KR20130120738A - Photovoltaic apparatus - Google Patents

Photovoltaic apparatus Download PDF

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Publication number
KR20130120738A
KR20130120738A KR1020120043857A KR20120043857A KR20130120738A KR 20130120738 A KR20130120738 A KR 20130120738A KR 1020120043857 A KR1020120043857 A KR 1020120043857A KR 20120043857 A KR20120043857 A KR 20120043857A KR 20130120738 A KR20130120738 A KR 20130120738A
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South Korea
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layer
disposed
solar cells
connection wiring
back electrode
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KR1020120043857A
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Korean (ko)
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KR101349571B1 (en
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오준재
장대진
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엘지이노텍 주식회사
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
    • H02S40/30—Electrical components
    • H02S40/36—Electrical components characterised by special electrical interconnection means between two or more PV modules, e.g. electrical module-to-module connection
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

A photovoltaic device is disclosed. The photovoltaic device includes a support substrate; A connection wiring layer disposed on the support substrate; An insulation layer disposed on the connection wiring layer; A back electrode layer disposed on the insulating layer; A light absorbing layer disposed on the rear electrode layer; And a front electrode layer disposed on the light absorbing layer, wherein the back electrode layer is electrically connected to the connection wiring layer.

Description

Solar power generation device {PHOTOVOLTAIC APPARATUS}

Embodiments relate to a photovoltaic device and a method of manufacturing the same.

A manufacturing method of a solar cell for solar power generation is as follows. First, a substrate is provided, a rear electrode layer is formed on the substrate, and then a light absorption layer, a buffer layer and a high-resistance buffer layer are sequentially formed on the rear electrode layer. A method of forming a light absorbing layer of copper-indium-gallium-selenide (Cu (In, Ga) Se 2 ; CIGS system) while evaporating copper, indium, gallium and selenium simultaneously or separately in order to form the light absorbing layer And a method of forming a metal precursor film by a selenization process are widely used. The energy band gap of the light absorbing layer is about 1 to 1.8 eV.

Thereafter, a buffer layer containing cadmium sulfide (CdS) is formed on the light absorbing layer by a sputtering process. The energy bandgap of the buffer layer is about 2.2 to 2.4 eV. Thereafter, a high resistance buffer layer including zinc oxide (ZnO) is formed on the buffer layer by a sputtering process. The energy bandgap of the high resistance buffer layer is about 3.1 to 3.3 eV.

Thereafter, a transparent conductive material is laminated on the high-resistance buffer layer, and a transparent electrode layer is formed on the high-resistance buffer layer. Examples of the material used as the transparent electrode layer include aluminum doped zinc oxide. The energy band gap of the transparent electrode layer is about 3.1 to 3.3 eV.

In such a photovoltaic device, various studies have been made to improve the photoelectric conversion efficiency by adjusting the band gap energy in the light absorbing layer.

Thus, various types of photovoltaic devices can be manufactured and used to convert sunlight into electrical energy. Such a photovoltaic power generation apparatus is disclosed in, for example, Japanese Patent Application Laid-Open No. 10-2008-0088744.

Embodiments provide a photovoltaic device having improved performance.

Photovoltaic device according to one embodiment includes a support substrate; A connection wiring layer disposed on the support substrate; An insulation layer disposed on the connection wiring layer; A back electrode layer disposed on the insulating layer; A light absorbing layer disposed on the rear electrode layer; And a front electrode layer disposed on the light absorbing layer, wherein the back electrode layer is electrically connected to the connection wiring layer.

Photovoltaic device according to one embodiment includes a support substrate; A connection wiring layer disposed on the support substrate; An insulation layer disposed on the connection wiring layer; First solar cells disposed on the insulating layer and connected to each other in series; And second solar cells disposed on the insulating layer and connected in series with each other, wherein the first solar cells and the second solar cells are connected to each other in parallel through the connection wiring layer.

The solar cell apparatus according to the embodiment may connect the solar cells in series and / or in parallel by using a connection wiring layer. In particular, the solar cell apparatus according to the embodiment may connect the solar cells in series and in parallel to reduce the voltage applied to the bus bar.

Accordingly, the solar cell apparatus according to the embodiment can prevent disconnection of the bus bar due to deterioration. Therefore, the solar cell apparatus according to the embodiment may have improved durability.

In addition, the solar cell apparatus according to the embodiment interposes a connection wiring layer between the light absorbing layer and the support substrate. Accordingly, the solar cell apparatus according to the embodiment can variously connect the solar cells without reducing the power generation area.

Therefore, the solar cell apparatus according to the embodiment can have an improved photoelectric conversion efficiency without reducing the power generation area.

1 is a circuit diagram of a photovoltaic device according to an embodiment.
2 is a plan view showing a photovoltaic device according to an embodiment.
FIG. 3 is a cross-sectional view showing a section cut along AA 'in FIG. 2. FIG.
FIG. 4 is a cross-sectional view taken along the line BB ′ of FIG. 2.
FIG. 5 is a cross-sectional view illustrating a cross section taken along CC ′ in FIG. 2.
FIG. 6 is a cross-sectional view taken along the line DD ′ of FIG. 2.
7 to 12 are views illustrating a process of manufacturing the solar cell apparatus according to the embodiment.

In the description of the embodiments, in the case where each substrate, layer, film or electrode is described as being formed "on" or "under" of each substrate, layer, film, , "On" and "under" all include being formed "directly" or "indirectly" through "another element". In addition, the upper or lower reference of each component is described with reference to the drawings. The size of each component in the drawings may be exaggerated for the sake of explanation and does not mean the size actually applied.

1 is a circuit diagram of a photovoltaic device according to an embodiment. 2 is a plan view showing a photovoltaic device according to an embodiment. FIG. 3 is a cross-sectional view taken along the line A-A 'of FIG. 2. 4 is a cross-sectional view illustrating a cross section taken along line B-B 'of FIG. 2. 5 is a cross-sectional view illustrating a cross section taken along line CC ′ in FIG. 2. FIG. 6 is a cross-sectional view illustrating a cross section taken along line D ′ of FIG. 2.

1 and 6, a solar cell apparatus according to an embodiment includes a support substrate 100, a connection wiring layer 110, a back electrode layer 200, a first bus bar 810, and a second bus bar 820. ), A light absorbing layer 300, a buffer layer 400, a high resistance buffer layer 500, and a front electrode layer 600.

The support substrate 100 has a plate shape, and the connection wiring layer 110, the back electrode layer 200, the first bus bar 810, the second bus bar 820, and the light absorbing layer 300. The buffer layer 400, the high resistance buffer layer 500, and the front electrode layer 600 are supported.

The support substrate 100 may be an insulator. The support substrate 100 may be a glass substrate, a plastic substrate, or a metal substrate. In more detail, the support substrate 100 may be a soda lime glass substrate. The supporting substrate 100 may be transparent. The support substrate 100 may be rigid or flexible.

The connection wiring layer 110 is disposed on the support substrate 100. The connection wiring layer 110 may be directly disposed on the upper surface of the support substrate 100. In addition, the connection wiring layer 110 may be disposed between the back electrode layer 200 and the support substrate 100.

The connection wiring layer 110 may almost cover an upper surface of the support substrate 100. The connection wiring layer 110 is a conductive layer. The connection wiring layer 110 includes a conductor. The connection wiring layer 110 may be formed of a material having a low resistance. The connection wiring layer 110 may include molybdenum, aluminum, copper, or an alloy thereof as an example of the material.

The connection wiring layer 110 may have a thickness of about 1 μm to about 10 μm. The connection wiring layer 110 includes a first connection wiring 111 and a second connection wiring 112. The first connection wire 111 and the second connection wire 112 are spaced apart from each other. That is, the connection wiring layer 110 may be separated into the first connection wiring 111 and the second connection wiring 112 by patterning.

The insulating layer 120 is disposed on the connection wiring layer 110. The insulating layer 120 is interposed between the connection wiring layer 110 and the back electrode layer 200. The insulating layer 120 insulates the connection wiring layer 110 and the back electrode layer 200 from each other. In addition, the back electrode layer 200 may be connected to the connection wiring layer 110 through the contact holes 121 and 122 formed in the insulating layer 120.

The insulating layer 120 may include sodium. For example, the insulating layer 120 may be doped with a certain amount of sodium. The insulating layer 120 may be a sodium supply layer supplying a small amount of sodium to the light absorbing layer 300 in the manufacturing process.

The insulating layer 120 includes an insulator. The insulating layer 120 may have a thickness of about 1 μm to about 100 μm. Examples of the material used as the insulating layer 120 may include an inorganic material such as silicon oxide or silicon nitride, or a polymer such as polyimide (PI).

The back electrode layer 200 is disposed on the insulating layer 120. The rear electrode layer 200 is a conductive layer. Examples of the material used for the rear electrode layer 200 include metals such as molybdenum (Mo).

In addition, the rear electrode layer 200 may include two or more layers. At this time, the respective layers may be formed of the same metal or may be formed of different metals.

First through holes TH1 are formed in the back electrode layer 200. The first through holes TH1 are open regions that expose the top surface of the support substrate 100. The first through holes TH1 may have a shape extending in one direction when viewed in a plan view.

The width of the first through-holes TH1 may be about 80 to 200 mu m. The back electrode layer 200 is divided into a plurality of back electrodes 210, 220... And a plurality of connection back electrodes 201, 202 ... by the first through holes TH1. . That is, the back electrodes 210, 220..., The first connection wiring 111, and the second connection wiring 112 are defined by the first through holes TH1. The back electrode layer 200 includes the back electrodes 210, 220..., The first connection wiring 111 and the second connection wiring 112.

The back electrodes 210, 220... Are disposed on the insulating layer 120. The back electrodes 210, 220... Are arranged side by side. The back electrodes 210, 220... Are spaced apart from each other by the first through holes TH1. The back electrodes 210, 220... Are arranged in a stripe shape.

Alternatively, the back electrodes 210, 220... May be arranged in a matrix form. At this time, the first through grooves TH1 may be formed in a lattice form when viewed from a plane.

The back electrode layer 200 may be connected to the connection wiring layer 110. In more detail, the back electrode layer 200 may be directly connected to the connection wiring layer 110 through the contact holes 121 and 122 formed in the insulating layer 120.

One of the back electrodes 210, 220... May be connected to the first connection line 111. In addition, the other of the back electrodes 210, 220... May be connected to the second connection line 112.

The first bus bar 810 is disposed in an outer region of the support substrate 100. The first bus bar 810 is disposed on the connection wiring layer 110. In more detail, the first bus bar 810 may be disposed on the second connection line 112. The first bus bar 810 may directly contact the upper surface of the second connection wire 112.

In addition, the first bus bar 810 may be connected to the back electrode layer 200. In more detail, the back electrode layer 200 is connected to the second connection line 112, and the back electrode layer 200 is connected to the first bus bar 810 through the second connection line 112. Can be. The first bus bar 810 may extend to the rear surface of the support substrate 100 through a hole formed in the support substrate 100.

The second bus bar 820 is disposed at an outer region of the support substrate 100. The second bus bar 820 is disposed on the connection wiring layer 110. In more detail, the second bus bar 820 may be disposed on the first connection line 111. The second bus bar 820 may directly contact an upper surface of the first connection line 111.

In addition, the second bus bar 820 may be connected to the back electrode layer 200. In more detail, the back electrode layer 200 is connected to the first connection line 111, and the back electrode layer 200 is connected to the second bus bar 820 through the first connection line 111. Can be. The second bus bar 820 may extend to the rear surface of the support substrate 100 through a hole formed in the support substrate 100.

The first bus bar 810 and the second bus bar 820 face each other. In addition, the first bus bar 810 and the second bus bar 820 may be symmetrical with each other. The first bus bar 810 and the second bus bar 820 are conductors. The first bus bar 810 and the second bus bar 820 may include a metal having high conductivity such as silver.

The light absorbing layer 300 is disposed on the back electrode layer 200. In addition, the material included in the light absorbing layer 300 is filled in the first through holes TH1.

The light absorbing layer 300 includes a group I-III-VI compound. For example, the light absorbing layer 300 is copper-indium-gallium-selenide-based (Cu (In, Ga) Se 2; CIGS-based) crystal structure, a copper-indium-selenide-based or copper-gallium-selenide Crystal structure.

The energy band gap of the light absorption layer 300 may be about 1 eV to 1.8 eV.

The buffer layer 400 is disposed on the light absorbing layer 300. The buffer layer 400 includes cadmium sulfide (CdS), and an energy band gap of the buffer layer 400 is about 2.2 eV to 2.4 eV.

The high resistance buffer layer 500 is disposed on the buffer layer 400. The high-resistance buffer layer 500 includes zinc oxide (i-ZnO) that is not doped with impurities. The energy bandgap of the high resistance buffer layer 500 is about 3.1 eV to 3.3 eV.

Second through holes (TH2) are formed in the light absorbing layer (300), the buffer layer (400), and the high resistance buffer layer (500). The second through holes (TH2) penetrate the light absorbing layer (300). In addition, the second through holes TH2 are open regions exposing the top surface of the back electrode layer 200.

The second through grooves TH2 are formed adjacent to the first through grooves TH1. That is, a part of the second through grooves TH2 is formed on the side of the first through grooves TH1 when viewed in plan.

The width of the second through holes TH2 may be about 80 μm to about 200 μm.

In addition, the light absorbing layer 300 defines a plurality of light absorbing portions by the second through holes TH2. That is, the light absorbing layer 300 is divided into the light absorbing portions by the second through holes TH2.

In addition, the buffer layer 400 is divided into a plurality of buffers by the second through holes TH2. Similarly, the high resistance buffer layer 500 is divided into a plurality of high resistance buffers by the second through holes TH2.

The front electrode layer 600 is disposed on the high-resistance buffer layer 500. The front electrode layer 600 is transparent and is a conductive layer. In addition, the resistance of the front electrode layer 600 is higher than the resistance of the back electrode layer 200. For example, the resistance of the front electrode layer 600 may be about 10 to 200 times greater than the resistance of the back electrode layer 200.

 The front electrode layer 600 includes an oxide. For example, the front electrode layer 600 may include zinc oxide, indium tin oxide (ITO), or indium zinc oxide (IZO).

In addition, the oxide may include conductive impurities such as aluminum (Al), alumina (Al 2 O 3 ), magnesium (Mg), or gallium (Ga). In more detail, the front electrode layer 600 may include aluminum doped zinc oxide (AZO) or gallium doped zinc oxide (GZO). The front electrode layer 600 may have a thickness of about 800 nm to about 1200 nm.

Third through holes TH3 are formed in the light absorbing layer 300, the buffer layer 400, the high resistance buffer layer 500, and the front electrode layer 600. The third through holes TH3 are open regions exposing the top surface of the back electrode layer 200. For example, the width of the third through holes TH3 may be about 80 μm to about 200 μm.

The third through grooves TH3 are formed at positions adjacent to the second through grooves TH2. More specifically, the third through-holes TH3 are disposed beside the second through-holes TH2. That is, when viewed in plan, the third through grooves TH3 are arranged next to the second through grooves TH2.

The front electrode layer 600 is divided into a plurality of front electrodes 610, 620... By the third through holes TH3. That is, the front electrodes 610, 620... Are defined by the third through holes TH3.

The front electrodes 610, 620... Have a shape corresponding to the rear electrodes 210, 220. That is, the front electrodes 610, 620... Are arranged in a stripe shape. Alternatively, the front electrodes 610, 620... May be arranged in a matrix form.

The front electrode layer 600 includes a plurality of connection parts 700 formed by filling a transparent conductive material in the second through holes TH2.

In addition, a plurality of solar cells C11... C2n are defined by the third through holes TH3. In more detail, the solar cells C11... C2n are distinguished by the second through holes TH2 and the third through holes TH3. That is, the solar cell apparatus according to the embodiment includes the solar cells C11... C2n disposed on the insulating layer 120.

As shown in FIG. 1, the solar cells C11... C2n are connected in series and / or in parallel with each other. The solar cells C11... C2n include first solar cells C11... C1n and second solar cells C21 .. C2n.

The first solar cells C11... C1n are connected in series with each other. The second solar cells C21... C2n are connected in series with each other. The first solar cells C11... C1n are connected in parallel with the second solar cells C21 .. C2n.

The first solar cells C11... C1n may be disposed in an area different from the second solar cells C21 .. C2n. For example, the support substrate 100 may be divided into two parts based on a separation line extending in the same direction as the bus bars 810 and 820. In this case, the first solar cells C11... C1n may be disposed in one of the two divided regions, and the second solar cells C21... C2n may be disposed in the other one of the two divided regions. Can be. In addition, the first solar cells C11... C1n may be arranged in parallel with each other. In addition, the second solar cells C21... C2n may be arranged in parallel with each other.

The first solar cells C11... C1n and the second solar cells C21... C2n may be separated from each other by a fourth through hole TH4. The fourth through hole TH4 penetrates the back electrode layer 200, the light absorbing layer 300, the buffer layer 400, and the high resistance buffer layer 500. The fourth through hole TH4 may be formed to correspond to a central portion of the support substrate 100.

In addition, the first solar cells C11... C1n are disposed in an area where the second connection wiring 112 is disposed. That is, the first solar cells C11... C1n are disposed in an area corresponding to the second connection line 112. The first solar cells C11... C1n may face the second connection line 112 with the insulating layer 120 interposed therebetween.

In addition, the second solar cells C21... C2n are disposed in a region where the first connection wiring 111 is disposed. That is, the second solar cells C21... C2n are disposed in an area corresponding to the first connection wiring 111. The second solar cells C21... C2n may face the first connection line 111 with the insulating layer 120 interposed therebetween.

The first bus bar 810 is connected to the first solar cells C11... C1n. In addition, the first bus bar 810 is connected to the second solar cells C11... C2n through the second connection line 112.

The second bus bar 820 is connected to the second solar cells C21... C2n. In addition, the second bus unit is connected to the first solar cells C11... C1n through the first connection wiring 111.

The connection parts 700 are disposed inside the second through holes TH2. The connection parts 700 extend downward from the front electrode layer 600 and are connected to the back electrode layer 200.

Therefore, the connection parts 700 connect solar cells C11... C2n adjacent to each other. In more detail, the connection parts 700 connect the front electrode and the rear electrode included in the solar cells C11... C2n adjacent to each other.

2 and 3, of the first solar cells C11... C1n, the solar cell closest to the fourth through hole TH4 (hereinafter, referred to as a first central solar cell C1n). ) May be connected to the first connection line 111 through the connection part 700 and the first connection back electrode 201. In more detail, the front electrode 610 of the first central solar cell C1n is connected to the first connection wiring 111 through the connection part 700 and the first connection back electrode 201.

The first connection back electrode 201 may be directly connected to the first connection wiring 111 through the first contact hole 121 formed in the insulating layer 120. In addition, the connection part may extend from the front electrode 610 of the first central solar cell C1n and may be directly connected to the first connection back electrode 201.

2 and 4, of the second solar cells C21... C2n, the solar cell closest to the fourth through hole TH4 (hereinafter, referred to as a second central solar cell) C21) may be directly connected to the second connection wire 112. In more detail, the back electrode 220 of the second central solar cell C21 may be directly connected to the second connection line 112.

The back electrode 220 of the second central solar cell C21 may be directly connected to the second connection wiring 112 through the second contact hole 122 formed in the insulating layer 120.

In addition, as shown in FIGS. 2 and 5, among the first solar cells C11... C1n, the outermost solar cell (hereinafter, the first outermost solar cell C11) is the above-mentioned. It is connected to the second connection line 112 and the first bus bar 810. In detail, the rear electrode 230 of the first outermost solar cell C11 is connected to the second connection line 112, and the second connection line 112 is connected to the first bus bar 810. Can be connected. The back electrode 230 of the first outermost solar cell C11 may be directly connected to the first bus bar 810.

2 and 6, among the second solar cells C21... C2n, the outermost solar cell (hereinafter, the second outermost solar cell C2n) is the above-mentioned. It is connected to the second connection wire 112 and the second bus bar 820. In detail, the front electrode 640 of the second outermost solar cell C2n is connected to the second bus bar 820 and the first connection wiring through the connection part 700 and the second connection back electrode 202. 111 can be connected.

Accordingly, the first solar cells C11... C1n may be connected to the second solar cells C21 .. C2n in parallel. That is, the first solar cell is connected through the connection part, the first connection back electrode 201, the second connection back electrode 202, the first connection wire 111, and the second connection wire 112. The fields C11... C1n may be connected to the second solar cells C21... C2n in parallel.

As described above, the solar cell apparatus according to the embodiment may connect the solar cells C11... C2n in series and / or in parallel using the connection wiring layer 110. In particular, the solar cell apparatus according to the embodiment is connected to the solar cells (C11 ... C2n) in series and in parallel, the voltage applied to the first bus bar 810 and the second bus bar 820, etc. Can be reduced.

Accordingly, the solar cell apparatus according to the embodiment can prevent the disconnection of the first bus bar and the second bus bar 820 due to deterioration. Therefore, the solar cell apparatus according to the embodiment may have improved durability.

In addition, in the solar cell apparatus according to the embodiment, the connection wiring layer 110 is interposed between the light absorbing layer 300 and the support substrate 100. Accordingly, the solar cell apparatus according to the embodiment may variously connect the solar cells C11... C2n without reducing a power generation area.

Therefore, the solar cell apparatus according to the embodiment can have an improved photoelectric conversion efficiency without reducing the power generation area.

7 to 12 are cross-sectional views illustrating a method of manufacturing the solar cell apparatus according to the embodiment. The description of this manufacturing method refers to the description of the photovoltaic device described above. That is, the description of the photovoltaic device described above may be essentially combined with the description of the manufacturing method.

Referring to FIGS. 7 and 8, a connection wiring layer 110 is formed on the support substrate 100. A conductive layer may be formed on the support substrate 100, and the conductive layer may be patterned to form the connection wiring layer 110. In addition, by the patterning process, the first connection wire 111 and the second connection wire 112 can be separated from each other.

As shown in FIG. 7, the first connection wire 111 and the second connection wire 112 may be engaged in a sawtooth shape. That is, the first connection line 111 includes a plurality of first extensions 113, and the second connection line 112 includes a plurality of second extensions 114.

The first extensions 113 and the second extensions 114 are alternately arranged. In addition, the first extensions 113 and the second extensions 114 extend in opposite directions from the body of the first connection line 111 and the body of the second connection line 112, respectively.

Referring to FIG. 9, an insulating layer 120 is formed on the connection wiring layer 110. A plurality of contact holes 121 and 122 may be formed in the insulating layer 120 to expose the connection wiring layer 110. The insulating layer 120 may be formed by a vacuum deposition process or a coating process.

Referring to FIG. 10, a back electrode layer 200 is formed on the insulating layer 120, and the back electrode layer 200 is patterned to form first through holes TH1. Accordingly, a plurality of back electrodes 210, 220..., First connection wirings 111 and second connection wirings 112 are formed on the support substrate 100. The rear electrode layer 200 is patterned by a laser.

The first through holes TH1 expose the upper surface of the supporting substrate 100 and may have a width of about 80 mu m to about 200 mu m.

Referring to FIG. 11, a light absorbing layer 300, a buffer layer 400, and a high resistance buffer layer 500 are formed on the back electrode layer 200. The light absorbing layer 300, the buffer layer 400, and the high resistance buffer layer 500 are formed by a deposition process using the mask 20. Accordingly, the light absorbing layer 300, the buffer layer 400, and the high resistance buffer layer 500 are formed in the active region AR.

The light absorbing layer 300 may be formed by a sputtering process or an evaporation method in a state in which the mask 20 is mounted on the support substrate 100.

For example, copper, indium, gallium, selenide-based (Cu (In, Ga) Se 2 ; CIGS-based) while evaporating copper, indium, gallium, and selenium simultaneously or separately to form the light absorbing layer 300. A method of forming a light absorbing layer of a metal and a method of forming a metal precursor film by a selenization process are widely used.

When a metal precursor film is formed and then subjected to selenization, a metal precursor film is formed on the rear electrode 200 by a sputtering process using a copper target, an indium target, and a gallium target.

Thereafter, the metal precursor film is formed of a copper-indium-gallium-selenide-based (Cu (In, Ga) Se 2 ; CIGS-based) layer by a selenization process.

Alternatively, the copper target, the indium target, the sputtering process using the gallium target, and the selenization process may be performed simultaneously.

Alternatively, a CIS-based or CIS-based light absorbing layer may be formed by using only a copper target and an indium target, or by a sputtering process and a selenization process using a copper target and a gallium target.

Thereafter, cadmium sulfide is deposited by a sputtering process or a chemical bath depositon (CBD) or the like, and the buffer layer 400 is formed.

Then, zinc oxide is deposited on the buffer layer 400 by a sputtering process or the like, and the high-resistance buffer layer 500 is formed.

The buffer layer 400 and the high resistance buffer layer 500 are deposited to a small thickness. For example, the thickness of the buffer layer 400 and the high resistance buffer layer 500 is about 1 nm to about 80 nm.

Thereafter, a portion of the light absorbing layer 300, the buffer layer 400, and the high resistance buffer layer 500 is removed to form second through holes TH2.

The second through grooves TH2 may be formed by a mechanical device such as a tip or a laser device.

For example, the light absorption layer 300 and the buffer layer 400 can be patterned by a tip having a width of about 40 占 퐉 to about 180 占 퐉. In addition, the second through holes TH2 may be formed by a laser having a wavelength of about 200 to 600 nm.

At this time, the width of the second through grooves TH2 may be about 100 mu m to about 200 mu m. In addition, the second through holes TH2 are formed to expose a portion of the top surface of the back electrode layer 200.

Referring to FIG. 12, a front electrode layer 600 is formed on the light absorbing layer 300 and inside the second through holes TH2. That is, the front electrode layer 600 is formed by depositing a transparent conductive material on the high resistance buffer layer 500 and inside the second through holes TH2.

In this case, the transparent conductive material is filled in the second through holes TH2, and the front electrode layer 600 is in direct contact with the back electrode layer 200.

Thereafter, a portion of the light absorbing layer 300, the buffer layer 400, the high resistance buffer layer 500, and the front electrode layer 600 is removed to form third through holes TH3. Accordingly, the front electrode layer 600 is patterned to define a plurality of front electrodes and a plurality of solar cells C11... C2n. The width of the third through holes TH3 may be about 80 μm to about 200 μm.

Thereafter, the first bus bar 810 and the second bus bar 820 may be formed. The first bus bar 810 and the second bus bar 820 may be formed on the connection wiring layer 110.

The first bus bar 810 and the second bus bar 820 are formed along the periphery of the support substrate 100. Portions of the first bus bar 810 and the second bus bar 820 are formed on the first connection wire 111 and the second connection wire 112, respectively.

In order to form the first bus bar 810 and the second bus bar 820, on the first connection wire 111 and the second connection wire 112, and on the support substrate 100. An electrically conductive paste is printed on. In more detail, the conductive paste is printed up to the through holes 101 formed in the support substrate 100.

Thereafter, the printed conductive paste is heat treated, and the first bus bar 810 and the second bus bar 820 are formed.

Alternatively, the first bus bar 810 and the second bus bar 820 may be formed by a vacuum deposition method. That is, a deposition mask 20 including a transmission part corresponding to the first bus bar 810 and the second bus bar 820 is disposed on the support substrate 100. Thereafter, a conductive material is deposited on the back electrode layer 200 and the support substrate 100 through the deposition mask 20. Accordingly, the first bus bar 810 and the second bus bar 820 may be formed.

As described above, by the manufacturing method of the solar cell apparatus according to the present embodiment, a solar cell apparatus having improved durability can be provided.

In addition, the features, structures, effects and the like described in the embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in the embodiments may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It will be understood that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

Claims (13)

A support substrate;
A connection wiring layer disposed on the support substrate;
An insulation layer disposed on the connection wiring layer;
A back electrode layer disposed on the insulating layer;
A light absorbing layer disposed on the rear electrode layer; And
And a front electrode layer disposed on the light absorbing layer,
The back electrode layer is a photovoltaic device electrically connected with the connection wiring layer. The solar cell apparatus of claim 1, further comprising a bus bar connected to the connection wiring layer and disposed outside the support substrate. The solar cell apparatus of claim 1, wherein the insulation layer comprises sodium. The method of claim 1, wherein the back electrode layer is
A first back electrode disposed on the insulating layer; And
A second back electrode disposed next to the first back electrode,
The connection wiring layer
A first connection wire connected directly to the first back electrode; And
A photovoltaic device comprising a second connection wiring directly connected to the second back electrode. The method of claim 1, wherein the insulating layer comprises a contact hole for exposing the top surface of the connection wiring layer,
And the back electrode layer is directly connected to the connection wiring layer through the contact hole. A support substrate;
A connection wiring layer disposed on the support substrate;
An insulation layer disposed on the connection wiring layer;
First solar cells disposed on the insulating layer and connected to each other in series; And
Second solar cells disposed on the insulating layer and connected in series with each other;
The first solar cells and the second solar cells are connected to each other in parallel through the connection wiring layer. The method of claim 6, wherein the connection layer is
A first connection line disposed corresponding to an area in which the second solar cells are disposed and connected to the first solar cells; And
And a second connection line disposed to correspond to a region in which the first solar cells are disposed and connected to the second solar cells. The method of claim 7, wherein the first solar cells
A back electrode on the insulating layer;
A light absorbing layer on the back electrode; And
A front electrode on the light absorbing layer,
The first connection wiring is
A solar cell apparatus connected to one front electrode of the first solar cells. The method of claim 8, wherein the first solar cells are connected to the first solar cells.
A solar cell apparatus comprising a first bus bar connected to the second connection line. The solar cell apparatus of claim 9, wherein the first bus bar is connected to a front electrode of the other one of the first solar cells. The method of claim 7, wherein the second solar cells
A back electrode on the insulating layer;
A light absorbing layer on the back electrode; And
A front electrode on the light absorbing layer,
The second connection wiring is
Photovoltaic device directly connected to the back electrode of one of the second solar cells. 12. The solar cell of claim 11, connected to the second solar cells,
The solar cell apparatus includes a second bus bar connected to the first connection line. The solar cell apparatus of claim 12, wherein the second bus bar is disposed directly on an upper surface of the first connection line.
KR1020120043857A 2012-04-26 2012-04-26 Photovoltaic apparatus KR101349571B1 (en)

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