KR20150002345A

KR20150002345A - Band pass filter

Info

Publication number: KR20150002345A
Application number: KR20130076059A
Authority: KR
Inventors: 안유택; 장승구; 류영미
Original assignee: 삼성전기주식회사
Priority date: 2013-06-28
Filing date: 2013-06-28
Publication date: 2015-01-07

Abstract

The present invention relates to a bandpass filter. According to the present invention, there is provided a semiconductor device comprising: a first substrate provided with a plurality of capacitors and a plurality of first conductor patterns; and a second substrate laminated with the first substrate and connected to the plurality of first conductor patterns via a plurality of via- And an attenuation frequency is determined according to the number and shape of the plurality of via holes.

Description

[0001] BAND PASS FILTER [0002]

The present invention relates to a bandpass filter.

A band pass filter (BPF) is a filter that passes only a signal of a specific frequency band and blocks the rest of the signal, and is widely used for selecting a signal of a specific frequency band in a radio signal transceiver. The frequency band that is passed through the bandpass filter and the frequency band that is blocked are divided by the attenuation frequency. The characteristics of the bandpass filter are determined by suppression frequency, insertion loss, bandwidth, and the like.

The bandpass filter is used for attenuation to frequencies other than the used frequency. Although the suppression frequency is intended for all frequency bands other than the used frequency, the closer the suppression frequency band is to the frequency band used, the higher the skirt characteristic . In the band-pass filter, there is a limitation that the insertion loss is deteriorated when the skirt characteristic is increased. To improve this, the physical size must be increased or the process of higher cost should be used.

Reference 1 discloses a band-pass filter incorporating an integrated passive element substrate, which is capable of improving parasitic inductance components in a substrate including a via-hole structure to improve band-stop characteristics in a specific frequency band. Reference 2 discloses a method of manufacturing a multilayer filter, in which a plurality of dielectric sheets are laminated, and inductor electrodes and capacitor electrodes are connected to each other through a via-hole to adjust a pass frequency band and the like. However, cited References 1 and 2 do not disclose contents for improving the skirt characteristic of the conventional band-pass filter.

1. Korean Patent Registration No. KR 10-0969766-0000 2. Korean Patent Registration No. KR 10-0314620-0000

SUMMARY OF THE INVENTION The present invention has been made in order to solve the problems of the prior art described above, and it is an object of the present invention to provide a semiconductor device, a method of manufacturing the same, The present invention provides a bandpass filter having a sharp skirt characteristic and minimizing an insertion loss characteristic by being interconnected with a conductor pattern formed in a peripheral region of at least one capacitor to be disposed.

According to a first technical aspect of the present invention, there is provided a plasma display panel comprising: a first substrate provided with a plurality of capacitors and a plurality of conductor patterns formed in a peripheral region of each of the plurality of capacitors; A second substrate stacked on the first substrate and connected to the plurality of first conductor patterns through a plurality of via holes; Wherein at least one of the plurality of capacitors is arranged in a column different from the plurality of capacitors arranged in a row, and a peripheral region of at least one capacitor arranged in the other column And the conductor pattern formed on the first conductor layer is connected to a conductor pattern formed in a peripheral region of two capacitors disposed at the edges of the plurality of capacitors arranged in a line.

A plurality of conductor patterns formed in a peripheral region of the plurality of capacitors except the two capacitors disposed at the edges among the plurality of capacitors arranged in a line may not be connected to each other.

The attenuation frequency may be determined according to the number and shape of the plurality of via holes.

The plurality of via holes may be formed on the conductive pattern on the first substrate.

The second substrate includes a nonconductive region provided adjacent to a region in contact with the plurality of via holes; . &Lt; / RTI >

As the number of the plurality of via holes increases, the suppression frequency can be determined to be a larger value.

The suppression frequency may be determined to be a smaller value as the extension length of the plurality of via holes is increased by the shape of the plurality of via holes.

The plurality of via holes may have a spiral shape.

The plurality of capacitors may include a multi-layer ceramic capacitor (MLCC), and the first substrate and the second substrate may be a printed circuit board (PCB).

According to the present invention, a conductor pattern formed in a peripheral region of two capacitors arranged at the edges of a plurality of capacitors arranged in a row is divided into a plurality of capacitors arranged in a line and a peripheral region of at least one capacitor arranged in another column And has a sharp skirt characteristic by interconnecting with the formed conductor pattern, thereby minimizing the insertion loss characteristic.

1 is a plan view showing a first substrate side of a band-pass filter according to an embodiment of the present invention,
2 is a plan view showing a second substrate side of a band-pass filter according to an embodiment of the present invention.
3 is an equivalent circuit diagram of a band-pass filter according to an embodiment of the present invention.
4 is a graph illustrating frequency response characteristics of a band pass filter according to an embodiment of the present invention.

The following detailed description of the invention refers to the accompanying drawings, which illustrate, by way of illustration, specific embodiments in which the invention may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention. It should be understood that the various embodiments of the present invention are different, but need not be mutually exclusive. For example, certain features, structures, and characteristics described herein may be implemented in other embodiments without departing from the spirit and scope of the invention in connection with an embodiment. It is also to be understood that the position or arrangement of the individual components within each disclosed embodiment may be varied without departing from the spirit and scope of the invention. The following detailed description is, therefore, not to be taken in a limiting sense, and the scope of the present invention is to be limited only by the appended claims, along with the full scope of equivalents to which such claims are entitled, if properly explained. In the drawings, like reference numerals refer to the same or similar functions throughout the several views.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, so that those skilled in the art can easily carry out the present invention.

FIG. 1 is a plan view showing a first substrate side of a band pass filter according to an embodiment of the present invention, and FIG. 2 is a plan view showing a second substrate side of a band pass filter according to an embodiment of the present invention.

1 and 2, the band-pass filter according to the present embodiment includes a first substrate 100, a plurality of capacitors 200 provided on the first substrate 100, a conductor pattern 300, a plurality of via holes 400, and a second substrate 500, and may further include a non-conductive region 600.

The first substrate 100 and the second substrate 500 included in the band-pass filter 100 may be selected as a printed circuit board (PCB). The band-pass filter may include at least one via hole 140. The via hole 400 may extend through the first substrate 100 and may extend through the second substrate 100, (500). The second substrate may be provided with a conductor pattern (not shown) or a nonconductive region 600 electrically grounded. The conductor pattern 300 forming the inductors L1, L2 and L3 and the second substrate 400 Conductor patterns (not shown) or nonconductive areas 600 and the like can be connected to each other by the via-holes 400.

According to the present embodiment, the suppression frequency band can be adjusted by changing the number and the shape of the via holes 400. For example, since the number of the via-holes 400 is inversely proportional to the inductance of the band-pass filter, the frequency of the band-pass filter can be increased when the number of the via-holes 400 is increased. That is, when the number of via holes formed in the conductor pattern 300 forming the inductor L1 shown in FIG. 1 is changed to two instead of one, the frequency of the suppression band can be increased.

In addition, the via hole 400 may be formed in a spiral shape instead of a simple straight line shape to increase the inductance value and reduce the frequency of the suppression band therefrom.

A non-conductive region may be provided in a peripheral region of the second substrate 500 where the via hole 400 is formed. When the non-conductive region 600 is provided on the second substrate 500, the pass band of the band-pass filter can be adjusted by the non-conductive region 600.

The conductor pattern 300 formed on the first substrate may be used as an inductor, and a part of the conductor pattern 300 is connected to the plurality of capacitors 200, respectively. At this time, at least some of the plurality of capacitors 200 may be a multi-layer ceramic capacitor. By selecting at least one of the plurality of capacitors 200 as a multilayer ceramic capacitor and configuring a band-pass filter using a printed circuit board, the manufacturing yield can be increased and the unit cost can be lowered.

The resonant frequency of the band-pass filter can be determined by the capacitance of the capacitors C1, C3 and the inductance of the inductors L1, L3 formed by the conductor pattern 300. [ At this time, the inductance of the inductors L1 and L3 can be determined by the length or the width of the conductor pattern 300. [

The resonant frequency of the band-pass filter is inversely proportional to the capacitance of the capacitors C1 and C3 and the length h of the conductor pattern forming the inductors L1 and L3, and is in proportion to the width w. Compared with the capacitances of the capacitors C1 and C3, the width and the length of the conductor pattern forming the inductors L1 and L3 can be finely adjusted, thereby making it possible to compensate the limitations of the capacitances of the capacitors C1 and C3 in the resonant frequency design. If the resonance frequency determined by the inductor L1 and the capacitor C1 is f1 and the resonance frequency f2 is determined by the inductor L3 and the capacitor C3, the bandwidth of the band-pass filter is determined as | f1-f2 |. Further, the intermediate frequency of the pass band can be determined as (f1 + f2) / 2.

Capacitor C4 determines the insertion loss of the bandpass filter and the amount of attenuation of the stopband. For example, the insertion loss of the bandpass filter and the attenuation magnitude of the stopband may be inversely proportional to the capacitance of the capacitor C4. At this time, the fine adjustment of the insertion loss and the attenuation magnitude, which can not be controlled by changing the capacitance of the capacitor C4, can be adjusted by determining the coupling component according to the distance of the inductors L1 and L3. The conductor pattern 300 extending from the capacitor C4 to the capacitor C1 and the capacitor C3 forms the inductors L4 and L5.

The inductors L1 and L3 are arranged to face each other with respect to the inductor L2. The inductors L1 and L3 form a mutual inductance so that the resonant frequencies f1 and f2 are coupled to each other. As a result, .

At this time, the capacitor C2 is disposed between the capacitor C1 and the capacitor C3, and the conductor pattern forming the inductor L2 is disposed between the conductor patterns forming the inductor L1 and the inductor L3. Due to the influence of the capacitor C2 and the inductor L2, Skirt characteristics, which are the main performance indicators of the filter, can be improved.

As described above, the band-pass filter is used for attenuation to frequencies other than the used frequency. Although the suppression frequency is intended for all frequency bands other than the used frequency, the suppression frequency band is close to the used frequency band The higher is the required skirt characteristics. There is a limit in that the insertion loss is deteriorated in a general bandpass filter. In the present invention, since the capacitor C2 and the inductor L2 are disposed between the capacitor C1 and the inductor L1, and between the capacitor C3 and the inductor L3, . 1, one capacitor C2 is disposed between the capacitors C1 and C3, and one inductor L2 is disposed between the inductor L1 and the inductor L3. However, the present invention is not limited thereto A plurality of capacitors and inductors may be disposed.

3 is an equivalent circuit diagram of a band-pass filter according to an embodiment of the present invention. At this time, it can be seen that the capacitors C1-C4 and the inductors L1-L5 in FIG. 1 are included in the equivalent circuit. At this time, the capacitors Cc1 and Cc2 and the inductors Lc1 and Lc2 correspond to parasitic components generated in coupling between the capacitors C1-C4 and the inductors L1-L5.

Inductors Lv1, Lv2 and Lv3 connected in series with the capacitors C1, C2 and C3 are formed by a plurality of via-holes, and the inductances of the inductors Lv1, Lv2 and Lv3 are connected to the capacitors C1, Can be determined according to the number and shape of the holes.

4 is a graph illustrating frequency response characteristics of a band pass filter according to an embodiment of the present invention. FIG. 4A is a graph showing a frequency response characteristic when the capacitor C2 and the inductor L2 of the present invention are not present on the first substrate. FIG. 4B is a graph showing the frequency response characteristic when the capacitor C2 and the inductor L2 of the present invention are on the first substrate In a frequency response characteristic graph. 4A and 4B, it can be seen that the frequency response characteristic graph of FIG. 4B has improved skirt characteristics as compared with FIG. 4A like the portion indicated by the dotted line.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, Those skilled in the art will appreciate that various modifications, additions and substitutions are possible, without departing from the scope and spirit of the invention as disclosed in the accompanying claims.

Therefore, the spirit of the present invention should not be construed as being limited to the above-described embodiments, and all of the equivalents or equivalents of the claims, as well as the following claims, I will say.

100: first substrate
200: a plurality of capacitors
300: conductor pattern
400: multiple via holes
500: second substrate
600: Nonconductive area

Claims

A first substrate having a plurality of capacitors and a plurality of conductor patterns formed in a peripheral region of each of the plurality of capacitors; And
A second substrate stacked on the first substrate and connected to the plurality of first conductor patterns through a plurality of via holes; / RTI >
Wherein at least one of the plurality of capacitors is arranged in a column different from that of the plurality of capacitors arranged in a line and a conductor formed in a peripheral region of at least one capacitor disposed in the other column, Wherein the pattern is connected to a conductor pattern formed in a peripheral region of two capacitors arranged at the edges of the plurality of capacitors arranged in a line.

The method according to claim 1,
Wherein a plurality of conductor patterns formed in a peripheral region of a plurality of capacitors except for two capacitors disposed at the edges among the plurality of capacitors arranged in a line are not connected to each other.

The method according to claim 1,
Wherein an attenuation frequency is determined according to the number and shape of the plurality of via holes.

3. The method of claim 2,
Wherein the plurality of via holes are formed on a conductor pattern on the first substrate.

The plasma display panel of claim 1,
A nonconductive region provided adjacent to an area in contact with the plurality of via holes; / RTI >

The method according to claim 1,
Wherein the suppression frequency is determined to be a larger value as the number of the plurality of via holes increases.

The method according to claim 1,
Wherein the suppression frequency is determined to be a smaller value as the extension length of the plurality of via holes is increased by the shape of the plurality of via holes.

8. The method of claim 7,
Wherein the plurality of via holes have a spiral shape.

The method according to claim 1,
The plurality of capacitors include a multi-layer ceramic capacitor (MLCC)
Wherein the first substrate and the second substrate are printed circuit boards (PCBs).