KR20150093308A - Apparatus for dechuking substrate, method of dechuking substrate, Apparatus for processing substrate and method of processing substrate using the same - Google Patents

Apparatus for dechuking substrate, method of dechuking substrate, Apparatus for processing substrate and method of processing substrate using the same Download PDF

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KR20150093308A
KR20150093308A KR1020140013910A KR20140013910A KR20150093308A KR 20150093308 A KR20150093308 A KR 20150093308A KR 1020140013910 A KR1020140013910 A KR 1020140013910A KR 20140013910 A KR20140013910 A KR 20140013910A KR 20150093308 A KR20150093308 A KR 20150093308A
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substrate
chamber
pressure
substrate support
load lock
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KR1020140013910A
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Korean (ko)
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김영학
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엘아이지인베니아 주식회사
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Priority to KR1020140013910A priority Critical patent/KR20150093308A/en
Publication of KR20150093308A publication Critical patent/KR20150093308A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

A substrate dechucking apparatus according to the present invention, in which the substrate is smoothly dechucked without pumping and venting the chamber for dechucking the substrate from a substrate support such as a substrate tray, a stage, And a pressure regulation chamber in which the inner pressure is adjusted so as to dechuck the substrate from the substrate support by a pressure difference between the inside and outside of the chamber to form a space shielded from the outside by contacting the substrate support, Vacuum is maintained in the process space connected to dechucking and unloading, so that the unnecessary process time required to regulate the pressure inside the chambers is shortened, and the productivity is improved.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate dechucking apparatus and a substrate dechucking method, a substrate processing apparatus using the substrate dechucking apparatus,

The present invention relates to a substrate dechucking apparatus and a substrate dechucking method, a substrate processing apparatus and a substrate processing method using the same, and more particularly, to a substrate dechucking apparatus and a substrate dechucking method for dechucking a substrate from a substrate support, A substrate processing apparatus, and a substrate processing method.

A display device using organic light emitting diodes (OLED) is manufactured by depositing an organic compound on a substrate. A cluster type substrate processing apparatus or an in-line type substrate processing apparatus may be used to manufacture such a display device.

In a cluster type substrate processing apparatus, a plurality of chambers such as a process chamber, a load lock chamber, and the like are disposed in the periphery of the transfer chamber. In such a cluster type substrate processing apparatus, a stage for stably supporting a substrate is disposed in each chamber, and a substrate is transferred to each chamber by a transfer robot installed inside the transfer chamber and a process is performed.

An in-line type substrate processing apparatus is provided with a plurality of chambers, such as a load lock chamber, a process chamber, and the like, linearly arranged, and a conveying means such as a roller conveyor for conveying a substrate within the chambers. Such an in-line type substrate processing apparatus supports the substrate on the substrate tray in order to stably support the substrate being transported and prevent the substrate from sagging, and the substrate tray and the substrate are transported together and the process is performed.

On the other hand, as an apparatus for supporting a substrate, an adhesive chuck has been developed which facilitates chucking and dechucking of a substrate compared to an electrostatic chuck. Such an adhesion process has been disclosed in Korean Patent No. 1221034, developed and filed by the present applicant, and a substrate processing apparatus and substrate processing apparatus using the same.

Such an adhesive chuck must vacuum adsorb the substrate to bring the substrate into close contact with the adhesive member. However, in order to vacuum-adsorb or dechuck the substrate, the pumping and vent processes inside the chamber must be performed in parallel.

If the pumping and venting processes in the chamber are performed in parallel, it takes a long time for pumping and venting to deteriorate the productivity. In addition, there is a problem that external air or impurities may flow into the chamber, have. In particular, since OLEDs are made of organic compounds, they are easily damaged when they are exposed to the air, and thus the quality of the OLEDs is deteriorated.

Korean Registered Patent No. 1221034 (disclosed on Apr. 16, 2012)

It is an object of the present invention to provide a substrate dechucking apparatus and substrate dechucking method in which a substrate is smoothly dechucked without pumping and venting of a chamber for dechucking a substrate from a substrate support such as a substrate tray, And to provide a substrate processing apparatus and a substrate processing method using the same.

The substrate dechucking apparatus according to the present invention comprises a substrate support for supporting a substrate and a space which is in contact with the substrate support to be shielded from the outside, and a pressure difference between the inside and the outside of the substrate dechucking apparatus, And a pressure regulating chamber to be regulated.

The pressure regulating chamber is in contact with one surface of the substrate support on which the substrate is supported, and the inside of the pressure regulating chamber may be formed at a low pressure.

The pressure regulating chamber may be in contact with the opposite surface of the substrate support to which the substrate is supported, and the pressure regulating chamber may be formed at a higher pressure than the outside.

Meanwhile, in the substrate dechucking method according to the present invention, a pressure control chamber is contacted with a substrate support for supporting a substrate, the inside of the pressure control chamber is shielded from the outside, and the pressure inside the pressure control chamber is controlled, And the substrate is dechucked from the substrate support by an internal or external pressure difference.

Meanwhile, the substrate processing apparatus according to the present invention includes a chamber in which a vacuum pressure is maintained, a substrate support for supporting the substrate inside the chamber, and a space shielded from the inside of the chamber by contacting the substrate support, And a pressure regulation chamber in which the inner pressure is adjusted so that the substrate is dechucked from the substrate support by a car.

The substrate support is a substrate tray that supports the substrate and is transported with the substrate. The substrate processing apparatus may further include a conveyor that supports the substrate support and transports the substrate support.

The substrate and the substrate support are transported together into a substrate dechucking chamber, and the pressure control chamber may be disposed in the substrate dechucking chamber.

The substrate support may be a stage disposed within the chamber to support the substrate.

The substrate processing apparatus includes a first load lock chamber to which a first cassette accommodated with a plurality of the substrates are supplied, a loading chamber connected to the first load lock chamber and receiving the first cassette from the first load lock chamber, A second load lock chamber to which a second empty cassette is supplied, and an unloading chamber connected to the second load lock chamber and receiving the second cassette from the second load lock chamber, The unloading chamber is closed from the first load lock chamber and the second load lock chamber while all of the plurality of substrates received in the first cassette are accommodated in the second cassette to prevent the chamber from being exposed to normal pressure .

Meanwhile, in the method of processing a substrate according to the present invention, a substrate is loaded into a chamber in which vacuum pressure is maintained, and the substrate is supported and supported by a substrate support, a pressure control chamber is contacted with the substrate support, And a substrate dechucking step in which the substrate is dechucked from the substrate support by a pressure difference inside and outside the pressure control chamber, the pressure inside the pressure control chamber being adjusted.

Since the substrate dechucking apparatus and substrate dechucking method, substrate processing apparatus and substrate processing method using the same according to the present invention maintain a vacuum in a process space connected by loading, processing, dechucking and unloading of a substrate, The productivity is improved by shortening the unnecessary process time required for regulating the pressure again.

In addition, the substrate dechucking apparatus and substrate dechucking method, substrate processing apparatus and substrate processing method using the substrate dechucking apparatus and substrate dechucking method according to the present invention prevent foreign particles from entering into the substrate, There is an effect that the quality of the surface of the substrate or the quality of the film formed on the substrate is improved by preventing the quality or the destruction of the film formed on the substrate.

1 is a side view schematically showing a substrate dechucking apparatus according to the first embodiment.
FIG. 2 is an enlarged view showing the 'I' portion shown in FIG. 1 in the substrate dechucking apparatus according to the first embodiment.
3 is a flowchart showing a substrate dechucking method according to the first embodiment.
4 to 6 are process diagrams illustrating a substrate dechucking operation of the substrate dechucking apparatus according to the first embodiment.
FIG. 7 is an enlarged cross-sectional view showing the 'I' portion shown in FIG. 1 in the substrate dechucking apparatus according to the second embodiment.
8 is an enlarged cross-sectional view of the substrate dechucking apparatus according to the third embodiment showing the 'I' portion shown in FIG.
9 is a side view schematically showing the substrate dechucking apparatus according to the fourth embodiment.
10 is a side view showing the operation of the substrate dechucking apparatus according to the fourth embodiment.
11 is a side view schematically showing the substrate processing apparatus according to the first embodiment.
12 is a flowchart showing a substrate processing method according to the first embodiment.
13 is a plan view schematically showing a substrate processing apparatus according to the second embodiment.

The terms and words used in the present specification and claims should not be construed as limited to ordinary or dictionary terms and the inventor may appropriately define the concept of the term in order to best describe its invention It should be construed as meaning and concept consistent with the technical idea of the present invention. Therefore, the embodiments described in the present specification and the configurations shown in the drawings are only examples of the present invention, and are not intended to represent all of the technical ideas of the present invention, so that various equivalents and modifications may be made thereto .

Hereinafter, a substrate dechucking apparatus will be described in order to facilitate the understanding and understanding of the present invention, and an embodiment of a substrate deposition apparatus using the substrate dechucking apparatus will be described. The substrate dechucking apparatus of the present invention can be used for dechucking a substrate in a substrate dechucking apparatus as well as a coalescing apparatus, an etching apparatus, and various other apparatuses for processing a substrate.

Hereinafter, a substrate dechucking apparatus according to the present invention will be described with reference to the accompanying drawings.

FIG. 1 is a side view schematically showing a substrate dechucking apparatus according to a first embodiment, and FIG. 2 is an enlarged sectional view showing an 'I' portion shown in FIG. 1 in a substrate dechucking apparatus according to a first embodiment.

Referring to FIG. 1, a substrate dechucking apparatus 100 according to a first embodiment may include a chamber 110, a substrate support 120, and a pressure control chamber 140.

The chamber 110 may be provided with at least one gate valve 111 for entering and exiting the substrate 10. The chamber 110 is evacuated by a vacuum pump (not shown) so that the pneumatic pressure can be maintained.

The substrate support 120 supports the substrate 10 within the chamber 110.

Here, when the substrate dechucking apparatus 100 according to the first embodiment is applied to an in-line type substrate processing apparatus in which the substrate 10 is transferred and processed, a substrate tray can be used as the substrate support 120 . The substrate tray can be transported with the substrate 10 while maintaining the state of the substrate 10 so that the substrate 10 being transported can be stably transported. As described above, when the substrate support 120 is used as a substrate tray, a conveyor for supporting the substrate tray can be additionally provided in the chamber 110. On the other hand, when the substrate dechucking apparatus 100 according to the first embodiment is applied to a cluster type substrate processing apparatus including a transfer chamber, the stage can be used as the substrate support 120. [

The support surface of the substrate support 120 may be provided with an adhesive member (not shown) to support the substrate 10 independently of the substrate support 120 without the aid of separate power means or pressure means such as an exhaust line of a vacuum chuck, 121 may be provided. As for the adhesive chuck, it has already been disclosed by the Korean Registered Patent No. 1221034 (published on Apr. 16, 2012), which was filed and registered by the applicant of the present invention, and therefore a detailed description thereof will be omitted.

A pin hole 122 is formed in the substrate support 120 and a lift pin 130 may be disposed inside the chamber 110. The lift pins 130 may be installed to move up and down through the substrate support 120 through the pin holes 122. That is, the lift pins 130 may be disposed below the substrate support 120 and extend outwardly of the chamber 110 through the lower wall of the chamber 110. A lift pin lifting and lowering module 131 for lifting and lifting the lift pin 130 may be disposed at an outer lower portion of the chamber 110. The lift pin lifting module 131 may be an actuator such as a linear actuator including a hydraulic / pneumatic cylinder, a linear actuator including a ball screw and a rotary motor. Of course, a hermetic member 132 such as a bellows may be installed outside the lower wall of the chamber 110 through which the lift pin 130 penetrates.

The lift pins 130 are used to lift the substrate 10 so that the substrate 10 or the substrate support 120 can be smoothly taken out of the chamber 110 after the substrate 10 is dechucked from the substrate support 120 .

The pressure regulating chamber 140 may be disposed inside the chamber 110. The pressure regulating chamber 140 may be installed such that one side of the pressure regulating chamber 140 facing the substrate support 120 is open and the substrate support 120 is moved up and down. That is, the pressure regulating chamber 140 may be provided on the upper side of the substrate support 120 by being provided with a housing in which the lower surface is opened. A chamber elevating and lowering module 141 for supporting the pressure adjusting chamber 140 and raising and lowering the pressure adjusting chamber 140 may be disposed outside the chamber 110. As the chamber elevating and lowering module 141, an actuator such as a linear actuator including an oil / pneumatic cylinder, a linear actuator including a ball screw and a rotary motor may be used. A hermetic member 142 such as a bellows may be provided on the outer side of the upper wall of the chamber 110 through which the lift shaft is connected to the pressure control chamber 140 to maintain the airtightness of the chamber 110.

The pressure regulating chamber 140 may be lowered toward the substrate support 120 located inside the chamber 110 and may contact the support surface of the substrate support 120. Accordingly, the inside of the pressure regulating chamber 140 is closed and independent pressure control is possible separately from the inside of the chamber 110. [ The pressure regulating chamber 143 may be connected to the pressure regulating chamber 140 for regulating the pressure of the pressure regulating chamber 140 and the pressure regulating pump 144 may be installed in the conduit of the pressure regulating pipe 143 . The inner pressure of the pressure regulating chamber 140 may be lower than the inner pressure of the chamber 110. A pressure difference between the chamber 110 and the pressure control chamber 140 is generated and the pressure inside the chamber 110 is reduced by the pin hole 122 and the substrate support 120 by the adhesive member 121 and the substrate 10, To the pressure regulating chamber 140 through the spaced apart spaces of the pressure regulating chamber 140. So that the substrate 10 can be smoothly dechucked from the substrate support 120.

Hereinafter, a substrate dechucking method according to the first embodiment will be described with reference to the accompanying drawings.

FIG. 3 is a flowchart illustrating a substrate dechucking method according to the first embodiment, and FIGS. 4 to 6 are process diagrams illustrating a substrate dechucking operation of the substrate dechucking apparatus according to the first embodiment.

Referring to FIGS. 3 to 6, the inside of the chamber 110 may be maintained at a vacuum pressure.

Subsequently, the gate valve 111 of the chamber 110 is opened and the substrate support 120 supporting the substrate 10 is introduced. Of course, it is preferable that the chamber (for example, the process chamber) in which the vacuum pressure is maintained is also kept at the vacuum pressure outside the gate valve 111 into which the substrate 10 and the substrate support 120 are introduced. When the substrate 10 transferred into the chamber 110 is supported by the substrate support 120, the gate valve 111 is closed.

Subsequently, the chamber elevation module 141 lowers the pressure regulating chamber 140. The pressure control chamber is in contact with the upper surface of the substrate support 120, that is, the support surface of the substrate support 120, so that the interior thereof is shielded (step S11)

Subsequently, the pressure regulating pump 144 exhausts the inside of the pressure regulating chamber 140 through the pressure regulating pipe 143. At this time, the inner pressure of the pressure regulating chamber 140 may be lower than the inner pressure of the chamber 110. A pressure difference between the chamber 110 and the pressure control chamber 140 is generated and the pressure inside the chamber 110 is reduced by the pin hole 122 and the substrate support 120 by the adhesive member 121 and the substrate 10 To the pressure regulating chamber 140 through the spaced apart spaces of the pressure regulating chamber < RTI ID = 0.0 > 140. < / RTI > Thus, the substrate 10 can be smoothly dechucked from the substrate support 120 (step S13)

Hereinafter, a substrate dechucking apparatus according to another embodiment will be described. In the following description, components similar to those of the first embodiment described above are denoted by the same reference numerals and the detailed description thereof will be omitted. Therefore, the constituents omitted from the detailed description in the following description can be understood with reference to the above description.

FIG. 7 is an enlarged cross-sectional view showing the 'I' portion shown in FIG. 1 in the substrate dechucking apparatus according to the second embodiment.

Referring to FIG. 7, a substrate dechucking apparatus according to a second embodiment is a modified embodiment of the substrate dechucking apparatus 100 according to the first embodiment described above. In the upper deck of the lift pin 130, 133 may be installed. A hollow 130a is formed at the upper end of the lift pin 130 and a pressure inside the chamber 110 is introduced into the diaphragm 133 through the inside of the lift pin 130 at the upper end of the lift pin 130 An inflow hole 130b may be formed.

The diaphragm 133 is inflated between the substrate support 120 and the substrate 10 such that the substrate 10 is supported on the substrate support 120. As the pressure difference between the chamber 110 and the pressure regulation chamber 140 is increased, To be dechucked smoothly.

8 is an enlarged cross-sectional view of the substrate dechucking apparatus according to the third embodiment showing the 'I' portion shown in FIG.

Referring to FIG. 8, the substrate dechucking apparatus according to the third embodiment is a modified embodiment of the substrate dechucking apparatus 100 according to the second embodiment described above, wherein the adhesive member 121 is annularly provided, (Not shown). The diaphragm 133 is installed inside the adhesive member 121 and communicates with the diaphragm 133 on the substrate support 120 so that the pressure inside the chamber 110 can be introduced into the diaphragm 133 An inflow hole 120a may be formed.

The diaphragm 133 is inflated between the substrate support 120 and the substrate 10 such that the substrate 10 is supported on the substrate support 120. As the pressure difference between the chamber 110 and the pressure regulation chamber 140 is increased, To be dechucked smoothly.

FIG. 9 is a side view schematically showing the substrate dechucking apparatus according to the fourth embodiment, and FIG. 10 is a side view showing the operation of the substrate dechucking apparatus according to the fourth embodiment.

9 and 10, the substrate dechucking apparatus according to the fourth embodiment is a modified embodiment of the substrate dechucking apparatus 100 according to the first embodiment described above, in which the pressure adjusting chamber 140 and the pressure And may include a holding chamber 160.

The pressure control chamber 140 may be disposed to contact the opposite surface of the support surface of the substrate support 120 on which the substrate 10 is supported, i.e., the lower surface of the substrate support 120. The first chamber elevating and lowering module 141 may be disposed on the lower outer side of the chamber 110 to move the pressure regulating chamber 140 up and down.

The pressure holding chamber 160 may be disposed to contact the support surface of the substrate support 120 on which the substrate 10 is supported, that is, the upper surface of the substrate support 120. The pressure holding chamber 160 can be installed to be elevated by the second chamber elevation module 161. The second chamber elevation module 161 may be disposed on the outer side of the chamber 110 to move the pressure holding chamber 160 up and down.

At this time, the inner pressure of the pressure regulating chamber 140 may be formed higher than the pressure inside the chamber 110. That is, an inert gas such as N2 gas is supplied through the pressure control pipe 143 to the inside of the pressure control chamber 140 to form a pressure higher than the pressure inside the chamber 110, and the pressure inside the pressure control chamber 140 May act towards the chamber 110.

The pressure holding chamber 160 prevents the inert gas from flowing into the chamber 110 after the substrate 10 is dechucked from the substrate support 120 to prevent the pressure inside the chamber 110 from rising. Ensure air pressure is maintained.

Thus, the substrate dechucking apparatus 100 according to the fourth embodiment can smoothly dechuck the substrate 10 from the substrate support 120 by the pressure difference between the pressure control chamber 140 and the chamber 110 .

Although not shown, a diaphragm 133 applied to the substrate dechucking apparatus 100 according to the second and third embodiments is additionally provided in the substrate dechucking apparatus 100 according to the fourth embodiment, And the chamber 110, as well as the diagonalization of the substrate using the expansion of the diaphragm 133.

Hereinafter, the substrate processing apparatus according to the first embodiment using the substrate dechucking apparatus described above will be described. Since various embodiments of the substrate dechucking apparatus have been described above, the description of the substrate dechucking apparatus applied to the substrate processing apparatus according to the first embodiment will be omitted below. However, the chamber of the above-described substrate dechucking apparatus may be replaced with other chambers included in the substrate processing apparatus according to the first embodiment to be described below in order to prevent the chamber included in the substrate dechucking apparatus described above from being confused. It will be called the dechucking chamber.

10 is a side view schematically showing the substrate processing apparatus according to the first embodiment.

Referring to FIG. 10, the substrate processing apparatus 200 according to the first embodiment includes a first load lock chamber 210, a loading chamber 220, a process chamber 230, a substrate dechucking chamber 240, Chamber 250 and a second load lock chamber 260.

The first load lock chamber 210 is provided with a first gate valve 271 through which the substrate 10 is introduced from the outside. A second gate valve 272 is provided between the first load lock chamber 210 and the loading chamber 220. A third gate valve 273 is provided between the loading chamber 220 and the process chamber 230. A fourth gate valve 274 is provided between the process chamber 230 and the substrate dechucking chamber 240. A fifth gate valve 275 is provided between the substrate dechucking chamber 240 and the unloading chamber 250. A sixth gate valve 276 is provided between the unloading chamber 250 and the second load lock chamber 260. The second load lock chamber 260 is provided with a seventh gate valve 277 for allowing the substrate 10 to be taken out to the outside.

Here, although the process chamber 230 is shown in the attached drawings as a single unit, the process chambers 230 are provided in plural according to the processing process of the substrate 10 (for example, an organic thin film deposition process) Between the plurality of process chambers, a gate valve for interrupting the entry / exit of the substrate 10, the process gas, the source, and the particles in each process chamber may be additionally configured.

On the other hand, the first load lock chamber to the second load lock chamber 210, 220, 230, 240, 240, 250 and 260 are linearly arranged and the substrate 10 is transferred from the process chamber 230 to the substrate dechucking chamber Line type by a conveyor 280 which is connected to the conveyor belt 240. [ Thus, for stable support of the substrate 10 and smooth transport of the substrate 10, the substrate 10 can be transported while being supported on a substrate support 120, such as a substrate tray.

The substrate processing apparatus 200 according to the first embodiment includes a plurality of substrates 10 that are supplied with a first cassette 21 containing a plurality of substrates 10 into a first load lock chamber 210, A second cassette 22 which can be accommodated can be supplied to the second load lock chamber 260. The first cassette 21 is brought into the loading chamber 220 after the vacuum pressure of the first load lock chamber 210 is formed and the second cassette 22 is brought into the loading chamber 220 when the vacuum pressure of the second load lock chamber 260 May be introduced into the unloading chamber 250 after formation. And all substrates 10 received in the first cassette 21 are processed and dechucked from the substrate support 120 and received in the second cassette 22 until the second gate valve 272 and the sixth gate The valve 276 may be closed. Therefore, the substrate processing apparatus 200 according to the first embodiment is configured such that all of the substrates 10 accommodated in the first cassette 21 are processed, dechucked from the substrate support 120 and accommodated in the second cassette 22 The vacuum pressure of the process space connected to the loading chamber 220 to the unloading chamber 250 can be maintained.

Although not shown, a transfer unit for supplying the first cassette 21 to the loading chamber 220 may be disposed between the first load lock chamber 210 and the loading chamber 220, A transfer unit for supplying the second cassette 22 to the unloading chamber 250 may be disposed between the second load lock chamber 260 and the second load lock chamber 260. [ A transfer unit for transferring the substrate 10 from the first cassette 21 to the process chamber 230 may be disposed between the loading chamber 220 and the process chamber 230 and the substrate dechucking chamber 240 A transfer unit for unloading the substrate 10 from the substrate dechucking chamber 240 may be disposed between the substrate dechucking chamber 240 and the unloading chamber 250. [ These transfer units may be provided in the form of a multi-joint transfer robot, or a conveyor connected to the process chamber 230 and the substrate dechucking chamber 240, respectively.

In addition, a source supply device, a gas supply device, a plasma generation device, and the like may be installed in the process chamber 230 according to a process for processing the substrate 10.

Since the internal structure of the substrate dechucking chamber 240 has already been described in the substrate dechucking apparatuses according to the first to third embodiments described above, a detailed description thereof will be omitted.

Hereinafter, a substrate processing method using the substrate processing apparatus according to the first embodiment will be described with reference to the accompanying drawings.

12 is a flowchart showing a substrate processing method according to the first embodiment.

Referring to FIG. 12, a first cassette 21, in which a first gate valve 271 is opened and a plurality of substrates 10 are accommodated, is introduced into a first load lock chamber 210.

The first gate valve 271 is closed and the first load lock chamber 210 is evacuated to form the vacuum pressure inside the first load lock chamber 210. At the same time, the seventh gate valve 277 is opened and the empty second cassette 22 is carried into the second load lock chamber. The seventh gate valve 277 is closed and the second load lock chamber 260 is evacuated so that a vacuum pressure is formed inside the second load lock chamber 260. Vacuum pressure is also formed in the remaining chambers 220, 230, 240, and 250 by exhausting the remaining chambers 220, 230, 240, and 250.

Subsequently, the second gate valve 272 is opened and the first cassette 21 is loaded into the loading chamber 220, the sixth gate valve 276 is opened and the second cassette 22 is opened in the unloading chamber 250). And the second gate valve 272 and the sixth gate valve 276 are both closed. At this time, the closed second gate valve 272 and the sixth gate valve 276 process all the substrates 10 received in the first cassette 21 and are dechucked from the substrate support 120 to form a second cassette 22 Lt; RTI ID = 0.0 > a < / RTI >

Subsequently, the third gate valve 273 is opened, and the substrate 10 accommodated in the first cassette 21 is transferred from the loading chamber 220 to the process chamber 230. The substrate 10 may be supported on a substrate support 120 that is pending in the process chamber 230 and may be transferred and processed in-line by the conveyor 280 (step S110)

Subsequently, the fourth gate valve 274 is opened, and the substrate 10 and the substrate support 120 are transferred into the substrate dechucking chamber 240.

In the substrate dechucking chamber 240, the pressure control chamber 140 as described above is contacted with the substrate support 120 (step S130), and the substrate dechucking chamber 240 and the pressure control chamber 140 The substrate 10 is dechucked from the substrate support 120 by the substrate dechucking method by the pressure difference (step S150)

Subsequently, the fifth gate valve 275 is opened, and the substrate 10 is carried into the unloading chamber 250 and accommodated in the second cassette 22.

When such substrate loading, substrate processing, substrate dechucking, and substrate unloading processes are performed continuously, the processing for all substrates 10 contained in the first cassette 21 is completed and the dechucked All the substrates 10 can be received in the second cassette 22.

When all the substrates 10 are accommodated in the second cassette 22, the sixth gate valve 276 is opened. The second cassette 22 is carried into the second load lock chamber 260 from the unloading chamber 250. At this time, the second load lock chamber 260 maintains the vacuum pressure after the second cassette 22 is supplied, so that it is in a vacuum state as in the unloading chamber 250 (step S26)

Subsequently, after the sixth gate valve 276 is closed, the seventh gate valve 277 is opened and the second cassette 22 is taken out.

Hereinafter, the substrate processing apparatus according to the second embodiment using the substrate dechucking apparatus described above will be described. Since various embodiments of the substrate dechucking apparatus have already been described above, the description of the substrate dechucking apparatus applied to the substrate processing apparatus according to the second embodiment will be omitted below. However, the chamber included in the substrate dechucking apparatus described above may be replaced with a process chamber included in the substrate processing apparatus according to the second embodiment, which will be described below.

13 is a plan view schematically showing a substrate processing apparatus according to the second embodiment.

Referring to FIG. 13, the substrate processing apparatus 300 according to the second embodiment includes a first load lock chamber 310, a loading chamber 320, a transfer chamber 330, a process chamber 340, an unloading chamber 350 and a second load lock chamber 360.

The first load lock chamber 310 is provided with a first gate valve 371 through which the substrate 10 is introduced from the outside. A second gate valve 372 is provided between the first load lock chamber 310 and the loading chamber 320. A third gate valve 373 is provided between the transfer chamber 330 and the loading chamber 320. A fourth gate valve 374 is provided between the transfer chamber 330 and the process chamber 340. A fifth gate valve 375 is provided between the transfer chamber 330 and the unloading chamber 350. A sixth gate valve 376 is provided between the unloading chamber 350 and the second load lock chamber 360. A seventh gate valve 377 is provided in the second load lock chamber 360.

Although the process chamber 340 is shown as being disposed in a single unit in the attached drawings, the process chamber 340 may be formed in the transfer chamber 330 in accordance with the process of the substrate 10 (for example, an organic thin film deposition process) And a gate valve may be additionally provided between the plurality of process chambers and the transfer chamber 330 for interrupting the substrate in and out of each process chamber and interrupting the process gas, the source and the particles.

The chambers 310, 320, 330, 340, 350 and 360 of the substrate processing apparatus 300 according to the second embodiment are arranged in a cluster type and the substrate 10 is arranged in the transfer chamber 330 And can be moved into and out of each chamber by the transfer unit 331. A stage used as a substrate support 120 for supporting the substrate 10 may be disposed in each of the chambers 310, 320, 330, 340, 350, and 360.

The substrate processing apparatus 300 according to the second embodiment includes a plurality of substrates 10 to which a first cassette 21 containing a plurality of substrates 10 is supplied to the first load lock chamber 310, A second cassette 22 which can be accommodated can be supplied to the second load lock chamber 360. The first cassette 21 is brought into the loading chamber 320 after the vacuum pressure of the first load lock chamber 310 is formed and the second cassette 22 is brought into the loading chamber 320 when the vacuum pressure of the second load lock chamber 360 May be introduced into the unloading chamber 350 after formation. And all substrates 10 contained in the first cassette 21 are processed and dechucked from the substrate support 120 and received in the second cassette 22 until the second gate valve 372 and the sixth gate The valve 376 may be closed. Therefore, the substrate processing apparatus 300 according to the second embodiment is configured such that all the substrates 10 accommodated in the first cassette 21 are processed, dechucked from the substrate support 120 and accommodated in the second cassette 22 The vacuum pressure of the process space connected to the loading chamber 320 to the unloading chamber 350 can be maintained.

A transfer unit for supplying the first cassette 21 to the loading chamber 320 may be disposed between the first load lock chamber 310 and the loading chamber 320 and the unloading chamber 350 may be disposed between the first load lock chamber 310 and the loading chamber 320. [ A transfer unit for supplying the second cassette 22 to the unloading chamber 350 may be disposed between the second load lock chamber 360 and the second load lock chamber 360. [ These transfer units can be provided as multi-joint transfer robots.

In addition, an evaporation source, a showerhead, a plasma generator, and the like may be installed in the process chamber 340 according to a process for processing the substrate 10. In the process chamber 340, elements for dechucking the substrate from the substrate support 120 are configured. Elements for dechucking the substrate from the substrate support 120 are described in the first to third embodiments already described above. The substrate dechucking apparatus according to the present invention has been described, so that a detailed description thereof will be omitted.

Hereinafter, a substrate processing method using the substrate processing apparatus according to the second embodiment will be described.

First, the first cassette 21 in which the first gate valve 371 is opened and the plurality of substrates 10 are accommodated is loaded into the first load lock chamber 310 (step S31)

The first gate valve 371 is closed and the first load lock chamber 310 is evacuated to form vacuum pressure inside the first load lock chamber 310.

At the same time, the seventh gate valve 377 is opened and the empty second cassette 22 is carried into the second load lock chamber 360. The seventh gate valve 377 is closed and the second load lock chamber 360 is evacuated so that a vacuum pressure is formed inside the second load lock chamber 360. The exhaust gases from the remaining chambers 320, 330, 340, and 350 are combined to form the vacuum in the remaining chambers 320, 330, 340, and 350.

Subsequently, the second gate valve 372 is opened and the first cassette 21 is loaded into the loading chamber 320, the sixth gate valve 376 is opened and the second cassette 22 is opened in the unloading chamber 350). Both the second gate valve 372 and the sixth gate valve 376 are closed. At this time, the closed second gate valve 372 and the sixth gate valve 376 process all the substrates 10 received in the first cassette 21 and are dechucked from the substrate support 120 to form the second cassette 22 Lt; RTI ID = 0.0 > a < / RTI >

Subsequently, the third gate valve 373 is opened, and the substrate 10 accommodated in the first cassette 21 is carried into the transfer chamber 330.

Subsequently, the fourth gate valve 374 is opened, and the substrate 10 is transferred into the process chamber 340. The fourth gate valve 374 is closed, and the substrate 10 can be supported and processed on the stage in the process chamber 340 (step S32)

When the substrate is processed as described above, the pressure control chamber 140 is brought into contact with the substrate support 120 (step S33) and the pressure difference between the process chamber 340 and the pressure control chamber 140 The substrate 10 is dechucked from the support 120 (step S34)

Subsequently, the fourth gate valve 374 is opened, and the substrate 10 is transferred into the transfer chamber 330. The sixth gate valve 376 is opened and the substrate 10 is carried into the unloading chamber 350 and accommodated in the second cassette 22.

When the substrate loading, the substrate processing, and the substrate unloading process are continuously performed, the processing for all the substrates 10 accommodated in the first cassette 21 is completed, and all of the substrates dechucked from the substrate support 120 May be received in the second cassette 22.

When all the substrates 10 are accommodated in the second cassette 22, the sixth gate valve 376 is opened. The second cassette 22 is transferred from the unloading chamber 350 to the second load lock chamber 360. At this time, the second load lock chamber 360 is in the vacuum state as in the unloading chamber 350 because the vacuum pressure is maintained after the second cassette 22 is supplied (step S35).

Subsequently, after the sixth gate valve 376 is closed, the seventh gate valve 377 is opened and the second cassette 22 is taken out.

The embodiments of the present invention described above and shown in the drawings should not be construed as limiting the technical idea of the present invention. The scope of protection of the present invention is limited only by the matters described in the claims, and those skilled in the art will be able to modify the technical idea of the present invention in various forms. Accordingly, such improvements and modifications will fall within the scope of the present invention as long as they are obvious to those skilled in the art.

10: substrate 21: first cassette
22: second cassette 100: substrate dechucking device
110: chamber 111: gate valve
120: substrate support 121: adhesive member
122: pin hole 130: lift pin
131: lift pin lifting module 132: airtight member
133: diaphragm 140: pressure control chamber
141: chamber elevating module 142: sealing member
200: substrate processing apparatus 210: first load lock chamber
220: loading chamber 230: process chamber
240: substrate dechucking chamber 250: unloading chamber
260: second load lock chamber 300: substrate processing apparatus
310: first load lock chamber 320: loading chamber
330: Transfer chamber 340: Process chamber
350: unloading chamber 360: second load lock chamber

Claims (24)

A substrate support for supporting the substrate;
And a pressure regulating chamber in contact with the substrate support to form a space shielded from the outside, the pressure of the interior of the substrate being adjusted by the pressure difference between the inside and outside of the substrate support so that the substrate is dechucked from the substrate support. Device. The method according to claim 1,
Wherein the pressure regulating chamber is in contact with a surface of the substrate support on which the substrate is supported and is configured to have a lower pressure inside than the outside. The method according to claim 1,
Wherein the pressure regulating chamber is in contact with an opposite surface of the substrate support to which the substrate is supported, and the interior of the pressure regulating chamber is formed at a higher pressure than the outside. The method of claim 3,
Wherein an inert gas is supplied into the pressure regulating chamber. The method according to claim 1,
Further comprising a diaphragm disposed between the substrate support and the substrate and being inflated by a pressure difference between the inside and outside of the pressure control chamber. 6. The method of claim 5,
Further comprising a lift pin formed on the substrate support and configured to move up and down through the pin hole to lift and elevate the substrate relative to the substrate support. The method according to claim 6,
Wherein the diaphragm is mounted at an upper end of the lift pin toward the substrate. (a) a pressure regulating chamber is brought into contact with a substrate support for supporting a substrate to shield the inside of the pressure regulating chamber from the outside, and
(b) dechucking the substrate from the substrate support by a pressure difference inside and outside the pressure control chamber, the pressure inside the pressure adjustment chamber being adjusted. 9. The method of claim 8,
In the step (a), the pressure regulating chamber is in contact with one surface of the substrate support on which the substrate is supported,
Wherein the step (b) comprises forming the pressure control chamber at a lower pressure than the inside of the pressure control chamber. 9. The method of claim 8,
Wherein the step (a) is performed such that the pressure regulating chamber is in contact with the opposite surface of the substrate support to which the substrate is supported,
Wherein the step (b) comprises forming the pressure control chamber at a higher pressure than the outside. 11. The method of claim 10,
Wherein the step (b) comprises supplying an inert gas into the pressure control chamber. 12. The method of claim 11,
Wherein the diaphragm disposed between the substrate support and the substrate is expanded by the pressure difference between the inside and the outside of the pressure control chamber so that the diaphragm presses the substrate. A chamber in which vacuum pressure is maintained;
A substrate support for supporting a substrate within the chamber;
And a pressure control chamber in contact with the substrate support to form a space shielded separately from the interior of the chamber and to adjust the internal pressure so that the substrate is defucked from the substrate support by a pressure difference between the inside and outside of the chamber. / RTI > 14. The method of claim 13,
Wherein the substrate support is a substrate tray that supports the substrate and is transported with the substrate,
Further comprising a conveyor for supporting the substrate support and conveying the substrate support. 15. The method of claim 14,
Wherein the substrate and the substrate support are transported together into a substrate dechucking chamber, wherein the pressure control chamber is disposed in the substrate dechucking chamber. 14. The method of claim 13,
Wherein the substrate support is a stage disposed inside the chamber and supporting the substrate. 14. The method of claim 13,
A first load lock chamber to which a first cassette in which a plurality of the substrates are accommodated is supplied;
A loading chamber coupled to the first load lock chamber to receive the first cassette from the first load lock chamber;
A second load lock chamber to which an empty second cassette is supplied;
And an unloading chamber connected to the second load lock chamber and receiving the second cassette from the second load lock chamber,
Wherein the loading chamber and the unloading chamber are closed from the first load lock chamber and the second load lock chamber while all of the plurality of substrates received in the first cassette are received in the second cassette, Thereby preventing the substrate from being exposed. 14. The method of claim 13,
Wherein the pressure regulating chamber is in contact with one surface of the substrate support on which the substrate is supported and the pressure regulating chamber is formed at a lower pressure than inside the chamber. 14. The method of claim 13,
The pressure regulating chamber
Wherein the pressure regulating chamber is in contact with the opposite surface of the substrate supporting part on which the substrate is supported, and the pressure regulating chamber is formed at a higher pressure than the inside of the chamber. (a) a step in which a substrate is carried into a chamber in which vacuum pressure is maintained and the substrate is supported on a substrate support;
(b) a pressure regulating chamber is contacted to the substrate support to shield the inside of the pressure regulating chamber; and
(c) the pressure inside the pressure regulating chamber is regulated so that the substrate is defucked from the substrate support by a pressure difference between the inside and the outside of the pressure regulating chamber. 21. The method of claim 20,
Wherein the substrate support is provided with a substrate tray that supports the substrate and is transported with the substrate,
Wherein the step (a) is performed while the substrate is transported together with the substrate tray,
Wherein between the step (a) and the step (b), the substrate and the substrate support are transferred to a substrate dechucking chamber. 21. The method of claim 20,
Before the step (a)
A first cassette containing a plurality of said substrates is transferred to a loading chamber through a first load lock chamber and a second cassette for receiving said substrate de-chucked substrate is transferred through a second load lock chamber to an unloading chamber Lt; / RTI >
Wherein the steps (a) to (c)
Wherein the loading chamber and the unloading chamber are respectively shielded from the first load lock chamber and the second load lock chamber while the substrate contained in the first cassette is received in the second cassette, Is prevented. 21. The method of claim 20,
In the step (b), the pressure regulating chamber is in contact with one surface of the substrate support on which the substrate is supported,
Wherein in the step (c), the inside of the pressure regulation chamber is formed at a lower pressure than the inside of the chamber. 21. The method of claim 20,
In the step (b), the pressure regulating chamber is brought into contact with the opposite surface of the substrate supporting part on which the substrate is supported,
Wherein in the step (c), the interior of the pressure regulation chamber is formed at a lower pressure than the inside of the chamber.
KR1020140013910A 2014-02-07 2014-02-07 Apparatus for dechuking substrate, method of dechuking substrate, Apparatus for processing substrate and method of processing substrate using the same KR20150093308A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170108272A (en) * 2016-03-17 2017-09-27 주성엔지니어링(주) Substrate disposition apparatus
KR102132993B1 (en) * 2020-04-27 2020-07-10 (주)볼타오토메이션 Apparatus for preventing deformation of chamber by heat and pressure

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170108272A (en) * 2016-03-17 2017-09-27 주성엔지니어링(주) Substrate disposition apparatus
KR102132993B1 (en) * 2020-04-27 2020-07-10 (주)볼타오토메이션 Apparatus for preventing deformation of chamber by heat and pressure

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