KR20160035536A - Display panel and method of manufacturing the same - Google Patents

Abstract

The present invention discloses a display panel. The display panel includes: a substrate on which a thin film transistor is disposed; a first electrode electrically connected to the thin film transistor; a roof layer disposed on the first electrode, defining a cavity overlapping the first electrode, and including an organic insulation material; and a liquid crystal layer disposed inside the cavity to come in contact with the roof layer. The present invention forms a sacrificial layer and the roof layer with materials of which phases are separated from each other individually, thereby increasing an aperture ratio of the display panel and improving a manufacturing process of the display panel.

Description

DISPLAY PANEL AND METHOD OF MANUFACTURING THE SAME [0002]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a display panel and a method of manufacturing the same, and more particularly, to a display panel including only one substrate, the display panel having an improved aperture ratio and an improved process, and a method of manufacturing the same.

In general, the display panel includes an array substrate including a switching element, a color filter substrate facing the array substrate and including a color filter, and a liquid crystal layer disposed between the array substrate and the color filter substrate. The array substrate includes a first base substrate, and the color filter substrate includes a second base substrate. As such, the display panel includes two base substrates, resulting in a high manufacturing cost.

Accordingly, recently, a display panel of an embedded microcavity (EM) type in which a switching element and a color filter are formed on one base substrate and liquid crystal molecules are accommodated is being developed.

In manufacturing an embedded micro-cavity type display panel, a sacrificial layer is formed to form a cavity. In order to cure the sacrificial layer and to remove the gas inside, it is hard bake.

However, when the hard bake process temperature is increased to secure the margin of the subsequent process, the sacrificial layer is formed to have both sides higher than the central portion by thermal reflow. Therefore, both sides of the sacrificial layer are darkened, and the aperture ratio of the display panel is reduced.

In order to prevent thermal reflow, when the thin films are formed on the sacrificial layer without hard baking, the sacrificial layer does not sufficiently cure and wrinkles are formed on the upper surface of the sacrificial layer. Therefore, the films on the sacrificial layer also have a problem of wrinkles.

It is an object of the present invention to provide a display panel in which the sacrificial layer and the roof layer are each formed of a material that is phase-separated from each other, thereby improving the aperture ratio.

Another object of the present invention is to provide a method of manufacturing the display panel in which the process is improved.

According to an embodiment of the present invention, a display panel includes a substrate on which a thin film transistor is disposed, a first electrode electrically connected to the thin film transistor, a second electrode disposed on the first electrode, And includes a roof layer comprising an organic insulating material and a liquid crystal layer disposed in the cavity and in contact with the roof layer.

In one embodiment of the present invention, the cavity may be in the form of a tunnel.

In one embodiment of the present invention, the roof layer may be a color filter.

In one embodiment of the present invention, the display panel may further include a color filter overlapping the first electrode.

In one embodiment of the present invention, the display panel further includes a second electrode overlapped with the first electrode, to which a common electrode is applied, and the first electrode or the second electrode includes a plurality of slits can do.

According to another aspect of the present invention, there is provided a display panel including a substrate on which a thin film transistor is disposed, a first electrode electrically connected to the thin film transistor, a second electrode disposed on the first electrode, And a liquid crystal layer disposed in the cavity, the liquid crystal layer being in contact with the alignment layer, the liquid crystal layer being in contact with the alignment layer.

According to another aspect of the present invention, there is provided a method of manufacturing a display panel. According to the method, a thin film transistor and a first electrode electrically connected to the thin film transistor are formed. A positive photoresist composition is coated on the first electrode to form a sacrificial layer. The sacrificial layer is exposed and developed to form a sacrificial pattern. A negative photoresist composition is coated to form a roof layer in contact with the sacrificial pattern. The sacrificial pattern is removed to form a cavity.

In one embodiment of the present invention, the positive photoresist composition may include a polyamide-based compound, a photosensitive quinone diazide compound, and a first solvent.

In one embodiment of the present invention, the negative photoresist composition comprises an acrylic compound, a photoinitiator and a second solvent, and the roof layer may cover the sacrificial pattern as a whole.

In one embodiment of the present invention, the polyamide-based compound is insoluble in the second solvent, and the acrylic compound may be insoluble in the first solvent.

In one embodiment of the present invention, the first solvent is selected from the group consisting of propylene glycol monomethyl ether (PGME), cyclohexanone, ethyl lactate (EL), gamma-butyrol Butyrolactone (GBL), N-methylpyrrolidione (NMP), and the like.

In an embodiment of the present invention, the second solvent may include propylene glycol methyl ether acetate (PGMEA).

In one embodiment of the present invention, the negative photoresist composition comprises an acrylic compound, a photoinitiator, a colorant and a second solvent, and the roof layer may be a color filter partially covering the sacrificial pattern.

In one embodiment of the present invention, a protective layer may be further formed to cover the color filter.

In an exemplary embodiment of the present invention, a color filter may be further formed to overlap with the first electrode and disposed below the first electrode.

In one embodiment of the present invention, the cavity may be in the form of a tunnel.

In one embodiment of the present invention, in order to remove the sacrificial pattern,

The sacrificial pattern may be provided with an amide-based stripper.

In one embodiment of the present invention, a liquid crystal layer may be formed by injecting a liquid crystal material into the cavity.

According to the display panel and the method of manufacturing the same according to the present invention, in the display panel including only one substrate, the sacrificial layer and the roof layer are formed of materials which are phase-separated from each other, It is possible to reduce the use of the mask and to improve the aperture ratio of the display panel except for the hard bake of the sacrifice layer.

1 is a plan view of a display panel according to an embodiment of the present invention.
2 is a plan view of the first pixel of Fig.
3 is a cross-sectional view of a display panel according to an embodiment of the present invention taken along the line II 'of FIG.
FIGS. 4A to 4F are cross-sectional views illustrating a method of manufacturing a display panel according to an embodiment of the present invention, which is cut along the line II in FIG.
5 is a cross-sectional view of a display panel according to an embodiment of the present invention taken along the line II 'of FIG.
6A, 6C, 6E, 6G, 6I, 6K, and 6L are cross-sectional views illustrating a method of manufacturing a display panel according to an embodiment of the present invention, which is cut along the line II in FIG.
6B, 6D, 6F, 6H and 6J are plan views for explaining a method of manufacturing a display panel according to an embodiment of the present invention.

Hereinafter, embodiments according to the present invention will be described in detail with reference to the drawings.

1 is a plan view of a display panel according to an embodiment of the present invention.

Referring to FIG. 1, the display panel includes a plurality of gate lines GL, a plurality of data lines DL, and a plurality of pixels.

The gate line GL may extend in the first direction D1. The data line DL may extend in a second direction D2 that intersects the first direction D1. Alternatively, the gate line GL may extend in the second direction D2, and the data line DL may extend in the first direction D1.

The pixels are arranged in a matrix form. The pixels may be arranged in an area defined by the gate lines GL and the data lines DL.

Each pixel may be connected to an adjacent gate line GL and an adjacent data line DL. For example, each pixel may be connected to one adjacent gate line GL and one adjacent data line DL.

For example, the pixel may have a rectangular shape, a V-shape, and a Z-shape.

2 is a plan view of the first pixel of Fig. 3 is a cross-sectional view of a display panel according to an embodiment of the present invention taken along line I-I 'of FIG.

1 to 3, the display panel includes a substrate 100, a thin film transistor (TFT), a gate insulating layer 110, a data insulating layer 120, a black matrix BM, a color filter 130, A first electrode EL1, a passivation layer 140, a second electrode EL2, a liquid crystal layer 150, and a roof layer 160. [

The substrate 100 is a transparent insulating substrate. For example, the substrate 100 may be a glass substrate or a transparent plastic substrate.

The substrate 100 has a plurality of pixel regions for displaying an image. The pixel region is arranged in a matrix form having a plurality of rows and a plurality of rows.

The pixel further includes a switching element. For example, the switching device may be a thin film transistor (TFT). The switching element may be connected to an adjacent gate line GL and an adjacent data line DL. The switching element may be disposed in a region where the gate line GL and the data line DL intersect.

A gate pattern including a gate electrode GE and a gate line GL is disposed on the substrate 100. [ The gate line GL is electrically connected to the gate electrode GE.

The gate insulating layer 110 is disposed on the substrate 100 on which the gate pattern is disposed to insulate the gate pattern.

A semiconductor pattern SM is formed on the gate insulating layer 110. The semiconductor pattern SM overlaps with the gate electrode GE.

A data pattern including a data line DL, a source electrode SE and a drain electrode DE is disposed on the gate insulating layer 110 on which the semiconductor pattern SM is formed. The source electrode SE overlaps the semiconductor pattern SM and is electrically connected to the data line DL.

The drain electrode DE is spaced from the source electrode SE on the semiconductor pattern SM. The semiconductor pattern SM forms a conductive channel between the source electrode SE and the drain electrode DE.

The gate electrode GE, the source electrode SE, the drain electrode DE and the semiconductor pattern SM constitute the thin film transistor TFT.

The data insulating layer 120 is disposed on the gate insulating layer 110 on which the data pattern is disposed to insulate the data pattern.

The gate insulating layer 110 and the data insulating layer 120 may include organic or inorganic insulating materials. For example, the gate insulating layer 110 and the data insulating layer 120 may include silicon oxide (SiOX) or silicon nitride (SiNX).

The color filters 130 and the black matrices BM are disposed on the data insulating layer 120.

The color filters 130 are disposed between the data lines DL adjacent to each other. The color filters 130 are for providing color to light transmitted through the liquid crystal layer LC.

The color filters 130 are provided corresponding to the respective pixel regions. For example, the color filters 130 may be a red color filter (red), a green color filter (green), and a blue color filter (blue). The color filters 130 may be arranged to have different colors between adjacent pixels. For example, the color filters 130 may be spaced apart from the boundaries of the adjacent pixel regions.

The color filters 130 may be formed in an island shape with the data lines DL as a boundary. Alternatively, the color filters 130 may be overlapped by the adjacent color filters 130 at the boundaries of adjacent pixel regions.

The display panel may include a signal wiring connected to the thin film transistor (TFT) and a black matrix (BM) overlapping the signal wiring and blocking light.

The black matrix BM may be disposed at the boundary between adjacent pixel regions. That is, the black matrixes BM may be formed between adjacent color filters 130.

The black matrix BM may be disposed corresponding to the gate line GL, the data line DL, and the area where the switching elements are disposed. That is, the black matrix BM is formed in a non-display area of the pixel.

For example, the black matrix (BM) may include a photosensitive organic material to which a pigment such as carbon black is added.

The first electrode EL1 is disposed on the color filter 130. [ The first electrode EL1 may be disposed in the pixel region. The first electrode (EL1) may overlap the color filters (130). The first electrode EL1 is electrically connected to the thin film transistor TFT. A gray scale voltage is applied to the first electrode EL1 through the thin film transistor TFT.

For example, the first electrode EL1 may include a transparent conductor such as indium tin oxide (ITO), indium zinc oxide (IZO), or aluminum-doped zinc oxide (AZO). The first electrode EL1 may have a continuous plate shape.

A passivation layer 140 covering the first electrode EL1 and the black matrix BM is disposed. The passivation layer 140 may be formed on the entire surface of the substrate 100.

The passivation layer 140 may include an organic or inorganic insulating material. For example, the passivation layer 140 may comprise silicon oxide (SiOX) or silicon nitride (SiNX).

The second electrode (EL2) is disposed on the passivation layer (140). And may overlap the first electrode EL1 on the passivation layer 140. [

For example, the second electrode EL2 may include a transparent conductor such as indium tin oxide (ITO), indium zinc oxide (IZO), or aluminum-doped zinc oxide (AZO). For example, the second electrode EL2 may include a plurality of slits.

In one embodiment, a common voltage may be applied to the second electrode EL2. That is, the first electrode EL1 functions as a pixel electrode, and the second electrode EL2 functions as a common electrode. In another embodiment, the second electrode EL2 is connected to the thin film transistor TFT to receive a gray scale voltage, and a common voltage may be applied to the first electrode EL1. In addition, the first electrode EL1 may include a slit, and the second electrode EL2 may have a continuous plate shape.

The liquid crystal layer 150 overlaps with the color filters 130.

The liquid crystal layer 150 may be disposed on the pixels with the data lines DL as a boundary.

The liquid crystal layer 150 may include a liquid crystal. The liquid crystal layer 150 may control the light transmittance of the pixel by adjusting the arrangement of liquid crystal molecules by an electric field applied on the first electrode EL1 and the second electrode EL2.

The roof layer 160 may be disposed on the liquid crystal layer 150. Specifically, the roof layer 160 may be in direct contact with the liquid crystal layer 150.

The roof layer 160 covers the liquid crystal layer 150. In addition, the roof layer 160 includes barrier ribs disposed in a region where the liquid crystal layer 150 is spaced apart. The barrier ribs are overlapped with the data lines DL to maintain the shape of the roof layer 160.

The roof layer 160 comprises an organic insulating material. The organic insulating material may include a material that is cured by light. Thus, the roof layer 160 can be cured through exposure and heating.

Although not shown, the roof layer 160 may have a stripper inlet formed therein to expose a part of the liquid crystal layer 150. The sealing layer may further include a sealing layer on the roof layer 160, and the leakage of the liquid crystal may be prevented by covering the stripper inlet.

FIGS. 4A to 4F are cross-sectional views illustrating a method of manufacturing a display panel according to an embodiment of the present invention, taken along line I-I of FIG.

1 to 4F, a method of manufacturing a display panel according to an embodiment of the present invention will be described in detail.

1 to 4C, a gate insulating layer 110, a data line DL, a data insulating layer 120, a color filter 130, a black matrix BM, a first electrode EL1, A sacrificial layer SL is formed on the substrate 100 on which the electrode EL2 is disposed.

A gate pattern including a gate electrode GE and a gate line GL is formed on the substrate 100. [ The gate pattern may be formed by forming a first conductive layer on the substrate 100 and patterning the first conductive layer by photolithography.

The gate insulating layer 110 is formed on the substrate 100 on which the gate pattern is formed. The gate insulating layer 110 covers and insulates the gate pattern.

A semiconductor pattern SM is formed on the gate insulating layer 110. The semiconductor pattern is disposed overlapping with the gate electrode (GE).

A data pattern including a data line DL, source and drain electrodes SE and DE is formed on the gate insulating layer 110 on which the semiconductor pattern SM is formed. The data pattern may be formed by forming a second conductive layer on the gate insulating layer 110 and patterning the second conductive layer by photolithography.

The drain electrode DE is formed on the semiconductor pattern SM so as to be spaced apart from the source electrode SE. The semiconductor pattern SM forms a conductive channel between the source electrode SE and the drain electrode DE.

The gate electrode GE, the source electrode SE, the drain electrode DE and the semiconductor pattern SM constitute the thin film transistor TFT.

The data insulating layer 120 is formed on the gate insulating layer 110 on which the data pattern is formed.

The color filter 130 is formed on the substrate 100 on which the data lines connected to the thin film transistor TFT are arranged. The color filter 130 is formed between the adjacent data lines DL.

The black matrices BM may be disposed at the boundaries between adjacent pixel regions. For example, the black matrices (BM) may be formed between the color filters 130 adjacent to each other in the first direction. The black matrix BM may be disposed corresponding to the gate line GL, the data line DL, and the area where the switching elements are disposed. For example, the black matrix (BM) may include a photosensitive organic material to which a pigment such as carbon black is added.

A positive photoresist composition is coated on the color filters 130 and the black matrices BM to form a sacrificial layer (SL).

The sacrificial layer SL is formed to have a width and height corresponding to the width and height of the cavity at a position where the liquid crystal layer 150 is to be formed.

The sacrificial layer (SL) is formed by coating the positive photoresist composition.

The positive photoresist composition will be described later in detail with a negative photoresist composition included in a roof layer to be described later.

For example, the sacrificial layer SL may be formed by an inkjet process or a spin-coating process.

After forming the sacrificial layer (SL), the sacrificial layer (SL) may be soft-baked prior to exposure. For example, the soft bake may be conducted at a process temperature ranging from 120 < 0 > C to 130 < 0 > C.

A transmissive portion T for providing light on an area overlapping the data line DL and the black matrix BM on the substrate 100 and a light blocking layer for blocking light provided to the color filters 130. [ A mask (MASK) including a light-shielding portion (B) is disposed. The sacrificial layer (SL) is exposed using the mask (MASK).

Thereafter, the exposed portion of the sacrificial layer SL can be removed using a developing solution.

The developing solution may comprise an aqueous alkaline solution. For example, the developer may be an amide-based solution.

Referring to FIG. 4D, a negative photoresist composition may be coated on the sacrificial pattern SL to form a roof layer 160.

The roof layer 160 is formed on the sacrificial pattern SL. The roof layer 160 is in direct contact with the sacrificial pattern SL.

Phase separation occurs between the sacrificial pattern SL and the roof layer 160. Therefore, the roof layer 160 including the negative photoresist composition and the sacrificial pattern SL including the positive photoresist composition are not mixed with each other, so that the structure can be maintained.

The positive photoresist composition may include a polyamide-based compound, a photosensitive quinine diazide compound, and a first solvent.

For example, the polyamide-based compound may include a polyamic acid which is a polyimide precursor. The polyamic acid can be cured to form a polyimide resin. For example, the polyamide-based compound may include a compound containing a repeating unit represented by the following formula (1).

[Chemical Formula 1]

이고, 여기서, 상기 R5는 수소, 하이드록실기, 탄소수 1 내지 20의 알킬기 또는 방향족 작용기이다. Wherein R 1 and R 2 are each independently an alkyl group (alkylene group) having 1 to 20 carbon atoms or an aromatic group, and R 3 and R 4 are each independently hydrogen, an alkyl group having 1 to 20 carbon atoms,

, Wherein R5 is hydrogen, a hydroxyl group, an alkyl group having 1 to 20 carbon atoms, or an aromatic group.

The polyamide-based compound may be formed by a polymerization reaction of a diamine compound and a dianhydride compound.

Thus, the R2 may be derived from a diamine compound. For example, the diamine compound may be selected from 3,4'-diaminodiphenyl ether, 4,4'-diaminodiphenyl ether, 3,4'-diaminodiphenylmethane, 4,4'- Phenylmethane, 4,4'-diaminodiphenylsulfone, 4,4'-diaminodiphenylsulfide, benzidine, m-phenylenediamine, p-phenylenediamine, 1,5-naphthalenediamine, 2,6 Bis (4-aminophenoxy) phenyl] sulfone, bis (4-aminophenoxy) Ether, 1,4-bis (4-aminophenoxy) benzene.

The weight average molecular weight of the polyamide-based compound may range from 3,000 to 300,000. The polyamide-based compound having a weight average molecular weight in the above range is excellent in solubility in the first solvent.

The photosensitive quinone diazide compound may be a compound containing a naphthoquinone diazide structure or a benzoquinone diazide structure.

The first solvent may dissolve the polyamide-based compound.

For example, the first solvent may include propylene glycol monomethyl ether (PGME), cyclohexanone, ethyle lactate (EL), gamma-butyrolactone, GBL), N-methylpyrrolidione (NMP).

For example, the positive photoresist composition may comprise from 5 wt% to 70 wt% of a polyamide-based compound, from 0.5 wt% to 30 wt% of a quinine diazide compound, and an excess of the first solvent.

The negative photoresist composition may include an acrylic compound, a photoinitiator, and a second solvent.

For example, the acrylic compound may be a polyacrylate-based or polymethacrylate-based resin.

For example, the photoinitiator may be a halogen-containing iminosulfonate photo-initiator, a diazonaphthoquinone-4-sulfonate photo acid generator or a triazine photoinitiator.

The second solvent may dissolve the acrylic compound.

For example, the second solvent may include propylene glycol methyl ether acetate (PGMEA).

The polyamide-based compound may be insoluble in the second solvent.

The second solvent has no functional group capable of hydrogen bonding, and it is difficult to dissolve the polyamide-based compound having polarity. The first solvent can not dissolve the acrylic compound. When the second solvent is added to the polyamide-based compound, the polyamide-based compound precipitates.

For example, the negative photoresist composition may comprise from 5% to 70% by weight of the acrylic compound, from 1% to 35% by weight of the photoinitiator and an excess of the second solvent.

Therefore, even if the roof layer 160 is formed by coating the negative photoresist composition on the sacrificial pattern SL, they are not mixed with each other, and phase separation occurs therebetween to maintain the structure.

Referring to FIGS. 1 to 4E, after the roof layer 160 is formed, the sacrificial pattern SL is removed using a stripper.

Although not shown, prior to the step of removing the sacrificial pattern SL for injecting the stripper for removing the sacrificial pattern SL, a step of forming the stripper inlet may be included. In order to increase the solubility of the sacrificial pattern SL before the stripper is provided, the substrate on which the sacrificial pattern SL is formed may be entirely exposed.

A stripper is injected into the sacrificial pattern SL through the stripper inlet. The stripper removes the sacrificial pattern SL. Accordingly, when the sacrificial pattern SL is removed using the stripper, the cavity 145 is formed in the place where the sacrificial pattern SL is located. The cavity 145 may have the form of a tunnel extending in one direction. For example, the cavity 145 may extend in a direction parallel to the data line DL. The cavity 145 overlaps the first electrode EL1 or the second electrode EL2.

The stripper may comprise an aqueous alkaline solution. For example, the stripper may be an amide-based solution. The stripper containing the amide-based solution can remove all of the sacrificial patterns SL including the polyamide-based compound, but does not affect the structure of the roof layer 160.

The step of removing the sacrificial pattern (SL) using the stripper may proceed at about 23 캜 to about 26 캜. Alternatively, the step of removing the sacrificial pattern SL using the stripper may increase the removal rate and raise the process temperature within a temperature range that does not damage other structures. For example, the step of removing the sacrificial pattern (SL) using the stripper may proceed at about 23 캜 to about 80 캜.

Referring to FIGS. 1 to 4F, a liquid crystal material is injected into the cavity 145 to form the liquid crystal layer 150.

The liquid crystal material is provided as a fluid so that it is moved into the cavity 145 by a capillary phenomenon if it is provided near the cavity. For example, the liquid crystal material may be provided to the cavity 145 through the stripper inlet.

The liquid crystal material may be provided near the cavity 145 using an inkjet using a micropipette. In addition, the liquid crystal material may be supplied into the cavity 145 using a vacuum liquid crystal injection device.

Although not shown, a sealing layer may be formed on the roof layer 160. The sealing layer covers the stripper inlet so as to prevent leakage of the liquid crystal.

5 is a cross-sectional view of a display panel according to an embodiment of the present invention taken along the line I-I 'in FIG.

5, the display panel includes a substrate 100, a thin film transistor (TFT), a gate insulating layer 110, a data insulating layer 120, a black matrix BM, a color filter 130, And includes a first electrode EL1, a passivation layer 140, a second electrode EL2, a bottom alignment layer AL1, a liquid crystal layer 150, an upper alignment layer AL2, and a roof layer 160. [

5 are the same except for the display panel according to FIG. 3 and the lower alignment layer AL1 and the upper alignment layer AL2. Therefore, the following description is omitted or simplified.

The lower alignment film AL1 is disposed on the color filters 130. [ Specifically, the lower alignment layer AL1 is disposed on the passivation layer 140 and the second electrode EL2.

The liquid crystal layer 150 is disposed on the lower alignment layer AL1 and overlaps with the color filters 130. [

The upper alignment layer AL2 is disposed on the liquid crystal layer 150. [

The roof layer 160 directly contacts the upper alignment layer AL2 to cover the upper alignment layer AL2. For example, the roof layer 160 may comprise an organic insulating material.

The lower alignment layer AL1 and the upper alignment layer AL2 are for pre-tilting the liquid crystal molecules of the liquid crystal layer 150. [

For example, the thicknesses of the lower alignment layer AL1 and the upper alignment layer AL2 may be 10 mu m to 100 mu m.

The lower alignment film AL1 and the upper alignment film AL2 are formed using an alignment film composition.

The roof layer 160 may have a stripper inlet formed therein to expose a part of the liquid crystal layer 150.

After the alignment film composition is applied to the inside of the cavity 145 through the stripper inlet, the alignment film composition may be dried to partially remove the solvent. The substrate 100 may be left at room temperature or heated to dry the alignment film composition.

Although the sacrificial layer 150 and the roof layer 160 are formed on the color filter 130 in the above embodiment, the color filter may serve as a roof layer in other embodiments.

FIGS. 6A, 6C, 6E, 6G, 6I, 6K and 6L are cross-sectional views illustrating a method of manufacturing a display panel according to an embodiment of the present invention, which is cut along the line I-I of FIG. 6B, 6D, 6F, 6H and 6J are plan views for explaining a method of manufacturing a display panel according to an embodiment of the present invention. 6B is a plan view of FIG. 6A, FIG. 6D is a plan view of FIG. 6C, FIG. 6F is a plan view of FIG. 6E, FIG. 6H is a plan view of 6g, and FIG.

The structure of the thin film transistor in the display panel can be described with reference to FIG. The display panel may be substantially the same as the display panel shown in Figs. 1, 2 and 5, except that the color filter serves as a roof layer. Therefore, redundant description can be omitted.

2, 6A and 6B, a gate pattern, a gate insulating layer 210, a semiconductor pattern SM, a data pattern, a data insulating layer 220, a first electrode EL1, A layer 230, a second electrode EL2, and a black matrix BM are formed.

 The gate pattern may include a gate line GL and a gate electrode connected to the gate line GL.

The gate insulating layer 210 covers the gate pattern.

The semiconductor pattern SM is formed on the gate insulating layer 210. The semiconductor pattern SM overlaps the gate electrode.

The data pattern includes a source electrode SE, a drain electrode DE and a data line DL. The source electrode SE and the drain electrode DE are in contact with the semiconductor pattern SM and are spaced apart from each other. The data line DL is connected to the source electrode SE.

The data insulation layer 220 covers the data pattern.

The first electrode (EL1) is formed on the data insulating layer (220). The passivation layer 230 covers the first electrode EL1.

The second electrode (EL2) is formed on the passivation layer (230). The second electrode EL2 includes a plurality of slits SP overlapping the first electrode EL1. The slits SP may extend in one direction, for example, in a direction parallel to the data line DL.

The black matrix BM overlaps with the gate line GL. The black matrix BM may have a linear shape extending in the same direction as the gate line GL. In one embodiment, the black matrix BM may be formed on the passivation layer 230, but in other embodiments, the black matrix BM may be formed on the data insulation layer 220, Or between the layer 220 and the passivation layer 230. In another embodiment, the black matrix (BM) may be omitted.

6C and 6D, a sacrificial pattern SL is formed on the second electrode EL2. The sacrificial pattern SL covers the second electrode EL2 as a whole. The sacrificial pattern SL may further cover the black matrix BM. The sacrificial pattern SL may be formed in the same manner as the sacrificial pattern SL shown in Fig. 4C.

Referring to Figs. 6E and 6F, a first color filter CF1 is formed on the first sacrificial pattern SL. Specifically, after the photoresist composition is applied on the first sacrificial pattern SL, the photoresist composition is exposed and developed to form the first color filter CF1. The photoresist composition may be a negative photoresist composition, and may include an acrylic compound, a photoinitiator, a colorant, and a solvent.

The acrylic compound may include a polyacrylate-based, polymethacrylate-based resin. The photoinitiator may include a halogen-containing iminosulfonate photo-initiator, a diazonaphthoquinone-4-sulfonate photo acid generator, or a triazine-based photoinitiator. The solvent may comprise propylene glycol methyl ether acetate (PGMEA).

For example, the photoresist composition may comprise from 5 wt% to 70 wt% of an acrylic compound, from 1 wt% to 35 wt% of a photoinitiator, from 1 wt% to 30 wt% of a colorant, and an excess of a second solvent.

Even when the negative photoresist composition is coated on the sacrificial pattern SL, the negative photoresist composition is not mixed with the sacrificial pattern SL, and phase separation occurs therebetween to maintain the structure.

The first color filter CF1 has a specific color and is formed in a specific pixel region. For example, the first color filter CF1 may include a red colorant. In order to form the red color filter, the photoresist composition may comprise a red colorant, for example, a red pigment.

Referring to Figs. 6G and 6H, a second color filter CF2 is formed on the second sacrificial pattern SL. The second color filter CF2 may be adjacent to the first color filter CF1 and partially overlap with the first color filter CF1. The second color filter CF2 may include a color different from the first color filter CF1, for example, a green colorant. In order to form the green color filter, a photoresist composition containing a green pigment may be used.

Although not shown, in the same manner, at least one color filter having a different color from the first color filter CF1 and the second color filter CF2 may be further formed. For example, the third color filter may be a blue filter. The fourth color filter may represent white, yellow, cyan, magenta, and the like.

The color filters are formed to overlap with the second electrode EL2. Therefore, a part of the sacrificial pattern SL can be exposed without being covered by the color filters.

Referring to FIGS. 6I and 6J, the sacrificial pattern SL is removed. In order to remove the sacrificial pattern SL, a stripper is provided in the sacrificial pattern SL. In order to increase the solubility of the sacrificial pattern SL before the stripper is provided, the substrate on which the sacrificial pattern SL is formed may be entirely exposed.

A part of the sacrificial pattern SL is not covered by the color filter, so that the sacrificial pattern SL can be easily contacted with the stripper. When the sacrificial pattern SL is removed, a cavity 245 is formed in the place where the sacrificial pattern SL is located. The cavity may have the form of a tunnel extending in one direction. For example, the cavity may extend in a direction parallel to the data line DL. The plurality of cavities 245 may be spaced from each other along a direction parallel to the gate line GL. On the plan view, the data lines DL may be disposed between adjacent cavities 245.

The stripper may comprise an aqueous alkaline solution. For example, the stripper may be an amide-based solution. The stripper containing the amide-based solution can remove the sacrificial pattern SL containing the polyamide-based compound, and does not damage the structure of the color filters CF1 and CF2.

Referring to FIG. 6K, an alignment film is formed in the cavity 245. An alignment film composition may be provided in the cavity 245 to form the alignment film.

The alignment layer may include a lower alignment layer AL1 covering the second electrode EL2 and an upper alignment layer AL2 covering a lower surface of the color filter. Although the lower alignment layer AL1 and the upper alignment layer AL2 are illustrated as being separated from each other, they may be substantially connected to each other.

After the alignment film is formed, liquid crystal may be provided in the cavity 245.

Referring to FIG. 61, a protective layer 250 covering the color filter may be formed. The protective layer 250 protects the color filter and may include an organic material or an inorganic material. In addition, the protective layer 250 may have a single-layer structure or a multi-layer structure of an organic material and an inorganic material.

As described above, the present invention can be applied to a liquid crystal display panel including one base substrate and a liquid crystal display device including the same.

While the present invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims. It will be understood that various modifications and changes may be made thereto without departing from the scope of the present invention.

100, 200: substrate 110, 210: gate insulating layer
120, 220: data insulation layer 130, CF1, CF2: color filter
140, 230: passivation layer 150: liquid crystal layer
160: roof layer P1, P2: first and second pixels
EL 1, 2: first and second electrodes BM: black matrix
SL: sacrificial layer SL: sacrificial pattern
AL1: lower alignment film AL2: upper alignment film
GL: gate line DL: data line
D1: first direction D2: second direction

Claims (20)

A substrate on which a thin film transistor is disposed;
A first electrode electrically connected to the thin film transistor;
A roof layer disposed over the first electrode and defining a cavity overlying the first electrode, the roof layer comprising an organic insulating material; And
And a liquid crystal layer disposed in the cavity and in contact with the roof layer. The display panel according to claim 1, wherein the cavity has a tunnel shape. The display panel according to claim 1, wherein the roof layer is a color filter. The display panel according to claim 1, further comprising a color filter overlapping the first electrode. The display panel according to claim 4, further comprising a second electrode overlapping with the first electrode and to which a common electrode is applied, wherein the first electrode or the second electrode includes a plurality of slits. A substrate on which a thin film transistor is disposed;
A first electrode electrically connected to the thin film transistor;
A roof layer disposed over the first electrode and defining a cavity overlying the first electrode, the roof layer comprising an organic insulating material;
An orientation film disposed in the cavity and in contact with the roof layer; And
And a liquid crystal layer disposed in the cavity and in contact with the alignment layer. The display panel according to claim 6, wherein the roof layer is a color filter. The display panel according to claim 6, further comprising a color filter overlapping with the first electrode. Forming a first electrode electrically connected to the thin film transistor and the thin film transistor;
Coating a positive photoresist composition on the first electrode to form a sacrificial layer;
Exposing and developing the sacrificial layer to form a sacrificial pattern;
Coating a negative photoresist composition to form a roof layer in contact with the sacrificial pattern; And
And removing the sacrificial pattern to form a cavity. The method of manufacturing a display panel according to claim 9, wherein the positive photoresist composition comprises a polyamide-based compound, a photosensitive quinone diazide compound, and a first solvent. 11. The method of claim 10, wherein the negative photoresist composition comprises an acrylic compound, a photoinitiator, and a second solvent, wherein the roof layer covers the sacrificial pattern as a whole. The method according to claim 11, wherein the polyamide-based compound is insoluble in the second solvent and the acrylic compound is insoluble in the first solvent. 11. The method of claim 10, wherein the first solvent is selected from the group consisting of propylene glycol monomethyl ether (PGME), cyclohexanone, ethyl lactate (EL), gamma-butyrolactone -butyrolactone, GBL, N-methylpyrrolidione (NMP), and the like. 12. The method of claim 11, wherein the second solvent comprises propylene glycol methyl ether acetate (PGMEA). The method according to claim 10, wherein the negative photoresist composition comprises an acrylic compound, a photoinitiator, a colorant, and a second solvent, wherein the roof layer is a color filter partially covering the sacrificial pattern . 16. The method of claim 15, further comprising forming a protective layer covering the color filter. 10. The method of claim 9, further comprising forming a color filter overlapping the first electrode and disposed below the first electrode. The method of claim 9, wherein the cavity has a tunnel shape. 19. The method of claim 18, wherein the sacrificial pattern is provided with an amide stripper to remove the sacrificial pattern. The method of claim 9, further comprising forming a liquid crystal layer by injecting a liquid crystal material into the cavity.

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