KR20140020026A - Uv light emitting device and light emitting device package - Google Patents
Uv light emitting device and light emitting device package Download PDFInfo
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- KR20140020026A KR20140020026A KR1020120086365A KR20120086365A KR20140020026A KR 20140020026 A KR20140020026 A KR 20140020026A KR 1020120086365 A KR1020120086365 A KR 1020120086365A KR 20120086365 A KR20120086365 A KR 20120086365A KR 20140020026 A KR20140020026 A KR 20140020026A
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- Prior art keywords
- layer
- light emitting
- emitting device
- gallium nitride
- disposed
- Prior art date
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- 239000004065 semiconductor Substances 0.000 claims abstract description 100
- 230000000903 blocking effect Effects 0.000 claims abstract description 50
- 229910002601 GaN Inorganic materials 0.000 claims description 76
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 54
- 238000000034 method Methods 0.000 claims description 16
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 14
- 229910052738 indium Inorganic materials 0.000 claims description 12
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 11
- 239000010410 layer Substances 0.000 description 333
- 239000000758 substrate Substances 0.000 description 27
- 230000004888 barrier function Effects 0.000 description 13
- 239000000463 material Substances 0.000 description 13
- 239000002019 doping agent Substances 0.000 description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 239000000945 filler Substances 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- VRIVJOXICYMTAG-IYEMJOQQSA-L iron(ii) gluconate Chemical compound [Fe+2].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O VRIVJOXICYMTAG-IYEMJOQQSA-L 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910019897 RuOx Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910018229 Al—Ga Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910020068 MgAl Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 206010070834 Sensitisation Diseases 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000002496 gastric effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
Embodiments relate to an ultraviolet light emitting device and a light emitting device package.
In general, Group III nitrides such as gallium nitride (GaN), aluminum nitride (AlN), and indium gallium nitride (InGaN) have excellent thermal stability, and have a direct transition energy band structure. Mainly used. Specifically, group III nitrides are widely used in blue light emitting diodes (Blue LEDs) and ultraviolet light emitting diodes (UV LEDs).
The ultraviolet light emitting diode has a problem that the light emitting efficiency and the light output are significantly inferior to the blue light emitting diode. This acts as a large barrier to the practical use of ultraviolet light emitting diodes.
Near UV light emitting diodes (Near UV LED) are used for gastric sensitization, resin curing, and ultraviolet light treatment. In addition, near-ultraviolet light-emitting diodes are also used in lighting devices that combine visible phosphors to produce visible light of various colors.
The embodiment provides an ultraviolet light emitting device and a light emitting device package capable of preventing a shortage of holes at a high current.
In addition, the embodiment provides an ultraviolet light emitting device and a light emitting device package that can block cracks.
The ultraviolet light emitting device according to the embodiment has an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, and emits ultraviolet rays. The ultraviolet light emitting device is disposed between the second conductivity type semiconductor layer and the active layer. An electron blocking layer disposed on the; And a p-type gallium nitride layer disposed between the electron blocking layer and the active layer.
The ultraviolet light emitting device according to the embodiment has an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and emits ultraviolet light, and is disposed under the first conductive semiconductor layer. A buffer layer is further included, and the buffer layer includes a crack blocking layer.
Ultraviolet light emitting device package according to the embodiment, the package body; A light emitting element disposed in the package body; A first electrode layer and a second electrode layer disposed on the package body and electrically connected to the light emitting device; And a filler filling the light emitting device, wherein the light emitting device is an ultraviolet light emitting device that has an active layer disposed between a first conductive semiconductor layer and a second conductive semiconductor layer, and emits ultraviolet rays. The light emitting device includes: an electron blocking layer disposed between the second conductivity type semiconductor layer and the active layer; And a p-type gallium nitride layer disposed between the electron blocking layer and the active layer.
Ultraviolet light emitting device package according to the embodiment, the package body; A light emitting element disposed in the package body; A first electrode layer and a second electrode layer disposed on the package body and electrically connected to the light emitting device; And a filler filling the light emitting device, wherein the light emitting device is an ultraviolet light emitting device that has an active layer disposed between a first conductive semiconductor layer and a second conductive semiconductor layer, and emits ultraviolet rays. The light emitting device further includes a buffer layer disposed under the first conductivity type semiconductor layer, and the buffer layer includes a crack blocking layer.
By using the ultraviolet light emitting device and the light emitting device package according to the embodiment, it is possible to prevent the lack of holes at high current.
It is also possible to block cracks.
1 is a view showing an ultraviolet light emitting device according to the embodiment.
FIG. 2 is a view showing a modified example of the first conductive semiconductor layer shown in FIG. 1.
3 is a view showing an ultraviolet light emitting device according to another embodiment.
4 is a view showing the ultraviolet light emitting device shown in FIG. 1 applied to a horizontal light emitting device.
FIG. 5 is a view showing the ultraviolet light emitting device shown in FIG. 1 applied to a vertical light emitting device. FIG.
6 is a cross-sectional view of a light emitting device package according to the embodiment.
The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. Also, the size of each component does not entirely reflect the actual size.
In the description of embodiments according to the present invention, it is to be understood that where an element is described as being formed "on or under" another element, On or under includes both the two elements being directly in direct contact with each other or one or more other elements being indirectly formed between the two elements. Also, when expressed as "on or under", it may include not only an upward direction but also a downward direction with respect to one element.
Hereinafter, an ultraviolet light emitting device and a light emitting device package according to an embodiment will be described with reference to the accompanying drawings.
1 is a view showing an ultraviolet light emitting device according to the embodiment.
The ultraviolet light emitting device illustrated in FIG. 1 may emit light in an ultraviolet region. As an example, the ultraviolet light emitting device illustrated in FIG. 1 may emit ultraviolet light having a wavelength within a range of 360 nm to 400 nm.
Referring to FIG. 1, the ultraviolet light emitting device according to the embodiment may include a
The
The
The
The
The thickness of the
The growth temperature of the
The
The first buffer layer may be a low temperature buffer layer. The low temperature buffer layer can be formed by adopting LT-GaN as a material. The low temperature buffer layer may be formed to a thickness of approximately 250 μs.
The second buffer layer may be formed by adopting u (undoped) -GaN that is not doped with an n-type or p-type conductive dopant. When the second buffer layer made of u-GaN is grown, the crystallinity of the first conductivity-
The second buffer layer has a significantly lower electrical conductivity than the first and second conductivity
The
The light emitting structure is formed on the
The first conductivity-
The first
As illustrated in FIG. 1, the first conductivity-
FIG. 2 is a diagram illustrating a modified example of the first
Referring to FIG. 2, the first
The first
The
The second
Here, the second
The overall thickness of the second
The
When the
Referring back to FIG. 1, an
The
The
The second conductivity
For example, the second conductivity-
The second
Here, the second conductivity
The
The
The thickness of the
The p-type gallium nitride (p-GaN)
More specifically, the p-type
When the p-type
Here, the thickness of the p-type
The manufacturing method of the ultraviolet light emitting device shown in FIG. 1 will be described.
The
Next, the
The temperature in the reaction vessel is lowered to 510 ° C., and a first buffer layer made of GaN is grown on the
After growing the first buffer layer, only TMG is stopped and the temperature in the reaction vessel is raised to 1050 ° C. At 1050 ° C., a second buffer layer made of u-GaN is grown to a thickness of about 15,000 kPa in the same manner using TMG and ammonia gas as source gas.
Thereafter, at 1050 ° C., a first conductive layer consisting of GaN doped with 3 × 10 19 / cm 3 of n-type dopant in the same manner using TMG as raw material gas, ammonia gas, and silane gas as impurity gas The
Next, the
Next, the p-type
Next, the
Finally, the second conductivity
3 is a view showing an ultraviolet light emitting device according to another embodiment.
Referring to FIG. 3, an ultraviolet light emitting device according to another embodiment may include a
The ultraviolet light emitting device according to another embodiment is different from the light emitting diode shown in FIG. 1, and the
The contents of the buffer layer 200 'are the same as the
The crack blocking layer 250 'may be disposed in the buffer layer 200', in particular, in the second buffer layer formed of u-GaN.
The crack blocking layer 250 'includes an aluminum gallium nitride (AlGaN)
The crack blocking layer 250 'of the AlGaN-GaN-InGaN structure can prevent cracks due to heterojunctions having different lattice constants. This is because the V-defect generated when the indium gallium nitride layer 255 'is disconnected from the crack that occurs under the crack blocking layer 250' and the crack occurring on the crack blocking layer 250 '. Therefore, due to the V-defect characteristic of the indium gallium nitride layer 255 ', the crack blocking layer 250' may block a crack, which may occur in the vertical direction, in the middle in the laminated structure of the ultraviolet light emitting device according to another embodiment. Can be. The
The
The total thickness of the
In the
4 is a diagram illustrating the ultraviolet light emitting device shown in FIG. 1 applied to a horizontal light emitting device.
In the horizontal light emitting device illustrated in FIG. 4, a portion of the first
The
Meanwhile, a reflective electrode layer may be formed instead of the
The
On the other hand, although not shown in the drawings, it is obvious that the ultraviolet light emitting device according to another embodiment shown in Figure 3 can also be applied to the horizontal light emitting device as shown in FIG.
FIG. 5 is a view showing the ultraviolet light emitting device shown in FIG. 1 applied to a vertical light emitting device.
In the vertical light emitting device shown in FIG. 5, the
The
The
The
Meanwhile, an adhesive layer (not shown) may be further formed between the
The
After the
On the other hand, although not shown in the drawings, it is obvious that the ultraviolet light emitting device according to another embodiment shown in Figure 3 can also be applied to the vertical light emitting device as shown in FIG.
6 is a cross-sectional view of a light emitting device package according to the embodiment.
Referring to FIG. 6, the light emitting device package according to the embodiment may be installed on the
The
The
The
The
The light emitting device package illustrated in FIG. 6 may mount at least one or more light emitting devices of the above-described embodiments, but is not limited thereto.
A plurality of light emitting device packages according to the embodiment may be arranged on a substrate, and a light guide plate, a prism sheet, a diffusion sheet, or the like, which is an optical member, may be disposed on an optical path of the light emitting device package. The light emitting device package, the substrate, and the optical member may function as a light unit. Another embodiment may be implemented as a display device, an indicator device, or a lighting system including the semiconductor light emitting device or the light emitting device package described in the above embodiments, and for example, the lighting system may include a lamp or a street lamp. .
While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It will be understood that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.
100: substrate
200: buffer layer
250: crack blocking layer
300: first conductive semiconductor layer
400: active layer
500: second conductivity type semiconductor layer
600: electronic blocking layer
700: p-GaN layer
Claims (13)
An electron blocking layer disposed between the second conductivity type semiconductor layer and the active layer; And
A p-type gallium nitride layer disposed between the electron blocking layer and the active layer;
Ultraviolet light emitting device comprising a.
The p-type gallium nitride layer has a thickness of 10 kPa or more and 15 kPa or less.
And the p-type gallium nitride layer is disposed between the aluminum gallium nitride layer formed at the top of the active layer and the aluminum gallium nitride layer formed at the bottom of the electron blocking layer.
Further comprising a buffer layer disposed under the first conductive semiconductor layer,
The buffer layer comprises a crack blocking layer, ultraviolet light emitting device.
An ultraviolet light emitting device having a V-defect.
Aluminum gallium nitride layer;
A gallium nitride layer disposed on the aluminum gallium nitride layer; And
An indium gallium nitride layer disposed on the gallium nitride layer;
UV light emitting device comprising a.
The crack blocking layer is an ultraviolet light emitting device in which the aluminum gallium nitride layer, the gallium nitride layer and the indium gallium nitride layer are stacked in a plurality of times.
The buffer layer comprises a first buffer layer; And a second buffer layer disposed on the first buffer layer,
And the crack blocking layer is disposed in the second buffer layer.
A light emitting element disposed in the package body;
A first electrode layer and a second electrode layer disposed on the package body and electrically connected to the light emitting device; And
It includes; filling the light emitting element;
The light emitting element is an ultraviolet light emitting element having an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer and emitting ultraviolet rays,
The ultraviolet light emitting device,
An electron blocking layer disposed between the second conductivity type semiconductor layer and the active layer; And
Further comprising; a p-type gallium nitride layer disposed between the electron blocking layer and the active layer,
UV light emitting device package.
The p-type gallium nitride layer has a thickness of 10 Pa or more and 15 Pa or less, UV light emitting device package.
A light emitting element disposed in the package body;
A first electrode layer and a second electrode layer disposed on the package body and electrically connected to the light emitting device; And
It includes; filling the light emitting element;
The light emitting element is an ultraviolet light emitting element having an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer and emitting ultraviolet rays,
The ultraviolet light emitting device further includes a buffer layer disposed under the first conductivity type semiconductor layer,
The buffer layer comprises a crack blocking layer, ultraviolet light emitting device package.
Aluminum gallium nitride layer;
A gallium nitride layer disposed on the aluminum gallium nitride layer; And
An indium gallium nitride layer disposed on the gallium nitride layer;
UV light emitting device package comprising a.
The crack blocking layer is a UV light emitting device package, the aluminum gallium nitride layer, the gallium nitride layer and the indium gallium nitride layer is stacked in a plurality of times.
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20050082183A (en) * | 2004-02-18 | 2005-08-23 | 삼성전기주식회사 | Nitride based semiconductor light emitting device |
JP2006510234A (en) * | 2003-06-25 | 2006-03-23 | エルジー イノテック カンパニー リミテッド | Nitride semiconductor light emitting device and manufacturing method thereof |
KR20060132013A (en) * | 1998-03-12 | 2006-12-20 | 니치아 카가쿠 고교 가부시키가이샤 | Nitride semiconductor device |
JP2007180499A (en) * | 2005-12-28 | 2007-07-12 | Samsung Electro Mech Co Ltd | Nitride semiconductor light-emitting device |
-
2012
- 2012-08-07 KR KR1020120086365A patent/KR102014172B1/en active IP Right Grant
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20060132013A (en) * | 1998-03-12 | 2006-12-20 | 니치아 카가쿠 고교 가부시키가이샤 | Nitride semiconductor device |
JP2006510234A (en) * | 2003-06-25 | 2006-03-23 | エルジー イノテック カンパニー リミテッド | Nitride semiconductor light emitting device and manufacturing method thereof |
KR20050082183A (en) * | 2004-02-18 | 2005-08-23 | 삼성전기주식회사 | Nitride based semiconductor light emitting device |
JP2007180499A (en) * | 2005-12-28 | 2007-07-12 | Samsung Electro Mech Co Ltd | Nitride semiconductor light-emitting device |
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