KR20150094143A - Solar cell and method of manufacturing the same - Google Patents

Abstract

The present invention relates to a solar cell and a manufacturing method thereof, the solar cell which include a first electrode and a second electrode facing each other, and an active layer placed between the first electrode and the second electrode wherein the active layer includes a light scattering body having a plurality of hollow holes and comprising a crystalline oxide semiconductor, a photoelectrode having a plurality of nanobodies stretched from the light scattering body, and a light absorbent placed on a surface of the photoelectrode.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a solar cell,

A solar cell and a manufacturing method thereof.

The solar cell is a photoelectric conversion device that converts solar energy into electric energy, and is attracting attention as a next-generation energy resource with no pollution.

When a solar cell absorbs solar energy in a photoactive layer, an electron-hole pair (EHP) is generated inside the semiconductor, and the generated electrons and holes move to the n-type semiconductor and the p-type semiconductor, And can be used as electric energy from the outside.

In order to produce a large amount of electrical energy, it is important that the solar cell effectively absorb the light incident on the solar cell and effectively collect the charge generated by the absorbed light.

Next-generation solar cells such as dye-sensitized solar cells or quantum dot solar cells in solar cells are being actively studied as alternatives to overcome the limitations of currently used silicon solar cells.

One embodiment provides a solar cell capable of improving light absorption characteristics and charge transfer characteristics.

Another embodiment provides a method of manufacturing the solar cell.

According to an embodiment, there is provided a plasma display panel comprising a first electrode and a second electrode facing each other, and an active layer positioned between the first electrode and the second electrode, wherein the active layer has a plurality of hollow And a light absorber disposed on a surface of the photoelectrode. The present invention also provides a solar cell comprising: a light scattering body having a plurality of nanostructures extending from the light scattering body;

The plurality of nano bodies may extend from the light scattering body to the inside of the hollow.

The aspect ratio of the nanosheets may be greater than one.

The nanosheets can include nanowires, nanorods, nanotubes, nanodots, or combinations thereof.

The nanosheets may have a diameter of about 5 nm to 100 nm and a length of about 50 nm to 1000 nm.

The plurality of hollows may be connected to each other in three-dimensional directions.

Each of the hollows may have a spherical shape.

The photoelectrode may comprise titanium oxide.

The photoelectrode may be made of a material selected from the group consisting of titanium oxide or aluminum (Al), copper (Cu), lanthanum (La), lithium (Li), niobium (Ni), tantalum (Ta), tungsten May include doped titanium oxide.

The light scattering body and the plurality of nano bodies may include titanium oxide in an anatase phase.

And the light absorber may be adsorbed on the surface of the light scattering body and the surface of the plurality of nano bodies.

The light absorber may comprise a dye, a quantum dot, or a combination thereof.

According to another embodiment, the method includes forming a first electrode, forming an active layer on the first electrode, and forming a second electrode on the active layer, A method of manufacturing a semiconductor device, comprising: disposing a plurality of polymer particles on an electrode; supplying an oxide semiconductor to a surface of the polymer particles; thermally decomposing the polymer particles by heat treatment to crystallize the oxide semiconductor to form a light scattering body having a plurality of hollow Forming a plurality of nanostructures extending from the light scattering body by contacting the nanostructure-forming precursor solution with the light scattering body, and supplying a light absorber to the surface of the light scattering body and the plurality of nanostructures Step < / RTI >

The step of supplying the oxide semiconductor may use an atomic layer deposition, a chemical vapor deposition, a layer-by-layer deposition, or a combination thereof.

The heat treatment may be performed at about 450 ° C or higher.

The precursor solution for forming a nano body may include a metal salt having a bulky alkyl chain.

The metal salt having a bulky alkyl chain can be obtained by mixing a metal salt and an organic solvent having a bulky alkyl chain, and substituting the metal salt with the bulky alkyl chain.

The metal salt may be a titanium salt.

The precursor solution for forming a nano body may further include ethylenediamine, acetylacetone, diethylammonium, or a combination thereof.

The oxide semiconductor may include titanium oxide.

It is possible to secure the absorption area of the light absorber and improve the light absorption characteristics and the charge transfer characteristics.

1 is a cross-sectional view illustrating a solar cell according to one embodiment,
Fig. 2 is a schematic view showing an enlarged part of Fig. 1,
FIGS. 3 to 6 are schematic views sequentially showing a method of manufacturing the solar cell of FIG. 1,
7 is a SEM photograph showing the active layer in the solar cell according to Example 1,
FIG. 8 is an SEM photograph of an enlarged yellow box portion, and FIG.
9 is a graph showing the light scattering effect in the visible light region of the solar cell according to Example 1 and Comparative Example 1,
FIG. 10 is a graph showing the light absorption characteristics of the solar cell according to Example 1 and Comparative Example 1. FIG.

Hereinafter, exemplary embodiments of the present invention will be described in detail so that those skilled in the art can easily carry out the present invention. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.

Unless otherwise defined herein, 'substituted' means that a hydrogen atom in the compound is a halogen atom (F, Br, Cl or I), a hydroxy group, an alkoxy group, a nitro group, a cyano group, an amino group, A carboxyl group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid or a salt thereof, a C1 to C20 alkyl group, a C2 to C20 alkenyl group, a C2 to C20 alkenyl group, a C2 to C20 alkenyl group, C6 to C30 arylalkyl groups, C7 to C30 arylalkyl groups, C1 to C4 alkoxy groups, C1 to C20 heteroalkyl groups, C3 to C20 heteroarylalkyl groups, C3 to C30 cycloalkyl groups, C3 to C15 cycloalkenyl groups, C6 to C30 heteroaryl groups, C15 cycloalkynyl group, a C2 to C20 heterocycloalkyl group, and combinations thereof.

In the drawings, the thickness is enlarged to clearly represent the layers and regions. Like parts are designated with like reference numerals throughout the specification. Whenever a portion of a layer, film, region, plate, or the like is referred to as being "on" another portion, it includes not only the case where it is "directly on" another portion, but also the case where there is another portion in between. Conversely, when a part is "directly over" another part, it means that there is no other part in the middle.

Hereinafter, a solar cell according to one embodiment will be described with reference to FIGS. 1 and 2. FIG.

FIG. 1 is a cross-sectional view showing a solar cell according to one embodiment, and FIG. 2 is a schematic view showing an enlarged part of FIG.

The solar cell according to an embodiment includes a first electrode 120 and a second electrode 150 facing each other and an active layer 130 located between the first electrode 120 and the second electrode 150 .

The first electrode 120 and the second electrode 150 may be respectively supported by a substrate (not shown). The substrate may be made of, for example, transparent glass or a polymer resin, and the polymer resin may be, for example, polyacrylate, polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyarylate, polyetherimide, polyether sulfone, Polylactide, polyimide, traaacetylcellulose, or combinations thereof.

The first electrode 120 may be made of a conductive material having transparency and may be formed of an inorganic conductive material such as indium tin oxide (ITO) or fluorine containing tin oxide (FTO) Organic conductive materials such as polythiophenes.

The second electrode 150 may be made of a transparent or opaque conductive material such as indium tin oxide (ITO), fluorine-containing tin oxide (FTO), metal such as Al, antimony-doped tin oxide ATO) and combinations thereof.

The substrate supporting the first electrode 120 and the substrate supporting the second electrode 150 are fixed by the spacers 160 and the regions defined by the substrates and spacers may be filled with an electrolyte .

The electrolyte supplies an oxidizing / reducing material, and may be a liquid electrolyte or a solid polymer electrolyte.

The active layer 130 includes a light absorber 134 located on one surface of the first electrode 120 and adsorbed on the surface of the photoelectrode 131 and the photoelectrode 131. [

The photoelectrode 131 may serve not only as a support for attracting the light absorber 134, but also for moving or collecting the charge generated in the light absorber 134.

The light electrode 131 may include a crystalline oxide semiconductor and may include crystalline titanium oxide, for example. The titanium oxide may be selected from the group consisting of titanium oxide, aluminum (Al), copper (Cu), lanthanum (La), lithium (Li), niobium (Ni), tantalum (Ta), tungsten May comprise doped titanium oxide. The crystalline titanium oxide may include, for example, titanium oxide in an anatase phase.

The light electrode 131 includes a light scattering body 132 having a plurality of hollows 70 and a plurality of nano bodies 133 extending from the light scattering body 132.

The light scattering body 132 includes a crystalline oxide semiconductor and may include titanium oxide, for example, in an anatase phase. The light scattering body 132 may serve as a seed for growing the plurality of nano bodies 133. The light scattering body 132 may have a thickness of about 1 nm to 200 nm, and may have a thickness of about 5 nm to 100 nm within the above range.

The hollows 70 may have a substantially spherical shape, and may include a plurality of the hollows 70 which are tangent to each other in three-dimensional directions. The hollow 70 may be spherical, for example, laminated in a closest packing structure in a three-dimensional direction, and may have a hexagonal close-packing (hcp) or a face-centered cubic (fcc ), But is not limited thereto. The hollow 70 may be, but is not limited to, an inverse opal structure. The hollow 70 is a substantially empty space, and light incident through the first electrode 120 can be confined through a scattering mechanism to improve light absorption characteristics.

The nano body 133 is located inside the light scattering body 132 and extends from the light scattering body 132 to the inside of the hollow 70. The nano body 133 may be arranged toward the center point of the hollow 70, for example. The nano body 133 may be grown by using the light scattering body 132 as a seed and may have nanowires, nanorods, nanotubes, or the like having an aspect ratio of greater than about 1. [ , A nanoniddle, or a combination thereof. Each nano body 133 may have a diameter of, for example, about 5 nm to 100 nm and a length of about 50 nm to 1000 nm.

The nano body 133 compensates for the reduction of the specific surface area of the photoelectrode 131 due to the hollow 70 of the light scattering body 132 and the total specific surface area of the photoelectrode 131 to which the light absorber 134 is adsorbed The absorption area of the light absorber 134 to be described later can be ensured. Accordingly, a sufficient amount of the light absorber 134 can be adsorbed to secure a high photocurrent density.

The light absorber 134 may be adsorbed on the surface of the light scattering body 132 and the nano body 133, for example, in the form of particles. The light absorber 134 is not particularly limited as long as it is a material that absorbs light to generate excited electrons, and may be, for example, a dye, a quantum dot, or a combination thereof.

The dyes may be inorganic dyes, organic dyes or organic dyes, and examples thereof include ruthenium-based organic metal compounds, xanthine dyes, cyanine dyes, basic dyes, porphyrin dyes, azo dyes, phthalocyanine dyes, anthraquinone dyes, quinone dyes Colorants, or combinations thereof, but is not limited thereto.

The quantum dots include, for example, a first element selected from Group 2, Group 12, Group 13 and Group 14, and a second element selected from Group 16; A first element selected from group 13 and a second element selected from group 15; A Group 14 element; Or their core / shell structures. The quantum dots include, for example, CdSe, CdTe, CdS, ZnSe, ZnS, InP, InAs, GaN, GaP, GaAs, HgTe, Si, Ge, CdS / ZnSe, CdS / ZnS, CdSe / ZnS, CdS / CdS. CdSe / CdS, CdSe / ZeSe, CdTe / CdSe, CdSe / ZnTe.

Hereinafter, a method of manufacturing a solar cell according to an embodiment will be described with reference to FIGS. 3 to 6 with reference to FIGS. 1 and 2. FIG.

Figs. 3 to 6 are schematic views sequentially illustrating a method of manufacturing the solar cell of Fig.

The method of manufacturing a solar cell according to an embodiment includes forming the first electrode 120, forming the active layer 130 on the first electrode 120, and forming the second electrode 150 on the active layer 130 .

The first electrode 120 and the second electrode 150 may be formed on a substrate (not shown), for example, by sputtering, chemical vapor deposition, or a solution process.

The step of forming the active layer 130 will be described with reference to the drawings.

Referring to FIG. 3, a plurality of polymer particles 50 are disposed on the first electrode 120. The polymer particles 50 may be arranged in a single layer or a plurality of layers and may be, for example, polystyrene (PS) or polymethyl (meth) acrylate (PMMA). The polymer particles 50 may have a uniform diameter, for example, of about 100 nm or more, and may have an average diameter of, for example, about 100 nm to 500 nm. The polymer particles 50 may be applied in the form of, for example, a solution, a dispersion or a paste, and the surface thereof may be modified to improve affinity with an oxide semiconductor to be described later.

Next, referring to FIG. 4, an oxide semiconductor is supplied to the polymer particles 50 to form an oxide semiconductor layer 132a on the surface of the polymer particles 50. FIG. The oxide semiconductor may include titanium oxide and may be formed by a combination of two or more materials selected from the group consisting of an atomic layer deposition method, a chemical vapor deposition method, a layer-by-layer deposition method, Can supply. The oxide semiconductor layer 132a may be formed to a thickness of about 1 nm to 200 nm, and the oxide semiconductor layer 132a may be formed to a thickness of about 5 nm to 100 nm within the above range.

5 and 6, the substrate on which the first electrode 120 is formed is heat-treated to thermally decompose the polymer particles 50 to crystallize the oxide semiconductor layer 132a. The heat treatment may be performed at a temperature sufficient to cause the polymer particles 50 to be thermally decomposed and the oxide semiconductor layer 132a to crystallize, and may be performed at a temperature of, for example, about 450 캜 or higher, for example, at about 450 캜 to 550 캜 can do.

The polymer particles 50 are pyrolyzed and hollow spaces 70 may be formed at positions where the polymer particles 50 are present. The hollows 70 may be formed so as to be connected to each other in a three-dimensional direction, and may be formed as an inverted opal structure, for example. The oxide semiconductor layer 132a may be formed of a light scattering body 132 including a crystalline oxide semiconductor while being crystallized.

Next, a nanocrystal-forming precursor solution is contacted with the light scattering body 132 to form a plurality of nanostructures 133 extending from the light scattering body 132. The nano body 133 can be grown by seeding a light scattering body 132 including a crystalline oxide semiconductor.

The precursor solution for forming a nano body may include a metal salt having a bulky alkyl chain. By controlling the rate of hydrolysis due to the bulky alkyl chain, a light scattering body containing a crystalline oxide semiconductor 132) may be used as a seed to form a nano body having an aspect ratio of 1 or more. If the rate of the hydrolysis reaction is not controlled, metal particles in the form of powder formed from the metal salt remain, and nano-bodies extending into the light scattering body 132 can not be formed.

The metal salt having a bulky alkyl chain can be obtained by mixing a metal salt and an organic solvent having a bulky alkyl chain, and substituting the metal salt with the bulky alkyl chain.

The metal salt may be a titanium salt, and the titanium salt may be at least one selected from the group consisting of titanium acetate, titanium carbonyl, titanium carbonate, titanium nitrate, titanium nitrate, titanium sulfate, titanium phosphate, titanium chloride, titanium hydroxide, titanium alkoxide, Lt; / RTI > The titanium salt may be, for example, titanium acetyl acetonate, titanium acetate, titanium chloride, titanium isopropoxide or a hydrate thereof, no.

The organic solvent having a bulky alkyl chain may be, for example, triethanolamine, but is not limited thereto.

The metal salt and the organic solvent may be contained in a molar ratio of about 1: 1 to 1: 5.

The precursor solution for forming a nano body may further include an additive. The additive may be, for example, ethylenediamine, acetylacetone, diethylammonium or a combination thereof.

The hydrolysis reaction may be carried out at about 80 ° C or higher, for example, at about 80 ° C to 180 ° C.

Next, a light absorber is supplied to the surfaces of the light scattering body and the plurality of nano bodies. The light absorber is not particularly limited as long as it is a substance that absorbs light to be excited, and may be, for example, a dye, a quantum dot, or a combination thereof. The light absorber may be supplied, for example, by way of immersing the substrate in a dispersion containing a light absorber, but is not limited thereto.

Hereinafter, the present invention will be described in more detail with reference to examples. The following examples are for illustrative purposes only and are not intended to limit the scope of the invention.

Manufacture of solar cells

Example  One

The polystyrene dispersion is prepared by stirring carboxyl-modified polystyrene (PS) particles having a diameter of 420 nm at a volume ratio of 1: 100 with water. Then, the polystyrene dispersion was placed in an 80 ml vial bottle, and a glass substrate on which a fluorine-containing tin oxide (FTO) electrode was deposited to a thickness of 700 nm was vertically erected to align the polystyrene particles on the FTO electrode. Subsequently, the substrate is taken out and dried at 80 캜. The ordered polystyrene particles were then deposited with 30 nm thick titanium oxide using atomic layer deposition (ALD). Subsequently, the substrate is heat-treated at 450 DEG C for 1 hour to form an anatase-phase titanium oxide, and the polystyrene particles are burned to form a hollow. Then, a mixture of titanium isopropoxide solution and triethanolamine in a molar ratio of 1: 2 is added to 800 ml of distilled water to prepare a precursor solution. A small amount of ethylenediamine is then added to the precursor solution. Subsequently, the heat-treated substrate is immersed in the precursor solution, and reacted at 90 DEG C for 24 hours to grow a plurality of nano-rods using the titanium oxide of the anatase phase as a seed. Then, the titanium oxide on the anatase phase and the nano-rod are adsorbed with ruthenium (2,20-bipyridyl-4,40-dicarboxylate) 2 (NCS) 2. Subsequently, the substrate is fixed with an opposing substrate on which ITO is deposited and a spacing material, and an electrolyte lodolyte AN-50 (Solaronix) is injected to manufacture a solar cell.

Comparative Example  One

The polystyrene dispersion is prepared by stirring carboxyl-modified polystyrene (PS) particles having a diameter of 420 nm at a volume ratio of 1: 100 with water. Then, the polystyrene dispersion was placed in an 80 ml vial bottle, and a glass substrate on which a fluorine-containing tin oxide (FTO) electrode was deposited to a thickness of 700 nm was vertically erected to align the polystyrene particles on the FTO electrode. Subsequently, the substrate is taken out and dried at 80 캜. The ordered polystyrene particles were then deposited with 30 nm thick titanium oxide using atomic layer deposition (ALD). Subsequently, the substrate is heat-treated at 450 DEG C for 1 hour to form an anatase-phase titanium oxide, and the polystyrene particles are burned to form a hollow. Then, the N719 dye [2,20-bipyridyl-4,40-dicarboxylate 2 (NCS) 2] is adsorbed onto the titanium oxide of the anatase phase. Subsequently, the substrate is fixed with an opposing substrate on which ITO is deposited and a spacing material, and an electrolyte lodolyte AN-50 (Solaronix) is injected to manufacture a solar cell.

evaluation

Rating 1

The formation of titanium oxide, hollow and nano-rods on the anatase phase in the solar cell according to Example 1 is confirmed.

FIG. 7 is a SEM photograph showing the active layer in the solar cell according to Example 1, and FIG. 8 is an SEM photograph showing an enlarged yellow box portion.

Referring to FIGS. 7 and 8, it can be seen that a plurality of hollow, anatase-phase titanium oxide and nano-rods are formed.

Rating 2

The amount of dye loaded in the solar cell according to Example 1 and Comparative Example 1 is evaluated.

The amount of dye loaded is evaluated in the following manner.

First, a desalting agent was prepared by mixing distilled water, ethanol and ammonium hydroxide at a ratio of 5: 5: 1. Then, a dye solution was added to the TiO2 nanoparticles in a control solution in which the dye was diluted 100 times with the desorbing agent and in a desorbent for 24 hours. The adsorbed substrate is immersed to prepare a comparative solution in which the dye is desorbed. The prepared control solution and the comparative solution are measured for absorbance using a UV / Vis spectroscope (Lamda 35, Perkin-Elmer). The measured absorbance is compared with the molar ratio of the dye to determine the amount of dye loaded.

The results are shown in Table 1.

Example 1 Comparative Example 1 Dye Loading Amount (mol / ㎠) 0.85 x 10 ^-7 0.74 x 10 ^-7

Referring to Table 1, it can be seen that the solar cell according to Example 1 has a higher dye loading than the solar cell according to Comparative Example 1. [

Rating 3

The light scattering effect of the solar cell according to Example 1 and Comparative Example 1 is evaluated.

The light scattering effect is evaluated by reflectance in a visible light region of about 400 to 800 nm using a UV / Vis spectroscope (Lamda 35, Perkin-Elmer).

The result is shown in Fig.

9 is a graph showing the light scattering effect in the visible light region of the solar cell according to Example 1 and Comparative Example 1. FIG.

Referring to FIG. 9, it can be seen that the solar cell according to Example 1 has an improved light scattering effect as compared with the solar cell according to Comparative Example 1.

Rating 4

The absorbance of the solar cell according to Example 1 and Comparative Example 1 is evaluated.

The absorbance is evaluated by the following method.

First, a desorption agent was prepared by mixing distilled water, ethanol, and ammonium hydroxide at a ratio of 5: 5: 1. Then, the substrate on which TiO 2 nanoparticles were adsorbed with dye was immersed in a control solution in which a dye was diluted 100 times with a desorbing agent and a desorbing agent for 24 hours Prepare a comparative solution from which the dye has been desorbed. The prepared control solution and the comparative solution are measured using a UV / Vis spectroscope (Lamda 35, Perkin-Elmer).

See FIG. 10 for the results.

FIG. 10 is a graph showing the light absorption characteristics of the solar cell according to Example 1 and Comparative Example 1. FIG.

Referring to FIG. 10, it is confirmed that the solar cell according to Example 1 has improved light absorption characteristics as compared with the solar cell according to Comparative Example 1.

Rating 5

Current density, filling rate and efficiency of the solar cell according to Example 1 and Comparative Example 1 are evaluated.

The current density, filling rate and efficiency are measured using a potentiostat (CHI660, CHI instrument) under 1 Sun (100 mA / cm2) conditions using a Solar Simulator (Oriel Sol 3A class AAA, Newport).

The results are shown in Table 2.

Example 1 Comparative Example 1 Current density (Jsc, mA / cm < 2 >) 16.48 15.36 Filling rate (FF,%) 73.21 72.64 efficiency(%) 9.75 8.97

Referring to Table 2, it can be confirmed that the solar cell according to Example 1 has improved current density, filling rate and efficiency as compared with the solar cell according to Comparative Example 1. [ Specifically, the current density of the solar cell according to Example 1 is increased by about 7.3% and the efficiency of the solar cell according to Comparative Example 1 is improved by about 9%.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, And falls within the scope of the invention.

50: polymer particle 70: hollow
120: first electrode
130: active layer 131: photoelectrode
132: light scattering body 133: nano body
134: light absorber 150: second electrode

Claims (20)

A first electrode and a second electrode facing each other, and
An active layer disposed between the first electrode and the second electrode,
/ RTI >
The active layer
A photo-electrode including a light scattering body having a plurality of hollow bodies and a crystalline oxide semiconductor, and a plurality of nanostructures extending from the light scattering body, and
The optical absorber positioned on the surface of the optical electrode
≪ / RTI >
The method of claim 1,
Wherein the plurality of nano bodies extend from the light scattering body to the inside of the hollow.
The method of claim 1,
Wherein the nanoscale aspect ratio of the solar cell is greater than 1.
4. The method of claim 3,
Wherein the nanosheets comprise nanowires, nanorods, nanotubes, nanodots, or combinations thereof.
4. The method of claim 3,
Wherein the nano body has a diameter of 5 nm to 100 nm and a length of 50 nm to 1000 nm.
The method of claim 1,
Wherein the plurality of hollows are connected to each other in three-dimensional directions.
The method of claim 6,
Wherein each of the hollows has a spherical shape.
The method of claim 1,
Wherein the photoelectrode comprises titanium oxide.
9. The method of claim 8,
The photoelectrode may be formed of titanium oxide or one or more of aluminum (Al), copper (Cu), lanthanum (La), lithium (Li), niobium (Ni), tantalum (Ta), tungsten A combination solar cell comprising doped titanium oxide.
9. The method of claim 8,
Wherein the light scattering body and the plurality of nano bodies include titanium oxide in an anatase phase.
The method of claim 1,
Wherein the light absorber is adsorbed on a surface of the light scattering body and a surface of the plurality of nano bodies.
The method of claim 1,
Wherein the light absorber comprises a dye, a quantum dot, or a combination thereof.
Forming a first electrode,
Forming an active layer on the first electrode, and
Forming a second electrode on the active layer
Lt; / RTI >
The step of forming the active layer
Disposing a plurality of polymer particles on the first electrode,
Supplying an oxide semiconductor to the surface of the polymer particles,
Thermally decomposing the polymer particles to crystallize the oxide semiconductor to form a light scattering body having a plurality of voids,
Forming a plurality of nano bodies extending from the light scattering body by contacting the nanoparticle forming precursor solution with the light scattering body, and
Supplying a light absorber to the surfaces of the light scattering body and the plurality of nano bodies,
Wherein the method comprises the steps of:
The method of claim 13,
The step of supplying the oxide semiconductor may include a step of depositing the oxide semiconductor using an atomic layer deposition method, a chemical vapor deposition method, a layer-by-layer deposition method, or a combination thereof. Gt;
The method of claim 13,
Wherein the heat treatment is performed at 450 DEG C or higher.
The method of claim 13,
Wherein the precursor solution for forming a nano body comprises a metal salt having a bulky alkyl chain.
17. The method of claim 16,
The metal salt having a bulky alkyl chain
Mixing a metal salt with an organic solvent having a bulky alkyl chain, and
Replacing the metal salt with the bulky alkyl chain
Wherein the method comprises the steps of:
17. The method of claim 16,
Wherein the metal salt is a titanium salt.
17. The method of claim 16,
Wherein the precursor solution for forming a nano body further comprises ethylenediamine, acetylacetone, diethylammonium, or a combination thereof.
The method of claim 13,
Wherein the oxide semiconductor comprises titanium oxide.

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