KR20150124441A - Manufacturing method and system of metal nitride film for decorative high hardened coating - Google Patents

Manufacturing method and system of metal nitride film for decorative high hardened coating Download PDF

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KR20150124441A
KR20150124441A KR1020150149867A KR20150149867A KR20150124441A KR 20150124441 A KR20150124441 A KR 20150124441A KR 1020150149867 A KR1020150149867 A KR 1020150149867A KR 20150149867 A KR20150149867 A KR 20150149867A KR 20150124441 A KR20150124441 A KR 20150124441A
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metal nitride
sputtering
ion gun
vacuum chamber
coating film
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Korean (ko)
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영하 전
여기호
홍정기
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(주)제이 앤 엘 테크
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C23C14/3442—Applying energy to the substrate during sputtering using an ion beam
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3471—Introduction of auxiliary energy into the plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering

Abstract

The present invention relates to formation of a metal nitride coating film, efficiently forming a metal nitride coating film and achieving excellent film properties by double discharge of sputtering and an ion gun by sputtering of a metal element and simultaneous injection of argon and nitrogen into the ion gun. According to the present invention, the manufacturing method and system for a high hardness decorative metal nitride coating layer for exterior are suitable for mass production by achieving a high yield while executing a low temperature process due to the double discharge properties when compared with a metal nitride film formed by existing sputtering and are suitable for an exterior coating material of a mobile device, a camera, or the like by showing the morphology of the coating film with high hardness and excellent decorative properties.

Description

외장재 용 고경도 장식성 금속질화물 코팅층의 제조방법 및 제조장치{MANUFACTURING METHOD AND SYSTEM OF METAL NITRIDE FILM FOR DECORATIVE HIGH HARDENED COATING}TECHNICAL FIELD [0001] The present invention relates to a method for manufacturing a high hardness ornamental metal nitride coating layer for exterior materials,

본 발명은 고경도를 나타내며 내식성이 있는 금속질화물 코팅층을 외장재 용 코팅, 특히 장식용 코팅으로 활용하기 위한 금속질화물 코팅막 제조방법 및 그 제조장치에 관한 것이다. The present invention relates to a method for manufacturing a metal nitride coating film for use as a coating for exterior materials, in particular, a decorative coating, which exhibits a high hardness and is resistant to corrosion, and an apparatus for manufacturing the same.

금속질화물 코팅층은 경도가 높아 내구성이 있으며 내식성 및 고온 내산화성도 좋아 주로 자동차 부품, 항공기 부품, 가공 기계 코팅 등에 널리 적용되며, 예로서 CrN, TiN, TiAlN, TiCN 등을 들 수 있다. 이러한 금속질화물 코팅층은 고경도 내마모성으로 막질을 치밀하게 그리고 조도를 매끈하게 제어할 경우 외장재 용 장식성 코팅으로 활용될 수 있다. 특히, 금빛과 은빛이 감도는 TiN, ZrN, CrN은 장식성이 우수하여 여러 가지 물품에 코팅될 수 있다. The metal nitride coating layer is highly durable due to its high hardness and is widely used for automobile parts, aircraft parts, processing machine coatings, and the like, for example, CrN, TiN, TiAlN, and TiCN. Such a metal nitride coating layer can be utilized as a decorative coating for exterior materials when the film quality is controlled finely and smoothly with high hardness abrasion resistance. In particular, TiN, ZrN, and CrN, which are sensitive to gold and silvery, are excellent in decorability and can be coated on various articles.

종래, 이와 같은 금속질화물 코팅층은 금속타깃을 챔버에 장착하고, 챔버를 진공화한 다음, 질소와 아르곤을 챔버에 불어넣고 고 전압을 걸어 플라즈마 방전을 일으켜 금속타깃을 스퍼터링 하여 제작되었다. 다층박막 중 CrN을 UBM(UnBalanced Magnetron-Sputtering)으로 제작하는 경우는 대한민국 등록특허제10-0660479등에 나타나있다. 이러한 스퍼터링에 의한 금속질화물 박막 제작 기술은 주로 산업용 고강도 기계 부품을 코팅 대상으로 하고 있어, 경도 특성 등에 치우치며 상대적으로 장식성을 좌우하는 모폴로지는 그다지 고려되지 않고 있다. Conventionally, such a metal nitride coating layer is manufactured by attaching a metal target to a chamber, evacuating the chamber, blowing nitrogen and argon into the chamber, and applying a high voltage to generate a plasma discharge to sputter the metal target. The case where CrN among the multilayer thin films is produced by UBM (Unbalanced Magnetron-Sputtering) is disclosed in Korean Patent No. 10-0660479. Such metal nitride thin film fabrication technology by sputtering is mainly applied to industrial high-strength mechanical parts, so that the morphology that affects the hardness characteristics and relatively ornamentality is not considered much.

따라서 본 발명의 목적은 휴대전화 본체와 같이 장식성이 중요시되는 경우에 적용될 수 있는 금속질화물 코팅층 제조 방법과 그 제조장치를 제공하고자 하는 것이다. Accordingly, it is an object of the present invention to provide a method for manufacturing a metal nitride coating layer and a manufacturing apparatus thereof, which can be applied to a case where a decorative property is important, such as a cellular phone main body.

상기 목적에 따라 본 발명은, 휴대폰이나 카메라 외장재에 사용되는 알루미늄 또는 마그네슘 등의 융점이 낮은 소재에 고기능성 및 장식성을 가지는 금속질화물 코팅층을 증착하였고, 이를 위하여 130℃ 정도의 온도를 유지하는 진공 챔버 안에서 종래의 UBM(Un-Balanced Magnetron) 스퍼터링 장치와 LIS(Linear Ion Gun) 플라즈마 발생 장치를 동시에 채용하여 여기에 질소를 흘려주어 동시방전을 발생시킴에 따라 플라즈마 방전 효율을 높이고 이온화된 질소 양이온과 금속타깃 표면에서 발생하는 금속 이온들과의 합성능력을 높여 고기능성 및 장식성을 가진 금속질화물 코팅층을 합성하는 기술을 제공한다. According to the present invention, a metal nitride coating layer having high functionality and decorative property is deposited on a material having a low melting point, such as aluminum or magnesium, used for a mobile phone or a camera exterior material, and a vacuum chamber (Unbalanced Magnetron) sputtering apparatus and a LIS (Linear Ion Gun) plasma generating apparatus are simultaneously employed in the apparatus, nitrogen is supplied to generate simultaneous discharge, thereby increasing the plasma discharge efficiency and increasing the ionized nitrogen cation and metal The present invention provides a technique for synthesizing a metal nitride coating layer having high functionality and ornamental properties by increasing the ability of the metal nitride to synthesize with metal ions generated on a target surface.

또한 LIS(Linear Ion Gun) 플라즈마 발생장치를 이용하여, 코팅층 증착 전 진공챔버 안에서 비활성기체인 Ar 가스를 이용하여 피코팅재 표면의 불순물 및 산화막을 제거하고 표면활성화 상태를 만들어 주어 피코팅재와 코팅막 계면에 대한 접합 내구성을 높여주는 전처리 기술을 추가하였다.In addition, impurity and oxide film on the surface of the coating material are removed by using an inert gas, Ar gas, in the vacuum chamber before the coating layer deposition using a LIS (Linear Ion Gun) plasma generator, And a pretreatment technique to increase the durability of the joints.

또한 LIS(Linear Ion Gun) 플라즈마 발생장치는 버퍼층 및 최종 기능층 코팅 공정 시 비활성 기체인 Ar 가스를 이용한 어시스트(Assist) 공정을 통하여 스퍼터링에 의해 발생하는 미세파티클(Micro-particle)을 제거하여 피코팅재의 조도 및 모폴로지를 향상시킴에 따라 휴대폰 및 카메라 케이스 등과 같은 장식성을 가지는 외장재의 외관특성을 향상시킨다.In addition, the LIS (Linear Ion Gun) plasma generating apparatus removes micro-particles generated by sputtering through an assist process using a buffer layer and Ar gas, which is an inert gas during the final functional layer coating process, And improves the appearance characteristics of the decorative material having a decorative property such as a cellular phone and a camera case by improving the illuminance and the morphology of the exterior material.

즉, 본 발명은, 금속질화물 코팅 막을 형성함에 있어서, 챔버 안에 금속 타깃을 배치하고 아르곤과 같은 비활성 가스를 공급하고 전류를 인가하여 플라즈마 방전을 일으켜 스퍼터링으로 금속 타깃을 침식하고, 이온건에는 비활성기체인 아르곤과 반응성 가스인 질소를 동시에 공급하여 상기 금속 타깃으로부터 스퍼터링된 금속 입자를 활성화 된 질소 원자와 반응시켜 모재에 금속질화물을 코팅하는 것을 특징으로 하는 금속질화물 코팅막 제조방법을 제공한다. That is, in forming a metal nitride coating film, a metal target is disposed in a chamber, an inert gas such as argon is supplied, a current is applied to cause a plasma discharge to erode the metal target by sputtering, And a metal nitride is coated on the base material by reacting the metal particles sputtered from the metal target with the activated nitrogen atoms by supplying argon and nitrogen as a reactive gas at the same time.

또한, 본 발명은, 상기 방법을 실시하기 위해, Further, the present invention is characterized in that, in order to carry out the above method,

챔버;chamber;

상기 챔버 안에 장착되는 금속 타깃;A metal target mounted in the chamber;

상기 챔버 안으로 질소를 불어넣되, 이온화 에너지를 부여하여 질소를 활성화시키는 이온 건; An ion gun blowing nitrogen into the chamber, the ion gun providing ionization energy to activate nitrogen;

상기 챔버 안에 상기 금속 타깃을 스퍼터링 되게 할 플라즈마를 방전장치와 이온건에 알곤 및 질소 이온 주입을 위한 플라즈마 방전장치용 비활성 및 반응성 가스 공급기;및An inert and reactive gas supply for the plasma discharge device for argon and nitrogen ion implantation into a discharge device and an ion gun to cause the plasma target to be sputtered in the chamber;

전원장치;를 포함하는 것을 특징으로 하는 금속질화물 코팅막 제조장치를 제공한다.
And a power supply device for supplying the metal nitride layer to the metal nitride layer.

본 발명에 따르면 기존의 스퍼터링 단독에 의한 금속질화물 코팅막에 비해 스퍼터링 장치와 이온 건 장치를 모두 구비함으로써 이온 건을 통해 공급된 질소의 해리도가 높아 전체적으로 플라즈마 방전 효율을 높여 막질이 우수한 금속질화물 코팅막이 형성되며, 제조시 높은 수율과 더불어 코팅막의 고경도 특성과 장식성이우수한 모폴로지를 나타낸다. According to the present invention, since the sputtering apparatus and the ion gun apparatus are both provided as compared with the conventional metal nitride coating film by sputtering alone, the dissociation degree of nitrogen supplied through the ion gun is high, thereby enhancing the plasma discharge efficiency as a whole and forming a metal nitride coating film having excellent film quality And exhibits excellent morphology with high yield and high hardness property and decorative property of coating film.

특히, 모재에 대한 전처리 공정은 피코팅재와 코팅막 계면에 대한 접합 내구성을 높여 코팅층의 수명을 길게 하며, 이온 건을 통해 흘려준 비활성 가스(Ar 등)는 스퍼터링에 의한 미세파티클을 제거하여 모폴로지를 향상시킨다. Particularly, the pre-treatment process for the base material increases the durability of the bond to the interface between the coating material and the coating film to prolong the life of the coating layer, and the inert gas (Ar, etc.) flowing through the ion gun removes fine particles by sputtering to improve the morphology .

도 1은 본 발명의 스퍼터링과 이온 건을 구비한 하이브리드 방식의 금속질화막 코팅장치의 개략적인 구성을 나타내는 개요도이다.
도 2는 본 발명의 하이브리드 코팅장치에 의해 제조된 CrN 코팅막의 잔류응력과 경도를 나타낸 그래프들이다.
도 3은 본 발명의 하이브리드 코팅장치에 의해 제조된 CrN 코팅막의 XRD을 통한 조성 분석을 나타내는 그래프이다.
도 4는 본 발명의 이온건을 적용한 하이브리드 코팅장치에 의해 제조된 CrN 코팅막의 모폴로지(오른쪽)를 기존의 이온건을 사용하지 않는 스퍼터링에 의해 제조된 CrN 코팅막의 모폴로지(왼쪽)와 함께 도시한 사진이다. 1 is a schematic diagram showing a schematic configuration of a hybrid type metal nitride film coating apparatus having sputtering and ion gun of the present invention.
2 is a graph showing the residual stress and hardness of the CrN coating film produced by the hybrid coating apparatus of the present invention.
3 is a graph showing XRD compositional analysis of the CrN coating film prepared by the hybrid coating apparatus of the present invention.
FIG. 4 is a photograph showing the morphology (right side) of the CrN coating film produced by the hybrid coating apparatus using the ion gun of the present invention together with the morphology (left side) of the CrN coating film prepared by sputtering without using the ion gun to be.

이하, 본 발명의 바람직한 실시예에 대해 첨부도면을 참조하여 상세히 설명한다.Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

도 1과 같이 진공 챔버(100)에 이온 건(200)을 장착하고 챔버(100) 내부에 금속 타깃(300)을 고정할 타깃 홀더를 설치한다. 시편으로 사용되는 모재(미 도시)는 타깃(300) 챔버(100) 센터에 있는 턴테이블 외곽에 고정되면서 공자전을 통하여 3차원 형상의 제품에 균일한 코팅막을 형성할 수 있도록 한다. 코팅 전에 먼저 아르곤 가스를 이온 건(200)을 통해 공급하거나 별도의 가스공급기를 통해 공급하여 이온 건식 세정 및 식각 처리한다. 1, an ion gun 200 is mounted on a vacuum chamber 100 and a target holder is mounted on the chamber 100 to fix a metal target 300 thereon. The base material (not shown) used as a specimen is fixed to the outer periphery of the turntable at the center of the target 300 chamber 100, thereby enabling a uniform coating film to be formed on the three-dimensional product through confinement. The argon gas is first supplied through the ion gun 200 or supplied through a separate gas feeder, and subjected to ion dry cleaning and etching.

다음, 금속 타깃(300)을 타깃 홀더에 장착하고 Ar과 같은 비활성 가스를 공급하고, 또한 아르곤과 질소를 동시에 이온 건(200)을 거쳐 공급한다. 플라즈마 방전을 일으켜 금속 타깃을 스퍼터링 하게 되는 Ar과 같은 비활성 가스는 질소와 함께 이온 건(200)을 통해 챔버 내로 공급될 수도 있고, 별도의 가스 공급기를 통해 공급될 수도 있다. Next, the metal target 300 is mounted on the target holder, an inert gas such as Ar is supplied, and argon and nitrogen are supplied through the ion gun 200 at the same time. An inert gas such as Ar, which causes plasma discharge to sputter a metal target, may be supplied into the chamber through the ion gun 200 together with nitrogen, or may be supplied through a separate gas supplier.

스퍼터링에 필요한 전원은 D.C 방식으로 할 수 있으며, 본 발명에서는 이온 건을 사용한 방식(본 실시예)과 대비하여 종래와 같이 이온 건을 사용하지 않는 스퍼터링 방식(비교예)을 각각 적용하여 CrN 코팅막을 제조 및 합성하고 그 잔류응력과 경도를 측정하여, 도 2에 그래프로 나타내었다. 기존 방식으로서 이온건을 사용하지 않는 스퍼터링 방식으로 합성하는 CrN 코팅막 경도에 비해 이온건과 D.C 스퍼터링이 함께 사용되어 합성된 CrN 코팅막 경도가 매우 높게 나타났다. 이는 스퍼터링의 경우, 질소 가스 분위기 중에서 플라즈마 방전을 일으켜 금속타깃을 침식하여 금속질화물 코팅막을 만들기 때문에 상대적으로 질소원자로 해리되는 비율이 높지 않고 해리된 질소 원자 에너지 수준도 낮은 데 비해, 질소를 이온 건을 통해 주입하면, 질소 원자는 질소 이온화되어 높은 활성을 나타내 스퍼터링을 통해 침식되어 나오는 금속원자에 대해 반응성이 좋아 금속질화물을 높은 효율로 형성할 수 있기 때문이다. 이러한 질소 이온 주입에 의해 형성되는 금속질화물 코팅 막은 치밀한 주상 구조를 가짐에 따라 막질의 외관 또한 우수하다. The power required for the sputtering can be DC method. In contrast to the method using the ion gun (the present embodiment) in the present invention, the CrN coating layer is formed by applying the sputtering method (comparative example) And their residual stresses and hardnesses were measured and shown graphically in Fig. The hardness of CrN coating film synthesized by using ion gun and D.C sputtering was very high compared to the hardness of CrN coating film synthesized by sputtering method which does not use ion gun in the conventional method. In the case of sputtering, a plasma discharge is generated in a nitrogen gas atmosphere to erode a metal target to form a metal nitride coating film. Therefore, the dissociation rate of nitrogen atoms is relatively low and the dissociated nitrogen atom energy level is low. , Nitrogen atoms are nitrogen ionized to exhibit high activity and are reactive with metal atoms that are eroded through sputtering, so that metal nitride can be formed with high efficiency. Since the metal nitride coating film formed by such nitrogen ion implantation has a dense columnar structure, the appearance of the film quality is also excellent.

본 실시예를 통해 구성된, DC 스퍼터링과 이온 건을 조합시킨 하이브리드 방식의 금속질화물 코팅 막 제조시스템에 따르면, CrN 코팅막의 경우, 증착율이 0.6 내지 0.8 μm/hr로 성막 속도가 빠른 편으로 양산에 적합하며, 공정 온도가 100 내지 130 ℃로 매우 낮아 다양한 소재를 모재로 할 수 있는 장점을 지닌다. According to the hybrid metal nitride coating film production system in which the DC sputtering and the ion gun are combined in the present embodiment, CrN coating films have a deposition rate of 0.6 to 0.8 μm / hr and are suitable for mass production And the process temperature is as low as 100 to 130 ° C, which is advantageous in that various materials can be used as a base material.

본 실시예의 CrN 코팅막 제조 공정에서, DC 스퍼터링의 인가 전력은 2 kW 정도, 인가전압은 300 내지 400V 였고, 이온 건은 1 내지 2 kV 전압 및 0.1 내지 0.5A 전류가 인가되었다. 이와 같은 이중방전에 의해 제조된 CrN 코팅막의 응력은 2.21GPa, 경도는 24.16GPa로 상당히 우수하였다. In the CrN coating film manufacturing process of the present embodiment, the applied electric power of DC sputtering was about 2 kW, the applied voltage was 300 to 400 V, and the ion gun was applied with a voltage of 1 to 2 kV and a current of 0.1 to 0.5 A. The CrN coating film produced by such a double discharge had a stress of 2.21 GPa and a hardness of 24.16 GPa.

도 3에는 본 실시예에서 제작된 CrN 코팅막을 XRD으로 분석한 결과 그래프이며, 피크들로부터 코팅막의 조성은 큐빅(cubic) 구조의 CrN과 헥사고널(hexagonal) 구조의 Cr2N의 혼성 구조임을 알 수 있었다.
FIG. 3 is a graph showing the results of XRD analysis of the CrN coating film prepared in this example. From the peaks, it is known that the composition of the coating film is a mixed structure of CrN with a cubic structure and Cr 2 N with a hexagonal structure I could.

*도 4는 본 실시예에서 제작된 CrN 코팅막(오른편)과 기존의 스퍼터링에 의해 제작된 CrN 코팅막(왼편)에 대해 광학현미경을 통해 관찰한 모폴로지를 보여준다. 기존 방식에 의한 CrN 코팅막의 경우, 드랍릿(droplet)이 매우 많아 후처리 공정을 실시하여야 장식재로서 가치를 지니게 되지만, 본 발명에 의한 CrN 코팅막은 이러한 드랍릿이 거의 없어 후처리 공정을 요하지 않고도 훌륭한 모폴로지를 나타낸다. 4 shows the morphology observed through the optical microscope on the CrN coating film (right side) fabricated in this embodiment and the CrN coating film (left side) fabricated by the conventional sputtering. In the case of the CrN coating film according to the conventional method, since the droplet is very large, it is necessary to carry out a post-treatment process to have a value as a decorative material. However, since the CrN coating film according to the present invention has such a small droplet, Represents a morphology.

이와 같이 고 경도이면서 모폴로지가 뛰어난 CrN 코팅막은 휴대전화 몸체 등에 적용될 수 있으며, 특히 이중방전에 의한 공정으로 저온 공정이 가능하므로 모재 선택의 폭이 넓다는 장점도 지닌다. Such a CrN coating film having high hardness and excellent morphology can be applied to a cell phone body, and in particular, since it can be processed at low temperatures by a double discharge process, it has a wide selection of base materials.

본 실시 예에서는 CrN 코팅막에 대해서만 설명하였으나, 금속 타깃을 Ti, Al, Zr 등으로 하고 이온 건으로 주입되는 가스를 질소외에 탄소나 탄화수소, 실란가스 등으로 하면, TiN, CrN, ZrN TiCN, TiAlN, TiZrN AlTiN, AlTiZrN AlCrN, AlSiCrN 등의 코팅막을 제작할 수 있다.
In the present embodiment, only the CrN coating film is described. However, if the metal target is made of Ti, Al, Zr or the like and the gas injected into the ion gun is carbon, hydrocarbon, silane gas or the like in addition to nitrogen, TiN, CrN, ZrN TiCN, TiAlN, TiZrN A coating film of AlTiN, AlTiZrN AlCrN, AlSiCrN or the like can be produced.

본 발명의 권리는 위에서 설명된 실시예에 한정되지 않고 청구범위에 기재된 바에 의해 정의되며, 본 발명의 분야에서 통상의 지식을 가진 자가 청구범위에 기재된 권리범위 내에서 다양한 변형과 제작을 할 수 있다는 것은 자명하다.It is to be understood that the present invention is not limited to the above-described embodiment, but is defined by the scope of the claims, and those skilled in the art can make various changes and modifications within the scope of the claims It is self-evident.

100: 챔버
200: 이온 건
300: 타깃100: chamber
200: ion gun
300: Target

Claims (2)

진공 챔버;
상기 진공 챔버에 장착되는 이온 건; 및
상기 진공 챔버 내부에 고정되는 금속 타깃;을 포함하고,
비활성 가스와 질소를 동시에 이온 건을 통해 공급하여 플라즈마 방전을 일으켜 상기 금속 타깃을 스퍼터링 하게 하고,
코팅되는 모재는 진공 챔버 센터에 있는 턴테이블에 고정되어 공자전 되며,
상기 스퍼터링은 UBM(Un-Balanced Magnetron) 스퍼터링 방식이며,
진공 챔버 내 온도는 100 내지 130℃로 유지되어,
형성되는 크롬질화물 코팅층은 큐빅(cubic) 구조의 CrN과 헥사고널(hexagonal) 구조의 Cr2N의 혼성 구조를 포함하는 외장용 장식재 코팅막인 것을 특징으로 하는 외장용 장식재 코팅막 제조장치.A vacuum chamber;
An ion gun mounted in the vacuum chamber; And
And a metal target fixed inside the vacuum chamber,
An inert gas and nitrogen are simultaneously supplied through an ion gun to cause a plasma discharge to sputter the metal target,
The coated base material is fixed to the turntable in the vacuum chamber center,
The sputtering is a UBM (Un-Balanced Magnetron) sputtering method,
The temperature in the vacuum chamber is maintained at 100-130 < 0 > C,
Wherein the chromium nitride coating layer to be formed is an exterior decorative coating layer including a hybrid structure of CrN with a cubic structure and Cr 2 N with a hexagonal structure. 제1항에 있어서, 상기 진공챔버에 가스를 공급하는 별도의 가스공급기를 더 포함하고,
스퍼터링 실시 및 질소원자 활성화에 의한 CrN 코팅 실시 전에 먼저 아르곤 가스를 상기 선형 이온 건 플라즈마 발생장치를 통해 챔버 내에 공급하거나 상기된 별도의 가스공급기를 통해 진공챔버 내에 공급하여 모재 표면을 이온 건식 세정하고 활성화하는 것을 특징으로 하는 외장용 장식재 코팅막 제조장치.
























2. The apparatus of claim 1, further comprising a separate gas supplier for supplying gas to the vacuum chamber,
Argon gas is first supplied into the chamber through the linear ion gun plasma generator or is supplied into the vacuum chamber through the separate gas supply unit before performing the sputtering and the CrN coating by nitrogen atom activation to dry the surface of the base material ionically, Wherein the coating layer is formed on the surface of the substrate.
























KR1020150149867A 2015-10-28 2015-10-28 Manufacturing method and system of metal nitride film for decorative high hardened coating KR20150124441A (en)

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