KR20140059913A - Maskless lithographic apparatus and inspecting method of crosstalk using the same - Google Patents

Maskless lithographic apparatus and inspecting method of crosstalk using the same Download PDF

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Publication number
KR20140059913A
KR20140059913A KR1020120126182A KR20120126182A KR20140059913A KR 20140059913 A KR20140059913 A KR 20140059913A KR 1020120126182 A KR1020120126182 A KR 1020120126182A KR 20120126182 A KR20120126182 A KR 20120126182A KR 20140059913 A KR20140059913 A KR 20140059913A
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South Korea
Prior art keywords
exposure
exposure beam
slit
slit hole
interference
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KR1020120126182A
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Korean (ko)
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KR102015844B1 (en
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김기준
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엘지디스플레이 주식회사
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Priority to KR1020120126182A priority Critical patent/KR102015844B1/en
Publication of KR20140059913A publication Critical patent/KR20140059913A/en
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G03F7/704—Scanned exposure beam, e.g. raster-, rotary- and vector scanning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position

Abstract

The present invention relates to a maskless exposure apparatus, and more particularly, to a maskless exposure apparatus capable of detecting a crosstalk and a crosstalk inspection method using the same.
A feature of the present invention is that the apparatus further includes a beam position measuring unit on one side of the maskless exposure equipment to measure the position and size of the exposure beam irradiated onto the substrate after setting up the maskless exposure equipment or before and after the exposure process The photoresist on the substrate can be exposed in a desired pattern shape without a mask, and the position of the exposure beam reflecting the position and angle error of the micromirror can be quickly measured.
This makes it possible to prevent a crosstalk defect of the exposure beam from occurring in the maskless exposure process, and to form a pattern accurately matching the designed circuit pattern.

Description

Maskless lithographic apparatus and inspecting method using crosstalk using the same [

The present invention relates to a maskless exposure apparatus, and more particularly, to a maskless exposure apparatus capable of detecting a crosstalk and a crosstalk inspection method using the same.

In recent years, as the society has become a full-fledged information age, a display field for processing and displaying a large amount of information has rapidly developed, and various flat panel display devices have been developed in response to this.

Specific examples of such flat panel display devices include a liquid crystal display device (LCD), a plasma display panel (PDP), a field emission display (FED) (ELD), organic light emitting diodes (OLED), and the like. These flat panel display devices are excellent in performance of thinning, light weight, and low power consumption, and can be applied to a conventional cathode ray tube ).

Meanwhile, in such a flat panel display manufacturing process, a thin film deposition process for forming a thin film layer of a predetermined material on the substrate surface, a photolithography process for exposing a selected portion of the thin film, An etching process for patterning in a desired shape is repeated several times, and numerous processes such as cleaning and cutting are carried out.

Here, the photolithography process is a process in which a photoresist (hereinafter referred to as PR) is coated on a substrate on which a thin film is deposited, and a mask having a pattern of a desired shape is faced to expose and develop thereby forming a PR pattern having the same shape as the pattern of the mask.

However, such an exposure process is very complicated and complicated, requiring a long manufacturing time and requiring a high manufacturing cost. Particularly, as a display device with a high resolution is recently required, a mask for exposing a high- The manufacturing cost and the management cost also increase, so that the manufacturing cost of the mask type exposure process increases exponentially.

Therefore, recently, in order to solve the problem of the mask method, a maskless exposure process capable of realizing an ultrafine circuit has recently been emphasized without the cost of mask production.

The maskless exposure process has pattern information made of a control signal using a DMD (Digital Micro-mirror Device), in which a plurality of micromirrors of the DMD transmit a beam incident at a predetermined angle at a desired angle, So that the pattern is exposed through a method of transferring only the necessary beam to the substrate.

In the maskless exposure apparatus using the DMD, the exposure beam is modulated by on / off control of each of the micro mirrors of the DMD based on the control signal generated according to the image data or the like, and the modulated exposure beam is projected onto the exposure surface When a high-precision fine circuit pattern is exposed on a substrate, the designed circuit pattern may not be precisely coincident with the angle error of the reflecting surface of the micromirror.

That is, the exposure beam projected by each micromirror should be irradiated onto the substrate at a certain position based on the control signal, but the position error of the exposure beam is caused by the position and angle error of the micromirror, If an unexposed beam is adjacent

A phenomenon of invading into the position of the beam spot occurs.

This is defined as a crosstalk defect of the exposure beam.

Due to the change in the intensity distribution of the incident beam individual beam spot caused by this phenomenon, an interference fringe, which is a shape of light and darkness, is generated. This phenomenon induces a so-called ghost image in which an image is finally formed at an undesired position .

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and it is an object of the present invention to provide a method and apparatus for exposing a photoresist on a substrate to a desired pattern shape without a mask and to quickly measure the position of an exposure beam, 1 Purpose.

A second object of the present invention is to prevent a crosstalk defect of an exposure beam from occurring in a maskless exposure process. It is a third object of the present invention to form a pattern accurately matching a designed circuit pattern.

In order to achieve the above-mentioned object, the present invention provides a substrate processing apparatus comprising: a stage on which a substrate is placed; An exposure head unit disposed on the stage and irradiating an exposure beam onto the substrate through a DMD (digital micro-mirror device) including a plurality of micromirrors; A slit mask positioned at one side of the stage and detecting an amount of interference of the exposure beam; and a camera for detecting a light amount signal of the exposure beam detected by the slit mask, wherein the crosstalk caused by the interference of the exposure beam and a beam position measuring unit for calculating a crosstalk and a vector quantity.

At this time, the slit mask has a size corresponding to the exposure effective area of the exposure head part, and is arranged on the slit mask in each group in the form of a group, and has an off slit hole ) And a chromium (Cr) film, and the off-slit hole is located adjacent to the on-slit hole.

The off-slit hole and the on-slit hole are alternately formed in the row and the column direction, and the camera detects the light amount signal through the off-slit hole by the interference of the exposure beam irradiated on the on-slit hole.

Further, the amount of interference of the exposure beam is calculated through the light amount signal, and the position and size of the exposure beam are determined. The vector amount is calculated by measuring the amount of interference of the exposure beam for each position.

Further, the position and angle error of the micro-mirror are calculated through the crosstalk defect and the vector amount, and the size of the off-slit hole and the on-slit hole is larger than the beam spot formed by the exposure beam.

The camera is mounted on a moving part, and the exposure head part includes a light source for providing an exposure beam to the micromirror, and a controller for controlling the exposure beam reflected by the micromirror in the form of a beam spot array, And an exposure optical system for transmitting the exposure light onto the substrate.

The exposure optical system includes a micro lens array 231, a special filter 233, and a projection lens 235.

Further, the present invention provides a method of manufacturing a semiconductor device, comprising: a stage on which a substrate is placed; An exposure head unit disposed on the stage and irradiating an exposure beam onto the substrate through a DMD (digital micro-mirror device) including a plurality of micromirrors; And a beam position measuring unit located at one side of the stage and including a slit mask for detecting the amount of interference of the exposure beam and a camera for detecting a light amount signal of the exposure beam detected by the slit mask, An off slit hole formed by an opening having a thickness of the slit mask and an on slit hole clogged by a chromium (Cr) film are formed in each of the sections, A method of inspecting a crosstalk of a maskless exposure apparatus using a maskless exposure apparatus positioned adjacent to the on-slit hole, the method comprising: irradiating the exposure beam corresponding to the on- ; Detecting a light amount signal of the off-slit hole by interference of an exposure beam irradiated with the on-slit hole using the camera; And calculating an interference amount of the exposure beam through the light amount signal. The maskless exposure apparatus may further include: .

At this time, the position and size of the exposure beam are determined through the amount of interference of the exposure beam, the amount of interference of the exposure beam is measured for each position, and the vector amount of the exposure beam is calculated.

Then, the position and angle error of the micro mirror are calculated through the interference amount of the exposure beam.

As described above, according to the present invention, there is further provided a beam position measuring unit on one side of the maskless exposure equipment, so that after the maskless exposure equipment is set up, or after the exposure process, It is possible to expose the photoresist on the substrate in a desired pattern shape without a mask and to quickly measure the position of the exposure beam reflecting the position and angle error of the micromirror.

This has the effect of preventing the occurrence of a crosstalk defect of the exposure beam in the maskless exposure process, and it is possible to form a pattern precisely matching the designed circuit pattern.

1 is a front view schematically showing a maskless exposure apparatus according to an embodiment of the present invention;
2 is a plan view showing a beam spot array by the maskless exposure equipment of FIG.
FIG. 3A is a perspective view schematically showing a beam position measuring unit according to an embodiment of the present invention. FIG.
FIG. 3B is a plan view schematically showing the slit mask of FIG. 3A; FIG.
4A to 4B are views for explaining the principle of measuring the position of an exposure beam in a beam position measuring unit according to an embodiment of the present invention.

Hereinafter, embodiments according to the present invention will be described in detail with reference to the drawings.

FIG. 1 is a front view schematically showing a maskless exposure apparatus according to an embodiment of the present invention, and FIG. 2 is a plan view showing a beam spot array by the maskless exposure apparatus of FIG.

As shown in the figure, the maskless exposure apparatus 100 according to the embodiment of the present invention mainly includes at least one exposure head unit 200 and a stage 120 for moving a substrate 111 to be processed.

In this case, a pattern forming material, that is, a photoresist, is coated on the substrate 111 to be processed. The substrate 111 is placed on the stage 120 and is reciprocable in the Y-axis direction defined in the drawing Do.

An exposure head unit 200 for exposing a photoresist is disposed on the substrate 111. Each exposure head unit 200 includes a light source 210 for providing an exposure beam L, A digital micro-mirror device (DMD) 220 for modulating the provided exposure beam L according to the exposure pattern, a modulated exposure beam L transmitted from the DMD 220 to a beam spot and an exposure optical system 230 for transferring the light onto the substrate 111 in the form of an array 240.

The light source 210 may be a semiconductor laser, an ultraviolet lamp, or the like.

The DMD 220 includes a memory cell such as an SRAM cell and a plurality of micromirrors arranged in a matrix type on the memory cell. For example, the micromirror may be arranged in 1024 x 768, A material having a high reflectance such as aluminum is deposited on the surface of the micromirror.

Here, it is preferable that the reflectance of the micromirror is about 90% or more, and the arrangement interval is preferably substantially the same in the longitudinal direction and the transverse direction. For example, the spacing between the arrays may be about 13.7 占 퐉. Such a micromirror is disposed on the memory cell by a support such as a hinge.

When a digital signal is applied to the memory cell, the DMD 220 is tilted in a range of +/- alpha degrees (e.g., +/- 12 degrees) with respect to the surface of the memory cell. Therefore, the inclination of the micromirror constituting the DMD 220 is controlled according to the information of the exposure pattern, so that the exposure beam L incident on the DMD 220 is reflected in a specific direction according to the inclination of each micromirror do.

The on / off state of each micromirror constituting the DMD 220 can be controlled by an external control unit (not shown).

For example, when the micromirror is inclined at + alpha, the exposure beam L is reflected by the micromirror and is directed to the exposure optical system 230, and this state is referred to as an on state. Conversely, when the micromirror is inclined at -α, the exposure beam L is reflected by the micromirror and is directed to a light absorber (not shown), and this state is referred to as an off state.

The exposure beam L reflected from the DMD 220 is transmitted to the exposure optical system 230 and irradiated onto the substrate 111 in the form of a beam spot array 240. The exposure optical system 230 irradiates the exposure beam L, A micro lens array 231, a special filter 233, and a projection lens 235 along the passing path of the light beam.

The microlens array 231 is formed by arranging a plurality of microlenses corresponding to the micromirrors of the DMD 220 two-dimensionally. In the case where the DMD 220 is formed of 1024 x 768 micromirrors, Also, 1024 x 768 micro lenses are arranged.

The array interval of these microlenses corresponds to the array interval of the micromirrors of the DMD 220 as well.

The microlens array 231 separates the exposure beam L reflected from the DMD 220 into a plurality of beams and condenses the beams.

The special filter 233 also has a plurality of pinholes arranged two-dimensionally on the focal plane of the microlens corresponding to the microlenses of the microlens array 231. The pinholes are arranged in the order of the beam spot 241 focused through the microlenses And it plays a role of shaping the size to a certain size or blocking the noise generated in the optical system.

The projection lens 235 adjusts the resolution of the exposure beams L condensed by the microlens array 231 and transmits the adjusted resolution. For example, a plurality of beam spots 241 formed on the focal plane of the microlens array 231 are imaged on the substrate 111, for example, approximately one time.

Here, the exposure head unit 200 including the DMD 220 and the microlens array 231 is inclined at a predetermined alignment angle with respect to the scan direction of the substrate 111, that is, the Y axis direction defined by the drawing .

That is, when the arrangement direction Y 'of the beam spot arrays 240 depending on the arrangement angle of the exposure head unit 200 is inclined at a predetermined alignment angle? With respect to the scanning direction (Y-axis direction) The resolution of the maskless exposure apparatus 100 can be increased.

At this time, the exposure beam L focused on the focal plane of the microlens array 231 has a circular or elliptic shape.

Such an exposure beam L is formed on a substrate 111 via a special filter 233 and a projection lens 235 is referred to as a beam spot array 240 as shown in FIG. The beam spot array 240 is made up of a plurality of beam spots 241 arranged in a matrix form.

That is, the DMD 220 forms a beam spot array 240 composed of a plurality of beam spots 241 on the substrate 111. The beam spot 241 of the beam spot array 240 corresponds to the micromirror of the DMD 220 and the microlens of the microlens array 231. [ Thus, the DMD 220, the microlens array 231 and the beam spot array 240 all have substantially the same alignment direction Y '.

In the embodiment of the present invention, when the DMD 220 is formed of a micromirror of M columns × N rows, the beam spot array 240 is also formed of M rows × N rows of microlenses. At this time, the beam spots 241 may be spaced apart from each other by the same distance D in the horizontal and vertical directions.

For example, the spacing of the beam spots 241 may be about 55 microns, and the beam spot 241 may have a circular formation with a Gaussian distribution with a full width at half maximum (FWHM) of about 2.5 microns.

The stage 120 or the exposure head unit 200 is rotated so that the array direction Y 'of the beam spot arrays 240 forms a predetermined alignment angle? With respect to the scanning direction Y of the substrate 111 A scan line 243 is formed along an area where the beam spot 241 is imaged on the substrate 111 while the substrate 111 moves along the scan direction Y. [

Therefore, if the scan direction Y and the alignment direction Y 'are arranged at a predetermined alignment angle?, The distance D between the beam spots 241 is maintained, but the distance between neighboring scan lines 243 (A) is reduced. Accordingly, the resolution of the maskless exposure apparatus 100 is increased.

Here, in the embodiment of the present invention, the DMD 220 and the microlens array 231 are arranged at 1024 × 768 and the magnification of the projection lens 235 is 1, but the present invention is not limited to this, The arrangement of the microlens array 231 and the magnification of the projection lens 235 can be adjusted by changing the size of the desired beam spot 241, the minimum feature size of the pattern to be exposed, An optimum magnification combination can be derived according to the number of the exposure head units 200 to be used.

Although the stage 120 on which the substrate 111 is placed moves with respect to the exposure head 200 in the embodiment of the present invention, the stage 120 is not limited to this, 200 may move. Further, both the stage 120 and the exposure head section 200 may move.

Although the present invention is not limited to this example, a plurality of exposure head units 200 may be disposed on the substrate 111 in the scanning direction Y (Y) of the stage 120, So that the processing time can be shortened.

The maskless exposure apparatus 100 emits an exposure beam L from the light source 210 of the exposure head unit 200 and exposes the exposure beam L emitted from the light source 210 in the DMD 220 And reflects it with an exposure beam L having at least two successive overlapping patterns.

The special filter 233 and the projection lens 235 separate the exposure beam L reflected by the DMD 220 into a plurality of exposure beams L from the microlens array 231, The photoresist on the substrate 111 can be exposed in a desired form by adjusting the resolution of the condensed exposure beams L in the exposure unit 231 and transmitting the resolution.

Particularly, in the embodiment of the present invention, the maskless exposure apparatus 100 includes a beam position measuring unit 300 for measuring the position of the exposure beam L irradiated onto the substrate 111 in the exposure head unit 200 And is installed on one side of the stage 120. [

That is, the maskless exposure apparatus 100 according to the present invention irradiates the substrate 111 through the beam position measuring unit 300 after the maskless exposure apparatus 100 is set up or before or after the exposure process. And a monitoring and calculation system which inspects the position and size of the exposure beam L and the like from time to time.

In this case, when the exposure beam L is irradiated onto the substrate 111 through the acquired data to be reflected when the pattern is formed, defective crosstalk of the exposure beam L does not occur, The desired pattern can be formed on the substrate.

The beam position measuring unit 300 includes a slit mask 310 fixed to the stage 120 or separated from the stage 120 and a detection slit hole 330 formed in the slit mask 310 And a camera 320 for detecting a light amount signal of the exposure beam L projected from the DMD 220 of the exposure apparatus 200.

This will be described in more detail with reference to FIGS. 3A to 3B.

FIG. 3A is a perspective view schematically showing a beam position measuring unit according to an embodiment of the present invention, and FIG. 3B is a plan view schematically showing the slit mask of FIG. 3A.

As shown in the figure, the beam position measuring unit 300 is located below the exposure head unit 200, and the beam position measuring unit 300 measures the position of the exposure beam 1 of L) and a control unit.

The slit mask 310 is fixed to one side of the stage (120 in Fig. 1) of the maskless exposure equipment (100 in Fig. 1) or is installed separately and is provided to correspond to the effective exposure area of one exposure head unit 200 Size.

Here, the slit mask 310 has a thin chromium (Cr) film 311 for light shielding formed on a quartz glass plate. A plurality of detection slit holes 330 are formed at predetermined positions of the chromium film 311 have.

At this time, the detection slit holes 330 formed in the slit mask 310 are arranged in the form of a group for each zone C, and the structure of the detection slit holes 330 arranged for each zone C is the same as that of the substrate 1) of the beam spot (241 in Fig. 2).

The slit hole 330 for detecting part of the detection slit hole 330 arranged for each zone C is formed by a circular opening having a thickness of the slit mask 310 And the rest of the slit holes 330 for detection are blocked by the chrome film 311.

That is, a plurality of detecting slit holes 330 arranged for each zone C are divided into an off slit hole 331 composed of an opening portion and an on slit hole 333 blocked by the chromium film 311 The off-slit hole 331 and the on-slit hole 333 are positioned corresponding to the micromirrors of the DMD (220 in FIG. 1), respectively.

The off-slit hole 331 is located adjacent to the on-slit hole 333. That is, only a plurality of on-slot holes 333 are formed around the one off-slit hole 331.

It is preferable that the detection slit hole 330 is formed to be larger than the size of the beam spot 241 formed by the exposure beam (L in FIG. 1) irradiated to the substrate (111 in FIG. 1) during the exposure process. That is, when the radius of the beam spot 241 has an r value and the slit hole 330 for detection has a diameter D value, the D value of the detection slit hole 330 is formed to be larger than twice the r value .

This makes it possible to improve the discrimination power of the beam spot 241 formed by the detection slit hole 330 and the exposure beam (L in FIG. 1) to more accurately grasp the positional error of the exposure beam (L in FIG. 1) . Also, the directional position of the exposure beam (L in Fig. 1) can be grasped easily.

The camera 320 located under the slit mask 310 may be fixed to the stage 120 or may be installed separately and may be mounted on the slit mask 310 through the moving part 330 of FIG. As shown in FIG.

The camera 320 picks up an exposure beam (L in Fig. 1) that has passed through the slit hole 330 for detection of the slit mask 310 and detects the light amount signal. The detected light amount signal is sent to a control unit And the amount of interference by the exposure beam (L in Fig. 1) is calculated by a control unit (not shown).

It is also possible to observe the image by changing the intensity or polarization direction of the signal detected through the camera 320. [

In other words, the position error of the exposure beam (L in FIG. 1) is generated by the angular error of the micromirror of the DMD (220 in FIG. 1) in the maskless exposure equipment (100 in FIG. 1) (L in Fig. 1) are interfered with each other to be irradiated.

Accordingly, the maskless exposure equipment 100 of FIG. 1 of the present invention can be configured to irradiate an exposure beam (also shown in FIG. 1) irradiated onto the substrate (111 in FIG. 1) through the beam position measuring unit 300 before or after the exposure process (L in FIG. 1) is irradiated onto the substrate (L in FIG. 1) to be reflected when the pattern is formed.

Thus, a desired pattern can be formed on the substrate (111 in FIG. 1) without causing a crosstalk defect of the exposure beam (L in FIG. 1).

Hereinafter, the principle of measuring the position of the exposure beam L in the beam position measuring unit according to the embodiment of the present invention will be described in detail with reference to FIGS. 4A to 4B.

4A to 4B are views for explaining the principle of measuring the position of an exposure beam in the beam position measuring unit according to the embodiment of the present invention.

Here, the circle represents a detection slit hole 330 formed on the slit mask 310 (see FIG. 3A), and the detection slit hole 330 is divided into the off-slit hole 331 and the on-slit hole 333. The black dot represents the amount of interference by the exposure beam (L in Fig. 1) irradiated to the on-slot hole 333. [

As shown in the figure, a plurality of zones C are defined on the slit mask 310 (FIG. 3A), and a plurality of detection slit holes 330 are spaced apart from each other by a predetermined distance.

At this time, the off-slit hole 331 made of the opening is located adjacent to the on-slit hole 333 blocked by the chrome 311, and the off-slit hole 331 is formed in the on- Are alternately formed.

That is, the off-slit hole 331 and the on-slit hole 333 are alternately formed in the first column and the first row, and only the on-slit hole 333 is formed in the second column and the second row.

Therefore, at least three on-slit holes 333 are located in the periphery of the off-slit hole 331.

The exposure beam (L in FIG. 1) is irradiated from the exposure head portion (200 in FIG. 3A) onto the slit mask (310 in FIG. 3A) L of FIG. 3A) causes only the exposure beam (L in FIG. 1) corresponding to the on-slit hole 333 of the slit mask (310 in FIG. 3A) to be irradiated onto the slit mask (310 in FIG. 3A).

Therefore, when the position and angle error of the micromirror of the exposure head portion (200 in FIG. 3A) are not generated, all the exposure beams (L in FIG. 1) irradiated with the slit mask The light amount signal by the exposure beam (L in FIG. 1) is not detected by the camera (320 in FIG. 3A) located under the slit mask (310 in FIG. 3A) blocked by the chromium film 311 do.

However, when the position and angle error of the micromirror occurs, the camera (320 in FIG. 3A) positioned below the slit mask (310 in FIG. 3A) through the off-slit hole 331 as shown in FIG. The light amount signal according to L in Fig. 1 is detected.

As a result, it can be confirmed that the position and angle error of the micromirror has occurred.

In particular, the degree of crosstalk and the degree of deviation of the exposure beam (L in FIG. 1), that is, the vector amount, are calculated through the light amount signal of the exposure beam (L in FIG. 1) detected by the camera .

That is, the light amount signal detected through the off-slit hole 331 corresponds to the amount of interference (1S, 2S, 2S) of the exposure beam (L in FIG. 1) irradiated to the on-slit hole 333 located in the periphery of the off- 3S), it is possible to calculate the crosstalk defect and the vector quantity through the light quantity signal.

Referring to FIG. 4B, the first through third on-slit holes 333a, 333b, and 333c of the slit mask 310 (see FIG. 3A) (L in FIG. 1) is irradiated to the first off-slit holes 333a, 333b, and 333c by the position and angle error of the micromirror that irradiates the exposure beam (L in FIG. 1) 331 cause interference of the exposure beams (L in FIG. 1) irradiated with the first through third ON slit holes 333a, 333b, 333c, and the light amount signal of the exposure beam (L in FIG. 1) is detected .

3A) of the slit mask 310 (see FIG. 3A) passes through the slit hole 330 for detection of the slit mask 310 (FIG. 3A) in accordance with the light amount signal detected through the first off- And the detected light amount signal is transmitted to a control unit (not shown) to calculate an interference amount by the exposure beam (L in Fig. 1) detected by a control unit (not shown) , Thereby determining whether the position and size of the exposure beam (L in FIG. 1) is defective or not.

Thus, it is possible to confirm whether or not a crosstalk defect has occurred from the first to third on-slot holes 333a, 333b, and 333c.

In addition, the degree of interference of the exposure beam (L in FIG. 1) with the first off-slit hole 331, that is, the amount of crosstalk light is measured for each position, It is possible to calculate the exposure beam (L in Fig. 1) in which the torque failure has occurred and calculate the vector amount of the exposure beam (L in Fig. 1).

That is, the beam position measuring unit 300 measures the data when the crosstalk defect occurs in all of the first to third ON slit holes 333a, 333b, and 333c and the data when the first to third ON slit holes 333a, 333b, 333c and the crosstalk light amount of the first off-slit hole 331 are compared with each other so that the first through third on-slits 331, It is possible to calculate how many of the exposure beams (L in FIG. 1) among the holes 333a, 333b, and 333c have caused a crosstalk defect.

At this time, by measuring the amount of crosstalk light of the first off-slit hole 331 by position, an exposure beam (L in Fig. 1) in which a crosstalk defect occurred in the first through third ON slit holes 333a, 333b, Can be calculated.

Further, by calculating the vector amount of the exposure beam (L in Fig. 1) by measuring the crosstalk light amount of the first off-slit hole 331 for each position, it corresponds to the first to third on-slot holes 333a, 333b, and 333c The position and angle error of each micromirror of each DMD (220 in FIG. 1) can also be calculated.

As described above, the maskless exposure equipment (100 in FIG. 1) according to the embodiment of the present invention further includes a beam position measurement unit (300 in FIG. 3A) on one side of the stage (120 in FIG. 1) After the setup of the exposure equipment (100 in Fig. 1), or before and after the exposure process, the exposure beam (Fig. 1 (1)) irradiated onto the substrate (111 in Fig. 1) (L in Fig. 1) is irradiated onto the substrate (111 in Fig. 1) through the acquired data at this time to be reflected when the pattern is formed, A desired pattern can be formed on the substrate (111 in FIG. 1) without causing a defect in crosstalk of the beam (L in FIG. 1).

The present invention is not limited to the above-described embodiments, and various modifications may be made without departing from the spirit of the present invention.

200: Exposure head part
300: beam position measuring unit
310: slit mask, 311: chrome film
320: camera, 330: detection slit hole
C: Zone

Claims (16)

A stage on which the substrate is placed;
An exposure head unit disposed on the stage and irradiating an exposure beam onto the substrate through a DMD (digital micro-mirror device) including a plurality of micromirrors;
A slit mask positioned at one side of the stage and detecting an amount of interference of the exposure beam; and a camera for detecting a light amount signal of the exposure beam detected by the slit mask, wherein the crosstalk caused by the interference of the exposure beam a beam position measuring unit for calculating a crosstalk and a vector quantity,
A maskless exposure apparatus.
The method according to claim 1,
Wherein the slit mask has a size corresponding to an exposure effective area of the exposure head portion.
The method according to claim 1,
On the slit mask, an off slit hole formed by an opening having a thickness of the slit mask and an on slit hole clogged by a chromium (Cr) film are formed in each group in the form of a group And the off-slit hole is located adjacent to the on-slit hole.
The method of claim 3,
Wherein the off-slit hole and the on-slit hole are alternately formed in a row and a column direction.
The method of claim 3,
Wherein the camera detects a light amount signal through the off-slit hole by interference of the exposure beam irradiated on the on-slit hole.
6. The method of claim 5,
A maskless exposure apparatus for calculating an interference amount of the exposure beam through the light amount signal and determining a position and a size of the exposure beam.
6. The method of claim 5,
Wherein the vector quantity is calculated by measuring the interference amount of the exposure beam for each position.
The method according to claim 1,
And calculating a position and an angle error of the micromirror through the crosstalk and the vector quantity.
The method of claim 3,
Wherein the size of the off-slit hole and the on-slit hole is larger than the beam spot formed by the exposure beam.
The method according to claim 1,
The camera is mounted on a moving part.
The method according to claim 1,
Wherein the exposure head portion includes a light source for providing an exposure beam to the micromirror, and an exposure optical system for transmitting the exposure beam reflected by the micromirror in the form of a beam spot array onto the substrate. (maskless) exposure equipment.
12. The method of claim 11,
Wherein the exposure optical system includes a micro lens array, a special filter, and a projection lens.
A stage on which the substrate is placed; An exposure head unit disposed on the stage and irradiating an exposure beam onto the substrate through a DMD (digital micro-mirror device) including a plurality of micromirrors; And a beam position measuring unit located at one side of the stage and including a slit mask for detecting the amount of interference of the exposure beam and a camera for detecting a light amount signal of the exposure beam detected by the slit mask, An off slit hole formed by an opening having a thickness of the slit mask and an on slit hole clogged by a chromium (Cr) film are formed in each of the sections, A method of inspecting a crosstalk of a maskless exposure apparatus using a maskless exposure apparatus located adjacent to the on-slit hole,
Irradiating the exposure beam corresponding to the on-slit holes;
Detecting a light amount signal of the off-slit hole by interference of an exposure beam irradiated with the on-slit hole using the camera;
Calculating an interference amount of the exposure beam through the light amount signal
A method for inspecting a crosstalk of a maskless exposure equipment,
14. The method of claim 13,
Wherein the position and size of the exposure beam are determined through the amount of interference of the exposure beam.
14. The method of claim 13,
And measuring an interference amount of the exposure beam for each position to calculate a vector amount of the exposure beam.
14. The method of claim 13,
And calculating a position and an angle error of the micromirror through the interference amount of the exposure beam.
KR1020120126182A 2012-11-08 2012-11-08 Maskless lithographic apparatus and inspecting method of crosstalk using the same KR102015844B1 (en)

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