KR20160028395A - Chemical Vapor Deposition Process and Coated Article - Google Patents

Abstract

A chemical vapor deposition process and a coated article are disclosed. The chemical vapor deposition process comprises: a step of positioning an article in a chemical vapor deposition chamber; a step of introducing a deposition gas to the chemical vapor deposition chamber at the sub-decomposition temperature which is below the thermal decomposition temperature of the deposition gas; and a step of heating the chamber to be at the super-decomposition temperature which is equal to or above the thermal decomposition temperature of the deposition gas resulting in a deposited coating on at least a surface of the article from the introduction of the deposition gas. The chemical vapor deposition process remains in a pressure range of 0.01 and 200 psia and the deposition gas is dimethylsilane. The coated article comprises a corrodible substrate and a corrosion resistant deposited coating on the substrate, wherein the deposited coating includes silicon on the substrate.

Description

[0001] Chemical Vapor Deposition Process and Coated Article [0002]

This application claims priority and benefit of U.S. Provisional Patent Application No. 62 / 045,168, filed September 3, 2014, entitled " Chemical Vapor Deposition Process and Coated Article, " which is incorporated herein by reference in its entirety.

Invention field

The present invention relates to a chemical vapor deposition process. More specifically, the present invention relates to a chemical vapor deposition process and a coated article using a process such as at least initially starting deposition at a temperature below the thermal decomposition temperature of the deposition gas.

Often, the surface of the substrate does not include the required performance characteristics. Failure to include the specific performance characteristics required may result in surface degradation in certain circumstances, or failure to meet specific performance requirements, or both. For example, in certain circumstances, metallic, glass, and ceramic surfaces can become worn or otherwise undesirable surface effects such as chemisorption, catalytic activity, corrosion attack, oxidation, side-accumulation or traction, and / Action can occur.

Unwanted surface effects can lead to combinations of other molecules chemisorption, reversible and irreversible physical adsorption of other molecules, catalytic reactivity with other molecules, attack of external species, molecular decomposition of the surface, physical loss of the substrate, or enumerated conditions .

The silicon hydride surface and the unsaturated hydrocarbon reagent may be reacted in the presence of a metal catalyst to provide the required specific performance characteristics. This process has the disadvantage that it is often difficult to completely remove the catalyst in the treated system, and that undesired surface action can occur again if the catalyst is present. In addition, amorphous silicon-based chemical vapor deposition materials are susceptible to degradation by highly corrosive pH media and thus their use in these environments is limited.

Chemical vapor deposition has been used to deposit materials at higher temperatures than the thermal decomposition temperature of the materials to produce coatings with improved properties. But more improvement is needed.

There is a need in the art for chemical vapor deposition processes and coatings that exhibit one or more improvements over prior art.

In one embodiment, the chemical vapor deposition process includes placing an article in a chemical vapor deposition chamber; Injecting a deposition gas into the chemical vapor deposition chamber at a sub-decomposition temperature lower than the thermal decomposition temperature of the deposition gas; And then heating the chamber to a super-decomposition temperature above the thermal decomposition temperature of the deposition gas to produce a deposition coating on at least one surface of the article from the deposition of the deposition gas. The chemical vapor deposition process is maintained within a pressure range of 0.01 psia to 200 psia.

In another embodiment, the chemical vapor deposition process includes placing an article in a chemical vapor deposition chamber; Thereafter, injecting dimethylsilane into the chemical vapor deposition chamber at a lower decomposition temperature lower than the thermal decomposition temperature of the dimethylsilane without a catalyst; And then heating the chamber to an upper decomposition temperature above the thermal decomposition temperature of the dimethyl silane to form a deposition coating on at least one stainless steel surface of the article from the deposition of the deposition gas.

In yet another embodiment, the coated article includes a substrate susceptible to corrosion and depositioncoding containing silicon on the substrate, wherein one or both of the substrates are subjected to the same process upon exposure to 15% NaClO by deposition coating on the substrate But exhibits corrosion resistance at a rate greater than 5% greater than that of the coating when the deposition gas is not injected at the sub-decomposition temperature, and the substrate upon which the deposition coating is applied provides 15% NaClO corrosion of 0-3 mils per year.

Other features and advantages of the present invention will become apparent from the following detailed description, taken in conjunction with the accompanying drawings, which illustrate, by way of example, the principles of the invention.

1 is a schematic perspective view of a chemical vapor deposition chamber during a chemical vapor deposition process to form a coating product in accordance with the present disclosure;
Figure 2 shows a corrosion data plot of a coated product formed by deposition at various temperatures followed by exposure to 15% NaClO according to the disclosed embodiment.
Figure 3 shows a corrosion data plot of a coating product formed by deposition at various temperatures followed by exposure to 6 mol / L HCl according to the disclosed embodiment.
Figure 4 shows a plot of the electrochemical impedance spectroscopy for up to 8 days for a coating product formed by chemical vapor deposition in which a deposition gas is injected at a temperature lower than the thermal decomposition temperature of the deposition gas according to the disclosed embodiment.
Figure 5 shows a plot of the electrochemical impedance spectroscopy for up to 8 days for a coating product formed by chemical vapor deposition in which a deposition gas is implanted at a temperature above the thermal decomposition temperature of the deposition gas, in accordance with the disclosed embodiment.
Wherever possible, the same reference numbers will be used throughout the drawings to refer to the same parts.

A chemical vapor deposition process and articles coated with this process are provided. For example, the present disclosure allows for the reduction of impedance degradation, corrosion reduction, increased coating density, or other suitable functions and advantages to be exhibited at the initiation of the present invention, as compared to not including at least one of the functions disclosed herein , Improvement of the dielectric properties (e.g., having a linear or generally linear polarization field loop), improvement in wear resistance, use of more diverse materials (e.g., oxidative and / Permitting, or permitting a combination of the listed items.

Referring to Figure 1, in one embodiment, the chemical vapor deposition process 100 includes placing (step 102) the article 101 in the chemical vapor deposition chamber 103 and then actuating the chemical vapor deposition chamber 103 )). The operation of the chemical vapor deposition chamber 103 may include purifying the chemical vapor deposition chamber 103, introducing the deposition gas 111 into the chemical vapor deposition chamber 103 in the container / cylinder 107, heating the chemical vapor deposition chamber 103, Combination. Throughout the operation, the pressure can be adjusted or controlled within a certain range (e.g., from 0.01 psia to 200 psia, from 1.0 psia to 100 psia, from 5 psia to 40 psia) and from 1.0 psia, 5 psia, 40 psia, 100 psia, 200 psia or any suitable combination, Range or sub-range. For a person skilled in the art, the chemical vapor deposition chamber 103 can be understood as an inner oven region or a container within the inner region of the oven.

The arrangement of the article 101 (step 102) includes a technique for placing the article 101 in the chemical vapor deposition chamber 103. For example, suitable techniques include, but are not limited to, placing a number of articles 101 in a chemical vapor deposition chamber 103, depositing a number of articles 101 , Placing only one article 101 in the chemical vapor deposition chamber 103 and / or cleaning one or more of the one or more articles 101 before or during placement in the chemical vapor deposition chamber 103 For example, removing debris, dust, grease or other foreign matter.

The purge during operation (step 104) includes selectively using the purge gas 105 in the chemical vapor deposition chamber 103 in an evacuated or substantially evacuated state. The purge gas 105 is nitrogen, helium, argon or other suitable inert gas. The purge operation includes injecting the purge gas 105 into the chemical vapor deposition chamber 103. The purge operation may consist of one purge cycle, two purge cycles, three purge cycles, three purge cycles, or an appropriate number of purge cycles, thereby making the chemical vapor deposition chamber 103 chemically inert.

After purging, the operation (step 104) includes the injection and / or decomposition of the deposition gas 111. Suitable types of deposition gases 111 include, but are not limited to, organosilanes, dimethylsilanes, silane gases, or other suitable chemical deposition gases. Other materials suitable for injection and / or subsequent processing include, but are not limited to, trimethylsilane, dihydroxy dialkylsilyl, tricyclic alkylsilyl, organofluorotrialkoxysilane, and / or organofluorosilylhydride . In a further embodiment, the deposition gas 111 does not contain a nitrogen-containing species such as aminosilane.

The deposition gas 111 is injected at a lower decomposition temperature which is lower than the thermal decomposition temperature of the deposition gas 111. [ As used herein, "sub-decomposition temperature" means that the deposition gas 111 does not produce coatings in excess of 100 angstroms, can not be visually identified, can not be detected through infrared testing, Indicates a combined condition. Suitable sub-decomposition temperatures, depending on the type of deposition gas 111, include, but are not limited to, less than 30 占 폚, less than 60 占 폚, less than 100 占 폚, less than 150 占 폚, less than 200 占 폚, less than 250 占 폚, Less than 350 占 폚, less than 400 占 폚, less than 440 占 폚, less than 450 占 폚, 100 占 폚 to 300 占 폚, 125 占 폚 to 275 占 폚, 200 占 폚 to 300 占 폚, 230 占 폚 to 270 占 폚, Or sub-ranges.

In one embodiment, at least when operating the chemical vapor deposition chamber 103 during the deposition of the deposition gas 111 (step 104), when the catalyst is substantially absent (e.g., ), Does not exist (e.g., does not exist at a detectable level, or does not exist at all).

During the chemical vapor deposition chamber 103 operation (step 104) during and / or after the deposition gas 111 injection process, the chemical vapor deposition chamber 103 is exposed to the atmosphere of the deposition gas 111 in the chemical vapor deposition chamber 103 Heating to an upper decomposition temperature above the decomposition temperature. As used herein, "upper decomposition temperature" refers to a condition in which coatings are generated in excess of 100 angstroms, can be visually identified, can be detected through infrared testing, or combine the listed items.

Heating the chemical vapor deposition chamber 103 to an upper decomposition temperature in the presence of the deposition gas 111 produces a deposition coating 109 on at least one surface 113 of the article 101. In one embodiment, surface 113 may be formed from a stainless steel surface (martensitic or austenitic), a nickel based alloy, a metal surface, a metallic surface (iron or nonferrous, reinforced or unreinforced and / or equiaxed, directionally a ceramic surface, a ceramic matrix composite surface, a ceramic matrix composite surface, a composite metal surface, a coating surface, a fiber surface, a foil surface, a film, a polymer surface (e.g., polytetrafluoro Ethylene) and / or other suitable surface that can withstand the operating conditions of process 100.

In the following embodiments, one or more components of surface 113 are below a concentration value. For example, in some embodiments in which copper is included, the concentration value may range from 5%, 1.2%, 1%, 0.9%, 0.4%, 0.15% to 0.4%, 0.01% to 1.2%, 0.03% to 5% % To 0.9%, or any suitable combination, subcombination, range or subrange thereof. In some embodiments where magnesium is included, the concentration value may be in the range of 3%, 1.5%, 1.2%, 0.2% to 3%, 0.01% to 2%, 0.05% to 1.5%, 0.8% to 1.2% Sub-combination, range, or sub-range. In some embodiments in which manganese is included, the concentration value may range from 2%, 1.8%, 1.5%, 1.4%, 0.15%, 0.02% to 1.4%, 0.03% to 1.5%, 0.05% to 1.8%, 1% Or any suitable combination, subcombination, range or sub-range thereof. In a further embodiment, the concentration value is less than the sum of, for example, 8.5%, 5.6%, 4.2%, or an appropriate combination, subcombination, range or subrange of these values, associated with one or more components.

The chemical vapor deposition chamber 103 is heated at a suitable heating rate from the lower decomposition temperature to the upper decomposition temperature. Suitable heating rates include, but are not limited to, 6 ° C per minute to 400 ° C per minute, 20 ° C per minute to 30 ° C per minute, 20 ° C per minute to 50 ° C per minute, 50 ° C per minute to 100 ° C per minute, 10 ° C per minute to 30 ° C per minute , Greater than 10 ° C per minute, greater than 20 ° C per minute, greater than 30 ° C per minute, greater than 40 ° C per minute, greater than 50 ° C per minute, greater than 100 ° C per minute, less than 100 ° C per minute, less than 50 ° C per minute, less than 40 ° C per minute, , 20 ° C per minute, 20 ° C per minute, 30 ° C per minute, 40 ° C per minute, 50 ° C per minute, or any suitable combination, subcombination, range or subrange thereof. At such a rate, in one embodiment, the chemical vapor deposition chamber 103 is exposed for a period of 3 to 10 minutes, 5 to 10 minutes, 7 to 10 minutes, 3 to 7 minutes, 3 to 5 minutes, Sub-combination, range or sub-range of time.

Suitable upper decomposition temperatures, depending on the type of deposition gas 111, include, but are not limited to, 300 占 폚 to 600 占 폚, 380 占 폚 to 420 占 폚, 400 占 폚 to 460 占 폚, 420 占 폚 to 460 占 폚, 400 ° C to 600 ° C, 450 ° C to 600 ° C, 500 ° C to 600 ° C, more than 400 ° C, more than 450 ° C, more than 460 ° C, more than 480 ° C, more than 500 ° C, less than 600 ° C, Less than 450 < 0 > C, or any suitable combination, subcombination, range or sub-range thereof.

Operation (step 104) includes other appropriate processing of the article 101. Suitable treatments include, but are not limited to, oxidation of surface 113 and / or deposition coating 109, functionalization of surface 113 and / or deposition coating 109, or combinations thereof. In one embodiment, the surface 113 and / or the deposition coating 109 is oxidized at the oxidation temperature to form an oxide coating (not shown). Depending on the particular material, the oxidation temperature may be, but is not limited to, 100 占 폚 to 500 占 폚, 300 占 폚 to 350 占 폚, 280 占 폚 to 320 占 폚, 440 占 폚 to 460 占 폚, or any suitable combination, subcombination, It can be sub-range. In one embodiment, the surface 113 and / or the deposition coating 109 can be functionalized by implanting trimethylsilane.

The deposition coating 109 includes properties corresponding to the parameters of actuation (step 104). For example, the deposition coating 109 provides corrosion and impedance characteristics based on the operation of the chemical vapor deposition chamber 103 during operation 100 (step 104). Suitable thicknesses of the deposition coating 109 include, but are not limited to, 100 nm to 10,000 nm, 200 nm to 5,000 nm, 300 nm to 1500 nm, 150 angstroms to 450 angstroms, 350 angstroms to 450 angstroms, 100 angstroms, , Greater than 300 angstroms, greater than 400 angstroms, greater than 450 angstroms, or any suitable combination, subcombination, range, or subrange thereof.

In one embodiment, the corrosiveness of the deposition coating 109 provides significantly longer resistance to 15% NaClO than the comparative coating by deposition at or above the thermal decomposition temperature of the cracking gas 111. For example, in the embodiment of the article 101 in which the deposition coating 109 formed with the process 100 is used, the corrosion degree 201 (for example, : Annual mil unit) is reduced. For example, at a thermal decomposition temperature 205 (e.g., 占 폚) of the deposition gas 111, the corrosion for deposition is also reduced to a range of 5% to 10% of 203. Likewise, in the embodiment of the article 101 in which the deposition coating 109 formed in the process 100 is used, the degree of corrosion 201 is reduced by deposition at a thermal decomposition temperature 205 or higher of the deposition gas 111 Lt; RTI ID = 0.0 > to 17 < / RTI > mils per year compared to the corrosion rate for the comparative coating formed. In various embodiments, the corrosion resistance to 15% NaClO is 0-3 mils per year, 0-2 mils per year, 0-1 mils per year, 1 mils per year, 2 mils per year, 3 mils per year, or any suitable combination, subcombination, range or subrange thereof .

In one embodiment, the corrosiveness of the deposition coating 109 provides a longer resistance to 6M HCl than the comparative coating formed by deposition at a thermal decomposition temperature 305 or higher of the decomposition gas 111. For example, in the embodiment of the article 101 in which the deposition coating 109 formed with the process 100 is used, as shown in Fig. 3, the corrosion degree 301 (In millimeters per year) is reduced to 60% to 90% of the degree of corrosion 303 for the comparative coating formed by deposition at a thermal decomposition temperature 305 (e.g., 占 폚) or higher of the deposition gas 111. Likewise, in the embodiment of the article 101 in which the deposition coating 109 formed in the process 100 is used, the degree of corrosion is reduced to a value in the range of 0.5 mil to < RTI ID = 3mil lowered. In various embodiments, the corrosion resistance to 6M HCl may be from 0 to 0.5 mils per year, from 1 to 1.5 mils per year, from 1.5 to 2.5 mils per year, from 2.5 to 3 mils per year, from 2 to 3 mils per year, from 2.5 to 3.5 mils per year, , Sub-combinations, ranges, or sub-ranges.

In one embodiment, the impedance characteristic (quantitative representation of impermeability) of the deposition coating 109 includes a reduction in impedance degradation as compared to a comparative coating formed by deposition at or above the thermal decomposition temperature of the decomposition gas 111 . For example, referring to Example 3 as shown in Figures 4-5, in an embodiment of the article 101 in which the deposition coating 109 formed with the process 100 is used, an electrochemical impedance spectroscopy Impedance deterioration is less than in the case of saltwater exposure for 8 days. In one embodiment, the impedance of the deposition coating 109 appears to increase self-passivation after initial deterioration (e.g., after one day).

4, in one embodiment, the impedance 401 (in ohms) of the deposition coating 109 is substantially linear at a frequency 403 (e.g., 100 Hz to 100,000 Hz), regardless of the brine exposure. Impedance 401 at a frequency below 100 Hz indicates a significant deterioration, but exhibits significantly less deterioration than the comparative impedance 501 (in ohms) of the comparative coating (see FIG. 5).

In one embodiment, the deterioration of the deposition coating 109 during 8 days and / or a shorter period (e.g., 1 day or 6 days) is less than 1 megohm. In a further embodiment, the deterioration is less than 0.9 megohms, less than 0.7 megohms, less than 0.6 megohms, 0.5 megohms to 0.9 megohms, 0.872 megohms, 0.659 megohms, 0.556 megohms, , Range, or subrange. Also, in one embodiment, the degradation of the deposition coating 109 is less than 30%. In a further embodiment, the degradation is less than 23%, less than 20%, 18% to 30%, 20% to 30%, 18% to 23%, 29%, 22%, or 19% , Range, or subrange.

In one embodiment, the degradation of the deposition coating 109 upon exposure to salt water for the same period of time and the thermal degradation temperature of the decomposition gas 111 or above is greater than 0.7 megohms . In a further embodiment, the difference is greater than 1 megohm, greater than 2 megohms, 0.7 megohms to 2.2 megohms, 2 megohms to 2.2 megohms, 0.7 megohms to 2.1 megohms, 0.762 megohms, 2.007 megohms, 2.166 Megaohm, or any suitable combination, subcombination, range, or subrange thereof. Further, in one embodiment, the deterioration of the comparative coating formed by the deposition at the thermal decomposition temperature of the decomposition gas 111 or more and the deterioration of the deposition coating 109 when exposed to the brine for the same period exceeds 45% , Greater than 75%, greater than 79%, 45% to 80%, 45% to 76%, 75% to 80%, 46.63%, 75.28%, or 79.57%, or any suitable combination, subcombination, .

Example

The corrosion resistance of the deposition coating 109 in the first embodiment can be improved by applying 15% NAClO to the various embodiments of the deposition coating 109 formed by implanting dimethylsilane into the deposition gas 111, And compared with a comparative coating formed by evaporation at a decomposition temperature (450 DEG).

As shown in FIG. 2, the corrosion resistance of the deposition coating 109 provides significantly more corrosion resistance to 15% NaClO than the comparative coating 203. For example, the corrosion rate of the comparative coating 203 is 9 to 18 mils per year, while in all embodiments of the deposition coating the corrosion rate 201 is reduced to less than 1 mil per year.

In particular, the corrosion rate of embodiments with a sub-decomposition temperature of 27 占 폚 is 0 to 0.2 mil per year. The corrosion rate of embodiments with a sub-decomposition temperature of 100 占 폚 is 0 to 0.5 mil per year. The corrosion rate of embodiments with a sub-decomposition temperature of 250 占 폚 is 0.2 to 0.5 mil per year. The corrosion rate of embodiments with a sub-decomposition temperature of 300 占 폚 is 0.1 to 0.3 mil per year. The corrosion rate of the embodiment having a sub-decomposition temperature of 350 占 폚 is 0.2 to 0.4 mil per year. The corrosion rate of embodiments with a sub-decomposition temperature of 400 占 폚 is 0.2 to 0.4 mil per year.

In the second embodiment, the corrosion resistance of the deposition coating 109 was tested by applying 6M HCl to the deposition coating 109. [ As shown in FIG. 3, the corrosion resistance of the deposition coating 109 provides corrosion resistance to 6M HCl equal to or longer than the comparative coating. For example, the corrosion rate 303 of the comparative coating is 0.5 to 5 mils per year, while the corrosion rate 301 is reduced to less than 3.5 mils per year in all embodiments of the deposition coating.

In particular, the corrosion rate of an embodiment having a sub-decomposition temperature of 27 占 폚 is 1 to 1.5 mil per year. The corrosion rate of an embodiment having a sub-decomposition temperature of 100 DEG C is 1.75 to 2 mils per year. The corrosion rate of embodiments with a sub-decomposition temperature of 250 占 폚 is 0.4 to 0.6 mil per year. The corrosion rate of embodiments with a sub-decomposition temperature of 300 占 폚 is 2.5 to 3 mils per year. The corrosion rate of embodiments with a sub-decomposition temperature of 350 占 폚 is 2.2 to 2.9 mil per year. The corrosion rate of an embodiment having a sub-decomposition temperature of 400 占 폚 is 2.5 to 3.5 mils per year.

In the third embodiment, the impedance characteristics of the deposition coating 109 were tested by electrochemical impedance spectroscopy. As shown by comparing FIG. 4 (corresponding to the embodiment of the deposition coating 109) to FIG. 5 (corresponding to the comparison coating), the impedance deterioration of the deposition coating 109 was considerably reduced as compared to the comparative coating. For example, at frequencies below 100 Hz, impedance 401 exhibits a significant deterioration, but exhibits significantly less deterioration than comparative impedance 501 of the comparative coating.

Referring to Figure 4 in particular, the deterioration of the deposition coating 109 for 8 days was 2.988 megohms at 405 on day 0, 2.116 megohms at 407 at day 40, 2.329 megohms at 409 on day 6, 2.432 megohms at 411 on day 8, Based on the measurements, there are 0.872 megohms for one day, 0.659 megohms for six days, and 0.556 megohms for eight days. Referring to Figure 5 in comparison, the deterioration of the comparative coating for 8 days was measured at 503 to 2.822 megohms on day 0, 1.188 megohms on day 505, 0.156 megohms on day 6 507, 0.100 megohms on day 850 , 1.634 megohms for one day, 2.666 megohms for 6 days, and 2.722 megohms for 8 days.

While the invention has been described with reference to one or more embodiments, it will be understood by those skilled in the art that various changes may be made and equivalents may be substituted for elements thereof without departing from the scope of the invention. In addition, many modifications may be made to adapt a particular situation or material to the teachings of the invention without departing from the essential scope thereof. Accordingly, it is intended that the invention not be limited to the particular embodiment disclosed as the best mode contemplated for carrying out the invention, including all embodiments falling within the scope of the appended claims. Also, since both the correct value and the approximate value are explicitly confirmed, all the numerical values confirmed in the detailed explanation are described.

Claims (20)

Disposing the article in a chemical vapor deposition chamber; next
Injecting a deposition gas into a chemical vapor deposition chamber at a sub-decomposition temperature lower than the thermal decomposition temperature of the deposition gas; And then
Generating a deposition coating on at least one surface of the article from injection of a deposition gas by heating the chamber to a super-decomposition temperature above the thermal decomposition temperature of the deposition gas,
Wherein the chemical vapor deposition process is maintained at a pressure range of 0.01 psia to 200 psia.
The method of claim 1, wherein the deposition gas comprises an organosilane.
The method of claim 1, wherein the deposition gas comprises dimethylsilane.
The method of claim 1, wherein the deposition gas comprises a silane gas.
2. The method of claim 1, comprising cleaning and evacuating the chemical vapor deposition chamber between placement and implantation.
The process according to claim 1, wherein the sub-decomposition temperature is from 100 캜 to 450 캜.
The process according to claim 1, wherein the sub-decomposition temperature is from 100 캜 to 300 캜.
The method of claim 1, wherein the chamber is heated at a rate of from 6 ° C to 10 ° C per minute to a lower decomposition temperature to an upper decomposition temperature.
The process according to claim 1, wherein the thermal decomposition temperature is from 440 캜 to 460 캜.
The method of claim 1, wherein the upper decomposition temperature is greater than 440 ° C.
The method of claim 1, wherein substantially no catalyst is present during the deposition of the deposition gas into the chemical vapor deposition chamber.
The method of claim 1, wherein no catalyst is present during the deposition of the deposition gas into the chemical vapor deposition chamber.
The method of claim 1, wherein the surface is a stainless steel surface.
The method of claim 1, wherein the surface is a nickel-based alloy.
The method of claim 1, further comprising oxidizing the deposition coating at an oxidation temperature of from 300 캜 to 350 캜 to form an oxidized coating.
16. The method of claim 15, Further comprising injecting trimethylsilane into the deposition coating at a functionalization temperature of 400 < 0 > C to 500 < 0 > C to functionalize the oxidized coating.
The method of claim 1, wherein the deposition coating provides the corrosion resistance at a rate greater than 5% greater than that of the uncoated coating at the sub-decomposition temperature, even though the same process was applied when exposed to 15% NaClO.
The method of claim 1, wherein the deposition coating provides 15% NaClO corrosion of 0 to 3 mils per year. Disposing the article in a chemical vapor deposition chamber; next
Injecting dimethylsilane into the chemical vapor deposition chamber at a sub-decomposition temperature lower than the thermal decomposition temperature of the dimethylsilane, without a catalyst; And then
Forming a deposition coating on the at least one stainless steel surface of the article from the injection of the deposition gas by heating the chamber to an upper decomposition temperature above the thermal decomposition temperature of the dimethylsilane.
Corrosive susceptible substrates and
A coated article comprising a deposition coating having silicon on a substrate,
Coated articles having one or both of the following:
The substrate was subjected to the same process when exposed to 15% NaClO by deposition coating of the substrate, but at a sub-decomposition temperature to provide corrosion resistance at a rate greater than 5% greater than that of the uncoated coating; And
The substrate with the deposition coating provides 15% NaClO corrosion of 0 to 3 mils per year.

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