KR20140052537A - Light emitting unit and manufacturing method of the same - Google Patents

Light emitting unit and manufacturing method of the same Download PDF

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Publication number
KR20140052537A
KR20140052537A KR1020120118698A KR20120118698A KR20140052537A KR 20140052537 A KR20140052537 A KR 20140052537A KR 1020120118698 A KR1020120118698 A KR 1020120118698A KR 20120118698 A KR20120118698 A KR 20120118698A KR 20140052537 A KR20140052537 A KR 20140052537A
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KR
South Korea
Prior art keywords
wavelength
light emitting
wavelength conversion
emitting chip
light
Prior art date
Application number
KR1020120118698A
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Korean (ko)
Inventor
김진하
김진우
문정제
이상범
Original Assignee
삼성전자주식회사
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Priority to KR1020120118698A priority Critical patent/KR20140052537A/en
Publication of KR20140052537A publication Critical patent/KR20140052537A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

The present invention relates to a light emitting device and a manufacturing method thereof. One aspect of the present invention relates to the light emitting device which includes a light emitting chip and a wavelength conversion unit which is arranged on the optical path of the light emitting chip and includes a first wavelength conversion material to increase conversion efficiency according as a wavelength is increased in a part of band in the wavelength range of light emitted from the light emitting chip and a second wavelength conversion material to decrease the conversion efficiency. According to one embodiment of the present invention, obtained is the light emitting device with a color dispersion reducing structure when a plurality of light emitting devices are manufactured.

Description

TECHNICAL FIELD [0001] The present invention relates to a light emitting device,

The present invention relates to a light emitting device and a manufacturing method thereof.

A light emitting diode (LED), which is one type of semiconductor light emitting device, is a semiconductor device capable of generating light of various colors due to recombination of electrons and holes at a junction portion of p and n type semiconductors when an electric current is applied. Such a light emitting diode has been continuously increasing in demand because it has many advantages such as a long lifetime, a low power supply, an excellent initial driving characteristic, and a high vibration resistance as compared with a light emitting device based on a filament. Particularly, in recent years, a group III nitride semiconductor capable of emitting light in a short wavelength range of a blue series has been spotlighted.

Meanwhile, in the case of a light emitting device used for an LCD backlight unit and the like, a cold cathode fluorescent lamp (CCFL) has been conventionally used. However, since CCFL uses mercury gas, it can cause environmental pollution, It has a disadvantage that it is not only low in color reproducibility, but also is not suitable for thinning and shortening of LCD panel. On the other hand, light emitting diodes are eco-friendly, and response speed is as high as several nanoseconds, which is effective for video signal streams, enables impulsive driving, has a color reproducibility of 100% or more, The color temperature and the like can be arbitrarily changed by adjusting the light quantity of the LCD panel, and the LED panel has advantages that are suitable for light and short life of the LCD panel.

In the case of a light-emitting device used for such a backlight unit, a material such as a fluorescent material or a quantum dot that can convert the wavelength of light emitted from the light-emitting device to enable white light emission may be included. The light emitting device including the wavelength converting material may have different color characteristics of light emitted according to the wavelength characteristics of the light emitting chip, the amount of the wavelength changing material, the arrangement type of the wavelength changing material, and the like, Studies are being actively carried out to reduce scatter.

One of the objects of the present invention is to provide a light emitting device having a structure in which color scattering can be reduced when a large number of light emitting devices are manufactured.

Another object of the present invention is to provide a method capable of efficiently producing the above light emitting device.

It should be understood, however, that the scope of the present invention is not limited thereto and that the objects and effects which can be understood from the solution means and the embodiments of the problems described below are also included therein.

According to an aspect of the present invention,

A first wavelength conversion material disposed on a light path of the light emitting chip and having a characteristic that a conversion efficiency increases as a wavelength increases in at least a part of a wavelength range of light emitted from the light emitting chip, And a second wavelength conversion material having a characteristic that the wavelength conversion material is reduced.

In an embodiment of the present invention, the first and second wavelength converting materials may emit light of the same color.

In this case, the wavelength converter emits light of the same color as that of the first and second wavelength converting materials, and the conversion efficiency increases or decreases as the wavelength increases within the wavelength range of the light emitted from the light emitting chip. And may further include a wavelength converting material.

In an embodiment of the present invention, when the light emitting chip is used as the excitation light source, the first and second wavelength conversion materials may have a difference in central wavelength on the emission spectrum of 60 nm or less.

In an embodiment of the present invention, the wavelength converter may further include an additional wavelength conversion material emitting a color different from the first and second wavelength conversion materials.

In this case, the additional wavelength conversion material may include a third wavelength conversion material having a characteristic that a conversion efficiency increases as a wavelength increases in at least a part of a wavelength range of light emitted from the light emitting chip, And the fourth wavelength conversion material.

In one embodiment of the present invention, at least a part of the wavelength range of light emitted from the light emitting chip may include a central wavelength in a spectrum of light emitted from the light emitting chip.

In one embodiment of the present invention, one of the first and second wavelength conversion materials may be a silicate-based phosphor and the other may be a nitride-based phosphor.

In one embodiment of the present invention, one of the first and second wavelength conversion materials may be a silicate-based phosphor and the other may be a garnet-based phosphor.

The light emitting chip emits blue light, and the first and second wavelength converting materials convert blue light to emit yellow light.

According to another aspect of the present invention,

Emitting chip and a first wavelength converting material having a characteristic in which a conversion efficiency increases as a wavelength increases in at least a part of a wavelength range of light emitted from the light emitting chip on a light path of the light emitting chip, And forming a wavelength conversion portion having a second wavelength conversion material having a property of decreasing the efficiency.

According to an embodiment of the present invention, the step of providing the light emitting chip may include the steps of disposing a plurality of light emitting chips on a substrate, integrally forming the wavelength converting part to cover the plurality of light emitting chips, And separating the integrally formed wavelength converter so that the chip is separated in units of devices.

In an embodiment of the present invention, the first and second wavelength converting materials may emit light of the same color.

In one embodiment of the present invention, the wavelength converter emits light of the same color as the first and second wavelength converting materials, and the conversion efficiency increases as the wavelength increases within the wavelength range of the light emitted from the light emitting chip. Lt; RTI ID = 0.0 > and / or < / RTI >

In an embodiment of the present invention, when the light emitting chip is used as the excitation light source, the first and second wavelength conversion materials may have a difference in central wavelength on the emission spectrum of 60 nm or less.

In an embodiment of the present invention, the wavelength converter may further include an additional wavelength conversion material emitting a color different from the first and second wavelength conversion materials.

In this case, the additional wavelength conversion material may include a third wavelength conversion material having a characteristic that a conversion efficiency increases as a wavelength increases in at least a part of a wavelength range of light emitted from the light emitting chip, And the fourth wavelength conversion material.

According to the embodiment of the present invention, it is possible to obtain a light emitting device having a structure in which color scattering can be reduced when a plurality of light emitting devices are manufactured. In addition, a method capable of efficiently producing the above light emitting device can be obtained.

However, the effect obtained from the present invention is not limited to this, and even if not explicitly mentioned, the object or effect which can be grasped from the solution means or the embodiment of the task described below is also included therein.

1 is a cross-sectional view schematically showing a light emitting device according to an embodiment of the present invention.
FIG. 2 is a graph showing a change in conversion efficiency depending on the wavelength of the wavelength changing material included in the light emitting device of FIG.
Figs. 3 and 4 are graphs for comparing the color dispersion of the light emitting device obtained according to the comparative example and the embodiment, respectively.
5 and 6 are cross-sectional views schematically showing a light emitting device according to another embodiment of the present invention.
7 and 8 are cross-sectional views schematically showing a method of manufacturing a light emitting device according to an embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

The embodiments of the present invention can be modified into various other forms, and the scope of the present invention is not limited to the embodiments described below. It is to be understood that both the foregoing general description and the following detailed description are exemplary, explanatory and are intended to provide further explanation of the invention, and are not intended to be exhaustive or to limit the invention to the precise forms disclosed. . Accordingly, the shapes and sizes of the elements in the drawings and the like can be exaggerated for clarity.

1 is a cross-sectional view schematically showing a light emitting device according to an embodiment of the present invention. FIG. 2 is a graph showing a change in conversion efficiency depending on the wavelength of the wavelength changing material included in the light emitting device of FIG. 3 and 4 are graphs for comparing the color dispersion of the light emitting device obtained according to the comparative example and the embodiment, respectively.

1, a light emitting device 100 according to the present embodiment includes a light emitting chip 101, a main body 102, a wavelength conversion element 103 having first and second wavelength change materials 103 and 104, And the first and second wavelength converting materials 103 and 104 may be dispersed in the encapsulating portion 105. The light emitting chip 101 may be any device capable of emitting light, and preferably a light emitting diode may be used. The body 102 provides a mounting area of the light emitting chip 101, and is not particularly limited to a material or a shape, but may have a reflection cup structure, as shown in Fig. Also, although not shown separately, the main body 102 may have a wiring pattern for applying an electric signal to the light emitting chip 101 on its surface or inside thereof. However, the main body 102 may not be provided according to the embodiment, and in this case, the wavelength converting portion may be applied to the surface of the light emitting chip 101 or the like.

In the case of the present embodiment, the wavelength converting portion disposed on the light path of the light emitting chip 101 includes first and second wavelength converting materials 103 and 104 dispersed in transparent silicone resin, epoxy resin or the like. The first and second wavelength converting materials 103 and 104 are inversely of the conversion efficiency depending on the wavelength in at least a part of the wavelength range of the light emitted from the light emitting chip 101. That is, as shown in FIG. 2, as the wavelength of the light emitted from the light emitting chip 101 increases, the conversion efficiency of the first wavelength conversion material 103 increases. On the other hand, The conversion efficiency of the second wavelength conversion material 104 decreases as the wavelength of the light emitted from the second wavelength conversion material 104 increases. In this case, it is not necessary that the conversion efficiencies of the first and second wavelength converting materials 103 and 104 are opposite to each other in the entire wavelength range that the first and second wavelength converting materials 103 and 104 can emit. It is only necessary to show the above-mentioned characteristic in a wavelength, for example, a blue wavelength band. The wavelength band of the light emitting chip 101 serving as a reference for measuring the conversion efficiency of the first and second wavelength converting materials 103 and 104 includes the center wavelength in the spectrum of the light emitted from the light emitting chip 101 .

In addition, the first and second wavelength-converting materials 103 and 104 having the opposite tendency of conversion efficiency in the wavelength band of the light emitting chip 101 may emit light of the same color. For example, the first and second wavelength conversion materials 103 and 104 may emit yellow light. When blue light is emitted from the light emitting chip 101, the light emitting device 100 emits white light . ≪ / RTI > In this case, when the light emitting chip 101 is used as the excitation light source, the first and second wavelength conversion materials 103 and 104 emit light of the same color. Can be defined as the difference in central wavelength on the luminescence spectrum by about 60 nm or less. The first and second wavelength converting materials 103 and 104 can be any of phosphors and quantum dots as long as they satisfy the above-described characteristics. For example, the first and second wavelength converting materials 103 and 104 may be a silicate phosphor, As the wavelength change material 104, a nitride phosphor can be used. As another example, a silicate phosphor may be used as the first wavelength conversion material 103, and a garnet-based phosphor may be used as the second wavelength-change material 104.

As described above, in this embodiment, two or more kinds of wavelength converting materials emitting the same color are used instead of using a single wavelength converting material to emit one color, and the conversion efficiency characteristics of these wavelength converting materials are different. Even if the light emitting chip 101 manufactured using the semiconductor growth process or the like is manufactured with the same color intention, there is a difference in the wavelength emitted by each chip. The wavelength dispersion of the light emitting chip 101 may cause color scattering for each light emitting device 100 even when white light is obtained by applying a wavelength changing material. Particularly, when a single wavelength conversion material (for example, one kind of yellow phosphor) is applied to a plurality of light emitting chips 101 having wavelength dispersion, even if the amount or distribution of the wavelength conversion material is kept constant, Further, the conversion efficiency of the wavelength conversion material is varied according to the wavelength dispersion of the light emitting chip 101, so that the difference in color characteristics between the light emitting chips 101 having different wavelengths becomes larger.

In the present embodiment, the first and second wavelength conversion materials 103 and 104 having different tendencies of conversion efficiency are emitted together with the same color as the wavelength conversion unit, so that the difference in color characteristics between the light emitting chips 101 having wavelength dispersion Respectively. That is, assuming that there are two blue light emitting chips having different center wavelengths and that the emitted light of the first light emitting chip has a larger wavelength than the emitted light of the second light emitting chip, The chip can emit a higher intensity of light, and conversely, the second wavelength conversion material 104 can emit a higher intensity of light by the second light emitting chip. Therefore, if a wavelength converter including both the first and second wavelength conversion materials 103 and 104 is used, the first and second wavelength conversion materials 103 and 104 can be changed in wavelength, The overall conversion efficiency of the wavelength conversion unit can be similar to those of the plurality of light emitting chips 101 with wavelength dispersion. Particularly, the wavelength converter capable of reducing the color scattering can have a greater effect when the wavelength conversion material is applied to the wafer level, and the wavelength dispersion between the chips can be relatively increased in the case of the wafer level.

On the other hand, when it is difficult to compensate the conversion efficiency by using only one kind of the first and second wavelength conversion materials 103 and 104, the wavelength conversion unit may perform additional wavelength conversion with the same conversion efficiency Material. ≪ / RTI > That is, the wavelength converting unit emits light of the same color as that of the first and second wavelength converting materials 103 and 104, for example, yellow, and as the wavelength increases within the wavelength range of the light emitted from the light emitting chip 101, And may further include additional wavelength converting materials whose efficiency is increased or decreased.

In addition, the wavelength converter may further include an additional wavelength conversion material that emits a different color from the first and second wavelength conversion materials 103 and 104, for example, green, orange or red. In this case, the conversion efficiency compensation structure for reducing the chromatic dispersion as described above may be used even in the case of the additional wavelength conversion material. In other words, the additional wavelength conversion material that emits different colors from the first and second wavelength conversion materials 103 and 104 may have a higher conversion efficiency as the wavelength increases in at least a part of the wavelength range of the light emitted from the light emitting chip 101 And a fourth wavelength conversion material having a property of reducing the conversion efficiency.

3 and 4, in the comparative example of FIG. 3, the wavelength conversion material is applied to each of the light emitting chips at the wafer level to show the light emission characteristic, and the blue light emitting chip To which one kind of yellow phosphor is applied. In the embodiment of FIG. 4, the wavelength conversion material is applied to each of the light emitting chips at the wafer level to show the luminescence characteristics. Two types of yellow phosphors having different conversion efficiency depending on the wavelength are used together in the blue light emitting chip. As can be seen from the results of FIG. 3 and FIG. 4, when the color dispersion reduction wavelength conversion unit is applied as in the embodiment, the color dispersion in the wafer is about 1000 K. As compared with the comparative example in which the color dispersion in the wafer is about 1500 K, Can be confirmed.

5 and 6 are cross-sectional views schematically showing a light emitting device according to another embodiment of the present invention. Both the embodiments of Figs. 5 and 6 have the same wavelength conversion section for reducing color scattering as in the previous embodiment, but are modified in the shape of the apparatus. As described above, the wavelength converter for reducing color scattering proposed by the present invention can be applied to various types of light emitting devices. First, the light emitting device 200 according to the embodiment of FIG. 5 has a pair of lead frames 202a and 202b. At least one surface, for example, a bottom surface of the light emitting device 200 is exposed to the outside, . The light emitting chip 201 is disposed in at least one of the pair of lead frames 202a and 202b (one in this embodiment) and the wire W may be used for electrical connection. The encapsulant 205 has a lens shape and can be provided to hold the shape thereof in combination with the light emitting chip 201, the lead frames 202a and 202b. A wavelength conversion section is formed in the optical path of the light emitting chip 201 inside the encapsulant 205. The wavelength conversion section converts wavelengths in at least a part of the wavelength range of light emitted from the light emitting chip 201, The first and second wavelength conversion materials 203 and 204 having the opposite modes of change in conversion efficiency according to the change of the wavelength conversion materials 203 and 204 are minimized by minimizing the wavelength dispersion caused by the wavelength dispersion between the light emitting chips 201.

Next, the light emitting device 300 according to the embodiment of FIG. 6 is a structure in which the wavelength conversion section is directly applied to at least a part of the surface of the light emitting chip 301. In other words, at least a part of the light emitting surface of the light emitting chip 301, in this embodiment, the change in the conversion efficiency due to the change in the wavelength in at least a part of the wavelength range of the light emitted from the light emitting chip 301 The first and second wavelength converting materials 303 and 304 may be dispersed within the encapsulating material 305. The first and second wavelength converting materials 303 and 304 may be dispersed within the encapsulating material 305. [ However, in the present embodiment, the first and second wavelength converting materials 303 and 304 may be directly formed on the surface of the light emitting chip 301 without the sealing material 305 being separately provided.

Hereinafter, an example of a method of manufacturing a light emitting device having the above-described structure with reference to Figs. 7 and 8 will be described. The fabrication method of the light emitting device shown in Figs. 7 and 8 explains application of a wavelength conversion unit at the wafer level (dicing in units of a chip after the entire wavelength conversion unit is applied). However, (Applying a wavelength conversion unit to each chip after dicing in units of chips).

First, as shown in Fig. 7, a light emitting chip 401 is provided. In this case, a plurality of light emitting chips 401 are provided on the substrate 400, and the substrate 400 may be a growth substrate or a carrier substrate necessary for manufacturing the light emitting chip 401. The plurality of light emitting chips 401 can be obtained in the same manufacturing process, and wavelength scattering may occur even if they are intended to have the same physical properties. In FIG. 6, the plurality of light emitting chips 401 are separated from each other, but they may be connected to each other without being separated.

Next, as shown in FIG. 8, the wavelength converting portion is coated so as to cover the light emitting chip 401, and the wavelength converting portion can be integrally formed by applying the light emitting chip 401 to a plurality of light emitting chips 401 at the same time. The wavelength converter may include first and second wavelength converting materials 403 and 404 whose mutation in the conversion efficiency is different from each other in at least a part of the wavelength range of the light emitted from the light emitting chip 401 And the first and second wavelength converting materials 403 and 404 may be dispersed in the encapsulant 405. However, in the present embodiment, the sealing material 405 is not provided separately, and the first and second wavelength converting materials 403 and 404 may be directly applied to the light emitting chip 401. As in the present embodiment, coating of a plurality of light emitting chips 401 with a wavelength conversion portion is referred to as a wafer level coating method, and there is a problem that wavelength dispersion is likely to occur between a plurality of light emitting chips 401. However, The color dispersion can be reduced by using the first and second wavelength conversion materials 403 and 404 having different tilt characteristics of conversion efficiency while emitting the same color. Although not shown, after the wavelength conversion section is formed, the individual light emitting devices can be obtained by separating the wavelength conversion sections integrally formed so as to be separated by each light emitting chip 401.

The present invention is not limited by the above-described embodiments and the accompanying drawings, but is intended to be limited only by the appended claims. It will be apparent to those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. something to do.

101: light emitting chip 102:
103: first wavelength conversion material 104: second wavelength conversion material
105: sealing portion 202a, 202b: lead frame

Claims (10)

A light emitting chip; And
A first wavelength conversion material disposed on an optical path of the light emitting chip and having a characteristic that a conversion efficiency increases as a wavelength increases in at least a part of a wavelength range of light emitted from the light emitting chip, A second wavelength conversion material having a second wavelength conversion characteristic;
.
The method according to claim 1,
Wherein the first and second wavelength converting materials emit light of the same color.
3. The method of claim 2,
Wherein the wavelength conversion unit emits light of the same color as that of the first and second wavelength conversion materials, and further comprises a wavelength conversion material which increases or decreases in conversion efficiency as the wavelength increases within a wavelength range of light emitted from the light emitting chip, Emitting device.
The method according to claim 1,
Wherein the first wavelength conversion material and the second wavelength conversion material have a difference in center wavelength on an emission spectrum when the light emitting chip is used as an excitation light source is 60 nm or less.
The method according to claim 1,
Wherein the wavelength converter further comprises an additional wavelength conversion material that emits a color different from that of the first and second wavelength conversion materials.
6. The method of claim 5,
The additional wavelength conversion material may include a third wavelength conversion material having a characteristic that a conversion efficiency increases as a wavelength increases in at least a part of a wavelength range of light emitted from the light emitting chip, And a wavelength conversion material.
The method according to claim 1,
Wherein at least a part of a wavelength range of light emitted from the light emitting chip includes a center wavelength in a spectrum of light emitted from the light emitting chip.
The method according to claim 1,
Wherein one of the first and second wavelength conversion materials is a silicate-based phosphor and the other is a nitride-based phosphor.
The method according to claim 1,
Wherein one of the first and second wavelength converting materials is a silicate-based phosphor and the other is a garnet fluorescent material.
Providing a light emitting chip; And
A first wavelength conversion material having a characteristic in which a conversion efficiency increases as a wavelength increases in at least a part of a wavelength range of light emitted from the light emitting chip on a light path of the light emitting chip, Forming a wavelength conversion portion having a second wavelength conversion material;
Emitting device.
KR1020120118698A 2012-10-24 2012-10-24 Light emitting unit and manufacturing method of the same KR20140052537A (en)

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