KR20150112880A - Organic compounds for an organic electroluminescent device and an organic electroluminescent device comprising the same - Google Patents

Organic compounds for an organic electroluminescent device and an organic electroluminescent device comprising the same Download PDF

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KR20150112880A
KR20150112880A KR1020150042679A KR20150042679A KR20150112880A KR 20150112880 A KR20150112880 A KR 20150112880A KR 1020150042679 A KR1020150042679 A KR 1020150042679A KR 20150042679 A KR20150042679 A KR 20150042679A KR 20150112880 A KR20150112880 A KR 20150112880A
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dibenzothiophene
electroluminescent device
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이순창
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머티어리얼사이언스 주식회사
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    • C07D209/00Heterocyclic compounds containing five-membered rings, condensed with other rings, with one nitrogen atom as the only ring hetero atom
    • C07D209/56Ring systems containing three or more rings
    • C07D209/80[b, c]- or [b, d]-condensed
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Abstract

The present invention provides an organic compound for a novel organic electroluminescent element selected from the group consisting of chemical formula 1 and an organic electroluminescent element comprising the organic compound.

Description

유기전계발광소자용 유기화합물 및 그를 포함하는 유기전계발광소자{Organic compounds for an organic electroluminescent device and an organic electroluminescent device comprising the same}TECHNICAL FIELD The present invention relates to an organic compound for an organic electroluminescent device and an organic electroluminescent device including the organic compound.

본 발명은 유기전계발광소자에 사용되는 신규한 유기화합물 및 그를 포함하는 유기전계발광소자에 관한 것으로서, 특히, 정공수송층(HTL) 또는 전자차단층(EBL) 물질로 사용될 수 있는 신규한 유기화합물 및 그를 포함하는 유기전계발광소자에 관한 것이다.The present invention relates to a novel organic compound used in an organic electroluminescent device and an organic electroluminescent device comprising the same, and more particularly to a novel organic compound which can be used as a hole transporting layer (HTL) or an electron blocking layer (EBL) And an organic electroluminescent device including the same.

현재까지 평판 디스플레이의 대부분을 액정 디스플레이가 차지하고 있으나, 보다 경제적이고 성능이 뛰어나면서 액정 디스플레이와 차별화된 새로운 평판 디스플레이를 개발하려는 노력이 전세계적으로 활발히 진행되고 있다. 최근 차세대 평판 디스플레이로 각광을 받고 있는 유기전계발광소자는 액정 디스플레이에 비해 낮은 구동전압, 빠른 응답속도 및 광시야각 등의 장점을 가지고 있다.Although liquid crystal displays occupy the majority of flat panel displays to date, efforts to develop new flat panel displays that are more economical and superior in performance and differentiated from liquid crystal displays have been actively conducted worldwide. Organic electroluminescent devices, which are currently attracting attention as next generation flat panel displays, have advantages such as lower driving voltage, faster response speed and wide viewing angle as compared with liquid crystal displays.

일반적으로 유기전계발광소자의 가장 간단한 구조는 발광층 및 상기 층을 낀 한 쌍의 대향전극으로 구성되어 있다. 즉, 유기전계발광소자에서는 양 전극간에 전계가 인가되면, 음극으로부터 전자가 주입되고, 양극으로부터 정공이 주입되어 이들이 발광층에 있어서 재결합하여 광을 방출하는 현상을 이용한다.In general, the simplest structure of an organic electroluminescent device is composed of a light emitting layer and a pair of opposite electrodes sandwiching the layer. That is, in the organic electroluminescent device, when an electric field is applied between the electrodes, electrons are injected from the cathode, holes are injected from the anode, and they are recombined in the light emitting layer to emit light.

보다 자세한 유기전계발광소자의 구조는 기판, 애노드, 애노드에서 정공을 받아들이는 정공주입층, 정공을 수송하는 정공수송층, 발광층으로부터 정공수송층으로 전자의 진입을 저지하는 전자차단층, 정공과 전자가 결합하여 빛을 내는 발광층, 발광층에서 전자수송층으로 정공의 진입을 저지하는 정공저지층, 캐소드에서 전자를 받아들여 발광층으로 수송하는 전자수송층, 캐소드에서 전자를 받아들이는 전자주입층 및 캐소드로 구성되어 있다. 경우에 따라서 별도의 발광층 없이 전자수송층이나 정공수송층에 소량의 형광 또는 인광성 염료를 도핑하여 발광층을 구성할 수도 있으며, 고분자를 사용할 경우에는 일반적으로 하나의 고분자가 정공수송층과 발광층 및 전자수송층의 역할을 동시에 수행할 수 있다. 두 전극 사이의 유기물 박막층들은 진공증착법 또는 스핀 코팅, 잉크젯 프린팅, 레이저 열전사법등의 방법으로 형성된다. 이렇게 유기전계발광소자를 다층 박막 구조로 제작하는 이유는 전극과 유기물 사이의 계면 안정화를 위함이며 또한 유기물질의 경우, 정공과 전자의 이동 속도 차이가 크므로 적절한 정공수송층과 전자수송층을 사용하여 정공과 전자를 발광층으로 효과적으로 전달하여 정공과 전자의 밀도가 균형을 이루도록 하면 발광 효율을 높일 수 있기 때문이다.A more detailed structure of the organic electroluminescent device includes a substrate, an anode, a hole injecting layer for receiving holes in the anode, a hole transporting layer for transporting holes, an electron blocking layer for blocking electrons from entering from the light emitting layer to the hole transporting layer, A hole blocking layer for blocking the entrance of holes from the light emitting layer into the electron transporting layer, an electron transporting layer for receiving electrons from the cathode to transport electrons to the light emitting layer, an electron injection layer for receiving electrons from the cathode, and a cathode. In some cases, a light emitting layer may be formed by doping a small amount of a fluorescent or phosphorescent dye to an electron transporting layer or a hole transporting layer without a separate light emitting layer. When a polymer is used, generally one polymer acts as a hole transporting layer, a light emitting layer and an electron transporting layer Can be performed simultaneously. The organic thin film layers between the two electrodes are formed by a vacuum deposition method, a spin coating method, an inkjet printing method, a laser thermal transfer method, or the like. The reason for fabricating the organic electroluminescent device as a multilayer thin film structure is to stabilize the interface between the electrode and the organic material, and in the case of the organic material, the difference in the movement speed of holes and electrons is large. Therefore, by using a proper hole transporting layer and an electron transporting layer, And electrons are effectively transferred to the light-emitting layer so that the densities of the holes and electrons are balanced, thereby improving the luminous efficiency.

유기전계발광소자의 구동 원리는 다음과 같다. 상기 애노드 및 캐소드 간에 전압을 인가하면 애노드로부터 주입된 정공은 정공주입층 및 정공수송층을 경유하여 발광층으로 이동된다. 한편, 전자는 캐소드로부터 전자주입층 및 전자수송층을 경유하여 발광층에 주입되고 발광층 영역에서 캐리어들이 재결합하여 엑시톤(exiton)을 생성한다. 이 엑시톤이 여기 상태에서 기저 상태로 변화되고, 이로 인하여 발광층의 형광성 분자가 발광함으로써 화상이 형성된다. 이때 여기 상태가 일중항 여기 상태를 통하여 기저 상태로 떨어지면서 발광하는 것을 ?奐?이라고 하며, 삼중항 여기 상태를 통하여 기저 상태로 떨어지면서 발광하는 것을 ?慣?이라고 한다. 형광의 경우, 일중항 여기 상태의 확률일 25%(삼중항 상태 75%)이며, 발광 효율의 한계가 있는 반면에 인광을 사용하면 삼중항 상태 75%와 일중항 여기 상태 25%까지 발광에 이용할 수 있으므로 이론적으로 내부양자 효율 100%까지 가능하다.The driving principle of the organic electroluminescent device is as follows. When a voltage is applied between the anode and the cathode, the holes injected from the anode are transferred to the light emitting layer via the hole injecting layer and the hole transporting layer. On the other hand, electrons are injected from the cathode to the light emitting layer via the electron injection layer and the electron transport layer, and carriers are recombined in the light emitting layer region to generate an exiton. This exciton is changed from the excited state to the ground state, whereby the fluorescent molecules of the light emitting layer emit light, whereby an image is formed. At this time, it is called? 奐 ?, that the excited state is emitted when the excited state falls to the ground state through the singlet excited state, and it is said that it emits light while falling to the ground state through the triplet excitation state. In the case of fluorescence, the probability of singlet excitation is 25% (triplet state 75%), and there is a limit to the luminous efficiency. However, when phosphorescence is used, 75% of the triplet state and 25% Theoretically, the internal quantum efficiency can be up to 100%.

이러한 유기전계발광소자에 있어 가장 문제가 되는 것은 수명과 효율인데, 디스플레이가 대면적화되면서 이러한 효율이나 수명문제는 반드시 해결해야 되는 상황이다.The most problematic of such an organic electroluminescent device is its lifetime and efficiency. However, as the display becomes larger, efficiency and life time problems must be solved.

유기전계발광소자에 있어서 발광층과 정공수송층 사이에, 전자가 발광층에서 결합하지 않고 정공수송층으로 주입되는 것을 저지하고, 전자를 발광층 내에 봉입하여 전자와 정공의 재결합 확률을 향상시키기 위하여 전자차단층(EBL)이 설치될 수 있다.In an organic electroluminescent device, an electron blocking layer (EBL) is formed between the light emitting layer and the hole transporting layer to prevent electrons from being injected into the hole transporting layer without bonding in the light emitting layer and to improve the probability of recombination of electrons and holes by enclosing electrons in the light emitting layer. ) Can be installed.

정공수송층이 정공을 잘 전달하고, 전자차단층(EBL)이 상기와 같은 기능을 효율적을 수행하는 경우, 소자의 구동전압이 낮아지고 발광효율 및 휘도도 증가될 수 있으며, 유기전계발광소자의 발광수명도 연장될 수 있다. When the hole transport layer transmits holes well and the electron blocking layer (EBL) performs the functions as described above, the driving voltage of the device can be lowered, the luminous efficiency and brightness can be increased, and the luminous efficiency of the organic electroluminescent device The life span can be extended.

그러나, 현재까지 정공수송층(HTL) 또는 전자차단층(EBL)을 형성할 수 있는 물질로서 안정적이고 효율적인 화합물의 개발이 충분히 이루어지지 못하고 있다. However, development of a stable and efficient compound as a material capable of forming a hole transport layer (HTL) or an electron blocking layer (EBL) has not been sufficiently developed so far.

한국공개특허 10-2010-0103837Korean Patent Application No. 10-2010-0103837

본 발명은 정공수송층 또는 전자차단층 물질로서 유기전기발광소자에 적용할 수 있으며, 유기전기발광소자에 적용할 경우 구동전압을 낮출 수 있으며, 발광효율, 휘도, 열적 안정성 및 소자수명을 향상시킬 수 있는 신규한 유기화합물을 제공하는 것을 목적으로 한다.The present invention can be applied to organic electroluminescent devices as a hole transporting layer or an electron blocking layer material. When applied to an organic electroluminescent device, the present invention can lower a driving voltage and improve luminous efficiency, brightness, thermal stability, And to provide a novel organic compound having such a structure.

또한, 본 발명은 상기 유기화합물을 포함하는 정공수송층 또는 전자차단층 형성용 재료를 제공하는 것을 목적으로 한다.It is still another object of the present invention to provide a hole transport layer or a material for forming an electron blocking layer containing the organic compound.

또한, 본 발명은 상기 유기화합물을 이용한 유기전기발광소자를 제공하는 것을 목적으로 한다.It is another object of the present invention to provide an organic electroluminescence device using the organic compound.

본 발명은, 하기 화학식 1로 표시되는 신규한 유기화합물을 제공한다:The present invention provides novel organic compounds represented by the following general formula

[ [ 화학식1Formula 1 ]]

Figure pat00001
Figure pat00001

상기 식에서In the above formula

R1, R2, R3 및 R4는, 각각 독립적으로, R1, R2, R3 and R4 are each, independently,

수소, C1~C10의 직쇄 또는 분지쇄알킬, C1~C10의 알콕시, 할로겐, CN, CF3, 또는 Si(CH3)3이거나;Hydrogen, linear or branched C1 ~ C10 alkyl, alkoxy, halogen of C1 ~ C10, CN, CF 3, or Si (CH 3) 3, or;

C1~C10의 직쇄 또는 분지쇄알킬, C1~C10의 알콕시, 할로겐, CN, CF3, Si(CH3)3, 피리딜, 페닐, 나프틸기로 치환된 페닐, 바이페닐, 나프틸기, 디벤조티오펜, 및 티안트레닐기(thianthrenyl)로 이루어진 군으로부터 선택되는 하나 이상으로 치환 또는 비치환된 페닐, 나프틸, 페난트레닐, 플루오레닐, 피롤, 피라졸, 이미다졸, 트리아졸, 옥사졸, 옥사디아졸, 티오페닐, 티아졸, 티아디아졸, 피라지닐, 피리다지닐, 피리디닐, 피리미디닐, 트리아지닐, 디벤조퓨라닐, 디벤조티오펜, 카바졸, 또는 티안트레닐기(thianthrenyl)기이거나;A C1 ~ C10 linear or branched alkyl, alkoxy of C1 ~ C10, halogen, CN, CF 3, Si ( CH 3) 3, pyridyl, phenyl, naphthyl group substituted phenyl, a biphenyl, a naphthyl group, a dibenzo Thiophene, and thianthrenyl, which is unsubstituted or substituted with one or more substituents selected from the group consisting of phenyl, naphthyl, phenanthrenyl, fluorenyl, pyrrole, pyrazole, imidazole, triazole, oxazole , Oxadiazole, thiophenyl, thiazole, thiadiazole, pyrazinyl, pyridazinyl, pyridinyl, pyrimidinyl, triazinyl, dibenzofuranyl, dibenzothiophene, carbazole, or thianthrenyl group thianthrenyl group;

결합된 페닐기와 함께 디벤조티오펜기를 형성할 수 있으며;Together with the attached phenyl group, may form a dibenzothiophene group;

단, 상기 R1, R2, R3 및 R4 중 둘 이상은 수소, C1~C10의 직쇄 또는 분지쇄알킬, C1~C10의 알콕시, 할로겐, CN, CF3, 및 Si(CH3)3로 이루어진 군으로부터 선택된 치환기가 아니다.
However, the R1, R2, two or more of R3 and R4 from hydrogen, the group consisting of C1 ~ C10 linear or branched alkyl, alkoxy of C1 ~ C10, halogen, CN, CF 3, and Si (CH 3) 3 Lt; / RTI >

또한, 본 발명은In addition,

상기 화학식 1로 표시되는 유기화합물을 포함하는 정공수송층 또는 전자차단층형성용 재료를 제공한다.
There is provided a hole transporting layer or an electron blocking layer-forming material containing an organic compound represented by the above formula (1).

또한, 본 발명은In addition,

음극과 양극사이에 적어도 발광층을 포함하는 일층 또는 복수층으로 이루어지는 유기박막층이 협지되어있는 유기전기발광소자에 있어서, An organic electroluminescent device in which an organic thin film layer composed of one layer or a plurality of layers including at least a light emitting layer is sandwiched between a cathode and an anode,

상기 유기박막층중 적어도 1층 이상이 상기 화학식 1로 표시되는 유기화합물을 1종 단독으로 또는 2종 이상의 조합으로 함유하는 것을 특징으로 하는 유기전기발광소자를 제공한다.Wherein at least one of the organic thin film layers contains the organic compound represented by the formula (1) alone or in combination of two or more.

본 발명에 따른 유기화합물은 정공수송층 또는 전자차단층 물질로서 유기발광소자에 적용할 수 있으며, 유기발광소자에 적용할 경우 구동전압을 낮추며 발광효율, 휘도, 열적 안정성 및 소자수명을 향상시킨다. The organic compound according to the present invention can be applied to an organic light emitting device as a hole transporting layer or an electron blocking layer material. When applied to an organic light emitting device, the driving voltage is lowered and luminous efficiency, brightness, thermal stability, and device lifetime are improved.

또한, 본 발명의 유기화합물을 사용하여 제조되는 유기전기발광소자는 고효율 및 장수명 특성을 갖는다. In addition, the organic electroluminescence device manufactured using the organic compound of the present invention has high efficiency and long life characteristics.

본 발명은, 하기 화학식 1로 표시되는 신규한 유기화합물에 관한 것이다:The present invention relates to novel organic compounds represented by the general formula

[[ 화학식1Formula 1 ]]

Figure pat00002
Figure pat00002

상기 식에서In the above formula

R1, R2, R3 및 R4는, 각각 독립적으로, R1, R2, R3 and R4 are each, independently,

수소, C1~C10의 직쇄 또는 분지쇄알킬, C1~C10의 알콕시, 할로겐, CN, CF3, 또는 Si(CH3)3이거나;Hydrogen, linear or branched C1 ~ C10 alkyl, alkoxy, halogen of C1 ~ C10, CN, CF 3, or Si (CH 3) 3, or;

C1~C10의 직쇄 또는 분지쇄알킬, C1~C10의 알콕시, 할로겐, CN, CF3, Si(CH3)3, 피리딜, 페닐, 나프틸기로 치환된 페닐, 바이페닐, 나프틸기, 디벤조티오펜, 및 티안트레닐기(thianthrenyl)로 이루어진 군으로부터 선택되는 하나 이상으로 치환 또는 비치환된 페닐, 나프틸, 페난트레닐, 플루오레닐, 피롤, 피라졸, 이미다졸, 트리아졸, 옥사졸, 옥사디아졸, 티오페닐, 티아졸, 티아디아졸, 피라지닐, 피리다지닐, 피리디닐, 피리미디닐, 트리아지닐, 디벤조퓨라닐, 디벤조티오펜, 카바졸, 또는 티안트레닐기(thianthrenyl)기이거나;A C1 ~ C10 linear or branched alkyl, alkoxy of C1 ~ C10, halogen, CN, CF 3, Si ( CH 3) 3, pyridyl, phenyl, naphthyl group substituted phenyl, a biphenyl, a naphthyl group, a dibenzo Thiophene, and thianthrenyl, which is unsubstituted or substituted with one or more substituents selected from the group consisting of phenyl, naphthyl, phenanthrenyl, fluorenyl, pyrrole, pyrazole, imidazole, triazole, oxazole , Oxadiazole, thiophenyl, thiazole, thiadiazole, pyrazinyl, pyridazinyl, pyridinyl, pyrimidinyl, triazinyl, dibenzofuranyl, dibenzothiophene, carbazole, or thianthrenyl group thianthrenyl group;

결합된 페닐기와 함께 디벤조티오펜기를 형성할 수 있으며;Together with the attached phenyl group, may form a dibenzothiophene group;

단, 상기 R1, R2, R3 및 R4 중 둘 이상은 수소, C1~C10의 직쇄 또는 분지쇄알킬, C1~C10의 알콕시, 할로겐, CN, CF3, 및 Si(CH3)3로 이루어진 군으로부터 선택된 치환기가 아니다.
However, the R1, R2, two or more of R3 and R4 from hydrogen, the group consisting of C1 ~ C10 linear or branched alkyl, alkoxy of C1 ~ C10, halogen, CN, CF 3, and Si (CH 3) 3 Lt; / RTI >

상기 화학식 1에서, 더욱 바람직하게는, R1, R2, R3 및 R4는, 각각 독립적으로, More preferably, R 1, R 2, R 3 and R 4 in the above formula (1)

수소, C1~C10의 직쇄 또는 분지쇄알킬, C1~C10의 알콕시, 할로겐, CN, CF3, 또는 Si(CH3)3이거나;Hydrogen, linear or branched C1 ~ C10 alkyl, alkoxy, halogen of C1 ~ C10, CN, CF 3, or Si (CH 3) 3, or;

하기 치환기로부터 선택되거나; Lt; / RTI >

Figure pat00003
Figure pat00003

Figure pat00004
Figure pat00004

Figure pat00005
Figure pat00005

Figure pat00006
Figure pat00006

Figure pat00007
Figure pat00007

Figure pat00008
Figure pat00008

Figure pat00009
Figure pat00009

Figure pat00010
Figure pat00010

Figure pat00011
Figure pat00011

결합된 페닐기와 함께 디벤조티오펜기를 형성할 수 있으며;Together with the attached phenyl group, may form a dibenzothiophene group;

단, 상기 R1, R2, R3 및 R4 중 둘 이상은 수소, C1~C10의 직쇄 또는 분지쇄알킬, C1~C10의 알콕시, 할로겐, CN, CF3, 및 Si(CH3)3로 이루어진 군으로부터 선택된 치환기가 아니다.
However, the R1, R2, two or more of R3 and R4 from hydrogen, the group consisting of C1 ~ C10 linear or branched alkyl, alkoxy of C1 ~ C10, halogen, CN, CF 3, and Si (CH 3) 3 Lt; / RTI >

상기 화학식 1에서, 더 더욱 바람직하게는, R1, R2, R3 및 R4는, 각각 독립적으로, More preferably, R 1, R 2, R 3 and R 4 are each, independently,

수소 또는 C1~C10의 직쇄 또는 분지쇄알킬기이거나;Hydrogen or a C1 to C10 linear or branched alkyl group;

페닐, 디벤조티오펜, 및 티안트레닐기(thianthrenyl)로 이루어진 군으로부터 선택되는 하나 이상으로 치환 또는 비치환된 페닐, 나프틸, 페난트레닐, 디벤조퓨라닐, 디벤조티오펜, 카바졸, 또는 티안트레닐기(thianthrenyl)기이거나;Phenyl, naphthyl, phenanthrenyl, dibenzofuranyl, dibenzothiophene, carbazole, dibenzothiophene, dibenzothiophene, and thianthrenyl. Or a thianthrenyl group;

결합된 페닐기와 함께 디벤조티오펜기를 형성할 수 있으며;Together with the attached phenyl group, may form a dibenzothiophene group;

단, 상기 R1, R2, R3 및 R4 중 둘 이상은 수소 및 C1~C10의 직쇄 또는 분지쇄알킬기로 이루어진 군으로부터 선택된 치환기가 아니다.
Provided that at least two of R 1, R 2, R 3 and R 4 are not substituents selected from the group consisting of hydrogen and C 1 -C 10 linear or branched alkyl groups.

상기 유기화합물의 대표적인 예로는 하기 화합물 1 내지42를 들 수 있다:Representative examples of the organic compound include the following compounds 1 to 42:

Figure pat00012
Figure pat00012

Figure pat00013
Figure pat00013

Figure pat00014
Figure pat00014

Figure pat00015
Figure pat00015

Figure pat00016
Figure pat00016

Figure pat00017
Figure pat00017

Figure pat00018
Figure pat00018

Figure pat00019
Figure pat00019

Figure pat00020
Figure pat00020

Figure pat00021
Figure pat00021

Figure pat00022
Figure pat00022

Figure pat00023
Figure pat00023

Figure pat00024
Figure pat00024

Figure pat00025

Figure pat00025

본 발명의 유기화합물들은 유기전기발광소자용 재료 중 정공수송층 물질 또는 전자차단층 물질로 사용될 수 있으며, 특히, 전자차단층 물질로 바람직하게 사용될 수 있다.
The organic compounds of the present invention can be used as a hole transporting layer material or an electron blocking layer material in organic electroluminescence device materials, and can be preferably used as an electron blocking layer material in particular.

또한, 본 발명은In addition,

상기 유기화합물을 포함하는 정공수송층 또는 전자차단층형성용 재료에 관한 것이다.A hole transport layer containing the organic compound or a material for forming an electron blocking layer.

상기에서 정공수송층 또는 전자차단층형성용 재료는 상기 유기화합물을 정공수송층 또는 전자차단층을 형성하는데 사용하기 위하여 필요한 형태로 제조할 때 통상적으로 첨가되는 물질, 예컨대, 용매 등을 더 포함할 수 있다.
The hole transport layer or the material for forming an electron blocking layer may further include a material conventionally added when preparing the organic compound in a form necessary for forming a hole transporting layer or an electron blocking layer such as a solvent .

또한, 본 발명은In addition,

음극과 양극사이에 적어도 발광층을 포함하는 일층 또는 복수층으로 이루어지는 유기박막층이 협지되어있는 유기전기발광소자에 있어서, An organic electroluminescent device in which an organic thin film layer composed of one layer or a plurality of layers including at least a light emitting layer is sandwiched between a cathode and an anode,

상기 유기박막층중 적어도 1층 이상이 상기 화학식 1로 표시되는 유기화합물을 1종 단독으로 또는 2종 이상의 조합으로 함유하는 것을 특징으로 하는 유기전기발광소자에 관한 것이다. Wherein at least one of the organic thin film layers contains an organic compound represented by the above formula (1) singly or in combination of two or more kinds.

상기 유기전기발광소자에서 상기 유기화합물은 정공수송층 물질 및 전자차단층 물질 중 하나 이상으로 함유될 수 있다.In the organic electroluminescent device, the organic compound may be contained in at least one of a hole transporting layer material and an electron blocking layer material.

상기 유기전계발광소자에서 상기 유기박막층은 정공주입층, 정공수송층, 발광층, 전자수송층, 및 전자주입층을 이 순서로 포함할 수 있으며, 필요에 따라 정공수송층과 발광층 사이에 전자차단층을 더 포함할 수 있으며, 발광층과 전자수송층 사이에 정공차단층을 더 포함할 수 있다.The organic thin film layer may include a hole injecting layer, a hole transporting layer, a light emitting layer, an electron transporting layer, and an electron injecting layer in this order. If necessary, an electron blocking layer may be further included between the hole transporting layer and the light emitting layer. And may further include a hole blocking layer between the light emitting layer and the electron transporting layer.

상기 유기전계발광소자는 양극, 정공주입층, 정공수송층, 발광층, 전자수송층, 전자주입층 및 음극이 이 순서대로 적층된 구조를 가질 수 있으며, 필요에 따라 전자차단층, 정공차단층 등을 추가로 더 적층할 수 있다.
The organic electroluminescent device may have a structure in which an anode, a hole injecting layer, a hole transporting layer, a light emitting layer, an electron transporting layer, an electron injecting layer, and a cathode are stacked in this order, and an electron blocking layer, Can be further stacked.

이하에서, 본 발명의 유기전계발광소자에 대하여 예를 들어 설명한다. 그러나, 하기에 예시된 내용이 본 발명의 유기전계발광소자를 한정하는 것은 아니다.Hereinafter, the organic electroluminescent device of the present invention will be described by way of example. However, the following examples do not limit the organic electroluminescent device of the present invention.

본 발명의 유기전계발광소자는 양극(정공주입전극), 정공주입층(HIL) 및/또는 정공수송층(HTL), 발광층(EML) 및 음극(전자주입전극)이 순차적으로 적층된 구조를 가질 수 있으며, 바람직하게는, 양극과 발광층사이에 전자차단층(EBL)을, 그리고 음극과 발광층사이에 전자수송층(ETL), 전자주입층(EIL)을 추가로 포함할 수 있다. 또한 음극과 발광층사이에 정공차단층(HBL)을 더 포함할 수도 있다. The organic electroluminescent device of the present invention may have a structure in which a cathode (a hole injection electrode), a hole injection layer (HIL) and / or a hole transport layer (HTL), a light emitting layer (EML) Preferably, an electron blocking layer (EBL) may be interposed between the anode and the light emitting layer, and an electron transport layer (ETL) and an electron injection layer (EIL) may be interposed between the cathode and the light emitting layer. Further, a hole blocking layer (HBL) may be further included between the cathode and the light emitting layer.

본 발명에 따른 유기전계발광소자의 제조방법으로는, 먼저 기판표면에 양극용 물질을 통상적인 방법으로 코팅하여 양극을 형성한다. 이때, 사용되는 기판은 투명성, 표면평활성, 취급용이성 및 방수성이 우수한 유리기판 또는 투명 플라스틱기판이 바람직하다. 또한, 양극용 물질로는 투명하고 전도성이 우수한 산화인듐주석(ITO), 산화인듐아연(IZO), 산화주석(SnO2), 산화아연(ZnO) 등이 사용될 수 있다.In the method of manufacturing an organic electroluminescent device according to the present invention, a cathode material is coated on the surface of a substrate by a conventional method to form a cathode. At this time, the substrate to be used is preferably a glass substrate or a transparent plastic substrate having excellent transparency, surface smoothness, ease of handling, and waterproofness. As the material for the positive electrode, indium tin oxide (ITO), indium zinc oxide (IZO), tin oxide (SnO 2 ), zinc oxide (ZnO) and the like which are transparent and excellent in conductivity may be used.

다음으로, 상기 양극표면에 정공주입층(HIL) 물질을 통상적인 방법으로 진공열증착 또는 스핀코팅하여 정공주입층을 형성한다. 이러한 정공주입층 물질로는 구리프탈로시아닌(CuPc), 4,4',4"-트리스(3-메틸페닐아미노)트리페닐아민(m-MTDATA), 4,4',4"-트리스(3-메틸페닐아미노)페녹시벤젠(m-MTDAPB), 스타버스트(starburst)형 아민류인 4,4',4"-트리(N-카바졸릴)트리페닐아민(TCTA), 4,4',4"-트리스(N-(2-나프틸)-N-페닐아미노)-트리페닐아민(2-TNATA) 또는 이데미츠사(Idemitsu)에서 구입가능한 IDE406을 예로 들 수 있다.Next, a hole injection layer (HIL) material is formed on the surface of the anode by vacuum thermal deposition or spin coating using a conventional method. Examples of such hole injection layer materials include copper phthalocyanine (CuPc), 4,4 ', 4 "-tris (3-methylphenylamino) triphenylamine (m-MTDATA), 4,4' Amino) phenoxybenzene (m-MTDAPB), starburst type amines such as 4,4 ', 4 "-tri (N-carbazolyl) triphenylamine (TCTA), 4,4' Triphenylamine (2-TNATA) or IDE406 available from Idemitsu, for example.

상기 정공주입층 표면에 정공수송층(HTL) 물질을 통상적인 방법으로 진공열증착 또는 스핀코팅하여 정공수송층을 형성한다. 이때, 정공수송층 물질로는 본 발명의 유기화합물, 비스(N-(1-나프틸-n-페닐))벤지딘(α-NPD), N,N'-다이(나프탈렌-1-일)-N,N'-바이페닐-벤지딘(NPB) 또는 N,N'-바이페닐-N,N'-비스(3-메틸페닐)-1,1'-바이페닐-4,4'-다이아민(TPD)을 예로 들 수 있다.A hole transport layer (HTL) material is vacuum-deposited or spin coated on the surface of the hole injection layer by a conventional method to form a hole transport layer. As the hole transport layer material, organic compound of the present invention, bis (N- (1-naphthyl-n-phenyl)) benzidine (? -NPD), N, N'- (NPB) or N, N'-biphenyl-N, N'-bis (3-methylphenyl) -1,1'-biphenyl-4,4'-diamine (TPD) For example.

상기 정공수송층표면에 발광층(EML) 물질을 통상적인 방법으로 진공열증착 또는 스핀코팅하여 발광층을 형성한다. 이때, 사용되는 발광층 물질중 단독발광물질 또는 발광호스트물질은 녹색의 경우 트리스(8-하이드록시퀴놀리놀라토)알루미늄(Alq3) 등이 사용될 수 있으며, 청색의 경우 Balq(8-하이드록시퀴놀린베릴륨염), DPVBi(4,4'-비스(2,2-바이페닐에테닐)-1,1'-바이페닐)계열, 스파이로(Spiro)물질, 스파이로-DPVBi(스파이로-4,4'-비스(2,2-바이페닐에테닐)-1,1'-바이페닐), LiPBO(2-(2-벤조옥사졸릴)-페놀리튬염), 비스(바이페닐비닐)벤젠, 알루미늄-퀴놀린금속착체, 이미다졸, 티아졸 및 옥사졸의 금속착체등이 사용될 수 있다.A light emitting layer (EML) material is formed on the surface of the hole transport layer by vacuum thermal deposition or spin coating using a conventional method. In this case, tris (8-hydroxyquinolinolato) aluminum (Alq 3 ) may be used as the sole luminescent material or the luminescent host material among the luminescent layer materials used. In case of blue, Balq (8-hydroxyquinoline Beryllium salts), DPVBi (4,4'-bis (2,2-biphenylethenyl) -1,1'-biphenyl) series, Spiro material, Spiro- DPVBi (2-benzooxazolyl) -phenol lithium salt), bis (biphenylvinyl) benzene, aluminum < RTI ID = 0.0 & -Quinoline metal complex, metal complexes of imidazole, thiazole and oxazole, and the like can be used.

발광층물질중 발광호스트와 함께 사용될 수 있는 도펀트(dopant)의 경우 형광도펀트로서 이데미츠사(Idemitsu)에서 구입가능한 IDE102, IDE105, 인광도펀트로는 트리스(2-페닐피리딘)이리듐(III)(Ir(ppy)3), 이리듐(III)비스[(4,6-다이플루오로페닐)피리디나토-N,C-2']피콜린산염(FIrpic) (참조문헌[Chihaya Adachi et al., Appl. Phys. Lett., 2001, 79, 3082-3084]), 플라티늄(II)옥타에틸포르피린(PtOEP), TBE002(코비온사) 등이 사용될 수 있다.Among the light emitting layer materials, IDE102 and IDE105 available from Idemitsu as phosphorescent dopants and tris (2-phenylpyridine) iridium (III) (Ir (ppy ) 3 ), iridium (III) bis [(4,6-difluorophenyl) pyridinate-N, C-2 '] picolinate (FIrpic) (Chihaya Adachi et al., Appl. Phys Platy (II) octaethylporphyrin (PtOEP), TBE002 (Cobion), etc. may be used.

선택적으로는, 정공수송층과 발광층사이에 전자차단층(EBL)을 추가로 형성할 수 있으며, 상기 전자차단층 물질로는 본 발명의 유기화합물이 바람직하게 사용될 수 있다. Alternatively, an electron blocking layer (EBL) may be further formed between the hole transporting layer and the light emitting layer, and the organic compound of the present invention may be preferably used as the electron blocking layer material.

상기 발광층표면에 전자수송층(ETL) 물질을 통상적인 방법으로 진공열증착 또는 스핀코팅하여 전자수송층을 형성한다. 이때, 사용되는 전자수송층 물질의 경우 특별히 제한되지 않으며, 바람직하게는 트리스(8-하이드록시퀴놀리놀라토)알루미늄(Alq3)을 사용할 수 있다.An electron transport layer (ETL) material is formed on the surface of the light emitting layer by vacuum thermal deposition or spin coating using a conventional method. In this case, the electron transporting material to be used is not particularly limited, and tris (8-hydroxyquinolinolato) aluminum (Alq 3 ) can be preferably used.

선택적으로는, 발광층과 전자수송층사이에 정공차단층(HBL)을 추가로 형성하고 발광층에 인광도펀트를 함께 사용함으로써, 삼중항여기자 또는 정공이 전자수송층으로 확산되는 현상을 방지할 수 있다. Alternatively, by further forming a hole blocking layer (HBL) between the light emitting layer and the electron transporting layer and using a phosphorescent dopant together with the light emitting layer, it is possible to prevent the phenomenon that the triplet excitons or holes are diffused into the electron transporting layer.

정공차단층의 형성은 정공차단층물질을 통상적인 방법으로 진공열증착 및 스핀코팅하여 실시할 수 있으며, 정공차단층물질의 경우 특별히 제한되지는 않으나, 바람직하게는 (8-하이드록시퀴놀리놀라토)리튬(Liq), 비스(8-하이드록시-2-메틸퀴놀리놀나토)-알루미늄비페녹사이드(BAlq), 바쏘쿠프로인(bathocuproine, BCP) 및 LiF 등을 사용할 수 있다.The hole blocking layer can be formed by vacuum thermal deposition and spin coating using a hole blocking layer material in a conventional manner. In the case of the hole blocking layer material, there is no particular limitation, but (8-hydroxyquinolinolato Lithium biphenoxide (BAlq), bathocuproine (BCP), and LiF may be used as the lithium salt.

상기 전자수송층 표면에 전자주입층(EIL) 물질을 통상적인 방법으로 진공열증착 또는 스핀코팅하여 전자주입층을 형성한다. 이때, 사용되는 전자주입층 물질로는 LiF, Liq, Li2O, BaO, NaCl, CsF 등의 물질이 사용될 수 있다.An electron injection layer (EIL) material is formed on the surface of the electron transport layer by vacuum thermal deposition or spin coating using a conventional method. At this time, as the electron injection layer material to be used may be a material such as LiF, Liq, Li 2 O, BaO, NaCl, CsF.

상기 전자주입층 표면에 음극용 물질을 통상적인 방법으로 진공열증착하여 음극을 형성한다.A negative electrode is formed on the surface of the electron injecting layer by vacuum thermal deposition using a conventional method.

이때, 사용되는 음극용 물질로는 리튬(Li), 알루미늄(Al), 알루미늄-리튬(Al-Li), 칼슘(Ca), 마그네슘(Mg), 마그네슘-인듐(Mg-In), 마그네슘-은(Mg-Ag) 등이 사용될 수 있다. 또한, 전면발광유기전계발광소자의 경우 산화인듐주석(ITO) 또는 산화인듐아연(IZO)를 사용하여 빛이 투과할 수 있는 투명한 음극을 형성할 수도 있다.At this time, as the negative electrode material to be used, lithium, aluminum, aluminum-lithium, calcium, magnesium, (Mg-Ag) or the like may be used. In the case of a top emission organic electroluminescent device, indium tin oxide (ITO) or indium zinc oxide (IZO) may be used to form a transparent cathode which can transmit light.

상기 음극의 표면에는 본 발명의 캡핑층 형성용 조성물에 의해 캡핑층(CPL)이 형성될 수 있다.
A capping layer (CPL) may be formed on the surface of the cathode by the composition for forming a capping layer of the present invention.

이하에서, 상기 화합물들의 합성방법을 대표적인 예를 들어 설명한다. 그러나, 본 발명의 화합물들의 합성방법이 하기 예시된 방법으로 한정되는 것은 아니며, 본 발명의 화합물들은 하기에 예시된 방법과 이 분야의 공지의 방법에 의해 제조될 수 있다.
Hereinafter, a method of synthesizing the above compounds will be described as a representative example. However, the method of synthesizing the compounds of the present invention is not limited to the following exemplified methods, and the compounds of the present invention can be produced by the methods exemplified below and by methods known in the art.

제조예Manufacturing example 1: 화합물의 합성 1: Synthesis of Compound

중간체 A의 합성Synthesis of intermediate A

[반응식 1][Reaction Scheme 1]

Figure pat00026
Figure pat00026

질소 하에서 9H-카바졸 1.67g(10mmol)과 1-브로모-4-아이오도벤젠 3.40g(12mmol)을 니트로벤젠 25ml에 녹인 후 Cu 0.19g(3mmol), K2CO3 4.15g을 첨가하고 16시간 동안 환류하였다.(10 mmol) of 9H-carbazole and 3.40 g (12 mmol) of 1-bromo-4-iodobenzene were dissolved in 25 ml of nitrobenzene under nitrogen, and then 0.19 g ( 3 mmol) of Cu and 4.15 g of K 2 CO 3 were added And refluxed for 16 hours.

반응이 종료되면 반응물의 온도를 상온으로 식힌 다음 MeOH 75ml를 첨가하여 여과하여 고체를 얻은 후 MC 100ml에 녹여 여과하였다.After the reaction was completed, the temperature of the reaction mixture was cooled to room temperature, 75 ml of MeOH was added, and the mixture was filtered to obtain a solid, which was then dissolved in 100 ml of MC and filtered.

MC층을 감압증류 후 Hex : MC = 5 : 1로 컬럼하여 중간체 A 2.09g(65%)을 얻었다.The MC layer was distilled under reduced pressure and then subjected to column chromatography with Hex: MC = 5: 1 to obtain 2.09 g (65%) of Intermediate A.

중간체 A MS(FAB): 322(M+)
Intermediate A MS (FAB): 322 (M < + & gt ; ) [

중간체 B 합성Synthesis of intermediate B

[반응식 2][Reaction Scheme 2]

Figure pat00027
Figure pat00027

질소 하에서 4-브로모-2-아이오도-1-니트로벤젠 3.28g(10mmol)과 페닐보론산 1.22g(10mmol)을 주입하고 THF 25ml에 녹인 후, Pd(PPh3)4 0.58g(0.5mmol), 2M K2CO3 15ml(30mmol)을 첨가하여 24시간 동안 환류하였다.After 4-bromo-2-iodo-1-nitrobenzene in a nitrogen is also injected into 3.28g (10mmol) and phenylboronic acid 1.22g (10mmol) is dissolved in THF 25ml, Pd (PPh 3) 4 0.58g (0.5mmol ), 2M K 2 CO 3 15 ml (30 mmol) was added and the mixture was refluxed for 24 hours.

반응이 종료되면 반응물의 온도를 상온으로 식힌 다음 MC 200ml, H2O 200ml를 첨가하여 MC층을 추출하고, 유기층을 감압증류 후 Hex : MC = 5 : 1로 컬럼하여 중간체 B 1.97g(71%)을 얻었다.After the reaction was completed, the reaction mixture was cooled to room temperature, and 200 ml of MC and 200 ml of H 2 O were added to extract the MC layer. The organic layer was distilled under reduced pressure and then 1.97 g (71% ).

중간체 B MS(FAB): 278(M+)
Intermediate B MS (FAB): 278 (M < + & gt ; ).

중간체 C의 합성Synthesis of intermediate C

[반응식 3][Reaction Scheme 3]

Figure pat00028
Figure pat00028

질소 하에서 중간체 B 2.78g(10mmol)을 o-디클로로벤젠 20ml에 녹인 후 트리페닐포스핀 6.56g(25mmol)을 첨가하고 환류하였다.2.78 g (10 mmol) of Intermediate B was dissolved in 20 ml of o-dichlorobenzene under nitrogen, 6.56 g (25 mmol) of triphenylphosphine was added and the mixture was refluxed.

반응 완결 후 MC 200ml, H2O 200ml를 첨가하여 MC층을 추출한 후 무수 MgSO4로 건조하고 농축한 후 Hex : MC = 5 : 1로 컬럼하여 중간체 C 1.94g(79%)을 얻었다.After completion of the reaction, 200 ml of MC and 200 ml of H 2 O were added to extract the MC layer, and the mixture was dried with anhydrous MgSO 4 and concentrated. Hex: MC = 5: 1 column to obtain 1.94 g (79%) of intermediate C.

중간체 C MS(FAB): 246(M+)
Intermediate C MS (FAB): 246 (M < + & gt ; ).

중간체 D의 합성Synthesis of intermediate D

[반응식 4][Reaction Scheme 4]

Figure pat00029
Figure pat00029

질소 하에서 중간체 C 2.46g(10mmol)과 아이오도벤젠 3.06g(15mmol)을 니트로벤젠 25ml에 녹인 후, K2CO3 4.15g(30mmol)과 Cu 0.19g(3mmol)를 첨가하고 16시간 동안 환류하였다.Under nitrogen, 2.46 g (10 mmol) of intermediate C and 3.06 g (15 mmol) of iodobenzene were dissolved in 25 ml of nitrobenzene, and then K 2 CO 3 4.15 g (30 mmol) of Cu and 0.19 g (3 mmol) of Cu were added and refluxed for 16 hours.

반응이 완료되면 증류를 통해 니트로벤젠을 제거하고 MC 200ml, H2O 200ml를 첨가하여 MC층을 추출한 후 무수 MgSO4로 건조하고 농축한 후 Hex : MC = 5 : 1로 컬럼하여 중간체 D 2.61g(81%)을 얻었다.After the completion of the reaction, the nitrobenzene was removed by distillation, and 200 ml of MC and 200 ml of H 2 O were added to extract the MC layer, followed by drying with anhydrous MgSO 4 and concentration. The product was then subjected to column chromatography with Hex: MC = 5: (81%).

중간체 D MS(FAB): 322(M+)
Intermediate D MS (FAB): 322 (M <+> ) <

중간체 E의 합성Synthesis of intermediate E

[반응식 5][Reaction Scheme 5]

Figure pat00030
Figure pat00030

질소 하에서 중간체 D 2.46g(10mmol)을 무수 THF 15ml에 녹이고, 반응물의 온도를 -78 ℃로 낮추고, 2.5M n-BuLi 4ml를 천천히 적가하고 난 후, 반응물을 0 ℃에서 1시간동안 교반시켰다. 이후, 반응물의 온도를 -78 ℃로 낮추고 트리메틸보레이트 12.47g(12mmol)을 적가하고 난 후 상온에서 12시간동안 교반시켰다. Under nitrogen, 2.46 g (10 mmol) of Intermediate D were dissolved in 15 ml of anhydrous THF, the temperature of the reaction was lowered to -78 ° C, 4 ml of 2.5 M n-BuLi was slowly added dropwise and the reaction was stirred at 0 ° C for 1 hour. Then, the temperature of the reactant was lowered to -78 ° C, 12.47 g (12 mmol) of trimethylborate was added dropwise, and the mixture was stirred at room temperature for 12 hours.

반응이 종료되면 반응물의 온도를 상온으로 식힌 다음 MC 200ml, H2O 200ml를 첨가하여 MC층을 추출하고, 유기층을 감압증류 후 Hex/MC으로 재결정하여 중간체 E 2.15g(75%)을 얻었다.After completion of the reaction, the reaction mixture was cooled to room temperature, and 200 ml of MC and 200 ml of H 2 O were added thereto to extract the MC layer. The organic layer was distilled under reduced pressure and recrystallized with Hex / MC to obtain 2.15 g (75%) of intermediate E.

중간체 E MS(FAB): 287(M+)
Intermediate E MS (FAB): 287 (M <+> ) <

중간체 F의 합성Synthesis of intermediate F

[반응식 6][Reaction Scheme 6]

Figure pat00031
Figure pat00031

질소 하에서 중간체 E 2.87g(10mmol)과 1-브로모-4-아이오도벤젠 2.83g(10mmol)을 주입하고 THF 30ml에 녹인 후 Pd(PPh3)4 0.58g(0.5mmol)과 2M K2CO3 15ml(30mmol)를 각각 넣은 다음 24시간동안 환류하였다.After injection of intermediate E 2.87g (10mmol) and 1-bromo-4-iodo-benzene 2.83g (10mmol) under nitrogen and dissolved in THF 30ml Pd (PPh 3) 4 0.58g (0.5mmol) and 2M K 2 CO 3 (30 mmol) were added, respectively, and the mixture was refluxed for 24 hours.

반응이 종료되면 반응물의 온도를 상온으로 식히고, MC 200ml, H2O 200ml를 첨가하여 MC층을 추출한 후 무수 MgSO4로 건조하고 농축한 후 Hex : MC = 5 : 1로 컬럼하여 중간체 F 2.95g(74%)을 얻었다.After the completion of the reaction, the reaction mixture was cooled to room temperature, 200 ml of MC and 200 ml of H 2 O were added to extract the MC layer, and the mixture was dried over anhydrous MgSO 4 and concentrated. The product was then fractionated by Hex: MC = 5: (74%).

중간체 F MS(FAB): 398(M+)
Intermediate F MS (FAB): 398 (M <+> ) <

중간체 G의 합성Synthesis of intermediate G

[반응식 7][Reaction Scheme 7]

Figure pat00032
Figure pat00032

질소 하에서 m,m'-디톨일아민 1.97g(10mmol)과 1-플루오로-4-니트로벤젠 1.41g(10mmol)을 DMF 15ml에 녹인 후 K2CO3 0.83g(6mmol)을 첨가하여 24시간 동안 환류하였다.Under nitrogen m, m'- di-tolyl amine 1.97g (10mmol) and 1-fluoro-4-nitrobenzene 24 hours, was dissolved 1.41g (10mmol) in 15ml DMF was added K 2 CO 3 0.83g (6mmol) Lt; / RTI &gt;

반응이 종료되면 반응물의 온도를 상온으로 식힌 다음 H2O 50ml를 첨가하여 생성된 고체를 여과 후 건조하였다. 건조된 생성물을 Hex : MC = 2 : 1로 컬럼하여 중간체 G 1.94g(61%)을 얻었다.After completion of the reaction, the reaction mixture was cooled to room temperature, and 50 ml of H 2 O was added thereto. The resulting solid was filtered and dried. The dried product was subjected to column chromatography with Hex: MC = 2: 1 to obtain 1.94 g (61%) of Intermediate Compound G.

중간체 G MS(FAB): 318(M+)
Intermediate G MS (FAB): 318 (M &lt; + & gt ; ) [

중간체 H의 합성Synthesis of Intermediate H

[반응식 8][Reaction Scheme 8]

Figure pat00033
Figure pat00033

아르곤 하에서 중간체 G 3.18g(10mmol)을 THF?tOH(50 mL/15 mL)에 녹인다. 상기 용액에 EtOH 1ml에 녹인 palladium on carbon(10%, 0.4g)을 넣는다. 30분후 상기 혼합용액에 2.4bar의 H2를 넣어주고 16h 동안 환류하였다. Under argon, 3.18 g (10 mmol) of Intermediate G are dissolved in THF-tOH (50 mL / 15 mL). To this solution is added palladium on carbon (10%, 0.4 g) dissolved in 1 ml of EtOH. After 30 minutes, 2.4 bar of H 2 was added to the mixed solution, and the mixture was refluxed for 16 hours.

반응 완결 후 셀라이트로 필터하여 추출하고, 유기층을 감압증류 후 중간체 H 2.82g(98%)을 얻었다.After the completion of the reaction, the reaction mixture was filtered through celite and extracted. The organic layer was distilled under reduced pressure to obtain 2.82 g (98%) of Intermediate H.

중간체 H MS(FAB): 288(M+)
Intermediate H MS (FAB): 288 (M <+> )

중간체 I의 합성Synthesis of Intermediate I

[반응식 9][Reaction Scheme 9]

Figure pat00034
Figure pat00034

질소 하에서 중간체 A 3.22g(10mmol)과 중간체 H 2.88g(10mmol)을 주입하여 녹인 후, Pd2dba3 0.18g(0.2mmol), 1M t-Bu3P 0.4ml(0.4mmol), t-BuONa 2.88g(30mmol)을 각각 넣은 다음 6시간 동안 환류하였다.(0.2 mmol) of Pd 2 dba 3 , 0.4 ml (0.4 mmol) of 1 M t-Bu 3 P, and 0.28 g (0.1 mmol) of t-BuONa And then refluxed for 6 hours.

반응이 종료되면 반응물의 온도를 상온으로 식힌 다음 MC 200ml와 H2O 200ml를 첨가하여 MC층을 추출하고, 유기층을 감압증류 후 Hex : MC = 5 : 1로 컬럼하여 중간체 I 3.23g(61%)을 얻었다.After the reaction was completed, the reaction mixture was cooled to room temperature, and 200 ml of MC and 200 ml of H 2 O were added to extract the MC layer. The organic layer was distilled under reduced pressure and then 3.23 g (61% ).

중간체 I MS(FAB): 529(M+)
Intermediate I MS (FAB): 529 (M &lt; + & gt ; ) [

중간체 J의 합성Synthesis of intermediate J

[반응식 10][Reaction Scheme 10]

Figure pat00035
Figure pat00035

질소 하에서 4-브로모-N-페닐아닐린 2.4g(10mmol), 티안트렌-1-일보론산(thianthren-1-ylboronic acid) 2.6g(10mmol)을 톨루엔 50ml에 녹인 후 Pd(PPh3)4 0.5g(0.5mmol), 2M K2CO3 15ml(30mmol)을 첨가하여 15시간 동안 환류하였다.After a nitrogen dissolved -N- phenyl-4-bromo-aniline 2.4g (10mmol), thianthrene-1-Daily acid (thianthren-1-ylboronic acid) 2.6g (10mmol) in toluene 50ml Pd (PPh 3) 4 0.5 g (0.5 mmol), 2M K 2 CO 3 15 ml (30 mmol) was added and the mixture was refluxed for 15 hours.

반응이 종료되면 반응물의 온도를 상온으로 식힌 다음 MC 200ml와 H2O 200ml를 첨가하여 MC층을 추출하고, 유기층을 감압증류 후 Hex : MC = 5 : 1로 컬럼하여 중간체 J 2.60g(68%)을 얻었다.When the reaction is completed, the temperature of the reaction product is cooled to room temperature, 200 ml of H 2 O and 200 ml of H 2 O were added thereto to extract the MC layer. The organic layer was distilled under reduced pressure and then subjected to column chromatography with Hex: MC = 5: 1 to obtain 2.60 g (68%) of Intermediate J.

중간체 J MS(FAB): 383(M+)
Intermediate J MS (FAB): 383 (M <+> ) <

중간체 K의 합성Synthesis of Intermediate K

[반응식 11][Reaction Scheme 11]

Figure pat00036
Figure pat00036

질소 하에서 4-브로모아닐린 1.7g(10mmol), 티안트렌-1-일보론산(thianthren-1-ylboronic acid0 2.6g(10mmol)을 톨루엔 30ml에 녹인 후 Pd(PPh3)4 0.5g(0.5mmol), 2M K2CO3 25ml(50mmol)을 첨가하여 15시간 동안 환류하였다.After a nitrogen dissolved 4-bromoaniline 1.7g (10mmol), thianthrene-1-Daily acid (thianthren-1-ylboronic acid0 2.6g (10mmol) in toluene 30ml Pd (PPh 3) 4 0.5g (0.5mmol) , 2M K 2 CO 3 25 ml (50 mmol) was added and the mixture was refluxed for 15 hours.

반응이 종료되면 반응물의 온도를 상온으로 식힌 다음 MC 200ml와 H2O 200ml를 첨가하여 MC층을 추출하고, 유기층을 감압증류 후 Hex : MC = 5 : 1로 컬럼하여 중간체 K 2.39g(78%)을 얻었다.After the reaction was completed, the reaction mixture was cooled to room temperature, and 200 ml of MC and 200 ml of H 2 O were added to extract the MC layer. The organic layer was distilled under reduced pressure and then 2.34 g (78% ).

중간체 K MS(FAB): 307(M+)
Intermediate K MS (FAB): 307 (M <+> )

중간체 L의 합성Synthesis of Intermediate L

[반응식 12][Reaction Scheme 12]

Figure pat00037
Figure pat00037

질소 하에서 중간체 K 3.0g(10mmol), 4-브로모디벤조[b,d]티오펜 2.6g(10mmol)을 톨루엔 30ml에 녹인 후 Pd2dba3 0.4g(0.5mmol), t-Bu3P 0.2g(1mmol), t-BuONa 2.8g(30mmol)을 첨가 후 6시간 동안 환류하였다.3.0 g (10 mmol) of Intermediate K and 2.6 g (10 mmol) of 4-bromodibenzo [b, d] thiophene were dissolved in 30 ml of toluene under nitrogen, and Pd 2 dba 3 0.2 g (1 mmol) of t-Bu 3 P and 2.8 g (30 mmol) of t-BuONa were added, and the mixture was refluxed for 6 hours.

반응이 종료되면 반응물의 온도를 상온으로 식힌 다음 MC 200ml와 H2O 200ml를 첨가하여 MC층을 추출하고, 유기층을 감압증류 후 Hex : MC = 3 : 1로 컬럼하여 중간체 L 3.96g(81%)을 얻었다.After the reaction was completed, the reaction mixture was cooled to room temperature, and then 200 ml of MC and 200 ml of H 2 O were added to extract the MC layer. The organic layer was distilled under reduced pressure and then 3.97 g (81% ).

중간체 L MS(FAB): 489(M+)
Intermediate L MS (FAB): 489 (M <+> )

화합물 [5]의 합성Synthesis of compound [5]

[[ 반응식13Scheme 13 ]]

Figure pat00038
Figure pat00038

질소 하에서 중간체 I 5.30g(10mmol), 중간체 F 3.98g(10mmol)을 톨루엔 50ml에 녹인 후 Pa(OAC)2 0.11g(0.5mmol), BINAP 1.25g(2mmol), t-BuONa 2.88g(30mmol)을 첨가 후 6시간 동안 환류하였다.(OAC) 2 , 1.25 g ( 2 mmol) of BINAP and 2.88 g (30 mmol) of t-BuONa were dissolved in 50 ml of toluene after 5.30 g (10 mmole) of Intermediate I and 3.98 g And the mixture was refluxed for 6 hours.

반응이 종료되면 반응물의 온도를 상온으로 식힌 다음 MC 300ml와 H2O 300ml를 첨가하여 MC층을 추출하고, 유기층을 감압증류 후 Hex : MC = 3 : 1로 컬럼하여 화합물 5 6.35g(75%)을 얻었다.After the reaction was completed, the reaction mixture was cooled to room temperature, and 300 ml of MC and 300 ml of H 2 O were added thereto to extract the MC layer. The organic layer was distilled under reduced pressure, and 6.35 g (75% ).

1H NMR (DMSO-d, 300Hz): δ(ppm)= 7.7-7.3(m, 14H), 7.25-6.3(m, 26H), 2.35(s, 6H) 1 H NMR (DMSO-d, 300Hz): δ (ppm) = 7.7-7.3 (m, 14H), 7.25-6.3 (m, 26H), 2.35 (s, 6H)

MS(FAB): 847(M+)
MS (FAB): 847 (M &lt; + & gt ; ).

화합물 [31]의 합성Synthesis of Compound [31]

[[ 반응식14Scheme 14 ]]

Figure pat00039
Figure pat00039

질소 하에서 중간체 J 8.44g(22mmol), 1,4-디아이오도벤젠 3.30g(10mmol)을 톨루엔 60ml에 녹인 후 Pd(OAc)2 0.10g(0.4mmol), t-Bu3P 0.32g(1.6mmol), t-BuONa 5.76g(60mmol)을 첨가 후 6시간 동안 환류하였다.After a nitrogen dissolved Intermediate J 8.44g (22mmol), 1,4- DI Goto benzene 3.30g (10mmol) in toluene 60ml Pd (OAc) 2 0.10g ( 0.4mmol), t-Bu 3 P 0.32g (1.6mmol ), t-BuONa (5.76 g, 60 mmol) was added, and the mixture was refluxed for 6 hours.

반응 완결 후 MC 300ml, H2O 300ml를 첨가하여 MC층을 추출하고, 유기층을 감압증류 후 Hex : MC = 2 : 1로 컬럼하여 화합물 31 6.56g(78%)을 얻었다.After completion of the reaction, 300 ml of MC and 300 ml of H 2 O were added to extract the MC layer. The organic layer was distilled under reduced pressure and then subjected to column chromatography with Hex: MC = 2: 1 to obtain 6.56 g (78%) of Compound 31.

1H NMR (CDCl3, 300Hz): δ(ppm)= 7.55-7.47(m, 4H), 7.46-7.41(d, 2H), 7.37-7.13(m, 28H), 7.11-7.04(m, 2H) 1 H NMR (CDCl3, 300Hz) : δ (ppm) = 7.55-7.47 (m, 4H), 7.46-7.41 (d, 2H), 7.37-7.13 (m, 28H), 7.11-7.04 (m, 2H)

MS(FAB): 841(M+)
MS (FAB): 841 (M &lt; + & gt ; ).

화합물 [35]의 합성Synthesis of Compound [35]

[반응식 15][Reaction Scheme 15]

Figure pat00040
Figure pat00040

질소 하에서 중간체 L 8.6g(20mmol), 1,4-디아이오도벤젠 3.30g(10mmol)을 톨루엔 50ml에 녹인 후 Pd(OAc)2 0.10g(0.4mmol), t-Bu3P 0.32g(1.6mmol), t-BuONa 5.76g(60mmol)을 첨가 후 6시간 동안 환류하였다.After a nitrogen dissolved Intermediate L 8.6g (20mmol), 1,4- DI Goto benzene 3.30g (10mmol) in toluene 50ml Pd (OAc) 2 0.10g ( 0.4mmol), t-Bu 3 P 0.32g (1.6mmol ), t-BuONa (5.76 g, 60 mmol) was added, and the mixture was refluxed for 6 hours.

반응 완결 후 MC 300ml, H2O 300ml를 첨가하여 MC층을 추출하고, 유기층을 감압증류 후 Hex: MC = 2 : 1로 컬럼하여 화합물 35 7.48g(71%)을 얻었다.After the completion of the reaction, 300 ml of MC and 300 ml of H 2 O were added to extract the MC layer. The organic layer was distilled under reduced pressure and then column was subjected to Hex: MC = 2: 1 to obtain 7.48 g (71%) of Compound 35.

1H NMR (CDCl3, 300Hz): δ(ppm)= 8.21-8.14 (m, 2 H), 8.07-8.00(m, 2 H), 7.82-7.74(m, 2 H), 7.55-7.35(m, 14H), 7.32-7.10(m, 20H) 1 H NMR (CDCl3, 300Hz) : δ (ppm) = 8.21-8.14 (m, 2 H), 8.07-8.00 (m, 2 H), 7.82-7.74 (m, 2 H), 7.55-7.35 (m, 14H), 7.32-7. 10 (m, 20H)

MS(FAB): 1053(M+)
MS (FAB): 1053 (M &lt; + & gt ; ).

이하에서, 실시예를 통하여 본 발명을 보다 상세히 설명한다. 그러나, 하기의 실시예는 본 발명을 더욱 구체적으로 설명하기 위한 것으로서, 본 발명의 범위가 하기의 실시예에 의하여 한정되는 것은 아니다. 하기의 실시예는 본 발명의 범위 내에서 당업자에 의해 적절히 수정, 변경될 수 있다.
Hereinafter, the present invention will be described in more detail by way of examples. However, the following examples are intended to further illustrate the present invention, and the scope of the present invention is not limited by the following examples. The following examples can be appropriately modified and changed by those skilled in the art within the scope of the present invention.

실시예Example 1~12:  1 to 12: 유기전계발광소자의The organic electroluminescent device 제조 Produce

반사층이 형성된 기판 위에 ITO로 양극을 형성하고, N2플라즈마 또는 UV-Ozone으로 표면처리 하였다. 그 위에 정공주입층(HIL)으로 HAT-CN을 100 Å의 두께로 증착시켰다. 이어서 상기 정공주입층 상부에, NPD를 진공 증착하여 800 Å 두께의 정공수송층을 형성하였다. 상기 정공수송층 상부에 하기 표 1에 기재된 본 발명의 화합물들을 진공 증착하여 전자차단층(EBL)을 150 Å 두께로 형성하고, 상기 전자차단층(EBL) 상부에 발광층(EML)으로 블루 EML을 형성할 수 있는 9,10-비스(2-나프틸)안트라센(ADN)을 증착 시키면서 도판트로 2,5,8,11-테트라부틸-페릴렌(t-Bu-Perylene)을 약 5%정도 도핑하여 250 Å의 발광층을 형성하였다. 그 위에 안트라센 유도체와 LiQ를 1:1의 중량비로 혼합하여 300 Å의 두께로 전자수송층(ETL)을 증착하였으며, 그 위에 전자주입층(EIL)으로 LiQ를 100 Å의 두께로 증착시켰다. 그 후, 음극으로 마그네슘(Mg)과 은(Ag)을 9:1 비율로 150 Å의 두께로 증착시켰다. 상기 음극 위에 캡핑층으로 DNTPD (N4,N4′-Bis[4-[bis(3-methylphenyl)amino]phenyl]-N4,N4′-diphenyl-[1,1′-biphenyl]-4,4′-diamine)을 65nm 두께로 증착시켰다. 상기 캡핑층(CPL) 위에 UV 경화형 접착제로 흡습제가 함유된 씰 캡(seal cap)을 합착하여 대기중의 O2나 수분으로부터 유기전계발광소자를 보호할 수 있게 하여 유기전계발광소자를 제조하였다.An anode was formed of ITO on the substrate on which the reflective layer was formed, and was surface-treated with N 2 plasma or UV-Ozone. HAT-CN was deposited thereon with a hole injection layer (HIL) to a thickness of 100 ANGSTROM. Subsequently, NPD was vacuum deposited on the hole injection layer to form a hole transport layer having a thickness of 800 Å. The electron blocking layer (EBL) was formed to a thickness of 150 Å on the hole transport layer by vacuum evaporation of the compounds of the present invention as shown in Table 1 below. Blue EML was formed on the electron blocking layer (EBL) 2,5,8,11-tetrabutyl-perylene was doped with about 5% by doping with 9,10-bis (2-naphthyl) anthracene (ADN) 250 &lt; / RTI &gt; An electron transport layer (ETL) was deposited to a thickness of 300 Å by mixing an anthracene derivative and LiQ at a weight ratio of 1: 1, and LiQ was deposited thereon as an electron injection layer (EIL) to a thickness of 100 Å. Thereafter, magnesium (Mg) and silver (Ag) were deposited as a negative electrode at a ratio of 9: 1 at a thickness of 150 ANGSTROM. (4-bis (3-methylphenyl) amino] phenyl] -N4, N4'-diphenyl- [1,1'-biphenyl] -4,4'- diamine was deposited to a thickness of 65 nm. A seal cap containing a moisture absorbent with a UV curable adhesive was attached to the capping layer (CPL) to protect the organic electroluminescent device from O 2 or moisture in the air, thereby manufacturing an organic electroluminescent device.

Figure pat00041

Figure pat00041

비교예Comparative Example 1:  One: 유기전계발광소자의The organic electroluminescent device 제조 Produce

상기 실시예 1에서 전자차단층 물질로서 본 발명의 유기화합물 대신 TCTA를 사용한 것을 제외하고는 실시예 1과 동일하게 유기전계발광소자를 제조하였다.
An organic electroluminescent device was prepared in the same manner as in Example 1, except that TCTA was used instead of the organic compound of the present invention as the electron blocking layer material in Example 1.

시험예Test Example . . 유기전계발광소자의The organic electroluminescent device 특성 평가 Character rating

상기 실시예에서 제조한 유기전계발광소자 1 내지 2 및 비교예 1에서 제조한 유기전계발광소자의 특성을 전류 밀도 10mA/cm2에서 측정하였으며, 결과를 하기 표 1에 나타내었다.The characteristics of the organic electroluminescent devices manufactured in the above-described Examples 1 to 2 and Comparative Example 1 were measured at a current density of 10 mA / cm 2 , and the results are shown in Table 1 below.

EBL EBL Current Density
(mA/cm2)
Current Density
(mA / cm 2 )
Voltage
(V)
Voltage
(V)
Efficiency
(Cd/A)
Efficiency
(Cd / A)
CIE (X Y) CIE (X Y)
비교예Comparative Example TCTATCTA 10 10 3.6 3.6 6.5 6.5 (0.150 0.090) (0.150 0.090) 실시예 1 Example 1 화합물2 Compound 2 10 10 3.9 3.9 10.0 10.0 (0.150 0.091) (0.150 0.091) 실시예 2 Example 2 화합물 3 Compound 3 10 10 3.9 3.9 9.8 9.8 (0.150 0.088) (0.150 0.088) 실시예 3Example 3 화합물 5Compound 5 1010 4.04.0 10.010.0 (0.151 0.089)(0.151 0.089) 실시예 4 Example 4 화합물 7 Compound 7 10 10 4.0 4.0 9.9 9.9 (0.151 0.090) (0.151 0.090) 실시예 5 Example 5 화합물 10 Compound 10 10 10 3.9 3.9 10.1 10.1 (0.152 0.092) (0.152 0.092) 실시예 6 Example 6 화합물 14 Compound 14 10 10 4.1 4.1 10.1 10.1 (0.151 0.091) (0.151 0.091) 실시예 7 Example 7 화합물 17 Compound 17 10 10 3.9 3.9 9.8 9.8 (0.152 0.090) (0.152 0.090) 실시예 8 Example 8 화합물 22 Compound 22 10 10 4.0 4.0 9.6 9.6 (0.151 0.089) (0.151 0.089) 실시예 9 Example 9 화합물 27 Compound 27 10 10 3.9 3.9 9.9 9.9 (0.152 0.091) (0.152 0.091) 실시예10Example 10 화합물 29 Compound 29 10 10 3.85 3.85 10.0 10.0 (0.150 0.093) (0.150 0.093) 실시예11Example 11 화합물 31Compound 31 10 10 3.913.91 10.510.5 (0.150 0.093) (0.150 0.093) 실시예12Example 12 화합물 35Compound 35 10 10 3.953.95 10.910.9 (0.150 0.093) (0.150 0.093)

Claims (10)

하기 화학식 1로 표시되는 유기화합물:
[화학식 1]
Figure pat00042

상기 식에서
R1, R2, R3 및 R4는, 각각 독립적으로,
수소, C1~C10의 직쇄 또는 분지쇄알킬, C1~C10의 알콕시, 할로겐, CN, CF3, 또는 Si(CH3)3이거나;
C1~C10의 직쇄 또는 분지쇄알킬, C1~C10의 알콕시, 할로겐, CN, CF3, Si(CH3)3, 피리딜, 페닐, 나프틸기로 치환된 페닐, 바이페닐, 나프틸기, 디벤조티오펜, 및 티안트레닐기(thianthrenyl)로 이루어진 군으로부터 선택되는 하나 이상으로 치환 또는 비치환된 페닐, 나프틸, 페난트레닐, 플루오레닐, 피롤, 피라졸, 이미다졸, 트리아졸, 옥사졸, 옥사디아졸, 티오페닐, 티아졸, 티아디아졸, 피라지닐, 피리다지닐, 피리디닐, 피리미디닐, 트리아지닐, 디벤조퓨라닐, 디벤조티오펜, 카바졸, 또는 티안트레닐기(thianthrenyl)기이거나;
결합된 페닐기와 함께 디벤조티오펜기를 형성할 수 있으며;
단, 상기 R1, R2, R3 및 R4 중 둘 이상은 수소, C1~C10의 직쇄 또는 분지쇄알킬, C1~C10의 알콕시, 할로겐, CN, CF3, 및 Si(CH3)3로 이루어진 군으로부터 선택된 치환기가 아니다.
An organic compound represented by the following formula (1):
[Chemical Formula 1]
Figure pat00042

In the above formula
R1, R2, R3 and R4 are each, independently,
Hydrogen, linear or branched C1 ~ C10 alkyl, alkoxy, halogen of C1 ~ C10, CN, CF 3, or Si (CH 3) 3, or;
A C1 ~ C10 linear or branched alkyl, alkoxy of C1 ~ C10, halogen, CN, CF 3, Si ( CH 3) 3, pyridyl, phenyl, naphthyl group substituted phenyl, a biphenyl, a naphthyl group, a dibenzo Thiophene, and thianthrenyl, which is unsubstituted or substituted with one or more substituents selected from the group consisting of phenyl, naphthyl, phenanthrenyl, fluorenyl, pyrrole, pyrazole, imidazole, triazole, oxazole , Oxadiazole, thiophenyl, thiazole, thiadiazole, pyrazinyl, pyridazinyl, pyridinyl, pyrimidinyl, triazinyl, dibenzofuranyl, dibenzothiophene, carbazole, or thianthrenyl group thianthrenyl group;
Together with the attached phenyl group, may form a dibenzothiophene group;
However, the R1, R2, two or more of R3 and R4 from hydrogen, the group consisting of C1 ~ C10 linear or branched alkyl, alkoxy of C1 ~ C10, halogen, CN, CF 3, and Si (CH 3) 3 Lt; / RTI &gt;
청구항 1에 있어서,
R1, R2, R3 및 R4는, 각각 독립적으로,
수소, C1~C10의 직쇄 또는 분지쇄알킬, C1~C10의 알콕시, 할로겐, CN, CF3, 또는 Si(CH3)3이거나;
하기 치환기로부터 선택되거나;
Figure pat00043

Figure pat00044

Figure pat00045

Figure pat00046

Figure pat00047

Figure pat00048

Figure pat00049

Figure pat00050

Figure pat00051

결합된 페닐기와 함께 디벤조티오펜기를 형성할 수 있으며;
단, 상기 R1, R2, R3 및 R4 중 둘 이상은 수소, C1~C10의 직쇄 또는 분지쇄알킬, C1~C10의 알콕시, 할로겐, CN, CF3, 및 Si(CH3)3로 이루어진 군으로부터 선택된 치환기가 아닌 것을 특징으로 하는 유기화합물.
The method according to claim 1,
R1, R2, R3 and R4 are each, independently,
Hydrogen, linear or branched C1 ~ C10 alkyl, alkoxy, halogen of C1 ~ C10, CN, CF 3, or Si (CH 3) 3, or;
Lt; / RTI &gt;
Figure pat00043

Figure pat00044

Figure pat00045

Figure pat00046

Figure pat00047

Figure pat00048

Figure pat00049

Figure pat00050

Figure pat00051

Together with the attached phenyl group, may form a dibenzothiophene group;
However, the R1, R2, two or more of R3 and R4 from hydrogen, the group consisting of C1 ~ C10 linear or branched alkyl, alkoxy of C1 ~ C10, halogen, CN, CF 3, and Si (CH 3) 3 Lt; / RTI &gt; is not a selected substituent.
청구항 1에 있어서,
R1, R2, R3 및 R4는, 각각 독립적으로,
수소 또는 C1~C10의 직쇄 또는 분지쇄알킬기이거나;
페닐, 디벤조티오펜, 및 티안트레닐기(thianthrenyl)로 이루어진 군으로부터 선택되는 하나 이상으로 치환 또는 비치환된 페닐, 나프틸, 페난트레닐, 디벤조퓨라닐, 디벤조티오펜, 카바졸, 또는 티안트레닐기(thianthrenyl)기이거나;
결합된 페닐기와 함께 디벤조티오펜기를 형성할 수 있으며;
단, 상기 R1, R2, R3 및 R4 중 둘 이상은 수소 및 C1~C10의 직쇄 및 분지쇄알킬기로 이루어진 군으로부터 선택된 치환기가 아닌 것을 특징으로 하는 유기화합물.
The method according to claim 1,
R1, R2, R3 and R4 are each, independently,
Hydrogen or a C1 to C10 linear or branched alkyl group;
Phenyl, naphthyl, phenanthrenyl, dibenzofuranyl, dibenzothiophene, carbazole, dibenzothiophene, dibenzothiophene, and thianthrenyl. Or a thianthrenyl group;
Together with the attached phenyl group, may form a dibenzothiophene group;
Provided that at least two of said R1, R2, R3 and R4 are not substituents selected from the group consisting of hydrogen and C1-C10 straight-chain and branched-chain alkyl groups.
청구항3에 있어서,
상기 유기화합물은 하기 화합물 1 내지 42 중의 어느 하나인 것을 특징으로 하는 유기화합물:
Figure pat00052

Figure pat00053

Figure pat00054

Figure pat00055

Figure pat00056

Figure pat00057

Figure pat00058

Figure pat00059

Figure pat00060

Figure pat00061

Figure pat00062

Figure pat00063

Figure pat00064

Figure pat00065
The method of claim 3,
Wherein the organic compound is any one of the following compounds 1 to 42:
Figure pat00052

Figure pat00053

Figure pat00054

Figure pat00055

Figure pat00056

Figure pat00057

Figure pat00058

Figure pat00059

Figure pat00060

Figure pat00061

Figure pat00062

Figure pat00063

Figure pat00064

Figure pat00065
청구항 1에 있어서,
상기 유기화합물은 유기전기발광소자용 재료중 전자수송층 또는 전자차단층 물질로 사용되는 것을 특징으로 하는 유기화합물.
The method according to claim 1,
Wherein the organic compound is used as an electron transporting layer or an electron blocking layer material in an organic electroluminescence device.
청구항 1의 화합물을 포함하는 정공수송층 형성용 재료.A hole transporting layer-forming material comprising the compound of claim 1. 청구항 1의 화합물을 포함하는 전자차단층 형성용 재료. An electron blocking layer-forming material comprising the compound of claim 1. 음극과 양극사이에 적어도 발광층을 포함하는 일층 또는 복수층으로 이루어지는 유기박막층이 협지되어있는 유기전기발광소자에 있어서,
상기 유기박막층중 적어도 1층 이상이 청구항 1의 유기화합물을 1종 단독으로 또는 2종 이상의 조합으로 함유하는 것을 특징으로 하는 유기전기발광소자.
An organic electroluminescent device in which an organic thin film layer composed of one layer or a plurality of layers including at least a light emitting layer is sandwiched between a cathode and an anode,
Wherein at least one of the organic thin film layers contains the organic compound of claim 1 singly or in combination of two or more kinds.
청구항 8에 있어서,
상기 청구항 1의 유기화합물이 정공수송층 또는 전자차단층 물질로 함유되는 것을 특징으로 하는 유기전기발광소자.
The method of claim 8,
Wherein the organic compound of claim 1 is contained as a hole transporting layer or an electron blocking layer material.
청구항 8 또는 청구항9 중의 어느 한 항에 있어서,
상기 유기전기발광소자가 양극, 정공주입층, 정공수송층, 전자차단층, 발광층, 전자수송층, 전자주입층 및 음극이 이 순서대로 적층된 구조를 갖는 것을 특징으로 하는 유기전기발광소자.
The method according to any one of claims 8 and 9,
Wherein the organic electroluminescent device has a structure in which an anode, a hole injecting layer, a hole transporting layer, an electron blocking layer, a light emitting layer, an electron transporting layer, an electron injecting layer, and a cathode are stacked in this order.
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