KR20140030284A - White light emitting device - Google Patents

Abstract

The present invention provides a white light-emitting device. The invention includes an organic material layer located between a positive electrode and a negative electrode. The organic material layer includes a green light-emitting layer, a blue light-emitting layer and a red light-emitting layer. A charge generating layer is located between the light-emitting layers. The white light-emitting device has the simplest tandem structure among green light-emitting device, blue light-emitting device and red light-emitting device. Therefore, the white light-emitting device has a simple manufacturing process, high color purity and enhanced light-emitting efficiency. [Reference numerals] (AA) Red light-emitting layer; (BB) Blue light-emitting layer; (CC) Charge generating layer; (DD) Green light-emitting layer

Description

[0001] The present invention relates to a white light emitting device,

The present invention relates to a white organic light emitting device, and more particularly, to a white organic light emitting device having a simple manufacturing process, excellent color purity, and improved light emitting efficiency.

The organic light emitting element using electroluminescence has excellent impact resistance since it is a self-emitting element having high recognition performance and being completely solid. Therefore, the use of a light emitting element in various display apparatuses has been attracting attention.

The structure of the organic light emitting device is based on the configuration of the anode / organic light emitting layer / cathode, and can be appropriately provided with a hole injection layer, a hole transport layer, an electron injection layer, for example, an anode / hole injection layer / hole transport layer The structure of / organic light emitting layer / cathode, or anode / hole injection layer / hole transporting layer / organic light emitting layer / electron injection layer / cathode is known.

BACKGROUND ART [0002] In recent years, organic light emitting devices for displays have been actively developed, and particularly focusing on the development of white light emitting devices.

The white organic light emitting device is an organic light emitting device that emits white light and can be used for various purposes such as a paper-thin light source, a backlight of a liquid crystal display device, or a full color display device employing a color filter .

A method of manufacturing a white organic light emitting device includes a method of manufacturing a light emitting layer as a single layer and a method of manufacturing a plurality of layers.

The method of manufacturing the light emitting layer as a single layer may use a single material or a method of doping or blending two or more kinds of materials to produce a white organic light emitting device. For example, there is a method of using red and green dopants for a blue host or adding red, green, and blue dopants to a host material having a large band gap energy, but there is a problem in that energy transfer to the dopant is incomplete. In addition, there is a method using a bipolar host material having red, green or blue light emitting moieties, but there is a problem in that it is not easy to control white balance.

The method of manufacturing the light emitting layer in a plurality of layers includes a three-wavelength white organic light emitting device structure having a structure in which red, green, and blue light emitting layers are stacked, and a two- Can be divided.

In the case of a two-wavelength white organic light emitting device using a complementary color relationship, although the advantage of high efficiency is obtained, white color is obtained by using a complementary color relation, and thus a disadvantage . On the other hand, the three-wavelength type white light emitting device has a disadvantage in that it is difficult to obtain a uniform spectrum of three colors because of the intermolecular energy transfer and the luminous efficiency is still poor.

Korean Patent Application Laid-Open No. 2005-0028564 discloses a method of doping a part of or all of a hole transporting layer and an electron transporting layer located at the top and bottom of a blue light emitting layer with either green or red dye, And doping a green or red coloring matter with a color different from that of the white coloring organic light emitting element. In Japanese Patent Application Laid-Open No. 2005-150084, a double hole blocking layer composed of a first hole blocking layer, a hole transporting layer, and a second hole blocking layer is formed between an anode and a light emitting layer to form green, Discloses an organic light emitting device capable of obtaining white light emission with high color purity and high luminance even in a laminated structure of a red light emitting layer sequence. However, the white organic light emitting device manufactured in this way is simple in manufacturing process, but still has a low luminous efficiency and low color purity.

United States Patent Application Publication No. 20030189401 to IMES (International Manufacturing and Engineering Services, Co., Ltd.) includes at least two light emitting units having at least one light emitting layer between a cathode and an anode, A white organic light emitting device having a structure divided from each other by one charge generating layer is disclosed. This is a tandem organic light emitting device in which a charge generating layer (CGL) is introduced between each light emitting unit, as shown in FIG. 1A. There is a disadvantage that color control is difficult due to the overall light interference effect.

U.S. Patent Application Publication No. 2006-0040132 discloses that a plurality of light emitting units exist between a cathode and an anode, and a connector is located between adjacent light emitting units, and each of the light emitting units includes a tandem white organic light emitting device . This has the structure as shown in FIG. 1B, which is excellent in efficiency, has a complicated manufacturing process, and has a problem in that it is difficult to adjust the color due to a long optical path.

Accordingly, the present invention has been made to solve the above-mentioned problems, and it is an object of the present invention to provide a white organic light emitting device having a simplest tandem structure, easy color control, and excellent luminous efficiency.

In order to achieve the above object,

A white organic light emitting device comprising an anode, a cathode, and an organic layer disposed between the anode and the cathode, wherein the organic layer includes one green, blue and red light emitting layers, and one charge generating layer is located between the light emitting layers And a white organic light emitting device.

According to an embodiment of the present invention, the charge generating layer may be an arylamine-based organic compound, a metal, an oxide of an oxide of metal, a carbide, a fluoride, or a mixture thereof.

According to another embodiment of the present invention, the green, blue, and red light emitting layers may include a host material and a fluorescent or phosphorescent material dopant.

The white organic light emitting device of the present invention can improve the color balance and the light emitting efficiency simultaneously in a simple tandem structure, and can be effectively used in displays and lighting devices.

1 is a schematic cross-sectional view showing a laminated structure of a light emitting layer of a tandem structured white organic light emitting device according to the prior art.
2 is a schematic cross-sectional view illustrating a laminated structure of a light emitting layer of a tandem structured white organic light emitting diode according to an embodiment of the present invention.
3 is a view showing color coordinates of a white organic light emitting diode according to an embodiment and a comparative example of the present invention.

Hereinafter, the present invention will be described in more detail.

In the present invention, by positioning one charge generation layer between the light emitting layers in a white organic light emitting device having a tandem structure, it is possible to obtain a white organic light emitting device having a simple manufacturing process and excellent color purity and luminous efficiency.

That is, in the present invention, a white organic light emitting device comprising a cathode, an anode, and an organic layer disposed between the anode and the cathode, wherein the organic layer includes one green, blue and red light emitting layers, And the charge generation layer is located.

The white organic light emitting device according to the present invention is excellent in color purity even when the green, blue, and red light emitting layers are laminated or the light emitting efficiency is excellent or equal to that of the case where the charge generating layers are disposed between the light emitting layers.

In the organic light emitting device according to the present invention, one green, blue, and red light emitting layers may be stacked in any order, and the charge generating layer may be located anywhere between the light emitting layers. However, It is most preferable that the charge generation layer is disposed between the green light emitting layer and the blue light emitting layer and the blue light emitting layer and the green light emitting layer are laminated in this order from the anode to the blue light emitting layer and the red light emitting layer, The charge generating layer may be located between the light emitting layers.

In the white organic light emitting device according to the present invention, since there is only one charge generating layer, the asymmetric structure in which the charge generating layer is located between one light emitting layer and two light emitting layers is obtained.

The charge generation layer is a layer existing between a structure in which one kind of light emitting layers are connected in series, and two light emitting layers connected to the charge generation layer doubles the current efficiency generated in one light emitting layer . For example, it is known that the n-type arylamine-based layer and the p-type metal oxide layer constituting the charge generation layer act to generate a charge by generating a complex due to oxidation-reduction reaction when a voltage is applied.

The charge generating layer may include a charge generating compound composed of an arylamine-based organic compound, a metal, an oxide of an oxide of a metal, a carbide, a fluoride, or a mixture thereof.

Examples of the arylamine-based organic compound include? -NPD, 2-TNATA, TDATA, MTDATA, spiro-TAD and sprio-NPB.

Examples of the metal include Cs, Mo, V, Ti, W, Ba, and Li.

Examples of the oxides, carbides, and fluorides of the metal include Re ₂ O ₇ , MoO ₃ , V ₂ O ₅ , WO ₃ , TiO ₂ , Cs ₂ CO ₃ , BaF, LiF, and CsF.

The light emitting layer of the white organic light emitting device according to the present invention can be formed by using a fluorescent material or a phosphorescent material as a dopant in the host material.

In this case, the host material used for the light emitting layer may be the same as the blue, red, and green light emitting layers, or the host material for the green and red light emitting layers may be different from the host material used for the blue light emitting layer.

As the host material, those which are generally used in low molecular organic light emitting devices can be used without limitation, and examples thereof include AND, TBADN and Alq ₃ .

The blue dopant to be used for the blue light emitting layer is not particularly limited and examples thereof include DPAVBi, DPAVBi derivative, distyrylarylene (DSA), distyrylarylene derivative, distyrylbenzene (DSB), distyrylbenzene derivative, spiro- -6P (spiro-sexyphenyl), and the like.

The red dopant used for the red light emitting layer is not particularly limited, and examples of the red dopant include 4- (dicyanomethylene) -2-t-butyl-6- (1,1,7,7-tetramethyljulolididyl-9- 4H-pyran (DCJTB), PtOEP, RD 61 from UDC Co., and the like. .

The green dopant used for the green light emitting layer is not particularly limited, and examples thereof include coumarin 6, Ir (PPy) 3 (PPy = 2-phenylpyridine) and the like.

The white organic light emitting device according to the present invention can be manufactured by a conventional method.

That is, a positive electrode is formed on a substrate, and one green, blue, and red light emitting layers are stacked on the anode. The charge generating layer is formed by laminating any one of the light emitting layers on an anode, .

The white organic light emitting device according to the present invention may further include a film made of an organic compound such as an electron transporting layer, a hole transporting layer, etc. in addition to the light emitting layer and the charge generating layer.

Such a white organic light emitting device typically includes an anode / a hole injecting layer / a hole transporting layer / a light emitting unit + a charge generating layer / an electron transporting layer / an electron injecting layer / a cathode, an anode / a hole transporting layer / a light emitting unit + a charge generating layer / A hole transporting layer, a light emitting unit, a charge generating layer, a hole blocking layer, an electron transporting layer, an electron injecting layer, and a cathode.

The anode is formed by a vapor deposition method, a sputtering method, or the like on the substrate with a material having a high work function. Here, as the substrate, a substrate used in a common organic light emitting device is used, and a glass substrate or a transparent plastic substrate having excellent mechanical strength, thermal stability, transparency, surface smoothness, ease of handling and waterproofness is preferable.

As the material for the positive electrode, indium tin oxide (ITO), indium zinc oxide (IZO), tin oxide (SnO ₂ ), zinc oxide (ZnO) and the like which are transparent and excellent in conductivity are used.

Next, a hole injection layer (HIL) may be formed on the anode by various methods such as a vacuum deposition method, a spin coating method, a casting method, and an LB method.

In the case of forming the hole injection layer by vacuum deposition, the deposition conditions vary depending on the compound used as the material of the hole injection layer, the structure and thermal properties of the hole injection layer, and the like. It is preferable that a vacuum degree of 10 ^-8 to 10 ^-3 torr, a deposition rate of 0.01 to 100 mW / sec, and a film thickness are usually appropriately selected in the range of 10 mV to 5 m.

When the hole injection layer is formed by the spin coating method, the coating conditions vary depending on the compound used as the material of the hole injection layer, the structure and the thermal properties of the desired hole injection layer, but the coating speed is preferably from about 2000 rpm to 5000 rpm , And the heat treatment temperature for removing the solvent after coating is suitably selected within a temperature range of about 80 캜 to 200 캜.

The hole injection layer material may include, for example, a phthalocyanine compound such as copper phthalocyanine, a starburst amine derivative TCTA, m-MTDATA, m-MTDAPB, MoO ₃ , a soluble conductive polymer such as Pani / DBSA (Polyaniline / Dodecylbenzenesulfonic acid: polyaniline / dodecylbenzenesulfonic acid) or PEDOT / PSS (poly (3,4-ethylenedioxythiophene) / poly (4-styrenesulfonate) ), Known hole injecting materials such as Pani / CSA (Polyaniline / Camphor sulfonicacid: polyaniline / camphorsulfonic acid) or PANI / PSS (Polyaniline) / Poly (4-styrenesulfonate): polyaniline) / poly Can be used.

Pani / DBSA PEDOT / PSS

The thickness of the hole injection layer may be about 100 Å to 10000 Å, preferably 100 Å to 1000 Å. If the thickness of the hole injection layer is less than 100 angstroms, the hole injection characteristics may be degraded. If the thickness of the hole injection layer exceeds 10000 angstroms, the driving voltage may increase.

Next, a hole transport layer (HTL) may be formed on the hole injection layer by various methods such as a vacuum deposition method, a spin coating method, a casting method, and an LB method. In the case of forming the hole transporting layer by the vacuum deposition method and the spin coating method, the deposition conditions and the coating conditions vary depending on the compound used, but they are generally selected from substantially the same conditions as the formation of the hole injection layer.

The hole transport layer material may be, for example, a carbazole derivative such as N-phenylcarbazole or polyvinylcarbazole, a carbazole derivative such as N, N'-bis (3-methylphenyl) -N, Having an aromatic condensed ring such as biphenyl-4,4'-diamine (TPD) and N, N'-di (naphthalene-1-yl) -N, N'-diphenylbenzidine Amine derivatives and the like can be used.

The thickness of the hole transporting layer may be about 50 Å to 1000 Å, preferably 100 Å to 600 Å. When the thickness of the hole transporting layer is less than 50 Å, the hole transporting property may be degraded. When the thickness of the hole transporting layer is more than 1000 Å, the driving voltage may increase.

Next, a light emitting layer and a charge generating layer may be formed on the hole transporting layer by a method such as a vacuum evaporation method, a spin coating method, a casting method, or an LB method. When a light emitting layer is formed by a vacuum deposition method and a spin coating method, the deposition conditions vary depending on the compound used, but generally, the conditions are substantially the same as those for forming the hole injection layer.

The thickness of the light emitting layer and the charge generating layer may be about 100 Å to about 5000 Å, and preferably about 500 Å to about 2000 Å. If the thickness is less than 100 angstroms, the luminescent characteristics may be deteriorated. If the thickness exceeds 5000 angstroms, the driving voltage may increase.

In order to prevent the triplet exciton or holes from diffusing into the electron transporting layer, a hole blocking layer (HBL) is formed on the hole transporting layer by a method such as vacuum evaporation, spin coating, casting, LB . When the hole blocking layer is formed by a vacuum deposition method or a spin coating method, the conditions vary depending on the compound to be used, but are generally selected from the same range of conditions as the formation of the hole injection layer. Known hole blocking materials which can be used, for example, oxadiazole derivatives, triazole derivatives, phenanthroline derivatives, BCP, aluminum complexes and the like.

Phenanthroline-containing organic compounds Imidazole-containing organic compounds

Triazole-containing organic compound Oxadiazole-containing compound

BAlq

The thickness of the hole blocking layer may be about 50 Å to 1000 Å, preferably 100 Å to 300 Å. This is because when the thickness of the hole blocking layer is less than 50 kV, the hole blocking property may be deteriorated. When the thickness of the hole blocking layer is more than 1000 kV, the driving voltage may increase.

Next, an electron transport layer (ETL) is formed by various methods such as a vacuum evaporation method, a spin coating method, and a casting method. In the case of forming the electron transporting layer by the vacuum deposition method and the spin coating method, the conditions vary depending on the compound used, but generally, the conditions are substantially the same as those for forming the hole injection layer. The electron transport layer material functions to stably transport the electrons injected from the cathode, and may be an oxazole compound, an isoxazole compound, a triazole compound, an isothiazole compound, an oxadiazole compound, or a thiadiazole ( thiadiazole compound, perylene compound, aluminum complex (e.g., Alq3 (tris (8-quinolinolato) -aluminum) BAlq, SAlq, Almq3, gallium complex ( For example, well-known materials, such as Gaq'2OPiv, Gaq'2OAc, 2 (Gaq'2)), etc. can also be used.

       A perylene compound

     Alq3 BAlq

    SAlq Almq3

Gaq'2OPiv Gaq'2Oac

2 (Gaq'2)

The thickness of the electron transporting layer may be about 100 ANGSTROM to 1000 ANGSTROM, preferably 200 ANGSTROM to 500 ANGSTROM. When the thickness of the electron transporting layer is less than 100 angstroms, the electron transporting characteristics may be deteriorated. When the thickness of the electron transporting layer exceeds 1000 angstroms, the driving voltage may increase.

Further, an electron injection layer (EIL), which is a material having a function of facilitating the injection of electrons from the cathode, may be laminated on the electron transport layer, which is not particularly limited.

As the electron injection layer, any material known as an electron injection layer forming material such as LiF, NaCl, CsF, Li ₂ O, BaO, CsCO ₃ and BCP mixture can be used. The deposition conditions of the electron injection layer vary depending on the compound used, but are generally selected from substantially the same range of conditions as the formation of the hole injection layer.

The thickness of the electron injection layer may be about 1 A to 100 A, preferably 5 A to 50 A. If the thickness of the electron injection layer is less than 1 angstrom, the electron injection characteristics may be deteriorated. If the thickness of the electron injection layer exceeds 100 angstroms, the driving voltage may increase.

Finally, a cathode may be formed on the electron injection layer by a vacuum evaporation method, a sputtering method, or the like. The second electrode may be used as a cathode. As the metal for forming the negative electrode, a metal, an alloy, an electrically conductive compound having a low work function, or a mixture thereof may be used. Specific examples thereof include lithium (Li), magnesium (Mg), aluminum (Al), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg-In), magnesium- . Also, a transmissive cathode using ITO or IZO may be used to obtain a front light emitting element.

The production of the white organic light emitting device of the present invention does not require a special apparatus or method and can be manufactured according to a method of manufacturing a white organic light emitting device using a conventional light emitting material.

Hereinafter, the present invention will be described with reference to the following examples, but the present invention is not limited thereto.

Example

Example 1

A white organic light emitting device having the following structure was fabricated.

_{ITO / MoO 3 / α-NDP} / 2 weight% _{coumarin: Alq 3 / Alq 3 / Cs} 2 CO 3: BCP / MoO 3 / α-NPD / 5 weight% DPAVBi: TBADN / 2 weight% DCJTB: Alq ₃ / Alq ₃ / Cs ₂ CO ₃ : BCP / Al

A substrate having ITO (indium-tin oxide) patterned at 90 nm on a glass substrate having a thickness of 0.7 mm was sequentially cleaned using a solvent such as neutral detergent, deionized water and isopropyl alcohol, followed by UV-ozone treatment. A hole injection layer (MoO ₃ ) and a hole transport layer (? -NPD) are formed on the ITO film at a deposition temperature of 100 to 1000 ° C., a vacuum degree of 10 ^-8 to 10 ^-3 torr, a deposition rate of 0.1 to 10 Å / 1000 < / RTI > (Host: Alq ₃ , dopant: coumarin) was deposited on the hole transport layer at a deposition temperature of 100 to 500 ° C, a vacuum degree of 10 ^-8 to 10 ^-3 torr, a deposition rate of 0.1 to 10 Å / sec to a thickness of 50 to 1000 Å, And the dopant was co-deposited at a ratio of 2 parts by weight per 100 parts by weight of the host. An electron transport layer (Alq ₃ ) was deposited on the green light emitting layer at a deposition temperature of 100 to 500 ° C., a vacuum degree of 10 ^-8 to 10 ^-3 torr, and a deposition rate of 0.1 to 10 Å / sec to a thickness of 50 to 1000 Å. Type charge generation layer (Cs ₂ CO ₃ : BCP, 1: 1) at a deposition temperature of 100 to 1000 ° C., a vacuum degree of 10 ^-8 to 10 ^-3 torr, a deposition rate of 0.1 to 10 Å / By co-deposition at a ratio of one to one. A p-type charge generation layer (MoO ₃ ) is deposited on the n-type charge generation layer at a deposition temperature of 100 to 1000 ° C., a degree of vacuum of 10 ^-8 to 10 ^-3 torr, a deposition rate of 0.1 to 10 Å / (Host: TBADN, dopant: DPAVBi) was added to the p-type charge generation layer in an amount of 5 parts by weight per 100 parts by weight of the host and a red light emitting layer (host: Alq ₃ , dopant: DCJTB) 5 parts by weight of dopant per 100 parts by weight of boron were sequentially co-deposited at a deposition temperature of 100 to 500 DEG C, a vacuum degree of 10 ^-8 to ^10-3 torr, and a deposition rate of 0.1 to 10 ANGSTROM / sec to a thickness of 50 to 1000 ANGSTROM. Then, an electron transport layer (Alq ₃ ) and an electron injection layer (Cs ₂ CO ₃ : BCP, 1: 1) were deposited on the red light emitting layer under the same conditions as the formation of the electron transport layer and the n-type charge generation layer. Al was deposited at a deposition temperature of 300 to 1000 占 폚, a vacuum degree of 10 ^-8 to 10 ^-3 torr, and a deposition rate of 0.1 to 10 占 / sec to a thickness of 100 to 2000 占.

Example 2

_{ITO / MoO 3 / α-NDP} / 5 _{weight% DPAVBi: TBADN / Alq 3 /} Cs 2 CO 3: BCP / MoO 3 / α-NPD / 2 weight% coumarin: Alq _3/2 weight% DCJTB: Alq ₃ / Alq ₃ / Cs ₂ CO ₃ : BCP / Al

A white organic light emitting device was prepared in the same manner as in Example 1 except that the procedure of laminating the light emitting layers was changed to a blue light emitting layer, a charge generation layer, a green light emitting layer, and a red light emitting layer.

Comparative Example 1

_{ITO / MoO 3 / α-NDP} / 2 weight% coumarin: Alq _3/5 weight% DPAVBi: TBADN / 2 _{weight% DCJTB: Alq 3 / Alq 3} / Cs 2 CO 3: BCP / Al

A white organic light emitting diode was manufactured according to the same method as Example 1 without a charge generating layer.

Comparative Example 2

_{ITO / MoO 3 / α-NDP} / 5 weight% DPAVBi: TBADN / 2 weight% coumarin: Alq _{3/2 weight% DCJTB: Alq 3 / Alq 3} / Cs 2 CO 3: BCP / Al

A white organic light emitting device was prepared in the same manner as in Example 2 without the charge generating layer.

Comparative Example 3

_{ITO / MoO 3 / α-NDP} / 2 weight% _{coumarin: Alq 3 / Alq 3 / Cs} 2 CO 3: BCP / MoO 3 / α-NPD / 5 _{weight% DPAVBi: TBADN / Cs 2 CO} 3: BCP / MoO 3 / 2 _{weight% DCJTB: Alq 3 / Alq 3} / Cs 2 CO 3: BCP / Al

A white organic light emitting device was manufactured in the same manner as in Example 1 except that the charge generating layer was laminated between the respective light emitting layers.

Comparative Example 4

_{ITO / MoO 3 / α-NDP} / 5 _{weight% DPAVBi: TBADN / Alq 3 /} Cs 2 CO 3: BCP / MoO 3 / α-NPD / 2 weight% _{coumarin: Alq 3 / Cs 2 CO 3} : BCP / MoO 3 / 2 _{weight% DCJTB: Alq 3 / Alq 3} / Cs 2 CO 3: BCP / Al

A white organic light emitting device was fabricated in the same manner as in Example 2 except that the charge generation layer was laminated between the respective light emitting layers.

evaluation

For Examples 1 and 2, and Comparative Examples 1 to 4, the maximum efficiency, color purity, and driving voltage were measured, and the measurement results thereof are shown in Table 1 below:

Characteristics of device Maximum efficiency (cd / A) The color coordinates (x, y) Turn-on Voltage (V) Example 1 8.51 0.28, 0.32 5.4 / 11.4 Example 2 6.75 0.32, 0.32 3.8 / 13.0 Comparative Example 1 7.38 0.29, 0.39 2.8 / 6.2 Comparative Example 2 6.33 0.38, 0.40 3.0 / 6.8 Comparative Example 3 9.08 0.26, 0.40 8.2 / 19.2 Comparative Example 4 12.01 0.27, 0.38 9.0 / 19.0

3 is a light emission spectrum of the white organic light emitting diode according to Examples 1 and 2 and Comparative Examples 1 to 4 of the present invention.

As can be seen from the above results, the white organic light emitting device of the present invention, in which one charge generating layer is located between one green, blue and red light emitting layers, is a white organic light emitting device including green, blue, and red light emitting layers It can be seen that the light emitting efficiency is higher than that of the light emitting device or the color purity is excellent while maintaining the same level.

In addition, as shown in the above results, the white organic light emitting device of the present invention in which one charge generating layer is positioned between one green, blue and red light emitting layer, respectively, has a white organic light emitting layer in which the charge generating layer is present between green, blue and red light emitting layers, respectively. It can be seen that the luminous efficiency is lower than that of the light emitting device, but the color purity and the driving voltage are excellent.

Claims (14)

anode; A hole injection layer on the positive electrode; A hole transport layer on the hole injection layer; A first light emitting layer on the hole transport layer; An electron transport layer on the first light emitting layer; A charge generating layer on the electron transport layer; A second light emitting layer on the charge generating layer; A third light emitting layer on the second light emitting layer; An electron transport layer on the third light emitting layer; An electron injection layer on the electron transport layer; And a cathode on the electron injection layer, wherein the first, second, and third light emitting layers are one green light emitting layer, one blue light emitting layer, and one red light emitting layer, and the charge generating layer comprises: an n-type charge generating layer; White organic light emitting device comprising a p-type charge generating layer. The white organic light emitting diode of claim 1, wherein the charge generating layer comprises an aryl amine-based organic compound, a metal, an oxide of a metal, a carbide, a fluoride, or a mixture thereof. The white organic light emitting diode of claim 2, wherein the arylamine-based organic compound is α-NPD, 2-TNATA, TDATA, MTDATA, spiro-TAD, or sprio-NPB. The white organic light emitting diode of claim 2, wherein the metal is Cs, Mo, V, Ti, W, Ba, or Li. 3. The method of claim 2, wherein the oxides, carbides and fluorides of the metal are Re ₂ O ₇ , MoO ₃ , V ₂ O ₅ , WO ₃ , TiO ₂ , Cs ₂ CO ₃ , BaF, LiF or CsF Organic light emitting device. The white organic light emitting device according to claim 1, wherein the green, blue and red light emitting layers each comprise a host material and a fluorescent or phosphorescent material dopant. The white organic light emitting device according to claim 1, wherein the light emitting layers are sequentially arranged in order of green, blue, and red from the anode. The white organic light emitting device according to claim 7, wherein a charge generating layer is disposed between the green and blue light emitting layers. The white organic light emitting device according to claim 1, wherein the light emitting layers are sequentially arranged in order of blue, green, and red from the anode. The white organic light emitting device according to claim 9, wherein a charge generating layer is disposed between the blue and green light emitting layers. The white organic light emitting device according to claim 6, wherein the green light emitting layer contains Alq ₃ as a host material and coumarin as a light emitting material dopant. The white organic light emitting device according to claim 6, wherein the blue light emitting layer comprises TBADN as a host material and DPAVBi as a light emitting material dopant. The white organic light emitting device according to claim 6, wherein the red light emitting layer contains Alq ₃ as a host material and DCJTB as a light emitting material dopant. The white organic light emitting device according to claim 1, further comprising one or more layers of an electron blocking layer and a hole blocking layer between the anode and the cathode.

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