KR20150014352A - Method of forming nano structure using nano-imprint - Google Patents

Method of forming nano structure using nano-imprint Download PDF

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Publication number
KR20150014352A
KR20150014352A KR1020140026932A KR20140026932A KR20150014352A KR 20150014352 A KR20150014352 A KR 20150014352A KR 1020140026932 A KR1020140026932 A KR 1020140026932A KR 20140026932 A KR20140026932 A KR 20140026932A KR 20150014352 A KR20150014352 A KR 20150014352A
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KR
South Korea
Prior art keywords
resist layer
nanostructure
forming
substrate
mold
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KR1020140026932A
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Korean (ko)
Inventor
위정섭
이태걸
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한국표준과학연구원
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Priority to PCT/KR2014/002233 priority Critical patent/WO2015016453A1/en
Publication of KR20150014352A publication Critical patent/KR20150014352A/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B82B3/0095—Manufacture or treatments or nanostructures not provided for in groups B82B3/0009 - B82B3/009

Abstract

A method of forming a nanostructure using a nanoimprint according to an embodiment of the present invention includes: forming first and second resist layers sequentially on a substrate; Preparing a mold including a nanopattern extending from the body portion and the body portion and changing the size of the cross-section; Pressing the mold onto the second resist layer so that the nano-pattern is inserted into the second resist layer, thereby forming a pattern region to which the nano-pattern is transferred; Selectively etching the first resist layer to expose the substrate in the pattern region after removal of the mold; And forming a nanostructure on the substrate using the second resist layer as a mask layer.

Description

METHOD FOR FORMING NANO STRUCTURE USING NANO-IMPRINT [0002]

The present invention relates to a method of forming a nanostructure using a nanoimprint, and more particularly, to a method of forming a fine pattern and a nanoparticle using the nanoimprint process.

2. Description of the Related Art [0002] In recent years, in accordance with the tendency of electronic products to be thin and light, it is required to form nanostructures including fine patterns in electronic devices and substrates included in electronic products. Accordingly, there is a demand for a method of forming a new fine pattern that can overcome the limitation of photolithography, which is one of the techniques of fine patterning.

The nano-imprint technique has been proposed as a technique for forming a fine pattern, and it is possible to pattern a nano-level pattern of 100 nm or less on a substrate. In the nanoimprint technique, after a photocurable resin or a thermosetting resin is applied on a substrate, a mold including a nano-scale irregularity made of a relatively strong material is pressed on the applied resin layer, and ultraviolet rays or heat And then transferring the pattern onto the substrate as if it were a paint film by curing it.

One of the technical problems to be solved by the technical idea of the present invention is to provide a method of forming a nanostructure using a nanoimprint capable of forming nanostructures of various sizes from one mold.

According to an embodiment of the present invention, there is provided a method of forming a nanostructure using a nanoimprint, comprising: sequentially forming first and second resist layers on a substrate; Preparing a mold including a body part and a nano pattern extending from the body part and having a size varying in cross section; Pressing the mold on the second resist layer so that the nano pattern is inserted into the second resist layer to form a pattern region to which the nano pattern is transferred; Selectively etching the first resist layer to expose the substrate in the pattern area after removing the mold; And forming the nanostructure on the substrate using the second resist layer as a mask layer.

In some embodiments of the present invention, in the step of forming the pattern region, the mold may penetrate the second resist layer and be inserted into at least a part of the first resist layer.

In some embodiments of the present invention, in the step of forming the pattern region, the mold is inserted only into the second resist layer, and after the mold is removed, etching the second resist layer so that the pattern area is expanded As shown in FIG.

In some embodiments of the present invention, in the step of selectively etching the first resist layer, an undercut may be formed under the second resist layer.

In some embodiments of the present invention, the size of the nanostructure is determined by the size of the nanopattern at the interface between the first resist layer and the second resist layer in the step of forming the pattern area to which the nanopattern is transferred Can be determined.

In some embodiments of the present invention, the size of the nanostructure may be selected such that after the step of selectively etching the first resist layer, the removal of the second resist layer at the interface between the first resist layer and the second resist layer Lt; RTI ID = 0.0 > region. ≪ / RTI >

In some embodiments of the present invention, the size of the nanostructure can be controlled by the relative thickness of the first and second resist layers.

In some embodiments of the present invention, the nanopattern may be triangular in cross section in one direction perpendicular to the body portion.

In some embodiments of the present invention, the step of forming the pattern region to which the nanopattern is transferred may include a step of curing the first and second resist layers using heat or light.

In some embodiments of the present invention, the method may further comprise etching at least a portion of the substrate using the nanostructure.

In some embodiments of the present invention, in the step of forming the nanostructure, the substance forming the nanostructure may be controlled to be deposited on the substrate at an angle with respect to the substrate.

In some embodiments of the present invention, the substrate includes a soluble layer formed in an upper region where the first resist layer is formed, and the method of forming a nanostructure using the nanoimprint includes: Infiltrating the solution; And recovering the nanostructure.

According to an embodiment of the present invention, there is provided a method of forming a nanostructure using a nanoimprint, comprising: sequentially forming first and second resist layers on a substrate; Preparing a mold including a nanopattern having a three-dimensional shape whose cross-sectional area gradually changes; Pressing the mold on the second resist layer to transfer the nano pattern; Selectively etching at least a portion of the exposed first and second resist layers after removing the mold; And forming the nanostructure on the substrate using the second resist layer as a mask layer.

There is provided a method of forming a nanostructure using a nanoimprint capable of forming nanostructures of various sizes in one mold by controlling the relative thickness of the resist layer by using a nano pattern in which the resist layer and the cross-sectional size of the multilayer are changed .

The various and advantageous advantages and effects of the present invention are not limited to the above description, and can be more easily understood in the course of describing a specific embodiment of the present invention.

FIGS. 1A to 1F are schematic views illustrating steps of a method of forming a nanostructure using a nanoimprint according to an embodiment of the present invention.
FIGS. 2A to 2C are schematic views showing steps of a method for forming a nanostructure using a nanoimprint according to an embodiment of the present invention.
3 is a cross-sectional view illustrating a method of forming a nanostructure using a nanoimprint according to an embodiment of the present invention.
4A to 4C are perspective views schematically showing a mold usable in a method of forming a nanostructure using a nanoimprint according to an embodiment of the present invention.
5A to 5C are plan views schematically illustrating a nanostructure formed by a method of forming a nanostructure using a nanoimprint according to an embodiment of the present invention.
6 is an electron micrograph of a mold that can be used in a method of forming a nanostructure using a nanoimprint according to an embodiment of the present invention.
FIGS. 7A to 7C are views schematically showing a method of forming a nanostructure using a nanoimprint according to an embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

The embodiments of the present invention may be modified into various other forms or various embodiments may be combined, and the scope of the present invention is not limited to the embodiments described below. Further, the embodiments of the present invention are provided to more fully explain the present invention to those skilled in the art. Accordingly, the shapes and sizes of the elements in the drawings may be exaggerated for clarity of description, and the elements denoted by the same reference numerals in the drawings are the same elements.

FIGS. 1A to 1F are schematic views illustrating steps of a method of forming a nanostructure using a nanoimprint according to an embodiment of the present invention.

Referring to FIG. 1A, a step of sequentially forming first and second resist layers 112 and 114 on a substrate 100 is performed.

The substrate 100 is a layer on which the nanostructures are formed, and may correspond to a substrate of an electronic device or a substrate of an electronic device according to an embodiment. In addition, according to the embodiment, when the substrate 100 is etched using the nanostructure as a mask, the substrate 100 may correspond to a layer to be etched. The substrate 100 may be selected from a conventional semiconductor substrate such as a silicon substrate, a conductive substrate, or an insulating substrate, depending on the application.

The first and second resist layers 112 and 114 may be made of a thermosetting, thermoplastic, and / or photocurable material, and may be a polymer resin layer. The first and second resist layers 112 and 114 are made of different materials and may be made of a photoresist material such as polymethyl methacrylate (PMMA). The first and second resist layers 112 and 114 may be applied on the substrate 100 by spin coating, screen printing, spraying, or the like.

The first resist layer 112 has a first thickness T1 and the second resist layer 114 has a second thickness T2 and has a ratio of the first thickness T1 to the second thickness T2 The size of the nanostructure can be determined. This will be described in detail below with reference to Figs. 1E and 1F.

Referring to FIG. 1B, a step of preparing a mold 120 having a nano pattern 125 is performed.

The mold 120 is a kind of stamp or template for imprinting and includes a body portion 123 and a nano pattern 125 on the body portion 123. The nano patterns 125 may be plural. The mold 120 may be made of silica, quartz, silicon (Si), silicon carbide (SiC), a metal or a polymeric material and may be made of, for example, polydimethylsiloxane (PDMS), polyurethane acrylate (PUA) (Polytetrafluoroethylene), ETFE (Ethylene Tetrafluoroethylene), or PFA (Perfluoroalkyl acrylate).

The nanopattern 125 may have a three-dimensional shape in which the size and cross-sectional area gradually decrease along the direction extending from the body portion 123, and in particular, the cross-section in the direction perpendicular to the body portion 123 may be triangular . For example, the nanopattern 125 may have a conical shape, a polygonal pyramid, or a triangular prism shape. The shape and arrangement of the nano patterns 125 will be described in detail below with reference to Figs. 4A to 4C.

Referring to FIGS. 1C and 1D, a step of transferring the nano patterns 125 by pressing the mold 120 on the first and second resist layers 112 and 114 is performed.

First, as shown in FIG. 1C, the nanopattern 125 is pressed to penetrate the second resist layer 114 and to be inserted into at least a part of the first resist layer 112. Next, light such as heat and / or UV may be applied to cause the first and second resist layers 112 and 114 to cure. Thus, the shape of the nano patterns 125 can be impressed on the first and second resist layers 112 and 114. When the first and second resist layers 112 and 114 are made of a thermoplastic resin, a process of softening the first and second resist layers 112 and 114 may be additionally performed before the mold 120 is pressed.

The nano pattern 125 may have a first length D1 at the interface between the first resist layer 112 and the second resist layer 114 and the first length D1 may be a nano pattern 125 formed by a subsequent process The size of the structure can be determined.

Next, as shown in Fig. 1D, the mold 120 is removed. A pattern region P in which the nano patterns 125 of the mold 120 are transferred is formed in the first and second resist layers 112 and 114 and the second resist layer 114 in the pattern region P is formed with openings And a portion of the first resist layer 112 is exposed.

Referring to FIG. 1E, a step of selectively etching the first resist layer 112 is performed.

The etch may be performed on the first resist layer 112 exposed in the pattern region P and a dry etch process such as, for example, wet etch or reactive ion etching (RIE) may be used. And anisotropic etching can be performed. Therefore, an opening is also formed in the first resist layer 112, and an undercut U may be formed under the second resist layer 114.

In this step, the etching may be selectively performed only on the first resist layer 112. Therefore, in the case of using, for example, wet etching, an etchant capable of selectively removing only the first resist layer 112 can be used. However, according to the embodiment, the etching may be performed such that the etching rate of the first resist layer 112 is larger than the etching rate of the second resist layer 114.

The opening of the second resist layer 114 at the boundary between the first resist layer 112 and the second resist layer 114 may have a first length D1, And the size of the nano pattern 125 at the boundary between the first resist layer 112 and the second resist layer 114. The first resist layer 112 may have a second length D2 that is greater than the first length D1 at the interface with the second resist layer 114. [ Also, at least a portion of the substrate 100 may be exposed in the pattern region P, and the exposed region may have a third length D3. The third length D3 may be the same as or similar to the first length D1 but may vary depending on the degree of etching of the first resist layer 112 and is not limited to the relative sizes shown in the drawings.

Referring to FIG. 1F, a step of forming the nanostructure 150 on the substrate 100 is performed.

The nanostructure 150 may be formed on the substrate 100 exposed in the pattern region P using the second resist layer 114 as a mask. The nanostructure 150 may be formed by moving the deposition material from the upper side or one side of the substrate 100 to the substrate 100 with the linearity and being deposited. In addition, the deposition material may be deposited by moving at a predetermined angle with respect to the substrate 100, and may be deposited at a vertical or inclined angle. The size D4 of the nanostructure 150 is set such that the first length D1 that is the length of the opening of the second resist layer 114 at the boundary between the first resist layer 112 and the second resist layer 114 ). ≪ / RTI > The size D4 of the nanostructure 150 may be smaller than the first length D1 and the position of the nanostructure 150 may be smaller than the length of the opening of the second resist layer 114 by a predetermined length And may be formed by shifting.

The nanostructure 150 may be formed using physical vapor deposition (PVD) such as sputtering. The nanostructure 150 may be made of, for example, a metal, but various materials may be used depending on the application.

Next, a process of removing the remaining first and second resist layers 112 and 114 may be performed, and only the nanostructures 150 may be arranged on the substrate 100.

According to an embodiment, at least a part of the substrate 100 may be etched using the nanostructure 150 as a mask.

FIGS. 2A to 2C are schematic views showing steps of a method for forming a nanostructure using a nanoimprint according to an embodiment of the present invention.

First, as described above with reference to FIGS. 1A and 1B, a step of sequentially forming first and second resist layers 112 and 114 on a substrate 100 and a step of forming a mold 120 in which a nano pattern 125 is formed, May be performed. In particular, in this embodiment, the thickness of the second resist layer 114 may be relatively large.

2A, the step of pressing the mold 120 on the second resist layer 114 to transfer the nano pattern 125 is performed.

The nano pattern 125 is pressed to be inserted into at least a part of the second resist layer 114. The mold 120 can be inserted into at least a part of the second resist layer 114 without passing through the second resist layer 114 in this embodiment, unlike the embodiment described above with reference to Fig. Next, light such as heat and / or UV may be applied to cause the first and second resist layers 112 and 114 to cure. As a result, the shape of the nano pattern 125 can be impressed on the second resist layer 114.

Referring to FIG. 2B, the mold 120 may be removed. The pattern region P to which the nano pattern 125 of the mold 120 is transferred may be formed on the second resist layer 114. [

Referring to FIG. 2C, a step of etching the second resist layer 114 so that the pattern region P is expanded can be performed.

The etching may be performed by a dry etching process, for example, an oxygen plasma may be used. The first resist layer 112 may be partly etched together with the second resist layer 114.

The pattern region P may be extended by this step so that the pattern region P at the boundary between the first and second resist layers 112 and 114 may have the first length D1 '') Can determine the size of the nanostructure formed by the subsequent process.

Next, as described above with reference to FIGS. 1E and 1F, a step of selectively etching the first resist layer 112 and forming the nanostructures 150 on the substrate 100 are performed, The nanostructure 150 may be formed. According to the present embodiment, unlike the embodiment described above with reference to FIGS. 1A to 1F, when the mold 120 is inserted only into the second resist layer 114 without being inserted into the first resist layer 112 The nanostructure 150 can be formed by etching the second resist layer 114 so that the pattern region P is extended. In this case, the size of the nanostructure 150 can be determined by the size of the removed region of the second resist layer 114 at the interface between the first and second resist layers 112 and 114.

3 is a cross-sectional view illustrating a method of forming a nanostructure using a nanoimprint according to an embodiment of the present invention.

Referring to FIG. 3, a process corresponding to the process of pressing the mold 120 to the first and second resist layers 112 and 114 described above with reference to FIG. 1C is shown for three embodiments, A method of controlling the size of the nanostructure 150 will be described.

The size of the nanostructure 150 may be variously formed from the first diameter to the third diameter (C1, C2, C3) by using the same mold 120 when the nanostructure 150 forms a circular pattern, for example. . The size of the nanostructure 150 can be controlled by selecting the interface levels L1, L2, and L3 of the first and second resist layers 112 and 114. [ As described above, the size of the nanostructure 150 is determined by the size of the opening of the second resist layer 114 formed after the mold 120 is pressed. Therefore, the interface levels L1, L2 and L3 can be changed according to the thickness ratio of the first and second resist layers 112 and 114, whereby the size of the finally formed nanostructure 150 can be controlled have.

For example, when the interface between the first and second resist layers 112 and 114 is located at the first level L1, that is, when the thickness of the first resist layer 112 is relatively thin, The nanostructure 150 having the first diameter C1 can be formed. In addition, when the interface between the first and second resist layers 112 and 114 is located at the third level L3, that is, when the thickness of the first resist layer 112 is relatively thick, The nanostructure 150 having the diameter (C3) can be formed. Here, the case where the nanostructure 150 has a circular shape is described as an example, but the present invention is not limited thereto, and the size control method can be applied to the nanostructure 150 having various shapes. In addition, the interface levels L1, L2 and L3 may be varied in various ways other than the illustrated levels according to the thickness ratio of the first and second resist layers 112 and 114. [

According to the embodiment of the present invention, even when the same mold 120 is used, it is possible to form the nanostructure 150 having different sizes according to the relative thicknesses of the first and second resist layers 112 and 114 do. Therefore, one mold 120 can be utilized for various purposes, and it is possible to prevent the inconvenience of manufacturing a new mold.

4A to 4C are perspective views schematically showing a mold usable in a method of forming a nanostructure using a nanoimprint according to an embodiment of the present invention.

5A to 5C are plan views schematically illustrating nanostructures formed by a method of forming a nanostructure using a nanoimprint according to an embodiment of the present invention.

4A, the mold 120a includes a body portion 123a and a nano pattern 125a on the body portion 123a. A plurality of the nano patterns 125a may be arranged in rows and columns. The nano pattern 125a has a circular cross section on a plane parallel to the body part 123a and a triangular shape on a vertical plane. The nano pattern 125a has a conical shape extending upward from the body part 123a and having a gradually decreasing cross- Lt; / RTI >

When the mold 120a of the present embodiment is used, as shown in Fig. 5A, the formed nanostructure 150a may have a circular pattern.

Referring to FIG. 4B, the mold 120b includes a body portion 123b and a nano pattern 125b on the body portion 123b. A plurality of the nano patterns 125b may be arranged in rows and columns. The nano pattern 125b has a rectangular cross section on a plane parallel to the body section 123b and a triangular cross section on a vertical plane. The cross section of the nano pattern 125b extends upward from the body section 123b, Lt; / RTI > However, the shape of the nanopattern 125b is not limited thereto. The shape of the nanopattern 125b may be used as long as it has a shape that extends upward from the body 123b and has a reduced cross-sectional area.

When the mold 120b of the present embodiment is used, as shown in FIG. 5B, the nanostructure 150b may have a rectangular pattern of the substrate 100. [

Referring to FIG. 4C, the mold 120c includes a body portion 123c and a nano pattern 125c on the body portion 123c, and a plurality of the nano patterns 125c may be arranged in a row. The nano pattern 125c of the present embodiment may have a shape of a triangular column extending in one direction and has a rectangular cross section on a plane parallel to the body portion 123c and a triangular shape on a vertical plane. In addition, it can extend upward from the body portion 123c and its sectional area can be gradually reduced.

When the mold 120c of the present embodiment is used, as shown in Fig. 5C, the nanostructure 150c can form a line pattern.

6 is an electron micrograph of a mold that can be used in a method of forming a nanostructure using a nanoimprint according to an embodiment of the present invention.

Referring to FIG. 6, there is shown a result of analyzing a mold 120 made of Si by scanning electron microscopy (SEM). On the photograph, on the top of the nano pattern 125, a material used as a mold- Was analyzed in the remaining state. The mold 120 may be manufactured by electron-beam lithography using, for example, HSQ (hydrogen silsesquioxane) as a resist, but is not limited thereto.

The mold 120 has a conical shape and is arranged in rows and columns at regular intervals. Specifically, the nano patterns 125 are arranged with a pitch of about 100 nm.

FIGS. 7A to 7C are views schematically showing a method of forming a nanostructure using a nanoimprint according to an embodiment of the present invention.

Referring to FIG. 7A, the substrate 100a includes a base 101 and a usable layer 105, unlike in FIG. 1A. The base 101 may be either a conventional semiconductor substrate such as a silicon substrate, a conductive substrate, or an insulating substrate. The soluble layer 105 may be a polymer layer and may be made of a material that can be dissolved in a predetermined solution in which the base 101 is not dissolved.

The first and second resist layers 112 and 114 may be sequentially stacked on the substrate 100a.

Referring to Fig. 7B, a nanostructure 150 is formed on the substrate 100a by the process described above with reference to Figs. 1B to 1F. In this embodiment, the nanostructure 150 may have, for example, a circular cross section on a plane parallel to the upper surface of the substrate 100a.

Referring to FIG. 7C, a step of melting the soluble layer 105 to collect the nanostructures 105 is performed. The substrate 100a on which the nanostructure 150 is formed is infiltrated into a solution capable of selectively dissolving the soluble layer 105 so that the soluble layer 105 exposed between the nanostructures 150 is separated from the upper surface and the side surface It can be dissolved. As a result, the nanostructures 105, which are nanoparticles, can be collected.

According to the present embodiment, nanostructures 150 such as nanoparticles can be easily manufactured in large quantities.

The present invention is not limited to the above-described embodiment and the accompanying drawings, but is intended to be limited by the appended claims. It will be apparent to those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. something to do.

100: substrate
101: Base
105: available layer
112: first resist layer
114: second resist layer
120: mold
123:
125: nanopattern
150: nanostructures

Claims (13)

Sequentially forming first and second resist layers on a substrate;
Preparing a mold including a body part and a nano pattern extending from the body part and having a size varying in cross section;
Pressing the mold on the second resist layer so that the nano pattern is inserted into the second resist layer to form a pattern region to which the nano pattern is transferred;
Selectively etching the first resist layer to expose the substrate in the pattern area after removing the mold; And
And forming a nanostructure on the substrate using the second resist layer as a mask layer.
The method according to claim 1,
Wherein the mold is inserted into at least a part of the first resist layer through the second resist layer in the step of forming the pattern region.
The method according to claim 1,
In the step of forming the pattern region, the mold is inserted only in the second resist layer,
Further comprising etching the second resist layer to expose the pattern region after removing the mold. ≪ RTI ID = 0.0 > 8. < / RTI >
The method according to claim 1,
Wherein an undercut is formed below the second resist layer in selectively etching the first resist layer. ≪ RTI ID = 0.0 > 8. < / RTI >
The method according to claim 1,
Wherein the size of the nanostructure is determined by the size of the nanopattern at the interface between the first resist layer and the second resist layer in the step of forming the pattern region to which the nanopattern is transferred. A method for forming a nanostructure using the method.
The method according to claim 1,
The size of the nanostructure is determined by the size of the removed region of the second resist layer at the interface between the first resist layer and the second resist layer after selectively etching the first resist layer Wherein the nanostructures are formed by using a nanoimprint.

The method according to claim 1,
Wherein the size of the nanostructure is controlled by the relative thickness of the first and second resist layers.
The method according to claim 1,
Wherein the nanopattern is triangular in cross section in one direction perpendicular to the body. ≪ RTI ID = 0.0 > 8. < / RTI >
The method according to claim 1,
Wherein the step of forming the pattern area to which the nano pattern is transferred comprises curing the first and second resist layers using heat or light.
The method according to claim 1,
Further comprising etching at least a portion of the substrate using the nanostructure. ≪ Desc / Clms Page number 20 >
The method according to claim 1,
Wherein the nanostructure forming material is controlled to be deposited on the substrate at a predetermined angle with respect to the substrate in the step of forming the nanostructure.
The method according to claim 1,
Wherein the substrate comprises a soluble layer formed in an upper region where the first resist layer is formed,
A method of forming a nanostructure using the nanoimprint,
Infiltrating the soluble layer in which the nanostructure is formed into a soluble solution; And
And recovering the nanostructure using the nanoimprint method.
Sequentially forming first and second resist layers on a substrate;
Preparing a mold including a nanopattern having a three-dimensional shape whose cross-sectional area is changed;
Pressing the mold on the second resist layer to transfer the nano pattern;
Selectively etching at least a portion of the exposed first and second resist layers after removing the mold; And
And forming a nanostructure on the substrate using the second resist layer as a mask layer.
KR1020140026932A 2013-07-29 2014-03-07 Method of forming nano structure using nano-imprint KR20150014352A (en)

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KR20130089339 2013-07-29

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