KR20160050821A - Test method and apparatus for treating substrate - Google Patents

Test method and apparatus for treating substrate Download PDF

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Publication number
KR20160050821A
KR20160050821A KR1020140149880A KR20140149880A KR20160050821A KR 20160050821 A KR20160050821 A KR 20160050821A KR 1020140149880 A KR1020140149880 A KR 1020140149880A KR 20140149880 A KR20140149880 A KR 20140149880A KR 20160050821 A KR20160050821 A KR 20160050821A
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KR
South Korea
Prior art keywords
gas supply
supply line
gas
showerhead
process chamber
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Application number
KR1020140149880A
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Korean (ko)
Inventor
송정일
배완우
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세메스 주식회사
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Priority to KR1020140149880A priority Critical patent/KR20160050821A/en
Publication of KR20160050821A publication Critical patent/KR20160050821A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

The present invention relates to an apparatus for treating a substrate. According to an embodiment of the present invention, the apparatus comprises: a processing chamber having an internal space; a supporting unit arranged in the processing chamber and supporting the substrate; a gas supply unit having a gas supply line configured to supply processing gas to the inside of the processing chamber; a plasma generation unit having a shower head which includes holes configured to spray the processing gas which is supplied to the inside of the processing chamber; and a test unit measuring internal pressure of the gas supply line and testing whether the shower head is fastened on the basis of the measured pressure value. Therefore, the apparatus for treating a substrate can enhance etching efficiency by stably supplying processing gas.

Description

TECHNICAL FIELD [0001] The present invention relates to a substrate processing apparatus,

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a substrate processing apparatus including a shower head, and more particularly, to an inspection method for inspecting a fastening state of a showerhead.

In order to manufacture a semiconductor device, a substrate is subjected to various processes such as photolithography, etching, ashing, ion implantation, thin film deposition, and cleaning to form a desired pattern on the substrate. Among them, the wet etching and the dry etching are used for removing the selected heating region from the film formed on the substrate.

Among them, an etching apparatus using a plasma is used for dry etching. Generally, in order to form a plasma, an electromagnetic field is formed in an inner space of a chamber, and an electromagnetic field excites the process gas provided in the chamber into a plasma state.

Plasma refers to an ionized gas state composed of ions, electrons, radicals, and the like. Plasma is generated by very high temperatures, strong electric fields, or RF electromagnetic fields. The semiconductor device fabrication process employs a plasma to perform an etching process. The process gas is supplied to the process chamber for the etching process. At this time, the process gas is uniformly supplied into the process chamber through the showerhead. However, if an abnormality occurs in the state of the showerhead, the process becomes unstable and the process efficiency becomes low.

It is an object of the present invention to provide a substrate processing apparatus capable of monitoring the state of engagement of a showerhead in real time.

An object of the present invention is to provide a substrate processing apparatus capable of stably supplying a process gas and improving etching efficiency.

The problems to be solved by the present invention are not limited to the above-mentioned problems, and the problems not mentioned can be clearly understood by those skilled in the art from the description and the accompanying drawings will be.

The present invention provides a substrate processing apparatus.

A substrate processing apparatus according to an embodiment of the present invention includes a process chamber having an internal space formed therein, a support unit for supporting the substrate, and a gas supply line for supplying the process gas into the process chamber A plasma generating unit having a gas supply unit, a showerhead having a showerhead having holes for injecting the process gas supplied into the process chamber, and a controller for measuring the pressure inside the gas supply line, And an inspection unit for inspecting the fastening state of the connector.

The inspection unit may include a pressure gauge installed on the gas supply line and a monitoring member indicating a measured pressure of the pressure gauge.

The inspection unit may generate an alarm when the measured pressure value exceeds a predetermined set pressure range or hunting occurs.

The inspection unit may include an interlock to interrupt the supply of the process gas when the alarm occurs.

The plasma generating unit may further include an upper electrode coupled to the shower head at an upper portion thereof and opposed to the shower head and having a through hole through which the process gas flows.

The gas supply line may include a central gas supply line for supplying the process gas to a central region of the upper electrode and an edge gas supply line for supplying the process gas to an edge region of the upper electrode.

The pressure gauge may be installed in each of the central gas supply line and the edge gas supply line.

The shower head may further include a fastening member for fastening the shower head to be coupled with the upper electrode.

According to the embodiments of the present invention, it is possible to provide a substrate processing apparatus capable of monitoring the state of engagement of the showerhead in real time.

According to the embodiments of the present invention, it is possible to provide a substrate processing apparatus capable of stably supplying process gas and increasing etching efficiency.

The effects of the present invention are not limited to the above-mentioned effects, and the effects not mentioned can be clearly understood by those skilled in the art from the present specification and attached drawings.

1 is a cross-sectional view illustrating a substrate processing apparatus according to an embodiment of the present invention.
FIG. 2 is a view of the shower head of FIG. 1 viewed from the bottom.
3 is a view showing a gas supply state when the state of the shower head is normal.
4 is a view showing a gas supply state in the case where the state of engagement of the shower head is abnormal.

The embodiments of the present invention can be modified into various forms and the scope of the present invention should not be interpreted as being limited by the embodiments described below. The present embodiments are provided to enable those skilled in the art to more fully understand the present invention. Accordingly, the shapes of the components and the like in the drawings are exaggerated in order to emphasize a clearer description.

In the embodiment of the present invention, a substrate processing apparatus for cleaning a substrate by using plasma will be described. However, the present invention is not limited thereto, but is applicable to various kinds of apparatuses for heating a substrate placed thereon.

In the embodiment of the present invention, an electrostatic chuck is described as an example of a supporting unit. However, the present invention is not limited to this, and the support unit can support the substrate by mechanical clamping or support the substrate by vacuum.

1 is a sectional view showing a substrate processing apparatus 10 according to an embodiment of the present invention. The substrate processing apparatus 10 processes the substrate W using plasma. In the embodiment of the present invention, an apparatus for etching a substrate W using plasma is taken as an example. However, the technical features of the present invention are not limited thereto and can be applied to various kinds of apparatuses for processing the substrate W using plasma.

1, the substrate processing apparatus 10 includes a process chamber 100, a liner unit 130, a support unit 200, a gas supply unit 300, a plasma generation unit 400, and an inspection unit 340 ).

The process chamber 100 has a space for performing a process inside. An exhaust hole 103 is formed in the bottom surface of the process chamber 100. The exhaust hole 103 is connected to the exhaust line 121 on which the pump 122 is mounted. The reaction byproducts generated in the process and the gas staying in the process chamber 100 are exhausted to the exhaust hole 103 through the exhaust line 121. Thus, it can be discharged to the outside of the process chamber 100. Further, the inner space of the process chamber 100 is reduced in pressure to a predetermined pressure by the exhaust process. For example, the exhaust hole 103 may be provided at a position directly communicating with the through hole 158 of the liner unit 130 described later.

An opening 104 is formed in the side wall of the process chamber 100. The opening 104 serves as a passage through which the substrate enters and exits into the process chamber 100. The opening 104 is opened and closed by a door assembly (not shown). According to one example, a door assembly (not shown) has an outer door, an inner door, and a connecting plate. The outer door is provided on the outer wall of the process chamber. The inner door is provided on the inner wall of the process chamber. The outer door and the inner door are fixedly coupled to each other by a connecting plate. The connecting plate is provided extending from the inside to the outside of the process chamber through the opening. The door driver moves the outer door vertically. The door driver may include a hydraulic cylinder or a motor.

In the lower region of the interior of the process chamber 100, the support unit 200 is positioned. The support unit 200 supports the substrate W by an electrostatic force. Alternatively, the support unit 200 may support the substrate W in a variety of ways, such as mechanical clamping.

The support unit 200 has a support plate 210, a ring assembly 260, and a gas supply line portion 270. The substrate W is placed on the support plate 210. The support plate 210 has a base 220 and an electrostatic chuck 240. The electrostatic chuck 240 supports the substrate W on its upper surface by an electrostatic force. The electrostatic chuck 240 is fixedly coupled to the base 220.

The ring assembly 260 is provided in a ring shape. The ring assembly 260 is provided to surround the perimeter of the support plate 210. In one example, the ring assembly 260 is provided to surround the electrostatic chuck 240. The ring assembly 260 supports the edge region of the substrate W. [ According to one example, the ring assembly 260 has a focus ring 262 and an insulating ring 264. A focus ring 262 is provided to surround the electrostatic chuck 240 and focus the plasma onto the substrate W. [ An insulating ring 264 is provided to enclose the focus ring 262. Optionally, the ring assembly 260 may include an edge ring (not shown) provided in close contact with the periphery of the focus ring 262 to prevent the side of the electrostatic chuck 240 from being damaged by the plasma. Unlike the above, the structure of the ring assembly 260 can be variously changed.

The gas supply line unit 270 includes a gas supply source 272 and a gas supply line 274. A gas supply line 274 is provided between the ring assembly 260 and the support plate 210. The gas supply line 274 supplies gas to remove foreign matter remaining on the upper surface of the ring assembly 260 or the edge region of the support plate 210. In one example, the gas may be nitrogen gas (N 2 ). Optionally, another gas or detergent can be supplied. The gas supply line 274 may be formed to connect between the focus ring 262 and the electrostatic chuck 240 within the support plate 210. Alternatively, the gas supply line 274 may be provided inside the focus ring 262 and be bent to be connected between the focus ring 262 and the electrostatic chuck 240.

According to one example, the electrostatic chuck 240 is provided with a ceramic material, the focus ring 262 is provided with a silicon material, and the insulating ring 264 can be provided with a quartz material. The electrostatic chuck 240 or the base 220 may be provided with a heating member 282 and a cooling member 284 for keeping the substrate W at a processing temperature during the process. The heating member 282 may be provided with a hot wire. The cooling member 284 may be provided as a cooling line through which refrigerant flows. According to one example, the heating member 282 may be provided in the electrostatic chuck 240, and the cooling member 284 may be provided in the base 220.

The gas supply unit 300 supplies the process gas into the process chamber 100. The gas supply unit 300 has a gas storage part 310, a gas supply line 320, and a distributor (). The gas supply line 320 connects the gas storage unit 310 and the gas inlet port (not shown). The gas supply line 320 supplies the process gas stored in the gas storage unit 310 to a gas inlet port (not shown). In one example, a gas inlet port () may be formed on the top of the upper electrode 424. Alternatively, the gas supply line 320 may supply the process gas to an upper portion of the upper electrode 424. The gas supply line 320 may be provided with a valve 322 for opening and closing the passage or regulating the flow rate of the fluid flowing through the passage.

The gas supply line 320 may have a central gas supply line 322 and an edge gas supply line 324. The central gas supply line 322 supplies process gas to the central region of the upper electrode 424. The edge gas supply line 324 supplies the process gas to the edge region of the upper electrode 424. The distributor 330 may distribute the amount of process gas supplied to the central gas supply line 322 and the edge gas supply line 324.

The plasma generating unit 400 generates a plasma from the process gas staying in the discharge space. The discharge space corresponds to the upper region of the support unit 200 in the process chamber 100. The plasma generation unit 400 may have a capacitive coupled plasma source.

2 is a bottom view of the shower head 422 of FIG. The plasma generating unit 400 has an upper electrode portion 420, a lower electrode 440, and a high frequency power source 460. The upper electrode part 420 and the lower electrode 440 are provided so as to face each other in the vertical direction. The upper electrode portion 420 has a showerhead 422 and an upper electrode 424. [ The showerhead 422 is positioned opposite the electrostatic chuck 240 and can be provided with a larger diameter than the electrostatic chuck 240. The showerhead 422 has a hole 422a and a fastening member 422b. The process gas is injected through the holes 422a. The fastening member 422b couples the showerhead 422 and the upper electrode 424. [ A plurality of fastening members 422b may be provided. For example, as shown in Fig. 2, eight fastening members 422b may be provided. Alternatively, the fastening member 422b may be provided in a different number. The fastening member 422b may be provided with a bolt. Optionally, the fastening member 422b may be provided with other types of fastening members. An upper electrode 424 is provided on top of the showerhead 422. The upper electrode 424 is provided to face the shower head 422 and is coupled to the shower head 422. The upper electrode 424 may be provided in contact with the showerhead 422 to be electrically connected to the showerhead 422. Through holes 424a and 424b through which the process gas flows are formed in the upper electrode 424. Referring again to FIG. 1, the through holes 424a and 424b have a central through hole 424a communicating with the central gas supply line 322 and an edge through hole 424b communicating with the edge gas supply line 324 . According to one example, the showerhead 422 may be provided with silicon. Alternatively, the showerhead 422 may be provided of a metal material.

The lower electrode 440 may be provided in the electrostatic chuck 240. According to an example, the upper electrode 420 may be grounded 429, and the lower electrode 440 may be connected to a high frequency power source 460. The high frequency power source 460 may be connected to the upper electrode 420 and the lower electrode 440 may be grounded. In addition, a high frequency power source 460 can be selectively connected to both the upper electrode 420 and the lower electrode 440. In one example, the high frequency power source 460 may apply power to the upper electrode 420 or the lower electrode 440 continuously or in a pulse.

The inspection unit 340 has pressure gauges 342, 344 and a monitoring member 346. The pressure gauges 342 and 344 are installed on the gas supply line 320. The pressure gauges 342 and 344 may be installed on the central gas supply line 322 and the edge gas supply line 324, respectively. The monitoring member 346 indicates the measured pressure of the pressure gauge 342,344. The monitoring member 346 may be provided as a user interface. The monitoring member 346 can communicate with the controller of the substrate processing apparatus. The inspection unit 340 measures the pressure inside the gas supply line 320 and inspects the fastening state of the shower head 422 based on the measured pressure value. For example, when the measured pressure value exceeds a predetermined set pressure range or hunting occurs, the inspection unit 340 determines that the fastening state of the shower head 422 is defective. Further, the inspection unit 340 generates an alarm when the measured pressure value exceeds a predetermined set pressure range or hunting occurs. The inspection unit 340 can generate an interlock to interrupt the supply of process gas when an alarm occurs. Optionally, the inspection unit 340 can generate an interlock to interrupt the supply of process gas if the measured pressure value exceeds a predetermined set pressure range or hunting occurs. The set pressure can be variably set by the user depending on the process type or process timing.

Fig. 3 is a view showing a gas supply state when the fastening state of the shower head 422 is normal. 4 is a view showing the state of gas supply when the fastening state of the shower head 422 is abnormal. Hereinafter, the gas supply state according to the fastening state of the shower head 422 will be described with reference to Figs. 3 and 4. Fig. When the fastening state of the showerhead 422 is normal, the process gas stably supplies the process gas into the process chamber through the upper electrode 424 and the showerhead 422. On the other hand, if an abnormality occurs in the fastening state of the shower head 422, a gap is generated between the shower head 422 and the upper electrode 424. For example, if a problem occurs in the fastening member 422b of the showerhead 422, a gap may be generated between the showerhead 422 and the upper electrode 424. [ When a gap is created between the showerhead 422 and the upper electrode 424, the process gas stays in the space where the gap is formed. As a result, the amount of process gas discharge is different, and the pressure inside the gas supply line 320 varies. At this time, for example, the pressure of the process gas discharged to the central region in the process chamber increases, and the pressure of the process gas discharged to the edge region where the failure occurs in the fastening portion can be reduced. For example, when eight fastening members 422b are provided, if the three fastening conditions are different, the pressure of the process gas supplied to the edge region may be reduced by 0.3 Torr. Alternatively, the pressure of the process gas exiting the central region and the edge region in the process chamber may be reduced. Therefore, by monitoring the pressure change on the gas supply line 320 through the inspection unit 340 of the present invention, it is possible to monitor in real time whether or not the state of the shower head 422 is abnormal.

Although the etching process is performed using the plasma in the above embodiment, the substrate process is not limited thereto. The substrate process may be applied to various substrate processing processes using plasma, such as a deposition process, an ashing process, and a cleaning process . In this embodiment, the plasma generating unit is provided as a capacitive coupled plasma source. Alternatively, however, the plasma generating unit may be provided with an inductively coupled plasma (ICP). The inductively coupled plasma may include an antenna. Further, the substrate processing apparatus may further include a plasma boundary limiting unit. The plasma boundary limiting unit may be provided in a ring shape, for example, and may be provided so as to surround the discharge space, thereby suppressing the plasma from escaping to the outside.

The foregoing description is merely illustrative of the technical idea of the present invention, and various changes and modifications may be made by those skilled in the art without departing from the essential characteristics of the present invention. Therefore, the embodiments disclosed in the present invention are intended to illustrate rather than limit the scope of the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. The scope of protection of the present invention should be construed according to the following claims, and all technical ideas within the scope of equivalents should be construed as falling within the scope of the present invention.

100: Process chamber
200: support unit
300: gas supply unit
320: gas supply line
340: Inspection unit
342,344: Pressure gauge
346: absence of monitoring
400: Plasma generating unit
422: Shower head
424: upper electrode

Claims (12)

A process chamber in which an inner space is formed;
A support unit positioned within the process chamber and supporting the substrate;
A gas supply unit having a gas supply line for supplying a process gas into the process chamber;
A plasma generation unit having a showerhead having holes for injecting the process gas supplied into the process chamber; And
And an inspection unit which measures the pressure inside the gas supply line and inspects the fastening state of the showerhead based on the measured pressure value. The method according to claim 1,
The inspection unit includes:
A pressure gauge installed on the gas supply line; And
And a monitoring member for indicating the measured pressure of the pressure gauge. 3. The method of claim 2,
Wherein the inspection unit generates an alarm when the measured pressure value exceeds a predetermined set pressure range or hunting occurs. The method of claim 3,
Wherein the inspection unit includes an interlock for stopping supply of the process gas when the alarm occurs. The method of claim 4, wherein
Wherein the plasma generating unit further includes an upper electrode which is coupled to the shower head at an upper portion thereof so as to face the shower head and has a through hole through which the process gas flows. 6. The method of claim 5,
Wherein the gas supply line includes:
A central gas supply line for supplying the process gas to a central region of the upper electrode; And
And an edge gas supply line for supplying the process gas to an edge region of the upper electrode. The method according to claim 6,
Wherein the pressure gauge is installed in each of the central gas supply line and the edge gas supply line. 8. The method of claim 7,
Wherein the showerhead further comprises a fastening member for fastening to engage with the upper electrode. A method for inspecting a state of engagement of a shower head in a substrate processing apparatus having a showerhead in a process chamber,
Measuring a pressure in a gas supply line that supplies gas to the showerhead while the showerhead is fastened to the process chamber and inspecting the state of engagement of the showerhead based on the measured pressure value. 10. The method of claim 9,
And judging that the fastening state of the showerhead is defective when abnormal hunting occurs as a result of the pressure measurement or is less than a set value. 11. The method of claim 10,
And an alarm is generated when it is determined that the state of engagement of the showerhead is defective. 12. The method of claim 11,
And generating an interlock to interrupt the supply of the gas when the alarm occurs.
KR1020140149880A 2014-10-31 2014-10-31 Test method and apparatus for treating substrate KR20160050821A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190016167A (en) * 2017-08-07 2019-02-18 세메스 주식회사 Apparatus for treating substrate and test method
KR20190035149A (en) * 2017-09-26 2019-04-03 세메스 주식회사 Substrate processing apparatus and method
KR20200060579A (en) * 2018-11-21 2020-06-01 삼성전자주식회사 Gas injection module, substrate processing apparatus and method for manufacturing semiconductor device using the same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190016167A (en) * 2017-08-07 2019-02-18 세메스 주식회사 Apparatus for treating substrate and test method
KR20190035149A (en) * 2017-09-26 2019-04-03 세메스 주식회사 Substrate processing apparatus and method
KR20200060579A (en) * 2018-11-21 2020-06-01 삼성전자주식회사 Gas injection module, substrate processing apparatus and method for manufacturing semiconductor device using the same
US10934621B2 (en) 2018-11-21 2021-03-02 Samsung Electronics Co., Ltd. Gas injection module, substrate processing apparatus, and method of fabricating semiconductor device using the same
US11384433B2 (en) 2018-11-21 2022-07-12 Samsung Electronics Co., Ltd. Gas injection module, substrate processing apparatus, and method of fabricating semiconductor device using the same

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