KR20130125146A - Wavelength converting layer manufacturing apparatus and method of manufacturing the same - Google Patents

Wavelength converting layer manufacturing apparatus and method of manufacturing the same Download PDF

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Publication number
KR20130125146A
KR20130125146A KR1020120048674A KR20120048674A KR20130125146A KR 20130125146 A KR20130125146 A KR 20130125146A KR 1020120048674 A KR1020120048674 A KR 1020120048674A KR 20120048674 A KR20120048674 A KR 20120048674A KR 20130125146 A KR20130125146 A KR 20130125146A
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South Korea
Prior art keywords
conversion layer
wavelength conversion
light emitting
thickness
color coordinates
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KR1020120048674A
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Korean (ko)
Inventor
김남승
Original Assignee
삼성전자주식회사
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Priority to KR1020120048674A priority Critical patent/KR20130125146A/en
Publication of KR20130125146A publication Critical patent/KR20130125146A/en

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements

Abstract

A wavelength conversion layer forming device according to one embodiment of the present invention comprises a support which supports a wafer in which multiple light emitting structures covered by a wavelength conversion layer is formed; a cutting part which is disposed on the support and controls the thickness by cutting the surface of the wavelength conversion layer; a light detection part which is disposed on the support and measures a color coordinate of the wavelength conversion layer with the controlled thickness by the cutting part; and a control part which controls the operation of the cutting part and the light detection part.

Description

WAVELENGTH CONVERTING LAYER MANUFACTURING APPARATUS AND METHOD OF MANUFACTURING THE SAME

The present invention relates to a wavelength conversion layer forming apparatus and a wavelength conversion layer forming method using the same.

In general, a light emitting device package implements a white chip through a process of dispensing a resin containing a phosphor on a light emitting diode chip in a reflection cup of a package body. Therefore, a method of implementing a chip separation and packaging process after implementing a white chip has been applied. In this method, white color coordinates are determined by the fluorescent layer coated at the wafer level, and one of the important variables is the thickness of the fluorescent layer formed on the chip.

In the current wafer level coating (WLC) process, the thickness of the fluorescent layer is determined by a fluorescent layer cutting process using a cutting facility such as a surface planer. Then, the cut fluorescent layer is loaded in a separate optical measuring equipment to measure color coordinates, and the wafer is loaded into the cutting equipment again in order to match the target color coordinates, and the cutting and planarization processes are performed.

Therefore, in the art, even after the cutting and planarization process and the optical measurement process, a slight difference does not occur in the thickness of the wavelength conversion layer, thereby improving the reliability of the thickness of the wavelength conversion layer, thereby minimizing the dispersion of the color coordinate center value. There is a need for a wavelength conversion layer forming apparatus and a wavelength conversion layer forming method using the same.

The wavelength conversion layer forming apparatus according to an embodiment of the present invention,

A support for supporting a wafer on which a plurality of light emitting structures covered with the wavelength conversion layer are formed; A cutting unit disposed on the support and cutting the surface of the wavelength conversion layer to adjust a thickness; A photodetector disposed on the support and measuring the color coordinates of the wavelength conversion layer whose thickness is adjusted by the cutting unit; And a control unit controlling the operations of the cutting unit and the photodetector.

The light detector may receive the emitted light of the light emitting structure and measure the color coordinates.

The apparatus may further include a driver configured to emit current by applying current to each of the plurality of light emitting structures.

The controller may compare the color coordinates measured by the light detector with the target color coordinates, calculate a thickness value corresponding to the difference, and drive the cutting unit to cut the wavelength conversion layer by the calculated thickness value. have.

On the other hand, the wavelength conversion layer forming method according to an embodiment of the present invention,

Disposing a wafer on which a plurality of light emitting structures covered with the wavelength conversion layer are formed; Measuring the thickness of the wavelength conversion layer with the wafer disposed on the support; Measuring color coordinates of the wavelength conversion layer while the wafer is disposed on the support; And comparing the measured color coordinates with a predetermined target color coordinate in a state where the wafer is disposed on the support, and corresponding to the excess thickness from the thickness of the wavelength conversion layer measured to reach the target color coordinate. And cutting the surface of the wavelength conversion layer.

The measuring of the color coordinates may include: emitting light by applying current to the plurality of light emitting structures; And detecting the emitted light through a photodetector disposed on the wafer.

In the measuring of the color coordinates, each of the light emitting structures may be exposed to the probe pins by exposing the electrodes provided in the plurality of light emitting structures from the wavelength conversion layer, and light may be emitted by applying a current through the probe pins. have.

In addition, the electrodes of the plurality of light emitting structures may have a photoresist formed on a surface thereof and are not covered by the wavelength conversion layer, and the photoresist may be removed to expose the electrodes.

In addition, electrodes of the plurality of light emitting structures may be in contact with the probe pin through the stud bumps electrically connected to the electrodes without stud bumps formed on the surface thereof and covered by the wavelength conversion layer.

In addition, exposing the electrode may be performed prior to the step of measuring the thickness.

The method may further include cutting the surface of the wavelength conversion layer before measuring the thickness of the wavelength conversion layer.

The method may further include measuring the color coordinates of the cut wavelength converting layer.

In addition, the solution of the above-mentioned problems does not list all the features of the present invention. The various features of the present invention and the advantages and effects thereof will be more fully understood by reference to the following specific embodiments.

A method of manufacturing a light emitting device package in which a small difference does not occur in the thickness of the wavelength conversion layer even after the cutting and planarization process and the optical measurement process, thereby improving the reliability of the thickness of the wavelength conversion layer and thus minimizing the dispersion of the color coordinate center value. This may be provided.

Various and advantageous advantages and effects of the present invention are not limited to the above description, and will be more readily understood in the course of describing specific embodiments of the present invention.

1 is a view schematically showing a wavelength conversion layer forming apparatus according to an embodiment of the present invention.
FIG. 2 is a view schematically illustrating a cutting unit in FIG. 1.
FIG. 3 is a schematic view of a wafer that is a workpiece in FIG. 1.
4A to 4D schematically illustrate step-by-step methods of forming a wavelength conversion layer according to an embodiment of the present invention.
5A to 5D schematically illustrate step-by-step a method of forming a wavelength conversion layer according to another embodiment of the present invention.
6 is a diagram schematically illustrating a color coordinate correction principle according to an embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

However, embodiments of the present invention may be modified in various other forms, and the scope of the present invention is not limited to the embodiments described below.

Further, the embodiments of the present invention are provided to more fully explain the present invention to those skilled in the art.

Accordingly, the shape and size of elements in the drawings may be exaggerated for clarity, and the elements denoted by the same reference numerals in the drawings are the same elements.

A wavelength conversion layer forming apparatus according to an embodiment of the present invention will be described with reference to FIGS. 1 and 2. 1 is a view schematically showing a wavelength conversion layer forming apparatus according to an embodiment of the present invention, Figure 2 is a view schematically showing a cutting portion in FIG.

Referring to FIG. 1, the wavelength conversion layer forming apparatus 1 according to an exemplary embodiment of the present invention may include a support 10, a cutting unit 20, a light detector 30, and a controller 40. have.

The support 10 is a kind of chuck that supports the wafer 110 on which the plurality of light emitting structures 120 covered with the wavelength conversion layer 130, which is the workpiece 100, is formed. The support 10 may be connected to a vacuum pump (not shown) to fix the wafer 110 disposed on the upper surface thereof to a vacuum. In addition, it may be connected to the rotating device not shown to drive the rotation.

The cutting unit 20 is disposed on the support 10, and cuts the surface of the wavelength conversion layer 130 to adjust its thickness. The cutting unit 20 is installed in parallel with the support 10, the spindle (spindle) 21 to rotate and drive through a motor (not shown), and the bite mounted to be detachable to the spindle 21 ( bite) 22.

The photodetector 30 is disposed on the support 10, and measures the color coordinates of the wavelength conversion layer 130 whose thickness is adjusted by the cutting unit 20. The photodetector 30 may include, for example, a photodetector such as a spectrometer.

The light detector 30 receives the light emitted from the light emitting structure 120 and emitted through the wavelength conversion layer 130 (wavelength is converted), and measures the color coordinates of the emitted light. .

The controller 40 controls the operations of the cutting unit 20 and the light detecting unit 30. The controller 40 compares the color coordinates measured by the light detector 30 with a predetermined target color coordinate, and calculates a thickness value of the wavelength conversion layer 130 corresponding to the difference. In addition, the cutting unit 20 is driven to cut the wavelength conversion layer 130 by the calculated thickness value. Here, the initial thickness data of the wavelength conversion layer 130 may be previously input to the controller 40 through thickness measurement.

Meanwhile, the wavelength conversion layer forming apparatus 1 according to the present embodiment uses the light emitting structure 120 to allow the photodetector 30 to measure color coordinates through the emitted light of the light emitting structure 120. It may further include a driver 50 for emitting light. The driving unit 50 may include a probe pin 51 connected to an external power source, and emits the light emitting structure 120 by applying a current to each of the plurality of light emitting structures 120. The driving unit 50 may be controlled by the control unit 40 similarly to the cutting unit 20 and the light detecting unit 30.

As described above, the wavelength conversion layer forming apparatus 1 according to the present embodiment is a cutting for cutting the surface of the support 10 on which the workpiece 100 is fixed and the workpiece 100 fixed on the support 10. The unit 20, the photodetector 30 for measuring the color coordinates of the workpiece 100 fixed on the support 10, and the control unit 40 for controlling the operation thereof are integrally united into a single device, thereby conventionally As described above, a complicated process such as loading and measuring a wafer loaded in the planarization facility into an optical measurement facility, which is a separate facility, and loading the planarization facility again for cutting may be omitted, thereby simplifying and facilitating the process. . In addition, it is also possible to solve the problem that a slight error may occur in the thickness due to the positional change of the wafer in the process of loading and unloading each facility.

Hereinafter, a wavelength conversion layer forming method according to an embodiment of the present invention will be described with reference to FIGS. 3 and 4.

FIG. 3 is a view schematically showing a wafer as a workpiece in FIG. 1, and FIGS. 4A to 4D are views schematically showing a wavelength conversion layer forming method according to an embodiment of the present invention. It is a figure which shows schematically the principle of color coordinate correction which concerns on embodiment of this invention.

First, as shown in FIG. 3, the wafer 110 on which the plurality of light emitting structures 120 covered with the wavelength conversion layer 130 is formed is disposed on the support 10. The support 10 is a kind of chuck to support the wafer 110 on which the wavelength conversion layer 130, which is the workpiece 100, is formed. The support 10 may be connected to a vacuum pump (not shown) to fix the wafer 110 disposed on the upper surface thereof to a vacuum. In addition, it may be connected to the rotating device not shown to drive the rotation.

The wafer 110 is provided as a semiconductor single crystal growth substrate and may be made of sapphire or the like, but may be made of other materials such as glass in addition to sapphire.

The light emitting structure 120 is a kind of semiconductor light emitting device that emits light by applying external power, and is formed on the wafer 110 to form a light emitting diode chip. The light emitting structure 120 may include a stack structure of a plurality of semiconductor layers, and a plurality of light emitting structures 120 may be formed on the wafer 110. In this case, the plurality of light emitting structures 120 may be spaced apart from each other at predetermined intervals in the horizontal and vertical directions, respectively. The light emitting structure 120 may be formed by depositing and stacking a semiconductor layer on the wafer 110 through a chemical vapor deposition apparatus.

The light emitting structure 120 may have a stacked structure of a first conductive semiconductor layer 121 and a second conductive semiconductor layer 123 and an active layer 122 formed therebetween. The first conductive semiconductor layer 121 may be an n-type nitride semiconductor layer, and the second conductive semiconductor layer 123 may be a p-type nitride semiconductor layer. The first and second conductivity-type semiconductor layers 121 and 123 are Al x In y Ga (1-xy) N composition formulas, where 0 ≦ x ≦ 1, 0 ≦ y ≦ 1, and 0 ≦ x + y ≦ 1. ), And for example, a material such as GaN, AlGaN, InGaN, AlInGaN, and the like. The active layer 122 formed between the first and second conductivity-type semiconductor layers 121 and 123 emits light having a predetermined energy by recombination of electrons and holes, and the quantum well layer and the quantum barrier layer alternate with each other. A multi-quantum well (MQW) structure, for example, InGaN / GaN structure, can be used.

On the exposed surface of the first conductive semiconductor layer 121 and the one surface of the second conductive semiconductor layer 123, electrodes 124, for example, n-type and p-type electrodes 124a and 124b are formed, respectively. And can be electrically connected. Each of the electrodes 124 has a photoresist 200 or stud bump 200 ′ formed on its surface and is not covered by the wavelength conversion layer 130 described below. That is, the wavelength conversion layer 130 covering the light emitting structure 120 covers the surface of the light emitting structure 120 except for the electrode 124 having the photoresist 200 or the stud bump 200 ′ formed on the surface thereof. It may be provided in a structure.

The wavelength conversion layer 130 is formed on the light emitting structure 120 to perform a function of converting the wavelength of light emitted from the light emitting structure 120. For this purpose, a structure in which at least one kind of phosphor is dispersed in the transparent resin can be used. The wavelength conversion layer 130 may be formed by curing the transparent resin injected on the wafer 110 through a dispenser or the like, or may be formed by coating by a printing method.

The light converted by the wavelength conversion layer 130 may be mixed with the light emitted from the light emitting structure 120 to realize white light. For example, when the light emitting structure 120 emits blue light, a yellow phosphor may be used. When the light emitting structure 120 emits ultraviolet light, red, green, and blue phosphors may be mixed and used. In addition, the color of the light emitting structure 120 and the phosphor may be variously combined to emit white light. In addition, a light source that emits only the wavelength conversion material such as green or red and emits the corresponding color may be implemented even if it is not necessarily white.

Specifically, when blue light is emitted from the light emitting structure 120, red phosphors include nitride phosphors of MAlSiNx: Re (1 ≦ x ≦ 5) and sulfide phosphors of MD: Re. Wherein M is at least one selected from among Ba, Sr, Ca and Mg, D is at least one selected from S, Se and Te and Re is Eu, Y, La, Ce, Nd, Pm, Sm, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, F, Cl, Br and I. The green phosphors include silicate-based phosphors of M 2 SiO 4 : Re, sulfide phosphors of MA 2 D 4 : Re, phosphors of β-SiAlON: Re, and oxide phosphors of MA ' 2 O 4 : Re' , M is at least one element selected from Ba, Sr, Ca and Mg, A is at least one selected from Ga, Al and In, D is at least one selected from S, Se and Te, A ' At least one selected from the group consisting of Gd, La, Lu, Al and In, and Re is at least one selected from the group consisting of Eu, Y, La, Ce, Nd, Pm, Sm, Gd, Tb, Dy, Ho, Er, Tm, Yb, Cl, Br and I, and Re 'may be at least one selected from Ce, Nd, Pm, Sm, Tb, Dy, Ho, Er, Tm, Yb, F, Cl, Br and I.

On the other hand, the quantum dot (Quantum Dot) may be provided in the wavelength conversion layer 130 to replace the phosphor or together with the phosphor. Quantum dots are nanocrystal particles consisting of a core and a shell, and have a core size ranging from about 2 mm to 100 nm. The quantum dot can be used as a fluorescent material emitting various colors such as blue (B), yellow (Y), green (G) and red (R) by adjusting the size of the core. (ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, HgS, HgSe, HgTe and MgTe) and Group III-V compound semiconductors (GaN, GaP, GaAs, GaSb, InN, InP, InAs, InSb, , AlSb, AlS, and the like) or a Group IV semiconductor (Ge, Si, Pb, and the like) are bonded to each other to form a core and a shell structure constituting quantum dots. In this case, in order to terminate the molecular bonding of the shell surface to the outer shell of the quantum dots, to suppress the aggregation of the quantum dots, to improve dispersibility in the resin such as silicon resin or epoxy resin, or to improve the function of the phosphor, acid to form an organic ligand. Hereinafter, even when the phosphor is used as the wavelength conversion material, the phosphor may be replaced with a quantum dot or a quantum dot may be added to the phosphor.

Next, as shown in FIG. 4A, the surface of the wavelength conversion layer 130 on the wafer 110 disposed on the support 10 is cut and planarized. Cutting of the surface of the wavelength conversion layer 130 may be performed by the cutting unit 20 disposed on the support 10, and cuts the surface of the wavelength conversion layer 130 to adjust its thickness. The driving of the cutting unit 20 is controlled through the control unit 40.

The cutting unit 20 has a spindle 21 installed in parallel with the support 10 to rotate by a motor not shown, and the bite 22 mounted to be detachable to the spindle 21. It may include. The bite 22 may be in contact with the surface of the wavelength conversion layer 130 to cut the surface of the wavelength conversion layer 130 by μm by the rotation of the spindle 21.

Meanwhile, in the process of cutting the surface of the wavelength conversion layer 130, a part of the photoresist 200 is also cut together with a part of the wavelength conversion layer 130, and the cut surface of the wavelength conversion layer 130 is cut. As a result, the photoresist 200 may be exposed.

Next, as shown in FIG. 4B, the thickness of the wavelength conversion layer 130 whose surface is cut is measured. In this case, prior to measuring the thickness, a process (PR strip) for removing the photoresist 200 exposed to the surface of the cut wavelength conversion layer 130 may be additionally performed first. The photoresist 200 exposed to the surface of the wavelength conversion layer 130 may be removed through a general etching method, and the wavelength conversion layer may be exposed while the electrode 124 is exposed through the removal of the photoresist 200. Measure the thickness of 130. The measurement of the thickness may be controlled by the controller 40, and the measured thickness data is stored in the controller 40.

In the present embodiment, the thickness of the wavelength conversion layer 130 is measured in the state where the electrode 124 is exposed by removing the photoresist 200, but the present invention is not limited thereto. That is, the order can be changed by removing the photoresist 200 after measuring the thickness.

Next, as illustrated in FIG. 4C, the color coordinates of the wavelength conversion layer 130 having the surface cut in the state in which the wafer 110 is disposed on the support 10 are measured. The color coordinates may be measured by the light detector 30 disposed on the support 10, and the color coordinates of the wavelength conversion layer 130 whose surface is cut by the cutting unit 20 and whose thickness is adjusted. Measure The photodetector 30 may include, for example, a photodetector such as a spectrometer. The driving of the photodetector 30 is controlled by the controller 40.

The photodetector 30 receives the light L emitted from the light emitting structure 120 and passed through the wavelength conversion layer 130 (wavelength is converted), and the light L emitted through the light detector 120. Measure the color coordinates of Specifically, the probe pin 51 of the driving unit 50 is in contact with the electrodes 124 provided in the plurality of light emitting structures 120 exposed from the wavelength conversion layer 130, and the probe pin 51 A current is applied to the light emitting structures 120 to emit light. In addition, the light detector 30 disposed on the wafer 110 is positioned above the light emitting structure 120 to receive the emitted light L, and to measure color coordinates.

Next, as shown in FIG. 4D, when the measured color coordinates are different from the preset target color coordinates while the wafer 110 is disposed on the support 10, the target target color coordinates are reached. The thickness of the wavelength conversion layer 130 is cut by adjusting the thickness of the wavelength conversion layer 130 to correspond to the excess thickness from the measured thickness of the wavelength conversion layer 130.

In detail, the controller 40 compares the color coordinates measured by the light detector 30 with a target color coordinate set as a target, and calculates a thickness value of the wavelength conversion layer 130 corresponding to the difference. Then, the cutting unit 20 is driven to cut the surface of the wavelength conversion layer 130 by the calculated thickness value, and the cutting process is performed on the surface of the wavelength conversion layer 130 again. In addition, the color coordinates of the wavelength conversion layer 130 whose thickness is adjusted by being recut through the photodetector 30 are measured again, and the controller 40 compares the measured color coordinates with the target color coordinates.

6 is a diagram schematically illustrating a color coordinate correction principle according to an embodiment of the present invention. As shown in FIG. 6, the process of cutting the surface of the wavelength conversion layer to adjust the thickness, measuring the color coordinates, and comparing the measured color coordinates A1 and A2 with the preset target color coordinates A3 are repeated. Through the target color coordinates (A3) can be reached through (A1 → A2 → A3).

In particular, in the present embodiment, the cutting unit 20 corresponding to the planarization facility and the light detection unit 30 corresponding to the optical measurement facility are united into a single device to load and load the wafer, which is the workpiece 100, according to each process. The process may be repeatedly performed while fixed on a single support 10 without the need for unloading.

This eliminates the hassle of loading and unloading wafers according to each process, since the planarization equipment and the optical measuring equipment are separately provided as in the prior art, and also change in the position of the wafer as loading and unloading of each wafer. There is a problem that a slight difference between the thickness of the wavelength conversion layer measured in the optical measuring equipment and the thickness of the wavelength conversion layer reloaded in the planarization equipment can be solved.

5A to 5D schematically illustrate step-by-step a method of forming a wavelength conversion layer according to another embodiment of the present invention. The method shown in Figs. 5A to 5D is similar to the method shown in Figs. 4A to 4D. Therefore, detailed description of overlapping portions will be omitted.

First, as shown in FIG. 3, the wafer 110 on which the plurality of light emitting structures 120 covered with the wavelength conversion layer 130 is formed is disposed on the support 10. The support 10 may be connected to a vacuum pump (not shown) to fix the wafer 110 disposed on the upper surface thereof to a vacuum. In addition, it may be connected to the rotating device not shown to drive the rotation.

The light emitting structure 120 may have a stack structure of a plurality of semiconductor layers, and a plurality of light emitting structures 120 may be formed on the wafer 110. The light emitting structure 120 may have a stacked structure of a first conductive semiconductor layer 121 and a second conductive semiconductor layer 123 and an active layer 122 formed therebetween. The first conductive semiconductor layer 121 may be an n-type nitride semiconductor layer, and the second conductive semiconductor layer 123 may be a p-type nitride semiconductor layer.

N-type and p-type electrodes 124a and 124b, which are electrodes 124, are formed on exposed surfaces of the first conductive semiconductor layer 121 and one surface of the second conductive semiconductor layer 123, respectively, so as to be electrically connected to each semiconductor layer. Can be connected. Stud bumps 200 ′ are formed on the surfaces of the electrodes 124 and are not covered by the wavelength conversion layer 130. That is, the wavelength conversion layer 130 covering the light emitting structure 120 may be provided to cover the surface of the light emitting structure 120 except for the electrode 124 formed on the surface of the stud bump 200 ′. .

Next, as shown in FIG. 5A, the surface of the wavelength conversion layer 130 on the wafer 110 disposed on the support 10 is cut and planarized. Cutting of the surface of the wavelength conversion layer 130 may be performed by the cutting unit 20 disposed on the support 10, and cuts the surface of the wavelength conversion layer 130 to adjust its thickness. The driving of the cutting unit 20 is controlled through the control unit 40.

A portion of the stud bumps 200 'may also be cut together while the surface of the wavelength conversion layer 130 is cut, and the stud bumps 200' may be exposed to the cut surface of the wavelength conversion layer 130. FIG. have.

Next, as illustrated in FIG. 5B, the thickness of the wavelength conversion layer 130 cut while the wafer 110 is disposed on the support 10 is measured. In this embodiment, since the stud bumps 200 'are formed on the electrodes 124 instead of the photoresist 200, the process of removing the photoresist 200 as described above in FIG. 4B is omitted.

Accordingly, the electrode 124 is not directly exposed from the wavelength conversion layer 130 as in FIG. 4C, but is indirectly exposed through the stud bump 200 ′. As such, the thickness of the wavelength conversion layer 130 is measured while the stud bump 200 ′ is exposed to the surface of the wavelength conversion layer 130. The measurement of the thickness may be controlled by the controller 40, and the measured thickness data is stored in the controller 40.

Next, as shown in FIG. 5C, the color coordinates of the wavelength conversion layer 130 whose thickness is adjusted by cutting the surface of the wafer 110 in the state where the wafer 110 is disposed on the support 10 are measured. The color coordinate may be measured by the light detector 30 disposed on the support 10, and measures the color coordinates of the wavelength conversion layer 130 whose thickness is adjusted by the cutting unit 20. The driving of the photodetector 30 is controlled by the controller 40.

The light detector 30 receives the light L emitted from the light emitting structure 120 and passed through the wavelength conversion layer 130 (wavelength is converted), and thereby the wavelength conversion layer 130. Measure the color coordinate of). Specifically, one end is electrically connected to the electrodes 124 respectively provided in the plurality of light emitting structures 120, the other end of the driving unit 50 to the stud bump 200 'exposed from the wavelength conversion layer 130 The probe pins 51) are brought into contact with each other, and current is applied through the probe pins 51 to emit light of the light emitting structures 120. In addition, the light detector 30 disposed on the wafer 110 is positioned above the light emitting structure 120 to receive the emitted light L, and to measure color coordinates.

Next, as shown in FIG. 5D, the surface of the wavelength conversion layer 130 is recut by cutting the thickness corresponding to the excess thickness from the thickness of the wavelength conversion layer 130 measured to reach the target target color coordinate. To adjust the thickness.

In detail, the controller 40 compares the color coordinates measured by the light detector 30 with the target color coordinates, and calculates a thickness value of the wavelength conversion layer 130 corresponding to the difference. Then, the cutting unit 20 is driven to cut the surface of the wavelength conversion layer 130 by the calculated thickness value, thereby recutting the surface of the wavelength conversion layer 130. In addition, the color coordinates of the wavelength conversion layer 130 whose thickness is adjusted by being recut through the photodetector 30 are measured again, and the controller 40 compares the measured color coordinates with the target color coordinates.

The present invention is not limited to the above-described embodiments and the accompanying drawings, but is intended to be limited by the appended claims.

It will be apparent to those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. something to do.

1 ... wavelength conversion layer forming apparatus 10 ... support
20 ... cutting part 30 ... photodetection part
40 ... control section 50 ... drive section
100 Workpiece 110 ... Wafer
120 ... light emitting structure 130 ... wavelength conversion layer
200 ... photoresist 200 '... stud bump

Claims (12)

A support for supporting a wafer on which a plurality of light emitting structures covered with the wavelength conversion layer are formed;
A cutting unit disposed on the support and cutting the surface of the wavelength conversion layer to adjust a thickness;
A photodetector disposed on the support and measuring the color coordinates of the wavelength conversion layer whose thickness is adjusted by the cutting unit; And
A control unit for controlling the operation of the cutting unit and the light detection unit;
Wavelength conversion layer forming apparatus comprising a.
The method of claim 1,
And the photodetector receives the emitted light of the light emitting structure and measures the color coordinates thereof.
The method of claim 1,
And a driving unit for applying a current to each of the plurality of light emitting structures to emit light of the light emitting structures.
The method of claim 1,
The control unit compares the color coordinates measured by the light detector with the target color coordinates, calculates a thickness value corresponding to the difference, and drives the cutting unit to cut the wavelength conversion layer by the calculated thickness value. Wavelength conversion layer forming apparatus.
Disposing a wafer on which a plurality of light emitting structures covered with the wavelength conversion layer are formed;
Measuring the thickness of the wavelength conversion layer with the wafer disposed on the support;
Measuring color coordinates of the wavelength conversion layer while the wafer is disposed on the support; And
When there is a difference comparing the measured color coordinates with a predetermined target color coordinate in a state where the wafer is placed on the support, the wavelength corresponds to an excess thickness from the thickness of the wavelength conversion layer measured to reach the target color coordinate. Cutting the surface of the conversion layer;
Wavelength conversion layer forming method comprising a.
The method of claim 5,
Measuring the color coordinates,
Emitting light by applying current to the plurality of light emitting structures; And
And detecting the emitted light through a photodetector disposed on the wafer.
The method according to claim 6,
Measuring the color coordinates,
And exposing an electrode provided in each of the plurality of light emitting structures from the wavelength converting layer to be in contact with the probe pin, and applying light through the probe pin to emit light of each light emitting structure.
The method of claim 7, wherein
The electrode of the plurality of light emitting structures is a photoresist formed on the surface thereof is not covered by the wavelength conversion layer, the wavelength conversion layer forming method characterized in that to remove the photoresist to expose the electrode.
The method of claim 7, wherein
The electrode of the plurality of light emitting structures has a stud bump formed on a surface thereof and is not covered by the wavelength conversion layer, and is in contact with the probe pin through the stud bump electrically connected to the electrode. Layer formation method.
The method of claim 7, wherein
Exposing the electrode prior to the step of measuring the thickness.
The method of claim 5,
And cutting the surface of the wavelength conversion layer before measuring the thickness of the wavelength conversion layer.
The method of claim 5,
And re-measuring the color coordinates of the cut wavelength converting layer.
KR1020120048674A 2012-05-08 2012-05-08 Wavelength converting layer manufacturing apparatus and method of manufacturing the same KR20130125146A (en)

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US9368694B2 (en) 2014-10-06 2016-06-14 Samsung Electronics Co., Ltd. Method of fabricating light-emitting device package

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9368694B2 (en) 2014-10-06 2016-06-14 Samsung Electronics Co., Ltd. Method of fabricating light-emitting device package

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