KR20130104177A - Paste composition for front electrode of silicon solar cell - Google Patents
Paste composition for front electrode of silicon solar cell Download PDFInfo
- Publication number
- KR20130104177A KR20130104177A KR1020120025453A KR20120025453A KR20130104177A KR 20130104177 A KR20130104177 A KR 20130104177A KR 1020120025453 A KR1020120025453 A KR 1020120025453A KR 20120025453 A KR20120025453 A KR 20120025453A KR 20130104177 A KR20130104177 A KR 20130104177A
- Authority
- KR
- South Korea
- Prior art keywords
- solar cell
- front electrode
- paste composition
- silicon solar
- weight
- Prior art date
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- 239000000203 mixture Substances 0.000 title claims abstract description 50
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 22
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 22
- 239000010703 silicon Substances 0.000 title claims abstract description 22
- 229910052751 metal Inorganic materials 0.000 claims abstract description 32
- 239000002184 metal Substances 0.000 claims abstract description 32
- 239000000843 powder Substances 0.000 claims abstract description 32
- 239000002245 particle Substances 0.000 claims abstract description 23
- 239000002082 metal nanoparticle Substances 0.000 claims abstract description 12
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 11
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 10
- 229910052709 silver Inorganic materials 0.000 claims description 10
- 239000004332 silver Substances 0.000 claims description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 8
- 229910052698 phosphorus Inorganic materials 0.000 claims description 8
- 239000011574 phosphorus Substances 0.000 claims description 8
- 239000000654 additive Substances 0.000 claims description 7
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 claims description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 claims description 4
- -1 B 2 O 3 Inorganic materials 0.000 claims description 4
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 239000010948 rhodium Substances 0.000 claims description 4
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 claims description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Natural products CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000002904 solvent Substances 0.000 claims description 3
- DAFHKNAQFPVRKR-UHFFFAOYSA-N (3-hydroxy-2,2,4-trimethylpentyl) 2-methylpropanoate Chemical compound CC(C)C(O)C(C)(C)COC(=O)C(C)C DAFHKNAQFPVRKR-UHFFFAOYSA-N 0.000 claims description 2
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 claims description 2
- DOVZUKKPYKRVIK-UHFFFAOYSA-N 1-methoxypropan-2-yl propanoate Chemical compound CCC(=O)OC(C)COC DOVZUKKPYKRVIK-UHFFFAOYSA-N 0.000 claims description 2
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 claims description 2
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 claims description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 claims description 2
- 229920000178 Acrylic resin Polymers 0.000 claims description 2
- 239000004925 Acrylic resin Substances 0.000 claims description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 2
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 claims description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 2
- 229910018068 Li 2 O Inorganic materials 0.000 claims description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 2
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 claims description 2
- HPFVBGJFAYZEBE-XNBTXCQYSA-N [(8r,9s,10r,13s,14s)-10,13-dimethyl-3-oxo-1,2,6,7,8,9,11,12,14,15,16,17-dodecahydrocyclopenta[a]phenanthren-17-yl] 3-cyclopentylpropanoate Chemical compound C([C@H]1[C@H]2[C@@H]([C@]3(CCC(=O)C=C3CC2)C)CC[C@@]11C)CC1OC(=O)CCC1CCCC1 HPFVBGJFAYZEBE-XNBTXCQYSA-N 0.000 claims description 2
- 230000000996 additive effect Effects 0.000 claims description 2
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 claims description 2
- 239000003963 antioxidant agent Substances 0.000 claims description 2
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 claims description 2
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 claims description 2
- 239000012461 cellulose resin Substances 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 claims description 2
- 239000002270 dispersing agent Substances 0.000 claims description 2
- 229940116333 ethyl lactate Drugs 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 229910052741 iridium Inorganic materials 0.000 claims description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 2
- YEXPOXQUZXUXJW-UHFFFAOYSA-N lead(II) oxide Inorganic materials [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 claims description 2
- 239000007788 liquid Substances 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- XIKYYQJBTPYKSG-UHFFFAOYSA-N nickel Chemical compound [Ni].[Ni] XIKYYQJBTPYKSG-UHFFFAOYSA-N 0.000 claims description 2
- 229910052762 osmium Inorganic materials 0.000 claims description 2
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 239000000049 pigment Substances 0.000 claims description 2
- 239000004014 plasticizer Substances 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229920000915 polyvinyl chloride Polymers 0.000 claims description 2
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 claims description 2
- 239000011347 resin Substances 0.000 claims description 2
- 229920005989 resin Polymers 0.000 claims description 2
- 229910052703 rhodium Inorganic materials 0.000 claims description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 2
- 239000003381 stabilizer Substances 0.000 claims description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims description 2
- 229940116411 terpineol Drugs 0.000 claims description 2
- 239000013008 thixotropic agent Substances 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 239000000326 ultraviolet stabilizing agent Substances 0.000 claims description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 2
- 239000011521 glass Substances 0.000 abstract description 12
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 230000000052 comparative effect Effects 0.000 description 14
- 238000010304 firing Methods 0.000 description 7
- 239000012071 phase Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000002003 electrode paste Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000011812 mixed powder Substances 0.000 description 3
- 238000010248 power generation Methods 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- NIPNSKYNPDTRPC-UHFFFAOYSA-N N-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 NIPNSKYNPDTRPC-UHFFFAOYSA-N 0.000 description 2
- 229920001249 ethyl cellulose Polymers 0.000 description 2
- 235000019325 ethyl cellulose Nutrition 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 1
- 239000000020 Nitrocellulose Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
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- 229920002678 cellulose Polymers 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
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- 230000003993 interaction Effects 0.000 description 1
- 238000010406 interfacial reaction Methods 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229920001220 nitrocellulos Polymers 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
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- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
- H01B1/08—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
- H01B1/12—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances organic substances
- H01B1/124—Intrinsically conductive polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The present invention relates to a paste composition for forming a silicon solar cell front electrode. According to the present invention, the metal paste composition for the front electrode including the conductive metal powder, the glass frit powder, and the organic vehicle is characterized in that the conductive metal nanoparticle powder and the N-type diffusing agent have an average particle diameter of 500 nm or more and less than 1.0 μm. . The silicon solar cell manufactured by using the paste composition for forming a solar cell front electrode according to the present invention has a high conversion efficiency.
Description
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a paste composition for a silicon solar cell front electrode, and in particular, exhibits a high sintered density and a low sinter shrinkage after firing, thereby providing a low resistance and contact resistance of the electrode, thereby increasing the efficiency of the solar cell. It relates to an electrode paste composition.
In general, a solar cell forms an emitter layer (n + layer) in which phosphorus (P, Phosphorus) is diffused on a p-type Si substrate made of monocrystalline or polycrystalline silicon (Si), and SiN x for reducing surface reflectance on the upper side thereof. Or an antireflection film made of SiO 2 or the like and a surface electrode (light-receiving surface electrode) for extracting current, and a BSF (p + layer) having a high concentration of aluminum (Al) diffused on the other side of the Si substrate is formed. And the electrode is formed on the back surface. That is, it has a junction structure between a p-type semiconductor and an n-type semiconductor, and when light is incident on a solar cell, negatively-charged electrons pop out due to interaction between the light and the material constituting the semiconductor of the solar cell. A positive charge, that is, a hole, is generated at the position where is escaped, and a current flows due to a potential difference therebetween.
In order to improve the power generation efficiency of the solar cell, various factors such as materials and process conditions used for each solar cell element can be controlled. However, in order to increase the power generation characteristics of the solar cell, it is very important to improve the characteristics of the electrode. . For example, the power generation efficiency can be increased by lowering the resistance of the electrode, and in the case of the front electrode, the efficiency can be increased by increasing the light receiving area.
In particular, the front electrode is formed through an interfacial reaction between the metal paste for forming the front electrode and the anti-reflection film, wherein the silver contained in the metal paste becomes liquid at high temperature and recrystallizes into a solid phase, thereby mediating the glass frit. As a result, the film is brought into contact with the emitter layer through a punch through phenomenon penetrating the antireflection film. However, in the conventional surface reaction on the anti-reflection film forming the front electrode, there is a limit to the degree of sintering of silver, thereby improving the performance of the front electrode or reducing its area.
In order to solve the above problems, Korean Patent Laid-Open Publication No. 2005-0087248 eliminates the use of glass frit by using silver powder of 100 nm or less, thereby lowering the contact resistance and firing temperature between the electrode and the substrate and improving the efficiency of the solar cell. It was. However, the method proposed in the above patent does not provide the solar cell efficiency that is satisfactorily improved, and there is a disadvantage that physical defects such as cracks may occur after firing, resulting in a problem that the sintered density is low, which may cause a problem that is vulnerable to long-term reliability. It was. Therefore, it is urgent to develop additional technologies that can further improve the performance of the front electrode.
An object of the present invention is to provide a paste composition for a silicon solar cell front electrode that can increase the efficiency of the solar cell by providing a low resistance and contact resistance of the electrode by showing a high sintered density and low sintering shrinkage after firing during electrode production. .
Another object of the present invention is to provide a paste composition that can increase the conversion efficiency of the solar cell by reducing the area occupied by the front electrode by forming an electrode having a high aspect ratio when manufacturing the front electrode by the screen printing method.
In order to achieve the above object, the present invention is a paste composition for solar cell front electrode comprising a metal powder, a glass frit powder, an organic vehicle and an additive, the conductive metal nanoparticle powder and solution having an average particle diameter of 500 nm or more and less than 1.0 ㎛ Provided is a paste composition for a silicon solar cell front electrode comprising an N-type diffusing agent comprising a phosphorus (P) element in a stable phase.
Specifically, the paste composition for a silicon solar cell front electrode of the present invention, based on the total weight of the composition, (A) 50 to 90% by weight of conductive metal nanoparticle powder having an average particle diameter of 500 nm or more and less than 1.0 μm; (B) 1 to 15% by weight of organic frit; (C) 4 to 35% by weight of the organic vehicle; And (D) 0.5 to 2% by weight of an N-type diffusing agent containing a phosphorus (P) element in a stable phase on a solution.
In addition, the paste composition for a silicon solar cell front electrode of the present invention, based on the total weight of the composition, (A) conductive metal powder, conductive metal nanoparticle powder having an average particle diameter of 500 nm or more and less than 1.0 μm and an average particle diameter of 1.0 μm or more 10 50 to 90% by weight of the mixed powder in which the conductive metal powder having a thickness of less than 1 m is mixed at a weight ratio of 1: 0.1 to 10; (B) 1 to 15% by weight of organic frit powder; (C) 4 to 35% by weight of the organic vehicle; And (D) 0.5 to 2% by weight of an N-type diffusing agent containing a phosphorus (P) element in a stable phase in a solution phase.
Hereinafter, each component of the paste composition of this invention is demonstrated.
(A) conductive metal powder
The paste composition of the present invention is characterized in that it comprises conductive metal nanoparticle powders having an average particle diameter in the range of 500 nm or more and less than 1.0 μm, wherein both the use of the conductive metal nanoparticle powder and the mixed use with the fine conductive metal powder are used. Include.
The present invention may use 50 to 90% by weight of the conductive metal nanoparticle powder having an average particle diameter of 500 nm or more and less than 1.0 μm based on the total weight of the composition. If the average particle diameter of the conductive metal nanoparticles of the present invention is larger than the above range, the high sintered density may not be obtained after firing, and if the average particle diameter is smaller than the above range, there is a problem in dispersibility in the organic vehicle, resulting in uniform printing quality. Hard to get
The present invention also provides a mixed powder 50 in which a conductive metal nanoparticle powder having an average particle diameter of 500 nm or more and less than 1.0 μm and a conductive metal powder having an average particle diameter of 1.0 μm or more and less than 10 μm are mixed in a weight ratio of 1: 0.1 to 10. -90 weight% can be used. When the conductive metal powder is mixed in the weight ratio, the efficiency of the solar cell is further improved. When using silver powder as a conductive metal powder whose average particle diameter is 1.0 micrometer or more and less than 10 micrometers, it is preferable that it is one or more chosen from a spherical form and a flake form.
The conductive metal is silver (Ag), gold (Au), palladium (Pd), platinum (Pt), copper (Cu), chromium (Cr), cobalt (Co), aluminum (Al), tin (Sn), lead ( At least one selected from the group consisting of Pb), zinc (Zn), iron (Fe), iridium (Ir), osmium (Os), rhodium (Rh), tungsten (W), molybdenum (Mo), and nickel (Nickel) Although may be used, it is preferable to use silver (Ag).
The conductive metal powder of the present invention is used 50 to 90% by weight based on the total weight of the composition. If it is less than 50% by weight, there is a problem in printability due to phase separation or low viscosity, and insufficient metal components cannot obtain sufficient electrical conductivity. If the conductive metal powder component is more than 90% by weight, there is a problem in that the printability is difficult due to the high viscosity.
(B) glass Frit
The paste composition of the present invention comprises a glass frit commonly used in solar cell electrode paste as an inorganic binder. Glass frit is to use at least one selected from Bi 2 O 3 , B 2 O 3 , SiO 2 , Al 2 O 3 , CaO, BaO, ZnO, Na 2 O, Li 2 O, PbO, TiO 2 and ZrO desirable. The particle size of the glass frit is preferably about 1.0 μm to 10 μm.
The glass frit of the present invention is preferably used in the range of 1 to 15% by weight based on the total weight of the composition. Within the above range, there is an advantage of facilitating adhesion and sinterability of the solar cell electrode paste.
(C) organic Vehicle
The paste composition according to the present invention comprises an organic vehicle in the mixed powder for mixing the powder component and preparing it in a paste state suitable for the screen printing process for forming the electrode. The organic vehicle may be an organic vehicle that is commonly used in solar cell electrode pastes, and may be, for example, a mixture of a polymer and a solvent. Preferably, the organic vehicle is butyl carbitol acetate, butyl carbitol, butyl cellulsolve, butyl cellulsolve acetate, propylene glycol monomethyl ether, dipropylene glycol monomethyl ether, propylene glycol monomethyl ether propionate, ethyl ether pro Ethylcellulose, methyl in one or more solvents selected from cypionate, terpineol, propylene glycol monomethyl ether acetate, dimethylaminoformaldehyde, methylethylketone, gamma butyrolactone, ethyl lactate and texanol At least one resin selected from cellulose resins such as cellulose and nitrocellulose, acrylic resins such as polymethacrylate of rosin or alcohol, acrylic esters, and polyvinyl resins such as polyvinyl alcohol and polyvinyl butyral It is.
The organic vehicle of the present invention is preferably contained within the range of 4% to 35% by weight relative to the total composition. If it is less than 4% by weight, not only the metal powder can be dispersed but also difficult to print, there is a concern that a suitable printing pattern cannot be obtained. In addition, when the content is more than 35% by weight, the content of the metal powder is too small, the electrical conductivity is lowered, there is a problem that the conversion efficiency of the solar cell is lowered due to the increase in resistance by the residual carbon after firing.
(D) N type Diffuser
According to the present invention, the efficiency of the final solar cell can be improved by adding an N-type diffusion agent. The N-type diffusing agent of the present invention is not particularly limited as long as it contains a phosphorus (P) element which is in a stable state in a solution phase, but it is preferable to use P 2 O 5 which exists in a stable state in a solution phase. In addition, the N-type diffusing agent of the present invention is used at 0.5 to 2% by weight based on the weight of the composition. Within this range, there is an advantageous effect on the ohmic junction between the solar cell front electrode and the silicon wafer.
(E) Other additives
The metal paste composition of the present invention may further include additional additives within the scope of the present invention. Examples of other additives that may be added include plasticizers, dispersants, thixotropic agents, viscosity stabilizers, antifoams, pigments, ultraviolet stabilizers, antioxidants, and the like. The amount of additives can be properly determined by one skilled in the art depending on the properties of the metal paste ultimately required.
The paste composition for a solar cell front electrode of the present invention may be obtained by mixing the above-mentioned essential components and optional components in a predetermined ratio, and uniformly dispersing them with a kneader such as a blender or a triaxial roll. Preferably, the paste composition for solar cell front electrode of the present invention has a viscosity of 100 to 150 Pa · S when measured at 5 rpm and 25 ° C. with a multipurpose cup using a Brookfield HBT viscometer and # 51 spindle. .
In the present invention, since the electrode is formed using a paste containing conductive metal nanoparticles having an average particle diameter of 500 nm or more and less than 1.0 μm and an N-type diffusing agent, the electrical conductivity is increased by the sintered density of the high electrode after firing, It is possible to reduce the line width of the front electrode with a high aspect ratio, thus reducing the incident light loss of the solar cell. The silicon solar cell manufactured using the paste composition for forming a front electrode according to the present invention has a high conversion efficiency.
1 is a SEM photograph of a front electrode made of a metal paste prepared according to Example 1 of the present invention.
Figure 2 is a SEM photograph of the front electrode made of a metal paste prepared according to Example 2 of the present invention.
3 is a SEM photograph of a front electrode made of a metal paste prepared according to Example 3 of the present invention.
Figure 4 is a SEM photograph of the front electrode made of a metal paste prepared according to Comparative Example 1 of the present invention.
Hereinafter, the present invention will be described in detail with reference to examples and comparative examples. However, the examples are for illustrative purposes only and are not intended to limit the scope of the present invention.
Example 1-3 and Comparative example 1-2
Example 1-3
According to the composition shown in Table 1 below, the silver powder, the glass frit, the organic vehicle, and the additives were mixed and uniformly stirred, and then mixed and dispersed in a three-stage roll mill to prepare a metal paste composition.
Comparative example One
Metal paste compositions were prepared in the same manner as in Examples 1 to 3 except that only Silver powder 2 was used instead of Silver powder 1 in Examples 1-3.
Comparative example 2
Silver paste compositions were prepared in the same manner as in Examples 1-3, except that the N-type diffusing agent was not used in Examples 1-3.
(Unit: wt%)
1: Silver particle with an average particle diameter of 800 nm
2: silver particle with an average particle diameter of 3.0 μm
3: glass frit with an average particle diameter of 1.0 μm (VIOX, V2172)
4: Ethyl cellulose: butyl carbitol = 1: 9 organic vehicle mixed in weight ratio
5: N-type diffusing agent: N-diffusol (Transene Company, US)
Test Example
The paste compositions of Examples 1 to 3 and Comparative Examples 1 and 2 were applied to the silicon wafer by screen printing so as to have a thickness of 40 μm and dried. The P-type silicon semiconductor substrate coated with the paste composition was dried at 200 ° C., and then fired at about 760 ° C. to 840 ° C. for about 5 seconds to form an electrode, thereby manufacturing a solar cell. Using the solar cell efficiency measuring equipment (HS-C1, HSCV Co., Ltd.) to measure the manufactured solar cell VOC (V), Isc (A), Fill Factor (%), efficiency (Eff) (%) 2 is shown.
As shown in Table 2, in Examples 1 to 3 using a paste composition containing more than 500 nm and less than 1.0 μm, the paste does not contain more than 500 nm and less than 1.0 μm of conductive metal nanoparticles. It was confirmed that the efficiency of the solar cell is superior to Comparative Example 1 using the composition, the best conversion for Example 2 in which nanoparticles of 500 nm or more and less than 1.0 μm mixed with silver particles in the range of 1.0 μm or more and less than 10 μm It was confirmed that the efficiency was shown. In particular, from the results of Example 2 and Comparative Example 2, it was confirmed that the composition of the present invention can improve the conversion efficiency of the solar cell more than when the N-type diffuser is not applied.
In addition, cross-sectional SEM photographs of the solar cell front electrodes according to Examples 1 to 3 and Comparative Example 1 are shown in FIGS. 1 to 4, respectively. 1 to 4, it was confirmed that the solar cell front electrode manufactured by the paste composition of the present invention had a high aspect ratio compared to Comparative Example 1 in which nanoparticles of 500 nm or more and less than 1.0 μm were not used.
Claims (8)
(A) Conductive metal powder, 50-90 wt% of conductive metal nanoparticle powder having an average particle diameter of 500 nm or more and less than 1.0 μm;
(B) 1 to 15% by weight of organic frit;
(C) 4 to 35% by weight of the organic vehicle; And
(D) A paste composition for a silicon solar cell front electrode comprising 0.5 to 2% by weight of an N-type diffuser containing a phosphorus (P) element in a stable phase in solution.
(A) A mixed metal powder, in which a conductive metal powder having a mean particle size of 500 nm or more and less than 1.0 μm and a conductive metal powder having an average particle size of 1.0 μm or more and less than 10 μm are mixed in a weight ratio of 1: 0.1 to 10. -90 wt%;
(B) 1 to 15% by weight of organic frit powder;
(C) 4 to 35% by weight of the organic vehicle; And
(D) The paste composition for silicon solar cell front electrodes containing 0.5-2 weight% of N-type diffusers containing the phosphorus (P) element in the stable phase of a solution.
The (A) conductive metal is silver (Ag), gold (Au), palladium (Pd), platinum (Pt), copper (Cu), chromium (Cr), cobalt (Co), aluminum (Al), tin (Sn) ), Lead (Pb), zinc (Zn), iron (Fe), iridium (Ir), osmium (Os), rhodium (Rh), tungsten (W), molybdenum (Mo), nickel (Nickel) Paste composition for a silicon solar cell front electrode, characterized in that at least one selected.
Paste composition for a silicon solar cell front electrode, characterized in that (A) the conductive metal is silver (Ag).
The organic frit powder (B) is one selected from Bi 2 O 3 , B 2 O 3 , SiO 2 , Al 2 O 3 , CaO, BaO, ZnO, Na 2 O, Li 2 O, PbO, TiO 2 and ZrO. Paste composition for a silicon solar cell front electrode characterized by above.
The organic vehicle (C) is butyl carbitol acetate, butyl carbitol, butyl cellulsolve, butyl cellulsolve acetate, propylene glycol monomethyl ether, dipropylene glycol monomethyl ether, propylene glycol monomethyl ether propionate, ethyl ether pro Cellulose resin in at least one solvent selected from cypionate, terpineol, propylene glycol monomethyl ether acetate, dimethylaminoformaldehyde, methylethyl ketone, gamma butyrolactone, ethyl lactate and texanol, Paste composition for a silicon solar cell front electrode, characterized in that at least one resin selected from acrylic resin and polyvinyl resin is added.
The paste composition for silicon solar cell front electrode, wherein the (D) N-type diffusion agent is liquid P 2 O 5 .
Paste composition for a silicon solar cell front electrode, characterized in that it further comprises at least one additive selected from the group consisting of plasticizers, dispersants, thixotropic agents, viscosity stabilizers, antifoams, pigments, ultraviolet stabilizers and antioxidants.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108986984A (en) * | 2018-06-07 | 2018-12-11 | 太仓萃励新能源科技有限公司 | A kind of preparation method of N-type electrocondution slurry |
| CN110114175A (en) * | 2016-10-13 | 2019-08-09 | LS-Nikko铜制炼株式会社 | High temperature sintering type silver powder and its manufacturing method |
| KR20200005276A (en) * | 2018-07-06 | 2020-01-15 | 삼성에스디아이 주식회사 | Composition for forming solar cell electrode and electrode prepared using the same |
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| WO2006003755A1 (en) * | 2004-07-06 | 2006-01-12 | Murata Manufacturing.Co., Ltd. | Electroconductive paste and ceramic electronic parts using the same |
| KR20080099406A (en) * | 2007-05-09 | 2008-11-13 | 주식회사 동진쎄미켐 | A paste for producing electrode of solar cell |
| KR20110087235A (en) * | 2010-01-25 | 2011-08-02 | 히다찌 가세이 고오교 가부시끼가이샤 | Composition for forming n-type diffusion layer, method for forming n-type diffusion layer, and method for producing photovoltaic cell |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006003755A1 (en) * | 2004-07-06 | 2006-01-12 | Murata Manufacturing.Co., Ltd. | Electroconductive paste and ceramic electronic parts using the same |
| KR20080099406A (en) * | 2007-05-09 | 2008-11-13 | 주식회사 동진쎄미켐 | A paste for producing electrode of solar cell |
| KR20110087235A (en) * | 2010-01-25 | 2011-08-02 | 히다찌 가세이 고오교 가부시끼가이샤 | Composition for forming n-type diffusion layer, method for forming n-type diffusion layer, and method for producing photovoltaic cell |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110114175A (en) * | 2016-10-13 | 2019-08-09 | LS-Nikko铜制炼株式会社 | High temperature sintering type silver powder and its manufacturing method |
| CN110114175B (en) * | 2016-10-13 | 2022-06-14 | LS-Nikko铜制炼株式会社 | High-temperature sintered silver powder and method for producing same |
| CN108986984A (en) * | 2018-06-07 | 2018-12-11 | 太仓萃励新能源科技有限公司 | A kind of preparation method of N-type electrocondution slurry |
| KR20200005276A (en) * | 2018-07-06 | 2020-01-15 | 삼성에스디아이 주식회사 | Composition for forming solar cell electrode and electrode prepared using the same |
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| KR101868638B1 (en) | 2018-06-19 |
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