KR20150125838A - Single Mode High Power Laser using an External Resonator - Google Patents

Single Mode High Power Laser using an External Resonator Download PDF

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Publication number
KR20150125838A
KR20150125838A KR1020140052700A KR20140052700A KR20150125838A KR 20150125838 A KR20150125838 A KR 20150125838A KR 1020140052700 A KR1020140052700 A KR 1020140052700A KR 20140052700 A KR20140052700 A KR 20140052700A KR 20150125838 A KR20150125838 A KR 20150125838A
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KR
South Korea
Prior art keywords
external resonator
wavelength
laser
mode
diode
Prior art date
Application number
KR1020140052700A
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Korean (ko)
Inventor
송홍주
이준호
박지연
Original Assignee
전자부품연구원
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Priority to KR1020140052700A priority Critical patent/KR20150125838A/en
Publication of KR20150125838A publication Critical patent/KR20150125838A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/08004—Construction or shape of optical resonators or components thereof incorporating a dispersive element, e.g. a prism for wavelength selection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/08059—Constructional details of the reflector, e.g. shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
    • H01S3/09415—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

Provided is an external resonator diode laser using external reflection mirror adjustment. An external resonator diode laser according to an embodiment of the present inventor secures a single vertical mode by a light feedback path consisting of a laser diode, a reflection mirror, and a wavelength selection filter, and secures a single horizontal mode by the reflection mode. Thus, the single mode [single vertical mode (single wavelength), a single horizontal mode] can be outputted by the external resonator diode laser.

Description

[0001] The present invention relates to a single mode high power laser using an external resonator,

The present invention relates to an external resonator diode laser, and more particularly, to an external resonator diode laser having a single mode and capable of high output at the same time.

A single transverse / longitudinal mode laser is used as a very useful light source in optical devices such as optical communication, imaging devices, optical sensors, and spectroscopic systems

In order to produce a single-mode laser or a single-wavelength laser, a special laser shape is required. Basically, only a single wavelength must satisfy the optical feedback condition that may exist in the laser resonator. These types can be classified into semiconductor diodes such as DFB, DBR and VCSEL in a single element type, fiber laser based on a fiber Bragg grating, reflection mirrors on the outside of a laser diode (LD) or optical gain medium And an external resonator diode laser that forms a resonator by forming the resonator.

There are various differences in characteristics such as light output, line width, size, and price depending on the type. In the case of an external resonator diode laser, a single wavelength is available, but high output can be secured compared with other technologies.

1 is a configuration diagram of an external resonator diode laser. The configuration of the external resonator diode laser is possible by additionally placing a reflection mirror or an output coupling mirror outside the semiconductor laser diode and performing optical feedback.

1 (b) is an explanatory view showing the principle of an external resonator diode laser. First, even if a multi-mode (multi-wavelength) mode occurs in a semiconductor laser diode, only a specific wavelength is selected from the outside and then re- ), So that the energy is compressed only for a specific wavelength selected, and a single wavelength and a high output power are possible.

The main factors for evaluating the characteristics of the laser light source are optical power of the laser, optical mode (transverse mode, longitudinal mode), and the like. The prior art has a problem in that it has a single optical mode but has a limitation of light output.

SUMMARY OF THE INVENTION It is an object of the present invention to provide an external resonator diode laser having a single mode (single wavelength mode, single transverse mode) and capable of high output at the same time have.

According to an aspect of the present invention, there is provided an external resonator diode laser including a laser diode, a reflective mirror, and a wavelength selection filter. The external resonator diode laser includes an optical feedback path formed by a laser diode, a reflective mirror, Securing a single longitudinal mode and securing a single transverse mode by means of a reflective mirror.

The reflecting mirror can be arranged so as to be inclined to the emission optical axis of the laser diode.

The reflecting mirror may be a concave or a flat type, and the wavelength selecting filter may be a concave or a flat type.

The reflection mirror may be a total reflection mirror or a partial reflection mirror, and the wavelength selection filter may be a thin film type or a diffraction grating type.

Meanwhile, according to another embodiment of the present invention, an external resonator diode laser including a laser diode, a wavelength selection filter, and a reflection mirror is formed by an optical feedback path formed of 'laser diode? Wavelength selection filter? Reflection mirror' And a single transverse mode is ensured by the reflecting mirror.

The wavelength selection filter can be arranged in a state inclined to the emission optical axis of the laser diode.

According to another embodiment of the present invention, the external resonator diode laser may further include a wavelength tunable material provided between the wavelength selection filter and the reflection mirror, the tunable wavelength material being variable in incident wavelength.

As described above, according to the embodiments of the present invention, it is possible to realize a single mode (single wavelength mode, single transverse mode) with high output power through an external resonator diode laser.

FIG. 1 is a configuration diagram of a conventional external resonator diode laser,
FIGS. 2 to 6 are schematic views of external resonator diode lasers according to an embodiment of the present invention,
FIGS. 7 to 11 are schematic views of an external resonator diode laser according to another embodiment of the present invention,
FIGS. 12 and 13 are diagrams of an external resonator diode laser according to another embodiment of the present invention.

Hereinafter, the present invention will be described in detail with reference to the drawings.

2 is a diagram illustrating an external resonator diode laser according to an embodiment of the present invention. The external resonator diode laser according to the present embodiment secures a single mode while maintaining high output for the high output multimode emitted from the semiconductor laser diode 100 by using an external reflection mirror (output coupling mirror).

The external resonator diode laser according to the embodiment of the present invention includes a semiconductor laser diode 100, a lens 210, a concave reflection mirror 220 and a concave wavelength selection filter 230 as shown in FIG. 2 .

The semiconductor laser diode 100 emits a laser of a high output multimode. The lens 210 may be implemented as a collimating lens, but is not limited thereto. The concave reflection mirror 220 is arranged in an inclined state, not perpendicular to the outgoing light axis of the semiconductor laser diode 100. The concave wavelength selection filter 230 does not depend on the diffraction grating type filter or the thin film type filter.

Only a specific wavelength selected by the optical feedback path formed of "semiconductor laser diode (100)? Lens 210? Concave reflection mirror 220? Concave wavelength selection filter 230" is reinforced while being subjected to optical feedback process, Single mode is ensured. At the same time, the concave reflection mirror 220 secures a high output single transverse mode.

3 is a diagram illustrating an external resonator diode laser according to an embodiment of the present invention. The external resonator diode laser shown in Fig. 3 is characterized in that the concave wavelength selection filter 230 is replaced with a flat type wavelength selection filter 235 in the external resonator diode laser shown in Fig. The flat type wavelength selection filter 235 is also a diffraction grating type filter or a thin film type filter.

4 is a diagram illustrating an external resonator diode laser according to an embodiment of the present invention. The external resonator diode laser according to the present embodiment includes a semiconductor laser diode 100, a lens 210, a concave reflection mirror 220 and a flat type wavelength selection filter 235 as shown in FIG.

In FIG. 4, the flat type wavelength selection filter 235 is arranged in an inclined state, not perpendicular to the outgoing light axis of the semiconductor laser diode 100.

By the optical feedback path formed of "semiconductor laser diode (100)? Lens 210? Flat type wavelength selection filter 235? Concave reflection mirror 220 ", only a specific wavelength selected is reinforced A high power single mode is secured. At the same time, the concave reflection mirror 220 secures a high output single transverse mode.

5 is a diagram illustrating an external resonator diode laser according to an embodiment of the present invention. The external resonator diode laser shown in Fig. 5 is characterized in that the concave reflection mirror 220 is replaced with a flat reflection mirror 225 in the external resonator diode laser shown in Fig.

6 is a diagram illustrating an external resonator diode laser according to an embodiment of the present invention. The external resonator diode laser shown in Fig. 6 is characterized in that the inclined direction of the flat type wavelength selection filter 235 is reversed to that of Fig. Thus, FIG. 5 is vertical, while FIG. 6 is horizontal.

7 is a diagram illustrating an external resonator diode laser according to another embodiment of the present invention. The external resonator diode laser according to the present embodiment includes a semiconductor laser diode 100, a lens 210, a partial reflection mirror 223 and a flat type wavelength selection filter 235 as shown in Fig.

Only the specific wavelength selected by the optical feedback path formed by the "flat type wavelength selection filter 235? Lens 210? Semiconductor laser diode 100? Partial reflection mirror 223" A high power single mode is secured. At the same time, a high output single transverse mode is ensured by the partial reflection mirror 223.

8 is a view illustrating an external resonator diode laser according to another embodiment of the present invention. The external resonator diode laser shown in Fig. 8 is characterized in that the flat type wavelength selection filter 235 and the lens 210 are replaced with a concave wavelength selection filter 230 in the external resonator diode laser shown in Fig. 7 have.

9 is a diagram illustrating an external resonator diode laser according to another embodiment of the present invention. The external resonator diode laser shown in Fig. 9 is characterized in that, in the external resonator diode laser shown in Fig. 7, the partial reflection mirror 223 is replaced by the concave wavelength selection filter 230. [

10 is a view illustrating an external resonator diode laser according to another embodiment of the present invention. The external resonator diode laser shown in Fig. 10 is characterized in that the partial reflection mirror 223 in the external resonator diode laser shown in Fig. 7 is replaced by the lens 210-2 and the flat type wavelength selection filter 235 .

11 is a view illustrating an external resonator diode laser according to another embodiment of the present invention. The external resonator diode laser shown in Fig. 11 is characterized in that, in the external resonator diode laser shown in Fig. 8, the partial reflection mirror 223 is replaced by the concave wavelength selection filter 230. Fig.

12 is a diagram illustrating an external resonator diode laser according to another embodiment of the present invention. 12, the external resonator diode laser according to the present embodiment includes a semiconductor laser diode 100, a lens 210, a flat type wavelength selection filter 235, a wavelength tunable material 300, and a wavelength selection mirror (227).

The wavelength selecting mirror 227 is a mirror that selectively reflects a specific wavelength (for example, 1064 nm), and the wavelength tunable material 300 is a material that emits a variable wavelength (for example, 1064 nm to 532 nm) .

Only a specific wavelength selected by the optical feedback path formed of "semiconductor laser diode (100)? Lens 210? Flat type wavelength selection filter 235? Wavelength selection mirror 227" A high power single mode is secured. At the same time, a high output single transverse mode is ensured by the wavelength selection mirror 227.

13 is a diagram illustrating an external resonator diode laser according to another embodiment of the present invention. The external resonator diode laser shown in FIG. 13 is characterized in that, in the external resonator diode laser shown in FIG. 12, the direction of the wavelength tunable material 300 is changed instead of the flat type wavelength selection filter 235 being omitted.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the present invention.

100: semiconductor laser diode 210: lens
220: concave reflecting mirror 223: partial reflecting mirror
225: flat type reflection mirror 227: wavelength selection mirror
230: concave wavelength selection filter 235: flat type wavelength selection filter
300: wavelength tunable material

Claims (7)

An external resonator diode laser comprising a laser diode, a reflective mirror and a wavelength selective filter,
A single mode is secured by the optical feedback path formed by 'laser diode ↔ reflection mirror ↔ wavelength selection filter'
And a single transverse mode is ensured by the reflective mirror.
The method according to claim 1,
The reflective mirror,
And is arranged so as to be inclined with respect to an emission optical axis of the laser diode.
The method according to claim 1,
The reflecting mirror is concave or flat,
Wherein the wavelength selection filter is a concave or a flat type.
The method of claim 3,
The reflective mirror is a total reflection mirror or a partial reflection mirror,
An external resonator diode laser characterized in that the wavelength selection filter is of a thin film type or a diffraction grating type.
An external resonator diode laser comprising a laser diode, a wavelength selective filter and a reflective mirror,
The single-mode mode is secured by the optical feedback path formed by 'laser diode ↔ wavelength selection filter ↔ reflection mirror'
And a single transverse mode is ensured by the reflective mirror.
6. The method of claim 5,
The wavelength-
And is arranged so as to be inclined with respect to an emission optical axis of the laser diode.
6. The method of claim 5,
And a wavelength tunable material provided between the wavelength selection filter and the reflection mirror and outputting a variable wavelength of the incident light.
KR1020140052700A 2014-04-30 2014-04-30 Single Mode High Power Laser using an External Resonator KR20150125838A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102271640B1 (en) * 2020-08-28 2021-07-01 국방과학연구소 Optical fiber laser assembly
KR20230103787A (en) * 2021-12-30 2023-07-07 탈렌티스 주식회사 Wavelength selective laser system using MEMS mirror array

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102271640B1 (en) * 2020-08-28 2021-07-01 국방과학연구소 Optical fiber laser assembly
KR20230103787A (en) * 2021-12-30 2023-07-07 탈렌티스 주식회사 Wavelength selective laser system using MEMS mirror array

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