KR20130128810A - The electro-static chuck that can reduce a arcing - Google Patents

The electro-static chuck that can reduce a arcing Download PDF

Info

Publication number
KR20130128810A
KR20130128810A KR1020120052839A KR20120052839A KR20130128810A KR 20130128810 A KR20130128810 A KR 20130128810A KR 1020120052839 A KR1020120052839 A KR 1020120052839A KR 20120052839 A KR20120052839 A KR 20120052839A KR 20130128810 A KR20130128810 A KR 20130128810A
Authority
KR
South Korea
Prior art keywords
coating layer
forming
aluminum base
ceramic
electrostatic chuck
Prior art date
Application number
KR1020120052839A
Other languages
Korean (ko)
Inventor
장동수
Original Assignee
장동수
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 장동수 filed Critical 장동수
Priority to KR1020120052839A priority Critical patent/KR20130128810A/en
Publication of KR20130128810A publication Critical patent/KR20130128810A/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect

Abstract

The present invention relates to a method for manufacturing electrostatic chucks with improved arcking phenomenon, wherein the ceramic-coated electrostatic chucks are developed to reduce service life due to arcking phenomenon caused in a ceramic coating layer by the porosity of the coating layer. The method for manufacturing the electrostatic chucks with improved arcking phenomenon comprises steps of: preparing an aluminum base as the base of the electrostatic chucks; forming a plasma sealed coating layer on which Si3N4 is coated by a sputtering device for forming a thin film by evaporating the top of the aluminum base in a high vacuum state; forming a ceramic coating layer by coating Y2O3 or Al2O3 on the top of the plasma sealed coating layer; and flattening and embossing the top of the aluminum base after forming the ceramic coating layer. [Reference numerals] (AA) Prepare an aluminum base;(BB) Coat Si3N4 on the upper part of the aluminum base using a sputtering device;(CC) Coat Y203 or AI203 on the upper part of the SiN4 coating layer;(DD) Flatten and embossing the top of the base after the coating process

Description

아킹 현상을 개선한 정전척 제조방법{The electro-static chuck that can reduce a arcing}The electro-static chuck that can reduce a arcing

본 발명은 아킹 현상을 개선한 정전척 제조방법에 관한 것으로서, 좀더 상세하게 설명하면 세라믹 용사코팅타입으로 제조된 정전척은 코팅층의 기공률에 의하여 세라막 코팅층에 아킹 현상이 발생하여 그 수명을 저해하고 있는 문제점을 해결하기 위하여 개발된 아킹 현상을 개선한 정전척 제조방법에 관한 것이다.
The present invention relates to a method for manufacturing an electrostatic chuck which improves the arcing phenomenon, in more detail, the electrostatic chuck manufactured by the ceramic thermal spray coating type has an arcing phenomenon in the ceramic coating layer due to the porosity of the coating layer to inhibit its life. The present invention relates to an electrostatic chuck manufacturing method that improves the arcing phenomenon developed to solve the problem.

일반적으로 반도체 제조공정은 포토 공정 및 웨트(Wet) 공정을 제외하면 오염문제, 플라즈마 이그니션(Plasma ignition), 열분해 공정 등의 재현성을 위해 진공 프로세스를 사용하고 있으며, 웨이퍼의 대구경화가 진행됨에 따라 웨이퍼 반송 시스템의 정밀도 향상뿐만 아니라 프로세스 챔버에서의 웨이퍼의 정확하고 재현성 있는 정렬이 무엇보다 중요하게 인식되고 있다.In general, except for photo process and wet process, semiconductor manufacturing process uses vacuum process for reproducibility such as contamination problem, plasma ignition, pyrolysis process, etc. In addition to improving the accuracy of the transfer system, accurate and reproducible alignment of wafers in the process chamber is of paramount importance.

이러한 반도체 제조 장치 중 웨이퍼의 정밀한 위치 고정을 위하여 정전척(Electrostatic chuck)을 사용하는 경우가 증가하고 있으며 이는 기존에 진공 흡착하거나 또는 클램프를 이용하여 이송하는 방법은 웨이퍼에 물리적인 힘을 가하게 되어 손상되거나 이물질에 의하여 오염되는 것을 방지하기 위하여 정전기력을 이용하도록 한 것이다.In the semiconductor manufacturing apparatus, an electrostatic chuck is increasingly used to precisely fix a wafer, which is a method of conventional vacuum suction or clamp transfer, which causes physical damage to the wafer. It is to use the electrostatic force to prevent contamination by the foreign matter or foreign matter.

이러한 정전척은 세라믹 용사코팅 타입과 세라믹 내부에 전극을 삽입하여 소결한 세라믹 플레이트 타입이 주류를 이루고 있다.The electrostatic chuck is mainly composed of a ceramic thermal spray coating type and a ceramic plate type sintered by inserting electrodes in the ceramic.

이중 세라믹 용사코팅 타입의 정전척은 알루미늄의 베이스에 Y2O3 또는 Al2 O3를 코팅하여 이루어진다.Double ceramic spray coating type electrostatic chuck is made by coating Y2O3 or Al2O3 on the base of aluminum.

도 5는 종래 아킹에 의하여 손상된 정전척을 나타낸 단면도로서, 알루미늄 베이스(11)의 상부에 형성되는 세라믹 코팅층(12)을 용사의 방법에 의하여 코팅할 경우 어느 정도 기공율(1.5~3%)이 존재하게 되며 이러한 기공을 통하여 플라즈마상의 전하들이 알루미늄 베이스(11)나 전극층에 침투하여 세라믹 코팅층(12)에 아킹(Acring)을 일으키게 되며 이는 세라믹 코팅층(12)에 손상(;손상부(2))을 가져오게 되어 평탄도가 떨어지거나 가스홀이 막히는 경우가 발생하는 것이다.5 is a cross-sectional view showing the electrostatic chuck damaged by the conventional arcing, the porosity (1.5 ~ 3%) is present to some extent when coating the ceramic coating layer 12 formed on the aluminum base 11 by the spraying method Through these pores, charges in the plasma penetrate into the aluminum base 11 or the electrode layer to cause arcing on the ceramic coating layer 12, which damages the ceramic coating layer 12 (; damage 2). It may bring about flatness or blockage of gas hole.

따라서 정전척(1)의 내구성 즉 수명이 짧아지는 원인이 되고 문제가 발생된 정전척(1)의 경우 세라믹 코팅층(12)을 전부 제거한 후 다시 세라믹 용사 코팅과 코팅된 표면의 평탄도 작업 및 엠보싱 작업을 시행하여 보수하고 있는 상황이다.
Therefore, in the case of the electrostatic chuck 1 which causes the durability, that is, the life of the electrostatic chuck 1 and shortens the problem, the ceramic coating layer 12 is completely removed, and then the ceramic spray coating and the flatness of the coated surface are again worked and embossed. The work is being carried out and repaired.

(특허 문헌 1) 대한민국특허등록 제10-0982649-0000호 (2010년09월10일)(Patent Document 1) Korean Patent Registration No. 10-0982649-0000 (September 10, 2010) (특허 문헌 2) 대한민국특허등록 제10-0427459-0000호 (2004년04월06일)(Patent Document 2) Korean Patent Registration No. 10-0427459-0000 (April 06, 2004) (특허 문헌 3) 대한민국특허등록 제10-0546808-0000호 (2006년01월19일)(Patent Document 3) Korean Patent Registration No. 10-0546808-0000 (January 19, 2006) (특허 문헌 4) 대한민국특허등록 제10-0899292-0000호 (2009년05월19일)(Patent Document 4) Korean Patent Registration No. 10-0899292-0000 (May 19, 2009)

본 발명은 상기와 같은 문제점을 해결하기 위하여 개발된 것으로서, 그 목적은 반도체 생산공정에 사용되는 정전척의 세라믹 코팅층이 쉽게 손상되는 것을 방지할 수 있는 아킹 현상을 개선한 정전척 제조방법을 개발하는 것에 있다.
The present invention was developed to solve the above problems, the object of which is to develop an electrostatic chuck manufacturing method that improves the arcing phenomenon that can be easily prevented from damaging the ceramic coating layer of the electrostatic chuck used in the semiconductor production process have.

상기와 같은 목적을 달성하기 위하여 본 발명은 정전척의 기초가 되는 알루미늄 베이스를 준비하는 단계와;In order to achieve the above object, the present invention comprises the steps of preparing an aluminum base as the basis of the electrostatic chuck;

상기 알루미늄 베이스의 상면에 고진공 상태에서 증발시켜 박막을 형성시키는 스퍼터링 장비를 이용하여 Si3N4를 코팅한 플라즈마 실링 코팅층을 형성하는 단계와;Forming a plasma sealing coating layer coated with Si 3 N 4 on a top surface of the aluminum base by using a sputtering apparatus for evaporating under high vacuum to form a thin film;

상기 플라즈마 실링 코팅층의 위로 Y2O3 또는 Al2O3를 코팅하여 세라믹 코팅층을 형성하는 단계와;Coating a Y2O3 or Al2O3 over the plasma sealing coating layer to form a ceramic coating layer;

상기 세라믹 코팅층을 형성한 후 상면의 평탄도 작업과 엠보싱을 형성하는 단계의 일련의 단계를 포함하여 이루어짐을 특징으로 한다.
After forming the ceramic coating layer is characterized in that it comprises a series of steps of the step of forming a flatness operation and embossing of the upper surface.

상술한 바와 같이 본 발명은 기공률이 존재하지 않는 스퍼터링의 기법으로 플라즈마 실링 코팅층을 형성하여 절연하고 그 위로 세라믹 코팅층을 이차로 형성하여 아킹의 현상을 줄이도록 하여 세라믹 코팅층의 손상에 의하여 수명이 저하되는 문제점을 해결하는 효과가 있다.
As described above, in the present invention, the plasma sealing coating layer is formed and insulated by a method of sputtering without porosity, and the ceramic coating layer is formed on the secondary to reduce the phenomenon of arcing, thereby reducing the lifespan due to damage of the ceramic coating layer. It has the effect of solving the problem.

도 1은 본 발명의 일 실시 예에 따른 사시도
도 2는 본 발명의 일 실시 예에 따른 단면도
도 3은 본 발명의 일 실시 예에 따른 제조과정을 나타낸 개념도
도 4는 본 발명의 일 실시 예에 따른 블록도
도 5는 종래 아킹에 의하여 손상된 정전척을 나타낸 단면도Figure 1 is a perspective view of an embodiment of the present invention.
2 is a cross-sectional view according to an embodiment of the present invention.
3 is a conceptual diagram showing a manufacturing process according to an embodiment of the present invention
4 is a block diagram according to an embodiment of the present invention.
5 is a cross-sectional view showing an electrostatic chuck damaged by a conventional arcing

이에 본 발명의 구성을 첨부된 도면에 의하여 당업자가 용이하게 이해하고 재현할 수 있도록 상세하게 설명하면 다음과 같다.DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

도 1은 본 발명의 일 실시 예에 따른 사시도로서, 정전척(1)은 상부면은 세라믹으로 코팅되어 있으며, 상면에는 엠보싱을 구성하는 다수의 엠보싱 돌출부(16)가 형성되어 있으며, 다수의 가스홀(14)과 수 개의 리프트 핀홀(15)이 형성되어 있다.1 is a perspective view according to an embodiment of the present invention, the electrostatic chuck 1 is coated with a ceramic upper surface, a plurality of embossed protrusions 16 constituting the embossing is formed on the upper surface, a plurality of gases The hole 14 and several lift pinholes 15 are formed.

본원은 외관에서 종래의 것과 차이가 없으나 종래 기술의 문제점에서 도출된 바와 같이 아킹(Arcing) 현상에 노출되면 코팅된 세라믹의 기공을 통하여 알루미늄 베이스와 전기적으로 아크(Arc)가 발생하며 이는 세라믹의 손실에 의하여 균열 및 평탄도가 떨어지는 형상과 가스홀(14)이 막히는 현상이 일어나게 되는 문제점을 해결하고자 아킹 현상을 줄이도록 개선한 것이라고 할 수 있다.
The present application is not different from the conventional one in appearance, but as derived from the problems of the prior art, when exposed to the arcing phenomenon, an arc is electrically generated with the aluminum base through the pores of the coated ceramic, which causes loss of ceramic. It can be said that the improvement to reduce the arcing phenomenon in order to solve the problem that the cracks and flatness drop shape and the phenomenon that the gas hole 14 is clogged by.

도 2는 본 발명의 일 실시 예에 따른 단면도이고, 도 3은 본 발명의 일 실시 예에 따른 제조과정을 나타낸 개념도이며, 도 4는 본 발명의 일 실시 예에 따른 블록도로서, 정전척(1)의 기초가 되는 알루미늄 베이스(11)를 준비하는 단계와;2 is a cross-sectional view according to an embodiment of the present invention, Figure 3 is a conceptual diagram showing a manufacturing process according to an embodiment of the present invention, Figure 4 is a block diagram according to an embodiment of the present invention, an electrostatic chuck ( Preparing an aluminum base 11 on which 1) is based;

상기 알루미늄 베이스(11)의 상면에 고진공 상태에서 증발시켜 박막을 형성시키는 스퍼터링 장비를 이용하여 Si3N4를 코팅한 플라즈마 실링 코팅층(13)을 형성하는 단계와;Forming a plasma sealing coating layer (13) coated with Si3N4 by using a sputtering apparatus to form a thin film by evaporating in a high vacuum state on the upper surface of the aluminum base (11);

상기 플라즈마 실링 코팅층(13)의 위로 Y2O3 또는 Al2O3를 코팅하여 세라믹 코팅층(12)을 형성하는 단계와;Coating a Y2O3 or Al2O3 over the plasma sealing coating layer (13) to form a ceramic coating layer (12);

상기 세라믹 코팅층(12)을 형성한 후 상면의 평탄도 작업과 엠보싱을 형성하는 단계의 일련의 단계를 포함하여 이루어짐을 특징으로 하는 아킹 현상을 개선한 정전척 제조방법을 나타내었다.After forming the ceramic coating layer 12 has been shown a method of manufacturing an electrostatic chuck with improved arcing phenomenon, characterized in that it comprises a series of steps of the step of forming the flatness of the upper surface and embossing.

본원은 스퍼터링 방식에 의한 코팅층은 기공률이 없는 방법으로 내부의 알루미늄 베이스(11)가 외부 플라즈마상의 전하에 노출되는 것을 최대한 방지해주는 것으로 결론적으로 아킹 현상을 줄일 수 있는 방법인 것이다.In the present application, the coating layer by the sputtering method is a method that can reduce the arcing phenomenon as a result of preventing the internal aluminum base 11 from being exposed to the electric charge on the external plasma in the maximum porosity-free method.

이에 사용되는 물질은 Si3N4는 질화규소(Silicon nitride)를 말하는 것으로 전기 저항은 상온에서는 그다지 높지 않지만 고온이 되어도 저항값이 다른 세라믹스처럼 저하하지 않으므로 고온 전기 절연물로 적합한 소재라고 할 수 있다.The material used for this is Si3N4, which refers to silicon nitride, and the electrical resistance is not very high at room temperature, but the resistance value does not decrease like other ceramics even at high temperature, so it is a suitable material for high temperature electrical insulation.

이러한 질화규소에 의하여 알루미늄 베이스(11)를 전기적으로 차단하는 역할을 상기 플라즈마 실링 코팅층(13)이다.The plasma sealing coating layer 13 serves to electrically block the aluminum base 11 by the silicon nitride.

또한 Y2O3는 이드륨(Yttirium Oxide)를 말하는 것이며 Al2O3는 산화 알루미늄(aluminium oxide)을 말한다.
In addition, Y 2 O 3 refers to yttrium oxide and Al 2 O 3 refers to aluminum oxide.

1 : 정전척
11 : 알루미늄 베이스 12 : 세라믹 코팅층
13 : 플라즈마 실링 코팅층 14 : 가스홀
15 : 리프트 핀홀 16 : 엠보싱 돌출부1: electrostatic chuck
11: aluminum base 12: ceramic coating layer
13 plasma sealing coating layer 14 gas hole
15: lift pinhole 16: embossed protrusion

Claims (1)

정전척(1)의 기초가 되는 알루미늄 베이스(11)를 준비하는 단계와;
상기 알루미늄 베이스(11)의 상면에 고진공 상태에서 증발시켜 박막을 형성시키는 스퍼터링 장비를 이용하여 Si3N4를 코팅한 플라즈마 실링 코팅층(13)을 형성하는 단계와;
상기 플라즈마 실링 코팅층(13)의 위로 Y2O3 또는 Al2O3를 코팅하여 세라믹 코팅층(12)을 형성하는 단계와;
상기 세라믹 코팅층(12)을 형성한 후 상면의 평탄도 작업과 엠보싱을 형성하는 단계의 일련의 단계를 포함하여 이루어짐을 특징으로 하는 아킹 현상을 개선한 정전척 제조방법.Preparing an aluminum base 11 on which the electrostatic chuck 1 is based;
Forming a plasma sealing coating layer (13) coated with Si3N4 by using a sputtering apparatus to form a thin film by evaporating in a high vacuum state on the upper surface of the aluminum base (11);
Coating a Y2O3 or Al2O3 over the plasma sealing coating layer (13) to form a ceramic coating layer (12);
After forming the ceramic coating layer (12), the electrostatic chuck manufacturing method to improve the arcing phenomenon, characterized in that it comprises a series of steps of forming a flatness of the upper surface and forming the embossing.
KR1020120052839A 2012-05-18 2012-05-18 The electro-static chuck that can reduce a arcing KR20130128810A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020120052839A KR20130128810A (en) 2012-05-18 2012-05-18 The electro-static chuck that can reduce a arcing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020120052839A KR20130128810A (en) 2012-05-18 2012-05-18 The electro-static chuck that can reduce a arcing

Publications (1)

Publication Number Publication Date
KR20130128810A true KR20130128810A (en) 2013-11-27

Family

ID=49855809

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020120052839A KR20130128810A (en) 2012-05-18 2012-05-18 The electro-static chuck that can reduce a arcing

Country Status (1)

Country Link
KR (1) KR20130128810A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180127808A (en) 2017-05-22 2018-11-30 (주)코미코 Method for Reducing Arcing Electrostatic Chuck

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180127808A (en) 2017-05-22 2018-11-30 (주)코미코 Method for Reducing Arcing Electrostatic Chuck

Similar Documents

Publication Publication Date Title
JP7355884B2 (en) Electrostatic chuck assembly for high temperature processing
US10385459B2 (en) Advanced layered bulk ceramics via field assisted sintering technology
US20200325073A1 (en) Slurry plasma spray of plasma resistant ceramic coating
KR102422715B1 (en) Plasma erosion resistant rare-earth oxide based thin film coatings
TW201933530A (en) Electrostatic chuck assembly, electrostatic chuck, and focus ring
JP2018142714A (en) Single electrostatic chuck
KR20190064679A (en) Substrate support assembly having metal bonded protective layer
EP2400537A2 (en) Susceptor for plasma processing chamber
SG177584A1 (en) Light-up prevention in electrostatic chucks
TW201523787A (en) Wafer carrier for smaller wafers and wafer pieces
US20030165043A1 (en) Hybrid ceramic electrostatic clamp
TW201637094A (en) Method and apparatus for plasma dicing a semi-conductor wafer
CN104241183A (en) Manufacturing method of electrostatic suction cup, electrostatic suction cup and plasma processing device
KR20130128810A (en) The electro-static chuck that can reduce a arcing
JP3177210U (en) Plasma corrosion resistant material
KR20170138052A (en) Electrostatic chuck having properties for optimal thin film deposition or etch processes
CN104241182A (en) Manufacturing method of electrostatic suction cup, electrostatic suction cup and plasma processing device
TWI545995B (en) Inductively Coupled Plasma Processing Chamber and Corrosion Resistant Insulation Window and Manufacturing Method
CN107527852A (en) Ceramic electrostatic chuck device and its manufacturing process
WO2017148126A1 (en) Electrostatic chuck device
TW502368B (en) Electrostatic chuck and method for manufacturing the same
US11610800B2 (en) Capacitive method of detecting wafer chucking and de-chucking
KR20210100324A (en) Electrostatic Chuck and Manufacturing Method of The Same
KR20180078067A (en) Hybrid electrostatic chuck
US20240158944A1 (en) Porous chamber component coating augmented with colloids

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E601 Decision to refuse application