KR20130071292A - System and method for controlling disparate phase over a rf plasma system - Google Patents

Abstract

PURPOSE: A system and a method for controlling disparate phases in an RF plasma system are provided to check and actively control the phases which are changed by processing the conditions not to be interfered, and perform shifting and matching phases. CONSTITUTION: A system for controlling disparate phases in an RF plasma system comprises a radio frequency generator(210), a phase shift unit(220), an output port(230), and a phase shifting signal processor(240). The radio frequency generator generates at least one high powered radio frequency. A plasma generator generates plasma. The phase shifting detector detects the phase of the generated plasma. A phase control unit corrects the phases by shifting the detected phase of the plasma to phase the high powered radio frequency. [Reference numerals] (220) Phase shift unit; (230) Output port; (240) Phase shifting signal processor

Description

SYSTEM AND METHOD FOR CONTROLLING DISPARATE PHASE OVER A RF PLASMA SYSTEM}

The present invention relates to RF plasma systems and methods, and more particularly, to systems and methods for controlling different phases in an RF plasma system that actively match different phases in an RF plasma system to match phases.

Generally in plasma processing applications such as the manufacture of semiconductor or flat panel displays, an RF power generator can apply a voltage to a load of a plasma chamber and operate over a wide range of frequencies. The impedance of the process plasma may vary depending on the frequency of this applied voltage, chamber pressure, gas composition, and target or substrate material. In conclusion, a reactive impedance matching network is generally used to convert the chamber impedance into an ideal load in the RF power generator.

Multiple frequencies are always present in RF plasma processing systems. These other frequencies may be the result of harmonics of the fundamental operating frequency. In many applications, multiple frequencies may be the result of separate power delivery systems, operating on the same tool. Typical configurations on commercial plasma processing tools include, but are not limited to, dual frequency systems such as 13.56 MHz-350 kHz, 60 MHz-2 MHz, and 27.12 MHz-2 MHz. Because of the existence of other frequencies, additional RF circuitry is provided for components designed to operate primarily within one frequency range, thus affecting the termination impedance as seen by separate frequencies. Controlling this termination impedance allows control and confinement of voltage and current components at secondary frequencies within the plasma process. Circuits intended to terminate the secondary frequency provide the desired termination impedance at the secondary frequency without adversely affecting the component's performance within the main operating frequency range.

By the way, in this kind of plasma processing apparatus, the value of the high frequency power applied to the electrode in the processing chamber is an important factor for the plasma stabilization generated in the processing chamber.

For example, US Patent No. 4871421, which is a prior art, provides a transformer having a center tap of the secondary coil grounded between a high frequency power supply and an upper electrode and a lower electrode, and phases the high frequency power from the high frequency power supply by 180 degrees. A plasma etching apparatus configured to distribute another 50:50 power and to supply the upper electrode and the lower electrode is disclosed. In such a plasma etching apparatus, the potential difference between the upper electrode and the lower electrode can be made larger than the potential difference between these electrodes and the side wall of the processing chamber. Therefore, it is possible to prevent abnormal discharge due to the electrons in the plasma flying toward the chamber side wall. However, the U.S. Patent No. 4871421 has a problem that actual power fluctuates due to factors such as a change in electrical characteristics of each member due to temperature change, and damage to the stabilization of the plasma, which in turn lowers the precision of etching treatment. have.

In addition, conventionally, a plurality of RF generators having the same frequency are used to increase the deposition and etching rate of the deposition and etching process. In this case, not only the phase that changes according to the process conditions is not controlled so as not to be interfered with, and the phase that changes There is a problem to operate only by manual in order to check and control.

Accordingly, the present invention provides a system and method for controlling different phases in an RF plasma system to actively match different phases in an RF plasma system in order to solve the above problems.

According to the present invention for achieving the above-described aspect, in the RF (Radio Frequency) plasma system for controlling different phases, at least one high output radio frequency generator for generating a high output radio frequency and plasma generation for generating at least one plasma A phase for correcting the phase by displacing the detected at least one plasma phase to a phase of the generated at least one high output radio frequency; It includes a control unit.

In addition, the present invention for achieving the above-mentioned in the method for controlling different phases in a radio frequency (RF) plasma system, generating at least one high-power radio frequency, generating at least one plasma and And detecting a phase of the generated at least one plasma, and correcting the phase by displacing the detected at least one plasma phase to a phase of the generated at least one high output radio frequency.

According to the present invention, the phases of the RF plasma system can be actively controlled to match the phases, thereby not only controlling not to interfere with the phases changing according to the process conditions, but also actively checking and controlling the phases changing. It works.

1 is a block diagram showing an RF plasma system for controlling different phases according to an embodiment of the present invention.
2 is a detailed block diagram of a phase controller for controlling phase in a plasma system according to an exemplary embodiment of the present invention.
3 is a flowchart illustrating a method of controlling different phases in an RF plasma system according to an embodiment of the present invention.

Hereinafter, with reference to the accompanying drawings will be described in detail the operating principle of the preferred embodiment of the present invention. In the following description of the present invention, detailed descriptions of well-known functions or configurations will be omitted if it is determined that the detailed description of the present invention may unnecessarily obscure the subject matter of the present invention. In addition, terms to be described below are terms defined in consideration of functions in the present invention, and may be changed according to a user, a user's intention or custom. Therefore, the definition should be based on the contents throughout this specification.

1 is a block diagram showing an RF plasma system for controlling different phases according to an embodiment of the present invention.

As shown, the RF plasma system for controlling different phases according to an embodiment of the present invention, the first and second high power RF generator 110, 120 for generating a high power radio frequency, and the first high power generator The phase of the plasma output from the first RF matching unit 130 matching the radio frequency output from the 110 and the inductively coupled plasma (ICP) generating device 171 of the plasma generating unit 170 is determined. A capacitively coupled plasma of the first phase detector 150 to detect, the second RF matcher 140 to match the radio frequency output from the second high power generator 120, and the plasma generator 170. A second phase detector 160 detecting a phase of the plasma output from the coupled plasma generator (CCP) generator 172 and a different phase output from the first phase detector 150 and the second phase detector 160. Phase control unit 180 to control the It includes.

The plasma generator 170 includes an inductively coupled plasma (ICP) generating device 171 and a capacitively coupled plasma (CCP) generating device 172, and all of Etcher, suptter, and CVD equipment. Equipment with multiple identical frequencies may be included to improve the etch or deposition rate.

Hereinafter, an RF plasma system for controlling different phases according to an embodiment of the present invention will be described in detail with reference to FIG. 1.

The first high power RF generator 110 generates a high frequency radio frequency. The radio frequency generated is 13.56 MHz. The second high power RF generator 120 generates a radio frequency having the same frequency as the frequency generated by the first high power RF generator 110. Although only two high power RF generators have been described in the embodiments of the present invention, this is only an embodiment, and the present invention may include two or more high power RF generators.

The high output radio frequency output from the first high output RF generator 110 is input to the first RF matching unit 130, and the high output radio frequency output from the second high output RF generator 130 is the second RF matching unit. 140 is entered. Since the first RF matching unit 130 is different from the impedance of the inductively coupled plasma (ICP) generating device 171 of the plasma generating unit 170, the phase is changed according to a preset matching value. In addition, since the second RF matching unit 140 is different from the impedance of the capacitively coupled plasma (CCP) generating device 172 of the plasma generating unit 170, the phase is changed according to a preset matching value. do.

The first phase detector 150 uses a phase output from the first RF matching unit 130 and a phase of the plasma generated from the inductively coupled plasma (ICP) generator 171 to adjust the phase. The second phase detector 160 detects the phase using the result of the output from the second RF matcher 140 and the phase of the plasma generated from the capacitively coupled plasma (CCP) generator 172. Is detected. The first and second phase detectors 150 and 160 output from the inductively coupled plasma (ICP) generator 171 and the capacitively coupled plasma (CCP) generator 172. After converting the phase of the radio frequency into a digital signal, high-speed digital signal processing. The data generated in this process is transmitted to the phase controller 180. In addition, each of the first and second phase detectors 150 and 160 detects radio frequency power applied to the plasma chamber, couples a source signal, and then detects a signal without distortion. The first and second phase detectors have a strip line type or a triodal core type. In addition, the first and second phase detectors have a built-in band pass filter for passing a predetermined band.

The at least one phase detector may detect a phase by using a result output from the first matcher among the at least one matcher and a phase of the plasma generated by the inductively coupled plasma generator, and detect a phase of the at least one matcher. The phase is detected by using the result output from the matching unit and the phase of the plasma generated in the capacitively coupled plasma generator.

In addition, the plasma generator 170 may not only include the inductively coupled plasma generator 171 and the capacitively coupled plasma generator 172, but may also include another plasma generator (not shown). In the plasma generator 170, the inductively coupled plasma generator 171 is a device to which first power is applied, and the capacitively coupled plasma generator 172 is a device to which second power is applied. The plasma generating unit 170 may include a device having a plurality of the same frequency in order to improve the etch or deposition rate of all the Etcher, sputter, CVD equipment.

The phase controller 180 controls the phases output from the inductively coupled plasma generator 171 and the capacitively coupled plasma generator 172. The phase controller 180 is an active phase shifter and is an active phase shifter having channel expandability when a plurality of powers are applied. That is, the phase controller 180 is a phase of the plasma output from the inductively coupled plasma generator 171 and the capacitively coupled plasma generator 172 and the phases input from the first and second phase detectors 150 and 160. Analyze and displace the phase. That is, the phases detected by the first and second phase detectors 150 and 160 are matched with the reference values, using the phases of the radio frequencies output from the first and second high output RF generators 110 and 120 as reference values. .

In addition, the phase controller 180 is a device that enables the phase of each channel to be 360 ⁰ variable. The structure of the phase controller 180 includes a 13.56 MHz phase shifter IC for a multi-channel and a gain amplifier due to RF loss.

The phase control unit 180 will be described later in more detail with reference to FIG. 2.

An RF plasma system controlling different phases according to an embodiment of the present invention synchronizes frequency generators in the system. That is, each high frequency generator is designated as a slave through the phase controller 180 which is a master clock.

As such, the phase difference between the sources is generated according to the impedance of each source or the characteristics of the processing gas. In this case, the first and second phase detectors 150 and 160 read the respective phases and convert the phases into digital values. The phase controller 180 transmits the result. The phase controller 180 analyzes each phase by synchronizing each phase detector and controls the phase variable 360 ⁰ to be in phase. That is, the phase is controlled until the phase becomes in phase. And when it is in phase, the variable stops. Since the feed pack loop is formed, phase compensation is automatically performed when the phase is changed by an external factor.

2 is a detailed block diagram of a phase controller for controlling phase in a plasma system according to an exemplary embodiment of the present invention.

As shown in FIG. 2, the phase controller for controlling the phase in the plasma system according to the embodiment includes a frequency generator 210, a phase shifter 220, an output port 230, and a phase shift signal processor. 240.

The frequency generator 210 is a device that generates a frequency inside the phase controller 180. Each of the first and second high power RF generators 110 and 120 has a frequency generator and has a frequency error. In addition, the high output RF generator needs to correct the phase again when it is turned off due to external causes. In this case, the frequency generator in the frequency generator 210 becomes a master, and the remaining generators have a slave structure in which a frequency is generated from the generator. That is, the phase of the radio frequency output from the high output RF generator changes due to ON / OFF of the power source. In this case, the frequency generator 210 refers to its phase. By doing so, when all the high output radio frequency generators are set to slaves, the inner frequency generator of the frequency generator 210 is turned off. The phase shift unit 220 is connected to the output port unit 230 and displaces the phase. In addition, the output port unit 230 constitutes at least one output port, and when a plurality of radio frequency powers are required, the output port unit 230 is configured as a power output port for supplying power to each slave. The phase shift signal processor 240 connected to the frequency generator 210 and the phase shifter 220 synchronizes the signals received by the first and second phase detectors 150 and 160 and stores phase data. The phase is shifted to compensate for the difference. The phase shift signal processor 240 displays phase information, analyzes a phase, and performs an A / D converting function. After the signal processing is performed on the phase information received by the first and second phase detectors 150 and 160 through A / D converting, the phase controller is controlled using D / A converting to a phase not affected by interference. . The structure of the phase shift signal processor 240 includes an MCU, a 16-bit ADC, a DAC, and a RAM.

3 is a flowchart illustrating a method of controlling different phases in an RF plasma system according to an embodiment of the present invention.

Hereinafter, a method of controlling different phases in an RF plasma system according to an embodiment of the present invention will be described in detail with reference to FIG. 3.

At least one high output radio frequency is generated (S310). As such, the phases of the generated high power radio frequencies may be the same. And, each generated high power radio frequency is matched.

In operation S312, the plasma generating apparatus generates at least one plasma. The plasma generator includes at least one plasma generator. For example, an inductively coupled plasma (ICP) generator and a capacitively coupled plasma (CCP) generator are included. This is merely an embodiment, and the present invention may include more plasma generating devices. And, the phases of the plasma generated in each plasma generating apparatus may be the same or different from each other. When at least one plasma is generated, a phase of the generated at least one plasma is detected (S314). Since the impedance of the plasma generating device is different, the phase is changed. At this time, each plasma phase is detected by a different phase detector. In phase detection, each phase detection unit detects using the phase of the corresponding high output radio frequency. When the phase is detected, the detected phase is converted into a digital signal, and then a high speed digital signal processing process is performed. That is, after detecting the radio frequency power applied from the plasma generating device and coupling the source signal, the signal without distortion is detected.

When the at least one plasma phase is detected, the detected at least one plasma phase is matched with a reference phase (S316). The reference phase is a phase value of high output radio frequency. In more detail, each frequency generator may have a frequency error, which is mainly caused by an external cause or by ON / OFF of a power supply. In this case, the phase must be corrected. In phase correction, the frequency generator becomes the master and the phase generator corrects the phase with the remaining generators as slaves.

One embodiment of the present invention may also be embodied in the form of a recording medium including instructions executable by a computer, such as program modules, being executed by a computer. Computer readable media can be any available media that can be accessed by a computer and includes both volatile and nonvolatile media, removable and non-removable media. In addition, the computer-readable medium may include both computer storage media and communication media. Computer storage media includes both volatile and nonvolatile, removable and non-removable media implemented in any method or technology for storage of information such as computer readable instructions, data structures, program modules or other data. Communication media typically includes any information delivery media, including computer readable instructions, data structures, program modules, or other data in a modulated data signal such as a carrier wave, or other transport mechanism.

The foregoing description of the present invention is intended for illustration, and it will be understood by those skilled in the art that the present invention may be easily modified in other specific forms without changing the technical spirit or essential features of the present invention. will be. It is therefore to be understood that the above-described embodiments are illustrative in all aspects and not restrictive. For example, each component described as a single entity may be distributed and implemented, and components described as being distributed may also be implemented in a combined form.

While the invention has been shown and described with reference to certain preferred embodiments thereof, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention. Therefore, the scope of the present invention should not be limited by the illustrated embodiments, but should be determined by the scope of the appended claims and equivalents thereof.

The scope of the present invention is defined by the appended claims rather than the detailed description and all changes or modifications derived from the meaning and scope of the claims and their equivalents are to be construed as being included within the scope of the present invention do.

110 and 120: first and second high power RF generator 130: first RF matching unit
170: Plasma generating part
171: Inductively Coupled Plasma (ICP) Generator
150: first phase detection unit 140: second RF matching unit
172: Capacitively Coupled Plasma (CCP) Generator
160: second phase detection unit 180: phase control unit

Claims (16)

In a radio frequency (RF) plasma system that controls different phases,
At least one high output radio frequency generator for generating a high output radio frequency;
A plasma generator for generating at least one plasma;
At least one phase detector for detecting a phase of the generated at least one plasma;
And a phase controller configured to correct the phase by displacing the detected at least one plasma phase to a phase of the generated at least one high output radio frequency.
The method of claim 1, wherein the phase control unit
The RF plasma system for correcting the detected plasma phase by using the phase of the radio frequency output from the high output radio frequency generator as a reference value.
The method of claim 1, wherein the phase control unit
A frequency generator for generating an internal frequency;
A phase shift unit for shifting a phase of the generated internal frequency;
An output port unit connected to the phase shift unit and configured to include at least one power output port for supplying power to each slave when a plurality of radio frequency powers are required;
And a phase shift processor for shifting a phase of the signal received from the at least one phase detector to synchronize a phase difference.
The method of claim 3, wherein the phase shift processing unit
The RF plasma system of the signal received from the at least one phase detector to display phase information, analyze the phase, and perform A / D conversion.
The method of claim 1, wherein the at least one phase detector
The at least one plasma phase is detected using the generated at least one plasma and the generated high power radio frequency.
2. The RF plasma system of claim 1 comprising at least one matcher for matching the generated high power radio frequency.
The method of claim 1, wherein the plasma generating unit
An RF plasma system comprising a device for generating an inductively coupled plasma and a device for generating a capacitively coupled plasma.
The method of claim 7, wherein the at least one phase detection unit
The phase is detected by using the result output from the first matching unit among the at least one matching unit and the phase of the plasma generated by the inductively coupled plasma generator, and output from the second matching unit among the at least one matching unit. RF plasma system for detecting the phase by using the result and the phase of the plasma generated in the capacitively coupled plasma generating device.
The method of claim 1, wherein the phase control unit
And a phase variable by 360 ⁰ of each channel input from the at least one phase detector.
In a method for controlling different phases in a radio frequency (RF) plasma system,
Generating at least one high power radio frequency;
Generating at least one plasma,
Detecting a phase of the generated at least one plasma;
And correcting the phase by displacing the detected at least one plasma phase to a phase of the generated at least one high output radio frequency.
The method of claim 10, wherein the phase correction process
And controlling different phases of correcting the detected plasma phase by using the generated at least one phase of the high power radio frequency as a reference value.
The method of claim 10, wherein the phase correction process
Generating an internal frequency in the RF plasma system;
A first process of shifting a phase of the generated internal frequency;
And a second process of displacing the detected at least one plasma phase to synchronize the difference in phase of the detected at least one plasma.
The method of claim 12, wherein the second process is
Analyzing and displaying the detected at least one plasma phase, and performing A / D converting.
The method of claim 10, wherein the detecting process
And controlling the different phases of detecting the at least one plasma phase using the generated at least one plasma and the generated high power radio frequency.
The method of claim 10, further comprising: matching at least one matching unit with the generated high power radio frequency.
The method of claim 15, wherein the detecting process
Detecting a phase using a result output from a first matching unit of the at least one matching unit and a phase of the inductively coupled plasma among the generated at least one plasma;
And detecting a phase by using a result output from a second matching unit of the at least one matching unit and a phase of the capacitively coupled plasma among the generated at least one plasma.

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