KR20150114388A - White organic light emitting device - Google Patents

Abstract

The present invention provides a white organic light emitting device which can increase efficiency of light emission and efficiency of a panel. The white organic light emitting device according to the present invention includes: a first light emitting unit which is located between a first electrode and a second electrode and includes a first light emitting layer; a second light emitting unit which is located on the first light emitting unit and includes a second light emitting layer; and a third light emitting unit which is located on the second light emitting unit and includes a third light emitting layer. According to an embodiment of the present invention, the white organic light emitting device has an emission position of emitting layer structure which has the maximum light emitting range in the first light emitting layer, the second light emitting layer, and the third light emitting layer.

Description

WHITE ORGANIC LIGHT EMITTING DEVICE

The present invention relates to an organic light emitting device, and more particularly, to a white organic light emitting device capable of improving light emitting efficiency.

Recently, as the information age has come to the information age, a display field for visually expressing electrical information signals has been rapidly developed. In response to this, a variety of flat display devices having excellent performance such as thinning, light weight, and low power consumption have been developed. Device) is being developed.

Specific examples of such flat panel display devices include a liquid crystal display device (LCD), a plasma display panel (PDP), a field emission display (FED) (Organic Light Emitting Device: OLED).

Particularly, the organic light emitting display device is advantageous in that it has a higher response speed and a larger light emitting efficiency, luminance, and viewing angle than other flat panel display devices.

An organic light emitting display device forms an organic light emitting layer between two electrodes. Electrons and holes are injected from the two electrodes into the organic light emitting layer to generate an exciton resulting from the combination of electrons and holes. Further, it is a device using the principle that light is generated when the generated excitons fall from the excited state to the ground state.

A conventional organic light emitting display includes a blue light emitting layer made of a blue fluorescent material to realize white light. However, the luminescent layer made of the fluorescent material has a theoretical quantum efficiency of about 25% as compared with the luminescent layer made of the phosphorescent material. As a result, the blue light emitting layer made of a fluorescent material does not have a sufficient luminance compared to the phosphorescent material.

[White organic light emitting device] (Patent Application No. 10-2009-0092596)

Conventional organic light emitting devices have limitations in light emitting characteristics and lifetime performance due to the material of the organic light emitting layer and the light emitting structure, and various methods for improving the light emitting efficiency and lifetime have been proposed.

In one approach, there is a method of using a light emitting layer as a single layer. This scheme can produce a white organic light emitting device by using a single material or by doping two or more kinds of materials. For example, there is a method of using red and green dopants for a blue host or adding red, green and blue dopants to a host material having a large band gap energy. However, this method has a problem that the energy transfer to the dopant is incomplete and the balance of white color is difficult to control.

Further, due to the characteristics of the dopant itself, there is a limit to the component of the dopant contained in the light emitting layer. Since the focus of the white light is realized when each light emitting layer is mixed, a wavelength characteristic having an emission peak value at a wavelength other than red, green, and blue is exhibited. do. Therefore, there is a problem that the color reproduction rate is reduced when the color filter is included. In addition, the lifetime of the dopant material varies and color shift occurs in continuous use.

Alternatively, two light emitting layers of a complementary color relationship may be stacked to emit white light. However, in this structure, when the white light passes through the color filter, a difference occurs between the peak wavelength region of each light emitting layer and the transmission region of the color filter. Therefore, the color range that can be expressed is narrowed, which may be difficult to realize a desired color reproduction rate.

For example, when a blue light emitting layer and a yellow light emitting layer are laminated, a peak wavelength is formed in a blue wavelength region and a yellow wavelength region, and white light is emitted. If the white light passes through the red, green, and blue color filters, respectively, the transmittance of the blue wavelength region becomes lower than that of the red or green wavelength region, so that the luminous efficiency and the color reproduction rate are lowered.

Further, the luminous efficiency of the yellow phosphorescent light-emitting layer is relatively higher than the luminous efficiency of the blue fluorescent luminescent layer, thereby reducing the panel efficiency and the color gamut because of the difference in efficiency between the phosphorescent light-emitting layer and the fluorescent light-emitting layer. Further, there is a problem that the luminance of blue is relatively lower than that of yellow.

In addition to this structure, there is a problem that the blue luminance is relatively lower than the green-red color when the blue fluorescent light-emitting layer and the green-red phosphorescent light-emitting layer are laminated.

      As mentioned above, various measures have been proposed to increase the luminous efficiency. However, in order to improve the characteristics of the light emitting layers, there have been limitations in controlling the components of the dopant or the amount of the dopant contained in the light emitting layers.

In addition, the thickness of the light emitting layers, the number of the light emitting layers, the thickness of the organic layers, and the number of the organic layers may be adjusted in order to improve the light emitting efficiency of the light emitting layers at a desired light emitting peak. However, when the light emitting layers and the organic layers are thickly formed, it is difficult to apply them to a large-area organic light emitting display device because the process increases and the lifetime thereof decreases.

      Accordingly, the inventors of the present invention have recognized the above-mentioned problems and have made various experiments which can improve the luminous efficiency by emitting light in the desired luminescent region regardless of the thickness and number of the organic layers regardless of the thickness and number of the luminescent layers .

     As described above, in order to improve the luminous efficiency, two or more light emitting layers may be formed so as to realize a desired white color. However, this increases the driving voltage of the device because the thickness of the device is increased. Although the organic layers constituting the light emitting portion may be composed of several layers having electron or hole transfer characteristics, there is a problem that the driving voltage of the device is increased because the thickness of the device is increased. Further, it has been recognized that it is very difficult to set a desired number and thickness because the number and thickness of the organic layers affect the luminous efficiency and the luminous intensity of the light emitting layer. Therefore, it has been recognized that it is very difficult to construct an organic layer having desired characteristics and a desired number or thickness without increasing the thickness of the device, and capable of realizing a desired white color.

The inventors of the present invention have proposed a structure in which a blue light emitting layer and a yellow-green light emitting layer are stacked to further improve the efficiency of the blue light emitting layer through various experiments. Further, a white organic light emitting device of a lower structure of a new structure capable of improving the light emitting efficiency and the panel efficiency of the light emitting layer in this structure has been invented.

In addition, the inventors of the present invention invented a top emission type white organic light emitting device having a novel structure in which the luminous efficiency and the panel efficiency of the light emitting layer can be improved through the various experiments and a polarizing plate is not used.

According to one embodiment of the present invention, a maximum efficiency can be obtained in the light emitting region of the light emitting layers by applying an EPEL (Emission Position of Emission Layers) structure that sets the light emitting position of the light emitting layer corresponding to the light emitting region of the light emitting layer, And a white organic light emitting device of a lower emission type capable of improving luminous efficiency and panel efficiency.

Further, a solution according to an embodiment of the present invention is to apply an EPEL (Emission Position of Emission Layers) structure in which a light emitting position is set to a light emitting layer, thereby improving the light emitting efficiency, the panel efficiency, And to provide a light emitting element.

In addition, a solution according to an embodiment of the present invention is to provide a white organic light emitting diode (OLED) having an EPEL (Emission Position of Emission Layers) structure, regardless of the number of at least one organic layer, the thickness of the organic layer, .

A white organic light emitting device according to the present invention is a white organic light emitting device comprising: a first light emitting portion which is located between a first electrode and a second electrode and includes a first light emitting layer; and a second light emitting portion located on the first light emitting portion, And a third light emitting portion located on the second light emitting portion and including a third light emitting layer. According to an embodiment of the present invention, the first light emitting portion, the second light emitting portion, and the third light emitting portion include the first light emitting layer corresponding to the light emitting region of the first light emitting layer, the second light emitting layer, (EPEL) structure having a maximum emission range in the emission regions of the second emission layer and the third emission layer, thereby improving the emission efficiency and the panel efficiency of the emission layer.

The organic light emitting diode may be a bottom emission organic light emitting diode.

The position of the first electrode may be set in the range of 4,500 to 6,000 angstroms from the second electrode.

The light emitting position of the third light emitting layer can be set in the range of 200 Å to 800 Å from the second electrode.

The light emitting position of the second light emitting layer can be set in the range of 1,800 to 2,550 angstroms from the second electrode.

The light emitting position of the first light emitting layer may be set in the range of 2,650 Å to 3,300 Å from the second electrode.

The position of the second electrode may be set in the range of 4,500 to 6,000 angstroms from the first electrode.

The light emitting position of the first light emitting layer can be set in the range of 2,000 A to 2,650 A from the first electrode.

The light emitting position of the second light emitting layer can be set in the range of 2,750 Å to 3,500 Å from the first electrode.

The light emitting position of the third light emitting layer can be set in the range of 4,500 to 5,100 angstroms from the first electrode.

The first light emitting layer may include a blue light emitting layer, a blue light emitting layer and a yellow-green light emitting layer, or a blue light emitting layer and a red light emitting layer, or a blue light emitting layer and a green light emitting layer, or a combination thereof.

The second light emitting layer may include a yellow-green light emitting layer, or a yellow light emitting layer and a red light emitting layer, or a red light emitting layer and a green light emitting layer, or a yellow-green light emitting layer and a red light emitting layer, or a combination thereof.

The third light emitting layer may be a blue light emitting layer, or a blue light emitting layer and a yellow-green light emitting layer, or a blue light emitting layer and a red light emitting layer, or a blue light emitting layer and a green light emitting layer, or a combination thereof.

The light emitting region of the first light emitting layer may range from 440 nm to 650 nm, the light emitting region of the second light emitting layer may range from 510 nm to 650 nm, and the light emitting region of the third light emitting layer may range from 440 nm to 650 nm.

The maximum emission range of the first emission layer is in the range of 440 nm to 470 nm, the maximum emission range of the second emission layer is in the range of 530 nm to 570 nm, and the maximum emission range of the third emission layer is in the range of 440 nm to 470 nm .

The second light emitting layer and the third light emitting layer may include a light emitting layer emitting the same color.

 The position of the first electrode may be set in the range of 3,500 to 4,500 angstroms from the second electrode.

The light emitting position of the third light emitting layer can be set in the range of 250 Å to 800 Å from the second electrode.

The light emitting position of the second light emitting layer can be set in the range of 1,450 Å to 1,950 Å from the second electrode.

The light emitting position of the first light emitting layer can be set in the range of 2,050 Å to 2,600 Å from the second electrode.

The first light emitting layer may include a yellow-green light emitting layer, or a yellow light emitting layer and a red light emitting layer, or a red light emitting layer and a green light emitting layer, or a yellow-green light emitting layer and a red light emitting layer, or a combination thereof.

The second light emitting layer and the third light emitting layer may be composed of a blue light emitting layer, a blue light emitting layer and a yellow-green light emitting layer, or a blue light emitting layer and a red light emitting layer, or a blue light emitting layer and a green light emitting layer, or a combination thereof.

The light emitting region of the first light emitting layer may range from 510 nm to 650 nm, the light emitting region of the second light emitting layer may range from 440 nm to 650 nm, and the light emitting region of the third light emitting layer may range from 440 nm to 650 nm.

Wherein the maximum emission range of the first emission layer is in the range of 530 nm to 570 nm, the maximum emission range of the second emission layer is in the range of 440 nm to 470 nm, and the maximum emission range of the third emission layer is in the range of 440 nm to 470 nm .

The position of the second electrode may be set in the range of 3,500 to 4,500 angstroms from the first electrode.

The light emitting position of the first light emitting layer can be set in the range of 1,500 A to 2,050 A from the first electrode.

The light emitting position of the second light emitting layer can be set in the range of 2,150 Å to 2,600 Å from the first electrode.

The light emitting position of the third light emitting layer can be set in the range of 3,300 A to 3,850 A from the first electrode.

The organic light emitting device may be an organic light emitting device of a top emission type.

The position of the second electrode may be set in the range of 4,700 A to 5,400 A from the first electrode.

The light emitting position of the first light emitting layer can be set in the range of 150 to 700 占 from the first electrode.

The light emitting position of the second light emitting layer can be set in the range of 1,600 Å to 2,300 Å from the first electrode.

The light emitting position of the third light emitting layer can be set in the range of 2,400 Å to 3,100 Å from the first electrode.

The light emitting region of the first light emitting layer may range from 440 nm to 650 nm, the light emitting region of the second light emitting layer may range from 510 nm to 650 nm, and the light emitting region of the third light emitting layer may range from 440 nm to 650 nm.

The maximum emission range of the first emission layer is in the range of 440 nm to 470 nm, the maximum emission range of the second emission layer is in the range of 530 nm to 570 nm, and the maximum emission range of the third emission layer is in the range of 440 nm to 470 nm .

The position of the first electrode may be set in a range of 4,700 A to 5,400 A from the second electrode.

The light emitting position of the third light emitting layer can be set in the range of 2,050 Å to 2,750 Å from the second electrode.

The light emitting position of the second light emitting layer can be set in the range of 2,850 Å to 3,550 Å from the second electrode.

The light emitting position of the third light emitting layer may be set in a range of 4,450 Å to 5,000 Å from the first electrode.

The second light emitting layer and the third light emitting layer may include a light emitting layer emitting the same color.

The position of the second electrode may be set in the range of 4,700 A to 5,400 A from the first electrode.

The light emitting position of the first light emitting layer can be set in the range of 200 Å to 700 Å from the first electrode.

The light emitting position of the second light emitting layer can be set in the range of 1,200 A to 1,800 A from the first electrode.

The light emitting position of the third light emitting layer can be set in the range of 2,400 Å to 3,100 Å from the first electrode.

The light emitting region of the first light emitting layer may range from 510 nm to 650 nm, the light emitting region of the second light emitting layer may range from 440 nm to 650 nm, and the light emitting region of the third light emitting layer may range from 440 nm to 650 nm.

Wherein the maximum emission range of the first emission layer is in the range of 530 nm to 570 nm, the maximum emission range of the second emission layer is in the range of 440 nm to 470 nm, and the maximum emission range of the third emission layer is in the range of 440 nm to 470 nm .

The position of the first electrode may be set in a range of 4,700 A to 5,400 A from the second electrode.

The light emitting position of the third light emitting layer can be set in the range of 2,050 Å to 2,750 Å from the second electrode.

The light emitting position of the second light emitting layer can be set in the range of 3,350 Å to 3,950 Å from the second electrode.

The light emitting position of the first light emitting layer may be set in the range of 4,450 Å to 4,950 Å from the second electrode.

The white organic light emitting device according to the present invention includes a first organic layer and a first light emitting layer on a substrate, a second organic layer and a second light emitting layer on the first light emitting layer, a third organic layer on the second light emitting layer, Emitting layer, and a fourth organic layer on the third light-emitting layer, wherein the thickness of the first organic layer, the thickness of the second organic layer, the thickness of the third organic layer, and the thickness of the fourth organic layer, The second light emitting layer and the third light emitting layer have an EPEL (Emission Position of Emitting Layers) structure having a maximum light emitting range in the light emitting regions of the first, second, and third light emitting layers, And a white organic light emitting device capable of improving panel efficiency.

The EPEL structure is characterized in that the first light-emitting layer, the second light-emitting layer, and the third light-emitting layer emit light of the maximum emission regardless of the number of the at least one first organic layer, the number of the second organic layers, the number of the third organic layers, Range. ≪ / RTI >

The EPEL structure is configured such that the first light emitting layer, the second light emitting layer, and the third light emitting layer have a maximum light emitting range regardless of the thickness of at least one first light emitting layer, the thickness of the second light emitting layer, and the thickness of the third light emitting layer .

The EPEL structure is configured such that the first light emitting layer, the second light emitting layer, and the third light emitting layer have a maximum light emitting range regardless of the number of the at least one first light emitting layer, the number of the second light emitting layer, and the number of the third light emitting layer .

The details of other embodiments are included in the detailed description and drawings.

The emission efficiency of the light emitting layer can be improved by applying an EPEL (Emission Position of Emission Layers) structure in which the light emitting region corresponding to the light emitting region is set to the light emitting layer according to an embodiment of the present invention.

Further, since the light emission intensity of the light emitting layer is increased, the panel efficiency and device lifetime can be improved.

Further, the number of at least one light-emitting layer, the thickness of the light-emitting layer, the number of organic layers,

It is possible to form an organic light emitting device suitable for the structure and characteristics of the device by applying the EPEL (Emission Position of Emission Layers) structure regardless of the thickness of the device.

In addition, since no polarizer is required, an organic light emitting display having improved aperture ratio and brightness can be provided.

The effects of the present invention are not limited to the effects mentioned above, and other effects not mentioned can be clearly understood by those skilled in the art from the following description.

The scope of the claims is not limited by the matters described in the contents of the invention, as the contents of the invention described in the problems, the solutions to the problems and the effects to be solved do not specify essential features of the claims.

1 is a schematic view showing a white organic light emitting device according to a first embodiment and a second embodiment of the present invention.
2 is a view illustrating a white organic light emitting device according to a first embodiment of the present invention.
3 is a view illustrating a light emitting position of the organic light emitting diode according to the first embodiment of the present invention.
4 is a diagram showing an EL spectrum according to a comparative example and a first embodiment of the present invention.
5 is a view illustrating a white organic light emitting device according to a second embodiment of the present invention.
6 is a view illustrating a light emitting position of an organic light emitting diode according to a second embodiment of the present invention.
7 is a diagram showing an EL spectrum according to a comparative example and a second embodiment of the present invention.
8 is a view illustrating a white organic light emitting device according to a third embodiment of the present invention.
9 is a view illustrating a light emitting position of an organic light emitting diode according to a third embodiment of the present invention.
10 is a diagram showing an EL spectrum according to a comparative example and a third embodiment of the present invention.
11 is a view illustrating an organic light emitting display according to the first to third embodiments of the present invention.
12 is a schematic view showing a white organic light emitting device according to fourth and fifth embodiments of the present invention.
13 is a view illustrating a white organic light emitting device according to a fourth embodiment of the present invention.
FIG. 14 is a view showing a light emitting position of an organic light emitting diode according to a fourth embodiment of the present invention.
15 is a diagram showing an EL spectrum according to the fourth embodiment of the present invention.
16 is a view illustrating a white organic light emitting device according to a fifth embodiment of the present invention.
17 is a view showing a light emitting position of an organic light emitting diode according to a fifth embodiment of the present invention.
18 is a diagram showing an EL spectrum according to the fifth embodiment of the present invention.
19 is a view illustrating a white organic light emitting device according to a sixth embodiment of the present invention.
20 is a view showing a light emitting position of an organic light emitting diode according to a sixth embodiment of the present invention.
21 is a diagram showing an EL spectrum according to the sixth embodiment of the present invention.
22 is a view illustrating an organic light emitting diode display according to fourth to sixth embodiments of the present invention.
23 is a schematic view showing a white organic light emitting device according to seventh and eighth embodiments of the present invention.
24 is a view illustrating a white organic light emitting device according to a seventh embodiment of the present invention.
25 is a view showing a light emitting position of an organic light emitting diode according to a seventh embodiment of the present invention.
26 is a diagram showing an EL spectrum according to a seventh embodiment of the present invention.
27 is a view illustrating a white organic light emitting device according to an eighth embodiment of the present invention.
28 is a view showing a light emitting position of an organic light emitting diode according to an eighth embodiment of the present invention.
29 is a diagram showing an EL spectrum according to an eighth embodiment of the present invention.
30 is a view illustrating a white organic light emitting device according to a ninth embodiment of the present invention.
31 is a view showing a light emitting position of an organic light emitting diode according to a ninth embodiment of the present invention.
32 is a diagram showing an EL spectrum according to a ninth embodiment of the present invention.
FIG. 33 is a diagram illustrating an OLED display according to a seventh embodiment through a ninth embodiment of the present invention. FIG.
34 is a schematic view showing a white organic light emitting device according to a tenth embodiment of the present invention.
35 is a view illustrating a white organic light emitting device according to a tenth embodiment of the present invention.
FIG. 36 is a view illustrating a light emitting position of an organic light emitting diode according to a tenth embodiment of the present invention.
37 is a diagram showing an EL spectrum according to a tenth embodiment of the present invention.
38 is a view illustrating a white organic light emitting device according to an eleventh embodiment of the present invention.
FIG. 39 is a view showing a light emitting position of an organic light emitting diode according to an eleventh embodiment of the present invention. FIG.
40 is a diagram showing an EL spectrum according to an eleventh embodiment of the present invention.
FIG. 41 is a diagram illustrating an organic light emitting display according to a tenth embodiment and an eleventh embodiment of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention, and the manner of achieving them, will be apparent from and elucidated with reference to the embodiments described hereinafter in conjunction with the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Is provided to fully convey the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims.

The shapes, sizes, ratios, angles, numbers, and the like disclosed in the drawings for describing the embodiments of the present invention are illustrative, and thus the present invention is not limited thereto. Like reference numerals refer to like elements throughout the specification. In the following description, well-known functions or constructions are not described in detail since they would obscure the invention in unnecessary detail. In the case where the word 'includes', 'having', 'done', etc. are used in this specification, other parts can be added unless '~ only' is used. Unless the context clearly dictates otherwise, including the plural unless the context clearly dictates otherwise.

In interpreting the constituent elements, it is construed to include the error range even if there is no separate description.

In the case of a description of the positional relationship, for example, if the positional relationship between two parts is described as 'on', 'on top', 'under', and 'next to' Or " direct " is not used, one or more other portions may be located between the two portions.

In the case of a description of a temporal relationship, for example, if the temporal relationship is described by 'after', 'after', 'after', 'before', etc., May not be continuous unless they are not used.

The first, second, etc. are used to describe various components, but these components are not limited by these terms. These terms are used only to distinguish one component from another. Therefore, the first component mentioned below may be the second component within the technical spirit of the present invention.

It is to be understood that each of the features of the various embodiments of the present invention may be combined or combined with each other, partially or wholly, and technically various interlocking and driving are possible, and that the embodiments may be practiced independently of each other, It is possible.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings and embodiments.

1 is a schematic view showing a white organic light emitting device according to a first embodiment and a second embodiment of the present invention.

The organic light emitting device is classified into a bottom emission type and a top emission type according to the transmission direction of emitted light. In the first to third embodiments of the present invention, the bottom emission type will be described as an example.

Here, an electroluminescence peak (EL peak) of an organic light emitting display device to which the organic light emitting device including the first, second, and third light emitting portions are applied may be a photo-emission peak (PhotoLuminescence Peak) indicating an intrinsic color of the light emitting layer. PL peak) of the organic layer and the emission peak (EM peak) of the organic layer constituting the organic light emitting device.

The white organic light emitting device 100 shown in FIG. 1 includes a first light emitting unit 110 and a second light emitting unit 110 disposed between the first and second electrodes 102 and 104 and the first and second electrodes 102 and 104, 120 and a third light emitting unit 130.

The first electrode 102 may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), or the like, which is a transparent conductive material such as TCO (Transparent Conductive Oxide). However, the present invention is not limited thereto.

The second electrode 104 may be formed of a metallic material such as gold (Au), silver (Ag), aluminum (Al), molybdenum (Mo), magnesium (Mg) . However, the present invention is not limited thereto.

The first electrode 102 and the second electrode 104 may be referred to as an anode or a cathode, respectively.

The first electrode may be a transmissive electrode, and the second electrode may be a reflective electrode.

The present invention is characterized in that a first light emitting portion 110, a second light emitting portion 120 and a third light emitting portion 130 including a blue light emitting layer are formed between a first electrode 102 and a second electrode 104, The light emitting efficiency of the (Blue) light emitting layer can be improved. The positions of the first electrode 102 from the second electrode 104 and the positions of the first light emitting layer of the first light emitting portion 110 and the second light emitting layer of the second light emitting portion 120 and the third The emission position of the third light emitting layer of the light emitting unit 130 is set to improve the light emitting efficiency and the panel efficiency. That is, an EPEL (Emission Position of Emitting Layers) structure is applied to the first light emitting layer, the second light emitting layer, and the third light emitting layer.

The position (L0) of the first electrode 102 is set to be 4,500 to 6,000 ANGSTROM from the second electrode 104. Alternatively, the position (L0) of the first electrode 102 is set to be within a range of 4,500 to 6,000 angstroms from the reflective surface of the second electrode 104. [ The emission peak of the light emitting layer constituting the first, second, and third light emitting units 110, 120 and 130 is positioned at a specific wavelength, and light having a specific wavelength The light emitting efficiency can be improved. The emission peak may be referred to as an emission peak of an organic layer constituting the light emitting units.

 The position L0 of the first electrode 102 is set from the second electrode 104 and the light emitting position L1 of the third light emitting portion 130 closest to the second electrode 104 Is set to be within a range of 200 ANGSTROM to 800 ANGSTROM. Alternatively, the light emitting position L1 of the third light emitting portion 130 is set to be within a range of 200 to 800 angstroms from the reflective surface of the second electrode 104. [ The third light emitting part 130 may include a blue light emitting layer or a blue light emitting layer and a yellow light emitting layer or a blue light emitting layer and a red light emitting layer or a blue light emitting layer Blue ) And a green (Green) light emitting layer, or a combination thereof. The blue light emitting layer may include one of a blue light emitting layer, a deep blue light emitting layer, and a sky blue light emitting layer. Since the deep blue light emitting layer is located in a shorter wavelength region than the blue light emitting layer, the deep blue light emitting layer can be advantageous for improving the color reproduction rate and brightness.

The light emitting position L1 of the third light emitting portion 130 may be 200 to 800 Å from the second electrode 104 regardless of at least one of the thickness of the light emitting layer, the number of light emitting layers, the thickness of the organic layer, Range. Alternatively, the light emitting position L1 of the third light emitting portion 130 is set to be within a range of 200 to 800 angstroms from the reflective surface of the second electrode 104. [ Therefore, when the emission peak is a blue light emitting region, or a blue light emitting region, a blue light emitting region, a yellow light emitting region, a blue light emitting region, a red light emitting region, or a blue light emitting region, And the green light emitting region and emits light having a wavelength corresponding to the emission peak so that the third light emitting portion 130 can emit the maximum luminance. The peak wavelength of the blue light emitting layer may range from 440 nm to 480 nm.

In addition, the peak wavelength range of the blue light-emitting layer and the yellow-green light-emitting layer may be 440 nm to 580 nm. The peak wavelength range of the blue light emitting layer and the red light emitting layer may be in the range of 440 nm to 650 nm. The peak wavelength range of the blue light emitting layer and the green light emitting layer may be 440 nm to 560 nm. Here, the peak wavelength may be a light emitting region.

The light emitting position L2 of the second light emitting portion 120 is set to be within the range of 1,800 to 2,550 angstroms from the second electrode 104. [ Alternatively, the light emitting position L2 of the second light emitting portion 120 is set to be within a range of 1,800 Å to 2,550 Å from the reflective surface of the second electrode 104. The second light emitting portion 120 may include a yellow-green light emitting layer or a red light emitting layer and a green light emitting layer or a yellow light emitting layer and a red light emitting layer or a yellow- Yellow-Green) light-emitting layer, and a red (Red) light-emitting layer, or a combination thereof.

The light emitting position L2 of the second light emitting portion 120 may be set to be in a range of 1,800 to 2,550 mm from the second electrode 104 regardless of at least one of the thickness of the light emitting layer, the number of light emitting layers, Å. Alternatively, the light emitting position L2 of the second light emitting portion 120 is set to be within a range of 1,800 Å to 2,550 Å from the reflective surface of the second electrode 104. Therefore, the emission peak is located in the yellow-green emission region, or the yellow and red emission regions, or the red and green emission regions, or the yellow-green and red emission regions, The second light emitting unit 120 can emit light with a wavelength corresponding to the emission wavelength of the first light emitting unit 120. [ The peak wavelength range of the yellow-green light emitting layer may range from 510 nm to 580 nm. The peak wavelength range of the yellow light-emitting layer and the red light-emitting layer may be from 540 nm to 650 nm. In addition, the peak wavelength range of the red light emitting layer and the green light emitting layer may be 510 nm to 650 nm. In addition, the peak wavelength range of the yellow-green light-emitting layer and the red light-emitting layer may be 510 nm to 650 nm. Here, the peak wavelength may be a light emitting region.

The light emitting position L3 of the first light emitting portion 110 is set to be 2,650 Å to 3,300 Å from the second electrode 104. Alternatively, the light emitting position L3 of the first light emitting portion 110 is set to be 2,650 Å to 3,300 Å from the reflective surface of the second electrode 104. The first light emitting portion 110 may include a blue light emitting layer or a blue light emitting layer and a yellow-green light emitting layer or a blue light emitting layer and a red light emitting layer or a blue light emitting layer, A light emitting layer, and a green (Green) light emitting layer, or a combination thereof. The blue light emitting layer may include one of a blue light emitting layer, a deep blue light emitting layer, and a sky blue light emitting layer. Since the deep blue light emitting layer is located in a shorter wavelength region than the blue light emitting layer, the deep blue light emitting layer can be advantageous for improving the color reproduction rate and brightness.

The light emitting position L3 of the first light emitting portion 110 may be from 2,650 Å to 3,300 Å from the second electrode 104 regardless of at least one of the thickness of the light emitting layer, the number of light emitting layers, A ". Alternatively, the light emitting position L3 of the first light emitting portion 110 is set to be within a range of 2,650 Å to 3,300 Å from the reflective surface of the second electrode 104. Accordingly, the emission peak of the first light emitting portion 110 is located in the blue light emitting region, so that the first light emitting portion 110 can emit the maximum luminance. The peak wavelength of the blue light emitting layer may range from 440 nm to 480 nm. In addition, the peak wavelength range of the blue light-emitting layer and the yellow-green light-emitting layer may be 440 nm to 580 nm. The peak wavelength range of the blue light emitting layer and the red light emitting layer may be in the range of 440 nm to 650 nm. The peak wavelength range of the blue light emitting layer and the green light emitting layer may be 440 nm to 560 nm. Here, the peak wavelength may be a light emitting region.

The present invention sets the position of the first electrode 102 from the second electrode 104 regardless of at least one of the thickness of the light emitting layer, the number of light emitting layers, the thickness of the organic layer, and the number of organic layers, And an emission position of emitting layer (EPEL) structure in which the emission position of the light emitting layers is set from the electrode 104 is applied.

 2 is a view illustrating a white organic light emitting device according to a first embodiment of the present invention.

The white organic light emitting device 100 shown in FIG. 2 includes a first light emitting portion 110 and a second light emitting portion 120 between the first and second electrodes 102 and 104 and the first and second electrodes 102 and 104, And a third light emitting unit 130.

The first electrode 102 and the second electrode 104 may be referred to as an anode or a cathode, respectively.

The position of the first electrode 102 is set to be 4,500 to 6,000 angstroms from the second electrode 104. The emission peak of the light emitting layers constituting the first, second and third light emitting units 110, 120 and 130 is set by setting the position L0 of the first electrode 102, Can be positioned at a specific wavelength, and the efficiency of the light emitting layers can be improved by emitting light of the specific wavelength. The first light emitting portion 110, the second light emitting portion 120, and the third light emitting portion 130 are formed in the light emitting region of the first light emitting layer, the second light emitting layer, (Emission Position of Emitting Layers) structure.

The third light emitting unit 130 includes a third electron transport layer (ETL) 136, a third emission layer (EML) 134, a third hole transport layer And a hole transporting layer (HTL) 132. Although not shown in the drawing, an electron injection layer (EIL) may be additionally formed on the third electron transport layer (ETL) 136. The electron injection layer (EIL) injects electrons from the second electrode (104) into the third electron transport layer (ETL) (136).

The third electron transport layer (ETL) 136 may be formed of oxadiazole, triazole, phenanthroline, benzoxazole, or benzthiazole, But the present invention is not limited thereto.

The third electron transport layer (ETL) 136 may be formed by applying two or more layers or two or more materials.

The third hole transport layer (HTL) 132 may be formed of TPD (N, N'-bis (3-methylphenyl) -N, N'- 1-yl) -N, N'-diphenyl-benzidine), but the present invention is not limited thereto.

The third hole transport layer (HTL) 132 may be formed by applying two or more layers or two or more materials.

A hole injection layer (HIL) may be further formed under the third hole transport layer (HTL) 132. The hole injection layer (HIL) injects holes from the second charge generation layer (CGL) 150 into the third hole transport layer (HTL) 132.

A hole blocking layer (HBL) may be further formed on the third emission layer (EML) 134. The hole blocking layer HBL protects the third emission layer (EML) 134 by preventing the holes generated in the third emission layer (EML) 134 from flowing to the third electron transport layer (ETL) It is possible to improve the light emitting efficiency of the third light emitting layer (EML) 134 by improving the combination of electrons and holes. The third electron transport layer (ETL) 136 and the hole blocking layer HBL may be formed as one layer.

An electron blocking layer (EBL) may be further formed under the third emission layer (EML) 134. The electron blocking layer EBL prevents the electrons generated in the third emission layer 134 from being transferred to the third hole transport layer 132, It is possible to improve the light emitting efficiency of the third light emitting layer (EML) 134 by improving the combination of electrons and holes. The third hole transport layer (HTL) 132 and the electron blocking layer EBL may be formed as one layer.

The third emission layer (EML) 134 may include a blue emission layer or a blue emission layer including an auxiliary emission layer capable of emitting different colors. The blue light emitting layer may include one of a blue light emitting layer, a deep blue light emitting layer, and a sky blue light emitting layer. Since the deep blue light emitting layer is located in a shorter wavelength region than the blue light emitting layer, the deep blue light emitting layer can be advantageous for improving the color reproduction rate and brightness.

The auxiliary light-emitting layer may be formed of one of a yellow-green light-emitting layer, a red light-emitting layer, and a green light-emitting layer, or a combination thereof. When the auxiliary light-emitting layer is further formed, the emission efficiency of the green light-emitting layer and the red light-emitting layer can be further improved. When forming the third light emitting layer (EML) 134 including the auxiliary light emitting layer, the yellow-green light emitting layer, the red light emitting layer, or the green light emitting layer is formed in the third light emitting layer (EML) It is also possible to arrange it on the upper side or the lower side.

Further, a yellow-green or red light-emitting layer or a green light-emitting layer may be formed on the lower and upper portions of the third light-emitting layer (EML) 134 as the auxiliary light- have. The position and the number of the light emitting layer can be selectively arranged depending on the configuration and characteristics of the device, and the present invention is not limited thereto.

When the auxiliary emission layer is formed in the third emission layer (EML) 134, the peak wavelength of the emission region of the third emission layer (EML) 134 may be in the range of 440 nm to 650 nm. have. Here, the peak wavelength may be a light emitting region.

All layers such as the third electron transport layer (ETL) 136, the third emission layer (EML) 134, the electron injection layer (EIL), and the hole blocking layer (HBL) may be referred to as an organic layer. All organic layers between the second electrode 104 and the third emission layer (EML) 134 and the third emission layer (EML) 134 may be referred to as an organic layer. Accordingly, all of the organic layers between the second electrode 104 and the third emission layer (EML) 134 may be referred to as a fourth organic layer.

Irrespective of the number or thickness of the third electron transport layer (ETL) 136 or irrespective of the number or thickness of the third emission layer (EML) 134 or the number or thickness of the electron injection layer (EIL) Regardless of the number or thickness of the hole blocking layer HBL or the number or thickness of all the organic layers between the second electrode 104 and the third emission layer (EML) 134, (EML) 134 is set to be within a range of 200 Å to 800 Å from the second electrode 104. Alternatively, the emission position L1 of the third emission layer (EML) 134 is set to be within a range of 200 Å to 800 Å from the reflective surface of the second electrode 104. (EML) 134 of the third light emitting layer (EML) 134 regardless of the number of the at least one fourth organic layer, the thickness of the fourth organic layer, the number of the third light emitting layers, May be set to be within a range of 200 Å to 800 Å from the second electrode 104. (EML) 134 of the third light emitting layer (EML) 134 regardless of the number of the at least one fourth organic layer, the thickness of the fourth organic layer, the number of the third light emitting layer, May be set to be within a range of 200 Å to 800 Å from the reflective surface of the second electrode 104.

The second light emitting unit 120 may include a second hole transport layer (HTL) 122, a second emission layer (EML) 124, and a second electron transport layer (ETL) 126.

The second electron transport layer (ETL) 126 may be made of the same material as the third electron transport layer (ETL) 136, but is not limited thereto.

The second electron transport layer (ETL) 126 may be formed by applying two or more layers or two or more materials.

The second hole transport layer (HTL) 122 may be made of the same material as the third hole transport layer (HTL) 132, but is not limited thereto.

The second hole transporting layer (HTL) 122 may be formed by applying two or more layers or two or more materials.

A hole injection layer (HIL) may be further formed under the second hole transport layer (HTL) 122. The hole injection layer (HIL) injects holes from the first charge transport layer (CGL) 140 into the second hole transport layer (HTL) 122.

A hole blocking layer (HBL) may further be formed on the second emission layer (EML) 124. The hole blocking layer HBL prevents the holes generated in the second light emitting layer 124 from being transferred to the second electron transporting layer 126, The light emitting efficiency of the second light emitting layer (EML) 124 can be improved. The second electron transport layer (ETL) 126 and the hole blocking layer HBL may be formed as a single layer.

An electron blocking layer (EBL) may be further formed under the second emission layer (EML) 124. The electron blocking layer EBL prevents electrons generated in the second emission layer (EML) 124 from being transferred to the second hole transport layer (HTL) 122, The light emitting efficiency of the second light emitting layer (EML) 124 can be improved. The second hole transport layer (HTL) 122 and the electron blocking layer EBL may be formed as one layer.

The second light emitting layer (EML) 124 may include a yellow-green light emitting layer or a yellow light emitting layer and a red light emitting layer or a red light emitting layer and a green light emitting layer, A green (Yellow-Green) light-emitting layer, and a red (Red) light-emitting layer, or a combination thereof. When a red light-emitting layer is further formed in the yellow-green light-emitting layer, the efficiency of the red light-emitting layer can be further improved. The red light-emitting layer may be formed above or below the yellow-green light-emitting layer. The yellow light-emitting layer and the red light-emitting layer, or the red light-emitting layer and the green light-emitting layer, or the yellow-green light-emitting layer and the red light- (EML) 124. In this case, The yellow light-emitting layer and the red light-emitting layer, or the red light-emitting layer and the green light-emitting layer, or the yellow-green light-emitting layer and the red light- EML) 124, or may be configured differently.

The peak wavelength of the light emitting region of the yellow light emitting layer may be in the range of 540 nm to 580 nm. The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. Therefore, the peak wavelength of the light emitting region of the yellow light emitting layer and the red light emitting layer may be in the range of 540 nm to 650 nm. Here, the peak wavelength may be a light emitting region. The light emitting efficiency of the red light emitting layer can be increased when the light emitting layer is composed of two layers of the yellow light emitting layer and the red light emitting layer.

The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. The peak wavelength of the luminescent region of the green light emitting layer may be in the range of 510 nm to 560 nm. Therefore, the peak wavelength of the luminescent region of the red light emitting layer and the green light emitting layer can be in the range of 510 nm to 650 nm. Here, the peak wavelength may be a light emitting region. When the red light emitting layer and the green light emitting layer are formed of two layers, the color reproducibility can be improved.

The peak wavelength of the light emitting region of the yellow light emitting layer may be in the range of 540 nm to 580 nm. The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. Therefore, the peak wavelength of the light emitting region of the yellow light emitting layer and the red light emitting layer may be in the range of 540 nm to 650 nm. Here, the peak wavelength may be a light emitting region. The light emitting efficiency of the red light emitting layer can be increased when the light emitting layer is composed of two layers of the yellow light emitting layer and the red light emitting layer.

The second light emitting layer (EML) 224 of the second light emitting portion 220 may include two layers of a red light emitting layer and a yellow-green light emitting layer depending on the characteristics and structure of the device. can do. The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. The peak wavelength of the light emitting region of the yellow-green light emitting layer may be in the range of 510 nm to 580 nm. When the red light-emitting layer and the yellow-green light-emitting layer are composed of two layers, the light-emitting efficiency of the red light-emitting layer can be increased. In this case, the peak wavelength of the emission region of the second emission layer (EML) 224 may be in the range of 510 nm to 650 nm. Here, the peak wavelength may be a light emitting region.

The second light emitting layer (EML) 124 may be a yellow-green light emitting layer or a yellow light emitting layer and a red light emitting layer or a red light emitting layer and a green light emitting layer, A peak wavelength of the luminescent region of the second emission layer (EML) 124 is 510 nm to 650 nm, and the emission wavelength of the second emission layer (EML) Nm. ≪ / RTI > Here, the peak wavelength may be a light emitting region.

A second charge generating layer (CGL) 150 may be further formed between the second light emitting unit 120 and the third light emitting unit 130. The second charge generation layer (CGL) 150 controls the charge balance between the second and third light emitting portions 120 and 130. The second charge generation layer (CGL) 150 may include an N-type charge generation layer (N-CGL) and a P-type charge generation layer (P-CGL).

The N-type charge generation layer injects electrons into the second light emitting portion 120 and the P-type charge generation layer injects holes into the third light emitting portion 130 .

The N-type charge generation layer (N-CGL) may be composed of an organic layer doped with an alkali metal such as Li, Na, K or Cs or an alkaline earth metal such as Mg, Sr, Ba or Ra, But is not limited thereto.

The P-type charge generation layer (P-CGL) may be formed of an organic layer containing a P-type dopant, but the present invention is not limited thereto.

The second charge generating layer (CGL) 150 may be a single layer.

The second light emitting layer (EML) 124, the second electron transport layer (ETL) 126, the second charge generation layer (CGL) 150, the third hole transport layer (HTL) All layers such as a layer (HBL), an electron blocking layer (EBL), and a hole injection layer (HIL) can be referred to as an organic layer. All organic layers between the third emission layer (EML) 134 and the second emission layer (EML) 124 and the second emission layer (EML) 124 may be referred to as an organic layer. Therefore, all of the organic layers between the third emission layer (EML) 134 and the second emission layer (EML) 124 may be referred to as a third organic layer.

(ETL) 126, regardless of the number or thickness of the third hole transporting layer (HTL) 132 or the number or thickness of the second charge generating layer (CGL) 150, Irrespective of the number and thickness of the hole injection layer (HIL), or regardless of the number or thickness of the hole blocking layer (HBL) or the number or thickness of the electron blocking layer (EBL) (EML) 134, regardless of the number or thickness of the second light emitting layer (EML) 124 or the number or thickness of the third light emitting layer (EML) 134, or between the second electrode 104 and the third light emitting layer Regardless of the number or thickness of all the organic layers between the third light emitting layer (EML) 134 and the second light emitting layer (EML) 124, The light emitting position L2 of the second emission layer (EML) 124 is set to be within a range of 1,800 to 2,550 angstroms from the second electrode 104 do. Alternatively, the emission position L2 of the second emission layer (EML) 124 is set to be within a range of 1,800 to 2,550 angstroms from the reflective surface of the second electrode 104.

Therefore, the number of the at least one fourth organic layer, the thickness of the fourth organic layer, the number of the third organic layers, the thickness of the third organic layer, the number of the third light emitting layers, the thickness of the third light emitting layer, The emission position L2 of the second emission layer (EML) 124 can be set to be within a range of 1,800 to 2,550 angstroms from the second electrode 104 regardless of the number of the emission layers and the thickness of the second emission layer have. Alternatively, regardless of the number of the at least one fourth organic layer, the thickness of the fourth organic layer, the number of the third organic layers, the thickness of the third organic layer, the number of the third light emitting layers, and the thickness of the third light emitting layer, The light emitting position L2 of the second emission layer (EML) 124 is set to be in a range of 1,800 to 2,550 angstroms from the reflective surface of the second electrode 104 regardless of the number of the second light emitting layers and the thickness of the second light emitting layer. Range.

The first light emitting part 110 includes a first hole transport layer (HTL) 112, a first light emitting layer (EML) 114, and a first electron transport layer (ETL) 116 on the first electrode 102 .

Although not shown in the drawing, a hole injection layer (HIL) can be additionally formed. The hole injection layer HIL is formed on the first electrode 102 and smoothly injects holes from the first electrode 102. The first hole transport layer (HTL) 112 supplies holes from the hole injection layer (HIL) to the first emission layer (EML) 114. The first electron transport layer (ETL) 116 supplies electrons from the second electrode 104 to the first emission layer (EML) 114.

The hole injecting layer (HIL) may be formed by using 4,4 ', 4 "-tris (3-methylphenylphenylamino) triphenylamine, CuPc or PEDOT / But is not limited thereto.

In the first emission layer (EML) 114, electrons supplied through the first hole transport layer (HTL) 112 and electrons supplied through the first electron transport layer (ETL) Light is generated.

The first electron transport layer (ETL) 116 may be formed of the same material as the third electron transport layer (ETL) 136, but is not limited thereto.

The first electron transport layer (ETL) 116 may be formed by applying two or more layers or two or more materials.

The first hole transport layer (HTL) 112 may be formed of the same material as the third hole transport layer (HTL) 132, but is not limited thereto.

The first hole transport layer (HTL) 112 may be formed by applying two or more layers or two or more materials.

A hole blocking layer (HBL) may further be formed on the first emission layer (EML) 114. The hole blocking layer HBL prevents holes generated in the first emission layer 114 from flowing to the first electron transport layer 116 to prevent the electrons emitted from the first emission layer 114, The light emitting efficiency of the first emission layer (EML) 114 can be improved. The first electron transport layer (ETL) 116 and the hole blocking layer HBL may be formed as one layer.

An electron blocking layer (EBL) may be further formed under the first emission layer (EML) 114. The electron blocking layer EBL prevents the electrons generated in the first emitting layer 114 from being transferred to the first hole transporting layer 112, The light emitting efficiency of the first emission layer (EML) 114 can be improved. The first hole transport layer (HTL) 112 and the electron blocking layer (EBL) may be formed as a single layer.

The first light emitting layer (EML) 114 is composed of a blue light emitting layer or a blue light emitting layer including an auxiliary light emitting layer capable of emitting different colors. The blue light emitting layer may include one of a blue light emitting layer, a deep blue light emitting layer, and a sky blue light emitting layer. Since the deep blue light emitting layer is located in a shorter wavelength region than the blue light emitting layer, the deep blue light emitting layer can be advantageous for improving the color reproduction rate and brightness.

The auxiliary light-emitting layer may be formed of one of a yellow-green light-emitting layer, a red light-emitting layer, and a green light-emitting layer, or a combination thereof. When the auxiliary light-emitting layer is further formed, the emission efficiency of the green light-emitting layer and the red light-emitting layer can be further improved. When forming the first light emitting layer (EML) 114 including the auxiliary light emitting layer, the yellow-green light emitting layer or the red light emitting layer or the green light emitting layer is formed in the first light emitting layer (EML) 114 on the upper side or the lower side. A yellow-green light-emitting layer or a red light-emitting layer or a green light-emitting layer may be formed on the lower and upper portions of the first light-emitting layer (EML) 114 as the auxiliary light- . The position and the number of the light emitting layer can be selectively arranged depending on the configuration and characteristics of the device, and the present invention is not limited thereto.

When the auxiliary light emitting layer is formed in the first light emitting layer (EML) 114, the peak wavelength of the light emitting region of the first light emitting layer (EML) 114 may be in the range of 440 nm to 650 nm. have. Here, the peak wavelength may be a light emitting region.

A first charge generating layer (CGL) 140 may be further formed between the first light emitting portion 110 and the second light emitting portion 120. The first charge generation layer (CGL) 140 controls the charge balance between the first and second light emitting portions 110 and 120. The first charge generation layer (CGL) 140 may include an N-type charge generation layer and a P-type charge generation layer.

The N-type charge generation layer injects electrons into the first light emitting portion 110 and the P-type charge generation layer injects holes into the second light emitting portion 120 .

The first charge generation layer (CGL) 140 may be formed of the same material as the N-type charge generation layer and the P-type charge generation layer of the second charge generation layer (CGL) 150, no.

The first charge generation layer (CGL) 140 may be a single layer.

(ETL) 114, the first electron transport layer (ETL) 116, the first charge generation layer (CGL) 140, the second hole transport layer (HTL) 122, All layers such as a layer HBL, an electron blocking layer EBL, and a hole injection layer HIL can be referred to as an organic layer. All the organic layers between the second emission layer (EML) 124 and the first emission layer (EML) 114 and the first emission layer (EML) 114 may be referred to as an organic layer. Accordingly, all the organic layers between the second emission layer (EML) 124 and the first emission layer (EML) 114 may be referred to as a second organic layer.

(EBL), regardless of the number or thickness of the second hole transporting layer (HTL) 122 or the number or thickness of the first charge generating layer (CGL) 140 or the thickness or thickness of the electron blocking layer Irrespective of the number and thickness of the first electron transport layer (ETL) 116, or the thickness of the first electron transport layer (ETL) 116, irrespective of the number or thickness of the hole injection layer (HIL) (EML) 114 regardless of the number or thickness of the first light emitting layer (EML) 114 or the number or thickness of the second light emitting layer (EML) 124 or the number or thickness of the third light emitting layer (EML) 134 and the second light emitting layer (EML) 134, regardless of the number or thickness of all organic layers between the second electrode 104 and the third light emitting layer (EML) 124 and between the second emission layer (EML) 124 and the first emission layer (EML) 114, regardless of the number or thickness of all the organic layers between the emission layer The light emitting position L3 of the first emission layer (EML) 114 is set to be within a range of 2,650 Å to 3,300 Å from the second electrode 104 regardless of the number and thickness of all the organic layers. Alternatively, the emission position L3 of the first emission layer (EML) 114 is set to be within a range of 2,650 Å to 3,300 Å from the reflective surface of the second electrode 104.

Therefore, the number of the at least one fourth organic layer, the thickness of the fourth organic layer, the number of the third organic layers, the thickness of the third organic layer, the number of the second organic layers, the thickness of the second organic layer, Regardless of the number of the light emitting layers, the thickness of the third light emitting layer, the number of the second light emitting layers, the thickness of the second light emitting layer, the number of the first light emitting layers, and the thickness of the first light emitting layer, Can be set to be within a range of 2,650 Å to 3,300 Å from the second electrode 104. Or the number of the at least one fourth organic layer, the thickness of the fourth organic layer, the number of the third organic layers, the thickness of the third organic layer, the number of the second organic layers, the thickness of the second organic layer, Regardless of the number of the light emitting layers, the thickness of the third light emitting layer, the number of the second light emitting layers, the thickness of the second light emitting layer, the number of the first light emitting layers, and the thickness of the first light emitting layer, May be set to be within a range of 2,650 Å to 3,300 Å from the reflective surface of the second electrode 104.

The first hole transport layer (HTL) 112, the electron blocking layer (EBL), the hole injection layer (HIL), etc. between the first emission layer (EML) 114 and the substrate 101 are referred to as an organic layer can do. Accordingly, all the layers, including the first electrode 102, between the first emission layer (EML) 114 and the substrate 101 can be referred to as an organic layer. All the organic layers between the first emission layer (EML) 114 and the substrate 101 and the first electrode 102 may be referred to as a first organic layer.

Regardless of the number or thickness of the hole injection layer (HIL) or the number or thickness of the electron blocking layer (EBL), or the thickness of the first hole transport layer (HTL) Regardless of the number or thickness of the electrodes 102 or the number or thickness of the first light emitting layer (EML) 114 or the number or thickness of the second light emitting layer (EML) 124, Irrespective of the number and thickness of all the organic layers between the second electrode 104 and the third emission layer (EML) 134, or the number of the organic layers between the second electrode 104 and the third emission layer (EML) (EML) 124 and the first light emitting layer (EML) 124, regardless of the number or thickness of all the organic layers between the light emitting layer (EML) 134 and the second light emitting layer (EML) 114 or between the first emission layer (EML) 114 and the substrate 101, regardless of the number or thickness of all the organic layers between the first emission layer (EML) 114 and the substrate 101 Position (L0) of the first electrode 102 regardless of the thickness or may be set so as to be positioned in the range of 4,500Å to 6,000Å from the second electrode (104). Alternatively, the position (L0) of the first electrode 102 may be set within a range of 4,500 to 6,000 angstroms from the reflective surface of the second electrode 104. [

Therefore, the number of the at least one fourth organic layer, the thickness of the fourth organic layer, the number of the third organic layers, the thickness of the third organic layer, the number of the second organic layers, the thickness of the second organic layer, The thickness of the third light emitting layer, the thickness of the second light emitting layer, the thickness of the second light emitting layer, the thickness of the first light emitting layer, the number of the first organic layer, The position L0 of the first electrode 102 can be set to be within a range of 4,500 to 6,000 angstroms from the second electrode 104 regardless of the thickness of the first electrode 102. [ Or the number of the at least one fourth organic layer, the thickness of the fourth organic layer, the number of the third organic layers, the thickness of the third organic layer, the number of the second organic layers, the thickness of the second organic layer, The thickness of the third light emitting layer, the thickness of the second light emitting layer, the thickness of the second light emitting layer, the thickness of the first light emitting layer, the number of the first organic layer, The position L0 of the first electrode 102 can be set to be within a range of 4,500 to 6,000 angstroms from the reflective surface of the second electrode 104 regardless of the thickness of the second electrode 104. [

The thickness of the light emitting layer, the thickness of the organic layer, and the number of the organic layers constituting the first light emitting portion 110, the second light emitting portion 120, and the third light emitting portion 130, The first light emitting portion 110, the second light emitting portion 120, and the third light emitting portion 130 according to an embodiment of the present invention. Therefore, the present invention is not limited thereto, and it is possible to arrange them selectively according to the configuration and characteristics of the device.

The structure shown in FIG. 2 shows an example of the present invention. The structure shown in FIG. 2 can be selectively formed according to the structure and characteristics of the organic light emitting device, but is not limited thereto.

3 is a view illustrating a light emitting position of the organic light emitting diode according to the first embodiment of the present invention.

3, the abscissa represents the wavelength region of light, and the ordinate represents the emission position of the light emitting layers constituting the light emitting portion from the second electrode 104, which may be referred to as a contour map. Here, except for the first electrode 102 and the second electrode 104, the emission positions of the light emitting layers in the emission peak at the application of the EPEL structure of the present invention are shown. The light emitting regions of the light emitting layers have the maximum light emitting range. In FIG. 3, the total organic layers except for the first electrode 102 and the second electrode 104 have a thickness of 4,200 .ANG. The thickness of the whole organic layers does not limit the content of the present invention.

Since the third emission layer (EML) 134 of the third emission layer 130 is a blue emission layer, the peak wavelength range of the emission region of the third emission layer (EML) May range from 440 nm to 480 nm. The maximum efficiency can be obtained by emitting light in the white region of the contour map at 460 nm which is the maximum wavelength (B-Max) of the blue light emitting layer.

Therefore, the emission position 134E of the third emission layer (EML) 134 is set in the range of 200 ANGSTROM to 800 ANGSTROM from the second electrode 104 so that the emission peak of the emission layer (EML) ) 134E is located at 460 nm which is the maximum wavelength (B-Max). Therefore, the third emission layer (EML) 134 emits light at a maximum wavelength (B-Max) of 460 nm, thereby achieving maximum efficiency. 3, the emission position of the third emission layer (EML) 134 is shown as 3,400 to 4,000 ANGSTROM, which is a value obtained by subtracting 3,400 ANGSTROM to 4,000 ANGSTROM at a total thickness of 4,200 ANGSTROM . Therefore, the emission position of the third emission layer (EML) 134 may be in the range of 200 Å to 800 Å. The same can be applied to the emission position of the second emission layer (EML) 124 and the emission position of the first emission layer (EML) 114.

A blue light emitting layer and a yellow light emitting layer or a blue light emitting layer and a red light emitting layer or a blue light emitting layer and a green light emitting layer are formed as the third light emitting layer (EML) (EML) 134, the peak wavelength range of the emission region of the third emission layer (EML) 134 may range from 440 nm to 650 nm. The blue light emitting layer may include one of a blue light emitting layer, a deep blue light emitting layer, and a sky blue light emitting layer.

Since the second light emitting layer (EML) 124 constituting the second light emitting portion 120 is a yellow-green light emitting layer, the peak wavelength of the light emitting region of the second light emitting layer (EML) peak wavelength range may range from 510 nm to 580 nm. The maximum efficiency can be achieved by emitting light in the white region of the contour map at the maximum wavelength (YG-Max) of the yellow-green light emitting layer at 560 nm.

Therefore, the light emission position of the second light emitting layer (EML) 124 from the second electrode 104 is set in the range of 1,800 Å to 2,550 Å, and the emission peak of the second light emitting layer (EML) (124E) is located at a maximum wavelength (YG-Max) of 560 nm. Therefore, the second light emitting layer (EML) 124 emits light at a maximum wavelength (YG-Max) of 560 nm, thereby achieving maximum efficiency.

The second light emitting layer (EML) 124 of the second light emitting portion 120 may include two layers of a yellow light emitting layer and a red light emitting layer depending on the characteristics and structure of the device. The peak wavelength of the light emitting region of the yellow light emitting layer may be in the range of 540 nm to 580 nm. The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. Therefore, in this case, it is necessary to emit light at 540 nm to 650 nm, which is the light emitting region of the second light emitting layer (EML) 124, so that maximum efficiency can be obtained in the white region of the contour map.

The second light emitting layer (EML) 124 of the second light emitting portion 120 may be composed of two layers, a red light emitting layer and a green light emitting layer, depending on the characteristics and structure of the device. The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. The peak wavelength of the luminescent region of the green light emitting layer may be in the range of 510 nm to 560 nm. Therefore, in this case, it is necessary to emit light at 510 nm to 650 nm, which is the light emitting region of the second light emitting layer (EML) 124, so that maximum efficiency can be obtained in the white region of the contour map.

The second light emitting layer (EML) 124 of the second light emitting portion 120 may include two layers of a red light emitting layer and a yellow-green light emitting layer depending on the characteristics and structure of the device. can do. The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. The peak wavelength of the light emitting region of the yellow-green light emitting layer may be in the range of 510 nm to 580 nm. Therefore, in this case, it is necessary to emit light at 510 nm to 650 nm, which is the light emitting region of the second light emitting layer (EML) 124, so that maximum efficiency can be obtained in the white region of the contour map.

Accordingly, a yellow-green light-emitting layer, a yellow light-emitting layer and a red light-emitting layer, a red light-emitting layer and a green light-emitting layer, or a light- A peak wavelength range of the luminescent region of the second emission layer (EML) 124 is 510 (nm), and a peak wavelength of the luminescent layer of the second emission layer (EML) Nm to 650 nm. In this case, it is necessary to emit light at 510 nm to 650 nm, which is the light emitting region of the second light emitting layer (EML) 124, so that the maximum efficiency can be obtained in the white region of the contour map.

The first light emitting layer (EML) 114 constituting the first light emitting portion 110 is a blue light emitting layer and therefore the peak wavelength range of the light emitting region of the first light emitting layer (EML) May range from 440 nm to 480 nm. The maximum efficiency can be obtained by emitting light in the white region of the contour map at the maximum wavelength (B-Max) of the blue light emitting layer at 460 nm.

Therefore, the emission position of the first emission layer (EML) 114 from the second electrode 104 is set in the range of 2,650 Å to 3,300 Å, so that the emission peak 114E has the maximum wavelength B-Max ) At 460 nm. Accordingly, the first light emitting layer (EML) 114 emits light at a maximum wavelength (B-Max) of 460 nm, thereby achieving maximum efficiency.

A blue light emitting layer and a yellow light emitting layer or a blue light emitting layer and a red light emitting layer or a blue light emitting layer and a green light emitting layer are formed as the first light emitting layer (EML) (EML) 114, the peak wavelength range of the emission region may be in the range of 440 nm to 650 nm. The blue light emitting layer may include one of a blue light emitting layer, a deep blue light emitting layer, and a sky blue light emitting layer. Therefore, in this case, it is necessary to emit light at 440 to 650 nm, which is the light emitting region of the first light emitting layer (EML) 114, so that the maximum efficiency can be obtained in the white region of the contour map.

As described above, the position of the emission peak changes according to the emission position of the emission layer. Therefore, the present invention applies an EPEL (Emission Position of Emitting Layers) structure in which the emission peak of the emission layer has a maximum emission range in a desired emission region by setting the emission position of the emission layer constituting the emission portion.

In other words, by applying an emission position of emission (EPEL) structure to the light emitting layer, the emission peak is located at a specific wavelength, so that the light emitting layers can achieve the maximum efficiency in light corresponding to a specific wavelength .

A maximum emission range of the light emitting layers in the emission region having the specific wavelength can be referred to as a maximum emission range. That is, the peak wavelength may be a luminescent region.

Therefore, the maximum emission range of the first emission layer is 440 nm to 470 nm, the maximum emission range of the second emission layer is 530 nm to 570 nm, and the maximum emission range of the third emission layer may be 440 nm to 470 nm.

That is, in order to emit light at 440 nm to 470 nm, which is the maximum emission range of the blue emission layer, and 530 nm to 570 nm, which is the maximum emission range of the yellow-green emission layer, The maximum efficiency can be achieved in the white area. It can be seen that the light emitting layer can achieve the maximum efficiency by setting the light emitting position of the light emitting layer of the present invention to correspond to the light emitting region. The EPEL structure of the present invention is characterized in that the number of the first organic layers, the thickness of the first organic layers, the number of the second organic layers, the thickness of the second organic layers, the number of the third organic layers, The thickness of the fourth organic layer, the thickness of the fourth organic layer, the number of the first light emitting layer, the thickness of the first light emitting layer, the number of the second light emitting layer, the thickness of the second light emitting layer, The first light emitting layer, the second light emitting layer, and the third light emitting layer have a maximum light emitting range regardless of the thickness of the third light emitting layer, so that the light emitting layer can achieve the maximum efficiency. 4 is a diagram showing an EL spectrum according to a comparative example and a first embodiment of the present invention.

That is, the emission intensity of the lower emission type structure in which the blue emission layer and the yellow-green emission layer are stacked is shown as a case of applying the EPEL (Emission Position of Emitting Layers) structure of the present invention and a comparative example will be.

In FIG. 4, the abscissa represents the wavelength region of light, and the ordinate represents the intensity of light. The emission intensity is a relative value based on the maximum value of the EL spectrum.

In FIG. 4, the embodiment (minimum position) is a portion set to the minimum position when the light emitting positions of the light emitting layers are set. For example, when the emission position L1 of the third emission layer (EML) 134 is 200 to 800 angstroms from the second electrode 104, the minimum position is set to 200 angstroms.

The embodiment (maximum position) is a portion set to the maximum position when the light emitting positions of the light emitting layers are set. For example, when the emission position L1 of the third emission layer (EML) 134 is in the range of 200 to 800 angstroms from the second electrode 104, the maximum position is set to 800 angstroms.

The embodiment (optimum position) is a portion set to the light emitting position of the first embodiment of the present invention. For example, when the emission position L1 of the third emission layer (EML) 134 is in the range of 200 to 800 angstroms from the second electrode 104, the emission position of the embodiment is set in the range of 200 to 800 angstroms .

As shown in FIG. 4, when the minimum position of the emission position is deviated from the optimum position in the EPEL (Emission Position of Emitting Layers) structure of the present invention, it is as follows. The emission intensity decreases at 440 nm to 480 nm, which is the peak wavelength range of blue light. It can be seen that the luminescence intensity decreases in the range of 510 nm to 580 nm, which is the peak wavelength range of the yellow-green light. It can be seen that the luminescence intensity is remarkably decreased at 600 nm to 650 nm, which is the peak wavelength range of red light.

In the EPEL (Emission Position of Emitting Layers) structure of the present invention, when the maximum position of the emission position is deviated, the optimum position is as follows. It can be seen that the luminescence intensity decreases at 440 nm to 480 nm, which is the peak wavelength range of blue light, and is out of the peak wavelength range of blue light. Therefore, the blue light emission efficiency is reduced. It can be seen that the luminescence intensity decreases in the range of 510 nm to 580 nm, which is the peak wavelength range of the yellow-green light.

Accordingly, it can be seen that the emission intensity increases in the peak wavelength range of blue light when the optimum position of the present invention is set, compared with the case where the minimum or maximum position of the embodiment is set. Further, it can be seen that the emission intensity increases in the peak wavelength range of yellow-green light when the optical position is set to the optimum position of the present invention, as compared with the case of setting the minimum position or the maximum position of the embodiment. In addition, it can be seen that the emission intensity increases in the peak wavelength range of red light when the optimum position of the present invention is set, compared with the case where the minimum or maximum position of the embodiment is set.

The efficiency of the white organic light emitting device using the EPEL (Emission Position of Emitting Layers) structure of the present invention is shown in Table 1 below. And the efficiency of the comparative example is 100%, the efficiency of the first embodiment of the present invention is shown.

The comparative example in Table 1 below is a white organic light emitting device of a bottom emission type having a structure in which a blue light emitting layer and a yellow-green light emitting layer are laminated. The embodiment is a white organic light emitting device of the lower emission type when the optimum position of the EPEL (Emission Position of Emitting Layers) structure of the present invention is applied.

As shown in Table 1, when the efficiency of the comparative example is 100% when the EPEL (Emission Position of Emitting Layers) structure of the present invention is compared to the comparative example, the green efficiency is increased by about 25% Able to know. The blue efficiency increased by 47% and the white efficiency rose by 19%. The average efficiency was increased by about 20% as compared with the comparative example.

The panel efficiency of the white organic light emitting device and the comparative example using the EPEL (Emission Position of Emitting Layers) structure of the present invention are as shown in Table 2 below.

Table 2 below shows the efficiencies of the embodiment (minimum position) and the embodiment (maximum position) when the efficiency of the embodiment (optimum position) is taken as 100%.

The panel efficiency was measured when the driving current density was 10 mA / cm ² . When the panel efficiency of the embodiment is 100%, the panel efficiency of the embodiment (minimum position) and the embodiment (maximum position) are measured.

As shown in Table 2, the efficiency of red, green, blue and white is reduced at the boundary between the embodiment (minimum position) and the embodiment (maximum position) have. It can be seen that the efficiencies of Red, Green, Blue and White are further reduced in the embodiment (minimum position) than in the embodiment (maximum position). Therefore, it can be seen that the panel efficiency decreases when the emission position of the EPEL structure of the present invention deviates from the optimum position.

As described in the first embodiment of the present invention, the organic light emitting device may be an organic light emitting device of a bottom emission type.

The position of the first electrode may be set in the range of 4,500 to 6,000 angstroms from the second electrode.

The light emitting position of the third light emitting layer can be set in the range of 200 Å to 800 Å from the second electrode.

The light emitting position of the second light emitting layer can be set in the range of 1,800 to 2,550 angstroms from the second electrode.

The light emitting position of the first light emitting layer may be set in the range of 2,650 Å to 3,300 Å from the second electrode.

The first light emitting layer may include a blue light emitting layer, a blue light emitting layer and a yellow-green light emitting layer, or a blue light emitting layer and a red light emitting layer, or a blue light emitting layer and a green light emitting layer, or a combination thereof.

The second light emitting layer may include a yellow-green light emitting layer, or a yellow light emitting layer and a red light emitting layer, or a red light emitting layer and a green light emitting layer, or a yellow-green light emitting layer and a red light emitting layer, or a combination thereof.

The third light emitting layer may be a blue light emitting layer, or a blue light emitting layer and a yellow-green light emitting layer, or a blue light emitting layer and a red light emitting layer, or a blue light emitting layer and a green light emitting layer, or a combination thereof.

The light emitting region of the first light emitting layer may range from 440 nm to 650 nm, the light emitting region of the second light emitting layer may range from 510 nm to 650 nm, and the light emitting region of the third light emitting layer may range from 440 nm to 650 nm.

The maximum emission range of the first emission layer is in the range of 440 nm to 470 nm, the maximum emission range of the second emission layer is in the range of 530 nm to 570 nm, and the maximum emission range of the third emission layer is in the range of 440 nm to 470 nm .

As described above, it can be seen that the emission intensity of the light emitting layer can be increased when the EPEL (Emission Position of Emitting Layers) structure of the present invention is applied. Also, it can be seen that the panel efficiency is improved because the emission intensity is increased.

5 is a view illustrating a white organic light emitting device according to a second embodiment of the present invention.

The white organic light emitting device 100 shown in FIG. 5 includes a first light emitting portion 110 and a second light emitting portion 120 between first and second electrodes 102 and 104 and first and second electrodes 102 and 104, And a third light emitting unit 130. Hereinafter, the description of the same or corresponding elements to those of the previous embodiment will be omitted in the following description of the present embodiment. The position of the first electrode 102 is preferably 4,500 to 6,000 Å. The emission peaks of the light emitting layers constituting the first, second and third light emitting units 110, 130 are positioned at a specific wavelength, The efficiency of the light emitting layers can be improved. The first light emitting portion 110, the second light emitting portion 120, and the third light emitting portion 130 are formed in the light emitting region of the first light emitting layer, the second light emitting layer, (Emission Position of Emitting Layers) structure.

The third light emitting unit 130 includes a third electron transport layer (ETL) 136, a third emission layer (EML) 134, and a third hole transport layer (HTL) 132 under the second electrode 104 .

Although not shown in the drawing, an electron injection layer (EIL) may be further formed on the third electron transport layer (ETL) 136. The electron injection layer (EIL) injects electrons from the second electrode (104) into the third electron transport layer (ETL) (136).

A hole injection layer (HIL) may be further formed under the third hole transport layer (HTL) 132.

A hole blocking layer (HBL) may further be formed on the third emission layer (EML). The third electron transport layer (ETL) 136 and the hole blocking layer HBL may be formed as one layer.

An electron blocking layer (EBL) may be further formed under the third emission layer (EML) 134. The third hole transport layer (HTL) 132 and the electron blocking layer EBL may be formed as one layer.

The third emission layer (EML) 134 may include a blue emission layer or a blue emission layer including an auxiliary emission layer capable of emitting different colors. The blue light emitting layer may include one of a blue light emitting layer, a deep blue light emitting layer, and a sky blue light emitting layer.

The auxiliary light-emitting layer may be formed of one of a yellow-green light-emitting layer, a red light-emitting layer, and a green light-emitting layer, or a combination thereof. When the auxiliary light-emitting layer is further formed, the emission efficiency of the green light-emitting layer and the red light-emitting layer can be further improved. When forming the third light emitting layer (EML) 134 including the auxiliary light emitting layer, the yellow-green light emitting layer, the red light emitting layer, or the green light emitting layer is formed in the third light emitting layer (EML) It is also possible to arrange it on the upper side or the lower side.

Further, a yellow-green or red light-emitting layer or a green light-emitting layer may be formed on the lower and upper portions of the third light-emitting layer (EML) 134 as the auxiliary light- have. The position and the number of the light emitting layer can be selectively arranged depending on the configuration and characteristics of the device, and the present invention is not limited thereto.

When the auxiliary emission layer is formed in the third emission layer (EML) 134, the peak wavelength of the emission region of the third emission layer (EML) 134 may be in the range of 440 nm to 650 nm. have. Here, the peak wavelength may be a light emitting region.

All layers such as the third electron transport layer (ETL) 136, the third emission layer (EML) 134, the electron injection layer (EIL), and the hole blocking layer (HBL) may be referred to as an organic layer. All organic layers between the second electrode 104 and the third emission layer (EML) 134 and the third emission layer (EML) 134 may be referred to as an organic layer. Accordingly, all of the organic layers between the second electrode 104 and the third emission layer (EML) 134 may be referred to as a fourth organic layer.

Irrespective of the number or thickness of the third electron transport layer (ETL) 136 or irrespective of the number or thickness of the third emission layer (EML) 134 or the number or thickness of the electron injection layer (EIL) Regardless of the number or thickness of the hole blocking layer HBL or the number or thickness of all the organic layers between the second electrode 104 and the third emission layer (EML) 134, ) 134 is positioned within a range of 300 to 700 angstroms from the second electrode 104. In addition, Alternatively, the emission position L1 of the third emission layer (EML) 134 is set to be within a range of 300 ANGSTROM to 700 ANGSTROM from the reflective surface of the second electrode 104. (EML) 134 of the third light emitting layer (EML) 134 regardless of the number of the at least one fourth organic layer, the thickness of the fourth organic layer, the number of the third light emitting layers, May be set within the range of 300 to 700 angstroms from the second electrode 104. (EML) 134 of the third light emitting layer (EML) 134 regardless of the number of the at least one fourth organic layer, the thickness of the fourth organic layer, the number of the third light emitting layer, May be set to be within a range of 300 ANGSTROM to 700 ANGSTROM from the reflective surface of the second electrode 104.

The second light emitting unit 120 may include a second hole transport layer (HTL) 122, a second emission layer (EML) 124, and a second electron transport layer (ETL) 126.

A hole injection layer (HIL) may be further formed under the second hole transport layer (HTL) 122.

A hole blocking layer (HBL) may further be formed on the second emission layer (EML) 124. The second electron transport layer (ETL) 126 and the hole blocking layer HBL may be formed as one layer.

An electron blocking layer (EBL) may be further formed under the second emission layer (EML) 124. The second hole transport layer (HTL) 122 and the electron blocking layer EBL may be formed as one layer.

The second light emitting layer (EML) 124 may include a yellow-green light emitting layer or a yellow light emitting layer and a red light emitting layer or a red light emitting layer and a green light emitting layer, A green (Yellow-Green) light-emitting layer, and a red (Red) light-emitting layer, or a combination thereof. When a red light-emitting layer is further formed in the yellow-green light-emitting layer, the efficiency of the red light-emitting layer can be further improved. The red light-emitting layer may be formed above or below the yellow-green light-emitting layer. The yellow light-emitting layer and the red light-emitting layer, or the red light-emitting layer and the green light-emitting layer, or the yellow-green light-emitting layer and the red light- (EML) 124. In this case, The yellow light-emitting layer and the red light-emitting layer, or the red light-emitting layer and the green light-emitting layer, or the yellow-green light-emitting layer and the red light- EML) 124, or may be configured differently.

The peak wavelength of the light emitting region of the yellow light emitting layer may be in the range of 540 nm to 580 nm. The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. Therefore, the peak wavelength of the light emitting region of the yellow light emitting layer and the red light emitting layer of the second light emitting layer (EML) 124 may be in the range of 540 nm to 650 nm. Here, the peak wavelength may be a light emitting region. The light emitting efficiency of the red light emitting layer can be increased when the light emitting layer is composed of two layers of the yellow light emitting layer and the red light emitting layer.

The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. The peak wavelength of the luminescent region of the green light emitting layer may be in the range of 510 nm to 560 nm. Therefore, the peak wavelength of the emission regions of the red and green emission layers of the second emission layer (EML) 124 may be in the range of 510 nm to 650 nm. Here, the peak wavelength may be a light emitting region. When the red light emitting layer and the green light emitting layer are formed of two layers, the color reproducibility can be improved.

The peak wavelength of the light emitting region of the yellow light emitting layer may be in the range of 540 nm to 580 nm. The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. Therefore, the peak wavelength of the light emitting region of the yellow light emitting layer and the red light emitting layer of the second light emitting layer (EML) 124 may be in the range of 540 nm to 650 nm. Here, the peak wavelength may be a light emitting region. The light emitting efficiency of the red light emitting layer can be increased when the light emitting layer is composed of two layers of the yellow light emitting layer and the red light emitting layer.

The second light emitting layer (EML) 124 of the second light emitting portion 120 may include two layers of a red light emitting layer and a yellow-green light emitting layer depending on the characteristics and structure of the device. can do. The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. The peak wavelength of the light emitting region of the yellow-green light emitting layer may be in the range of 510 nm to 580 nm. Emitting layer of the second light-emitting layer (EML) 124 and the yellow-green light-emitting layer, the light-emitting efficiency of the red light-emitting layer can be increased. In this case, the peak wavelength of the emission region of the second emission layer (EML) 224 may be in the range of 510 nm to 650 nm. Here, the peak wavelength may be a light emitting region.

The second light emitting layer (EML) 124 may be a yellow-green light emitting layer or a yellow light emitting layer and a red light emitting layer or a red light emitting layer and a green light emitting layer, A peak wavelength of the luminescent region of the second emission layer (EML) 124 is 510 nm to 650 nm, and the emission wavelength of the second emission layer (EML) Nm. ≪ / RTI > Here, the peak wavelength may be a light emitting region.

A second charge generating layer (CGL) 150 may be further formed between the second light emitting portion 120 and the third light emitting portion 130. The second charge generation layer (CGL) 150 may include an N-type charge generation layer (N-CGL) and a P-type charge generation layer (P-CGL).

The second light emitting layer (EML) 124, the second electron transport layer (ETL) 126, the second charge generation layer (CGL) 150, the third hole transport layer (HTL) All layers such as a layer (HBL), an electron blocking layer (EBL), and a hole injection layer (HIL) can be referred to as an organic layer. All organic layers between the third emission layer (EML) 134 and the second emission layer (EML) 124 and the second emission layer (EML) 124 may be referred to as an organic layer. Therefore, all of the organic layers between the third emission layer (EML) 134 and the second emission layer (EML) 124 may be referred to as a third organic layer.

(ETL) 126, regardless of the number or thickness of the third hole transporting layer (HTL) 132 or the number or thickness of the second charge generating layer (CGL) 150, Irrespective of the number and thickness of the hole injection layer (HIL), or regardless of the number or thickness of the hole blocking layer (HBL) or the number or thickness of the electron blocking layer (EBL) (EML) 134, regardless of the number or thickness of the second light emitting layer (EML) 124 or the number or thickness of the third light emitting layer (EML) 134, or between the second electrode 104 and the third light emitting layer Regardless of the number or thickness of all the organic layers between the third light emitting layer (EML) 134 and the second light emitting layer (EML) 124, The emission position L2 of the second emission layer (EML) 124 is set to be within a range of 1,900 Å to 2,400 Å from the second electrode 104 The. Alternatively, the emission position L2 of the second emission layer (EML) 124 is set to be within a range of 1,900 Å to 2,400 Å from the reflective surface of the second electrode 104.

Therefore, the number of the at least one fourth organic layer, the thickness of the fourth organic layer, the number of the third organic layers, the thickness of the third organic layer, the number of the third light emitting layers, the thickness of the third light emitting layer, The light emitting position L2 of the second emission layer (EML) 124 can be set to be within a range of 1,900 Å to 2,400 Å from the second electrode 104 regardless of the number of the light emitting layers and the thickness of the second light emitting layer have. Or the number of the at least one fourth organic layer, the thickness of the fourth organic layer, the number of the third organic layers, the thickness of the third organic layer, the number of the third light emitting layers, the thickness of the third light emitting layer, The emission position L2 of the second emission layer (EML) 124 is positioned within a range of 1,900 to 2,400 angles from the reflective surface of the second electrode 104 regardless of the number of the emission layers and the thickness of the second emission layer .

The first light emitting part 110 includes a first hole transport layer (HTL) 112, a first light emitting layer (EML) 114, and a first electron transport layer (ETL) 116 on the first electrode 102 .

Although not shown in the drawing, a hole injection layer (HIL) can be additionally formed. The hole injection layer HIL is disposed on the first electrode 102 and functions to smoothly inject holes from the first electrode 102. A hole blocking layer (HBL) may be further formed on the first electron transport layer (ETL) 116. The first electron transport layer (ETL) 116 and the hole blocking layer HBL may be formed as one layer.

A hole blocking layer (HBL) may further be formed on the first emission layer (EML) 114. The first electron transport layer (ETL) 116 and the hole blocking layer HBL may be formed as one layer.

An electron blocking layer (EBL) may be further formed under the first emission layer (EML) 114. The first hole transport layer (HTL) 112 and the electron blocking layer (EBL) may be formed as a single layer.

The first light emitting layer (EML) 114 is composed of a blue light emitting layer or a blue light emitting layer including an auxiliary light emitting layer capable of emitting different colors. The blue light emitting layer may include one of a blue light emitting layer, a deep blue light emitting layer, and a sky blue light emitting layer.

The auxiliary light-emitting layer may be formed of one of a yellow-green light-emitting layer or a red light-emitting layer, or a combination thereof. When the auxiliary light-emitting layer is further formed, the emission efficiency of the green light-emitting layer and the red light-emitting layer can be further improved. When forming the first light emitting layer (EML) 114 including the auxiliary light emitting layer, the yellow-green light emitting layer or the red light emitting layer or the green light emitting layer is formed in the first light emitting layer (EML) 114 on the upper side or the lower side. A yellow-green light-emitting layer or a red light-emitting layer or a green light-emitting layer may be formed on the lower and upper portions of the first light-emitting layer (EML) 114 as the auxiliary light- . The position and the number of the light emitting layer can be selectively arranged depending on the configuration and characteristics of the device, and the present invention is not limited thereto.

When the auxiliary light emitting layer is formed in the first light emitting layer (EML) 114, the peak wavelength of the light emitting region of the first light emitting layer (EML) 114 may be in the range of 440 nm to 650 nm. have. Here, the peak wavelength may be a light emitting region.

A first charge generating layer (CGL) 140 may be further formed between the first light emitting portion 110 and the second light emitting portion 120. The first charge generation layer (CGL) 140 may include an N-type charge generation layer and a P-type charge generation layer.

(ETL) 114, the first electron transport layer (ETL) 116, the first charge generation layer (CGL) 140, the second hole transport layer (HTL) 122, All layers such as a layer HBL, an electron blocking layer EBL, and a hole injection layer HIL can be referred to as an organic layer. All the organic layers between the second emission layer (EML) 124 and the first emission layer (EML) 114 and the first emission layer (EML) 114 may be referred to as an organic layer. Accordingly, all the organic layers between the second emission layer (EML) 124 and the first emission layer (EML) 114 may be referred to as a second organic layer.

(EBL), regardless of the number or thickness of the second hole transporting layer (HTL) 122 or the number or thickness of the first charge generating layer (CGL) 140 or the thickness or thickness of the electron blocking layer Irrespective of the number and thickness of the first electron transport layer (ETL) 116, or the thickness of the first electron transport layer (ETL) 116, irrespective of the number or thickness of the hole injection layer (HIL) (EML) 114 regardless of the number or thickness of the first light emitting layer (EML) 114 or the number or thickness of the second light emitting layer (EML) 124 or the number or thickness of the third light emitting layer (EML) 134 and the second light emitting layer (EML) 134, regardless of the number or thickness of all organic layers between the second electrode 104 and the third light emitting layer (EML) 124 and between the second emission layer (EML) 124 and the first emission layer (EML) 114, regardless of the number or thickness of all the organic layers between the emission layer The emission position L3 of the first emission layer (EML) 114 is set to be within a range of 2,800 ANGSTROM to 3,200 ANGSTROM from the second electrode 104 regardless of the number and thickness of all the organic layers. Alternatively, the emission position L3 of the first emission layer (EML) 114 is set to be within the range of 2,800 ANGSTROM to 3,200 ANGSTROM from the reflective surface of the second electrode 104. [

Therefore, the number of the at least one fourth organic layer, the thickness of the fourth organic layer, the number of the third organic layers, the thickness of the third organic layer, the number of the second organic layers, the thickness of the second organic layer, Regardless of the number of the light emitting layers, the thickness of the third light emitting layer, the number of the second light emitting layers, the thickness of the second light emitting layer, the number of the first light emitting layers, and the thickness of the first light emitting layer, May be set to be within a range of 2,800 ANGSTROM to 3,200 ANGSTROM from the second electrode 104. [ Or the number of the at least one fourth organic layer, the thickness of the fourth organic layer, the number of the third organic layers, the thickness of the third organic layer, the number of the second organic layers, the thickness of the second organic layer, Regardless of the number of the light emitting layers, the thickness of the third light emitting layer, the number of the second light emitting layers, the thickness of the second light emitting layer, the number of the first light emitting layers, and the thickness of the first light emitting layer, Can be set to be within a range of 2,800 angstroms to 3,200 angstroms from the reflective surface of the second electrode 104. [

The first hole transport layer (HTL) 112, the electron blocking layer (EBL), the hole injection layer (HIL), etc. between the first emission layer (EML) 114 and the substrate 101 are referred to as an organic layer can do. Therefore, all the layers, including the first electrode 102, between the first emission layer (EML) 114 and the substrate 101 can be referred to as an organic layer, and the first emission layer (EML) And the first electrode 102 may be referred to as a first organic layer.

Regardless of the number or thickness of the hole injection layer (HIL) or the number or thickness of the electron blocking layer (EBL), or the thickness of the first hole transport layer (HTL) Regardless of the number or thickness of the electrodes 102 or the number or thickness of the first light emitting layer (EML) 114 or the number or thickness of the second light emitting layer (EML) 124, Irrespective of the number and thickness of all the organic layers between the second electrode 104 and the third emission layer (EML) 134, or the number of the organic layers between the second electrode 104 and the third emission layer (EML) (EML) 124 and the first light emitting layer (EML) 124, regardless of the number or thickness of all the organic layers between the light emitting layer (EML) 134 and the second light emitting layer (EML) 114 or between the first emission layer (EML) 114 and the substrate 101, regardless of the number or thickness of all the organic layers between the first emission layer (EML) 114 and the substrate 101 Regardless of the thickness or the position (L0) of the first electrode 102 may be set so as to be positioned in the range of 4,500Å to 6,000Å from the second electrode (104). Alternatively, the position (L0) of the first electrode 102 may be set within a range of 4,500 to 6,000 angstroms from the reflective surface of the second electrode 104. [

Therefore, the number of the at least one fourth organic layer, the thickness of the fourth organic layer, the number of the third organic layers, the thickness of the third organic layer, the number of the second organic layers, the thickness of the second organic layer, The thickness of the third light emitting layer, the thickness of the second light emitting layer, the thickness of the second light emitting layer, the thickness of the first light emitting layer, the number of the first organic layer, The position L0 of the first electrode 102 can be set to be within a range of 4,500 to 6,000 angstroms from the second electrode 104 regardless of the thickness of the first electrode 102. [ Or the number of the at least one fourth organic layer, the thickness of the fourth organic layer, the number of the third organic layers, the thickness of the third organic layer, the number of the second organic layers, the thickness of the second organic layer, The thickness of the third light emitting layer, the thickness of the second light emitting layer, the thickness of the second light emitting layer, the thickness of the first light emitting layer, the number of the first organic layer, The position L0 of the first electrode 102 can be set to be within a range of 4,500 to 6,000 angstroms from the reflective surface of the second electrode 104 regardless of the thickness of the second electrode 104. [

The structure shown in FIG. 5 shows an example of the present invention and can be selectively formed according to the structure and characteristics of the organic light emitting device, but is not limited thereto.

6 is a view illustrating a light emitting position of an organic light emitting diode according to a second embodiment of the present invention.

That is, in FIG. 6, the abscissa represents a wavelength region of light, and the ordinate represents a light emitting position of the light emitting layers constituting the light emitting portion from the second electrode 104, which may be referred to as a contour map. Here, except for the first electrode 102 and the second electrode 104, the emission positions of the light emitting layers in the emission peak at the application of the EPEL structure of the present invention are shown. The light emitting regions of the light emitting layers have the maximum light emitting range. 6, the total organic layers except for the first electrode 102 and the second electrode 104 have a thickness of 4,200 angstroms. The thickness of the whole organic layers does not limit the content of the present invention.

Since the third emission layer (EML) 134 of the third emission layer 130 is a blue emission layer, the peak wavelength range of the emission region of the third emission layer (EML) May range from 440 nm to 480 nm. The maximum efficiency can be obtained by emitting light in the white region of the contour map at 460 nm which is the maximum wavelength (B-Max) of the blue light emitting layer.

Therefore, the emission position of the third emission layer (EML) 134 is set in the range of 300 ANGSTROM to 700 ANGSTROM so that the emission peak 134E of the third emission layer (EML) 134 has the maximum wavelength B- ) At 460 nm. As a result, the third light emitting layer (EML) 134 emits light at a maximum wavelength (B-Max) of 460 nm, thereby achieving maximum efficiency. In FIG. 6, the emission position 134E of the third emission layer (EML) 134 is shown as 3,500 A to 3,900 A, which is a value obtained by subtracting 3,500 A to 3,900 A at 4,200 A, which is the thickness of all the organic layers. Therefore, the emission position of the third emission layer (EML) 134 may be in the range of 200 Å to 800 Å. The same can be applied to the emission position of the second emission layer (EML) 124 and the emission position of the first emission layer (EML) 114.

A blue light emitting layer and a yellow light emitting layer or a blue light emitting layer and a red light emitting layer or a blue light emitting layer and a green light emitting layer are formed as the third light emitting layer (EML) (EML) 134, the peak wavelength range of the emission region of the third emission layer (EML) 134 may range from 440 nm to 650 nm. The blue light emitting layer may include one of a blue light emitting layer, a deep blue light emitting layer, and a sky blue light emitting layer.

Since the second light emitting layer (EML) 124 constituting the second light emitting portion 120 is a yellow-green light emitting layer, the peak wavelength of the light emitting region of the second light emitting layer (EML) peak wavelength range may range from 510 nm to 580 nm. The maximum efficiency can be achieved by emitting light in the white region of the contour map at the maximum wavelength (YG-Max) of the yellow-green light emitting layer at 560 nm.

An emission peak 124E corresponding to the emission region of the second emission layer (EML) 124 is set by setting the emission position of the second emission layer (EML) 124 in the range of 1,900A to 2,400A. Is located at a maximum wavelength (YG-Max) of 560 nm. Accordingly, the second light emitting layer (EML) 124 emits light at a maximum wavelength (YG-Max) of 560 nm, thereby achieving maximum efficiency.

The second light emitting layer (EML) 124 of the second light emitting portion 120 may include two layers of a yellow light emitting layer and a red light emitting layer depending on the characteristics and structure of the device. The peak wavelength of the light emitting region of the yellow light emitting layer may be in the range of 540 nm to 580 nm. The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. Therefore, in this case, it is necessary to emit light at 540 nm to 650 nm, which is the light emitting region of the second light emitting layer (EML) 124, so that maximum efficiency can be obtained in the white region of the contour map.

The second light emitting layer (EML) 124 of the second light emitting portion 120 may be composed of two layers, a red light emitting layer and a green light emitting layer, depending on the characteristics and structure of the device. The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. The peak wavelength of the luminescent region of the green light emitting layer may be in the range of 510 nm to 560 nm. Therefore, in this case, it is necessary to emit light at 510 nm to 650 nm, which is the light emitting region of the second light emitting layer (EML) 124, so that maximum efficiency can be obtained in the white region of the contour map.

The second light emitting layer (EML) 124 of the second light emitting portion 120 may include two layers of a red light emitting layer and a yellow-green light emitting layer depending on the characteristics and structure of the device. can do. The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. The peak wavelength of the light emitting region of the yellow-green light emitting layer may be in the range of 510 nm to 580 nm. Therefore, in this case, it is necessary to emit light at 510 nm to 650 nm, which is the light emitting region of the second light emitting layer (EML) 124, so that maximum efficiency can be obtained in the white region of the contour map.

Accordingly, a yellow-green light-emitting layer, a yellow light-emitting layer and a red light-emitting layer, a red light-emitting layer and a green light-emitting layer, or a light- A peak wavelength range of the luminescent region of the second emission layer (EML) 124 is 510 (nm), and a peak wavelength of the luminescent layer of the second emission layer (EML) Nm to 650 nm. In this case, it is necessary to emit light at 510 nm to 650 nm, which is the light emitting region of the second light emitting layer (EML) 124, so that the maximum efficiency can be obtained in the white region of the contour map.

The first light emitting layer (EML) 114 constituting the first light emitting portion 110 is a blue light emitting layer and therefore the peak wavelength range of the light emitting region of the first light emitting layer (EML) May range from 440 nm to 480 nm. The maximum efficiency can be obtained by emitting light in the white region of the contour map at the maximum wavelength (B-Max) of the blue light emitting layer at 460 nm.

Therefore, the emission position of the first emission layer (EML) 114 is set in the range of 2,800 ANGSTROM to 3,200 ANGSTROM so that the emission peak 114E is located at 460 nm which is the maximum wavelength B-Max . Therefore, the maximum efficiency can be obtained by causing the first emission layer (EML) 114 to emit light at a maximum wavelength (B-Max) of 460 nm.

A blue light emitting layer and a yellow light emitting layer or a blue light emitting layer and a red light emitting layer or a blue light emitting layer and a green light emitting layer are formed as the first light emitting layer (EML) (EML) 114, the peak wavelength range of the emission region may be in the range of 440 nm to 650 nm. The blue light emitting layer may include one of a blue light emitting layer, a deep blue light emitting layer, and a sky blue light emitting layer.

As described above, the position of the emission peak changes according to the emission position of the emission layer. Therefore, the present invention applies an EPEL (Emission Position of Emitting Layers) structure so that the emission peak of the emission layer is located in a desired emission region by setting the emission position of the emission layer constituting the emission portion.

In other words, by applying an EPEL (Emission Position of Emitting Layers) structure to the light emitting layer, the emission peak is located at a specific wavelength, so that the light emitting layers can achieve the maximum efficiency in light of a wavelength corresponding to a specific wavelength .

A maximum emission range of the light emitting layers in the emission region having the specific wavelength can be referred to as a maximum emission range. That is, the peak wavelength may be a luminescent region. Therefore, the maximum emission range of the first emission layer is 440 nm to 470 nm, the maximum emission range of the second emission layer is 530 nm to 570 nm, and the maximum emission range of the third emission layer may be 440 nm to 470 nm.

That is, in order to emit light at 440 nm to 470 nm, which is the maximum emission range of the blue emission layer, and 530 nm to 570 nm, which is the maximum emission range of the yellow-green emission layer, The maximum efficiency can be achieved in the white area. It can be seen that the light emitting layer can achieve the maximum efficiency by setting the light emitting position of the light emitting layer of the present invention to correspond to the light emitting region. The EPEL structure of the present invention is characterized in that the number of the first organic layers, the thickness of the first organic layers, the number of the second organic layers, the thickness of the second organic layers, the number of the third organic layers, The thickness of the fourth organic layer, the thickness of the fourth organic layer, the number of the first light emitting layer, the thickness of the first light emitting layer, the number of the second light emitting layer, the thickness of the second light emitting layer, The first light emitting layer, the second light emitting layer, and the third light emitting layer have a maximum light emitting range regardless of the thickness of the third light emitting layer, so that the light emitting layer can achieve the maximum efficiency.

7 is a diagram showing an EL spectrum according to a comparative example and a second embodiment of the present invention.

That is, the emission intensity of the lower emission type structure in which the blue emission layer and the yellow-green emission layer are stacked is shown as a case of applying the EPEL (Emission Position of Emitting Layers) structure of the present invention and a comparative example will be.

In FIG. 7, the horizontal axis represents the wavelength region of light, and the vertical axis represents the intensity of light. The emission intensity is a relative value based on the maximum value of the EL spectrum.

In FIG. 7, the embodiment (minimum position) is a portion set to the minimum position when the light emitting positions of the light emitting layers are set. For example, when the emission position L1 of the third emission layer (EML) 134 is in the range of 300 to 700 angstroms from the second electrode 104, the minimum position is set to 300 angstroms.

The embodiment (maximum position) is a portion set to the maximum position when the light emitting positions of the light emitting layers are set. For example, when the emission position L1 of the third emission layer (EML) 134 is in the range of 300 to 700 angstroms from the second electrode 104, the maximum position is set to 700 angstroms.

The embodiment (optimum position) is a portion set to the light emitting position of the first embodiment of the present invention. For example, when the emission position L1 of the third emission layer (EML) 134 is in the range of 300 to 700 angstroms from the second electrode 104, the emission position of the embodiment is set in the range of 300 to 700 angstroms .

As shown in FIG. 7, when the minimum position of the emission position is deviated from the optimum position in the EPEL (Emission Position of Emitting Layers) structure of the present invention, it is as follows. The emission intensity decreases at 440 nm to 480 nm, which is the peak wavelength range of blue light. It can be seen that the luminescence intensity decreases at 510 nm to 580 nm, which is the peak wavelength range of yellow-green light, and the peak wavelength range of yellow-green light is out of range. It can be seen that the luminescence intensity is remarkably decreased at 600 nm to 650 nm, which is the peak wavelength range of red light.

In the EPEL (Emission Position of Emitting Layers) structure of the present invention, when the maximum position of the emission position is deviated, the optimum position is as follows. The emission intensity decreases at 440 nm to 480 nm, which is the peak wavelength range of blue light. Therefore, the blue light emission efficiency is reduced. It can be seen that the luminescence intensity decreases at 510 nm to 580 nm, which is the peak wavelength range of yellow-green light, and the peak wavelength range of yellow-green light is out of range.

Accordingly, it can be seen that the emission intensity increases in the peak wavelength range of blue light when the optimum position of the present invention is set, compared with the case where the minimum or maximum position of the embodiment is set. Further, it can be seen that the emission intensity increases in the peak wavelength range of yellow-green light when the optical position is set to the optimum position of the present invention, as compared with the case of setting the minimum position or the maximum position of the embodiment. In addition, it can be seen that the emission intensity increases in the peak wavelength range of red light when the optimum position of the present invention is set, compared with the case where the minimum or maximum position of the embodiment is set.

The efficiency of the white organic light emitting device using the EPEL (Emission Position of Emitting Layers) structure of the present invention is shown in Table 3 below. And the efficiency of the comparative example is 100%, the efficiency of the second embodiment of the present invention is shown.

In Table 3 below, the comparative example is a white organic light emitting device of a bottom emission type having a structure in which a blue light emitting layer and a yellow-green light emitting layer are laminated. The embodiment is a white organic light emitting device of the lower emission type when the optimum position of the EPEL (Emission Position of Emitting Layers) structure of the present invention is applied.

As shown in Table 3, when the efficiency of the comparative example is 100% when the EPEL (Emission Position of Emitting Layers) structure of the present invention is compared with the comparative example, the green efficiency is increased by about 25% Able to know. The blue efficiency increased by 47% and the white efficiency rose by 19%. The average efficiency was increased by about 20% as compared with the comparative example.

Table 4 shows the panel efficiency of the white organic light emitting device to which the EPEL (Emission Position of Emitting Layers) structure of the present invention is applied and the comparative example.

Table 4 below shows the efficiencies of the embodiment (minimum position) and the embodiment (maximum position) when the efficiency of the embodiment (optimum position) is taken as 100%.

The panel efficiency was measured when the driving current density was 10 mA / cm ² . When the panel efficiency of the embodiment is 100%, the panel efficiency of the embodiment (minimum position) and the embodiment (maximum position) are measured.

As shown in Table 4, it can be seen that the efficiency of green, blue, and white is reduced at the boundary between the embodiment (minimum position) and the embodiment (maximum position). In Table 2 of the first embodiment of the present invention and Table 4 of the second embodiment of the present invention, it is seen that green (G), blue (Blue) are observed at the boundary between the embodiment (minimum position) ) And white efficiency are further improved. Therefore, according to the second embodiment of the present invention, it is possible to provide an organic light emitting display device with improved efficiency. It can be seen that the efficiencies of Red, Green, Blue and White are further reduced in the embodiment (minimum position) than in the embodiment (maximum position). Therefore, it can be seen that the panel efficiency decreases when the emission position of the EPEL structure of the present invention deviates from the optimum position.

As described in the second embodiment of the present invention, the organic light emitting device may be an organic light emitting device of a bottom emission type.

The position of the first electrode may be set in the range of 4,500 to 6,000 angstroms from the second electrode.

The light-emitting position of the third light-emitting layer may be set to a range of 300 Å to 700 Å from the second electrode.

The light emitting position of the second light emitting layer can be set in the range of 1,900 Å to 2,400 Å from the second electrode.

The light emitting position of the first light emitting layer may be set in the range of 2,800 ANGSTROM to 3,200 ANGSTROM from the second electrode.

The first light emitting layer may include a blue light emitting layer, a blue light emitting layer and a yellow-green light emitting layer, or a blue light emitting layer and a red light emitting layer, or a blue light emitting layer and a green light emitting layer, or a combination thereof.

The second light emitting layer may include a yellow-green light emitting layer, or a yellow light emitting layer and a red light emitting layer, or a red light emitting layer and a green light emitting layer, or a yellow-green light emitting layer and a red light emitting layer, or a combination thereof.

The third light emitting layer may be a blue light emitting layer, or a blue light emitting layer and a yellow-green light emitting layer, or a blue light emitting layer and a red light emitting layer, or a blue light emitting layer and a green light emitting layer, or a combination thereof.

The light emitting region of the first light emitting layer may range from 440 nm to 650 nm, the light emitting region of the second light emitting layer may range from 510 nm to 650 nm, and the light emitting region of the third light emitting layer may range from 440 nm to 650 nm.

The maximum emission range of the first emission layer is in the range of 440 nm to 470 nm, the maximum emission range of the second emission layer is in the range of 530 nm to 570 nm, and the maximum emission range of the third emission layer is in the range of 440 nm to 470 nm .

As described above, it can be seen that the emission intensity of the light emitting layer can be increased when the EPEL (Emission Position of Emitting Layers) structure of the present invention is applied. Further, it can be seen that the panel efficiency is improved because the emission intensity is increased.

8 is a view illustrating a white organic light emitting device according to a third embodiment of the present invention.

In this embodiment, the light emitting position of the light emitting layers is set from the first electrode, and the light emitting position can be set from the first electrode according to the device design.

The position of the second electrode 104 is set to be within a range of 4,500 to 6,000 angstroms from the first electrode 102. The emission peaks of the light emitting layers constituting the first, second and third light emitting units 110, 130 are positioned at a specific wavelength, The efficiency of the light emitting layers can be improved. The first light emitting portion, the second light emitting portion, and the third light emitting portion may include an Emission Position of Emitting Layers (EPEL) having a maximum light emitting range in the light emitting regions of the first light emitting layer, the second light emitting layer, Structure.

The first light emitting part 110 includes a first hole transport layer (HTL) 112, a first light emitting layer (EML) 114, and a first electron transport layer (ETL) 116 on the first electrode 102 .

Although not shown in the drawing, a hole injection layer (HIL) can be additionally formed. The hole injection layer HIL is disposed on the first electrode 102 and functions to smoothly inject holes from the first electrode 102. A hole blocking layer (HBL) may further be formed on the first emission layer (EML) 114. The first electron transport layer (ETL) 116 and the hole blocking layer HBL may be formed as one layer.

An electron blocking layer (EBL) may be further formed under the first emission layer (EML) 114. The first hole transport layer (HTL) 112 and the electron blocking layer (EBL) may be formed as a single layer.

The first light emitting layer (EML) 114 is composed of a blue light emitting layer or a blue light emitting layer including an auxiliary light emitting layer capable of emitting different colors. The blue light emitting layer may include one of a blue light emitting layer, a deep blue light emitting layer, and a sky blue light emitting layer.

The auxiliary light-emitting layer may be formed of one of a yellow-green light-emitting layer or a red light-emitting layer, or a combination thereof. When the auxiliary light-emitting layer is further formed, the emission efficiency of the green light-emitting layer and the red light-emitting layer can be further improved. When forming the first light emitting layer (EML) 114 including the auxiliary light emitting layer, the yellow-green light emitting layer or the red light emitting layer or the green light emitting layer is formed in the first light emitting layer (EML) 114 on the upper side or the lower side. A yellow-green light-emitting layer or a red light-emitting layer or a green light-emitting layer may be formed on the lower and upper portions of the first light-emitting layer (EML) 114 as the auxiliary light- . The position and the number of the light emitting layer can be selectively arranged depending on the configuration and characteristics of the device, and the present invention is not limited thereto.

When the auxiliary light emitting layer is formed in the first light emitting layer (EML) 114, the peak wavelength of the light emitting region of the first light emitting layer (EML) 114 may be in the range of 440 nm to 650 nm. have. Here, the peak wavelength may be a light emitting region.

All layers such as the first hole transport layer (HTL) 112, the electron blocking layer (EBL), and the hole injection layer (HIL) may be referred to as an organic layer. All the organic layers between the substrate 101 and the first emission layer (EML) 114 and the first electrode 102 may be referred to as an organic layer. Accordingly, all of the organic layers between the substrate 101 and the first emission layer (EML) 114 may be referred to as a first organic layer.

Regardless of the number or thickness of the first hole transporting layer (HTL) 112 or the number or thickness of the first electrode 102 or the number or thickness of the electron blocking layer (EBL) (EML) 114, regardless of the number or thickness of the layers (HIL) or the number or thickness of all organic layers between the substrate 101 and the first emission layer (EML) 114, The light emitting position L1 of the first electrode 102 is set within a range of 2,000 to 2,650 angstroms from the first electrode 102. Alternatively, the light emitting position L3 of the first emission layer (EML) 114 may be set to be within a range of 2,000 to 2,650 angstroms from the interface between the substrate 101 and the first electrode 102.

Accordingly, the light emitting position (L1) of the first light emitting layer (EML) 114 from the first electrode 102 is in the range of 2,000 to 2,650 nm, regardless of the number of the at least one first organic layer and the thickness of the first organic layer. Lt; RTI ID = 0.0 > A. ≪ / RTI > Alternatively, the light emitting position (L1) of the first light emitting layer (EML) 114 may be the same as the light emitting position L1 of the substrate 101 and the first electrode 102 (EML), irrespective of the number of the at least one first organic layer and the thickness of the first organic layer To 2 < RTI ID = 0.0 > A < / RTI >

The second light emitting unit 120 may include a second hole transport layer (HTL) 122, a second emission layer (EML) 124, and a second electron transport layer (ETL) 126.

A hole injection layer (HIL) may be further formed under the second hole transport layer (HTL) 122.

A hole blocking layer (HBL) may further be formed on the second emission layer (EML) 124. The second electron transport layer (ETL) 126 and the hole blocking layer HBL may be formed as one layer.

An electron blocking layer (EBL) may be further formed under the second emission layer (EML) 124. The second hole transport layer (HTL) 122 and the electron blocking layer EBL may be formed as one layer.

The second light emitting layer (EML) 124 may include a yellow-green light emitting layer or a yellow light emitting layer and a red light emitting layer or a red light emitting layer and a green light emitting layer, A green (Yellow-Green) light-emitting layer, and a red (Red) light-emitting layer, or a combination thereof. When a red light-emitting layer is further formed in the yellow-green light-emitting layer, the efficiency of the red light-emitting layer can be further improved. The red light-emitting layer may be formed above or below the yellow-green light-emitting layer. The yellow light-emitting layer and the red light-emitting layer, or the red light-emitting layer and the green light-emitting layer, or the yellow-green light-emitting layer and the red light- (EML) 124. In this case, The yellow light-emitting layer and the red light-emitting layer, or the red light-emitting layer and the green light-emitting layer, or the yellow-green light-emitting layer and the red light- EML) 124, or may be configured differently.

The peak wavelength of the light emitting region of the yellow light emitting layer may be in the range of 540 nm to 580 nm. The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. Therefore, the peak wavelength of the light emitting region of the yellow light emitting layer and the red light emitting layer of the second light emitting layer (EML) 124 may be in the range of 540 nm to 650 nm. Here, the peak wavelength may be a light emitting region. The light emitting efficiency of the red light emitting layer can be increased when the light emitting layer is composed of two layers of the yellow light emitting layer and the red light emitting layer.

The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. The peak wavelength of the luminescent region of the green light emitting layer may be in the range of 510 nm to 560 nm. Therefore, the peak wavelength of the emission regions of the red and green emission layers of the second emission layer (EML) 124 may be in the range of 510 nm to 650 nm. Here, the peak wavelength may be a light emitting region. When the red light emitting layer and the green light emitting layer are formed of two layers, the color reproducibility can be improved.

The peak wavelength of the light emitting region of the yellow light emitting layer may be in the range of 540 nm to 580 nm. The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. Therefore, the peak wavelength of the light emitting region of the yellow light emitting layer and the red light emitting layer may be in the range of 540 nm to 650 nm. Here, the peak wavelength may be a light emitting region. The light emitting efficiency of the red light emitting layer can be increased when the light emitting layer is composed of two layers of the yellow light emitting layer and the red light emitting layer.

The second light emitting layer (EML) 124 of the second light emitting portion 120 may include two layers of a red light emitting layer and a yellow-green light emitting layer depending on the characteristics and structure of the device. can do. The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. The peak wavelength of the light emitting region of the yellow-green light emitting layer may be in the range of 510 nm to 580 nm. When the second emission layer (EML) 124 is composed of two layers of a red emission layer and a yellow-green emission layer, the emission efficiency of the red emission layer can be increased. In this case, the peak wavelength of the emission region of the second emission layer (EML) 224 may be in the range of 510 nm to 650 nm. Here, the peak wavelength may be a light emitting region.

The second light emitting layer (EML) 124 may be a yellow-green light emitting layer or a yellow light emitting layer and a red light emitting layer or a red light emitting layer and a green light emitting layer, A peak wavelength of the luminescent region of the second emission layer (EML) 124 is 510 nm to 650 nm, and the emission wavelength of the second emission layer (EML) Nm. ≪ / RTI > Here, the peak wavelength may be a light emitting region.

A first charge generating layer (CGL) 140 may be further formed between the first light emitting portion 110 and the second light emitting portion 120. The first charge generation layer (CGL) 140 may include an N-type charge generation layer and a P-type charge generation layer.

 (ETL) 114, the first electron transport layer (ETL) 116, the first charge generation layer (CGL) 140, the second hole transport layer (HTL) 122, All layers such as a layer (HBL), an electron blocking layer (EBL), and a hole injection layer (HIL) can be referred to as an organic layer. All the organic layers between the first emission layer (EML) 114 and the second emission layer (EML) 124 and the first emission layer (EML) 114 may be referred to as an organic layer. Accordingly, all of the organic layers between the first emission layer (EML) 114 and the second emission layer (EML) 124 may be referred to as a second organic layer.

(HTL) 122 regardless of the number or thickness of the first electron transport layer (ETL) 116 or the thickness of the first charge transport layer (HTL) 122, regardless of the number or thickness of the second hole transport layer Irrespective of the number and thickness of the hole injection layer (HIL) or regardless of the number or thickness of the hole blocking layer (HBL) or the number or thickness of the electron blocking layer (EBL) Regardless of the number or thickness of the first light emitting layer (EML) 114 or the number or thickness of all the organic layers between the substrate 101 and the first light emitting layer (EML) 114, The light emitting position L2 of the second light emitting layer (EML) 124 may be different from the light emitting position L2 of the first light emitting layer (EML) 124 regardless of the number or thickness of all the organic layers between the first light emitting layer (EML) 114 and the second light emitting layer Is set to be within the range of 2,750 to 3,500 angstroms. Alternatively, the emission position L2 of the second emission layer (EML) 124 may be set within a range of 2,750 Å to 3,500 Å from the interface between the substrate 101 and the first electrode 102.

Therefore, the number of the first organic layers, the number of the first organic layers, the number of the second organic layers, the thickness of the second organic layers, the number of the first light emitting layers, and the thickness of the first light emitting layer, The light emitting position L2 of the second light emitting layer (EML) 124 may be set to be within a range of 2,750 Å to 3,500 Å from the first electrode 102. Or the thickness of the first organic layer, the thickness of the first organic layer, the thickness of the second organic layer, the number of the first light emitting layer, and the thickness of the first light emitting layer, The emission position L2 of the second emission layer (EML) 124 may be set to be within a range of 2,750 Å to 3,500 Å from the interface between the substrate 101 and the first electrode 102.

The third light emitting unit 130 includes a third electron transport layer (ETL) 136, a third emission layer (EML) 134, and a third hole transport layer (HTL) 132 under the second electrode 104 .

Although not shown in the drawing, an electron injection layer (EIL) may be further formed on the third electron transport layer (ETL) 136. A hole injection layer (HIL) may be further formed under the third hole transport layer (HTL) 132. A hole blocking layer (HBL) may be further formed on the third emission layer (EML) have. The third electron transport layer (ETL) 136 and the hole blocking layer HBL may be formed as one layer.

An electron blocking layer (EBL) may be further formed under the third emission layer (EML) 134. The third hole transport layer (HTL) 132 and the electron blocking layer EBL may be formed as one layer.

The third emission layer (EML) 134 may include a blue emission layer or a blue emission layer including an auxiliary emission layer capable of emitting different colors. The blue light emitting layer may include one of a blue light emitting layer, a deep blue light emitting layer, and a sky blue light emitting layer.

The auxiliary light-emitting layer may be formed of one of a yellow-green light-emitting layer, a red light-emitting layer, and a green light-emitting layer, or a combination thereof. When the auxiliary light-emitting layer is further formed, the emission efficiency of the green light-emitting layer and the red light-emitting layer can be further improved. When forming the third light emitting layer (EML) 134 including the auxiliary light emitting layer, the yellow-green light emitting layer, the red light emitting layer, or the green light emitting layer is formed in the third light emitting layer (EML) It is also possible to arrange it on the upper side or the lower side. Further, a yellow-green or red light-emitting layer or a green light-emitting layer may be formed on the lower and upper portions of the third light-emitting layer (EML) 134 as the auxiliary light- have. The position and the number of the light emitting layer can be selectively arranged depending on the configuration and characteristics of the device, and the present invention is not limited thereto.

When the auxiliary emission layer is formed in the third emission layer (EML) 134, the peak wavelength of the emission region of the third emission layer (EML) 134 may be in the range of 440 nm to 650 nm. have. Here, the peak wavelength may be a light emitting region.

A second charge generating layer (CGL) 150 may be further formed between the second light emitting portion 120 and the third light emitting portion 130. The second charge generation layer (CGL) 150 may include an N-type charge generation layer (N-CGL) and a P-type charge generation layer (P-CGL).

The second light emitting layer (EML) 124, the second electron transporting layer (ETL) 126, the third hole transporting layer (HTL) 132, the second charge generating layer (CGL) (HIL), an electron blocking layer (EBL), a hole blocking layer (HBL), and the like can be referred to as an organic layer. All the organic layers between the second emission layer (EML) 124 and the third emission layer (EML) 134 and the second emission layer (EML) 124 may be referred to as an organic layer. Accordingly, all the organic layers between the second emission layer (EML) 124 and the third emission layer (EML) 134 may be referred to as a third organic layer.

Regardless of the number or thickness of the second electron transport layer (ETL) 126 or the number or thickness of the third hole transport layer (HTL) 132 regardless of the number or thickness of the second emission layer (EML) Regardless of the number or thickness of the second charge generation layer (CGL) 150 or the number or thickness of the hole injection layer (HIL), or the number or thickness of the electron blocking layer (EBL) (EML) 114, regardless of the number or thickness of the hole blocking layer (HBL) or the number or thickness of the first light emitting layer (EML) 114, or between the substrate 101 and the first light emitting layer Regardless of the number or thickness of all the organic layers between the first emission layer (EML) 114 and the second emission layer (EML) 124, or the number or thickness of all the organic layers between the first emission layer (EML) (EML) 134 regardless of the number and thickness of all the organic layers between the second light emitting layer (EML) 124 and the third light emitting layer (EML) 134 are positioned within a range of 4,500 to 5,100 angstroms from the first electrode 102. [ Alternatively, the emission position L3 of the third emission layer (EML) 134 may be set to be within a range of 4,500 to 5,100 angstroms from the interface between the substrate 101 and the first electrode 102.

Therefore, the number of the at least one first organic layer, the thickness of the first organic layer, the number of the second organic layers, the thickness of the second organic layer, the number of the third organic layers, the thickness of the third organic layer, The light emitting position L3 of the third light emitting layer (EML) 134 is the same as that of the first electrode 102 (EML) regardless of the number of the light emitting layers, the thickness of the first light emitting layer, the number of the second light emitting layers, ) To 4,500 to 5,100 angstroms. Or the number of the first organic layers, the thickness of the first organic layers, the number of the second organic layers, the thickness of the second organic layers, the number of the third organic layers, the thickness of the third organic layers, The light emitting position L3 of the third light emitting layer (EML) 134 may be set to a value different from the light emitting position L3 of the substrate 101 and the second light emitting layer 112 regardless of the number of the light emitting layers, the thickness of the first light emitting layer, And may be set to be within a range of 4,500 A to 5,100 A from the interface of the first electrode 102.

All layers such as the third emission layer (EML) 134, the third electron transport layer (ETL) 136, the hole blocking layer (HBL), and the electron injection layer (EIL) may be referred to as an organic layer. All the organic layers between the third emission layer (EML) 134 and the second electrode 104 and the third emission layer (EML) 134 may be referred to as an organic layer. Accordingly, all of the organic layers between the third emission layer (EML) 134 and the second electrode 104 may be referred to as a first organic layer.

Regardless of the number or thickness of the third electron transport layer (ETL) 136 or the number or thickness of the electron injection layer (EIL), or regardless of the number or thickness of the hole blocking layer (HBL) Regardless of the number or thickness of the light emitting layer (EML) 134, or regardless of the number or thickness of the second light emitting layer (EML) 124, or the number or thickness of the first light emitting layer (EML) (EML) 114 and the second light emitting layer (EML) 124, regardless of the number or thickness of all the organic layers between the substrate 101 and the first light emitting layer (EML) Regardless of the number or thickness of all the organic layers between the second light emitting layer (EML) 124 and the third light emitting layer (EML) 134, or the number or thickness of all the organic layers between the second light emitting layer (L0) of the second electrode 104, regardless of the thickness of all the organic layers between the light emitting layer (EML) 134 and the second electrode 104, It can be set so as to be positioned in the range of 4,500Å to 6,000Å group from the first electrode 102. Alternatively, the position L0 of the second electrode 104 may be set to be within a range of 4,500 to 6,000 ANGSTROM from the interface between the substrate 101 and the first electrode 102. [

Therefore, the number of the at least one first organic layer, the thickness of the first organic layer, the number of the second organic layers, the thickness of the second organic layer, the number of the third organic layers, the thickness of the third organic layer, The number of the first light emitting layers, the number of the organic layers, the thickness of the fourth organic layer, the number of the first light emitting layers, the thickness of the first light emitting layer, the number of the second light emitting layers, The position L0 of the second electrode 104 can be set within a range of 4,500 to 6,000 angstroms from the first electrode 102 regardless of the thickness of the first electrode 102. [ Or the number of the at least one first organic layer, the thickness of the first organic layer, the number of the second organic layers, the thickness of the second organic layer, the number of the third organic layers, the thickness of the third organic layer, The number of the first light emitting layers, the number of the organic layers, the thickness of the fourth organic layer, the number of the first light emitting layers, the thickness of the first light emitting layer, the number of the second light emitting layers, The position L0 of the second electrode 104 can be set within a range of 4,500 to 6,000 angstroms from the interface between the substrate 101 and the first electrode 102. [

Here, the emission position L3 of the third emission layer (EML) 134 may be set to be within a range of 4,500 to 5,100 angstroms from the first electrode 102. The position (L0) of the second electrode 104 may be set to be within a range of 4,500 to 6,000 angstroms from the first electrode 102. When the light emitting position L3 of the third emission layer (EML) 134 is set to 4,500 angstroms from the first electrode 102, the position L0 of the second electrode 104 is set to the first electrode 102 in the range of 4,550 to 6,000 angstroms. When the emission position L3 of the third emission layer (EML) 134 is set to 5,100 angstroms from the first electrode 102, the position L0 of the second electrode 104 is set to the first And may be set so as to be within a range of 5, 150 A to 6,000 A from the electrode 102.

Accordingly, the present invention provides a method of manufacturing a light emitting device, comprising the steps of: preparing a first organic layer, a second organic layer, a second organic layer, The number of the third organic layers, the thickness of the fourth organic layer, the number of the first light emitting layers, the thickness of the first light emitting layer, the number of the second light emitting layers, the thickness of the second light emitting layer, The positions of the second electrode 104 and the positions of the light emitting layers can be set from the first electrode 102 regardless of the thickness of the third light emitting layer.

The structure shown in FIG. 8 shows an example of the present invention. The structure shown in FIG. 8 can be selectively formed according to the structure and characteristics of the organic light emitting device, but is not limited thereto.

9 is a view illustrating a light emitting position of an organic light emitting diode according to a third embodiment of the present invention.

In FIG. 9, the abscissa indicates the wavelength region of light, and the ordinate indicates the emission position of the light emitting layers constituting the light emitting portion from the first electrode 102, which may be referred to as a contour map. Here, except for the second electrode 104, the emission position of the light emitting layers in the emission peak when the EPEL structure of the present invention is applied is shown. The light emitting regions of the light emitting layers have the maximum light emitting range. The first light emitting layer (EML) 114 constituting the first light emitting portion 110 is a blue light emitting layer and therefore the peak wavelength range of the light emitting region of the first light emitting layer (EML) May range from 440 nm to 480 nm. The maximum efficiency can be obtained by emitting light in the white region of the contour map at the maximum wavelength (B-Max) of the blue light emitting layer at 460 nm.

Therefore, the emission position of the first emission layer (EML) 114 is set in the range of 2,000 to 2,650 angstroms, so that the emission peak 114E is positioned at 460 nm which is the maximum wavelength (B-Max) . Therefore, the maximum efficiency can be obtained by causing the first emission layer (EML) 114 to emit light at a maximum wavelength (B-Max) of 460 nm.

A blue light emitting layer and a yellow light emitting layer or a blue light emitting layer and a red light emitting layer or a blue light emitting layer and a green light emitting layer are formed as the first light emitting layer (EML) (EML) 114, the peak wavelength range of the emission region may be in the range of 440 nm to 650 nm. The blue light emitting layer may include one of a blue light emitting layer, a deep blue light emitting layer, and a sky blue light emitting layer.

Since the second light emitting layer (EML) 124 constituting the second light emitting portion 120 is a yellow-green light emitting layer, the peak wavelength of the light emitting region of the second light emitting layer (EML) peak wavelength range may range from 510 nm to 580 nm. The maximum efficiency can be achieved by emitting light in the white region of the contour map at the maximum wavelength (YG-Max) of the yellow-green light emitting layer at 560 nm.

An emission peak 124E corresponding to the emission region of the second emission layer (EML) 124 is set by setting the emission position of the second emission layer (EML) 124 in the range of 2,750 Å to 3,500 Å. Is located at a maximum wavelength (YG-Max) of 560 nm. Accordingly, the second light emitting layer (EML) 124 emits light at a maximum wavelength (YG-Max) of 560 nm, thereby achieving maximum efficiency.

The second light emitting layer (EML) 124 of the second light emitting portion 120 may include two layers of a yellow light emitting layer and a red light emitting layer depending on the characteristics and structure of the device. The peak wavelength of the light emitting region of the yellow light emitting layer may be in the range of 540 nm to 580 nm. The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. Therefore, in this case, it is necessary to emit light at 540 nm to 650 nm, which is the light emitting region of the second light emitting layer (EML) 124, so that maximum efficiency can be obtained in the white region of the contour map.

The second light emitting layer (EML) 124 of the second light emitting portion 120 may be composed of two layers, a red light emitting layer and a green light emitting layer, depending on the characteristics and structure of the device. The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. The peak wavelength of the luminescent region of the green light emitting layer may be in the range of 510 nm to 560 nm. Therefore, in this case, it is necessary to emit light at 510 nm to 650 nm, which is the light emitting region of the second light emitting layer (EML) 124, so that maximum efficiency can be obtained in the white region of the contour map.

The second light emitting layer (EML) 124 of the second light emitting portion 120 may include two layers of a red light emitting layer and a yellow-green light emitting layer depending on the characteristics and structure of the device. can do. The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. The peak wavelength of the light emitting region of the yellow-green light emitting layer may be in the range of 510 nm to 580 nm. Therefore, in this case, it is necessary to emit light at 510 nm to 650 nm, which is the light emitting region of the second light emitting layer (EML) 124, so that maximum efficiency can be obtained in the white region of the contour map.

Accordingly, a yellow-green light-emitting layer, a yellow light-emitting layer and a red light-emitting layer, a red light-emitting layer and a green light-emitting layer, or a light- A peak wavelength range of the luminescent region of the second emission layer (EML) 124 is 510 (nm), and a peak wavelength of the luminescent layer of the second emission layer (EML) Nm to 650 nm. In this case, it is necessary to emit light at 510 nm to 650 nm, which is the light emitting region of the second light emitting layer (EML) 124, so that the maximum efficiency can be obtained in the white region of the contour map.

Since the third emission layer (EML) 134 of the third emission layer 130 is a blue emission layer, the peak wavelength range of the emission region of the third emission layer (EML) May range from 440 nm to 480 nm. The maximum efficiency can be obtained by emitting light in the white region of the contour map at 460 nm which is the maximum wavelength (B-Max) of the blue light emitting layer.

Therefore, the emission position of the third emission layer (EML) 134 is set in the range of 4,500 to 5,100 Å, so that the emission peak 134E of the third emission layer (EML) -Max) at 460 nm. As a result, the third light emitting layer (EML) 134 emits light at a maximum wavelength (B-Max) of 460 nm, thereby achieving maximum efficiency.

A blue light emitting layer and a yellow light emitting layer or a blue light emitting layer and a red light emitting layer or a blue light emitting layer and a green light emitting layer are formed as the third light emitting layer (EML) (EML) 134, the peak wavelength range of the emission region of the third emission layer (EML) 134 may range from 440 nm to 650 nm. The blue light emitting layer may include one of a blue light emitting layer, a deep blue light emitting layer, and a sky blue light emitting layer.

As described above, the position of the emission peak changes according to the emission position of the emission layer. Therefore, the present invention applies an EPEL (Emission Position of Emitting Layers) structure so that the emission peak of the emission layer is located in a desired emission region by setting the emission position of the emission layer constituting the emission portion.

In other words, by applying an EPEL (Emission Position of Emitting Layers) structure to the light emitting layer, the emission peak is located at a specific wavelength, so that the light emitting layers can achieve the maximum efficiency in light of a wavelength corresponding to a specific wavelength .

A maximum emission range of the light emitting layers in the emission region having the specific wavelength can be referred to as a maximum emission range. The maximum emission range of the first emission layer is 440 nm to 470 nm, the maximum emission range of the second emission layer is 530 nm to 570 nm, and the maximum emission range of the third emission layer is 440 nm to 470 nm.

That is, in order to emit light at 440 nm to 470 nm, which is the maximum emission range of the blue emission layer, and 530 nm to 570 nm, which is the maximum emission range of the yellow-green emission layer, The maximum efficiency can be achieved in the white area. It can be seen that the light emitting layer can achieve the maximum efficiency by setting the light emitting position of the light emitting layer of the present invention to correspond to the light emitting region. The EPEL structure of the present invention is characterized in that the number of the first organic layers, the thickness of the first organic layers, the number of the second organic layers, the thickness of the second organic layers, the number of the third organic layers, The thickness of the fourth organic layer, the thickness of the fourth organic layer, the number of the first light emitting layer, the thickness of the first light emitting layer, the number of the second light emitting layer, the thickness of the second light emitting layer, The first light emitting layer, the second light emitting layer, and the third light emitting layer have a maximum light emitting range regardless of the thickness of the third light emitting layer, so that the light emitting layer can achieve the maximum efficiency.

10 is a diagram showing an EL spectrum according to a comparative example and a third embodiment of the present invention.

That is, the emission intensity of the lower emission type structure in which the blue emission layer and the yellow-green emission layer are stacked is shown as a case of applying the EPEL (Emission Position of Emitting Layers) structure of the present invention and a comparative example In FIG. 10, the horizontal axis represents the wavelength region of light, and the vertical axis represents the intensity of light. The emission intensity is a relative value based on the maximum value of the EL spectrum.

In FIG. 10, the embodiment (minimum position) is a portion set to the minimum position when the light emitting positions of the light emitting layers are set. For example, when the emission position L1 of the first emission layer (EML) 114 is in the range of 2,000 to 2,650 angstroms from the first electrode 102, the minimum position is set to 2,000 angstroms.

The embodiment (maximum position) is a portion set to the maximum position when the light emitting positions of the light emitting layers are set. For example, when the emission position L1 of the first emission layer (EML) 114 is in the range of 2,000 to 2,650 angstroms from the first electrode 102, the maximum position is set to 2,650 angstroms.

The embodiment (optimum position) is a portion set to the light emitting position of the first embodiment of the present invention. For example, when the emission position L1 of the first emission layer (EML) 114 is in the range of 2,000 to 2,650 angstroms from the first electrode 102, the emission position of the embodiment is in the range of 2,000 to 2,650 angstroms .

As shown in FIG. 10, when the minimum position of the emission position is deviated from the optimum position in the EPEL (Emission Position of Emitting Layers) structure of the present invention, it is as follows. It can be seen that the luminescence intensity decreases at 440 nm to 480 nm, which is the peak wavelength range of blue light, and is out of the peak wavelength range of blue light. It can be seen that the luminescence intensity decreases in the range of 510 nm to 580 nm, which is the peak wavelength range of the yellow-green light. It can be seen that the peak wavelength range deviates from the peak wavelength range of 600 nm to 650 nm, which is the peak wavelength range of red light.

In the EPEL (Emission Position of Emitting Layers) structure of the present invention, when the maximum position of the emission position is deviated, the optimum position is as follows. It can be seen that the luminescence intensity decreases at 440 nm to 480 nm, which is the peak wavelength range of blue light, and is out of the peak wavelength range of blue light. Therefore, the blue light emission efficiency is reduced. It can be seen that the luminescence intensity is significantly reduced at 510 nm to 580 nm, which is the peak wavelength range of yellow-green light.

Accordingly, it can be seen that the emission intensity increases in the peak wavelength range of blue light when the optimum position of the present invention is set, compared with the case where the minimum or maximum position of the embodiment is set. Further, it can be seen that the emission intensity increases in the peak wavelength range of yellow-green light when the optical position is set to the optimum position of the present invention, as compared with the case of setting the minimum position or the maximum position of the embodiment. In addition, it can be seen that the emission intensity increases in the peak wavelength range of red light when the optimum position of the present invention is set, compared with the case where the minimum or maximum position of the embodiment is set.

The efficiency of the white organic light emitting device using the EPEL (Emission Position of Emitting Layers) structure of the present invention is shown in Table 5 below. And the efficiency of the comparative example is 100%, the efficiency of the third embodiment of the present invention is shown.

In Table 5 below, the comparative example is a white organic light emitting device of a bottom emission type having a structure in which a blue light emitting layer and a yellow-green light emitting layer are laminated. The embodiment is a white organic light emitting device of the lower emission type when the optimum position of the EPEL (Emission Position of Emitting Layers) structure of the present invention is applied.

As shown in Table 5, when the efficiency of the comparative example is 100% when the EPEL (Emission Position of Emitting Layers) structure of the present invention is compared with the comparative example, the green efficiency is increased by about 25% Able to know. The blue efficiency increased by 47% and the white efficiency rose by 19%. The average efficiency was increased by about 20% as compared with the comparative example.

Table 6 shows the panel efficiency of the white organic light emitting device to which the EPEL (Emission Position of Emitting Layers) structure of the present invention is applied and the comparative example.

Table 6 below shows the efficiencies of the embodiment (minimum position) and the embodiment (maximum position) when the efficiency of the embodiment (optimum position) is taken as 100%.

The panel efficiency was measured when the driving current density was 10 mA / cm ² . When the panel efficiency of the embodiment is 100%, the panel efficiency of the embodiment (minimum position) and the embodiment (maximum position) are measured.

As shown in Table 6, the efficiency of red, green, blue, and white is reduced at the boundary between the embodiment (minimum position) and the embodiment (maximum position) have. It can be seen that the efficiencies of red, green, blue and white are further reduced in the embodiment (maximum position) than in the embodiment (minimum position). Therefore, it can be seen that the panel efficiency decreases when the emission position of the EPEL structure of the present invention deviates from the optimum position.

As described in the third embodiment of the present invention, the organic light emitting device may be an organic light emitting device of a bottom emission type.

The position of the second electrode may be set in the range of 4,500 to 6,000 angstroms from the first electrode.

The light emitting position of the first light emitting layer can be set in the range of 2,000 A to 2,650 A from the first electrode.

The light emitting position of the second light emitting layer can be set in the range of 2,750 Å to 3,500 Å from the first electrode.

The light emitting position of the third light emitting layer can be set in the range of 4,500 to 5,100 angstroms from the first electrode.

The first light emitting layer may include a blue light emitting layer, a blue light emitting layer and a yellow-green light emitting layer, or a blue light emitting layer and a red light emitting layer, or a blue light emitting layer and a green light emitting layer, or a combination thereof.

The second light emitting layer may include a yellow-green light emitting layer, or a yellow light emitting layer and a red light emitting layer, or a red light emitting layer and a green light emitting layer, or a yellow-green light emitting layer and a red light emitting layer, or a combination thereof.

The third light emitting layer may be a blue light emitting layer, or a blue light emitting layer and a yellow-green light emitting layer, or a blue light emitting layer and a red light emitting layer, or a blue light emitting layer and a green light emitting layer, or a combination thereof.

The light emitting region of the first light emitting layer may range from 440 nm to 650 nm, the light emitting region of the second light emitting layer may range from 510 nm to 650 nm, and the light emitting region of the third light emitting layer may range from 440 nm to 650 nm.

The maximum emission range of the first emission layer is in the range of 440 nm to 470 nm, the maximum emission range of the second emission layer is in the range of 530 nm to 570 nm, and the maximum emission range of the third emission layer is in the range of 440 nm to 470 nm .

As described above, it can be seen that the emission intensity of the light emitting layer can be increased when the EPEL (Emission Position of Emitting Layers) structure of the present invention is applied. Further, it can be seen that the panel efficiency is improved because the emission intensity is increased.

The organic light emitting device according to the present invention may be applied to a lighting device, a thin-type light source of a liquid crystal display device, or a display device. Hereinafter, embodiments in which the organic light emitting device according to the present invention is applied to a display device will be described.

FIG. 11 is a cross-sectional view of an organic light emitting display device including an organic light emitting device according to an embodiment of the present invention, which corresponds to the organic light emitting device according to the first, second, and third embodiments of the present invention. .

11, an OLED display 1000 according to the present invention includes a substrate 10, a thin film transistor (TFT), an overcoat layer 1150, a first electrode 102, a light emitting portion 1180, And a second electrode (104). The thin film transistor TFT includes a gate electrode 1115, a gate insulating layer 1120, a semiconductor layer 1131, a source electrode 1133, and a drain electrode 1135.

Though the thin film transistor (TFT) is shown as an inverted staggered structure in FIG. 11, it may be formed in a coplanar structure.

The substrate 10 may be made of glass, metal, or plastic.

A gate electrode 1115 is formed on the substrate 10 and connected to a gate line (not shown). The gate electrode 1115 may be formed of one selected from the group consisting of Mo, Al, Cr, Au, Ti, Ni, Ne, And may be a multilayer composed of any one selected or an alloy thereof.

The gate insulating layer 1120 is formed on the gate electrode 1115 and may be a silicon oxide film (SiOx), a silicon nitride film (SiNx), or a multilayer thereof, but is not limited thereto.

The semiconductor layer 1131 is formed on the gate insulating layer 1120 and is formed of amorphous silicon (a-Si), polycrystalline silicon (poly-Si), oxide semiconductor or organic semiconductor . When the semiconductor layer is formed of an oxide semiconductor, it may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), or the like. An etch stopper (not shown) may be formed on the semiconductor layer 1131 to protect the semiconductor layer 1131, but may be omitted depending on the configuration of the device.

The source electrode 1133 and the drain electrode 1135 may be formed on the semiconductor layer 1131. [ The source electrode 1133 and the drain electrode 1135 may be formed of a single layer or a multilayer and may be formed of a metal such as molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti) ), Neodymium (Nd), and copper (Cu), or an alloy thereof.

The passivation layer 1140 is formed on the source electrode 1133 and the drain electrode 1135 and may be formed of a silicon oxide film (SiOx), a silicon nitride film (SiNx), or a multilayer thereof. Or an acryl resin, a polyimide resin, or the like, but is not limited thereto.

The color filter 1145 is formed on the first passivation layer 1140 and only one sub-pixel is shown in the figure. However, the color filter 1145 may be formed on the red sub-pixel, the blue sub- . The color filter 1145 includes a red (R) color filter, a green (G) color filter, and a blue (B) color filter patterned for each sub-pixel. The color filter 1145 transmits only light of a specific wavelength among the white light emitted from the light emitting unit 1180.

The overcoat layer 1150 is formed on the color filter 1145 and may be an acryl resin or a polyimide resin, an oxide film (SiOx), a silicon nitride film (SiNx) or a multilayer thereof, It does not.

The first electrode 102 is formed on the overcoat layer 1150. The first electrode 102 is formed on the overcoat layer 1140 and the overcoat layer 1150 through the contact hole CH, And is electrically connected to the electrode 1135. The drain electrode 1135 and the first electrode 1102 are electrically connected to each other through the contact hole CH of the protective layer 1140 and the overcoat layer 1150, 1133 and the first electrode 102 are electrically connected to each other.

A bank layer 1170 is formed on the first electrode 102 and defines a pixel region. That is, the bank layer 1170 is formed in a matrix structure in a boundary region between a plurality of pixels, so that the pixel region is defined by the bank layer 1170. The bank layer 1170 may be formed of an organic material such as a benzocyclobutene (BCB) resin, an acryl resin, or a polyimide resin. Alternatively, the bank layer 1170 may be formed of a photosensitizer containing a black pigment. In this case, the bank layer 1170 serves as a light shielding member.

The light emitting portion 1180 is formed on the bank layer 1170. As shown in the first, second, and third embodiments of the present invention, the light emitting unit 1180 includes a first light emitting unit 110 formed on the first electrode 102, (120) and a third light emitting unit (130).

The second electrode 1104 is formed on the light emitting portion 1180.

Although not shown in FIG. 11, a sealing portion may be formed on the second electrode 104. The sealing portion prevents moisture from penetrating into the light emitting portion 1180. The sealing portion may be composed of a plurality of layers in which inorganic substances different from each other are stacked, or may be formed of a plurality of layers in which inorganic substances and organic substances are alternately stacked. Further, an encapsulation substrate may be further formed on the encapsulation portion. The sealing substrate may be made of glass or plastic, or may be made of metal. The sealing substrate can be bonded to the sealing portion by an adhesive.

In the above embodiment, the bottom emission type is described as an example. In case of the bottom emission method, a polarizer should be used in order to lower the reflectance to the external light source. The use of the polarizing plate may cause a problem that luminance of about 60% is reduced.

Through various experiments, the inventors of the present invention have developed a white organic light emitting device of a top emission type which has improved luminous efficiency and panel efficiency of a light emitting layer and does not use a polarizing plate, Respectively. In addition, the organic light emitting diode display employing the top emission method according to the embodiment of the present invention can improve the aperture ratio as compared with the organic emission display using the bottom emission method.

12 is a schematic view showing a white organic light emitting device according to fourth and fifth embodiments of the present invention.

The white organic light emitting device 200 shown in FIG. 12 includes a first light emitting portion 210 and a second light emitting portion 220 between first and second electrodes 202 and 204 and first and second electrodes 202 and 204, And a third light emitting unit 230.

The first electrode 202 may be formed of gold (Au), silver (Ag), aluminum (Al), molybdenum (Mo), magnesium (Mg) , But is not limited thereto. Or indium tin oxide (ITO), indium zinc oxide (IZO), or indium gallium zinc oxide (IGZO), which are transparent conductive materials such as TCO (Transparent Conductive Oxide).

The second electrode 204 is formed of a transparent conductive material such as ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), IGZO (Indium Gallium Zinc Oxide), or the like as a TCO (Transparent Conductive Oxide) And the present invention is not limited thereto. Alternatively, the second electrode 204 may be formed of a metallic material such as gold (Au), silver (Ag), aluminum (Al), molybdenum (Mo), magnesium (Mg) But the present invention is not limited thereto. Alternatively, the second electrode 204 may be formed of a transparent conductive oxide (TCO), indium tin oxide (ITO), indium zinc oxide (IZO), indium gallium zinc oxide (IGZO) , Aluminum (Al), molybdenum (Mo), and magnesium (Mg), but the present invention is not limited thereto.

The first electrode 202 and the second electrode 204 may be referred to as an anode or a cathode, respectively.

The first electrode 202 may be a reflective electrode and the second electrode 204 may be a transflective electrode.

The white organic light emitting device 200 of the top emission type of the present invention includes a first light emitting portion 210, a second light emitting portion 220, and a second light emitting portion 210 between the first electrode 202 and the second electrode 204, And a third light emitting unit 230. The white organic light emitting device 200 of the top emission type of the present invention sets the position of the second electrode from the first electrode and the light emitting position of the first light emitting layer, Thereby improving the luminance, the luminous efficiency and the panel efficiency. That is, an EPEL (Emission Position of Emitting Layers) structure is applied to the first light emitting layer, the second light emitting layer, and the third light emitting layer. The first light emitting portion 210, the second light emitting portion 220, and the third light emitting portion 230 are formed in the light emitting region of the first light emitting layer, the second light emitting layer, and the third light emitting layer, (Emission Position of Emitting Layers) structure.

The position L0 of the second electrode 204 is set to be 4,700 A to 5,400 A from the first electrode 202. Alternatively, the position (L0) of the second electrode 204 is set to be 4,700 to 5,400 angstroms from the reflective surface of the first electrode 202. The emission peak of the light emitting layer constituting the first light emitting portion 210, the second light emitting portion 220 and the third light emitting portion 230 is located at a specific wavelength, The light emitting efficiency can be improved. The emission peak may be referred to as an emission peak of an organic layer constituting the light emitting units.

 The position L0 of the second electrode 204 is set from the first electrode 202 and the light emitting position L1 of the first light emitting portion 210 closest to the first electrode 202 Is set to be in the range of 150 ANGSTROM to 700 ANGSTROM. Alternatively, the light emitting position L1 of the first light emitting portion 210 is set to be 150 to 700 angstroms from the reflective surface of the first electrode 202. [ The first light emitting portion 210 may include a blue light emitting layer. The blue light emitting layer may include one of a blue light emitting layer, a deep blue light emitting layer, and a sky blue light emitting layer. Since the deep blue light emitting layer is located in a shorter wavelength region than the blue light emitting layer, the deep blue light emitting layer can be advantageous for improving the color reproduction rate and brightness.

The light emitting position L1 of the first light emitting portion 210 is in a range of 150 to 700 ANGSTROM from the first electrode 202 regardless of at least one of the thickness of the light emitting layer, the number of light emitting layers, the thickness of the organic layer, . Alternatively, the light emitting position L1 of the first light emitting portion 210 may be positioned within a range of 150 to 700 angstroms from the reflective surface of the first electrode 202. [ Accordingly, the emission peak is located in the blue emission region, and the first emission section 210 emits light with a wavelength corresponding to the emission peak, thereby achieving the maximum luminance . The peak wavelength of the emission region of the blue emission layer may be in the range of 440 nm to 480 nm. The auxiliary light emitting layer of the first light emitting part 210 may include a red light emitting layer, a green light emitting layer, and a yellow-green light emitting layer, or a combination thereof. The peak wavelength of the light emitting region of the light emitting layer including the auxiliary light emitting layer and forming the first light emitting portion 210 may be in a range of 440 nm to 650 nm. Here, the peak wavelength may be a light emitting region.

The light emitting position L2 of the second light emitting portion 220 is set to be 1,600 Å to 2,300 Å from the first electrode 202. Alternatively, the light emitting position L2 of the second light emitting portion 220 is set to be within a range of 1,600 to 2,300 angstroms from the reflective surface of the first electrode 202. [

The second light emitting unit 220 may include a yellow-green light emitting layer. The light emitting position L2 of the second light emitting portion 220 may be set to be in a range of from 1,600 to 2,300 (nm) from the first electrode 202 regardless of at least one of the thickness of the light emitting layer, the number of light emitting layers, Å. Alternatively, the light emitting position L2 of the second light emitting portion 220 may be located within a range of 1,600 to 2,300 angstroms from the reflective surface of the first electrode 202. [

Accordingly, when the emission peak is located in the yellow-green emission region and the light of the wavelength corresponding to the emission peak is emitted, the second emission unit 220 emits the maximum luminance So that it can be used. The peak wavelength of the light emitting region of the yellow-green light emitting layer may be in the range of 510 nm to 580 nm. Here, the peak wavelength may be a light emitting region.

The second light emitting unit 220 may include two layers, a red light emitting layer and a green light emitting layer, depending on the characteristics and structure of the device. When the red light emitting layer and the green light emitting layer are formed of two layers, the color reproducibility can be improved. Therefore, the peak wavelength of the luminescent region of the red light emitting layer and the green light emitting layer can be in the range of 510 nm to 650 nm. Here, the peak wavelength may be a light emitting region.

In addition, the second light emitting portion 220 may include two layers, a red light emitting layer and a yellow-green light emitting layer, depending on the characteristics and structure of the device. When the red light-emitting layer and the yellow-green light-emitting layer are composed of two layers, the light-emitting efficiency of the red light-emitting layer can be increased. The peak wavelength of the emission region of the red light-emitting layer and the yellow-green light-emitting layer may be in the range of 510 nm to 650 nm. Here, the peak wavelength may be a light emitting region.

In addition, the second light emitting portion 220 may include two layers, a yellow light emitting layer and a red light emitting layer, depending on the characteristics and structure of the device. The light emitting efficiency of the red light emitting layer can be increased when the light emitting layer is composed of two layers of the yellow light emitting layer and the red light emitting layer. The peak wavelength of the light emitting region of the yellow light emitting layer and the red light emitting layer may be in the range of 540 nm to 650 nm. Here, the peak wavelength may be a light emitting region.

The second light emitting portion 220 may include a yellow-green light emitting layer or a yellow light emitting layer and a red light emitting layer or a red light emitting layer and a green light emitting layer or a yellow- A peak wavelength of a light emitting region of the second light emitting portion 220 is in a range of 510 nm to 650 nm when the first light emitting portion 220 is formed of one of a yellow- can do. Here, the peak wavelength may be a light emitting region.

The light emitting position L3 of the third light emitting unit 230 is set to be within a range of 2,400 to 3,100 angstroms from the first electrode 202. [ Alternatively, the light emitting position L3 of the third light emitting portion 230 is set to be within a range of 2,400 to 3,100 angstroms from the reflective surface of the first electrode 202.

The third light emitting part 230 may be a blue light emitting layer. The blue light emitting layer may include one of a blue light emitting layer, a deep blue light emitting layer, and a sky blue light emitting layer. Since the deep blue light emitting layer is located in a shorter wavelength region than the blue light emitting layer, the deep blue light emitting layer can be advantageous for improving the color reproduction rate and brightness.

The light emitting position L3 of the third light emitting portion 230 may be set to be in a range of 2,400 to 3,100 (m) from the first electrode 202 regardless of at least one of the thickness of the light emitting layer, the number of light emitting layers, Å. Alternatively, the light emitting position L3 of the third light emitting portion 230 is set to be within a range of 2,400 to 3,100 angstroms from the reflective surface of the first electrode 202.

Accordingly, the emission peak of the third light emitting unit 230 is located in the blue light emitting region, so that the third light emitting unit 230 can emit the maximum luminance. The peak wavelength of the emission region of the blue emission layer may be in the range of 440 nm to 480 nm. The third light emitting portion 230 may include a red light emitting layer, a green light emitting layer, and a yellow-green light emitting layer as an auxiliary light emitting layer or a combination thereof. The peak wavelength of the light emitting region of the light emitting layer including the auxiliary light emitting layer and forming the third light emitting portion 230 may be in a range of 440 nm to 650 nm. Here, the peak wavelength may be a light emitting region.

The present invention relates to an organic light emitting diode (OLED) light emitting diode (LED) which emits light of a top emission (top emission) structure using an EPEL (Emission Position of Emitting Layers) structure in which a light emitting position of the light emitting layers is set irrespective of at least one of the thickness of the light emitting layer, the number of light emitting layers, Emitting organic electroluminescent (EL) device. The present invention can be applied to the first light emitting portion 210, the second light emitting portion 220 and the third light emitting portion 220 regardless of the thickness of the light emitting layer, the number of light emitting layers, the thickness of the organic layer, (230) has an EPEL (Emission Position of Emitting Layers) structure having a maximum emission range in the emission regions of the first emission layer, the second emission layer, and the third emission layer.

13 is a schematic view showing a white organic light emitting device according to a fourth embodiment of the present invention.

The white organic light emitting device 200 shown in FIG. 13 includes a first light emitting portion 210 and a second light emitting portion 210 between a first electrode 202 and a second electrode 204, and first and second electrodes 202 and 204, (220) and a third light emitting portion (230).

The first electrode 202 and the second electrode 204 may be referred to as an anode or a cathode, respectively.

The first electrode 202 may be a reflective electrode and the second electrode 204 may be a transflective electrode.

Referring to FIG. 13, the position of the second electrode 204 is set to be within a range of 4,700 A to 5,400 A from the first electrode 202. The emission peak of the light emitting layers constituting the first, second and third light emitting units 210, 220 and 230 is set by setting the position L0 of the first electrode 202, Can be positioned at a specific wavelength, and the efficiency of the light emitting layers can be improved by emitting light of the specific wavelength.

The first light emitting part 210 includes a first hole transport layer (HTL) 212, a first emission layer (EML) 214, and a first electron transport layer (ETL) 216 on the first electrode 202 .

An auxiliary electrode 203 may be formed on the first electrode 202. The auxiliary electrode 203 is made of ITO (indium tin oxide), IZO (indium zinc oxide), IGZO (indium gallium zinc oxide), or the like, which is a transparent conductive material such as a metal oxide or a TCO But is not limited thereto.

Although not shown in the drawing, the first light emitting unit 210 may further include a hole injection layer (HIL). The hole injection layer HIL is located on the auxiliary electrode 203 and smoothly injects holes from the first electrode 202. The first hole transport layer (HTL) 212 supplies holes from the hole injection layer (HIL) to the first emission layer (EML) 214. The first electron transport layer (ETL) 216 supplies electrons from the first charge generation layer (CGL) 240 to the first emission layer (EML) 214.

In the first emission layer (EML) 214, holes supplied through the first hole transport layer (HIL) 212 and electrons supplied through the first electron transport layer (ETL) The light is recombined.

When the first hole transport layer (HTL) 212 is formed on the first electrode 202 without forming the auxiliary electrode 203, electrons are emitted to the first emission layer (EML) It may be difficult to move the first light emitting layer (EML) 214, and holes may be difficult to move to the first light emitting layer (EML) 214, which may raise the driving voltage. The auxiliary electrode 203 may not be formed depending on the characteristics and structure of the device.

The first hole transport layer (HTL) 212 may be formed by applying two or more layers or two or more materials.

The first electron transport layer (ETL) 216 may be formed by applying two or more layers or two or more materials.

A hole blocking layer (HBL) may further be formed on the first emission layer (EML) 214. The hole blocking layer HBL prevents the holes generated in the first light emitting layer 214 from being transferred to the first electron transporting layer 216, The light emitting efficiency of the first light emitting layer (EML) 214 can be improved. The first electron transport layer (ETL) 216 and the hole blocking layer HBL may be formed as one layer.

An electron blocking layer (EBL) may be further formed under the first emission layer (EML) 214. The electron blocking layer EBL prevents the electrons generated in the first emission layer 214 from being transferred to the first hole transport layer 212, The light emitting efficiency of the first light emitting layer (EML) 214 can be improved. The first hole transport layer (HTL) 212 and the electron blocking layer EBL may be formed as one layer.

The first light emitting layer (EML) 214 is composed of a blue light emitting layer or a blue light emitting layer including an auxiliary light emitting layer capable of emitting different colors. The blue light emitting layer may include one of a blue light emitting layer, a deep blue light emitting layer, and a sky blue light emitting layer. Since the deep blue light emitting layer is located in a shorter wavelength region than the blue light emitting layer, the deep blue light emitting layer can be advantageous for improving the color reproduction rate and brightness.

The auxiliary light-emitting layer may be composed of one or a combination of a yellow-green light-emitting layer, a red light-emitting layer, and a green light-emitting layer. When the auxiliary light-emitting layer is further formed, the luminous efficiency of the green light-emitting layer and the red light-emitting layer can be further improved. When forming the first light emitting layer (EML) 214 including the auxiliary light emitting layer, the yellow-green light emitting layer or the red light emitting layer or the green light emitting layer may be formed in the first light emitting layer (EML) ) 214 on the lower surface of the substrate 210. A yellow-green light emitting layer, a red light emitting layer or a green light emitting layer, which is the auxiliary light emitting layer, may be formed on the first light emitting layer (EML) It is also possible. The position and the number of the light emitting layer can be selectively arranged depending on the configuration and characteristics of the device, and the present invention is not limited thereto.

When the auxiliary light emitting layer is formed in the first light emitting layer (EML) 214, the peak wavelength of the light emitting region of the first light emitting layer (EML) 214 may be in the range of 440 nm to 650 nm. have. Here, the peak wavelength may be a light emitting region.

The first hole transport layer (HTL) 212, the electron blocking layer (EBL), and the hole injection layer (HIL) may all be referred to as an organic layer. All the organic layers between the first electrode 202 and the first emission layer (EML) 214 and the auxiliary electrode 203 may be referred to as an organic layer. Accordingly, all of the organic layers between the first electrode 202 and the first emission layer (EML) 214 may be referred to as a first organic layer.

Regardless of the number or thickness of the first hole transport layer (HTL) 212 or the number or thickness of the auxiliary electrode 203 or the number or thickness of the electron blocking layer (EBL) (EML) 214, regardless of the number and thickness of all the organic layers between the first electrode 202 and the first emission layer (EML) 214, regardless of the number and thickness of the first emission layer (HIL) Is set to be within a range of 150 ANGSTROM to 700 ANGSTROM from the first electrode (202). Alternatively, the emission position L1 of the first emission layer (EML) 214 is set to be within a range of 150 ANGSTROM to 700 ANGSTROM from the reflective surface of the first electrode 202. Accordingly, the position L1 of the first emission layer (EML) 214 from the first electrode 202 is in the range of 150 ANGSTROM to 700 ANGSTROM, regardless of the number of the at least one first organic layer and the thickness of the first organic layer As shown in FIG. Alternatively, the light emitting position (L1) of the first light emitting layer (EML) 214 is 150 Å from the reflecting surface of the first electrode 202 regardless of the number of the at least one first organic layer and the thickness of the first organic layer. To 700 ANGSTROM.

The second light emitting portion 220 may include a second HTL 222, a second EML 224, and a second ETL 226.

The second hole transport layer (HTL) 222 may be formed by applying two or more layers or two or more materials.

The second hole transport layer (HTL) 222 may be formed of the same material as the first hole transport layer (HTL) 212, but is not limited thereto.

A hole injection layer (HIL) may be further formed under the second hole transport layer (HTL) 222. The hole injection layer (HIL) injects holes from the first charge transport layer (CGL) 240 into the second hole transport layer (HTL) 222.

The second electron transport layer (ETL) 226 may be formed by applying two or more layers or two or more materials.

The second electron transport layer (ETL) 226 may be formed of the same material as the first electron transport layer (ETL) 216, but is not limited thereto.

A hole blocking layer (HBL) may be additionally formed on the second emission layer (EML) 224. The hole blocking layer HBL prevents holes generated in the second light emitting layer 224 from flowing to the second electron transporting layer 226, The light emitting efficiency of the second light emitting layer (EML) 224 can be improved. The second electron transport layer (ETL) 226 and the hole blocking layer HBL may be formed as a single layer.

An electron blocking layer (EBL) may be further formed under the second emission layer (EML) The electron blocking layer EBL prevents electrons generated in the second emission layer EML 224 from flowing to the second hole transport layer HTL 222, The light emitting efficiency of the second light emitting layer (EML) 224 can be improved. The second hole transport layer (HTL) 222 and the electron blocking layer EBL may be formed as one layer.

The second emission layer (EML) 224 is composed of a yellow-green emission layer. The peak wavelength of the light emitting region of the yellow-green light emitting layer may be in the range of 510 nm to 580 nm. Here, the peak wavelength may be a light emitting region.

The second emission layer (EML) 224 may include a yellow-green emission layer or a yellow emission layer and a red emission layer or a red emission layer and a green emission layer, A green (Yellow-Green) light-emitting layer, and a red (Red) light-emitting layer, or a combination thereof. When a red light-emitting layer is further formed in the yellow-green light-emitting layer, the efficiency of the red light-emitting layer can be further improved. The red light-emitting layer may be formed above or below the yellow-green light-emitting layer. The yellow light-emitting layer and the red light-emitting layer, or the red light-emitting layer and the green light-emitting layer, or the yellow-green light-emitting layer and the red light- (EML) 224, as shown in FIG. The yellow light-emitting layer and the red light-emitting layer, or the red light-emitting layer and the green light-emitting layer, or the yellow-green light-emitting layer and the red light- EML) 224, or may be configured differently.

The peak wavelength of the light emitting region of the yellow light emitting layer may be in the range of 540 nm to 580 nm. The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. Therefore, the peak wavelength of the light emitting region of the yellow light emitting layer and the red light emitting layer of the second light emitting layer (EML) 224 may be in the range of 540 nm to 650 nm. Here, the peak wavelength may be a light emitting region. The light emitting efficiency of the red light emitting layer can be increased when the light emitting layer is composed of two layers of the yellow light emitting layer and the red light emitting layer.

The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. The peak wavelength of the luminescent region of the green light emitting layer may be in the range of 510 nm to 560 nm. Therefore, the peak wavelength of the emission regions of the red and green emission layers of the second emission layer (EML) 224 may be in the range of 510 nm to 650 nm. Here, the peak wavelength may be a light emitting region. When the red light emitting layer and the green light emitting layer are formed of two layers, the color reproducibility can be improved.

The peak wavelength of the light emitting region of the yellow light emitting layer may be in the range of 540 nm to 580 nm. The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. Therefore, the peak wavelength of the light emitting region of the yellow light emitting layer and the red light emitting layer of the second light emitting layer (EML) 224 may be in the range of 540 nm to 650 nm. Here, the peak wavelength may be a light emitting region. The light emitting efficiency of the red light emitting layer can be increased when the light emitting layer is composed of two layers of the yellow light emitting layer and the red light emitting layer.

The second light emitting layer (EML) 224 of the second light emitting portion 220 may include two layers of a red light emitting layer and a yellow-green light emitting layer depending on the characteristics and structure of the device. can do. The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. The peak wavelength of the light emitting region of the yellow-green light emitting layer may be in the range of 510 nm to 580 nm. When the red light-emitting layer and the yellow-green light-emitting layer are composed of two layers, the light-emitting efficiency of the red light-emitting layer can be increased. In this case, the peak wavelength of the emission region of the second emission layer (EML) 224 may be in the range of 510 nm to 650 nm. Here, the peak wavelength may be a light emitting region.

The second light emitting layer (EML) 124 may be a yellow-green light emitting layer or a yellow light emitting layer and a red light emitting layer or a red light emitting layer and a green light emitting layer, A peak wavelength of the luminescent region of the second emission layer (EML) 124 is 510 nm to 650 nm, and the emission wavelength of the second emission layer (EML) Nm. ≪ / RTI > Here, the peak wavelength may be a light emitting region.

A first charge generating layer (CGL) 240 may be further formed between the first light emitting portion 210 and the second light emitting portion 220. The first charge generation layer (CGL) 240 adjusts the charge balance between the first light emitting portion 210 and the second light emitting portion 220. The first charge generation layer (CGL) 240 may include an N-type charge generation layer (N-CGL) and a P-type charge generation layer (P-CGL).

The first charge generating layer (CGL) 240 may be a single layer.

(EML) 214, the first electron transport layer (ETL) 216, the first charge generation layer (CGL) 240, the second hole transport layer 222, the HBL , An electron blocking layer (EBL), a hole injection layer (HIL), and the like can be referred to as an organic layer. All organic layers between the first emission layer (EML) 214 and the second emission layer (EML) 224 and the first emission layer (EML) 214 may be referred to as an organic layer. Accordingly, all of the organic layers between the first emission layer (EML) 214 and the second emission layer (EML) 224 may be referred to as a second organic layer.

Regardless of the number or thickness of the first electron transport layer (ETL) 216,

Regardless of the number or thickness of the HTL 222 or the number or thickness of the first charge generating layer (CGL) 240, or the number or thickness of the HBL, or Regardless of the number or thickness of the electron blocking layer EBL or the number or thickness of the hole injection layer HIL or the number or thickness of the first light emitting layer (EML) 214, (EML) 214 and the second emission layer (EML) 224, regardless of the number or thickness of all organic layers between the first emission layer (EML) 214 and the first emission layer (EML) The emission position L2 of the second emission layer (EML) 224 is set to be within a range of 1,600 Å to 2,300 Å from the first electrode 202, irrespective of the number and thickness of all the organic layers. Alternatively, the emission position L2 of the second emission layer (EML) 224 is set to be within a range of 1,600 Å to 2,300 Å from the reflective surface of the first electrode 202. Therefore, the number of the first organic layers, the number of the first organic layers, the number of the second organic layers, the thickness of the second organic layers, the number of the first light emitting layers, and the thickness of the first light emitting layer, The position L2 of the second emission layer (EML) 224 from the first electrode 202 may be set to be within a range of 1,600 Å to 2,300 Å. Or the thickness of the first organic layer, the thickness of the first organic layer, the thickness of the second organic layer, the number of the first light emitting layer, and the thickness of the first light emitting layer, The position L2 of the second emission layer (EML) 224 from the reflective surface of the first electrode 202 may be set to be within a range of 1,600 Å to 2,300 Å.

The third light emitting portion 230 may include a third electron transport layer (ETL) 236, a third emission layer (EML) 234, and a third hole transport layer (HTL) 232. Although not shown in the drawing, an electron injection layer (EIL) may be further formed on the third electron transport layer (ETL) 236. The electron injection layer (EIL) injects electrons from the second electrode (204) into the third electron transport layer (ETL) (236).

The third hole transport layer (HTL) 232 may be formed of TPD (N, N'-bis (3-methylphenyl) -N, N'- 1-yl) -N, N'-diphenyl-benzidine), but the present invention is not limited thereto.

The third hole transport layer (HTL) 232 may be formed by applying two or more layers or two or more materials.

The third hole transport layer (HTL) 232 may be formed of the same material as the second hole transport layer (HTL) 222, but is not limited thereto.

A hole injection layer (HIL) may be further formed under the third hole transport layer (HTL) 232. The hole injection layer (HIL) injects holes from the second charge generation layer (CGL) 250 into the third hole transport layer (HTL) 232.

The third electron transport layer (ETL) 236 may be formed of oxadiazole, triazole, phenanthroline, benzoxazole, or benzthiazole. However, But the present invention is not limited thereto.

The third electron transport layer (ETL) 236 may be formed by applying two or more layers or two or more materials.

The third electron transport layer (ETL) 236 may be formed of the same material as the second electron transport layer (ETL) 226, but is not limited thereto.

A second charge generating layer (CGL) 250 may be further formed between the second light emitting portion 220 and the third light emitting portion 230. The second charge generation layer (CGL) 250 controls the charge balance between the second light emitting portion 220 and the third light emitting portion 230. The second charge generation layer (CGL) 250 may include an N-type charge generation layer (N-CGL) and a P-type charge generation layer (P-CGL).

The N-type charge generation layer N-CGL serves to inject electrons into the second light emitting portion 220 while the P-type charge generation layer P-CGL serves as a third light emitting portion 230 It serves to inject holes.

The N-type charge generation layer (N-CGL) may be formed of an alkali metal such as lithium (Li), sodium (Na), potassium (K), or cesium (Cs), or an alkali metal such as magnesium (Mg), strontium (Sr) Ba), or an organic layer doped with an alkaline earth metal such as radium (Ra). However, the present invention is not limited thereto.

The P-type charge generation layer (P-CGL) may be formed of an organic layer containing a P-type dopant, but the present invention is not limited thereto.

The second charge generation layer (CGL) 250 is formed of the same material as the N-type charge generation layer (N-CGL) and the P-type charge generation layer (P-CGL) of the first charge generation layer But the present invention is not limited thereto.

The second charge generation layer (CGL) 250 may be a single layer.

A hole blocking layer (HBL) may further be formed on the third emission layer (EML) 234. The hole blocking layer HBL prevents the holes generated in the third emission layer 234 from flowing to the third electron transport layer 236, The light emitting efficiency of the third emission layer (EML) 234 can be improved. The third electron transport layer (ETL) 236 and the hole blocking layer HBL may be formed as a single layer.

An electron blocking layer (EBL) may be further formed under the third emission layer (EML) 234. The electron blocking layer EBL prevents the electrons generated in the third emission layer 234 from passing over the third hole transport layer (HTL) 232, The light emitting efficiency of the third emission layer (EML) 234 can be improved. The third hole transporting layer (HTL) 232 and the electron blocking layer EBL may be formed as one layer.

The third emission layer (EML) 234 may include a blue emission layer or a blue emission layer including an auxiliary emission layer capable of emitting a different color. The blue light emitting layer may include one of a blue light emitting layer, a deep blue light emitting layer, and a sky blue light emitting layer. Since the deep blue light emitting layer is located in a shorter wavelength region than the blue light emitting layer, the deep blue light emitting layer can be advantageous for improving the color reproduction rate and brightness.

The auxiliary light-emitting layer may be composed of one or a combination of a yellow-green light-emitting layer, a red light-emitting layer, and a green light-emitting layer. When the auxiliary light-emitting layer is further formed, the emission efficiency of the green light-emitting layer and the red light-emitting layer can be further improved. When forming the third light emitting layer (EML) 134 including the auxiliary light emitting layer, the yellow-green light emitting layer or the red light emitting layer or the green light emitting layer is formed as the third light emitting layer (EML) 234, respectively. Further, the yellow-green or red light-emitting layer or the green light-emitting layer, which is the auxiliary light-emitting layer, may be constituted similarly or differently on the third light-emitting layer (EML) 234 It is possible. The position and the number of the light emitting layer can be selectively arranged depending on the configuration and characteristics of the device, and the present invention is not limited thereto.

When the auxiliary light emitting layer is formed in the third light emitting layer (EML) 234, the peak wavelength of the light emitting region of the third light emitting layer (EML) 234 may be in the range of 440 nm to 650 nm. have. Here, the peak wavelength may be a light emitting region.

(EML) 224, the second electron transport layer (ETL) 226, the second charge generation layer (CGL) 250, the third hole transport layer 232, the HBL , The electron blocking layer (EBL), the hole injection layer (HIL), and the like can be referred to as an organic layer. All the organic layers between the second emission layer (EML) 224 and the third emission layer (EML) 234 and the second emission layer (EML) 224 may be referred to as an organic layer. Accordingly, all organic layers between the second emission layer (EML) 224 and the third emission layer (EML) 234 may be referred to as a third organic layer.

(HTL) 232, regardless of the number or thickness of the second electron transport layer (ETL) 226 or the number or thickness of the second charge generation layer (CGL) 250, Regardless of the number or thickness of the first light emitting layer (EML) 214 or the number or thickness of the second light emitting layer (EML) 224 or the number or thickness of the first light emitting layer (EML) (EML) 214 and the second light emitting layer (EML) 214, regardless of the number or thickness of all the organic layers between the first light emitting layer (EML) 214 and the first light emitting layer Regardless of the number or thickness of the organic layers or the number or thickness of all the organic layers between the second emission layer (EML) 224 and the third emission layer (EML) 234, the third emission layer (EML) 234 are set to be within a range of 2,400 to 3,100 angstroms from the first electrode 202. Alternatively, the emission position L3 of the third emission layer (EML) 234 is set to be within a range of 2,400 to 3,100 angles from the reflective surface of the first electrode 202. Therefore, the number of the at least one first organic layer, the thickness of the first organic layer, the number of the second organic layers, the thickness of the second organic layer, the number of the third organic layers, the thickness of the third organic layer, (L3) of the third light emitting layer (EML) 234 from the first electrode 202 regardless of the number of the light emitting layers, the thickness of the first light emitting layer, the number of the second light emitting layers, and the thickness of the second light emitting layer. Can be set to be within a range of 2,400 ANGSTROM to 3,100 ANGSTROM. Or the number of the first organic layers, the thickness of the first organic layers, the number of the second organic layers, the thickness of the second organic layers, the number of the third organic layers, the thickness of the third organic layers, (EML) 234 from the reflective surface of the first electrode 202 regardless of the number of the light emitting layers, the thickness of the first light emitting layer, the number of the second light emitting layers, and the thickness of the second light emitting layer (L3) may be set to be within a range of 2,400 to 3,100 angstroms.

All layers such as the third emission layer (EML) 234, the third electron transport layer (ETL) 236, the hole blocking layer (HBL), and the electron injection layer (EIL) may be referred to as an organic layer. All organic layers between the third emission layer (EML) 234 and the second electrode 204 and the second electrode 204 and the third emission layer (EML) 234 may be referred to as an organic layer. Accordingly, all of the organic layers, including the second electrode 204, between the third emission layer (EML) 234 and the second electrode 204 may be referred to as a fourth organic layer.

(HBL), regardless of the number or thickness of the third electron transport layer (ETL) 236 or the number or thickness of the electron injection layer (EIL) or the number or thickness of the hole blocking layer Regardless of the number or thickness of the electrodes 204 or the number or thickness of the third emission layer (EML) 234 or between all of the first emission layer (EML) 214 and the first emission layer Regardless of the number or thickness of the organic layers or the number or thickness of all the organic layers between the first and second emission layers (EMLs) 214 and 224, (EML) 2134) and the second electrode 204, regardless of the number or thickness of all the organic layers between the second emission layer (EML) 224 and the third emission layer (EML) 234 The position L0 of the second electrode 204 from the first electrode 202 is within a range of 4,700 A to 5,400 A, So that you can set. Alternatively, the position L0 of the second electrode 204 may be set to be within a range of 4,700 A to 5,400 A from the reflective surface of the first electrode 202.

Therefore, the number of the at least one first organic layer, the thickness of the first organic layer, the number of the second organic layers, the thickness of the second organic layer, the number of the third organic layers, the thickness of the third organic layer, The number of the first light emitting layers, the number of the organic layers, the thickness of the fourth organic layer, the number of the first light emitting layers, the thickness of the first light emitting layer, the number of the second light emitting layers, The position L0 of the second electrode 204 can be set within a range of 4,700 to 5,400 angstroms from the first electrode 202 regardless of the thickness of the first electrode 202. [ Or the number of the at least one first organic layer, the thickness of the first organic layer, the number of the second organic layers, the thickness of the second organic layer, the number of the third organic layers, the thickness of the third organic layer, The number of the first light emitting layers, the number of the organic layers, the thickness of the fourth organic layer, the number of the first light emitting layers, the thickness of the first light emitting layer, the number of the second light emitting layers, The position L0 of the second electrode 204 can be set to be within a range of 4,700 A to 5,400 A from the reflective surface of the first electrode 202 regardless of the thickness of the first electrode 202.

The structure shown in FIG. 13 shows an example of the present invention. The structure shown in FIG. 13 can be selectively formed according to the structure and characteristics of the white organic light emitting device, but is not limited thereto.

FIG. 14 is a view showing a light emitting position of an organic light emitting diode according to a fourth embodiment of the present invention.

In FIG. 14, the abscissa axis represents the wavelength region of light, and the ordinate axis represents the emission position of the light emitting layers constituting the light emitting portion from the first electrode 202, which may be referred to as a contour map. Here, except for the first electrode 202 and the second electrode 204, the emission positions of the light emitting layers in the emission peak at the application of the EPEL structure of the present invention are shown. The light emitting regions of the light emitting layers have the maximum light emitting range.

The first light emitting layer (EML) 214 constituting the first light emitting portion 210 is a blue light emitting layer. Therefore, the peak wavelength range of the light emitting region of the first light emitting layer (EML) May range from 440 nm to 480 nm. It is necessary to emit light at 440 nm to 480 nm which is a light emitting region of a blue light emitting layer, so that maximum efficiency can be obtained in a white region of a contour map.

Therefore, the emission position of the first emission layer (EML) 214 is set in the range of 150 to 700 Å, and the emission peak 214 E is positioned in the range of 440 nm to 480 nm. As a result, light can be emitted from the first emission layer (EML) 214 at 440 nm to 480 nm, thereby achieving maximum efficiency.

The blue light emitting layer may include one of a blue light emitting layer, a deep blue light emitting layer, and a sky blue light emitting layer.

A yellow-green or red light-emitting layer or a green light-emitting layer is formed as an auxiliary light-emitting layer in the first light-emitting layer (EML) 214 constituting the first light-emitting portion 210 The peak wavelength range of the emission region of the first emission layer (EML) 214 may range from 440 nm to 650 nm. Therefore, in this case, it is necessary to emit light at 440 nm to 650 nm, which is the light emitting region of the first light emitting layer (EML) 214, so that maximum efficiency can be obtained in the white region of the contour map.

In FIG. 14, the first light emitting layer (EML) 214 does not include an auxiliary light emitting layer, and the first light emitting layer (EML) 214 shows a light emitting position using a blue light emitting layer as an example. Therefore, the peak wavelength range of the emission region of the first emission layer (EML) 214 can reach the maximum efficiency in the range of 440 nm to 480 nm.

Since the second emission layer (EML) 224 of the second emission layer 220 is a yellow-green emission layer, the peak emission wavelength of the emission region of the second emission layer (EML) peak wavelength range may range from 510 nm to 580 nm. It is necessary to emit light at 510 nm to 580 nm which is a light emitting region of a yellow-green light emitting layer, thereby achieving maximum efficiency in a white region of a contour map.

Therefore, the emission position of the second emission layer (EML) 224 is set to be within the range of 1,600 Å to 2,300 Å, so that the emission peak 224E of the second emission layer (EML) To 580 nm. Accordingly, the second light emitting layer (EML) 224 emits light at 510 nm to 580 nm, thereby achieving the maximum efficiency.

The second light emitting layer (EML) 224 of the second light emitting portion 220 may be composed of two layers, a red light emitting layer and a green light emitting layer, depending on the characteristics and structure of the device. The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. The peak wavelength of the luminescent region of the green light emitting layer may be in the range of 510 nm to 560 nm. Therefore, in this case, it is necessary to emit light at 510 nm to 650 nm which is the light emitting region of the second light emitting layer (EML) 224, so that the maximum efficiency can be obtained in the white region of the contour map.

The second light emitting layer (EML) 224 of the second light emitting portion 220 may include two layers of a red light emitting layer and a yellow-green light emitting layer depending on the characteristics and structure of the device. can do. The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. The peak wavelength of the light emitting region of the yellow-green light emitting layer may be in the range of 510 nm to 580 nm. Therefore, in this case, it is necessary to emit light at 510 nm to 650 nm which is the light emitting region of the second light emitting layer (EML) 224, so that the maximum efficiency can be obtained in the white region of the contour map.

The second light emitting layer (EML) 224 of the second light emitting portion 220 may include two layers of a yellow light emitting layer and a red light emitting layer depending on the characteristics and structure of the device. The peak wavelength of the light emitting region of the yellow light emitting layer may be in the range of 540 nm to 580 nm. The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. Therefore, in this case, it is necessary to emit light at 540 nm to 650 nm, which is an emission region of the second emission layer (EML) 224, so that maximum efficiency can be obtained in the white region of the contour map.

Accordingly, a yellow-green light-emitting layer, a yellow light-emitting layer, a red light-emitting layer, a red light-emitting layer, and a green light-emitting layer are formed as the second light-emitting layer (EML) A peak wavelength range of the luminescent region of the second emission layer (EML) 224 is 510 (nm), and the emission wavelength of the second emission layer (EML) Nm to 650 nm. In this case, it is necessary to emit light at 510 nm to 650 nm which is a light emitting region of the second light emitting layer (EML) 224, so that maximum efficiency can be obtained in the white region of the contour map.

In FIG. 14, the second light emitting layer (EML) 224 does not include an auxiliary light emitting layer in the second light emitting layer (EML) 224, and a light emitting position is shown using a yellow-green light emitting layer as an example. Therefore, the peak wavelength range of the emission region of the second emission layer (EML) 224 can exhibit the maximum efficiency in the range of 510 nm to 580 nm.

The third light emitting layer (EML) 234 constituting the third light emitting portion 230 is a blue light emitting layer. Therefore, the peak wavelength range of the light emitting region of the third light emitting layer (EML) May range from 440 nm to 480 nm. It is necessary to emit light at 440 nm to 480 nm which is a light emitting region of a blue light emitting layer, so that maximum efficiency can be obtained in a white region of a contour map.

Therefore, the emission position of the third emission layer (EML) 234 is set to be within the range of 2,400 to 3,100, so that the emission peak 234E of the third emission layer (EML) 234 is 440 nm To 480 nm. Thus, the third emission layer (EML) 234 emits light at 440 nm to 480 nm, thereby achieving maximum efficiency.

The blue light emitting layer may include one of a blue light emitting layer, a deep blue light emitting layer, and a sky blue light emitting layer.

A yellow-green or red light-emitting layer or a green light-emitting layer is formed as an auxiliary light-emitting layer in the third light-emitting layer (EML) 234 constituting the third light-emitting portion 230 , The peak wavelength range of the emission region of the third emission layer (EML) 234 may range from 440 nm to 650 nm. Therefore, in this case, it is necessary to emit light at 440 to 650 nm, which is the light emitting region of the third light emitting layer (EML) 234, so that the maximum efficiency can be obtained in the white region of the contour map.

In FIG. 14, the third light emitting layer (EML) 234 does not include an auxiliary light emitting layer, and the third light emitting layer (EML) 234 shows a light emitting position using a blue light emitting layer as an example. Therefore, the peak wavelength range of the emission region of the third emission layer (EML) 234 can exhibit the maximum efficiency in the range of 440 nm to 480 nm.

As described above, the position of the emission peak changes according to the emission position of the emission layer. Therefore, the present invention applies an emission position of emission (EPEL) structure in which the emission peak of the emission layer is positioned in a desired emission region by setting the emission position of the emission layer constituting the emission portion.

Accordingly, the emission peak is positioned at a specific wavelength by applying the emission position of the emission layer (EPEL) structure to the emission layer, so that the emission layers can maximize efficiency in the light corresponding to a specific wavelength.

The maximum emission range of the light emitting layers at the specific wavelength is the maximum emission range. Therefore, the maximum emission range of the first emission layer is 440 nm to 470 nm, the maximum emission range of the second emission layer is 530 nm to 570 nm, and the maximum emission range of the third emission layer may be 440 nm to 470 nm.

That is, in order to emit light at 440 nm to 470 nm, which is the maximum emission range of the blue emission layer, and 530 nm to 570 nm, which is the maximum emission range of the yellow-green emission layer, The maximum efficiency can be achieved in the white area. It can be seen that the light emitting layer can achieve the maximum efficiency by setting the light emitting position of the light emitting layer of the present invention to correspond to the light emitting region. The EPEL structure of the present invention is characterized in that the number of the first organic layers, the thickness of the first organic layers, the number of the second organic layers, the thickness of the second organic layers, the number of the third organic layers, The thickness of the fourth organic layer, the thickness of the fourth organic layer, the number of the first light emitting layer, the thickness of the first light emitting layer, the number of the second light emitting layer, the thickness of the second light emitting layer, The first light emitting layer, the second light emitting layer, and the third light emitting layer have a maximum light emitting range regardless of the thickness of the third light emitting layer, so that the light emitting layer can achieve the maximum efficiency.

15 is a diagram showing an EL spectrum according to the fourth embodiment of the present invention.

In FIG. 15, the horizontal axis represents the wavelength region of light, and the vertical axis represents the intensity of light. The emission intensity is a relative value based on the maximum value of the EL spectrum.

In FIG. 15, the embodiment (minimum position) is a portion set to the minimum position when the light emitting positions of the light emitting layers are set. For example, when the emission position L1 of the first emission layer (EML) 214 is in the range of 150 to 700 angstroms from the first electrode 202, the minimum position is set to 150 angstroms.

The embodiment (maximum position) is a portion set to the maximum position when the light emitting positions of the light emitting layers are set. For example, when the emission position L1 of the first emission layer (EML) 214 is in the range of 150 ANGSTROM to 700 ANGSTROM from the first electrode 202, the maximum position is set to 700 ANGSTROM.

The embodiment (optimum position) is a portion set to the light emitting position of the fourth embodiment of the present invention. For example, when the emission position L1 of the first emission layer (EML) 214 is in the range of 150 ANGSTROM to 700 ANGSTROM from the first electrode 202, the emission position of the embodiment is set in the range of 150 ANGSTROM to 700 ANGSTROM .

As shown in FIG. 15, when the minimum position of the emission position is deviated from the optimum position in the EPEL (Emission Position of Emitting Layers) structure of the present invention, it is as follows. It can be seen that the luminescence intensity decreases at 440 nm to 480 nm, which is the peak wavelength range of blue light, and is out of the peak wavelength range of blue light. It can be seen that the luminescence intensity is significantly reduced at 510 nm to 580 nm, which is the peak wavelength range of yellow-green light. It can be seen that the luminescence intensity is remarkably decreased at 600 nm to 650 nm, which is the peak wavelength range of red light.

In the EPEL (Emission Position of Emitting Layers) structure of the present invention, when the maximum position of the emission position is deviated, the optimum position is as follows. It can be seen that the luminescence intensity decreases at 440 nm to 480 nm, which is the peak wavelength range of blue light, and is out of the peak wavelength range of blue light. It can be seen that the luminescence intensity decreases in the range of 510 nm to 580 nm, which is the peak wavelength range of the yellow-green light.

Accordingly, it can be seen that the emission intensity increases in the peak wavelength range of blue light when the optimum position of the present invention is set, compared with the case where the minimum or maximum position of the embodiment is set. Further, it can be seen that the emission intensity increases in the peak wavelength range of yellow-green light when the optimum position of the present invention is set to the minimum position or the maximum position of the embodiment. It can be seen that the emission intensity is increased in the peak wavelength range of red light when it is set to the optimum position of the present invention.

Table 7 shows the panel efficiency of the white organic light emitting device using the EPEL (Emission Position of Emitting Layers) structure of the present invention and the comparative example. And the efficiency of the comparative example is 100%, the efficiency of the fourth embodiment of the present invention is shown.

In Table 7 below, the comparative example is a white organic light emitting device of a bottom emission type including a first light emitting portion, a second light emitting portion and a third light emitting portion, wherein the first light emitting portion is a blue light emitting layer, A yellow-green light-emitting layer, and a third light-emitting portion is a blue light-emitting layer. The embodiment is a top emission type white organic light emitting device when an optimum position of an EPEL (Emission Position of Emitting Layers) structure of the present invention is applied.

As shown in Table 7, when the efficiency of the comparative example is 100% when the EPEL (Emission Position of Emitting Layers) structure of the present invention is compared to the comparative example, the red efficiency is increased by 39% Green efficiency increased by 63%. The blue efficiency increased by 47% and the white efficiency rose by 53%.

The panel efficiency of the white organic light emitting device using the EPEL (Emission Position of Emitting Layers) structure of the present invention and the comparative example are as shown in Table 8 below.

Table 8 below shows the efficiencies of the embodiment (minimum position) and the embodiment (maximum position) when the efficiency of the embodiment (optimum position) is taken as 100%.

The panel efficiency was measured when the driving current density was 10 mA / cm ² . When the panel efficiency of the embodiment is 100%, the panel efficiency of the embodiment (minimum position) and the embodiment (maximum position) are measured.

As shown in Table 8, the efficiency of red, green, blue, and white is reduced at the boundary between the embodiment (minimum position) and the embodiment (maximum position) . It can be seen that the efficiencies of Red, Green, Blue and White are further reduced in the embodiment (minimum position) than in the embodiment (maximum position). Therefore, it can be seen that the panel efficiency decreases when the emission position of the EPEL structure of the present invention deviates from the optimum position.

As described in the fourth embodiment of the present invention, the organic light emitting device may be an organic light emitting device of a top emission type.

The position of the second electrode may be set in the range of 4,700 A to 5,400 A from the first electrode.

The light emitting position of the first light emitting layer can be set in the range of 150 to 700 占 from the first electrode.

The light emitting position of the second light emitting layer can be set in the range of 1,600 Å to 2,300 Å from the first electrode.

The light emitting position of the third light emitting layer can be set in the range of 2,400 Å to 3,100 Å from the first electrode.

The first light emitting layer may include a blue light emitting layer, a blue light emitting layer and a yellow-green light emitting layer, or a blue light emitting layer and a red light emitting layer, or a blue light emitting layer and a green light emitting layer, or a combination thereof.

The second light emitting layer may include a yellow-green light emitting layer, or a yellow light emitting layer and a red light emitting layer, or a red light emitting layer and a green light emitting layer, or a yellow-green light emitting layer and a red light emitting layer, or a combination thereof.

The third light emitting layer may be a blue light emitting layer, or a blue light emitting layer and a yellow-green light emitting layer, or a blue light emitting layer and a red light emitting layer, or a blue light emitting layer and a green light emitting layer, or a combination thereof.

The light emitting region of the first light emitting layer may range from 440 nm to 650 nm, the light emitting region of the second light emitting layer may range from 510 nm to 650 nm, and the light emitting region of the third light emitting layer may range from 440 nm to 650 nm.

The maximum emission range of the first emission layer is in the range of 440 nm to 470 nm, the maximum emission range of the second emission layer is in the range of 530 nm to 570 nm, and the maximum emission range of the third emission layer is in the range of 440 nm to 470 nm .

As described above, it can be seen that the emission intensity of the light emitting layer can be increased when the EPEL (Emission Position of Emitting Layers) structure of the present invention is applied. Further, it can be seen that the panel efficiency is improved because the emission intensity is increased.

16 is a schematic view showing a white organic light emitting device according to a fifth embodiment of the present invention. In describing the present embodiment, description of the same or corresponding elements to those of the previous embodiment will be omitted.

The white organic light emitting device 200 shown in FIG. 16 includes a first light emitting portion 210 and a second light emitting portion 210 between a first electrode 202 and a second electrode 204, and first and second electrodes 202 and 204, (220) and a third light emitting portion (230).

The position of the second electrode 204 is set to be 4,700 A to 5,400 A from the first electrode 202. The emission peak of the light emitting layers constituting the first, second and third light emitting units 210, 220 and 230 is set by setting the position L0 of the first electrode 202, Can be positioned at a specific wavelength, and the efficiency of the light emitting layers can be improved by emitting light of the specific wavelength.

The first light emitting part 210 includes a first hole transport layer (HTL) 212, a first emission layer (EML) 214, and a first electron transport layer (ETL) 216 on the first electrode 202 .

An auxiliary electrode 203 may be formed on the first electrode 202. The auxiliary electrode 203 may not be formed depending on the characteristics and structure of the device.

Although not shown in the drawing, the first light emitting portion 210 may further include a hole injection layer (HIL) on the auxiliary electrode 203. A hole blocking layer (HBL) may further be formed on the first emission layer (EML) 214. The first electron transport layer (ETL) 216 and the hole blocking layer HBL may be formed as one layer.

An electron blocking layer (EBL) may be further formed under the first emission layer (EML) 214. The first hole transport layer (HTL) 212 and the electron blocking layer EBL may be formed as one layer.

The first light emitting layer (EML) 214 is composed of a blue light emitting layer or a blue light emitting layer including an auxiliary light emitting layer capable of emitting different colors. The blue light emitting layer may include one of a blue light emitting layer, a deep blue light emitting layer, and a sky blue light emitting layer. Since the deep blue light emitting layer is located in a shorter wavelength region than the blue light emitting layer, the deep blue light emitting layer can be advantageous for improving the color reproduction rate and brightness.

The auxiliary light-emitting layer may be composed of one or a combination of a yellow-green light-emitting layer, a red light-emitting layer, and a green light-emitting layer. When the auxiliary light-emitting layer is further formed, the luminous efficiency of the green light-emitting layer and the red light-emitting layer can be further improved. When forming the first light emitting layer (EML) 214 including the auxiliary light emitting layer, the yellow-green light emitting layer or the red light emitting layer or the green light emitting layer may be formed in the first light emitting layer (EML) ) 214 on the lower surface of the substrate 210. A yellow-green light emitting layer, a red light emitting layer or a green light emitting layer, which is the auxiliary light emitting layer, may be formed on the first light emitting layer (EML) It is also possible. The position and the number of the light emitting layer can be selectively arranged depending on the configuration and characteristics of the device, and the present invention is not limited thereto.

When the auxiliary light emitting layer is formed in the first light emitting layer (EML) 214, the peak wavelength of the light emitting region of the first light emitting layer (EML) 214 may be in the range of 440 nm to 650 nm. have. Here, the peak wavelength may be a light emitting region.

The first hole transport layer (HTL) 212, the electron blocking layer (EBL), and the hole injection layer (HIL) may all be referred to as an organic layer. All the organic layers between the first electrode 202 and the first emission layer (EML) 214 and the auxiliary electrode 203 may be referred to as an organic layer. Accordingly, all of the organic layers between the first electrode 202 and the first emission layer (EML) 214 may be referred to as a first organic layer.

Regardless of the number or thickness of the first hole transporting layer (HTL) 212 or the number or thickness of the auxiliary electrode 203, or regardless of the number and thickness of the electron blocking layer (EBL) Regardless of the number or thickness of the layer HIL, regardless of the number or thickness of all the organic layers between the first electrode 202 and the first emission layer (EML) 214, the first emission layer (EML) 214 Is set to be within a range of 150 to 650 ANGSTROM from the first electrode 202. Alternatively, the emission position L1 of the first emission layer (EML) 214 is set to be within a range of 150 to 650 ANGSTROM from the reflective surface of the first electrode 202. Therefore, the position (L1) of the first light emitting layer (EML) 214 from the first electrode 202 is in the range of 150 ANGSTROM to 650 ANGSTROM, regardless of the number of the at least one first organic layer and the thickness of the first organic layer As shown in FIG. Alternatively, the light emitting position (L1) of the first light emitting layer (EML) 214 is 150 Å from the reflecting surface of the first electrode 202 regardless of the number of the at least one first organic layer and the thickness of the first organic layer. To < RTI ID = 0.0 > 650A. ≪ / RTI >

The second light emitting portion 220 may include a second HTL 222, a second EML 224, and a second ETL 226.

A hole injection layer (HIL) may be further formed under the second hole transport layer (HTL) 222.

A hole blocking layer (HBL) may be additionally formed on the second emission layer (EML) 224. The second electron transport layer (ETL) 226 and the hole blocking layer HBL may be formed as a single layer.

An electron blocking layer (EBL) may be further formed under the second emission layer (EML) The second hole transport layer (HTL) 222 and the electron blocking layer EBL may be formed as one layer.

The second emission layer (EML) 224 is composed of a yellow-green emission layer. The peak wavelength of the light emitting region of the yellow-green light emitting layer may be in the range of 510 nm to 580 nm. Here, the peak wavelength may be a light emitting region.

The second light emitting layer (EML) 124 may include a yellow-green light emitting layer, a yellow light emitting layer and a red light emitting layer, a red light emitting layer and a green light emitting layer, A yellow-green light-emitting layer and a red light-emitting layer, or a combination thereof. When a red light-emitting layer is further formed in the yellow-green light-emitting layer, the efficiency of the red light-emitting layer can be further improved. The red light-emitting layer may be formed above or below the yellow-green light-emitting layer. The yellow light-emitting layer and the red light-emitting layer, or the red light-emitting layer and the green light-emitting layer, or the yellow-green light-emitting layer and the red light- (EML) 224, as shown in FIG. The yellow light-emitting layer and the red light-emitting layer, or the red light-emitting layer and the green light-emitting layer, or the yellow-green light-emitting layer and the red light- EML) 224, or may be configured differently.

The peak wavelength of the light emitting region of the yellow light emitting layer may be in the range of 540 nm to 580 nm. The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. Therefore, the peak wavelength of the light emitting region of the yellow light emitting layer and the red light emitting layer of the second light emitting layer (EML) 224 may be in the range of 540 nm to 650 nm. Here, the peak wavelength may be a light emitting region. The light emitting efficiency of the red light emitting layer can be increased when the light emitting layer is composed of two layers of the yellow light emitting layer and the red light emitting layer.

The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. The peak wavelength of the luminescent region of the green light emitting layer may be in the range of 510 nm to 560 nm. Therefore, the peak wavelength of the emission regions of the red and green emission layers of the second emission layer (EML) 224 may be in the range of 510 nm to 650 nm. Here, the peak wavelength may be a light emitting region. When the red light emitting layer and the green light emitting layer are formed of two layers, the color reproducibility can be improved.

The peak wavelength of the light emitting region of the yellow light emitting layer may be in the range of 540 nm to 580 nm. The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. Therefore, the peak wavelength of the light emitting region of the yellow light emitting layer and the red light emitting layer of the second light emitting layer (EML) 224 may be in the range of 540 nm to 650 nm. Here, the peak wavelength may be a light emitting region. The light emitting efficiency of the red light emitting layer can be increased when the light emitting layer is composed of two layers of the yellow light emitting layer and the red light emitting layer.

The second light emitting layer (EML) 224 of the second light emitting portion 220 may include two layers of a red light emitting layer and a yellow-green light emitting layer depending on the characteristics and structure of the device. can do. The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. The peak wavelength of the light emitting region of the yellow-green light emitting layer may be in the range of 510 nm to 580 nm. When the red light-emitting layer and the yellow-green light-emitting layer are composed of two layers, the light-emitting efficiency of the red light-emitting layer can be increased. In this case, the peak wavelength of the emission region of the second emission layer (EML) 224 may be in the range of 510 nm to 650 nm. Here, the peak wavelength may be a light emitting region.

The second light emitting layer (EML) 124 may be a yellow-green light emitting layer or a yellow light emitting layer and a red light emitting layer or a red light emitting layer and a green light emitting layer, A peak wavelength of the luminescent region of the second emission layer (EML) 124 is 510 nm to 650 nm, and the emission wavelength of the second emission layer (EML) Nm. ≪ / RTI > Here, the peak wavelength may be a light emitting region.

A first charge generating layer (CGL) 240 may be further formed between the first light emitting portion 210 and the second light emitting portion 220. The first charge generation layer (CGL) 240 may include an N-type charge generation layer (N-CGL) and a P-type charge generation layer (P-CGL).

(EML) 214, the first electron transport layer (ETL) 216, the first charge generation layer (CGL) 240, the second hole transport layer 222, the HBL , An electron blocking layer (EBL), a hole injection layer (HIL), and the like can be referred to as an organic layer. All organic layers between the first emission layer (EML) 214 and the second emission layer (EML) 224 and the first emission layer (EML) 214 may be referred to as an organic layer. Accordingly, all of the organic layers between the first emission layer (EML) 214 and the second emission layer (EML) 224 may be referred to as a second organic layer.

(CGL) 240, regardless of the number or thickness of the first electron transport layer (ETL) 216 or the number or thickness of the second hole transport layer (HTL) 222, Irrespective of the number and thickness of the hole injection layer (HIL), or regardless of the number or thickness of the hole blocking layer (HBL) or the number or thickness of the electron blocking layer (EBL) Regardless of the number or thickness of the first light emitting layer (EML) 214 or the number or thickness of all the organic layers between the first electrode 202 and the first light emitting layer (EML) 214, The light emitting position L2 of the second light emitting layer (EML) 224 may be the same as that of the first light emitting layer (EML) 214 regardless of the number or thickness of all the organic layers between the first light emitting layer (EML) 214 and the second light emitting layer The first electrode 202 is set to be within a range of 1,700 to 2,300 angstroms. Alternatively, the emission position L2 of the second emission layer (EML) 224 is set to be within a range of 1,700 Å to 2,300 Å from the reflective surface of the first electrode 202. Therefore, the number of the first organic layers, the number of the first organic layers, the number of the second organic layers, the thickness of the second organic layers, the number of the first light emitting layers, and the thickness of the first light emitting layer, The position L1 of the second emission layer (EML) 224 from the first electrode 202 can be set to be within a range of 1,700 Å to 2,300 Å. Or the thickness of the first organic layer, the thickness of the first organic layer, the thickness of the second organic layer, the number of the first light emitting layer, and the thickness of the first light emitting layer, The position L1 of the second emission layer (EML) 224 from the reflective surface of the first electrode 202 may be set within a range of 1,700 to 2,300 angstroms.

The third light emitting portion 230 may include a third electron transport layer (ETL) 236, a third emission layer (EML) 234, and a third hole transport layer (HTL) 232. Although not shown in the drawing, an electron injection layer (EIL) may be further formed on the third electron transport layer (ETL) 236. A hole injection layer (HIL) may be further formed under the third hole transport layer (HTL) 232. A second charge generation layer (CGL) 250 may be further formed between the second light emitting portion 220 and the third light emitting portion 230. The second charge generation layer (CGL) An N-type charge generation layer (N-CGL), and a P-type charge generation layer (P-CGL).

A hole blocking layer (HBL) may further be formed on the third emission layer (EML) 234. The third electron transport layer (ETL) 236 and the hole blocking layer HBL may be formed as a single layer.

An electron blocking layer (EBL) may be further formed under the third emission layer (EML) 234. The third hole transporting layer (HTL) 232 and the electron blocking layer EBL may be formed as one layer.

The third emission layer (EML) 234 may include a blue emission layer or a blue emission layer including an auxiliary emission layer capable of emitting a different color. The blue light emitting layer may include one of a blue light emitting layer, a deep blue light emitting layer, and a sky blue light emitting layer. Since the deep blue light emitting layer is located in a shorter wavelength region than the blue light emitting layer, the deep blue light emitting layer can be advantageous for improving the color reproduction rate and brightness.

The auxiliary light-emitting layer may be composed of one or a combination of a yellow-green light-emitting layer, a red light-emitting layer, and a green light-emitting layer. When the auxiliary light-emitting layer is further formed, the emission efficiency of the green light-emitting layer and the red light-emitting layer can be further improved. When forming the third light emitting layer (EML) 234 including the auxiliary light emitting layer, the yellow-green light emitting layer or the red light emitting layer or the green light emitting layer is formed as the third light emitting layer (EML) 234, respectively. Further, the yellow-green or red light-emitting layer or the green light-emitting layer, which is the auxiliary light-emitting layer, may be constituted similarly or differently on the third light-emitting layer (EML) 234 It is possible. The position and the number of the light emitting layer can be selectively arranged depending on the configuration and characteristics of the device, and the present invention is not limited thereto.

When the auxiliary light emitting layer is formed in the third light emitting layer (EML) 234, the peak wavelength of the light emitting region of the third light emitting layer (EML) 234 may be in the range of 440 nm to 650 nm. have. Here, the peak wavelength may be a light emitting region.

(EML) 224, the second electron transport layer (ETL) 226, the second charge generation layer (CGL) 250, the third hole transport layer 232, the HBL , The electron blocking layer (EBL), the hole injection layer (HIL), and the like can be referred to as an organic layer. All the layers between the second emission layer (EML) 224 and the third emission layer (EML) 234 may be referred to as an organic layer. Accordingly, all organic layers between the second emission layer (EML) 224 and the third emission layer (EML) 234 may be referred to as a third organic layer.

(HTL) 232, regardless of the number or thickness of the second electron transport layer (ETL) 226 or the number or thickness of the second charge generation layer (CGL) 250, Regardless of the number or thickness of the first light emitting layer (EML) 214 or the number or thickness of the second light emitting layer (EML) 224 or the number or thickness of the first light emitting layer (EML) (EML) 214 and the second light emitting layer (EML) 214, regardless of the number or thickness of all the organic layers between the first light emitting layer (EML) 214 and the first light emitting layer Regardless of the number or thickness of the organic layers or the number or thickness of all the organic layers between the second emission layer (EML) 224 and the third emission layer (EML) 234, the third emission layer (EML) 234 is set to be within a range of 2,400 to 3,000 angstroms from the first electrode 202. Alternatively, the emission position L3 of the third emission layer (EML) 234 is set to be within a range of 2,400 to 3,000 ANGSTROM from the reflective surface of the first electrode 202. Therefore, the number of the at least one first organic layer, the thickness of the first organic layer, the number of the second organic layers, the thickness of the second organic layer, the number of the third organic layers, the thickness of the third organic layer, (L3) of the third light emitting layer (EML) 234 from the first electrode 202 regardless of the number of the light emitting layers, the thickness of the first light emitting layer, the number of the second light emitting layers, and the thickness of the second light emitting layer. Can be set to be within a range of 2,400 to 3,000 ANGSTROM. Or the number of the first organic layers, the thickness of the first organic layers, the number of the second organic layers, the thickness of the second organic layers, the number of the third organic layers, the thickness of the third organic layers, (EML) 234 from the reflective surface of the first electrode 202 regardless of the number of the light emitting layers, the thickness of the first light emitting layer, the number of the second light emitting layers, and the thickness of the second light emitting layer (L3) can be set to be within a range of 2,400 to 3,000 angstroms.

All layers such as the third emission layer (EML) 234, the third electron transport layer (ETL) 236, the hole blocking layer (HBL), and the electron injection layer (EIL) may be referred to as an organic layer. All organic layers between the third emission layer (EML) 234 and the second electrode 204 and the second electrode 204 may be referred to as an organic layer. Accordingly, all of the organic layers, including the second electrode 204, between the third emission layer (EML) 234 and the second electrode 204 may be referred to as a fourth organic layer.

(HBL), regardless of the number or thickness of the third electron transport layer (ETL) 236 or the number or thickness of the electron injection layer (EIL) or the number or thickness of the hole blocking layer Regardless of the number or thickness of the electrodes 204 or the number or thickness of the first light emitting layer (EML) 214 or the number or thickness of the second light emitting layer (EML) 224, (EML) 234, regardless of the number or thickness of all the organic layers between the substrate 201 and the first light emitting layer (EML) 214, or the thickness of the first light emitting layer (EML) 224 and the third emission layer (EML) 234, regardless of the number or thickness of all the organic layers between the first emission layer (EML) 214 and the second emission layer (EML) (EML) 234 and the second electrode 204, regardless of the number or thickness of all the organic layers between the first emission layer (EML) 234 and the second electrode 204 Regardless of the thickness, position (L0) of the second electrode 204 from the first electrode 202 may be set so as to be positioned in the range of 4,700Å to 5,400Å. Alternatively, the position L0 of the second electrode 204 may be set to be within a range of 4,700 A to 5,400 A from the reflective surface of the first electrode 202. Therefore, the number of the at least one first organic layer, the thickness of the first organic layer, the number of the second organic layers, the thickness of the second organic layer, the number of the third organic layers, the thickness of the third organic layer, The number of the first light emitting layers, the number of the organic layers, the thickness of the fourth organic layer, the number of the first light emitting layers, the thickness of the first light emitting layer, the number of the second light emitting layers, The position L0 of the second electrode 204 can be set within a range of 4,700 to 5,400 angstroms from the first electrode 202 regardless of the thickness of the first electrode 202. [ Or the number of the at least one first organic layer, the thickness of the first organic layer, the number of the second organic layers, the thickness of the second organic layer, the number of the third organic layers, the thickness of the third organic layer, The number of the first light emitting layers, the number of the organic layers, the thickness of the fourth organic layer, the number of the first light emitting layers, the thickness of the first light emitting layer, the number of the second light emitting layers, The position L0 of the second electrode 204 can be set to be within a range of 4,700 A to 5,400 A from the reflective surface of the first electrode 202 regardless of the thickness of the first electrode 202.

The structure shown in FIG. 16 shows an example of the present invention. The structure shown in FIG. 16 can be selectively formed according to the structure and characteristics of the white organic light emitting device, but is not limited thereto.

17 is a view showing a light emitting position of an organic light emitting diode according to a fifth embodiment of the present invention.

In FIG. 17, the abscissa represents the wavelength region of light, and the ordinate represents the emission position of the light emitting layers constituting the light emitting portion from the first electrode 202, which may be referred to as a contour map. Here, except for the first electrode 202 and the second electrode 204, the emission positions of the light emitting layers in the emission peak at the application of the EPEL structure of the present invention are shown. The light emitting regions of the light emitting layers have the maximum light emitting range.

The first light emitting layer (EML) 214 constituting the first light emitting portion 210 is a blue light emitting layer. Therefore, the peak wavelength range of the light emitting region of the first light emitting layer (EML) May range from 440 nm to 480 nm. It is necessary to emit light at 440 nm to 480 nm which is a light emitting region of a blue light emitting layer, so that maximum efficiency can be obtained in a white region of a contour map.

Accordingly, the emission position of the first emission layer (EML) 214 is set in the range of 150 to 650 占 and the emission peak 214E is positioned in the range of 440 nm to 480 nm. As a result, light can be emitted from the first emission layer (EML) 214 at 440 nm to 480 nm, thereby achieving maximum efficiency.

The blue light emitting layer may include one of a blue light emitting layer, a deep blue light emitting layer, and a sky blue light emitting layer.

A yellow-green or red light-emitting layer or a green light-emitting layer is formed as an auxiliary light-emitting layer in the first light-emitting layer (EML) 214 constituting the first light-emitting portion 210 The peak wavelength range of the emission region of the first emission layer (EML) 214 may range from 440 nm to 650 nm. Therefore, in this case, it is necessary to emit light at 440 nm to 650 nm, which is the light emitting region of the first light emitting layer (EML) 214, so that maximum efficiency can be obtained in the white region of the contour map.

In FIG. 17, the first light emitting layer (EML) 214 does not include an auxiliary light emitting layer, and the first light emitting layer (EML) 214 shows a light emitting position using a blue light emitting layer as an example. Therefore, the peak wavelength range of the emission region of the first emission layer (EML) 214 can reach the maximum efficiency in the range of 440 nm to 480 nm.

Since the second emission layer (EML) 224 of the second emission layer 220 is a yellow-green emission layer, the peak emission wavelength of the emission region of the second emission layer (EML) peak wavelength range may range from 510 nm to 580 nm. It is necessary to emit light at 510 nm to 580 nm which is a light emitting region of a yellow-green light emitting layer, thereby achieving maximum efficiency in a white region of a contour map.

Therefore, the light emitting position of the second emission layer (EML) 224 is set in the range of 1,700 Å to 2,300 Å, so that the emission peak 224E of the second emission layer (EML) 224 is 510 nm to 580 Nm. Accordingly, the second light emitting layer (EML) 224 emits light at 510 nm to 580 nm, thereby achieving the maximum efficiency.

The second light emitting layer (EML) 224 of the second light emitting portion 220 may be composed of two layers, a red light emitting layer and a green light emitting layer, depending on the characteristics and structure of the device. The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. The peak wavelength of the luminescent region of the green light emitting layer may be in the range of 510 nm to 560 nm. Therefore, in this case, it is necessary to emit light at 510 nm to 650 nm which is the light emitting region of the second light emitting layer (EML) 224, so that the maximum efficiency can be obtained in the white region of the contour map.

The second light emitting layer (EML) 224 of the second light emitting portion 220 may include two layers of a red light emitting layer and a yellow-green light emitting layer depending on the characteristics and structure of the device. can do. The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. The peak wavelength of the light emitting region of the yellow-green light emitting layer may be in the range of 510 nm to 580 nm. Therefore, in this case, it is necessary to emit light at 510 nm to 650 nm which is the light emitting region of the second light emitting layer (EML) 224, so that the maximum efficiency can be obtained in the white region of the contour map.

The second light emitting layer (EML) 224 of the second light emitting portion 220 may include two layers of a yellow light emitting layer and a red light emitting layer depending on the characteristics and structure of the device. The peak wavelength of the light emitting region of the yellow light emitting layer may be in the range of 540 nm to 580 nm. The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. Therefore, in this case, it is necessary to emit light at 540 nm to 650 nm, which is an emission region of the second emission layer (EML) 224, so that maximum efficiency can be obtained in the white region of the contour map.

Accordingly, a yellow-green light-emitting layer, a yellow light-emitting layer, a red light-emitting layer, a red light-emitting layer, and a green light-emitting layer are formed as the second light-emitting layer (EML) A peak wavelength range of the luminescent region of the second emission layer (EML) 224 is 510 (nm), and the emission wavelength of the second emission layer (EML) Nm to 650 nm. In this case, it is necessary to emit light at 510 nm to 650 nm which is a light emitting region of the second light emitting layer (EML) 224, so that maximum efficiency can be obtained in the white region of the contour map.

In FIG. 17, the second light emitting layer (EML) 224 does not include an auxiliary light emitting layer in the second light emitting layer (EML) 224, and a light emitting position is shown using a yellow-green light emitting layer as an example. Therefore, the peak wavelength range of the emission region of the second emission layer (EML) 224 can exhibit the maximum efficiency in the range of 510 nm to 580 nm.

The third light emitting layer (EML) 234 constituting the third light emitting portion 230 is a blue light emitting layer. Therefore, the peak wavelength range of the light emitting region of the third light emitting layer (EML) May range from 440 nm to 480 nm. It is necessary to emit light at 440 nm to 480 nm which is a light emitting region of a blue light emitting layer, so that maximum efficiency can be obtained in a white region of a contour map.

Therefore, when the emission position of the third emission layer (EML) 234 is set in the range of 2,400 Å to 3,000 Å, the emission peak 234E of the third emission layer (EML) 234 is in the range of 440 nm to 480 Nm. Thus, the third emission layer (EML) 234 emits light at 440 nm to 480 nm, thereby achieving maximum efficiency.

The blue light emitting layer may include one of a blue light emitting layer, a deep blue light emitting layer, and a sky blue light emitting layer.

A yellow-green or red light-emitting layer or a green light-emitting layer is formed as an auxiliary light-emitting layer in the third light-emitting layer (EML) 234 constituting the third light-emitting portion 230 , The peak wavelength range of the emission region of the third emission layer (EML) 234 may range from 440 nm to 650 nm. Therefore, in this case, it is necessary to emit light at 440 to 650 nm, which is the light emitting region of the third light emitting layer (EML) 234, so that the maximum efficiency can be obtained in the white region of the contour map.

In FIG. 17, the third light emitting layer (EML) 234 does not include an auxiliary light emitting layer, and the third light emitting layer (EML) 234 shows a light emitting position using a blue light emitting layer as an example. Therefore, the peak wavelength range of the emission region of the third emission layer (EML) 234 can exhibit the maximum efficiency in the range of 440 nm to 480 nm.

As described above, the position of the emission peak changes according to the emission position of the emission layer. The present invention applies an emission position of emission (EPEL) structure in which the emission peak of the emission layer is positioned in a desired emission region by setting the emission position of the emission layer constituting the emission portion.

Accordingly, the emission peak is positioned at a specific wavelength by applying the emission position of the emission layer (EPEL) structure to the emission layer, so that the emission layers can maximize efficiency in the light corresponding to a specific wavelength.

A maximum emission range of the light emitting layers in the emission region having the specific wavelength can be referred to as a maximum emission range. The maximum emission range of the first emission layer is 440 nm to 470 nm, the maximum emission range of the second emission layer is 530 nm to 570 nm, and the maximum emission range of the third emission layer is 440 nm to 470 nm.

That is, in order to emit light at 440 nm to 470 nm, which is the maximum emission range of the blue emission layer, and 530 nm to 570 nm, which is the maximum emission range of the yellow-green emission layer, The maximum efficiency can be achieved in the white area. It can be seen that the light emitting layer can achieve the maximum efficiency by setting the light emitting position of the light emitting layer of the present invention to correspond to the light emitting region. The EPEL structure of the present invention is characterized in that the number of the first organic layers, the thickness of the first organic layers, the number of the second organic layers, the thickness of the second organic layers, the number of the third organic layers, The thickness of the fourth organic layer, the thickness of the fourth organic layer, the number of the first light emitting layer, the thickness of the first light emitting layer, the number of the second light emitting layer, the thickness of the second light emitting layer, The first light emitting layer, the second light emitting layer, and the third light emitting layer have a maximum light emitting range regardless of the thickness of the third light emitting layer, so that the light emitting layer can achieve the maximum efficiency.

18 is a diagram showing an EL spectrum according to the fifth embodiment of the present invention.

In FIG. 18, the abscissa represents the wavelength region of light, and the ordinate represents the intensity of light. The emission intensity is a relative value based on the maximum value of the EL spectrum.

In FIG. 18, the embodiment (minimum position) is a portion set to the minimum position when the light emitting positions of the light emitting layers are set. For example, when the emission position L1 of the first emission layer (EML) 214 is in the range of 150 to 650 angstroms from the first electrode 202, the minimum position is set to 150 angstroms.

The embodiment (maximum position) is a portion set to the maximum position when the light emitting positions of the light emitting layers are set. For example, when the emission position L1 of the first emission layer (EML) 214 is in the range of 150 to 650 angstroms from the first electrode 102, the maximum position is set to 650 angstroms.

The embodiment (optimum position) is a portion set to the light emitting position of the fifth embodiment of the present invention. For example, when the emission position L1 of the first emission layer (EML) 214 is in the range of 150 to 650 angstroms from the second electrode 202, the emission position of the embodiment is set in the range of 150 to 650 angstroms .

As shown in FIG. 18, when the minimum position of the emission position is deviated from the optimum position in the EPEL (Emission Position of Emitting Layers) structure of the present invention, it is as follows. The emission intensity decreases at 440 nm to 480 nm, which is the peak wavelength range of blue light. It can be seen that the luminescence intensity decreases in the range of 510 nm to 580 nm, which is the peak wavelength range of the yellow-green light. It can be seen that the luminescence intensity is remarkably decreased at 600 nm to 650 nm, which is the peak wavelength range of red light.

In the EPEL (Emission Position of Emitting Layers) structure of the present invention, when the maximum position of the emission position is deviated, the optimum position is as follows. The emission intensity decreases at 440 nm to 480 nm, which is the peak wavelength range of blue light. It can be seen that the luminescence intensity decreases in the range of 510 nm to 580 nm, which is the peak wavelength range of the yellow-green light.

Accordingly, it can be seen that the emission intensity increases in the peak wavelength range of blue light when the optimum position of the present invention is set, compared with the case where the minimum or maximum position of the embodiment is set. Further, it can be seen that the emission intensity increases in the peak wavelength range of yellow-green light when the optimum position of the present invention is set to the minimum position or the maximum position of the embodiment. It can be seen that the emission intensity is increased in the peak wavelength range of red light when it is set to the optimum position of the present invention.

The panel efficiency of the white organic light emitting device and the comparative example using the EPEL (Emission Position of Emitting Layers) structure of the present invention are as shown in Table 9 below. And the efficiency of the comparative example is 100%, the efficiency of the fifth embodiment of the present invention is shown.

In Table 9 below, the comparative example is a bottom emission type white organic light emitting device including a first light emitting portion, a second light emitting portion and a third light emitting portion, wherein the first light emitting portion is a blue light emitting layer, A yellow-green light-emitting layer, and a third light-emitting portion is a blue light-emitting layer. The embodiment is a top emission type white organic light emitting device when an optimum position of an EPEL (Emission Position of Emitting Layers) structure of the present invention is applied.

As shown in Table 9, when the efficiency of the comparative example was 100% when the EPEL (Emission Position of Emitting Layers) structure of the present invention was compared to the comparative example, the red efficiency was increased by 39% Green efficiency increased by 63%. The blue efficiency increased by 47% and the white efficiency increased by 61%.

The panel efficiency of the white organic light emitting device and the comparative example using the EPEL (Emission Position of Emitting Layers) structure of the present invention are as shown in Table 10 below.

Table 10 below shows the efficiencies of the embodiment (minimum position) and the embodiment (maximum position) when the efficiency of the embodiment (optimum position) is taken as 100%.

The panel efficiency was measured when the driving current density was 10 mA / cm ² . When the panel efficiency of the embodiment is 100%, the panel efficiency of the embodiment (minimum position) and the embodiment (maximum position) are measured.

As shown in Table 10, the efficiency of red, green, blue, and white is reduced at the boundary between the embodiment (minimum position) and the embodiment (maximum position) . In Table 8 of the fourth embodiment of the present invention and Table 10 of the fifth embodiment of the present invention, it is understood that green (G), blue (Blue), and blue ) And white efficiency are further improved. Therefore, according to the fifth embodiment of the present invention, it is possible to provide an organic light emitting display device with improved efficiency. It can be seen that the efficiencies of Red, Green, Blue and White are further reduced in the embodiment (minimum position) than in the embodiment (maximum position). Therefore, it can be seen that the panel efficiency decreases when the emission position of the EPEL structure of the present invention deviates from the optimum position.

As described in the fifth embodiment of the present invention, the organic light emitting device may be an organic light emitting device of a top emission type.

The position of the second electrode may be set in a range of 4,700 A to 5,400 A from the first electrode.

The light emitting position of the first light emitting layer may be set to a range of 150 to 650 ANGSTROM from the first electrode.

The light emitting position of the second light emitting layer may be set in a range of 1,700 Å to 2,300 Å from the first electrode.

The light emitting position of the third light emitting layer may be set in a range of 2,400 to 3,000 angstroms from the first electrode.

The first light emitting layer may include a blue light emitting layer, a blue light emitting layer and a yellow-green light emitting layer, or a blue light emitting layer and a red light emitting layer, or a blue light emitting layer and a green light emitting layer, or a combination thereof.

The second light emitting layer may include a yellow-green light emitting layer, or a yellow light emitting layer and a red light emitting layer, or a red light emitting layer and a green light emitting layer, or a yellow-green light emitting layer and a red light emitting layer, or a combination thereof.

The third light emitting layer may be a blue light emitting layer, or a blue light emitting layer and a yellow-green light emitting layer, or a blue light emitting layer and a red light emitting layer, or a blue light emitting layer and a green light emitting layer, or a combination thereof.

The light emitting region of the first light emitting layer may range from 440 nm to 650 nm, the light emitting region of the second light emitting layer may range from 510 nm to 650 nm, and the light emitting region of the third light emitting layer may range from 440 nm to 650 nm.

The maximum emission range of the first emission layer is in the range of 440 nm to 470 nm, the maximum emission range of the second emission layer is in the range of 530 nm to 570 nm, and the maximum emission range of the third emission layer is in the range of 440 nm to 470 nm .

As described above, it can be seen that the emission intensity of the light emitting layer can be increased when the EPEL (Emission Position of Emitting Layers) structure of the present invention is applied. Further, it can be seen that the panel efficiency is improved because the emission intensity is increased.

19 is a schematic view showing a white organic light emitting device according to a sixth embodiment of the present invention. In describing the present embodiment, description of the same or corresponding elements to those of the previous embodiment will be omitted. In this embodiment, the light emitting position of the light emitting layers is set from the second electrode, and the light emitting position can be set from the second electrode according to the device design.

The white organic light emitting device 200 shown in FIG. 19 includes a first light emitting portion 210 and a second light emitting portion 210 between a first electrode 202 and a second electrode 204, and first and second electrodes 202 and 204, (220) and a third light emitting portion (230).

The position of the first electrode 202 is set to be within a range of 4,700 A to 5,400 A from the second electrode 204. The emission peak of the light emitting layers constituting the first, second and third light emitting units 210, 220 and 230 is set by setting the position L0 of the first electrode 202, Can be positioned at a specific wavelength, and the efficiency of the light emitting layers can be improved by emitting light of the specific wavelength.

The third light emitting part 230 includes a third electron transport layer (ETL) 236, a third emission layer (EML) 234 and a third hole transport layer (HTL) 232 under the second electrode 204 . Although not shown in the drawing, an electron injection layer (EIL) may be further formed on the third electron transport layer (ETL) 236. A hole injection layer (HIL) may be further formed under the third hole transport layer (HTL) 232. A hole blocking layer (HBL) may further be formed on the third emission layer (EML) 234. The third electron transport layer (ETL) 236 and the hole blocking layer HBL may be formed as a single layer.

An electron blocking layer (EBL) may be further formed under the third emission layer (EML) 234. The third hole transporting layer (HTL) 232 and the electron blocking layer EBL may be formed as one layer.

The third emission layer (EML) 234 may include a blue emission layer or a blue emission layer including an auxiliary emission layer capable of emitting a different color. The blue light emitting layer may include one of a blue light emitting layer, a deep blue light emitting layer, and a sky blue light emitting layer. Since the deep blue light emitting layer is located in a shorter wavelength region than the blue light emitting layer, the deep blue light emitting layer can be advantageous for improving the color reproduction rate and brightness.

The auxiliary light-emitting layer may be composed of one or a combination of a yellow-green light-emitting layer, a red light-emitting layer, and a green light-emitting layer. When the auxiliary light-emitting layer is further formed, the emission efficiency of the green light-emitting layer and the red light-emitting layer can be further improved. When forming the third light emitting layer (EML) 234 including the auxiliary light emitting layer, the yellow-green light emitting layer or the red light emitting layer or the green light emitting layer is formed as the third light emitting layer (EML) 234, respectively. Further, the yellow-green or red light-emitting layer or the green light-emitting layer, which is the auxiliary light-emitting layer, may be constituted similarly or differently on the third light-emitting layer (EML) 234 It is possible. The position and the number of the light emitting layer can be selectively arranged depending on the configuration and characteristics of the device, and the present invention is not limited thereto.

When the auxiliary light emitting layer is formed in the third light emitting layer (EML) 234, the peak wavelength of the light emitting region of the third light emitting layer (EML) 234 may be in the range of 440 nm to 650 nm. have. Here, the peak wavelength may be a light emitting region.

All layers such as the third electron transport layer (ETL) 236, the third emission layer (EML) 234, the electron injection layer (EIL), and the hole blocking layer (HBL) may be referred to as an organic layer. The organic layer may include all organic layers located between the second electrode 204 and the third emission layer (EML) 234, the second electrode 204 and the third emission layer (EML) 234 . Accordingly, all the organic layers located between the second electrode 204 and the third emission layer (EML) 234 may be referred to as a fourth organic layer.

Irrespective of the number or thickness of the third electron transport layer (ETL) 236 or irrespective of the number or thickness of the third emission layer (EML) 234 or the number or thickness of the electron injection layer (EIL) Or between the second electrode 204 and the third emission layer (EML) 234, regardless of the number or thickness of the hole blocking layer (HBL) or the number or thickness of the second electrode 204, The light emitting position L3 of the third light emitting layer (EML) 234 is set to be within a range of 2,050 to 2,750 ANGSTROM from the second electrode 204 regardless of the number or thickness of all the organic layers. The thickness of the third light emitting layer, the thickness of the third light emitting layer, and the thickness of the third light emitting layer (from the second electrode 204) to the third light emitting layer EML) 234 is set to be within a range of 2,050 A to 2,750 ANGSTROM. So as to position the

The second light emitting portion 220 may include a second HTL 222, a second EML 224, and a second ETL 226.

A hole injection layer (HIL) may be further formed under the second hole transport layer (HTL) 222. A hole blocking layer (HBL) may be additionally formed on the second emission layer (EML) 224. The second electron transport layer (ETL) 226 and the hole blocking layer HBL may be formed as a single layer.

An electron blocking layer (EBL) may be further formed under the second emission layer (EML) The second hole transport layer (HTL) 222 and the electron blocking layer EBL may be formed as one layer.

The second emission layer (EML) 224 is composed of a yellow-green emission layer. The peak wavelength of the light emitting region of the yellow-green light emitting layer may be in the range of 510 nm to 580 nm. Here, the peak wavelength may be a light emitting region.

The second emission layer (EML) 224 may include a yellow-green emission layer or a yellow emission layer and a red emission layer or a red emission layer and a green emission layer, A yellow-green light-emitting layer and a red light-emitting layer, or a combination thereof. When a red light-emitting layer is further formed in the yellow-green light-emitting layer, the efficiency of the red light-emitting layer can be further improved. The red light-emitting layer may be formed above or below the yellow-green light-emitting layer.

The yellow light-emitting layer and the red light-emitting layer, or the red light-emitting layer and the green light-emitting layer, or the yellow-green light-emitting layer and the red light- (EML) 224, as shown in FIG. The yellow light-emitting layer and the red light-emitting layer, or the red light-emitting layer and the green light-emitting layer, or the yellow-green light-emitting layer and the red light- EML) 224, or may be configured differently.

The peak wavelength of the light emitting region of the yellow light emitting layer may be in the range of 540 nm to 580 nm. The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. Therefore, the peak wavelength of the light emitting region of the yellow light emitting layer and the red light emitting layer of the second light emitting layer (EML) 224 may be in the range of 540 nm to 650 nm. Here, the peak wavelength may be a light emitting region. The light emitting efficiency of the red light emitting layer can be increased when the light emitting layer is composed of two layers of the yellow light emitting layer and the red light emitting layer.

The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. The peak wavelength of the luminescent region of the green light emitting layer may be in the range of 510 nm to 560 nm. Therefore, the peak wavelength of the emission regions of the red and green emission layers of the second emission layer (EML) 224 may be in the range of 510 nm to 650 nm. Here, the peak wavelength may be a light emitting region. When the red light emitting layer and the green light emitting layer are formed of two layers, the color reproducibility can be improved.

The peak wavelength of the light emitting region of the yellow light emitting layer may be in the range of 540 nm to 580 nm. The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. Therefore, the peak wavelength of the light emitting region of the yellow light emitting layer and the red light emitting layer of the second light emitting layer (EML) 224 may be in the range of 540 nm to 650 nm. Here, the peak wavelength may be a light emitting region. The light emitting efficiency of the red light emitting layer can be increased when the light emitting layer is composed of two layers of the yellow light emitting layer and the red light emitting layer.

The second light emitting layer (EML) 224 of the second light emitting portion 220 may include two layers of a red light emitting layer and a yellow-green light emitting layer depending on the characteristics and structure of the device. can do. The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. The peak wavelength of the light emitting region of the yellow-green light emitting layer may be in the range of 510 nm to 580 nm. When the red light-emitting layer and the yellow-green light-emitting layer are composed of two layers, the light-emitting efficiency of the red light-emitting layer can be increased. In this case, the peak wavelength of the emission region of the second emission layer (EML) 224 may be in the range of 510 nm to 650 nm. Here, the peak wavelength may be a light emitting region.

The second light emitting layer (EML) 124 may be a yellow-green light emitting layer or a yellow light emitting layer and a red light emitting layer or a red light emitting layer and a green light emitting layer, A peak wavelength of the luminescent region of the second emission layer (EML) 124 is 510 nm to 650 nm, and the emission wavelength of the second emission layer (EML) Nm. ≪ / RTI > Here, the peak wavelength may be a light emitting region.

A second charge generating layer (CGL) 250 may be further formed between the second light emitting portion 220 and the third light emitting portion 230. The second charge generation layer (CGL) 250 may include an N-type charge generation layer (N-CGL) and a P-type charge generation layer (P-CGL).

(EML) 224, the second electron transport layer (ETL) 226, the second charge generation layer (CGL) 250, the third hole transport layer (HTL) 232, All layers such as a layer (HBL), an electron blocking layer (EBL), and a hole injection layer (HIL) can be referred to as an organic layer. All the organic layers between the third emission layer (EML) 234 and the second emission layer (EML) 224 and the second emission layer (EML) 224 may be referred to as an organic layer. Accordingly, all organic layers between the third emission layer (EML) 234 and the second emission layer (EML) 224 may be referred to as a third organic layer.

(CGL) 250, regardless of the number or thickness of the third hole transport layer (HTL) 232 or the number or thickness of the second electron transport layer (ETL) 226, Irrespective of the number and thickness of the hole injection layer (HIL), or regardless of the number or thickness of the hole blocking layer (HBL) or the number or thickness of the electron blocking layer (EBL) (EML) 224, regardless of the number or thickness of the third emission layer (EML) 234 or the number or thickness of the second emission layer (EML) Regardless of the number or thickness of all the organic layers between the second emission layer (EML) 224 and the third emission layer (EML) 234, The emission position L2 of the second emission layer (EML) 224 is set to be within a range of 2,850 Å to 3,550 Å from the second electrode 204 do.

Therefore, the number of the at least one fourth organic layer, the thickness of the fourth organic layer, the number of the third organic layers, the thickness of the third organic layer, the number of the third light emitting layers, the thickness of the third light emitting layer, The position L2 of the second light emitting layer (EML) 224 from the second electrode 204 can be set to be within a range of 2,850 to 3,550 ANGSTROM regardless of the number of the light emitting layers and the thickness of the second light emitting layer .

The first light emitting part 210 includes a first hole transport layer (HTL) 212, a first emission layer (EML) 214, and a first electron transport layer (ETL) 216 on the first electrode 202 . An auxiliary electrode 203 may be formed on the first electrode 202. However, the auxiliary electrode 203 may not be formed depending on the characteristics and structure of the device.

Although not shown in the drawing, the first light emitting portion 210 may further include a hole injection layer (HIL) under the first hole transport layer (HTL) 212. A hole blocking layer (HBL) may further be formed on the first emission layer (EML) 214. The first electron transport layer (ETL) 216 and the hole blocking layer HBL may be formed as one layer.

An electron blocking layer (EBL) may be further formed under the first emission layer (EML) 214. The first hole transport layer (HTL) 212 and the electron blocking layer EBL may be formed as one layer.

The first light emitting layer (EML) 214 is composed of a blue light emitting layer or a blue light emitting layer including an auxiliary light emitting layer capable of emitting different colors. The blue light emitting layer may include one of a blue light emitting layer, a deep blue light emitting layer, and a sky blue light emitting layer. Since the deep blue light emitting layer is located in a shorter wavelength region than the blue light emitting layer, the deep blue light emitting layer can be advantageous for improving the color reproduction rate and brightness.

The auxiliary light-emitting layer may be composed of one or a combination of a yellow-green light-emitting layer, a red light-emitting layer, and a green light-emitting layer. When the auxiliary light-emitting layer is further formed, the luminous efficiency of the green light-emitting layer and the red light-emitting layer can be further improved. When forming the first light emitting layer (EML) 214 including the auxiliary light emitting layer, the yellow-green light emitting layer or the red light emitting layer or the green light emitting layer may be formed in the first light emitting layer (EML) ) 214 on the lower surface of the substrate 210. A yellow-green light emitting layer, a red light emitting layer or a green light emitting layer, which is the auxiliary light emitting layer, may be formed on the first light emitting layer (EML) It is also possible. The position and the number of the light emitting layer can be selectively arranged depending on the configuration and characteristics of the device, and the present invention is not limited thereto.

When the auxiliary light emitting layer is formed in the first light emitting layer (EML) 214, the peak wavelength of the light emitting region of the first light emitting layer (EML) 214 may be in the range of 440 nm to 650 nm. have. Here, the peak wavelength may be a light emitting region.

A first charge generating layer (CGL) 240 may be further formed between the first light emitting portion 210 and the second light emitting portion 220. The first charge generation layer (CGL) 240 may include an N-type charge generation layer (N-CGL) and a P-type charge generation layer (P-CGL).

(EML) 214, the first electron transport layer (ETL) 216, the first charge generation layer (CGL) 240, the second hole transport layer 222, the HBL , The electron blocking layer (EBL), the hole injection layer (HIL), and the like can be referred to as an organic layer. All the organic layers between the first emission layer (EML) 214 and the second emission layer (EML) 224 and the first emission layer (EML) 214 may be referred to as an organic layer. Accordingly, all of the organic layers between the first emission layer (EML) 214 and the second emission layer (EML) 224 may be referred to as a second organic layer.

(HTL) 222, regardless of the number or thickness of the first electron transport layer (ETL) 216 or the number or thickness of the first charge generation layer (CGL) 240 or the thickness of the second hole transport layer Irrespective of the number and thickness of the hole injection layer (HIL), or regardless of the number or thickness of the hole blocking layer (HBL) or the number or thickness of the electron blocking layer (EBL) The number or thickness of the third light emitting layer (EML) 234 or the number or thickness of the first light emitting layer (EML) 234, or the number or thickness of the second light emitting layer (EML) Regardless of the number or thickness of all the organic layers between the second electrode 204 and the third emission layer (EML) 234, or between the second emission layer (EML) 224 and the third emission layer (EML) 234, or between the first emission layer (EML) 214 and the second emission layer (EML) 224, regardless of the number or thickness of all the organic layers between the first emission layer The emission position L1 of the first emission layer (EML) 214 is set to be within a range of 4,450 to 5,000 ANGSTROM from the second electrode 204 regardless of the number and thickness of all the organic layers.

Therefore, the number of the at least one fourth organic layer, the thickness of the fourth organic layer, the number of the third organic layers, the thickness of the third organic layer, the number of the second organic layers, the thickness of the second organic layer, Regardless of the number of the light emitting layers, the thickness of the third light emitting layer, the number of the second light emitting layers, the thickness of the second light emitting layer, the number of the first light emitting layers, and the thickness of the first light emitting layer, The position L1 of the first light emitting layer (EML) 214 may be set to be within a range of 4,450 to 5,000 ANGSTROM.

All layers such as the auxiliary electrode 203, the first hole transport layer (HTL) 212, the electron blocking layer (EBL), and the hole injection layer (HIL) may be referred to as an organic layer. All organic layers between the first electrode 202 and the first emission layer (EML) 214 and the first emission layer (EML) 214 may be referred to as an organic layer. Accordingly, all of the organic layers between the first electrode 202 and the first emission layer (EML) 214 can be referred to as a first organic layer.

Regardless of the number or thickness of the auxiliary electrode 203 or the number or thickness of the first hole transporting layer (HTL) 212 or the number or thickness of the electron blocking layer (EBL) (EML) 224, regardless of the number or thickness of the second light emitting layer (EML) 224, or the number or thickness of the third light emitting layer (EML) 234, Regardless of the number or thickness of the light emitting layer (EML) 214 or the number or thickness of all the organic layers between the second electrode 204 and the third light emitting layer (EML) 234, (EML) 214 and the second light emitting layer (EML) 224, regardless of the number or thickness of all the organic layers between the first light emitting layer (EML) 224 and the third light emitting layer (EML) ) Or between the first electrode 202 and the first emission layer (EML) 214, regardless of the number or thickness of all the organic layers between the first electrode 202 and the first electrode 202, The number, regardless of the thickness, position (L0) of the first electrode 202 may be set so as to be positioned in the range of 4,700Å to 5,400Å from the second electrode (204).

Therefore, the number of the at least one fourth organic layer, the thickness of the fourth organic layer, the number of the third organic layers, the thickness of the third organic layer, the number of the second organic layers, Wherein the number of the first organic layers, the thickness of the first organic layer, the number of the third light emitting layers, the thickness of the third light emitting layer, the number of the second light emitting layers, the thickness of the second light emitting layer, The position (L0) of the first electrode 202 from the second electrode 204 can be set to be within a range of 4,700 to 5,400 占 regardless of the thickness of the light emitting layer.

Here, the light emitting position L1 of the first light emitting layer (EML) 214 may be set to be within a range of 4,450 Å to 5,000 Å from the second electrode 204. The position (L0) of the first electrode 202 may be set to be within a range of 4,700 A to 5,400 A from the second electrode 204. When the light emitting position L1 of the first emission layer 214 is set to 5,000 ANGSTROM from the second electrode 204, the position L0 of the first electrode 202 is changed to the position of the second electrode 204 204 in the range of 5,050 to 5,400 angstroms.

Accordingly, the present invention provides a method of manufacturing a light emitting device, comprising the steps of: preparing a first organic layer, a second organic layer, a second organic layer, The number of the third organic layers, the thickness of the fourth organic layer, the number of the first light emitting layers, the thickness of the first light emitting layer, the number of the second light emitting layers, the thickness of the second light emitting layer, The positions of the first electrode 202 and the positions of the light emitting layers can be set from the second electrode 204 regardless of the thickness of the third light emitting layer.

The structure shown in FIG. 19 shows an example of the present invention. The structure shown in FIG. 19 can be selectively formed according to the structure and characteristics of the white organic light emitting device, but is not limited thereto.

20 is a view showing a light emitting position of an organic light emitting diode according to a sixth embodiment of the present invention.

In FIG. 20, the abscissa represents the wavelength region of light, and the ordinate represents the emission position of the light emitting layers constituting the light emitting portion from the second electrode 204, which may be referred to as a contour map. Here, except for the first electrode 202 and the second electrode 204, the emission positions of the light emitting layers in the emission peak at the application of the EPEL structure of the present invention are shown. The light emitting regions of the light emitting layers have the maximum light emitting range. 20 shows the light emitting positions of the light emitting layers except for the thickness of the second electrode 204 of 1,000 Å, and the thickness of the second electrode 204 does not limit the present invention.

The third light emitting layer (EML) 234 constituting the third light emitting portion 230 is a blue light emitting layer. Therefore, the peak wavelength range of the light emitting region of the third light emitting layer (EML) May range from 440 nm to 480 nm. It is necessary to emit light at 440 nm to 480 nm which is a light emitting region of a blue light emitting layer, so that maximum efficiency can be obtained in a white region of a contour map.

Therefore, the emission position of the third emission layer (EML) 234 is set in the range of 2,050 Å to 2,750 Å, so that the emission peak 234E of the third emission layer (EML) 234 is in the range of 440 nm to 480 Nm. Thus, the third emission layer (EML) 234 emits light at 440 nm to 480 nm, thereby achieving maximum efficiency. 20, the light emitting position of the third emission layer (EML) 234 is shown as 1,050 Å to 1,750 Å, which is a value obtained by subtracting 1,000 Å, which is the thickness of the second electrode 204. Accordingly, the emission position of the third emission layer (EML) 234 may range from 2,050 A to 2,750 A from the second electrode 204. The same can be applied to the emission position of the second emission layer (EML) 224 and the emission position of the first emission layer (EML) 214.

The blue light emitting layer may include one of a blue light emitting layer, a deep blue light emitting layer, and a sky blue light emitting layer.

A yellow-green or red light-emitting layer or a green light-emitting layer is formed as an auxiliary light-emitting layer in the third light-emitting layer (EML) 234 constituting the third light-emitting portion 230 , The peak wavelength range of the emission region of the third emission layer (EML) 234 may range from 440 nm to 650 nm. Therefore, in this case, it is necessary to emit light at 440 to 650 nm, which is the light emitting region of the third light emitting layer (EML) 234, so that the maximum efficiency can be obtained in the white region of the contour map.

In FIG. 20, the third light emitting layer (EML) 234 does not include an auxiliary light emitting layer, and the third light emitting layer (EML) 234 shows a light emitting position using a blue light emitting layer as an example. Therefore, the peak wavelength range of the emission region of the third emission layer (EML) 234 can exhibit the maximum efficiency in the range of 440 nm to 480 nm.

Since the second emission layer (EML) 224 of the second emission layer 220 is a yellow-green emission layer, the peak emission wavelength of the emission region of the second emission layer (EML) peak wavelength range may range from 510 nm to 580 nm. It is necessary to emit light at 510 nm to 580 nm which is a light emitting region of a yellow-green light emitting layer, thereby achieving maximum efficiency in a white region of a contour map.

Therefore, the emission position of the second emission layer (EML) 224 is set in the range of 2,850 Å to 3,550 Å, so that the emission peak 224E of the second emission layer (EML) Nm. Accordingly, the second light emitting layer (EML) 224 emits light at 510 nm to 580 nm, thereby achieving the maximum efficiency.

The second light emitting layer (EML) 224 of the second light emitting portion 220 may be composed of two layers, a red light emitting layer and a green light emitting layer, depending on the characteristics and structure of the device. The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. The peak wavelength of the luminescent region of the green light emitting layer may be in the range of 510 nm to 560 nm. Therefore, in this case, it is necessary to emit light at 510 nm to 650 nm which is the light emitting region of the second light emitting layer (EML) 224, so that the maximum efficiency can be obtained in the white region of the contour map.

The second light emitting layer (EML) 224 of the second light emitting portion 220 may include two layers of a red light emitting layer and a yellow-green light emitting layer depending on the characteristics and structure of the device. can do. The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. The peak wavelength of the light emitting region of the yellow-green light emitting layer may be in the range of 510 nm to 580 nm. Therefore, in this case, it is necessary to emit light at 510 nm to 650 nm which is the light emitting region of the second light emitting layer (EML) 224, so that the maximum efficiency can be obtained in the white region of the contour map.

The second light emitting layer (EML) 224 of the second light emitting portion 220 may include two layers of a yellow light emitting layer and a red light emitting layer depending on the characteristics and structure of the device. The peak wavelength of the light emitting region of the yellow light emitting layer may be in the range of 540 nm to 580 nm. The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. Therefore, in this case, it is necessary to emit light at 540 nm to 650 nm, which is an emission region of the second emission layer (EML) 224, so that maximum efficiency can be obtained in the white region of the contour map.

Accordingly, a yellow-green light-emitting layer, a yellow light-emitting layer, a red light-emitting layer, a red light-emitting layer, and a green light-emitting layer are formed as the second light-emitting layer (EML) A peak wavelength range of the luminescent region of the second emission layer (EML) 224 is 510 (nm), and the emission wavelength of the second emission layer (EML) Nm to 650 nm.

20 does not include an auxiliary light emitting layer in the second light emitting layer (EML) 224, and the second light emitting layer (EML) 224 shows a light emitting position using a yellow-green light emitting layer as an example. Therefore, the peak wavelength range of the emission region of the second emission layer (EML) 224 can exhibit the maximum efficiency in the range of 510 nm to 580 nm.

The first light emitting layer (EML) 214 constituting the first light emitting portion 210 is a blue light emitting layer. Therefore, the peak wavelength range of the light emitting region of the first light emitting layer (EML) May range from 440 nm to 480 nm. It is necessary to emit light at 440 nm to 480 nm which is a light emitting region of a blue light emitting layer, so that maximum efficiency can be obtained in a white region of a contour map.

Therefore, the emission position of the first emission layer (EML) 214 is set in the range of 4,450 Å to 5,000 Å, and the emission peak 214E is positioned at 440 nm to 480 nm. As a result, light can be emitted from the first emission layer (EML) 214 at 440 nm to 480 nm, thereby achieving maximum efficiency.

The blue light emitting layer may include one of a blue light emitting layer, a deep blue light emitting layer, and a sky blue light emitting layer.

A yellow-green or red light-emitting layer or a green light-emitting layer is formed as an auxiliary light-emitting layer in the first light-emitting layer (EML) 214 constituting the first light-emitting portion 210 The peak wavelength range of the emission region of the first emission layer (EML) 214 may range from 440 nm to 650 nm. Therefore, in this case, it is necessary to emit light at 440 nm to 650 nm, which is the light emitting region of the first light emitting layer (EML) 214, so that maximum efficiency can be obtained in the white region of the contour map.

20 does not include an auxiliary light emitting layer in the first light emitting layer (EML) 214, and the first light emitting layer (EML) 214 shows a light emitting position using a blue light emitting layer as an example. Therefore, the peak wavelength range of the emission region of the first emission layer (EML) 214 can reach the maximum efficiency in the range of 440 nm to 480 nm.

As described above, the position of the emission peak changes according to the emission position of the emission layer. The present invention applies an emission position of emission (EPEL) structure in which the emission peak of the emission layer is positioned in a desired emission region by setting the emission position of the emission layer constituting the emission portion.

Accordingly, the emission peak is positioned at a specific wavelength by applying the emission position of the emission layer (EPEL) structure to the emission layer, so that the emission layers can maximize efficiency in the light corresponding to a specific wavelength.

A maximum emission range of the light emitting layers in the emission region having the specific wavelength can be referred to as a maximum emission range. The maximum emission range of the first emission layer is 440 nm to 470 nm, the maximum emission range of the second emission layer is 530 nm to 570 nm, and the maximum emission range of the third emission layer is 440 nm to 470 nm.

That is, in order to emit light at 440 nm to 470 nm, which is the maximum emission range of the blue emission layer, and 530 nm to 570 nm, which is the maximum emission range of the yellow-green emission layer, The maximum efficiency can be achieved in the white area. It can be seen that the light emitting layer can achieve the maximum efficiency by setting the light emitting position of the light emitting layer of the present invention to correspond to the light emitting region. The EPEL structure of the present invention is characterized in that the number of the first organic layers, the thickness of the first organic layers, the number of the second organic layers, the thickness of the second organic layers, the number of the third organic layers, The thickness of the fourth organic layer, the thickness of the fourth organic layer, the number of the first light emitting layer, the thickness of the first light emitting layer, the number of the second light emitting layer, the thickness of the second light emitting layer, The first light emitting layer, the second light emitting layer, and the third light emitting layer have a maximum light emitting range regardless of the thickness of the third light emitting layer, so that the light emitting layer can achieve the maximum efficiency.

21 is a diagram showing an EL spectrum according to the sixth embodiment of the present invention.

In FIG. 21, the abscissa represents the wavelength region of light, and the ordinate represents the intensity of light. The emission intensity is a relative value based on the maximum value of the EL spectrum.

In FIG. 21, the embodiment (minimum position) is a portion set to the minimum position when the light emitting positions of the light emitting layers are set. For example, when the emission position L3 of the third emission layer (EML) 234 is in the range of 2,050 to 2,750 angstroms from the second electrode 204, the minimum position is set to 2,050 angstroms.

The embodiment (maximum position) is a portion set to the maximum position when the light emitting positions of the light emitting layers are set. For example, when the emission position L3 of the third emission layer (EML) 234 is in the range of 2,050 to 2,750 angstroms from the second electrode 204, the maximum position is set to 2,750 angstroms.

The embodiment (optimum position) is a portion set to the light emitting position of the sixth embodiment of the present invention. For example, when the emission position L3 of the third emission layer (EML) 234 is in the range of 2,050 A to 2,750 A from the second electrode 204, the emission position of the embodiment is in the range of 2,050 A to 2,750 A .

As shown in FIG. 21, when the minimum position of the emission position is deviated from the optimum position in the EPEL (Emission Position of Emitting Layers) structure of the present invention, it is as follows. It can be seen that the luminescence intensity decreases at 440 nm to 480 nm, which is the peak wavelength range of blue light, and is out of the peak wavelength range of blue light. It can be seen that the luminescence intensity decreases in the range of 510 nm to 580 nm, which is the peak wavelength range of the yellow-green light.

In the EPEL (Emission Position of Emitting Layers) structure of the present invention, when the maximum position of the emission position is deviated, the optimum position is as follows. It can be seen that the luminescence intensity decreases at 440 nm to 480 nm, which is the peak wavelength range of blue light, and is out of the peak wavelength range of blue light. It can be seen that the luminescence intensity decreases in the range of 510 nm to 580 nm, which is the peak wavelength range of the yellow-green light. It can be seen that the luminescence intensity is remarkably decreased at 600 nm to 650 nm, which is the peak wavelength range of red light.

Accordingly, it can be seen that the emission intensity increases in the peak wavelength range of blue light when the optimum position of the present invention is set, compared with the case where the minimum or maximum position of the embodiment is set. Further, it can be seen that the emission intensity increases in the peak wavelength range of yellow-green light when the optimum position of the present invention is set to the minimum position or the maximum position of the embodiment. It can be seen that the emission intensity is increased in the peak wavelength range of red light when it is set to the optimum position of the present invention.

The panel efficiency of the white organic light emitting device and the comparative example using the EPEL (Emission Position of Emitting Layers) structure of the present invention are as shown in Table 11 below. And the efficiency of the comparative example is 100%, the efficiency of the sixth embodiment of the present invention is shown.

In Table 11, the comparative example is a bottom emission type white organic light emitting device including a first light emitting portion, a second light emitting portion, and a third light emitting portion, wherein the first light emitting portion is a blue light emitting layer, A yellow-green light-emitting layer, and a third light-emitting portion is a blue light-emitting layer. The embodiment is a top emission type white organic light emitting device when an optimum position of an EPEL (Emission Position of Emitting Layers) structure of the present invention is applied.

As shown in Table 11, when the efficiency of the comparative example is 100% when the EPEL (Emission Position of Emitting Layers) structure of the present invention is compared to the comparative example, the red efficiency is increased by 39% Green efficiency increased by 63%. The blue efficiency increased by 47% and the white efficiency increased by 61%.

The panel efficiency of the white organic light emitting device and the comparative example using the EPEL (Emission Position of Emitting Layers) structure of the present invention are as shown in Table 12 below.

Table 12 below shows the efficiencies of the embodiment (minimum position) and the embodiment (maximum position) when the efficiency of the embodiment (optimum position) is taken as 100%.

The panel efficiency was measured when the driving current density was 10 mA / cm ² . When the panel efficiency of the embodiment is 100%, the panel efficiency of the embodiment (minimum position) and the embodiment (maximum position) are measured.

As shown in Table 12, the efficiency of red, green, blue, and white is reduced at the boundary between the embodiment (minimum position) and the embodiment (maximum position) . It can be seen that the efficiencies of red, green, blue and white are further reduced in the embodiment (maximum position) than in the embodiment (minimum position). Therefore, it can be seen that the panel efficiency decreases when the emission position of the EPEL structure of the present invention deviates from the optimum position.

As described in the sixth embodiment of the present invention, the organic light emitting device may be an organic light emitting device of the top emission type.

The position of the first electrode may be set in a range of 4,700 A to 5,400 A from the second electrode.

The light emitting position of the third light emitting layer can be set in the range of 2,050 Å to 2,750 Å from the second electrode.

The light emitting position of the second light emitting layer can be set in the range of 2,850 Å to 3,550 Å from the second electrode.

The light emitting position of the third light emitting layer may be set in a range of 4,450 Å to 5,000 Å from the first electrode.

The first light emitting layer may include a blue light emitting layer, a blue light emitting layer and a yellow-green light emitting layer, or a blue light emitting layer and a red light emitting layer, or a blue light emitting layer and a green light emitting layer, or a combination thereof.

The second light emitting layer may include a yellow-green light emitting layer, or a yellow light emitting layer and a red light emitting layer, or a red light emitting layer and a green light emitting layer, or a yellow-green light emitting layer and a red light emitting layer, or a combination thereof.

The third light emitting layer may be a blue light emitting layer, or a blue light emitting layer and a yellow-green light emitting layer, or a blue light emitting layer and a red light emitting layer, or a blue light emitting layer and a green light emitting layer, or a combination thereof.

The light emitting region of the first light emitting layer may range from 440 nm to 650 nm, the light emitting region of the second light emitting layer may range from 510 nm to 650 nm, and the light emitting region of the third light emitting layer may range from 440 nm to 650 nm.

The maximum emission range of the first emission layer is in the range of 440 nm to 470 nm, the maximum emission range of the second emission layer is in the range of 530 nm to 570 nm, and the maximum emission range of the third emission layer is in the range of 440 nm to 470 nm .

As described above, it can be seen that the emission intensity of the light emitting layer can be increased when the EPEL (Emission Position of Emitting Layers) structure of the present invention is applied. Further, it can be seen that the panel efficiency is improved because the emission intensity is increased.

FIG. 22 is a cross-sectional view of an organic light emitting display device including an organic light emitting device according to an embodiment of the present invention, which is an organic light emitting device according to the fourth, fifth, and sixth embodiments of the present invention, .

22, the organic light emitting diode display 2000 according to the present invention includes a substrate 20, a thin film transistor (TFT), a first electrode 202, a light emitting portion 2180, and a second electrode 204 . The thin film transistor TFT includes a gate electrode 2115, a gate insulating layer 2120, a semiconductor layer 2131, a source electrode 2133, and a drain electrode 2135.

Though the thin film transistor (TFT) is shown as an inverted staggered structure in FIG. 22, it may be formed in a coplanar structure.

The substrate 20 may be made of glass, metal, or plastic.

A gate electrode 2115 is formed on the substrate 20 and connected to a gate line (not shown). The gate electrode 2115 may be formed of a material selected from the group consisting of Mo, Al, Cr, Au, Ti, Ni, Ne, And may be a multilayer composed of any one selected or an alloy thereof.

The gate insulating layer 2120 is formed on the gate electrode 2115 and may be a silicon oxide film (SiOx), a silicon nitride film (SiNx), or a multilayer thereof, but is not limited thereto.

The semiconductor layer 2131 is formed on the gate insulating layer 2120 and is formed of amorphous silicon (a-Si), polycrystalline silicon (poly-Si), oxide semiconductor or organic semiconductor . When the semiconductor layer is formed of an oxide semiconductor, it may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), or the like. An etch stopper (not shown) may be formed on the semiconductor layer 2131 to protect the semiconductor layer 2131, but it may be omitted depending on the configuration of the device.

The source electrode 2133 and the drain electrode 2135 may be formed on the semiconductor layer 2131. [ The source electrode 2133 and the drain electrode 2135 may be formed of a single layer or a multilayer and may be formed of a metal such as molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti) ), Neodymium (Nd), and copper (Cu), or an alloy thereof.

The passivation layer 2140 is formed on the source electrode 2133 and the drain electrode 2135 and may be formed of a silicon oxide film (SiOx), a silicon nitride film (SiNx), or a multilayer thereof. Or an acryl resin, a polyimide resin, or the like, but is not limited thereto.

The first electrode 202 is formed on the protective layer 2140.

A reflective electrode may be further provided under the first electrode 202 to reflect light toward the second electrode 204. Further, an auxiliary electrode may be further formed on the first electrode 202.

The first electrode 202 is electrically connected to the drain electrode 2135 through a contact hole CH in a predetermined region of the protective layer 2140. Although the drain electrode 2135 and the first electrode 202 are shown as being electrically connected to each other in FIG. 22, the source electrode 2133 and the first electrode 202 may be electrically connected through a contact hole CH in a predetermined region of the protective layer 2140, (202) may be electrically connected.

A bank layer 2170 is formed on the first electrode 202 and defines a pixel region. That is, the bank layer 2170 is formed in a matrix structure in a boundary region between a plurality of pixels, so that the pixel region is defined by the bank layer 2170.

The light emitting portion 2180 is formed on the bank layer 2170. The light emitting unit 2180 includes a first light emitting unit, a second light emitting unit, and a second light emitting unit formed on the first electrode 202, as shown in the fourth, fifth, and sixth embodiments of the present invention, 3 light emitting portions.

The second electrode 204 is formed on the light emitting portion 2180. Further, a buffer layer may be further formed under the second electrode 204.

An encapsulation layer 2190 is formed on the second electrode 204. The sealing layer 2190 prevents water from penetrating into the light emitting portion 2180. The encapsulation layer 2190 may be formed of a plurality of layers in which inorganic materials different from each other are laminated or a plurality of layers in which inorganic materials and organic materials are alternately laminated. The sealing substrate 2301 may be bonded to the first substrate 20 by an encapsulating layer 2190. The sealing substrate 2301 may be made of glass, plastic, or metal. A color filter 2302 and a black matrix 2303 are disposed on the sealing substrate 2301. The light emitted from the light emitting portion 2180 travels toward the sealing substrate 2301 and displays an image through the color filter 2302. [

The inventors of the present invention invented a white organic light emitting device of a top emission type having a novel structure in which the luminous efficiency and the panel efficiency of the light emitting layer can be improved and the luminance and the aperture ratio are improved. The inventors of the present invention invented a white organic light emitting device capable of further improving the blue efficiency by arranging the light emitting layers including the light emitting layers emitting the same color adjacent to each other. In addition, the organic light emitting diode display employing the top emission method according to the embodiment of the present invention can improve the aperture ratio as compared with the organic emission display using the bottom emission method.

23 is a schematic view showing a white organic light emitting device according to seventh and eighth embodiments of the present invention

The white organic light emitting device 300 shown in FIG. 23 includes a first light emitting portion 310 and a second light emitting portion 320 between the first and second electrodes 302 and 304 and the first and second electrodes 302 and 304, And a third light emitting unit 330.

The first electrode 302 is a positive electrode for supplying holes. The second electrode 304 is a cathode for supplying electrons. The first electrode 302 and the second electrode 304 may be referred to as an anode or a cathode, respectively. The first electrode 302 may be a reflective electrode and the second electrode 304 may be a transflective electrode.

The white organic light emitting device 300 of the top emission type of the present invention includes a first light emitting portion 310, a second light emitting portion 320, and a second light emitting portion 320 between the first electrode 302 and the second electrode 304, And a third light emitting unit 330.

The white organic light emitting device 300 of the top emission type of the present invention sets the position of the second electrode from the first electrode and the light emitting position of the first light emitting layer, Thereby improving the luminous efficiency and the panel efficiency. In other words, the first light emitting portion, the second light emitting portion, and the third light emitting portion are formed of EPEL (Emission Position of Emitting Layers) having a maximum light emitting range in the light emitting regions of the first light emitting layer, the second light emitting layer, Structure. The two light emitting layers of the first light emitting layer, the second light emitting layer and the third light emitting layer include a light emitting layer that emits light of the same color, thereby providing a white organic light emitting device capable of further improving the light emitting efficiency. The light emitting layer emitting the same color may be referred to as a light emitting layer containing at least one light emitting layer emitting the same color.

The position L0 of the second electrode 304 is set to be within a range of 4,700 A to 5,400 A from the first electrode 302. The emission peak of the light emitting layer constituting the first light emitting portion 310, the second light emitting portion 320 and the third light emitting portion 330 is positioned at a specific wavelength, The light emitting efficiency can be improved. The emission peak may be referred to as an emission peak of an organic layer constituting the light emitting units.

 A position L0 of the second electrode 304 is set from the first electrode 302 and an emission position L1 of the first light emitting portion 310 closest to the first electrode 302 Is set to be from 200 to 700 angstroms. Alternatively, the light emitting position L1 of the first light emitting portion 310 is set to be 200 to 700 angstroms from the reflective surface of the first electrode 302. [ The first light emitting portion 310 may include a yellow-green light emitting layer. The thickness of the light emitting layer, the number of the light emitting layer, the thickness of the organic layer, and the number of the organic layer. Accordingly, when the emission peak is located in the yellow-green emission region and the light having the wavelength corresponding to the emission peak is emitted, the first emission section 310 emits the maximum luminance So that it can be sent out. The peak wavelength of the light emitting region of the yellow-green light emitting layer may be in the range of 510 nm to 580 nm. Here, the peak wavelength may be a light emitting region.

The first light emitting portion 310 may include two layers, a red light emitting layer and a green light emitting layer, depending on the characteristics and structure of the device. The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. The peak wavelength of the luminescent region of the green light emitting layer may be in the range of 510 nm to 560 nm. Therefore, when the red light emitting layer and the green light emitting layer are composed of two layers, the peak wavelength of the light emitting region may be in the range of 510 nm to 660 nm. Here, the peak wavelength may be a light emitting region. When the red light emitting layer and the green light emitting layer are formed of two layers, the color reproducibility can be improved.

In addition, the first light emitting portion 310 may include two layers of a red light emitting layer and a yellow-green light emitting layer depending on the characteristics and structure of the device. The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. The peak wavelength of the light emitting region of the yellow-green light emitting layer may be in the range of 510 nm to 580 nm. When the red light emitting layer and the yellow-green light emitting layer are composed of two layers, the peak wavelength of the light emitting region may be in the range of 510 nm to 650 nm. Phase where the peak wavelength may be the luminescent region. When the red light-emitting layer and the yellow-green light-emitting layer are composed of two layers, the light-emitting efficiency of the red light-emitting layer can be increased.

In addition, the first light emitting portion 310 may include two layers of a yellow light emitting layer and a red light emitting layer depending on the characteristics and structure of the device. The peak wavelength of the light emitting region of the yellow light emitting layer and the red light emitting layer may be in the range of 540 nm to 650 nm. Here, the peak wavelength may be a light emitting region. The light emitting efficiency of the red light emitting layer can be increased when the light emitting layer is composed of two layers of the yellow light emitting layer and the red light emitting layer.

The light emitting position L2 of the second light emitting unit 320 is set to be within a range of 1,200 to 1,800 angstroms from the first electrode 302. [ Alternatively, the light emitting position L2 of the second light emitting unit 320 is set to be within a range of 1,200 to 1,800 angstroms from the reflective surface of the first electrode 302. [

The second light emitting portion 320 may be a blue light emitting layer. The blue light emitting layer may include one of a blue light emitting layer, a deep blue light emitting layer, and a sky blue light emitting layer. Since the deep blue light emitting layer is located in a shorter wavelength region than the blue light emitting layer, the deep blue light emitting layer can be advantageous for improving the color reproduction rate and brightness.

The light emitting position L2 of the second light emitting portion 320 may be set to a range of 1,200 to 1,800 Å from the first electrode 302 regardless of at least one of the thickness of the light emitting layer, the number of light emitting layers, As shown in FIG. Alternatively, the light emitting position L2 of the second light emitting portion 320 is set to be within a range of 1,200 to 1,800 angstroms from the reflective surface of the first electrode 302. [

 Therefore, The emission peak of the light emitting portion 320 is located in the blue light emitting region and the light of the wavelength corresponding to the emission peak is emitted to cause the second light emitting portion 320 to emit light having the maximum luminance . The peak wavelength of the emission region of the blue emission layer may be in the range of 440 nm to 480 nm. The second light emitting unit 320 may include a red light emitting layer, a green light emitting layer, and a yellow-green light emitting layer as an auxiliary light emitting layer or a combination thereof. The peak wavelength of the light emitting region of the light emitting layer including the auxiliary light emitting layer and forming the second light emitting portion 320 may range from 440 nm to 650 nm. Here, the peak wavelength may be a light emitting region.

The light emitting position L3 of the third light emitting portion 330 is set to be within a range of 2,400 to 3,100 angstroms from the first electrode 302. [ Alternatively, the light emitting position L3 of the third light emitting portion 330 is set to be within a range of 2,400 to 3,100 angstroms from the reflective surface of the first electrode 302.

The third light emitting portion 330 may include a blue light emitting layer. The blue light emitting layer may include one of a blue light emitting layer, a deep blue light emitting layer, and a sky blue light emitting layer. Since the deep blue light emitting layer is located in a shorter wavelength region than the blue light emitting layer, the deep blue light emitting layer can be advantageous for improving the color reproduction rate and brightness.

The light emitting position L3 of the third light emitting portion 330 may be set to be in the range of 2,400 to 3,100 Å from the first electrode 302 regardless of at least one of the thickness of the light emitting layer, the number of light emitting layers, As shown in FIG. Alternatively, the light emitting position L3 of the third light emitting portion 330 is set to be within a range of 2,400 to 3,100 angstroms from the reflective surface of the first electrode 302. Therefore, the emission peak of the third light emitting portion 330 is located in the blue light emitting region, so that the third light emitting portion 330 can emit the maximum luminance. The peak wavelength of the emission region of the blue emission layer may be in the range of 440 nm to 480 nm. The third light emitting portion 330 may include a red light emitting layer, a green light emitting layer, and a yellow-green light emitting layer as an auxiliary light emitting layer or a combination thereof. The peak wavelength of the light emitting region of the light emitting layer including the auxiliary light emitting layer and forming the third light emitting portion 330 may be in a range of 440 nm to 650 nm. Here, the peak wavelength may be a light emitting region.

The present invention relates to a top emission (top emission) structure using an EPEL (Emission Position of Emitting Layers) structure in which emission positions of the light emitting layers are set regardless of at least one of the thickness of the light emitting layer, the number of light emitting layers, Emitting organic electroluminescent (EL) device. The first light emitting portion, the second light emitting portion, and the third light emitting portion have an EPEL (Emission Position of Emitting Layers) structure having a maximum emission range in the emission regions of the first, second and third emission layers will be.

24 is a schematic view showing a white organic light emitting device according to a seventh embodiment of the present invention.

The white organic light emitting device 300 shown in FIG. 24 includes a first electrode 302 and a second electrode 304 and a first light emitting portion 310 and a second light emitting portion 310 between the first and second electrodes 302 and 304, (320) and a third light emitting portion (330).

The position of the second electrode 304 is set to be within a range of 4,700 A to 5,400 A from the first electrode 302. The emission peak of the light emitting layers constituting the first, second and third light emitting units 310, 320 and 330 may be set by setting the position L0 of the first electrode 302, Can be positioned at a specific wavelength, and the efficiency of the light emitting layers can be improved by emitting light of the specific wavelength.

The first light emitting part 310 includes a first HTL 312, a first EML 314 and a first ETL 316 on the first electrode 302 .

An auxiliary electrode 303 may be formed on the first electrode 302. The auxiliary electrode 303 may not be formed depending on the characteristics and structure of the device.

Although not shown in the drawing, a hole injection layer (HIL) may be additionally formed on the first electrode 302.

A hole blocking layer (HBL) may further be formed on the first emission layer (EML) 314. The first electron transport layer (ETL) 316 and the hole blocking layer HBL may be formed as one layer.

An electron blocking layer (EBL) may be further formed under the first emission layer (EML) 314. The first hole transport layer (HTL) 312 and the electron blocking layer (EBL) may be formed as one layer.

The first emission layer (EML) 314 is composed of a yellow-green emission layer. The peak wavelength of the light emitting region of the yellow-green light emitting layer may be in the range of 510 nm to 580 nm. Here, the peak wavelength may be a light emitting region.

The first emission layer (EML) 314 may include a yellow-green emission layer or a yellow emission layer and a red emission layer or a red emission layer and a green emission layer, A yellow-green light-emitting layer and a red light-emitting layer, or a combination thereof. When a red light-emitting layer is further formed in the yellow-green light-emitting layer, the efficiency of the red light-emitting layer can be further improved. The red light-emitting layer may be formed above or below the yellow-green light-emitting layer. The yellow light-emitting layer and the red light-emitting layer, or the red light-emitting layer and the green light-emitting layer, or the yellow-green light-emitting layer and the red light- (EML) 314, as shown in FIG. The yellow light-emitting layer and the red light-emitting layer or the red light-emitting layer and the green light-emitting layer or the yellow-green light-emitting layer and the red light- EML) 314, or may be configured differently.

The peak wavelength of the light emitting region of the yellow light emitting layer may be in the range of 540 nm to 580 nm. The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. Therefore, the peak wavelength of the light emitting region of the yellow light emitting layer and the red light emitting layer of the first light emitting layer (EML) 314 may be in the range of 540 nm to 650 nm. Here, the peak wavelength may be a light emitting region. The light emitting efficiency of the red light emitting layer can be increased when the light emitting layer is composed of two layers of the yellow light emitting layer and the red light emitting layer.

The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. The peak wavelength of the luminescent region of the green light emitting layer may be in the range of 510 nm to 560 nm. Therefore, the peak wavelength of the emission regions of the red and green emission layers of the first emission layer (EML) 314 may be in the range of 510 nm to 650 nm. Here, the peak wavelength may be a light emitting region. When the red light emitting layer and the green light emitting layer are formed of two layers, the color reproducibility can be improved.

The peak wavelength of the light emitting region of the yellow light emitting layer may be in the range of 540 nm to 580 nm. The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. Therefore, the peak wavelength of the light emitting region of the yellow light emitting layer and the red light emitting layer of the first light emitting layer (EML) 314 may be in the range of 540 nm to 650 nm. Here, the peak wavelength may be a light emitting region. The light emitting efficiency of the red light emitting layer can be increased when the light emitting layer is composed of two layers of the yellow light emitting layer and the red light emitting layer.

In addition, the first emission layer (EML) 314 may be composed of two layers, a red emission layer and a yellow-green emission layer, depending on the characteristics and structure of the device. The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. The peak wavelength of the light emitting region of the yellow-green light emitting layer may be in the range of 510 nm to 580 nm. When the red light-emitting layer and the yellow-green light-emitting layer are composed of two layers, the light-emitting efficiency of the red light-emitting layer can be increased. In this case, the peak wavelength of the emission region of the first emission layer (EML) 314 may be in the range of 510 nm to 650 nm. Here, the peak wavelength may be a light emitting region.

The first light emitting layer 314 may be a yellow-green light emitting layer or a yellow light emitting layer and a red light emitting layer or a red light emitting layer and a green light emitting layer, A peak wavelength of the luminescent region of the first emission layer (EML) 314 is 510 nm to 650 nm, and the emission wavelength of the first emission layer (EML) Nm. ≪ / RTI > Here, the peak wavelength may be a light emitting region.

The first hole transport layer (HTL) 312, the electron blocking layer (EBL), and the hole injection layer (HIL) may all be referred to as an organic layer. All the organic layers between the first electrode 302 and the first emission layer (EML) 314 and the auxiliary electrode 303 may be referred to as an organic layer. Accordingly, all of the organic layers between the first electrode 302 and the first emission layer (EML) 314 may be referred to as a first organic layer.

Regardless of the number or thickness of the first hole transporting layer 312 or the number or thickness of the auxiliary electrode 303 or the thickness or thickness of the electron blocking layer EBL, (EML) 314, regardless of the number and thickness of all the organic layers between the first electrode 302 and the first emission layer (EML) 314, regardless of the number and thickness of the first emission layer (HIL) The light emitting position L1 of the first electrode 302 is set within a range of 200 to 700 angstroms from the first electrode 302. Alternatively, the emission position L1 of the first emission layer (EML) 314 is set to be within a range of 200 ANGSTROM to 700 ANGSTROM from the reflective surface of the first electrode 302. Accordingly, the position (L1) of the first emission layer (EML) 314 from the first electrode 302 is in the range of 200 ANGSTROM to 700 ANGSTROM, regardless of the number of the at least one first organic layer and the thickness of the first organic layer As shown in FIG. Alternatively, the light emitting position (L1) of the first light emitting layer (EML) 314 is 200 Å from the reflective surface of the first electrode 302 regardless of the number of the at least one first organic layer and the thickness of the first organic layer. To 700 ANGSTROM.

The second light emitting unit 320 may include a second hole transport layer (HTL) 322, a second light emitting layer (EML) 324, and a second electron transport layer (ETL) 326.

A hole injection layer (HIL) may be further formed under the second hole transport layer (HTL) 322.

A hole blocking layer (HBL) may be further formed on the second emission layer (EML) 324. The second electron transport layer (ETL) 326 and the hole blocking layer HBL may be formed as a single layer.

An electron blocking layer (EBL) may be further formed under the second emission layer (EML) 324. The second hole transport layer (HTL) 322 and the electron blocking layer EBL may be formed as a single layer.

The second light emitting layer (EML) 324 is composed of a blue light emitting layer including a blue light emitting layer or an auxiliary light emitting layer capable of emitting different colors. The blue light emitting layer may include one of a blue light emitting layer, a deep blue light emitting layer, and a sky blue light emitting layer. Since the deep blue light emitting layer is located in a shorter wavelength region than the blue light emitting layer, the deep blue light emitting layer can be advantageous for improving the color reproduction rate and brightness.

The auxiliary light-emitting layer may be formed of one of a yellow-green light-emitting layer, a red light-emitting layer, and a green light-emitting layer, or a combination thereof. When the auxiliary light-emitting layer is further formed, the emission efficiency of the green light-emitting layer and the red light-emitting layer can be further improved. When forming the second light emitting layer (EML) 324 including the auxiliary light emitting layer, the yellow-green light emitting layer or the red light emitting layer or the green light emitting layer may be formed in the second light emitting layer (EML) ) 324, as shown in Fig. Further, a yellow-green light emitting layer, a red light emitting layer or a green light emitting layer may be the same as or different from the upper and lower portions of the second light emitting layer (EML) 324 as the auxiliary light emitting layer It is also possible. The position and the number of the light emitting layer can be selectively arranged depending on the configuration and characteristics of the device, and the present invention is not limited thereto.

When the auxiliary light emitting layer is formed in the second light emitting layer (EML) 324, the peak wavelength of the light emitting region of the second light emitting layer (EML) 324 may be in a range of 440 nm to 650 nm have. Here, the peak wavelength may be a light emitting region.

A first charge generating layer (CGL) 340 may be further formed between the first light emitting portion 310 and the second light emitting portion 320. The first charge generation layer (CGL) 340 may include an N-type charge generation layer (N-CGL) and a P-type charge generation layer (P-CGL).

(EML) 314, the first electron transport layer (ETL) 316, the first charge generation layer (CGL) 340, the second hole transport layer 322, the HBL , An electron blocking layer (EBL), a hole injection layer (HIL), and the like can be referred to as an organic layer. All the organic layers between the first emission layer (EML) 314) and the second emission layer (EML) 324 and the first emission layer (EML) 314 may be referred to as an organic layer. Accordingly, all organic layers between the first emission layer (EML) 314 and the second emission layer (EML) 324 may be referred to as a second organic layer.

(CGL) 340, regardless of the number or thickness of the first electron transport layer (ETL) 316 or the number or thickness of the second hole transport layer (HTL) 322, Irrespective of the number and thickness of the hole injection layer (HIL), or regardless of the number or thickness of the hole blocking layer (HBL) or the number or thickness of the electron blocking layer (EBL) Regardless of the number or thickness of the first light emitting layer (EML) 314 or the number or thickness of all the organic layers between the first electrode 302 and the first light emitting layer (EML) 314, The light emitting position L2 of the second light emitting layer (EML) 324 may be the same as the light emitting position of the first light emitting layer (EML) 314, regardless of the number or thickness of all the organic layers between the first light emitting layer (EML) 314 and the second light emitting layer Is set to be within a range of 1,200 to 1,800 angstroms from the first electrode 302. Alternatively, the emission position L2 of the second emission layer (EML) 324 is set to be within a range of 1,200 to 1,800 angstroms from the reflective surface of the first electrode 302. Therefore, the number of the first organic layers, the number of the first organic layers, the number of the second organic layers, the thickness of the second organic layers, the number of the first light emitting layers, and the thickness of the first light emitting layer, The position L2 of the second emission layer (EML) 324 from the first electrode 302 may be set to be within a range of 1,200 to 1,800. Or the thickness of the first organic layer, the thickness of the first organic layer, the thickness of the second organic layer, the number of the first light emitting layer, and the thickness of the first light emitting layer, The position L2 of the second emission layer (EML) 324 from the reflective surface of the first electrode 302 may be set to be within a range of 1,200 to 1,800.

The third light emitting portion 330 may include a third electron transport layer (ETL) 336, a third emission layer (EML) 334, and a third hole transport layer (HTL) 332. Although not shown in the drawing, an electron injection layer (EIL) may be further formed on the third electron transport layer (ETL) 336.

A hole injection layer (HIL) may be further formed under the third hole transport layer (HTL) 332.

A second charge generating layer (CGL) 350 may be further formed between the second light emitting portion 320 and the third light emitting portion 330. The second charge generation layer (CGL) 350 may include an N-type charge generation layer (N-CGL) and a P-type charge generation layer (P-CGL).

A hole blocking layer (HBL) may further be formed on the third emission layer (EML) The third electron transport layer (ETL) 336 and the hole blocking layer HBL may be formed as one layer.

An electron blocking layer (EBL) may be further formed under the third emission layer (EML) The third hole transport layer (HTL) 332 and the electron blocking layer (EBL) may be formed as a single layer.

The third emission layer (EML) 334 may include a blue emission layer or a blue emission layer including an auxiliary emission layer capable of emitting different colors. The blue light emitting layer may include one of a blue light emitting layer, a deep blue light emitting layer, and a sky blue light emitting layer. Since the deep blue light emitting layer is located in a shorter wavelength region than the blue light emitting layer, the deep blue light emitting layer can be advantageous for improving the color reproduction rate and brightness.

The auxiliary light-emitting layer may be formed of one of a yellow-green light-emitting layer, a red light-emitting layer, and a green light-emitting layer, or a combination thereof. When the auxiliary light-emitting layer is further formed, the emission efficiency of the green light-emitting layer and the red light-emitting layer can be further improved. When forming the third light emitting layer (EML) 334 including the auxiliary light emitting layer, the yellow-green light emitting layer or the red light emitting layer or the green light emitting layer is formed as the third light emitting layer (EML) 334 on the upper side or the lower side. Further, it is also possible that the yellow-green or red light emitting layer or the green light emitting layer is constituted by the same or different structure above and below the third light emitting layer (EML) 334 as the auxiliary light emitting layer It is possible. The position and the number of the light emitting layer can be selectively arranged depending on the configuration and characteristics of the device, and the present invention is not limited thereto.

When the auxiliary emission layer is formed in the third emission layer (EML) 334, the peak wavelength of the emission region of the third emission layer (EML) 334 may be in the range of 440 nm to 650 nm. have. Here, the peak wavelength may be a light emitting region.

(EML) 324, the second electron transport layer (ETL) 326, the second charge generation layer (CGL) 350, the third hole transport layer 332, the HBL , The electron blocking layer (EBL), the hole injection layer (HIL), and the like can be referred to as an organic layer. All the organic layers between the second emission layer (EML) 324 and the third emission layer (EML) 334 and the second emission layer (EML) 324 may be referred to as an organic layer. Accordingly, all of the organic layers between the second emission layer (EML) 324 and the third emission layer (EML) 334 may be referred to as a third organic layer.

(HTL) 332, regardless of the number or thickness of the second electron transport layer (ETL) 326, or the number or thickness of the second charge generation layer (CGL) (EML) 314, irrespective of the number or thickness of the second light emitting layer (EML) 314, or the number or thickness of the second light emitting layer (EML) 324, (EML) 314 and the second light emitting layer (EML) 324, regardless of the number or thickness of all the organic layers between the first light emitting layer (EML) 314 and the first light emitting layer Regardless of the number and thickness of organic layers or the number or thickness of all the organic layers between the second emission layer (EML) 324 and the third emission layer (EML) 334, the third emission layer (EML) 334 are set to be within a range of 2,400 to 3,100 angstroms from the first electrode 302. Alternatively, the emission position L3 of the third emission layer (EML) 334 is set to be within a range of 2,400 to 3,100 angles from the reflective surface of the first electrode 302. Therefore, the number of the at least one first organic layer, the thickness of the first organic layer, the number of the second organic layers, the thickness of the second organic layer, the number of the third organic layers, the thickness of the third organic layer, (L3) of the third light emitting layer (EML) 334 from the first electrode 302 regardless of the number of the light emitting layers, the thickness of the first light emitting layer, the number of the second light emitting layers, and the thickness of the second light emitting layer. Can be set to be within a range of 2,400 ANGSTROM to 3,100 ANGSTROM. Or the number of the first organic layers, the thickness of the first organic layers, the number of the second organic layers, the thickness of the second organic layers, the number of the third organic layers, the thickness of the third organic layers, (EML) 334 from the reflective surface of the first electrode 302 regardless of the number of the light emitting layers, the thickness of the first light emitting layer, the number of the second light emitting layers, and the thickness of the second light emitting layer (L3) may be set to be within a range of 2,400 to 3,100 angstroms.

All layers such as the third emission layer (EML) 334, the third electron transport layer (ETL) 336, the hole blocking layer (HBL), and the electron injection layer (EIL) may be referred to as an organic layer. All organic layers between the third emission layer (EML) 334 and the second electrode 304 and the second electrode 304 and the third emission layer (EML) 334 may be referred to as an organic layer. Accordingly, all the organic layers, including the second electrode 304, between the third emission layer (EML) 334 and the second electrode 304 can be referred to as a fourth organic layer.

Regardless of the number or thickness of the third electron transport layer (ETL) 336 or the number or thickness of the electron injection layer (EIL), or regardless of the number or thickness of the hole blocking layer (HBL) Regardless of the number or thickness of the electrodes 304 or the number or thickness of the third emission layer (EML) 334 or between the substrate 301 and the first emission layer (EML) 314 Regardless of the number or thickness of organic layers or the number or thickness of all the organic layers between the first and second emission layers (EMLs) 314 and 324, or between the first and second emission layers (EMLs) (EML) 334 and the second electrode 304, regardless of the number or the thickness of all the organic layers between the third emission layer (EML) 334 and the third emission layer (EML) The position L0 of the second electrode 304 from the first electrode 302 is within a range of 4,700 A to 5,400 A, So that you can set. Alternatively, the position L0 of the second electrode 304 may be set to be within a range of 4,700 A to 5,400 A from the reflective surface of the first electrode 302.

Therefore, the number of the at least one first organic layer, the thickness of the first organic layer, the number of the second organic layers, the thickness of the second organic layer, the number of the third organic layers, the thickness of the third organic layer, The number of the first light emitting layers, the number of the organic layers, the thickness of the fourth organic layer, the number of the first light emitting layers, the thickness of the first light emitting layer, the number of the second light emitting layers, The position L0 of the second electrode 304 may be set to be within a range of 4,700 A to 5,400 A from the first electrode 302 regardless of the thickness of the first electrode 302. Or the number of the at least one first organic layer, the thickness of the first organic layer, the number of the second organic layers, the thickness of the second organic layer, the number of the third organic layers, the thickness of the third organic layer, The number of the first light emitting layers, the number of the organic layers, the thickness of the fourth organic layer, the number of the first light emitting layers, the thickness of the first light emitting layer, the number of the second light emitting layers, The position L0 of the second electrode 304 can be set to be within a range of 4,700 to 5,400 angstroms from the reflective surface of the first electrode 302 regardless of the thickness of the first electrode 302. [

The structure shown in Fig. 24 shows an example of the present invention. The structure shown in Fig. 24 can be selectively formed according to the structure and characteristics of the white organic light emitting device, but is not limited thereto.

25 is a view showing a light emitting position of an organic light emitting diode according to a seventh embodiment of the present invention.

In FIG. 25, the abscissa represents the wavelength region of light, and the ordinate represents the emission position of the light emitting layers constituting the light emitting portion from the first electrode 302, which may be referred to as a contour map. Here, except for the first electrode 302 and the second electrode 304, the emission positions of the light emitting layers at the emission peak when the EPEL structure of the present invention is applied are shown. The light emitting regions of the light emitting layers have the maximum light emitting range.

Since the first emission layer (EML) 314 forming the first emission layer 310 is a yellow-green emission layer, the peak emission wavelength of the emission region of the first emission layer (EML) 314 peak wavelength range may range from 510 nm to 580 nm. It is necessary to emit light at 510 nm to 580 nm which is a light emitting region of a yellow-green light emitting layer, thereby achieving maximum efficiency in a white region of a contour map.

Therefore, the emission position of the first emission layer (EML) 314 is set in the range of 200 to 700 Å, and the emission peak 314E is positioned in the range of 510 nm to 580 nm. As a result, the first light emitting layer (EML) 314 emits light at 510 nm to 580 nm, thereby achieving maximum efficiency.

The first light emitting layer (EML) 314 of the first light emitting portion 310 may be composed of two layers, a red light emitting layer and a green light emitting layer, depending on the characteristics and structure of the device. The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. The peak wavelength of the luminescent region of the green light emitting layer may be in the range of 510 nm to 560 nm. Therefore, in this case, it is necessary to emit light at 510 nm to 650 nm, which is the light emitting region of the first light emitting layer (EML) 314, so that maximum efficiency can be obtained in the white region of the contour map.

The first light emitting layer (EML) 314 of the first light emitting portion 310 is formed of two layers of a red light emitting layer and a yellow-green light emitting layer according to the characteristics and structure of the device. can do. The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. The peak wavelength of the light emitting region of the yellow-green light emitting layer may be in the range of 510 nm to 580 nm. Therefore, in this case, it is necessary to emit light at 510 nm to 650 nm, which is the light emitting region of the first light emitting layer (EML) 314, so that maximum efficiency can be obtained in the white region of the contour map.

The first light emitting layer (EML) 314 of the first light emitting portion 310 may include two layers of a yellow light emitting layer and a red light emitting layer depending on the characteristics and structure of the device. The peak wavelength of the light emitting region of the yellow light emitting layer may be in the range of 540 nm to 580 nm. The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. Therefore, in this case, it is necessary to emit light at 540 to 650 nm, which is the light emitting region of the first light emitting layer (EML) 314, so that maximum efficiency can be obtained in the white region of the contour map.

Accordingly, a yellow-green light-emitting layer, a yellow light-emitting layer, a red light-emitting layer, a red light-emitting layer, and a green light-emitting layer are formed as the first light-emitting layer (EML) A peak wavelength range of the luminescent region of the first emission layer (EML) 314 is 510 (nm), and a peak wavelength of the luminescent region of the first emission layer (EML) Nm to 650 nm. In this case, it is necessary to emit light at 510 nm to 650 nm, which is a light emitting region of the first light emitting layer (EML) 314, so that maximum efficiency can be obtained in the white region of the contour map.

25 does not include an auxiliary light emitting layer in the first light emitting layer (EML) 314, and the first light emitting layer (EML) 314 shows a light emitting position using a yellow-green light emitting layer as an example. Therefore, the peak wavelength range of the emission region of the first emission layer (EML) 314 can exhibit the maximum efficiency in the range of 510 nm to 580 nm.

Since the second emission layer (EML) 324 of the second emission layer 320 is a blue emission layer, the peak wavelength range of the emission region of the second emission layer (EML) May range from 440 nm to 480 nm. It is necessary to emit light at 440 nm to 480 nm which is a light emitting region of a blue light emitting layer, so that maximum efficiency can be obtained in a white region of a contour map.

Therefore, when the emission position of the second emission layer (EML) 324 is set in the range of 1,200 to 1,800 Å, the emission peak 324E of the second emission layer (EML) Nm. Therefore, the second light emitting layer (EML) 324 emits light at 440 nm to 480 nm, thereby achieving maximum efficiency.

The blue light emitting layer may include one of a blue light emitting layer, a deep blue light emitting layer, and a sky blue light emitting layer.

A yellow-green or red light emitting layer or a green light emitting layer is formed as an auxiliary light emitting layer in the second light emitting layer (EML) 324 constituting the second light emitting portion 320 , The peak wavelength range of the emission region of the second emission layer (EML) 324 may range from 440 nm to 650 nm. Therefore, in this case, it is necessary to emit light at 440 nm to 650 nm, which is the light emitting region of the second light emitting layer (EML) 324, so that maximum efficiency can be obtained in the white region of the contour map.

In FIG. 25, an auxiliary light emitting layer is not included in the second light emitting layer (EML) 324, and the second light emitting layer (EML) 324 shows a light emitting position using a blue light emitting layer as an example. Therefore, the peak wavelength range of the emission region of the second emission layer (EML) 324 can reach the maximum efficiency in the range of 440 nm to 480 nm.

Since the third emission layer (EML) 334 of the third emission layer 330 is a blue emission layer, the peak wavelength range of the emission region of the third emission layer (EML) May range from 440 nm to 480 nm. It is necessary to emit light at 440 nm to 480 nm which is a light emitting region of a blue light emitting layer, so that maximum efficiency can be obtained in a white region of a contour map.

Therefore, the emission position of the third emission layer (EML) 334 is set in the range of 2,400 to 3,100 Å, so that the emission peak 334E of the third emission layer (EML) 334 is in the range of 440 nm to 480 Nm. As a result, the third light emitting layer (EML) 334 emits light at 440 nm to 480 nm, thereby achieving maximum efficiency.

The blue light emitting layer may include one of a blue light emitting layer, a deep blue light emitting layer, and a sky blue light emitting layer.

A yellow-green or red light emitting layer or a green light emitting layer is formed as an auxiliary light emitting layer in the third light emitting layer (EML) 334 constituting the third light emitting portion 330 , The peak wavelength range of the emission region of the third emission layer (EML) 334 may range from 440 nm to 650 nm. Therefore, in this case, it is necessary to emit light at 440 to 650 nm, which is a light emitting region of the third light emitting layer (EML) 334, so that maximum efficiency can be obtained in the white region of the contour map.

In FIG. 25, the third light emitting layer (EML) 334 does not include an auxiliary light emitting layer, and the third light emitting layer (EML) 334 shows a light emitting position using a blue light emitting layer as an example. Accordingly, the peak wavelength range of the emission region of the third emission layer (EML) 334 can exhibit the maximum efficiency in the range of 440 nm to 480 nm.

As described above, the position of the emission peak changes according to the emission position of the emission layer. The present invention applies an emission position of emission (EPEL) structure in which the emission peak of the emission layer is positioned in a desired emission region by setting the emission position of the emission layer constituting the emission portion.

Accordingly, the emission peak is positioned at a specific wavelength by applying the emission position of the emission layer (EPEL) structure to the emission layer, so that the emission layers can maximize efficiency in the light corresponding to a specific wavelength.

A maximum emission range of the light emitting layers in the emission region having the specific wavelength can be referred to as a maximum emission range. The maximum emission range of the first emission layer is 530 nm to 570 nm, the maximum emission range of the second emission layer is 440 nm to 470 nm, and the maximum emission range of the third emission layer is 440 nm to 470 nm.

That is, in order to emit light at 440 nm to 470 nm, which is the maximum emission range of the blue emission layer, and 530 nm to 570 nm, which is the maximum emission range of the yellow-green emission layer, The maximum efficiency can be achieved in the white area. It can be seen that the light emitting layer can achieve the maximum efficiency by setting the light emitting position of the light emitting layer of the present invention to correspond to the light emitting region. The EPEL structure of the present invention is characterized in that the number of the first organic layers, the thickness of the first organic layers, the number of the second organic layers, the thickness of the second organic layers, the number of the third organic layers, The thickness of the fourth organic layer, the thickness of the fourth organic layer, the number of the first light emitting layer, the thickness of the first light emitting layer, the number of the second light emitting layer, the thickness of the second light emitting layer, The first light emitting layer, the second light emitting layer, and the third light emitting layer have a maximum light emitting range regardless of the thickness of the third light emitting layer, so that the light emitting layer can achieve the maximum efficiency.

26 is a diagram showing an EL spectrum according to a seventh embodiment of the present invention.

In FIG. 26, the abscissa represents the wavelength region of light, and the ordinate represents the intensity of light. The emission intensity is a relative value based on the maximum value of the EL spectrum.

In FIG. 26, the embodiment (minimum position) is a portion set to the minimum position when the light emitting positions of the light emitting layers are set. For example, when the emission position L1 of the first emission layer (EML) 314 is in the range of 200 to 700 angstroms from the first electrode 302, the minimum position is set to 200 angstroms.

The embodiment (maximum position) is a portion set to the maximum position when the light emitting positions of the light emitting layers are set. For example, when the emission position L1 of the first emission layer (EML) 314 is in the range of 200 to 700 angstroms from the first electrode 202, the maximum position is set to 700 angstroms.

The embodiment (optimum position) is a portion set to the light emitting position of the seventh embodiment of the present invention. For example, when the emission position L1 of the first emission layer (EML) 314 is in the range of 200 to 700 angstroms from the first electrode 302, the emission position of the embodiment is set in the range of 200 to 700 angstroms .

As shown in FIG. 26, when the minimum position of the emission position is deviated from the optimum position in the EPEL (Emission Position of Emitting Layers) structure of the present invention, the following is obtained. The emission intensity decreases at 440 nm to 480 nm, which is the peak wavelength range of blue light. It can be seen that the luminescence intensity is significantly reduced at 510 nm to 580 nm, which is the peak wavelength range of yellow-green light. It can be seen that the luminescence intensity is remarkably decreased at 600 nm to 650 nm, which is the peak wavelength range of red light.

In the EPEL (Emission Position of Emitting Layers) structure of the present invention, when the maximum position of the emission position is deviated, the optimum position is as follows. It can be seen that the luminescence intensity decreases at 440 nm to 480 nm, which is the peak wavelength range of blue light, and is out of the peak wavelength range of blue light. It can be seen that the luminescence intensity decreases in the range of 510 nm to 580 nm, which is the peak wavelength range of the yellow-green light.

Accordingly, it can be seen that the emission intensity increases in the peak wavelength range of blue light when the optimum position of the present invention is set, compared with the case where the minimum or maximum position of the embodiment is set. Further, it can be seen that the emission intensity increases in the peak wavelength range of yellow-green light when the optimum position of the present invention is set to the minimum position or the maximum position of the embodiment. It can be seen that the emission intensity is increased in the peak wavelength range of red light when it is set to the optimum position of the present invention.

The panel efficiency of the white organic light emitting device and the comparative example using the EPEL (Emission Position of Emitting Layers) structure of the present invention are as shown in Table 13 below. And the efficiency of the comparative example is 100%, the efficiency of the seventh embodiment of the present invention is shown.

Table 13 below compares the efficiency of the comparative example and the embodiment of the present invention. The comparative example is a Bottom Emission type white organic light emitting device including a first light emitting portion, a second light emitting portion and a third light emitting portion. The first light emitting portion is a blue light emitting layer, the second light emitting portion is a yellow- Yellow-Green) light-emitting layer, and the third light-emitting portion is a blue light-emitting layer. The embodiment is a top emission type white organic light emitting device when an optimum position of an EPEL (Emission Position of Emitting Layers) structure of the present invention is applied.

As shown in Table 13, when the EPEL structure of the present invention is applied to the comparative example as compared with the comparative example, when the efficiency of the comparative example is 100%, the red efficiency is increased by 77% and the green efficiency is 64 %, Respectively. It can be seen that the blue efficiency increased by about 51% and the white efficiency increased by about 68%.

The panel efficiency of the white organic light emitting device and the comparative example using the EPEL (Emission Position of Emitting Layers) structure of the present invention are as shown in Table 14 below.

Table 14 below shows the efficiencies of the embodiment (minimum position) and the embodiment (maximum position) when the efficiency of the embodiment (optimum position) is taken as 100%.

The panel efficiency was measured when the driving current density was 10 mA / cm ² . When the panel efficiency of the embodiment is 100%, the panel efficiency of the embodiment (minimum position) and the embodiment (maximum position) are measured.

As shown in Table 14, the efficiency of red, green, blue, and white is reduced at the boundary between the embodiment (minimum position) and the embodiment (maximum position) . It can be seen that the efficiencies of red, green, blue, and white are further reduced in the embodiment (minimum position) than in the embodiment (maximum position).

Therefore, it can be seen that the panel efficiency decreases when the optimal position of the emission position of the EPEL structure of the present invention is deviated.

As described in the seventh embodiment of the present invention, the organic light emitting device may be an organic light emitting device of the top emission type.

The second light emitting layer and the third light emitting layer may include a light emitting layer emitting the same color.

The position of the second electrode may be set in the range of 4,700 A to 5,400 A from the first electrode.

The light emitting position of the first light emitting layer can be set in the range of 200 Å to 700 Å from the first electrode.

The light emitting position of the second light emitting layer can be set in the range of 1,200 A to 1,800 A from the first electrode.

The light emitting position of the third light emitting layer can be set in the range of 2,400 Å to 3,100 Å from the first electrode.

The first light emitting layer may include a yellow-green light emitting layer, or a yellow light emitting layer and a red light emitting layer, or a red light emitting layer and a green light emitting layer, or a yellow-green light emitting layer and a red light emitting layer, or a combination thereof.

The second light emitting layer and the third light emitting layer may be composed of a blue light emitting layer, a blue light emitting layer and a yellow-green light emitting layer, or a blue light emitting layer and a red light emitting layer, or a blue light emitting layer and a green light emitting layer, or a combination thereof.

The light emitting region of the first light emitting layer may range from 510 nm to 650 nm, the light emitting region of the second light emitting layer may range from 440 nm to 650 nm, and the light emitting region of the third light emitting layer may range from 440 nm to 650 nm.

Wherein the maximum emission range of the first emission layer is in the range of 530 nm to 570 nm, the maximum emission range of the second emission layer is in the range of 440 nm to 470 nm, and the maximum emission range of the third emission layer is in the range of 440 nm to 470 nm .

As described above, it can be seen that the emission intensity of the light emitting layer can be increased when the EPEL (Emission Position of Emitting Layers) structure of the present invention is applied. Further, it can be seen that the panel efficiency is improved because the emission intensity is increased.

27 is a schematic view showing a white organic light emitting device according to an eighth embodiment of the present invention. In describing the present embodiment, description of the same or corresponding elements to those of the previous embodiment will be omitted.

The white organic light emitting device 300 shown in FIG. 27 includes a first light emitting portion 310 and a second light emitting portion 310 between the first electrode 302 and the second electrode 304 and between the first and second electrodes 302 and 304, (320) and a third light emitting portion (330).

Referring to FIG. 27, the position of the second electrode 304 is set to be 4,700 A to 5,400 A from the first electrode 302. The emission peak of the light emitting layers constituting the first, second and third light emitting units 310, 320 and 330 may be set by setting the position L0 of the first electrode 302, Can be positioned at a specific wavelength, and the efficiency of the light emitting layers can be improved by emitting light of the specific wavelength. That is, the first, second, and third light emitting units 310, 320, and 330 may include EPELs having a maximum emission range in the emission regions of the first, second, (Emission Position of Emitting Layers) structure. The two light emitting layers of the first light emitting layer, the second light emitting layer, and the third light emitting layer include a light emitting layer that emits the same color, thereby providing a white organic light emitting device capable of further improving the light emitting efficiency. The light emitting layer emitting the same color may be referred to as a light emitting layer containing at least one light emitting layer emitting the same color.

The first light emitting part 310 includes a first HTL 312, a first EML 314 and a first ETL 316 on the first electrode 302 .

An auxiliary electrode 303 may be formed on the first electrode 302. The auxiliary electrode 203 may not be formed depending on the characteristics and structure of the device.

Although not shown in the drawing, a hole injection layer (HIL) may be additionally formed on the first electrode 302.

A hole blocking layer (HBL) may further be formed on the first emission layer (EML) 314.

An electron blocking layer (EBL) may be further formed under the first emission layer (EML) 314.

The first emission layer (EML) 314 is composed of a yellow-green emission layer. The peak wavelength of the light emitting region of the yellow-green light emitting layer may be in the range of 510 nm to 580 nm. Here, the peak wavelength may be a light emitting region.

The first emission layer (EML) 314 may include a yellow-green emission layer or a yellow emission layer and a red emission layer or a red emission layer and a green emission layer, A yellow-green light-emitting layer and a red light-emitting layer, or a combination thereof. When a red light-emitting layer is further formed in the yellow-green light-emitting layer, the efficiency of the red light-emitting layer can be further improved. The red light-emitting layer may be formed above or below the yellow-green light-emitting layer. The yellow light-emitting layer and the red light-emitting layer, or the red light-emitting layer and the green light-emitting layer, or the yellow-green light-emitting layer and the red light- (EML) 314, as shown in FIG. The yellow light-emitting layer and the red light-emitting layer or the red light-emitting layer and the green light-emitting layer or the yellow-green light-emitting layer and the red light- EML) 314, or may be configured differently.

The peak wavelength of the light emitting region of the yellow light emitting layer may be in the range of 540 nm to 580 nm. The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. Therefore, the peak wavelength of the light emitting region of the yellow light emitting layer and the red light emitting layer of the first light emitting layer (EML) 314 may be in the range of 540 nm to 650 nm. Here, the peak wavelength may be a light emitting region. The light emitting efficiency of the red light emitting layer can be increased when the light emitting layer is composed of two layers of the yellow light emitting layer and the red light emitting layer.

The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. The peak wavelength of the luminescent region of the green light emitting layer may be in the range of 510 nm to 560 nm. Therefore, the peak wavelength of the emission regions of the red and green emission layers of the first emission layer (EML) 314 may be in the range of 510 nm to 650 nm. Here, the peak wavelength may be a light emitting region. When the red light emitting layer and the green light emitting layer are formed of two layers, the color reproducibility can be improved.

The peak wavelength of the light emitting region of the yellow light emitting layer may be in the range of 540 nm to 580 nm. The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. Therefore, the peak wavelength of the light emitting region of the yellow light emitting layer and the red light emitting layer of the first light emitting layer (EML) 314 may be in the range of 540 nm to 650 nm. Here, the peak wavelength may be a light emitting region. The light emitting efficiency of the red light emitting layer can be increased when the light emitting layer is composed of two layers of the yellow light emitting layer and the red light emitting layer.

In addition, the first emission layer (EML) 314 may be composed of two layers, a red emission layer and a yellow-green emission layer, depending on the characteristics and structure of the device. The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. The peak wavelength of the light emitting region of the yellow-green light emitting layer may be in the range of 510 nm to 580 nm. When the red light-emitting layer and the yellow-green light-emitting layer are composed of two layers, the light-emitting efficiency of the red light-emitting layer can be increased. In this case, the peak wavelength of the emission region of the first emission layer (EML) 314 may be in the range of 510 nm to 650 nm. Here, the peak wavelength may be a light emitting region.

The first light emitting layer 314 may be a yellow-green light emitting layer or a yellow light emitting layer and a red light emitting layer or a red light emitting layer and a green light emitting layer, A peak wavelength of the luminescent region of the first emission layer (EML) 314 is 510 nm to 650 nm, and the emission wavelength of the first emission layer (EML) Nm. ≪ / RTI > Here, the peak wavelength may be a light emitting region.

The first hole transport layer (HTL) 312, the electron blocking layer (EBL), and the hole injection layer (HIL) may all be referred to as an organic layer. All the organic layers between the first electrode 302 and the first emission layer (EML) 314 and the auxiliary electrode 303 may be referred to as an organic layer. Accordingly, all of the organic layers between the first electrode 302 and the first emission layer (EML) 314 may be referred to as a first organic layer.

Regardless of the number or thickness of the first hole transporting layer 312 or the number or thickness of the auxiliary electrode 303 or the thickness or thickness of the electron blocking layer EBL, (EML) 314, regardless of the number and thickness of all the organic layers between the first electrode 302 and the first emission layer (EML) 314, regardless of the number and thickness of the first emission layer (HIL) The light emitting position L1 of the first electrode 302 is set within a range of 200 to 700 angstroms from the first electrode 302. Alternatively, the emission position L1 of the first emission layer (EML) 314 is set to be within a range of 200 ANGSTROM to 700 ANGSTROM from the reflective surface of the first electrode 302.

Accordingly, the position (L1) of the first emission layer (EML) 314 from the first electrode 302 is in the range of 200 ANGSTROM to 700 ANGSTROM, regardless of the number of the at least one first organic layer and the thickness of the first organic layer As shown in FIG. Alternatively, the light emitting position (L1) of the first light emitting layer (EML) 314 is 200 Å from the reflective surface of the first electrode 302 regardless of the number of the at least one first organic layer and the thickness of the first organic layer. To 700 ANGSTROM.

The second light emitting unit 320 may include a second hole transport layer (HTL) 322, a second light emitting layer (EML) 324, and a second electron transport layer (ETL) 326.

A hole injection layer (HIL) may be further formed under the second hole transport layer (HTL) 322.

A hole blocking layer (HBL) may be further formed on the second emission layer (EML) 324. The second electron transport layer (ETL) 326 and the hole blocking layer HBL may be formed as a single layer.

An electron blocking layer (EBL) may be further formed under the second emission layer (EML) 324. The second hole transport layer (HTL) 322 and the electron blocking layer EBL may be formed as a single layer.

The second light emitting layer (EML) 324 is composed of a blue light emitting layer including a blue light emitting layer or an auxiliary light emitting layer capable of emitting different colors. The auxiliary light-emitting layer may be formed of one of a yellow-green light-emitting layer, a red light-emitting layer, and a green light-emitting layer, or a combination thereof. When the auxiliary light-emitting layer is further formed, the emission efficiency of the green light-emitting layer and the red light-emitting layer can be further improved. When forming the second light emitting layer (EML) 324 including the auxiliary light emitting layer, the yellow-green light emitting layer or the red light emitting layer or the green light emitting layer may be formed in the second light emitting layer (EML) ) 324, as shown in Fig. Further, a yellow-green light emitting layer, a red light emitting layer or a green light emitting layer may be the same as or different from the upper and lower portions of the second light emitting layer (EML) 324 as the auxiliary light emitting layer It is also possible. The position and the number of the light emitting layer can be selectively arranged depending on the configuration and characteristics of the device, and the present invention is not limited thereto.

When the auxiliary light emitting layer is formed in the second light emitting layer (EML) 324, the peak wavelength of the light emitting region of the second light emitting layer (EML) 324 may be in a range of 440 nm to 650 nm have. Here, the peak wavelength may be a light emitting region.

A first charge generating layer (CGL) 340 may be further formed between the first light emitting portion 310 and the second light emitting portion 320. The first charge generation layer (CGL) 340 may include an N-type charge generation layer (N-CGL) and a P-type charge generation layer (P-CGL).

(EML) 314, the first electron transport layer (ETL) 316, the first charge generation layer (CGL) 340, the second hole transport layer 322, the HBL , An electron blocking layer (EBL), a hole injection layer (HIL), and the like can be referred to as an organic layer. All the organic layers between the first emission layer (EML) 314) and the second emission layer (EML) 324 and the first emission layer (EML) 314 may be referred to as an organic layer. Accordingly, all organic layers between the first emission layer (EML) 314 and the second emission layer (EML) 324 may be referred to as a second organic layer.

(CGL) 340, regardless of the number or thickness of the first electron transport layer (ETL) 316 or the number or thickness of the second hole transport layer (HTL) 322, Irrespective of the number and thickness of the hole injection layer (HIL), or regardless of the number or thickness of the hole blocking layer (HBL) or the number or thickness of the electron blocking layer (EBL) Regardless of the number or thickness of the first light emitting layer (EML) 314 or the number or thickness of all the organic layers between the first electrode 302 and the first light emitting layer (EML) 314, The light emitting position L2 of the second light emitting layer (EML) 324 may be the same as the light emitting position of the first light emitting layer (EML) 314, regardless of the number or thickness of all the organic layers between the first light emitting layer (EML) 314 and the second light emitting layer Is set to be within a range of 1,250 to 1,750 angstroms from the first electrode 302. [ Alternatively, the emission position L2 of the second emission layer (EML) 324 is set to be within a range of 1,250 Å to 1,750 Å from the reflective surface of the first electrode 302.

Therefore, the number of the first organic layers, the number of the first organic layers, the number of the second organic layers, the thickness of the second organic layers, the number of the first light emitting layers, and the thickness of the first light emitting layer, The position L2 of the second emission layer (EML) 324 from the first electrode 302 may be set to be within a range of 1,250 Å to 1,750 Å. Or the thickness of the first organic layer, the thickness of the first organic layer, the thickness of the second organic layer, the number of the first light emitting layer, and the thickness of the first light emitting layer, The position L2 of the second emission layer (EML) 324 from the reflective surface of the first electrode 202 may be set to be within a range of 1,250 to 1,750 angstroms.

The third light emitting portion 330 may include a third electron transport layer (ETL) 336, a third emission layer (EML) 334, and a third hole transport layer (HTL) 332. Although not shown in the drawing, an electron injection layer (EIL) may be further formed on the third electron transport layer (ETL) 336. A hole injection layer (HIL) may be further formed under the third hole transport layer (HTL) 332. A second charge generating layer (CGL) 350 may be further formed between the second light emitting portion 320 and the third light emitting portion 330. The second charge generation layer (CGL) 350 may include an N-type charge generation layer (N-CGL) and a P-type charge generation layer (P-CGL).

A hole blocking layer (HBL) may further be formed on the third emission layer (EML) The third electron transport layer (ETL) 336 and the hole blocking layer HBL may be formed as one layer.

An electron blocking layer (EBL) may be further formed under the third emission layer (EML) The third hole transport layer (HTL) 332 and the electron blocking layer (EBL) may be formed as a single layer.

The third emission layer (EML) 334 may include a blue emission layer or a blue emission layer including an auxiliary emission layer capable of emitting different colors. The auxiliary light-emitting layer may be formed of one of a yellow-green light-emitting layer, a red light-emitting layer, and a green light-emitting layer, or a combination thereof. When the auxiliary light-emitting layer is further formed, the emission efficiency of the green light-emitting layer and the red light-emitting layer can be further improved.

When forming the third light emitting layer (EML) 334 including the auxiliary light emitting layer, the yellow-green light emitting layer or the red light emitting layer or the green light emitting layer is formed as the third light emitting layer (EML) 334 on the upper side or the lower side. Further, it is also possible that the yellow-green or red light emitting layer or the green light emitting layer is constituted by the same or different structure above and below the third light emitting layer (EML) 334 as the auxiliary light emitting layer It is possible. The position and the number of the light emitting layer can be selectively arranged depending on the configuration and characteristics of the device, and the present invention is not limited thereto.

When the auxiliary emission layer is formed in the third emission layer (EML) 334, the peak wavelength of the emission region of the third emission layer (EML) 334 may be in the range of 440 nm to 650 nm. have. Here, the peak wavelength may be a light emitting region.

(EML) 324, the second electron transport layer (ETL) 326, the second charge generation layer (CGL) 350, the third hole transport layer 332, the HBL , The electron blocking layer (EBL), the hole injection layer (HIL), and the like can be referred to as an organic layer. All the organic layers between the second emission layer (EML) 324 and the third emission layer (EML) 334 and the second emission layer (EML) 324 may be referred to as an organic layer. Accordingly, all of the organic layers between the second emission layer (EML) 324 and the third emission layer (EML) 334 may be referred to as a third organic layer.

(HTL) 332, regardless of the number or thickness of the second electron transport layer (ETL) 326, or the number or thickness of the second charge generation layer (CGL) (EML) 314, irrespective of the number or thickness of the second light emitting layer (EML) 314, or the number or thickness of the second light emitting layer (EML) 324, (EML) 314 and the second light emitting layer (EML) 324, regardless of the number or thickness of all the organic layers between the first light emitting layer (EML) 314 and the first light emitting layer Regardless of the number and thickness of organic layers or the number or thickness of all the organic layers between the second emission layer (EML) 324 and the third emission layer (EML) 334, the third emission layer (EML) 334 are set to be within a range of 2,500 to 3,000 angstroms from the first electrode 302. [ Alternatively, the emission position L3 of the third emission layer (EML) 334 is set to be within a range of 2,500 to 3,000 ANGSTROM from the reflective surface of the first electrode 302.

Therefore, the number of the at least one first organic layer, the thickness of the first organic layer, the number of the second organic layers, the thickness of the second organic layer, the number of the third organic layers, the thickness of the third organic layer, (L3) of the third light emitting layer (EML) 334 from the first electrode 302 regardless of the number of the light emitting layers, the thickness of the first light emitting layer, the number of the second light emitting layers, and the thickness of the second light emitting layer. Can be set to be within a range of 2,500 to 3,000 ANGSTROM. Or the number of the first organic layers, the thickness of the first organic layers, the number of the second organic layers, the thickness of the second organic layers, the number of the third organic layers, the thickness of the third organic layers, (EML) 334 from the reflective surface of the first electrode 302 regardless of the number of the light emitting layers, the thickness of the first light emitting layer, the number of the second light emitting layers, and the thickness of the second light emitting layer (L3) may be set to be within a range of 2,500 to 3,000 angstroms.

All layers such as the third emission layer (EML) 334, the third electron transport layer (ETL) 336, the hole blocking layer (HBL), and the electron injection layer (EIL) may be referred to as an organic layer. All organic layers between the third emission layer (EML) 334 and the second electrode 304 and the second electrode 304 and the third emission layer (EML) 334 may be referred to as an organic layer. Accordingly, all the organic layers, including the second electrode 304, between the third emission layer (EML) 334 and the second electrode 304 can be referred to as a fourth organic layer.

Regardless of the number or thickness of the third electron transport layer (ETL) 336 or the number or thickness of the electron injection layer (EIL), or regardless of the number or thickness of the hole blocking layer (HBL) Regardless of the number or thickness of the electrodes 304 or the number or thickness of the third emission layer (EML) 334 or between the substrate 301 and the first emission layer (EML) 314 Regardless of the number or thickness of organic layers or the number or thickness of all the organic layers between the first and second emission layers (EMLs) 314 and 324, or between the first and second emission layers (EMLs) (EML) 334 and the second electrode 304, regardless of the number or the thickness of all the organic layers between the third emission layer (EML) 334 and the third emission layer (EML) The position L0 of the second electrode 304 from the first electrode 302 is within a range of 4,700 A to 5,400 A, So that you can set. Alternatively, the position L0 of the second electrode 304 may be set to be within a range of 4,700 A to 5,400 A from the reflective surface of the first electrode 302.

Therefore, the number of the at least one first organic layer, the thickness of the first organic layer, the number of the second organic layers, the thickness of the second organic layer, the number of the third organic layers, the thickness of the third organic layer, The number of the first light emitting layers, the number of the organic layers, the thickness of the fourth organic layer, the number of the first light emitting layers, the thickness of the first light emitting layer, the number of the second light emitting layers, The position L0 of the second electrode 304 may be set to be within a range of 4,700 A to 5,400 A from the first electrode 302 regardless of the thickness of the first electrode 302. Or the number of the at least one first organic layer, the thickness of the first organic layer, the number of the second organic layers, the thickness of the second organic layer, the number of the third organic layers, the thickness of the third organic layer, The number of the first light emitting layers, the number of the organic layers, the thickness of the fourth organic layer, the number of the first light emitting layers, the thickness of the first light emitting layer, the number of the second light emitting layers, The position L0 of the second electrode 304 can be set to be within a range of 4,700 to 5,400 angstroms from the reflective surface of the first electrode 302 regardless of the thickness of the first electrode 302. [

27 shows an example of the present invention. The structure shown in FIG. 27 can be selectively formed according to the structure and characteristics of the white organic light emitting device, but is not limited thereto.

28 is a view showing a light emitting position of an organic light emitting diode according to an eighth embodiment of the present invention.

In FIG. 28, the abscissa axis represents a wavelength region of light, and the ordinate axis represents a light emitting position of the light emitting layers constituting the light emitting portion from the first electrode 302, which may be referred to as a contour map. Here, except for the first electrode 302 and the second electrode 304, the emission positions of the light emitting layers at the emission peak when the EPEL structure of the present invention is applied are shown. The light emitting regions of the light emitting layers have the maximum light emitting range.

Since the first emission layer (EML) 314 forming the first emission layer 310 is a yellow-green emission layer, the peak emission wavelength of the emission region of the first emission layer (EML) 314 peak wavelength range may range from 510 nm to 580 nm. It is necessary to emit light at 510 nm to 580 nm which is a light emitting region of a yellow-green light emitting layer, thereby achieving maximum efficiency in a white region of a contour map.

Therefore, the emission position of the first emission layer (EML) 314 is set in the range of 200 to 700 Å, and the emission peak 314E is positioned in the range of 510 nm to 580 nm. As a result, the first light emitting layer (EML) 314 emits light at 510 nm to 580 nm, thereby achieving maximum efficiency.

The first light emitting layer (EML) 314 of the first light emitting portion 310 may be composed of two layers, a red light emitting layer and a green light emitting layer, depending on the characteristics and structure of the device. The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. The peak wavelength of the luminescent region of the green light emitting layer may be in the range of 510 nm to 560 nm. Therefore, in this case, it is necessary to emit light at 510 nm to 650 nm, which is the light emitting region of the first light emitting layer (EML) 314, so that maximum efficiency can be obtained in the white region of the contour map.

The first light emitting layer (EML) 314 of the first light emitting portion 310 is formed of two layers of a red light emitting layer and a yellow-green light emitting layer according to the characteristics and structure of the device. can do. The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. The peak wavelength of the light emitting region of the yellow-green light emitting layer may be in the range of 510 nm to 580 nm. Therefore, in this case, it is necessary to emit light at 510 nm to 650 nm, which is the light emitting region of the first light emitting layer (EML) 314, so that maximum efficiency can be obtained in the white region of the contour map.

The first light emitting layer (EML) 314 of the first light emitting portion 310 may include two layers of a yellow light emitting layer and a red light emitting layer depending on the characteristics and structure of the device. The peak wavelength of the light emitting region of the yellow light emitting layer may be in the range of 540 nm to 580 nm. The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. Therefore, in this case, it is necessary to emit light at 540 to 650 nm, which is the light emitting region of the first light emitting layer (EML) 314, so that maximum efficiency can be obtained in the white region of the contour map.

The first light emitting layer (EML) 314 of the first light emitting portion 310 may be composed of two layers, a red light emitting layer and a green light emitting layer, depending on the characteristics and structure of the device. The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. The peak wavelength of the luminescent region of the green light emitting layer may be in the range of 510 nm to 560 nm. Therefore, in this case, it is necessary to emit light at 510 nm to 650 nm, which is the light emitting region of the first light emitting layer (EML) 314, so that maximum efficiency can be obtained in the white region of the contour map.

Accordingly, a yellow-green light-emitting layer, a yellow light-emitting layer, a red light-emitting layer, a red light-emitting layer, and a green light-emitting layer are formed as the first light-emitting layer (EML) A peak wavelength range of the luminescent region of the first emission layer (EML) 314 is 510 (nm), and a peak wavelength of the luminescent region of the first emission layer (EML) Nm to 650 nm. In this case, it is necessary to emit light at 510 nm to 650 nm, which is a light emitting region of the first light emitting layer (EML) 314, so that maximum efficiency can be obtained in the white region of the contour map.

In FIG. 28, the first light emitting layer (EML) 314 does not include an auxiliary light emitting layer and the first light emitting layer (EML) 314 shows a light emitting position using a yellow-green light emitting layer as an example. Accordingly, the peak wavelength range of the emission region of the second emission layer (EML) 314 can exhibit the maximum efficiency in the range of 510 nm to 580 nm.

Since the second emission layer (EML) 324 of the second emission layer 320 is a blue emission layer, the peak wavelength range of the emission region of the second emission layer (EML) May range from 440 nm to 480 nm. It is necessary to emit light at 440 nm to 480 nm which is a light emitting region of a blue light emitting layer, so that maximum efficiency can be obtained in a white region of a contour map.

Therefore, the light emitting position of the second light emitting layer (EML) 324 is set in the range of 1,250 Å to 1,750 Å, so that the emission peak 324E of the second light emitting layer (EML) Nm. Therefore, the second light emitting layer (EML) 324 emits light at 440 nm to 480 nm, thereby achieving maximum efficiency.

The blue light emitting layer may include one of a blue light emitting layer, a deep blue light emitting layer, and a sky blue light emitting layer.

A yellow-green or red light emitting layer or a green light emitting layer is formed as an auxiliary light emitting layer in the second light emitting layer (EML) 324 constituting the second light emitting portion 320 , The peak wavelength range of the emission region of the second emission layer (EML) 324 may range from 440 nm to 650 nm. Therefore, in this case, it is necessary to emit light at 440 nm to 650 nm, which is the light emitting region of the second light emitting layer (EML) 324, so that maximum efficiency can be obtained in the white region of the contour map.

In FIG. 28, an auxiliary light emitting layer is not included in the second light emitting layer (EML) 324, and the second light emitting layer (EML) 324 shows a light emitting position using a blue light emitting layer as an example. Therefore, the peak wavelength range of the emission region of the second emission layer (EML) 324 can reach the maximum efficiency in the range of 440 nm to 480 nm.

Since the third emission layer (EML) 334 of the third emission layer 330 is a blue emission layer, the peak wavelength range of the emission region of the third emission layer (EML) May range from 440 nm to 480 nm. It is necessary to emit light at 440 nm to 480 nm which is a light emitting region of a blue light emitting layer, so that maximum efficiency can be obtained in a white region of a contour map.

Accordingly, the light emitting position of the third light emitting layer (EML) 334 is set in the range of 2,500 to 3,000 Å, so that the emission peak 334E of the third light emitting layer (EML) Nm. As a result, the third light emitting layer (EML) 334 emits light at 440 nm to 480 nm, thereby achieving maximum efficiency.

The blue light emitting layer may include one of a blue light emitting layer, a deep blue light emitting layer, and a sky blue light emitting layer.

A yellow-green or red light emitting layer or a green light emitting layer is formed as an auxiliary light emitting layer in the third light emitting layer (EML) 334 constituting the third light emitting portion 330 , The peak wavelength range of the emission region of the third emission layer (EML) 334 may range from 440 nm to 650 nm. Therefore, in this case, it is necessary to emit light at 440 to 650 nm, which is a light emitting region of the third light emitting layer (EML) 334, so that maximum efficiency can be obtained in the white region of the contour map.

In FIG. 28, the third light emitting layer (EML) 334 does not include an auxiliary light emitting layer, and the third light emitting layer (EML) 334 shows a light emitting position using a blue light emitting layer as an example. Accordingly, the peak wavelength range of the emission region of the third emission layer (EML) 334 can exhibit the maximum efficiency in the range of 440 nm to 480 nm.

As described above, the position of the emission peak changes according to the emission position of the emission layer. The present invention applies an emission position of emission (EPEL) structure in which the emission peak of the emission layer is positioned in a desired emission region by setting the emission position of the emission layer constituting the emission portion.

Accordingly, the emission peak is positioned at a specific wavelength by applying the emission position of the emission layer (EPEL) structure to the emission layer, so that the emission layers can maximize efficiency in the light corresponding to a specific wavelength.

A maximum emission range of the light emitting layers in the emission region having the specific wavelength can be referred to as a maximum emission range. The maximum emission range of the first emission layer is 530 nm to 570 nm, the maximum emission range of the second emission layer is 440 nm to 470 nm, and the maximum emission range of the third emission layer is 440 nm to 470 nm.

That is, in order to emit light at 440 nm to 470 nm, which is the maximum emission range of the blue emission layer, and 530 nm to 570 nm, which is the maximum emission range of the yellow-green emission layer, The maximum efficiency can be achieved in the white area. It can be seen that the light emitting layer can achieve the maximum efficiency by setting the light emitting position of the light emitting layer of the present invention to correspond to the light emitting region. The EPEL structure of the present invention is characterized in that the number of the first organic layers, the thickness of the first organic layers, the number of the second organic layers, the thickness of the second organic layers, the number of the third organic layers, The thickness of the fourth organic layer, the thickness of the fourth organic layer, the number of the first light emitting layer, the thickness of the first light emitting layer, the number of the second light emitting layer, the thickness of the second light emitting layer, The first light emitting layer, the second light emitting layer, and the third light emitting layer have a maximum light emitting range regardless of the thickness of the third light emitting layer, so that the light emitting layer can achieve the maximum efficiency.

29 is a diagram showing an EL spectrum according to an eighth embodiment of the present invention.

In Fig. 29, the embodiment (minimum position) is a portion set to the minimum position when the light emitting positions of the light emitting layers are set. For example, when the emission position L1 of the first emission layer (EML) 314 is in the range of 200 to 700 angstroms from the first electrode 302, the minimum position is set to 200 angstroms.

The embodiment (maximum position) is a portion set to the maximum position when the light emitting positions of the light emitting layers are set. For example, when the emission position L1 of the first emission layer (EML) 314 is in the range of 200 to 700 angstroms from the first electrode 302, the maximum position is set to 700 angstroms.

The embodiment (optimum position) is a portion set to the light emitting position of the eighth embodiment of the present invention. For example, when the emission position L1 of the first emission layer (EML) 314 is in the range of 200 to 700 angstroms from the first electrode 302, the emission position of the embodiment is set in the range of 200 to 700 angstroms .

As shown in FIG. 29, when the minimum position of the emission position is deviated from the optimum position in the EPEL (Emission Position of Emitting Layers) structure of the present invention, it is as follows. The emission intensity decreases at 440 nm to 480 nm, which is the peak wavelength range of blue light. It can be seen that the luminescence intensity decreases in the range of 510 nm to 580 nm, which is the peak wavelength range of the yellow-green light. It can be seen that the emission intensity decreases at 600 nm to 650 nm, which is the peak wavelength range of red light.

In the EPEL (Emission Position of Emitting Layers) structure of the present invention, when the maximum position of the emission position is deviated, the optimum position is as follows. It can be seen that the luminescence intensity decreases at 440 nm to 480 nm, which is the peak wavelength range of blue light, and is out of the peak wavelength range of blue light. It can be seen that the luminescence intensity decreases in the range of 510 nm to 580 nm, which is the peak wavelength range of the yellow-green light.

Accordingly, it can be seen that the emission intensity increases in the peak wavelength range of blue light when the optimum position of the present invention is set, compared with the case where the minimum or maximum position of the embodiment is set. Further, it can be seen that the emission intensity increases in the peak wavelength range of yellow-green light when the optimum position of the present invention is set to the minimum position or the maximum position of the embodiment. It can be seen that the emission intensity is increased in the peak wavelength range of red light when it is set to the optimum position of the present invention.

The panel efficiency of the white organic light emitting device and the comparative example using the EPEL (Emission Position of Emitting Layers) structure of the present invention are as shown in Table 15 below. And the efficiency of the comparative example is taken as 100%, the efficiency of the eighth embodiment of the present invention is shown.

Table 15 below compares the efficiency of the comparative example and the embodiment of the present invention. The comparative example is a Bottom Emission type white organic light emitting device including a first light emitting portion, a second light emitting portion and a third light emitting portion. The first light emitting portion is a blue light emitting layer, the second light emitting portion is a yellow- Yellow-Green) light-emitting layer, and the third light-emitting portion is a blue light-emitting layer. The embodiment is a top emission type white organic light emitting device when an optimum position of an EPEL (Emission Position of Emitting Layers) structure of the present invention is applied.

As shown in Table 15, when the efficiency of the comparative example is 100% when the EPEL structure of the present invention is applied to the comparative example, the red efficiency is increased by about 77% and the green efficiency is 64 %, Respectively. It can be seen that the blue efficiency increased by about 51% and the white efficiency increased by about 68%.

The panel efficiency of the white organic light emitting device to which the EPEL (Emission Position of Emitting Layers) structure of the present invention is applied and the comparative example are as shown in Table 16 below.

Table 16 below shows the efficiencies of the embodiment (minimum position) and the embodiment (maximum position) when the efficiency of the embodiment (optimum position) is taken as 100%.

The panel efficiency was measured when the driving current density was 10 mA / cm ² . When the panel efficiency of the embodiment is 100%, the panel efficiency of the embodiment (minimum position) and the embodiment (maximum position) are measured.

As shown in Table 16, the efficiency of red, green, blue, and white is reduced at the boundary between the embodiment (minimum position) and the embodiment (maximum position) . In Table 14 of the seventh embodiment of the present invention and Table 16 of the eighth embodiment of the present invention, green, blue (blue), and blue (green) ) And white efficiency are further improved. Therefore, according to the eighth embodiment of the present invention, it is possible to provide an organic light emitting display device with improved efficiency. It can be seen that the efficiencies of red, green, blue, and white are further reduced in the embodiment (minimum position) than in the embodiment (maximum position).

Therefore, it can be seen that the panel efficiency decreases when the optimal position of the emission position of the EPEL structure of the present invention is deviated.

As described in the eighth embodiment of the present invention, the organic light emitting device may be an organic light emitting device of the top emission type.

The second light emitting layer and the third light emitting layer may include a light emitting layer emitting the same color.

The position of the second electrode may be set in the range of 4,700 A to 5,400 A from the first electrode.

The light emitting position of the first light emitting layer can be set in the range of 200 Å to 700 Å from the first electrode.

The light emitting position of the second light emitting layer may be set in the range of 1,250 Å to 1,750 Å from the first electrode.

The light emitting position of the third light emitting layer may be set in the range of 2,500 to 3,000 angstroms from the first electrode.

The first light emitting layer may include a yellow-green light emitting layer, or a yellow light emitting layer and a red light emitting layer, or a red light emitting layer and a green light emitting layer, or a yellow-green light emitting layer and a red light emitting layer, or a combination thereof.

The second light emitting layer and the third light emitting layer may be composed of a blue light emitting layer, a blue light emitting layer and a yellow-green light emitting layer, or a blue light emitting layer and a red light emitting layer, or a blue light emitting layer and a green light emitting layer, or a combination thereof.

The light emitting region of the first light emitting layer may range from 510 nm to 650 nm, the light emitting region of the second light emitting layer may range from 440 nm to 650 nm, and the light emitting region of the third light emitting layer may range from 440 nm to 650 nm.

Wherein the maximum emission range of the first emission layer is in the range of 530 nm to 570 nm, the maximum emission range of the second emission layer is in the range of 440 nm to 470 nm, and the maximum emission range of the third emission layer is in the range of 440 nm to 470 nm .

As described above, it can be seen that the emission intensity of the light emitting layer can be increased when the EPEL (Emission Position of Emitting Layers) structure of the present invention is applied. Further, it can be seen that the panel efficiency is improved because the emission intensity is increased.

30 is a schematic view showing a white organic light emitting device according to a ninth embodiment of the present invention. In describing the present embodiment, description of the same or corresponding elements to those of the previous embodiment will be omitted. In this embodiment, the light emitting position of the light emitting layers is set from the second electrode, and the light emitting position can be set from the second electrode according to the device design.

The white organic light emitting device 300 shown in FIG. 30 includes a first light emitting portion 310 and a second light emitting portion 310 between a first electrode 302 and a second electrode 304, and first and second electrodes 302 and 304, And a third light emitting portion 330. The position of the second electrode 304 is set to be within a range of 4,700 A to 5,400 A from the first electrode 302. The emission peak of the light emitting layers constituting the first, second and third light emitting units 310, 320 and 330 may be set by setting the position L0 of the first electrode 302, Can be positioned at a specific wavelength, and the efficiency of the light emitting layers can be improved by emitting light of the specific wavelength. The first light emitting portion, the second light emitting portion, and the third light emitting portion may include an Emission Position of Emitting Layers (EPEL) having a maximum light emitting range in the light emitting regions of the first light emitting layer, the second light emitting layer, Structure. In this embodiment, the two light emitting layers of the first, second, and third light emitting layers include a light emitting layer that emits the same color, thereby providing a white organic light emitting device capable of further improving the light emitting efficiency do. The light emitting layer emitting the same color may be referred to as a light emitting layer containing at least one light emitting layer emitting the same color.

The third light emitting portion 330 may include a third electron transport layer (ETL) 336, a third emission layer (EML) 334, and a third hole transport layer (HTL) 332. Although not shown in the drawing, an electron injection layer (EIL) may be further formed on the third electron transport layer (ETL) 336. A hole injection layer (HIL) may be further formed under the third hole transport layer (HTL) 332. A hole blocking layer (HBL) may further be formed on the third emission layer (EML) The third electron transport layer (ETL) 336 and the hole blocking layer HBL may be formed as one layer.

An electron blocking layer (EBL) may be further formed under the third emission layer (EML) The third hole transport layer (HTL) 332 and the electron blocking layer (EBL) may be formed as a single layer.

The third emission layer (EML) 334 may include a blue emission layer or a blue emission layer including an auxiliary emission layer capable of emitting different colors. The blue light emitting layer may include one of a blue light emitting layer, a deep blue light emitting layer, and a sky blue light emitting layer. Since the deep blue light emitting layer is located in a shorter wavelength region than the blue light emitting layer, the deep blue light emitting layer can be advantageous for improving the color reproduction rate and brightness.

The auxiliary light-emitting layer may be formed of one of a yellow-green light-emitting layer, a red light-emitting layer, and a green light-emitting layer, or a combination thereof. When the auxiliary light-emitting layer is further formed, the emission efficiency of the green light-emitting layer and the red light-emitting layer can be further improved. When forming the third light emitting layer (EML) 334 including the auxiliary light emitting layer, the yellow-green light emitting layer or the red light emitting layer or the green light emitting layer is formed as the third light emitting layer (EML) 334 on the upper side or the lower side. Further, it is also possible that the yellow-green or red light emitting layer or the green light emitting layer is constituted by the same or different structure above and below the third light emitting layer (EML) 334 as the auxiliary light emitting layer It is possible. The position and the number of the light emitting layer can be selectively arranged depending on the configuration and characteristics of the device, and the present invention is not limited thereto.

When the auxiliary emission layer is formed in the third emission layer (EML) 334, the peak wavelength of the emission region of the third emission layer (EML) 334 may be in the range of 440 nm to 650 nm. have. Here, the peak wavelength may be a light emitting region.

All layers such as the third electron transport layer (ETL) 336, the third emission layer (EML) 334, the electron injection layer (EIL), and the hole blocking layer (HBL) The organic layer may include all the organic layers located between the second electrode 304 and the third emission layer (EML) 334, the second electrode 304, and the third emission layer (EML) . Accordingly, all the organic layers located between the second electrode 304 and the third emission layer (EML) 334 may be referred to as a fourth organic layer.

Regardless of the number or thickness of the third electron transport layer (ETL) 336 or the number or thickness of the third emission layer (EML) 334, or the number or thickness of the electron injection layer (EIL) Or between the second electrode 304 and the third emission layer (EML) 334, irrespective of the number or thickness of the hole blocking layer (HBL) or the number or thickness of the second electrode 304, The light emitting position L3 of the third emission layer (EML) 334 is set to be within a range of 2,050 A to 2,750 ANGSTROM from the second electrode 304 regardless of the number and thickness of all organic layers. Therefore, the third light emitting layer (EML) can be emitted from the second electrode 304 regardless of the number of the at least one fourth organic layer, the thickness of the fourth organic layer, the number of the third light emitting layer, The position L3 of the light emitting portion 334 may be set to be within a range of 2,050 A to 2,750 ANGSTROM.

The second light emitting unit 320 may include a second hole transport layer (HTL) 322, a second light emitting layer (EML) 324, and a second electron transport layer (ETL) 326.

A hole injecting layer (HIL) may be further formed under the second hole transporting layer (HTL) 322. A hole blocking layer (HBL) may be further formed on the second emitting layer (EML) have. The second electron transport layer (ETL) 326 and the hole blocking layer HBL may be formed as a single layer.

An electron blocking layer (EBL) may be further formed under the second emission layer (EML) 324. The second hole transport layer (HTL) 322 and the electron blocking layer EBL may be formed as a single layer.

The second light emitting layer (EML) 324 is composed of a blue light emitting layer including a blue light emitting layer or an auxiliary light emitting layer capable of emitting different colors. The blue light emitting layer may include one of a blue light emitting layer, a deep blue light emitting layer, and a sky blue light emitting layer. Since the deep blue light emitting layer is located in a shorter wavelength region than the blue light emitting layer, the deep blue light emitting layer can be advantageous for improving the color reproduction rate and brightness.

The auxiliary light-emitting layer may be formed of one of a yellow-green light-emitting layer, a red light-emitting layer, and a green light-emitting layer, or a combination thereof. When the auxiliary light-emitting layer is further formed, the emission efficiency of the green light-emitting layer and the red light-emitting layer can be further improved. When forming the second light emitting layer (EML) 324 including the auxiliary light emitting layer, the yellow-green light emitting layer or the red light emitting layer or the green light emitting layer may be formed in the second light emitting layer (EML) ) 324, as shown in Fig. Further, a yellow-green light emitting layer, a red light emitting layer or a green light emitting layer may be the same as or different from the upper and lower portions of the second light emitting layer (EML) 324 as the auxiliary light emitting layer It is also possible. The position and the number of the light emitting layer can be selectively arranged depending on the configuration and characteristics of the device, and the present invention is not limited thereto.

When the auxiliary light emitting layer is formed in the second light emitting layer (EML) 324, the peak wavelength of the light emitting region of the second light emitting layer (EML) 324 may be in a range of 440 nm to 650 nm have. Here, the peak wavelength may be a light emitting region.

A second charge generating layer (CGL) 350 may be further formed between the second light emitting portion 320 and the third light emitting portion 330. The second charge generating layer (CGL) Type charge generation layer (N-CGL) and a P-type charge generation layer (P-CGL).

The second light emitting layer (EML) 324, the second electron transport layer (ETL) 326, the second charge generation layer (CGL) 250, the third hole transport layer (HTL) All layers such as a layer (HBL), an electron blocking layer (EBL), and a hole injection layer (HIL) can be referred to as an organic layer. All organic layers between the third emission layer (EML) 334 and the second emission layer (EML) 324 and the second emission layer (EML) 324 may be referred to as an organic layer. Accordingly, all the organic layers between the third emission layer (EML) 334 and the second emission layer (EML) 324 may be referred to as a third organic layer.

(CGL) 350, regardless of the number or thickness of the third hole transporting layer (HTL) 332, or the number or thickness of the second electron transporting layer (ETL) 326, Irrespective of the number and thickness of the hole injection layer (HIL), or regardless of the number or thickness of the hole blocking layer (HBL) or the number or thickness of the electron blocking layer (EBL) (EML) 324, regardless of the number or thickness of the third light emitting layer (EML) 334 or the number or thickness of the second light emitting layer (EML) 324 or between the second electrode 304 and the third light emitting layer Regardless of the number or thickness of all the organic layers between the second emission layer (EML) 324 and the third emission layer (EML) 334, The light emitting position L2 of the second light emitting layer 324 is set to be within a range of 3,350 Å to 3,950 Å from the second electrode 304 do. Therefore, the number of the at least one fourth organic layer, the thickness of the fourth organic layer, the number of the third organic layers, the thickness of the third organic layer, the number of the third light emitting layers, the thickness of the third light emitting layer, The position L2 of the second light emitting layer (EML) 324 from the second electrode 304 can be set to be within the range of 3,350 Å to 3,950 Å, regardless of the number of the light emitting layers and the thickness of the second light emitting layer .

The first light emitting part 310 includes a first HTL 312, a first EML 314 and a first ETL 316 on the first electrode 302 .

An auxiliary electrode 303 may be formed on the first electrode 302. The auxiliary electrode 203 may not be formed depending on the characteristics and structure of the device.

Although not shown in the drawing, a hole injection layer (HIL) may be additionally formed on the first electrode 302.

A hole blocking layer (HBL) may further be formed on the first emission layer (EML) 314. The first electron transport layer (ETL) 316 and the hole blocking layer HBL may be formed as one layer.

An electron blocking layer (EBL) may be further formed under the first emission layer (EML) 314. The first hole transport layer (HTL) 312 and the electron blocking layer (EBL) may be formed as one layer.

The first emission layer (EML) 314 is composed of a yellow-green emission layer. The peak wavelength of the light emitting region of the yellow-green light emitting layer may be in the range of 510 nm to 580 nm.

The first light emitting layer (EML) 314 of the first light emitting portion 310 may be composed of two layers, a red light emitting layer and a green light emitting layer, depending on the characteristics and structure of the device. The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. The peak wavelength of the luminescent region of the green light emitting layer may be in the range of 510 nm to 560 nm. When the red light emitting layer and the green light emitting layer are formed of two layers, the color reproducibility can be improved. When the red light emitting layer and the green light emitting layer are composed of two layers, the peak wavelength of the light emitting region may be in the range of 510 nm to 650 nm. Here, the peak wavelength may be a light emitting region.

The first light emitting layer (EML) 314 of the first light emitting portion 310 is formed of two layers of a red light emitting layer and a yellow-green light emitting layer according to the characteristics and structure of the device. can do. The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. The peak wavelength of the light emitting region of the yellow-green light emitting layer may be in the range of 510 nm to 580 nm. When the red light-emitting layer and the yellow-green light-emitting layer are composed of two layers, the light-emitting efficiency of the red light-emitting layer can be increased. The peak wavelength range of the light-emitting layer including red light, which is an auxiliary light-emitting layer, in the yellow-green light-emitting layer may be 510 nm to 650 nm. Here, the peak wavelength may be a light emitting region.

In addition, the first light emitting portion 310 may include two layers of a yellow light emitting layer and a red light emitting layer depending on the characteristics and structure of the device. The peak wavelength of the light emitting region of the yellow light emitting layer and the red light emitting layer may be in the range of 540 nm to 650 nm. Here, the peak wavelength may be a light emitting region. The light emitting efficiency of the red light emitting layer can be increased when the light emitting layer is composed of two layers of the yellow light emitting layer and the red light emitting layer.

A first charge generating layer (CGL) 340 may be further formed between the first light emitting portion 310 and the second light emitting portion 320. The charge generation layer 340 may include an N-type charge generation layer (N-CGL) and a P-type charge generation layer (P-CGL).

(EML) 314, the first electron transport layer (ETL) 316, the first charge generation layer (CGL) 340, the second hole transport layer 322, the HBL , An electron blocking layer (EBL), a hole injection layer (HIL), and the like can be referred to as an organic layer. All the organic layers between the first emission layer (EML) 314) and the second emission layer (EML) 324 and the first emission layer (EML) 314 may be referred to as an organic layer. Accordingly, all organic layers between the first emission layer (EML) 314 and the second emission layer (EML) 324 may be referred to as a second organic layer.

Regardless of the number or thickness of the first electron transport layer (ETL) 316,

Regardless of the number or thickness of the hole transport layer (HTL) 322 or the number or thickness of the first charge generation layer (CGL) 340 or the number or thickness of the hole blocking layer (HBL), or Regardless of the number or thickness of the electron blocking layer EBL or the number or thickness of the hole injection layer HIL or the number or thickness of the third emission layer (EML) 334, (EML) 324, regardless of the number or thickness of the second emission layer (EML) 324 or the number or thickness of the first emission layer (EML) 314, or between the second electrode 304 and the third emission layer Regardless of the number or thickness of all the organic layers between the second light emitting layer (EML) 324 and the third light emitting layer (EML) 334, or the number or thickness of all the organic layers between the second light emitting layer (EML) 314, regardless of the number or thickness of all the organic layers between the light emitting layer (EML) 314 and the second light emitting layer (EML) Light-emitting position (L1) is set to be located within the range of 4,450Å to 4,950Å from the second electrode 304.

Therefore, the number of the at least one fourth organic layer, the thickness of the fourth organic layer, the number of the third organic layers, the thickness of the third organic layer, the number of the second organic layers, the thickness of the second organic layer, Irrespective of the number of the light emitting layers, the thickness of the third light emitting layer, the number of the second light emitting layers, the thickness of the second light emitting layer, the number of the first light emitting layers, and the thickness of the first light emitting layer, The position L1 of the first light emitting layer (EML) 314 can be set to be within a range of 4,450 to 4,950 ANGSTROM.

The first hole transport layer (HTL) 312, the electron blocking layer (EBL), and the hole injection layer (HIL) may all be referred to as an organic layer. All the organic layers between the first electrode 302 and the first emission layer (EML) 314 and the auxiliary electrode 303 may be referred to as an organic layer. Accordingly, all of the organic layers between the first electrode 302 and the first emission layer (EML) 314 may be referred to as a first organic layer.

Regardless of the number or thickness of the first hole transporting layer 312 or the number or thickness of the auxiliary electrode 303 or the thickness or thickness of the electron blocking layer EBL, (EML) 324, regardless of the number or thickness of the first light emitting layer (EML) 324 or the number or thickness of the third light emitting layer (EML) 334, Regardless of the number or thickness of the light emitting layer (EML) 314 or the number or thickness of all the organic layers between the second electrode 304 and the third light emitting layer (EML) 334, (EML) 314 and the second light emitting layer (EML) 324, regardless of the number or thickness of all the organic layers between the first light emitting layer (EML) 324 and the third light emitting layer (EML) ) Or between the first electrode 302 and the first emission layer (EML) 314, irrespective of the number or thickness of all the organic layers between the first electrode 302 and the first emission layer The number, regardless of the thickness, position (L0) of the first electrode 302 from the second electrode 304 may be set so as to be positioned in the range of 4,700Å to 5,400Å.

Therefore, the number of the at least one fourth organic layer, the thickness of the fourth organic layer, the number of the third organic layers, the thickness of the third organic layer, the number of the second organic layers, the thickness of the second organic layer, The number of the first light emitting layers, the number of the first light emitting layers, the number of the organic layers, the thickness of the first organic layer, the number of the third light emitting layers, the thickness of the third light emitting layer, The position L0 of the first electrode 302 from the second electrode 304 can be set to be within a range of 4,700 A to 5,400 A, regardless of the thickness of the first electrode 302.

Here, the emission position L1 of the first emission layer (EML) 314 may be set to be within a range of 4,450 Å to 4,950 Å from the second electrode 304. The position L0 of the first electrode 302 may be set to be within a range of 4,700 A to 5,400 A from the second electrode 304. When the emission position L1 of the first emission layer 314 is set to 4,950 ANGSTROM from the second electrode 304, the position L0 of the first electrode 302 is set to the second electrode 304 304 to 5,000A to 5,400A.

Accordingly, the present invention provides a method of manufacturing a light emitting device, comprising the steps of: preparing a first organic layer, a second organic layer, a second organic layer, The number of the third organic layers, the thickness of the fourth organic layer, the number of the first light emitting layers, the thickness of the first light emitting layer, the number of the second light emitting layers, the thickness of the second light emitting layer, The positions of the first electrode 302 and the positions of the light emitting layers can be set from the second electrode 304 regardless of the thickness of the third light emitting layer.

The structure shown in FIG. 30 shows an example of the present invention. The structure shown in FIG. 30 can be selectively formed according to the structure and characteristics of the white organic light emitting device, but is not limited thereto.

31 is a view showing a light emitting position of an organic light emitting diode according to a ninth embodiment of the present invention.

In FIG. 31, the abscissa represents the wavelength region of light, and the ordinate represents the emission position of the light emitting layers constituting the light emitting portion from the first electrode 302, which may be referred to as a contour map. Here, except for the first electrode 302 and the second electrode 304, the emission positions of the light emitting layers at the emission peak when the EPEL structure of the present invention is applied are shown. The light emitting regions of the light emitting layers have the maximum light emitting range. 31 shows the light emitting positions of the light emitting layers except for the thickness of the second electrode 304 of 1,000 Å, and the thickness of the second electrode 304 does not limit the content of the present invention.

Since the third emission layer (EML) 334 of the third emission layer 330 is a blue emission layer, the peak wavelength range of the emission region of the third emission layer (EML) May range from 440 nm to 480 nm. It is necessary to emit light at 440 nm to 480 nm which is a light emitting region of a blue light emitting layer, so that maximum efficiency can be obtained in a white region of a contour map. 31, the light emitting position of the third emission layer (EML) 334 is shown as 1,050 Å to 1,750 Å, which is a value obtained by subtracting 1,000 Å which is the thickness of the second electrode 304. Accordingly, the emission position of the third emission layer (EML) 334 may range from 2,050 A to 2,750 A from the second electrode 304. The same can be applied to the emission position of the second emission layer (EML) 324 and the emission position of the first emission layer (EML) 314.

Accordingly, the emission position of the third emission layer (EML) 334 is set to a range of 2,050 Å to 2,750 Å, so that the emission peak 334E of the third emission layer (EML) Nm. As a result, the third light emitting layer (EML) 334 emits light at 440 nm to 480 nm, thereby achieving maximum efficiency.

The blue light emitting layer may include one of a blue light emitting layer, a deep blue light emitting layer, and a sky blue light emitting layer.

A yellow-green or red light emitting layer or a green light emitting layer is formed as an auxiliary light emitting layer in the third light emitting layer (EML) 334 constituting the third light emitting portion 330 , The peak wavelength range of the emission region of the third emission layer (EML) 334 may range from 440 nm to 650 nm. Therefore, in this case, it is necessary to emit light at 440 to 650 nm, which is a light emitting region of the third light emitting layer (EML) 334, so that maximum efficiency can be obtained in the white region of the contour map.

In FIG. 31, the third light emitting layer (EML) 334 does not include an auxiliary light emitting layer, and the third light emitting layer (EML) 334 shows a light emitting position using a blue light emitting layer as an example. Accordingly, the peak wavelength range of the emission region of the third emission layer (EML) 334 can exhibit the maximum efficiency in the range of 440 nm to 480 nm.

Since the second emission layer (EML) 324 of the second emission layer 320 is a blue emission layer, the peak wavelength range of the emission region of the second emission layer (EML) May range from 440 nm to 480 nm. It is necessary to emit light at 440 nm to 480 nm which is a light emitting region of a blue light emitting layer, so that maximum efficiency can be obtained in a white region of a contour map.

Accordingly, the light emitting position of the second light emitting layer (EML) 324 is set in the range of 3,350 Å to 3,950 Å, and the emission peak 324E of the second light emitting layer (EML) 324 is set to 440 nm to 480 Nm. Therefore, the second light emitting layer (EML) 324 emits light at 440 nm to 480 nm, thereby achieving maximum efficiency.

The blue light emitting layer may include one of a blue light emitting layer, a deep blue light emitting layer, and a sky blue light emitting layer.

A yellow-green or red light emitting layer or a green light emitting layer is formed as an auxiliary light emitting layer in the second light emitting layer (EML) 324 constituting the second light emitting portion 320 , The peak wavelength range of the emission region of the second emission layer (EML) 324 may range from 440 nm to 650 nm. Therefore, in this case, it is necessary to emit light at 440 nm to 650 nm, which is the light emitting region of the second light emitting layer (EML) 324, so that maximum efficiency can be obtained in the white region of the contour map.

31 does not include an auxiliary light emitting layer in the second light emitting layer (EML) 324, and the second light emitting layer (EML) 324 shows a light emitting position using a blue light emitting layer as an example. Therefore, the peak wavelength range of the emission region of the second emission layer (EML) 324 can reach the maximum efficiency in the range of 440 nm to 480 nm.

Since the first emission layer (EML) 314 forming the first emission layer 310 is a yellow-green emission layer, the peak emission wavelength of the emission region of the first emission layer (EML) 314 peak wavelength range may range from 510 nm to 580 nm. It is necessary to emit light at 510 nm to 580 nm which is a light emitting region of a yellow-green light emitting layer, thereby achieving maximum efficiency in a white region of a contour map.

Therefore, the emission position of the first emission layer (EML) 314 is set in the range of 200 to 700 Å, and the emission peak 314E is positioned in the range of 510 nm to 580 nm. As a result, the first light emitting layer (EML) 314 emits light at 510 nm to 580 nm, thereby achieving maximum efficiency.

The first light emitting layer (EML) 314 of the first light emitting portion 310 may be composed of two layers, a red light emitting layer and a green light emitting layer, depending on the characteristics and structure of the device. The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. The peak wavelength of the luminescent region of the green light emitting layer may be in the range of 510 nm to 560 nm. Therefore, in this case, it is necessary to emit light at 510 nm to 650 nm, which is the light emitting region of the first light emitting layer (EML) 314, so that maximum efficiency can be obtained in the white region of the contour map.

The first light emitting layer (EML) 314 of the first light emitting portion 310 is formed of two layers of a red light emitting layer and a yellow-green light emitting layer according to the characteristics and structure of the device. can do. The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. The peak wavelength of the light emitting region of the yellow-green light emitting layer may be in the range of 510 nm to 580 nm. Therefore, in this case, it is necessary to emit light at 510 nm to 650 nm, which is the light emitting region of the first light emitting layer (EML) 314, so that maximum efficiency can be obtained in the white region of the contour map.

The first light emitting layer (EML) 314 of the first light emitting portion 310 may include two layers of a yellow light emitting layer and a red light emitting layer depending on the characteristics and structure of the device. The peak wavelength of the light emitting region of the yellow light emitting layer may be in the range of 540 nm to 580 nm. The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. Therefore, in this case, it is necessary to emit light at 540 to 650 nm, which is the light emitting region of the first light emitting layer (EML) 314, so that maximum efficiency can be obtained in the white region of the contour map.

Accordingly, a yellow-green light-emitting layer, a yellow light-emitting layer, a red light-emitting layer, a red light-emitting layer, and a green light-emitting layer are formed as the first light-emitting layer (EML) A peak wavelength range of the luminescent region of the first emission layer (EML) 314 is 510 (nm), and a peak wavelength of the luminescent region of the first emission layer (EML) Nm to 650 nm. In this case, it is necessary to emit light at 510 nm to 650 nm, which is a light emitting region of the first light emitting layer (EML) 314, so that maximum efficiency can be obtained in the white region of the contour map.

31 does not include an auxiliary light emitting layer in the first light emitting layer (EML) 314, and the first light emitting layer (EML) 314 shows a light emitting position using a yellow-green light emitting layer as an example. Accordingly, the peak wavelength range of the emission region of the second emission layer (EML) 314 can exhibit the maximum efficiency in the range of 510 nm to 580 nm.

As described above, the position of the emission peak changes according to the emission position of the emission layer. The present invention applies an emission position of emission (EPEL) structure in which the emission peak of the emission layer is positioned in a desired emission region by setting the emission position of the emission layer constituting the emission portion.

Accordingly, the emission peak is positioned at a specific wavelength by applying the emission position of the emission layer (EPEL) structure to the emission layer, so that the emission layers can maximize efficiency in the light corresponding to a specific wavelength.

A maximum emission range of the light emitting layers in the emission region having the specific wavelength can be referred to as a maximum emission range. The maximum emission range of the first emission layer is 530 nm to 570 nm, the maximum emission range of the second emission layer is 440 nm to 470 nm, and the maximum emission range of the third emission layer is 440 nm to 470 nm.

That is, in order to emit light at 440 nm to 470 nm, which is the maximum emission range of the blue emission layer, and 530 nm to 570 nm, which is the maximum emission range of the yellow-green emission layer, The maximum efficiency can be achieved in the white area. It can be seen that the light emitting layer can achieve the maximum efficiency by setting the light emitting position of the light emitting layer of the present invention to correspond to the light emitting region. The EPEL structure of the present invention is characterized in that the number of the first organic layers, the thickness of the first organic layers, the number of the second organic layers, the thickness of the second organic layers, the number of the third organic layers, The thickness of the fourth organic layer, the thickness of the fourth organic layer, the number of the first light emitting layer, the thickness of the first light emitting layer, the number of the second light emitting layer, the thickness of the second light emitting layer, The first light emitting layer, the second light emitting layer, and the third light emitting layer have a maximum light emitting range regardless of the thickness of the third light emitting layer, so that the light emitting layer can achieve the maximum efficiency.

32 is a diagram showing an EL spectrum according to a ninth embodiment of the present invention.

In FIG. 32, the abscissa represents the wavelength region of light, and the ordinate represents the intensity of light. The emission intensity is a relative value based on the maximum value of the EL spectrum.

In FIG. 32, the embodiment (minimum position) is a portion set to the minimum position when the light emitting positions of the light emitting layers are set. For example, when the emission position L3 of the third emission layer (EML) 334 is in the range of 2,050 to 2,750 angstroms from the second electrode 304, the minimum position is set to 2,050 angstroms.

The embodiment (maximum position) is a portion set to the maximum position when the light emitting positions of the light emitting layers are set. For example, when the emission position L3 of the third emission layer (EML) 334 is in the range of 2,050 to 2,750 ANGSTROM from the second electrode 304, the maximum position is set to 2,750 ANGSTROM.

The embodiment (optimum position) is a portion set to the light emitting position of the eighth embodiment of the present invention. For example, when the emission position L3 of the third emission layer (EML) 334 is in the range of 2,050 to 2,750 angstroms from the second electrode 304, the emission position of the embodiment is 2,050 to 2,750 angstroms Range.

As shown in FIG. 32, when the minimum position of the emission position is deviated from the optimum position in the EPEL (Emission Position of Emitting Layers) structure of the present invention, it is as follows. It can be seen that the luminescence intensity decreases at 440 nm to 480 nm, which is the peak wavelength range of blue light, and is out of the peak wavelength range of blue light. It can be seen that the luminescence intensity is significantly reduced at 510 nm to 580 nm, which is the peak wavelength range of yellow-green light.

In the EPEL (Emission Position of Emitting Layers) structure of the present invention, when the maximum position of the emission position is deviated, the optimum position is as follows. The emission intensity decreases at 440 nm to 480 nm, which is the peak wavelength range of blue light. It can be seen that the luminescence intensity is significantly reduced at 510 nm to 580 nm, which is the peak wavelength range of yellow-green light. It can be seen that the luminescence intensity is remarkably decreased at 600 nm to 650 nm, which is the peak wavelength range of red light.

Accordingly, it can be seen that the emission intensity increases in the peak wavelength range of blue light when the optimum position of the present invention is set, compared with the case where the minimum or maximum position of the embodiment is set. Further, it can be seen that the emission intensity increases in the peak wavelength range of yellow-green light when the optimum position of the present invention is set to the minimum position or the maximum position of the embodiment. It can be seen that the emission intensity is increased in the peak wavelength range of red light when it is set to the optimum position of the present invention.

Table 17 shows the panel efficiency of the white organic light emitting device using the EPEL (Emission Position of Emitting Layers) structure of the present invention and the comparative example. And the efficiency of the comparative example is 100%, the efficiency of the ninth embodiment of the present invention is shown.

Table 17 below compares the efficiency of the comparative example and the embodiment of the present invention. The comparative example is a Bottom Emission type white organic light emitting device including a first light emitting portion, a second light emitting portion and a third light emitting portion. The first light emitting portion is a blue light emitting layer, the second light emitting portion is a yellow- Yellow-Green) light-emitting layer, and the third light-emitting portion is a blue light-emitting layer. The embodiment is a top emission type white organic light emitting device when an optimum position of an EPEL (Emission Position of Emitting Layers) structure of the present invention is applied.

As shown in Table 17, when the efficiency of the comparative example is 100%, the red efficiency is increased by about 77% and the green efficiency is 64 %, Respectively. It can be seen that the blue efficiency increased by about 51% and the white efficiency increased by about 68%.

The panel efficiency of the white organic light emitting device to which the EPEL (Emission Position of Emitting Layers) structure of the present invention is applied and the comparative example are as shown in Table 16 below.

Table 18 below shows the efficiencies of the embodiment (minimum position) and the embodiment (maximum position) when the efficiency of the embodiment (optimum position) is taken as 100%.

The panel efficiency was measured when the driving current density was 10 mA / cm ² . When the panel efficiency of the embodiment is 100%, the panel efficiency of the embodiment (minimum position) and the embodiment (maximum position) are measured.

As shown in Table 18, the efficiency of red, green, blue, and white is reduced at the boundary between the embodiment (minimum position) and the embodiment (maximum position) . It can be seen that the efficiencies of Red, Green, Blue, and White are further reduced in the embodiment (maximum position) than in the embodiment (minimum position).

Therefore, it can be seen that the panel efficiency decreases when the optimal position of the emission position of the EPEL structure of the present invention is deviated.

As described in the eighth embodiment of the present invention, the organic light emitting device may be an organic light emitting device of the top emission type.

The second light emitting layer and the third light emitting layer may include a light emitting layer emitting the same color.

The position of the first electrode may be set in a range of 4,700 A to 5,400 A from the second electrode.

The light emitting position of the third light emitting layer can be set in the range of 2,050 Å to 2,750 Å from the second electrode.

The light emitting position of the second light emitting layer can be set in the range of 3,350 Å to 3,950 Å from the second electrode.

The light emitting position of the first light emitting layer may be set in the range of 4,450 Å to 4,950 Å from the second electrode.

The first light emitting layer may include a yellow-green light emitting layer, or a yellow light emitting layer and a red light emitting layer, or a red light emitting layer and a green light emitting layer, or a yellow-green light emitting layer and a red light emitting layer, or a combination thereof.

The second light emitting layer and the third light emitting layer may be composed of a blue light emitting layer, a blue light emitting layer and a yellow-green light emitting layer, or a blue light emitting layer and a red light emitting layer, or a blue light emitting layer and a green light emitting layer, or a combination thereof.

The light emitting region of the first light emitting layer may range from 510 nm to 650 nm, the light emitting region of the second light emitting layer may range from 440 nm to 650 nm, and the light emitting region of the third light emitting layer may range from 440 nm to 650 nm.

Wherein the maximum emission range of the first emission layer is in the range of 530 nm to 570 nm, the maximum emission range of the second emission layer is in the range of 440 nm to 470 nm, and the maximum emission range of the third emission layer is in the range of 440 nm to 470 nm .

As described above, it can be seen that the emission intensity of the light emitting layer can be increased when the EPEL (Emission Position of Emitting Layers) structure of the present invention is applied. Further, it can be seen that the panel efficiency is improved because the emission intensity is increased.

FIG. 33 is a cross-sectional view of an organic light emitting display device including an organic light emitting device according to an embodiment of the present invention, which is an organic light emitting device according to the seventh, eighth, and ninth embodiments of the present invention, . In describing the present embodiment, description of the same or corresponding elements to those of the previous embodiment will be omitted.

33, the organic light emitting diode display 3000 of the present invention includes a substrate 30, a thin film transistor (TFT), a first electrode 302, a light emitting portion 3180, and a second electrode 304 . The thin film transistor TFT includes a gate electrode 3115, a gate insulating layer 3120, a semiconductor layer 3131, a source electrode 3133, and a drain electrode 3135.

Though the thin film transistor (TFT) is shown as an inverted staggered structure in FIG. 33, it may be formed in a coplanar structure.

The substrate 30 may be made of glass, metal, or plastic.

A gate electrode 3115 is formed on the substrate 30.

A gate insulating layer 3120 is formed on the gate electrode 3115.

A semiconductor layer 3131 is formed on the gate insulating layer 3120.

The source electrode 3133 and the drain electrode 3135 may be formed on the semiconductor layer 3131. [

A protective layer 3140 is formed on the source electrode 3133 and the drain electrode 3135.

A first electrode 302 is formed on the protective layer 3140.

A reflective electrode may be further formed under the first electrode 302 to reflect light toward the second electrode 304. An auxiliary electrode may be further formed on the first electrode 302.

The first electrode 302 is electrically connected to the drain electrode 3135 through a contact hole CH of a predetermined region of the protective layer 3140.

A bank layer 3170 is formed on the first electrode 302 and defines a pixel region.

A light emitting portion 3180 is formed on the bank layer 3170. The light emitting unit 3180 includes a first light emitting unit, a second light emitting unit, and a second light emitting unit formed on the first electrode 302, as shown in the seventh, eighth, and ninth embodiments of the present invention, 3 light emitting portions.

The second electrode 304 is formed on the light emitting portion 3180.

An encapsulation layer 3190 is formed on the second electrode 304. The sealing substrate 3301 may be bonded to the first substrate 30 by an encapsulating layer 3190. The sealing substrate 3301 may be made of glass, plastic, or metal. A color filter 3302 and a black matrix 3303 are disposed on the sealing substrate 3301. The light emitted from the light emitting portion 3180 travels toward the sealing substrate 3301 to display an image through the color filter 3302. [

The inventors of the present invention have invented a white organic light emitting device having a bottom emission structure with improved luminous efficiency and panel efficiency of a light emitting layer and improved brightness. The inventors of the present invention invented a white organic light emitting device capable of further improving the blue efficiency by arranging the light emitting layers including the light emitting layers emitting the same color adjacent to each other.

34 is a schematic view showing a white organic light emitting device according to a tenth embodiment of the present invention.

The white organic light emitting device 400 shown in FIG. 34 includes first and second electrodes 402 and 404, a first light emitting portion 410 and a second light emitting portion 450 disposed between the first and second electrodes 402 and 404 420 and a third light emitting unit 430.

The first electrode 402 is a positive electrode for supplying holes. The second electrode 404 is a cathode for supplying electrons. The first electrode 402 and the second electrode 404 may be referred to as an anode or a cathode, respectively. The first electrode may be a transmissive electrode, and the second electrode may be a reflective electrode.

The present invention sets the position of the first electrode from the second electrode and sets the light emitting positions of the first light emitting layer, the second light emitting layer and the third light emitting layer to improve the light emitting efficiency and the panel efficiency. In other words, the first light emitting portion, the second light emitting portion, and the third light emitting portion are formed of EPEL (Emission Position of Emitting Layers) having a maximum light emitting range in the light emitting regions of the first light emitting layer, the second light emitting layer, Structure. The two light emitting layers of the first light emitting layer, the second light emitting layer and the third light emitting layer include a light emitting layer that emits light of the same color, thereby providing a white organic light emitting device capable of further improving the light emitting efficiency. The light emitting layer emitting the same color may be referred to as a light emitting layer containing at least one light emitting layer emitting the same color.

The position L0 of the first electrode 402 is set to be within a range of 3,500 to 4,500 angstroms from the second electrode 404. Alternatively, the position (L0) of the first electrode 402 is set to be within a range of 3,500 to 4,500 angles from the reflective surface of the second electrode 404. The emission peak of the light emitting layer constituting the first light emitting portion 410, the second light emitting portion 420 and the third light emitting portion 430 is located at a specific wavelength, The light emitting efficiency can be improved. The emission peak may be referred to as an emission peak of an organic layer constituting the light emitting units.

 The position L0 of the first electrode 402 is set from the second electrode 404 and the light emitting position L1 of the third light emitting portion 430 closest to the second electrode 404 Is set to be in the range of 250 ANGSTROM to 800 ANGSTROM. Alternatively, the light emitting position L1 of the third light emitting portion 430 is set to be within a range of 250 to 800 angstroms from the reflective surface of the second electrode 404. The third light emitting portion 430 may include a blue light emitting layer or a blue light emitting layer and a yellow light emitting layer or a blue light emitting layer and a red light emitting layer or a blue light emitting layer Blue ) And a green (Green) light emitting layer, or a combination thereof. The blue light emitting layer may include one of a blue light emitting layer, a deep blue light emitting layer, and a sky blue light emitting layer. Since the deep blue light emitting layer is located in a shorter wavelength region than the blue light emitting layer, the deep blue light emitting layer can be advantageous for improving the color reproduction rate and brightness.

The light emitting position L1 of the third light emitting portion 430 may be in a range of 250 to 800 ANGSTROM from the second electrode 404 regardless of at least one of the thickness of the light emitting layer, the number of light emitting layers, . Alternatively, the light emitting position L1 of the third light emitting portion 430 is set to be 250 to 800 Å from the reflective surface of the second electrode 404. Accordingly, the emission peak is located in the blue emission region, and the third emission section 430 emits light with a wavelength corresponding to the emission peak, thereby achieving the maximum luminance . The peak wavelength of the blue light emitting layer may range from 440 nm to 480 nm. In addition, the peak wavelength range of the blue light-emitting layer and the yellow-green light-emitting layer may be 440 nm to 580 nm. The peak wavelength range of the blue light emitting layer and the red light emitting layer may be in the range of 440 nm to 650 nm. The peak wavelength range of the blue light emitting layer and the green light emitting layer may be 440 nm to 560 nm. Here, the peak wavelength may be a light emitting region.

The light emitting position L2 of the second light emitting portion 420 is set to be within a range of 1,450 to 1,950 angstroms from the second electrode 404. Alternatively, the light emitting position L2 of the second light emitting portion 420 is set to be within a range of 1,450 to 1,950 angstroms from the reflective surface of the second electrode 404. The second light emitting portion 420 may include a blue light emitting layer or a blue light emitting layer and a yellow-green light emitting layer or a blue light emitting layer and a red light emitting layer or a blue light emitting layer Blue ) And a green (Green) light emitting layer, or a combination thereof. The blue light emitting layer may include one of a blue light emitting layer, a deep blue light emitting layer, and a sky blue light emitting layer. Since the deep blue light emitting layer is located in a shorter wavelength region than the blue light emitting layer, the deep blue light emitting layer can be advantageous for improving the color reproduction rate and brightness.

The light emitting position L2 of the second light emitting portion 420 may be from 1,450 to 1,950 nm from the second electrode 404 regardless of at least one of the thickness of the light emitting layer, the number of light emitting layers, the thickness of the organic layer, A ". Alternatively, the light emitting position L1 of the second light emitting portion 420 is set to be within a range of 1,450 to 1,950 angstroms from the reflective surface of the second electrode 404.

Accordingly, the emission peak is located in the blue emission region, and light of a wavelength corresponding to the emission peak is emitted, so that the second emission section 420 can emit the maximum luminance . The peak wavelength of the blue light emitting layer may range from 440 nm to 480 nm. In addition, the peak wavelength range of the blue light-emitting layer and the yellow-green light-emitting layer may be 440 nm to 580 nm. The peak wavelength range of the blue light emitting layer and the red light emitting layer may be in the range of 440 nm to 650 nm. The peak wavelength range of the blue light emitting layer and the green light emitting layer may be 440 nm to 560 nm. Here, the peak wavelength may be a light emitting region.

The light emitting position L3 of the first light emitting portion 410 is set to be 2,050 A to 2,600 A from the second electrode 404. Alternatively, the light emitting position L3 of the first light emitting portion 410 is set to be within a range of 2,050 A to 2,600 A from the reflective surface of the second electrode 404. The first light emitting portion 410 may include a yellow-green light emitting layer or a red light emitting layer and a green light emitting layer or a yellow light emitting layer and a red light emitting layer or a yellow- Yellow-Green) light-emitting layer, and a red (Red) light-emitting layer, or a combination thereof.

The light emitting position L3 of the first light emitting portion 420 may be from 2,050 Å to 2,600 Å from the second electrode 404 regardless of at least one of the thickness of the light emitting layer, the number of light emitting layers, A ". Alternatively, the light emitting position L3 of the first light emitting portion 420 is set to be within a range of 2,050 to 2,600 angles from the reflective surface of the second electrode 404.

Therefore, the emission peak is located in the yellow-green emission region, or the yellow and red emission regions, or the red and green emission regions, or the yellow-green and red emission regions, The first light emitting unit 110 can emit light with a wavelength corresponding to the emission wavelength of the first light emitting unit 110. [ The peak wavelength range of the yellow-green light emitting layer may range from 510 nm to 580 nm. The peak wavelength range of the yellow light-emitting layer and the red light-emitting layer may be from 540 nm to 650 nm. In addition, the peak wavelength range of the red light emitting layer and the green light emitting layer may be 510 nm to 650 nm. In addition, the peak wavelength range of the yellow-green light-emitting layer and the red light-emitting layer may be 510 nm to 650 nm. Here, the peak wavelength may be a light emitting region.

The present invention sets the position of the first electrode 402 from the second electrode 404 regardless of at least one of the thickness of the light emitting layer, the number of the light emitting layers, the thickness of the organic layer, and the number of the organic layers, And an emission position of an emission structure (EPEL) in which the light emitting positions of the light emitting layers are set from the electrode 404. The first light emitting portion, the second light emitting portion, and the third light emitting portion have an EPEL (Emission Position of Emitting Layers) structure having a maximum emission range in the emission regions of the first, second and third emission layers will be.

35 is a view illustrating a white organic light emitting device according to a tenth embodiment of the present invention.

The white organic light emitting device 400 shown in FIG. 35 includes a first light emitting portion 410 and a second light emitting portion 420 between the first and second electrodes 402 and 404 and the first and second electrodes 402 and 404, And a third light emitting unit 430.

The first electrode 402 and the second electrode 404 may be referred to as an anode or a cathode, respectively.

The first electrode may be a transmissive electrode, and the second electrode may be a reflective electrode.

The position of the first electrode 402 is set to be within a range of 3,500 to 4,500 angstroms from the second electrode 404. The emission peak of the light emitting layers constituting the first light emitting portion 410, the second light emitting portion 420 and the third light emitting portion 430 is set by setting the position L0 of the first electrode 402, Can be positioned at a specific wavelength, and the efficiency of the light emitting layers can be improved by emitting light of the specific wavelength.

The third light emitting portion 430 includes a third electron transport layer (ETL) 436, a third emission layer (EML) 434, and a third hole transport layer (HTL) 432 under the second electrode 404 . Although not shown in the drawing, an electron injection layer (EIL) may be further formed on the third electron transport layer (ETL) 436.

A hole injection layer (HIL) may be further formed under the third hole transport layer (HTL) 432.

A hole blocking layer (HBL) may further be formed on the third emission layer (EML) 434. The third electron transport layer (ETL) 436 and the hole blocking layer HBL may be formed as one layer.

An electron blocking layer (EBL) may be further formed under the third emission layer (EML) 434. The third hole transport layer (HTL) 432 and the electron blocking layer (EBL) may be formed as one layer.

The third emission layer (EML) 434 is formed of a blue light emitting layer or a blue light emitting layer including an auxiliary light emitting layer capable of emitting different colors. The blue light emitting layer may include one of a blue light emitting layer, a deep blue light emitting layer, and a sky blue light emitting layer. Since the deep blue light emitting layer is located in a shorter wavelength region than the blue light emitting layer, the deep blue light emitting layer can be advantageous for improving the color reproduction rate and brightness.

The auxiliary light-emitting layer may be formed of one of a yellow-green light-emitting layer, a red light-emitting layer, and a green light-emitting layer, or a combination thereof. When the auxiliary light-emitting layer is further formed, the emission efficiency of the green light-emitting layer and the red light-emitting layer can be further improved. When forming the third light emitting layer (EML) 434 including the auxiliary light emitting layer, the yellow-green light emitting layer, the red light emitting layer, or the green light emitting layer is formed in the third light emitting layer (EML) It is also possible to arrange it on or below the upper portion 434. Further, a yellow-green or red light-emitting layer or a green light-emitting layer may be formed on the lower and upper portions of the third light-emitting layer (EML) 134 as the auxiliary light- have. The position and the number of the light emitting layer can be selectively arranged depending on the configuration and characteristics of the device, and the present invention is not limited thereto.

When the auxiliary light emitting layer is formed on the third light emitting layer (EML) 434, the peak wavelength of the light emitting region of the third light emitting layer (EML) 434 may be in the range of 440 nm to 650 nm. have. Here, the peak wavelength may be a light emitting region.

All layers such as the third electron transport layer (ETL) 436, the third emission layer (EML) 434, the electron injection layer (EIL), and the hole blocking layer (HBL) may be referred to as an organic layer. All organic layers located between the second electrode 404 and the third emission layer (EML) 434 and the third emission layer (EML) 434 may be referred to as an organic layer. Therefore, all organic layers located between the second electrode 404 and the third emission layer (EML) 434 may be referred to as a fourth organic layer.

Regardless of the number or thickness of the third electron transport layer (ETL) 436 or the number or thickness of the third emission layer (EML) 434, or the number or thickness of the electron injection layer (EIL) Regardless of the number or thickness of the hole blocking layer HBL or the number or thickness of all the organic layers between the second electrode 404 and the third emission layer EML 434, EML) 434 is set to be within a range of 250 ANGSTROM to 800 ANGSTROM from the second electrode 404. Alternatively, the emission position L1 of the third emission layer (EML) 434 is set to be within a range of 250 ANGSTROM to 800 ANGSTROM from the reflective surface of the second electrode 404.

Accordingly, the light emitting position (L1) of the third light emitting layer (EML) 434 is set to be the same regardless of the number of the at least one fourth organic layer, the thickness of the fourth organic layer, the number of the third light emitting layer, May be set to be within a range of 250 ANGSTROM to 800 ANGSTROM from the second electrode (404). (EML) 434 of the third light emitting layer (EML) 434 regardless of the number of the at least one fourth organic layer, the thickness of the fourth organic layer, the number of the third light emitting layer, and the thickness of the third light emitting layer May be set to be within a range of 250 ANGSTROM to 800 ANGSTROM from the reflective surface of the second electrode 404.

The second light emitting unit 420 may include a second hole transport layer (HTL) 422, a second light emitting layer (EML) 424, and a second electron transport layer (ETL) 426.

A hole injection layer (HIL) may be further formed under the second hole transport layer (HTL) 4122.

A hole blocking layer (HBL) may further be formed on the second emission layer (EML) 424. The second electron transport layer (ETL) 126 and the hole blocking layer HBL may be formed as a single layer.

An electron blocking layer (EBL) may be further formed under the second emission layer (EML) 424. The second hole transport layer (HTL) 422 and the electron blocking layer (EBL) may be formed as a single layer.

The second light emitting layer (EML) 424 is composed of a blue light emitting layer or a blue light emitting layer including an auxiliary light emitting layer capable of emitting different colors. The blue light emitting layer may include one of a blue light emitting layer, a deep blue light emitting layer, and a sky blue light emitting layer. Since the deep blue light emitting layer is located in a shorter wavelength region than the blue light emitting layer, the deep blue light emitting layer can be advantageous for improving the color reproduction rate and brightness.

The auxiliary light-emitting layer may be formed of one of a yellow-green light-emitting layer, a red light-emitting layer, and a green light-emitting layer, or a combination thereof. When the auxiliary light-emitting layer is further formed, the emission efficiency of the green light-emitting layer and the red light-emitting layer can be further improved. When forming the second light emitting layer (EML) 424 including the auxiliary light emitting layer, the yellow-green light emitting layer or the red light emitting layer or the green light emitting layer is formed in the first light emitting layer (EML) 114 on the upper side or the lower side. A yellow-green light-emitting layer, a red light-emitting layer, or a green light-emitting layer may be formed on or above the second light-emitting layer (EML) 424 as the auxiliary light- . The position and the number of the light emitting layer can be selectively arranged depending on the configuration and characteristics of the device, and the present invention is not limited thereto.

When the auxiliary light emitting layer is formed in the second light emitting layer (EML) 424, the peak wavelength of the light emitting region of the second light emitting layer (EML) 424 may be in the range of 440 nm to 650 nm have. Here, the peak wavelength may be a light emitting region.

A second charge generating layer (CGL) 450 may be further formed between the second light emitting portion 420 and the third light emitting portion 430. The second charge generation layer (CGL) 450 may include an N-type charge generation layer (N-CGL) and a P-type charge generation layer (P-CGL).

(EML) 424, the second electron transport layer (ETL) 426, the second charge generation layer (CGL) 450, the third hole transport layer (HTL) 432, All layers such as a layer (HBL), an electron blocking layer (EBL), and a hole injection layer (HIL) can be referred to as an organic layer. All organic layers between the third emission layer (EML) 434 and the second emission layer (EML) 424 and the second emission layer (EML) 424 may be referred to as an organic layer. Accordingly, all the organic layers between the third emission layer (EML) 334 and the second emission layer (EML) 324 may be referred to as a third organic layer.

(CGL) 450, regardless of the number or thickness of the third hole transport layer (HTL) 432 or the number or thickness of the second electron transport layer (ETL) 426, Irrespective of the number and thickness of the hole injection layer (HIL), or regardless of the number or thickness of the hole blocking layer (HBL) or the number or thickness of the electron blocking layer (EBL) (EML) 424, regardless of the number or thickness of the third emission layer (EML) 434 or the number or thickness of the second emission layer (EML) 424, Irrespective of the number and thickness of all the organic layers between the second light emitting layer (EML) 424 and the third light emitting layer (EML) 434, The light emitting position L2 of the second light emitting layer 424 is set to be within a range of 1,450 to 1,950 ANGSTROM from the second electrode 404 can do. Alternatively, the emission position L2 of the second emission layer (EML) 424 may be set within a range of 1,450 to 1,950 ANGSTROM from the reflective surface of the second electrode 404.

Therefore, the number of the at least one fourth organic layer, the thickness of the fourth organic layer, the number of the third organic layers, the thickness of the third organic layer, the number of the third light emitting layers, the thickness of the third light emitting layer, The position L2 of the second light emitting layer (EML) 424 from the second electrode 404 can be set to be within a range of 1,450 ANGSTROM to 1,950 ANGSTROM regardless of the number of the light emitting layers and the thickness of the second light emitting layer . Or the number of the at least one fourth organic layer, the thickness of the fourth organic layer, the number of the third organic layers, the thickness of the third organic layer, the number of the third light emitting layers, the thickness of the third light emitting layer, (L2) of the second light emitting layer (EML) 424 from the reflective surface of the second electrode 404 is within a range of 1,450 to 1,950 ANGSTROM regardless of the number of the light emitting layers and the thickness of the second light emitting layer Can be set.

The first light emitting portion 410 includes a first hole transport layer (HTL) 412, a first light emitting layer (EML) 414, and a first electron transport layer (ETL) 416 on the first electrode 402 .

Although not shown in the drawing, a hole injection layer (HIL) may be further formed on the first electrode 402.

A hole blocking layer (HBL) may further be formed on the first emission layer (EML) 414. The first electron transport layer (ETL) 416 and the hole blocking layer HBL may be formed as a single layer.

An electron blocking layer (EBL) may be further formed under the first emission layer (EML) 414. The first hole transport layer (HTL) 412 and the electron blocking layer (EBL) may be formed as a single layer.

The first emission layer (EML) 414 is composed of a yellow-green emission layer. The peak wavelength of the light emitting region of the yellow-green light emitting layer may be in the range of 510 nm to 580 nm.

The first emission layer (EML) 414 may include a yellow-green emission layer or a yellow emission layer and a red emission layer or a red emission layer and a green emission layer, A yellow-green light-emitting layer and a red light-emitting layer, or a combination thereof. When a red light-emitting layer is further formed in the yellow-green light-emitting layer, the efficiency of the red light-emitting layer can be further improved. The red light-emitting layer may be formed above or below the yellow-green light-emitting layer. The yellow light-emitting layer and the red light-emitting layer, or the red light-emitting layer and the green light-emitting layer, or the yellow-green light-emitting layer and the red light- (EML) 414, as shown in FIG. The yellow light-emitting layer and the red light-emitting layer or the red light-emitting layer and the green light-emitting layer or the yellow-green light-emitting layer and the red light- EML) 414, or may be configured differently.

The peak wavelength of the light emitting region of the yellow light emitting layer may be in the range of 540 nm to 580 nm. The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. Therefore, the peak wavelength of the light emitting region of the yellow light emitting layer and the red light emitting layer of the first light emitting layer (EML) 414 may be in the range of 540 nm to 650 nm. Here, the peak wavelength may be a light emitting region. The light emitting efficiency of the red light emitting layer can be increased when the light emitting layer is composed of two layers of the yellow light emitting layer and the red light emitting layer.

The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. The peak wavelength of the luminescent region of the green light emitting layer may be in the range of 510 nm to 560 nm. Therefore, the peak wavelength of the emission regions of the red and green emission layers of the first emission layer (EML) 414 may be in the range of 510 nm to 650 nm. Here, the peak wavelength may be a light emitting region. When the red light emitting layer and the green light emitting layer are formed of two layers, the color reproducibility can be improved.

The peak wavelength of the light emitting region of the yellow light emitting layer may be in the range of 540 nm to 580 nm. The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. Therefore, the peak wavelength of the light emitting region of the yellow light emitting layer and the red light emitting layer of the first light emitting layer (EML) 414 may be in the range of 540 nm to 650 nm. Here, the peak wavelength may be a light emitting region. The light emitting efficiency of the red light emitting layer can be increased when the light emitting layer is composed of two layers of the yellow light emitting layer and the red light emitting layer.

In addition, the first emission layer (EML) 414 may include two layers of a red emission layer and a yellow-green emission layer, depending on the characteristics and structure of the device. The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. The peak wavelength of the light emitting region of the yellow-green light emitting layer may be in the range of 510 nm to 580 nm. When the red light-emitting layer and the yellow-green light-emitting layer are composed of two layers, the light-emitting efficiency of the red light-emitting layer can be increased. In this case, the peak wavelength of the emission region of the first emission layer (EML) 414 may be in the range of 510 nm to 650 nm. Here, the peak wavelength may be a light emitting region.

The first emission layer (EML) 414 may be a yellow-green emission layer or a yellow emission layer and a red emission layer or a red emission layer and a green emission layer, A peak wavelength of the luminescent region of the first emission layer (EML) 414 may be in the range of 510 nm to 650 nm, Nm. ≪ / RTI > Here, the peak wavelength may be a light emitting region.

A first charge generation layer (CGL) 440 may be further formed between the first light emitting portion 410 and the second light emitting portion 420. The first charge generation layer (CGL) 440 may include an N-type charge generation layer (N-CGL) and a P-type charge generation layer (P-CGL).

(EML) 414, the first electron transport layer (ETL) 416, the first charge generation layer (CGL) 440, the second hole transport layer 422, the HBL , An electron blocking layer (EBL), a hole injection layer (HIL), and the like can be referred to as an organic layer. All the organic layers between the first emission layer (EML) 414 and the second emission layer (EML) 424 and the first emission layer (EML) 414 may be referred to as an organic layer. Accordingly, all of the organic layers between the first emission layer (EML) 414 and the second emission layer (EML) 424 may be referred to as a second organic layer.

Regardless of the number or thickness of the first electron transport layer (ETL) 416,

Regardless of the number or thickness of the HTL 422 or the number or thickness of the first charge generating layer 440 or the number or thickness of the HBL, Regardless of the number or thickness of the electron blocking layer EBL or the number or thickness of the hole injection layer HIL or the number or thickness of the third light emitting layer (EML) 434, (EML) 424, regardless of the number or thickness of the second light emitting layer (EML) 424 or the number or thickness of the first light emitting layer (EML) 414, or between the second electrode 404 and the third light emitting layer Irrespective of the number and thickness of all the organic layers between the second light emitting layer (EML) 424 and the third light emitting layer (EML) 434, or the number or thickness of all the organic layers between the second light emitting layer (EML) 414, regardless of the number and thickness of all the organic layers between the light emitting layer (EML) 414 and the second light emitting layer (EML) 424, Light-emitting position (L3) is set so as to be positioned in the range of 2,050Å to 2,600Å from the second electrode 404. Alternatively, the emission position L3 of the first emission layer (EML) 414 is set to be within a range of 2,050 Å to 2,600 Å from the reflective surface of the second electrode 404.

Therefore, the number of the at least one fourth organic layer, the thickness of the fourth organic layer, the number of the third organic layers, the thickness of the third organic layer, the number of the second organic layers, the thickness of the second organic layer, Regardless of the number of the light emitting layers, the thickness of the third light emitting layer, the number of the second light emitting layers, the thickness of the second light emitting layer, the number of the first light emitting layers, and the thickness of the first light emitting layer, The position L3 of the first emission layer (EML) 414 may be set to be within a range of 2,050 Å to 2,600 Å. Or the number of the at least one fourth organic layer, the thickness of the fourth organic layer, the number of the third organic layers, the thickness of the third organic layer, the number of the second organic layers, the thickness of the second organic layer, Irrespective of the number of the light emitting layers, the thickness of the third light emitting layer, the number of the second light emitting layers, the thickness of the second light emitting layer, the number of the first light emitting layers, and the thickness of the first light emitting layer, The position L3 of the first emission layer (EML) 414 from the slope can be set to be within a range of 2,050 to 2,600 angstroms.

All layers such as the first hole transport layer (HTL) 412, the electron blocking layer (EBL), and the hole injection layer (HIL) may be referred to as an organic layer. All the organic layers between the substrate 401 and the first emission layer (EML) 414 and the first electrode 402 can be referred to as an organic layer. Accordingly, all of the organic layers between the substrate 301 and the first emission layer (EML) 414 may be referred to as a first organic layer.

Regardless of the number or thickness of the first hole transporting layer (HTL) 412 or the number or thickness of the first electrode 402 or the number or thickness of the electron blocking layer EBL, Regardless of the number or thickness of the layer (HIL) or regardless of the number or thickness of the third light emitting layer (EML) 434 or the number or thickness of the second light emitting layer (EML) 424, Irrespective of the number or thickness of the organic light emitting layer (EML) 414 or the number or thickness of all the organic layers between the second electrode 404 and the third light emitting layer (EML) 434, (EML) 414 and the second light emitting layer (EML) 434, regardless of the number or thickness of all the organic layers between the light emitting layer (EML) 424 and the third light emitting layer (EML) (EML) 414, regardless of the number or thickness of all the organic layers between the substrate 401 and the first light emitting layer Regardless of the thickness or the position (L0) of the first electrode 402 from the second electrode 404 may be set so as to be positioned in the range of 3,500Å to 4,500Å. Alternatively, the position (L0) of the first electrode 402 from the reflective surface of the second electrode 404 may be set to be within a range of 3,500 to 4,500 angstroms.

Therefore, the number of the at least one fourth organic layer, the thickness of the fourth organic layer, the number of the third organic layers, the thickness of the third organic layer, the number of the second organic layers, the thickness of the second organic layer, The number of the first light emitting layers, the number of the first light emitting layers, the number of the organic layers, the thickness of the first organic layer, the number of the third light emitting layers, the thickness of the third light emitting layer, The position L0 of the first electrode 402 from the second electrode 404 can be set within a range of from 3,500 to 4,500 angstroms regardless of the thickness of the first electrode 402. [ Or the number of the at least one fourth organic layer, the thickness of the fourth organic layer, the number of the third organic layers, the thickness of the third organic layer, the number of the second organic layers, the thickness of the second organic layer, The number of the first light emitting layers, the number of the first light emitting layers, the number of the organic layers, the thickness of the first organic layer, the number of the third light emitting layers, the thickness of the third light emitting layer, The position L0 of the first electrode 402 from the reflective surface of the second electrode 404 can be set to be within a range of from 3,500 to 4,500 angstroms regardless of the thickness of the second electrode 404.

The structure shown in FIG. 35 shows an example of the present invention. The structure shown in FIG. 35 can be selectively formed according to the structure and characteristics of the white organic light emitting device, but is not limited thereto.

FIG. 36 is a view illustrating a light emitting position of an organic light emitting diode according to a tenth embodiment of the present invention.

In FIG. 36, the abscissa represents the wavelength region of light, and the ordinate represents the emission position of the light emitting layers constituting the light emitting portion from the second electrode 404, which may be referred to as a contour map. Here, except for the first electrode 402 and the second electrode 404, the emission positions of the light emitting layers in the emission peak at the application of the EPEL structure of the present invention are shown. The light emitting regions of the light emitting layers have the maximum light emitting range.

Since the third emission layer (EML) 434 of the third emission layer 430 is a blue emission layer, the peak wavelength range of the emission region of the third emission layer (EML) May range from 440 nm to 480 nm. It is necessary to emit light at 440 nm to 480 nm which is a light emitting region of a blue light emitting layer, so that maximum efficiency can be obtained in a white region of a contour map.

Therefore, the light emitting position of the third light emitting layer (EML) 434 is set in the range of 250 to 800 Å, and the emission peak 434E of the third light emitting layer (EML) 434 is set to 440 nm to 480 nm . As a result, the third light emitting layer (EML) 434 emits light at 440 nm to 480 nm, thereby achieving maximum efficiency.

The blue light emitting layer may include one of a blue light emitting layer, a deep blue light emitting layer, and a sky blue light emitting layer.

A yellow-green or red light-emitting layer or a green light-emitting layer may be formed as an auxiliary light-emitting layer in the third light-emitting layer (EML) 434 constituting the third light-emitting portion 430 , The peak wavelength range of the emission region of the third emission layer (EML) 434 may range from 440 nm to 650 nm. Therefore, in this case, it is necessary to emit light at 440 to 650 nm, which is a light emitting region of the third light emitting layer (EML) 434, so that maximum efficiency can be obtained in the white region of the contour map.

In FIG. 36, the third light emitting layer (EML) 434 does not include an auxiliary light emitting layer, and the third light emitting layer (EML) 434 shows a light emitting position using a blue light emitting layer as an example. Therefore, the peak wavelength range of the emission region of the third emission layer (EML) 434 can reach the maximum efficiency in the range of 440 nm to 480 nm.

The second light emitting layer (EML) 424 constituting the second light emitting portion 420 is a blue light emitting layer. Therefore, the peak wavelength range of the light emitting region of the second light emitting layer (EML) 424 May range from 440 nm to 480 nm. It is necessary to emit light at 440 nm to 480 nm which is a light emitting region of a blue light emitting layer, so that maximum efficiency can be obtained in a white region of a contour map.

Accordingly, the emission position of the second emission layer (EML) 424 is set in the range of 1,450 ANGSTROM to 1,950 ANGSTROM so that the emission peak 424E of the second emission layer (EML) 424 is in the range of 440 nm to 480 Nm. Therefore, the second light emitting layer (EML) 44 emits light at 440 nm to 480 nm, thereby achieving maximum efficiency.

The blue light emitting layer may include one of a blue light emitting layer, a deep blue light emitting layer, and a sky blue light emitting layer.

A yellow-green or red light-emitting layer or a green light-emitting layer is formed as an auxiliary light-emitting layer in the second light-emitting layer (EML) 424 constituting the second light-emitting portion 420 , The peak wavelength range of the emission region of the second emission layer (EML) 424 may range from 440 nm to 650 nm. Therefore, in this case, it is necessary to emit light at 440 to 650 nm, which is the light emitting region of the second light emitting layer (EML) 424, so that maximum efficiency can be obtained in the white region of the contour map.

36 does not include an auxiliary light emitting layer in the second light emitting layer (EML) 424, and the second light emitting layer (EML) 424 shows a light emitting position using a blue light emitting layer as an example. Therefore, the peak wavelength range of the emission region of the second emission layer (EML) 424 can exhibit the maximum efficiency in the range of 440 nm to 480 nm.

Since the first emission layer (EML) 414 constituting the first emission layer 410 is a yellow-green emission layer, the peak emission wavelength of the emission region of the first emission layer (EML) 414 peak wavelength range may range from 510 nm to 580 nm. It is necessary to emit light at 510 nm to 580 nm which is a light emitting region of a yellow-green light emitting layer, thereby achieving maximum efficiency in a white region of a contour map.

Therefore, the emission position of the first emission layer (EML) 414 is set in the range of 2,050 Å to 2,600 Å, and the emission peak 414E is positioned at 510 nm to 580 nm. As a result, light can be emitted from the first emission layer (EML) 414 at 510 nm to 580 nm, thereby achieving maximum efficiency.

The first light emitting layer (EML) 414 of the first light emitting portion 410 may be formed of two layers, a red light emitting layer and a green light emitting layer, depending on the characteristics and structure of the device. The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. The peak wavelength of the luminescent region of the green light emitting layer may be in the range of 510 nm to 560 nm. Therefore, in this case, it is required to emit light at 510 nm to 650 nm which is the light emitting region of the first light emitting layer (EML) 414, so that the maximum efficiency can be obtained in the white region of the contour map.

The first light emitting layer (EML) 414 of the first light emitting portion 410 is composed of two layers of a red light emitting layer and a yellow-green light emitting layer according to the characteristics and structure of the device. can do. The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. The peak wavelength of the light emitting region of the yellow-green light emitting layer may be in the range of 510 nm to 580 nm. Therefore, in this case, it is required to emit light at 510 nm to 650 nm which is the light emitting region of the first light emitting layer (EML) 414, so that the maximum efficiency can be obtained in the white region of the contour map.

The first light emitting layer (EML) 414 of the first light emitting portion 410 may include two layers of a yellow light emitting layer and a red light emitting layer depending on the characteristics and structure of the device. The peak wavelength of the light emitting region of the yellow light emitting layer may be in the range of 540 nm to 580 nm. The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. Therefore, in this case, it is necessary to emit light at 540 nm to 650 nm, which is the light emitting region of the first light emitting layer (EML) 414, so that maximum efficiency can be obtained in the white region of the contour map.

Accordingly, a yellow-green light-emitting layer, a yellow light-emitting layer, a red light-emitting layer, a red light-emitting layer, and a green light-emitting layer may be used as the first light- A peak wavelength range of the luminescent region of the first emission layer (EML) 314 is 510 (nm), and a peak wavelength of the luminescent region of the first emission layer (EML) Nm to 650 nm. In this case, it is necessary to emit light at 510 nm to 650 nm which is a light emitting region of the first light emitting layer (EML) 414, so that maximum efficiency can be obtained in the white region of the contour map.

36 does not include an auxiliary light emitting layer in the first light emitting layer (EML) 414, and the first light emitting layer (EML) 414 shows a light emitting position using a yellow-green light emitting layer as an example. Therefore, the peak wavelength range of the emission region of the second emission layer (EML) 414 can exhibit the maximum efficiency in the range of 510 nm to 580 nm.

As described above, the position of the emission peak changes according to the emission position of the emission layer. The present invention applies an emission position of emission (EPEL) structure in which the emission peak of the emission layer is positioned in a desired emission region by setting the emission position of the emission layer constituting the emission portion.

Accordingly, the emission peak is positioned at a specific wavelength by applying the emission position of the emission layer (EPEL) structure to the emission layer, so that the emission layers can maximize efficiency in the light corresponding to a specific wavelength.

A maximum emission range of the light emitting layers in the emission region having the specific wavelength can be referred to as a maximum emission range. The maximum emission range of the first emission layer is 530 nm to 570 nm, the maximum emission range of the second emission layer is 440 nm to 470 nm, and the maximum emission range of the third emission layer is 440 nm to 470 nm.

That is, in order to emit light at 440 nm to 470 nm, which is the maximum emission range of the blue emission layer, and 530 nm to 570 nm, which is the maximum emission range of the yellow-green emission layer, The maximum efficiency can be achieved in the white area. It can be seen that the light emitting layer can achieve the maximum efficiency by setting the light emitting position of the light emitting layer of the present invention to correspond to the light emitting region. The EPEL structure of the present invention is characterized in that the number of the first organic layers, the thickness of the first organic layers, the number of the second organic layers, the thickness of the second organic layers, the number of the third organic layers, The thickness of the fourth organic layer, the thickness of the fourth organic layer, the number of the first light emitting layer, the thickness of the first light emitting layer, the number of the second light emitting layer, the thickness of the second light emitting layer, The first light emitting layer, the second light emitting layer, and the third light emitting layer have a maximum light emitting range regardless of the thickness of the third light emitting layer, so that the light emitting layer can achieve the maximum efficiency.

37 is a diagram showing an EL spectrum according to a tenth embodiment of the present invention.

37, the horizontal axis represents the wavelength region of light, and the vertical axis represents the intensity of light. The emission intensity is a relative value based on the maximum value of the EL spectrum.

In FIG. 37, the embodiment (minimum position) is a portion set to the minimum position when the light emitting positions of the light emitting layers are set. For example, when the emission position L1 of the third emission layer (EML) 434 is in the range of 250 ANGSTROM to 800 ANGSTROM from the second electrode 404, the minimum position is set to 250 ANGSTROM.

The embodiment (maximum position) is a portion set to the maximum position when the light emitting positions of the light emitting layers are set. For example, when the emission position L1 of the third emission layer (EML) 434 is in the range of 250 ANGSTROM to 800 ANGSTROM from the second electrode 404, the maximum position is set to 800 ANGSTROM.

The embodiment (optimum position) is a portion set to the light emitting position of the eighth embodiment of the present invention. For example, when the emission position L1 of the third emission layer (EML) 434 is in the range of 250 ANGSTROM to 800 ANGSTROM from the second electrode 404, the emission position of the embodiment is set in the range of 250 ANGSTROM to 800 ANGSTROM .

As shown in FIG. 37, when the minimum position of the emission position is deviated from the optimum position in the EPEL (Emission Position of Emitting Layers) structure of the present invention, it is as follows. The emission intensity decreases at 440 nm to 480 nm, which is the peak wavelength range of blue light. It can be seen that the luminescence intensity decreases in the range of 510 nm to 580 nm, which is the peak wavelength range of the yellow-green light. It can be seen that the luminescence intensity is remarkably decreased at 600 nm to 650 nm, which is the peak wavelength range of red light.

In the EPEL (Emission Position of Emitting Layers) structure of the present invention, when the maximum position of the emission position is deviated, the optimum position is as follows. The emission intensity decreases at 440 nm to 480 nm, which is the peak wavelength range of blue light. It can be seen that the luminescence intensity is significantly reduced at 510 nm to 580 nm, which is the peak wavelength range of yellow-green light.

Accordingly, it can be seen that the emission intensity increases in the peak wavelength range of blue light when the optimum position of the present invention is set, compared with the case where the minimum or maximum position of the embodiment is set. Further, it can be seen that the emission intensity increases in the peak wavelength range of yellow-green light when the optimum position of the present invention is set to the minimum position or the maximum position of the embodiment. It can be seen that the emission intensity is increased in the peak wavelength range of red light when it is set to the optimum position of the present invention.

The panel efficiency of the white organic light emitting device to which the EPEL (Emission Position of Emitting Layers) structure of the present invention is applied and the comparative example are as shown in Table 19 below. And the efficiency of the comparative example is 100%, the efficiency of the tenth embodiment of the present invention is shown.

Table 19 below compares the efficiency of the comparative example and the embodiment of the present invention. The comparative example is a Bottom Emission type white organic light emitting device including a first light emitting portion, a second light emitting portion and a third light emitting portion. The first light emitting portion is a blue light emitting layer, the second light emitting portion is a yellow- Yellow-Green) light-emitting layer, and the third light-emitting portion is a blue light-emitting layer. The embodiment is a top emission type white organic light emitting device when an optimum position of an EPEL (Emission Position of Emitting Layers) structure of the present invention is applied.

As shown in Table 19, when the efficiency of the comparative example was 100% when the EPEL structure of the present invention was applied as compared with the comparative example, the red efficiency was increased by about 22%, and green, Blue) and white (White) efficiency are almost similar to the comparative example.

The panel efficiency of the white organic light emitting device using the EPEL (Emission Position of Emitting Layers) structure of the present invention and the comparative example are as shown in Table 20 below.

Table 20 below shows the efficiencies of the embodiment (minimum position) and the embodiment (maximum position) when the efficiency of the embodiment (optimum position) is taken as 100%.

The panel efficiency was measured when the driving current density was 10 mA / cm ² . When the panel efficiency of the embodiment is 100%, the panel efficiency of the embodiment (minimum position) and the embodiment (maximum position) are measured.

As shown in Table 20, the efficiency of red, green, blue, and white is reduced at the boundary between the embodiment (minimum position) and the embodiment (maximum position) . It can be seen that the efficiencies of red, green, blue, and white are further reduced in the embodiment (minimum position) than in the embodiment (maximum position).

Therefore, it can be seen that the panel efficiency decreases when the optimal position of the emission position of the EPEL structure of the present invention is deviated.

As described in the tenth embodiment of the present invention, the organic light emitting device may be an organic light emitting device of a bottom emission type.

The second light emitting layer and the third light emitting layer may include a light emitting layer emitting the same color.

The position of the first electrode may be set in the range of 3,500 to 4,500 angstroms from the second electrode.

The light emitting position of the third light emitting layer can be set in the range of 250 Å to 800 Å from the second electrode.

The light emitting position of the second light emitting layer can be set in the range of 1,450 Å to 1,950 Å from the second electrode.

The light emitting position of the first light emitting layer can be set in the range of 2,050 Å to 2,600 Å from the second electrode.

The first light emitting layer may include a yellow-green light emitting layer, or a yellow light emitting layer and a red light emitting layer, or a red light emitting layer and a green light emitting layer, or a yellow-green light emitting layer and a red light emitting layer, or a combination thereof.

The second light emitting layer and the third light emitting layer may be composed of a blue light emitting layer, a blue light emitting layer and a yellow-green light emitting layer, or a blue light emitting layer and a red light emitting layer, or a blue light emitting layer and a green light emitting layer, or a combination thereof.

The light emitting region of the first light emitting layer may range from 510 nm to 650 nm, the light emitting region of the second light emitting layer may range from 440 nm to 650 nm, and the light emitting region of the third light emitting layer may range from 440 nm to 650 nm.

Wherein the maximum emission range of the first emission layer is in the range of 530 nm to 570 nm, the maximum emission range of the second emission layer is in the range of 440 nm to 470 nm, and the maximum emission range of the third emission layer is in the range of 440 nm to 470 nm .

As described above, it can be seen that the emission intensity of the light emitting layer can be increased when the EPEL (Emission Position of Emitting Layers) structure of the present invention is applied. Further, it can be seen that the panel efficiency is improved because the emission intensity is increased.

38 is a view illustrating a white organic light emitting device according to an eleventh embodiment of the present invention.

The white organic light emitting device 400 shown in FIG. 38 includes a first light emitting portion 410 and a second light emitting portion 420 between the first and second electrodes 402 and 404 and the first and second electrodes 402 and 404, And a third light emitting unit 430. In describing the present embodiment, description of the same or corresponding elements to those of the previous embodiment will be omitted. In this embodiment, the light emitting position of the light emitting layers is set from the first electrode, and the light emitting position can be set from the first electrode according to the device design.

The position of the second electrode 404 is set to be within a range of 3,500 to 4,500 angstroms from the first electrode 402. The emission peak of the light emitting layers constituting the first light emitting portion 410, the second light emitting portion 420 and the third light emitting portion 430 is set by setting the position L0 of the second electrode 404, Can be positioned at a specific wavelength, and the efficiency of the light emitting layers can be improved by emitting light of the specific wavelength. The first light emitting portion, the second light emitting portion, and the third light emitting portion may include an Emission Position of Emitting Layers (EPEL) having a maximum light emitting range in the light emitting regions of the first light emitting layer, the second light emitting layer, Structure. The two light emitting layers of the first light emitting layer, the second light emitting layer and the third light emitting layer include a light emitting layer that emits light of the same color, thereby providing a white organic light emitting device capable of further improving the light emitting efficiency. The light emitting layer emitting the same color may be referred to as a light emitting layer containing at least one light emitting layer emitting the same color.

The first light emitting portion 410 includes a first hole transport layer (HTL) 412, a first light emitting layer (EML) 414, and a first electron transport layer (ETL) 416 on the first electrode 402 .

Although not shown in the drawing, a hole injection layer (HIL) may be further formed on the first electrode 402.

A hole blocking layer (HBL) may further be formed on the first emission layer (EML) 414. The first electron transport layer (ETL) 416 and the hole blocking layer HBL may be formed as one layer.

An electron blocking layer (EBL) may be further formed under the first emission layer (EML) 414. The first hole transport layer (HTL) 412 and the electron blocking layer (EBL) may be formed as a single layer.

The first emission layer (EML) 414 is composed of a yellow-green emission layer. The peak wavelength of the light emitting region of the yellow-green light emitting layer may be in the range of 510 nm to 580 nm.

The first emission layer (EML) 414 may include a yellow-green emission layer or a yellow emission layer and a red emission layer or a red emission layer and a green emission layer, A yellow-green light-emitting layer and a red light-emitting layer, or a combination thereof. When a red light-emitting layer is further formed in the yellow-green light-emitting layer, the efficiency of the red light-emitting layer can be further improved. The red light-emitting layer may be formed above or below the yellow-green light-emitting layer.

The yellow light-emitting layer and the red light-emitting layer, or the red light-emitting layer and the green light-emitting layer, or the yellow-green light-emitting layer and the red light- (EML) 414, as shown in FIG. The yellow light-emitting layer and the red light-emitting layer or the red light-emitting layer and the green light-emitting layer or the yellow-green light-emitting layer and the red light- EML) 414, or may be configured differently.

The peak wavelength of the light emitting region of the yellow light emitting layer may be in the range of 540 nm to 580 nm. The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. Therefore, the peak wavelength of the light emitting region of the yellow light emitting layer and the red light emitting layer of the first light emitting layer (EML) 414 may be in the range of 540 nm to 650 nm. Here, the peak wavelength may be a light emitting region. The light emitting efficiency of the red light emitting layer can be increased when the light emitting layer is composed of two layers of the yellow light emitting layer and the red light emitting layer.

The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. The peak wavelength of the luminescent region of the green light emitting layer may be in the range of 510 nm to 560 nm. Therefore, the peak wavelength of the emission regions of the red and green emission layers of the first emission layer (EML) 414 may be in the range of 510 nm to 650 nm. Here, the peak wavelength may be a light emitting region. When the red light emitting layer and the green light emitting layer are formed of two layers, the color reproducibility can be improved.

The peak wavelength of the light emitting region of the yellow light emitting layer may be in the range of 540 nm to 580 nm. The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. Therefore, the peak wavelength of the light emitting region of the yellow light emitting layer and the red light emitting layer of the first light emitting layer (EML) 414 may be in the range of 540 nm to 650 nm. Here, the peak wavelength may be a light emitting region. The light emitting efficiency of the red light emitting layer can be increased when the light emitting layer is composed of two layers of the yellow light emitting layer and the red light emitting layer.

In addition, the first emission layer (EML) 414 may include two layers of a red emission layer and a yellow-green emission layer, depending on the characteristics and structure of the device. The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. The peak wavelength of the light emitting region of the yellow-green light emitting layer may be in the range of 510 nm to 580 nm. When the red light-emitting layer and the yellow-green light-emitting layer are composed of two layers, the light-emitting efficiency of the red light-emitting layer can be increased. In this case, the peak wavelength of the emission region of the first emission layer (EML) 414 may be in the range of 510 nm to 650 nm. Here, the peak wavelength may be a light emitting region.

The first emission layer (EML) 414 may be a yellow-green emission layer or a yellow emission layer and a red emission layer or a red emission layer and a green emission layer, A peak wavelength of the luminescent region of the second emission layer (EML) 124 is 510 nm to 650 nm, and the emission wavelength of the second emission layer (EML) Nm. ≪ / RTI > Here, the peak wavelength may be a light emitting region.

All layers such as the first hole transport layer (HTL) 412, the electron blocking layer (EBL), and the hole injection layer (HIL) may be referred to as an organic layer. All the organic layers between the substrate 401 and the first emission layer (EML) 414 and the first electrode 402 can be referred to as an organic layer. Accordingly, all of the organic layers between the substrate 401 and the first emission layer (EML) 414 may be referred to as a first organic layer.

Regardless of the number or thickness of the first hole transporting layer (HTL) 412 or the number or thickness of the first electrode 402 or the number or thickness of the electron blocking layer EBL, Regardless of the number and thickness of the first light emitting layer (EML) 414, regardless of the number and thickness of all the organic layers between the substrate 401 and the first light emitting layer (EML) 414, The light emitting position L1 is set to be within a range of 1,500 to 2,050 angstroms from the first electrode 402. Alternatively, the emission position L1 of the first emission layer (EML) 414 is set to be within a range of 1,500 to 2,050 angstroms from the interface between the substrate 401 and the first electrode 402. Accordingly, the position L1 of the first light emitting layer (EML) 414 from the first electrode 402 is in the range of 1,500 to 2,050 Å, regardless of the number of the at least one first organic layer and the thickness of the first organic layer. As shown in Fig. Alternatively, the light emitting position (L1) of the first light emitting layer (EML) 414 may correspond to the light emitting position (L1) of the substrate 401 and the first electrode (402), regardless of the number of the at least one first organic layer and the thickness of the first organic layer ) Within the range of 1,500 to 2,050 angstroms.

The second light emitting unit 420 may include a second hole transport layer (HTL) 422, a second light emitting layer (EML) 424, and a second electron transport layer (ETL) 426. A hole injection layer (HIL) may be further formed under the second hole transport layer (HTL) 422. A hole blocking layer (HBL) may further be formed on the second emission layer (EML) 424. An electron blocking layer (EBL) may be further formed under the second emission layer (EML) 424.

The second light emitting layer (EML) 424 is composed of a blue light emitting layer or a blue light emitting layer including an auxiliary light emitting layer capable of emitting different colors. The blue light emitting layer may include one of a blue light emitting layer, a deep blue light emitting layer, and a sky blue light emitting layer.

The auxiliary light-emitting layer may be formed of one of a yellow-green light-emitting layer or a red light-emitting layer, or a combination thereof. When the auxiliary light-emitting layer is further formed, the emission efficiency of the green light-emitting layer and the red light-emitting layer can be further improved. When forming the second light emitting layer (EML) 424 including the auxiliary light emitting layer, the yellow-green light emitting layer or the red light emitting layer or the green light emitting layer is formed as the second light emitting layer (EML) 424, respectively. A yellow-green light-emitting layer, a red light-emitting layer, or a green light-emitting layer may be formed on or above the second light-emitting layer (EML) 424 as the auxiliary light- . The position and the number of the light emitting layer can be selectively arranged depending on the configuration and characteristics of the device, and the present invention is not limited thereto.

When the auxiliary light emitting layer is formed in the second light emitting layer (EML) 424, the peak wavelength of the light emitting region of the first light emitting layer (EML) 424 may be in the range of 440 nm to 650 nm have. Here, the peak wavelength may be a light emitting region.

A first charge generation layer (CGL) 440 may be further formed between the first light emitting portion 410 and the second light emitting portion 420. The first charge generating layer 140 may include an N-type charge generating layer and a P-type charge generating layer.

(EML) 414, the first electron transport layer (ETL) 416, the first charge generation layer (CGL) 440, the second hole transport layer (HTL) 422, All layers such as a layer (HBL), an electron blocking layer (EBL), and a hole injection layer (HIL) can be referred to as an organic layer. All the organic layers between the first emission layer (EML) 414 and the second emission layer (EML) 424 and the first emission layer (EML) 414 may be referred to as an organic layer. Accordingly, all of the organic layers between the first emission layer (EML) 414 and the second emission layer (EML) 424 may be referred to as a second organic layer.

(HTL) 422, regardless of the number or thickness of the first electron transport layer (ETL) 416 or the thickness of the first charge transport layer (HTL) 422, regardless of the number or thickness of the second hole transport layer Irrespective of the number and thickness of the hole injection layer (HIL) or regardless of the number or thickness of the hole blocking layer (HBL) or the number or thickness of the electron blocking layer (EBL) Regardless of the number or thickness of the first light emitting layer (EML) 414 or the number or thickness of all the organic layers between the substrate 401 and the first light emitting layer (EML) 414, The light emitting position L2 of the second light emitting layer (EML) 424 may be the same as the light emitting position L2 of the second light emitting layer (EML) 424 regardless of the number or thickness of all organic layers between the first light emitting layer (EML) 414 and the second light emitting layer To be within a range of 2,150 to 2,600 angstroms. Alternatively, the emission position L2 of the second emission layer (EML) 424 may be set within a range of 2,150 Å to 2,600 Å from the interface between the substrate 401 and the first electrode 402.

Therefore, the number of the first organic layers, the number of the first organic layers, the number of the second organic layers, the thickness of the second organic layers, the number of the first light emitting layers, and the thickness of the first light emitting layer, The emission position L2 of the second emission layer (EML) 424 may be set to be within a range of 2,150 Å to 2,600 Å from the first electrode 402. Or the thickness of the first organic layer, the thickness of the first organic layer, the thickness of the second organic layer, the number of the first light emitting layer, and the thickness of the first light emitting layer, The light emitting position L2 of the second light emitting layer 424 may be set to be within a range of 2,150 Å to 2,600 Å from the interface between the substrate 401 and the first electrode 402.

The third light emitting portion 430 includes a third electron transport layer (ETL) 436, a third emission layer (EML) 434, and a third hole transport layer (HTL) 432 under the second electrode 404 .

Although not shown in the drawing, an electron injection layer (EIL) may be further formed on the third electron transport layer (ETL) 436.

A hole injection layer (HIL) may be further formed under the third hole transport layer (HTL) 432.

A hole blocking layer (HBL) may further be formed on the third emission layer (EML) 434. The third electron transport layer (ETL) 436 and the hole blocking layer HBL may be formed as one layer.

An electron blocking layer (EBL) may be further formed under the third emission layer (EML) 434. The third hole transport layer (HTL) 432 and the electron blocking layer (EBL) may be formed as one layer.

The third emission layer (EML) 434 is formed of a blue light emitting layer or a blue light emitting layer including an auxiliary light emitting layer capable of emitting different colors. The blue light emitting layer may include one of a blue light emitting layer, a deep blue light emitting layer, and a sky blue light emitting layer.

The auxiliary light-emitting layer may be formed of one of a yellow-green light-emitting layer, a red light-emitting layer, and a green light-emitting layer, or a combination thereof. When the auxiliary light-emitting layer is further formed, the emission efficiency of the green light-emitting layer and the red light-emitting layer can be further improved. When forming the third light emitting layer (EML) 434 including the auxiliary light emitting layer, the yellow-green light emitting layer, the red light emitting layer, or the green light emitting layer is formed in the third light emitting layer (EML) It is also possible to arrange it on or below the upper portion 434. Further, a yellow-green or red light-emitting layer or a green light-emitting layer may be formed on the lower and upper portions of the third light-emitting layer (EML) 434 as the auxiliary light- have. The position and the number of the light emitting layer can be selectively arranged depending on the configuration and characteristics of the device, and the present invention is not limited thereto.

When the auxiliary light emitting layer is formed on the third light emitting layer (EML) 434, the peak wavelength of the light emitting region of the third light emitting layer (EML) 434 may be in the range of 440 nm to 650 nm. have. Here, the peak wavelength may be a light emitting region.

A second charge generating layer (CGL) 450 may be further formed between the second light emitting portion 420 and the third light emitting portion 430. The second charge generation layer (CGL) 450 may include an N-type charge generation layer (N-CGL) and a P-type charge generation layer (P-CGL).

The second light emitting layer (EML) 424, the second electron transport layer (ETL) 426, the third hole transport layer (HTL) 432, the second charge generation layer (CGL) 450, (HIL), an electron blocking layer (EBL), a hole blocking layer (HBL), and the like can be referred to as an organic layer. All the organic layers between the second emission layer (EML) 424 and the third emission layer (EML) 434 and the second emission layer (EML) 424 may be referred to as an organic layer. Therefore, all of the organic layers between the second emission layer (EML) 424 and the third emission layer (EML) 434 may be referred to as a third organic layer.

(HTL) 432 regardless of the number or thickness of the second electron transport layer (ETL) 426 or the thickness or thickness of the third hole transport layer (HTL) 432, regardless of the number or thickness of the second emission layer Irrespective of the number or thickness of the second charge generation layer (CGL) 450 or the number or thickness of the hole injection layer (HIL), or the number or thickness of the electron blocking layer (EBL) (EML) 414, regardless of the number or thickness of the hole blocking layer (HBL) or the number or thickness of the first light emitting layer (EML) 414, or between the substrate 401 and the first light emitting layer Regardless of the number or thickness of all the organic layers between the first emission layer (EML) 414 and the second emission layer (EML) 424, or the number or thickness of all organic layers between the first emission layer (EML) 414 and the second emission layer (EML) 424 regardless of the number and thickness of all the organic layers between the second light emitting layer (EML) 424 and the third light emitting layer (EML) 434 may be set to be within a range of 3,300 Å to 3,850 Å from the first electrode 402. Alternatively, the emission position L3 of the third emission layer (EML) 434 may be set within a range of 3,300 A to 3,850 A from the interface between the substrate 401 and the first electrode 402.

Therefore, the number of the first organic layers, the thickness of the first organic layer, the number of the second organic layers, the thickness of the second organic layer, the number of the first light emitting layers, the thickness of the first light emitting layer, The light emitting position L3 of the third light emitting layer (EML) 434 is the same as that of the first electrode 402 (EML) regardless of the number of organic layers, the thickness of the third organic layer, the number of the second light emitting layers, ) To 3,300 A to 3,850 ANGSTROM. Or the number of the first organic layers, the thickness of the first organic layers, the number of the second organic layers, the thickness of the second organic layers, the number of the third organic layers, the thickness of the third organic layers, The light emitting position L3 of the third light emitting layer (EML) 434 may be different from the light emitting position L3 of the substrate 401, regardless of the number of the light emitting layers, the thickness of the first light emitting layer, the number of the second light emitting layers, And may be set within a range of 3,300 A to 3,850 A from the interface of the first electrode 402.

All layers such as the third emission layer (EML) 434, the third electron transport layer (ETL) 436, the hole blocking layer (HBL), and the electron injection layer (EIL) may be referred to as an organic layer. All the organic layers between the third emission layer (EML) 434 and the second electrode 404 and the third emission layer (EML) 434 may be referred to as an organic layer. Accordingly, all of the organic layers between the third emission layer (EML) 434 and the second electrode 404 may be referred to as a first organic layer.

Regardless of the number or thickness of the third electron transport layer (ETL) 436 or the number or thickness of the electron injection layer (EIL) or regardless of the number or thickness of the hole blocking layer (HBL) Regardless of the number or thickness of the EML 434 or the number or thickness of the second EML 424 or the number or thickness of the first EML 414, (EML) 414 and the second light emitting layer (EML) 424, regardless of the number or thickness of all the organic layers between the substrate 401 and the first light emitting layer (EML) 414, Regardless of the number or thickness of all the organic layers between the second light emitting layer (EML) 424 and the third light emitting layer (EML) 434, or the number or thickness of all the organic layers between the second light emitting layer (L0) of the second electrode 404, regardless of the thickness of all the organic layers between the light emitting layer (EML) 434 and the second electrode 404, It can be set so as to be positioned in the range of 3,500Å to 4,500Å group from the first electrode 402. The Alternatively, the position L0 of the second electrode 404 may be set to be within a range of 3,500 to 4,500 angstroms from the interface between the substrate 401 and the first electrode 402.

Therefore, the number of the at least one first organic layer, the thickness of the first organic layer, the number of the second organic layers, the thickness of the second organic layer, the number of the third organic layers, the thickness of the third organic layer, The number of the first light emitting layers, the number of the organic layers, the thickness of the fourth organic layer, the number of the first light emitting layers, the thickness of the first light emitting layer, the number of the second light emitting layers, The position L0 of the second electrode 404 can be set to be within a range of 3,500 to 4,500 angstroms from the first electrode 402 regardless of the thickness of the second electrode 404. Or the number of the at least one first organic layer, the thickness of the first organic layer, the number of the second organic layers, the thickness of the second organic layer, the number of the third organic layers, the thickness of the third organic layer, The number of the first light emitting layers, the number of the organic layers, the thickness of the fourth organic layer, the number of the first light emitting layers, the thickness of the first light emitting layer, the number of the second light emitting layers, The position L0 of the second electrode 404 can be set to be within a range of from 3,500 to 4,500 angstroms from the interface between the substrate 401 and the first electrode 402.

Here, the emission position L3 of the third emission layer (EML) 434 may be set to be within a range of 4,500 A to 5,100 A from the first electrode 402. The position (L0) of the second electrode 404 may be set to be within a range of 4,500 to 6,000 angstroms from the first electrode 402. When the emission position L3 of the third emission layer (EML) 434 is set to 5,000 ANGSTROM from the second electrode 403, the position L0 of the second electrode 404 is set to the first electrode 402 in the range of 4,550 to 6,000 angstroms. When the light emitting position L3 of the third emission layer 434 is set to 5,100 angstroms from the first electrode 402, the position L0 of the second electrode 404 is set to the first And can be set to be within a range of 5, 150A to 6,000A from the electrode 402.

Accordingly, the present invention provides a method of manufacturing a light emitting device, comprising the steps of: preparing a first organic layer, a second organic layer, a second organic layer, The number of the third organic layers, the thickness of the fourth organic layer, the number of the first light emitting layers, the thickness of the first light emitting layer, the number of the second light emitting layers, the thickness of the second light emitting layer, The positions of the second electrode 404 and the positions of the light emitting layers can be set from the first electrode 402 regardless of the thickness of the third light emitting layer.

The structure shown in FIG. 38 shows an example of the present invention. The structure shown in FIG. 38 can be selectively formed according to the structure and characteristics of the organic light emitting device, but is not limited thereto.

FIG. 39 is a view showing a light emitting position of an organic light emitting diode according to an eleventh embodiment of the present invention. FIG.

In FIG. 39, the abscissa represents the wavelength region of light, and the ordinate represents the emission position of the light emitting layers constituting the light emitting portion from the first electrode 402, which may be referred to as a contour map. Here, except for the second electrode 404, the emission position of the light emitting layers in the emission peak when the EPEL structure of the present invention is applied is shown. The light emitting regions of the light emitting layers have the maximum light emitting range.

Since the first emission layer (EML) 414 constituting the first emission layer 410 is a yellow-green emission layer, the peak emission wavelength of the emission region of the first emission layer (EML) 414 peak wavelength range may range from 510 nm to 580 nm. It is necessary to emit light at 510 nm to 580 nm which is a light emitting region of a yellow-green light emitting layer, thereby achieving maximum efficiency in a white region of a contour map.

Accordingly, the emission position of the first emission layer (EML) 414 is set in the range of 1,500 to 2,050 angstroms, and the emission peak 414E is positioned at 510 nm to 580 nm. As a result, light can be emitted from the first emission layer (EML) 414 at 510 nm to 580 nm, thereby achieving maximum efficiency.

The first light emitting layer (EML) 414 of the first light emitting portion 410 may be formed of two layers, a red light emitting layer and a green light emitting layer, depending on the characteristics and structure of the device. The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. The peak wavelength of the luminescent region of the green light emitting layer may be in the range of 510 nm to 560 nm. Therefore, in this case, it is required to emit light at 510 nm to 650 nm which is the light emitting region of the first light emitting layer (EML) 414, so that the maximum efficiency can be obtained in the white region of the contour map.

The first light emitting layer (EML) 414 of the first light emitting portion 410 is composed of two layers of a red light emitting layer and a yellow-green light emitting layer according to the characteristics and structure of the device. can do. The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. The peak wavelength of the light emitting region of the yellow-green light emitting layer may be in the range of 510 nm to 580 nm. Therefore, in this case, it is required to emit light at 510 nm to 650 nm which is the light emitting region of the first light emitting layer (EML) 414, so that the maximum efficiency can be obtained in the white region of the contour map.

The first light emitting layer (EML) 414 of the first light emitting portion 310 may include two layers of a yellow light emitting layer and a red light emitting layer depending on the characteristics and structure of the device. The peak wavelength of the light emitting region of the yellow light emitting layer may be in the range of 540 nm to 580 nm. The peak wavelength of the light emitting region of the red light emitting layer may be in the range of 600 nm to 650 nm. Therefore, in this case, it is necessary to emit light at 540 nm to 650 nm, which is the light emitting region of the first light emitting layer (EML) 414, so that maximum efficiency can be obtained in the white region of the contour map.

Accordingly, a yellow-green light-emitting layer, a yellow light-emitting layer, a red light-emitting layer, a red light-emitting layer, and a green light-emitting layer may be used as the first light- A peak wavelength range of the luminescent region of the first emission layer (EML) 314 is 510 (nm), and a peak wavelength of the luminescent region of the first emission layer (EML) Nm to 650 nm. In this case, it is necessary to emit light at 510 nm to 650 nm which is a light emitting region of the first light emitting layer (EML) 414, so that maximum efficiency can be obtained in the white region of the contour map.

39 does not include an auxiliary light emitting layer in the first light emitting layer (EML) 414, and the first light emitting layer (EML) 414 shows a light emitting position using a yellow-green light emitting layer as an example. Therefore, the peak wavelength range of the emission region of the first emission layer (EML) 414 can exhibit the maximum efficiency in the range of 510 nm to 580 nm.

The second light emitting layer (EML) 424 constituting the second light emitting portion 420 is a blue light emitting layer. Therefore, the peak wavelength range of the light emitting region of the second light emitting layer (EML) 424 May range from 440 nm to 480 nm. It is necessary to emit light at 440 nm to 480 nm which is a light emitting region of a blue light emitting layer, so that maximum efficiency can be obtained in a white region of a contour map.

Therefore, the emission position of the second emission layer (EML) 424 is set to a range of 2,150 Å to 2,600 Å, so that the emission peak 424E of the second emission layer (EML) 424 is in the range of 440 nm to 480 Nm. Therefore, the second light emitting layer (EML) 44 emits light at 440 nm to 480 nm, thereby achieving maximum efficiency.

The blue light emitting layer may include one of a blue light emitting layer, a deep blue light emitting layer, and a sky blue light emitting layer.

A yellow-green or red light-emitting layer or a green light-emitting layer is formed as an auxiliary light-emitting layer in the second light-emitting layer (EML) 424 constituting the second light-emitting portion 420 , The peak wavelength range of the emission region of the second emission layer (EML) 424 may range from 440 nm to 650 nm. Therefore, in this case, it is necessary to emit light at 440 to 650 nm, which is the light emitting region of the second light emitting layer (EML) 424, so that maximum efficiency can be obtained in the white region of the contour map.

39 does not include an auxiliary light emitting layer in the second light emitting layer (EML) 424, and the second light emitting layer (EML) 424 shows a light emitting position using a blue light emitting layer as an example. Therefore, the peak wavelength range of the emission region of the second emission layer (EML) 424 can exhibit the maximum efficiency in the range of 440 nm to 480 nm.

Since the third emission layer (EML) 434 of the third emission layer 430 is a blue emission layer, the peak wavelength range of the emission region of the third emission layer (EML) May range from 440 nm to 480 nm. It is necessary to emit light at 440 nm to 480 nm which is a light emitting region of a blue light emitting layer, so that maximum efficiency can be obtained in a white region of a contour map.

Therefore, the emission position of the third emission layer (EML) 434 is set in the range of 3,300 Å to 3,850 Å, so that the emission peak 434E of the third emission layer (EML) 434 is in the range of 440 nm to 480 Nm. As a result, the third light emitting layer (EML) 434 emits light at 440 nm to 480 nm, thereby achieving maximum efficiency.

The blue light emitting layer may include one of a blue light emitting layer, a deep blue light emitting layer, and a sky blue light emitting layer.

A yellow-green or red light-emitting layer or a green light-emitting layer may be formed as an auxiliary light-emitting layer in the third light-emitting layer (EML) 434 constituting the third light-emitting portion 430 , The peak wavelength range of the emission region of the third emission layer (EML) 434 may range from 440 nm to 650 nm. Therefore, in this case, it is necessary to emit light at 440 to 650 nm, which is a light emitting region of the third light emitting layer (EML) 434, so that maximum efficiency can be obtained in the white region of the contour map.

39 does not include an auxiliary light emitting layer in the third light emitting layer (EML) 434, and the third light emitting layer (EML) 434 shows a light emitting position using a blue light emitting layer as an example. Therefore, the peak wavelength range of the emission region of the third emission layer (EML) 434 can reach the maximum efficiency in the range of 440 nm to 480 nm.

As described above, the position of the emission peak changes according to the emission position of the emission layer. The present invention applies an emission position of emission (EPEL) structure in which the emission peak of the emission layer is positioned in a desired emission region by setting the emission position of the emission layer constituting the emission portion.

Accordingly, the emission peak is positioned at a specific wavelength by applying the emission position of the emission layer (EPEL) structure to the emission layer, so that the emission layers can maximize efficiency in the light corresponding to a specific wavelength.

A maximum emission range of the light emitting layers in the emission region having the specific wavelength can be referred to as a maximum emission range. The maximum emission range of the first emission layer is 530 nm to 570 nm, the maximum emission range of the second emission layer is 440 nm to 470 nm, and the maximum emission range of the third emission layer is 440 nm to 470 nm.

That is, in order to emit light at 440 nm to 470 nm, which is the maximum emission range of the blue emission layer, and 530 nm to 570 nm, which is the maximum emission range of the yellow-green emission layer, The maximum efficiency can be achieved in the white area. It can be seen that the light emitting layer can achieve the maximum efficiency by setting the light emitting position of the light emitting layer of the present invention to correspond to the light emitting region. The EPEL structure of the present invention is characterized in that the number of the first organic layers, the thickness of the first organic layers, the number of the second organic layers, the thickness of the second organic layers, the number of the third organic layers, The thickness of the fourth organic layer, the thickness of the fourth organic layer, the number of the first light emitting layer, the thickness of the first light emitting layer, the number of the second light emitting layer, the thickness of the second light emitting layer, The first light emitting layer, the second light emitting layer, and the third light emitting layer have a maximum light emitting range regardless of the thickness of the third light emitting layer, so that the light emitting layer can achieve the maximum efficiency.

40 is a diagram showing an EL spectrum according to an eleventh embodiment of the present invention.

In FIG. 40, the abscissa represents the wavelength region of light, and the ordinate represents the intensity of light. The emission intensity is a relative value based on the maximum value of the EL spectrum.

In FIG. 40, the embodiment (minimum position) is a portion set to the minimum position when the light emitting positions of the light emitting layers are set. For example, when the emission position L1 of the first emission layer (EML) 414 is in a range of 1,500 to 2,050 angstroms from the first electrode 402, the minimum position is set to 1,500 angstroms.

The embodiment (maximum position) is a portion set to the maximum position when the light emitting positions of the light emitting layers are set. When the emission position L1 of the first emission layer (EML) 414 is in a range of 1,500 to 2,050 angstroms from the first electrode 402, the maximum position is set to 2,050 angstroms.

The embodiment (optimum position) is a portion set to the light emitting position of the eighth embodiment of the present invention. For example, when the emission position L1 of the first emission layer (EML) 414 is in the range of 1,500 to 2,050 angstroms from the first electrode 402, the emission position of the embodiment is in the range of 1,500 to 2,050 angstroms .

As shown in FIG. 40, when the minimum position of the emission position is deviated from the optimum position in the EPEL (Emission Position of Emitting Layers) structure of the present invention, it is as follows. The emission intensity decreases at 440 nm to 480 nm, which is the peak wavelength range of blue light. The luminescence intensity is decreased at 510 nm to 580 nm, which is the peak wavelength range of yellow-green light, and the peak wavelength of yellow-green light is out of range. Able to know. It can be seen that the luminescence intensity is remarkably decreased at 600 nm to 650 nm, which is the peak wavelength range of red light.

In the EPEL (Emission Position of Emitting Layers) structure of the present invention, when the maximum position of the emission position is deviated, the optimum position is as follows. The emission intensity decreases at 440 nm to 480 nm, which is the peak wavelength range of blue light. It can be seen that the luminescence intensity is significantly reduced at 510 nm to 580 nm, which is the peak wavelength range of yellow-green light.

Accordingly, it can be seen that the emission intensity increases in the peak wavelength range of blue light when the optimum position of the present invention is set, compared with the case where the minimum or maximum position of the embodiment is set. Further, it can be seen that the emission intensity increases in the peak wavelength range of yellow-green light when the optimum position of the present invention is set to the minimum position or the maximum position of the embodiment. It can be seen that the emission intensity is increased in the peak wavelength range of red light when it is set to the optimum position of the present invention.

The panel efficiency of the white organic light emitting device and the comparative example using the EPEL (Emission Position of Emitting Layers) structure of the present invention are as shown in Table 21 below. And the efficiency of the comparative example is 100%, the efficiency of the eleventh embodiment of the present invention is shown.

Table 21 below compares the efficiency of the comparative example and the embodiment of the present invention. The comparative example is a Bottom Emission type white organic light emitting device including a first light emitting portion, a second light emitting portion and a third light emitting portion. The first light emitting portion is a blue light emitting layer, the second light emitting portion is a yellow- Yellow-Green) light-emitting layer, and the third light-emitting portion is a blue light-emitting layer. The embodiment is a top emission type white organic light emitting device when an optimum position of an EPEL (Emission Position of Emitting Layers) structure of the present invention is applied.

As shown in Table 21, when the efficiency of the comparative example was 100%, the red efficiency was increased by about 22% and the green and blue Blue) and white (White) efficiency are almost similar to the comparative example.

The panel efficiency of the white organic light emitting device using the EPEL (Emission Position of Emitting Layers) structure of the present invention and the comparative example are as shown in Table 22 below.

Table 22 below shows the efficiencies of the embodiment (minimum position) and the embodiment (maximum position) when the efficiency of the embodiment (optimum position) is taken as 100%.

The panel efficiency was measured when the driving current density was 10 mA / cm ² . When the panel efficiency of the embodiment is 100%, the panel efficiency of the embodiment (minimum position) and the embodiment (maximum position) are measured.

As shown in Table 22, the efficiency of red, green, blue, and white is reduced at the boundary between the embodiment (minimum position) and the embodiment (maximum position) . It can be seen that the efficiencies of red, green, blue, and white are further reduced in the embodiment (minimum position) than in the embodiment (maximum position).

Therefore, it can be seen that the panel efficiency decreases when the optimal position of the emission position of the EPEL structure of the present invention is deviated.

As described in the eleventh embodiment of the present invention, the organic light emitting device may be an organic light emitting device of a bottom emission type.

The position of the second electrode may be set in the range of 3,500 to 4,500 angstroms from the first electrode.

The light emitting position of the first light emitting layer can be set in the range of 1,500 A to 2,050 A from the first electrode.

The light emitting position of the second light emitting layer can be set in the range of 2,150 Å to 2,600 Å from the first electrode.

The light emitting position of the third light emitting layer can be set in the range of 3,300 A to 3,850 A from the first electrode.

The first light emitting layer may include a yellow-green light emitting layer, or a yellow light emitting layer and a red light emitting layer, or a red light emitting layer and a green light emitting layer, or a yellow-green light emitting layer and a red light emitting layer, or a combination thereof.

The second light emitting layer and the third light emitting layer may be composed of a blue light emitting layer, a blue light emitting layer and a yellow-green light emitting layer, or a blue light emitting layer and a red light emitting layer, or a blue light emitting layer and a green light emitting layer, or a combination thereof.

The light emitting region of the first light emitting layer may range from 510 nm to 650 nm, the light emitting region of the second light emitting layer may range from 440 nm to 650 nm, and the light emitting region of the third light emitting layer may range from 440 nm to 650 nm.

Wherein the maximum emission range of the first emission layer is in the range of 530 nm to 570 nm, the maximum emission range of the second emission layer is in the range of 440 nm to 470 nm, and the maximum emission range of the third emission layer is in the range of 440 nm to 470 nm .

As described above, it can be seen that the emission intensity of the light emitting layer can be increased when the EPEL (Emission Position of Emitting Layers) structure of the present invention is applied. Further, it can be seen that the panel efficiency is improved because the emission intensity is increased.

FIG. 41 is a cross-sectional view of an organic light emitting display device including an organic light emitting device according to an embodiment of the present invention, which uses the organic light emitting device according to the tenth and eleventh embodiments of the present invention. In describing the present embodiment, description of the same or corresponding elements to those of the previous embodiment will be omitted.

41, the OLED display 4000 according to the present invention includes a substrate 40, a thin film transistor (TFT), an overcoat layer 4150, a first electrode 402, a light emitting portion 4180, And a second electrode (104). The thin film transistor TFT includes a gate electrode 4115, a gate insulating layer 4120, a semiconductor layer 4131, a source electrode 4133 and a drain electrode 4135.

In FIG. 41, although the thin film transistor (TFT) is shown as an inverted staggered structure, it may be formed in a coplanar structure.

The substrate 40 may be made of glass, metal, or plastic.

A gate electrode 4115 is formed on the substrate 40. A gate insulating layer 4120 is formed on the gate electrode 4115.

A semiconductor layer 4131 is formed on the gate insulating layer 4120.

The source electrode 4133 and the drain electrode 4135 may be formed on the semiconductor layer 4131. [

A protective layer 4140 is formed on the source electrode 4133 and the drain electrode 4135.

A color filter 4145 is formed on the first passivation layer 4140.

An overcoat layer 4150 is formed on the color filter 4145.

A first electrode 402 is formed on the overcoat layer 4150. The first electrode 402 is electrically connected to the drain electrode 4135 through the contact hole CH of the protective layer 4140 and a predetermined region of the overcoat layer 4150. The drain electrode 4135 and the first electrode 4102 are electrically connected to each other through the contact hole CH of the protective layer 4140 and the overcoat layer 4150, 4133 and the first electrode 402 may be electrically connected to each other.

A bank layer 4170 is formed on the first electrode 402 and defines a pixel region.

The light emitting portion 4180 is formed on the bank layer 4170. The light emitting unit 4180 includes a first light emitting unit 410, a second light emitting unit 420, and a second light emitting unit 420 formed on the first electrode 402, as shown in the tenth and eleventh embodiments of the present invention. And a third light emitting portion 430.

The second electrode 404 is formed on the light emitting portion 4180.

Although not shown in FIG. 41, a sealing portion may be formed on the second electrode 404. The sealing part prevents water from penetrating into the light emitting part 4180. The sealing substrate may be made of glass or plastic, or may be made of metal.

Although the embodiments of the present invention have been described in detail with reference to the accompanying drawings, it is to be understood that the present invention is not limited to those embodiments and various changes and modifications may be made without departing from the scope of the present invention. . Therefore, the embodiments disclosed in the present invention are intended to illustrate rather than limit the scope of the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. Therefore, it should be understood that the above-described embodiments are illustrative in all aspects and not restrictive. The scope of protection of the present invention should be construed according to the claims, and all technical ideas within the scope of equivalents should be interpreted as being included in the scope of the present invention.

100, 200, 300, 400: white organic light emitting device
102, 202, 302, 402: a first electrode
104, 204, 304, 404: a second electrode
110, 210, 310, and 410:
120, 220, 320, 420:
130, 230, 330, and 430:
114, 214, 314, 414: first light emitting layer
124, 224, 324, 424:
134, 234, 334, 434:

Claims (38)

A first light emitting portion including a first light emitting layer, the first light emitting portion being between the first electrode and the second electrode;
A second light emitting portion including a second light emitting layer, the second light emitting portion being on the first light emitting portion; And
And a third light emitting portion that includes a third light emitting layer and is disposed on the second light emitting portion,
Wherein the first light emitting portion, the second light emitting portion, and the third light emitting portion have an emission position of an emission structure (EPEL) structure having a maximum emission range in the light emitting regions of the first, second and third light emitting layers Wherein the white organic light emitting device is a white organic light emitting device. The method according to claim 1,
Wherein the organic light emitting device is a bottom emission type organic light emitting device. 3. The method of claim 2,
Wherein a position of the first electrode is set in a range of 4,500 to 6,000 angstroms from the second electrode. 3. The method of claim 2,
Wherein a light emitting position of the third light emitting layer is set in a range of 200 Å to 800 Å from the second electrode. 3. The method of claim 2,
Wherein a light emitting position of the second light emitting layer is set in a range of 1,800 to 2,550 angstroms from the second electrode. 3. The method of claim 2,
Wherein a light emitting position of the first light emitting layer is set in a range of from 2,650 Å to 3,300 Å from the second electrode. The method according to claim 1,
Wherein the first light emitting layer comprises one of a blue light emitting layer, a blue light emitting layer and a yellow-green light emitting layer, or a blue light emitting layer and a red light emitting layer, or a blue light emitting layer and a green light emitting layer, or a combination thereof. The method according to claim 1,
Wherein the second light emitting layer comprises one of a yellow-green light emitting layer, a yellow light emitting layer and a red light emitting layer, or a red light emitting layer and a green light emitting layer, or a yellow-green light emitting layer and a red light emitting layer, or a combination thereof. The method according to claim 1,
Wherein the first light emitting layer comprises one of a blue light emitting layer, a blue light emitting layer and a yellow-green light emitting layer, or a blue light emitting layer and a red light emitting layer, or a blue light emitting layer and a green light emitting layer, or a combination thereof. The method according to claim 1,
Emitting region of the first light-emitting layer is in the range of 440 nm to 650 nm,
Emitting region of the second light-emitting layer ranges from 510 nm to 650 nm,
Wherein a light emitting region of the third light emitting layer is in a range of 440 nm to 650 nm. The method according to claim 1,
The maximum light emitting range of the first light emitting layer ranges from 440 nm to 470 nm,
The maximum light emitting range of the second light emitting layer ranges from 530 nm to 570 nm,
Wherein the maximum emission range of the third emission layer is in the range of 440 nm to 470 nm. 3. The method of claim 2,
Wherein the second light emitting layer and the third light emitting layer include a light emitting layer that emits light of the same color. 13. The method of claim 12,
And the position of the first electrode is set in the range of 3,500 to 4,500 angstroms from the second electrode. 13. The method of claim 12,
Wherein a light emitting position of the third light emitting layer is set in a range of 250 ANGSTROM to 800 ANGSTROM from the second electrode. 13. The method of claim 12,
Wherein a light emitting position of the second light emitting layer is set in the range of 1,450 to 1,950 angstroms from the second electrode. 13. The method of claim 12,
Wherein a light emitting position of the third light emitting layer is set in a range of 2,050 A to 2,600 A from the second electrode. 13. The method of claim 12,
Wherein the first light emitting layer comprises one of a yellow-green light emitting layer, a yellow light emitting layer and a red light emitting layer, or a red light emitting layer and a green light emitting layer, or a yellow-green light emitting layer and a red light emitting layer, or a combination thereof. 13. The method of claim 12,
Wherein the second light emitting layer and the third light emitting layer comprise one or a combination of a blue light emitting layer, a blue light emitting layer and a yellow-green light emitting layer, or a blue light emitting layer and a red light emitting layer, device. 13. The method of claim 12,
The light emitting region of the first light emitting layer is in the range of 510 nm to 650 nm,
Emitting region of the second light-emitting layer ranges from 440 nm to 650 nm,
Wherein a light emitting region of the third light emitting layer is in a range of 440 nm to 650 nm. 13. The method of claim 12,
The maximum emission range of the first light emitting layer ranges from 530 nm to 570 nm,
The maximum emission range of the second emission layer ranges from 440 nm to 470 nm,
Wherein the maximum emission range of the third emission layer is in the range of 440 nm to 470 nm. The method according to claim 1,
Wherein the organic light emitting device is a top emission type organic light emitting device. 22. The method of claim 21,
Wherein a position of the second electrode is set in a range of 4,700 A to 5,400 A from the first electrode. 22. The method of claim 21,
Wherein a light emitting position of the first light emitting layer is set in a range of 150 ANGSTROM to 700 ANGSTROM from the first electrode. 22. The method of claim 21,
Wherein a light emitting position of the second light emitting layer is set in a range of 1,600 A to 2,300 A from the first electrode. 22. The method of claim 21,
Wherein a light emitting position of the third light emitting layer is set in a range of 2,400 Å to 3,100 Å from the first electrode. 22. The method of claim 21,
Wherein the second light emitting layer and the third light emitting layer include a light emitting layer that emits light of the same color. 27. The method of claim 26,
Wherein a position of the second electrode is set in a range of 4,700 A to 5,400 A from the first electrode. 27. The method of claim 26,
Wherein a light emitting position of the first light emitting layer is set in a range of 200 ANGSTROM to 700 ANGSTROM from the first electrode. 27. The method of claim 26,
Wherein a light emitting position of the second light emitting layer is set in a range of 1,200 A to 1,800 A from the first electrode. 27. The method of claim 26,
Wherein a light emitting position of the third light emitting layer is set in a range of 2,400 Å to 3,100 Å from the first electrode. 27. The method of claim 26,
Wherein the first light emitting layer comprises one of a yellow-green light emitting layer, a yellow light emitting layer and a red light emitting layer, or a red light emitting layer and a green light emitting layer, or a yellow-green light emitting layer and a red light emitting layer, or a combination thereof. 27. The method of claim 26,
Wherein the second light emitting layer and the third light emitting layer comprise one or a combination of a blue light emitting layer, a blue light emitting layer and a yellow-green light emitting layer, or a blue light emitting layer and a red light emitting layer, device. 27. The method of claim 26,
The light emitting region of the first light emitting layer is in the range of 510 nm to 650 nm,
Emitting region of the second light-emitting layer ranges from 440 nm to 650 nm,
Wherein a light emitting region of the third light emitting layer is in a range of 440 nm to 650 nm. 27. The method of claim 26,
The maximum emission range of the first light emitting layer ranges from 530 nm to 570 nm,
The maximum emission range of the second emission layer ranges from 440 nm to 470 nm,
Wherein the maximum emission range of the third emission layer is in the range of 440 nm to 470 nm. A first organic layer and a first light emitting layer on the substrate;
A second organic layer and a second light emitting layer on the first light emitting layer;
A third organic layer and a third light emitting layer on the second light emitting layer; And
And a fourth organic layer on the third light emitting layer,
The first light emitting layer, the second light emitting layer, and the third light emitting layer are formed on the first light emitting layer, the first light emitting layer, the second light emitting layer, and the third light emitting layer, regardless of the thickness of the at least one first organic layer, 2 emission layer and the third emission layer has a maximum emission range in an emission region of an EPEL (Emission Position of Emitting Layers) structure. 36. The method of claim 35,
Wherein the EPEL structure is a structure in which the first light emitting layer, the second light emitting layer, and the second light emitting layer, regardless of the number of the at least one first organic layer, the number of the second organic layer, the number of the third organic layer, And the third light emitting layer has a maximum emission range. 36. The method of claim 35,
The EPEL structure is a structure in which the first light emitting layer, the second light emitting layer, and the third light emitting layer have a maximum emission range regardless of the thickness of at least one of the first light emitting layer, the second light emitting layer, Wherein the organic light emitting layer is formed on the substrate. 36. The method of claim 35,
Wherein the EPEL structure is a structure in which the first light emitting layer, the second light emitting layer, and the third light emitting layer have a maximum emission range regardless of the number of the at least one first light emitting layer, the number of the second light emitting layer, Wherein the organic light emitting layer is formed on the substrate.

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