KR20140026724A - Method for manufacturing thin film and processing substrate - Google Patents

Abstract

One embodiment of the present invention includes a process of loading a substrate into a chamber, a process of maintaining and changing pressure and temperature to process pressure and process temperature in the chamber, a process of forming an oxide layer by injecting a raw material including TEOS gas, oxygen containing gas, nitrogen containing gas to the substrate in the chamber. The process temperature is maintained in a range of 80°C - 300°C. The supply ratio of the raw material which is supplied into the chamber is controlled to deposit the oxide layer. Also, the supply ratio of the raw material is ′TEOS gas flux′ : ′oxygen containing gas flux′ : ′nitrogen containing gas flux′ = ′1′ : ′150′ : ′10~100′. [Reference numerals] (AA) Start; (BB) End; (S21) Loading a substrate into a chamber; (S22) Maintaining to process pressure and process temperature in the chamber; (S23) Forming an oxide layer by injecting TEOS gas, oxygen containing gas, and nitrogen containing gas

Description

Thin film manufacturing method and substrate processing apparatus {Method for manufacturing thin film and processing substrate}

The present invention relates to a method for producing a thin film and a substrate processing apparatus for producing such a thin film, and a method and a plate processing apparatus for producing a thin film using TEOS at low temperature.

In recent years, the line width of semiconductor devices has been miniaturized (100 nm or less), and the application of a uniform composite film and high step coverage characteristics have been required as the size of semiconductor substrates and the size and thickness of thin film stacks are increased. In particular, as the degree of integration of semiconductor devices increases and the design rules of patterns become smaller, composite film deposition techniques for electrical insulation between fine patterns of devices are becoming important.

For example, in order to fabricate a nanoscale MOSFET, it is necessary to have a line pattern having a very small line width. To implement such line patterns, a line pattern is etched using a hard mask. However, as the hard mask, an oxide film using TEOS (TetraEthyl OrthoSilane; Si (OH ₅ C ₂ ) ₄ ) gas is stacked on the substrate to be used as an insulating film.

Therefore, such oxide films are widely used in gate oxide films, gate sidewall spacers, interlayer insulating films, and the like. The oxide film is an oxide film deposited using TEOS (TetraEthyl OrthoSilicate) gas as a source gas, and is mainly deposited by plasma enhanced CVD (PECVD). That is, the vaporized TEOS gas and oxygen are introduced into the process chamber loaded with the substrate, and the substrate is heated to a predetermined temperature or more to form a silicon oxide film while generating a reaction on the substrate surface. PECVD (Plasma Enhanced CVD) using plasma is used to more easily produce high quality oxide film using TEOS gas. After the oxygen and vaporized TEOS gas is flowed into the process chamber, a plasma is generated inside the chamber, and the introduced gas is activated by the plasma to grow an oxide film on the substrate. For example, U.S. Patent No. 5,362,526 discloses a technique for forming an oxide film (SiO ₂ ) by PECVD using TEOS gas.

However, even if TEOS gas is used as a raw material and an oxide film is manufactured using plasma, there is still a problem in that the thin film formation temperature range is limited. In other words, the film quality of the thin film is poor at the temperature below 300 ℃, it is difficult to use in the actual device, and at the temperature above 400 ℃ re-reaction of the decomposed TEOS gas occurs to adversely affect the thin film properties after the process is finished or particles There is a problem that is caused. Therefore, there is a problem in that the process conditions of depositing an oxide film using TEOS gas within a limited temperature range from 300 ° C to 400 ° C are cumbersome. If the deposition is made out of such a temperature range, there is a problem that the film quality deterioration occurs. That is, since the density of the film decreases as the process temperature is lowered out of the process temperature range that is standardized at a temperature of 300 ° C to 400 ° C, the electrical properties such as the breakdown voltage of the film and the hardness of the oxide film ( Mechanical properties such as Hardness and Oxidation Modulus (Modulus) result in a decrease in properties.

U.S. Patent No. 5,362,526

An object of the present invention is to produce an oxide film at a low temperature. In addition, the technical problem of the present invention is to improve the film quality by improving the density of the oxide film. Another object of the present invention is to provide process conditions for improving the density of the oxide film.

An embodiment of the present invention provides a process for loading a substrate into a chamber, maintaining a temperature and pressure in the chamber at a process temperature and a process pressure, and maintaining a raw material including a TEOS gas, an oxygen-containing gas, and a nitrogen-containing gas. Forming an oxide film by spraying the substrate in the chamber, maintaining the process temperature in a range of 80 ° C. to 300 ° C., and controlling the ratio of the supply amount of the raw material introduced into the chamber to deposit the oxide film. In addition, the ratio of the supply amount of the raw material has a ratio of [TEOS gas flow rate]: [oxygen-containing gas flow rate]: [nitrogen-containing gas flow rate] = [1]: [150]: [10 ~ 100].

Further, the raw material injected into the chamber is excited in a plasma state, or the raw material is excited in a plasma state from a remote location and then injected into the chamber.

In addition, the substrate processing apparatus according to the embodiment of the present invention includes a chamber having an internal space in which the substrate is processed, an exhaust line connected to the internal space of the chamber, a substrate support for supporting the substrate in the internal space, the substrate support and A raw material supply line connected to the gas injection unit spaced apart from each other, the raw material supply line connected to the gas injection unit, and provided for each raw material including TEOS gas, oxygen-containing gas, and nitrogen-containing gas; and a process temperature in the chamber at 80 ° C. It includes a heating unit to maintain in the range ~ ~ 300 ℃, and a flow rate adjusting unit for adjusting the ratio of the supply amount of the raw material material supplied to the raw material supply line.

In addition, the ratio of the supply amount of the raw material supplied to the raw material supply line is [TEOS gas flow rate]: [oxygen-containing gas flow rate]: [nitrogen-containing gas flow rate] = [1]: [150]: [10 ~ 100] ratio Each through the flow rate adjustment to be adjusted individually.

In addition, the heating unit includes a heater installed inside the substrate support.

According to the embodiment of the present invention, by supplying nitrogen-containing gas together, the density of the oxide film can be improved. In addition, according to an embodiment of the present invention by depositing the oxide film in a low temperature process of less than 300 ℃, it is possible to deposit the oxide film in various low temperature range. In addition, according to an embodiment of the present invention, by providing various process conditions, the film quality of the deposited oxide film can be improved.

1 is a diagram illustrating a configuration of a substrate processing apparatus according to an embodiment of the present invention.
2 is a flowchart illustrating a process of manufacturing an oxide film according to an embodiment of the present invention.
3 is a graph measuring the wet rate of an oxide film when the oxide film is deposited while varying the flow rate ratio of [N ₂ O / O ₂ ] according to an embodiment of the present invention.
Figure 4 is a graph measuring the hardness when the oxide film is deposited while varying the flow rate ratio of N ₂ O / O ₂ in accordance with an embodiment of the present invention.
5 is a graph showing the magnitude of the breakdown voltage according to the flow rate ratio of N ₂ O ₂ in accordance with an embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. It will be apparent to those skilled in the art that the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, It is provided to let you know. Wherein like reference numerals refer to like elements throughout.

1 is a diagram illustrating a configuration of a substrate processing apparatus according to an embodiment of the present invention.

The chamber 10 includes a main body 12 having an open top and a top lead 11 which is openably and closably provided on the top of the main body 12. [ When the top lid 11 is coupled to the upper portion of the main body 12 to close the inside of the main body 12, an internal space in which the processing for the substrate S is performed, for example, a deposition process, is formed inside the chamber 10. do. Since the inner space should generally be formed in a vacuum atmosphere, an exhaust port for discharging gas existing in the inner space is formed at a predetermined position of the chamber 10, and the exhaust port is connected to an exhaust line connected to the pump 40 provided outside. Connected with 50. The bottom surface of the main body 12 is formed with a through hole into which the rotation shaft of the substrate support part 30 to be described later is inserted. A gate valve (not shown) is formed on the side wall of the main body 12 to carry the substrate S into or out of the chamber 10.

The heating unit (not shown) is a heating means for maintaining the inside of the chamber at a constant temperature. In the embodiment of the present invention, when the oxide film is formed on the substrate by using the TEOS gas, the oxygen-containing gas, and the nitrogen-containing gas, the heating unit is driven to maintain the temperature inside the chamber in the range of 80 ° C to 300 ° C. For this purpose, the heating section may be formed inside the chamber wall or the substrate support. When the heating portion is formed on the chamber wall, a heating means such as a heating jacket serving as the heating portion may be formed in the chamber inner wall, the outer wall, or the wall to maintain the chamber at a constant temperature. In addition, the heating unit may be implemented as a heater installed inside the substrate support unit, by controlling the driving of the heater inside the substrate support, it is possible to maintain the temperature inside the chamber in a desired low temperature range.

The substrate support part 30 is a structure for supporting the board | substrate S of a silicon wafer, and is provided with the support plate 31 and the rotating shaft 32. As shown in FIG. Support plate 31 is provided in a horizontal direction in the chamber 10 in the shape of a disk, the rotating shaft 32 is connected to the bottom of the support plate 31 vertically. The rotating shaft 32 is connected to a lifting mechanism (not shown) such as an external motor through a through hole to lift and rotate the support plate 31. The lifting mechanism raises and lowers the support plate 31 to a desired position so as to adjust the gap between the gas injection portion and the substrate. At this time, it is preferable that the elevating mechanism controls the elevating drive so as to maintain the distance between the gas injection portion and the substrate within 7 mm to 15 mm. If the distance between the gas injector and the substrate is too narrow, it is difficult to form the desired thin film, while if the distance is too long, there may be waste of the process gas.

In addition, a heater (not shown) is provided below or inside the support plate 31 to heat the substrate S to a constant process temperature. In the embodiment of the present invention, when the oxide film is formed on the substrate by using a TEOS gas, an oxygen-containing gas, and a nitrogen-containing gas, a temperature of the chamber inside is maintained at 80 ° C to 300 ° C by driving a heater.

The gas injection unit 20 is provided to be spaced apart from the upper portion of the substrate support 30, and injects a process gas such as a gaseous raw material or a carrier gas toward the substrate support 30. The gas injection unit 20 is a shower head type, and different types of gases introduced from the outside are mixed and spray these gases toward the substrate S. Of course, in addition to the shower head type, various types of injectors such as an injector and a nozzle may be used as the gas injection portion.

In addition, the gas injection unit 20 is connected to a raw material supply source 70 and a raw material supply line 80 for supplying various process gases. Raw material is provided on the raw material supply source 70 for supplying the raw material, the raw material supply line 80 and the raw material supply line 80 connected between the raw material supply source 70 and the gas injection unit 20 It includes a valve 90 that is a flow control unit (MFC; Mass Flow Controller) for controlling the supply of. The raw material supply source 70 stores a gaseous raw material or a liquid raw material, and when the liquid raw material is stored, further includes a vaporization means 99 for receiving a liquid raw material and vaporizing it. At this time, the vaporizing means can use a vaporizer or a bubbler, which is a general means, and thus a detailed description thereof will be omitted. In addition, a carrier gas supply means for storing and supplying a carrier gas such as helium (He), the carrier gas supply means includes a carrier gas supply source 74 and a carrier gas control valve 94. The carrier gas is an auxiliary gas that carries the vaporized TEOS gas into the chamber.

The raw material supply source 70 and the raw material supply line 80 are provided separately for each raw material. In order to deposit an oxide film, an embodiment of the present invention uses a TEOS gas, an oxygen-containing gas, or a nitrogen-containing gas as a raw material. The TEOS raw material supply source 71 for supplying the TEOS gas is connected to the TEOS supply line 81 to supply TEOS gas to the gas injection unit 20 under the control of the first valve 91, which is a flow rate control unit, and contains oxygen. The oxygen-containing raw material supply source 72 for supplying gas is connected to the oxygen-containing gas supply line 82 to supply the oxygen-containing gas to the gas injection unit 20 under the control of the second valve 92, which is a flow rate control unit. , The nitrogen-containing raw material supply source 73 for supplying the nitrogen-containing gas is connected to the nitrogen-containing gas supply line 83 to supply the nitrogen-containing gas to the gas injection unit under the control of the third valve 83, which is a flow rate control unit. . Meanwhile, the TEOS gas supply line 81, the oxygen-containing gas supply line 82, and the nitrogen-containing gas supply line 83 are connected to the gas injection unit 20 to supply gas, respectively, but the gas injection unit Connected in the form of one line to can be implemented to supply gas together.

For reference, TEOS gas is an abbreviation of Tetra Ethyl Ortho Silicate and refers to a material used as a silicon (Si) source when depositing an oxide film. Oxygen (O) and carbon atom (C) It is attached form. The oxygen-containing gas may be O ₂ or the like, and the nitrogen-containing gas may be N ₂ O, NO, N _2, or the like.

In the chamber, the TEOS gas, the oxygen-containing gas, and the nitrogen-containing gas react to form an oxide film, which can be formed as a dense film by additionally reacting with a nitrogen-containing gas as well.

In addition to the conventional reaction of the oxygen-containing gas to the TEOS gas, the present invention further adds a nitrogen-containing gas to allow nitrogen (N) to be deposited at the interface between the substrate and the oxide film, thereby further improving the compactness of the oxide film. Since the substrate is made of silicon (Si), and the oxide film is made of silicon dioxide (SiO ₂ ), nitrogen atoms (N) are deposited at the Si / SiO ₂ interface. The deposition of nitrogen (N) at the Si / SiO ₂ interface can alleviate the instability of the interface and obtain a denser oxide film than the thin film growth. In addition, the difference in chemical bonding between the interface and the surface portion of the Si / SiO ₂ layer is reduced, which may stabilize the silicon (Si) bond in the oxide film under the influence of nitrogen (N).

When the TEOS gas is introduced into the chamber, the carrier gas of helium (He) is also introduced. The ratio of the TEOS gas and the carrier gas is preferably 1:20. For example, when 100 [sccm] of TEOS gas is introduced, the carrier gas controls 2000 [sccm] to be introduced.

When the temperature inside the chamber is kept at a low temperature in the range of 80 ° C to 300 ° C, the ratio of the supply amount of the raw material flowing into the chamber is [TEOS gas flow rate]: [oxygen-containing gas flow rate]: [nitrogen-containing gas flow rate] = [1]: [150]: preferably having [10] to [100]. When having such a raw material feed rate ratio, it is possible to improve the density of the film at low temperatures. Therefore, when the TEOS gas is introduced into 100 [sccm], the oxygen-containing gas is introduced into 15000 [sccm], the nitrogen-containing gas is preferably introduced into 1000 [sccm] ~ 10000 [sccm]. At this time, the distance between the substrate and the gas injection unit is preferably maintained at 7mm.

The chamber 10 may further include a plasma generator. In order to generate plasma in the chamber to excite various process gases to make the active species, a plasma generator may be provided. For example, the power supply means 60 is connected to the gas injection unit 20. From this, RF (Radio Frequency) power is applied to the gas injection part 20 on the substrate of the chamber 10 and the substrate support part is grounded, thereby accumulating electricity to excite the plasma by using RF power in an internal space which is a deposition space in the chamber. It can be driven in a Capacitively Coupled Plasma (CCP) manner. The method of using the plasma for the thin film has an advantage that the reactive gas can be easily activated even at a low temperature, and a high quality thin film can be formed by applying less energy at a high temperature. Wherein the RF power can use at least one of a high frequency RF power and a low frequency RF power. That is, both the high-frequency RF power and the low-frequency RF power may be applied to the showerhead, or may be applied alone. Here, the frequency band of the high frequency RF power is about 3 ~ 30MHz, the frequency band of the low frequency RF power is about 30 ~ 3000KHz, for example, a high frequency RF power of 13.56MHz frequency and a low frequency RF power of 400KHz frequency can be used. High frequency RF power can be used in the range of about 100 to 700 watts, and low frequency RF power can be used in the range of 0 to 600 watts. It is preferable to adjust the total power of the high frequency RF power and the low frequency RF power in the range of 100 to 1300 watts and to change the high frequency RF power in the range of 100 to 1000 watts or to change the low frequency RF power in the range of 100 to 900 watts good. At this time, the RF power is a range required for decomposing or activating the raw material and the reaction gas.

In addition to the plasma generation, in addition to the above, the plasma generating unit may include a coil to generate the plasma by an inductively coupled plasma (ICP) method. On the other hand, it may be implemented as a remote plasma generation unit that is a remote (remote) plasma method for making the gas to the active species state by the plasma excitation from the outside of the chamber 10, a variety of methods can be applied.

When the deposition process is performed in the substrate processing apparatus configured as described above, the TEOS gas, the oxygen-containing gas, and the nitrogen-containing gas are supplied to the upper portion of the substrate S through the gas injection unit 20, and plasma is formed in the chamber 20. Then, active species are supplied onto the substrate to form an oxide film, and residual gas and by-products are discharged to the outside through the exhaust line 50. Of course, the substrate processing apparatus can be variously changed other than the above description.

2 is a flowchart illustrating a process of manufacturing an oxide film according to an embodiment of the present invention.

First, the substrate S is prepared and loaded into the chamber (S21). For example, a silicon wafer may be used as the substrate S, and substrates of various materials may be utilized as necessary. The substrate S is mounted on the substrate support in the chamber. In this case, a single substrate or a plurality of substrates S may be mounted on the substrate support, and a heater is mounted in the substrate support to heat the substrate to an appropriate temperature.

When the substrate S is mounted on the substrate support, the temperature and pressure inside the chamber are adjusted and maintained at a predetermined process temperature and process pressure (S22).

The process pressure is kept within the range of 1 [Torr] to 10 [Torr]. In the PECVD process, the deposition is effectively performed at a vacuum pressure in the range of 1 [Torr] to 10 [Torr].

The process temperature is controlled in the range of 80 ° C to 300 ° C. The upper limit of the process temperature to 300 ° C is because the film quality of the oxide film does not improve when the temperature exceeds 300 ° C. That is, 300 ° C. is a temperature at which the film quality begins to decrease, and when it exceeds 300 ° C., the film quality decreases. The lower limit of the process temperature to 80 ° C is related to the TEOS vaporization temperature, which is a liquid source. Since the TEOS vaporization temperature, which is a liquid source, is 168 ° C, less vaporization occurs at a temperature lower than that, so that particle generation or deposition does not occur easily. Therefore, if the process temperature is lower than 80 degrees, less vaporization of TEOS causes deposition problems.

After the above process temperature and process pressure have been achieved, an oxide film is deposited on the substrate by exposing the substrate to various gases (S23). Oxide film deposition is achieved by injecting a raw material containing a TEOS gas, an oxygen containing gas, and a nitrogen containing gas to the substrate in the chamber. The raw material injected into the chamber is excited in a plasma state in the chamber to form active species to make the membrane adsorption more effective. Alternatively, it can be excited into a plasma state at a remote and fed into the chamber.

TEOS gas is a gas in which an oxygen atom (O) and a carbon atom (C) are attached using silicon (Si) as a center element, and an oxygen-containing gas may be O ₂ or the like, and the nitrogen-containing gas may be N ₂ O. , NO, N ₂ and the like can be used. As described above, in addition to the reaction of the oxygen-containing gas to the TEOS gas, by adding an additional nitrogen-containing gas, nitrogen atoms (N) may be deposited at the interface between the substrate and the oxide film, thereby further improving the compactness of the oxide film. Since the substrate is made of silicon (Si) and the oxide film is made of silicon dioxide (SiO ₂ ), such a Si / SiO ₂ Nitrogen (N) is present at the interface to improve the compactness. Nitrogen (N) deposition at the Si / SiO ₂ interface mitigates the instability of the interface and makes it possible to obtain a denser oxide film than the thin film growth. In addition, the difference in chemical bonding between the interface and the surface portion of the Si / SiO ₂ layer is reduced, which may stabilize the silicon (Si) bond in the oxide film under the influence of nitrogen (N).

When the TEOS gas flows into the chamber, the carrier gas of helium (He) is also introduced, and the ratio of the TEOS gas and the carrier gas is preferably 1:20. For example, when 100 [sccm] of TEOS gas is introduced, the carrier gas controls 2000 [sccm] to be introduced.

When the temperature inside the chamber is kept at a low temperature in the range of 80 ° C to 300 ° C, the ratio of the supply amount of the raw material flowing into the chamber is [TEOS gas flow rate]: [oxygen-containing gas flow rate]: [nitrogen-containing gas flow rate] = [1]: [150]: preferably having [10] to [100]. When having such a raw material feed rate ratio, it is possible to improve the density of the film at low temperatures. Therefore, when the TEOS gas is introduced into 100 [sccm], the oxygen-containing gas is introduced into 15000 [sccm], the nitrogen-containing gas is preferably introduced into 1000 [sccm] ~ 10000 [sccm]. At this time, the distance between the substrate and the gas injection unit is preferably maintained at 7mm. That is, the ratio of nitrogen-containing gas / TEOS gas is 10 to 100.

3 is a graph measuring the wet rate of an oxide film when the oxide film is deposited while varying the flow rate ratio of [N ₂ O / O ₂ ] according to an embodiment of the present invention.

The smaller the wet etch rate of the oxide film, the denser the film. Referring to FIG. 3, it can be seen that when [N ₂ O / O ₂ ] is '0', that is, when N ₂ O is not supplied, the wet rate is highest and the density of the film is lowered. As N ₂ O is supplied, the density is improved, and when the [N ₂ O / O ₂ ] ratio is supplied at 5000 [sccm], the wet rate is the smallest, and the density is the best. Can be.

Figure 4 is a graph measuring the hardness when the oxide film is deposited while varying the flow rate ratio of N ₂ O / O ₂ in accordance with an embodiment of the present invention.

Hardness refers to the rigidity of the membrane, and Modulus refers to the elastic modulus indicating the extent of stretching and deformation of the membrane. Hardness and Modulus are measured to determine the mechanical properties of the membrane. Measuring the hardness and the bending strain of the rigidity is done simultaneously on the same instrument. After the force and displacement are measured by indentation or scraping using a micro-indenter, mechanical properties of the thin film or the microelement are obtained therefrom. Basically, elastic modulus, hardness, fracture toughness, surface contour, etc. can be measured, and through the addition of CSM (Continuous Stiffness Measurement) module, the physical properties and creep phenomenon according to depth can be measured.

Referring to FIG. 4, when [N ₂ O / O ₂ ] is '0', that is, when N ₂ O is not supplied, both hardness and modulus are the smallest. As N ₂ O is supplied, both hardness and modulus are improved.

5 is a graph showing the magnitude of the breakdown voltage according to the flow rate ratio of N ₂ O ₂ in accordance with an embodiment of the present invention. Referring to FIG. 5, the dielectric breakdown voltage of the horizontal side is not significantly affected by the flow rate of N ₂ O until 5 [MV / cm], but in the range of 5 [MV / cm] to 9 [MV / cm], N _2. If O is not supplied, the insulation of the oxide film is broken and more current can be seen. Therefore, when N ₂ O is supplied than when N ₂ O is not supplied, it can be seen that the density of the oxide film is increased and the insulation is further improved.

Although the present invention has been described with reference to the accompanying drawings and the preferred embodiments described above, the present invention is not limited thereto but is limited by the following claims. Accordingly, those skilled in the art will appreciate that various modifications and changes may be made thereto without departing from the spirit of the following claims.

10: chamber 20: gas injection unit
30: substrate support 40: pump
50: exhaust line 60: power supply means
70: raw material supply source 80: raw material supply line
90: valve

Claims (15)

Loading the substrate into the chamber;
Maintaining and controlling the temperature and pressure in the chamber to the process temperature and the process pressure;
And forming an oxide film by injecting a raw material including a TEOS gas, an oxygen containing gas, and a nitrogen containing gas to the substrate in the chamber.
Maintaining the process temperature in the range of 80 ° C. to 300 ° C., and adjusting the ratio of the supply amount of the raw material introduced into the chamber to deposit the oxide film. The thin film according to claim 1, wherein the ratio of the supply amount of the raw material is [TEOS gas flow rate]: [oxygen-containing gas flow rate]: [nitrogen-containing gas flow rate] = [1]: [150]: [10 to 100] ratio Manufacturing method. The method of claim 1, wherein the raw material injected into the chamber is excited in a plasma state. The method of claim 1, wherein the raw material is remotely excited in a plasma state and then sprayed into a chamber. The method for manufacturing a thin film according to any one of claims 1 to 3, wherein the process pressure is maintained at 1 Torr to 10 Torr. The thin film production method according to any one of claims 1 to 3, wherein the nitrogen-containing gas is N ₂ O, NO, or N ₂ gas. A chamber having an interior space in which the substrate is processed;
An exhaust line connected to the interior space of the chamber;
A substrate supporter supporting the substrate in the internal space;
A gas injection part spaced apart from the substrate support part;
A raw material supply line connected to the gas injection unit and provided for each raw material including a TEOS gas, an oxygen containing gas, and a nitrogen containing gas;
Heating unit for maintaining the process temperature in the chamber in the range of 80 ℃ ~ 300 ℃;
A flow rate adjusting unit controlling a ratio of the supply amount of the raw material supplied to the raw material supply line;
And the substrate processing apparatus. The method according to claim 7, wherein the ratio of the supply amount of the raw material supplied to the raw material supply line is [TEOS gas flow rate]: [oxygen-containing gas flow rate]: [nitrogen-containing gas flow rate] = [1]: [150]: [10 Substrate processing apparatus individually controlled through the flow rate control unit to have a ratio. The substrate processing apparatus of claim 7, wherein the heating unit is a heater installed inside the substrate support unit. The substrate processing apparatus of claim 7, wherein the heating unit is a heating unit provided on the chamber wall. The substrate processing apparatus of claim 7, wherein the substrate support part comprises a lifting mechanism for adjusting a gap between the gas injection part and the substrate. The substrate processing apparatus of claim 7, wherein a distance between the gas injection unit and the substrate is 7 mm to 15 mm. The substrate processing apparatus of claim 7, further comprising a plasma generator configured to generate plasma in an inner space of the chamber. The substrate processing apparatus of claim 7, further comprising a remote plasma generator configured to excite the raw material in a plasma state outside the chamber and to supply the raw material to a raw material supply line. The substrate processing apparatus according to any one of claims 7 to 14, wherein the nitrogen-containing gas is N ₂ O, NO, or N ₂ gas.

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