KR20140033587A - Yttria-zirconia complex oxide having corrosion resistance of plasma - Google Patents

Abstract

Disclosed is an yttria-zirconia complex oxide having corrosion resistance to plasma, which does not generate breakage by having high corrosion resistance properties to plasma and high mechanical strength. Contents of an yttria powder and zirconia in the complex oxide are 95-45 wt%:5-55 wt%, and the yttria and zirconia form a solid solution by being sintered. [Reference numerals] (AA) Relative etching speed; (BB) Alumina; (CC) Yttria; (DD) Present invention

Description

Yttria-zirconia complex oxide having corrosion resistance of plasma

The present invention relates to an yttria-zirconia composite oxide, and more particularly, to an yttria-zirconia composite oxide, which is employed as a member of a microelectronic component manufacturing apparatus that has high corrosion resistance to plasma and can maintain thermal stability for a long time. will be.

Microelectronic components such as semiconductor devices and liquid crystal display devices are made by repeating a process of laminating, patterning, etching, and cleaning various metals and nonmetal materials. Among these, the etching process is one of the most frequently performed processes to form the material to be etched in a desired form. The etching process is performed by various equipments and methods, which can be divided into isotropic etching and anisotropic etching. Isotropic etching is a method in which etching is performed along a specific direction, and chemical etching such as wet etching or barrel plasma etching usually belongs to it.

Anisotropic etching includes most of the dry etching such as reactive ion etching. In reactive ion etching, the reaction gas is ionized and electrically accelerated in the process chamber, thereby mainly etching along the electric field. In such dry etching, plasma is mostly formed to activate the reaction gas, and a method of applying a high frequency (RF) electric field to the reaction gas is mainly used to form the plasma. However, in recent years, as microelectronic components become more and more fine, RF power continues to increase, and corrosion resistance to plasma has become important. For example, about 1,000W of RF power was generally used, but recently about 2,500W of power is required.

Conventionally, alumina (Al ₂ O ₃ ) is mainly used as a member used in the microelectronic component manufacturing equipment. However, since the corrosion resistance to plasma is weak, it is not suitable as a member in an environment where RF power is increased. In order to overcome this problem, a yttria (Y ₂ O ₃ ) layer was applied to the alumina, but the yttria has a bending strength of about 160 MPa, which is significantly smaller than that of the alumina, about 430 MPa, resulting in low thermal stability and damage. Happened easily. Here, the members of the microelectronic component manufacturing apparatus include a nozzle, an injector, rings, and the like.

Figure 1a is a graph showing the etching rate of the alumina and yttria employed as a member of the conventional microelectronic component manufacturing equipment, Figure 1b is a scanning electron microscope (SEM) by 1,000 times magnification after etching for each of the alumina and yttria It is a photograph showing the microstructure examined. At this time, the pressure of the chamber was 100mTorr, the plasma power was 800W, the etching time was 300 minutes, the etching gas was CF ₄ 54sccm and O ₂ 5sccm. As shown, when the etching rate of alumina is 1, the etching rate of yttria is 0.22, which is significantly lower than that of alumina. It was found by the microstructure that the surface was more corroded than yttria due to the high etching rate of alumina.

Meanwhile, the room temperature bending strength was about 430 MPa for alumina and about 160 MPa for yttria. At this time, the bending strength is expressed as withstanding thermal shock, but substantially represents the mechanical strength of the member. That is, yttria, despite the significantly higher resistance to etching than alumina, means that the yttria is easily broken by external impact due to its low strength. Accordingly, the conventional member using yttria coated with alumina may have a high resistance to etching, but is difficult to apply to microelectronic component manufacturing equipment due to breakage of yttria. In particular, the higher the RF power, the greater the thermal shock, so that damage of yttria becomes more problematic.

The problem to be solved by the present invention is to provide an yttria-zirconia composite oxide having high corrosion resistance to the plasma and high mechanical strength and corrosion resistance to the plasma does not occur.

Yttria-zirconia composite oxide of the present invention for achieving the above object is the content of yttria and zirconia 95 ~ 45wt%: 5 ~ 55wt%, when the yttria and zirconia sintered the yttria and zirconia solid solution It is characterized by forming a (solid solution). Here, the content of the zirconia is preferably 8 ~ 15wt%.

In addition, the zirconia includes yttria, wherein the content of the yttria may be 0 mol% to 10 mol%. Furthermore, the yttria-zirconia composite oxide may simultaneously have etch resistance to the plasma of yttria and mechanical strength of zirconia.

In the present invention, the yttria-zirconia composite oxide has a cubic structure having an interplanar angle of about 3 degrees and may be used as a member of a microelectronic component manufacturing equipment. In addition, the etching rate of the yttria-zirconia composite oxide is 100mTorr in the chamber, the plasma power is 800W, the etching time is 800 minutes, the etching gas is CF ₄ 54sccm and O ₂ 5sccm, when the alumina is 1 , Greater than 0.28 and less than 0.31.

In this case, the bending strength of the yttria-zirconia composite oxide may be 250 to 260 MPa, more preferably 255 to 260 MPa. In addition, the grain size of the yttria-zirconia composite oxide may be 0.70 μm to 1.60 μm, and more preferably 0.70 μm to 0.80. In addition, the yttria-zirconia composite oxide has a density of 99.7 to 99.8 (g / cm ³ ).

According to the yttria-zirconia composite oxide having corrosion resistance to plasma, the yttria-zirconia composite oxide is used as a member constituting the microelectronic component manufacturing equipment, so that the corrosion resistance to the plasma is high and the mechanical strength is high in the plasma environment. This can provide a member that does not occur. In addition, by varying the bending strength, etching resistance and the density according to the content of zirconia, the member of the present invention can be employed in various environments.

FIG. 1A is a graph illustrating etching rates of alumina and yttria employed as members of a conventional microelectronic component manufacturing apparatus.
FIG. 1B is a photograph showing a microstructure of each of alumina and yttria after being etched by a scanning electron microscope (SEM) 1000 times after etching.
Figure 2a is a graph comparing the etching rate of alumina, zirconia and yttria conventionally employed as a member of the microelectronic component manufacturing equipment of the present invention.
Figure 2b is a photograph showing a microstructure magnified 1000 times with a scanning electron microscope (SEM) after etching for each of the alumina, zirconia and yttria.
Figure 3 is a magnification of 10,000 times with a scanning electron microscope (SEM) to compare the microstructure of the yttria-zirconia composite oxide according to the present invention with pure yttria.
Figure 4 is a graph of the energy dispersion X-ray spectroscopy (EDX) of the yttria-zirconia composite oxide and pure yttria according to the present invention.
5 is an electron micrograph showing a selective area diffraction pattern of the yttria-zirconia composite oxide and pure yttria according to the present invention.
6 is a graph showing the bending strength according to the thermal shock frequency of the yttria-zirconia composite oxide and pure yttria according to the present invention.
Figure 7a is a graph showing the etching rate of the alumina, pure yttria and the composite oxide of the present invention used in the prior art and the members of the microelectronic component manufacturing apparatus of the present invention.
FIG. 7B is a photograph showing the microstructure of the alumina, the pure yttria, and the composite oxide of the present invention after being etched by a scanning electron microscope (SEM) 1000 times after etching.
FIG. 8 is an enlarged photograph 3,000 times with an optical microscope to examine the microstructure of the yttria-zirconia composite oxide and the conventional yttria-alumina composite oxide according to the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. The embodiments described below can be modified into various other forms, and the scope of the present invention is not limited to the embodiments described below. The embodiments of the present invention are provided to enable those skilled in the art to more fully understand the present invention.

According to the embodiment of the present invention, by using the yttria-zirconia composite oxide as a member constituting the microelectronic component manufacturing equipment, the microelectronic component manufacturing equipment having high corrosion resistance to the plasma and high mechanical strength in the plasma environment does not cause damage. Present the absence of. Here, the members of the microelectronic component manufacturing apparatus include a nozzle, an injector, rings, and the like. To this end, the etching rate and the bending strength of alumina, zirconia and yttria conventionally applied to the present invention and the above-mentioned members are examined, and the yttria-zirconia composite oxide of the present invention is compared with pure yttria to know its characteristics in detail. Let's look at it. Furthermore, the yttria-zirconia composite oxide of the present invention is intended to clarify the improved physical properties compared to conventional yttria-alumina. In this case, the bending strength is expressed as enduring thermal shock, but can be said to substantially represent the mechanical strength of the member that withstands external shocks.

Figure 2a is a graph comparing the etching rates of alumina, zirconia and yttria conventionally employed as a member of the microelectronic components manufacturing equipment of the present invention and the embodiment, Figure 2b is a scan after etching for each of the alumina, zirconia and yttria It is a photograph showing the microstructure magnified 1,000 times with an electron microscope (SEM). At this time, the pressure of the chamber was 100mTorr, the plasma power was 800W, the etching time was 300 minutes, the etching gas was CF ₄ 54sccm and O ₂ 5sccm. As shown, when the etching rate of alumina was 1, the etching rate of zirconia was 0.65, which was smaller than that of alumina, and the etching rate of yttria was 0.22, which was significantly lower than that of alumina. In addition, due to the difference in the etching rate, it can be seen from the microstructure that alumina is more severely corroded than zirconia and yttria, and that zirconia is more etched than yttria.

Meanwhile, the room temperature bending strength was about 430 MPa for alumina, about 900 MPa for zirconia, and about 160 MPa for yttria. In other words, alumina had a smaller bending strength than zirconia but larger than yttria, and zirconia had the largest bending strength but the etching occurred faster than yttria, and yttria had a large resistance to etching but relatively low bending strength. The embodiment of the present invention provides an yttria-zirconia composite oxide sintered by mixing zirconia having the highest bending strength with yttria having the largest etching resistance to plasma in consideration of the characteristics of the above materials.

FIG. 3 is a photograph magnified 10,000 times with a scanning electron microscope (SEM) to compare the microstructure of the yttria-zirconia composite oxide according to an embodiment of the present invention with pure yttria. In addition, in order to confirm the physical properties of the composite oxide and pure yttria of the present invention, the respective bending strengths, grain average diameters and densities were measured.

3, the bending strength of the composite oxide according to the embodiment of the present invention was 258 MPa, the average grain size was 0.78 µm, and the density was 99.7 (g / cm ³ ). In contrast, the pure yttria had a bending strength of 150 MPa, a grain average diameter of 1.42 µm, and a density of 98.4 (g / cm ³ ). In other words, as can be seen from the photograph, the composite oxide of the present invention has a grain size of about 1/2 smaller than that of pure yttria, and has a high density (small porosity) to form a dense structure. In addition, the bending strength was about 100 MPa higher than that of pure yttria, and it was confirmed that the yttria-zirconia composite oxide of the present invention was suitable as a member of the microelectronic component manufacturing equipment.

The yttria-zirconia composite oxide according to an embodiment of the present invention is mixed with yttria (see FIGS. 2a and 2b) having excellent etching resistance and zirconia having high bending strength (FIG. 4), which is mechanical strength, and has excellent resistance to etching. And mechanical strength can be obtained simultaneously. In addition, since the grain size is small and the density is high, it has a compact structure, so that the physical property decreases with respect to external impacts over time. Accordingly, the yttria-zirconia composite oxide of the present invention is an optimal material to be employed as a member of microelectronic component manufacturing equipment.

Figure 4 is a graph of the energy dispersion X-ray spectroscopy (EDX) of the yttria-zirconia composite oxide and pure yttria according to an embodiment of the present invention. As shown, the zirconium (Zr) peak is shown in the EDX graph of the yttria-zirconia composite oxide of the present invention, indicating that the yttria and zirconia of the present invention are uniformly mixed.

5 is a transmission electron microscope (TEM) image showing a selective area diffraction pattern of yttria-zirconia composite oxide and pure yttria according to an embodiment of the present invention. Specifically, pure yttria is a cubic crystal, the interplanar angle is 90 degrees, and no secondary phase exists. By the way, it was confirmed that the composite oxide of the present invention is a cubic system similar to pure yttria, but a cubic system having an interplanar angle of about 3 kV at 90 kPa and 93 kPa. As such, the twisted cubic system contributes to increasing the bending strength of the composite oxide of the present invention over pure yttria. For this reason, the composite oxide of the present invention has a greater bending strength by about 100 MPa compared to pure yttria.

The sintered body of the yttria-zirconia composite oxide according to the embodiment of the present invention is not a mixture of yttria and zirconia, and yttria and zirconia form a solid solution. Therefore, the composite oxide of the present invention simultaneously shows the etching resistance of the yttria against the plasma and the mechanical strength of the zirconia. On the other hand, since the coating of yttria on the conventional alumina does not form a solid solution, it does not have both etching resistance and mechanical strength at the same time, and there is a problem that yttria having large etching resistance is broken.

6 is a graph showing the bending strength according to the thermal shock frequency of the yttria-zirconia composite oxide and pure yttria according to the embodiment of the present invention. At this time, the thermal shock strength was confirmed by measuring the normal three-point bending strength at room temperature after applying the thermal shock. Here, the bending strength refers to the maximum tensile stress at break. Thermal shock experiments were carried out using oven equipment, for which the temperature was raised to 120 ° C. for 1 hour and then held for 30 minutes and then quenched.

As shown, the composite oxide of the present invention, even if repeated three, six, nine times the number of thermal shock, the bending strength was almost constant. That is, even if the number of thermal shocks increased, the bending strength of about 240 MPa was maintained as it is. In contrast, pure yttria showed a tendency to gradually decrease its bending strength from about 160 MPa to less than 150 MPa as the number of thermal shocks increased. This means that the composite oxide of the present invention exhibits thermal stability over a long period of time compared to pure yttria in a thermal shock environment.

FIG. 7A is a graph showing etching rates of alumina, pure yttria, and the composite oxide of the present invention, which are used in the conventional and the members of the microelectronic component manufacturing apparatus of the present invention, and FIG. 7B is alumina, pure yttria, and the composite. After etching for each oxide, it is a photograph showing a microstructure magnified 1,000 times with a scanning electron microscope (SEM). At this time, the pressure of the chamber was 100mTorr, the plasma power was 800W, the etching time was 800 minutes, the etching gas was CF ₄ 54sccm and O ₂ 5sccm.

As shown, when the etching rate of alumina was 1, the etching rate of pure yttria was 0.31, which was lower than that of alumina. It was. In addition, due to the difference in etching rate, the surface of the alumina was significantly corroded than the pure yttria and the composite oxide of the present invention, and the fine structure showed that the pure yttria caused more etching than the composite oxide of the present invention. . Accordingly, the least corrosion of the surface of the composite oxide of the present invention occurs after etching, which is useful in a plasma corrosion environment.

8 is an enlarged photograph 3,000 times with an optical microscope to examine the microstructure of the yttria-zirconia composite oxide and the conventional yttria-alumina composite oxide according to an embodiment of the present invention. In addition, in order to confirm the physical properties of the composite oxide and yttria-alumina of the present invention, the respective bending strengths, grain average diameters and densities were measured. At this time, the yttria-alumina complex oxide is a product made for comparative experiment by the applicant of the present invention.

8, the bending strength of the composite oxide according to the embodiment of the present invention was 258 MPa, the average grain size was 0.78 µm, and the density was 99.7 (g / cm ³ ). In contrast, the yttria-alumina had a bending strength of 160 MPa, a grain average diameter of 1.44 µm, and a density of 97.7 (g / cm ³ ). In other words, as shown in the photo, the composite oxide of the present invention has a grain size of about 1/2 smaller than that of yttria-alumina, and has a dense structure with high density. In addition, the bending strength of the yttria-alumina is about 100 MPa less than that of the composite oxide of the present invention, which means that the yttria-alumina has a phase in which the alumina is segregated (B) in the yttria matrix (A). Is caused. It was confirmed that the yttria-zirconia composite oxide of the present invention is suitable as a member of the microelectronic component manufacturing equipment.

Hereinafter, preferred embodiments of the present invention will be described in detail. However, the embodiments presented herein are not intended to limit the present invention to illustrate the present invention. Performance evaluation of the composite oxide and pure yttria prepared in the embodiment of the present invention was carried out in the following manner.

(1) bending strength (MPa)

Bending strength refers to the maximum tensile stress at the time of failure, and the three-point bending strength was measured by a universal testing machine (UTM).

(2) Thermal Shock Resistance (△ T)

Abrupt temperature distribution such as sudden heating or cooling of an object causes abnormal temperature distribution, which means that a large thermal stress or thermal deformation occurs. The result is measured by maintaining the solution at 120 ° C. for 30 minutes through an oven and then quenching it.

(3) density (%)

Density means the value calculated | required from the volume and mass calculated | required by the external dimension of a sintered compact, a mercury pycnometer, etc., and it measured using the principle of Alchemedes.

(4) grain size (㎛)

Grain size means the size of each particle, the average grain size was measured by an image analyzer.

Example of the present invention to prepare a yttria-zirconia composite oxide through sintering. By the way, pure zirconia has a phase change at about 1,000 ℃, there is a problem that the volume expands at the sintering temperature (1,500 ~ 1,700 ℃) of the present invention, it is necessary to stabilize the zirconia by mixing the yttria in the zirconia powder . In the embodiment of the present invention, the content of the yttria included in the zirconia powder is preferably greater than 0 mol% and less than 10 mol%, and in the embodiment of the present invention, yttria stabilized zirconia (YSZ) commonly sold Was used. The YSZ does not expand in volume at the sintering temperature (1,500 ~ 1,700 ℃) of the present invention, the weight% (wt%) of zirconia in the embodiment of the present invention was determined in consideration of the amount of the YSZ. Commonly marketed YSZ include 3YSZ, 5YSZ and 8YSZ comprising 3mol%, 5mol% and 8mol% yttria.

The content of zirconia in the yttria-zirconia composite oxide according to the embodiment of the present invention can be grasped under the following three employment conditions. At this time, the etching rate of the yttria-zirconia composite oxide was 100mTorr in the chamber, the plasma power was 800W, the etching time was 800 minutes, the etching gas was CF ₄ 54sccm and O ₂ 5sccm. It is larger than 0.28 and smaller than 0.31.

As the first employing condition, when a composite oxide having superior bending strength, etching resistance and density is required than a conventional member, the zirconia content is preferably 5wt% to 35wt%. At this time, when the content of zirconia is less than 5wt%, the bending strength is remarkably dropped, and if it is greater than 35wt%, the density is sharply lowered. In this case, the yttria-zirconia composite oxide has a bending strength of 250 to 260 MPa, an average grain size of 0.70 µm to 1.60 µm, and additionally a density of 99.5 to 99.8 (g / cm ³ ).

As the second employing condition, when a composite oxide having superior bending strength, etching resistance, and density than the first employing condition is required, the zirconia content is preferably 8wt% to 15wt%. Within this range of content has a high bending strength, etching resistance and density compared to the first use conditions. At this time, the yttria-zirconia composite oxide has a bending strength of 255 to 260 MPa, a grain average diameter of 0.70 µm to 0.80 µm, and additionally a density of 99.7 to 99.8 (g / cm ³ ).

As the third employing condition, the bending strength and the etching resistance are lower than the above first employing condition, but higher than the conventional member, and the density is inferior to the conventional member. In this case, the zirconia content is preferably 35wt% to 55wt%. If the zirconia content is less than 35wt%, it corresponds to the first employing condition, and if the zirconia content is greater than 55wt%, the bending strength and the etching resistance may not be superior to those of the conventional member.

Accordingly, the content of zirconia in the yttria-zirconia composite oxide of the present invention is preferably 5wt% to 55wt%. However, depending on the environment in which the microelectronic component manufacturing equipment is used, its content may vary depending on the above employment conditions. However, in view of bending strength, etching resistance and density, the content of zirconia is preferably 5 wt% to 35 wt%, and more preferably 8 wt% to 15 wt%.

≪ Example 1 >

90 wt% of yttria powder having an average particle diameter of 0.75 μm and 10 wt% of zirconia powder having an average particle diameter of 0.6 μm were prepared by spray drying, and then a molded body was manufactured by cold hydrostatic equipment and sintered at 1700 ° C., and then sintered yttria- The bending strength, thermal shock resistance, density and grain size of the zirconia sintered body were measured.

<Example 2>

Under the same conditions as in Example 1 except that the zirconia powder was 20 wt%, the bending strength, the thermal shock resistance, the density, and the grain size of the sintered body were measured.

<Example 3>

Under the same conditions as in Example 1 except that the zirconia powder was 30 wt%, the bending strength, the thermal shock resistance, the density, and the grain size of the sintered body were measured.

<Example 4>

Under the same conditions as in Example 1 except that the zirconia powder was 40 wt%, the bending strength, thermal shock resistance, density, and grain size of the sintered body were measured.

&Lt; Example 5 >

Under the same conditions as in Example 1 except that the zirconia powder was 50 wt%, the bending strength, the thermal shock resistance, the density, and the grain size of the sintered body were measured.

&Lt; Comparative Example 1 &

After forming granules by spray drying the pure yttria powder having an average particle diameter of 0.75 μm, a molded body was manufactured by cold hydrostatic pressure equipment, and the bending strength, thermal shock resistance, density and grain size of the pure yttria sintered body sintered at 1700 ° C. were measured.

Comparative Example 2

90 wt% of yttria powder having an average particle diameter of 0.75 μm and 10 wt% of alumina powder having an average particle diameter of 0.6 μm were manufactured by granulation through spray drying, and then a molded body was manufactured by cold hydrostatic pressure equipment and sintered at 1700 ° C. Thereafter, the bending strength, thermal shock resistance, density and grain size of the sintered yttria-alumina sintered body were measured.

Table 1 shows the bending strength, thermal shock resistance, density and grain size of the examples and comparative examples of the present invention. Since the manufacturing equipment of the microelectronic component to which the present invention is applied is a plasma environment, bending strength, thermal shock resistance, and etching resistance are important properties. In addition, in order to prevent the member from becoming brittle due to unexpected impact, the density of the microstructure was incidentally confirmed using the density and the grain size.

division Bending strength
(MPa) Thermal shock
Resistance (△ T) density
(%) Crystal grain
Size (㎛) Example 1 258 200 99.7 0.78 Example 2 255 200 99.6 1.14 Example 3 252 200 99.6 1.53 Example 4 215 200 97.4 2.69 Example 5 204 200 95.6 3.92 Comparative Example 1 150 200 98.4 1.42 Comparative Example 2 160 200 97.7 1.44

According to Table 1, the etching rate of the composite oxide of the embodiment of the present invention is significantly lower than alumina and similar to pure yttria, as described with reference to FIG. 7A. Accordingly, the description of the etching rate of the embodiment and the comparative example can be based on Figure 7a. In addition, since the thermal shock resistance ΔT is the same in both the above examples and the comparative example, neither the thermal stress nor the thermal shock occurs due to the shocking temperature change in both the comparative example and the example. However, Examples and Comparative Examples of the present invention shows a difference in bending strength, density, grain size.

Hereinafter, the above difference will be described in consideration of the employment conditions 1 to 3 described above. Specifically, the employing condition 1 corresponds to Examples 1 to 3 with a zirconia content of 5wt% to 35wt%, the employing condition 2 corresponds to Example 1 with a zirconia content of 8wt% to 15wt%, employing condition 3 The zirconia content ranges from 35 wt% to 55 wt%, corresponding to Examples 4 and 5.

First, in Examples 1 to 3 belonging to the employing condition 1, the bending strength was found to be about 258 MPa, 255 MPa, and 252 MPa, respectively, about 100 MPa larger than 150 MPa and 160 MPa of Comparative Examples 1 and 2. In addition, the densities of Examples 1 to 3 were 99.7%, 99.6 %%, and 99.6%, respectively, higher than 98.4% and 97.7% of the comparative examples. However, the grain size of Examples 1 and 2 was smaller than the comparative examples, it was confirmed that in Example 3 is larger than the comparative examples. On the other hand, looking at the embodiments of the present invention, the smaller the grain size showed a tendency to increase the bending strength. This shows that the bending strength of Examples 1 to 3 depends on the distorted cubic system of FIG. 5 in which yttria and zirconia form a solid solution, but the bending strength rises constantly even when the grain size is reduced.

However, regardless of the grain size, the densities of Examples 1 to 3 were larger than those of Comparative Examples 1 and 2 and showed almost constant values. That is, it was found that in the employment condition 1, the grain size did not significantly affect the density. In particular, Example 1 of Employment Condition 2 included in Employment Condition 1 was the most preferable example of the yttria-zirconia composite oxide having plasma corrosion resistance in terms of bending strength, density, and grain size. Accordingly, Examples 1 to 3 corresponding to the employment conditions 1 and 2 of the present invention were superior in the pure yttria and alumina-yttria of the conventional members in bending strength, etching resistance and density.

By the way, in Examples 4 and 5 corresponding to the employment conditions 3, the bending strength was higher than that of the comparative examples, but the density was inferior. In other words, considering the etching resistance of FIG. 7A together, the composite oxide of the present invention having a zirconia content of 35wt% to 55wt% has a significantly higher etching resistance than alumina and a bending strength of the pure yttria and alumina-yttria composites. At least 40 MPa in comparison. It was found that the composite oxides of Examples 4 and 5 of the present invention, although the densities were lower than those of Comparative Examples 1 and 2, were excellent in bending strength and etching resistance. Accordingly, the composite oxides of Examples 4 and 5 of the present invention can also be used as microelectronic components of devices requiring plasma corrosion resistance.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but many variations and modifications may be made without departing from the scope of the present invention. It is possible. For example, an embodiment of the present invention forms a complex oxide of yttria-zirconia using yttria and zirconia in powder form, but within the scope of the present invention, the complex oxide is formed by other forms of yttria and zirconia. It may be formed.

Claims (10)

Yttria and zirconia content of 95 ~ 45wt%: 5 ~ 55wt%, when the yttria and zirconia are sintered, the yttria and zirconia are solid solution, characterized in that the corrosion resistance to the plasma Tria-zirconia composite oxide. The yttria-zirconia composite oxide having corrosion resistance to plasma according to claim 1, wherein the zirconia content is 8-15 wt%. The yttria-zirconia composite oxide of claim 1, wherein the zirconia comprises yttria, and the content of the yttria included is greater than 0 mol% and less than 10 mol%. The yttria-zirconia composite oxide of claim 1, wherein the yttria-zirconia composite oxide has both etching resistance to the plasma of yttria and mechanical strength of zirconia. The yttria-zirconia composite oxide of claim 1, wherein the yttria-zirconia composite oxide has a cubic structure having an interplanar angle of about 3 degrees. The yttria-zirconia composite oxide of claim 1, wherein the yttria-zirconia composite oxide is used as a member of a microelectronic component manufacturing apparatus. The etching rate of the yttria-zirconia composite oxide is 100mTorr, plasma power 800W, etching time 800 minutes, the etching gas is CF ₄ 54sccm and O ₂ 5sccm, the alumina Yttria-zirconia composite oxide having corrosion resistance to a plasma, characterized in that greater than 0.28, less than 0.31. The yttria-zirconia composite oxide of claim 1, wherein the yttria-zirconia composite oxide has a bending strength of 250 to 260 MPa. The yttria-zirconia composite oxide having corrosion resistance to plasma according to claim 1, wherein the yttria-zirconia composite oxide has a grain size of 0.70 µm to 1.60 µm. The yttria-zirconia composite oxide having corrosion resistance to plasma according to claim 1, wherein the yttria-zirconia composite oxide has a density of 99.7 to 99.9 (g / cm ³ ).

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