KR20130074492A - Chemical-mechanical polishing slurry composition and method for manufacturing semiconductor device by using the same - Google Patents

Abstract

PURPOSE: A chemical-mechanical polishing slurry composition is provided to obtain a high abrasion rate by only a small amount of abrasion rate, to increase scratch and particle defect-preventing performance, and to have an excellent abrasion rate of an oxidation film in a wide pH region. CONSTITUTION: A chemical-mechanical polishing slurry composition comprises 0.1-10 wt% of an abrasive which is surface-treated with an amino silane; 0.001-1 wt% of abrasion controller of an oxidation film, which includes amine; and a residual solvent. The abrasive is a colloid silica which is surface-treated with an amino silane. A manufacturing method of a semiconductor device includes a step of polishing one selected from a metal film, a silicon oxide film, a silicon nitride film, and a combination thereof, by using the chemical-mechanical polishing slurry composition.

Description

TECHNICAL-MECHANICAL POLISHING SLURRY COMPOSITION AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE BY USING THE SAME

The present invention relates to a chemical mechanical polishing slurry composition and a method for manufacturing a semiconductor device using the same, which can realize a high polishing rate of the insulating film even with a low abrasive content, improve scratch and particle defect prevention performance, oxide film in a wide pH range The polishing speed is excellent, and the polishing rate of the oxide film can be freely adjusted while maintaining the tungsten polishing rate, and the polishing rate of tungsten can be freely adjusted, so that the selective or non-selective slurry for tungsten and the oxide film can be freely adapted to the application. The present invention relates to a chemical mechanical polishing slurry composition which can be selected and a method of manufacturing a semiconductor device using the same.

In the chemical mechanical polishing process, one of the semiconductor device manufacturing processes, a wafer is placed on the platen to be planarized, the surface of the wafer and the pad of the polishing machine are contacted, and then a slurry is supplied. The polishing pad is performed by rotating the pads of the rotating plate and the polishing machine. That is, the slurry flows between the wafer surface and the pad, and polishing of the wafer surface is caused by mechanical friction caused by the abrasive particles in the slurry and the surface protrusions of the pad, and chemical removal is performed by chemical reaction between the chemical component in the slurry and the wafer surface. .

On the other hand, the size of the gate (gate) is continuously reduced in accordance with the recent design rules, and in recent years to follow the design rules of the 20nm range, the existing slurry can not be free from scratch or particle contamination.

In addition, dishing and erosion occurs during tungsten film polishing, and there is a problem that the yield is poor. That is, the slurry used in the conventional tungsten barrier process using a slurry such as fumed silica has a low polishing rate of tungsten, a slurry having a high polishing rate of the insulating film is used. However, as the design rule decreases, there is a decrease in yield of devices due to scratch and particle contamination, and improvement is required.

In addition, conventionally used fumed silica slurry causes scratches and particles due to secondary agglomeration, and is highly likely to cause defects due to scratches and particles due to the high abrasive content, and it is difficult to increase the polishing rate of tungsten film, thereby increasing the selection ratio. Difficult to adjust freely

Korean Patent Publication No. 1987-0001286 (published: March 12, 1987) Korean Laid-Open Patent No. 2001-0106264 (published: November 29, 2001) Japanese Laid-Open Patent No. 2004-327952 (published: November 18, 2004) Japanese Laid-Open Patent No. 2007-142465 (published: June 7, 2007)

The chemical mechanical polishing slurry composition of the present invention can realize a high polishing rate of the insulating film even at a low abrasive content, thereby improving scratch and particle defect prevention performance, excellent oxide polishing rate in a wide pH range, and maintain tungsten polishing rate. While the polishing rate of the oxide film can be freely adjusted, and the polishing rate of tungsten can also be freely adjusted, so that selective or non-selective slurry for tungsten and oxide film can be freely selected to suit the application.

Chemical mechanical polishing slurry composition according to an embodiment of the present invention is 0.1 to 10% by weight of the abrasive surface treated with amino silane (amino silane), 0.001 to 1% by weight of the oxide film polishing regulator comprising an amine, and the remaining content It includes a solvent of.

The abrasive surface-treated with the amino silane may be colloidal silica surface-treated with the amino silane.

The amino silane is N- (2-aminoethyl) -3-aminopropylmethyldimethoxy silane, N- (2-aminoethyl) -3-aminopropyltrimethoxy silane, aminopropyl trialkoxysilane, gamma-aminopropyl Triethoxysilane, N- (1,3-dimethylbutylidene) -3- (triethoxysilyl) -1-propanamine, N- [2- (vinylbenzylamino) ethyl] -3-aminopropyl tri Methoxy silane, N, N'-bis [3- (trimethoxysilyl) propyl] ethylenediamine, bis (2-hydroxyethyl) -3-aminopropyl trialkoxysilane, diethylaminomethyl trialkoxysilane, ( N, N-diethyl-3-aminopropyl) trialkoxysilane, 3- (N-styrylmethyl-2-aminoethylamino) -propyltrialkoxysilane, (2-N-benzylaminoethyl) -3-amino Propyl trialkoxysilane, trialkoxysilyl propyl-N, N, N-trimethyl ammonium chloride, N- (trialkoxysilylethyl) benzyl-N, N, N-trimethyl ammonium chloride, bis (methyldialkoxy Silylpropyl) -N-methyl amine, bis (trialkoxysilylpropyl) urea, bis (3- (trialkoxysilyl) propyl) -ethylenediamine, bis (trialkoxysilylpropyl) amine, bis (trimethoxysilylpropyl) It may be any one selected from the group consisting of amines, and combinations thereof.

The amino silane may be surface treated with 0.001 to 1% by weight based on the entire abrasive.

The oxide film polishing regulator including the amine may be any one selected from the group consisting of ethylenediamine, diethylenetetraamine, bishexamethylenetriamine, hexamethylenediamine, tetramethylethylenediamine, and combinations thereof.

The oxide film polishing regulator including the amine may be any one selected from the group consisting of monoethanolamine, diethanolamine, triethanolamine, aminomethylpropanol, and combinations thereof.

The chemical mechanical polishing slurry composition is 0.0001 to 0.1 wt% of any one of tungsten polishing accelerators selected from the group consisting of ammonium metavanadate, aluminum nitrate, copper nitrate, nickel chloride, silver nitrate, titanium sulfate, and combinations thereof. It may further include.

The chemical mechanical polishing slurry composition may further include any one oxidant selected from the group consisting of hydrogen peroxide, persulfate monopersulfate, dipersulfate, and combinations thereof in an amount of 0.001 to 5% by weight.

The chemical mechanical polishing slurry composition may have a pH of 3 to 5.

According to another aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: 0.1 to 10 wt% of an abrasive treated with amino silane; Polishing any one selected from the group consisting of a metal film, a silicon oxide film, a silicon nitride film, and a combination thereof using a mechanical polishing slurry composition. The metal film may be a tungsten film.

The chemical mechanical polishing slurry composition of the present invention can realize a high polishing rate of the insulating film even at a low abrasive content, thereby improving scratch and particle defect prevention performance, excellent oxide polishing rate in a wide pH range, and maintain tungsten polishing rate. While the polishing rate of the oxide film can be freely adjusted, and the polishing rate of tungsten can also be freely adjusted, so that selective or non-selective slurry for tungsten and oxide film can be freely selected to suit the application.

The chemical mechanical polishing slurry composition according to one embodiment of the present invention comprises 0.1 to 10% by weight of the abrasive surface-treated with amino silane, 0.001 to 0.5% by weight of the oxide film polishing regulator comprising an amine, and the remaining amount of solvent.

The chemical mechanical polishing slurry composition may improve particle defects by including a small amount of abrasive, and may control the selectivity by adjusting the oxide and tungsten film polishing rates.

The abrasive may be an acid colloidal silica abrasive, and the acid colloidal silica may be an acid colloidal silica prepared by reacting an alkali metal silicic acid solution with an inorganic acid and passing through a strong acid cation exchange resin, or an acid prepared by hydrolyzing high purity alkoxy silane. Colloidal silica can be used.

The colloidal silica may have an average particle diameter of 5 to 120 nm, preferably 20 to 100 nm. If the average particle diameter of the colloidal silica is less than 5nm it is difficult to achieve the desired level of polishing rate, if it exceeds 120nm it may be difficult to maintain the stability of the abrasive.

The abrasive may be included in an amount of 0.1 to 10% by weight, preferably 5 to 10% by weight, based on the entire chemical mechanical polishing slurry composition. When the content of the abrasive is less than 0.1% by weight, it is difficult to expect a high polishing rate, and when it exceeds 10% by weight, particle defects may increase.

The abrasive is charged with a positive surface potential by amino silane treatment. The abrasive may be surface treated with 0.001 to 1% by weight of amino silane, preferably 0.05 to 0.5% by weight, based on the entire abrasive. When the content of the amino silane is less than 0.001% by weight, it is difficult to change the surface potential value, and when the amount of the amino silane exceeds 1% by weight, the surface potential is too high, and thus, the polishing rate may be reduced.

The amino silane is structurally straight and the performance improvement effect in the surface treatment is better, examples of the amino silane is N- (2-aminoethyl) -3-aminopropylmethyldimethoxy silane, N- (2-amino Ethyl) -3-aminopropyltrimethoxy silane, aminopropyl trialkoxysilane, gamma-aminopropyl triethoxysilane, N- (1,3-dimethylbutylidene) -3- (triethoxysilyl) -1 -Propanamine, N- [2- (vinylbenzylamino) ethyl] -3-aminopropyl trimethoxy silane, N, N'-bis [3- (trimethoxysilyl) propyl] ethylenediamine, bis (2- Hydroxyethyl) -3-aminopropyl trialkoxysilane, diethylaminomethyl trialkoxysilane, (N, N-diethyl-3-aminopropyl) trialkoxysilane, 3- (N-styrylmethyl-2-amino Ethylamino) -propyltrialkoxysilane, (2-N-benzylaminoethyl) -3-aminopropyl trialkoxysilane, trialkoxysilyl propyl-N, N, N-trimethyl arm Chloride, N- (trialkoxysilylethyl) benzyl-N, N, N-trimethyl ammonium chloride, bis (methyldialkoxysilylpropyl) -N-methyl amine, bis (trialkoxysilylpropyl) urea, bis (3- (Trialkoxysilyl) propyl) -ethylenediamine, bis (trialkoxysilylpropyl) amine, bis (trimethoxysilylpropyl) amine, and combinations thereof.

In particular, in the case of surface treatment with the N- (2-aminoethyl) -3-aminopropyltrimethoxy silane, the amino silane is slowly added to the abrasive and stirred with a strong stirring to enable uniform coating, and the silane is dispersed in an aqueous solution. As the alkoxy groups fall off to produce by-products in the form of alcohols, the silanol groups are strongly chemically bonded through the Si-O-Si bonds with the hydroxy groups of the abrasive, and thus the bonds are not broken by additional compounds added during the production of the polishing slurry.

The oxide polishing polishing agent comprising the amine enables high polishing rate of the insulating film even with a low abrasive content by interacting with the abrasive surface charge by the amino silane treatment, thereby causing scratches and particle defects of the chemical mechanical polishing slurry composition. Improves the prevention performance and improves the oxide polishing rate in a wide pH range.

The oxide film polishing regulator comprising the amine is ethylenediamine, diethylenetetraamine, bishexamethylenetriamine, hexamethylenediamine, tetramethylethylenediamine, monoethanolamine, diethanolamine, triethanolamine, aminomethylpropanol and combinations thereof It may be any one selected from the group consisting of, the oxide film polishing regulator comprising the amine may be any one selected from the group consisting of monoethanolamine, diethanolamine, triethanolamine, aminomethylpropanol and combinations thereof And combinations thereof.

The oxide film polishing regulator including the amine may be included in an amount of 0.001 to 1% by weight, and preferably 0.005 to 0.5% by weight based on the entire chemical mechanical polishing slurry composition. When the content of the oxide film polishing regulator containing the amine is less than 0.001% by weight, it is difficult to control the polishing of the oxide film, and when the content of the oxide film polishing agent exceeds 1% by weight, the oxide film may not be polished.

The chemical mechanical polishing slurry composition may further comprise a tungsten polishing accelerator. As the chemical mechanical polishing slurry composition further includes the tungsten polishing accelerator, it is possible to freely control the selectivity of tungsten and the oxide film so that the selective or non-selective slurry for the tungsten and the oxide film can be freely selected to suit the purpose. .

The tungsten polishing accelerator may be any one selected from the group consisting of ammonium metavanadate, aluminum nitrate, copper nitrate, nickel chloride, silver nitrate, titanium sulfate, and combinations thereof.

The tungsten polishing accelerator may be included in an amount of 0.0001 to 0.1 wt%, more preferably 0.0005 to 0.005 wt%, based on the entire chemical mechanical polishing slurry composition. When the content of the tungsten polishing accelerator is less than 0.0001% by weight, it is difficult to expect the improvement of the tungsten polishing rate, and when the content of the tungsten polishing accelerator exceeds 0.1% by weight, it is difficult to control the polishing properties.

The chemical mechanical polishing slurry composition may further include an oxidizing agent. The oxidant may be any one selected from the group consisting of compounds having one or more peroxy groups, compounds containing elements in the highest oxidation state, and combinations thereof.

Compounds having one or more peroxy groups include hydrogen peroxide, urea hydrogen peroxide or percarbonate, organic peroxide addition products such as benzoyl peroxide, peracetic acid or di-t-butyl peroxide, persulfate (monoper Sulfate or dipersulfate), sodium peroxide or mixtures thereof, and the like.

Compounds containing the element in the highest oxidation state include periodate, perborate, permanganate and the like.

In addition, a non-compound may be used as the oxidant, and the non-compound may be a cerium (IV) compound such as bromate, chromate, iodate, iodide or cerium ammonium nitrate and ferric nitrate. Compounds can be used.

Hydrogen peroxide may be preferably used as the oxidizing agent, and the oxidizing agent may be included in an amount of 0.001 to 5% by weight, preferably 0.05 to 3% by weight, based on the entire chemical mechanical polishing slurry composition. When the content of the oxidizing agent is less than 0.001% by weight, scratches may be seriously generated on the surface of titanium, which is a barrier metal film, and when the content of the oxidizing agent is more than 5% by weight, the polishing rate of the silicon oxide film may be reduced.

The chemical mechanical polishing slurry composition may have a pH of 3 to 5, preferably 3 to 3.9. When the pH of the chemical mechanical polishing slurry composition is within the above range, the polishing rate of the silicon oxide film and the polishing selectivity of the silicon oxide film to the silicon nitride film may be improved. In addition, when the pH of the chemical mechanical polishing slurry composition is less than 3, the polishing rate is decreased to obtain a desired polishing selectivity. When the chemical mechanical polishing slurry composition is more than 5, stability may occur due to aggregation of the slurry during long-term storage.

The chemical mechanical polishing slurry composition includes potassium hydroxide, ammonium hydroxide, tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrabutylammonium hydroxide, nitric acid, hydrochloric acid, sulfuric acid, perchloric acid, phosphoric acid and their It may further comprise any one pH adjuster selected from the group consisting of a combination.

The chemical mechanical polishing slurry composition may further include a corrosion inhibitor. The corrosion inhibitors 1,2,4-triazole, benzotriazole, 5-methyl-benzotriazole, 5-aminotetrazole, 1-alkyl-5-aminotetrazole, 5-hydroxy-tetrazole, 1 Any one selected from the group consisting of -alkyl-5-hydroxy-tetrazole, tetrazol-5thiol, imidazole and combinations thereof can be used.

The corrosion inhibitor may be included in the chemical mechanical polishing slurry composition in an amount of 0.0001 to 0.5% by weight based on the total. When the content of the corrosion inhibitor is less than 0.0001% by weight, it is difficult to expect the effect of inhibiting corrosion, and when the content of the corrosion inhibitor is more than 0.5% by weight, the polishing rate for the metal film may be lowered, and solubility problems may occur and the corrosion inhibitor may be precipitated. .

The solvent included in the chemical mechanical polishing slurry composition may be used as long as it is used in the chemical mechanical polishing slurry composition. For example, deionized water may be used, but the present invention is not limited thereto. In addition, the content of the solvent is the remaining content of the entire surface of the slurry composition for chemical mechanical polishing, except for the amount of additives and additional additives such as the abrasive surface-treated with the amino silane, the oxide film polishing regulator.

Method of manufacturing a semiconductor device according to another embodiment of the present invention using the chemical mechanical polishing slurry composition comprises polishing any one selected from the group consisting of metal film, silicon oxide film, silicon nitride film and combinations thereof. do. In particular, the metal film may be a tungsten film, and the chemical mechanical polishing slur composition may freely control the polishing rate of the oxide film while maintaining the tungsten polishing rate, and the polishing rate of the tungsten may also be freely controlled, thereby controlling the tungsten and the oxide film. Optional or non-selective slurries can be freely selected to suit the application.

The method for polishing any one selected from the group consisting of the metal film, the silicon oxide film, the silicon nitride film, and a combination thereof using the chemical mechanical polishing slurry composition may be any conventional polishing method and conditions. It does not specifically limit in this invention.

Hereinafter, embodiments of the present invention will be described in detail so that those skilled in the art can easily carry out the present invention. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Like parts are designated with like reference numerals throughout the specification.

[Experimental Example]

The tungsten wafer used for polishing used a wafer on which a thin film having a thickness of 7000 Å was deposited. As a silicon oxide film, a wafer on which a PETEOS thin film of 20000 mm thick was deposited was used, and a silicon nitride film was used to a wafer on which a 2000 mW thin film was deposited.

The polishing equipment used was DND UNIPLA211 (Doosan Mecatec), and the polishing pad was subjected to polishing test using IC1000 (DOWSA). The polishing conditions were spindle / table speed of 80 / 24rpm and polishing pressure. 3 psi, slurry feed flow rate 200ml / min, polishing time was carried out in 30 seconds to 60 seconds.

The thin film thickness was converted to the thickness after measuring sheet resistance using a four probe surface resistance measuring instrument (Four Point Probe, NAPSON). Thin film thickness of PETEOS and silicon nitride film was measured by Spectra Thick 4000ST (K-MAC).

Particle defects (defects) was measured by the number of particles detected in the range of less than 0.16um using KLA Tencor's SP1TBI.

(Experimental Example 1)

To prepare a chemical mechanical polishing slurry composition using a variety of abrasives in the composition shown in Table 1. In addition, the polishing evaluation of the prepared chemical mechanical polishing slurry composition was carried out, and the results are also shown in Table 1 below. When the chemical mechanical polishing slurry composition was prepared, it was adjusted to a desired pH using nitric acid and potassium hydroxide as needed.

Experiment pH Abrasive Abrasive size (nm) Abrasive (wt%) W RR
(Å / min) PETEOS RR (Å / min) Scratch
(SP1TBI) Comparative Example 1-1 9.50 Fumed
silica 120 5 52 803 height Comparative Example 1-2 3.60 Fumed alumina 120 5 488 70 height Reference Example 1-1 3.60 Colloid silica 120 5 157 371 usually Reference Example 1-2 3.60 Colloid silica 75 5 221 448 usually Reference Example 1-3 3.60 Colloid silica 55 5 251 492 usually Reference Example 1-4 3.60 Colloid silica 35 5 302 555 usually

Referring to Table 1, when using the colloidal silica abrasive, the polishing rate is high, it can be seen that the scratch is lowered.

(Experimental Example 2)

N- (2-aminoethyl) -3-aminopropyltrimethoxy silane was uniformly surface treated at 0.25% by weight based on the weight of the abrasive to the abrasive of Experimental Example 1 to prepare a chemical mechanical polishing slurry composition. In addition, the polishing evaluation of the prepared chemical mechanical polishing slurry composition was carried out, and the results are also shown in Table 2 below.

Experiment pH Abrasive Abrasive size (nm) Abrasive (wt%) Surface Treatment (wt%) W RR
(Å / min) PETEOS RR (Å / min) Comparative Example 2-1 9.50 Fumed silica 120 5 0.25 102 705 Comparative Example 2-2 3.60 Fumed alumina 100 5 0.25 377 6 Example 2-1 3.60 Colloid silica 120 5 0.25 206 514 Example 2-2 3.60 Colloid silica 75 5 0.25 267 755 Example 2-3 3.60 Colloid silica 55 5 0.25 215 1011 Examples 2-4 3.60 Colloid silica 35 5 0.25 222 1440

Referring to Table 2, in the case of the surface-treated colloidal silica shows a phenomenon that the polishing rate is significantly increased, it can be seen that the removal rate of fumed silica or alumina is reduced.

(Experimental Example 3)

In Example 2-3, a chemical mechanical polishing slurry composition was prepared by surface-treating the abrasive using amino silane as shown in Table 3 instead of N-2 (aminoethyl) -3-aminopropyltrimethoxy silane. In addition, the polishing evaluation of the prepared chemical mechanical polishing slurry composition was carried out, and the results are also shown in Table 3 below.

Experiment pH Silane type W RR
(Å / min) PETEOS RR (Å / min) Example
2-3 3.60 N-2- (aminoethyl) -3-aminopropyltrimethoxysilane 251 492 Comparative Example
3-1 3.60 Vinyltriethoxy silane 188 232 Comparative Example
3-2 3.60 3-Glycidoxypropyltrimethoxy silane 121 255 Comparative Example
3-3 3.60 2- (3,4-Epoxycyclohexyl) ethyltrimethoxy silane 155 338 Example
3-1 3.60 N- (2-Aminoethyl) -3-aminopropylmethyldimethoxy silane 281 899 Example
3-2 3.60 N-2 (2-Aminoethyl) -3-aminopropyltrimethoxy silane 287 1059 Example
3-3 3.60 3-Aminopropyltriethoxy silane 312 1011 Example
3-4 3.60 N- (1,3-dimethylbutylidene) -3- (triethoxysilyl) -1-propaneamine 277 984 Example
3-5 3.60 N- [2- (Vinylbenzylamino) ethyl] -3-aminopropyl trimethoxy silane 249 842 Example
3-6 3.60 N, N'-Bis [3- (trimethoxysilyl) propyl] ethylene diamine 50% 213 778

Referring to Table 3, it can be seen that the polishing rate of the W and PETEOS thin film according to the type of amino silane surface-treated in the abrasive, the polishing rate of the surface-treated abrasive with the amino silane containing the amine group increases.

(Experimental Example 4)

The polishing evaluation was performed by changing the content and pH of the abrasive in the composition of Example 2-3, the results are shown in Table 4 below.

Experiment pH Abrasive
(weight%) W RR
(Å / min) PETEOS RR
(Å / min) 0.16㎛ Particle
defects (ea) Example 4-1 3.60 10 335 1082 889 Example 4-2 3.60 8 287 1059 701 Example 4-3 3.60 5 215 1011 627 Example 4-4 3.60 3 201 998 610 Example 4-5 3.60 One 198 899 450 Examples 4-6 2.80 One 152 382 215 Examples 4-7 3.00 One 180 667 332 Examples 4-8 3.30 One 189 793 350 Examples 4-9 3.90 One 188 881 479 Examples 4-10 4.50 One 161 668 558 Comparative Example 4-1 9.50 Fumed silica 5% 22 102 2255

Referring to the results of Table 4, it can be seen that the decrease in polishing rate from pH 3.0 to 4.5 is insignificant, and the polishing rate reaches its peak at pH 3.6. In addition, even if the content of the abrasive is reduced to 1% by weight it can be seen that the decrease in the PETEOS polishing rate is not large.

(Experimental Example 5)

The chemical mechanical polishing slurry composition was prepared by changing the composition of the oxide film polishing regulator as shown in Table 5 in the composition of Example 4-4. In addition, the polishing evaluation of the prepared chemical mechanical polishing slurry composition was carried out, and the results are also shown in Table 5 below.

Slurry Additive type content
(weight%) W RR
(Å / min) PETEOS RR
(Å / min) Reference Example 4-4 None 0 198 899 Example 5-1 Ethylenediamine 0.010 421 569 Example 5-2 Diethylenetetramine 0.010 253 605 Example 5-3 Bis (Hexamethylene) triamine 0.010 337 725 Examples 5-4 Diethylamine 0.010 343 756 Example 5-5 Heaxmethylenediamine 0.010 352 604 Example 5-6 Tetramethylethylenediamine 0.010 370 638 Example 5-7 Monoethanolamine 0.010 305 569 Examples 5-8 Triethanolamine 0.010 280 675 Example 5-9 Aminomethylpropanol 0.010 260 549

Referring to Table 5 above, it can be seen that the W polishing rate is increased when the oxide film polishing regulator including the amine is included, and PETEOS polishing rate can be adjusted.

(Experimental Example 6)

In order to increase the W polishing rate in the composition of Example 5-1, the chemical mechanical polishing slurry composition was prepared by changing the composition of the tungsten polishing accelerator as shown in Table 6 below. In addition, the polishing evaluation of the prepared chemical mechanical polishing slurry composition was carried out, and the results are also shown in Table 6 below.

Slurry Additive type content
(weight%) W RR
(Å / min) PETEOS RR
(Å / min) Example 5-1 None - 421 569 Example 6-1 NH ₄ VO ₃ 0.001 537 807 Example 6-2 Al (NO ₃ ) ₃ 0.001 635 971 Example 6-3 Cu (NO ₃ ) ₂ 0.001 1191 873 Example 6-4 NiCl ₂ , 6H ₂ O 0.001 569 634 Examples 6-5 AgNO ₃ 0.001 760 714 Examples 6-6 Ti ₂ (SO ₄ ) ₃ 0.001 462 672

Referring to Table 6, the addition of tungsten polishing regulator did not significantly change the PETEOS polishing rate showed a sharp increase in the polishing rate of W.

Although the preferred embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto, and various modifications and improvements of those skilled in the art using the basic concepts of the present invention defined in the following claims are also provided. It belongs to the scope of rights.

Claims (11)

0.1 to 10% by weight of abrasive surface-treated with amino silane,
0.001 to 1% by weight of an oxide polishing regulator comprising an amine, and
A chemical mechanical polishing slurry composition comprising the remaining amount of solvent. The method of claim 1,
Wherein the abrasive surface-treated with amino silane is colloidal silica surface-treated with amino silane. The method of claim 1,
The amino silane is N- (2-aminoethyl) -3-aminopropylmethyldimethoxy silane, N- (2-aminoethyl) -3-aminopropyltrimethoxy silane, aminopropyl trialkoxysilane, gamma-aminopropyl Triethoxysilane, N- (1,3-dimethylbutylidene) -3- (triethoxysilyl) -1-propanamine, N- [2- (vinylbenzylamino) ethyl] -3-aminopropyl tri Methoxy silane, N, N'-bis [3- (trimethoxysilyl) propyl] ethylenediamine, bis (2-hydroxyethyl) -3-aminopropyl trialkoxysilane, diethylaminomethyl trialkoxysilane, ( N, N-diethyl-3-aminopropyl) trialkoxysilane, 3- (N-styrylmethyl-2-aminoethylamino) -propyltrialkoxysilane, (2-N-benzylaminoethyl) -3-amino Propyl trialkoxysilane, trialkoxysilyl propyl-N, N, N-trimethyl ammonium chloride, N- (trialkoxysilylethyl) benzyl-N, N, N-trimethyl ammonium chloride, bis (methyldialkoxy Silylpropyl) -N-methyl amine, bis (trialkoxysilylpropyl) urea, bis (3- (trialkoxysilyl) propyl) -ethylenediamine, bis (trialkoxysilylpropyl) amine, bis (trimethoxysilylpropyl) A chemical mechanical polishing slurry composition, which is any one selected from the group consisting of amines, and combinations thereof. The method of claim 1,
Wherein said amino silane is surface treated at 0.001 to 1% by weight relative to the entire abrasive. The method of claim 1,
The oxide film polishing regulator including the amine is any one selected from the group consisting of ethylenediamine, diethylenetetraamine, bishexamethylenetriamine, hexamethylenediamine, tetramethylethylenediamine and combinations thereof. Composition. The method of claim 1,
The oxide film polishing regulator comprising the amine is any one selected from the group consisting of monoethanolamine, diethanolamine, triethanolamine, aminomethylpropanol and combinations thereof. The method of claim 1,
The chemical mechanical polishing slurry composition is 0.0001 to 0.1 wt% of any one of tungsten polishing accelerators selected from the group consisting of ammonium metavanadate, aluminum nitrate, copper nitrate, nickel chloride, silver nitrate, titanium sulfate, and combinations thereof. The chemical mechanical polishing slurry composition further comprising. The method of claim 1,
The chemical mechanical polishing slurry composition further comprises 0.001 to 5% by weight of any one oxidant selected from the group consisting of hydrogen peroxide, persulfate monopersulfate, dipersulfate, and combinations thereof. The method of claim 1,
Wherein said chemical mechanical polishing slurry composition has a pH of 3-5. Metal film, silicon oxide film, silicon nitride film using a chemical mechanical polishing slurry composition comprising 0.1 to 10% by weight of the abrasive surface-treated with amino silane, 0.001 to 1% by weight of the oxide film polishing regulator including the amine, and the remainder of the solvent. And polishing any one selected from the group consisting of a combination thereof. The method of claim 10,
And said metal film is a tungsten film.