KR20150043719A - Method for transferring two dimensional structure mateiral - Google Patents

Method for transferring two dimensional structure mateiral Download PDF

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Publication number
KR20150043719A
KR20150043719A KR20130122447A KR20130122447A KR20150043719A KR 20150043719 A KR20150043719 A KR 20150043719A KR 20130122447 A KR20130122447 A KR 20130122447A KR 20130122447 A KR20130122447 A KR 20130122447A KR 20150043719 A KR20150043719 A KR 20150043719A
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KR
South Korea
Prior art keywords
layer
dimensional structure
material layer
structure material
support
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KR20130122447A
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Korean (ko)
Inventor
최성율
양상윤
정대율
유찬학
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한국과학기술원
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Priority to KR20130122447A priority Critical patent/KR20150043719A/en
Publication of KR20150043719A publication Critical patent/KR20150043719A/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
    • B41M5/00—Duplicating or marking methods; Sheet materials for use therein
    • B41M5/025—Duplicating or marking methods; Sheet materials for use therein by transferring ink from the master sheet
    • B41M5/03—Duplicating or marking methods; Sheet materials for use therein by transferring ink from the master sheet by pressure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
    • B41M5/00—Duplicating or marking methods; Sheet materials for use therein
    • B41M5/26—Thermography ; Marking by high energetic means, e.g. laser otherwise than by burning, and characterised by the material used
    • B41M5/40—Thermography ; Marking by high energetic means, e.g. laser otherwise than by burning, and characterised by the material used characterised by the base backcoat, intermediate, or covering layers, e.g. for thermal transfer dye-donor or dye-receiver sheets; Heat, radiation filtering or absorbing means or layers; combined with other image registration layers or compositions; Special originals for reproduction by thermography
    • B41M5/42—Intermediate, backcoat, or covering layers
    • B41M5/44—Intermediate, backcoat, or covering layers characterised by the macromolecular compounds

Abstract

Provided is a method for transferring a 2D structural material layer, which includes the steps of: touching a support layer to the 2D structural material layer stacked on a metal layer; touching a support substrate made of a material which is different from that of the support layer in the previous step to the support layer in the previous step; separating the 2D structural material layer from the metal layer by moving the support substrate; transferring the 2D structural material layer on a second substrate by using the support substrate; and manufacturing the 2D structural material layer stacked on the second substrate by removing the support layer. A physical coherence between the support layer and the 2D structural material layer is stronger than a physical coherence between the metal layer and the 2D structural material layer.

Description

[0001] The present invention relates to a two-dimensional structure material layer transfer method,

The present invention relates to a method of transferring a two-dimensional structure material layer, and more particularly, to a method of transferring a two-dimensional structure material layer using a support layer having a strong adhesion to a two- To a method of transferring a layer of a two-dimensional structure material capable of effectively separating a structure material layer from a metal.

Two-dimensional structural materials such as hexagonal-boron nitride (h-BN), also referred to as graphene and white graphene, are produced in a variety of ways, but it is known to be particularly effective to deposit by chemical vapor deposition on catalytic metals.

Korean Patent Laid-Open No. 10-2011-0031864 discloses a graphene manufacturing method for growing graphene on a metal catalyst layer and removing the grown graphene by an etching process. However, in the case of the etching process, there is a problem that process control is difficult, and there is a high possibility that the two-dimensional material layer such as graphene is not completely removed from the metal catalyst layer.

Further, in the prior art, a transfer substrate such as PDMS or PMMA is directly contacted with the two-dimensional material layer, and thus the graphene layer separated according to the etching process is fixed to the transfer substrate, . However, in this case, the transfer substrate material remains on the surface of the graphene layer, which is an impurity of the finally obtained graphene layer.

Therefore, a problem to be solved by the present invention is to provide a novel two-dimensional structure which can minimize the possibility that a material used in a transfer process becomes a residual material of a two-dimensional functional layer such as graphene, And a method of transferring the material layer.

According to an aspect of the present invention, there is provided a method for fabricating a semiconductor device, comprising: contacting a support layer to a two-dimensional structure material layer stacked on a metal layer; Contacting the support layer with a support substrate made of a material different from the support layer; Moving the support substrate to separate the metal layer and the two-dimensional structure material layer; Transferring the two-dimensional structure material layer to the second substrate using the supporting substrate; And removing the support layer to produce a layer of two-dimensional material stacked on the second substrate, wherein a physical bonding force between the support layer and the two-dimensional structure material layer is established between the metal layer and the two- The two-dimensional structure material layer transfer method is characterized in that the two-dimensional structure material layer transfer method is stronger than the physical bonding force between the two-dimensional structure material layer.

In one embodiment of the present invention, in the step of separating the metal layer and the two-dimensional structure material layer by moving the support substrate, the support layer and the two-dimensional structure material layer are not separated.

In one embodiment of the present invention, the two-dimensional structure material layer is grown on the metal layer.

In one embodiment of the present invention, the two-dimensional structure material layer includes at least one material selected from the group consisting of graphene, h-BN, and a transition metal decalcogenide-based compound.

In one embodiment of the present invention, the step of removing the support layer proceeds in a non-wet manner.

In one embodiment of the present invention, the non-wet method is a thermal method.

In one embodiment of the present invention, the support layer is polyvinyl acetate and the support substrate is polydimethylsiloxane.

In one embodiment of the present invention, the two-dimensional structure material layer is made of a two-dimensional graphite structure.

In one embodiment of the present invention, the metal layer is deposited on the first substrate.

In one embodiment of the present invention, the transferred two-dimensional structure material layer region is determined according to the lamination region of the supporting layer.

According to the present invention, a support layer made of a separate polymer is used between the two-dimensional structure material layer and the support substrate, and the support layer has a strong bond with the two-dimensional structure material layer. When the support substrate is physically moved, And the two-dimensional structure material layer, the two-dimensional structure material layer is physically separated from the grown metal catalyst layer. Thus, a more predictable and controllable material layer transfer is possible compared to the prior art of removing metal through a wet etching process. Furthermore, since the removal of the support layer also proceeds in a non-wetting manner, the problem that some of the materials of the transfer substrate remain on the two-dimensional structure material layer can be effectively solved.

1 to 5 are views illustrating a method of transferring a two-dimensional structure material layer according to an embodiment of the present invention.
FIG. 6 is a photograph showing the transfer of graphene using polyvinyl acetate (PVA) as a supporting layer according to an embodiment of the present invention, and FIG. 7 is a photograph of the PDMS transfer substrate It is a photograph of a warrior with graphene.
8 is a Raman spectroscopic experiment of graphene transferred using polyvinyl acetate (PVA) as a support layer according to an embodiment of the present invention.
9 is a cross-sectional schematic diagram of a process of transferring only a two-dimensional structure material layer of a desired region among the stacked two-dimensional structure material layers.
10 is a photograph of the result of an experiment in which h-BN is used instead of graphene as a layer of two-dimensional structure material and transferred to a desired substrate in the manner shown in Figs. 1 to 5. Fig.

Hereinafter, the present invention will be described in detail with reference to the drawings. The following embodiments are provided by way of example so that those skilled in the art can fully understand the spirit of the present invention. Therefore, the present invention is not limited to the embodiments described below, but may be embodied in other forms. In the drawings, the width, length, thickness, etc. of components may be exaggerated for convenience. Like reference numerals designate like elements throughout the specification. In addition, abbreviations displayed throughout this specification should be interpreted to the extent that they are known and used in the art unless otherwise indicated herein.

In order to solve the problems of the prior art described above, the present invention provides a two-dimensional structure material layer such as graphene, h-BN or a layered structure of a transition metal decalcogenide-based compound (for example, MoS2 MoSe2, WS2, WSe2) And another support layer is used between the two-dimensional structure material layer. At this time, the support layer provides a strong bonding force to the two-dimensional structure material layer stacked on the metal, and the two-dimensional structure material layer stacked on the metal due to the strong bonding force can be effectively separated from the metal have.

1 to 5 are views illustrating a method of transferring a two-dimensional structure material layer according to an embodiment of the present invention.

Referring to Figures 1-5, a first substrate 110 is shown that is capable of withstanding a high temperature semiconductor process such as silicon oxide. A separate metal layer 120 may be provided on the first substrate 110 to function as a catalyst for growing a two-dimensional structure material layer such as graphene. In an embodiment of the present invention, Which is a catalyst for growing graphene, which is a layer of dimensional material. However, the metal layer itself such as a metal foil without the first substrate 110 may be used as a catalyst substrate for growing the two-dimensional structure material layer.

A two-dimensional structure material layer 130 grown on the metal layer 120 is provided on the metal layer 120. In an embodiment of the present invention, the two-dimensional structure material layer 130 is graphene. In the example, the two-dimensional structure material layer 130 was h-BN. The method of growing the two-dimensional structure material layer 130 according to an embodiment of the present invention is according to the prior art, and the method of growing the two-dimensional structure material layer 130 in the present invention is not limited to a specific example.

The support layer 140 is laminated on the two-dimensional structure material layer 130. In one embodiment of the present invention, the support layer is coated with polyvinyl acetate on the two-dimensional structure material layer 130 , And are laminated in such a manner as to be hardened and cured.

Referring to FIG. 2, the supporting substrate 150 is in contact with the supporting layer 140. The supporting substrate 150 is a material different from the supporting layer 140. In one embodiment of the present invention, 150) was polydimethylsiloxane (PDMS).

Referring to FIGS. 3 and 4, the support substrate 150 is moved, thereby separating the two-dimensional structure material layer 130 from the underlying metal layer 120. For this purpose, in the present invention, the bonding force between the two-dimensional structure material layer 140 and the support layer 140 is important. The bonding force between the two-dimensional structure material layer 130 and the support layer 140, The bonding strength between the layer 130 and the metal layer 120 should be stronger. That is, unlike the conventional technique using only a support substrate, the present inventors use a separate support layer 140 between the support substrate and the two-dimensional structure material layer for enhancing bonding between the support substrate and the two-dimensional structure material layer, In one embodiment of the present invention, the support layer 140 is a polyvinyl acetate (PVA), which is a polar polymer, and the polyvinyl acetate is a mixture of graphene (i.e., a two-dimensional structure material layer) and a transfer substrate Lt; / RTI >

5, the supporting substrate 150 is moved to transfer the two-dimensional structure material layer 130 to a desired transfer target substrate (for example, a flexible substrate 160), and then the supporting layer 150 is removed, The support substrate is separated from the transferred two-dimensional structure material layer 130. In one embodiment of the present invention, the removal of the support layer may be carried out in a non-wet manner without the use of a chemical, for example the support layer may be removed in a thermal manner. In this case, the supporting layer in which the bonding force is weakened due to the application of heat can be simply washed as water, not a chemical. In this case, residues do not remain on the two-dimensional structure material layer 130.

FIG. 6 is a photograph showing the transfer of graphene using polyvinyl acetate (PVA) as a supporting layer according to an embodiment of the present invention, and FIG. 7 is a photograph of the PDMS transfer substrate It is a photograph of a warrior with graphene.

Referring to Figures 6 and 7, it can be seen that when using polyvinyl acetate (PVA) as the support layer in accordance with the present invention, there are fewer residues on the graphene after the final cleaning.

8 is a Raman spectroscopic experiment of graphene transferred using polyvinyl acetate (PVA) as a support layer according to an embodiment of the present invention.

Referring to FIG. 8, after transfer, a region where graphene remained on copper was found. The Raman result shows that the transferred graphene is a single layer with low degradation.

9 is a cross-sectional schematic diagram of a process of transferring only a two-dimensional structure material layer of a desired region among the stacked two-dimensional structure material layers.

Referring to FIG. The polymer supporting layer 230 is selectively laminated only on a specific region of the two-dimensional structure material layer 220 grown in the metal catalyst layer 210 and is separated by the supporting substrate 240. In this case, the two-dimensional structure material layer exhibits a stronger bonding force with respect to the support layer than the metal layer, so that the desired two-dimensional structure material layer is transferred to the target substrate 250 to be transferred in a dry manner. Therefore, in one embodiment of the present invention, the transferred two-dimensional structure material layer region may be determined depending on the lamination region of the supporting layer.

10 is a photograph of the result of an experiment in which h-BN is used instead of graphene as a layer of two-dimensional structure material and transferred to a desired substrate in the manner shown in Figs. 1 to 5. Fig.

Referring to FIG. 10, the h-BN layer transferred onto the SiO 2 substrate can be identified according to the dry method according to the present invention.

As described above, the present invention uses a support layer made of a separate polymer between the two-dimensional structure material layer and the support substrate, and the support layer strongly bonds with the two-dimensional structure material layer. Thus, when physically moving the support substrate for device transfer, due to the strong coupling between the support layer and the two-dimensional structure material layer, the two-dimensional structure material layer is physically effectively separated from the grown metal catalyst layer, In contrast to the prior art of removing metals through the process, more predictable and controllable material layer transfer is possible. Furthermore, since the removal of the support layer also proceeds in a non-wetting manner, the problem that some of the substances of the transfer substrate remain on the two-dimensional structure material layer can be effectively solved

Although the present invention has been described with reference to the above embodiments, the present invention is not limited thereto. It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.

Claims (10)

Contacting the support layer with a layer of the two-dimensional structure material stacked on the metal layer;
Contacting the support layer with a support substrate made of a material different from the support layer;
Moving the support substrate to separate the metal layer and the two-dimensional structure material layer;
Transferring the two-dimensional structure material layer to the second substrate using the supporting substrate;
And removing the support layer to produce a two-dimensional material layer stacked on the second substrate, wherein a physical bonding force between the support layer and the two-dimensional structure material layer is between the metal layer and the two- Is stronger than the physical bonding force of the two-dimensional structure material layer. 2. The method of claim 1, wherein in separating the metal layer and the two-dimensional structure material layer by moving the support substrate,
Wherein the support layer and the two-dimensional structure material layer are not separated. The method according to claim 1,
Wherein the two-dimensional structure material layer is grown on the metal layer. The method according to claim 1,
Wherein the two-dimensional structure material layer comprises at least one material selected from the group consisting of graphene, h-BN, and transition metal decalcogenide-based compounds. The method according to claim 1,
Wherein the step of removing the support layer proceeds in a non-wet manner. 6. The method of claim 5,
Wherein the non-wet process is a thermal process. The method according to claim 1,
Wherein the support layer is polyvinyl acetate, and the support substrate is polydimethylsiloxane. The method according to claim 1,
Wherein the two-dimensional structure material layer is made of a two-dimensional graphite structure. The method according to claim 1,
Wherein the metal layer is laminated on the first substrate. The method according to claim 1,
Wherein the transferring two-dimensional structural material layer region is determined according to the lamination region of the support layer.


KR20130122447A 2013-10-15 2013-10-15 Method for transferring two dimensional structure mateiral KR20150043719A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180039999A (en) * 2016-10-11 2018-04-19 성균관대학교산학협력단 Transcription method of two dimensional nano thinlayer
KR20190035171A (en) * 2017-09-26 2019-04-03 한양대학교 산학협력단 Transition method and device for 2-dimensional material
CN110954570A (en) * 2019-11-11 2020-04-03 华东师范大学 Method for stripping two-dimensional material grown on sapphire substrate by temperature control bubbling

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180039999A (en) * 2016-10-11 2018-04-19 성균관대학교산학협력단 Transcription method of two dimensional nano thinlayer
KR20190035171A (en) * 2017-09-26 2019-04-03 한양대학교 산학협력단 Transition method and device for 2-dimensional material
CN110954570A (en) * 2019-11-11 2020-04-03 华东师范大学 Method for stripping two-dimensional material grown on sapphire substrate by temperature control bubbling
CN110954570B (en) * 2019-11-11 2020-08-04 华东师范大学 Method for stripping two-dimensional material grown on sapphire substrate by temperature control bubbling

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