitting unit 410, a second light emitting unit 420, and a third light emitting unit 430. The first substrate 401, the first electrode 402 and the second electrode 404 of FIG. 4 are the same as those of the first substrate 101, the first electrode 102, and the second electrode 104). Therefore, detailed description of the first substrate 401, the first electrode 402, and the second electrode 404 in FIG. 4 will be omitted. The first light emitting portion 410 and the second light emitting portion 420 of FIG. 4 are substantially the same as the first light emitting portion 310 and the second light emitting portion 320 described with reference to FIG. Therefore, detailed description of the first light emitting portion 410 and the second light emitting portion 420 of FIG. 4 will be omitted.

The first light emitting portion 410 may include a first hole transport layer (HTL) 412, a first emission layer (EML) 414, and a first electron transport layer (ETL) 416. The first emission layer (EML) 414 includes a blue emission layer and a deep blue emission layer. And a sky blue light emitting layer. The peak wavelength λmax of the light emitted from the first light emitting portion 410 may be 450 nm or more and 480 nm or less.

The second light emitting portion 420 may include a second hole transport layer (HTL) 422, a second emission layer (EML) 424, and a second electron transport layer (ETL) 426. The second emission layer (EML) 424 may include at least one of a yellow-green emission layer, a green emission layer, a red emission layer, a yellow-green emission layer, and a red emission layer, And a green light emitting layer. When the red light emitting layer is further formed, the red efficiency of the organic light emitting display device can be improved. When the second light emitting layer (EML) 424 is a yellow-green light emitting layer, the peak wavelength of the light emitted from the second light emitting portion 420 may be 550 nm or more and 570 nm or less. When the second emission layer (EML) 424 is a green emission layer, the peak wavelength of the light emitted from the second emission part 420 may be 520 nm or more and 550 nm or less. When the second light emitting layer (EML) 424 is a red light emitting layer and a yellow-green light emitting layer, the peak wavelength (lambda max) of the light emitted from the second light emitting portion 420 is 550 nm Or more and 650 nm or less. When the second light emitting layer (EML) 424 is a red light emitting layer and a green light emitting layer, the peak wavelength of the light emitted from the second light emitting portion 420 may be 520 nm or more and 650 nm or less have.

A first charge generating layer (CGL) 440 may be further formed between the first light emitting portion 410 and the second light emitting portion 420. The first charge generation layer (CGL) 440 adjusts the charge balance between the first light emitting portion 410 and the second light emitting portion 420. The first charge generation layer (CGL) 440 may include a first N-type charge generation layer (N-CGL) and a first P-type charge generation layer (P-CGL).

The first N-type charge generation layer (N-CGL) may be formed of an alkali metal such as lithium (Li), sodium (Na), potassium (K), or cesium (Cs), magnesium (Mg), strontium (Sr) Barium (Ba), or an organic layer doped with an alkaline earth metal such as radium (Ra). However, the present invention is not limited thereto. The first P-type charge generation layer (P-CGL) may be formed of an organic layer including a P-type dopant, but the present invention is not limited thereto. The first charge generation layer (CGL) 440 may be formed as a single layer.

The third light emitting portion 430 includes a third hole transport layer (HTL) 432, a third light emitting layer (EML) 434, and a third electron transport layer (ETL) 436 on the second light emitting portion 420. . ≪ / RTI >

A hole injection layer (HIL) may be further formed under the third hole transport layer (HTL) 432.

The third hole transport layer (HTL) 432 is formed of TPD (N, N'-bis (3-methylphenyl) -N, N'- 1-yl) -N, N'-bis (phenyl) benzidine), and the like. The third hole transport layer (HTL) 432 may be formed by applying two or more layers or two or more materials.

An electron injection layer (EIL) may further be formed on the third electron transport layer (ETL) 436.

The third electron transport layer (ETL) 436 may be formed of the same material as the first electron transport layer (ETL) 416, but is not limited thereto. The third electron transport layer (ETL) 436 may be formed by applying two or more layers or two or more materials.

The third light emitting layer (EML) 434 of the third light emitting portion 430 includes a blue light emitting layer, a deep blue light emitting layer, And a sky blue light emitting layer. The peak wavelength (λmax) of the light emitted from the third emission layer (EML) 434 may be 450 nm or more and 480 nm or less.

The host of the third emission layer (EML) 434 may be composed of a single material or a mixed host made of a mixed material. The mixing host may include a hole-type host and an electron-type host. For example, the host constituting the third emission layer (EML) 434 may be CBP (4,4'bis (carbozol-9-yl) biphenyl), MCP (1,3- ), NPD (N, N'-bis (naphthalene-1-yl) -N, N'- bis (phenyl) -2,2'- dimethylbenzidine), spiro- DPVBi (2,2 ' tetrakis (2,2-diphenylvinyl) -spiro-9,9'-bifluorene) spiro-6P (spirobifluorene), distyrylbenzene (DSB), distyrylarylene (DSA), PFO (polyfluorene) ), Or a mixture of two or more of them, and the present invention is not limited thereto.

The dopant constituting the third emission layer (EML) 434 may be pyrene-based. More specifically, the compound may be composed of a pyrene-based compound substituted with an arylamine-based compound, but is not limited thereto.

A second charge generating layer (CGL) 450 may be further formed between the second light emitting portion 420 and the third light emitting portion 430. The second charge generation layer 450 controls the charge balance between the second light emitting portion 420 and the third light emitting portion 430. The second charge generation layer (CGL) 450 may include a second N-type charge generation layer (N-CGL) and a second P-type charge generation layer (P-CGL).

The second N-type charge generation layer N-CGL serves to inject electrons into the second light emitting portion 420 and the second P-type charge generation layer P- And injects holes into the hole 430. The N-type charge generation layer (N-CGL) may be formed of an alkali metal such as lithium (Li), sodium (Na), potassium (K), or cesium (Cs), or an alkali metal such as magnesium (Mg), strontium (Sr) Ba), or an organic layer doped with an alkaline earth metal such as radium (Ra). However, the present invention is not limited thereto. The second P-type charge generation layer (P-CGL) may be formed of an organic layer containing a P-type dopant, but the present invention is not limited thereto. The first N-type charge generation layer (N-CGL) and the first P-type charge generation layer (P-CGL) of the first charge generation layer (CGL) (N-CGL) and the second P-type charge generation layer (P-CGL) of the second P-type charge generation layer (P-CGL). However, the present invention is not limited thereto. The second charge generation layer (CGL) 450 may be formed as a single layer.

The first hole transport layer (HTL) 412, the first emission layer (EML) 414, the first electron transport layer (ETL) 416, the second hole transport layer (HTL) (ETL) 436, a third electron transport layer (ETL) 436, a second electron transport layer (ETL) 434, a second electron transport layer (CGL) 440, a second charge generating layer (CGL) 450, a hole injecting layer (HIL), an electron injecting layer (EIL), a hole blocking layer (HBL) Can be said to be an organic layer. Accordingly, at least one light emitting portion may include at least one organic layer. At least two light emitting layers of the first light emitting layer (EML) 414, the second light emitting layer (EML) 424, and the third light emitting layer (EML) 434 may be composed of light emitting layers having different wavelength regions have.

Although FIG. 4 illustrates the organic light emitting device including three light emitting portions, the organic light emitting device may include four or more light emitting portions.

The organic light emitting display device according to the fourth embodiment of the present invention includes a first light emitting portion including a first light emitting layer, a second light emitting portion including a second light emitting layer, and a third light emitting portion including a third light emitting layer. And may be a white organic light emitting display device that emits white light by a light emitting portion. Therefore, when the organic light emitting diode according to the fourth embodiment of the present invention is applied to an organic light emitting display, a white organic light emitting display having four pixels of WRGB can be realized. Alternatively, when the organic light emitting diode according to the fourth embodiment of the present invention is applied to an organic light emitting display, a white organic light emitting display having three pixels of RGB can be realized. The organic light emitting display device including the organic light emitting diode according to the fourth exemplary embodiment of the present invention may include a bottom emission display device, a top emission display device, a dual emission display device, It can be applied to an automotive lighting device or the like. BACKGROUND OF THE INVENTION [0002] Vehicle lighting devices are classified into headlights, high beams, taillights, brake lights, back-up lights, brake lights, fog lamps, a turn signal light, and an auxiliary lamp. However, the present invention is not limited thereto. Alternatively, it can be variously applied to all the indicator lights used to secure the driver's field of view and to send and receive signals of the vehicle. The organic light emitting display device including the organic light emitting device according to the fourth embodiment of the present invention may be applied to a mobile, a monitor, a TV, and the like. In the OLED display device including the organic light emitting diode according to the fourth embodiment of the present invention, a pixel region may be defined on the substrate 401 by a gate line or a data line. A power supply line extending in parallel to either the gate line or the data line is located, and a switching thin film transistor connected to the gate wiring or the data line and a driving thin film transistor connected to the switching thin film transistor are disposed in each pixel region. The driving thin film transistor is connected to the first electrode 402. This will be described with reference to FIG.

5 is a diagram illustrating an example of an OLED display according to a fourth embodiment of the present invention. The organic light emitting display device of FIG. 5 does not limit the present invention, but may be applied to a top emission display device, a dual emission display device, and the like.

5, an OLED display 1000 according to a fourth exemplary embodiment of the present invention includes a substrate 401, a thin film transistor (TFT), an overcoat layer 1150, a first electrode 402, A first electrode 1180 and a second electrode 404.

The substrate 401 may be made of glass, metal, or plastic.

The thin film transistor (TFT) is formed on the substrate 401. The thin film transistor TFT may include a gate electrode 1115, a gate insulating layer 1120, a semiconductor layer 1131, a source electrode 1133, a drain electrode 1135, and a protective layer 1140.

The gate electrode 1115 is formed on the substrate 401 and is connected to the gate line. The gate electrode 1115 may be formed of one selected from the group consisting of Mo, Al, Cr, Au, Ti, Ni, Ne, And may be a multilayer composed of any one selected or an alloy thereof. Although the gate electrode 1115 is formed of two layers in FIG. 5, the present invention is not limited thereto.

The gate insulating layer 1120 is formed on the gate electrode 1115 and may be a silicon oxide film (SiOx), a silicon nitride film (SiNx), or a multilayer thereof, but is not limited thereto.

The semiconductor layer 1131 is formed on the gate insulating layer 1120 and is formed of amorphous silicon (a-Si), polycrystalline silicon (poly-Si), oxide semiconductor or organic semiconductor . When the semiconductor layer is formed of an oxide semiconductor, it may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), or the like. The etch stopper may be formed on the semiconductor layer 1131 to protect the semiconductor layer 1131, but it may be omitted depending on the configuration of the device.

The source electrode 1133 and the drain electrode 1135 may be formed on the semiconductor layer 1131. [ The source electrode 1133 and the drain electrode 135 may be formed of a single layer or a multilayer and may be formed of at least one of Mo, Al, Cr, Au, Ti, ), Neodymium (Nd), and copper (Cu), or an alloy thereof.

The passivation layer 1140 is formed on the source electrode 1133 and the drain electrode 1135 and may be formed of a silicon oxide film (SiOx), a silicon nitride film (SiNx), or a multilayer thereof. Or an acryl resin, a polyimide resin, or the like, but is not limited thereto.

Though the thin film transistor (TFT) is shown as an inverted staggered structure in FIG. 5, it may be formed in a coplanar structure.

The color filter 1145 is formed on the first passivation layer 1140 and only one sub-pixel is shown in the figure. However, the color filter 1145 may be formed on the red sub-pixel, the blue sub- . The color filter 1145 includes a red (R) color filter, a green (G) color filter, and a blue (B) color filter patterned pixel by pixel. The color filter 1145 transmits only light of a specific wavelength among the white light emitted from the light emitting portion 1180.

The overcoat layer 1150 is formed on the color filter 1145 and may be an acryl resin or a polyimide resin, a silicon oxide film (SiOx), a silicon nitride film (SiNx) It is not limited.

The first electrode 402 is formed on the overcoat layer 1150 and may be formed of ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide), which is a transparent conductive material such as TCO (Transparent Conductive Oxide) But is not limited thereto. Alternatively, the first electrode 402 may be formed of gold (Au), silver (Ag), aluminum (Al), molybdenum (Mo), magnesium (Mg), lithium (Li), calcium (Ca), lithium fluoride (Mg: LiF), indium tin oxide (ITO), indium zinc oxide (IZO), or the like, or a single layer or multiple layers . However, the present invention is not limited thereto.

The first electrode 402 is electrically connected to the drain electrode 1135 through the contact hole CH of the protective layer 1140 and a predetermined region of the overcoat layer 1150. Although the drain electrode 1135 and the first electrode 1102 are shown as being electrically connected to each other in FIG. 5, the protective layer 1140 and the overcoat layer 1150 may be electrically connected to the source electrode 1133 and the first electrode 402 may be electrically connected to each other.

The bank layer 1170 is formed on the first electrode 402 and may be formed of an organic material such as benzocyclobutene (BCB) resin, acryl resin, or polyimide resin. The bank layer 1170 is formed with a predetermined opening on the first electrode 402 so as to allow light generated from the light emitting portion 1180 to escape.

The bank layer 1170 may be formed of a photosensitive agent including a black pigment. In this case, the bank layer 1170 serves as a light shielding member.

The light emitting portion 1180 is formed on the bank layer 1170. As shown in FIG. 3, the light emitting unit 1180 includes a first light emitting unit 310 and a second light emitting unit 320 formed on the first electrode 402. 4, the light emitting unit 1180 includes a first light emitting unit 410, a second light emitting unit 420, and a third light emitting unit 430 formed on the first electrode 402, . ≪ / RTI >

The second electrode 404 is formed on the light emitting portion 1180 and may be formed of a metal such as gold (Au), silver (Ag), aluminum (Al), molybdenum (Mo), magnesium (Mg), lithium (Li) Ca), lithium fluoride (LiF), indium tin oxide (ITO), indium zinc oxide (IZO), silver-magnesium (Ag) Or alloys thereof, or may be composed of a single layer or multiple layers. However, the present invention is not limited thereto.

Further, an encapsulating layer may be further formed on the second electrode 404. The sealing layer prevents moisture from penetrating into the light emitting portion 1180. The encapsulation layer may be composed of a plurality of layers in which inorganic substances different from each other are laminated or a plurality of layers in which an inorganic material and an organic material are alternately laminated. Further, an encapsulation substrate 70 may be further formed on the encapsulation layer. The sealing substrate may be made of glass, plastic, or metal. The sealing substrate can be bonded to the sealing layer by an adhesive.

The organic light emitting display shown in FIG. 5 includes a light emitting portion 1180,

The present invention is not limited to the bottom emission display device which is driven in the direction of the first substrate 401. And a top emission display device in which light emitted from the light emitting portion 1180 travels toward the second electrode 404. In the case of the top emission type, the color filter 1145 may be formed on the second electrode 404. Alternatively, the present invention can be applied to a dual emission display device.

The inventors of the present invention have recognized that a color difference occurs depending on positions or viewing angles on the screen of the organic light emitting display device shown in Figs. 1 to 4.

Accordingly, the inventors of the present invention measured the peak wavelength (? Max) at the front and side of the organic light emitting display device in order to check the color difference according to the position or the viewing angle on the screen of the organic light emitting display device. The experimental results are described with reference to FIG. This experiment is an experiment conducted by way of example, and the contents of the experiment do not limit the present invention.

6A and 6B are diagrams showing EL spectra of an OLED display according to a fourth embodiment of the present invention.

Here, the wavelength at which the organic layers constituting the light emitting units of FIGS. 1 to 4 emit intrinsic light is referred to as PL (PhotoLuminescence). The PL (PhotoLuminescence) is affected by a cavity peak, Light emitted to the device is called EL (Electroluminescence). 6A and 6B are spectrums obtained by measuring light emitted from the organic light emitting display device using a luminance meter. The EL spectrum is expressed by the product of the PL (PhotoLuminescence) and the emittance spectrum which varies depending on the thickness and optical characteristics of the organic layers. The peak wavelength (? Max) refers to the maximum wavelength of EL (Electroluminescence). The cavity peak refers to a point at which the optical transmittance becomes maximum.

In FIGS. 6A and 6B, the abscissa represents the wavelength region (nm) of light, and the ordinate represents the intensity (a.u., arbitrary unit). The emission intensity is a relative value based on the maximum value of the EL spectrum. That is, the value of 0.8 (a.u.), which is the value of the EL spectrum of blue, is expressed as the maximum value and converted into the value of the yellow-green EL spectrum.

FIG. 6A is an EL spectrum of the organic light emitting display according to the present invention, and FIG. 6B is an EL spectrum of the organic light emitting display according to the viewing angle.

FIG. 6A is a graph illustrating a result obtained by dividing the organic light emitting display into five equal parts from the left side to the right side of the organic light emitting display with the front side of the OLED display as a center. It is measured from the left side ① of the organic light emitting display device to the right side ⑤.

As shown in FIG. 6A, it can be seen that the peak wavelength (? Max) of the EL spectrum shifts for each position of the organic light emitting display device. It can be seen that the peak wavelength (? Max) of the blue EL spectrum is 450 nm to 480 nm and the peak wavelength shifts to shorter wavelengths from the left side? To the right side? In this region. It can be seen that the peak wavelength (? Max) of the yellow-green EL spectrum is 550 nm to 570 nm, and the peak wavelength shifts to shorter wavelengths from the left side to the right side of the screen in this region.

FIG. 6B shows the results of 0 degree, 15 degrees, 30 degrees, 45 degrees, and 60 degrees measured with the front surface of the organic light emitting diode display being 0 degrees and changing the angle from the front. Here, although the measurement was performed at 0 degree, 15 degree, 30 degree, 45 degree and 60 degree, the viewing angle of the organic light emitting display device may vary depending on the user, and the measured angle does not limit the content of the present invention.

As shown in FIG. 6B, the peak wavelength (? Max) of the EL spectrum of the organic light emitting display device is shifted according to the viewing angle when the organic light emitting display device is measured according to the angle. The peak wavelength (lambda max) of the EL spectrum of blue is 450 nm to 480 nm, and it can be seen that the peak wavelength shifts to a shorter wavelength from 0 to 60 degrees in this region. The peak wavelength (lambda max) of the yellow-green EL spectrum is 550 nm to 570 nm, and the peak wavelength shifts to shorter wavelengths from 0 to 60 degrees in this region. The peak wavelength shifts to shorter wavelengths from 0 to 60 degrees lambda max) of 550 nm to 570 nm. Therefore, since the peak wavelength (lambda max) of the EL spectrum of blue and yellow-green does not change in the same manner depending on the viewing angle of the organic light emitting diode display, It is difficult to implement a screen. According to the viewing angle of the organic light emitting display, the EL spectrum of yellow-green is shifted to a shorter wavelength than that of the blue EL, so that the color coordinate changes. Accordingly, a desired color coordinate can not be realized. Therefore, a screen having a uniform color can not be realized depending on the position on the screen or the viewing angle of the organic light emitting display device.

Therefore, when the organic light emitting display device is viewed from the front and the side, a difference in the peak wavelength (? Max) of the EL spectrum occurs. Therefore, it is known that a color difference occurs depending on the position or viewing angle on the screen of the OLED display have. 6A and 6B are obtained by measuring the lower light emitting display device as an example. A top emission display device, and a dual emission display device may have color differences depending on positions or viewing angles on the screen of the organic light emitting display device.

Therefore, the inventors of the present invention investigated the cause of the difference in the peak wavelength (? Max) of the EL spectrum at the front and side of the organic light emitting display device. The peak wavelength (lambda max) of the EL spectrum of the organic light emitting display device is determined by the total thickness of the organic layers affecting the emittance peak, the content of the dopant contained in the charge generation layer, the light emitting layer The content of the dopant contained therein is affected. Therefore, the inventors of the present invention conducted experiments on the total thickness of the organic layers affecting the peak wavelength (? Max) of the EL spectrum of the organic light emitting display device, the content of the dopant contained in the charge generation layer and the content of the dopant contained in the light emitting layer Respectively.

This will be described with reference to Tables 1 to 5 and Figs. 7 to 11. Fig. FIGS. 7A to 7C and FIGS. 8A to 8C are measurement results of an organic light emitting display device including the organic light emitting device of FIG. The results of the experiments of FIGS. 9 to 11 were obtained by measuring the organic light emitting display device including the organic light emitting device of FIG. . Tables 1, 2, 7A to 7C, and 8A to 8C are obtained by measuring the top emission display device as an example. The bottom emission display device and the dual emission display device are influenced by the peak wavelength (? Max) of the EL spectrum according to the total thickness of the organic layers and the content of the dopant contained in the light emitting layer, The same result can be measured.

Table 1 below shows the peak wavelength (? Max) of the EL spectrum of the organic light emitting display according to the total thickness of the organic layer.

Table 1

In Table 1, the total thickness of the organic layer refers to the thickness of the organic layers located between the first electrode and the second electrode except for the thicknesses of the first electrode and the second electrode. The total thickness of the organic layers is, for example, 290 nm in the case of red, and the thickness of the organic layers does not limit the scope of the present invention. 290 nm is expressed as 0 nm on the basis of 290 nm, and +5 nm is 295 nm in which the thickness is increased from 290 nm to 5 nm. -5 nm is 285 nm which is formed by thinning 5 nm from 290 nm. And, for example, the total thickness of the organic layers may be 230 nm in case of green, and this thickness does not limit the content of the present invention. 230 nm is expressed as 0 nm on the basis of 230 nm, and +5 nm is 235 nm as the thickness is increased from 230 nm to 5 nm. -5 nm is 225 nm which is formed by thinning 5 nm at 230 nm. For example, if the total thickness of the organic layers is blue, the thickness may be 180 nm, and the thickness does not limit the scope of the present invention. 180 nm is expressed as 0 nm on the basis of 180 nm, and +5 nm is 185 nm when the thickness is further increased from 180 nm to 5 nm. -5 nm is 175 nm which is formed by thinning from 180 nm to 5 nm.

As shown in Table 1, the peak wavelength (lambda max) of the red EL spectrum has a range of 632 nm to 640 nm in accordance with the change of the total thickness of the organic layers. When the total thickness of the organic layers is increased, the peak wavelength of red is changed from 640 nm to 644 nm to +440 nm when the total thickness of the organic layers is thicker than 640 nm which is the peak wavelength (? Max) of the red EL spectrum when the total thickness of the organic layers is 0 nm. 4 nm. When the total thickness of the organic layers is reduced, when the total thickness of the organic layers is 0 nm, the peak wavelength of red shifts from 640 nm to 632 nm when the total thickness of the organic layers becomes thinner with reference to the peak wavelength (? Max) of 640 nm of the red EL spectrum A difference in peak wavelength of -8 nm occurs. Accordingly, it can be seen that the shift range of the peak wavelength of red is -8 nm to +4 nm depending on the change of the total thickness of the organic layers.

As shown in Table 1, the peak wavelength (? Max) of the EL spectrum of green has a range of 540 nm to 552 nm in accordance with the change of the total thickness of the organic layers. When the total thickness of the organic layers is increased, the peak wavelength of green (green) is changed from 544 nm to 552 nm to +54 nm when the total thickness of the organic layers is 0 nm, 8 nm. When the total thickness of the organic layers is decreased, the peak wavelength of green (Green) shifts from 544 nm to 540 nm when the overall thickness of the organic layers is thinner than the peak wavelength (? Max) of 544 nm of the EL spectrum of green when the total thickness of the organic layers is 0 nm A difference in peak wavelength of -4 nm occurs. Therefore, it can be seen that the shift range of the peak wavelength of green is from -4 nm to +8 nm according to the change of the total thickness of the organic layers.

As shown in Table 1, the peak wavelength? Max of the EL spectrum of blue has a range of 456 nm to 460 nm according to the change of the total thickness of the organic layers. When the total thickness of the organic layers is increased, the peak wavelength of blue shifts from 472 nm to 476 nm when the overall thickness of the organic layers is thicker than the peak wavelength (? Max) of the EL spectrum of blue when the total thickness of the organic layers is 0 nm Resulting in a difference in peak wavelength of +4 nm. When the total thickness of the organic layers is reduced, the peak wavelength of blue (472 nm) is shifted from 472 nm to 472 nm when the total thickness of the organic layers is 47 nm, which is the peak wavelength (? Max) of the EL spectrum of blue when the total thickness of the organic layers is 0 nm . Therefore, it can be seen that the shift range of the peak wavelength of blue is +4 nm depending on the total thickness of the organic layers.

In this case, since the peak wavelength shifts to a long wavelength on the right side, the color coordinate changes and the desired color can not be expressed. In the case of " - ", the peak wavelength is shifted to the short wavelength side to the left, so that the color coordinate changes and the desired color can not be expressed. Therefore, it can be seen that the total thickness of the organic layer is a factor that affects the emittance peak in the EL spectrum, and the EL spectrum varies depending on the thickness of the whole organic layer. That is, the shift range of the peak wavelength (? Max) of the EL spectrum is ± 4 nm to ± 8 nm according to the total thickness of the organic layer.

7A to 7C are diagrams showing EL spectra according to the total thickness of the organic layer.

7A to 7C, the abscissa represents the wavelength region (nm) of light, and the ordinate represents the intensity (au, arbitrary unit). The luminescence intensity is based on the maximum value of the EL spectrum And is expressed as a relative value.

7A shows an EL spectrum of Red. As shown in FIG. 7A, it can be seen that the difference in the peak wavelength (max) of the EL spectrum of the organic light emitting display device is caused by the change in the total thickness of the organic layers. That is, when the total thickness of the organic layers is thicker than the total thickness of the organic layer of 290 nm at a peak wavelength based on 0 nm (here, the total thickness of the organic layer is assumed to be 290 nm), the peak wavelength? Max of the EL spectrum of Red is, . ≪ / RTI > Therefore, it can be seen that the peak wavelength? Max of the red EL spectrum shifts by +4 nm. When the total thickness of the organic layers is thinner than the total thickness of the organic layer of 290 nm at a peak wavelength based on 0 nm (here, the total thickness of the organic layer is assumed to be 290 nm), the peak wavelength? Max of the EL spectrum of Red is . ≪ / RTI > Therefore, it can be seen that the peak wavelength (? Max) of the red EL spectrum shifts by -8 nm. From this, it can be seen that the difference in the peak wavelength of the red EL spectrum is -8 nm to +4 nm depending on the change in the total thickness of the organic layers.

7B shows an EL spectrum of green. As shown in FIG. 7B, it can be seen that the difference in the peak wavelength (? Max) of the EL spectrum of the organic light emitting display device occurs with the change in the total thickness of the organic layers. That is, when the total thickness of the organic layers is thicker than 230 nm, which is the total thickness of the organic layer, at the peak wavelength based on 0 nm (here, the total thickness of the organic layer is assumed to be 230 nm), the peak wavelength? Max of the EL spectrum of green . ≪ / RTI > Therefore, it can be seen that the peak wavelength? Max of the EL spectrum of green shifts by +8 nm. When the total thickness of the organic layers is thinner than 230 nm, which is the total thickness of the organic layer, at the peak wavelength based on 0 nm (here, the total thickness of the organic layer is assumed to be 230 nm), the peak wavelength? Max of the EL spectrum of green . ≪ / RTI > Therefore, it can be seen that the peak wavelength? Max of the EL spectrum of green shifts by -4 nm. From this, it can be seen that the difference in the peak wavelength of the EL spectrum of green is from -4 nm to +8 nm according to the change of the total thickness of the organic layers.

FIG. 7C shows an EL spectrum of blue. As shown in FIG. 7C, it can be seen that the difference in the peak wavelength (? Max) of the EL spectrum of the organic light emitting display device occurs with the change in the total thickness of the organic layers. That is, when the total thickness of the organic layers is thicker than 180 nm, which is the total thickness of the organic layer, at the peak wavelength based on 0 nm (here, the total thickness of the organic layer is assumed to be 180 nm), the peak wavelength? Max of the EL spectrum of blue . ≪ / RTI > Therefore, it can be seen that the peak wavelength? Max of the blue EL spectrum shifts by +4 nm. When the total thickness of the organic layers is thinner than 180 nm, which is the total thickness of the organic layer, at the peak wavelength based on 0 nm (here, the total thickness of the organic layer is assumed to be 180 nm), the peak wavelength? Max of the EL spectrum of blue . It can be seen from this that the difference in the peak wavelength of the EL spectrum of blue is +4 nm according to the change of the total thickness of the organic layers. Therefore, it can be understood that the shift range of the peak wavelength (? Max) of the EL spectrum is ± 4 nm to ± 8 nm according to the total thickness of the organic layer.

Among the factors affecting the peak wavelength (? Max) of the EL spectrum of the organic light emitting display device, the content of the dopant contained in the light emitting layer will be described with reference to Table 2 and Figs. 8A to 8C.

Table 2 below shows the peak wavelength (? Max) of the EL spectrum of the organic light emitting display according to the content of the dopant contained in the light emitting layer.

Table 2

In Table 2, the content of the dopant contained in the light emitting layer is 2% to 16% of the host, and the peak wavelength (? Max) of red, green and blue EL spectra is measured. The content of the dopant contained in the red, green and blue light emitting layers does not limit the content of the present invention.

As shown in Table 2, the content of the dopant contained in the red light emitting layer was 2%, 4% and 6%. The peak wavelength (? Max) of the EL spectrum of Red has a range of 636 nm to 640 nm depending on the content of the dopant contained in the red light emitting layer. When the content of the dopant contained in the red light emitting layer is smaller than the content of the red light emitting layer when the reference is 640 nm which is the peak wavelength (? Max) of the EL spectrum of Red when the content of the dopant contained in the red light emitting layer is 4% 6%, the peak wavelength does not move from 640 nm to 640 nm. When 640 nm, which is the peak wavelength (? Max) of the red EL spectrum when the content of the dopant contained in the red light emitting layer is 4%, is used as a reference, the amount of the dopant contained in the red When the content is 2%, the peak wavelength shifts from 640 nm to 636 nm, resulting in a difference in peak wavelength of -4 nm. Therefore, it can be seen that the shift range of the peak wavelength of the red EL spectrum is -4 nm according to the content of the dopant contained in the red light emitting layer.

The dopants contained in the green light emitting layer were composed of 8%, 12% and 16%. The peak wavelength? Max of the EL spectrum of green has a range of 544 nm to 548 nm depending on the content of the dopant contained in the green light emitting layer. When the content of the dopant contained in the green light emitting layer is smaller than that of the green light emitting layer when the reference is 544 nm which is the peak wavelength? Max of the EL spectrum of the green when the content of the dopant contained in the green light emitting layer is 12% 16%, the difference in peak wavelength between 544 nm and 548 nm is + 4 nm. When 544 nm, which is the peak wavelength (? Max) of the EL spectrum of the green when the content of the dopant contained in the green light emitting layer is 12%, is used as a reference, the amount of the dopant contained in the green When the content is 8%, the peak wavelength does not move from 544 nm to 544 nm. Therefore, it can be seen that the shift range of the peak wavelength of the EL spectrum of green is +4 nm according to the content of the dopant contained in the green light emitting layer.

The dopant content in the blue light emitting layer was 2%, 4% and 8%. The peak wavelength? Max of the EL spectrum of blue has a range of 472 nm to 476 nm depending on the content of the dopant contained in the blue light emitting layer. When the content of the dopant contained in the blue light emitting layer is smaller than that of 472 nm which is the peak wavelength (? Max) of the EL spectrum of the blue when the content of the dopant contained in the blue light emitting layer is 4% 8%, the difference in peak wavelength between 472nm and 476nm is + 4nm. When the peak wavelength (lambda max) of the EL spectrum of 472 nm when the content of the dopant contained in the blue luminescent layer is 12% is taken as a reference, the ratio of the dopant contained in the blue luminescent layer When the content is 2%, the peak wavelength does not move from 472 nm to 472 nm. Therefore, it can be seen that the shift range of the peak wavelength of the EL spectrum of blue is +4 nm depending on the content of the dopant contained in the blue light emitting layer.

8A to 8C are diagrams showing EL spectra of the organic light emitting display according to the content of the dopant contained in the light emitting layer.

8A to 8C, the abscissa represents the wavelength region (nm) of light, and the ordinate represents the intensity (au, arbitrary unit). The emission intensity is a relative value based on the maximum value of the EL spectrum.

8A shows an EL spectrum of red. As shown in FIG. 8A, it can be seen that the difference in the peak wavelength (max) of the EL spectrum of the organic light emitting display device occurs depending on the content of the dopant contained in the light emitting layer. That is, when the content of the dopant is increased at the peak wavelength based on the content of the dopant contained in the red light emitting layer being 4%, the peak wavelength (max) of the EL spectrum of red is hardly shifted . When the content of the dopant decreases at the peak wavelength based on the content of the dopant contained in the red light emitting layer of 4%, the peak wavelength (max) of the red EL spectrum shifts to the left side. . Therefore, the peak wavelength? Max of the red EL spectrum is shifted by +4 nm. From this, it can be seen that the shift range of the peak wavelength of the red EL spectrum is +4 nm depending on the content of the dopant contained in the light emitting layer.

Fig. 8B shows EL spectra of green. As shown in FIG. 8B, it can be seen that the difference in the peak wavelength (max) of the EL spectrum of the organic light emitting display device occurs depending on the content of the dopant contained in the light emitting layer. That is, when the content of the dopant is increased at the peak wavelength based on the content of the dopant contained in the green light emitting layer being 12%, the peak wavelength (max) of the EL spectrum of green is shifted to the right side . Therefore, the peak wavelength? Max of the EL spectrum of green is shifted by +4 nm. When the content of the dopant is decreased at the peak wavelength based on the content of the dopant contained in the green light emitting layer being 12%, the peak wavelength? Max of the EL spectrum of green does not substantially move . From this, it can be seen that the shift range of the peak wavelength of the EL spectrum of green is +4 nm depending on the content of the dopant contained in the light emitting layer.

FIG. 8C shows an EL spectrum of blue. As shown in FIG. 8C, it can be seen that the difference in the peak wavelength (max) of the EL spectrum of the organic light emitting display device occurs depending on the content of the dopant contained in the light emitting layer. That is, when the content of the dopant is increased at the peak wavelength based on the content of the dopant contained in the blue light emitting layer being 4%, the peak wavelength? Max of the blue EL spectrum is shifted to the right side . Therefore, the peak wavelength? Max of the blue EL spectrum is shifted by +4 nm. And, when the content of the dopant is decreased at the peak wavelength based on the content of the dopant contained in the blue light emitting layer being 4%, the peak wavelength (max) of the EL spectrum of blue does not substantially move . From this, it can be seen that the shift range of the peak wavelength of the EL spectrum of blue is +4 nm depending on the content of the dopant contained in the light emitting layer.

As described in Table 1, Table 2, Figs. 7A to 7C, and 8A to 8C, in the organic light emitting display device to which the organic light emitting diode of Fig. 1 is applied, the total thickness of the organic layers and the dopant content It was found that the peak wavelength of the EL spectrum of the light emitting display device was shifted. The organic light emitting display device of FIG. 2 may be substantially the same. In the organic light emitting display device to which the organic light emitting diode of FIG. 2 is applied, the peak wavelength of the EL spectrum of the organic light emitting display device is changed according to the total thickness of the organic layers, the content of the dopant included in the light emitting layer, and the content of the dopant contained in the charge generating layer. Can change. Therefore, the shift of the peak wavelength of the EL spectrum of the organic light emitting display device according to the content of the dopant contained in the charge generation layer can be substantially the same as that described in the following Table 5 and Fig.

The total thickness of the organic layers affecting the peak wavelength (? Max) of the EL spectrum of the bottom emission organic light emitting display device including the organic light emitting element of FIG. 4, the content of the dopant contained in the charge generation layer, Will be described with reference to Tables 3 to 5 and Figs. 9 to 11. Fig. Tables 3 to 5 and Figs. 9 to 11 are obtained by measuring the lower light emitting display device as an example. In the top emission display device and the dual emission display device, the peak wavelength of the EL spectrum (for example, the total thickness of the organic layers, the content of the dopant included in the charge generation layer, and the content of the dopant included in the light emitting layer) lt; / RTI > max), substantially the same result can be measured.

Table 3 below shows the peak wavelength (? Max) of the EL spectrum of the organic light emitting display according to the total thickness of the organic layers.

Table 3

In Table 3, the total thickness of the organic layer refers to the thickness of the organic layers between the first electrode and the second electrode except for the thicknesses of the first electrode and the second electrode. The total thickness of the organic layers may be 450 nm, for example, and this thickness does not limit the content of the present invention. 450 nm is expressed as 0 nm on the basis of 450 nm, and +3 nm is 453 nm when the thickness is further increased to 3 nm by 450 nm. +5 nm is formed at 450 nm to be 5 nm thick and becomes 455 nm. +8 nm is a thicker 8 nm at 450 nm, which is 458 nm. The thickness of -2 nm is 450 nm and the thickness of 2 nm is 448 nm. -4 nm is formed with a thickness of 4 nm at 450 nm, which is 446 nm.

As shown in Table 3, the peak wavelength (? Max) of the EL spectrum of the blue organic light emitting display device ranges from 456 nm to 460 nm depending on the total thickness of the organic layers. When the total thickness of the organic layers is 460 nm, which is the peak wavelength (? Max) of the EL spectrum of blue when the total thickness of the organic layers is 0 nm, the peak wavelength does not move from 460 nm to 460 nm when the total thickness of the organic layers becomes thick. When the thickness of the organic layers is 0 nm and the peak wavelength (? Max) of the blue EL spectrum is 460 nm, when the total thickness of the organic layers is reduced, the peak wavelength shifts from 460 nm to 456 nm, . Therefore, it can be seen that the shift range of the peak wavelength of blue is -4 nm according to the total thickness of the organic layers.

The peak wavelength (? Max) of the yellow spectrum of the yellow-green EL spectrum is in the range of 560 nm to 568 nm in accordance with the change of the total thickness of the organic layers. When the total thickness of the organic layers is increased, when the total thickness of the organic layers is 0 nm, when the total thickness of the organic layers is increased, the peak wavelength is increased from 560 nm to 564 nm to +4 nm There is a difference in peak wavelength of the light. Alternatively, when the total thickness of the organic layers is 0 nm, when the total thickness of the organic layers is 560 nm, the peak wavelength varies from 560 nm to 568 nm with a peak wavelength of +8 nm. When the total thickness of the organic layers is 0 nm, the peak wavelength does not shift from 560 nm to 560 nm when the total thickness of the organic layers is reduced when the total thickness of the organic layers is 544 nm. Therefore, it can be seen that the shift range of the peak wavelength of yellow-green is +4 nm to +8 nm depending on the total thickness of the organic layers.

In this case, since the peak wavelength shifts to a long wavelength on the right side, the color coordinate changes and the desired color can not be expressed. In the case of "-", the peak wavelength is shifted to the short-wavelength side to the left, so that the color coordinate changes and the desired color can not be expressed. Therefore, it can be seen that the total thickness of the organic layer is a factor that affects the emittance peak in the EL spectrum, and the EL spectrum varies depending on the thickness of the whole organic layer. That is, the shift range of the peak wavelength (? Max) of the EL spectrum is ± 4 nm to + 8 nm according to the total thickness of the organic layer.

9 is a view showing an EL spectrum according to the total thickness of the organic layer.

In FIG. 9, the horizontal axis represents the wavelength region (nm) of light, and the vertical axis represents intensity (a.u., arbitrary unit). The emission intensity is a relative value based on the maximum value of the EL spectrum. That is, the value of 0.8 (a.u.), which is the value of the EL spectrum of blue, is expressed as the maximum value and converted into the value of the yellow-green EL spectrum.

As shown in FIG. 9, it can be seen that the difference in the peak wavelength (? Max) of the EL spectrum of the organic light emitting display device is caused by the change in the total thickness of the organic layers. That is, when the total thickness of the organic layers is thicker than the total organic layer thickness of 450 nm at the peak wavelength based on 0 nm (here, the total thickness of the organic layer is assumed to be 450 nm), the peak wavelength? Max of the EL spectrum of blue . When the total thickness of the organic layers is thinner than the total organic layer thickness of 450 nm at a peak wavelength based on 0 nm (here, the total thickness of the organic layer is assumed to be 450 nm), the peak wavelength? Max of the EL spectrum of blue . ≪ / RTI > Therefore, it can be seen that the peak wavelength (? Max) of the blue EL spectrum shifts by -4 nm. From this, it can be seen that the shift range of the peak wavelength of the blue EL spectrum is -4 nm according to the change of the total thickness of the organic layers.

Then, when the total thickness of the organic layers is thicker than the total thickness of the organic layers at a peak wavelength based on 0 nm (here, the total thickness of the organic layer is assumed to be 450 nm), the peak wavelength of the EL spectrum of yellow- lambda max is shifted to the right. Therefore, it can be seen that the peak wavelength? Max of the yellow spectrum of the yellow-green shifts from +4 nm to +8 nm. When the total thickness of the organic layers is thinner than the total thickness of the organic layer of 450 nm at the peak wavelength based on 0 nm (here, the total thickness of the organic layer is assumed to be 450 nm), the peak wavelength of the EL spectrum of yellow- lambda max) does not move. From this, it can be seen that the shift range of the peak wavelength of the yellow-green EL spectrum is +4 nm to +8 nm according to the change of the total thickness of the organic layers.

Among the factors affecting the peak wavelength (? Max) of the EL spectrum of the organic light emitting display device, the content of the dopant contained in the light emitting layer will be described with reference to Table 4 and FIG.

Table 4 below shows the peak wavelength (? Max) of the EL spectrum of the organic light emitting display according to the content of the dopant contained in the light emitting layer.

Table 4

In Table 4, the light emitting layer is a yellow-green light emitting layer, and the content of the dopant contained in the light emitting layer is 8%, 12%, 16%, 20% And the wavelength (? Max) was measured. The measurement of the yellow-green light-emitting layer herein indicates that the content of the dopant contained in the yellow-green light-emitting layer is larger than that of the blue light-emitting layer, It is because.

As shown in Table 4, the peak wavelength (? Max) of the EL spectrum of the organic light emitting display device of yellow-green according to the content of the dopant contained in the light emitting layer has a range of 556 nm to 568 nm. When the content of the dopant contained in the yellow-green light emitting layer is 16%, when the content of the dopant contained in the yellow-green light emitting layer is 20%, the peak wavelength is 564 nm To 568 nm, resulting in a difference in peak wavelength of +4 nm. When the content of the dopant included in the yellow-green light-emitting layer is 16%, the content of the dopant contained in the yellow-green light-emitting layer is 12% Lt; RTI ID = 0.0 > 564nm < / RTI > When the content of the dopant contained in the yellow-green light-emitting layer is 16% and the content of the dopant contained in the yellow-green light-emitting layer is 8% based on 564 nm, Shifts from 564 nm to 556 nm and a difference in peak wavelength of -8 nm occurs. Accordingly, it can be seen that the shift range of the peak wavelength of the EL spectrum of yellow-green is -8 nm to +4 nm depending on the content of the dopant contained in the yellow-green light emitting layer. The content of the dopant contained in the yellow-green light emitting layer does not limit the content of the present invention.

10 is a graph showing an EL spectrum of an organic light emitting display according to the content of a dopant contained in a light emitting layer.

10, the horizontal axis represents the wavelength region (nm) of light, and the vertical axis represents intensity (a.u., arbitrary unit). The emission intensity is a relative value based on the maximum value of the EL spectrum.

As shown in FIG. 10, the difference in the peak wavelength (max) of the EL spectrum of the organic light emitting display device occurs depending on the content of the dopant contained in the yellow-green light emitting layer. That is, when the content of the dopant contained in the yellow-green light emitting layer is 16%, when the content of the dopant is increased, the EL spectrum of the organic light emitting display device of the yellow- It can be seen that the peak wavelength? Max shifts to the right. When the content of the dopant is decreased, the peak wavelength? Max of the EL spectrum of the organic light emitting display device of yellow-green is shifted to the left. Therefore, it can be seen that the difference in the peak wavelength (? Max) of the EL spectrum of yellow-green is -8 nm to +4 nm.

Among the factors affecting the peak wavelength (? Max) of the EL spectrum of the organic light emitting display device, the content of the dopant contained in the P-type charge generation layer is described with reference to Table 5 and FIG.

Table 5 below shows the peak wavelength (? Max) of the EL spectrum of the organic light emitting display according to the content of the dopant contained in the P-type charge generation layer.

Table 5

In Table 5, the first charge generating layer is a charge generating layer located between the first light emitting portion and the second light emitting portion, and the second charge generating layer is a charge generating layer located between the second light emitting portion and the third light emitting portion. The first charge generating layer and the second charge generating layer are P-type charge generating layers (P-CGL). The content of the dopant contained in the P-type charge generation layer (P-CGL) was 3%, 5%, 8%, and 10% in the first charge generation layer, 8%, and 10%, respectively. The content of the dopant contained in the P-type charge generation layer (P-CGL) is greater than the content of the dopant contained in the N-type charge generation layer (N-CGL), so that the emittance peak do. The content of the dopant in the first P-type charge generation layer and the second P-type charge generation layer does not limit the content of the present invention.

As shown in Table 5, the peak wavelength? Max of the EL spectrum of blue has a range of 456 nm to 460 nm according to the content of the dopant contained in the P-type charge generation layer (P-CGL). When the content of the dopant included in the first P-type charge generation layer is 8% and the content of the dopant contained in the second P-type charge generation layer is 8%, when the reference is 460 nm, the first P- And the content of the dopant contained in the second P-type charge generation layer is 8%, the peak wavelength shifts from 460 nm to 456 nm, which results in a difference in peak wavelength of -4 nm. When the content of the dopant contained in the first P-type charge generation layer is 8% and the content of the dopant contained in the second P-type charge generation layer is 8%, when the reference is 460 nm, the first P- When the content of the dopant contained in the generation layer is 10% and the content of the dopant contained in the second P-type charge generation layer is 10%, the peak wavelength shifts from 460 nm to 456 nm, which results in a difference in peak wavelength of -4 nm. When the content of the dopant contained in the first P-type charge generation layer is 8% and the content of the dopant contained in the second P-type charge generation layer is 8%, when the reference is 460 nm, the first P- If the content of the dopant contained in the generation layer is 8% and the content of the dopant contained in the second P-type charge generation layer is 5%, the peak wavelength does not move from 460 nm to 460 nm. When the content of the dopant contained in the first P-type charge generation layer is 8% and the content of the dopant contained in the second P-type charge generation layer is 8%, when the reference is 460 nm, the first P- If the content of the dopant contained in the generation layer is 5% and the content of the dopant contained in the second charge generation layer is 5%, the peak wavelength shifts from 460 nm to 456 nm, and a difference in peak wavelength of -4 nm occurs. When the content of the dopant contained in the first P-type charge generation layer is 8% and the content of the dopant contained in the second P-type charge generation layer is 8%, when the reference is 460 nm, the first P- When the content of the dopant contained in the generation layer is 3% and the content of the dopant contained in the second charge generation layer is 3%, the peak wavelength does not move from 460 nm to 460 nm. Therefore, it can be seen that the shift range of the peak wavelength of the blue EL spectrum is -4 nm depending on the content of the dopant contained in the first P-type charge generation layer (P-CGL) and the second P-type charge generation layer .

As shown in Table 5, the peak wavelength (lambda max) of the EL spectrum of yellow-green according to the content of the dopant contained in the P-type charge generation layer (P-CGL) was 556 nm to 564 nm Lt; / RTI > When the content of the dopant contained in the first P-type charge generation layer is 8% and the content of the dopant included in the second P-type charge generation layer is 8%, when the reference is 560 nm, the first P- And the content of the dopant contained in the second P-type charge generation layer is 8%, the peak wavelength shifts from 560 nm to 556 nm, resulting in a difference in peak wavelength of -4 nm. When the content of the dopant contained in the first P-type charge generation layer is 8% and the content of the dopant contained in the second P-type charge generation layer is 8%, when the reference is 560 nm, the first P- If the content of the dopant contained in the generation layer is 10% and the content of the dopant contained in the second P-type charge generation layer is 10%, the peak wavelength does not move from 560 nm to 560 nm. When the content of the dopant contained in the first P-type charge generation layer is 8% and the content of the dopant contained in the second P-type charge generation layer is 8%, when the reference is 560 nm, the first P- If the content of the dopant contained in the generation layer is 8% and the content of the dopant contained in the second P-type charge generation layer is 5%, the peak wavelength shifts from 560 nm to 556 nm, which causes a difference in peak wavelength of -4 nm. When the content of the dopant contained in the first P-type charge generation layer is 8% and the content of the dopant contained in the second P-type charge generation layer is 8%, when the reference is 560 nm, the first P- When the content of the dopant contained in the generation layer is 5% and the content of the dopant contained in the second P-type charge generation layer is 5%, the peak wavelength shifts from 560 nm to 556 nm, and a difference in peak wavelength of -4 nm occurs. When the content of the dopant contained in the first P-type charge generation layer is 8% and the content of the dopant contained in the second P-type charge generation layer is 8%, when the reference is 560 nm, the first P- If the content of the dopant contained in the generation layer is 3% and the content of the dopant contained in the second P-type charge generation layer is 3%, the peak wavelength shifts from 560 nm to 564 nm, which results in a difference in peak wavelength of +4 nm. Accordingly, the shift range of the peak wavelength of the yellow-green EL spectrum depends on the content of the dopant contained in the first P-type charge generation layer (P-CGL) and the second P-type charge generation layer is -4 nm To +4 nm.

11 is a diagram showing an EL spectrum of an organic light emitting display according to the content of a dopant contained in a charge generation layer.

11, the horizontal axis represents the wavelength region (nm) of light, and the vertical axis represents intensity (a.u., arbitrary unit). The emission intensity is a relative value based on the maximum value of the EL spectrum. That is, the value of 0.8 (a.u.), which is the value of the EL spectrum of blue, is expressed as the maximum value and converted into the value of the yellow-green EL spectrum.

11, the content of the dopant contained in the first P-type charge generation layer (P-CGL) of the first charge generation layer is 10%, the content of the second P-type charge generation layer (P-CGL) has a dopant content of 10%. (2) shows that the content of the dopant contained in the first P-type charge generation layer (P-CGL) of the first charge generation layer is 10%, the content of the second P-type charge generation layer CGL) has a dopant content of 8%. (3) shows that the content of the dopant contained in the first P-type charge generation layer (P-CGL) of the first charge generation layer is 8%, the content of the second P-type charge generation layer CGL) has a dopant content of 8%. (4) shows that the content of the dopant contained in the first P-type charge generation layer (P-CGL) of the first charge generation layer is 8%, the content of the second P-type charge generation layer CGL) has a dopant content of 5%. (5) shows that the content of the dopant contained in the first P-type charge generation layer (P-CGL) of the first charge generation layer is 5%, the content of the second P-type charge generation layer CGL) has a dopant content of 5%. (6) shows that the content of the dopant contained in the first P-type charge generation layer (P-CGL) of the first charge generation layer is 3%, the content of the second P-type charge generation layer CGL) has a dopant content of 3%.

As shown in FIG. 11, it can be seen that the peak wavelength (? Max) of the EL spectrum of the organic light emitting display varies depending on the content of the dopant contained in the charge generation layer. (3), it is understood that the peak wavelength? Max of the EL spectrum of the organic light emitting display device in the blue region shifts to the left. Therefore, it can be seen that a difference of -4 nm occurs in the peak wavelength (? Max) of the EL spectrum of the organic light emitting display device in the blue region.

It can be seen that the peak wavelength (max) of the EL spectrum of the organic light emitting display device in the yellow-green region shifts to the left side and the right side with reference to (3). Therefore, it can be seen that a difference of +/- 4 nm occurs in the peak wavelength (? Max) of the EL spectrum of the organic light emitting display device in the yellow-green region.

As described in Tables 3 to 5, Figs. 9 and 11, the total thickness of the organic layers, the content of the dopant contained in the light emitting layer, and the amount of the dopant contained in the charge generation layer The peak wavelength of the EL spectrum of the organic light emitting display device was shifted according to the content of the dopant. The organic light emitting display device of FIG. 3 may be substantially the same.

As described in Tables 1 to 5 and FIGS. 7 to 11, the present inventors examined the causes of color differences depending on positions or viewing angles of organic light emitting display devices. That is, in the organic light emitting diode display having three pixels of R, G, and B, the peak wavelength shift of the EL spectrum of red (red), green (green), and blue (blue) according to the total thickness of the organic layers and the content of the dopant contained in the light emitting layer It was found that the range was ± 4 nm to ± 8 nm. The total thickness of the organic layers, the content of the dopant contained in the light emitting layer, and the content of the dopant contained in the charge generation layer in the organic light emitting display device composed of WRGB four pixels including the white organic light emitting element having three light emitting portions It was found that the shift range of the peak wavelength of the EL spectrum of blue and yellow-green was ± 4 nm to ± 8 nm.

From the above results, it was found that the peak wavelength (? Max) of the EL spectrum of the organic light emitting display device changes according to the total thickness of the organic layers, the content of the dopant contained in the charge generation layer, and the content of the dopant contained in the light emitting layer. Therefore, in order to provide a screen having a uniform color at the center or on the front face of the organic light emitting display device, the EL (electroluminescence) display device according to the entire thickness of the organic layers, the content of the dopant included in the charge generation layer, It is necessary to consider the range of movement of the peak wavelength (? Max) of the spectrum. That is, in order to improve the color difference caused by the position or viewing angle of the organic light emitting display device, it is necessary to consider the organic layer in consideration of the total thickness of the organic layers, the content of the dopant contained in the charge generation layer, The shift range of the peak wavelength (? Max) of the EL spectrum of the light emitting display device should be set. The results of measurement of the EL spectrum of the organic light emitting display device reflecting the above results will be described with reference to FIG.

12 is a diagram showing an EL spectrum according to an embodiment of the present invention.

12, the solid line and the dotted line indicate the EL spectrum measured at the front face of the organic light emitting display device. The EL spectra of the solid line and the dotted line are measured by varying the total thickness of the organic layers affecting the EL spectrum, the content of the dopant contained in the light emitting layer, and the content of the dopant contained in the charge generation layer. FIG. 12 shows the EL spectrum of the organic light emitting display device to which the organic light emitting diode of FIG. 4 is applied.

In FIG. 12, A indicates the reference of the peak wavelength (? Max) of the EL spectrum of blue, and the peak wavelength (? Max) of the EL spectrum of blue is shifted to the left and right with reference to A Able to know. Therefore, the shift range (indicated by a in Fig. 12) of the peak wavelength? Max in which no color difference occurs should be set in consideration of the shift range of the peak wavelength (? Max) of the blue EL spectrum. For example, when the first light emitting portion and the third light emitting portion include a blue light emitting layer, the peak wavelength? Max of the EL spectrum of the organic light emitting display device emitted from the first light emitting portion and the third light emitting portion is set to a predetermined It should be set so as to satisfy X 10 nm or less, which is 10 nm larger than the peak wavelength (X nm) to 10 nm or less. Preferably, the peak wavelength (? Max) of the EL spectrum of the organic light emitting display device emitted from the first light emitting portion and the third light emitting portion is in the range of 4 nm to 4 nm smaller than the predetermined peak wavelength (Xnm) Or 8 nm in the small range and 8 nm in the large range. When the first light emitting portion and the third light emitting portion include a blue light emitting layer, the peak wavelength (lambda max) of the EL spectrum of the organic light emitting display device emitted from the first light emitting portion and the third light emitting portion is 450 nm to 480 nm . In the case of an organic light emitting display device including two light emitting portions, the peak wavelength? Max of the EL spectrum of the organic light emitting display device emitted from the first light emitting portion or the second light emitting portion is a predetermined peak wavelength (X nm) 10 nm or less and 10 nm or less in the range of 10 nm or less. Preferably, the peak wavelength (? Max) of the EL spectrum of the organic light emitting display device emitted from the first light emitting portion or the second light emitting portion is in the range of 4 nm to 4 nm smaller than the predetermined peak wavelength (Xnm) Or 8 nm or less and 8 nm or less X 8 nm or less. Therefore, by setting the shift range of the peak wavelength (? Max) of the EL spectrum of the organic light emitting display device, it is possible to improve the color difference caused by the change of the peak wavelength (? Max) have. Further, the organic light emitting display of the present invention has a PWES (Peak Wavelength of EL Spectrum) structure in which the shift range of the peak wavelength (? Max) of the EL spectrum is set so that the color difference Can be improved. The peak wavelength (? Max) of the EL spectrum of the organic light emitting display device emitted from the at least one light emitting portion is in a range of 10 nm to 10 nm larger than a predetermined peak wavelength (X nm) in the PWES (Peak Wavelength of EL Spectrum) X X 10 nm or less.

The light emitting layer that emits blue light is an example for explaining the present invention and may be composed of one of a light emitting layer that emits a deep blue light and a light emitting layer that emits sky blue light. When a light emitting layer that emits deep blue light and a light emitting layer that emits sky blue are formed, the peak wavelength of the EL spectrum of the organic light emitting display device emitted from the light emitting portion including the light emitting layer, ) Should be set within a range of 10 nm smaller than the predetermined peak wavelength (X nm) to 10 nm smaller than X ± 10 nm. 1 to 3, the peak wavelength (max) of the EL spectrum of the organic EL display device, which emits light from the light emitting portion, is different from that of the organic EL display device It should be set within a range of X 10 nm or less, which is a range of 10 nm smaller than a predetermined peak wavelength (X nm) to 10 nm larger.

In FIG. 12, B indicates the reference of the peak wavelength (? Max) of yellow-green, and the peak wavelength? Max of the yellow spectrum of yellow-green It moves to the left and right. Therefore, it is necessary to set the shift range (indicated by a in FIG. 12) of the peak wavelength (? Max) in which no color difference occurs in consideration of the shift range of the peak wavelength (? Max) of the EL spectrum of yellow- do. For example, when the second light emitting portion includes a yellow-green light emitting layer, the peak wavelength? Max of the EL spectrum of the organic light emitting display device emitted from the second light emitting portion has a predetermined peak wavelength (X nm) 10 nm or less and 10 nm or less in the range of 10 nm or less. Preferably, the peak wavelength (? Max) of the EL spectrum of the organic light emitting display device emitted from the first light emitting portion or the second light emitting portion is in the range of 4 nm to 4 nm smaller than the predetermined peak wavelength (Xnm) Or 8 nm or less and 8 nm or less X 8 nm or less. When the second light emitting portion includes a yellow-green light emitting layer, the peak wavelength? Max of the EL spectrum of the organic light emitting display device emitted from the second light emitting portion may be 550 nm to 570 nm. Therefore, by setting the shift range of the peak wavelength (? Max) of the EL spectrum of the organic light emitting display device, the color difference caused by the shift range of the peak wavelength (? Max) Can be improved. Further, the organic light emitting display of the present invention has a PWES (Peak Wavelength of EL Spectrum) structure in which the shift range of the peak wavelength (? Max) of the EL spectrum is set so that the color difference Can be improved. The peak wavelength (? Max) of the EL spectrum of the organic light emitting display device emitted from the at least one light emitting portion is in a range of 10 nm to 10 nm larger than a predetermined peak wavelength (X nm) in the PWES (Peak Wavelength of EL Spectrum) X X 10 nm or less.

 The light-emitting layer emitting yellow-green light is an example for explaining the present invention, and may be formed of a light-emitting layer that emits green light. Therefore, even when the light emitting layers include the light emitting layer or the red light emitting layer that emits green in addition to the yellow-green light emitting layer, the EL spectrum of the organic light emitting display that is emitted from the light emitting portion including the light emitting layer The peak wavelength (? Max) of the peak wavelength (X nm) should be set within a range of X 10 nm or less, which is a range of 10 nm to 10 nm smaller than the predetermined peak wavelength (X nm). 1 to 3, the peak wavelength (max) of the EL spectrum of the organic EL display device, which emits light from the light emitting portion, is different from that of the organic EL display device It should be set within a range of X 10 nm or less, which is a range of 10 nm smaller than a predetermined peak wavelength (X nm) to 10 nm larger.

Therefore, according to the embodiment of the present invention, the peak wavelength of the EL spectrum of the organic light emitting display device emitted from at least one light emitting portion is in the range of 10 nm smaller than the predetermined peak wavelength (X nm) to X 10 nm The color difference according to the position of the organic light emitting display device can be improved. The present invention can also be applied to a bottom emission display device, a top emission display device, and a both-side emission display device.

As described in FIG. 12, the peak wavelength (? Max) of the EL spectrum of the organic light emitting display device should be set within a range of X 占 10 nm or less, which is 10 nm larger than a predetermined peak wavelength (Xnm) Able to know. In order to meet this range, the total thickness of the organic layers, the content of the dopant contained in the light emitting layer, and the content of the dopant contained in the P-type charge generation layer should be set.

The total thickness of the organic layers in order to set the peak wavelength of the EL spectrum of the organic light emitting diode display device in the range of 10 nm or less to 10 nm or less, which is 10 nm or less than the predetermined peak wavelength (X nm), is as follows. As described in Table 1 and FIGS. 7A to 7C, the total thickness of the organic layers may vary depending on the structure or characteristics of the organic light emitting device, but when the range of movement of the peak wavelength of red is -8 nm to +4 nm , And the total thickness of the organic layers is within a range of about ± 2% or less of a predetermined thickness. When the shift range of the peak wavelength of green is -4 nm to +8 nm, it can be seen that the total thickness of the organic layers is within about ± 3% of the predetermined thickness. When the shift range of the peak wavelength of blue is +4 nm and when it is not shifted, the total thickness of the organic layers is within about ± 3% of the predetermined thickness. As described in Table 3 and FIG. 9, the total thickness of the organic layers may be varied depending on the structure and characteristics of the organic light emitting device. However, when the shift range of the peak wavelength of blue is -4 nm, It can be seen that the total thickness of the organic layers is in the range of about + 2% to -1% than the predetermined thickness. When the shift range of the peak wavelength of yellow-green is +4 nm to +8 nm, it can be seen that the total thickness of the organic layers is about +2% to -1% of the predetermined thickness. The predetermined thickness may be a predetermined thickness in consideration of the emission position of the light emitting layers and the optical characteristics of the organic layers when the organic light emitting device is designed. Therefore, the results of measurements in Table 1, Figs. 7A to 7C, Table 3 and Fig. 9 show that the shift range of the peak wavelength (lambda max) of the EL spectrum of the organic light emitting display device varies depending on the structure and characteristics of the organic light emitting device Therefore, in order for the peak wavelength of the EL spectrum of the organic light emitting diode display to be in the range of 10 nm or less in the range of 10 nm smaller than the predetermined peak wavelength (X nm) to X 10 nm or less, the total thickness of the organic layers is preferably 5 % Small range and 5% large range. In order that the peak wavelength of the EL spectrum of the organic light emitting display device is 8 nm or less in the range of 8 nm smaller than the predetermined peak wavelength (X nm) to X 8 nm or less, the total thickness of the organic layers is preferably 3% It should be noted that it is necessary to have a large range of 3% in a small range. In order to make the peak wavelength of the EL spectrum of the organic light emitting display device to be 4 nm or less in the range of 4 nm to 4 nm or less than the preset peak wavelength (X nm), the total thickness of the organic layers should be 3% It should be noted that it is necessary to have a large range of 3% in a small range. In order for the peak wavelength of the EL spectrum of the organic light emitting display to be in the range of 10 nm or less in the range of 10 nm smaller than the predetermined peak wavelength (X nm) to 10 nm or less, the total thickness of the organic layers It should be within an error range of ± 5% or less.

In order to set the peak wavelength of the EL spectrum of the organic light emitting display device to be within a range of X 占 10 nm or less, which is a range of 10 nm to 10 nm smaller than a predetermined peak wavelength (X nm), the content of the dopant The following is an example. As described in Table 2 and FIGS. 8A to 8C, the content of the dopant contained in the light emitting layer may vary depending on the structure and characteristics of the organic light emitting device, but when the range of movement of the peak wavelength of red is -4 nm The amount of the dopant contained in the red light emitting layer is within the range of ± 50% or less of the content of the predetermined dopant. When the shift range of the peak wavelength of the EL spectrum of green is +4 nm and when it does not move, the content of the dopant contained in the green light emitting layer is within the range of ± 30% . When the shift range of the peak wavelength of the EL spectrum of blue is +4 nm and when it does not move, the content of the dopant contained in the blue light emitting layer is within the range of ± 50% or less of the content of the predetermined dopant . As described in Table 4 and FIG. 10, the content of the dopant included in the light emitting layer may vary depending on the structure and characteristics of the organic light emitting device, but the shift range of the peak wavelength of the yellow-green EL spectrum is -8 nm to +4 nm, the content of the dopant contained in the yellow-green light emitting layer is in the range of -50% to + 30% of the content of the predetermined dopant. The content of the predetermined dopant may be a dopant content determined in consideration of the efficiency of the light emitting layer depending on the content of the dopant in designing the organic light emitting device. Therefore, the results of measurement in Table 2, Figs. 8A to 8C, Table 4 and Fig. 10 show that the shift range of the peak wavelength (lambda max) of the EL spectrum of the organic light emitting display device varies depending on the structure and characteristics of the organic light emitting device Therefore, in order to ensure that the peak wavelength of the EL spectrum of the organic light emitting display device is 10 nm or less in the range of 10 nm smaller than the predetermined peak wavelength (X nm), the content of the dopant contained in the light- It is necessary to have a range of 0% smaller than 50% larger than the content of the water. In order that the peak wavelength of the EL spectrum of the organic light emitting display device is 8 nm or less, which is 8 nm or less in a range of 8 nm smaller than the predetermined peak wavelength (X nm), the content of the dopant contained in the light- It is necessary to have a range of 50% smaller than the content of 50% larger. In order for the peak wavelength of the EL spectrum of the organic light emitting diode display to be 4 nm or less in the range of 4 nm to less than X 4 nm, which is smaller than the preset peak wavelength (X nm), the content of the dopant contained in the light- 30% smaller than 30% larger than the content of water. In order for the peak wavelength of the EL spectrum of the organic light emitting diode display to be in the range of 10 nm or less in the range of 10 nm smaller than the preset peak wavelength (X nm) to X 10 nm or less, the content of the dopant contained in the light- It should be within ± 50% of the dopant content.

In order to set the peak wavelength of the EL spectrum of the organic light emitting display device to be within the range of X 占 10 nm or less, which is 10 nm larger than the predetermined peak wavelength (Xnm) within the range of 10 nm to 10 nm, the dopant The contents are as follows. As described in Table 5 and FIG. 11, the content of the dopant contained in the P-type charge generation layer may vary depending on the structure and characteristics of the organic light emitting device, but the shift range of the peak wavelength of the EL spectrum of blue The dopant contained in the P-type charge generation layer is in a range of about -70% to + 25% than the predetermined dopant content. When the shift range of the peak wavelength of the yellow-green EL spectrum is -4 nm to +4 nm, the content of the dopant contained in the P-type charge generation layer is about -70% higher than the content of the predetermined dopant, To + 25%. The content of the predetermined dopant may be a dopant content determined in consideration of the efficiency of the light emitting layer depending on the content of the dopant in designing the organic light emitting device. Therefore, the measurement results of Table 5 and FIG. 11 show that the shift range of the peak wavelength (? Max) of the EL spectrum of the organic light emitting display device may vary depending on the structure and characteristics of the organic light emitting device, To 10 nm or less in the range of 10 nm smaller than the predetermined peak wavelength (X nm), the content of the dopant contained in the P-type charge generation layer is preferably 50% or less than the content of the predetermined dopant, It should be noted that it is necessary to have a large range of 50% in a small range. In order to make the peak wavelength of the EL spectrum of the organic light emitting display device 8 nm or less within the range of 8 nm to 8 nm smaller than the preset peak wavelength (X nm), the content of the dopant contained in the P- Is 50% smaller than the predetermined dopant content, and 50% larger than the predetermined dopant content. In order to make the peak wavelength of the EL spectrum of the organic light emitting diode display to be within a range of X 4 nm or less, which is 4 nm larger than the predetermined peak wavelength (X nm) in the range of 4 nm to less than the predetermined peak wavelength (X nm), the content of the dopant Is 30% smaller than the predetermined dopant content and 30% larger than the predetermined dopant content. In order for the peak wavelength of the EL spectrum of the organic light emitting diode display to be in the range of X 占 10 nm or less which is 10 nm larger than the predetermined peak wavelength (X nm) in the range of 10 nm smaller than the predetermined peak wavelength (X nm) It can be understood that the content should be within an error range of ± 50% or less as compared with the content of the predetermined dopant.

In addition, Table 5 and FIG. 11 show cases in which two P-type charge generation layers are included, and the contents of the dopants contained in the two P-type charge generation layers are 50% It can be seen that it must have a large range. Alternatively, in the case of the organic light emitting device shown in FIG. 3, even when one P-type charge generation layer is included, the content of the dopant contained in the P-type charge generation layer is 50% It can be seen that it must have a large range.

Therefore, in order for the peak wavelength of the EL spectrum of the organic light emitting display to be in the range of X 占 10 nm or less which is 10 nm larger than the predetermined peak wavelength (Xnm) within the range of 10 nm smaller than the predetermined peak wavelength (Xnm), the total thickness of the organic layers, And the content of the dopant contained in the P-type charge generation layer, and the like must be set. The total thickness of the organic layers, the content of the dopant contained in the light emitting layer, and the content of the dopant contained in the P-type charge generation layer interact with each other and thus the peak wavelength of the EL spectrum of the organic light emitting display device appears, Even if at least one of the thickness, the content of the dopant contained in the light emitting layer, and the content of the dopant contained in the P-type charge generation layer deviates from the set range, at least one and the other range may be adjusted to change the EL spectrum of the organic light emitting display The peak wavelength can be set to be in a range of X 占 10 nm or less, which is a range of 10 nm larger than a preset peak wavelength (X nm) and 10 nm larger. Since the total thickness of the organic layers, the content of the dopant contained in the light emitting layer, and the content of the dopant contained in the P-type charge generation layer can be combined with each other, the peak wavelength of the EL spectrum of the organic EL display device Can be set to be in the range of X 占 10 nm or less, which is a range of 10 nm larger than a predetermined peak wavelength (Xnm) to 10 nm larger than the predetermined peak wavelength (Xnm). That is, the total thickness of the organic layer is in the range of 5% to 5% smaller than the predetermined thickness or 3% to 3% of the smaller range, and the content of the dopant contained in the light emitting layer is 50% smaller than the content of the predetermined dopant , The content of the dopant contained in the P-type charge generation layer is 50% within the range of 50% smaller than the content of the predetermined dopant, or 30% within the range smaller than 30% To 30% larger, and a combination thereof, the peak wavelength of the EL spectrum of the organic light emitting display device is set to be within a range of X 占 10 nm or less, which is 10 nm larger than a predetermined peak wavelength (Xnm) . Alternatively, the total thickness of the organic layer may be in the range of 5% to 5% larger than the predetermined thickness or 3% to 3% or less, and the content of the dopant contained in the light emitting layer may be 50% , The content of the dopant contained in the P-type charge generation layer is 50% within the range of 50% smaller than the content of the predetermined dopant, or 30% within the range smaller than 30% To 30% larger, and a combination thereof, the peak wavelength of the EL spectrum of the organic light emitting display device is set to be within a range of X 8 nm or less, which is a range of 8 nm to 8 nm smaller than a predetermined peak wavelength (X nm) . Alternatively, the total thickness of the organic layer may be in the range of 5% to 5% larger than the predetermined thickness or 3% to 3% or less, and the content of the dopant contained in the light emitting layer may be 50% , The content of the dopant contained in the P-type charge generation layer is 50% within the range of 50% smaller than the content of the predetermined dopant, or 30% within the range smaller than 30% To 30% larger, and combinations thereof, the peak wavelength of the EL spectrum of the organic light emitting display device is set to be within a range of X 4 nm or less, which is a range of 4 nm to 4 nm smaller than a preset peak wavelength (X nm) .

As described above, by optimizing the shift range of the peak wavelength of the EL spectrum of the organic light emitting display device, it is possible to improve the color deficiency and the color difference in the front and side of the organic light emitting display device.

Further, by having a PWES (Peak Wavelength of EL Spectrum) structure in which the shift range of the peak wavelength of the EL spectrum of the organic light emitting display device is set, it is possible to improve the color deficiency and color difference have.

Although the embodiments of the present invention have been described in detail with reference to the accompanying drawings, it is to be understood that the present invention is not limited to those embodiments and various changes and modifications may be made without departing from the scope of the present invention. . Therefore, the embodiments disclosed in the present invention are intended to illustrate rather than limit the scope of the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. Therefore, it should be understood that the above-described embodiments are illustrative in all aspects and not restrictive. The scope of protection of the present invention should be construed according to the claims, and all technical ideas within the scope of equivalents should be interpreted as being included in the scope of the present invention.

100, 200, 300, 400: Organic light emitting device
101, 201, 301, 401: substrate
102, 202, 302, 402: a first electrode
104, 204, 304, 404: a second electrode
210, 310, 410: first light emitting portion 220, 320, 420: second light emitting portion
430: third light emitting portion 240, 340, 440: first charge generating layer
450: second charge generation layer 112, 212, 312, 412: first hole transport layer
222, 322, 422: second hole transport layer 432: third hole transport layer
116, 216, 316, 416: First electron transport layer
226, 326, 426: second electron transport layer 436: third electron transport layer
114, 214, 314, 414: first light emitting layer
224, 324, 424: second light emitting layer 434: third light emitting layer
1000: organic light emitting display
1115: gate electrode 1120: gate insulating layer
1131: semiconductor layer 1133: source electrode
135: drain electrode 1145: color filter
1150: overcoat layer 1170: bank layer
1180:

Claims (36)

A first electrode and a second electrode; And
And an organic layer disposed between the first electrode and the second electrode and having at least one light emitting portion,
The organic layer is provided such that the peak wavelength of the EL spectrum of the organic light emitting display device emitted from the at least one light emitting portion satisfies X 10 nm, which is a range of 10 nm to 10 nm smaller than a predetermined peak wavelength (X nm) Organic light emitting display device. The method according to claim 1,
Wherein the at least one light emitting portion includes at least one light emitting layer, and the at least one light emitting layer is one of a red light emitting layer, a green light emitting layer, and a blue light emitting layer. 3. The method of claim 2,
And the peak wavelength of the red EL spectrum ranges from 600 nm to 650 nm. 3. The method of claim 2,
And the peak wavelength of the green EL spectrum ranges from 520 nm to 550 nm. 3. The method of claim 2,
And the peak wavelength of the blue EL spectrum is in the range of 450 nm to 480 nm. The method according to claim 1,
Wherein the total thickness of the organic layer is within a range of 5% to 5% smaller than a predetermined thickness. The method according to claim 1,
The at least one light emitting portion includes at least one light emitting layer, and the at least one light emitting layer includes at least one host and a dopant. The content of the dopant is in a range of 50% smaller than 50% The organic light emitting display device comprising: The method according to claim 1,
Wherein the at least one light emitting portion is composed of two light emitting portions, the two light emitting portions are light emitting layers having the same wavelength region, and the light emitting layers having the same wavelength region are organic light emitting one of a red light emitting layer, a green light emitting layer, Display device. The method according to claim 1,
Wherein the at least one light emitting portion comprises two light emitting portions, the two light emitting portions include a first light emitting portion including a first light emitting layer, and a second light emitting portion including a second light emitting layer, Wherein the second light emitting layer comprises one of a blue light emitting layer, a deep blue light emitting layer, and a sky blue light emitting layer, wherein the second light emitting layer comprises one of a yellow-green light emitting layer, a green light emitting layer, a red light emitting layer, and a yellow- Emitting display device. 10. The method of claim 9,
And the peak wavelength of the EL spectrum emitted from the first light emitting portion is in the range of 450 nm to 480 nm. 10. The method of claim 9,
And the peak wavelength of the EL spectrum emitted from the second light emitting portion is in the range of 520 nm to 650 nm. 10. The method of claim 9,
Wherein the P-type charge generation layer comprises at least one host and a dopant, and the P-type charge generation layer comprises at least one And a dopant, wherein the content of the dopant is within a range of 50% to 50% smaller than the content of the predetermined dopant. The method according to claim 1,
The at least one light emitting portion may include three light emitting portions, and the three light emitting portions may include a first light emitting portion including a first light emitting layer, a second light emitting portion including a second light emitting layer, Wherein the second light emitting layer comprises a yellow-green light emitting layer, a green light emitting layer, a red light emitting layer, and a yellow-green light emitting layer, and the red light emitting layer comprises a red light emitting layer, Wherein the third light emitting layer includes one of a blue light emitting layer, a deep blue light emitting layer, and a sky blue light emitting layer. 14. The method of claim 13,
And the peak wavelength of the EL spectrum emitted from the first light emitting portion and the third light emitting portion is in the range of 450 nm to 480 nm. 14. The method of claim 13,
And the peak wavelength of the EL spectrum emitted from the second light emitting portion is in the range of 520 nm to 650 nm. 14. The method of claim 13,
Type charge generation layer between the first light-emitting portion and the second light-emitting portion, and a second P-type charge-generation layer between the second light-emitting portion and the third light-emitting portion, the first P- Type charge generation layer and the second P-type charge generation layer include at least one host and a dopant, and the content of the dopant contained in the first P-type charge generation layer and the second P-type charge generation layer is Is set within a range from 50% smaller to 50% larger than the content of the set dopant. The method according to claim 1,
Wherein the organic layer is formed so that the peak wavelength of the EL spectrum of the organic light emitting display device emitted from the at least one light emitting portion satisfies X 8 nm or less which is a range of 8 nm to 8 nm smaller than a predetermined peak wavelength And an organic light emitting diode (OLED). 18. The method of claim 17,
Wherein the thickness of the organic layer is within a range of 3% to 3% larger than a predetermined thickness. 18. The method of claim 17,
The at least one light emitting portion includes at least one light emitting layer, and the at least one light emitting layer includes at least one host and a dopant. The content of the dopant is in a range of 50% smaller than 50% The organic light emitting display device comprising: 18. The method of claim 17,
Wherein the at least one light emitting portion includes a first light emitting portion, a second light emitting portion, and a P-type charge generating layer provided between the first light emitting portion and the second light emitting portion, Wherein the content of the dopant is within a range of 50% to 50% smaller than the content of the predetermined dopant. The method according to claim 1,
The organic layer is formed so that the peak wavelength of the EL spectrum of the organic light emitting display device emitted from the at least one light emitting portion satisfies X 4 nm or less which is a range of 4 nm to 4 nm smaller than a predetermined peak wavelength And an organic light emitting diode (OLED). 22. The method of claim 21,
Wherein the thickness of the organic layer is within a range of 3% to 3% larger than a predetermined thickness. 22. The method of claim 21,
The at least one light emitting portion includes at least one light emitting layer, and the at least one light emitting layer includes at least one host and a dopant. The content of the dopant is within a range of 30% The organic light emitting display device comprising: 22. The method of claim 21,
Wherein the at least one light emitting portion includes a first light emitting portion, a second light emitting portion, and a P-type charge generating layer provided between the first light emitting portion and the second light emitting portion, Wherein the content of the dopant is within a range of 30% to 30% smaller than the content of the predetermined dopant. A first electrode and a second electrode opposing each other on a substrate; And
And at least one light emitting portion disposed between the first electrode and the second electrode and including at least one organic layer,
Wherein the organic layer has a peak wavelength of EL spectrum (PWES) structure in which a shift range of a peak wavelength of an EL spectrum emitted from the at least one light emitting portion is set. 26. The method of claim 25,
Wherein the structure of the peak wavelength of EL spectrum (PWES) is ± 10 nm or less on the front surface of the OLED display. 26. The method of claim 25,
Wherein the structure of the peak wavelength of EL spectrum (PWES) is ± 10 nm or less at a position of ± 60 degrees from the front face of the organic light emitting display device. 26. The method of claim 25,
Wherein the structure of the peak wavelength of EL spectrum (PWES) is in the range of ± 4 nm to ± 8 nm at a position of ± 60 degrees from the front or front of the organic light emitting display device. 26. The method of claim 25,
Wherein an overall thickness of the organic layer is within an error range of +/- 5% or less as compared to a predetermined thickness. 26. The method of claim 25,
Wherein the at least one light emitting portion includes at least one light emitting layer, the at least one light emitting layer includes at least one host and a dopant, and the content of the dopant is within an error range of +/- 50% Organic light emitting display. 26. The method of claim 25,
Wherein the at least one light emitting portion includes at least one light emitting layer, and the at least one light emitting layer is one of a red light emitting layer, a green light emitting layer, and a blue light emitting layer. 26. The method of claim 25,
Wherein the at least one light emitting portion comprises two light emitting portions, and the two light emitting portions include light emitting layers having the same wavelength region. 26. The method of claim 25,
Wherein the at least one light emitting portion comprises two light emitting portions, and the two light emitting portions include light emitting layers having different wavelength regions. 34. The method of claim 33,
The P-type charge generation layer may include at least one host and a dopant. The content of the dopant may be about ± 50% Within the following range of error. 26. The method of claim 25,
The at least one light emitting portion may include three light emitting portions, and the three light emitting portions may include a first light emitting portion including a first light emitting layer, a second light emitting portion including a second light emitting layer, Emitting layer, wherein at least two light-emitting layers of the first light-emitting layer, the second light-emitting layer, and the third light-emitting layer are light-emitting layers having different wavelength regions. 36. The method of claim 35,
Type charge generation layer between the first light-emitting portion and the second light-emitting portion, and a second P-type charge-generation layer between the second light-emitting portion and the third light-emitting portion, the first P- Type charge generation layer and the second P-type charge generation layer include at least one host and a dopant, and the content of the dopant contained in the first P-type charge generation layer and the second P-type charge generation layer is Is within an error range of +/- 50% or less as compared with the content of the dopant set.

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