KR20150081723A - Apparatus for manufacturing semiconductor device and method of fabricating the semiconductor device using the same - Google Patents

Abstract

An apparatus for manufacturing a semiconductor device includes a chamber outer wall and an upper cover which limit an internal reaction space, a lift pin which supports an object in the reaction space and can move vertically, and a heat chuck which can move vertically in the lower part of the reaction space.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device manufacturing method,

The present invention relates to a semiconductor manufacturing apparatus and a semiconductor device manufacturing method using the same.

2. Description of the Related Art Generally, an integrated circuit is a device in which a large number of circuit elements such as transistors, resistors, capacitors, inductors, diodes, and the like are integrated at high density on a wafer chip made of silicon (Si) Function. Such an integrated circuit is given a name such as VLSI (Very Large Scale Integrated Circuit) and ULSI (Ultra Large Scale Integrated Circuit) according to the degree of integration. An integrated circuit requires a large number of terminals for the purpose of signal input / output, power supply, etc. due to the characteristics of the integrated circuit.

Conventionally, a lead frame having a plurality of leads is used to connect the above terminals to terminals for inputting / outputting signals or data processed in a circuit integrated in a wafer chip or a die, And used as a package to protect the wafer chip, the lead frame, and the connection parts. However, due to the development of semiconductor manufacturing technology, the degree of integration of integrated circuits has increased sharply, and the number of terminals used for inputting and outputting signals per unit area has been demanded more. As a result, the packaging technology has recently been introduced through the existing SIP (Single Inline Pacakge), DIP (Dual Inline Package), TSOP (Thin Small Outline Package) and QFP (Quad Flat Package) (Ball Grid Array), a CSP (Chip Scale Package), and a C4 (Controlled Collapsed Chip Connection) technique in which a plurality of terminals are drawn out from the entire bottom surface of the package and solder bumps are used as signal transmission paths instead of lead frames Has been used.

Generally, a manufacturing process for forming a solder bump in an integrated circuit package includes applying a flux to a pad where a solder bump of the package is attached, attaching a solder ball, ) Process so that the solder bump is fixedly attached. The flux is a chemical substance including a pad which is a terminal portion of an integrated circuit made of a metal material such as copper (Cu) or nickel (Ni), and a strong acid which removes a metal oxide film formed on the surface of the solder ball. Such fluxes are used in the soldering of common electronic components or circuits and are used in most soldering processes.

However, as the flux is heated during the bonding process, the solvent, which is the solvent component of the flux, is volatilized, and the gasified solvent is poured into the bonding interface between the solder ball to be bonded and the metal pad to be bonded, The void due to the bubbles at the bonding interface lowers the bonding strength of the bonding portion and causes a problem that the bonding between the bonding portion and the bonding portion is broken due to thermal fatigue or the like, . Also, after the bonding process, the flux component remaining in the integrated circuit package is washed with an organic solvent. As the package is miniaturized, the cleaning process may be difficult and the flux component may remain. Since the residual flux component has a corrosive property due to its strong acidity, the transmission characteristics of the signal processed in the integrated circuit may be deteriorated by the corrosion part or cause leakage problems. Furthermore, the organic solvent used in the washing process has been found to be an environmentally harmful substance, and its use is increasingly limited.

Due to such flux problems, a method of performing soldering without using flux has recently been proposed. However, in order to perform soldering without flux, the oxide film removal process, the reflow process, and the cooling process must be performed in separate devices. In the process of transferring a substrate or a wafer from one device to another device, So that the profile of the solder bump or the like may not be formed in a desired shape.

The object of the present invention is to finely control the temperature of an object while allowing an oxide film removing process, a reflow process, and a cooling process for an object such as a substrate or a wafer to be performed in a single device And to provide a semiconductor manufacturing apparatus.

Another problem to be solved by the present application is to provide a method of manufacturing a semiconductor device by using the above-described semiconductor manufacturing apparatus.

A semiconductor manufacturing apparatus according to an example of the present invention includes a chamber outer wall and an upper lid defining an inner reaction space, a lift pin supporting the object in the reaction space and being arranged to be movable up and down, And a heat chuck arranged to be movable.

And a heating block disposed in the upper cover.

And a gas supply unit through which the gas can be supplied into the reaction space through the upper cover. In this case, the gas supply portion may include a first gas supply portion disposed at a center portion of the upper cover, and a second and a third gas supply portion disposed at both edges of the upper cover.

And a lift pin driving unit for moving the lift pin up and down.

And a heat chuck driving unit for moving the heat chuck up and down.

According to an exemplary embodiment of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: a chamber outer wall and an upper lid defining an inner reaction space; a lift pin supporting the substrate in the reaction space, The method comprising the steps of: loading a substrate on a lift pin; and moving the lift pin up and down to separate the gap between the loaded substrate and the top cover And performing the process while adjusting.

The semiconductor manufacturing apparatus may further include a heating block disposed in the upper cover. In this case, heat treatment may be performed after heat is generated from the heating block in the heating process for the substrate and the distance between the substrate and the upper cover is reduced by moving the lift pin upward.

A cooling process may be performed after the gap between the substrate and the upper cover is increased by moving the lift pins downward during the cooling process for the substrate.

The semiconductor manufacturing apparatus may further include a gas supply unit that can supply the gas into the reaction space through the upper cover. In this case, the gas supply portion may include a first gas supply portion disposed at a center portion of the upper cover, and a second and a third gas supply portion disposed at both edges of the upper cover.

According to another example, a method for manufacturing a semiconductor device includes a chamber outer wall, an upper lid having a heating block and a gas supply portion therein and defining an inner reaction space together with the chamber outer wall, and an upper lid supporting the substrate in the reaction space, A method of manufacturing a semiconductor device using a semiconductor manufacturing apparatus including a lift pin arranged to be movable and a heat chuck arranged to be movable up and down below a reaction space, Removing the oxide film on the surface of the solder bump by supplying a reducing gas to the substrate; moving the lift chuck upward to contact the back surface of the substrate; Reflowing the solder bump using a heat chuck, moving the heat chuck downward Over the steps and, and heat chuck and supplying an inert gas to the substrate to be spaced apart and the substrate comprises performing a cooling process.

The step of supplying the reducing gas to the substrate to remove the oxide film on the surface of the solder bump may be performed by setting the pressure of the semiconductor manufacturing apparatus to 0.01 torr to 200 torr.

The step of supplying the inert gas to the substrate spaced apart from the heat chuck to perform the cooling process may be performed by supplying an inert gas through the gas supply unit. The gas supply portion may include a first gas supply portion disposed at the center portion of the upper cover and second and third gas supply portions disposed at both edges of the upper cover. In this case, the step of supplying the reducing gas to the substrate to remove the oxide film on the surface of the solder bump may be performed by supplying the reducing gas through the first gas supplying unit. The step of supplying the inert gas to the substrate spaced apart from the heat chuck to perform the cooling process may be performed by supplying the inert gas through the second and third gas supply units.

According to this example, the temperature control for an object can be finely performed while allowing an oxide film removing process, a reflow process, and a cooling process for an object such as a substrate or a wafer to be performed in one apparatus .

1 is a view showing a semiconductor manufacturing apparatus according to an example.
FIG. 2 is a diagram showing a state in which an object is loaded in the semiconductor manufacturing apparatus of FIG. 1; FIG.
3 is a diagram showing a state in which a lift pin is moved upward in the semiconductor manufacturing apparatus of FIG.
FIG. 4 is a view showing a state in which the heating chuck is moved downward in the semiconductor manufacturing apparatus of FIG. 1. FIG.
FIGS. 5 to 9 are diagrams for explaining a method of manufacturing a semiconductor device using the semiconductor manufacturing apparatus of FIG.

1 is a view showing a semiconductor manufacturing apparatus according to an example. Referring to FIG. 1, a semiconductor manufacturing apparatus 100 according to the present embodiment includes a chamber outer wall 110 and an upper lid 130, a reaction chamber 120, Lift pins 171 and 172, and a heat chuck 160 arranged to be movable up and down below the reaction space 120.

The chamber outer wall 110 and the top lid 130 define an internal reaction space 120. The upper lid 130 is provided with gas supply portions 141, 142 and 143. The gas supply units 141, 142, and 143 include a first gas supply unit 141 and second and third gas supply units 142 and 143. The first gas supply unit 141 is disposed at the center of the upper lid 130. The second and third gas supply portions 142 and 143 are disposed on both edges of the upper cover 130. Although not shown in the drawing, the gas supply units 141, 142, and 143 are connected to a gas supply pipe passing through the upper cover 130, and the gas can be supplied into the reaction space 120 through the gas supply pipe. A heating block 150 is disposed in the upper lid 130. In this example, the heating block 150 is disposed in the form of a plate, but it may be disposed in another form other than the plate form as an example only.

A heating chuck 160 is disposed below the semiconductor manufacturing apparatus 100. Although not shown in the drawing, a heating means is disposed in the heating chuck 160. The heating chuck 160 may be made of a material having a high thermal conductivity. A heating chuck driving part 162 is disposed below the heating chuck 160. The heating chuck driver 162 is arranged to be movable up or down. As the heating chuck driver 162 moves up or down, the heating chuck 160 also moves up or down in association with the heating chuck driver 162. [ The lift pins 171 and 172 are disposed so as to penetrate through the heating chuck 160 and protrude above the upper surface of the heating chuck 160 at an end thereof. The other end of the lift pins 171 and 172 is connected by a lift pin connection part 170 and the lift pin connection part 170 is connected to a lift pin driving part 177. The lift pin driver 177 is arranged to be movable up or down. As the lift pin driving portion 177 moves up or down, the lift pins 171 and 172 also move upward or downward in association with the lift pin driving portion 177.

According to the semiconductor manufacturing apparatus 100, both the reflow process and the cooling process at a predetermined temperature can be performed. In particular, in the fluxless soldering process, the oxide film removing process, the reflow bumping process, and the cooling process can be performed in-situ. That is, the temperature in the reaction space 120 is adjusted by using the heating block 150 and the heating chuck 160 in the upper lid 130, and at least one of the heating chuck 160 and the lift pins 171 and 172 One can be moved up or down so that the temperature of an object such as a substrate or a wafer is finely controlled. In particular, in order to induce a reaction to an object by supplying a specific gas such as a process of removing an oxide film in a fluxless soldering process, the lift pins 171 and 172 are raised so that the object is brought close to the gas supply units 141, 142 and 143 The reaction through the gas supply can be efficiently performed and the reaction can be performed optimally by precisely controlling the temperature of the object using the heating block 150 in the upper lid 130. [ When a reflow process at a high temperature is to be performed, such as a reflow bumping process in a fluxless soldering process, the heating chuck 160 is moved to bring the object into contact with the heating chuck 160, The reflow process can be efficiently performed. In addition, in order to perform the cooling process at a low temperature, the object may be separated from the heating chuck 160 as much as possible, and then the cooling gas may be supplied to the object to efficiently perform the cooling process.

FIG. 2 is a view showing a state where an object is loaded in the semiconductor manufacturing apparatus of FIG. 1, and FIG. 3 is a diagram showing a state in which a lift pin is moved upward in the semiconductor manufacturing apparatus of FIG. FIG. 4 is a view showing a state in which the heating chuck moves downward in the semiconductor manufacturing apparatus of FIG. 1. FIG. 2 to 4, the same reference numerals as those in FIG. 1 denote the same elements, and a duplicate description will be omitted. First, referring to FIG. 2, when an object such as a substrate 200 is loaded into the semiconductor manufacturing apparatus 100, it is supported by lift pins 171 and 172. At this time, the upper surface of the substrate 200 and the lower surface of the upper lid 130 are spaced apart from each other by a first distance D1, and the lower surface of the substrate 200 and the upper surface of the heating chuck 160 are spaced apart from each other by a second distance D2. Referring to FIG. 3, when the lift pins 171 and 172 are moved upward after the substrate 200 is loaded, the upper surface of the substrate 200 and the lower surface of the upper lid 130 are spaced apart from each other by a first distance D1 The lower surface of the substrate 200 and the upper surface of the heating chuck 160 are spaced apart from each other by a fourth gap D4 that is larger than the second gap D2. Movement of the lift pins 171 and 172 can be performed by moving the lift pin driving portion 177, as indicated by the arrow 301 in the drawing. Referring to FIG. 4, after the substrate 200 is loaded, as shown by the arrow 302 in the drawing, the heating chuck 160 is moved downward while maintaining the positions of the lift pins 171 and 172 . The upper surface of the substrate 200 and the lower surface of the upper lid 130 maintain the first distance D1 while the lower surface of the substrate 200 and the upper surface of the heating chuck 160 are spaced apart from each other by the second gap (D5), which is larger than the second gap (D2).

As described above, the position of the substrate 200 can be freely adjusted in the vertical direction by moving any one of the heating chuck 160 and the lift pins 171 and 172 in the vertical direction. In some cases, the heating chuck 160 and the lift pins 171 and 172 may be moved in the same or opposite directions. The distance between the substrate 200 and the heating chuck 160 is controlled from 0 mm to 100 mm which are in contact with each other through the movement of the heating chuck 160 in one example. The gap between the substrate 200 and the upper lid 130 is controlled from 1 mm to 100 mm through the movement of the lift pins 171 and 172. Accordingly, when the heating chuck 160 and the lift pins 171 and 172 are moved in opposite directions, the position of the substrate 200 can be changed up to approximately 200 mm.

FIGS. 5 to 9 are diagrams for explaining a method of manufacturing a semiconductor device using the semiconductor manufacturing apparatus of FIG. In this example, a case where the fluxless soldering process and the cooling process for the substrate having the solder bumps are performed using the semiconductor manufacturing apparatus 100 according to the present embodiment will be exemplified. First, referring to FIG. 5, a substrate 200 having solder bumps is loaded on lift pins 171 and 172. In this state, the upper surface of the substrate 200 is separated from the lower surface of the upper lid 130 by the sixth gap D6. 6, the lift pins 171 and 172 are moved upwards, as indicated by the arrow 303 in the figure, so that the distance between the upper surface of the substrate 200 and the lower surface of the upper lid 130 And a seventh interval (D7) smaller than the sixth interval (D6). Referring to FIG. 7, a reducing gas is supplied to the substrate 200 through the first gas supply unit 141 to perform an oxide film removing process, as indicated by an arrow 400 in the drawing. The reducing gas supplied to the substrate 200 removes an oxide film, for example, a natural oxide film, on the surface of the solder bumps of the substrate 200. In this process, the temperature of the substrate 200 is adjusted to a suitable temperature, for example, 150 to 200 ° C by using the heating block 150 in the upper lid 130. And the pressure in the reaction space 120 is about 0.01 torr to 200 torr.

8, the heat chuck 160 is moved upward so that the upper surface of the heat chuck 160 and the back surface of the substrate 200 are brought into contact with each other, as indicated by the arrow 304 in the drawing. In this process, since the positions of the lift pins 171 and 172 are not changed, the upper surface of the substrate 200 and the lower surface of the upper lid 130 maintain the seventh gap D7. In this state, the solder bumps of the substrate 200 are reflowed by using the heat chuck 160. The reflow process can be performed by setting the temperature of the substrate 200 to approximately 200 캜 to 300 캜. The heating block 150 in the upper lid 130 may be used in addition to the heat chuck 160 to increase the temperature of the substrate 200.

9, the heat chuck 160 and the lift pins 171 and 172 are all moved downward, as indicated by arrows 305 and 306 in the figure, The lower surface of the substrate 200 and the upper surface of the heat chuck 160 are spaced from each other by the ninth gap D9 so that the interval between the lids 130 is an eighth interval D8 larger than the seventh interval D7, . In some cases, the lift pins 171 and 172 may not be moved at this stage. Next, an inert gas is supplied to the substrate 200 to perform a cooling process, as indicated by an arrow 500 in the drawing. In one example, the inert gas may be supplied through the second and third gas supply portions 142, 143.

100 ... semiconductor manufacturing apparatus 110 ... outer wall
120 ... reaction space 130 ... upper cover
141 ... first gas supply unit 142 ... second gas supply unit
143 ... third gas supply unit 150 ... heating block
160 ... a heating chuck 162 ... a heating chuck driving part
171, 172 ... Lift pin 175 ... Lift pin connection
177 ... lift pin driving part

Claims (18)

A chamber outer wall and an upper lid defining a reaction space therein;
A lift pin supporting the object in the reaction space, the lift pin being arranged to be movable up and down; And
And a heat chuck arranged to be movable up and down in the lower part of the reaction space. The method according to claim 1,
And a heating block disposed in the upper lid. The method according to claim 1,
And a gas supply unit that is capable of supplying gas into the reaction space through the upper cover. The method of claim 3,
Wherein the gas supply portion includes a first gas supply portion disposed at a center portion of the upper cover and second and third gas supply portions disposed at both edges of the upper cover. The method according to claim 1,
Further comprising a lift pin driving unit for moving the lift pin up and down. The method according to claim 1,
And a heat chuck driving unit for moving the heat chuck up and down. A reaction chamber having a reaction chamber and a reaction chamber, a chamber outer wall and an upper chamber defining a reaction space inside the reaction space, a lift pin supporting the substrate in the reaction space and being arranged to be movable up and down, A method for manufacturing a semiconductor device using a semiconductor manufacturing apparatus,
Loading a substrate onto the lift pins; And
And moving the lift pin up and down to adjust the spacing between the loaded substrate and the top lid. 8. The method of claim 7,
The semiconductor manufacturing apparatus further comprises a heating block disposed in the upper cover. 9. The method of claim 8,
Wherein the heating process is performed after generating heat from the heating block during the heating process for the substrate and moving the lift pin upward to reduce the space between the substrate and the upper cover. 9. The method of claim 8,
Wherein the cooling fin is performed by moving the lift pin downward during a cooling process for the substrate to increase the space between the substrate and the upper cover. 8. The method of claim 7,
Wherein the semiconductor manufacturing apparatus further comprises a gas supply unit that can supply gas into the reaction space through the upper cover. 10. The method of claim 9,
Wherein the gas supply portion includes a first gas supply portion disposed at a center portion of the upper cover and second and third gas supply portions disposed at both edges of the upper cover. An upper cover having a chamber outer wall, a chamber outer wall, and a heating block and a gas supply unit, the inner wall defining a reaction space therein; a lift pin supporting the substrate in the reaction space, And a heat chuck disposed so as to be movable up and down in the lower part of the reaction space, the method comprising the steps of:
Loading a substrate having solder bumps on the lift pins;
Moving the lift pins upward to reduce spacing between the substrate and the top cover;
Supplying a reducing gas to the substrate to remove an oxide film on a surface of the solder bump;
Moving the heat chuck upward so as to contact the back surface of the substrate;
Reflowing the solder bump using the heat chuck;
Moving the heat chuck downward to be spaced apart from the substrate; And
And performing a cooling process by supplying an inert gas to the substrate spaced apart from the heat chuck. 14. The method of claim 13,
Wherein the step of supplying a reducing gas to the substrate to remove the oxide film on the surface of the solder bump is performed by setting the pressure of the semiconductor manufacturing apparatus to 0.01 torr to 200 torr. 14. The method of claim 13,
And performing a cooling process by supplying an inert gas to the substrate spaced apart from the heat chuck is performed by supplying an inert gas through the gas supply unit. 16. The method of claim 15,
Wherein the gas supply portion includes a first gas supply portion disposed at a center portion of the upper cover and second and third gas supply portions disposed at both edges of the upper cover. 17. The method of claim 16,
Wherein the step of supplying the reducing gas to the substrate to remove the oxide film on the surface of the solder bump is performed by supplying the reducing gas through the first gas supplying unit. 17. The method of claim 16,
Wherein performing the cooling process by supplying the inert gas to the substrate spaced apart from the heat chuck is performed by supplying the inert gas through the second and third gas supply units.

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