KR20130072012A - Sintered body and method for the same - Google Patents

Sintered body and method for the same Download PDF

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Publication number
KR20130072012A
KR20130072012A KR1020110139550A KR20110139550A KR20130072012A KR 20130072012 A KR20130072012 A KR 20130072012A KR 1020110139550 A KR1020110139550 A KR 1020110139550A KR 20110139550 A KR20110139550 A KR 20110139550A KR 20130072012 A KR20130072012 A KR 20130072012A
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KR
South Korea
Prior art keywords
layer
substrate
coating layer
sintered body
reinforcing layer
Prior art date
Application number
KR1020110139550A
Other languages
Korean (ko)
Inventor
황금찬
Original Assignee
엘지이노텍 주식회사
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Publication date
Application filed by 엘지이노텍 주식회사 filed Critical 엘지이노텍 주식회사
Priority to KR1020110139550A priority Critical patent/KR20130072012A/en
Publication of KR20130072012A publication Critical patent/KR20130072012A/en

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    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/46—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with organic materials
    • C04B41/49—Compounds having one or more carbon-to-metal or carbon-to-silicon linkages ; Organo-clay compounds; Organo-silicates, i.e. ortho- or polysilicic acid esters ; Organo-phosphorus compounds; Organo-inorganic complexes
    • C04B41/4905—Compounds having one or more carbon-to-metal or carbon-to-silicon linkages ; Organo-clay compounds; Organo-silicates, i.e. ortho- or polysilicic acid esters ; Organo-phosphorus compounds; Organo-inorganic complexes containing silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02167—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material

Abstract

Sintered body according to the embodiment is a substrate; An adhesion reinforcing layer positioned on the substrate; And a coating layer positioned on the adhesion reinforcing layer, wherein the adhesion reinforcing layer and the coating layer include the same material.
Method for producing a sintered body according to the embodiment comprises the steps of preparing a substrate; Forming a pre-adhesion strengthening layer on the substrate; Impregnating silicon into the substrate and the pre-bonded reinforcement layer; And forming a coating layer on the substrate.

Description

Sintered body, susceptor and manufacturing method thereof {SINTERED BODY AND METHOD FOR THE SAME}

The present disclosure relates to a sintered body, a susceptor and a method for producing the same.

Silicon carbide (SiC) is a composite material and is the most important carbide in the field of ceramics. Silicon carbide has a β phase having a cubic crystal structure and an α phase having a hexagonal crystal structure. The β phase is stable in the temperature range of 1400-1800 ° C., and the α phase is formed at 2000 ° C. or higher. The molecular weight of SiC is 40.1, specific gravity is 3.21, and it decomposes at 2500 degreeC or more. SiC has been attracting attention as a high-temperature structural material because of its high temperature strength, abrasion resistance, oxidation resistance, corrosion resistance, creep resistance, etc. It is a material that receives. In addition, it is a high-grade ceramic material widely used in mechanical seals, bearings, various nozzles, high temperature cutting tools, fireproof plates, abrasives, reducing materials in steelmaking, and lightning arresters.

In particular, in the case of a sintered body used at high temperatures, the coating layer is included, and there is a problem that the coating layer is peeled off and the service life is reduced due to the use at high temperatures.

The embodiment is to provide a sintered body with improved reliability.

Sintered body according to the embodiment is a substrate; An adhesion reinforcing layer positioned on the substrate; And a coating layer positioned on the adhesion reinforcing layer, wherein the adhesion reinforcing layer and the coating layer include the same material.

Method for producing a sintered body according to the embodiment comprises the steps of preparing a substrate; Forming a pre-adhesion strengthening layer on the substrate; Impregnating silicon into the substrate and the pre-bonded reinforcement layer; And forming a coating layer on the substrate.

Susceptor according to the embodiment, the substrate; An adhesion reinforcing layer positioned on the substrate; And a coating layer on the adhesion reinforcing layer, wherein the substrate includes graphite, and the adhesion reinforcing layer and the coating layer include silicon carbide (SiC).

The sintered compact according to the embodiment includes a substrate, an adhesion reinforcing layer and a coating layer. The adhesion reinforcing layer may include the same material as the coating layer. Therefore, the adhesion reinforcing layer and the coating layer may have the same characteristics, and can enhance the adhesion between the substrate and the coating layer. That is, the coating layer can be prevented from peeling off from the substrate, and the service life of the sintered body can be extended.

The manufacturing method of the sintered compact which concerns on an Example can obtain the sintered compact which has the above-mentioned effect.

1 is a cross-sectional view of a sintered body according to an embodiment.
FIG. 2 is an enlarged cross-sectional view of part A of FIG. 1.
3 to 7 are cross-sectional views illustrating a method of manufacturing a sintered compact according to an embodiment.

In the description of embodiments, each layer, region, pattern, or structure may be “on” or “under” the substrate, each layer, region, pad, or pattern. Substrate formed in ”includes all formed directly or through another layer. The criteria for top / bottom or bottom / bottom of each layer are described with reference to the drawings.

The thickness or the size of each layer (film), region, pattern or structure in the drawings may be modified for clarity and convenience of explanation, and thus does not entirely reflect the actual size.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

First, with reference to FIG. 1 and FIG. 2, the sintered compact which concerns on an Example is demonstrated in detail. 1 is a cross-sectional view of a sintered body according to an embodiment. FIG. 2 is an enlarged cross-sectional view of part A of FIG. 1.

1 and 2, the sintered body according to the embodiment includes a substrate 100, an adhesion reinforcing layer 200, and a coating layer 300.

The substrate 100 may support the adhesion reinforcing layer 200 and the coating layer 300. The substrate 100 includes graphite.

The adhesion reinforcing layer 200 is located on the substrate 100. The adhesion reinforcing layer 200 is located between the substrate 100 and the coating layer 300.

The adhesion reinforcing layer 200 may include the same material as the coating layer 300. Specifically, the adhesion reinforcing layer 200 may include silicon carbide (SiC). Therefore, the adhesion reinforcing layer 200 and the coating layer 300 may have the same characteristics, and may enhance the adhesion between the substrate 100 and the coating layer (300). That is, the coating layer 300 can be prevented from being peeled from the substrate 100, and the service life of the sintered body can be extended.

The thickness T of the adhesion reinforcing layer 200 may be 100 um to 5 mm. When the thickness T of the adhesion reinforcing layer 200 is less than 100 μm, it may not play a role of reinforcing adhesion of the adhesion reinforcing layer 200. In addition, when the thickness T of the adhesive reinforcement layer 200 exceeds 5 mm, the entire thickness of the sintered compact may be thickened.

The coating layer 300 is located on the adhesion reinforcing layer 200. The coating layer 300 may typically have a thickness of 80 um to 120 um.

The coating layer 300 may protect the substrate 100. In addition, the coating layer 300 may allow the sintered body to have excellent properties from high temperature or heat resistance.

Here, the substrate 100, the adhesion reinforcing layer 200, and the coating layer 300 may include the same material. Specifically, the adhesion reinforcing layer 200 and the coating layer 300 may include silicon. More specifically, the substrate 100, the adhesion reinforcing layer 200, and the coating layer 300 may include silicon.

The sintered body according to the embodiment can be used as a susceptor used in the deposition equipment. In addition, it can be used as various heat treatment members such as etching equipment or jig for semiconductor manufacturing.

Hereinafter, the manufacturing method of the sintered compact which concerns on an Example with reference to FIGS. 3-7 is demonstrated in detail. For clarity and simplicity, detailed descriptions of parts identical or similar to those described above will be omitted.

3 to 7 are cross-sectional views illustrating a method of manufacturing a sintered compact according to an embodiment.

The sintered body manufacturing method according to the embodiment includes preparing a substrate 100, forming a preliminary adhesion reinforcing layer 210, impregnating silicon and forming a coating layer 300.

Referring to FIG. 3, in the preparing of the substrate 100, a substrate 100 including graphite may be prepared.

Subsequently, referring to FIG. 4, in the forming of the preliminary adhesion reinforcing layer 210, a preliminary adhesion reinforcing layer 210 may be formed on the substrate 100. The thickness of the preliminary adhesive reinforcement layer 210 may be 100 um to 5 mm. The preliminary adhesive reinforcement layer 210 may include silicon carbide and carbon. Specifically, the pre-adhesion strengthening layer 210 may include silicon carbide powder, phenol and a binder.

Subsequently, referring to FIG. 5, in the impregnation, silicon (Si) may be impregnated into the substrate 100 and the preliminary adhesion reinforcing layer 210. In particular, in the impregnating step, the silicon of high purity may be impregnated into the substrate 100 and the preliminary adhesion reinforcing layer 210.

On the other hand, the impregnation is preferably carried out in a vacuum atmosphere or inert gas atmosphere.

The high purity metal silicon to be impregnated can be heated at a temperature above the melting point. Specifically, the molten metal silicon can be impregnated by heating at a temperature of 1500 ° C to 2000 ° C. Preferably, the molten metal silicon can be impregnated at a temperature of 1500 ° C to 1750 ° C.

Silicon, which has become a liquid, may penetrate into pores in the substrate 100 and the preliminary adhesion-enhancing layer 210 by capillary action.

Subsequently, referring to FIG. 6, after the impregnation, silicon carbide may grow crystal. Specifically, silicon carbide included in the preliminary adhesion reinforcing layer 210 may be crystal-grown to form an adhesion reinforcing layer 200.

Subsequently, referring to FIG. 7, a coating layer 300 may be formed on the adhesion reinforcing layer 200. The coating layer 300 may be formed by chemical vapor deposition (CVD).

Hereinafter, the present invention will be described in more detail with reference to Examples and Comparative Examples.

Example 1

As a substrate, a graphite plate having a density of 1.85 g / cm 3 and a metal impurity of 10 ppm or less was used. The graphite plate was subjected to high-purity silicon impregnation treatment while maintaining the graphite plate at 1550 ° C. for 30 minutes using metallic silicon in an argon atmosphere. A graphite-silicon carbide base material having a silicon carbide layer crystal grown to a thickness of 100 um was obtained. CVD-silicon carbide was coated on the obtained graphite-silicon carbide base material to form a coating film.

Example 2

The same procedure as in Example 1 was performed except that the high purity silicon impregnation treatment was performed while maintaining the graphite plate for 60 minutes. At this time, a graphite-silicon carbide base material having a silicon carbide layer crystal grown to a thickness of 200 um was obtained.

Example 3

The same procedure as in Example 1 was performed except that the high purity silicon impregnation treatment was performed while maintaining the graphite plate for 90 minutes. At this time, a graphite-silicon carbide base material having a silicon carbide layer crystal grown to a thickness of 2 mm was obtained.

Example 4

The same procedure as in Example 1 was carried out except that the high purity silicon impregnation treatment was performed while maintaining the graphite plate for 120 minutes. At this time, a graphite-silicon carbide base material having a silicon carbide layer crystal grown to a thickness of 5 mm was obtained.

Comparative Example 1

The graphite plate was prepared in the same manner as in Example 1 except that the high purity silicon impregnation treatment was not performed. At this time, CVD-silicon carbide was coated to form a coating film having a thickness of 80 um.

Comparative Example 2

CVD-silicon carbide was coated in the same manner as in Comparative Example 1 except that a coating film having a thickness of 120 um was formed.

In Example 1, the adhesion between the coating film and the base material was measured, and the result was 10 MPa. In Example 2, the adhesion between the coating film and the base material was measured, and the result was 25 MPa. In Example 3, the adhesion between the coating film and the base material was measured, and the result was 28 MPa. In Example 4, the adhesion between the coating film and the base material was measured, and the result was 27 MPa. In Comparative Example 1, the adhesion between the coating film and the graphite plate was measured, and the result was 2.8 MPa. In Comparative Example 2, the adhesion between the coating film and the graphite plate was measured, and the result was 3 MPa.

Through the above results, it can be seen that the adhesion in Examples 1 to 4 impregnated with high-purity silicon is superior to Comparative Examples 1 and 2 that are not.

The features, structures, effects and the like described in the foregoing embodiments are included in at least one embodiment of the present invention and are not necessarily limited to one embodiment. Further, the features, structures, effects, and the like illustrated in the embodiments may be combined or modified in other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be construed as limiting the scope of the present invention. It can be seen that various modifications and applications are possible. For example, each component specifically shown in the embodiments may be modified. It is to be understood that the present invention may be embodied in many other specific forms without departing from the spirit or essential characteristics thereof.

Claims (10)

materials;
An adhesion reinforcing layer positioned on the substrate; And
It includes a coating layer located on the adhesive strengthening layer,
The sintered body of the adhesive reinforcing layer and the coating layer comprises the same material. The method of claim 1,
The base material, the adhesive strengthening layer and the coating layer is a sintered body containing the same material. The method of claim 1,
The sintered compact, wherein the adhesion reinforcing layer and the coating layer comprise silicon. The method of claim 1,
The substrate includes graphite, and the adhesion reinforcing layer and the coating layer comprises silicon carbide (SiC). The method of claim 5,
Sintered body of the adhesive reinforcing layer is 100 um to 5 mm in thickness. Preparing a substrate;
Forming a pre-adhesion strengthening layer on the substrate;
Impregnating silicon into the substrate and the pre-bonded reinforcement layer; And
Sintered body manufacturing method comprising the step of forming a coating layer on the substrate. The method according to claim 6,
The preliminary adhesive reinforcing layer is a sintered body manufacturing method containing silicon carbide and carbon. The method of claim 7, wherein
In the impregnating step, the silicon carbide contained in the pre-bonded reinforcement layer crystal growth method. The method according to claim 6,
The substrate is a sintered body manufacturing method comprising graphite. materials;
An adhesion reinforcing layer positioned on the substrate; And
It includes a coating layer located on the adhesive strengthening layer,
The substrate includes graphite, and the adhesion reinforcing layer and the coating layer is a susceptor comprising silicon carbide (SiC).
KR1020110139550A 2011-12-21 2011-12-21 Sintered body and method for the same KR20130072012A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101627735B1 (en) * 2015-03-27 2016-06-07 탑코팅(주) A Manufacturing Method of SiC Coating Layer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101627735B1 (en) * 2015-03-27 2016-06-07 탑코팅(주) A Manufacturing Method of SiC Coating Layer

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