KR20130084917A - Manufacturing method for flexible optic device for photo dynamic treatment and flexible optic device manufactured by the same - Google Patents

Abstract

PURPOSE: A flexible optical device is provided to be manufactured according to the flexible fabrication method of optical chip for the photo dynamic therapy is effectively inserted into the inside human body or the outside and it is easily used for the disease treating including the cancer etc. CONSTITUTION: An optical device for the photo dynamic therapy comprises flexible printed circuit board and the LED element formed on the flexible printed circuit board. After the flexible printed circuit board and LED element are inserted within the human body light is irradiated in the human organ. The light-emitting layer of the LED element is changed according to the photosensitizer kind for the photo dynamic therapy. The LED element is the GaN LED element or the GaAs LED element. A fabrication method of optical chip for the photo dynamic therapy comprises the steps of: a step of separating to the sacrificial substrate the LED element manufactured on the sacrificial substrate; a step transcribing the above-mentioned separated LED element to the plastic substrate.

Description

Manufacturing method for flexible optic device for photo dynamic treatment and flexible optic device manufactured by the same}

The present invention relates to a method of manufacturing a flexible optical element for photodynamic therapy and a flexible optical element manufactured thereby. More particularly, the present invention relates to a flexible optical element which is effectively inserted into the inside or the outside of a human body to be used for treatment of diseases such as cancer, GaAs LED, and a flexible optical device manufactured by the method.

Commonly known cancer therapies include surgical resection, radiation therapy, and chemotherapy using chemotherapeutic agents. Recently, new treatments using photochemical reactions by laser and photosensitizer are attracting attention. This treatment, called photodynamic therapy (PDT), is a method of treating tumors by injecting a photosensitizer into the body and irradiating laser light with a particular wavelength to the disease site. The photosensitizer is activated by a laser after selective accumulation in the tumor tissue, and it combines with oxygen to generate singly oxygenated (singlet oxygen) ( ¹ O2), which is chemically highly reactive, to necrotize tumor cells. The cancer cell death process may be caused by a mechanism that directly damages the cancerous cells of the active oxygen of the toxin, and may damage the micro-blood vessels around the tumor to prevent the supply of nutrients to the cancer tissue, . In addition, the secondary response to oxidative stress can activate the immune system to induce apoptosis or an immunological response to attack cancer tissues. The greatest advantage of PDT is that it is possible to selectively treat only the disease site, so that the side effect is small and the procedure is simple, so it does not require patient's pain and can return home on the day because it does not require hospitalization. In addition, it is possible to repeat the procedure several times to increase the effect, there is an advantage that can be combined with other treatments, such as surgical surgery, radiation therapy, and chemotherapy.

However, since such a PDT technique requires light irradiation according to a photosensitizing agent, it is necessary to develop an effective light irradiation means for photodynamic therapy in accordance with various types of human characteristics.

Accordingly, it is an object of the present invention to provide a method for manufacturing a flexible optical device for photodynamic therapy, which can be used in close contact with the inside of a human body in a flexible form, and an optical device for photodynamic therapy.

In order to solve the above problems, the present invention is a photodynamic therapy optical device, the optical device is a flexible substrate; And an LED element formed on the flexible substrate, wherein the flexible substrate and the LED element are inserted into a human body, and then light is irradiated to a human body.

In one embodiment of the present invention, the light emitting layer of the LED device depends on the type of photosensitizer for the photodynamic therapy.

In one embodiment of the present invention, the LED element is a GaN LED element or a GaAs LED element.

The present invention also relates to a method of manufacturing an optical element for photodynamic therapy, the method comprising: separating an LED element fabricated on a sacrificial substrate into the sacrificial substrate; And transferring the separated LED elements to a plastic substrate. The present invention also provides a method of manufacturing an optical element for photodynamic therapy.

In one embodiment of the present invention, the LED element is a GaN element or a GaAs element.

In one embodiment of the present invention, the LED element is a structure in which a plurality of unit elements form an array.

In one embodiment of the present invention, the step of separating the LED device from the sacrificial substrate is a laser-beam lift-off method of irradiating a laser beam on the back of the sacrificial substrate.

In one embodiment of the present invention, separating the LED element from the sacrificial substrate is a method of irregularly etching the sacrificial substrate.

The present invention also relates to a method of manufacturing an optical element for photodynamic therapy, the method comprising: forming an array of LED elements comprising a plurality of LED unit elements spaced from one another on a sacrificial substrate; Separating the LED element array from the sacrificial substrate and transferring the array onto a flexible plastic substrate; Forming contact lines connected to the transferred LED unit elements; And laminating a passivation layer on the contact line, and exposing a part of the contact line to the outside.

In one embodiment of the present invention, the LED unit element is a GaN element of an n-GaN layer, an active layer of a multi-quantum well (MQW) and a p-GaN layer structure.

In one embodiment of the present invention, the LED unit device is a GaAs device of an n-GaAs layer / an n-AlGaInP layer / an AlGaInP layer / a p-AlGaInP layer structure.

The present invention also provides an optical device for photodynamic therapy produced by the above-described method.

The present invention also provides a light irradiation method using an optical device for photodynamic therapy in which light emitted from an optical device for photodynamic therapy according to the present invention inserted in a human body reacts with a photosensitizing agent administered in the human body.

The flexible optical device according to the present invention can directly irradiate a light source to a tissue to be photodynamic treatment target by using a biocompatible flexible LED device. In particular, the flexible optical device according to the present invention can be effectively adhered to the non-flat tissue, thereby reducing the physical damage to the surrounding tissue. In addition, it can be used in a small space according to a thin substrate thickness, and it is possible to prevent a living body from being damaged by a heavy weight. Furthermore, effective photodynamic therapy is possible with low power.

FIGS. 1 and 2 are photographs for explaining the concept of an optical device for photodynamic therapy according to the present invention, that is, an LED device for photodynamic therapy for generating a therapeutic effect by irradiating light to a specific treatment tissue from inside or outside the human body.
3 to 23 are step diagrams of a method of manufacturing a GaN LED device for photodynamic therapy according to an embodiment of the present invention.
24 is a view for explaining the structure of a GaAs LED element for photodynamic therapy according to another embodiment of the present invention.
25 and 26 are views for explaining a method of manufacturing a GaAs LED element for photodynamic therapy.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail with reference to preferred embodiments and drawings. However, the following embodiments are provided as examples for allowing a person skilled in the art to sufficiently convey the idea of the present invention. Therefore, the present invention is not limited to the embodiments described below, but may be embodied in other forms. In the drawings, the width, length, thickness, etc. of the components may be exaggerated for convenience. Like numbers refer to like elements throughout.

Further, the drawings attached hereto are all interpreted in the form of a cross-sectional view cut along the entire plan view and the partial cross-sectional view (A-A ').

As used herein, a plastic substrate is understood to include all of the substrates having flexibility, i. E., Flexible characteristics, and more specifically, a flexible polymer substrate.

In order to solve the above-described problems of the prior art optical irradiation method and device for photodynamic therapy, the present invention relates to a photodynamic therapy optical fiber which is in close contact with a human body having a curved surface, . In order to achieve the above object, the present invention provides an LED device that is spherical in a flexible substrate as the photodiode for photodynamic therapy. In particular, when GaAs is a light emitting layer, the flexible GaAs LED device according to the present invention is formed by red light May be used in combination with a specific photosensitizing agent that reacts with the red light to generate photodynamic therapy effects.

Alternatively, when GaN is a light emitting layer, blue light is emitted from the flexible GaN element. In this case, another specific photosensitizer reacting with the blue light can be injected into the human tissue irradiated with the blue light.

1 and 2 are photographs illustrating the concept of an optical device for photodynamic therapy according to the present invention, that is, an LED device that irradiates light to a specific tissue in a human body to generate a therapeutic effect in the tissue.

Referring to FIGS. 1 and 2, the photodynamic therapy device according to the present invention may be used for various sites 602 in the human body 601. For example, the flexible optical device according to the present invention may be used for the tissue 602a in which the cancer cells are generated or the retina 602b of the eye. In particular, in the case of the present invention, the array type flexible optical element LED elements 700 and 800 including unit LED elements 700a and 800a capable of on / off operation are used as optical elements for photodynamic therapy, The number of the unit LED elements in the ON state can be controlled. In addition, the present invention provides a flexible optical device that generates blue or red light depending on the type of the light emitting layer, and GaN (700, 700a) in the case of blue and GaAs (800, 800a) in the case of red become the light emitting layer. In addition, the light emitted from the optical device varies depending on the type of the light emitting layer. Thus, in one embodiment of the present invention, the photosensitizing agent administered to the human body varies depending on the type of light.

Hereinafter, a method of manufacturing an optical device for photodynamic therapy according to the present invention will be described with reference to the drawings.

3 to 23 are step diagrams of a method of manufacturing a GaN LED device for photodynamic therapy according to an embodiment of the present invention.

First, in Fig. 3, the sacrificial substrate is a sapphire substrate 100.

4, a buffer layer 201, an n-GaN layer 202, an active multi-quantum well (MQW) 203, and a p-GaN layer 202 are sequentially formed on the substrate 100 (204). Here, the n-GaN layer and the p-GaN layer mean a gallium nitride layer doped with n-type impurities or p-type impurities.

5, a photoresist layer 301 is coated on the p-GaN layer 204, a photoresist process is performed using the first patterned mask 302, and a p- And the multi-quantum well layer are etched to expose the n-GaN layer 202 under the element layer to the outside (see FIGS. 6 and 7). In one embodiment of the present invention, the etching process is a reactive ion etching process, but the scope of the present invention is not limited thereto. The n-GaN layer regions 205 exposed to the outside according to the etching process are spaced apart from each other and have a rectangular structure having a predetermined width and length, but the scope of the present invention is not limited to this.

Referring to FIG. 8, the first and second contact metals 206 are stacked on the exposed n-GaN layer region 205 and the p-GaN layer 203 adjacent to the n-GaN layer region 205, respectively. In one embodiment of the present invention, the contact metal 206 is Au / Cr metal and forms an ohmic contact with the underlying contact layer by a heat treatment at 600 ° C for 1 minute.

Referring to FIG. 9, a first metal layer 207 is stacked over the entire device layer, whereby the exposed n-GaN region and the p-GaN layer are covered with the supporting metal layer 207. In the present invention, the supporting metal layer 207 provides a uniform contact area with the transfer substrate for transferring the GaN device.

Referring to FIGS. 10 to 12, after the second mask 304 is stacked on the unit device region including the first and second contact metals, a photoresist process and an etching process are performed. As a result, all the device layers in the remaining regions except the device region where the second mask 304 is formed are removed. Herein, the device region refers to a region including an n-GaN layer region 205 and a second contact metal on an adjacent p-GaN layer. 14, a so-called GaN LED array is formed in which a plurality of unit LED elements are spaced apart from each other on a rigid sacrificial substrate 100, and the GaN LED elements are formed independently of each other And the contact lines are formed so that they can be turned on and off. According to the on-off method, the intensity of light which varies depending on the photosensitizer can be controlled.

13 to 15, a laser beam 400 for a reflow-off process is irradiated to the rear surface of the sacrificial substrate 100 at a position corresponding to the device region, and then a transfer substrate 210 such as a PDMS After being in contact with the unit device, the device is separated from the sacrificial substrate 100.

16 shows a plastic substrate 500 having flexibility.

17 and 18, an adhesive layer 501 is applied onto the plastic substrate 500, and then an element separated from the sacrificial substrate 100 is brought into contact with the adhesive layer 501, Transfer the character.

19, the support metal layer 207 is removed, thereby exposing the n-GaN layer and the p-GaN layer of the unit device, and at the same time, the contact metal 206 on the n-GaN layer is also exposed. The removal may be a wet process through an etchant, but the scope of the present invention is not limited thereto.

Referring to FIG. 20, a first passivation layer 310 for forming an electrical passivation is stacked. In the present invention, the first passivation layer 310 may be a transparent resin layer, and SU8, PI, PU, or the like may be used as a constituent material of the passivation layer 310. [ Thereafter, a third mask 305 is used to form a contact line between the n-GaN layer and the contact metal on the p-Gan layer, and as shown in Fig. 21, a contact on the n-GaN layer and the p- The metal 206 is opened by the etching process and exposed to the outside.

Referring to FIG. 22, one metal line 502 is stacked on an opening where the contact metal 206 on the n-GaN layer and the layer p-GaN layer is exposed, and then patterned. The first metal lines are stacked in such a manner as to fill all open portions in FIG. 21, and then the contact metals of the plurality of unit optical elements are connected by the first metal line 502. 22, three unit elements constituting one kind are electrically connected by a first metal line 502, and a pad larger than the width of the line is formed at the end of the first metal line 502 . Referring to FIG. 23, a second passivation layer 320 is laminated on the device to complete a final photodynamic therapy GaN LED device.

Another embodiment of the present invention uses GaAs capable of emitting red light instead of GaN as a light emitting layer, and FIG. 24 is a diagram illustrating a GaAs structure according to another embodiment of the present invention.

24, a red LED stack stacked on the sacrificial substrate 103 has a laminated structure of an n-GaAs layer 731 / n-AlGaInP (732) / AlGaInP (733) / p-AlGaInP layer 734 . Here, n-GaAs serves as a buffer layer such as AlN, and n-AlGaInP corresponds to n-GaN and p-AlGaInP corresponds to p-GaN. In addition, in the case of the GaAs LED according to the present embodiment, the element is separated from the sacrificial substrate by using a solution etching process, not a lift-off process using a laser beam.

25 and 26 are views for explaining a method for manufacturing a red LED element.

Referring to FIG. 25, a support metal layer 207 is provided on the LED stack to provide a sufficient contact area with the transfer layer, and a thin layer of the metal layer outside the device region of the support metal layer 207 on the device region. It is connected through the connection part. The support metal layer 207 according to the present invention forms a ribbon shape through the bridge structure. Then, a transfer substrate 210 such as PDMS or the like is laminated on the supporting metal layer 207, and an anisotropic etching process for the substrate 103 proceeds. As a result, the GaAs LED element adhered to the transfer substrate 210 is separated from the substrate (see FIG. 26).

Thereafter, a flexible LED element is manufactured through the same process as shown in FIGS.

The flexible optical device manufactured through the above process can directly irradiate a light source to a tissue to be photodynamic therapy using a biocompatible flexible LED device. In particular, the flexible optical device according to the present invention can be effectively adhered to the non-flat tissue, thereby reducing the physical damage to the surrounding tissue. In addition, it can be used in a small space according to a thin substrate thickness, and it is possible to prevent a living body from being damaged by a heavy weight. Furthermore, effective photodynamic therapy with low power is possible, and light type and light intensity can be precisely controlled, which is very effective in photodynamic therapy.

While the present invention has been described with reference to exemplary embodiments thereof, it will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit and scope of the invention as defined in the appended claims. .

Claims (13)

An optical device for photodynamic therapy, the optical device
A flexible substrate; And
And a LED device formed on the flexible substrate, wherein the flexible substrate and the LED device are inserted into the human body and then irradiate light to human organs. The method of claim 1,
The light emitting layer of the LED device is a photodynamic therapy optical device, characterized in that depends on the type of photosensitive agent for the photodynamic therapy. The method of claim 1,
The LED device is a photodynamic therapy optical device, characterized in that the GaN LED device or GaAs LED device. A method of manufacturing an optical element for photodynamic therapy,
Separating the LED device fabricated on the sacrificial substrate into the sacrificial substrate;
And transferring the separated LED device to a plastic substrate. 5. The method of claim 4,
The LED device is a photodynamic therapy optical device manufacturing method, characterized in that the GaN device or GaAs device. 6. The method of claim 5,
Wherein the LED element has a structure in which a plurality of unit elements form an array. The method according to claim 6,
Separating the LED device from the sacrificial substrate is a laser-beam lift-off method for irradiating a laser beam on the back of the sacrificial substrate. The method according to claim 6,
The separating of the LED device from the sacrificial substrate is a method of manufacturing an optical device for photodynamic therapy, characterized in that for boiling etching the sacrificial substrate. A method of manufacturing an optical element for photodynamic therapy,
Forming an LED device array including a plurality of LED unit devices spaced apart from each other on the sacrificial substrate;
Separating the LED element array from the sacrificial substrate and transferring the array onto a flexible plastic substrate;
Forming a contact line connected to the transferred LED unit device; And
And depositing a passivation layer on the contact line, and exposing a portion of the contact line to the outside. 10. The method of claim 9,
The LED unit device is an n-GaN layer, a multi-quantum well layer (MQW) and p-GaN layer structure GaN device, characterized in that the active layer, photodynamic therapy optical device manufacturing method. The method of claim 10,
The LED unit device is a GaAs device of the n-GaAs layer / n-AlGaInP layer / AlGaInP layer / p-AlGaInP layer structure, characterized in that the photodynamic therapy optical device manufacturing method. An optical device for photodynamic therapy prepared by the method according to any one of claims 4 to 8. A method of irradiating light using a photodynamic therapy optical device in a manner in which light irradiated from the photodynamic therapy optical device inserted into the human body reacts with the photosensitive agent administered in the human body.

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