KR20140078184A - Waveguide structure and arrayed-waveguide grating structure including the same - Google Patents

Waveguide structure and arrayed-waveguide grating structure including the same Download PDF

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Publication number
KR20140078184A
KR20140078184A KR1020120147249A KR20120147249A KR20140078184A KR 20140078184 A KR20140078184 A KR 20140078184A KR 1020120147249 A KR1020120147249 A KR 1020120147249A KR 20120147249 A KR20120147249 A KR 20120147249A KR 20140078184 A KR20140078184 A KR 20140078184A
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South Korea
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pattern
section
waveguide
arrayed
width
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KR1020120147249A
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Korean (ko)
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박재규
박상기
김경옥
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한국전자통신연구원
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Priority to KR1020120147249A priority Critical patent/KR20140078184A/en
Publication of KR20140078184A publication Critical patent/KR20140078184A/en

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/02—Optical fibres with cladding with or without a coating
    • G02B6/02004—Optical fibres with cladding with or without a coating characterised by the core effective area or mode field radius
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/02—Optical fibres with cladding with or without a coating
    • G02B6/036—Optical fibres with cladding with or without a coating core or cladding comprising multiple layers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
    • G02B6/12009—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer comprising arrayed waveguide grating [AWG] devices, i.e. with a phased array of waveguides
    • G02B6/12011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer comprising arrayed waveguide grating [AWG] devices, i.e. with a phased array of waveguides characterised by the arrayed waveguides, e.g. comprising a filled groove in the array section
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/125—Bends, branchings or intersections
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/28—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
    • G02B6/2804—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals forming multipart couplers without wavelength selective elements, e.g. "T" couplers, star couplers

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

 A waveguide structure and an array-waveguide grating having the waveguide structure are provided. The waveguide structure may include a lower clad, an upper clad covering the core pattern provided on the lower clad with the etched side wall, a beam defining pattern covering the upper surface of the core pattern, and a core pattern provided with the beam defining pattern. The beam defining pattern may be formed of a material having a refractive index larger than that of the upper clad and smaller than that of the core pattern, and may be formed to have a line width smaller than that of the core pattern.

Description

WAVEGUIDE STRUCTURE AND ARRAYED-WAVEGUIDE GRATING STRUCTURE INCLUDING THE SAME BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a waveguide structure,

The present invention relates to photonics technology, and more particularly to a waveguide structure and an array-waveguide grating having the same.

Currently, silica based array-waveguide gratings are used in optical communications. However, since the silica-based array-waveguide grating has a size of about several cm < 2 > or more, there are technical difficulties such as low productivity, In order to overcome the technical difficulties in the silica-based array-waveguide grating, a silicon-based array-waveguide grating with a small size (approximately several hundred um2) has been proposed.

However, the silicon-based array-waveguide grating has various technical difficulties due to the fluctuation of the sidewall profile of the waveguide because of the large refractive index difference between the core layer and the cladding layer. For example, in the silicon-based array-waveguide grating, the non-uniformity of the sidewall profile of the waveguide can lead to technical difficulties such as large phase error and degradation of wavelength reproducibility and crosstalk characteristics. Thus, despite the advantages of small size, this phase error problem has made it difficult to commercialize the silicon-based array-waveguide grating.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a waveguide structure capable of reducing overlap between an optical mode and side walls of a waveguide.

It is another object of the present invention to provide an array-waveguide grating whose phase error characteristic has a reduced dependence on the uniformity of the sidewall profile of the waveguide.

It is another object of the present invention to provide an array-waveguide grating in which its wavelength reproducibility and crosstalk characteristics have a reduced dependence on the uniformity of the sidewall profile of the waveguide.

According to some embodiments of the present invention, the waveguide structure includes a lower clad, a core pattern provided on the lower clad with an etched side wall, a beam defining pattern covering the upper surface of the core pattern, And an upper clad covering the core pattern. The beam defining pattern may be formed of a material having a refractive index larger than that of the upper clad and smaller than that of the core pattern, and may have a line width smaller than that of the core pattern.

In some embodiments, the core pattern is formed of silicon, the upper clad is formed of silicon oxide, and the beam defining pattern is formed of silicon nitride.

In some embodiments, the beam defining pattern may be formed to have a structure in which the rate of change in thickness along its height is substantially zero.

In some embodiments, the core pattern may have at least one curved section. In this case, on the curved section of the core pattern, the distance between the beam defining pattern and the sidewalls of the core pattern may be different from each other.

In some embodiments, the core pattern may have a first curved section with a first radius of curvature and a second curved section with a second radius of curvature that is less than the first radius of curvature. The distance between the beam defining pattern and the inner sidewall of the core pattern may be smaller than the distance between the beam defining pattern and the outer sidewall of the core pattern.

In some embodiments, on the second curved section, the beam defining pattern may be formed to have a varying width along its traveling direction.

In some embodiments, on the second curved section, the beam defining pattern may comprise a plurality of triangular pieces arranged along the core pattern.

In some embodiments, each of the triangular pieces may be disposed such that one of its vertices is adjacent to an outer sidewall of the core pattern, and the remaining vertices are adjacent to an inner sidewall of the core pattern.

According to some embodiments of the present invention, the array-waveguide grating includes an input star coupler, an output star coupler, arrayed waveguides that optically couple the input and output star couplers, and a beam limiting pattern Lt; / RTI > In this case, at least one of the arrayed waveguides has a linear section and at least one bending section, at least one of the beam defining patterns includes a first part positioned on the straight section and a second section positioned on the bending section The first portion may have a line shape having a line width smaller than that of the arrayed waveguide, and the second portion may have a triangular shape having a width varying along the traveling direction of the core pattern.

In some embodiments, the array-waveguide grating may further include an upper cladding provided on the input and output star couplers, the arrayed waveguides, and the beam defining patterns. In this case, the beam limiting patterns may be formed of a material that is larger than the upper clad and has a smaller refractive index than the arrayed waveguides.

In some embodiments, the arrayed waveguides are formed of silicon, the upper clad is formed of silicon oxide, and the beam defining pattern is formed of silicon nitride.

In some embodiments, the beam defining pattern may be formed to expose a corresponding top surface of the arrayed waveguides located beneath it.

In some embodiments, at least one of the arrayed waveguides may further include a gentle bending section having a curvature between the bending section and the straight section.

In some embodiments, on the gentle bending section, the beam defining pattern may be formed to have a substantially uniform thickness along the traveling direction of the arrayed waveguide. In addition, distances between the beam limiting pattern and the sidewalls of the array waveguide located under the beam limiting pattern may be different from each other.

In some embodiments, on the gentle bending section, the distance between the beam defining pattern and the inner side wall of the arrayed waveguide located beneath the beam defining pattern is smaller than the beam defining pattern and the outer side of the arrayed waveguide May be less than the distance between the side walls.

In some embodiments, the second portion has one of its vertices adjacent to the outer sidewall of the arrayed waveguide located beneath it, and the remaining vertexes are located on the inner sidewall of the arrayed waveguide As shown in FIG.

In some embodiments, the beam defining pattern may have a decreasing width at the top of the input and output star couplers, away from the arrayed waveguide.

In some embodiments, the arrayed waveguide may further include a transition section between the straight section and the bent section. In this case, the width of the straight section may be greater than the width of the bending section, and the width of the transition section may be reduced from the width of the straight section to the width of the bending section.

According to some embodiments of the present invention, a beam limiting pattern is disposed on the lip waveguide. The beam limiting pattern may be formed to have a smaller width than the lip waveguide. The existence of the beam limiting pattern with such a reduced width can prevent the optical mode passing through the lip waveguide from overlapping with the side wall of the lip waveguide. Thus, it is possible to prevent the phase change of the optical mode due to the unevenness of the sidewall profile of the lip waveguide, which makes it possible to improve characteristics such as phase error problem, wavelength reproducibility, and crosstalk in the arrayed waveguide grating .

1 is a plan view illustrating an exemplary array-waveguide grating of a photonic device according to some embodiments of the present invention.
Fig. 2 is a perspective view exemplarily showing a part of the arrangement-waveguide grating of Fig. 1. Fig.
3 is an enlarged perspective view of a portion of Fig.
4 is a simulation image provided to explain one aspect of the waveguide structure of the photonics device according to some embodiments of the present invention.
5 is a view provided to explain one aspect of a waveguide structure of a photonics device according to some embodiments of the present invention.
Figs. 6 and 7 are simulation images showing the difference in beam mode according to the presence and absence of the beam limiting pattern according to the embodiments of the present invention. Fig.
8 is a perspective view illustrating a portion of an array-waveguide grating in accordance with some embodiments of the present invention.
9 is a perspective view illustrating another portion of an array-waveguide grating in accordance with some embodiments of the present invention.
10 is a plan view showing a part of the curve section of FIG.
11 is a plan view showing an example of a waveguide structure according to some embodiments of the present invention.
11 is a plan view showing an example of a waveguide structure according to another embodiment of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention, and how to accomplish them, will become apparent by reference to the embodiments described in detail below with reference to the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the invention to those skilled in the art. Is provided to fully convey the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims. Like reference numerals refer to like elements throughout the specification.

In the present specification, when a material film such as a conductive film, a semiconductor film, or an insulating film is referred to as being on another material film or substrate, any material film may be formed directly on the other material film or substrate, Which means that another material film may be interposed between them. Also, while the terms first, second, third, etc. have been used in the various embodiments herein to describe a material film or process step, it should be understood that it is merely intended to refer to a particular material film or process step, , And should not be limited by such terms.

The terminology used herein is for the purpose of illustrating embodiments and is not intended to be limiting of the present invention. In the present specification, the singular form includes plural forms unless otherwise specified in the specification. As used herein, the terms 'comprises' and / or 'comprising' mean that the stated element, step, operation and / or element does not imply the presence of one or more other elements, steps, operations and / Or additions.

In addition, the embodiments described herein will be described with reference to cross-sectional views and / or plan views, which are ideal illustrations of the present invention. In the drawings, the thicknesses of the films and regions are exaggerated for an effective description of the technical content. Thus, the shape of the illustrations may be modified by manufacturing techniques and / or tolerances. Accordingly, the embodiments of the present invention are not limited to the specific forms shown, but also include changes in the shapes that are generated according to the manufacturing process.

FIG. 1 is a plan view illustrating an exemplary array-waveguide grating of a photonic device according to some embodiments of the present invention, and FIG. 2 is a perspective view exemplarily showing a portion of the array-waveguide grating of FIG.

1 and 2, an array-waveguide grating 1000 includes an input star coupler 101 disposed between an input waveguide 101 and output waveguides 105 102, an arrayed waveguide structure, and an output star coupler 104. The arrayed waveguide structure includes arrayed waveguides 103 that have different lengths and that optically connect the input and output star couplers 102 and 104.

The input star coupler 102 distributes the optical signal input from the input waveguide 101 to each of the arrayed waveguides 103 of the arrayed waveguide structure. At this time, since the arrayed waveguide structure functions as a diffraction grating due to the difference in length of the arrayed waveguides 103, the optical signals output from the arrayed waveguides 103 are different from each other Lt; / RTI > Since the output waveguides 105 are connected to the output star coupler 104 at positions where the optical signals are focused, the optical signals are separated into different output waveguides 105 according to their wavelengths (Demultiplexing). Alternatively, when signal lights of various wavelengths are incident on the output waveguide 105, multiplexed signal light is output from the input waveguide 101. That is, the array-waveguide grating 1000 may be used for wavelength multiplexing and demultiplexing.

3 is an enlarged perspective view of a portion of Fig.

2 and 3, a lower clad 201, a core layer 202, a beam limiting pattern 203, and an upper clad 204 are sequentially stacked on a substrate 200. The core layer 202 is patterned to form the input waveguide 101, the input star coupler 102, the arrayed waveguides 103, the output star coupler 104, And the output waveguides 105 may be formed.

According to some embodiments, the substrate 200 may be a silicon substrate, and the core layer 202 may be silicon, silicon nitride, or InP, and the lower and upper clads 201, May be one of materials having a lower index of refraction than the index of refraction 202. For example, the lower and upper clads 201 and 204 may be silicon oxide films.

According to some embodiments, the beam defining pattern 203 may be formed of a material that is smaller than the core layer 202 and has a smaller index of refraction than the upper clad 204. For example, when the core layer 202 is formed of silicon and the upper clad 204 is formed of a silicon oxide film, the beam defining pattern 203 may be formed of a silicon nitride film or a silicon oxynitride film.

However, it is apparent that those skilled in the art can implement the technical idea of the present invention based on materials not exemplified herein. That is, the technical idea of the present invention is not limited to the exemplified materials, but may be implemented based on various materials known in the art, under conditions that satisfy the refractive index relationship of the materials mentioned above.

4 is a simulation image provided to explain one aspect of the waveguide structure of the photonics device according to some embodiments of the present invention.

The beam mode shown in Fig. 4 was obtained from a structure including a silicon nitride film waveguide formed on a silicon film. It is assumed that the thickness of the silicon film is 220 nm, the thickness of the silicon nitride film waveguide is 200 nm, and the width of the silicon nitride film waveguide is 2 um. Although the silicon film is provided in the form of a flat plate without an etched area, an effective beam mode is formed by the presence of the silicon nitride film waveguide. More specifically, the width of the beam mode (i.e., the length in the x direction) is determined by the width of the silicon nitride film waveguide, and the thickness of the beam mode (i.e., the length in the y direction) is determined by the thickness of the silicon film. That is, the presence of the silicon nitride film waveguide provides a function to limit the width of the beam mode, but most of the beam mode is distributed in the silicon film. Accordingly, the beam mode is distributed vertically away from the side wall of the silicon nitride film waveguide.

5 is a view provided to explain one aspect of a waveguide structure of a photonics device according to some embodiments of the present invention.

The core layer 202 may include a lip waveguide (RWG) as shown in FIGS. According to some embodiments of the present invention, as shown in FIG. 5, the beam defining pattern 203 may be formed to have a smaller width than the lip waveguide RWG. This line width difference between the beam limiting pattern 203 and the lips waveguide RWG makes it possible to reduce the phase error according to the non-uniform profile of the side wall RS of the lips waveguide RWG.

More specifically, as described above, the beam defining pattern 203 may be formed of a material having a refractive index smaller than that of the core layer 202 and smaller than that of the upper clad 204. In this case, the beam mode BM is formed to be substantially spaced apart from the side wall s2 of the lips waveguide RWG, as illustrated in Fig. 5 and as will be described in more detail with reference to Figs. 6 and 7 . Therefore, the phase error according to the non-uniform profile of the side wall RS of the lip waveguide RWG can be reduced.

On the other hand, due to the presence of the beam limiting pattern 203, the beam mode BM can be partially overlapped with the upper surface s1 of the lid waveguide RWG. However, since the flatness of the upper surface s1 of the lip waveguide RWG is much smaller than that of the sidewall s2 of the lip waveguide RWG, the flatness of the upper surface s1 of the lip waveguide RWG, It may not cause a problem of phase error.

4, since most of the beam mode is distributed vertically away from the side wall s3 of the beam limiting pattern 203, the width of the side wall s3 of the beam limiting pattern 203 The uniformity does not affect the phase error. 5, even when the beam mode BM is partially overlapped with the side wall s3 of the beam defining pattern 203, as described above, the beam limiting pattern 203 and the upper Since the refractive index difference between the cladding 204 is smaller than that between the beam limiting pattern 203 and the core layer 202, the problem of phase error can be reduced.

FIGS. 6 and 7 are simulation images showing the difference in the beam mode according to the presence and absence of the beam limiting pattern 203. FIG. More specifically, the beam modes of FIG. 6 were obtained from structures including silicon nitride patterns provided in the beam defining pattern 203 and silicon oxide layers provided in the upper clad 204, on a silicon waveguide. The silicon waveguide was assumed to have a width of 3 um, a thickness of 220 nm, and a refractive index of 3.48. The silicon nitride pattern was assumed to have a thickness of 220 nm and a refractive index of 2.1, and the width was assumed to be 3 um, 2 um, 1 um and 0.5 um, respectively. The refractive index of the silicon oxide was assumed to be 1.45. Referring to FIG. 6, it can be seen that the narrower the width of the silicon nitride pattern, the more the beam mode can be spaced further from the sidewalls of the silicon waveguide.

The beam modes of FIG. 7 were obtained from structures in which the silicon waveguide was covered by silicon nitride, without the silicon nitride pattern serving as the beam defining pattern 203. In this case, as shown, as the width of the silicon waveguide gradually decreased to 3 um, 2 um, 1 um and 0.5 um, the overlap between the beam mode and the sidewalls of the silicon waveguide was intensified. 6, it can be seen that the presence of the beam limiting pattern 203 makes it possible to substantially separate the beam mode BM from the sidewall s2 of the lid waveguide RWG. .

8 is a perspective view illustrating a portion (e.g., portion 110 of FIG. 2) of an array-waveguide grating in accordance with some embodiments of the present invention. 8, the beam limiting pattern 203 may be formed to have a tapered structure in an area where the input star coupler 102 or the output star coupler 104 is connected. With this tapered structure, the beam mode BM can be input or output to the input star coupler 102 or the output star coupler 104 with reduced coupling loss characteristics.

9 is a perspective view showing another portion (e.g., portion BR in FIG. 1) of an array-waveguide grating in accordance with some embodiments of the present invention. Referring again to FIG. 1, the waveguides of the photonic device may have straight sections and at least one bending section BR disposed between the straight sections. According to some embodiments of the present invention, the beam defining pattern 203 may be formed to have a triangular pattern 203a in the bending section BR of the array-waveguide grating as shown in FIG. 10, the beam defining pattern 203 is formed such that any one of the vertexes of the triangular pattern 203a is adjacent to the outer curved surface OC of the bending section BR, The side connecting the vertexes can be formed adjacent to the inner curved surface IC of the bending section BR. The wave vector of the light traveling in the bending section BR due to the existence of the triangular beam defining pattern 203a may have a direction that changes toward the inner curved surface IC of the bending section BR. Accordingly, the phase error that can be caused by the sidewall non-uniformity of the waveguide at the bending section BR can be reduced.

The beam defining pattern 203 may be formed to have a substantially vertical sidewall. For example, the beam defining pattern 203 may be formed to have a structure in which a rate of change in thickness along its height is substantially zero. In addition, as exemplarily shown in FIGS. 8 and 9, the beam limiting pattern 203 may be formed to expose the upper surface of the lip waveguide RWG. However, according to other embodiments, the beam defining pattern 203 includes a lower pattern covering the upper surface of the lip waveguide RWG and an upper pattern disposed on the lower pattern and having a smaller width than the lower pattern can do.

According to some embodiments of the present invention, the lip waveguide (RWG) may further include a transition period (TSR) between the straight line section and the bending section BR, as shown in FIG. The width of the straight section may be greater than the width of the bending section BR and the width of the transition section TSR may be reduced from the width of the straight section to the width of the bending section have.

According to some embodiments of the present invention, the distance between the beam limiting pattern 203 and the sidewalls of the rib waveguide RWG located below the beam limiting pattern 203 may be different from each other. 11, the beam limiting pattern 203 is spaced from the outer side wall OC of the lip waveguide RW by a distance of D1, and the inner side wall IC Lt; RTI ID = 0.0 > D2 < / RTI > This structure can be applied when the curvature of the outer side wall OC of the lipped waveguide (RWG) is larger than that in the case of Fig. 10 (i.e., in the case of having a gentle curvature). However, the embodiments of the present invention are not limited to the curved waveguide of such a structure. 12, the distance D1 from the outer sidewall OC to the beam limiting pattern 203 is larger than the distance D1 from the inner sidewall (i.e., IC) to the beam defining pattern 203. The distance D2 between the beam limiting pattern 203 and the beam limiting pattern 203 may be substantially the same as the distance D2.

It is not intended to be exhaustive or to limit the invention to the precise form disclosed, and it will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit of the invention. The appended claims should be construed to include other embodiments.

Claims (18)

Lower clad;
A core pattern provided on the lower clad with an etched sidewall;
A beam limiting pattern covering an upper surface of the core pattern; And
And an upper clad covering the core pattern provided with the beam limiting pattern,
Wherein the beam limiting pattern is formed of a material having a refractive index larger than that of the upper clad and smaller than that of the core pattern and having a line width smaller than that of the core pattern. The method according to claim 1,
Wherein the core pattern is formed of silicon,
Wherein the upper clad is formed of silicon oxide,
Wherein the beam limiting pattern is formed of silicon nitride. The method according to claim 1,
Wherein the beam defining pattern is formed to have a structure in which a rate of change in thickness along its height is substantially zero. The method according to claim 1,
Wherein the core pattern has at least one curved section,
And the distance between the side walls of the core pattern and the beam defining pattern is different on the curved section of the core pattern. The method according to claim 1,
The core pattern
A first curved section having a first radius of curvature; And
A second curve section having a second radius of curvature smaller than the first radius of curvature,
Wherein a distance between the beam defining pattern and an inner sidewall of the core pattern is smaller than a distance between the beam defining pattern and an outer sidewall of the core pattern on the first curve section. The method of claim 5,
And in the second curve section, the beam defining pattern is formed to have a varying width along its traveling direction. The method of claim 5,
And on the second curved section, the beam defining pattern includes a plurality of triangular pieces arranged along the core pattern. The method of claim 7,
Each of the triangular pieces having one of its vertexes adjacent to an outer sidewall of the core pattern and the other vertexes adjacent to an inner sidewall of the core pattern. An input star coupler, an output star coupler, arrayed waveguides optically connecting the input and output star couplers, and beam limiting patterns provided on the arrayed waveguides,
At least one of the arrayed waveguides having a straight section and at least one bent section,
Wherein at least one of the beam defining patterns has a first portion located on the straight section and a second portion located on the bent section,
Wherein the first portion is in the form of a line having a line width smaller than that of the arrayed waveguide and the second portion is triangular in width changing along the traveling direction of the core pattern. The method of claim 9,
Further comprising an upper cladding provided on the input and output star couplers, the arrayed waveguides, and the beam defining patterns,
Wherein the beam limiting patterns are formed of a material that is larger than the upper cladding and has a lower refractive index than the arrayed waveguides. The method of claim 10,
Wherein the arrayed waveguides are formed of silicon, the upper clad is formed of silicon oxide, and the beam defining pattern is formed of silicon nitride. The method of claim 9,
Wherein the beam defining pattern exposes a corresponding top surface of the arrayed waveguides located beneath it. The method of claim 9,
Wherein at least one of the arrayed waveguides further comprises a gentle bend section having a curvature between the bend section and the straight section. 14. The method of claim 13,
The beam defining pattern is formed to have a substantially uniform thickness along the traveling direction of the arrayed waveguide on the gentle bending section,
Wherein the beam limiting pattern and the distances between both side walls of the arrayed waveguide located beneath the beam limiting pattern are different from each other. 14. The method of claim 13,
The distance between the beam limiting pattern and the inner sidewall of the arrayed waveguide located beneath the beam limiting pattern is smaller than the distance between the beam limiting pattern and the outer sidewall of the arrayed waveguide located beneath the beam limiting pattern Array - waveguide grating. The method of claim 9,
The second portion is arranged such that one of its vertices is adjacent to the outer sidewall of the arrayed waveguide located below it and the remaining vertexes are arranged adjacent to the inner sidewall of the arrayed waveguide located beneath it - Waveguide grating. The method of claim 9,
Wherein the beam limiting pattern has a decreasing width at the top of the input and output star couplers and away from the arrayed waveguide. The method of claim 9,
The arrayed waveguide further includes a transition section between the straight section and the bent section,
Wherein the width of the straight section is larger than the width of the bending section,
Wherein a width of the transition section decreases from a width of the straight section to a width of the bent section as the straight section is farther from the straight section.
KR1020120147249A 2012-12-17 2012-12-17 Waveguide structure and arrayed-waveguide grating structure including the same KR20140078184A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020096771A1 (en) * 2018-11-07 2020-05-14 Applied Materials, Inc. Depth-modulated slanted gratings using gray-tone lithography and slant etch

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020096771A1 (en) * 2018-11-07 2020-05-14 Applied Materials, Inc. Depth-modulated slanted gratings using gray-tone lithography and slant etch
KR20210069739A (en) * 2018-11-07 2021-06-11 어플라이드 머티어리얼스, 인코포레이티드 Depth Controlled Gradient Gratings Using Graytone Lithography and Gradient Etching
US11372149B2 (en) 2018-11-07 2022-06-28 Applied Materials, Inc. Depth-modulated slanted gratings using gray-tone lithography and slant etch

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