KR20140090720A - Method and apparatus of cleaning a photo mask - Google Patents

Method and apparatus of cleaning a photo mask Download PDF

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Publication number
KR20140090720A
KR20140090720A KR1020120151668A KR20120151668A KR20140090720A KR 20140090720 A KR20140090720 A KR 20140090720A KR 1020120151668 A KR1020120151668 A KR 1020120151668A KR 20120151668 A KR20120151668 A KR 20120151668A KR 20140090720 A KR20140090720 A KR 20140090720A
Authority
KR
South Korea
Prior art keywords
photomask
cleaning liquid
fluid layer
cleaning
deionized water
Prior art date
Application number
KR1020120151668A
Other languages
Korean (ko)
Inventor
신현덕
Original Assignee
에스케이하이닉스 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에스케이하이닉스 주식회사 filed Critical 에스케이하이닉스 주식회사
Priority to KR1020120151668A priority Critical patent/KR20140090720A/en
Publication of KR20140090720A publication Critical patent/KR20140090720A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning By Liquid Or Steam (AREA)

Abstract

The photomask cleaning method of the present invention includes the steps of forming a fluid layer on the surface of a photomask, supplying a cleaning liquid to the photomask on which the fluid layer is formed, and allowing the cleaning liquid to diffuse in the fluid layer.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a photomask cleaning method,

BACKGROUND OF THE INVENTION 1. Field of the Invention [0002] The present invention relates to a photomask used in semiconductor device fabrication, and more particularly, to a photomask cleaning method and a cleaning apparatus.

Generally, semiconductor devices are made of fine circuit patterns, which are formed through a photolithography process using a photomask. According to the photolithographic process, a photoresist film is coated on a material film on which a pattern is to be formed, and light is irradiated onto a part of the photoresist film using a photomask having a predetermined light blocking pattern. Then, a photoresist film pattern in which a part of the photoresist film is removed by development using a developing solution is formed. Then, the exposed portion of the material film is removed by an etching process using the photoresist film pattern as an etching mask, so that a material film pattern corresponding to the light blocking pattern of the photomask is formed.

However, in performing such a photolithography process, when foreign materials are present in the photomask, the foreign matter is transferred to the photoresist film so that a photoresist film pattern of a desired profile can not be formed. As a result, an undesired pattern is formed in the material film . Therefore, a cleaning process should be performed on the photomask to remove foreign substances from the photomask. Conventionally, a cleaning process for a photomask is performed such that the cleaning liquid is sprayed on the surface of the photomask while rotating the photomask, and the foreign substance is removed while the cleaning liquid diffuses over the entire surface of the photomask.

However, the time for the cleaning liquid to stay from the center of the photomask to the edge is shortened, so that the time for the cleaning liquid to react with the foreign material is long at the center of the photomask, while the time for the cleaning liquid to react with the foreign material becomes shorter . As the cleaning time increases due to the time deviation, there is a problem that the uniformity of CD (Critical Dimension) at the center portion and the edge of the photomask is lowered.

A problem to be solved by the present invention is to provide a method of cleaning a photomask that suppresses the lowering of the seeding uniformity at the central portion and the edge of the photomask.

A photomask cleaning method according to an exemplary embodiment of the present invention includes the steps of forming a fluid layer on a surface of a photomask, supplying a cleaning liquid to the photomask on which the fluid layer is formed, and allowing the cleaning liquid to diffuse in the fluid layer .

In one example, the fluid layer may be formed using deionized water.

In one example, the cleaning liquid may comprise an SC-1 cleaning liquid.

In one example, the cleaning liquid may be supplied to the edges of the photomask on which the fluid layer is formed by spraying.

In one example, the step of causing the cleaning liquid to diffuse in the fluid layer may be performed by rotating the photomask.

A cleaning apparatus for a photomask according to an exemplary embodiment of the present invention includes a rotatable photomask support table, a first nozzle for supplying a fluid for forming a fluid layer to a surface of the photomask on the support table, And a second nozzle.

In one example, the first nozzle can supply deionized water to the photomask surface.

According to the present invention, uniform cleaning liquid is supplied over the entire surface of the photomask, thereby providing an advantage that the CD variation amount of the photomask pattern by the cleaning liquid can be made uniform.

1 is a flow chart showing a cleaning method of a photomask according to an example of the present invention.
FIGS. 2 to 6 are views illustrating the steps of FIG. 1 in detail.

1 is a flow chart showing a cleaning method of a photomask according to an example of the present invention. 1, the method of cleaning a photomask according to this embodiment includes the steps of forming a fluid layer of deionized water (DIW) on the surface of a photomask (step 110), supplying a cleaning liquid (Step 120), and rotating the photomask to cause the cleaning liquid to diffuse (step 130). This results in a uniform CD (CD) change over the photomask as the cleaning liquid diffuses due to the concentration difference in the fluid layer.

Hereinafter, the present invention will be described in more detail with reference to FIG. 2 to FIG.

FIGS. 2 and 3 are diagrams for explaining the step of forming a deionized water (DIW) fluid layer on the photomask surface, and FIG. 3 is a cross-sectional view taken along the line I-II in FIG. 2 and 3, deionized water (DIW) is applied onto the surface of the photomask 200 through the first nozzle 300 disposed on the surface of the photomask 200, as indicated by the arrow 310 in the drawing. . The DIW supplied through the first nozzle 300 forms a deionized water fluid layer 400 on the surface of the photomask 200. After the deionized water (DIW) is supplied or the deionized water (DIW) is supplied, the photomask 200, as shown by the arrow 210 and the dotted line in FIG. 2, It may be rotated in a predetermined direction, for example, a clockwise direction. To this end, although not shown in the drawing, the photomask 200 is supported by a rotatable support (not shown).

Figs. 4 and 5 are diagrams for explaining the step of supplying the cleaning liquid onto the deionized water (DIW) fluid layer 400, and Fig. 5 is a cross-sectional view taken along the line I-II in Fig. 4 and 5, through a second nozzle 500 disposed over the surface of the photomask 200, a deionized water (DIW) fluid layer 400, as indicated by arrow 510 in the figure, The cleaning liquid is supplied onto the surface of the formed photomask 200. The cleaning liquid may include SC-1 (Standard Cleaning-1) cleaning liquid. Depending on the object to be cleaned, SPM (sulfuric acid and hydrogen peroxide mixture) composed of various cleaning liquids such as H2SO4: H2O2: H2O, DIO3 And the like. The supply of the cleaning liquid through the second nozzle 500 is made at the edge of the photomask 200 (the portion indicated by "A" in the figure). Next, the cleaning liquid is diffused on the surface of the photomask 200. To this end, the photomask 200 may be rotated in a predetermined direction, for example, a clockwise direction, as indicated by the arrow 210 and the dotted line in FIG. 4, while supplying the cleaning liquid or supplying the cleaning liquid.

When the photomask 200 is rotated while supplying or supplying the cleaning liquid to the edge A of the photomask 200 in which the deionized water (DIW) fluid layer 400 is formed as described above, the supplied cleaning liquid is deionized water (DIW ) Due to the difference in the concentration in the liquid layer 400, and is uniformly distributed over the entire surface of the photomask 200 after a lapse of a predetermined time.

6 is a graph showing the diffusion state of the cleaning liquid with time. Referring to FIG. 6, as indicated by reference numeral 610, most of the cleaning liquid is distributed in the vicinity of the edge A of the photomask after 0.01 seconds from the supply of the cleaning liquid. However, as indicated by reference numeral 620, after about 0.02 seconds, it is gradually diffused to the periphery, and as shown by reference numeral 630, the diffusion range becomes wider after 0.03 seconds. Also, as indicated by reference numeral "640 ", it can be seen that after 0.04 seconds diffusion is uniformly spread over almost all surfaces.

200 ... photomask 300 ... first nozzle
400 ... fluid layer 500 ... second nozzle

Claims (7)

Forming a fluid layer on the photomask surface;
Supplying a cleaning liquid to the photomask on which the fluid layer is formed; And
And allowing the cleaning liquid to diffuse in the fluid layer. The method according to claim 1,
Wherein the fluid layer is formed using deionized water. The method according to claim 1,
Wherein the cleaning liquid comprises an SC-1 cleaning liquid. The method according to claim 1,
Wherein the cleaning liquid is sprayed onto the edge of the photomask on which the fluid layer is formed and supplied. The method according to claim 1,
Wherein the step of causing the cleaning liquid to diffuse in the fluid layer is performed by rotating the photomask. A rotatable photomask support;
A first nozzle for supplying a fluid for forming a fluid layer to a surface of the photomask on the support; And
And a second nozzle for supplying a cleaning liquid to the photomask. The method according to claim 6,
Wherein the first nozzle supplies deionized water to the surface of the photomask.
KR1020120151668A 2012-12-24 2012-12-24 Method and apparatus of cleaning a photo mask KR20140090720A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020120151668A KR20140090720A (en) 2012-12-24 2012-12-24 Method and apparatus of cleaning a photo mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020120151668A KR20140090720A (en) 2012-12-24 2012-12-24 Method and apparatus of cleaning a photo mask

Publications (1)

Publication Number Publication Date
KR20140090720A true KR20140090720A (en) 2014-07-18

Family

ID=51738178

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020120151668A KR20140090720A (en) 2012-12-24 2012-12-24 Method and apparatus of cleaning a photo mask

Country Status (1)

Country Link
KR (1) KR20140090720A (en)

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