KR20130141233A

KR20130141233A - Household items with surface protection against effusion bio-hazardous materials and manufacturing method thereof and atomic layer deposition method for polymeric materials

Info

Publication number: KR20130141233A
Application number: KR1020120064482A
Authority: KR
Inventors: 심준형; 최병호
Original assignee: 고려대학교 산학협력단
Priority date: 2012-06-15
Filing date: 2012-06-15
Publication date: 2013-12-26

Abstract

The present invention relates to a product and a manufacturing method for preventing elution of harmful substances, and by forming the inorganic thin film layer uniformly without fine pores on the entire surface of the deposition target through the atomic layer thin film deposition process, external exposure to the deposition target is blocked and thus the deposition target This product not only prevents the generation of harmful substances from itself, but also prevents harmful substances from being eluted to the outside, thereby preventing harmful substances from being released into the body and making them safer. Provided are an atomic layer thin film deposition method for a polymer product that forms an inorganic thin film layer through an atomic layer thin film deposition process on a surface thereof.

Description

Hose Items with Surface Protection against Effusion Bio-hazardous Materials and Manufacturing Method Thereof and Atomic Layer Deposition Method for Polymeric Materials

The present invention relates to a hazardous substance dissolution prevention product and a manufacturing method. More specifically, by forming the inorganic thin film layer uniformly without fine pores on the entire surface of the deposition target through the atomic layer deposition process, the external exposure to the deposition target is blocked to prevent the generation of harmful substances from the deposition target itself. In addition, harmful substances are prevented from being released to the outside, and thus harmful substances are not harmful to the human body. An atomic layer thin film deposition method for a polymer product forming a thin film layer.

In modern life, various kinds of household goods are used to make human life easier. These household goods are generally made of metal or polymer products.

Household products made of such metals or polymer products are problematic because various harmful substances such as heavy metals and environmental hormones may be eluted depending on the exposed external environment. For example, in the case of metal household items such as a frying pan or a pan, heavy metals such as chromium may elute when exposed to a specific reactive solution or gas, and a closed container or various kinds of toys made of a polymer may have a specific reactive solution or gas. And when exposed to hot liquids, harmful substances such as environmental hormones can be eluted.

Since these household goods are products that people use very frequently, it will be necessary to manage them in that the harmful effects of the eluted substances on the human body are very large. In recent years, studies have been made to block the dissolution of harmful substances on these household goods, but the situation is not yet satisfactory.

The present invention has been made to solve the problems of the prior art, an object of the present invention is to form an inorganic thin film layer uniformly without fine pores on the entire surface of the deposition target through the atomic layer thin film deposition process, thereby exposing external exposure to the deposition target This blockage prevents not only the generation of harmful substances from the deposition object itself, but also prevents harmful substances from being eluted to the outside, and is therefore harmful to humans. To provide.

Another object of the present invention is to form a chemical functional layer on the surface of the deposition material of the polymer material and then perform an atomic layer thin film deposition process, the inorganic thin film layer on the surface of the deposition object is more actively formed during the atomic layer deposition process harmful substances It is to provide a product and a manufacturing method for preventing the elution of harmful substances that can more safely prevent the external dissolution of.

Another object of the present invention is to form a chemical functional layer on the surface of the product by exposing the polymer product to ultraviolet light or plasma, thereby forming an inorganic thin film layer on the surface of the polymer material through an atomic layer thin film deposition process. An atomic layer thin film deposition method for a polymer product can be provided.

The present invention, the deposition target formed of a metal or polymer material; And an inorganic thin film layer formed in a uniform distribution without pores in the entire area of the surface of the deposition object so as to block external exposure of the surface of the deposition object, wherein the inorganic thin film layer is formed through an atomic layer thin film deposition process, and the deposition is performed. The object provides a harmful substance dissolution prevention product, characterized in that the external thin film is blocked by the inorganic thin film layer, thereby preventing the external dissolution of the harmful substance by a chemical reaction.

In this case, the atomic layer thin film deposition process may be performed at a temperature lower than the melting point or the irreversible phase change temperature of the deposition target.

In addition, when the deposition object is formed of a polymer material, the atomic layer thin film deposition process, after forming a chemical functional layer reactive with the source gas used in the atomic layer thin film deposition process on the surface of the deposition object, The inorganic thin film layer may be formed to be deposited through a chemical functional layer.

In addition, the chemical functional layer may be formed by exposing the surface of the deposition object to ultraviolet rays or plasma.

On the other hand, the present invention, the preparation step of preparing a deposition target formed of a metal or polymer material; Injecting the deposition object into a reaction chamber of an atomic layer thin film deposition apparatus; And operating the atomic layer thin film deposition apparatus to form an inorganic thin film layer with a uniform distribution without pores on the external exposed surface of the deposition target, wherein the deposition target is blocked by external exposure of the surface by the inorganic thin film layer. It provides a method for producing a harmful substance dissolution prevention product, characterized in that the external dissolution of the harmful substance by the chemical reaction is prevented.

In this case, the atomic layer thin film deposition process performed in the deposition step may be performed at a temperature lower than the melting point or the irreversible phase change temperature of the deposition target.

In addition, when the deposition object is formed of a polymer material, it may further comprise a functional layer forming step of forming a chemical functional layer reactive to the source gas used in the atomic layer thin film deposition process on the surface of the deposition object. have.

In addition, the forming of the functional layer may be performed by exposing the surface of the deposition object to ultraviolet rays or plasma.

In addition, the method of exposing the deposition target to plasma may be performed by directly exposing the surface of the deposition target to the plasma or by supplying a radical generated by plasma treatment in a separate plasma chamber to the surface of the deposition target. It can be done in a manner.

In addition, the forming of the functional layer may be performed in a state in which the deposition object is introduced into the reaction chamber or separately before injecting into the reaction chamber.

The present invention, a preparation step of preparing a deposition target formed of a polymer material; Forming a functional layer reactive with a source gas used in the atomic layer thin film deposition process on a surface of the deposition object; And a deposition step of forming an inorganic thin film layer in a uniform distribution without pores on the external exposed surface of the deposition object on which the chemical functional layer is formed, by the inorganic thin film layer. A method of depositing an atomic layer thin film for a polymer product, characterized in that the exposure is blocked.

In this case, the forming of the functional layer may be performed by exposing the surface of the deposition object to ultraviolet rays or plasma.

According to the present invention, by forming the inorganic thin film layer uniformly without micro pores on the entire surface of the deposition target through the atomic layer deposition process, the external exposure to the deposition target is blocked to prevent the generation of harmful substances from the deposition target itself. In addition, the harmful substances are also prevented from being eluted to the outside, and accordingly, various household items are effective to be used more safely in a harmless state to the human body.

In addition, by forming a chemical functional layer on the surface of the deposition material of the polymer material and performing an atomic layer thin film deposition process, an inorganic thin film layer on the surface of the deposition object is more actively formed during the atomic layer thin film deposition process, thereby It is effective to prevent external dissolution more safely.

In addition, by forming a chemical functional layer on the surface of the product by exposing the polymer product to ultraviolet rays or plasma, it is possible to smoothly form the inorganic thin film layer through the atomic layer deposition process on the surface of the polymer material have.

In addition, by forming an inorganic thin film layer uniformly without fine pores through the atomic layer thin film deposition process on the surface of the polymer material, it is possible to completely block the external exposure of the surface of the polymer product, so that the polymer product is a reactive solution or gas Exposure to the back is blocked, preventing the formation or dissolution of harmful substances such as environmental hormones, thereby enabling the use of safer products.

1 exemplarily shows a form of a hazardous substance dissolution prevention product according to an embodiment of the present invention;
2 and 3 is a view showing a deposition structure compared to other processes through the atomic layer thin film deposition process according to an embodiment of the present invention,
4 is a view for conceptually explaining the deposition principle of the atomic layer thin film deposition process according to an embodiment of the present invention,
5 is a view conceptually showing a configuration of an atomic layer thin film deposition apparatus according to an embodiment of the present invention;
6 is a view showing the results of experiments in the state of change of the chemical functional layer according to the plasma treatment time for the deposition target according to an embodiment of the present invention,
7 is a view showing an experimental result of the formation state of the inorganic thin film layer according to the formation of the chemical functional layer according to an embodiment of the present invention,
8 is a flowchart illustrating a method of manufacturing a hazardous substance dissolution prevention product according to an embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the drawings, the same reference numerals are used to designate the same or similar components throughout the drawings. In the following description of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear.

1 is a view showing an exemplary form of a hazardous substance dissolution prevention product according to an embodiment of the present invention, Figures 2 and 3 is a deposition structure through an atomic layer thin film deposition process according to an embodiment of the present invention Figure 4 is a view showing in comparison with other processes, Figure 4 is a view for conceptually explaining the deposition principle of the atomic layer thin film deposition process according to an embodiment of the present invention, Figure 5 according to an embodiment of the present invention It is a figure which shows the structure of an atomic layer thin film deposition apparatus conceptually.

Hazardous substance elution prevention product according to an embodiment of the present invention is configured in such a way that the inorganic thin film layer 200 is formed on the external exposed surface of the deposition target 100, such as household goods formed of a metal or polymer material, The surface of the 100 is blocked from the outside by the inorganic thin film layer 200, thereby preventing the external elution of harmful substances.

In this case, the inorganic thin film layer 200 is deposited by an atomic layer thin film deposition process. The atomic layer thin film deposition process is mainly used in the semiconductor manufacturing process of the state of the art, it is applied to form a coating layer of the general household goods according to an embodiment of the present invention, to prevent the harmful substances of the household goods from being eluted to the outside can do.

Atomic Layer Deposition (ALD) is a method of forming a thin film having a small thickness in atomic layer units. The reactant is chemically reacted by separately injecting each reactant into a substrate (wafer). It is a method of forming a thin film by repeating the reaction cycle saturated and adsorbed several times.

The ALD process is a type of chemical vapor deposition (CVD), and unlike physical vapor deposition (PVD), the wafer and the thin film are bonded by chemical reaction and chemical bonding. Therefore, the thin film and the wafer are combined with a strong binding force as if they were a single material. Also, unlike other CVD processes (more than 800 degrees Celsius), the ALD process can deposit inorganic thin films, such as ceramics or metals, at low temperatures (less than 100 degrees Celsius), thus allowing inorganic thin films to be deposited on low melting polymers. In addition, since the ALD process can deposit a film having a thickness of one atomic layer or less per cycle, ultra-thin deposition of 1 nm or less is possible, and multi-component materials can be deposited by varying types of sources per cycle. In addition, since the deposition process is performed on all surfaces capable of chemical reaction regardless of the injection direction and concentration of the source, the ALD process enables uniform film deposition along the surface even on a fine and complex shape surface.

Referring to the deposition process of the ALD process, as shown in FIG. 4, when the A material (P1) reactant is supplied to the reaction chamber, the A material (P1) reactant reacts with the surface of the deposition target 100 to be chemisorbed. When the substance A (P1) reactant is deposited in the atomic layer on the surface of the deposition object, even if a large amount of the substance A (P1) reactant is supplied by the self-limiting reaction, the reaction is no longer performed. A substance (P1) in the state that the reactants no longer react using A substance (P1) purge gas to remove the A substance (P1) to the outside. Subsequently, if the B substance (P2) reactant is supplied in the same manner as the A substance (P1), the A substance (P1) and the B substance (P2) react with each other and are chemically adsorbed. do. At this time, remove the B substance (P2) to the outside through the removal gas. This process is called 1 cycle, and the cycle is repeated to deposit a film of a desired thickness. At this time, each reactant is deposited on the surface of the deposition object 100 in a uniform distribution without pores due to the nature of the deposition principle, and thus the surface of the deposition object 100 is more completely blocked external exposure.

As shown in FIG. 5, the atomic layer thin film deposition apparatus 10 performing the ALD process includes a reaction chamber 60 in which a deposition target 100 is mounted, and the reaction chamber 60 includes a reaction chamber ( A suction pump 20 that sucks the internal space so that the internal space of the 60 is in a vacuum state is connected through the pump pipe 21. Meanwhile, a source gas tank 42 and a delivery gas tank 30 are provided to deliver the source gas to the reaction chamber 60, and a purge gas tank 50 is provided to deliver the purge gas to the reaction chamber 60. It is provided. The delivery gas tank 30 and the source gas tank 42 are interconnected through the delivery gas pipe 41, and the source gas tank 42 is connected with the reaction chamber 60 through the source gas pipe 43. The delivery gas on-off valve 44 and the source gas on-off valve 45 are mounted to the delivery gas pipe 41 and the source gas pipe 43, respectively. The purge gas tank 50 is connected to the reaction chamber 60 in a manner that is connected to the source gas pipe 43 through the purge gas pipe 51.

According to this structure, the delivery gas from the delivery gas tank 30 flows into the source gas tank 42 through the delivery gas piping 41, and then the delivery gas and the source gas from the source gas tank 42 are source gas piping ( 43 is supplied to the reaction chamber 60. After the source gas is supplied to the reaction chamber 60 as described above, the delivery gas open / close valve 44 and the source gas open / close valve 45 are closed to shut off the supply of the source gas, and the purge gas tank 50 is purged. The gas is supplied to the reaction chamber 60 through the purge gas pipe 51. Thereafter, the source gas of another source gas tank 42 is supplied to the reaction chamber 60 in this manner, and then the purge gas is supplied to the reaction chamber 60 again. In this way, a plurality of source gases are supplied to form a plurality of atomic layer thin films. At this time, the reason for supplying the purge gas to the reaction chamber 60 is to remove all the source gas existing in the space of the reaction chamber 60 after any one source gas is supplied to the reaction chamber 60 to cause a reaction. In this way, after all the used source gas is removed in this way, the new source gas is supplied again.

Of course, the atomic layer thin film deposition apparatus 10 is an example, and the piping structure for supplying the source gas and the like can be changed in various ways.

The hazardous substance dissolution prevention product 1 according to the present invention is configured in such a manner that the inorganic thin film layer 200 is formed on the deposition target 100 through the atomic layer thin film deposition process by the atomic layer thin film deposition apparatus 10.

The deposition target 100 is a variety of household goods formed of a metal or a polymer material, as shown in Figure 1 (a) of various storage containers formed of a polymer material or as shown in (b) of FIG. Various household goods such as a frying pan formed of a metal material may be applied.

As described above, the inorganic thin film layer 200 is deposited through an atomic layer thin film deposition process, and is formed in a uniform distribution without pores in the entire area of the surface of the deposition target 100 so as to block external exposure of the surface of the deposition target 100. do.

In this case, the atomic layer thin film deposition process for forming the inorganic thin film layer 200 is preferably performed at a temperature lower than the melting point or the irreversible phase change temperature of the deposition target 100. That is, when the deposition target 100 is a polymer material, when the inorganic thin film layer 200 is formed on the deposition target 100 by being exposed to high temperature heat, the deposition target may be deformed in shape, color, etc. As a result, the deposition process is preferably performed at a low temperature. The atomic layer deposition process can deposit an inorganic thin film at a low temperature of less than 100 degrees Celsius, it can be safely applied to the deposition target of the polymer material.

2 and 3 illustrate the structure of the inorganic thin film layer 200 through the atomic layer deposition process compared with other processes. In the general spray method shown in FIG. 2A, the inorganic thin film layer 200 is illustrated. The density of the micropores is not high and the external blocking effect on the surface of the deposition target 100 is not high. Similarly, in the PVD process illustrated in FIG. 2B or the CVD process illustrated in FIG. 2C, the inorganic thin film layer 200 is formed only on a part of the surface of the deposition target 100 depending on the direction of reactants. . In the atomic layer deposition process (ALD), as shown in (d) of FIG. 2, the inorganic thin film layer 200 is formed without fine pores with a uniform distribution on the entire surface of the deposition target 100 due to the characteristics of the deposition method.

Accordingly, in the spray method or the PVD method, as shown in FIGS. 3A and 3B, micropores are formed in the inorganic thin film layer 200 or portions where the inorganic thin film layer 200 is not formed are generated. Therefore, the harmful substance may be eluted to the outside from the deposition object 100 through this.

However, in the atomic layer deposition process method, as shown in FIG. 3C, since the inorganic thin film layer 200 is uniformly formed without fine pores on the entire surface of the deposition object 100, it is harmful from the deposition object 100. The substance is prevented from eluting to the outside. In particular, since the inorganic thin film layer 200 blocks the contact between the deposition object 100 and the external environment, generation of harmful substances by chemical reactions is prevented. That is, the deposition target material 100 of the metal or polymer material reacts with it when it is exposed to a reactive solution or gas to generate harmful substances such as heavy metals or environmental hormones, and the deposition target 100 according to an embodiment of the present invention. Since the inorganic thin film layer 200 is formed on the surface of the inorganic thin film layer 200, the exposure of contact with the reactive solution or the gas is blocked, thereby preventing the generation of harmful substances. Of course, even when harmful substances are produced, the function of preventing the external substances from being eluted is also performed.

On the other hand, when the deposition target 100 is formed of a polymer material, in particular, a polymer of a kind including polyethylene (Polyethylene) may not be smooth due to the weak reactivity with the source gas in the atomic layer thin film deposition process.

Therefore, in the atomic layer deposition process, after forming a chemical functional layer reactive with the source gas on the surface of the deposition object 100 according to an embodiment of the present invention, the inorganic thin film layer 200 is smoothly formed through the chemical functional layer. It is preferably carried out so as to form a deposition.

In this case, a method of forming the chemical functional layer may be a method of exposing the surface of the deposition target 100 to ultraviolet rays or plasma. The method of exposing the plasma may be performed by directly exposing the surface of the deposition object 100 to the plasma or supplying radicals generated by plasma treatment in a separate plasma chamber (not shown) to the surface of the deposition object 100. Remote plasma method can be performed.

6 illustrates a state change of the chemical functional layer formed on the surface of the deposition object according to the change in the exposure time when the surface of the deposition object is exposed to the plasma. For example, as shown in FIG. 6, as the plasma treatment time on the surface of the deposition object 100 increases, the water contact angle decreases, which indicates that the chemical functional layer is more actively generated as the plasma treatment time increases. This means that the deposition of the inorganic thin film layer 200 may be more smoothly performed during the atomic layer thin film deposition process.

In FIG. 7A, a photograph of a state in which the inorganic thin film layer 200 is formed through an atomic layer thin film deposition process without a chemical functional layer formed on the surface of the deposition target 100 is shown, and FIG. 7B. The photo shows a state in which the inorganic thin film layer 200 is formed through an atomic layer thin film deposition process with a chemical functional layer formed on the surface of the deposition target 100.

As can be seen in the photograph of FIG. 7, as the chemical functional layer is formed on the surface of the deposition target 100, the inorganic thin film layer 200 may be very active through the atomic layer deposition process.

8 is a flowchart illustrating a method of manufacturing a hazardous substance dissolution prevention product according to an embodiment of the present invention.

The present invention provides a method for producing a hazardous substance dissolution prevention product, which is carried out in the manner described above.

That is, first, after the preparation step (S1) to prepare a deposition target 100 formed of a metal or polymer material, and then put the deposition target 100 in the reaction chamber 60 of the atomic layer thin film deposition apparatus 10 After the input step S3, the atomic layer thin film deposition apparatus 10 is operated to form the inorganic thin film layer 200 with a uniform distribution without pores on the external exposed surface of the deposition target 100 (S4).

In this case, when the deposition object 100 is formed of a polymer material, a functional layer forming step (S2) of forming a chemical functional layer reactive with a source gas used in an atomic layer thin film deposition process on the surface of the deposition object 100 is performed. Can be rougher. The functional layer forming step S2 may be performed separately before the deposition object 100 is introduced into the reaction chamber 60. Alternatively, the functional layer formation step S2 may be performed after the deposition object 100 is introduced into the reaction chamber 60. 60) may be carried out by exposure to ultraviolet rays or plasma inside.

In addition, the functional layer forming step (S2) may be performed in a manner (S2-1, S2-2) to expose the deposition object 100 to ultraviolet rays or plasma as described above, the method of exposing to the plasma is The method may be performed by directly exposing the surface of 100 to plasma or by a remote plasma method of supplying radicals generated by plasma treatment to a surface of the deposition target 100 in a separate plasma chamber (not shown). .

Meanwhile, the atomic layer thin film deposition process performed in the deposition step S4 is preferably performed at a temperature lower than the melting point or the irreversible phase change temperature of the deposition target 100.

By forming the inorganic thin film layer 200 on the surface of the deposition object 100 in the manner described above, as described above, the external exposure of the deposition object 100 is blocked, thereby preventing the external elution of harmful substances.

On the other hand, the present invention provides an atomic layer thin film deposition method for a polymer product. As described above, the polymer-based product is formed with very few inorganic thin film layers or very finely formed on the surface of the product through a general atomic layer thin film deposition process. Therefore, it is preferable to form a chemical functional layer reactive with the source gas used in the atomic layer thin film deposition process on the surface of the polymer material, and then perform the atomic layer thin film deposition process. In this case, the chemical functional layer may be performed by exposing the surface of the polymer deposition target to ultraviolet rays or plasma, and the inorganic functional thin film layer may be very active on the surface of the product by the atomic layer thin film process. Happens.

The above description is merely illustrative of the technical idea of the present invention, and those skilled in the art to which the present invention pertains may make various modifications and variations without departing from the essential characteristics of the present invention. Therefore, the embodiments disclosed in the present invention are intended to illustrate rather than limit the scope of the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. The scope of protection of the present invention should be construed according to the following claims, and all technical ideas falling within the scope of the same shall be construed as falling within the scope of the present invention.

10: atomic layer thin film deposition apparatus 60: reaction chamber
100: deposition target 200: inorganic thin film layer

Claims

A deposition target formed of a metal or polymer material; And
Inorganic thin film layer formed in a uniform distribution without pores in the entire surface area of the deposition object to block external exposure of the surface of the deposition object
It includes, wherein the inorganic thin film layer is formed by deposition through an atomic layer thin film deposition process, the deposition object is blocked by external exposure of the surface by the inorganic thin film layer, characterized in that the external elution of harmful substances by chemical reaction is prevented Harmful substance elution prevention product.

The method of claim 1,
The atomic layer thin film deposition process is carried out at a temperature lower than the melting point or the irreversible phase change temperature of the deposition target product.

3. The method of claim 2,
When the deposition object is formed of a polymer material,
The atomic layer thin film deposition process is performed to form a chemical functional layer reactive with a source gas used in the atomic layer thin film deposition process on the surface of the deposition object, and then deposit the inorganic thin film layer through the chemical functional layer. Hazardous substance dissolution prevention product, characterized in that.

The method of claim 3, wherein
Hazardous substance dissolution prevention product, characterized in that for forming the chemical functional layer by exposing the surface of the deposition object to ultraviolet or plasma.

A preparation step of preparing a deposition target formed of a metal or a polymer material;
Injecting the deposition object into a reaction chamber of an atomic layer thin film deposition apparatus; And
Deposition step of operating the atomic layer thin film deposition apparatus to form an inorganic thin film layer in a uniform distribution without pores on the external exposed surface of the deposition object
The method of claim 1, wherein the deposition target is blocked by external exposure of the surface by the inorganic thin film layer, thereby preventing the external elution of harmful substances by chemical reaction.

The method of claim 5, wherein
The atomic layer thin film deposition process performed in the deposition step is a method for producing a hazardous substance dissolution prevention product, characterized in that carried out at a temperature lower than the melting point or the irreversible phase change temperature of the deposition object.

The method according to claim 6,
When the deposition object is formed of a polymer material,
And a functional layer forming step of forming a chemical functional layer reactive with a source gas used in the atomic layer thin film deposition process on the surface of the deposition target.

The method of claim 7, wherein
The functional layer forming step is a method for producing a hazardous substance dissolution prevention product, characterized in that the method is performed by exposing the surface of the deposition object to ultraviolet light or plasma.

The method of claim 8,
The method of exposing the deposition object to plasma
Emission prevention of harmful substances, characterized in that performed by the method of directly exposing the surface of the deposition object to the plasma or by a remote plasma method for supplying the radicals generated by the plasma treatment in a separate plasma chamber to the surface of the deposition object. Method of manufacture of the product.

The method of claim 8,
The functional layer forming step may be performed in a state in which the deposition object is put into the reaction chamber or separately before adding to the reaction chamber.

A preparation step of preparing a deposition target formed of a polymer material;
Forming a functional layer reactive with a source gas used in the atomic layer thin film deposition process on a surface of the deposition object; And
Deposition step of forming an inorganic thin film layer in a uniform distribution without pores through the atomic layer thin film deposition process on the external exposed surface of the deposition object on which the chemical functional layer is formed
The method of claim 1, wherein the deposition target is an atomic layer thin film deposition method for a polymer product, characterized in that the external exposure of the surface is blocked by the inorganic thin film layer.

The method of claim 11,
Wherein the forming of the functional layer is performed by exposing the surface of the deposition object to ultraviolet light or plasma.