KR20140133263A - Apparatus for manufacturing graphene, the manufacturing method using the same and the graphene manufactured by the same - Google Patents
Apparatus for manufacturing graphene, the manufacturing method using the same and the graphene manufactured by the same Download PDFInfo
- Publication number
- KR20140133263A KR20140133263A KR1020130053200A KR20130053200A KR20140133263A KR 20140133263 A KR20140133263 A KR 20140133263A KR 1020130053200 A KR1020130053200 A KR 1020130053200A KR 20130053200 A KR20130053200 A KR 20130053200A KR 20140133263 A KR20140133263 A KR 20140133263A
- Authority
- KR
- South Korea
- Prior art keywords
- graphene
- thermal expansion
- axial direction
- force
- catalytic metal
- Prior art date
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/24—Stationary reactors without moving elements inside
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/184—Preparation
- C01B32/186—Preparation by chemical vapour deposition [CVD]
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
Description
TECHNICAL FIELD The present invention relates to graphene, and more particularly, to an apparatus, a manufacturing method, and graphene for manufacturing graphene capable of forming high quality graphene.
As materials composed of carbon atoms, fullerene, carbon nanotube, graphene, graphite and the like exist. Among them, graphene is a structure in which carbon atoms are composed of one layer on a two-dimensional plane.
In particular, graphene is not only very stable and excellent in electrical, mechanical and chemical properties, but it is also a good conductive material that can move electrons much faster than silicon and can carry much larger currents than copper, It has been proved through experiments that a method of separation has been discovered.
Such graphene can be formed in a large area and has electrical, mechanical and chemical stability as well as excellent conductivity, and thus is attracting attention as a basic material for electronic circuits.
In addition, since graphenes generally have electrical characteristics that vary depending on the crystal orientation of graphene of a given thickness, the user can express the electrical characteristics in the selected direction and thus design the device easily. Therefore, graphene can be effectively used for carbon-based electric or electromagnetic devices.
Such graphene can be formed on a metal layer that is a catalyst substrate. However, graphene has a negative thermal expansion coefficient, but metal usually has a positive thermal expansion coefficient. Accordingly, wrinkles may occur in the graphene when the graphenes are formed due to the difference in thermal expansion coefficient.
SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and it is an object of the present invention to provide a graphene manufacturing apparatus capable of growing high quality graphene by compensating for a phenomenon that may occur due to a difference in thermal expansion between a catalytic metal and graphene formed on the catalytic metal. , A manufacturing method, and a graphene.
According to a first aspect of the present invention, there is provided an apparatus for producing graphene, comprising: a chamber including a gas inlet and an outlet and to which a catalyst metal is loaded; And a thermal expansion compensation unit positioned at one side of the heating region of the chamber to compensate for a difference in thermal expansion between the graphene and the catalytic metal.
Here, the thermal expansion compensation section may be located in a cooling region located outside the heating region.
The thermal expansion compensation unit may further include: a first portion for applying a force in the first axial direction of the catalytic metal; And a second portion for applying a second axial force perpendicular to the first axial direction of the catalytic metal.
At this time, the first axis direction may be a direction for supplying the catalyst metal into the chamber.
Further, the force applied in the first axial direction or the force applied in the second axial direction may have a range of 0.1 to 5 kg / m.
At this time, the force applied in the first axial direction can be applied by the roller supplying the catalytic metal.
On the other hand, at least one of the force applied in the first axial direction and the force applied in the second axial direction can be applied through the jig.
According to a first aspect of the present invention, there is provided a method of manufacturing graphene, comprising: loading a catalytic metal into a chamber; Feeding a carbon source into the chamber to form graphene on the catalytic metal; Cooling the catalyst metal; And compensating for thermal expansion between the catalyst metal and the graphene.
Here, compensating for the thermal expansion may include applying a force in a first axial direction which is the direction of feeding the catalytic metal into the chamber.
In addition, the step of compensating for the thermal expansion may further comprise the step of applying a force in a second axial direction perpendicular to the first axial direction of the catalytic metal.
At this time, the force applied in the first axial direction can be applied by the roller supplying the catalytic metal.
On the other hand, the force applied in the first axial direction or the force applied in the second axial direction may have a range of 0.1 to 5 kg / m.
Graphene produced by the method described above can be provided.
The present invention has the following effects.
It is possible to prevent the occurrence of wrinkles in the graphene formed on the catalyst metal by applying a force to the catalyst metal in at least one of a first axial direction force and a second axial direction force to compensate for the difference in thermal expansion.
Thus, the quality of graphene can be greatly improved by compensating for the difference in thermal expansion between graphene and the catalyst metal, and in particular, the electrical characteristics of graphene can be greatly improved.
1 is a schematic view showing an example of an apparatus for producing graphene.
2 is a schematic diagram showing the difference in thermal expansion between the catalytic metal and the graphene.
3 is a schematic view showing a thermal expansion compensation section.
Figure 4 is a photograph of a graphene grown without compensation for thermal expansion.
5 is a photograph of graphene grown by compensating for thermal expansion.
6 is a flowchart showing a method for producing graphene.
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
While the invention is susceptible to various modifications and alternative forms, specific embodiments thereof are shown by way of example in the drawings and will herein be described in detail. Rather, the intention is not to limit the invention to the particular forms disclosed, but rather, the invention includes all modifications, equivalents and substitutions that are consistent with the spirit of the invention as defined by the claims.
It will be appreciated that when an element such as a layer, region or substrate is referred to as being present on another element "on," it may be directly on the other element or there may be an intermediate element in between .
Although the terms first, second, etc. may be used to describe various elements, components, regions, layers and / or regions, such elements, components, regions, layers and / And should not be limited by these terms.
1 is a schematic view showing an example of an apparatus for producing graphene.
1, the apparatus for producing graphene includes a
The loading of the
1 shows a roller system including a
And a thermal
Here, the thermal
The
Here, the
As described above, the
Such reaction gas (CxHx) is a compound containing carbon and may be a compound having not more than 6 carbon atoms, a compound having not more than 4 carbon atoms, or a compound having not more than 2 carbon atoms. As an example, a compound of carbon and hydrogen (CxHx) can be used as a reaction gas.
A cooling region in which the temperature of the
The thermal
Here, the first axis direction may be the direction of supplying the
As described above, when the
It is also possible to apply the tension in the first axial direction by using the
A tension adjusting unit (not shown) may be provided to adjust the tension applied to the
At this time, the force applied in the first axis direction or the force applied in the second axis direction may have a range of 0.1 to 5 kg / m.
On the other hand, the force applied in the second axial direction can be applied through the parallel moving device such as the
The
If the
The thermal
Metals such as Ni, Co, Fe, Pt, Au, Al, Cr, Cu, Mg, Mn, Mo, Rh, Si, Ta, Ti, W, U, V and Zr may be used as the
This
On the other hand,
Therefore, when the
At this time, as shown in Fig. 2, the
Therefore, it is possible to compensate for the phenomenon caused by thermal expansion by compensating such shrinkage of the
Fig. 3 is a schematic diagram illustrating the action of the thermal expansion compensating unit. Fig. 3 shows a state in which a force is applied to the
That is, it is possible to apply the force to the
At this time, the first axial direction may be exerted by the
In addition, the second axial direction perpendicular to the first axial direction may be referred to as a transverse direction (TD).
As mentioned above, the force in the first axial direction MD can be exerted by the
When graphenes are formed in such a state that a force is applied to compensate for the difference in thermal expansion, many wrinkles are generated in the graphene, as shown in FIG. This adversely affects the electrical properties of graphene.
Thus, as noted above, thermal expansion compensation may be performed during the formation of graphene, particularly when the
That is, when the difference in thermal expansion is compensated for by applying a force to the
Thus, by compensating for the difference in thermal expansion between the graphene and the
FIG. 6 is a flowchart showing a method of manufacturing graphene using the above-described manufacturing apparatus. Hereinafter, the manufacturing process of graphene will be described with reference to the drawings.
A process of loading the
Thereafter, a carbon source and / or a carrier gas are supplied to the
Next, when all the conditions are stabilized, the
Graphene can be formed on the
Thereafter, the graphene and the
Specifically, the
At this time, as a cooling method in the cooling region, a method of natural cooling or cooling while flowing argon (Ar), nitrogen (N 2 ), or other gas may be used.
When the
That is to say, tension is applied in the feeding direction MD of the
The process of applying the force to the
On the other hand, as mentioned above, the process of applying the force to the
By this process, after the graphene is formed on the
Thereafter, a vacuum pump (not shown) may be operated to remove the residual reaction gas through the
It should be noted that the embodiments of the present invention disclosed in the present specification and drawings are only illustrative of specific examples for the purpose of understanding and are not intended to limit the scope of the present invention. It will be apparent to those skilled in the art that other modifications based on the technical idea of the present invention are possible in addition to the embodiments disclosed herein.
10: chamber 11: heating zone
12: inlet 13: outlet
20: Heating section 31: Feed roll
32: Winding roll 40: Thermal expansion compensation unit
41: first part, conveying
42: second part, jig 50: catalytic metal
60: Grain Fins
Claims (13)
A chamber including a gas inlet and an outlet and into which the catalyst metal is loaded; And
And a thermal expansion compensator positioned at one side of the heating region of the chamber to compensate for a difference in thermal expansion between the graphene and the catalytic metal.
And the heating region is located in a cooling region located outside the heating region.
A first portion for applying a force in a first axial direction of the catalytic metal; And
And a second portion for applying a force in a second axial direction perpendicular to the first axis direction of the catalytic metal.
Feeding a carbon source into the chamber to form graphene on the catalytic metal;
Cooling the catalyst metal; And
And compensating for thermal expansion between the catalyst metal and the graphene.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020130053200A KR20140133263A (en) | 2013-05-10 | 2013-05-10 | Apparatus for manufacturing graphene, the manufacturing method using the same and the graphene manufactured by the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020130053200A KR20140133263A (en) | 2013-05-10 | 2013-05-10 | Apparatus for manufacturing graphene, the manufacturing method using the same and the graphene manufactured by the same |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20140133263A true KR20140133263A (en) | 2014-11-19 |
Family
ID=52453980
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020130053200A KR20140133263A (en) | 2013-05-10 | 2013-05-10 | Apparatus for manufacturing graphene, the manufacturing method using the same and the graphene manufactured by the same |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR20140133263A (en) |
-
2013
- 2013-05-10 KR KR1020130053200A patent/KR20140133263A/en not_active Application Discontinuation
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8142754B2 (en) | Method for synthesis of high quality graphene | |
KR101793683B1 (en) | Method for manufacturing graphene | |
Lavin-Lopez et al. | Synthesis and characterization of graphene: influence of synthesis variables | |
KR101701369B1 (en) | The methods for liquid precursor based synthesis and transfer of high quality graphene based on continuous roll to roll process and the device therefor | |
US20140079623A1 (en) | Method of forming high-quality graphene using continuous heat treatment chemical vapor deposition | |
Fan et al. | Controllable growth of shaped graphene domains by atmospheric pressure chemical vapour deposition | |
Chen et al. | Chemical vapor deposition growth of large single-crystal bernal-stacked bilayer graphene from ethanol | |
KR102018578B1 (en) | Apparatus for growing graphene using Joule heating and Manufacturing method thereof | |
KR102083961B1 (en) | Apparatus for manufacturing graphene, the manufacturing method using the same and the graphene manufactured by the same | |
KR101581362B1 (en) | Apparatus for growing graphene using Joule heating | |
KR101874317B1 (en) | Apparatus and method for manufacturing graphene sheet using roll to roll process | |
US10679850B2 (en) | Manufacturing method for forming a thin film between two terminals | |
KR102083960B1 (en) | Method for manufacturing graphene and the graphene manufactured by the same and the manufacturing apparatus | |
US11545358B2 (en) | Method of forming transition metal dichalcogenide thin film | |
KR20140133263A (en) | Apparatus for manufacturing graphene, the manufacturing method using the same and the graphene manufactured by the same | |
JP2015160241A (en) | Graphene manufacturing rolled copper foil coil, and graphene manufacturing method | |
KR101716785B1 (en) | Apparatus and method of manufacturing graphene | |
KR101154416B1 (en) | Single crystal method | |
KR102173057B1 (en) | Apparatus for growing graphene and method of growing graphene using thereof | |
KR101542412B1 (en) | Method for manufacturing graphene thermal diffusion sheet | |
KR101706957B1 (en) | Apparatus for growing graphene using induction heating | |
Wu et al. | Three step fabrication of graphene at low temperature by remote plasma enhanced chemical vapor deposition | |
KR20160016403A (en) | Method for manufacturing graphene sheet and the graphene sheet manufactured by the same | |
KR102018576B1 (en) | Apparatus for growing graphene using Joule heating | |
Feng et al. | Safe growth of graphene from non-flammable gas mixtures via chemical vapor deposition |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E601 | Decision to refuse application |