KR20150129901A - Micro channel reactor and micro channel heat exchanger with indicator - Google Patents

Micro channel reactor and micro channel heat exchanger with indicator Download PDF

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Publication number
KR20150129901A
KR20150129901A KR1020140056432A KR20140056432A KR20150129901A KR 20150129901 A KR20150129901 A KR 20150129901A KR 1020140056432 A KR1020140056432 A KR 1020140056432A KR 20140056432 A KR20140056432 A KR 20140056432A KR 20150129901 A KR20150129901 A KR 20150129901A
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South Korea
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plate
heat transfer
gas
reforming
gas supply
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KR1020140056432A
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Korean (ko)
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박종수
이동욱
황경란
이신근
이춘부
이성욱
진민호
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한국에너지기술연구원
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Publication of KR20150129901A publication Critical patent/KR20150129901A/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/24—Stationary reactors without moving elements inside
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/32—Packing elements in the form of grids or built-up elements for forming a unit or module inside the apparatus for mass or heat transfer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J8/00—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B3/00—Hydrogen; Gaseous mixtures containing hydrogen; Separation of hydrogen from mixtures containing it; Purification of hydrogen
    • C01B3/02—Production of hydrogen or of gaseous mixtures containing a substantial proportion of hydrogen
    • C01B3/32—Production of hydrogen or of gaseous mixtures containing a substantial proportion of hydrogen by reaction of gaseous or liquid organic compounds with gasifying agents, e.g. water, carbon dioxide, air
    • C01B3/34—Production of hydrogen or of gaseous mixtures containing a substantial proportion of hydrogen by reaction of gaseous or liquid organic compounds with gasifying agents, e.g. water, carbon dioxide, air by reaction of hydrocarbons with gasifying agents
    • C01B3/38—Production of hydrogen or of gaseous mixtures containing a substantial proportion of hydrogen by reaction of gaseous or liquid organic compounds with gasifying agents, e.g. water, carbon dioxide, air by reaction of hydrocarbons with gasifying agents using catalysts
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/40—Carbon monoxide

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • Hydrogen, Water And Hydrids (AREA)

Abstract

The present invention relates to a microchannel reactor and a microchannel heat exchanger, capable of laminating without an error during assembling by laminating a plate having a fine flow path, and confirming a lamination order to be accurately formed after lamination. The reactor and the heat exchanger are capable of reducing assembly intensity by assembling while confirming only a display unit formed on the plate, and preventing an error which can be generated during assembling. In addition, product inspection can be easily performed even after completing the microchannel reactor and micro channel heat exchanger.

Description

[0001] The present invention relates to a microchannel reactor and a microchannel heat exchanger having a display unit,

The present invention relates to a microchannel reactor having a display unit and a microchannel heat exchanger, and more particularly to a microchannel heat exchanger having a microchannel heat exchanger having a display unit. More particularly, A microchannel reactor, and a microchannel heat exchanger.

Micro Channel Reactor is suitable as a reactor configuration technology with a high heat or endothermic quantity because it has excellent contact efficiency with heat transfer and reactant and has a very high heat flux required for cooling or heating per unit volume. With this configuration, a large amount of reactant can be treated while using a small amount of catalyst in various catalytic reactors.

Since the microchannel reactor is formed by laminating a plurality of plates, the order and direction of lamination must be accurately performed. As a result, there is a problem that it is impossible to confirm whether the assembling is surely performed after assembling by increasing labor intensity during assembly.

Korean Patent No. 10-1207834

SUMMARY OF THE INVENTION It is an object of the present invention, which has been devised to solve the problems described above, to provide a microchannel reactor and a microchannel reactor, which can laminate plates having microchannels to be stacked without error during assembly, And to provide a heat exchanger.

In order to proceed the chemical reaction, it is necessary to remove the heat absorbed by the reaction or the heat generated during the reaction. To achieve this, high temperature heating or cooling with a low temperature refrigerant is required. This process is shown in Equation (1).

[Equation 1]

Q = k x A x DELTA T / DELTA L

Where Q is the heat transfer rate, k is the inherent heat transfer coefficient of the material constituting the reactor, A is the heat transfer area, ΔT is the temperature difference between the high and low temperatures, and ΔL is the heat transfer distance.

In order to maximize the heat transfer rate, it is possible to increase the heat transfer rate by increasing the temperature difference between both sides. However, this is problematic from the viewpoint of economy and efficiency, but it provides a compact reactor because a large amount of heat can be transferred in a small volume when a microchannel reactor (simultaneous heat exchanger) using a thin plate is constructed.

The characteristic of the reactor configuration is that it can scale up a number of unit cells and can manage the parts with a small amount of component parts. On the other hand, among the hundreds of laminated sheets, there is a lot of difficulty in the lamination (assembly) process because only one can not function when the direction is reversed or inverted.

Therefore, in order to simplify the above process, the present invention can easily identify the component parts by marking them on the sides of the component parts, and also provide ease of QC of the products after lamination or fabrication.

A reactor configuration example will be described using the above principle. In this constitutional example, a microchannel reactor for producing synthesis gas using hydrocarbon is shown as [Scheme 1].

[Reaction Scheme 1]

CH 4 + H 2 O? CO + 3H 2 O, reaction heat = 212 kJ / mol

In order to accomplish the above object, the present invention is a microchannel heat exchanger or a microchannel reactor including at least one thin plate having a display portion formed at an edge thereof and having a microchannel through which a fluid can flow.

The microchannel heat exchanger is completed by laminating thin plates each having a micro flow path so as to form independent flow paths for mutual heat exchange of the proceeding fluids so as not to be mixed with each other.

In the case of a microchannel reactor, not only a chemical reaction but also a heat exchange is carried out, and various forms can be changed. Therefore, various microchannel reactors can be considered as follows.

An upper plate having a heat transfer gas supply pipe connected to a heat transfer gas supply source to supply heat transfer gas and a reformed gas discharge pipe for discharging the reformed gas; A lower plate connected to the source gas supply source to supply a source gas, a lower plate having a heat transfer gas discharge pipe for discharging the heat transfer gas; A heat transfer plate disposed between the upper plate and the lower plate and having a heat transfer gas flow path formed therein for modifying the source gas to heat the heat transfer gas and a reforming catalyst plate having a feed gas flow path formed therein, Wherein at least one side of the heat transfer plate and the reforming catalyst plate is provided with a display portion which is observable from the outside.

According to another aspect of the present invention, there is provided a plasma display panel comprising: an upper plate having a heat transfer gas supply pipe connected to a heat transfer gas supply source to supply a heat transfer gas, and a reformed gas discharge pipe for discharging the reformed gas; A lower plate connected to the source gas supply source to supply a source gas, a lower plate having a heat transfer gas discharge pipe for discharging the heat transfer gas; And a reforming portion disposed between the upper plate and the lower plate for reforming the source gas to heat the heat transfer gas, wherein the reforming portion includes a gas supply plate having a gas supply channel communicating with only the lower reformed gas flow channel; A reforming catalyst plate stacked on the gas supply plate and provided with a reforming catalyst; A collecting transfer plate stacked on the reforming catalyst plate and transferring the gas reformed by the reforming catalyst to the upper reforming gas passage; And a heating plate disposed on the lower side of the gas supply plate or on the upper side of the collecting transfer plate and having a heating channel communicating the upper heat transfer gas flow path and the lower heat transfer gas flow path, The collecting transfer plate and the heating plate each have a first reforming through hole communicating with the upper reforming gas passage, a second reforming through hole communicating with the upper heat transfer gas passage, a third reforming passage communicating with the lower reforming gas passage, And a fourth modified through-hole communicating with the lower heat transfer gas flow path, wherein at least one side of the gas supply plate, the reforming catalyst plate, the collecting transfer plate, and the heating plate has a display portion Is formed in the microchannel reactor.

According to another aspect of the present invention, there is provided a plasma display panel comprising: an upper plate having a heat transfer gas supply pipe connected to a heat transfer gas supply source to supply a heat transfer gas, and a reformed gas discharge pipe for discharging the reformed gas; A lower plate connected to the source gas supply source to supply a source gas, a lower plate having a heat transfer gas discharge pipe for discharging the heat transfer gas; An upper heat transfer gas flow path disposed at a lower portion of the upper plate and connected to the heat transfer gas supply pipe to transfer the heat transfer gas, and an upper reforming gas flow path connected to the upper heat transfer gas flow path, An upper heat transfer part having an upper heat transfer part; A lower heat transfer gas flow path disposed above the lower plate and connected to the heat transfer gas discharge pipe to transfer the heat transfer gas and a lower reforming gas flow path connected to the raw material gas supply pipe to be in contact with the lower heat transfer gas flow path, A lower heat transfer part; And a reforming part in which at least one of the reforming parts is stacked between the upper heat transfer part and the lower heat transfer part, wherein the reforming part has a gas supply channel ; A reforming catalyst plate stacked on the gas supply plate and provided with a reforming catalyst; A collecting transfer plate stacked on the reforming catalyst plate and transferring the gas reformed by the reforming catalyst to the upper reforming gas passage; And a heating plate disposed on the lower side of the gas supply plate or on the upper side of the collecting transfer plate and having a heating channel communicating the upper heat transfer gas flow path and the lower heat transfer gas flow path, The collecting transfer plate and the heating plate each have a first reforming through hole communicating with the upper reforming gas passage, a second reforming through hole communicating with the upper heat transfer gas passage, a third reforming passage communicating with the lower reforming gas passage, And a fourth modified through-hole communicating with the lower heat transfer gas flow path, wherein at least one side of the gas supply plate, the reforming catalyst plate, the collecting transfer plate, and the heating plate has a display portion Is formed in the microchannel reactor.

Here, the display portion may be a concave display groove formed of one or more, or a display print attached or printed on the side portion.

At this time, it is preferable that the display portion is formed on the same side of the gas supply plate, the reforming catalyst plate, the collecting transfer plate, and the heating plate.

According to the present invention, it is possible to assemble while confirming only the display portion formed on the plate, so that the assembly strength can be reduced, and mistakes that may occur during assembly can be prevented. In addition, it is easy to inspect the product even after completing the microchannel reactor.

1 is an exploded perspective view of a microchannel reactor according to a first embodiment of the present invention.
2 is an exploded perspective view of the upper heat transfer portion of FIG.
3 is an exploded perspective view of the reformer of FIG.
4 is a cross-sectional view of the reforming plate having the reforming catalyst and the reforming catalyst presser plate of FIG.
Figure 5 is an exploded perspective view of the lower heat transfer portion of Figure 2;
FIG. 6 is an external perspective view of the microchannel reactor of FIG. 2 after bonding; FIG.
7 is an external perspective view of a microchannel reactor according to a modification of the present invention after bonding.
8 is an exploded perspective view of a microchannel reactor according to a second embodiment of the present invention.
9 is an exploded perspective view of a microchannel heat exchanger according to an embodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings. In the drawings, the same reference numerals are used to designate the same or similar components, and the same reference numerals will be used to designate the same or similar components. Detailed descriptions of known functions and configurations are omitted.

The microchannel reactor 1000 according to the first embodiment of the present invention comprises a plurality of plates laminated as shown in FIG. 1, and they are joined by diffusion bonding, electric welding, arc welding, or the like, It becomes a compact form as it is.

In the microchannel reactor 1000, the upper plate 110 and the lower plate 120 are disposed on the uppermost and lowermost sides.

Between the upper plate 110 and the lower plate 120, an upper heat transfer part 200 for absorbing heat from the reformed gas discharged for preheating and combustion of the heat transfer gas, and a reforming part And a lower heat transfer part 400 for heating the reformed gas from the discharged heat transfer gas to a temperature sufficient for the reforming reaction. At this time, the upper heat transfer portion 200 and the lower heat transfer portion 400 may be omitted.

The upper plate 110 is connected to a heat transfer gas supply source (not shown) to form heat transfer gas supply pipes 112 and 114 for supplying heat transfer gas and a reformed gas discharge pipe 113 for discharging the reformed gas. The heat transfer gas supply pipes 112 and 114 may supply both fuel and air (or oxygen) to one pipe or supply fuel and air to the heat transfer gas supply pipes 112 and 114 as shown in FIG. 1 . In the first embodiment of the present invention, the fuel gas is supplied to the heat transfer gas supply pipe 112 disposed at the same position as the heat transfer gas discharge pipe 122 described below, and the air is supplied to the other heat transfer gas supply pipe 114.

An ignition catalyst for igniting the incoming fuel gas may be disposed in the heat transfer gas supply pipe 112. The complexing catalyst may be prepared by coating an oxide containing at least one of Al, Ti, Zr and Si components on the outer surface of the fiber woven with a metal component and coating a mixture of platinum and palladium on the oxide . When the ignition catalyst is placed in the heat transfer gas supply pipe 112 to use a gas containing a small amount of hydrogen in the fuel, the oxidation catalyst coating process may be omitted on the surface of the heat transfer channel of the heat transfer plate.

Particularly, the effect of disposing the ignition catalyst according to the present invention in the heat transfer gas supply pipe, that is, the effect of positioning the ignition point, is completely different from the structure in which the ignition catalyst is located in the heat transfer gas discharge pipe 122. That is, when the ignition catalyst is located in the heat transfer gas discharge pipe 122, in order to move the ignition point to the first mixing point of the fuel and the air, the size of the single micro flow path is quenching distance of the heat transfer area. Therefore, in order to maximize the heat transfer efficiency, it is preferable to place the ignition point in the heat transfer gas supply pipe or the upper part (not shown) of the heat transfer gas supply pipe as in the present invention, and to keep the groove diameter of the micro flow path smaller.

The reason why the position of the ignition point is located inside or outside the reformer is that it can perform the function because the fuel is naturally transferred to the first mixing point of fuel and air after ignition because it contains hydrogen in the fuel .

The support of the complexing catalyst may be produced by using a ceramic in the form of particles, tubes or rods. Alternatively, the object of the present invention can be achieved by using a high voltage discharge device using electricity.

The lower plate 120 is connected to a source gas supply source (not shown) to form a source gas supply pipe 121 for supplying the source gas and a heat transfer gas discharge pipe 122 for discharging the heat transfer gas.

The upper heat transfer part 200 is disposed at a lower portion of the upper plate 110 and is connected to the heat transfer gas supply pipes 112 and 114 to transfer heat to the upper heat transfer gas flow path, And an upper reforming gas flow path connected to the reforming gas discharge pipe 113.

The upper heat transfer unit 200 includes one or more upper heat transfer plates 210 and 230 having upper heat transfer channels 215 and 235 communicating with the heat transfer gas supply pipes 112 and 114 and forming an upper heat transfer gas flow path, And one or more upper reforming plates 220 and 240 which are alternately stacked with the upper heat transfer plates 210 and 230 while forming an upper reforming gas flow path. An upper shield plate 250 is disposed on the lowermost side of the upper heat transfer portion 200.

As shown in FIG. 2, first to fourth through holes are formed in the upper heat transfer plates 210 and 230 and the upper reforming plates 220 and 240, respectively. The first upper through holes 211, 221, 231 and 241, the second upper through holes 212, 222, 232 and 242, the third upper through holes 213 and 223, 233 and 243 and the fourth upper through holes 214, When the cross-sectional shape of the microchannel reactor 1000 has a quadrangular shape, it is preferable that the microchannel reactor 1000 is disposed in the vicinity of the vertex of the quadrilateral in terms of heat transfer utilization. Therefore, the first to fourth upper through-holes to the upper heat transfer plates 210 and 230 and the upper reforming plates 220 and 240 are disposed at the same positions in the upper and lower portions, respectively, to form a tube shape.

Accordingly, the upper heat transfer channels 215 and 235 communicate with the second upper through holes 212 and 232 and the fourth upper through holes 214 and 234, and at the same time, the first upper through holes 211 and 231 and the third upper through- (213, 233). The upper reforming channels 225 and 245 allow the first upper through holes 221 and 241 to communicate with the third upper through holes 223 and 243 and at the same time to connect the second upper through holes 222 and 242 and the fourth upper through- (224, 244).

The upper shield plate 250 includes only the first upper through-hole 251 and the second upper through-hole 252.

As a result, the upper heat transfer gas channel is connected to the upper shield plate 215 through the heat transfer gas supply pipes 112 and 114, the second upper through holes 212, 222, 232 and 242, the fourth upper through holes 214, 224, 234 and 244, And the second upper through-hole 252 of the second connector 250. The upper reforming gas passage is connected to the upper reforming gas outlet pipe 113 through the upper reforming channels 225 and 245 and the second reforming gas discharge pipe 113, the first upper through holes 211, 221, 231 and 241, the third through holes 213, And the first upper through hole 251 of the first through hole 250.

The lower heat transfer part 400 is disposed at an upper portion of the lower plate 120 and is connected to the heat transfer gas discharge pipe 122 to connect the lower heat transfer gas flow path through which the heat transfer gas flows, And a lower reforming gas channel connected to the raw material gas supply pipe 121 formed.

The lower heat transfer part 400 includes one or more lower heat transfer plates 420 and 440 having lower heat transfer channels 425 and 445 communicating with the heat transfer gas discharge pipe 122 and forming a lower heat transfer gas flow path, And one or more lower reforming plates 430 and 450 having lower reforming channels 435 and 455 communicating with the lower heat transfer plates 420 and 440 and forming the lower reforming gas flow path and being alternately stacked with the lower heat transfer plates 420 and 440. A lower shield plate 410 is disposed on the uppermost portion of the lower heat transfer portion 400.

As shown in FIG. 5, first through fourth through through holes are formed in the lower heat transfer plates 420 and 440 and the lower reforming plates 430 and 450, respectively. The first through holes 421, 431, 441 and 451, the second through holes 422, 432, 442 and 452, the third through holes 423, 433, 443 and 453 and the fourth through holes 424, 434, 444 and 454 are isolated from each other, When the cross-sectional shape of the microchannel reactor 1000 has a quadrangular shape, it is preferable that the microchannel reactor 1000 is disposed in the vicinity of the vertex of the quadrilateral in terms of heat transfer utilization. Accordingly, the first through fourth through holes are disposed at the same positions in the upper and lower portions of the lower heat transfer plate 420, 440 and the lower reforming plate 430, 450, respectively, to form a tube shape.

Accordingly, the lower heat transfer channels 425 and 445 communicate with the second lower through holes 422 and 442 and the fourth lower through holes 424 and 444, and at the same time, the first and second lower through holes 421 and 441, (423, 443). The lower reforming channels 435 and 455 allow the first lower through holes 431 and 451 to communicate with the third lower through holes 433 and 453 while simultaneously connecting the second lower through holes 432 and 452, (434, 454).

The lower shielding plate 410 is formed with only the third lower through hole 413 and the fourth lower through hole 414.

As a result, the lower heat transfer gas channel is connected to the lower shield plate 215 through the heat transfer gas discharge pipe 122, the second lower through holes 422, 432, 442, 452, the fourth lower through holes 424, 434, 444, 454, And the fourth lower through-hole 414 of the base 410. The lower reforming gas channel is connected to the lower interrupting plate 410 through the raw gas supply pipe 121, the first lower through holes 421, 431, 441, 451, the third through holes 423, 433, 443, 453, and the lower reforming channels 435, And the third lower through-hole 413 of the second through hole 413.

As shown in FIG. 3, the reforming unit 300 has a structure in which two or more layers can be stacked. The reforming unit 300 may include a gas supply plate 360 having a gas supply channel 365 communicating with the lower reforming gas supply channel, A reforming catalyst plate 350 on which the reforming catalyst 330 is installed, a gas delivery unit 350 disposed above the reforming catalyst plate 350 and adapted to transfer the gas reformed by the reforming catalyst 330 to the upper reforming gas passage; And a heating plate 310 disposed below the gas supply plate 360 or above the gas transmission unit and having a heating channel 315 for communicating the upper heat transfer gas passage and the lower heat transfer gas passage.

The first reforming through holes 311, 321, 351 and 361 communicating with the upper reforming gas flow passages are formed in the gas supply plate 360, the reforming catalyst plate 350, the gas delivery portion, and the heating plate 310, Third reformed through holes 313, 323, 353 and 363 communicating with the lower reformed gas flow path and fourth modified through holes 314, 324, 354 and 364 communicating with the lower heat transfer gas flow path are formed in the second reformed through holes 312, 322, 352 and 362, do. As a result, the first reforming through holes to the fourth reforming through holes are disposed at the same positions in the upper and lower portions when the reforming portion 300 is joined, and are formed into a tube shape.

Accordingly, the first through-hole through the fourth modified through-hole, the first through-hole through the fourth through-hole, and the first through fourth through through-holes may all be disposed at the same position .

In the heating plate 310, the heating channel 315 communicates the second reforming through hole 312 and the fourth reforming through hole 314, and the first reforming through hole 311 and the third reforming through- The reforming through holes 313 are isolated from each other.

The gas supply channel 365 in the gas supply plate 360 communicates only with the third modified penetration hole 363 and the first modified penetration hole 361, the second modified penetration hole 362, And is isolated with respect to the through hole 364.

A porous reforming catalyst presser plate 340 is disposed below the reforming catalyst 330 in the catalyst hole 355 formed at the center of the reforming catalyst plate 350. The reforming catalyst press plate 340 can be manufactured by attaching a mask to upper and lower sides of a metal plate and etching the plate. The reforming catalyst presser plate 340 and the reforming catalyst 330 protrude from the reforming catalyst plate 350 before bonding and are compressed by the compressive force at the time of bonding to have the same height as the upper surface of the reforming catalyst plate 350 , The contact efficiency of the reforming catalyst 330 can be increased.

The reforming catalysts 330 may be pressed from nickel powder (average particle diameter 2.0㎛) pressure 100 ~ 800 ㎏ f / ㎠ for the molding to have a thickness 0.3 ~ 3.0㎜. The formed body is sintered at 500 to 900 DEG C for 1 to 5 hours in a hydrogen gas atmosphere to impart strength. The reforming catalyst 330 may be changed depending on the raw material for reforming. Methane, light oil or gasoline, and may be manufactured using a fine metal powder mainly composed of copper, when ethanol or methanol is used as a raw material to produce synthesis gas.

The gas transfer unit may include a porous collection hole 325 disposed above the reforming catalyst plate 350 and isolated from the second modification through holes through the fourth modification through holes 322 323 324, The porous collecting hole 325 may include a collecting transfer plate 320 communicating with the first modified penetrating hole 321 by a connecting channel 326. The porous collecting hole 325 and the connection channel 326 can be fabricated through partial etching using a mask as described above.

The cross-sectional area of the porous collecting hole 325 may be smaller than the cross-sectional area of the reforming catalyst 330 to prevent leakage of the reforming gas that has not passed through the reforming catalyst 330.

The microchannel reactor 1000 according to the first embodiment of the present invention is basically constructed as described above. The microchannel reactor 1000 having such a configuration has a shape as shown in FIG. 6 through bonding.

As described above, the first reforming through holes to the fourth reforming through holes are disposed at the same positions in the upper and lower portions of the reforming part 300 when they are joined to each other so as to have a tubular shape. Accordingly, the reforming units 300 may be stacked and connected in a continuous manner. The upper shield plate 250 of the upper heat transfer unit 200 disposed on the upper side of the plurality of reforming units 300 and the upper shield plate 250 of the lower heat transfer unit 400 disposed below the plurality of the reforming units 300 The heat transfer gas can be moved only through the heating plate 310 by the lower blocking plate 410 and the reforming gas can be moved only through the reforming catalyst 330 so that the reforming unit 300 can be stacked.

Therefore, even if the heating plate 310 is disposed on the lower side of the gas supply plate 360 or on the upper side of the collecting transfer plate 320, the repetitive lamination of the reforming unit 300 produces the same effect I have.

As another embodiment, in the microchannel reactor 1006 shown in FIG. 8, only the plates 510, 520, 530, and 540 may be disposed between the upper plate 110 and the lower plate 120 to complete the microchannel reactor. In this case, the heat transfer plates 510 and 530 serve as heat transfer and the reforming catalyst plates 520 and 540 serve to modify the raw material gas. Therefore, the reforming plates 520 and 540 must be coated with a catalyst. The plates 510, 520, 530, and 540 have the same configurations as those of the upper heat transfer plates 210 and 230 and the upper reforming plates 220 and 240, respectively.

In the microchannel reactors 1000 and 1006, the display units 2101, 2201, 2301, 2401, 2501, 3101, 3201, 3301, 3401, 3501, 3401, 4101, 4201, 4301, It is possible to distinguish each plate. The display portions 2101, 2201, 2301, 2401, 2501, 3101, 3201, 3301, 3401, 3501, 3601, 4101, 4201, 4301, 4401, 4501 are concave grooves and are formed on the side of the plate. Particularly, it is more preferable since it should be formed on the same side to facilitate identification. The display units 2101, 2201, 2301, 2401, 2501, 3101, 3201, 3301, 3401, 3501, 3401, 4101, 4201, 4301, 4401, 4501 may have different numbers of grooves, Or by varying the interval of the grooves, or the like.

As shown in FIG. 6, after the display units 2101, 2201, 2301, 2401, 2501, 3101, 3201, 3301, 3401, 3501, 3601, 4101, 4201, 4301, 4401, It is possible to confirm that the assembling sequence of the product is correct.

As another example of the display portion 1004, it is also possible to print the display portion 1004 on the outer surface of the side of the plate with a UV printer or the like, or attach it with a stoker or the like as in the case of the microchannel reactor 1002 shown in Fig. 7 . In this case, since it is possible to change the color, it is possible to confirm not only the naked eye identification but also the assembly order automatically by analyzing the image information by taking a picture.

9 is an exploded perspective view of a microchannel heat exchanger 1008 according to an embodiment of the present invention. The microchannel heat exchanger 1008 is substantially the same as the microchannel reactor 1006 of FIG. 8, and has a difference in that two fluids are supplied to move along independent flow paths, and no chemical reaction occurs inside the microchannel heat exchanger 1008.

Accordingly, the microchannel heat exchanger 1008 is disposed between the upper plate 600 and the lower plate 650 by alternately stacking the second gas plates 610 and 630 and the first gas plates 620 and 640. A first gas inlet pipe 603 and a second gas inlet pipe 604 are disposed in the upper plate 600 and a first gas inlet pipe 651 and a second gas inlet pipe 652 . The inflow and outflow of the first gas and the inflow and outflow of the second gas may be arranged in a combination of various positions in the top plate 600 and the bottom plate 650.

The second gas plates 610 and 630 and the first gas plates 620 and 640 have heat transfer channels 615, 625, 635 and 645, respectively, and their moving directions are the same as those of the microchannel reactor 1006 of FIG. Accordingly, the first gas and the second gas heat exchange with each other as they pass through the heat transfer passages 615, 625, 635, and 645.

Further, display portions 6101, 6201, 6301 and 6401 are formed on the gas plates 610, 620, 630 and 640, respectively. Therefore, it is possible to reliably assemble the assembling sequence without error, and the inspection of the microchannel heat exchanger after assembling can be easily performed only by confirming the display portions 6101, 6201, 6301 and 6401.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. It can be understood that

110, 600: upper plate 112, 114: heat transfer gas supply pipe
113: reformed gas discharge pipe 120, 650: lower plate
121: raw material gas supply pipe 122: heat transfer gas discharge pipe
200: upper heat transfer part 210, 230: upper heat transfer plate
211, 221, 231, 241: first upper through hole 212, 222, 232, 242: second upper through hole
213, 223, 233, 243: third upper through holes 214, 224, 234, 244: fourth upper through hole
215, 235: upper heat transfer channel 220, 240: upper reforming plate
225, 455: top reforming channel 250: top blocking plate
300: reforming section 310: heating plate
311, 321, 351, 361: first reforming through holes 312, 322, 352, 362:
313, 323, 353, 363: third modification through holes 314, 324, 354, 364: fourth modification through hole
315: heating channel 320: collecting transfer plate
325: Porous collection hole 326: Connection channel
330: reforming catalyst 340: reforming catalyst presser plate
350: reforming catalyst plate 355: catalyst hole
360: gas supply plate 365: gas supply channel
400: lower heat transfer part 410: lower shield plate
420, 440: Lower heat transfer plate 421, 431, 441, 451:
422, 432, 442, 452: second lower through hole 423, 433, 443, 453:
424, 434, 444, 454: Fourth lower through hole 425, 445: Lower heat transfer channel
430, 450: Lower reforming plate 435, 455: Lower reforming channel
510, 530: heat transfer plate 520, 540: reforming catalyst plate (520, 540)
603: first gas discharge pipe 604: second gas inlet pipe
610, 630: second gas plate 620, 640: first gas plate
615,625,635,645: Heat transfer channel 651: First gas inlet pipe
652: second gas inlet pipe 1000, 1002, 1006: microchannel reactor
2104,
1008: Micro channel heat exchanger

Claims (9)

And at least one thin plate having a display portion formed at an edge thereof and having a micro flow path through which fluid can flow.
And at least one thin plate having a display portion formed at an edge thereof and having a micro flow path through which fluid can flow.
An upper plate having a heat transfer gas supply pipe connected to a heat transfer gas supply source to supply heat transfer gas and a reformed gas discharge pipe for discharging the reformed gas;
A lower plate connected to the source gas supply source to supply a source gas, a lower plate having a heat transfer gas discharge pipe for discharging the heat transfer gas;
And a reforming catalyst plate disposed between the upper plate and the lower plate, the reforming catalyst plate having a heat transfer plate in which a heat transfer gas flow path is formed to heat the source gas to heat the heat transfer gas,
Wherein at least one side of the heat transfer plate and the reforming catalyst plate is provided with a display portion which is observable from the outside.
An upper plate having a heat transfer gas supply pipe connected to a heat transfer gas supply source to supply heat transfer gas and a reformed gas discharge pipe for discharging the reformed gas;
A lower plate connected to the source gas supply source to supply a source gas, a lower plate having a heat transfer gas discharge pipe for discharging the heat transfer gas;
And a reforming unit disposed between the upper plate and the lower plate, the reforming unit reforming the source gas to heat the heat transfer gas,
Wherein the modifying unit comprises:
A gas supply plate having a gas supply channel communicating with only the lower reforming gas passage;
A reforming catalyst plate stacked on the gas supply plate and provided with a reforming catalyst;
A collecting transfer plate stacked on the reforming catalyst plate and transferring the gas reformed by the reforming catalyst to the upper reforming gas passage; And
And a heating plate disposed below the gas supply plate or above the collecting transfer plate and having a heating channel communicating the upper heat transfer gas passage and the lower heat transfer gas passage,
Wherein the gas supply plate, the reforming catalyst plate, the collecting transfer plate, and the heating plate each have a first reforming through hole communicating with the upper reforming gas passage, a second reforming through hole communicating with the upper heat transfer gas passage, A third reforming through hole communicating with the lower reforming gas passage and a fourth reforming through hole communicating with the lower heat transfer gas passage,
Wherein at least one side of the gas supply plate, the reforming catalyst plate, the collecting transfer plate, and the heating plate is provided with a display portion which is observable from the outside.
An upper plate having a heat transfer gas supply pipe connected to a heat transfer gas supply source to supply heat transfer gas and a reformed gas discharge pipe for discharging the reformed gas;
A lower plate connected to the source gas supply source to supply a source gas, a lower plate having a heat transfer gas discharge pipe for discharging the heat transfer gas;
An upper heat transfer gas flow path disposed at a lower portion of the upper plate and connected to the heat transfer gas supply pipe to transfer the heat transfer gas, and an upper reforming gas flow path connected to the upper heat transfer gas flow path, An upper heat transfer part having an upper heat transfer part;
A lower heat transfer gas flow path disposed above the lower plate and connected to the heat transfer gas discharge pipe to transfer the heat transfer gas and a lower reforming gas flow path connected to the raw material gas supply pipe to be in contact with the lower heat transfer gas flow path, A lower heat transfer part; And
And a reforming part in which one or more layers are stacked between the upper heat transfer part and the lower heat transfer part,
The reforming unit may be configured such that at least two reforming units are stacked,
A gas supply plate having a gas supply channel communicating with only the lower reforming gas passage;
A reforming catalyst plate stacked on the gas supply plate and provided with a reforming catalyst;
A collecting transfer plate stacked on the reforming catalyst plate and transferring the gas reformed by the reforming catalyst to the upper reforming gas passage; And
And a heating plate disposed below the gas supply plate or above the collecting transfer plate and having a heating channel communicating the upper heat transfer gas passage and the lower heat transfer gas passage,
Wherein the gas supply plate, the reforming catalyst plate, the collecting transfer plate, and the heating plate each have a first reforming through hole communicating with the upper reforming gas passage, a second reforming through hole communicating with the upper heat transfer gas passage, A third reforming through hole communicating with the lower reforming gas passage and a fourth reforming through hole communicating with the lower heat transfer gas passage,
Wherein at least one side of the gas supply plate, the reforming catalyst plate, the collecting transfer plate, and the heating plate is provided with a display portion which is observable from the outside.
The microchannel reactor according to any one of claims 1 to 5, wherein the display portion is a concave display groove formed of at least one.
The microchannel reactor according to any one of claims 1 to 5, wherein the display portion is a display print attached or printed on the side portion.
The microchannel reactor according to any one of claims 3 to 5, wherein the display unit is formed on the same side of the gas supply plate, the reforming catalyst plate, the collecting transfer plate, and the heating plate.
The microchannel reactor according to any one of claims 1 to 5, wherein the display unit is formed of at least one convex mark.
KR1020140056432A 2014-05-12 2014-05-12 Micro channel reactor and micro channel heat exchanger with indicator KR20150129901A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017099270A1 (en) * 2015-12-09 2017-06-15 한국에너지기술연구원 Thermoelectric generator using microchannel reactor
CN106969545A (en) * 2017-05-22 2017-07-21 珠海格力电器股份有限公司 Microchannel heat exchanger and heat pump water heater

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017099270A1 (en) * 2015-12-09 2017-06-15 한국에너지기술연구원 Thermoelectric generator using microchannel reactor
CN106969545A (en) * 2017-05-22 2017-07-21 珠海格力电器股份有限公司 Microchannel heat exchanger and heat pump water heater

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