KR20130135142A - Organic electronic device - Google Patents

Abstract

The present invention relates to an organic electronic device, a manufacturing method of the organic electronic device and a lighting. In the present invention, the organic electronic device is provided which has a structure of connecting an encapsulation layer protecting a device and the device electrically. The encapsulation layer can be connected to an external power source, and can emit heat generated from the device to the outside effectively by showing proper thermal conductivity characteristics in case of necessity. The organic electronic device of the present invention can have more excellent reliability than the previous one, and can be manufactured by a simple process.

Description

Organic Electronic Device {ORGANIC ELECTRONIC DEVICE}

The present application relates to an organic electronic device, a method for manufacturing an organic electronic device, and an illumination.

An organic electronic device (OED) is a device comprising one or more layers of organic materials capable of conducting current. The organic electronic device includes an organic light emitting diode (OLED), an organic solar cell, an organic photoconductor (OPC), or an organic transistor.

An organic light emitting device, which is a representative organic electronic device, typically includes a substrate, a first electrode layer, an organic layer, and a second electrode layer sequentially. In a structure referred to as a so-called bottom emitting device, the first electrode layer may be formed of a transparent electrode layer, and the second electrode layer may be formed of a reflective electrode layer. In a structure referred to as a top emitting device, the first electrode layer may be formed as a reflective electrode layer, and the second electrode layer may be formed as a transparent electrode layer. Electrons and holes injected by the electrode layer can be recombined in the light emitting layer existing in the organic layer to generate light.

1 and 2 is an exemplary view showing the structure of a representative conventional organic light emitting device. In FIG. 1, an element having a structure in which a first electrode layer (not shown), an organic layer 2, and a second electrode layer 3 are sequentially formed on the substrate layer 1 is provided, and the device includes a spacer 4 and a glass cap ( The structure protected by the encapsulation structure including 5) is shown, and in FIG. 2, the base layer 1, the first electrode layer (not shown), the organic layer 2, and the second electrode layer 3 are sequentially formed. The structure in which the front side of the structure in which it is protected by the encapsulation layer 6 is shown.

In order to drive the organic electronic device, it is necessary to apply an external power source through the first electrode layer and the second electrode layer. Thus, in the structures of FIGS. 1 and 2, both of the second electrode layers 3 extend outside the encapsulation structure.

The present application provides an organic electronic device, a method of manufacturing an organic electronic device, and an illumination.

Exemplary organic electronic devices include a substrate layer; An element (organic electronic element) formed on the base layer and an encapsulation layer protecting the element may be included. In the above, the device includes at least a first electrode layer and an organic layer which are sequentially stacked from the base layer side. The device may further include a second electrode layer, which will be described later, formed on the organic layer if necessary. The organic electronic device may be an organic light emitting device, and in this case, the organic layer may include at least a light emitting layer.

As the base layer in the organic electronic device, a suitable material may be used without particular limitation. For example, when the device is used as a bottom emission type device, a light transmissive base layer, for example, a base layer having a transmittance of 50% or more with respect to light in the visible light region may be used. As a light transmissive base material layer, a glass base material layer, a transparent polymer base material layer, etc. can be illustrated. Examples of the glass base layer include base layers such as soda lime glass, barium / strontium-containing glass, lead glass, aluminosilicate glass, borosilicate glass, barium borosilicate glass, or quartz, and as the polymer base layer, PI ( Substrate layers including polyimide, polyethylene naphthalate (PEN), polycarbonate (PC), acrylic resin, poly (ethylene terephthatle) (PET), poly (ether sulfide) (PES) or polysulfone (PS) may be exemplified. However, the present invention is not limited thereto. The base layer may be a TFT substrate on which a driving TFT exists. When the substrate is applied to a top emission type device, the base layer does not necessarily need to be a light transmissive base layer. If necessary, a reflective layer made of aluminum or the like may be formed on the surface of the substrate layer or the like.

In the organic electronic device, the first electrode layer may be, for example, a hole injection or electron injection electrode layer commonly used in an organic electronic device. For example, when the encapsulation layer or the second electrode layer to be described later serves as an electron injecting electrode layer, the first electrode layer may be a hole injecting electrode layer, and the encapsulation layer or the second electrode layer to be described later is a hole injection property. When acting as an electrode layer, the first electrode layer may be an electron injection electrode layer.

The electrode layer capable of injecting holes can be formed using, for example, a material having a relatively high work function, and can be formed using a transparent material when necessary. For example, the hole-injecting electrode layer may comprise a metal, an alloy, an electrically conductive compound or a mixture of two or more thereof having a work function of about 4.0 eV or more. As such a material, metal such as gold, CuI, indium tin oxide (ITO), indium zinc oxide (IZO), zinc tin oxide (ZTO), zinc oxide doped with aluminum or indium, magnesium indium oxide, nickel tungsten oxide, Metal oxides such as ZnO, SnO ₂ or In ₂ O ₃ , metal serrides such as gallium nitride and zinc selenide, and metal sulfides such as zinc sulfide. The transparent positive hole injecting electrode layer can also be formed using a metal thin film of Au, Ag or Cu and a laminate of a transparent material of high refractive index such as ZnS, TiO ₂ or ITO.

The hole injecting electrode layer may be formed by any means such as vapor deposition, sputtering, chemical vapor deposition or electrochemical means. In addition, the electrode layer formed according to need may be patterned through a process using known photolithography, shadow mask, or the like.

The electron injecting transparent electrode layer can be formed using, for example, a transparent material having a relatively small work function. For example, a material suitable for forming the hole injecting electrode layer can be formed using a suitable material But is not limited thereto. The electron injecting electrode layer can also be formed using, for example, a vapor deposition method or a sputtering method, and can be appropriately patterned when necessary.

The thickness of the electrode layer as described above is not particularly limited, but may be, for example, formed to have a thickness of about 90 nm to 200 nm, 90 nm to 180 nm, or about 90 nm to 150 nm.

An organic layer is formed on the first electrode layer. The organic layer may be a single layer structure or a multilayer structure. The material for forming the organic layer is not particularly limited and may be appropriately selected in consideration of the use of the device and the like.

For example, when the device is an organic light emitting device, the organic layer may include at least one light emitting layer. The organic layer may include a plurality of light emitting layers of two or more layers. When two or more light emitting layers are included, the light emitting layers may have a structure in which the light emitting layers are divided by an intermediate electrode layer having charge generating characteristics, a charge generating layer (CGL) or the like.

The light-emitting layer can be formed, for example, by using various fluorescent or phosphorescent organic materials known in the art. Examples of the material of the light emitting layer include tris (4-methyl-8-quinolinolate) aluminum (III) (tris (4-methyl-8-quinolinolate) aluminum (III)) (Alg3), 4-MAlq3 or Gaq3. Alq series materials, C-545T (C ₂₆ H ₂₆ N ₂ O ₂ S), DSA-amine, TBSA, BTP, PAP-NPA, Spiro-FPA, Ph ₃ Si (PhTDAOXD), PPCP (1,2,3 Cyclopenadiene derivatives such as, 4,5-pentaphenyl-1,3-cyclopentadiene), DPVBi (4,4'-bis (2,2'-diphenylyinyl) -1,1'-biphenyl), distyryl Benzene or derivatives thereof or DCJTB (4- (Dicyanomethylene) -2-tert-butyl-6- (1,1,7,7, tetramethyljulolidyl-9-enyl) -4H-pyran), DDP, AAAP, NPAMLI; Or Firpic, m-Firpic, N-Firpic, bon ₂ Ir (acac), (C ₆ ) ₂ Ir (acac), bt ₂ Ir (acac), dp ₂ Ir (acac), bzq ₂ Ir (acac), bo _{2 Ir (acac), F 2} Ir (bpy), F 2 Ir (acac), op 2 Ir (acac), ppy 2 Ir (acac), tpy 2 Ir (acac), FIrppy (fac-tris [2- ( 4,5'-difluorophenyl) pyridine-C'2, N] iridium (III)) or Btp ₂ Ir (acac) (bis (2- (2'-benzo [4,5-a] thienyl) pyridinato-N, Phosphorescent materials such as C3 ') iridium (acetylactonate)) and the like can be exemplified, but is not limited thereto. The light emitting layer may contain the above material as a host and may also include perylene, distyrylbiphenyl, DPT, quinacridone, rubrene, BTX, ABTX or DCJTB. And may have a host-dopant system including a dopant.

The light-emitting layer can be formed by suitably employing a kind that exhibits luminescence characteristics among electron-accepting organic compounds or electron-donating organic compounds described below.

The organic layer in the organic light emitting device may be formed in various structures further including other various functional layers known in the art, as long as the organic layer includes the light emitting layer. Examples of the layer that can be included in the organic layer include an electron injecting layer, a hole blocking layer, an electron transporting layer, a hole transporting layer, and a hole injecting layer.

The electron injection layer or the electron transport layer can be formed using, for example, an electron accepting organic compound. As the electron-accepting organic compound in the above, any known compound can be used without any particular limitation. Examples of such organic compounds include polycyclic compounds or derivatives thereof such as p-terphenyl or quaterphenyl, naphthalene, tetracene, pyrene, coronene, ), Polycyclic hydrocarbon compounds or derivatives thereof such as chrysene, anthracene, diphenylanthracene, naphthacene or phenanthrene, phenanthroline, Heterocyclic compounds or derivatives thereof such as bathophenanthroline, phenanthridine, acridine, quinoline, quinoxaline, or phenazine may be exemplified. It is also possible to use at least one of fluoroceine, perylene, phthaloperylene, naphthaloperylene, perynone, phthaloferrinone, naphthoferrinone, diphenylbutadiene ( diphenylbutadiene, tetraphenylbutadiene, oxadiazole, aldazine, bisbenzoxazoline, bisstyryl, pyrazine, cyclopentadiene, and the like. Oxine, aminoquinoline, imine, diphenylethylene, vinyl anthracene, diaminocarbazole, pyrane, thiopyrane, polymethine, Quinacridone or rubrene or derivatives thereof, Japanese Patent Application Laid-Open No. 1988-295695, Japanese Patent Application Laid-Open No. 1996-22557, Japanese Patent Application Laid-Open No. 1996-81472, Japanese Patent Application Laid-Open No. 1993-009470 or Japanese Patent Application Laid- For example, tris (8-quinolinolato) aluminum, a metal chelated oxanoid compound, bis (8-quinolinolato) aluminum, Bis (benzo (f) -8-quinolinolato] zinc}, bis (2-methyl-8-quinolinolato) aluminum, Tris (8-quinolinolato) indium], tris (5-methyl-8-quinolinolato) aluminum, 8- quinolinolato lithium, tris (5- Quinolinolato) gallium, bis (5-chloro-8-quinolinolato) calcium and the like, metal complexes having at least one of 8-quinolinolato or a derivative thereof as an arbiter, Japanese Patent Laid- Oxadiazole compounds disclosed in Japanese Patent Application Laid-Open Nos. 1995-179394, 1995-278124, and 1995-228579, Stilbene derivatives, distyrylarylene derivatives, and the like disclosed in Japanese Patent Application Laid-Open (kokai) No. 1994-132080 Styryl derivatives disclosed in JP-A-1994-88072 and the like, diolefin derivatives disclosed in JP-A-1994-100857 and JP-A-1994-207170, and the like; Fluorescent brightening agents such as benzooxazole compounds, benzothiazole compounds or benzoimidazole compounds; Bis (4-methylstyryl) benzene, distyrylbenzene, 1,4-bis (2-methylstyryl) benzene, Bis (2-methylstyryl) benzene, 1,4-bis (3-ethylstyryl) benzene, Methylstyryl) -2-ethylbenzene, and the like; Bis (4-methylstyryl) pyrazine, 2,5-bis (4-methylstyryl) pyrazine, 2,5- Bis [2- (4-biphenyl) vinyl] pyrazine such as bis (4-methoxystyryl) pyrazine, 2,5-bis [2- Distyrylpyrazine compounds, 1,4-phenylenedimethylidene, 4,4'-phenylenedimethylidyne, 2,5-xylenedimethylidyne, 2,6-naphthylenedimethylidyne, 1,4-biphenylene dimethyl (9,10-anthracenediyldimethylidine) or 4,4 '- (2,2-di-t-butylphenylvinyl) biphenyl , Dimethylidine compounds such as 4,4 '- (2,2-diphenylvinyl) biphenyl and derivatives thereof, silane disclosed in Japanese Patent Application Laid-Open No. 1994-49079 or Japanese Patent Application Laid-Open No. 1994-293778 Silanamine derivatives, Japanese Patent Application Laid-Open No. 1994-279322 or Japanese Patent Laid-Open Publication No. 1994-279323 Oxadiazole derivatives disclosed in Japanese Patent Laid-Open Publication No. 1994-109264, Japanese Patent Laid-Open Publication No. 1994-206865 and the like, an anthracene compound disclosed in Japanese Patent Oxynate derivatives disclosed in JP-A-1994-145146 and the like, tetraphenylbutadiene compounds disclosed in JP-A-1992-96990 and the like, organic trifunctional compounds disclosed in JP-A-1991-296595, Coumarin derivatives disclosed in JP-A-1990-191694 and the like, perylene derivatives disclosed in JP-A-1990-196885 and the like, naphthalene derivatives disclosed in JP-A-1990-255789, Phthaloperynone derivatives disclosed in JP-A No. 1990-289676 or JP-A No. 1990-88689 or a derivative of phthaloperynone derivatives disclosed in JP-A No. 1990-25029 Styrylamine derivatives disclosed in, for example, Japanese Patent Laid-open Publication No. 2 (1990) can also be used as electron-accepting organic compounds contained in the low refractive layer. In addition, the electron injection layer may be formed using a material such as LiF or CsF.

The hole blocking layer prevents the injected holes from entering the electron injecting electrode layer through the light emitting layer to improve the lifetime and efficiency of the device. If necessary, the hole blocking layer can be formed using a known material, As shown in FIG.

The hole injecting layer or the hole transporting layer may include, for example, an electron donating organic compound. Examples of the electron donating organic compound include N, N ', N'-tetraphenyl-4,4'-diaminophenyl, N, N'-diphenyl-N, N'-di (3-methylphenyl) -4, 4'-diaminobiphenyl, 2,2-bis (4-di-p-tolylaminophenyl) propane, N, N, N ', N'-tetra-p-tolyl-4,4'-diamino ratio Phenyl, bis (4-di-p-tolylaminophenyl) phenylmethane, N, N'-diphenyl-N, N'-di (4-methoxyphenyl) -4,4'-diaminobiphenyl, N , N, N ', N'-tetraphenyl-4,4'-diaminodiphenylether, 4,4'-bis (diphenylamino) quadriphenyl [4,4'-bis (diphenylamino) quadriphenyl], 4-N, N-diphenylamino- (2-diphenylvinyl) benzene, 3-methoxy-4 ', N, N-diphenylaminosteelbenzene, N-phenylcarbazole, 1,1-bis (4 -Di-p-triaminophenyl) cyclohexane, 1,1-bis (4-di-p-triaminophenyl) -4-phenylcyclohexane, bis (4-dimethylamino-2-methylphenyl) phenylmethane , N, N, N-tri (p-tolyl) amine, 4- (di-p-tolylamino) -4 '-[4- (di-p-tolylamino) styryl] stilbene, N, N, N ', N'-tetraphenyl-4,4'-diamino ratio N-phenylcarbazole, 4,4'-bis [N- (1-naphthyl) -N-phenylamino] biphenyl, Phenylamino] biphenyl, 4,4'-bis [N- (3-acenaphthenyl) -N (2-naphthyl) Phenylamino] biphenyl, 1,5-bis [N- (1-naphthyl) -N-phenylamino] naphthalene, 4,4'- Bis [N- (2-phenanthryl) -biphenylphenylamino] biphenyl, 4,4'-bis [N- N-phenylamino] biphenyl, 4,4'-bis [N- (2-pyrenyl) - N-phenylamino] biphenyl, 4,4'-bis [N- (1-choronenyl) - N-phenylamino] biphenyl), 2,6-bis (di-p-tolylamino) naphthalene, 2,6-bis (1-naphthyl) amino] naphthalene, 2,6-bis [N- (1-naphthyl) Bis [N, N-di (2-naphthyl) amino] terphenyl, 4,4'-bis { Bis [N, N-di- (2-naphthyl) amino] fluorene or 4,4'-bis (N, N-di-p-tolylamino) terphenyl and bis (N-1-naphthyl) (N-2-naphthyl) amine and the like are exemplified. It is not.

The hole injecting layer or the hole transporting layer may be formed by dispersing an organic compound in a polymer or by using a polymer derived from the organic compound. Also, such as polyparaphenylene vinylene and derivatives thereof, so-called π conjugated polymers, hole transporting non-conjugated polymers such as poly (N-vinylcarbazole), or σ conjugated polymers of polysilane may be used.

The hole injection layer may be formed by using a metal phthalocyanine such as copper phthalocyanine, a nonmetal phthalocyanine, a carbon film and an electrically conductive polymer such as polyaniline, or by reacting the arylamine compound with an Lewis acid using the arylamine compound as an oxidizing agent You may.

Illustratively, the organic light emitting device includes (1) a form of a hole injection electrode layer / an organic light emitting layer / electron injecting electrode layer formed sequentially; (2) a form of a hole injection electrode layer / a hole injection layer / an organic light emitting layer / an electron injection electrode layer; (3) a form of a hole injection electrode layer / an organic light emitting layer / an electron injection layer / an electron injection electrode layer; (4) a form of a hole injection electrode layer / a hole injection layer / an organic light emitting layer / an electron injection layer / an electron injection electrode layer; (5) a form of a hole injection electrode layer / an organic semiconductor layer / an organic light emitting layer / an electron injecting electrode layer; (6) the form of the hole injection electrode layer / organic semiconductor layer / electron barrier layer / organic light emitting layer / electron injection electrode layer; (7) Forms of hole injecting electrode layer / organic semiconductor layer / organic light emitting layer / adhesion improving layer / electron injecting electrode layer; (8) Forms of hole injecting electrode layer / hole injecting layer / hole transporting layer / organic light emitting layer / electron injecting layer / electron injecting electrode layer; (9) Forms of hole injecting electrode layer / insulating layer / organic light emitting layer / insulating layer / electron injecting electrode layer; (10) Forms of hole injecting electrode layer / inorganic semiconductor layer / insulating layer / organic light emitting layer / insulating layer / electron injecting electrode layer; (11) Forms of hole injecting electrode layer / organic semiconductor layer / insulating layer / organic light emitting layer / insulating layer / electron injecting electrode layer; (12) Hole injection electrode layer / Insulation layer / Hole injection layer / Hole transport layer / Organic light emitting layer / Insulation layer / Electron injection electrode layer or (13) Hole injection electrode layer / Insulating layer / Hole injection layer / Hole transport layer / The light emitting layer may have a shape of an injection layer / electron injecting electrode layer, and in some cases, at least two light emitting layers may be disposed between the hole injecting electrode layer and the electron injecting electrode layer as an intermediate electrode layer or a charge generating layer (CGL) But the present invention is not limited thereto. In addition, an electrode layer such as an electron injection electrode layer that is present at the top of the structure of the organic layer may be omitted as necessary, and in this case, the encapsulation layer may serve as the electrode layer.

In this field, various materials for forming a hole or electron injection electrode layer and an organic layer such as a light emitting layer, an electron injection or transport layer, a hole injection or transport layer, and a forming method thereof are known. All of the same methods can be applied.

The organic electronic device includes an encapsulation layer protecting the device on top of the device. The encapsulation layer may be electrically connected to the device. In the present specification, that the encapsulation layer is electrically connected to the device may mean that the encapsulation layer is formed to allow a current to flow through the encapsulation layer and the first electrode layer. In order to electrically connect the encapsulation layer and the device, the encapsulation layer may be formed in contact with the device, but the structure of the encapsulation layer is not limited thereto as long as it is formed to enable electrical connection.

The encapsulation layer may cover the entire surface of the device. Thus, for example, the encapsulation layer may be in contact with both the top and side surfaces of the device. Such a structure enables more suitable protection of the device, and can efficiently secure electrical connection between the encapsulation layer and the device. In addition, through the above structure, it is also possible to obtain an additional advantage of effectively dissipating heat from the device to the outside.

The encapsulation layer can, for example, have an electrical conductivity of about 5 mS / m to 100 mS / m at 25 ° C. Another lower limit of the electrical conductivity may be, for example, about 10 mS / m, about 20 mS / m, about 30 mS / m, about 40 mS / m, or about 50 mS / m, and other upper limits may be, for example, For example, it may be about 90 mS / m, about 80 mS / m or about 70 mS / m. Encapsulation layer electrically connected to the device within such a range of electrical conductivity may properly perform the desired function. Can be. However, it is an example of the range of the electrical conductivity, which may be changed in consideration of the strength of the applied power or the structure of the device.

The encapsulation layer may also have a thermal conductivity of, for example, about 1 W / mK to 500 W / mK at 25 ° C. Another lower limit of the thermal conductivity may be, for example, about 10 W / mK, about 50 W / mK, about 100 W / mK, about 150 W / mK, and another upper limit may be, for example, about 450 W / mK. , About 400 W / mK, about 350 W / mK, about 300 W / mK, or about 250 W / mK. By controlling the thermal conductivity of the encapsulation layer as described above, the encapsulation layer protecting the element can effectively release heat generated from the element during the driving of the element to the outside, thereby providing a more reliable organic electronic device. .

The encapsulation layer may be formed of any material as long as it can be electrically connected to the device by having the above electrical conductivity, for example. For example, the encapsulation layer may include a conductive film layer or a metal layer, or may include a laminate structure of both. In the case of including a laminated structure, a conductive film layer may be disposed on the device side, and a metal layer may be disposed outside thereof.

As the conductive film layer included in the encapsulation layer, a material having suitable moisture barrier properties may be used. For example, the conductive film layer may have a water transmittance of about 10 ⁻⁸ g / m ² · day to 10 g / m ² · day. The moisture permeability of the conductive film layer in the above range can provide a device having more durability and reliability. The lower limit of the moisture permeability of the conductive film layer may be, for example, about 10 ⁻⁶ g / m ² · day, and the other upper limit may be, for example, 10 ⁻¹ g / m ² · day, 10 ⁻² g / It may be about m ² · day or 10 ⁻⁵ g / m ² · day, but is not particularly limited as long as it is within a range where suitable durability and reliability can be secured.

Conductive film layers can be formed using a variety of materials as long as they exhibit suitable electrical conductivity and, if necessary, exhibit moisture permeability in this category. For example, the conductive film layer may be a resin layer comprising a suitable conductive filler and / or a moisture barrier filler. As a suitable material capable of forming the conductive film layer, for example, carbon materials such as carbon black, fullerene (C60), carbon nanotubes or graphene, or particles of conductive metals such as gold or silver may be exemplified. have. The conductive film layer includes the above materials, and may include other materials as necessary. For example, the conductive film layer may be formed by depositing the above-mentioned material on the front surface of the device, or by applying a material including a material different from the above-mentioned material, for example, a binder, to the front surface of the device.

When the conductive film layer is formed, the thickness thereof is not particularly limited as long as an appropriate electrical connection and / or protective effect is secured. For example, the thickness of the conductive film layer may be about 5 μm to 50 μm. Another lower limit of the thickness of the conductive film layer may be, for example, about 10 μm, 15 μm, or 20 μm, and another upper limit may be, for example, about 45 μm, 40 μm, 35 μm, 30 μm, 25 μm or 20 μm or so.

The metal layer included in the encapsulation layer may include, for example, stainless steel, silver, copper, aluminum, and / or nickel alloy as a metal having excellent electrical conductivity. Such a metal layer may be formed by, for example, vapor deposition or by laminating a thin metal film. Such a metal layer may have a thickness of, for example, about 0.1 mm to 3 mm. The other lower limit of the thickness of the metal layer may be about 0.3 mm or 0.5 mm, and the other upper limit may be, for example, about 2.5 mm, 2.0 mm, 1.5 mm or 1 mm, but is not limited thereto.

The encapsulation layer may be composed of the conductive film layer and / or the metal layer, and if necessary, may be formed of another material in addition to the material, or may further include the other material.

The organic electronic device may further include a second electrode layer between the encapsulation layer and the device. If necessary, the device may be configured by electrically connecting the encapsulation layer directly on the organic layer without the second electrode layer, but the second electrode layer may be formed to effectively drive the device at a relatively low voltage. The second electrode layer may be electrically connected to both the organic layer and the encapsulation layer.

The second electrode layer may be formed in consideration of the action of the first electrode layer through the material and the method used for forming the first electrode layer described above.

3 is a diagram illustrating the exemplary organic electronic device, in which a first electrode layer (not shown) and an organic layer 20 are sequentially formed on a base layer 10, and a second electrode layer 30 is formed on the substrate layer 10. The formed device is protected by an encapsulation layer including a conductive film layer 41 and a metal layer 42.

For example, as shown in FIG. 3, the second electrode layer may have the same projected area as the organic layer. As used herein, the term "projection area" refers to the area of the projection of the object to be recognized when the organic electronic device is observed from the top or bottom of the device surface in the normal direction, for example, the area of the organic layer or the electrode layer. . Therefore, for example, the surface area of the organic layer or the electrode layer is formed in an uneven shape, and thus the actual surface area is large when one of the layers is larger than the other layer. Both are interpreted as having the same projected area if they are identical. In addition, it means the same substantially same as mentioned above, and also includes the case where there exists a some difference of area by a manufacturing error. As will be described later, according to the structure of the organic electronic device, even when the second electrode layer is formed, the electrode layer does not need to be exposed to the outside of the encapsulation layer as in the conventional structure, for example, the same mask in the process of forming the device Through the deposition process using the organic layer and the second electrode layer can be formed sequentially. Therefore, the second electrode layer and the organic layer having the same area may mean, for example, that the organic layer and the second electrode layer are formed using the same mask.

For example, as shown in FIG. 3, the device including the first electrode layer and the organic layer, or the device including the first electrode layer, the organic layer and the second electrode layer may have both a front surface, ie, an upper surface and a side surface thereof, by the encapsulation layer. It may be covered. In this structure, an external power source may be connected to the encapsulation layer and the first electrode layer. In addition, when the second electrode layer is present in the structure, the second electrode layer may not be connected to an external power source. This structure is a characteristic structure that is distinguished from the past, through which it is possible to provide a device having a superior durability and reliability, the manufacturing process of such a device can be greatly simplified as compared to the past.

The organic electronic device may further include an optical functional layer, such as a light scattering layer, between the base layer and the first electrode layer. 4 and 5 illustrate only a part of the organic electronic device including the above-mentioned structure, and an example in which the optical functional layer 103 and the first electrode layer 102 are sequentially formed on the base layer 101. Representative structure. In the above, the optical functional layer may have a smaller projected area than the base layer, and the first electrode layer may have a larger projected area than the optical functional layer. The optical functional layer may exist in various forms as long as the projection area is smaller than that of the base layer and the projection area is smaller than that of the first electrode layer. For example, the optical functional layer 103 is formed only at a portion except the edge of the base layer 101 as shown in FIG. 3, or the optical functional layer 103 partially remains at the edge of the base layer 101 as shown in FIG. 5. You may.

6 is a diagram illustrating an example of observing the structure of FIG. 4 from above. As shown in FIG. 6, the area A of the first electrode layer, that is, the projected area A of the first electrode layer, which is recognized when viewed from the top, is wider than the projected area B of the optical functional layer underneath. The ratio A / B of the projection area A of the first electrode layer and the projection area B of the optical functional layer may be, for example, 1.04 or more, 1.06 or more, 1.08 or more, 1.1 or more, or 1.15 or more. If the projected area of the optical functional layer is smaller than the projected area of the first electrode layer, the upper limit of the ratio A / B of the projected area is particularly limited because it is possible to implement a structure in which the optical functional layer is not exposed to the outside. It doesn't work. The upper limit of the ratio (A / B) may be, for example, about 2.0, about 1.5, about 1.4, about 1.3, or about 1.25, In the substrate, the first electrode layer may be formed on an upper portion of the base layer on which the optical functional layer is not formed. The first electrode layer may be formed in contact with the base layer, or may be formed to include additional elements between the base layer and the base layer such as an intermediate layer to be described later. By such a structure, it is possible to implement a structure in which the optical functional layer is not exposed to the outside when the organic electronic device is implemented.

For example, as shown in FIG. 6, the first electrode layer may be formed up to an area including a region deviating from all peripheral portions of the optical functional layer when viewed from the top. In this case, for example, when there are a plurality of optical functional layers on the base layer as shown in FIG. 5, at least one optical functional layer among the optical functional layers, for example, at least an optical functional layer on which an organic layer is to be formed. The first electrode layer can be formed up to an area including an area beyond all periphery. For example, in the structure of FIG. 5, if the organic layer is formed on the upper surface of the optical functional layer existing on the right and left edges, the structure of FIG. 2 extends to the left and right sides, and the optical functionality present on the right and left edges. The structure can be modified such that the first electrode layer is formed up to an area beyond all the periphery of the layer. In the above structure, when the encapsulation layer is attached to the first electrode layer on which the optical functional layer is not formed, or the conductive material layer is formed as described below, the optical functional layer is not exposed to the outside. Can be formed.

In order to secure an appropriate resistance value, the thickness of the optical functional layer and the first electrode layer may be adjusted in the organic electronic device. In this case, the thickness of the first electrode layer may mean the thickness of the first electrode layer formed on the base layer on which the optical functional layer is not formed. By appropriately adjusting the thickness of the both, it is possible to secure a suitable resistance value of the first electrode layer. For example, the ratio (T1 / T2) of the thickness T1 of the optical functional layer and the thickness T2 of the first electrode layer formed on the base layer on which the optical functional layer is not formed is about three. To about 15, about 4 to about 12 or about 5 to about 10. The thickness of the optical functional layer and the first electrode layer may mean an average thickness of each.

In the case where the organic electronic device has the structure, that is, the transparent area of the optical functional layer is smaller than the transparent area of the first electrode layer, the first electrode layer directly present on the base layer, that is, the optical functional layer is not formed below. The non-first electrode layer may have a pencil hardness of at least 6H, at least 7H, or at least 8H. As described above, the device may be configured by attaching an encapsulation layer to a first electrode layer in which no optical functional layer is present, and the first electrode layer may also be connected to an external power source or the like together with the encapsulation layer. Since the first electrode layer may be continuously worn or exposed to pressure, high durability is required to implement a device having stable electrical connection. If the first electrode layer has a pencil hardness in the above range, it may be possible to implement a structure having excellent durability against continuous wear or exposure to pressure. In addition, the higher the pencil hardness, the higher the pencil hardness because it is possible to implement a structure that is excellent in the durability against continuous wear or pressure exposure is not limited. For example, the upper limit of the pencil hardness may be about 10H or 9H. The first electrode layer present on the optical functional layer and the first electrode layer present on the base layer may have different pencil hardnesses. For example, in the substrate, the first electrode layer on the substrate layer may have a pencil hardness in the above range, and the first electrode layer on the optical functional layer may have a pencil hardness of about 1H to 5H or about 1H to 4H. Pencil hardness is measured herein with a pencil load of 500 g and a pencil movement speed of 250 mm / min in accordance with ASTM D3363.

The substrate may further include, for example, a conductive material layer electrically connected to both the first functional layer on the optical functional layer and the first electrode layer on the substrate layer. FIG. 7 shows one exemplary substrate further comprising a conductive material, wherein the conductive material 501 is in physical contact with both the first electrode layer 1021 on the substrate layer and the first electrode layer 1022 on the optical functional layer. By way of example, it is shown that the case is electrically connected through. As used herein, the term electrical connection may mean any connection state in which current may flow between connected objects. When the conductive material is formed as described above, it is possible to solve the problem of increasing the resistance of the first electrode layer due to the step at the boundary between the first electrode layer on the base layer and the first electrode layer on the optical functional layer as described above. The thickness of the functional layer and the thickness control of the first electrode layer on the substrate layer may be freely realized, and the substrate may be freely implemented. In addition, the structure in which the optical functional layer is not exposed to the outside due to the presence of the conductive material may be more efficiently implemented. The kind of the conductive material is not particularly limited as long as it can be electrically connected to the first electrode layer. For example, a material used as an electrode material in various electronic products may be freely applied. For example, a metal electrode material such as silver (Ag), copper (Cu), nickel (Ni), or the like may be used as the conductive material.

The organic electronic device may further include, for example, an intermediate layer existing between the optical functional layer and the first electrode layer. For example, the intermediate layer may have a larger projected area than the optical functional layer, and may be formed on the top of the optical functional layer and on the base layer on which the optical functional layer is not formed. FIG. 8 is a diagram illustrating an exemplary substrate further including an intermediate layer 601 formed as described above. The intermediate layer may solve the problem of increasing the resistance of the first electrode layer by alleviating the step difference at the boundary between the first electrode layer on the optical functional layer and the first electrode layer on the base layer formed by the optical functional layer. In addition, when a barrier material, that is, a material having low transmittance of moisture or moisture, is used as the intermediate layer, a structure in which the optical functional layer is not exposed to the outside may be more efficiently implemented. For example, the intermediate layer may be a layer having an absolute value of a difference in refractive index from the first electrode layer of about 1 or less, 0.7 or less, 0.5 or less or 0.3 or less. When the refractive index is adjusted in this way, for example, light generated on the upper portion of the first electrode layer may be trapped at the interface between the first electrode layer and the intermediate layer, thereby preventing the light extraction efficiency from decreasing. The material forming the intermediate layer may be a material having a relation of the refractive index with the first electrode layer as described above and having a barrier property when necessary. Such materials are variously known, for example SiON and the like can be exemplified. The intermediate layer may be formed using a material as described above, for example, by deposition or wet coating. The thickness of the intermediate layer is not particularly limited and may be, for example, in the range of about 10 nm to 100 nm or about 20 nm to 80 nm. The thickness means an average thickness, and for example, the intermediate layer formed on the optical functional layer and the intermediate layer formed on the substrate layer may have different thicknesses.

In the organic electronic device, the kind of the optical functional layer positioned between the first electrode layer and the base layer is not particularly limited. As the optical functional layer, any kind of layer existing between the first electrode layer and the base layer and exhibiting at least one optical function, which can contribute to the improvement of the function of the device such as an organic electronic device, can be used. Typically, such an optical functional layer has a low durability against a material such as moisture or moisture penetrating from the outside, thereby providing a path for the moisture or moisture to penetrate into the device after the device is implemented, thereby improving the performance of the device. May adversely affect However, in the structure of the substrate, implementation of a structure in which the optical functional layer is not exposed to the outside when the device is implemented due to the projection area and the formation position of the optical functional layer or the first electrode layer, or the presence of a conductive material or an intermediate layer, etc. It is possible to implement a device having excellent durability.

One example of the optical functional layer may be a light scattering layer. In the present application, the term light scattering layer refers to, for example, scattering, refracting, or diffracting light incident to the layer so that light incident in the direction of the first electrode layer is disposed between any two layers of the base layer, the light scattering layer, and the first electrode layer. It can mean any kind of layer formed to eliminate or mitigate trapping at the interface. The light scattering layer is not particularly limited as long as the light scattering layer is implemented to exhibit the above functions.

For example, the light scattering layer can be a layer comprising a matrix material and scattering regions. 9 shows a form in which an exemplary light scattering layer comprising a scattering region 702 formed of scattering particles and a matrix material 701 is formed in the base layer 101. As used herein, the term "scattering region" refers to a region having a refractive index different from that of a surrounding material such as a matrix material or a flat layer described later, and having an appropriate size and capable of scattering, refracting, or diffracting incident light. Can mean. The scattering region may be, for example, a particle having the above refractive index and size, or may be an empty space. For example, scattering regions can be formed using particles that are different from the surrounding material and have a higher or lower refractive index than the surrounding material. The refractive index of the scattering particles may have a difference in refractive index between the surrounding material, for example, the matrix material and / or the flat layer, greater than 0.3 or greater than 0.3. For example, the scattering particles may have a refractive index of about 1.0 to 3.5 or about 1.0 to 3.0. The term "refractive index" is a refractive index measured with respect to light of about 550 nm wavelength. The refractive index of the scattering particles may be, for example, 1.0 to 1.6 or 1.0 to 1.3. In another example, the refractive index of the scattering particles may be about 2.0 to 3.5 or about 2.2 to 3.0. As the scattering particles, for example, particles having an average particle diameter of 50 nm or more, 100 nm or more, 500 nm or more or 1,000 nm or more can be exemplified. The average particle diameter of the scattering particles may be, for example, 10,000 nm or less. The scattering region may also be formed by a space filled with air as an empty space having such a size.

The scattering particles or regions may have a shape such as a spherical shape, an ellipsoid, a polyhedron, or an amorphous form, but the shape is not particularly limited. As the scattering particles, for example, organic materials such as polystyrene or derivatives thereof, acrylic resins or derivatives thereof, silicone resins or derivatives thereof, or novolak resins or derivatives thereof, or silica, alumina, titanium oxide or zirconium oxide Particles containing an inorganic material and the like can be exemplified. The scattering particles may be formed of only one of the above materials or two or more of the above materials. For example, hollow particles such as hollow silica or particles having a core / cell structure may be used as the scattering particles.

The light scattering layer may further include a matrix material that retains scattering regions, such as scattering particles. As the matrix material, for example, a material having a refractive index similar to that of another adjacent material such as a base material layer or a material having a higher refractive index may be formed. The matrix material is, for example, a polyimide, a cardo resin having a fluorene ring, a urethane, an epoxide, a polyester or an acrylate-based thermal or photocurable monomeric, oligomeric or polymeric organic A material, an inorganic material such as silicon oxide, silicon nitride, silicon oxynitride or polysiloxane, or an organic-inorganic composite material can be used.

The matrix material may comprise polysiloxane, polyamic acid or polyimide. The polysiloxane may be formed by, for example, polycondensing a condensable silane compound or a siloxane oligomer, and may form a matrix material based on a bond between silicon and oxygen (Si-O) through the above. It is also possible to control the condensation conditions and the like in the process of forming the matrix material so that the polysiloxane is based only on the siloxane bond (Si-O), or the condensed functional group such as an organic group such as an alkyl group or an alkoxy group remains.

As the polyamic acid or polyimide, for example, a polyamic acid or polyimide having a refractive index of about 1.5 or more, about 1.6 or more, about 1.65 or more, or about 1.7 or more can be used. Such high refractive polyamic acid or polyimide can be produced using, for example, a monomer into which a halogen atom, a sulfur atom or a phosphorus atom other than fluorine is introduced. For example, a polyamic acid capable of improving the dispersion stability of the particles may be used because there is a site capable of bonding with the particles such as a carboxyl group. As the polyamic acid, for example, a compound containing a repeating unit represented by the following formula (1) can be used.

[Formula 1]

In formula 1 n is a positive number.

The repeating unit may be optionally substituted by one or more substituents. Examples of the substituent include functional groups including a halogen atom other than fluorine, a halogen atom such as a phenyl group, a benzyl group, a naphthyl group or a thiophenyl group, a sulfur atom or a phosphorus atom.

The polyamic acid may be a homopolymer formed only from the repeating unit represented by the formula (1), or may be a block or a random copolymer including units other than the repeating unit represented by the formula (1). In the case of a copolymer, the kind and ratio of other repeating units can be appropriately selected within a range that does not impair the desired refractive index, heat resistance, and light transmittance, for example.

Specific examples of the repeating unit of the formula (1) include repeating units of the following formula (2).

(2)

N in the formula (2) is a positive number.

The polyamic acid may have a weight average molecular weight of about 10,000 to about 100,000 or about 10,000 to about 50,000, for example, in terms of standard polystyrene measured by GPC (Gel Permeation Chromatograph). The polyamic acid having the repeating unit represented by the formula (1) has a light transmittance of not less than 80%, not less than 85%, or not less than 90% in the visible light region and is excellent in heat resistance.

The light-scattering layer may be, for example, a layer having a concave-convex structure. 10 exemplarily illustrates a light scattering layer 801 having an uneven structure formed on the base layer 101. When the uneven structure of the light scattering layer is appropriately adjusted, incident light may be scattered. The light scattering layer having a concave-convex structure, for example, hardens the material or forms a light-scattering layer in contact with a mold capable of transferring the concave-convex structure of a desired shape in the process of curing the heat or photocurable material. After forming a layer of the material to be formed in advance, it can be produced by forming an uneven structure through an etching process or the like. Alternatively, it may be formed by blending particles having a suitable size and shape into the binder for forming the light scattering layer. In this case, the particles need not necessarily be particles having a scattering function, but particles having a scattering function may be used.

The light scattering layer may be, for example, a material coated by a wet coating method, a method of applying heat or irradiating light, or a method of curing the material by a sol-gel method, or a chemical vapor deposition (CVD) or PVD ( It may be formed through a deposition method such as a physical vapor deposition method or the like, or nanoimprinting or microembossing.

The light scattering layer may further comprise high refractive particles, if necessary. The term " high refractive index particles " may mean particles having a refractive index of 1.5 or more, 2.0 or more, 2.5 or more, 2.6 or more, or 2.7 or more, for example. The upper limit of the refractive index of the high refractive particles may be selected, for example, in a range capable of satisfying the refractive index of the desired light scattering layer. The high refractive particles may, for example, have a smaller average particle diameter than the scattering particles. The high refractive index particles may be, for example, from 1 nm to 100 nm, from 10 nm to 90 nm, from 10 nm to 80 nm, from 10 nm to 70 nm, from 10 nm to 60 nm, from 10 nm to 50 nm, Of the average particle diameter. As the high refractive particles, alumina, aluminosilicate, titanium oxide or zirconium oxide and the like can be exemplified. As the high refractive index particles, for example, rutile titanium oxide can be used as the particles having a refractive index of 2.5 or more. The rutile-type titanium oxide has a higher refractive index than other particles, and therefore, it is possible to adjust the refractive index to a desired value at a relatively small ratio.

An optical functional layer may be a layer including, for example, the light scattering layer and a flat layer formed on the light scattering layer. The flat layer may be formed with a projection area corresponding to the light scattering layer. In the present specification, the term "B having a projection area corresponding to A or B having the same projection area as A", unless otherwise specified, refers to the projection of A based on the area recognized when the substrate is observed from above. It means the case where the area and the projected area of B are substantially the same. Substantially the same also includes a case where the projected areas of the two regions are slightly different due to, for example, a process error. For example, the ratio AA / BA of the projection area AA of A and the projection area BA of B having the projection area corresponding to A is 0.5 to 1.5, 0.7 to 1.3, 0.85 to 1.15 or substantially 1 may also be included in the above case. The light scattering layer and the flat layer are present between the base layer and the first electrode layer when the flat layer is further present, the projected area of the first electrode layer is wider than the projected area of the light scattering layer and the flat layer, The first electrode layer may be formed on the surface of the base layer on which the light scattering layer and the flat layer are not formed. However, the flat layer is not essential and may not exist, for example, if the light scattering layer itself is formed flat.

For example, the flat layer may provide a surface on which the electrode may be formed on the light scattering layer, and may realize better light extraction efficiency through interaction with the light scattering layer. For example, the flat layer may have a refractive index equivalent to that of the adjacent first electrode layer. The refractive index of the flat layer may be, for example, 1.7 or more, 1.8 to 3.5, or 2.2 to 3.0. When the flat layer is formed on the light scattering layer of the above-mentioned concave-convex structure, the flat layer may be formed to have a refractive index different from that of the light scattering layer.

The flat layer can be formed, for example, by mixing the aforementioned high refractive particles with the matrix material. As the matrix material, for example, the matrix material described in the item of the light scattering layer can be used.

In another example, the flat layer may be formed using a material in which a compound such as alkoxide or acylate of a metal such as zirconium, titanium or cerium is combined with a binder having a polar group such as a carboxyl group or a hydroxy group. Compounds such as alkoxides or acylates may be condensed with the polar groups in the binder, and the high refractive index may be realized by including the metal in the binder. Examples of the alkoxide or acylate compound include titanium alkoxides such as tetra-n-butoxy titanium, tetraisopropoxy titanium, tetra-n-propoxy titanium or tetraethoxy titanium, titanium stearate and the like. Zirconium such as zirconium alkoxide, zirconium tributoxy stearate such as titanium acylate, titanium chelates, tetra-n-butoxy zirconium, tetra-n-propoxy zirconium, tetraisopropoxy zirconium or tetraethoxy zirconium Acylate, zirconium chelates, etc. can be illustrated. The flat layer may also be formed by a sol-gel coating method in which a metal alkoxide, such as titanium alkoxide or zirconium alkoxide, and a solvent such as alcohol or water are prepared to prepare a coating liquid, and after the coating is applied, the coating solution is baked at an appropriate temperature.

The thickness of the optical function as described above is not particularly limited, but may be, for example, formed to have a thickness of about 500 nm to 1.000 nm, about 500 nm to 900 nm, or about 500 nm to 800 nm.

The present application also relates to a method for manufacturing an organic electronic device. An exemplary organic electronic device is formed on a substrate layer, and forms an encapsulation layer that protects devices including a first electrode layer and an organic layer sequentially stacked from the substrate layer side such that the encapsulation layer can be electrically connected to the device. It may include. The manufacturing method may be, for example, a method of manufacturing the organic electronic device described above, and thus, the above-described matters may be equally applied with respect to the base layer, the first electrode layer, and the material of the organic layer.

In the above manner, the first electrode layer and the organic layer may be formed by applying a generally known manner, and the manner is not particularly limited.

If necessary, after forming the first electrode layer, an insulating layer may be formed in a required region among other regions except for a region in which the organic layer is to be formed. For example, after forming the first electrode layer on the substrate layer by sputtering or vapor deposition, an insulating material such as photosensitive polyimide is formed on the first electrode layer, and an insulating material of a required portion is selectively selected by the photolithography or the like. It can be removed to form an insulating layer.

The base layer on which the first electrode layer is formed may be applied to a process of forming an organic layer in conventional equipment such as, for example, vacuum deposition equipment. For example, the organic layer may be formed in a region where the insulating layer is not formed in the first electrode layer by a shadowing method using a mask.

In the manufacturing method, the above-described forming process of the second electrode layer may be performed if necessary. As mentioned above, since the second electrode layer does not need to be exposed to the outside of the encapsulation layer in order to connect with an external power source, the second electrode layer may be formed to have the same or corresponding projection area as the organic layer.

Therefore, when the second electrode layer is formed next to the organic layer, each of the above layers may be formed using the same mask. As such, the process of using the same mask to form the organic layer and the formation of the second electrode layer may be more effective in the application of in-line deposition equipment. In-line deposition equipment is a method in which deposition is performed while the substrate layer and the mask are initially bonded to each other, and according to the conventional structure, the mask must be replaced to form a second electrode layer after deposition of the organic layer in the process of the process. However, although the operation of the organic electronic device is required, the second electrode layer may be directly formed using the same mask without the replacement operation.

The process of forming the organic layer or the second electrode layer and forming the encapsulation layer may be performed. The encapsulation layer can be formed using the materials and methods as described above. In addition, the encapsulation layer may be formed to contact both the upper surface and the side surface of the device as described above.

If necessary, forming the above-described optical functional layer between the substrate layer and the first electrode layer may be further performed. As described above, in order to have a different projected area from the first electrode layer, an optical functional layer is formed on the base layer, and the optically functional layer is processed to have a smaller transparent area than the base layer, and then the processed base layer The first electrode layer may be formed to cover all of the optical functional layers. The processing of the optical functional layer in the above can be performed, for example, by removing at least a part of the optical functional layer formed on the base layer. The optical functional layer can be patterned, for example, through the above processing.

For example, as shown in FIG. 14, a part of the optical functional layer 103 formed after the optical functional layer 103 is formed on the entire surface of the base layer 101 may be removed. The method of forming an optical functional layer on a base material layer is not specifically limited, What is necessary is just to apply a conventional method according to the aspect of an optical functional layer. For example, the optical functional layer may be formed by the above-described coating method, a deposition method such as CVD (Chemical Vapor Deposition) or PVD (Physical Vapor Deposition), or a nanoimprinting or microembossing method.

The method of removing a part of the optical functional layer formed on the base layer is not particularly limited, and an appropriate method may be applied in consideration of the type of the optical functional layer.

For example, the layer can be removed by applying wet or dry etching to treat the optical functional layer with an etchant that can dissolve the optical functional layer or the like.

In another example, the optical functional layer may be removed through laser processing. For example, after forming an optical functional layer on a base material layer, it can irradiate and remove a laser. For example, the laser may be irradiated from the side on which the optical functional layer is formed, or irradiated from the base layer side when the base layer is translucent. As the laser, any kind can be used as long as it can exhibit an appropriate output to remove the optical functional layer. Laser, for example, a fiber laser diode (fiber diode laser), ruby _{^{(Cr 3 +: Al 2 O}} 3), YAG (Nd 3 +: Y 3 Al 5 O 12), phosphate glass (phosphate glass), Silicate glass (silicate glass) or YLF (Nd ^{3 +} : LiYF ₄ ) and the like can be used. Such lasers can be irradiated, for example, in the form of spot lasers or line beam lasers. Irradiation conditions of the laser are not particularly limited as long as they are adjusted to allow proper processing. For example, a laser of a wavelength belonging to an ultraviolet (UV) to infrared (IR) region may be irradiated with an output of about 1 W to about 10 W, but is not limited thereto.

The optically functional layer may also be removed by a water jet method. The waterjet method is a method of removing water by spraying water at a predetermined pressure. For example, the optically functional layer may be removed by spraying water at a pressure of about 500 atmospheres to 2000 atmospheres or about 800 atmospheres to 1300 atmospheres. The pressure water sprayed for efficient removal may further comprise an abrasive. As the abrasive, an appropriate material may be used in an appropriate ratio among known materials in consideration of the object to be removed.

In the case of applying the waterjet method, the spray radius or the speed is not particularly limited, and may be selected in consideration of a part or a pattern to be removed. For example, the spray width may be adjusted to be about 1 mm to about 10 mm or about 2 mm to about 5 mm in the waterjet process. This allows precise removal of the optical functional layer. In addition, the speed of etching through the waterjet may be, for example, about 300 mm / min to about 2000 mm / min or about 500 mm / min to about 1200 mm / min, thereby ensuring an effective process efficiency, It can be removed.

Alternatively, a part of the optical functional layer may be removed by photolithography, or an optical functional layer having a smaller projected area than the base layer may be formed by using off-set printing or other pattern printing. May be considered.

The processing form of the optical functional layer is not particularly limited and may be changed according to the purpose. For example, the processing corresponds to the light emitting area of the light emitting layer in which the position of the optical functional layer whose projection area is smaller than that of the base layer will be subsequently formed, and the projected area corresponds to the light emitting layer or the light emitting area formed by the light emitting layer, Or greater than that. In addition, the optical functional layer can be processed in various patterns if necessary. In addition, the optically functional layer or the laminated structure of the optically functional layer and the flattened layer present in the region where the adhesive is applied or the region corresponding to the terminal region of the device may be removed for bonding to the encapsulation structure.

After the optical functional layer is removed in the above manner, the organic electronic device can be manufactured by forming the encapsulation layer through the process of forming the first electrode layer, the organic layer, and, if necessary, the second electrode layer.

The present application also relates to the use of the above-described organic electronic devices, for example, organic light emitting devices. The organic light emitting device may be a backlight of a liquid crystal display (LCD), an illumination device, a light source such as various sensors, a printer, a copying machine, a vehicle instrument light source, a traffic light, a display, A light source, a display, a decoration, or various lights. In one example, the present application relates to a lighting device comprising the organic light-emitting device. In the case where the organic light emitting device is applied to the illumination device or other use, the other components constituting the device or the like and the constitution method of the device are not particularly limited. As long as the organic light emitting device is used, Any of the materials or methods may be employed.

The present application provides an organic electronic device having a structure in which an encapsulation layer protecting an element is electrically connected to an element. The encapsulation layer may be connected to an external power source and, when necessary, exhibits proper thermal conductivity to effectively release heat generated from the device to the outside. Such an organic electronic device may have excellent reliability compared to the past, and may also be manufactured by a simple process.

1 and 2 show exemplary structures of conventional organic electronic devices.
3 shows an exemplary organic electronic device of the present application.
4-8 illustrate some portions of exemplary organic electronic devices.
8 and 10 are views showing examples of the optical functional layer.

Hereinafter, the organic electronic device and the like will be described in detail with reference to Examples and Comparative Examples, but the scope of the organic electronic device and the like is not limited to the following examples.

Example  One

An organic light emitting device having a structure as shown in FIG. 3 was formed in the following manner. First, a hole injection electrode layer including ITO (Indium Tin Oxide) was formed on a glass substrate as a substrate layer by a known sputtering method. Subsequently, after spin-coating a photosensitive polyimide insulating material on the entire surface of the electrode layer, the insulating material was removed to form a rectangular region having a length of 50 mm and a length of 50 mm by a photolithography method. Thereafter, after introducing the glass substrate into the inline vacuum deposition equipment, the organic layer and the second electrode layer were sequentially formed in the region where the insulating material was removed. In the above, the organic layer and the second electrode layer were formed by a shadowing method using the same mask. As a result of forming the organic layer and the second electrode layer as a result of using the same mask, the process time was reduced by 1/2 or more compared with the case of forming the organic layer and the second electrode layer in Comparative Examples 1 and 2. The organic layer was formed in a two stack white light emitting structure including a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer using a known material, and the second electrode layer was formed by depositing aluminum. Thereafter, a carbon black filler was deposited to a thickness of about 20 μm so as to cover both the top and side surfaces of the second electrode layer and the organic layer to form a conductive film layer (moisture transmittance: about 10 ⁻² g / m ² · day ). Subsequently, an aluminum foil having a thickness of about 2 mm was formed on the conductive film layer as shown in FIG. 3 to manufacture an organic electronic device. In the formed device, the first electrode layer (ITO electrode layer) and the aluminum foil of the encapsulation layer were connected to an external power source, and the second electrode layer was not connected to the external power source.

Example  2

An organic electronic device was manufactured in the same manner as in Example 1, except that the thickness of the conductive film layer was adjusted to about 25 μm and the thickness of the aluminum foil was changed to about 1.5 mm.

Example  3

An organic electronic device was manufactured in the same manner as in Example 1, except that the thickness of the conductive film layer was adjusted to about 20 μm and the thickness of the aluminum foil was changed to about 2.5 mm.

Comparative Example  One

The same 1st electrode layer (ITO electrode layer) and organic layer as Example 1 were formed on the glass substrate by the normal method. Thereafter, aluminum was deposited by using a mask separate from that used in forming the organic layer to form a second electrode layer. Subsequently, a water barrier film (water transmittance: about 10 ⁻² g / m ² · day, thickness: about 20 μm) including clay is formed on the entire surface of the second electrode layer, and about 0.8 mm is formed on the moisture barrier film. An organic electronic device was formed by covering a soda-lime glass having a thickness of and sealing the side surface of the device with an epoxy resin. In the device, the second electrode layer was exposed to the outside of the encapsulation layer so that the external power source could be connected, and the first electrode layer and the second electrode layer were connected to the external power source.

Comparative Example  2.

An organic electronic device was manufactured in the same manner as in Comparative Example 1, except that the thickness of the moisture barrier film was changed to about 100 μm, and a glass substrate (soda-lime glass) was not formed.

Test Example  1. Evaluation of Reliability

The reliability was evaluated while driving the organic electronic devices manufactured in Examples and Comparative Examples. Specifically, both the examples and the comparative examples were set such that the length of the bezel (the area between the outermost part of the encapsulation layer and the light emitting area) was 7 mm, and the apparatus was a constant temperature and humidity chamber having a temperature of 85 ° C. and a relative humidity of 85%. The reliability was evaluated while driving in the interior. Reliability was evaluated by the time (reliability time) taken until the contraction of the light emitting region was observed in the process of observing the light emitting region of the device under a microscope.

The measurement results as described above are shown in Table 1 below.

Example 1 Example 2 Example 3 Comparative Example 1 Comparative Example 2 Confidence time 255 timeout More than 250 hours 265 timeout 160 hours 60 hours

It can be seen from Table 1 that the device of the embodiment has a reliability time of at least 250 hours, which ensures superior reliability compared to Comparative Examples 1 and 2.

Test Example  2. Thermal stability  evaluation

The thermal stability was evaluated by driving the organic electronic devices prepared in Examples and Comparative Examples at room temperature (25 ° C.) for about 1 hour and then measuring the surface temperature of the device using an IR camera. Evaluation of thermal stability was performed while changing the current density applied to the device, the results are shown in Table 2 below.

Current density Example 1 Example 2 Example 3 Comparative Example 1 Comparative Example 2 5mA / cm ² 35 ℃ 34 ℃ 35 ℃ 37 ℃ 37 ℃ 10 mA / cm ² 38 ℃ 37 ℃ 39 ℃ 47 C 47 C 12.5mA / cm ² 40 ℃ 40 ℃ 42 ° C 50 ℃ 51 ℃ 15 mA / cm ² 44 ° C 42 ° C 45 ° C 53 ℃ 54 ℃ 17.5mA / cm ² 48 ° C 46 ° C 49 ℃ failed failed

In Table 2, it can be seen that the heat generated in the driving process is effectively released to the device of the embodiment, and in the case of Comparative Examples 1 and 2, the device is operated after 1 hour when driven at a current density of about 17.5 mA / cm ² . The drive of was not performed normally.

1, 10, 101: base material layer
3, 30, 102, 1021, 1022: electrode layer
103: optical functional layer
X: boundary region between the optical functional interlayer electrode layer and the base layer electrode layer
W: sidewall of the optical functional layer
A: projected area of the electrode layer
B: Projection Area of the Optical Functional Layer
501: conductive material
601: middle layer
701: matrix material
702: scattering region
801: light scattering layer
2, 20, 901: organic layer
4: Spacer
5: glass cap
6: encapsulation layer
41: conductive film layer
42: metal layer

Claims (20)

A base layer; An element including a first electrode layer and an organic layer formed on the substrate layer and sequentially stacked from the substrate layer side; And an encapsulation layer electrically connected to the device. The organic electronic device of claim 1, wherein the organic layer comprises a light emitting layer. The organic electronic device of claim 1, wherein the encapsulation layer is in contact with a top surface and a side surface of the device. The organic electronic device of claim 1, wherein the encapsulation layer has a thermal conductivity of 1 W / mK to 500 W / mK at 25 ° C. The organic electronic device of claim 1, wherein the encapsulation layer has an electrical conductivity of 5 mS / m to 100 mS / m at 25 ° C. The organic electronic device of claim 1, wherein the encapsulation layer comprises at least one selected from a conductive film layer and a metal layer. The organic electronic device of claim 1, wherein the encapsulation layer comprises a conductive film layer and a metal layer. The organic electronic device of claim 6, wherein the conductive film layer comprises a carbon material or conductive metal particles. The organic electronic device of claim 6, wherein the conductive film layer has a thickness of 5 μm to 50 μm. The organic electronic device of claim 6 or 7, wherein the conductive film layer has a water transmittance of 10 ⁻⁸ g / m ² · day to 10 g / m ² · day. 8. An organic electronic device according to claim 6 or 7, wherein the metal layer comprises at least one selected from the group consisting of stainless steel, aluminum, silver, copper and nickel alloys. 8. The organic electronic device of claim 6 or 7, wherein the metal layer has a thickness of 0.1 mm to 3 mm. The organic electronic device of claim 1, further comprising a second electrode layer electrically connected to the organic layer and the encapsulation layer between the encapsulation layer and the device. The organic electronic device of claim 13, wherein the second electrode layer has a projection area corresponding to the organic layer. The organic electronic device of claim 1, wherein the first electrode layer and the encapsulation layer are connected to an external power source. And an encapsulation layer formed on the substrate layer and protecting the devices including the first electrode layer and the organic layer sequentially stacked from the substrate layer side such that the encapsulation layer can be electrically connected to the devices. Method of preparation. The method of claim 16, further comprising forming a second electrode layer electrically connected to the encapsulation layer and the device between the encapsulation layer and the device. 18. The method of claim 17, wherein the second electrode layer is formed to have the same projected area as the device. 18. The method of claim 17, wherein the second electrode layer and the device are formed by a deposition method using one mask. An illumination comprising the organic electronic device of claim 1.

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