KR20140000750A - Plasma generator and thin film deposition apparatus comprising the same - Google Patents

Abstract

The present invention relates to a plasma generator and a thin film deposition apparatus including the same and, more specifically, to a plasma generator which is not only able to enlarge a substrate and evenly supply plasma for the substrate but also able to suppress the loss of a reactant radical and a thin film deposition apparatus including the same. [Reference numerals] (AA,BB) Gas injection

Description

[0001] The present invention relates to a plasma generating apparatus and a thin film deposition apparatus including the plasma generating apparatus,

The present invention relates to a plasma generating apparatus and a thin film deposition apparatus including the plasma generating apparatus. Specifically, the present invention relates to a plasma generating apparatus and a thin film deposition apparatus including the plasma generating apparatus capable of increasing the size of a substrate and uniformly supplying plasma to the substrate, as well as suppressing loss of reactant radicals.

As a deposition method for forming a thin film on a substrate such as a semiconductor wafer (hereinafter referred to as a substrate), chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD), atomic layer Techniques such as atomic layer deposition (ALD) and plasma enhanced atomic layer deposition (PEALD) have been used.

1 is a schematic diagram showing a basic concept of an atomic layer deposition method among substrate deposition methods. As shown in FIG. 1, the atomic layer deposition method injects a raw material gas containing a raw material such as trimethyl aluminum (TMA) onto a substrate, and then discharges an inert purge gas such as argon (Ar) and exhausts unreacted materials. Adsorbs a single molecular layer onto the substrate, and injects a reaction gas containing a reactant such as ozone (O ₃ ) that reacts with the raw material, followed by inert purge gas injection and unreacted material / by-product exhaust through a single atom. The layer (Al-O) will be formed.

In addition, the reaction gas is plasma-formed in an electric field formed by an electrode, a coil, etc. to which a direct current, an alternating current, a high frequency voltage, etc. are applied, and is supplied to a substrate, so that efficient thin film deposition can be performed. A conventional plasma generating apparatus includes a direct plasma apparatus for generating a plasma between a pair of opposing electrodes to directly deposit on a substrate adjacent to the electrode, and a plasma generated from a device spaced apart from the substrate, A direct plasma apparatus has been proposed in which a film quality degradation caused by a charge trap caused by ion bombardment and high energy electrons is caused It is preferred to use a remote plasma device, particularly a remote plasma device that utilizes a plasma flux capable of growing a dense thin film by mild ion bombardment.

On the other hand, a remote plasma apparatus for supplying a plasma to a substrate through a single slot has a problem that it is difficult to make a large-sized substrate, and a device utilizing a slit, a showerhead, or the like for plasma supply is used. In the case of the slit type apparatus, the supply of the plasma is concentrated at several points of the long slit, so that it is difficult to uniformly supply the plasma. In the case of the showerhead type apparatus, the increase of the surface area by the multiple jet holes of the shower head causes loss There is an increasing problem.

Accordingly, there is a demand for a plasma generating apparatus and a thin film deposition apparatus including the plasma generating apparatus, which are capable of increasing the size of the substrate and uniformly supplying the plasma to the substrate, as well as suppressing loss of reactant radicals.

The present invention provides a plasma generator capable of large area of a substrate to be processed by forming a plurality of independent discharge cells in which a pair of opposing electrodes are arranged in parallel and supplying plasma therethrough, and a thin film deposition apparatus including the same. The purpose is to provide.

In addition, the present invention provides a plasma generating apparatus and a thin film deposition apparatus including the same, which can perform efficient thin film deposition by increasing the plasma generation area and density through a plurality of discharge cells formed by a pair of opposite electrodes. For the purpose of

In addition, an object of the present invention is to provide a plasma generator and a thin film deposition apparatus in which the amount of plasma supplied per unit area of a substrate to be processed is uniform.

Furthermore, an object of the present invention is to provide a plasma generator and a thin film deposition apparatus capable of suppressing the loss of reactant radicals contained in the plasma compared to the conventional showerhead method.

In order to solve the above problems,

A first electrode including a gas injection hole and a groove part connected to the gas injection hole at a bottom thereof; A second electrode disposed facing the lower surface of the first electrode and including a plasma injection hole and having a different polarity from the first electrode; An insulator disposed between the first electrode and the second electrode; And at least one cavity into which a discharge gas is injected into a space formed by each of the grooves, the insulator, and the second electrode of the first electrode, wherein the cavity is disposed between the first electrode and the second electrode. Provided is a plasma generating apparatus in which discharge gas is converted into plasma.

Here, the ratio between the inner surface area of the cavity and the inner surface area of the plasma injection hole provides a plasma generator, characterized in that 2 to 30.

In addition, a power source is applied to one of the first electrode and the second electrode, and the other electrode provides a plasma generating apparatus, characterized in that the floating (floating) or grounded state.

On the other hand, the first electrode is a cathode (cathode), the second electrode is an anode (anode), the power is applied to the first electrode, characterized in that the second electrode is floating or grounded, Provided is a plasma generator.

Here, the insulating layer is provided in the plasma generator, characterized in that the entire surface of the upper surface of the second electrode opposite to the lower surface of the first electrode except for the plasma injection hole.

In addition, the shape of the groove portion is provided with a plasma generator, characterized in that the cylindrical shape, hexahedral shape or concentric columnar shape.

In addition, there is provided a plasma generating apparatus, characterized in that the cross section of the plasma injection hole is a circle, a square or concentric circles.

Further, there is provided a plasma generator, characterized in that the shape of the second electrode is fan-shaped, cylindrical or hexahedral.

Here, the shape of the second electrode is a fan-shaped, the size of the groove portion and the plasma injection hole is provided with the plasma generator, characterized in that the increasing along the direction of the larger radial radius.

On the other hand, it characterized in that it comprises a gas injection unit for injecting the discharge gas into the cavity, the gas injection unit includes a gas flow path disposed on the first electrode, the gas flow path is connected to the gas injection hole To provide a plasma generating apparatus.

In addition, the power supply is provided with a plasma generator, characterized in that the DC power, AC power or high frequency power.

And, the discharge gas is characterized in that the argon or helium, provides a plasma generating device.

On the other hand, a reaction chamber; A substrate mounting part disposed inside the reaction chamber and on which a substrate is mounted; A gas supply unit disposed in the reaction chamber and including a plasma generator according to claim 1; And a substrate transfer section for relatively moving the substrate mounting section relative to the gas supply section so as to supply the gas supplied from the gas supply section to the processing surface of the substrate.

Wherein the substrate includes a rotating shaft fixed to a lower center of the substrate loading part and a driving motor rotating the rotating shaft, wherein the relative movement of the substrate loading part with respect to the gas supplying part is a curved movement. Thereby providing a deposition apparatus.

The power transmitting member includes a power transmitting member in which the transmitting portion of the substrate is connected to each of the plurality of shafts, the shaft and the substrate loading portion, and a driving motor for circulatingly moving the power transmitting member connected thereto by rotating at least one shaft of the shaft And a relative movement of the substrate mounting part with respect to the gas supply part includes a linear movement and a curved movement.

Furthermore, the shape of the second electrode included in the plasma generator disposed in a section in which the relative movement with respect to the gas supply part of the substrate mounting part is curved is a fan shape, and the size of the groove part and the plasma injection hole is the fan shape. Provided is a thin film deposition apparatus, characterized in that the curve radius of the shape increases with the larger direction.

The plasma generating apparatus according to the present invention has an effect of making the large area of the substrate to be processed easy by forming a plurality of independent discharge cells in which a pair of opposing electrodes are arranged in parallel and supplying plasma therethrough.

The plasma generating apparatus according to the present invention has an effect of performing effective thin film deposition by increasing the plasma generating area and density inside a plurality of discharge cells formed by a pair of opposing electrodes.

The plasma generating apparatus according to the present invention has a uniformity of a thin film generated by uniformly supplying plasma per unit area of a substrate to be processed by the shape of a pair of opposing electrodes and the shape and arrangement of a plurality of discharge cells formed therefrom. It can improve the uniformity.

In the plasma generating apparatus according to the present invention, although the cathode and anode electrodes form a plurality of discharge cells, each electrode is composed of one electrode as a whole, and thus the power distribution to each electrode is easy. .

The plasma generating apparatus according to the present invention can suppress the loss of reactant radicals contained in the plasma as compared to the conventional showerhead method by supplying the plasma to the substrate to be processed through a plurality of discharge cells formed by a pair of opposite electrodes. It can have an effect.

FIG. 1 is a schematic view showing a basic concept related to an atomic layer deposition method.
FIG. 2 shows an embodiment of a semi-batch type thin film deposition apparatus to which the plasma generating apparatus according to the present invention can be applied.
FIG. 3 illustrates an embodiment of a track type thin film deposition apparatus to which the plasma generating apparatus according to the present invention can be applied.
4 schematically shows a plasma generating apparatus according to the present invention.
5 illustrates various embodiments of the structure of the second electrode constituting the plasma generating apparatus according to the present invention.
FIG. 6 illustrates a lower portion of the second electrode in a state in which a plasma injection hole is partially disposed in the second electrode in the plasma generating apparatus according to the present invention.
7 is an enlarged view of a portion of a first electrode and a second electrode forming one cavity in another embodiment of the plasma generating apparatus according to the present invention.
FIG. 8 schematically illustrates a state in which a plasma is generated in a cavity shown in FIG. 7 and supplied to a substrate through a plasma injection hole.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments described herein but may be embodied in other forms. Rather, the embodiments disclosed herein are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the invention to those skilled in the art. Like numbers refer to like elements throughout.

The plasma generating apparatus according to the present invention can be widely applied to various thin film deposition apparatuses such as a semi-batch type and a track type.

FIG. 2 illustrates an embodiment of a semi-batch type to which the plasma generating apparatus according to the present invention can be applied. In the semi-batch type thin film deposition apparatus, a plurality of substrates are generally placed inside a reaction chamber and deposition is performed by sequentially or simultaneously supplying process gases such as source gas and reaction gas to each of the plurality of substrates. Device.

Specifically, FIG. 2A is a perspective view showing the overall configuration of a semi-batch type thin film deposition apparatus 1000. FIG. The semi-batch type thin film deposition apparatus 1000 generally includes a reaction chamber 300 for performing deposition of a substrate, a load lock chamber 400 for introducing / withdrawing the substrate into / from the reaction chamber 300, a reaction chamber 300 A gas supply source 500 for supplying a source gas, a reaction gas, and a purge gas, a control unit 600 for controlling the process, and the like.

In addition, the reaction chamber 300 may include a chamber lead 310 that may open and close the reaction chamber 300, and a chamber lead lifter 330 that may lift and lower the chamber lead 310 to open and close the reaction chamber 300. ), And may include one or more gas supplies. Here, the gas supply part may include one or more source gas supply parts 380 and one or more plasma generating parts 200. The source gas supply unit 380 and the plasma generating unit 200 may be preferably coupled to the chamber lead 310, and may be alternately disposed along the transfer direction of the substrate.

The source gas supply unit 380 may be in various forms such as a slot, a slit, a showerhead, and the like, and injects the source gas to a substrate passing through the lower portion of the raw material gas on the substrate. To form a single molecular layer of. In addition, the plasma generation unit 200 may be the same or different form as the source gas supply unit 380, and the high energy electrons (high energy) through the plasma to separate the discharge gas, such as argon, helium, with cations and electrons electron) to thereby plasma-react the reaction gas charged in the reaction chamber 300 to perform deposition on the substrate.

In addition, the number of the source gas supply unit 380 and the plasma generating unit 200 may vary depending on the number of substrates, process conditions, and the like introduced into the reaction chamber 300, and is generally known in the art. It can be appropriately chosen by a person of knowledge. The reaction chamber 300 may include means (not shown) for purging and evacuating unreacted process gases and byproducts.

FIG. 2B shows the interior of the chamber body 320 with the chamber lid 310 lifted. Inside the chamber body 320, a plurality of substrate seating surfaces 341 on which a plurality of substrates are respectively placed are placed on the substrate mounting portion, that is, the susceptor 340. 2C, a metal heater 350 is provided under the susceptor 340 to indirectly heat the substrate on the susceptor 340 to satisfy the temperature condition of the substrate for performing the deposition process .

2D shows the lower portion of the chamber body 320. FIG. Below the chamber body 320, there is a rotation axis 360 for rotating the susceptor 340. The rotating shaft 360 receives power from another driving motor (not shown) and rotates to rotate the susceptor 340 connected thereto and the substrate placed on the substrate seating surface 341 thereof.

That is, the rotation shaft 360 and the driving motor constitute a substrate transfer unit, and the movement of the substrate with respect to the source gas supply unit 380 and the plasma generator 200 becomes a curved movement. Meanwhile, in another embodiment, the source gas supply unit 380 and the plasma generator 200 fixed to the chamber lid 310 may rotate while the susceptor 340 is fixed. That is, the substrate is moved relative to the source gas supply unit 380 and the plasma generator 200, and the deposition process is performed by passing through the gas supply surfaces of the source gas supply unit 380 and the plasma generator 200.

A substrate supporting part 370 is provided under the chamber body 320 to move the substrate up and down when the substrate is drawn in / out. For example, the substrate support 370 supports the substrate on the susceptor 340 by lifting up and down through the metal heater 350, the susceptor 340, and a through hole (not shown) on the substrate seating surface 341. It may include a plurality, preferably three or more support pins (not shown) to raise and lower.

FIG. 3 illustrates an embodiment of a track type thin film deposition apparatus to which the plasma generating apparatus according to the present invention can be applied. The track-type thin film deposition apparatus belongs to a semi-batch type thin film deposition apparatus in a broad sense, but has a feature that the substrate is constituted by a power transmission member such as a belt, a chain or the like, a guide rail or the like which will be described later.

3A is a plan view showing the overall configuration of a track-type thin film deposition apparatus 2000. FIG.

3A, the track-type thin film deposition apparatus 2000 includes a reaction chamber 100 for performing a process such as a deposition operation on a substrate, a load lock chamber 700 capable of switching to a vacuum or atmospheric pressure state, A plurality of boats 810 for loading a substrate to be vapor-deposited, a plurality of boats 820 for loading a substrate on which vapor deposition has been completed, and a substrate inlet / outlet for introducing and withdrawing a substrate from the load lock chamber 700 to the reaction chamber 100 And a lead-out portion 900.

When a substrate is supplied to the reaction chamber 100, a first robot arm (not shown) inside the load lock chamber 700 transfers the substrate from the boat 810 into the load lock chamber 700. Subsequently, the load lock chamber 700 is converted into a vacuum state, and the second robot arm 910 of the substrate pull-out unit 900 receives the substrate and supplies the substrate to the reaction chamber 100. When the substrate is taken out from the reaction chamber 100, the process proceeds in the reverse order.

3B is a perspective view showing the inside of the chamber body 130 by separating the chamber lid 110 in the reaction chamber 100. As shown in FIG.

The reaction chamber 100 accommodates a substrate therein and provides a space for providing various components for performing a deposition operation or the like on the substrate. Furthermore, it provides an environment in which a substrate processing operation such as a deposition operation or the like can be performed by keeping the inside in a vacuum state by a vacuum equipment such as a pump (not shown) for exhausting air inside.

The reaction chamber 100 includes a chamber body 130 having an upper opening and a chamber lid 110 for opening and closing an opened upper portion of the chamber body 130. One side of the chamber body 130 has an opening 134 through which the substrate is drawn into and out of the reaction chamber 100 and a connector 132 that seals the substrate inlet and outlet 900 and the opening 134.

The openings 134 may be provided in the chamber body 130 in pairs. 3A, when two reaction chambers 100 are provided in the thin film deposition apparatus 2000 and two reaction chambers 100 are connected to one substrate inlet / outlet section 900, productivity and compatibility . That is, when the reaction chamber 100 is manufactured regardless of the direction of the reaction chamber 100 connected to the substrate inlet / outlet unit 900, a pair of openings 134 are provided to improve the productivity. Further, when it is necessary to change the connecting portion of the reaction chamber 100 while the reaction chamber 100 is connected to the substrate inlet / outlet portion 900, the substrate inlet / outlet portion 900 may be provided in the other opening portion So that compatibility can be improved.

In the present invention, the substrate inlet / outlet unit 900 is connected to the reaction chamber 100 to draw the substrate into the reaction chamber 100 or to draw the substrate after the deposition to the outside of the reaction chamber 100 . The substrate on which the deposition is completed is drawn out through the opening 134 by the second robot arm 910 of the substrate inlet / outlet 900 when the substrate loading part 150 moves by the transfer of the substrate as described later. The substrate requiring deposition is supplied to the substrate mounting portion 150 in the reaction chamber 100 through the opening portion 134 by the second robot arm 910 of the substrate inlet /

On the other hand, the chamber lead 110 of the reaction chamber 100 may be provided with at least one gas supply unit, that is, at least one source gas supply unit 390 and at least one plasma generating unit 200, which are along the transfer direction of the substrate Can be alternately placed. The source gas supply unit 390 may be in various forms such as a slot, a slit, a showerhead, and the like, and injects the source gas to a substrate passing through the lower portion of the raw material gas on the substrate. To form a single molecular layer of. In addition, the plasma generation unit 200 may be the same or different form as the source gas supply unit 380, and the high energy electrons (high energy) through the plasma to separate the discharge gas, such as argon, helium, with cations and electrons electrons) to thereby plasma-react the reaction gas such as ozone filled in the reaction chamber 100 to deposit a thin film on the substrate.

In addition, the number of the gas supply unit, that is, the source gas supply unit 390 and the plasma generating unit 200 may be different depending on the number of substrates, process conditions, etc. introduced into the reaction chamber 100, It may be appropriately selected by those skilled in the art. The reaction chamber 100 may include means (not shown) for purging and evacuating unreacted process gases and byproducts.

As shown in FIG. 3B, the reaction chamber 100 includes a substrate mounting part 150 on which a substrate to be processed is mounted, a substrate transfer part for transferring the substrate mounting part 150 along a predetermined path, Is connected to a plurality of shafts and pulleys (182, 184) respectively connected to the respective shafts or the shafts and coupled with the substrate loading part (150), thereby being driven by the rotation of the shaft and / And a guide rail 180 for guiding the conveyance path of the substrate loading unit 150. The guide rail 180 may be a belt or a chain for conveying the substrate.

Specifically, at least one of the plurality of shafts receives power from a driving motor (not shown) to rotate the pulleys 182 and 184 connected thereto, thereby driving the power transmission member 190 connected to the pulleys 182 and 184. As a result, the board mounting portion 150 coupled to the power transmitting member 190 is circulated along the guide rail 180 by driving the power transmitting member 190.

Accordingly, the movement of the substrate mounting unit 150 with respect to the gas supply unit, that is, the source gas supply unit 380 and the plasma generating unit 200 includes a curved movement and a linear movement, and the substrate seated on the substrate mounting unit 150. The process surface of the vapor deposition process is performed by passing through the gas supply surface of the source gas supply unit 380 and the plasma generating unit 200. Here, the source gas supply unit 380 and the plasma generating unit 200 may be installed in a linear movement section and / or a curved movement section, preferably in a linear movement section.

A plurality of metal heaters 170 may be disposed under the transfer path of the substrate loading unit 150 in the reaction chamber 100. The substrate heating unit 170 may be indirectly heated by the metal heater 170, The deposited substrate is subjected to a temperature condition for performing the deposition process.

4 schematically shows a structure of a plasma generating apparatus according to the present invention. Specifically, FIG. 4 illustrates the top surface, the cross section, and the bottom surface of the plasma generator in order from top to bottom. As shown in FIG. 4, the plasma generating apparatus according to the present invention may include a first electrode 210 and a second electrode 220. The first electrode 210 and the second electrode 220 have different polarities. For example, the first electrode 210 may be a cathode and the second electrode 220 may be an anode, or vice versa.

In addition, a power source (not shown) may be applied to one of the first electrode 210 and the second electrode 220, and the other electrode may be in a floating or grounded state. Preferably, the first electrode 210 is a cathode and power is applied thereto, and the second electrode 220 is an anode and is floating or grounded, more preferably a floating state. Can be. The power source may be, for example, a DC power source, an AC power source, a high frequency power source, or the like.

As shown in FIG. 4, in the plasma generating apparatus, the first electrode 210 may include one or more gas injection holes 212 and lower portions of the gas injection holes 212 to which gas paths 230 to be described later are respectively connected. 212 includes one or more grooves 211 to which the second electrode 220 is connected, and the second electrode 220 includes one or more plasma injection holes 221 for spraying the plasma formed in the grooves 211 downward. In addition, the second electrode 220 is disposed below the first electrode 210 while facing the lower surface of the first electrode 210, and the first electrode 210 and the second electrode 220 are disposed below the first electrode 210. May have a structure that is coupled to the insulator 260 therebetween.

As a result, the first electrode 210 including the at least one groove 211 and the second electrode disposed below the first electrode 210 while facing the lower surface of the first electrode 210. 220 and one or more cavities in which discharge gas is injected by the insulator 260 coupled to the first electrode 210 and the second electrode 220 and disposed therebetween, thereby generating a plasma ( 240 is formed. The groove 211 forming the cavity 240 may have a cylindrical shape as shown in FIG. 4. However, the shape of the groove 211 is not limited thereto, and may be a hexahedron shape, a concentric column shape, or the like.

The inner surface area of the cavity 240 and the inner surface area of the plasma injection hole 221 may be different depending on the process gas used, the properties of the thin film to be formed, other process conditions, and the like. Those skilled in the art can appropriately select within the scope to achieve the object of the present invention. Preferably, the larger the inner surface area of the cavity 240 and the smaller the inner surface area of the plasma injection hole 221 can generate plasma even at low pressure and low voltage, thereby facilitating plasma generation. For example, the ratio of the inner surface area of the cavity 240 and the inner surface area of the plasma spray hole 221 (cavity inner surface area / plasma spray hole inner surface area) may be 2 to 30.

Since the structure of the cavity 240 increases the plasma generation area and density, not only an efficient deposition process can be performed, but also the plurality of cavities 240 are arranged in parallel to be spaced apart from each other in the plasma generator. The large area of the substrate can be easily achieved.

In addition, the plasma generating apparatus according to the present invention may further include a gas injection unit for receiving a discharge gas from an external gas supply source (not shown) to inject into the cavity 240 of the plasma generating apparatus. Here, the discharge gas may be used argon, helium and the like. As shown in FIG. 4, the gas injection unit may include one or more gas supply passages 231 that receive discharge gas from the gas supply source. Preferably, the gas supply passage 231 may be provided at the upper portion and the lower portion of the gas injection portion, respectively. As a result, it is possible to quickly and smoothly supply gas to the gas injection unit.

In addition, as illustrated in FIG. 4, the gas injection unit may include one or more gas flow paths 230 disposed on the first electrode 210, for example. The gas flow path 230 may be branched and connected to each of the one or more gas injection holes 212 disposed on the first electrode 210. As a result, discharge gas such as argon and helium is supplied from the external gas supply source through the gas supply passage 231, and the supplied gas is transferred along the gas flow path 230 to supply the gas injection hole 212. It is injected into the cavity 240 through the). On the other hand, the configuration of the gas injecting unit is not limited to the embodiment as long as it can supply the discharge gas to the cavity 240 is not particularly limited.

The discharge gas injected into the cavity 240 is converted into a positive ion and an electron in an electric field formed between the first electrode 210 and the second electrode 220 to be plasma-formed through the plasma injection hole 221. The injection is performed again to form a thin film on the substrate by plasmalizing the reaction gas filled in the reaction chamber (100,300). On the other hand, the reaction gas may vary depending on the thin film to be produced. For example, when a thin film is deposited by atomic layer deposition, a raw material such as aluminum, titanium, or zinc, or a silicon material may be used. A reactive gas containing a reactant such as ozone may be used to form a metal oxide film.

As described above, the plasma generating apparatus according to the present invention includes at least one groove 211 under the first electrode 210, the second electrode 22 facing the lower surface of the first electrode, and the Including the at least one cavity 240 formed by the insulator 260 disposed between the first electrode 210 and the second electrode 220 to generate a plasma according to the increase in the plasma generation area and density It improves the deposition efficiency, facilitates the large area of the substrate, and has an excellent effect of suppressing the waste of the reactant plasma compared to the simple showerhead method.

Furthermore, the first electrode 210 includes one or more gas injection holes 212 for supplying discharge gas to each cavity 240 thereon, and the gas flow path 230 constituting the gas injection unit. By injecting the discharge gas into each of the gas injection hole 212 has an effect that can supply a uniform amount of plasma per unit area of the substrate passing through the lower portion of the plasma generator.

5 and 6 illustrate various embodiments of the first electrode 210 and the second electrode 220 constituting the plasma generating apparatus according to the present invention. Specifically, FIGS. 5A to 5C illustrate embodiments of the shape of the second electrode 220 constituting the plasma generator. As shown in FIG. 5A, the second electrode 220 constituting the plasma generating apparatus may have a fan-shaped columnar shape having a fan shape, and a lower surface may be a cylindrical shape as shown in FIG. 5B. As shown in FIG. 5C, the bottom surface may have a rectangular hexahedron shape. The shape of the first electrode 210 may be the same as or different from the shape of the second electrode 220.

6A to 6C illustrate lower portions of the second electrode 220 in a state in which the plasma injection hole 221 is partially disposed in the second electrode 220 in the plasma generator. The cross section of the plasma injection hole 221 included in the second electrode 220 constituting the plasma generator may be a circle, a square, a concentric circle, or the like, as shown in FIGS. 6A to 6C, and the cavity 240 It can be placed at the bottom of each.

The shape, structure, arrangement, etc. of the cavity 240 and the plasma injection hole 221 provided in the plasma generating apparatus according to the present invention are not limited to the embodiments shown in FIGS. In consideration of the properties and the like, a person skilled in the art can appropriately change the range within which the object of the present invention can be achieved.

In particular, the fan shape of the second electrode 220 illustrated in FIGS. 5A and 6A is a preferable shape to be applied to the curved moving section of the substrate in the semi-batch type thin film deposition apparatus or the track type thin film deposition apparatus. In the semi-batch type or track type thin film deposition apparatus, the angular velocity as the substrate moves toward the outer periphery of the curved traveling radius increases in the curved traveling period of the substrate, thereby exposing the substrate to the plasma per unit area of the substrate- The time is reduced, resulting in non-uniformity of the thin film to be formed.

Accordingly, as shown in FIG. 6A, the size of the cavity 210 of the first electrode 210 and the plasma injection hole 221 of the second electrode 220 is increased toward the larger curved radius. It is possible to improve the uniformity of the thin film by artificially increasing the amount of plasma supply to the portion passing through the outer region of the substrate by artificially increasing. Here, the extent to which the size of the cavity 240 and the plasma injection hole 221 increases may be appropriately selected by a person skilled in the art according to the process gas used, the size and moving speed of the substrate, and other process conditions.

7 is an enlarged view of a portion of a first electrode and a second electrode forming one cavity in another embodiment of the plasma generating apparatus according to the present invention. In FIG. 7, the first electrode 210 may correspond to a cathode and the second electrode 220 may correspond to an anode. As shown in FIG. 7, in another embodiment of the plasma generating apparatus according to the present invention, the insulator 260 is formed of the second electrode 220 facing the lower surface of the first electrode 210. The upper surface may be present on the entire surface except for the plasma injection hole 221. As a result, by decreasing the surface area of the second electrode 220 as an anode and rapidly increasing the plasma generation density at the inlet of the plasma injection hole 221, the deposition efficiency may be improved.

FIG. 8 schematically illustrates a state in which plasma is generated in the cavity 240 illustrated in FIG. 7 and supplied to the substrate W through the plasma injection hole 221. In FIG. 8, the anode, the second electrode 220 may be floated. In this case, when the second electrode 220 is floated, process conditions and the like may be controlled by adjusting the potential to adjust the energy of electrons generated by plasma. As described above, the insulator 260 is present on the entire surface of the upper surface of the second electrode 220 opposite to the lower surface of the first electrode 210 except for the plasma injection hole 221. As a result, when the surface area of the second electrode 220 corresponding to the anode is reduced, the plasma generation density rapidly increases at the inlet of the plasma injection hole 221.

This is because a double sheath region is generated at the inlet of the plasma injection hole 221 as shown in FIG. 8. The sheath region refers to a region where electrons or cations are depleted in the plasma region. That is, the double sheath region includes a first sheath region 253 that is depleted of electrons and is positively charged as a whole, and a second sheath region 254 that is negatively charged as a cation is depleted, and thus electrons are discharged from the plasma. It is accelerated toward the injection hole 221 to form a plasma plume (251) on the substrate (W) and the positive ions are accelerated into the cavity 240 to collide with the first electrode corresponding to the cathode secondary Causes electron emission.

As a result, the discharge gas is primarily converted into plasma in the cavity 240 to generate high energy electrons, and the high energy electrons are charged in the reaction chambers 100 and 300 to promote the plasmaation of the reaction gas present on the substrate. . Since the film quality of the thin film generated may be deformed when the discharge gas and the reaction gas are simultaneously mixed in a plasma form, as described above, the plasma thinning of each of the discharge gas and the reaction gas may be sequentially performed. Create and improve the uniformity of the thin film.

While the present invention has been particularly shown and described with reference to preferred embodiments thereof, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined in the following claims. . It is therefore to be understood that the modified embodiments are included in the technical scope of the present invention if they basically include elements of the claims of the present invention.

1000, 2000: thin film deposition apparatus 100, 300: reaction chamber
200: plasma generating unit 380: source gas supply unit
400,700: load lock chamber 500: gas supply source
600: control unit 810, 820: boat
900: substrate inlet /

Claims (16)

A first electrode including a gas injection hole and a groove part connected to the gas injection hole at a bottom thereof;
A second electrode disposed facing the lower surface of the first electrode and including a plasma injection hole and having a different polarity from the first electrode;
An insulator disposed between the first electrode and the second electrode; And
At least one cavity into which a discharge gas is injected into a space formed by each groove portion, the insulator, and the second electrode of the first electrode,
And the discharge gas is converted into plasma between the first electrode and the second electrode. The method of claim 1,
And a ratio of an inner surface area of the cavity to an inner surface area of the plasma injection hole is 2 to 30. 3. The method according to claim 1 or 2,
A power source is applied to one of the first electrode and the second electrode, the other electrode is characterized in that the floating (floating) or grounded, the plasma generating apparatus. The method of claim 3,
Plasma generation, characterized in that the first electrode is a cathode (cathode), the second electrode is an anode (anode), a voltage is applied to the first electrode, the second electrode is floating or grounded Device. 5. The method of claim 4,
And the insulator is present in the entire surface of the upper surface of the second electrode opposite to the lower surface of the first electrode except for the plasma injection hole. 3. The method according to claim 1 or 2,
And the groove portion has a cylindrical shape, a hexahedral shape, or a concentric column shape. 3. The method according to claim 1 or 2,
And a cross section of the plasma injection hole is a circle, a square or a concentric circle. 3. The method according to claim 1 or 2,
A plasma generating apparatus, characterized in that the shape of the second electrode is fan-shaped, cylindrical or hexahedral. 9. The method of claim 8,
The shape of the second electrode is a fan shape, and the size of the groove portion and the plasma injection hole is increased together as the radius of curvature of the fan shape increases toward the larger side. 3. The method according to claim 1 or 2,
Including a gas injection unit for injecting the discharge gas into the cavity,
The gas injection unit includes a gas flow path disposed above the first electrode, wherein the gas flow path is connected to the gas injection hole. The method of claim 3,
Wherein the power source is a direct current power source, an alternating current power source, or a high frequency power source. 3. The method according to claim 1 or 2,
The discharge gas is characterized in that the argon or helium, the plasma generating device. A reaction chamber;
A substrate mounting part disposed inside the reaction chamber and on which a substrate is mounted;
A gas supply unit disposed in the reaction chamber and including a plasma generator according to claim 1; And
And a substrate transfer section for relatively moving the substrate mounting section relative to the gas supply section so as to supply the gas supplied from the gas supply section to the processing surface of the substrate. The method of claim 13,
Wherein the substrate includes a rotation shaft fixed to a lower center of the substrate loading part and a driving motor for rotating the rotation shaft, and the relative movement of the substrate loading part to the gas supply part is a curved movement. . The method of claim 13,
And a driving motor for circulating and moving the power transmitting member connected to the at least one shaft by rotating at least one of the shafts of the at least one of the shafts, Wherein the relative movement of the substrate mount to the gas supply includes linear movement and curvilinear movement. 16. The method according to claim 14 or 15,
The shape of the second electrode included in the plasma generator disposed in a section in which the relative movement with respect to the gas supply part of the substrate mounting part is curved is a fan shape, and the size of the groove part and the plasma injection hole is of the fan shape. Thin film deposition apparatus, characterized in that the curve radius increases toward the larger side.

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