KR20140089854A - Semiconductor device manufacturing apparatus and method of manufacturing semiconductor device using the same - Google Patents

Abstract

The semiconductor device manufacturing apparatus includes a support portion having a support surface for supporting a substrate, an electric field applying portion for applying an electric field perpendicularly to the substrate, and a heat exchanging portion for dispersing heat of the substrate. In the method of manufacturing a semiconductor device, a part of the photoresist film formed on the substrate is exposed to a predetermined depth from the top surface of the photoresist film to generate an acid. An electric field is applied perpendicularly to the substrate to diffuse the acid in the photoresist film. The photoresist film is developed to form a photoresist pattern.

Description

TECHNICAL FIELD [0001] The present invention relates to a semiconductor device manufacturing apparatus and a semiconductor device manufacturing method using the same.

TECHNICAL FIELD The present invention relates to a semiconductor device manufacturing apparatus and a semiconductor device manufacturing method using the semiconductor device, and more particularly, to a semiconductor device manufacturing apparatus and a method of manufacturing a semiconductor device using the same, which are required to perform a photolithography process.

It is urgent to develop a technique for manufacturing a nanoscale semiconductor device according to the high integration of semiconductor devices. For example, as a design rule of a dynamic random access memory (DRAM) device becomes smaller, a photolithography process for forming a plurality of contact holes arranged at a high density with a fine pitch is performed, critical dimension There is a problem that scattering is deteriorated. Particularly, in a photolithography process using an extreme ultraviolet (EUV) light source with a wavelength of about 13 nm, which is highly likely to be applied to the mass production process of nano-scale semiconductor devices of 65 nm or less, the CD uniformity of a plurality of contact holes having a small size A technology that can simplify the process and improve the productivity is needed.

It is an object of the present invention to provide a semiconductor device manufacturing apparatus capable of easily controlling CD of a fine pattern to be formed in a process of manufacturing a highly integrated semiconductor device and simplifying a semiconductor device manufacturing process, .

Another technical problem to be solved by the technical idea of the present invention is to obtain a photoresist pattern having a uniform CD (critical dimension) scattering while improving a resist resolution while ensuring a high productivity by using a low dose in a photolithography process And a method for manufacturing the semiconductor device.

According to an aspect of the present invention, there is provided an apparatus for manufacturing a semiconductor device, comprising: a support having a support surface for supporting a substrate; an electric field applying unit for applying an electric field perpendicular to a direction in which the substrate extends; And a heat exchanger provided on the support to disperse the heat.

In some embodiments, the electric field applying unit may include an upper electrode, a lower electrode, and a power source connected to the upper electrode and the lower electrode to apply an electric field between the upper electrode and the lower electrode .

The heat exchanger may have a configuration in which a cavity is disposed in the support and provides a path through which fluid can flow below the support surface.

In some other embodiments, the electric field applying unit includes a waveguide coupled to the microwave generator and guiding a microwave generated by the microwave generator, and a waveguide connected to the waveguide, And a microwave emitting member having a plurality of slots formed therein for radiating the microwave toward the support portion.

The electric field applying unit may include an electrode facing the supporting surface with an electric field applied space therebetween. In addition, an electromagnetic wave supply unit may be disposed at a position facing the support surface with the electrode interposed therebetween. At this time, the electrode may have a net shape. Alternatively, the electrode may be a transparent substrate.

The electrode may include a transparent substrate and a transparent electrode formed on the first surface of the transparent substrate. A reversible thermochromic film formed on a second surface opposite to the first surface of the transparent substrate to control the opening and closing of a path through which the electromagnetic wave supplied from the electromagnetic wave supply unit is transmitted to the support surface, As shown in FIG.

In some embodiments, the apparatus may further include an electromagnetic wave supply unit disposed between the electrode and the support unit at a position spaced apart from the support surface. The electromagnetic wave supply part may be disposed in the electric field application space between the electrode and the support part. Alternatively, the electromagnetic wave supply unit may be disposed at a position deviated from the electric field application space at a higher level than the support surface, in order to provide an electromagnetic wave incident on the substrate through the electric field application space. The electromagnetic wave supply unit may include an infrared lamp, a solid-state laser, a Ni-Cr heater, a ceramic heater, or a quartz heater.

The electrode may be arranged to face the support surface to apply an electric field perpendicular to the extending direction of the support surface. And an insulating layer disposed between the electrode and the supporting surface so as to cover one surface of the electrode.

In the method of manufacturing a semiconductor device according to an embodiment of the present invention, a photoresist film is formed on a substrate. A part of the photoresist film is exposed to a predetermined depth from the top surface of the photoresist film to generate an acid. An electric field is applied to the substrate perpendicularly to the main surface extending direction of the substrate to diffuse the acid in the photoresist film. The photoresist film is developed to form a photoresist pattern.

In some embodiments, the step of diffusing the acid may include applying heat to the photoresist film using electromagnetic waves incident from the top surface of the photoresist film.

In some other embodiments, the step of diffusing the acid comprises the steps of applying heat to the photoresist film using heat transferred from the top surface of the photoresist film, and applying heat to the bottom surface of the substrate And discharging heat from the substrate to the outside.

In some further embodiments, the step of diffusing the acid may include the step of applying heat to the photoresist film using electromagnetic waves incident on the top surface of the photoresist film in a direction different from the direction in which the electric field is applied have.

The semiconductor device manufacturing apparatus according to the technical idea of the present invention can simplify the manufacturing process of the highly integrated semiconductor device and improve the productivity. According to the method of manufacturing a semiconductor device according to the technical idea of the present invention, after the acid is generated in the photoresist film by exposure, the diffusion distance in the horizontal direction of the acid is reduced using an electric field in the post- The CD uniformity and the line width roughness (LWR) of the pattern to be formed can be improved. Further, since the time required for the diffusion of the acid can be shortened, the movement of the acid in the horizontal direction can be further reduced. Even when a small amount of acid is generated due to the relatively low dose in the exposure step, So that the deprotection reaction is sufficiently caused to reach the bottom surface of the photoresist pattern in the exposed region, whereby a resist pattern of a desired shape can be formed. Therefore, the productivity of the photolithography process can be improved, and the resolving power can be increased, which can be advantageously used in the next generation of highly integrated semiconductor devices.

1 is a schematic view illustrating the configuration of a semiconductor device manufacturing apparatus according to the technical idea of the present invention.
2 is a cross-sectional view schematically showing a main configuration of a semiconductor device manufacturing apparatus according to some embodiments of the technical idea of the present invention.
3 is a cross-sectional view schematically showing a main configuration of a semiconductor device manufacturing apparatus according to some embodiments of the technical idea of the present invention.
FIG. 4A is a cross-sectional view showing a part of a heat exchanging part of a semiconductor device manufacturing apparatus according to some embodiments of the technical idea of the present invention, and FIG. 4B is a sectional view taken along line 4B-4B 'of FIG.
5 is a cross-sectional view schematically showing a main configuration of a semiconductor device manufacturing apparatus according to some embodiments of the technical idea of the present invention.
6 is a cross-sectional view schematically showing a main configuration of a semiconductor device manufacturing apparatus according to some embodiments of the technical idea of the present invention.
FIG. 7 is a cross-sectional view schematically showing a main configuration of a semiconductor device manufacturing apparatus according to some embodiments of the technical idea of the present invention.
8A is a plan view of an exemplary electrode that can be employed as an upper electrode in a semiconductor device manufacturing apparatus according to some embodiments of the technical concept of the present invention. 8B is a sectional view taken along line 8B-8B 'in FIG. 8A. 8C is a sectional view taken along the line 8C - 8C 'in FIG. 8A.
9A is a plan view of an exemplary electrode that can be employed as an upper electrode in a semiconductor device manufacturing apparatus according to some embodiments of the technical concept of the present invention. 9B is a sectional view taken along line 9B-9B 'in FIG. 9A. 9C is a sectional view taken along line 9C-9C 'in Fig. 9A.
FIG. 10 is a graph showing the relationship between the cooling process by the heat exchanger, the electric field applying process by the electric field applying unit, and the on / off timing of the electromagnetic wave supplying process by the electromagnetic wave supplying unit in the semiconductor device manufacturing apparatus according to some embodiments of the technical idea of the present invention FIG.
11 is a cross-sectional view schematically showing a main configuration of a semiconductor device manufacturing apparatus according to some embodiments of the technical idea of the present invention.
12 is a graph for explaining hysteresis characteristics in a color density-temperature curve of a reversible thermochromic film.
13A and 13B are views for explaining the function of the reversible thermochromic film which opens or blocks the path through which the electromagnetic wave supplied from the electromagnetic wave supply unit is transmitted to the support unit side.
14 is a cross-sectional view schematically showing a main configuration of a semiconductor device manufacturing apparatus according to some embodiments of the technical idea of the present invention.
FIG. 15 is a cross-sectional view schematically showing a main configuration of a semiconductor device manufacturing apparatus according to some embodiments of the technical idea of the present invention. FIG.
16 is a cross-sectional view schematically showing a main configuration of a semiconductor device manufacturing apparatus according to some embodiments of the technical idea of the present invention.
17 is a cross-sectional view schematically showing a main configuration of a semiconductor device manufacturing apparatus according to some embodiments of the technical idea of the present invention.
18 is a cross-sectional view schematically showing a main configuration of a semiconductor device manufacturing apparatus according to some embodiments of the technical idea of the present invention.
19 is a flowchart illustrating a method of manufacturing a semiconductor device according to embodiments of the present invention.
20A to 20D are cross-sectional views sequentially illustrating a process of manufacturing a semiconductor device according to a process sequence in accordance with the method illustrated in FIG.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The same reference numerals are used for the same constituent elements in the drawings, and a duplicate description thereof will be omitted.

Embodiments of the present invention will now be described more fully hereinafter with reference to the accompanying drawings, in which exemplary embodiments of the invention are shown. These embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. The present invention is not limited to the following embodiments. Rather, these embodiments are provided so that this disclosure will be more thorough and complete, and will fully convey the concept of the invention to those skilled in the art.

Although the terms first, second, etc. are used herein to describe various elements, regions, layers, regions and / or elements, these elements, components, regions, layers, regions and / It should not be limited by. These terms do not imply any particular order, top, bottom, or top row, and are used only to distinguish one member, region, region, or element from another member, region, region, or element. Thus, a first member, region, region, or element described below may refer to a second member, region, region, or element without departing from the teachings of the present invention. For example, without departing from the scope of the present invention, the first component may be referred to as a second component, and similarly, the second component may also be referred to as a first component.

Unless otherwise defined, all terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the inventive concept belongs, including technical terms and scientific terms. In addition, commonly used, predefined terms are to be interpreted as having a meaning consistent with what they mean in the context of the relevant art, and unless otherwise expressly defined, have an overly formal meaning It will be understood that it will not be interpreted.

If certain embodiments are otherwise feasible, the particular process sequence may be performed differently from the sequence described. For example, two processes that are described in succession may be performed substantially concurrently, or may be performed in the reverse order to that described.

In the accompanying drawings, for example, variations in the shape shown may be expected, depending on manufacturing techniques and / or tolerances. Accordingly, embodiments of the present invention should not be construed as limited to any particular shape of the regions shown herein, but should include variations in shape resulting from, for example, manufacturing processes.

1 is a schematic view illustrating a configuration of a semiconductor device manufacturing apparatus 10 according to the technical idea of the present invention. The semiconductor device manufacturing apparatus 10 illustrated in Fig. 1 can be used in a photolithography process for manufacturing semiconductor devices.

1, a semiconductor device manufacturing apparatus 10 includes a stage unit 20 having a plurality of stages, a coating unit 30, a pre-exposure processing unit 40, a cooling unit 50, an exposure unit 60 A post-exposure treatment unit 70, a developing unit 80, and an interface 90 for moving the substrate to be processed between each of them.

The substrate that can be processed in the semiconductor device manufacturing apparatus 10 may be a semiconductor substrate, for example, a wafer, but is not limited thereto.

The stage portion 20 may be provided with a plurality of loading portions on which the cassettes accommodating substrates are placed. In the coating unit 30, a process of forming a photoresist film by coating a photoresist composition on a substrate can be performed. As the photoresist composition, a chemically amplified resist composition can be used. The coating unit 30 may include a coating unit (not shown) for coating a photoresist composition on a substrate, and a heat treatment unit (not shown) for performing a heat treatment on the coated photoresist composition.

A soft bake process may be performed in the pre-exposure processing unit 40. [ The photoresist film formed in the coating unit 30 may be heated at a predetermined temperature, for example, about 50 to 200 ° C for a predetermined time, for example, about 50 to 150 seconds to remove the solvent in the photoresist film. Thereafter, the soft-baked photoresist film can be cooled in the cooling unit 50.

In the exposure unit 60, electron beam exposure, EUV (extreme ultra violet) exposure,

(KrF) excimer laser (wavelength: 248 nm), ArF (Argon Fluoride) excimer laser (wavelength: 193 nm) and i-line (365 nm) exposure can be performed. However, It is not.

The post-exposure post-processing unit 70 includes an exposure post-processing device 72 installed in the chamber. In the post-exposure apparatus 72, an acid generated by exposure in the photoresist film may be diffused to induce a deprotection reaction of the resist resin constituting the photoresist film. The details of the post-exposure apparatus 72 will be described later with reference to FIGS. 2 to 18. FIG.

In the developing unit 80, the developing process can be performed on the substrate that has undergone the predetermined post-exposure process in the post-exposure post-processing unit 70. The developing unit 80 may include a developing unit (not shown) for supplying a developer to the exposed substrate to perform a developing process, and a heat treatment unit (not shown) for performing heat treatment after the developing process.

Next, semiconductor device manufacturing apparatuses according to some embodiments of the technical idea of the present invention will be described. The semiconductor device manufacturing apparatuses described below can be used as the post-exposure processing apparatus 72 of Fig.

2 is a cross-sectional view schematically showing a main configuration of a semiconductor device manufacturing apparatus 100 according to some embodiments of the technical idea of the present invention.

The semiconductor device manufacturing apparatus 100 includes a supporting portion 110 having a supporting surface 112 for supporting a substrate W and a supporting portion 110 for supporting the substrate W in a direction perpendicular to the main surface extending direction 2 to y direction), that is, an electric field applying unit 140 for applying an electric field EF in the thickness direction of the substrate W.

The electric field applying unit 140 is connected to the upper electrode 142, the lower electrode 144, the upper electrode 142 and the lower electrode 144 to form the upper electrode 142 and the lower electrode 144, And a power source 146 for applying an electric field EF between the electrodes. In FIG. 2, the waveform of the output voltage from the power source 146 is illustrated as a rectangular wave having a peak voltage V / -V. However, the technical idea of the present invention is not limited thereto. For example, a DC voltage may be applied from the power source 146. In some embodiments, an electric field (EF) of about 1 Hz to 10 KHz may be applied between the upper electrode 142 and the lower electrode 144 through the power source 146. In some embodiments, the peak-to-peak voltage in the waveform of the output voltage from the power supply 146 may be about 5 to 50. [

The upper electrode 142 is provided on the supporting surface 112 so that the electric field SP can be ensured between the substrate W and the upper electrode 142 in a state where the substrate W is placed on the supporting surface 112. [ Is disposed at a position sufficiently spaced apart from the support surface 112 of the base 110. In some embodiments, a distance of several to several tens of millimeters may be maintained between the upper electrode 142 and the support surface 112.

The lower electrode 144 may be included as a part of the support 110. In some embodiments, the lower electrode 144 may be in direct contact with the bottom surface of the substrate W. In some other embodiments, a metal or an insulating film may be interposed between the lower electrode 144 and the substrate W. [

The upper electrode 142 and the lower electrode 144 may be formed of a metal electrode or a metal-based transparent electrode, respectively. The constituent material of the upper electrode 142 and the constituent material of the lower electrode 144 may be the same or different from each other. In some embodiments, the upper electrode 142 and the lower electrode 144 may each comprise a metal electrode. The metal electrode may be made of Al, Cr, Cu, Ni, Mo, or a combination thereof. For example, the upper electrode 142 and the lower electrode 144 may be made of aluminum (Al), respectively. In some other embodiments, the upper electrode 142 may be a transparent electrode, and the lower electrode 144 may be a metal electrode. The transparent electrode may be formed of indium tin oxide (ITO). In some other embodiments, the upper electrode 142 and the lower electrode 144 may each be a transparent electrode.

The substrate W may have a structure in which a photoresist film exposed through an exposure process is exposed on the upper surface. The photoresist film may contain the acid generated during the exposure process. An electric field EF is applied between the upper electrode 142 and the lower electrode 144 when the post-exposure process is performed using the semiconductor device manufacturing apparatus 100 for the photoresist film subjected to the exposure process The electric field EF is applied in the thickness direction perpendicular to the direction in which the main surface of the substrate W extends. As the electric field EF is applied to the substrate W in the thickness direction in this way, the acid in the photoresist film is moved not only by diffusion but also by a drift movement due to an electric field, . In other words, the electric field EF applied between the upper electrode 142 and the lower electrode 144 causes a change in the diffusion direction in which the acid moves toward the bottom surface of the photoresist film, Diffusion is suppressed, and the diffusion distance in the vertical direction is increased. Therefore, in order to improve the productivity in the exposure process, even when a relatively small amount of acid is generated due to a relatively small dose at the time of exposure, in the exposed region of the photoresist film, The diffusion can be smoothly performed, and the deprotection reaction of the resist resin can be smoothly performed over the entire thickness of the photoresist film. As a result, after the subsequent development step, a photoresist pattern having a good sidewall profile can be obtained.

In some embodiments, a high frequency electric field of about 300 MHz or higher can be applied between the upper electrode 142 and the lower electrode 144. In this case, due to the activation energy supplied to the photoresist film by the high-frequency electric field even if no additional heat is applied to the substrate W for accelerating the acid diffusion and the deprotection reaction of the resist resin, And the deprotection reaction of the resist resin can be promoted. Therefore, by using a method of applying a high frequency electric field between the upper electrode 142 and the lower electrode 144 without using a separate heating means for supplying heat to the substrate W, A post-exposure post-treatment process can be performed.

3 is a cross-sectional view schematically showing a main configuration of a semiconductor device manufacturing apparatus 200 according to some embodiments of the technical idea of the present invention. In FIG. 3, the same reference numerals as in FIG. 2 denote the same members, and a detailed description thereof will be omitted for the sake of simplicity.

Referring to FIG. 3, the semiconductor device manufacturing apparatus 200 includes a heat exchange unit 120 installed in the support 110 to disperse heat of the substrate W. As shown in FIG. The heat exchanging unit 120 may be positioned between the substrate W and the lower electrode 144.

A temperature deviation of the substrate W may occur during the post-exposure post-treatment process for the substrate W. For example, a temperature deviation may occur depending on the position of the substrate W on one substrate W. Alternatively, inter-substrate temperature bumps can be generated between the substrate W to be pre-processed and the substrate W to be processed subsequently. As a result, a CD (critical dimension) deviation may occur depending on the position of the substrate W, and a CD deviation may occur between the substrate to be processed before and the substrate to be processed next. Particularly, it is possible to remove the substrate W from the upper electrode 142 or the lower electrode 144 while applying a vertical electric field to the substrate W during the post-exposure processing for the substrate W, or from another heat source (not shown) Heat may be transferred to the wafer W. After the post-exposure process for the substrate W is terminated, the power source 146 is turned off, and the radiant heat from the upper electrode 142 or the lower electrode 144 causes the photoresist film It is possible to affect CD uniformity of the pattern to be formed on the substrate W because the mountains in the substrate W are diffused without having a certain directionality and adversely affect the substrate W. [

In the semiconductor device manufacturing apparatus 200, after the electric field is applied to the substrate W, and if necessary, the post-exposure process for the substrate W is completed, the power source 146 is turned off, The heat of the substrate W can be dispersed from the bottom surface of the substrate W by using the heat exchanging unit 120 to cool the substrate W. [ By doing so, it is possible to suppress the diffusion of undesired acid or the deprotection reaction of the polymer after the post-exposure treatment process for the substrate W is completed, and it is possible to suppress the temperature difference depending on the position on the substrate W, It is possible to reduce the CD deviation caused by the error.

4A and 4B are views for explaining the heat exchanging part 120 of FIG. 3 in more detail, FIG. 4A is a sectional view showing a part of the heat exchanging part 120, FIG. 4B is a sectional view taken along the line 4B- to be.

3, 4A and 4B, the heat exchanging unit 120 includes an outer wall 122 for providing a path for fluid, and an outer wall 122 for guiding a fluid flow path in a space defined by the outer wall 122. [ And guide barrier ribs 124. At least one cavity 126 is defined by the outer wall 122 and the guide barrier 124. The cavity 126 provides a path through which the cooling fluid can flow. In this example, two cavities 126 having a concentric circular shape are formed. However, according to the technical idea of the present invention, various shapes and various numbers of cavities can be formed.

The outer wall 122 and the guide barrier 124 may be made of a material having excellent thermal conductivity. For example, the outer wall 122 and the guide barrier 124 may be made of Al, respectively.

The fluid introduced into the heat exchange unit 120 through the fluid inlet 128A may be discharged to the fluid outlet 128B again through the inside of the cavity 126 along the flow path as indicated by the arrow F. [ Heat from the substrate W can be transferred to the fluid while the fluid passes through the interior of the cavity 126. The fluid may be comprised of liquid, such as water, N ₂ gas, or air.

In some embodiments, the temperature difference due to the position of the substrate W is canceled by the fluid flowing in the heat exchanging part 120, so that the temperature of the substrate W can be made uniform according to the position. Further, when the temperature of the substrate W is excessively increased while the electric field is applied to the substrate W, the temperature of the substrate W can be lowered by using the heat exchanging unit 120. Accordingly, it is possible to solve the problems caused by the heat remaining on the substrate W after completion of the post-exposure processing, and it is possible to reduce the temperature deviation according to the position on the substrate W or the CD deviation due to the temperature difference between the substrates.

5 is a cross-sectional view schematically showing a main configuration of a semiconductor device manufacturing apparatus 300 according to some embodiments of the technical concept of the present invention.

5, the semiconductor device manufacturing apparatus 300 includes a support 210 having a support surface 212 for supporting a substrate W, a support 210 for supporting the substrate W, And an electric field applying section 240.

The electric field applying unit 240 includes a microwave generator 242, a waveguide 244 coupled to the microwave generator 242, and a waveguide 244 connected to the waveguide 244, And a microwave emitting member 246 that emits a microwave toward the support portion 210 at a position facing the support portion 210.

The waveguide 244 guides the microwave generated by the microwave generator 242. The microwave radiating member 246 includes an antenna member 248 having a plurality of slots S formed therein to radiate microwaves from the waveguide 244 toward the support 210 do.

In some embodiments, the microwave radiating member 246 may further include a wave retardation plate (not shown) that compresses the wavelength of the microwave and directs it to the antenna member 248. The microwave radiating member 246 may emit a microwave in a direction perpendicular to the substrate W toward the substrate W placed on the support 210 after wavelength compression by the wave plate.

Unlike the structure in which the electrodes are disposed on both sides of the substrate W, as in the semiconductor device manufacturing apparatuses 100 and 200 illustrated in FIGS. 2 and 3, the electric field application of the semiconductor device manufacturing apparatus 300 Part 240 is disposed only on the upper surface side of the substrate W and is disposed at a position spaced apart from the substrate W by a predetermined distance.

A high frequency electric field of about 300 MHz or higher can be applied perpendicularly to the main surface extending direction of the substrate W by using the electric field applying unit 240. In applying the post-exposure treatment process using the electric field applying unit 240, the diffusion of the acid and the deprotection reaction of the resist resin can be smoothly induced by applying the high-frequency electric field. In this case, the semiconductor device manufacturing apparatus 300 need not have a separate heating means for raising the temperature of the substrate W.

6 is a cross-sectional view schematically showing a main configuration of a semiconductor device manufacturing apparatus 400 according to some embodiments of the technical idea of the present invention.

The semiconductor device manufacturing apparatus 400 includes a heat exchanging part 120 provided on the supporting part 110 for dispersing heat from a substrate W which is an object of post-exposure post processing supported on the supporting part 210, The semiconductor device manufacturing apparatus 300 has substantially the same configuration as the semiconductor device manufacturing apparatus 300 described with reference to FIG.

The heat exchanging part 120 may be disposed on the support part 210 so that the heat exchanging part 120 may contact the substrate W while the substrate W is placed on the supporting part 210. [ A detailed configuration of the heat exchanging unit 120 is as described with reference to FIGS. 4A and 4B.

7 is a cross-sectional view schematically showing a main configuration of a semiconductor device manufacturing apparatus 500 according to some embodiments of the technical concept of the present invention.

7, an apparatus 500 for manufacturing a semiconductor device includes an electromagnetic wave radiation (EM) applied to the substrate W during a post-exposure treatment process for the substrate W supported on the support 110, 3, except that it further includes an electromagnetic wave supply unit 510 for supplying the electromagnetic wave to the semiconductor wafer W. The semiconductor wafer manufacturing apparatus 500 shown in FIG.

The electromagnetic wave supply unit 510 is disposed at a position facing the support surface 112 of the support unit 110 and spaced from the support surface 112 with the upper electrode 142 interposed therebetween. An electromagnetic wave having a wavelength of about 0.6 탆 to 1 mm can be supplied from the electromagnetic wave supplying unit 510.

The electromagnetic wave supply unit 510 may include an infrared lamp, a solid-state laser, a Ni-Cr hot wire, a ceramic heater, or a quartz heater. In some embodiments, the electromagnetic wave supply unit 510 may emit infrared rays. In some embodiments, the electromagnetic wave supply unit 510 may comprise an Xe lamp. In some other embodiments, the electromagnetic wave supply unit 510 may be composed of an Xe-Hg lamp. When the electromagnetic wave supplying part 510 is composed of a ceramic heater or a quartz heater, the electromagnetic wave supplying part 510 may provide a heat wavelength from ceramic or quartz. In some embodiments, the electromagnetic wave supply unit 510 may generate diode laser light having an oscillation wavelength of 808 nm.

The electromagnetic wave EM supplied from the electromagnetic wave supplying unit 510 may be transmitted to the substrate W supported on the supporting unit 110 through the upper electrode 142. In some embodiments, the upper electrode 142 may have a mesh structure. In some other embodiments, the upper electrode 142 may be a transparent electrode. A more detailed configuration of the upper electrode 142 will be described later with reference to Figs. 8A and 8B.

8A is a plan view of an exemplary electrode 540 that can be employed as the upper electrode 142 in the semiconductor device manufacturing apparatus 500 of FIG. 8B is a sectional view taken along line 8B-8B 'in FIG. 8A. 8C is a sectional view taken along the line 8C - 8C 'in FIG. 8A.

8A to 8C, the electrode 540 includes a mesh-shaped electrode layer 544 defining a plurality of through-holes 542 arranged in a matrix.

Although the plurality of through holes 542 are illustrated as having a substantially rectangular shape, the present invention is not limited thereto. By designing the planar structure of the electrode layer 544 variously, the plurality of through holes 542 can have various shapes such as a circle, an ellipse, a triangle, a pentagon, and a hexagon.

The electrode layer 544 is made of a conductive material. In some embodiments, the electrode layer 544 may be made of opaque, translucent, or transparent material. The electrode layer 544 may be formed of a metal, a metal oxide, or an organic material. In some embodiments, the electrode layer 544 may comprise Al, Au, Ag, or Cu. In some other embodiments, the electrode layer 544 may comprise ITO, ZnO, SnO ₂ , or In ₂ O ₃ . In some other embodiments, the electrode layer 544 may comprise a conductive polymer, a carbon nanotube, or a graphene.

8A to 8C is used as the upper electrode 142 in the semiconductor device manufacturing apparatus 500 of FIG. 7, the electromagnetic wave EM supplied from the electromagnetic wave supplying unit 510 is applied to the electrode Through the plurality of through holes 542 formed in the supporting portions 110 and 540, and transferred to the substrate W supported on the supporting portions 110. [

9A is a plan view of an exemplary electrode 550 that may be employed as the top electrode 142 in the semiconductor device manufacturing apparatus 500 of FIG. 9B is a sectional view taken along line 9B-9B 'in FIG. 9A. 9C is a sectional view taken along line 9C-9C 'in Fig. 9A.

9A to 9C, the electrode 550 includes a net-like electrode layer 554 defining a plurality of through-holes 552 arranged in a matrix form, and a transparent substrate 558 for supporting the electrode layer 554 ).

Although the plurality of through holes 552 are illustrated as having a substantially rectangular shape, the present invention is not limited thereto. The shape of the electrode layer 554 may be variously designed so that the plurality of through holes 542 may have various shapes such as a circle, an ellipse, a triangle, a pentagon, and a hexagon.

Details of the electrode layer 554 are substantially the same as those described for the electrode layer 544 with reference to FIGS. 8A to 8C.

The transparent substrate 558 may be made of transparent glass, Al ₂ O ₃ , Ga ₂ O ₃ , LiGaO ₂ , LiAlO ₂ , or MgAl ₂ O ₄ .

9A to 9C are used as the upper electrode 142 in the semiconductor device manufacturing apparatus 500 of FIG. 7, the electromagnetic wave EM supplied from the electromagnetic wave supplying unit 510 is applied to the electrode Through a plurality of through holes 552 formed in the support member 550 and a substrate W supported on the support unit 110 through the transparent substrate 558.

10 is a flowchart showing the steps of a cooling process by the heat exchanging unit 120 in the semiconductor device manufacturing apparatus 500 of FIG. 7, an electric field application process by the electric field applying unit 140, FIG. 4 is a graph showing on / off timing of an electromagnetic wave (EM) supply process. FIG. In Fig. 10, the case where the light hv is applied as the electromagnetic wave EM will be described as an example.

By using the semiconductor device manufacturing apparatus 500 for performing the post-exposure post-treatment process on the substrate W, the movement distance in the vertical direction is increased while minimizing the diffusion of the acid generated by exposure in the horizontal direction , Even when exposure is performed using a relatively low dose, the resolution can be improved and a pattern having uniform CD scattering can be formed. In order to maximize the effect obtained from the technical ideas of the present invention, the process as illustrated in FIG. 10 can be applied.

7 and 10, when starting the post-exposure post-treatment process for the substrate W, the power source 146 of the electric field applying unit 140 is turned on, The electric field EF is applied first. When the electric field EF is applied to the substrate W, the power source of the electromagnetic wave supplying unit 510 is turned on and an electromagnetic wave hv is applied to the substrate W to transmit heat to the substrate W do.

When the post-exposure process for the substrate W is completed, the power source of the electromagnetic wave supply unit 510 is turned off in a state in which the electric field EF is applied to the substrate W, Thereby blocking heat from being generated. It is possible to stop applying the electric field EF to the substrate W by turning off the power source 146 of the electric field applying unit 140 after turning off the electric power of the electromagnetic wave supplying unit 510. [

In some other embodiments, unlike the case shown in Fig. 10, the start of application of the electric field (EF) and the start of irradiation of light ( hv ) using the electromagnetic wave supply unit 510 can be performed at the same time. Likewise, the application of the electric field EF and the end of the irradiation of light hv can be performed at the same time.

While the electric field EF is applied to the substrate W to increase the moving distance of the acid generated by exposure in the vertical direction in the photoresist film formed on the substrate W, When the power source 146 of the electric field applying unit 140 and the power of the electromagnetic wave supplying unit 510 are simultaneously turned OFF when the substrate W is irradiated with the light hv by heating the substrate W, The radiant heat from the light source constituting the electromagnetic wave supplying unit 510 can affect the temperature of the substrate W even after the application of the electromagnetic wave EF to the substrate W. Therefore, During the application of heat, the COOLing process by the heat exchanging unit 120 may be operated to cool the substrate W or make the temperature according to the position on the substrate W uniform.

10, the heating process of the substrate W using the light hv supplied from the electromagnetic wave supply unit 510 and the process of heating the substrate W by the heat exchanging unit 120 may be performed, ) Can be started at the same time. The heating process of the substrate W using the electromagnetic wave supplying unit 510 and the cooling process of the substrate W by the heat exchanging unit 120 may be started at different time intervals in some other embodiments . If necessary, the heating process by the electromagnetic wave supply unit 510 may be started first, or the cooling process by the heat exchanging unit 120 may be started first. Heat is transferred to the substrate W by the irradiation of the light hv on the upper surface side of the substrate W and cooling or heat exchange of the substrate W is performed by the heat exchange unit 120 on the lower surface side of the substrate W Lt; / RTI > Therefore, in the photoresist film on the substrate W, the deprotection reaction of the resist resin is promoted by the heat transmitted from the light hv , and the cooling or the heat exchange by the heat exchange unit 120 is performed on the bottom surface side of the substrate W , It is possible to reduce the CD deviation due to the temperature difference depending on the position in one substrate (W). In addition, when performing a post-exposure post-treatment process sequentially on a plurality of substrates W, it is possible to suppress the CD deviation between the substrates due to the temperature difference between the substrates.

10, after the irradiation of the light hv by the electromagnetic wave supplying unit 510 and the application of the electric field EF by the electric field applying unit 140 are completed, The COOLING process of the substrate W using the substrate 120 can be terminated. 10 illustrates that the cooling process of the substrate W using the heat exchanging unit 120 is completed after the application of the electric field EF by the electric field applying unit 140 is completed. However, the technical idea of the present invention is not limited thereto. In some embodiments, the application of the electric field EF by the electric field applying unit 140 and the COOLING process of the substrate W using the heat exchanging unit 120 may be concurrently ended.

In the processing step after the exposure for the substrate (W), the electromagnetic wave supplying section 510 to by even after the light (hv) is then irradiated to the substrate (W), the irradiation of the electromagnetic wave supply unit light (hv) by 510 end Radiation heat in the light source affects the substrate W, which may cause problems such as unwanted acid diffusion and the like. 10, after the irradiation of the light hv by the electromagnetic wave supplying unit 510 is completed, the cooling process of the substrate W using the heat exchanging unit 120 with a predetermined time lag It is possible to prevent problems such as undesired diffusion of the acid on the substrate W after the irradiation of the light hv is completed. Therefore, the CD uniformity in the substrate W can be improved, and the occurrence of CD deviation between the substrates can be suppressed.

11 is a cross-sectional view schematically showing a main configuration of a semiconductor device manufacturing apparatus 600 according to some embodiments of the technical idea of the present invention.

Referring to FIG. 11, the semiconductor device manufacturing apparatus 600 includes a support 110 and an electric field applying unit 140, similar to the semiconductor device manufacturing apparatus 100 illustrated in FIG. The semiconductor device manufacturing apparatus 600 includes an electrode structure 640 including the electrode 550 illustrated in FIGS. 9A to 9C as the upper electrode 142 of the electric field applying unit 140.

The semiconductor device manufacturing apparatus 600 may further include an electromagnetic field applying unit 140 for applying electromagnetic waves to the substrate W during the post-exposure process using the electric field applying unit 140 to the substrate W supported on the supporting unit 110 And an electromagnetic wave supplying unit 510 for supplying electromagnetic waves.

The electrode structure 640 includes a reversible thermochromic film 642 capable of opening or blocking a path through which the electromagnetic wave supplied from the electromagnetic wave supplying unit 510 is transmitted to the supporting surface 112 side of the supporting unit 110 ).

The electrode 550 includes a transparent substrate 558 and an electrode layer 554 formed on the first surface 558A of the transparent substrate 558. [ The electrode layer 554 may be a transparent electrode having a net shape.

The reversible thermochromic film 642 may be formed on a second surface 558B of the transparent substrate 558 opposite to the first surface 558A. In FIG. 11, the reversible thermochromic film 642 is in contact with the second surface 558b of the transparent substrate 558, but the technical idea of the present invention is not limited thereto. In some embodiments, the reversible thermochromic film 642 may be disposed at a location spaced apart from the transparent substrate 558. For example, the reversible thermochromic film 642 may be laminated on a separate support substrate (not shown) in a space between the electromagnetic wave supply unit 510 and the electrode 550. The supporting substrate may be a transparent substrate. Alternatively, the support substrate may be a mesh-type opaque substrate or a semi-transparent substrate that provides a space through which light can pass.

The reversible thermochromic film 642 is capable of converting between an opaque state that prevents transmission of light according to temperature and a transparent or semi-transparent state in which light can be transmitted.

In some embodiments, a temperature regulator (not shown) for regulating the temperature of the reversible thermochromic film 642 may be connected to the reversible thermochromic film 642. In some other embodiments, the reversible thermochromic film 642 may be converted between an opaque state that prevents transmission of light by heat transmitted from the electromagnetic wave supply unit 510, and a transparent or translucent state that allows transmission of light have.

12 is a graph for explaining hysteresis characteristics in the color density-temperature curve of the reversible thermochromic film 642. FIG.

In Fig. 12, T1 is the coloring temperature, T2 is the color development initiation temperature, T3 is the decoloring initiation temperature, and T4 is the complete decoloring temperature. In Fig. 12, the temperature interval between T1 and T4 is a temperature interval in which the reversible thermochromic film 642 can be discolored. In some embodiments, the maximum hysteresis width [Delta] T in the hysteresis characteristic of the reversible thermochromic film 642 can be selected within the range of about 8 to 110 [deg.] C. The maximum hysteresis width? T can be variously selected by controlling the material and the content constituting the reversible thermochromic film 642.

In some embodiments, the reversible thermochromic film 642 may comprise a polymer film and the reversible thermochromic materials contained within the polymer film. The reversible thermochromic materials may be encapsulated thermal-sensitive liquid crystals.

In some other embodiments, the reversible thermochromic film 642 can be obtained from a reversible thermochromic composition rotor comprising an electron donative color-forming compound, an electron-accepting compound, and a solvent. The reversible thermochromic composition can exhibit a colored hue in a crystalline state by the interaction of the electron-donating compound with the electron-accepting compound. When the reversible thermochromic film 642 reaches a specific temperature, the electron-accepting compound is separated and becomes colorless, and the interaction between the electron-donating color-forming compound and the electron-accepting compound is stopped.

In some embodiments, the electron donative color-forming compound included in the reversible thermochromic composition includes diphenylmethane phthalides, phenylindolyl phthalides, indolyl phthalides ( indolyl phthalides, diphenylmethane azaphthalides, phenylindolyl azaphthalides, fluorans, styrylquinolines, or diazolidaminolactones (for example, diazarhodamine lactones.

As the electron-accepting compound contained in the reversible thermochromic composition, a compound group having an active proton or a group consisting of a pseudo-acid compound group (pseudo compound) which is not an acid, -acidic compounds. The group of compounds having an active proton may include a compound having a phenolic hydroxyl group, for example, monophenols or polyphenols.

As the solvent contained in the reversible thermochromic composition, esters, ketones, ethers, alcohols, or acid amides may be included.

In some embodiments, the reversible thermochromic composition can be microencapsulated to form the reversible thermochromic film (642). At this time, as materials of the microcapsules, epoxy resin, urea resin, urethane resin, isocyanate resin and the like can be used.

FIGS. 13A and 13B are views for explaining the function of the reversible thermochromic film 642 which opens or blocks the path through which the electromagnetic wave supplied from the electromagnetic wave supplying unit 510 is transmitted to the supporting unit 110 side.

More specifically, FIG. 13A is a cross-sectional view illustrating a case where light ( hv ) from the electromagnetic wave supply unit 510 passes through the reversible thermochromic film 642A that has been converted into a transparent or translucent state by temperature control.

Figure 13b do not reversible thermochromic film (642B) is converted to an opaque state by the temperature control the transmission of light (hv) from the electromagnetic wave supply part 510, the light (hv) from the resulting electromagnetic wave supply part 510 Is blocked by the reversible thermochromic film 642B.

The supply of the electromagnetic wave in the photoresist film on the substrate W due to the residual heat remaining in the electromagnetic wave supply part 510 or around the electromagnetic wave supplying part 510 may be stopped after the supply of the electromagnetic wave from the electromagnetic wave supplying part 510 is turned off, Unwanted diffusion in the horizontal direction can be achieved. In order to prevent such a phenomenon, it is necessary to maintain the ON state of the electric field applying unit 140 for a predetermined time after the supply of the electromagnetic wave is turned off, so that the electric field in the vertical direction is continuously applied to the substrate W.

When the reversible thermochromic film 642 is disposed between the electromagnetic wave supply unit 510 and the support unit 110 as shown in FIG. 11, after the electromagnetic wave supply from the electromagnetic wave supply unit 510 is turned off, The reversible thermochromic film 642 in which the remaining heat remaining in the substrate 510 or around the substrate W is transferred to the substrate W can be used. Therefore, when the reversible thermochromic film 642 is disposed between the electromagnetic wave supplying part 510 and the supporting part 110, the supply of the electromagnetic wave from the electromagnetic wave supplying part 510 is turned off, It is not necessary to maintain the ON state of the electric field applying unit 140 for a predetermined time to prevent diffusion in the direction of the electric field. The temperature of the reversible thermochromic film 642 is controlled to control the temperature of the reversible thermochromic film 642 while the post-exposure processing process is performed on the substrate W using the semiconductor device manufacturing apparatus 600 of FIG. For example, light can be transmitted from the electromagnetic wave supplying unit 510 through the reversible thermochromic film 642 to the substrate W on the supporting unit 110 by making the polarizing film 642 transparent or semitransparent. After the power supply to the electromagnetic wave supplying unit 510 is turned off to terminate the post-exposure processing, the temperature of the reversible thermochromic film 642 is controlled to become opaque, Can be prevented from being transferred to the substrate W on the support portion 110. [ Accordingly, since the operation time of the electric field applying unit 140 can be reduced, the process cost can be reduced and the productivity can be improved.

14 is a cross-sectional view schematically showing a main configuration of a semiconductor device manufacturing apparatus 700 according to some embodiments of the technical idea of the present invention.

The semiconductor device manufacturing apparatus 700 includes a heat exchanging unit 120 provided on the supporting unit 110 for dispersing the heat of the substrate W subjected to the post- And has substantially the same structure as the semiconductor device manufacturing apparatus 600 described with reference to FIG.

The heat exchanging part 120 may be disposed on the upper side of the supporting part 110 so that the outer wall of the heat exchanging part 120 may contact the substrate W in a state where the substrate W is placed on the supporting surface 112 of the supporting part 110. [ As shown in FIG. A detailed configuration of the heat exchanging unit 120 is as described with reference to FIGS. 4A and 4B.

15 is a cross-sectional view schematically showing a main configuration of a semiconductor device manufacturing apparatus 800 according to some embodiments of the technical idea of the present invention.

15, a semiconductor device manufacturing apparatus 800 includes a substrate W supported on a supporting portion 110 for providing an electromagnetic wave (EF) to the substrate W while an exposure post-treatment process is performed on the substrate W And has substantially the same configuration as the semiconductor device manufacturing apparatus 100 illustrated in Fig. 2, except that it further includes an electromagnetic wave supply unit 810. Fig.

The electromagnetic wave supplying unit 810 is provided on the substrate W supported on the supporting unit 110 with an electric field application space SP between the supporting unit 110 and the upper electrode 142 interposed therebetween, And provides an electromagnetic wave (EM). The electromagnetic wave supply unit 810 is disposed at a position higher than the support surface 110 and away from the electric field application space SP. The direction in which the electromagnetic wave EM supplied from the electromagnetic wave supplying unit 810 is supplied to the substrate W is applied to the substrate W between the upper electrode 142 and the lower electrode 144 of the electric field applying unit 140 Which is different from the application direction of the applied electric field EF. The application direction of the electric field EF to the substrate W and the application direction of the electromagnetic wave EM intersect each other in the electric field application space SP of the semiconductor device manufacturing apparatus 800. [ The details of the electromagnetic wave supplying unit 810 will be described with reference to the electromagnetic wave supplying unit 510 with reference to FIG.

16 is a cross-sectional view schematically showing a main configuration of a semiconductor device manufacturing apparatus 900 according to some embodiments of the technical idea of the present invention.

The semiconductor device manufacturing apparatus 900 includes a heat exchanging unit 120 installed on the supporting unit 110 to disperse heat of the substrate W while the post-exposure processing process is performed on the substrate W supported on the supporting unit 110, And has substantially the same configuration as the semiconductor device manufacturing apparatus 800 described with reference to Fig.

The heat exchanging part 120 may be disposed on the supporting part 110 so that the outer wall of the heat exchanging part 120 may contact the substrate W while the substrate W is placed on the supporting surface 112 of the supporting part 110. [ As shown in FIG. A detailed configuration of the heat exchanging unit 120 is as described with reference to FIGS. 4A and 4B.

17 is a cross-sectional view schematically showing a main configuration of a semiconductor device manufacturing apparatus 1000 according to some embodiments of the technical idea of the present invention.

17, the apparatus 1000 for manufacturing a semiconductor device includes a substrate W supported on a supporting member 110 for providing an electromagnetic wave (EM) to the substrate W while the post- And has substantially the same structure as the semiconductor device manufacturing apparatus 200 illustrated in Fig. 3, except that it further includes an electromagnetic wave supply unit 910. Fig.

The electromagnetic wave supply unit 910 is disposed at a position spaced apart from the supporting surface 112 of the supporting part 110 in the electric field application space SP between the supporting part 110 and the upper electrode 142 of the electric field applying part 140 And provides electromagnetic waves (EM) to the substrate W at a location spaced apart from the substrate W supported on the support surface 112. In some embodiments, the details of the electromagnetic wave supply unit 910, except that the electromagnetic wave supply unit 910 is made of a transparent or translucent material, are the same as those described for the electromagnetic wave supply unit 510, similar.

In some embodiments, the electromagnetic wave supply 910 may include a transparent quartz infrared heater lamp.

The semiconductor device manufacturing apparatus 1000 includes a heat exchanging unit 120 installed on a support 110 to disperse heat of a substrate W that is subjected to an exposure post-treatment process on a support 110. A detailed configuration of the heat exchanging unit 120 is as described with reference to FIGS. 4A and 4B. In some embodiments, the heat exchanging portion 120 may be omitted.

18 is a cross-sectional view schematically showing a main configuration of a semiconductor device manufacturing apparatus 1100 according to some embodiments of the technical idea of the present invention.

18, a semiconductor device manufacturing apparatus 1100 conveys heat to the substrate W during a post-exposure processing process on a substrate W supported on a support surface 112 of a support 110 The semiconductor device manufacturing apparatus 100 has substantially the same structure as the semiconductor device manufacturing apparatus 100 illustrated in FIG.

The insulating layer 920 is disposed to cover one surface of the upper electrode 142 between the upper electrode 142 and the supporting surface 112 of the supporting portion 110.

In some embodiments, the insulating film 920 is formed of a metal oxide film obtained by oxidizing a part of the upper electrode 142. For example, the upper electrode 142 is made of an Al film and the insulating film 920 is made of an Al ₂ O ₃ film obtained by oxidizing a surface of the upper electrode 142 facing the supporting surface 112 .

In some embodiments, an AC voltage is applied between the upper electrode 142 and the lower electrode 144 in the electric field applying unit 140 to move the acid in the vertical direction in the photoresist film on the substrate W The upper electrode 142 generates heat from the insulating film 920 and the heat from the insulating film 920 is applied to the substrate W .

Although not shown in FIG. 18, the support 110 may include a heat exchanger 120 as illustrated in FIG.

19 is a flowchart for explaining a method of manufacturing a semiconductor device according to embodiments of the present invention.

20A to 20D are cross-sectional views sequentially illustrating a process of manufacturing a semiconductor device according to a process sequence in accordance with the method illustrated in FIG.

A method of manufacturing an exemplary semiconductor device according to the technical idea of the present invention will be described with reference to FIG. 19 and FIGS. 20A to 20D.

In step P2, a photoresist film 1200 is formed on the substrate 1150 as illustrated in Fig. 20A.

The substrate 1150 may be a single layer of a single material, or multiple layers of a plurality of different materials. The multilayer may comprise a semiconductor layer, an insulating layer, a conductive layer, or a combination thereof. The substrate 1150 may include a patterned region or an etched region.

The photoresist film 1200 may be formed of a chemically amplified photoresist. The photoresist film 1200 may be obtained by coating a resist composition, a photoacid generator (PAG), and a solvent-based composition on a substrate 1150, followed by a soft bake process. Although not shown, an anti-reflection film may be formed between the substrate 1150 and the photoresist film 1200.

In step P4, as shown in FIG. 20B, a photomask 1220 is used to expose a part of the photoresist film 1200 to a predetermined depth from the top surface of the photoresist film 1200 to generate an acid .

(Extreme ultraviolet) exposure equipment, KrF (Krypton Fluoride) excimer laser (wavelength: 248 nm) exposure facility, ArF (Argon Fluoride) excimer laser (wavelength: 193 nm) exposure facility, i -Line (365 nm) exposure facility, and the like, but the present invention is not limited to the above-exemplified facilities.

For example, when a plurality of contact hole patterns having a width of several tens nm are to be formed from the photoresist film 1200 on the substrate 1150, EUV lithography Process can be used. The EUV lithography process is performed under vacuum. In the EUV lithography equipment, the power required for irradiating the laser with the light source is insufficient, so that exposure can be performed in the EUV lithography equipment such that the amount of acid dose can not be made sufficiently large. Accordingly, in the exposure process, exposure can be performed in a minimized dose so that only a part of the thickness of the photoresist film 1200 in the thickness direction of the photoresist film 1200 is exposed.

After the exposure process, the photoresist film 1200 may be divided into an exposure region 1240 and a non-exposure region 1260. In the exposed region 1240 of the photoresist film 1200, acid (PA) may be generated from the PAG contained in the photoresist film 1200. The acid PA generated by the exposure is diffused in the exposure region 1240 to induce the deprotection reaction of the resist resin constituting the photoresist film 1200 so that the crosslinking reaction of the resist resin can be caused.

In Step P6, an electric field EF is applied to the substrate 1150 perpendicularly to the main surface extending direction of the substrate 1150 by using the electric field applying portion 140 as illustrated in FIG. 20C, 1150 in order to diffuse the acid PA.

The acid PA in the exposure region 1240 is driven by an electric field due to the use of an electric field EF applied perpendicularly to the main surface extending direction of the substrate 1150 in order to diffuse the acid PA generated by the exposure, the diffusion in the horizontal direction is suppressed by the drift movement and the moving distance in the vertical direction as indicated by the arrow "V" is increased, so that the acid PA is moved in the vertical direction over the total thickness of the photoresist film 1200 The acid PA smoothly moves to the bottom surface of the photoresist film 1200. Therefore, even if the dose in the exposure process P2 is relatively small, the diffusion of the acid PA in the horizontal direction in the post-exposure process according to the process P4 is suppressed and the moving distance of the acid in the vertical direction is increased, The dimensional accuracy of the pattern to be formed on the substrate 1150 can be improved and critical dimension (CD) uniformity can be improved.

In some embodiments, the post-exposure post-treatment process according to process P6 may be performed for about 1 to 90 seconds.

The post-exposure post-treatment process according to the process P6 can be performed using the semiconductor device manufacturing apparatuses 100, 200, 300, 400, 500, 600, 700, 800, 900, 1000 and 1100 described with reference to FIGS. 2 to 18 have.

For example, when the semiconductor device manufacturing apparatus 500 illustrated in FIG. 7 is used, the electromagnetic field supply unit 510, which is spaced apart from the substrate 1150 with the upper electrode 142 therebetween, It is possible to irradiate the electromagnetic wave EM transmitted through the upper electrode 142 of the portion 140, for example, light to the exposed photoresist film 1200. Heat is applied to the substrate 1150 by the irradiation of the electromagnetic wave EM to accelerate the diffusion of acid PA in the photoresist film 1200 and the deprotection reaction of the resist resin. In some embodiments, the temperature of the substrate 110 may be maintained at about 80-200 [deg.] C by irradiation of the electromagnetic wave EM.

In the semiconductor device manufacturing apparatus 500 illustrated in FIG. 7, similar effects to those described above can be obtained when the electric field applying unit 240 illustrated in FIGS. 5 and 6 is used instead of the electric field applying unit 140.

In the post-exposure processing step shown in steps P6 and 20C, for example, the semiconductor device manufacturing apparatus 100 shown in FIG. 2 is used, and about 300 (about 300) is formed between the upper electrode 142 and the lower electrode 144 A high frequency electric field of MHz or higher can be applied. In this case, it is not necessary to provide the substrate 1150 with additional heat for accelerating acid (PA) diffusion and deprotection reaction of the resist resin.

In some embodiments, in carrying out the post-exposure treatment process illustrated in Processes P6 and 20C, the acid diffusion in the horizontal direction within the photoresist film 1200 is minimized, In order to maximize the uniformity improvement effect, the process as illustrated in Fig. 10 can be applied. That is, when an exposure post-treatment process is started for the exposed photoresist film 1200, an electric field is applied to the substrate 1150 first. Then, in a state in which an electric field is applied to the substrate 1150, a process of supplying electromagnetic waves to the substrate 1150 is started to transfer heat to the substrate 1150. When the post-exposure process is completed for the exposed photoresist film 1200, the electromagnetic wave supply is turned off in a state where an electric field is applied to the substrate 1150. Then, after the elapse of a predetermined time after the supply of the electromagnetic wave is turned off, the electric field application to the substrate 1150 can be turned off. In some embodiments, after the electromagnetic wave supply to the substrate 1150 is turned off, the reversible thermochromic film 642 illustrated in Fig. 11 is used to prevent the residual heat from being transferred to the substrate 1150 . For example, after the electromagnetic wave supply to the substrate 1150 is turned off, the temperature of the reversible thermochromic film 642 is changed so that the reversible thermochromic film 642 can transmit electromagnetic waves, for example, light It is possible to prevent the residual heat from being transferred to the substrate 1150 even after the electromagnetic wave supply is turned off.

In some other embodiments, the initiation of application of an electric field to substrate 1150 and the initiation of electromagnetic wave supply may be performed simultaneously. Similarly, the termination of the electric field application and the termination of the electromagnetic wave supply may be simultaneously performed.

In order to increase the moving distance of the acid in the vertical direction within the photoresist film 1200 by using the electric field, the electric field and / or the electromagnetic wave are applied, or after the application of the electric field and / 10, in order to reduce the CD deviation according to each position and to prevent the radiant heat from the electromagnetic wave supplying part, especially the light source, from affecting the temperature of the substrate 1150, the electromagnetic wave supplying process and the heat exchange It is possible to simultaneously start the cooling process of the substrate 1150 using the substrate 120. Alternatively, the electromagnetic wave applying step and the cooling step of the substrate 1150 using the heat exchanging part 120 can be started with a time lag, respectively. If necessary, the electromagnetic wave applying process may be started first, and the cooling process of the substrate 1150 by the heat exchanging unit 120 may be started first. Accordingly, heat may be applied to the top surface of the photoresist film 1200 by application of electromagnetic waves, and cooling or heat exchange may be performed by the heat exchanging unit 120 on the bottom surface of the photoresist film 1200. The movement distance of the acid in the vertical direction in the exposure region is increased due to the influence of the electromagnetic wave in the photoresist film 1200, so that the deprotection reaction of the resist resin in the thickness direction of the photoresist film 1200 can smoothly occur, On the bottom surface side of the resist film 1200, cooling or heat exchange by the heat exchanging unit 120 can be performed.

After the supply of the electromagnetic wave to the substrate 1150 and the application of the electric field are completed, the cooling process of the substrate 1150 using the heat exchanging unit 120 can be finished at a predetermined time difference. Alternatively, the termination of the application of the electric field and the termination of the cooling process of the substrate 1150 may be performed at the same time.

In performing the post-exposure post-treatment process according to the process P6, the cooling process of the substrate 1150 using the heat exchanging unit 120 is included, thereby reducing the CD deviation depending on the position in the substrate 1150. [ In addition, when performing a post-exposure post-treatment process sequentially on a plurality of substrates, it is possible to suppress the CD deviation between the substrates due to the temperature difference between the substrates.

In step P8, as shown in FIG. 20D, the photoresist film 1200 is developed to form a photoresist pattern 1200P having a contact hole 1200H.

In order to develop the photoresist film 1200, a basic developer, for example, 2.38 wt% tetramethyl ammonium hydroxide (TMAH) developer may be used. If necessary, the photoresist pattern 1200P can be rinsed with deionized water after development.

According to the method of manufacturing a semiconductor device according to the technical idea of the present invention, acid diffusion in the horizontal direction in the photoresist film 1200 by application of an electric field in a direction perpendicular to the main surface of the substrate 1150 during the photolithography process It is possible to improve the resolution and improve the dimensional accuracy of the photoresist pattern 1200P by increasing the travel distance of the acid in the vertical direction. Particularly, even when a relatively small amount of acid generated by a relatively low dose occurs at the time of exposure, the moving distance of the acid in the vertical direction is increased, and the deprotection reaction of the resist resin is sufficiently generated, whereby the productivity of the photolithography process can be improved have.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, This is possible.

The semiconductor device manufacturing apparatus according to any one of claims 1 to 3, wherein the semiconductor device is a semiconductor device. Electrode, 144: lower electrode, 146: power supply, 240: electric field application unit, 244: wave guide, 246: microwave radiation member, 510: electromagnetic wave supply unit, 540, 550: electrode, reversible thermochromic film, 810, An electromagnetic wave supply unit, 920: an insulating film, 1150: a substrate, 1200: a photoresist film, 1200H: a contact hole.

Claims (10)

A support portion having a support surface for supporting the substrate,
An electric field applying unit for applying an electric field perpendicular to a main surface extending direction of the substrate;
And a heat exchanger provided on the support for dispersing heat of the substrate. The method according to claim 1,
The electric field applying unit
An upper electrode,
A lower electrode,
And a power source connected to the upper electrode and the lower electrode to apply an electric field between the upper electrode and the lower electrode. The method according to claim 1,
The electric field applying unit
And an electrode facing the support surface with an electric field applied space therebetween on the support portion. The method of claim 3,
Further comprising an electromagnetic wave supply unit disposed at a position facing the support surface with the electrode interposed therebetween. The method of claim 3,
Further comprising an electromagnetic wave supply unit disposed between the electrode and the support unit at a position spaced apart from the support surface. 6. The method of claim 5,
Wherein the electromagnetic wave supply unit is disposed at a position deviated from the electric field application space at a higher level than the support surface in order to provide an electromagnetic wave incident on the substrate through the electric field application space. Forming a photoresist film on the substrate,
Exposing a part of the photoresist film to a predetermined depth from an upper surface of the photoresist film to generate an acid;
A step of diffusing the acid in the photoresist film by applying an electric field to the substrate in a direction perpendicular to a main surface extending direction of the substrate,
And developing the photoresist film to form a photoresist pattern. 8. The method of claim 7,
Wherein the step of diffusing the acid comprises the step of applying heat to the photoresist film using an electromagnetic wave incident from an upper surface of the photoresist film. 8. The method of claim 7,
The step of diffusing the acid
Applying heat to the photoresist film using heat transmitted from an upper surface of the photoresist film;
And discharging the heat of the substrate to the outside from the bottom surface of the substrate while applying heat to the photoresist film. 8. The method of claim 7,
Wherein the step of diffusing the acid comprises the step of applying heat to the photoresist film by using electromagnetic waves incident on the upper surface of the photoresist film in a direction different from a direction in which the electric field is applied .

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