KR20130126321A - Intergrated circuit - Google Patents
Intergrated circuit Download PDFInfo
- Publication number
- KR20130126321A KR20130126321A KR1020120050360A KR20120050360A KR20130126321A KR 20130126321 A KR20130126321 A KR 20130126321A KR 1020120050360 A KR1020120050360 A KR 1020120050360A KR 20120050360 A KR20120050360 A KR 20120050360A KR 20130126321 A KR20130126321 A KR 20130126321A
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- KR
- South Korea
- Prior art keywords
- calibration
- unit
- control signal
- clock
- control
- Prior art date
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Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
- G11C7/222—Clock generating, synchronizing or distributing circuits within memory device
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
- G11C2207/22—Control and timing of internal memory operations
- G11C2207/2254—Calibration
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0005—Modifications of input or output impedance
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Abstract
An integrated circuit according to an embodiment of the present invention, the calibration unit for generating an impedance code for adjusting the termination impedance value; A control signal input unit which receives at least one control signal from an external source and is inactivated in an operation section of the calibration unit; And a calibration controller configured to decode the at least one control signal transmitted from the control signal input unit to activate / deactivate the operation of the calibration unit.
Description
The present invention relates to an integrated circuit using an impedance control circuit for generating an impedance code for adjusting an impedance value.
Various semiconductor devices implemented as integrated circuit chips such as CPUs, memories and gate arrays are incorporated into various electrical products such as personal computers, servers or workstations. In most cases, the semiconductor device has a receiving circuit for receiving various signals transmitted from the outside through an input pad and an output circuit for providing an internal signal to the outside through an output pad.
On the other hand, as the operating speed of electrical products is increased, the swing width of signals interfaced between semiconductor devices is gradually decreasing. The reason is to minimize the delay time for signal transmission. However, as the swing width of the signal decreases, the influence on external noise increases, and the reflection of the signal due to impedance mismatching (also referred to as mismatch) at the interface stage becomes more severe. The impedance mismatch occurs due to external noise, fluctuations in power supply voltage, change in operating temperature, change in manufacturing process, or the like. When impedance mismatching occurs, high-speed data transfer is difficult and output data output from the data output terminal of the semiconductor device may be distorted. Therefore, when the semiconductor device on the receiving side receives the distorted output signal to the input terminal, problems such as setup / hold fail or input level determination error may occur frequently.
In particular, a memory device requiring high speed of operation employs an impedance matching circuit called on die termination in the vicinity of a pad in an integrated circuit chip to solve the above problems. Typically, in an on die termination scheme, source termination by an output circuit is performed on the transmitting side, and parallel termination is performed by a termination circuit connected in parallel to the receiving circuit connected to the input pad on the receiving side.
ZQ calibration refers to the process of generating an impedance code that changes as the PVT (Process, Voltage, Temperature) process changes. The impedance code generated as a result of ZQ calibration To adjust the termination impedance value. In general, a pad to which an external resistor, which is a reference for calibration, is connected is called a ZQ pad (ZQ PAD). For this reason, the term ZQ calibration is mainly used. On the other hand, the configuration of the ZQ calibration circuit is well known to those skilled in the art as described in Korean Publication No. 10-2010-0006887, detailed description thereof will be omitted.
When a ZQ calibration operation is started in response to a ZQ calibration command, no signal (address, command, etc. in the case of a memory device) is allowed to be input from the outside during the ZQ calibration operation. This is because power noise may occur when a signal is input from the outside while the clock and the buffer are activated during the ZQ calibration operation, and such power noise may cause a calibration error. Therefore, in order to minimize the calibration error, the signal input from the outside should be restricted by deactivating the clock, the buffer, etc. during the ZQ calibration operation. An object of the present invention is to provide an integrated circuit capable of preventing a signal from being input from the outside by deactivating a clock, a buffer, and the like during a ZQ calibration operation.
An integrated circuit according to the present invention includes a calibration unit for generating an impedance code for adjusting a termination impedance value; A control signal input unit which receives at least one control signal from an external source and is inactivated in an operation section of the calibration unit; And a calibration controller configured to decode the at least one control signal transmitted from the control signal input unit to activate / deactivate the operation of the calibration unit.
In addition, the integrated circuit according to the present invention, the calibration unit for generating an impedance code for adjusting the termination impedance value; A calibration controller to decode at least one control signal to activate / deactivate an operation of the calibration unit; And an internal voltage generator which generates an internal voltage but is deactivated in an operation period of the calibration unit.
According to the present invention, the power supply noise can be minimized by deactivating the buffer, the clock, etc. during the ZQ calibration operation, thereby minimizing the calibration error.
1 illustrates an integrated circuit in accordance with an embodiment of the present invention.
2 is a diagram illustrating an embodiment of a control
3 is a diagram illustrating an embodiment of a
4 is a waveform diagram of a signal representing the operation of the integrated circuit shown in FIG.
5 illustrates an integrated circuit in accordance with another embodiment of the present invention.
Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings in order to facilitate a person skilled in the art to easily carry out the technical idea of the present invention.
1 illustrates an integrated circuit according to an embodiment of the present invention.
The integrated circuit may include a
The control
The
The
The
FIG. 2 is a diagram illustrating an embodiment of the control
The control
The buffer unit 110 buffers the address A <10> and the command CMD that are input from the outside and outputs the buffers to the
The
FIG. 3 is a diagram illustrating an embodiment of the
The
ZQ calibration control mode is the ZQINIT mode which is executed first after power-up, ZQOPER mode generated by the input from the controller during the operation of the integrated circuit, and ZQCS mode performed periodically during the operation of the integrated circuit, as shown in Table 1 below. It includes. The ZQINIT mode and ZQOPER mode are included in the ZQCL mode, and the calibration operation must be performed within at least 512 cycles in the ZQINIT mode, at least 256 cycles in the ZQOPER mode, and at least 64 cycles in the ZQCS mode.
The
The
4 is a waveform diagram of a signal representing an operation of the integrated circuit of FIG. 1. The overall operation of the integrated circuit shown in FIG. 1 together with FIG. 4 will be described.
The
The buffer unit 110 of the control
The
The
The
Meanwhile, the buffer unit 110 of the control
The
Meanwhile, although FIG. 1 illustrates a case in which both the buffer unit 110 and the
As a result, according to the present invention, at least one of the buffer unit 110 and the
5 is a diagram illustrating an integrated circuit according to another exemplary embodiment of the present invention.
The integrated circuit may include a
The configuration and operation principle of the
Since the configuration and operation principle of the
The
Since the
1 and 5 illustrate an example in which an integrated circuit according to the present invention is a memory device, this is only an example, and an integrated circuit using a calibration circuit and a configuration that receives signals from the outside, such as a buffer or a latch, may be used. The present invention can be applied to a circuit.
While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit and scope of the invention.
100: control signal input unit 200: calibration control unit
300: calibration unit 400: clock control unit
500: internal voltage generator
Claims (6)
A control signal input unit which receives at least one control signal from an external source and is inactivated in an operation section of the calibration unit; And
A calibration controller for decoding / activating the at least one control signal transmitted from the control signal input unit to activate / deactivate the operation of the calibration unit.
≪ / RTI >
The integrated circuit is a memory device,
The at least one control signal includes an address and a command.
Integrated circuit.
The control signal input unit,
A buffer unit which buffers and outputs the address and the command, but which is deactivated in an operation period of the calibration unit;
A latch unit for latching the address and the command outputted from the buffer unit in synchronization with a control clock
≪ / RTI >
A clock control unit which receives a clock and outputs the control clock of the first level in the operation section of the calibration unit, and outputs the input clock as the control clock in other sections.
≪ / RTI >
The calibration control unit,
Decoding to decode the command to activate a first calibration control signal if the address is deactivated and to activate a second calibration control signal if the address is deactivated when the decoded command corresponds to a calibration command. Wealth and
An activation signal generator configured to activate a calibration activation signal, the activation width of which is determined according to an activated signal of the first calibration control signal and the second calibration control signal, using the clock;
The calibration unit is operated in response to the calibration activation signal
Integrated circuit.
A calibration controller to decode at least one control signal to activate / deactivate an operation of the calibration unit; And
An internal voltage generator that generates an internal voltage but is deactivated in an operation section of the calibration unit.
≪ / RTI >
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020120050360A KR20130126321A (en) | 2012-05-11 | 2012-05-11 | Intergrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020120050360A KR20130126321A (en) | 2012-05-11 | 2012-05-11 | Intergrated circuit |
Publications (1)
Publication Number | Publication Date |
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KR20130126321A true KR20130126321A (en) | 2013-11-20 |
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Family Applications (1)
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KR1020120050360A KR20130126321A (en) | 2012-05-11 | 2012-05-11 | Intergrated circuit |
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KR (1) | KR20130126321A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20160049830A (en) * | 2014-10-28 | 2016-05-10 | 에스케이하이닉스 주식회사 | Calibration circuit and calibration apparatus including the same |
US10860258B2 (en) | 2015-12-24 | 2020-12-08 | SK Hynix Inc. | Control circuit, memory device including the same, and method |
US11036396B2 (en) | 2016-04-19 | 2021-06-15 | SK Hynix Inc. | Media controller and data storage apparatus including the same |
US11082043B2 (en) | 2014-10-28 | 2021-08-03 | SK Hynix Inc. | Memory device |
USRE49496E1 (en) | 2015-07-30 | 2023-04-18 | SK Hynix Inc. | Semiconductor device |
US11755255B2 (en) | 2014-10-28 | 2023-09-12 | SK Hynix Inc. | Memory device comprising a plurality of memories sharing a resistance for impedance matching |
-
2012
- 2012-05-11 KR KR1020120050360A patent/KR20130126321A/en not_active Application Discontinuation
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20160049830A (en) * | 2014-10-28 | 2016-05-10 | 에스케이하이닉스 주식회사 | Calibration circuit and calibration apparatus including the same |
US10897253B2 (en) | 2014-10-28 | 2021-01-19 | SK Hynix Inc. | Calibration circuit and calibration apparatus including the same |
US11082043B2 (en) | 2014-10-28 | 2021-08-03 | SK Hynix Inc. | Memory device |
US11755255B2 (en) | 2014-10-28 | 2023-09-12 | SK Hynix Inc. | Memory device comprising a plurality of memories sharing a resistance for impedance matching |
USRE49496E1 (en) | 2015-07-30 | 2023-04-18 | SK Hynix Inc. | Semiconductor device |
US10860258B2 (en) | 2015-12-24 | 2020-12-08 | SK Hynix Inc. | Control circuit, memory device including the same, and method |
US11347444B2 (en) | 2015-12-24 | 2022-05-31 | SK Hynix Inc. | Memory device for controlling operations according to different access units of memory |
US11036396B2 (en) | 2016-04-19 | 2021-06-15 | SK Hynix Inc. | Media controller and data storage apparatus including the same |
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