KR20140059567A - Semiconductor etching apparatus - Google Patents

Semiconductor etching apparatus Download PDF

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Publication number
KR20140059567A
KR20140059567A KR1020120126147A KR20120126147A KR20140059567A KR 20140059567 A KR20140059567 A KR 20140059567A KR 1020120126147 A KR1020120126147 A KR 1020120126147A KR 20120126147 A KR20120126147 A KR 20120126147A KR 20140059567 A KR20140059567 A KR 20140059567A
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KR
South Korea
Prior art keywords
ring
chuck table
clamp ring
wafer
focus ring
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KR1020120126147A
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Korean (ko)
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KR102031666B1 (en
Inventor
손수형
이정훈
김경진
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엘지이노텍 주식회사
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Priority to KR1020120126147A priority Critical patent/KR102031666B1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

A semiconductor etching apparatus according to an embodiment of the present invention includes a process chamber in which a reaction gas is supplied and a reaction region is defined, an upper electrode disposed inside the process chamber and spaced apart from an upper electrode and a lower electrode to which a predetermined power is applied, A chuck table provided on the upper side of the lower electrode for placing the wafer w thereon, a coolant supply line passing through the lower electrode and the chuck table and communicating with the coolant, a periphery of the edge of the chuck table, A ring assembly surrounding the edge of the chuck table and surrounding a side of the wafer w; a focus ring disposed on the focus ring, a clamp ring covering a part of the clamp ring and a distance adjusting means for varying a distance between the clamp ring and the focus ring.

Description

Technical Field [0001] The present invention relates to a semiconductor etching apparatus,

An embodiment relates to a semiconductor etching apparatus.

Light Emitting Diode (LED) is a device that converts electrical signals into light by using the characteristics of compound semiconductors. It is widely used in household appliances, remote control, electric signboard, display, and various automation devices. There is a trend.

When a forward voltage is applied to the light emitting device, electrons in the n-layer and holes in the p-layer are coupled to emit energy corresponding to the energy gap between the conduction band and the valance band. It is mainly emitted in the form of heat or light, and when emitted in the form of light, it becomes an LED.

Nitride semiconductors have attracted great interest in the development of optical devices and high output electronic devices due to their high thermal stability and wide band gap energy. Particularly, blue light emitting devices, green light emitting devices, ultraviolet (UV) light emitting devices, and the like using nitride semiconductors have been commercialized and widely used.

The light emitting device package is manufactured by manufacturing a light emitting device on a substrate, separating the light emitting device chip through dieseparation, which is a sawing process, and then diebonding the light emitting device chip to a package body. Wire bonding and molding can be performed, and the test can proceed.

As the fabrication process of the light emitting device chip and the packaging process are performed separately, various complex processes and various substrates may be required.

The light emitting device package has a structure in which a light emitting element and a lead frame are disposed in a body, and a lens type structure in which a light emitting element is disposed on a lead frame and a lens structure is formed on a lead frame.

Generally, a light emitting device is fabricated through an etching and cutting process in a wafer. A wafer is formed with a semiconductor structure on a substrate, which requires various etching depending on the use of the semiconductor.

In addition, the substrate in the wafer is formed of sapphire or the like, and the semiconductor structure is a semiconductor having a composition formula of In x Al y Ga 1-xy N (0 = x = 1, 0 = y = 1, 0 = x + Materials such as GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, and the like. Since the compositions of the wafers are different, there is a difference in the cooling method at the time of etching and the ambient atmosphere. Therefore, in order to etch the wafer, it is inconvenient to etch the semiconductor structure, to replace the equipment in the chamber, to adjust the fixing position of the wafer or the fixing pressure, and to perform the etching process again.

The embodiment provides a semiconductor etching apparatus capable of proceeding a plurality of processes without performing a separate chamber operation.

A semiconductor etching apparatus according to an embodiment of the present invention includes a process chamber in which a reaction gas is supplied and a reaction region is defined, an upper electrode disposed inside the process chamber and spaced apart from an upper electrode and a lower electrode to which a predetermined power is applied, A chuck table provided on the upper side of the lower electrode for placing the wafer thereon, a coolant supply line passing through the lower electrode and the chuck table and communicating with the coolant, a periphery of the edge of the chuck table, Wherein the ring assembly includes a focus ring surrounding an edge of the chuck table and surrounding a side of the wafer, a clamp ring disposed on the focus ring and covering a portion of the wafer, And distance adjusting means for varying the distance between the ring and the focus ring.

Conventionally, in order to perform the etching process of the semiconductor structure and the substrate, a process of opening and assembling the chamber is required, which is complicated. However, according to the embodiment, there is an advantage that the process can be simplified and the process time can be shortened.

Further, according to the embodiment, it is possible to improve the yield reduction due to the inflow of foreign matter that may occur when the chamber is opened and closed.

Further, there is an advantage of preventing the outflow of the refrigerant gas at the time of etching the substrate.

Further, since the clamp ring can appropriately hold the pressure at which the wafer is pressed, there is an advantage of preventing breakage of the semiconductor structure by the clamp ring.

1 is a cross-sectional view showing a cross section of a semiconductor etching apparatus according to an embodiment,
FIG. 2 is a sectional view showing a cross section of a semiconductor etching apparatus according to another embodiment,
3 is a sectional view showing a cross section of a semiconductor etching apparatus according to still another embodiment,
4 is a sectional view showing a cross section of a semiconductor etching apparatus according to still another embodiment,
5 is a structural view showing a cross section of the chuck table according to the embodiment.

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention and the manner of achieving them will become apparent with reference to the embodiments described in detail below with reference to the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. To fully disclose the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims. Like reference numerals refer to like elements throughout the specification.

The terms spatially relative, "below", "beneath", "lower", "above", "upper" May be used to readily describe a device or a relationship of components to other devices or components. Spatially relative terms should be understood to include, in addition to the orientation shown in the drawings, terms that include different orientations of the device during use or operation. For example, when inverting an element shown in the figures, an element described as "below" or "beneath" of another element may be placed "above" another element. Thus, the exemplary term "below" can include both downward and upward directions. The elements can also be oriented in different directions, so that spatially relative terms can be interpreted according to orientation.

The terminology used herein is for the purpose of illustrating embodiments and is not intended to be limiting of the present invention. In the present specification, the singular form includes plural forms unless otherwise specified in the specification. It is noted that the terms "comprises" and / or "comprising" used in the specification are intended to be inclusive in a manner similar to the components, steps, operations, and / Or additions.

Unless defined otherwise, all terms (including technical and scientific terms) used herein may be used in a sense commonly understood by one of ordinary skill in the art to which this invention belongs. Also, commonly used predefined terms are not ideally or excessively interpreted unless explicitly defined otherwise.

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. Also, the size and area of each component do not entirely reflect actual size or area.

Further, the angle and direction mentioned in the description of the structure of the light emitting device in the embodiment are based on those shown in the drawings. In the description of the structure of the light emitting device in the specification, reference points and positional relationship with respect to angles are not explicitly referred to, refer to the related drawings.

Hereinafter, embodiments will be described in detail with reference to the drawings.

1 is a cross-sectional view showing a section of a semiconductor etching apparatus according to an embodiment.

Referring to FIG. 1, a semiconductor etching apparatus according to an embodiment of the present invention includes a process chamber 100 to which a reaction gas is supplied and a reaction region is defined, an upper electrode 102 A lower electrode 124 disposed apart from the upper electrode 102 to apply a predetermined electric power to the reaction gas to be converted into a plasma state, a chuck table (not shown) disposed above the lower electrode 124, A coolant supply line 150 for supplying coolant to the lower electrode 124 and the chuck table 126, and a ring assembly for surrounding the edges of the chuck table 126 and fixing the crucible.

The etching object may be an object to be visualized by the semiconductor etching apparatus, for example, a wafer w. In the following description, the wafers w are used to describe the crucible.

The process chamber 100 provides a place where the etching process for etching the target wafer or wafers formed on the wafer w into an electrical characteristic pattern is performed. The process chamber 100 has a chamber wall of a certain thickness and is isolated from the outside. The interior of the process chamber 100 is a closed space, forming a reaction zone where plasma reactions occur.

The process chamber 100 may include an upper chamber into which a process gas for etching the upper portion of the wafer w in a predetermined pattern is injected and a lower chamber into which the wafer W is loaded. Of course, the process chamber 100 is not limited to this, and may be a single chamber or a plurality of chambers.

A reaction gas may be supplied into the process chamber 100. There is no limitation on the manner in which the reaction gas is supplied into the process chamber 100. For example, the reaction gas can be supplied through the shower head 104 formed in the upper chamber.

The shower head 104 may be formed of a ceramic material having excellent strength and insulation characteristics as compared with a quartz material or a quartz material. The shower head 104 is provided with a buffer space 106 for temporarily storing gas supplied through a gas supply pipe (not shown), and temporarily stores the gas temporarily stored in the buffer space 106 in the process chamber A plurality of gas injection holes 108 may be formed for injecting the gas into the inside of the chamber 100.

A Dome Temp Control Unit (DTCU) (hereinafter, referred to as " DTCU ") functioning as an auxiliary chamber that is connected to the RF power and supplied with RF energy and maintains the temperature inside the process chamber 100 at an appropriate temperature of about 80 DEG C 110 may be installed.

The upper chamber may be formed with a dome 112 that covers the ceiling of the upper chamber.

The dome 112 is installed inside the dome temperature control unit (DTCU) for RF power and temperature control, and may be formed of an insulating material or a ceramic material such as quartz, alumina or alpha-alumina (sapphire).

1, the dome 112 is provided for the purpose of minimizing the loss of the wafer w by more easily and promptly adsorbing the polymer generated during the plasma etching process. As shown in FIG. 1, .

Above the dome 112, a plurality of lamps 114 for maintaining the inside of the process chamber 100 at a predetermined temperature condition and an RF coil 116 for supplying RF power required for plasma formation may be provided .

The process chamber 100 must maintain the vacuum or vacuum conditions therein. Accordingly, the process chamber 100 may be connected to an exhaust line 118 for discharging internal gas or internal air and a pump 120 for forming a negative pressure. However, it is needless to say that various methods of making the inside of the process chamber 100 vacuum can be used.

The exhaust line 118 communicates with the process chamber 100, and is preferably formed in communication with one side of the upper chamber.

The pump 120 is connected to the exhaust line 118 and forms a negative pressure. Accordingly, the inside of the process chamber 100 is in a vacuum state, and gas, particles, and the like in the process chamber 100 are discharged to the outside.

In order to perform the plasma etching process, the inside of the process chamber 100 is to be formed in a predetermined pressure atmosphere. By the pump 120 provided to generate the vacuum pressure through the exhaust line 118, (About 0.1 mT or less) in a constant vacuum pressure state. The control of the vacuum pressure for the process chamber 100 is performed by the gate valve 122 formed above the pump 120.

The upper electrode 102 is disposed inside the process chamber 100, and a predetermined electric power is applied thereto. The location of the upper electrode 102 is not limited, but may preferably be located in the upper region of the process chamber 100. Here, the predetermined power is preferably RF power. The RF power is a high frequency of about 60 MHz or more. By applying such a high frequency, the reaction gas injected into the process chamber 100 can be plasmaized, and the plasma etching process can be performed even under a low pressure condition of 10 mT or less .

The lower electrode 124 is disposed apart from the upper electrode 102, and a predetermined electric power is applied to convert the reaction gas into a plasma state. The position of the lower electrode 124 is not limited, but is preferably located at a lower region of the process chamber 100 and spaced apart from the upper electrode 102. The power applied to the lower electrode 124 may be RF power. Here, the frequency of the RF power applied to the lower electrodes 124 and 124 is preferably about 2 MHz, and attracts the plasma ions toward the wafer w

A chuck table 126 on which the wafer W is seated is formed on the lower electrode 124.

The chuck table 126 is disposed within the process chamber 100 and provides a place where the wafer w is seated.

The chuck table 126 can be lifted and lowered by the lifting means 140 so as to be able to move relative to the ring assembly. For example, the lower electrode 124 is provided with the elevating means 140 below the chuck table 126, and the chuck table 126 is moved up and down by the elevating means 140. At this time, the ring assembly is in a fixed position. Thus, the wafer w placed on the chuck table 126 is fixed by the ring assembly.

As another example, the position of the chuck table 126 is fixed, and the ring assembly may be reciprocated up and down by the pneumatic cylinder 160 or the like. Thus, the ring assembly can secure the wafer w placed on the chuck table 126, and the ring assembly can be spaced from the wafer w. That is, any one of the ring assembly and the chuck table 126 may be reciprocated.

Preferably, the chuck table 126 may include an electrostatic chuck (ESC). The electrostatic chuck chucks the wafer w using the dielectric polarization phenomenon generated by the potential difference and the electrostatic principle.

Here, the wafer w is an example of a crucible. Therefore, the crucible is not limited to this, and may include other products.

The coolant supply line 150 passes through the lower electrode 124 and the chuck table 126 and is formed in communication with the coolant. There is no limit to the refrigerant, but there is usually no reactivity with other materials, and cheap helium is used. The coolant supplied to the coolant supply line 150 comes into contact with the wafer W to cool the wafer W and cool the chuck table 126 and the lower electrode 124.

The ring assembly fixes the wafer w that is seated on the chuck table 126 and tightly contacts the wafer w with the chuck table 126 to prevent the refrigerant from flowing out.

The ring assembly may have various shapes, but it may have a shape corresponding to the shape of the wafer w, and has a rough ring shape.

The ring assembly may include a focus ring 128, a clamp ring 129, and a distance adjustment means 171.

The focus ring 128 is formed in an annular shape surrounding the edge of the chuck table 126 and surrounding the side (periphery) of the wafer w. The focus ring 128 can be coupled with a lift device for lifting and lowering the focus ring 128. The landing gear can be, for example, a pneumatic cylinder 160.

The clamp ring 129 is disposed on the focus ring 128 to cover a part of the wafer w. That is, the clamp ring 129 is formed in an annular shape and covers an area adjacent to the periphery of the upper area of the wafer w. Therefore, the inner diameter of the clamp ring 129 is formed smaller than the inner diameter of the focus ring 128, and the inner diameter of the clamp ring 129 can be formed smaller than the outer diameter of the wafer w.

The clamp ring 129 applies a pressure to a part of the wafer w so that the wafer w is brought into close contact with the chuck table 126 and fixed. Therefore, the refrigerant gas supplied at the time of etching is prevented from flowing out to the outside. The clamp ring 129 is preferably made of silicon carbide (SiC), which has high strength and is excellent in corrosion resistance, oxidation resistance and thermal shock resistance.

The distance adjusting means 171 varies the distance between the clamp ring 129 and the focus ring 128. [ Various embodiments of the distance adjusting means 171 will be described later.

In general, a wafer (w) is formed with a semiconductor structure on a substrate, which requires various etching depending on the use of the semiconductor.

In the wafer w, the substrate is formed of sapphire or the like, and the semiconductor structure has a composition formula of In x Al y Ga 1-xy N (0 = x = 1, 0 = y = 1, 0 = x + y = 1) For example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, and the like. Since the compositions of the wafers w are different from each other, the cooling method at the time of etching and the ambient atmosphere are different. Therefore, in order to etch the wafer w, it is inconvenient to etch the semiconductor structure, to replace the equipment in the chamber, to adjust the fixing position or the fixing pressure of the wafer w, and to perform the etching process again. In other words, there is a problem that the visual process can not be unified.

Particularly, the semiconductor structure in the wafer w is likely to be damaged by the external pressure. When the semiconductor structure is pressed against the chuck table 126 by applying pressure to the clamp ring 129, the clamp ring 129 Since the wafer w needs to be cooled when the substrate is etched in the wafer w, it is necessary to press the wafer w at a pressure such that the cooling gas does not flow out to the outside in order to supply the cooling gas. 129 must adhere to the wafer w.

By varying the distance between the clamp ring 129 and the focus ring 128, the clamp ring 129 can freely adjust the pressure to press the wafer w. The distance adjusting means 171 adjusts the distance between the clamp ring 129 and the focus ring 128 according to the type of the wafer w.

Therefore, when the clamp ring 129 presses the wafer w while the ring assembly is lifted and lowered, the semiconductor structure is not broken, and the pressure can be maintained to such an extent that the refrigerant gas required for etching the substrate does not leak.

Therefore, conventionally, in order to perform the etching process of the semiconductor structure and the substrate, it is necessary to open and assemble the chamber. However, according to the embodiment, the process can be simplified and the process time can be shortened. Further, according to the embodiment, it is possible to improve the yield reduction due to the inflow of foreign matter that may occur when the chamber is opened and closed.

Further, there is an advantage of preventing the outflow of the refrigerant gas at the time of etching the substrate.

2 is a cross-sectional view of a semiconductor etching apparatus according to another embodiment.

The distance adjusting means 171 may include a rotary screw 171 rotatably fixed to one of the clamp ring 129 and the focus ring 128 and screwed to the other.

For example, the rotary screw 171 is rotatably fixed to the clamp ring 129. That is, a hole is formed in the clamp ring 129, a rotating screw 171 is passed through the hole, and the hole formed in the clamp ring 129 and the rotating screw 171 are connected to each other by a bearing (not shown) or a hinge As shown in Fig. Then, the rotary screw 171 is screwed to the focus ring 128. Therefore, the rotation of the rotary screw 171 causes the focus ring 128 to move up and down, thereby adjusting the distance between the clamp ring 129 and the focus ring 128.

As another example, it is also possible to arrange them in reverse to the above.

3 is a cross-sectional view showing a cross section of a semiconductor etching apparatus according to another embodiment.

The distance adjusting means 170 includes a screw pin 172 rotatably fixed to one of the clamp ring 129 and the focus ring 128 and screwed to the other one, (173).

The screw pin 172 is engaged with the rotation screw 171 described in the embodiment of FIG.

The driving unit 173 rotates the screw pin 172 to vary the distance between the clamp ring 129 and the focus ring 128. [

The driving unit 173 may include a servo motor or a stepping motor capable of precise control. However, it is natural that other kinds of driving means can be used.

4 is a cross-sectional view showing a cross section of a semiconductor etching apparatus according to still another embodiment.

 The distance adjusting means 170 is connected to either the clamp ring 129 or the focus ring 128 and includes a rod 175 passing through the other one and a cylinder 175 reciprocating the rod 175 174).

For example, a rod 175 is coupled to the focus ring 128 and through the clamp ring 129 to the cylinder 174. Then, the cylinder 174 is coupled to the clamp ring 129 to reciprocate the rod 175. Thus, the distance between the clamp ring 129 and the focus ring 128 is adjusted. Of course, the opposite is also possible.

Here, the cylinder 174 may include a pneumatic or hydraulic cylinder 174.

5 is a structural view showing a cross section of the chuck table according to the embodiment.

A susceptor 10 and a refrigerant supply line 150 for vertically penetrating the susceptor 10 to supply a refrigerant gas to the susceptor 10 and a refrigerant supply line 150 formed inside the susceptor 10 and supplied through the refrigerant supply line 150 A space part 14 formed on the susceptor 10 for covering and dispersing the space 14 and a wafer w placed on an upper surface of the susceptor 10 and a refrigerant gas And a ceramic puck 16 for flow.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It should be understood that various modifications may be made by those skilled in the art without departing from the spirit and scope of the present invention.

Claims (9)

A process chamber 100 to which a reaction gas is supplied and a reaction region is defined;
An upper electrode 102 installed inside the process chamber and to which a predetermined electric power is applied;
A lower electrode 124 spaced apart from the upper electrode 102 and to which a predetermined electric power is applied to convert the reaction gas into a plasma state;
A chuck table 126 mounted on the lower electrode 124 and on which the pedestal is placed;
A refrigerant supply line (150) for supplying a refrigerant for cooling the cooking utensil; And
And a ring assembly that surrounds the edge of the chuck table (126) and fixes the casting object,
The ring assembly includes:
A focus ring 128 surrounding the edge of the chuck table 126 and surrounding a side of the wedge angle 126;
A clamp ring (129) disposed on the focus ring (128) and covering a part of the crucible; And
And distance adjusting means (170) for varying the distance between the clamp ring (129) and the focus ring (128). The method according to claim 1,
Wherein an inner diameter of the clamp ring (129) is smaller than an inner diameter of the focus ring (128). The method according to claim 1,
Wherein an inner diameter of the clamp ring (129) is formed to be smaller than an outer diameter of the projected product. The method according to claim 1,
The distance adjusting means (170)
And a rotary screw (171) rotatably fixed to one of the clamp ring (129) and the focus ring (128) and screwed to the other. The method according to claim 1,
The distance adjusting means (170)
A screw pin 172 rotatably fixed to one of the clamp ring 129 and the focus ring 128 and screwed to the other one;
And a driving unit (173) for rotating the screw pin (172). The method according to claim 1,
The distance adjusting means (170)
A rod 175 coupled to one of the clamp ring 129 and the focus ring 128 and passing through the other of the clamp ring 129 and the focus ring 128;
And a cylinder (174) reciprocating the rod (175) and coupled to the other. The method according to claim 1,
Wherein one of the chuck table (126) and the ring assembly is raised and lowered. The method according to claim 1,
Wherein the refrigerant comprises helium. The method according to claim 1,
The refrigerant supply line (150)
And is formed to penetrate through the lower electrode (124) and the chuck table (126).
KR1020120126147A 2012-11-08 2012-11-08 Semiconductor etching apparatus KR102031666B1 (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102562102B1 (en) 2023-03-02 2023-08-02 (주)본씨앤아이 Cooling system for semiconductor facilities using eco-friendly refrigerant
CN112713075B (en) * 2019-10-25 2024-03-12 中微半导体设备(上海)股份有限公司 Plasma isolation ring, plasma processing device and substrate processing method

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05140771A (en) * 1991-11-15 1993-06-08 Nissin Electric Co Ltd Etching apparatus
JP2000072529A (en) * 1998-08-26 2000-03-07 Toshiba Ceramics Co Ltd Plasma-resistant member and plasma-treatment apparatus using the same
KR20110077575A (en) * 2009-12-30 2011-07-07 주식회사 탑 엔지니어링 Focus ring of plasma processing apparatus and plasma processing apparatus having the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05140771A (en) * 1991-11-15 1993-06-08 Nissin Electric Co Ltd Etching apparatus
JP2000072529A (en) * 1998-08-26 2000-03-07 Toshiba Ceramics Co Ltd Plasma-resistant member and plasma-treatment apparatus using the same
KR20110077575A (en) * 2009-12-30 2011-07-07 주식회사 탑 엔지니어링 Focus ring of plasma processing apparatus and plasma processing apparatus having the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112713075B (en) * 2019-10-25 2024-03-12 中微半导体设备(上海)股份有限公司 Plasma isolation ring, plasma processing device and substrate processing method
KR102562102B1 (en) 2023-03-02 2023-08-02 (주)본씨앤아이 Cooling system for semiconductor facilities using eco-friendly refrigerant

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