KR20130068759A - Texture etching solution composition and texture etching method of crystalline silicon wafers - Google Patents
Texture etching solution composition and texture etching method of crystalline silicon wafers Download PDFInfo
- Publication number
- KR20130068759A KR20130068759A KR1020110136112A KR20110136112A KR20130068759A KR 20130068759 A KR20130068759 A KR 20130068759A KR 1020110136112 A KR1020110136112 A KR 1020110136112A KR 20110136112 A KR20110136112 A KR 20110136112A KR 20130068759 A KR20130068759 A KR 20130068759A
- Authority
- KR
- South Korea
- Prior art keywords
- texture
- acid
- compound
- composition
- silicon wafer
- Prior art date
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 83
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 66
- 238000005530 etching Methods 0.000 title claims description 93
- 238000000034 method Methods 0.000 title claims description 35
- 235000012431 wafers Nutrition 0.000 title description 80
- -1 hydrogen alkali metal Chemical class 0.000 claims abstract description 61
- 239000002253 acid Substances 0.000 claims abstract description 31
- 229920000642 polymer Polymers 0.000 claims abstract description 27
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 10
- 239000001257 hydrogen Substances 0.000 claims abstract description 10
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 9
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims abstract description 7
- 229910052783 alkali metal Inorganic materials 0.000 claims abstract description 5
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims abstract description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-O ammonium group Chemical group [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims abstract description 5
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 78
- 239000007788 liquid Substances 0.000 claims description 42
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 32
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 26
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 21
- 150000001875 compounds Chemical class 0.000 claims description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 18
- 239000008119 colloidal silica Substances 0.000 claims description 16
- 150000001923 cyclic compounds Chemical class 0.000 claims description 15
- 239000006185 dispersion Substances 0.000 claims description 15
- 125000004432 carbon atom Chemical group C* 0.000 claims description 12
- 239000000377 silicon dioxide Substances 0.000 claims description 12
- 239000004094 surface-active agent Substances 0.000 claims description 11
- 239000003513 alkali Substances 0.000 claims description 10
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 claims description 9
- 238000009835 boiling Methods 0.000 claims description 9
- 229920002554 vinyl polymer Polymers 0.000 claims description 9
- 239000000178 monomer Substances 0.000 claims description 7
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 claims description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 claims description 6
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 claims description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 5
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 5
- 229910052731 fluorine Inorganic materials 0.000 claims description 5
- 239000011737 fluorine Substances 0.000 claims description 5
- 239000011734 sodium Substances 0.000 claims description 5
- 239000004115 Sodium Silicate Substances 0.000 claims description 4
- 150000001340 alkali metals Chemical class 0.000 claims description 4
- 150000001342 alkaline earth metals Chemical class 0.000 claims description 4
- 125000005210 alkyl ammonium group Chemical group 0.000 claims description 4
- 235000019441 ethanol Nutrition 0.000 claims description 4
- 239000011976 maleic acid Substances 0.000 claims description 4
- 239000000843 powder Substances 0.000 claims description 4
- 150000003839 salts Chemical class 0.000 claims description 4
- 229910052911 sodium silicate Inorganic materials 0.000 claims description 4
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 claims description 4
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 claims description 3
- FEWLGASICNTXOZ-UHFFFAOYSA-N 2-aminoethane-1,1,1,2-tetrol Chemical compound NC(O)C(O)(O)O FEWLGASICNTXOZ-UHFFFAOYSA-N 0.000 claims description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 3
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 claims description 3
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 claims description 3
- 239000004111 Potassium silicate Substances 0.000 claims description 3
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 3
- 239000000908 ammonium hydroxide Substances 0.000 claims description 3
- HNEGQIOMVPPMNR-IHWYPQMZSA-N citraconic acid Chemical compound OC(=O)C(/C)=C\C(O)=O HNEGQIOMVPPMNR-IHWYPQMZSA-N 0.000 claims description 3
- 229940018557 citraconic acid Drugs 0.000 claims description 3
- LDHQCZJRKDOVOX-NSCUHMNNSA-N crotonic acid Chemical compound C\C=C\C(O)=O LDHQCZJRKDOVOX-NSCUHMNNSA-N 0.000 claims description 3
- 239000001530 fumaric acid Substances 0.000 claims description 3
- PAZHGORSDKKUPI-UHFFFAOYSA-N lithium metasilicate Chemical compound [Li+].[Li+].[O-][Si]([O-])=O PAZHGORSDKKUPI-UHFFFAOYSA-N 0.000 claims description 3
- 229910052912 lithium silicate Inorganic materials 0.000 claims description 3
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 claims description 3
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 claims description 3
- 239000003960 organic solvent Substances 0.000 claims description 3
- 230000000379 polymerizing effect Effects 0.000 claims description 3
- 229910052913 potassium silicate Inorganic materials 0.000 claims description 3
- NNHHDJVEYQHLHG-UHFFFAOYSA-N potassium silicate Chemical compound [K+].[K+].[O-][Si]([O-])=O NNHHDJVEYQHLHG-UHFFFAOYSA-N 0.000 claims description 3
- 235000019353 potassium silicate Nutrition 0.000 claims description 3
- LDHQCZJRKDOVOX-UHFFFAOYSA-N trans-crotonic acid Natural products CC=CC(O)=O LDHQCZJRKDOVOX-UHFFFAOYSA-N 0.000 claims description 3
- UAXOELSVPTZZQG-UHFFFAOYSA-N trimethyl acrylic acid Chemical compound CC(C)=C(C)C(O)=O UAXOELSVPTZZQG-UHFFFAOYSA-N 0.000 claims description 3
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 3
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 claims description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 2
- PVEOYINWKBTPIZ-UHFFFAOYSA-N but-3-enoic acid Chemical compound OC(=O)CC=C PVEOYINWKBTPIZ-UHFFFAOYSA-N 0.000 claims description 2
- HVAMZGADVCBITI-UHFFFAOYSA-N pent-4-enoic acid Chemical compound OC(=O)CCC=C HVAMZGADVCBITI-UHFFFAOYSA-N 0.000 claims description 2
- 150000003009 phosphonic acids Chemical class 0.000 claims description 2
- 150000003460 sulfonic acids Chemical class 0.000 claims description 2
- 239000000126 substance Substances 0.000 abstract description 4
- 238000010521 absorption reaction Methods 0.000 abstract description 3
- 238000001579 optical reflectometry Methods 0.000 abstract description 2
- 125000000008 (C1-C10) alkyl group Chemical group 0.000 abstract 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 28
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 24
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 20
- 229920002125 Sokalan® Polymers 0.000 description 15
- AHVYPIQETPWLSZ-UHFFFAOYSA-N N-methyl-pyrrolidine Natural products CN1CC=CC1 AHVYPIQETPWLSZ-UHFFFAOYSA-N 0.000 description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 13
- 230000008569 process Effects 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 12
- 101001136034 Homo sapiens Phosphoribosylformylglycinamidine synthase Proteins 0.000 description 11
- 150000005857 PFAS Chemical class 0.000 description 11
- 102100036473 Phosphoribosylformylglycinamidine synthase Human genes 0.000 description 11
- SJRJJKPEHAURKC-UHFFFAOYSA-N N-Methylmorpholine Chemical compound CN1CCOCC1 SJRJJKPEHAURKC-UHFFFAOYSA-N 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 7
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 6
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 239000002798 polar solvent Substances 0.000 description 5
- 238000005507 spraying Methods 0.000 description 5
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 4
- YNAVUWVOSKDBBP-UHFFFAOYSA-N Morpholine Chemical compound C1COCCN1 YNAVUWVOSKDBBP-UHFFFAOYSA-N 0.000 description 4
- GLUUGHFHXGJENI-UHFFFAOYSA-N Piperazine Chemical compound C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- YLQBMQCUIZJEEH-UHFFFAOYSA-N Furan Chemical compound C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 3
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 3
- RWRDLPDLKQPQOW-UHFFFAOYSA-N Pyrrolidine Chemical compound C1CCNC1 RWRDLPDLKQPQOW-UHFFFAOYSA-N 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229920001223 polyethylene glycol Polymers 0.000 description 3
- RXYPXQSKLGGKOL-UHFFFAOYSA-N 1,4-dimethylpiperazine Chemical compound CN1CCN(C)CC1 RXYPXQSKLGGKOL-UHFFFAOYSA-N 0.000 description 2
- PBGPBHYPCGDFEZ-UHFFFAOYSA-N 1-ethenylpiperidin-2-one Chemical compound C=CN1CCCCC1=O PBGPBHYPCGDFEZ-UHFFFAOYSA-N 0.000 description 2
- PAMIQIKDUOTOBW-UHFFFAOYSA-N 1-methylpiperidine Chemical compound CN1CCCCC1 PAMIQIKDUOTOBW-UHFFFAOYSA-N 0.000 description 2
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 2
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 2
- AHLWZBVXSWOPPL-RGYGYFBISA-N 20-deoxy-20-oxophorbol 12-myristate 13-acetate Chemical compound C([C@]1(O)C(=O)C(C)=C[C@H]1[C@@]1(O)[C@H](C)[C@H]2OC(=O)CCCCCCCCCCCCC)C(C=O)=C[C@H]1[C@H]1[C@]2(OC(C)=O)C1(C)C AHLWZBVXSWOPPL-RGYGYFBISA-N 0.000 description 2
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 2
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- RRHGJUQNOFWUDK-UHFFFAOYSA-N Isoprene Chemical compound CC(=C)C=C RRHGJUQNOFWUDK-UHFFFAOYSA-N 0.000 description 2
- JLTDJTHDQAWBAV-UHFFFAOYSA-N N,N-dimethylaniline Chemical compound CN(C)C1=CC=CC=C1 JLTDJTHDQAWBAV-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- OJGMBLNIHDZDGS-UHFFFAOYSA-N N-Ethylaniline Chemical compound CCNC1=CC=CC=C1 OJGMBLNIHDZDGS-UHFFFAOYSA-N 0.000 description 2
- WHNWPMSKXPGLAX-UHFFFAOYSA-N N-Vinyl-2-pyrrolidone Chemical compound C=CN1CCCC1=O WHNWPMSKXPGLAX-UHFFFAOYSA-N 0.000 description 2
- AFBPFSWMIHJQDM-UHFFFAOYSA-N N-methylaniline Chemical compound CNC1=CC=CC=C1 AFBPFSWMIHJQDM-UHFFFAOYSA-N 0.000 description 2
- 229910019142 PO4 Inorganic materials 0.000 description 2
- 241001602688 Pama Species 0.000 description 2
- NQRYJNQNLNOLGT-UHFFFAOYSA-N Piperidine Chemical compound C1CCNCC1 NQRYJNQNLNOLGT-UHFFFAOYSA-N 0.000 description 2
- 239000002202 Polyethylene glycol Substances 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- XXROGKLTLUQVRX-UHFFFAOYSA-N allyl alcohol Chemical compound OCC=C XXROGKLTLUQVRX-UHFFFAOYSA-N 0.000 description 2
- IMUDHTPIFIBORV-UHFFFAOYSA-N aminoethylpiperazine Chemical compound NCCN1CCNCC1 IMUDHTPIFIBORV-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 239000012153 distilled water Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- KWIUHFFTVRNATP-UHFFFAOYSA-N glycine betaine Chemical compound C[N+](C)(C)CC([O-])=O KWIUHFFTVRNATP-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- LCEDQNDDFOCWGG-UHFFFAOYSA-N morpholine-4-carbaldehyde Chemical compound O=CN1CCOCC1 LCEDQNDDFOCWGG-UHFFFAOYSA-N 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 125000005010 perfluoroalkyl group Chemical group 0.000 description 2
- 239000010452 phosphate Substances 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- BSYVTEYKTMYBMK-UHFFFAOYSA-N tetrahydrofurfuryl alcohol Chemical compound OCC1CCCO1 BSYVTEYKTMYBMK-UHFFFAOYSA-N 0.000 description 2
- PUPZLCDOIYMWBV-UHFFFAOYSA-N (+/-)-1,3-Butanediol Chemical compound CC(O)CCO PUPZLCDOIYMWBV-UHFFFAOYSA-N 0.000 description 1
- PCPYTNCQOSFKGG-ONEGZZNKSA-N (1e)-1-chlorobuta-1,3-diene Chemical compound Cl\C=C\C=C PCPYTNCQOSFKGG-ONEGZZNKSA-N 0.000 description 1
- PMJHHCWVYXUKFD-SNAWJCMRSA-N (E)-1,3-pentadiene Chemical compound C\C=C\C=C PMJHHCWVYXUKFD-SNAWJCMRSA-N 0.000 description 1
- CYSGHNMQYZDMIA-UHFFFAOYSA-N 1,3-Dimethyl-2-imidazolidinon Chemical compound CN1CCN(C)C1=O CYSGHNMQYZDMIA-UHFFFAOYSA-N 0.000 description 1
- HUZSCDCNYLZCQH-UHFFFAOYSA-N 1-(2-ethoxyethyl)pyrrolidin-2-one Chemical compound CCOCCN1CCCC1=O HUZSCDCNYLZCQH-UHFFFAOYSA-N 0.000 description 1
- HBAIZGPCSAAFSU-UHFFFAOYSA-N 1-(2-hydroxyethyl)imidazolidin-2-one Chemical compound OCCN1CCNC1=O HBAIZGPCSAAFSU-UHFFFAOYSA-N 0.000 description 1
- WDQFELCEOPFLCZ-UHFFFAOYSA-N 1-(2-hydroxyethyl)pyrrolidin-2-one Chemical compound OCCN1CCCC1=O WDQFELCEOPFLCZ-UHFFFAOYSA-N 0.000 description 1
- QKGBRANQIWBMED-UHFFFAOYSA-N 1-(2-methoxyethyl)pyrrolidin-2-one Chemical compound COCCN1CCCC1=O QKGBRANQIWBMED-UHFFFAOYSA-N 0.000 description 1
- GRKJCXAFYOSNTD-UHFFFAOYSA-N 1-(2-methoxypropyl)pyrrolidin-2-one Chemical compound COC(C)CN1CCCC1=O GRKJCXAFYOSNTD-UHFFFAOYSA-N 0.000 description 1
- DZSVIVLGBJKQAP-UHFFFAOYSA-N 1-(2-methyl-5-propan-2-ylcyclohex-2-en-1-yl)propan-1-one Chemical compound CCC(=O)C1CC(C(C)C)CC=C1C DZSVIVLGBJKQAP-UHFFFAOYSA-N 0.000 description 1
- YVNNRQCAABDUMX-UHFFFAOYSA-N 1-(4-methylpiperazin-1-yl)prop-2-en-1-one Chemical compound CN1CCN(C(=O)C=C)CC1 YVNNRQCAABDUMX-UHFFFAOYSA-N 0.000 description 1
- ZFPGARUNNKGOBB-UHFFFAOYSA-N 1-Ethyl-2-pyrrolidinone Chemical compound CCN1CCCC1=O ZFPGARUNNKGOBB-UHFFFAOYSA-N 0.000 description 1
- PVOAHINGSUIXLS-UHFFFAOYSA-N 1-Methylpiperazine Chemical compound CN1CCNCC1 PVOAHINGSUIXLS-UHFFFAOYSA-N 0.000 description 1
- PWMWNFMRSKOCEY-UHFFFAOYSA-N 1-Phenyl-1,2-ethanediol Chemical compound OCC(O)C1=CC=CC=C1 PWMWNFMRSKOCEY-UHFFFAOYSA-N 0.000 description 1
- LVUQCTGSDJLWCE-UHFFFAOYSA-N 1-benzylpyrrolidin-2-one Chemical compound O=C1CCCN1CC1=CC=CC=C1 LVUQCTGSDJLWCE-UHFFFAOYSA-N 0.000 description 1
- AFCUQBVRWTYGJX-UHFFFAOYSA-N 1-but-3-enylpiperazine Chemical compound C=CCCN1CCNCC1 AFCUQBVRWTYGJX-UHFFFAOYSA-N 0.000 description 1
- IEUDAQVWAJAWHV-UHFFFAOYSA-N 1-but-3-enylpiperidin-2-one Chemical compound C(=C)CCN1C(CCCC1)=O IEUDAQVWAJAWHV-UHFFFAOYSA-N 0.000 description 1
- KNQXLXOGOKJNCS-UHFFFAOYSA-N 1-but-3-enylpyrrolidin-2-one Chemical compound C=CCCN1CCCC1=O KNQXLXOGOKJNCS-UHFFFAOYSA-N 0.000 description 1
- BNXZHVUCNYMNOS-UHFFFAOYSA-N 1-butylpyrrolidin-2-one Chemical compound CCCCN1CCCC1=O BNXZHVUCNYMNOS-UHFFFAOYSA-N 0.000 description 1
- VAXHNWJSQXUXMK-UHFFFAOYSA-N 1-carbazol-9-ylprop-2-en-1-one Chemical compound C1=CC=C2N(C(=O)C=C)C3=CC=CC=C3C2=C1 VAXHNWJSQXUXMK-UHFFFAOYSA-N 0.000 description 1
- GYXLGDUOPAIMNZ-UHFFFAOYSA-N 1-ethenyl-4-methylpiperazine Chemical compound CN1CCN(C=C)CC1 GYXLGDUOPAIMNZ-UHFFFAOYSA-N 0.000 description 1
- DCRYNQTXGUTACA-UHFFFAOYSA-N 1-ethenylpiperazine Chemical compound C=CN1CCNCC1 DCRYNQTXGUTACA-UHFFFAOYSA-N 0.000 description 1
- WGCYRFWNGRMRJA-UHFFFAOYSA-N 1-ethylpiperazine Chemical compound CCN1CCNCC1 WGCYRFWNGRMRJA-UHFFFAOYSA-N 0.000 description 1
- BAWUFGWWCWMUNU-UHFFFAOYSA-N 1-hexylpyrrolidin-2-one Chemical compound CCCCCCN1CCCC1=O BAWUFGWWCWMUNU-UHFFFAOYSA-N 0.000 description 1
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 1
- JTPZTKBRUCILQD-UHFFFAOYSA-N 1-methylimidazolidin-2-one Chemical compound CN1CCNC1=O JTPZTKBRUCILQD-UHFFFAOYSA-N 0.000 description 1
- HUUPVABNAQUEJW-UHFFFAOYSA-N 1-methylpiperidin-4-one Chemical compound CN1CCC(=O)CC1 HUUPVABNAQUEJW-UHFFFAOYSA-N 0.000 description 1
- AVFZOVWCLRSYKC-UHFFFAOYSA-N 1-methylpyrrolidine Chemical compound CN1CCCC1 AVFZOVWCLRSYKC-UHFFFAOYSA-N 0.000 description 1
- KYWXRBNOYGGPIZ-UHFFFAOYSA-N 1-morpholin-4-ylethanone Chemical compound CC(=O)N1CCOCC1 KYWXRBNOYGGPIZ-UHFFFAOYSA-N 0.000 description 1
- XLPJNCYCZORXHG-UHFFFAOYSA-N 1-morpholin-4-ylprop-2-en-1-one Chemical compound C=CC(=O)N1CCOCC1 XLPJNCYCZORXHG-UHFFFAOYSA-N 0.000 description 1
- ZVUAMUKZHFTJGR-UHFFFAOYSA-N 1-piperazin-1-ylprop-2-en-1-one Chemical compound C=CC(=O)N1CCNCC1 ZVUAMUKZHFTJGR-UHFFFAOYSA-N 0.000 description 1
- RYZCLQLQLZXPGE-UHFFFAOYSA-N 1-prop-2-enoylpiperidin-2-one Chemical compound C=CC(=O)N1CCCCC1=O RYZCLQLQLZXPGE-UHFFFAOYSA-N 0.000 description 1
- DGPVNNMFVYYVDF-UHFFFAOYSA-N 1-prop-2-enoylpyrrolidin-2-one Chemical compound C=CC(=O)N1CCCC1=O DGPVNNMFVYYVDF-UHFFFAOYSA-N 0.000 description 1
- ZWAQJGHGPPDZSF-UHFFFAOYSA-N 1-prop-2-enylpiperazine Chemical compound C=CCN1CCNCC1 ZWAQJGHGPPDZSF-UHFFFAOYSA-N 0.000 description 1
- ZOSRRDYQKDGLAU-UHFFFAOYSA-N 1-prop-2-enylpiperidin-2-one Chemical compound C=CCN1CCCCC1=O ZOSRRDYQKDGLAU-UHFFFAOYSA-N 0.000 description 1
- DURRSEGFTCZKMK-UHFFFAOYSA-N 1-prop-2-enylpyrrolidin-2-one Chemical compound C=CCN1CCCC1=O DURRSEGFTCZKMK-UHFFFAOYSA-N 0.000 description 1
- GHELJWBGTIKZQW-UHFFFAOYSA-N 1-propan-2-ylpyrrolidin-2-one Chemical compound CC(C)N1CCCC1=O GHELJWBGTIKZQW-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- KKFDCBRMNNSAAW-UHFFFAOYSA-N 2-(morpholin-4-yl)ethanol Chemical compound OCCN1CCOCC1 KKFDCBRMNNSAAW-UHFFFAOYSA-N 0.000 description 1
- KRNUKKZDGDAWBF-UHFFFAOYSA-N 2-(n-ethyl-n-m-toluidino)ethanol Chemical compound OCCN(CC)C1=CC=CC(C)=C1 KRNUKKZDGDAWBF-UHFFFAOYSA-N 0.000 description 1
- HYVGFUIWHXLVNV-UHFFFAOYSA-N 2-(n-ethylanilino)ethanol Chemical compound OCCN(CC)C1=CC=CC=C1 HYVGFUIWHXLVNV-UHFFFAOYSA-N 0.000 description 1
- KZTWONRVIPPDKH-UHFFFAOYSA-N 2-(piperidin-1-yl)ethanol Chemical compound OCCN1CCCCC1 KZTWONRVIPPDKH-UHFFFAOYSA-N 0.000 description 1
- COBPKKZHLDDMTB-UHFFFAOYSA-N 2-[2-(2-butoxyethoxy)ethoxy]ethanol Chemical compound CCCCOCCOCCOCCO COBPKKZHLDDMTB-UHFFFAOYSA-N 0.000 description 1
- OJPDDQSCZGTACX-UHFFFAOYSA-N 2-[n-(2-hydroxyethyl)anilino]ethanol Chemical compound OCCN(CCO)C1=CC=CC=C1 OJPDDQSCZGTACX-UHFFFAOYSA-N 0.000 description 1
- MWGATWIBSKHFMR-UHFFFAOYSA-N 2-anilinoethanol Chemical compound OCCNC1=CC=CC=C1 MWGATWIBSKHFMR-UHFFFAOYSA-N 0.000 description 1
- VUIWJRYTWUGOOF-UHFFFAOYSA-N 2-ethenoxyethanol Chemical compound OCCOC=C VUIWJRYTWUGOOF-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- BSKHPKMHTQYZBB-UHFFFAOYSA-N 2-methylpyridine Chemical compound CC1=CC=CC=N1 BSKHPKMHTQYZBB-UHFFFAOYSA-N 0.000 description 1
- WFCSWCVEJLETKA-UHFFFAOYSA-N 2-piperazin-1-ylethanol Chemical compound OCCN1CCNCC1 WFCSWCVEJLETKA-UHFFFAOYSA-N 0.000 description 1
- IDWRJRPUIXRFRX-UHFFFAOYSA-N 3,5-dimethylpiperidine Chemical compound CC1CNCC(C)C1 IDWRJRPUIXRFRX-UHFFFAOYSA-N 0.000 description 1
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 description 1
- OFNISBHGPNMTMS-UHFFFAOYSA-N 3-methylideneoxolane-2,5-dione Chemical compound C=C1CC(=O)OC1=O OFNISBHGPNMTMS-UHFFFAOYSA-N 0.000 description 1
- WXVKGHVDWWXBJX-UHFFFAOYSA-N 3-morpholin-4-ylpropanenitrile Chemical compound N#CCCN1CCOCC1 WXVKGHVDWWXBJX-UHFFFAOYSA-N 0.000 description 1
- RCADSGKLHCKKQN-UHFFFAOYSA-N 4-but-3-enylmorpholine Chemical compound C=CCCN1CCOCC1 RCADSGKLHCKKQN-UHFFFAOYSA-N 0.000 description 1
- CFZDMXAOSDDDRT-UHFFFAOYSA-N 4-ethenylmorpholine Chemical compound C=CN1CCOCC1 CFZDMXAOSDDDRT-UHFFFAOYSA-N 0.000 description 1
- HVCNXQOWACZAFN-UHFFFAOYSA-N 4-ethylmorpholine Chemical compound CCN1CCOCC1 HVCNXQOWACZAFN-UHFFFAOYSA-N 0.000 description 1
- FHQRDEDZJIFJAL-UHFFFAOYSA-N 4-phenylmorpholine Chemical compound C1COCCN1C1=CC=CC=C1 FHQRDEDZJIFJAL-UHFFFAOYSA-N 0.000 description 1
- SUSANAYXICMXBL-UHFFFAOYSA-N 4-prop-2-enylmorpholine Chemical compound C=CCN1CCOCC1 SUSANAYXICMXBL-UHFFFAOYSA-N 0.000 description 1
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 1
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GAWIXWVDTYZWAW-UHFFFAOYSA-N C[CH]O Chemical group C[CH]O GAWIXWVDTYZWAW-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- IEPRKVQEAMIZSS-UHFFFAOYSA-N Di-Et ester-Fumaric acid Natural products CCOC(=O)C=CC(=O)OCC IEPRKVQEAMIZSS-UHFFFAOYSA-N 0.000 description 1
- IEPRKVQEAMIZSS-WAYWQWQTSA-N Diethyl maleate Chemical compound CCOC(=O)\C=C/C(=O)OCC IEPRKVQEAMIZSS-WAYWQWQTSA-N 0.000 description 1
- IMROMDMJAWUWLK-UHFFFAOYSA-N Ethenol Chemical compound OC=C IMROMDMJAWUWLK-UHFFFAOYSA-N 0.000 description 1
- KMTRUDSVKNLOMY-UHFFFAOYSA-N Ethylene carbonate Chemical compound O=C1OCCO1 KMTRUDSVKNLOMY-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 241000907681 Morpho Species 0.000 description 1
- MKYBYDHXWVHEJW-UHFFFAOYSA-N N-[1-oxo-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propan-2-yl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(C(C)NC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 MKYBYDHXWVHEJW-UHFFFAOYSA-N 0.000 description 1
- HTLZVHNRZJPSMI-UHFFFAOYSA-N N-ethylpiperidine Chemical compound CCN1CCCCC1 HTLZVHNRZJPSMI-UHFFFAOYSA-N 0.000 description 1
- LFTLOKWAGJYHHR-UHFFFAOYSA-N N-methylmorpholine N-oxide Chemical compound CN1(=O)CCOCC1 LFTLOKWAGJYHHR-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- ACIAHEMYLLBZOI-ZZXKWVIFSA-N Unsaturated alcohol Chemical class CC\C(CO)=C/C ACIAHEMYLLBZOI-ZZXKWVIFSA-N 0.000 description 1
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- 239000001089 [(2R)-oxolan-2-yl]methanol Substances 0.000 description 1
- 150000003926 acrylamides Chemical class 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- XYLMUPLGERFSHI-UHFFFAOYSA-N alpha-Methylstyrene Chemical compound CC(=C)C1=CC=CC=C1 XYLMUPLGERFSHI-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 239000002280 amphoteric surfactant Substances 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 239000003945 anionic surfactant Substances 0.000 description 1
- ZXVOCOLRQJZVBW-UHFFFAOYSA-N azane;ethanol Chemical compound N.CCO ZXVOCOLRQJZVBW-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229960003237 betaine Drugs 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- CDQSJQSWAWPGKG-UHFFFAOYSA-N butane-1,1-diol Chemical compound CCCC(O)O CDQSJQSWAWPGKG-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 150000001716 carbazoles Chemical class 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical group 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 239000003093 cationic surfactant Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- YACLQRRMGMJLJV-UHFFFAOYSA-N chloroprene Chemical compound ClC(=C)C=C YACLQRRMGMJLJV-UHFFFAOYSA-N 0.000 description 1
- 238000001246 colloidal dispersion Methods 0.000 description 1
- 125000000753 cycloalkyl group Chemical group 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- HPNMFZURTQLUMO-UHFFFAOYSA-O diethylammonium Chemical compound CC[NH2+]CC HPNMFZURTQLUMO-UHFFFAOYSA-O 0.000 description 1
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 1
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 1
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- XXBDWLFCJWSEKW-UHFFFAOYSA-N dimethylbenzylamine Chemical compound CN(C)CC1=CC=CC=C1 XXBDWLFCJWSEKW-UHFFFAOYSA-N 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- LIWAQLJGPBVORC-UHFFFAOYSA-N ethylmethylamine Chemical compound CCNC LIWAQLJGPBVORC-UHFFFAOYSA-N 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- ACCCMOQWYVYDOT-UHFFFAOYSA-N hexane-1,1-diol Chemical compound CCCCCC(O)O ACCCMOQWYVYDOT-UHFFFAOYSA-N 0.000 description 1
- OHMBHFSEKCCCBW-UHFFFAOYSA-N hexane-2,5-diol Chemical compound CC(O)CCC(C)O OHMBHFSEKCCCBW-UHFFFAOYSA-N 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 125000004029 hydroxymethyl group Chemical group [H]OC([H])([H])* 0.000 description 1
- AQYSYJUIMQTRMV-UHFFFAOYSA-N hypofluorous acid Chemical compound FO AQYSYJUIMQTRMV-UHFFFAOYSA-N 0.000 description 1
- YAMHXTCMCPHKLN-UHFFFAOYSA-N imidazolidin-2-one Chemical compound O=C1NCCN1 YAMHXTCMCPHKLN-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 125000001972 isopentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 1
- 150000002596 lactones Chemical class 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910001338 liquidmetal Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- FQPSGWSUVKBHSU-UHFFFAOYSA-N methacrylamide Chemical compound CC(=C)C(N)=O FQPSGWSUVKBHSU-UHFFFAOYSA-N 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- BQJCRHHNABKAKU-KBQPJGBKSA-N morphine Chemical compound O([C@H]1[C@H](C=C[C@H]23)O)C4=C5[C@@]12CCN(C)[C@@H]3CC5=CC=C4O BQJCRHHNABKAKU-KBQPJGBKSA-N 0.000 description 1
- YQYUUNRAPYPAPC-UHFFFAOYSA-N n,n-diethyl-2-methylaniline Chemical compound CCN(CC)C1=CC=CC=C1C YQYUUNRAPYPAPC-UHFFFAOYSA-N 0.000 description 1
- RWIVICVCHVMHMU-UHFFFAOYSA-N n-aminoethylmorpholine Chemical compound NCCN1CCOCC1 RWIVICVCHVMHMU-UHFFFAOYSA-N 0.000 description 1
- PZYDAVFRVJXFHS-UHFFFAOYSA-N n-cyclohexyl-2-pyrrolidone Chemical compound O=C1CCCN1C1CCCCC1 PZYDAVFRVJXFHS-UHFFFAOYSA-N 0.000 description 1
- KKFHAJHLJHVUDM-UHFFFAOYSA-N n-vinylcarbazole Chemical compound C1=CC=C2N(C=C)C3=CC=CC=C3C2=C1 KKFHAJHLJHVUDM-UHFFFAOYSA-N 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- XUWHAWMETYGRKB-UHFFFAOYSA-N piperidin-2-one Chemical compound O=C1CCCCN1 XUWHAWMETYGRKB-UHFFFAOYSA-N 0.000 description 1
- PMJHHCWVYXUKFD-UHFFFAOYSA-N piperylene Natural products CC=CC=C PMJHHCWVYXUKFD-UHFFFAOYSA-N 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 229920001444 polymaleic acid Polymers 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- HJWLCRVIBGQPNF-UHFFFAOYSA-N prop-2-enylbenzene Chemical compound C=CCC1=CC=CC=C1 HJWLCRVIBGQPNF-UHFFFAOYSA-N 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- MNCGMVDMOKPCSQ-UHFFFAOYSA-M sodium;2-phenylethenesulfonate Chemical compound [Na+].[O-]S(=O)(=O)C=CC1=CC=CC=C1 MNCGMVDMOKPCSQ-UHFFFAOYSA-M 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- SFXOHDOEOSCUCT-UHFFFAOYSA-N styrene;hydrochloride Chemical compound Cl.C=CC1=CC=CC=C1 SFXOHDOEOSCUCT-UHFFFAOYSA-N 0.000 description 1
- 229940117986 sulfobetaine Drugs 0.000 description 1
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 description 1
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 1
- 150000004992 toluidines Chemical class 0.000 description 1
- STCOOQWBFONSKY-UHFFFAOYSA-N tributyl phosphate Chemical compound CCCCOP(=O)(OCCCC)OCCCC STCOOQWBFONSKY-UHFFFAOYSA-N 0.000 description 1
- DQWPFSLDHJDLRL-UHFFFAOYSA-N triethyl phosphate Chemical compound CCOP(=O)(OCC)OCC DQWPFSLDHJDLRL-UHFFFAOYSA-N 0.000 description 1
- ZMANZCXQSJIPKH-UHFFFAOYSA-O triethylammonium ion Chemical compound CC[NH+](CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-O 0.000 description 1
- JLGLQAWTXXGVEM-UHFFFAOYSA-N triethylene glycol monomethyl ether Chemical compound COCCOCCOCCO JLGLQAWTXXGVEM-UHFFFAOYSA-N 0.000 description 1
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 1
- ZTWTYVWXUKTLCP-UHFFFAOYSA-N vinylphosphonic acid Chemical compound OP(O)(=O)C=C ZTWTYVWXUKTLCP-UHFFFAOYSA-N 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
본 발명은 결정성 실리콘 웨이퍼 표면의 위치별 텍스쳐 품질 편차를 최소화하여 광효율을 높일 수 있는 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법에 관한 것이다.
The present invention relates to a texture etching liquid composition for a crystalline silicon wafer and a texture etching method capable of increasing light efficiency by minimizing a texture quality deviation of a surface of a crystalline silicon wafer.
최근 들어 급속하게 보급되고 있는 태양전지는 차세대 에너지원으로서 클린 에너지인 태양 에너지를 직접 전기로 변환하는 전자 소자로서, 실리콘에 붕소를 첨가한 P형 실리콘 반도체를 기본으로 하여 그 표면에 인을 확산시켜 N형 실리콘 반도체층을 형성시킨 PN 접합 반도체 기판으로 구성되어 있다.Solar cells, which are rapidly spreading in recent years, are electronic devices that directly convert solar energy, which is clean energy, into electricity as a next-generation energy source, and diffuse phosphorus on its surface based on P-type silicon semiconductors containing boron in silicon. It consists of the PN junction semiconductor substrate in which the N type silicon semiconductor layer was formed.
PN 접합에 의해 전계가 형성된 기판에 태양광과 같은 빛을 조사할 경우 반도체 내의 전자(-)와 정공(+)이 여기되어 반도체 내부를 자유로이 이동하는 상태가 되며, 이러한 PN 접합에 의해 생긴 전계에 들어오게 되면 전자(-)는 N형 반도체에, 정공(+)은 P형 반도체에 이르게 된다. P형 반도체와 N형 반도체 표면에 전극을 형성하여 전자를 외부회로로 흐르게 하면 전류가 발생하게 되는데, 이와 같은 원리로 태양 에너지가 전기 에너지로 변환된다. 따라서 태양 에너지의 변환 효율을 높이기 위해서 PN 접합 반도체 기판의 단위 면적당 전기적 출력을 극대화시켜야 하며, 이를 위해서 반사율은 낮게 하고 광 흡수량은 최대화시켜야 한다. 이러한 점을 고려하여 PN 접합 반도체 기판을 구성하는 태양전지용 실리콘 웨이퍼의 표면을 미세 피라미드 구조로 형성시키고 반사 방지막을 처리하고 있다. 미세 피라미드 구조로 텍스쳐링된 실리콘 웨이퍼의 표면은 넓은 파장대를 갖는 입사광의 반사율을 낮춰 기 흡수된 광의 강도를 증가시킴으로써 태양전지의 성능, 즉 효율을 높일 수 있게 된다.When light such as sunlight is irradiated onto a substrate on which an electric field is formed by a PN junction, electrons (-) and holes (+) in the semiconductor are excited to move freely inside the semiconductor, and the electric field generated by the PN junction Upon entering, electrons (-) reach the N-type semiconductor and holes (+) reach the P-type semiconductor. When electrodes are formed on the surfaces of the P-type semiconductor and the N-type semiconductor to flow electrons to an external circuit, current is generated. Solar energy is converted into electrical energy based on the same principle. Therefore, in order to increase the conversion efficiency of solar energy, the electrical output per unit area of the PN junction semiconductor substrate should be maximized. For this purpose, the reflectance should be low and the light absorption amount should be maximized. In view of this point, the surface of the solar cell silicon wafer constituting the PN junction semiconductor substrate is formed into a fine pyramid structure and the antireflection film is treated. The surface of the silicon wafer textured with the fine pyramid structure increases the intensity of the light absorbed by lowering the reflectance of incident light having a wide wavelength band, thereby improving the performance of the solar cell.
실리콘 웨이퍼 표면을 미세 피라미드 구조로 텍스쳐하는 방법으로, 미국특허 제4,137,123호에는 0-75부피%의 에틸렌글리콜, 0.05-50중량%의 수산화칼륨 및 잔량의 물을 포함하는 이방성 에칭액에 0.5-10중량%의 실리콘이 용해된 실리콘 텍스쳐 에칭액이 개시되어 있다. 그러나, 이 에칭액은 피라미드 형성 불량을 일으켜 광 반사율을 증가시키고 효율의 저하를 초래할 수 있다.As a method of texturing a silicon wafer surface with a fine pyramid structure, U.S. Patent No. 4,137,123 discloses 0.5-10 weight in an anisotropic etching solution containing 0-75% by volume of ethylene glycol, 0.05-50% by weight of potassium hydroxide and the remaining amount of water. A silicon texture etching solution in which% silicon is dissolved is disclosed. However, this etchant can cause pyramid formation defects to increase the light reflectance and cause a decrease in efficiency.
또한, 유럽특허 제0477424호에는 에틸렌글리콜, 수산화칼륨 및 잔량의 물에 실리콘을 용해시킨 텍스쳐 에칭액에 산소를 공급시키는, 즉 에어레이팅 공정을 수행하는 텍스쳐 에칭 방법이 개시되어 있다. 그러나, 이 에칭 방법은 피라미드 형성 불량을 일으켜 광 반사율 증가와 효율의 저하를 초래할 뿐만 아니라 별도의 에어레이팅 장비의 설치를 필요로 한다는 단점이 있다.In addition, European Patent No. 0477424 discloses a texture etching method of supplying oxygen to a texture etching solution in which silicon is dissolved in ethylene glycol, potassium hydroxide and residual water, that is, performing an air rating process. However, this etching method has a disadvantage in that it causes poor pyramid formation, which leads to an increase in light reflectivity and a decrease in efficiency, and requires the installation of a separate air rating equipment.
또한, 한국등록특허 제0180621호에는 수산화칼륨 용액 0.5-5%, 이소프로필알코올 3-20부피%, 탈이온수 75-96.5부피%의 비율로 혼합된 텍스쳐 에칭 용액이 개시되어 있고, 미국특허 제6,451,218호에는 알칼리 화합물, 이소프로필알코올, 수용성 알카리성 에틸렌글리콜 및 물을 포함하는 텍스쳐 에칭 용액이 개시되어 있다. 그러나, 이들 에칭 용액은 비점이 낮은 이소프로필알코올을 포함하고 있어 텍스쳐 공정 중 이를 추가 투입해야 하므로 생산성 및 비용 면에서 경제적이지 못하며, 추가 투입된 이소프로필알코올로 인해 에칭액의 온도 구배가 발생하여 실리콘 웨이퍼 표면의 위치별 텍스쳐 품질 편차가 커져 균일성이 떨어질 수 있다.
In addition, Korean Patent No. 0180621 discloses a texture etching solution mixed at a ratio of 0.5-5% potassium hydroxide solution, 3-20% by volume of isopropyl alcohol, and 75-96.5% by volume of deionized water, US Patent No. 6,451,218 No. discloses a texture etching solution comprising an alkali compound, isopropyl alcohol, a water soluble alkaline ethylene glycol and water. However, since these etching solutions contain isopropyl alcohol having a low boiling point and need to be added during the texturing process, it is not economical in terms of productivity and cost, and the addition of isopropyl alcohol causes a temperature gradient of the etching solution, resulting in the surface of the silicon wafer. The texture quality variation of each position may increase, resulting in poor uniformity.
본 발명은 결정성 실리콘 웨이퍼의 표면에 미세 피라미드 구조를 형성함에 있어서 위치별 텍스쳐의 품질 편차를 최소화하여 광 효율을 증가시키고, 반사율을 저감시킬 수 있는 텍스쳐를 형성할 수 있는 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물을 제공하는 것을 목적으로 한다.In the present invention, in forming a fine pyramid structure on the surface of a crystalline silicon wafer, a texture of a crystalline silicon wafer capable of forming a texture capable of increasing light efficiency and reducing reflectance by minimizing the quality variation of the texture at each location is reduced. It is an object to provide an etching liquid composition.
또한, 본 발명은 에칭 공정 중 별도의 에칭액 성분의 투입과 에어레이팅 공정의 적용이 필요 없는 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물을 제공하는 것을 목적으로 한다.In addition, an object of the present invention is to provide a texture etching liquid composition of a crystalline silicon wafer that does not require the addition of a separate etching liquid component and the application of an air rating process during the etching process.
또한, 본 발명은 상기 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물을 이용한 텍스쳐 에칭방법을 제공하는 것을 다른 목적으로 한다.
Another object of the present invention is to provide a texture etching method using the texture etching liquid composition of the crystalline silicon wafer.
1. 폴리카르복시산계 고분자를 포함하는 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물.1. Texture etching liquid composition of crystalline silicon wafer containing polycarboxylic acid type polymer.
2. 위 1에 있어서, 폴리카르복시산계 고분자는 하기 화학식 1로 표시되는 반복단위를 포함하는 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물:2. In the above 1, wherein the polycarboxylic acid-based polymer is a texture etching solution composition of the crystalline silicon wafer comprising a repeating unit represented by the following formula (1):
(식 중, R1, R2 및 R3는 서로 독립적으로 수소, 탄소수 1 내지 5인 알킬기, 또는 -(CH2)m2COOM2이며, M1 및 M2는 서로 독립적으로 수소, 알칼리 금속, 알칼리 토금속, 암모늄기, 또는 히드록시기로 치환가능한 탄소수 1 내지 10의 알킬암모늄기이며, m1 및 m2는 서로 독립적으로 0 내지 2인 정수임).Wherein R 1 , R 2 and R 3 are independently of each other hydrogen, an alkyl group having 1 to 5 carbon atoms, or — (CH 2 ) m 2 COOM 2 , and M 1 and M 2 are independently of each other hydrogen, an alkali metal , An alkylammonium group having 1 to 10 carbon atoms which may be substituted with an alkaline earth metal, an ammonium group, or a hydroxy group, m 1 and m 2 are each independently an integer of 0 to 2).
3. 위 1에 있어서, 폴리카르복시산계 고분자는 아크릴산, 메틸(메타)아크릴산, 에틸(메타)아크릴산, 트리메틸아크릴산, 말레산, 푸마르산, 이타콘산, 크로톤산, 시트라콘산, 비닐초산, 4-펜텐산 및 이들의 염으로 이루어진 군에서 선택되는 적어도 1종의 단량체를 중합하여 형성되는 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물.3. In the above 1, the polycarboxylic acid-based polymer is acrylic acid, methyl (meth) acrylic acid, ethyl (meth) acrylic acid, trimethyl acrylic acid, maleic acid, fumaric acid, itaconic acid, crotonic acid, citraconic acid, vinyl acetate, 4-pen Texture etching liquid composition of a crystalline silicon wafer formed by polymerizing at least one monomer selected from the group consisting of tenic acid and salts thereof.
4. 위 3에 있어서, 상기 단량체는 아미드계 화합물, 방향족비닐계 화합물, 불포화카르복시산에스테르계 화합물, 불포화무수카르복시산계 화합물, 불포화알콜계 화합물, 비이온성기 부가 불포화카르복시산에스테르계 화합물, 히드록시기함유 (메타)아크릴산에스테르계 화합물, 비닐시안계 화합물, 지방족 디엔계 화합물, 할로겐화 비닐계 화합물, 술폰산계 화합물 및 포스폰산계 화합물 이루어진 군에서 선택되는 적어도 1종의 공단량체와 공중합하여 폴리카르복시산계 고분자를 형성하는 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물.4. In the above 3, the monomer is an amide compound, an aromatic vinyl compound, an unsaturated carboxylic acid ester compound, an unsaturated anhydride carboxylic acid compound, an unsaturated alcohol compound, a nonionic group addition unsaturated carboxylic acid ester compound, containing a hydroxyl group (meta A polycarboxylic acid polymer is formed by copolymerizing with at least one comonomer selected from the group consisting of an acrylic acid ester compound, a vinyl cyan compound, an aliphatic diene compound, a vinyl halide compound, a sulfonic acid compound and a phosphonic acid compound. Texture etching liquid composition of crystalline silicon wafer.
5. 위 1에 있어서, 폴리카르복시산계 고분자는 중량평균 분자량이 10,000 내지 50,000인 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물.5. In the above 1, the polycarboxylic acid-based polymer has a weight average molecular weight of 10,000 to 50,000 texture etching liquid composition of the crystalline silicon wafer.
6. 위 1에 있어서, 폴리카르복시산계 고분자는 조성물 총 중량 대비 0.1 내지 20중량%인 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물.6. In the above 1, wherein the polycarboxylic acid-based polymer is 0.1 to 20% by weight of the texture etching solution composition of the crystalline silicon wafer relative to the total weight of the composition.
7. 위 1에 있어서, 알칼리 화합물을 더 포함하는 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물.7. according to the above 1, the texture etching liquid composition of the crystalline silicon wafer further comprising an alkali compound.
8. 위 7에 있어서, 알칼리 화합물은 수산화칼륨, 수산화나트륨, 수산화암모늄, 테트라히드록시메틸암모늄 및 테트라히드록시에틸암모늄으로 이루어진 군으로부터 선택되는 1종 이상인 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물.8. The composition according to the above 7, wherein the alkali compound is at least one selected from the group consisting of potassium hydroxide, sodium hydroxide, ammonium hydroxide, tetrahydroxymethylammonium and tetrahydroxyethylammonium etch silicon.
9. 위 1에 있어서, 고리형 화합물을 더 포함하는 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물.9. according to the above 1, the texture etching liquid composition of the crystalline silicon wafer further comprising a cyclic compound.
10. 위 9에 있어서, 고리형 화합물은 비점이 100℃ 이상인 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물.10. In the above 9, the cyclic compound has a boiling point of 100 ℃ or more texture etching liquid composition of the crystalline silicon wafer.
11. 위 9에 있어서, 고리형 화합물은 한센의 용해도 파라미터가 6 내지 15인 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물.11. The etch compound according to the above 9, wherein the cyclic compound has a solubility parameter of Hansen of 6 to 15.
12. 위 1에 있어서, 불소계 계면활성제를 더 포함하는 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물.12. The texture etching solution composition of crystalline silicon wafer further comprising the fluorine-based surfactant as in 1 above.
13. 위 1에 있어서, 실리카 화합물을 더 포함하는 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물.13. In the above 1, the texture etching liquid composition of the crystalline silicon wafer further comprising a silica compound.
14. 위 13에 있어서, 상기 실리카 화합물은 미분말 실리카; Na2O로 안정화시킨 콜로이드 실리카 분산액; K2O로 안정화시킨 콜로이드 실리카 분산액; 산성액으로 안정화시킨 콜로이드 실리카 분산액; NH3로 안정화시킨 콜로이드 실리카 분산액; 에틸알코올, 프로필알코올, 에틸렌글리콜, 메틸에틸케톤 및 메틸이소부틸케톤으로 이루어진 군으로부터 선택된 1종 이상의 유기용매로 안정화시킨 콜로이드 실리카 분산액; 액상 규산나트륨; 액상 규산칼륨; 및 액상 규산리튬으로 이루어진 군으로부터 선택된 1종 이상인 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물.14. In the above 13, wherein the silica compound is fine powder silica; Colloidal silica dispersion stabilized with Na 2 O; Colloidal silica dispersion stabilized with K 2 O; Colloidal silica dispersion stabilized with acid solution; Colloidal silica dispersion stabilized with NH 3 ; Colloidal silica dispersion stabilized with at least one organic solvent selected from the group consisting of ethyl alcohol, propyl alcohol, ethylene glycol, methyl ethyl ketone and methyl isobutyl ketone; Liquid sodium silicate; Liquid potassium silicate; And a liquid etching silicate composition of at least one crystalline silicon wafer selected from the group consisting of liquid lithium silicate.
15. 위 1 내지 14 중 어느 한 항의 에칭액 조성물에 의한 결정성 실리콘 웨이퍼의 텍스쳐 에칭 방법.15. Texture etching method of the crystalline silicon wafer by the etching solution composition of any one of 1 to 14.
16. 위 15에 있어서, 상기 에칭액 조성물을 50 내지 100℃의 온도에서 30초 내지 60분 동안 분무시키는 것을 포함하는 에칭 방법.16. The etching method according to the above 15, comprising spraying the etching solution composition for 30 seconds to 60 minutes at a temperature of 50 to 100 ℃.
17. 위 15에 있어서, 상기 에칭액 조성물에 상기 웨이퍼를 50 내지 100℃의 온도에서 30초 내지 60분 동안 침적시키는 에칭 방법.
17. The etching method of 15, wherein the etching solution composition is deposited for 30 seconds to 60 minutes at a temperature of 50 to 100 ℃.
본 발명의 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법에 따르면 결정성 실리콘 웨이퍼 표면의 위치별 텍스쳐의 품질 편차를 최소화, 즉 텍스쳐의 균일성을 향상시켜 태양광의 흡수량을 극대화시키고 광 반사율을 낮출 수 있다.According to the texture etching solution composition and the texture etching method of the crystalline silicon wafer of the present invention to minimize the quality variation of the texture of each position on the surface of the crystalline silicon wafer, that is to improve the uniformity of the texture to maximize the amount of absorption of sunlight and lower the light reflectance Can be.
본 발명의 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법에 따르면 에칭액 조성물 사용량 대비 처리되는 실리콘 웨이퍼의 매수를 증가시킬 수 있으며 텍스쳐 공정 중 별도의 에칭액 성분을 투입할 필요가 없고 에어레이팅 장비도 도입할 필요가 없어 품질과 생산성을 향상시킬 수 있고 공정 비용 면에서도 경제적이다.
According to the texture etching liquid composition and the texture etching method of the crystalline silicon wafer of the present invention, it is possible to increase the number of silicon wafers to be processed compared to the amount of the etching liquid composition, and it is not necessary to add a separate etching liquid component during the texturing process and introduce an air rating equipment. There is no need to improve quality and productivity, and it is economical in terms of process cost.
도 1은 실시예 1의 결정성 실리콘 웨이퍼의 텍스쳐용 에칭액 조성물을 이용하여 에칭된 단결정 실리콘 웨이퍼의 텍스쳐를 나타낸 SEM 사진이다.
도 2는 실시예 1의 결정성 실리콘 웨이퍼의 텍스쳐용 에칭액 조성물을 이용하여 에칭된 단결정 실리콘 웨이퍼의 텍스쳐 피라미드 구조를 나타낸 SEM 사진이다.1 is an SEM photograph showing a texture of a single crystal silicon wafer etched using the etching solution composition for a texture of the crystalline silicon wafer of Example 1. Fig.
FIG. 2 is an SEM photograph showing the texture pyramid structure of the single crystal silicon wafer etched using the etching liquid composition for the texture of the crystalline silicon wafer of Example 1. FIG.
본 발명은, 폴리카르복시산계 고분자 및 이의 염을 포함함으로써, 결정성 실리콘 웨이퍼의 표면에 균일한 미세 피라미드 구조를 형성함으로써 광 반사율이 낮은 텍스쳐를 제조할 수 있는 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법에 관한 것이다.
The present invention relates to a texture etching solution composition and texture of a crystalline silicon wafer comprising a polycarboxylic acid-based polymer and salts thereof, thereby forming a uniform fine pyramid structure on the surface of the crystalline silicon wafer to produce a low light reflectance texture. It relates to an etching method.
이하, 본 발명을 구체적으로 설명하도록 한다.Hereinafter, the present invention will be described in detail.
본 발명의 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물은 폴리카르복시산계 고분자를 포함하는 것을 특징으로 한다. The texture etching solution composition of the crystalline silicon wafer of the present invention is characterized in that it comprises a polycarboxylic acid-based polymer.
본 발명에 있어서, 폴리카르복시산계 고분자는 텍스쳐 용액 중 OH- 이온의 활동도를 조절하여 Si100 방향과 Si111 방향의 에칭 속도 차이를 감소시키는 역할을 할 뿐만 아니라 결정성 실리콘 표면의 젖음성을 개선시켜 에칭되어 용해된 수소 버블을 빠르게 떨어뜨림으로써 버블 스틱 현상이 발생하는 것을 방지한다. In the present invention, the polycarboxylic acid-based polymer not only serves to reduce the etching rate difference between the Si 100 direction and the Si 111 direction by controlling the activity of OH - ions in the texture solution, thereby improving the wettability of the crystalline silicon surface. Rapid dropping of the etched and dissolved hydrogen bubbles prevents bubble sticking from occurring.
본 발명에 따른 폴리카르복시산계 고분자는, 카르복시산 작용기를 갖는 고분자라면 적절하게 사용될 수 있으며, 보다 구체적으로는 하기 화학식 1로 표시되는 반복단위를 포함할 수 있다:The polycarboxylic acid-based polymer according to the present invention may be suitably used as long as it is a polymer having a carboxylic acid functional group, and more specifically, may include a repeating unit represented by the following Chemical Formula 1.
[화학식 1][Formula 1]
식 중, R1, R2 및 R3는 서로 독립적으로 수소, 탄소수 1 내지 5인 알킬기, 또는 -(CH2)m2COOM2이며, M1 및 M2는 서로 독립적으로 수소, 알칼리 금속, 알칼리 토금속, 암모늄기, 또는 히드록시기로 치환가능한 탄소수 1 내지 10의 알킬암모늄기이며, m1 및 m2는 서로 독립적으로 0 내지 2인 정수이다.Wherein R 1 , R 2 and R 3 are independently of each other hydrogen, an alkyl group having 1 to 5 carbon atoms, or — (CH 2 ) m 2 COOM 2 , and M 1 and M 2 are independently of each other hydrogen, an alkali metal, An alkylammonium group having 1 to 10 carbon atoms which may be substituted with an alkaline earth metal, an ammonium group, or a hydroxy group, and m 1 and m 2 are each independently an integer of 0 to 2.
상기 식 중에서, 알칼리 금속으로는 나트륨 또는 칼륨이 바람직하고; 알칼리 토금속으로는 마그네슘, 칼슘이 바람직하고; 탄소수 1 내지 10의 알킬암모늄기로는 디메틸암모늄, 메틸에틸암모늄, 디에틸암모늄, 트리메틸암모늄, 트리에틸암모늄, 테트라메틸암모늄 등이 바람직하고, 히드록시기로 치환된 탄소수 1 내지 10의 알킬암모늄기로는 트리에탄올암모늄, 모노에탄올암모늄, 디이소프로판올암모늄 등이 바람직하다.In said formula, sodium or potassium is preferable as alkali metal; As alkaline earth metal, magnesium and calcium are preferable; The alkylammonium group having 1 to 10 carbon atoms is preferably dimethyl ammonium, methylethylammonium, diethylammonium, trimethylammonium, triethylammonium, tetramethylammonium, and the like. , Monoethanol ammonium, diisopropanol ammonium, etc. are preferable.
본 발명에 따른 폴리카르복시산계 고분자는 상기 반복단위를 형성할 수 있는 단량체를 중합하여 형성될 수 있으며, 예를 들면 아크릴산, 메틸(메타)아크릴산, 에틸(메타)아크릴산, 트리메틸아크릴산, 말레산, 푸마르산, 이타콘산, 크로톤산, 시트라콘산, 비닐초산, 4-펜텐산 및 이들의 염 등의 단량체를 각각 단독으로 또는 2종 이상 혼합하여 중합하여 형성될 수 있으며, 그에 따라 단일 중합체(homopolymer) 또는 공중합체(copolymer)일 수 있다. The polycarboxylic acid-based polymer according to the present invention may be formed by polymerizing a monomer capable of forming the repeating unit, for example acrylic acid, methyl (meth) acrylic acid, ethyl (meth) acrylic acid, trimethyl acrylic acid, maleic acid, fumaric acid , Monomers such as itaconic acid, crotonic acid, citraconic acid, vinyl acetic acid, 4-pentenoic acid, and salts thereof may be formed by polymerization alone or by mixing two or more kinds thereof, and thus a homopolymer or It may be a copolymer.
선택적으로, 전술한 단량체는 아크릴아미드, 메타크릴아미드, 탄소수 1 내지 5인 알킬(메타)아크릴아미드 등의 아미드계 화합물; 스티렌, 알파-메틸스티렌, 비닐톨루엔, 염화스티렌 등의 방향족비닐계 화합물; 메틸(메타)아크릴레이트, 에틸(메타)아크릴레이트, 프로필(메타)아크릴레이트, n-아밀(메타)아크릴레이트, 이소아밀(메타)아크릴레이트, 헥실(메타)아크릴레이트, 에틸헥실(메타)아크릴레이트, 옥틸(메타)아크릴레이트, 말레산디에틸, 이타콘산디메틸, (폴리)에틸렌글리콜모노(메타)아크릴레이트, (폴리)프로필렌글리콜모노(메타)아크릴레이트, (폴리)부틸렌글리콜모노(메타)아크릴레이트, (폴리)스티렌글리콜모노(메타)아크릴레이트 등의 불포화카르복시산에스테르계 화합물; 무수말레인, 무수이타콘산등의 불포화무수카르복시산계 화합물; 비닐알콜, 알릴알콜, 메틸비닐알콜, 에틸비닐알콜, 비닐글리콜산등의 불포화알콜계 화합물: 폴리에틸렌옥사이드부가(메타)아크릴레이트 등의 비이온성기 부가 불포화카르복시산에스테르계 화합물; 하이드록시메틸(메타)아크릴레이트, 하이드록시에틸(메타)아크릴레이트, 하이드록시프로필(메타)아크릴레이트, 폴리에틸렌글리콜모노(메타)아크릴레이트, 폴리프로필렌글리콜모노(메타)아크릴레이트, 글리세롤모노(메타)아크릴레이트, 글리세롤디(메타)아크릴레이트, 폴리테트라메틸렌글리콜모노(메타)아크릴레이트, 폴리테트라메틸렌글리콜디(메타)아크릴레이트, 부탄디올(메타)아크릴레이트, 헥산디올(메타)아크릴레이트 등의 수산기함유(메타)아크릴산에스테르류; (메타)아크릴로니트릴등의 비닐시안계 화합물; 1,3-부타디엔, 이소프렌, 2.3-디메틸-1,3-부타디엔, 1,3-펜타디엔, 2-클로르-1,3-부타디엔, 1-클로로-1,3-부타디엔등의 지방족 디엔계 화합물; 염화비닐등의 할로겐화 비닐계 화합물; 2-아크릴아미드-2-메틸프로판술폰산, 스티렌술폰산나트륨 등의 술폰산계 화합물; 비닐포스폰산등의 포스폰산계 화합물에서 선택되는 적어도 1종의 공단량체와 공중합되어 본 발명에 따른 폴리카르복시산계 고분자를 형성할 수 있다.Optionally, the aforementioned monomers may be selected from amide compounds such as acrylamide, methacrylamide, alkyl (meth) acrylamides having 1 to 5 carbon atoms; Aromatic vinyl compounds such as styrene, alpha-methylstyrene, vinyltoluene and styrene chloride; Methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, n-amyl (meth) acrylate, isoamyl (meth) acrylate, hexyl (meth) acrylate, ethylhexyl (meth) Acrylate, octyl (meth) acrylate, diethyl maleate, dimethyl itacate, (poly) ethylene glycol mono (meth) acrylate, (poly) propylene glycol mono (meth) acrylate, (poly) butylene glycol mono ( Unsaturated carboxylic acid ester compounds such as meta) acrylate and (poly) styrene glycol mono (meth) acrylate; Unsaturated anhydride carboxylic acid compounds such as maleic anhydride and itaconic anhydride; Unsaturated alcohol compounds such as vinyl alcohol, allyl alcohol, methyl vinyl alcohol, ethyl vinyl alcohol and vinyl glycol acid: nonionic group addition unsaturated carboxylic acid ester compounds such as polyethylene oxide addition (meth) acrylate; Hydroxymethyl (meth) acrylate, hydroxyethyl (meth) acrylate, hydroxypropyl (meth) acrylate, polyethylene glycol mono (meth) acrylate, polypropylene glycol mono (meth) acrylate, glycerol mono (meth) ) Acrylate, glycerol di (meth) acrylate, polytetramethylene glycol mono (meth) acrylate, polytetramethylene glycoldi (meth) acrylate, butanediol (meth) acrylate, hexanediol (meth) acrylate, and the like. Hydroxyl group-containing (meth) acrylic acid esters; Vinyl cyan compounds such as (meth) acrylonitrile; Aliphatic diene compounds such as 1,3-butadiene, isoprene, 2.3-dimethyl-1,3-butadiene, 1,3-pentadiene, 2-chlor-1,3-butadiene, 1-chloro-1,3-butadiene ; Vinyl halide compounds such as vinyl chloride; Sulfonic acid compounds such as 2-acrylamide-2-methylpropanesulfonic acid and sodium styrene sulfonate; It may be copolymerized with at least one comonomer selected from phosphonic acid compounds such as vinyl phosphonic acid to form the polycarboxylic acid polymer according to the present invention.
본 발명에 따른 폴리카르복시산계 고분자는 당업계에 알려진 다양한 중합 방법 중에서 적절한 것을 채택하여 제조될 수 있으며, 제조방법이 특별히 제한되지 않는다.The polycarboxylic acid-based polymer according to the present invention can be prepared by adopting an appropriate one from various polymerization methods known in the art, the production method is not particularly limited.
본 발명에 따른 폴리카르복시산계 고분자는 중량평균 분자량이 10,000 내지 50,000인 것이 바람직하다. 상기 범위의 중량평균 분자량을 갖는 경우에 과에칭을 방지할 수 있는 장점이 있다.The polycarboxylic acid-based polymer according to the present invention preferably has a weight average molecular weight of 10,000 to 50,000. When having a weight average molecular weight in the above range there is an advantage that can prevent over-etching.
본 발명에 따른 폴리카르복시산계 고분자는 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물에 적절한 함량으로 포함될 수 있으며, 예를 들면 조성물 총 중량 대비 0.1 내지 20중량%, 바람직하게는 0.1 내지 5 중량%로 포함될 수 있으나, 이에 한정되는 것은 아니다. 상기 함량 범위에서 균일한 텍스쳐의 형성 효과가 가장 바람직하게 나타난다.The polycarboxylic acid-based polymer according to the present invention may be included in an appropriate amount of the texture etching solution composition of the crystalline silicon wafer, for example, may be included in 0.1 to 20% by weight, preferably 0.1 to 5% by weight relative to the total weight of the composition. It is not limited to this. The effect of forming a uniform texture is most preferred in the above content range.
본 발명에 따른 폴리카르복시산계 고분자는 당분야에서 통상적으로 사용되는 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물에 적용될 수 있다. 결정성 실리콘 웨이퍼는 통상적으로 알칼리 화합물을 포함한다.The polycarboxylic acid-based polymer according to the present invention can be applied to the texture etching solution composition of the crystalline silicon wafer commonly used in the art. Crystalline silicon wafers typically comprise an alkali compound.
본 발명에서 사용되는 알칼리 화합물 결정성 실리콘 웨이퍼의 표면을 에칭하는 성분으로서 당분야에서 통상적으로 사용하는 알칼리 화합물이라면 제한없이 사용될 수 있다. 사용가능한 알칼리 화합물로는 수산화칼륨, 수산화나트륨, 수산화암모늄, 테트라히드록시메틸암모늄, 테트라히드록시에틸암모늄 등을 들 수 있으며, 이 중에서 수산화칼륨, 수산화나트륨이 바람직하다. 이들은 단독 또는 2종 이상 혼합하여 사용할 수 있다.As the component for etching the surface of the alkaline compound crystalline silicon wafer used in the present invention, any alkaline compound commonly used in the art may be used without limitation. Examples of the alkali compound that can be used include potassium hydroxide, sodium hydroxide, ammonium hydroxide, tetrahydroxymethylammonium, tetrahydroxyethylammonium, and the like, with potassium hydroxide and sodium hydroxide being preferred. These can be used individually or in mixture of 2 or more types.
알칼리 화합물은 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 총 중량 대비 0.1 내지 20중량%로 포함되는 것이 바람직하고, 보다 바람직하게는 1 내지 5중량%인 것이 좋다. 함량이 상기 범위에 해당되는 경우 실리콘 웨이퍼 표면을 에칭할 수 있게 된다.The alkali compound is preferably included in an amount of 0.1 to 20% by weight based on the total weight of the texture etching solution composition of the crystalline silicon wafer, more preferably 1 to 5% by weight. When the content falls within the above range, the silicon wafer surface can be etched.
선택적으로, 본 발명의 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물은 고리형 화합물을 더 포함할 수 있다.Optionally, the texture etchant composition of the crystalline silicon wafer of the present invention may further comprise a cyclic compound.
본 발명에 있어서, 고리형 화합물은 바람직하게는 탄소수 4-10의 고리형 탄화수소; 및 N, O 또는 S의 헤테로원자를 1개 이상 포함하는 탄소수 4-10의 헤테로고리형 탄화수소를 포함하는 화합물을 의미하며, 결정성 실리콘 웨이퍼 표면의 젖음성을 개선시켜 알칼리 화합물에 의한 과에칭을 방지함으로써 텍스쳐의 품질 편차를 최소화시키는 동시에 에칭에 의해 생성된 수소 버블의 양을 빠르게 감소시킴으로써 버블 스틱 현상이 발생하는 것도 방지할 수 있는 성분이다. 또한, 비점이 높아 종래 사용되고 있는 이소프로필알코올에 비해 적은 함량으로 사용이 가능할 뿐만 아니라 동일 사용량에 대한 처리 매수도 증가시킬 수 있다.In the present invention, the cyclic compound is preferably a cyclic hydrocarbon having 4-10 carbon atoms; And a heterocyclic hydrocarbon having 4 to 10 carbon atoms including one or more heteroatoms of N, O, or S, and improves the wettability of the surface of the crystalline silicon wafer to prevent overetching by alkali compounds. This minimizes the quality variation of the texture and at the same time rapidly reduces the amount of hydrogen bubbles generated by etching, thereby preventing the occurrence of bubble stick phenomenon. In addition, the boiling point can be used in a small amount compared to isopropyl alcohol is conventionally used as well as increase the number of treatment for the same amount of use.
고리형 화합물은 비점이 100℃ 이상으로 높은 것이 바람직하고, 보다 바람직하게는 100 내지 400℃, 가장 바람직하게는 150 내지 400℃인 것이 좋다. 또한, 고리형 화합물은 한센의 용해도 파라미터(Hansen solubility parameter(HSP), δp)가 6 내지 15인 것이 바람직하다. 상기 범위의 비점과 용해도 파라미터를 갖는 것이 에칭액 조성물에 포함되는 다른 성분들과의 상용성 면에서 바람직하다.It is preferable that a boiling point of a cyclic compound is high as 100 degreeC or more, More preferably, it is 100-400 degreeC, Most preferably, it is 150-400 degreeC. In addition, the cyclic compound preferably has a Hansen solubility parameter (HSP) δp of 6 to 15. Having a boiling point and solubility parameter in the above range is preferable in view of compatibility with other components included in the etching liquid composition.
고리형 화합물은 비점과 한센의 용해도 파라미터를 만족시키는 것이라면 그 종류가 특별히 한정되지 않으며, 예컨대 피페라진계, 모르폴린계, 피리딘계, 피페리딘계, 피페리돈계, 피롤리딘계, 피롤리돈계, 이미다졸리디논계, 퓨란계, 아닐린계, 톨루이딘계, 아민계, 락톤계, 카보네이트계, 카바졸계 화합물 등을 들 수 있다. 구체적인 예로는, 피페라진, N-메틸피페라진, N-에틸피페라진, N-비닐피페라진, N-비닐메틸피페라진, N-비닐에틸피페라진, N-비닐-N'-메틸피페라진, N-아크릴로일피페라진, N-아크릴로일-N'-메틸피페라진, 히드록시에틸피페라진, N-(2-아미노에틸)피페라진, N,N'-디메틸피페라진; 모르폴린, N-메틸모르폴린, N-에틸모르폴린, N-페닐모르폴린, N-비닐모르폴린, N-비닐메틸모르폴린, N-비닐에틸모르폴린, N-아크릴로일모르폴린, N-코코모르폴린, N-(2-아미노에틸)모르폴린, N-(2-시아노에틸)모르폴린, N-(2-히드록시에틸)모르폴린, N-(2-히드록시프로필)모르폴린, N-아세틸모르폴린, N-포밀모르폴린, N-메틸모르폴린-N-옥사이드; 메틸피리딘; N-메틸피페리딘, 3,5-디메틸피페리딘, N-에틸피페리딘, N-(2-히드록시에틸)피페리딘; N-비닐피페리돈, N-비닐메틸피페리돈, N-비닐에틸피페리돈, N-아크릴로일피페리돈, N-메틸-4-피페리돈, N-비닐-2-피페리돈; N-메틸피롤리딘; N-비닐피롤리돈, N-비닐메틸피롤리돈, N-비닐에틸-2-피롤리돈, N-아크릴로일피롤리돈, N-메틸피롤리돈, N-에틸-2-피롤리돈, N-이소프로필-2-피롤리돈, N-부틸-2-피롤리돈, N-t-부틸-2-피롤리돈, N-헥실-2-피롤리돈, N-옥틸-2-피롤리돈, N-벤질-2-피롤리돈, N-시클로헥실-2-피롤리돈, N-비닐-2-피롤리돈, N-(2-히드록시에틸)-2-피롤리돈, N-(2-메톡시에틸)-2-피롤리돈, N-(2-메톡시프로필)-2-피롤리돈, N-(2-에톡시에틸)-2-피롤리돈; N-메틸 이미다졸리디논, 디메틸이미다졸리디논, N-(2-히드록시에틸)-2-이미다졸리디논; 테트라히드로퓨란, 테트라히드로-2-퓨란메탄올; N-메틸아닐린, N-에틸아닐린, N,N-디메틸아닐린, N-(2-히드록시에틸)아닐린, N,N-비스-(2-히드록시에틸)아닐린, N-에틸-N-(2-히드록시에틸)아닐린; N,N-디에틸-o-톨루이딘, N-에틸-N-(2-히드록시에틸)-m-톨루이딘; 디메틸벤질아민; γ-부티로락톤; 에틸렌카보네이트, 프로필렌카보네이트; N-비닐카바졸, N-아크릴로일카바졸 등을 들 수 있으며, 이들은 단독 또는 2종 이상 혼합하여 사용할 수 있다.The cyclic compound is not particularly limited as long as it satisfies the boiling point and the solubility parameter of Hansen. Examples thereof include piperazine, morpholine, pyridine, piperidine, piperidone, pyrrolidine, pyrrolidone, Imidazolidinone type, furan type, aniline type, toluidine type, amine type, lactone type, carbonate type, carbazole type compound, etc. are mentioned. Specific examples include piperazine, N-methylpiperazine, N-ethylpiperazine, N-vinylpiperazine, N-vinylmethylpiperazine, N-vinylethylpiperazine, N-vinyl-N'-methylpiperazine, N-acryloylpiperazine, N-acryloyl-N'-methylpiperazine, hydroxyethylpiperazine, N- (2-aminoethyl) piperazine, N, N'-dimethylpiperazine; Morpholine, N-methylmorpholine, N-ethylmorpholine, N-phenylmorpholine, N-vinylmorpholine, N-vinylmethylmorpholine, N-vinylethylmorpholine, N-acryloylmorpholine, N Cocomorpholine, N- (2-aminoethyl) morpholine, N- (2-cyanoethyl) morpholine, N- (2-hydroxyethyl) morpholine, N- (2-hydroxypropyl) morpho Pauline, N-acetylmorpholine, N-formylmorpholine, N-methylmorpholine-N-oxide; Methylpyridine; N-methylpiperidine, 3,5-dimethylpiperidine, N-ethylpiperidine, N- (2-hydroxyethyl) piperidine; N-vinylpiperidone, N-vinylmethylpiperidone, N-vinylethylpiperidone, N-acryloylpiperidone, N-methyl-4-piperidone, N-vinyl-2-piperidone; N-methylpyrrolidine; N-vinylpyrrolidone, N-vinylmethylpyrrolidone, N-vinylethyl-2-pyrrolidone, N-acryloylpyrrolidone, N-methylpyrrolidone, N-ethyl-2-pyrrolidone , N-isopropyl-2-pyrrolidone, N-butyl-2-pyrrolidone, Nt-butyl-2-pyrrolidone, N-hexyl-2-pyrrolidone, N-octyl-2-pyrroli Don, N-benzyl-2-pyrrolidone, N-cyclohexyl-2-pyrrolidone, N-vinyl-2-pyrrolidone, N- (2-hydroxyethyl) -2-pyrrolidone, N -(2-methoxyethyl) -2-pyrrolidone, N- (2-methoxypropyl) -2-pyrrolidone, N- (2-ethoxyethyl) -2-pyrrolidone; N-methyl imidazolidinone, dimethylimidazolidinone, N- (2-hydroxyethyl) -2-imidazolidinone; Tetrahydrofuran, tetrahydro-2-furanmethanol; N-methylaniline, N-ethylaniline, N, N-dimethylaniline, N- (2-hydroxyethyl) aniline, N, N-bis- (2-hydroxyethyl) aniline, N-ethyl-N- ( 2-hydroxyethyl) aniline; N, N-diethyl-o-toluidine, N-ethyl-N- (2-hydroxyethyl) -m-toluidine; Dimethylbenzylamine; ? -butyrolactone; Ethylene carbonate, propylene carbonate; N-vinyl carbazole, N-acryloyl carbazole, etc. are mentioned, These can be used individually or in mixture of 2 or more types.
고리형 화합물은 조성물 총 중량 대비 0.1 내지 50중량%로 포함되는 것이 바람직하고, 보다 바람직하게는 1 내지 10중량%인 것이 좋다. 함량이 상기 범위에 해당되는 경우 실리콘 웨이퍼 표면의 젖음성을 효과적으로 개선시켜 텍스쳐 품질 편차를 최소화킴으로써 균일성을 향상시킬 수 있다.The cyclic compound is preferably included in 0.1 to 50% by weight, more preferably 1 to 10% by weight relative to the total weight of the composition. If the content falls within the above range, uniformity may be improved by effectively improving the wettability of the silicon wafer surface to minimize texture quality variation.
고리형 화합물은 수용성 극성 용매와 혼합된 것일 수도 있다.The cyclic compound may be mixed with a water soluble polar solvent.
수용성 극성 용매는 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물에 포함되는 다른 성분들 및 물과 상용성이 있는 것이라면 그 종류가 특별히 한정되지 않으며, 양자성 또는 비양자성 극성 용매를 모두 사용할 수 있다.The water-soluble polar solvent is not particularly limited as long as it is compatible with other components and water included in the texture etching solution composition of the crystalline silicon wafer, and both proton or aprotic polar solvents can be used.
양자성 극성 용매로는 에틸렌글리콜모노메틸에테르, 디에틸렌글리콜모노메틸에테르, 트리에틸렌글리콜모노메틸에테르, 폴리에틸렌글리콜모노메틸에테르, 에틸렌글리콜모노에틸에테르, 디에틸렌글리콜모노에틸에테르, 에틸렌글리콜모노부틸에테르, 디에틸렌글리콜모노부틸에테르, 트리에틸렌글리콜모노부틸에테르, 프로필렌글리콜모노메틸에테르, 디프로필렌글리콜모노메틸에테르 등의 에테르계 화합물; 프로판올, 부탄올, 이소프로판올, 테트라하이드로퍼푸릴알코올, 에틸렌글리콜, 프로필렌글리콜 등의 알코올계 화합물 등을 들 수 있으며, 비양자성 극성 용매로는 N-메틸포름아미드, N,N-디메틸포름아미드 등의 아미드계 화합물; 디메틸술폭사이드, 술폴란 등의 술폭사이드계 화합물; 트리에틸포스페이트, 트리부틸포스페이트 등의 포스페이트계 화합물 등을 들 수 있다. 이들은 단독 또는 2종 이상 혼합하여 사용할 수 있다.As a proton polar solvent, ethylene glycol monomethyl ether, diethylene glycol monomethyl ether, triethylene glycol monomethyl ether, polyethylene glycol monomethyl ether, ethylene glycol monoethyl ether, diethylene glycol monoethyl ether, ethylene glycol monobutyl ether Ether compounds such as diethylene glycol monobutyl ether, triethylene glycol monobutyl ether, propylene glycol monomethyl ether and dipropylene glycol monomethyl ether; Alcohol compounds such as propanol, butanol, isopropanol, tetrahydrofurfuryl alcohol, ethylene glycol, propylene glycol, and the like. System compounds; Sulfoxide compounds such as dimethyl sulfoxide and sulfolane; Phosphate type compounds, such as a triethyl phosphate and a tributyl phosphate, etc. are mentioned. These can be used individually or in mixture of 2 or more types.
수용성 극성 용매는 고리형 화합물 총 100중량%에 대하여 0.1 내지 30중량%로 포함될 수 있다.The water soluble polar solvent may be included in an amount of 0.1 to 30% by weight based on 100% by weight of the cyclic compound.
본 발명의 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물은 계면 활성제를 더 포함할 수 있다. 계면 활성제로는 당분야에서 사용되는 계면 활성제가 사용될 수 있으며, 바람직하게는 불소계 계면활성제를 사용할 수 있다. 본 발명에 있어서, 불소계 계면활성제는 텍스쳐 용액의 표면 장력을 낮추어 결정성 실리콘 표면의 젖음성을 개선시켜 주어 알칼리 화합물에 의한 과에칭을 방지하여 주는 역할을 한다.The texture etching solution composition of the crystalline silicon wafer of the present invention may further include a surfactant. As the surfactant, a surfactant used in the art may be used, and preferably a fluorine-based surfactant may be used. In the present invention, the fluorine-based surfactant lowers the surface tension of the texture solution to improve the wettability of the crystalline silicon surface to prevent over-etching by the alkali compound.
불소계 계면 활성제로는 음이온계 계면 활성제류, 양이온계 계면 활성제류, 양쪽성 이온계 계면 활성제류, 비이온계 계면 활성제 등을 들 수 있으며, 이들은 1종 단독으로 또는 2종 이상이 함께 사용될 수 있다. Examples of the fluorine-based surfactants include anionic surfactants, cationic surfactants, amphoteric surfactants, and nonionic surfactants, which may be used alone or in combination of two or more. .
구체적인 예로는 과불소알킬 카르복시산염, 과불소알킬 설폰산염, 과불소알킬 황산염, 불소알킬 인산염과 같은 음이온계; 과불소알킬 아민염, 과불소알킬 4급화 암모늄염과 같은 양이온계; 과불소알킬 카르복시 베타인, 과불소알킬 설포베타인과 같은 양쪽성 이온계; 및 불소화알킬 폴리옥시에틸렌, 과불소알콜 폴리옥시에틸렌과 같은 비이온계 등이 있으며 이들은 1종 단독으로 또는 2종 이상이 함께 사용될 수 있다. 상기 계면활성제에서 알킬기는 탄소수 1 내지 10인 알킬기일 수 있다.Specific examples include anionics such as perfluoroalkyl carboxylate, perfluoroalkyl sulfonate, perfluoroalkyl sulfate, and fluoroalkyl phosphate; Cationic systems such as perfluoroalkyl amine salts and perfluoroalkyl quaternized ammonium salts; Amphoteric ionic systems such as perfluoroalkyl carboxy betaine and perfluoroalkyl sulfobetaine; And nonionics such as fluorinated alkyl polyoxyethylene and perfluoroalcohol polyoxyethylene. These may be used alone or in combination of two or more. The alkyl group in the surfactant may be an alkyl group having 1 to 10 carbon atoms.
계면활성제는 조성물 총 중량 대비 10-6 내지 10 중량%, 바람직하게는 10-4 내지 1중량%로 포함될 수 있다. 함량이 상기 범위에 해당되는 경우 실리콘 웨이퍼 표면의 젖음성을 효과적으로 개선시켜 텍스쳐 품질 편차를 최소화킴으로써 균일성을 향상시킬 수 있다.The surfactant may be included in an amount of 10 -6 to 10% by weight, preferably 10 -4 to 1% by weight based on the total weight of the composition. If the content falls within the above range, uniformity may be improved by effectively improving the wettability of the silicon wafer surface to minimize texture quality variation.
선택적으로, 본 발명의 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물은 실리카 화합물을 더 포함할 수 있다.Optionally, the texture etchant composition of the crystalline silicon wafer of the present invention may further comprise a silica compound.
본 발명에 있어서, 실리카 화합물은 결정성 실리콘 웨이퍼 표면에 물리적으로 흡착하여 일종의 마스크 역할을 함으로써 결정성 실리콘 웨이퍼 표면이 미세 피라미드 형상을 갖도록 하는 성분으로서, 웨이퍼 표면이 균일한 텍스쳐 형상을 갖는데 우수한 효과를 나타낸다.In the present invention, the silica compound is a component that allows the crystalline silicon wafer surface to have a fine pyramid shape by physically adsorbing on the surface of the crystalline silicon wafer to serve as a kind of mask, and has an excellent effect on the uniform surface of the wafer. Indicates.
본 발명에서 사용 가능한 실리카 화합물은, 분말형, 콜로이드 분산액형 또는 액상 규산금속 화합물 등을 들 수 있다. 구체적으로, 미분말 실리카; Na2O로 안정화시킨 콜로이드 실리카 분산액; K2O로 안정화시킨 콜로이드 실리카 분산액; 산성액으로 안정화시킨 콜로이드 실리카 분산액; NH3로 안정화시킨 콜로이드 실리카 분산액; 에틸알코올, 프로필알코올, 에틸렌글리콜, 메틸에틸케톤 및 메틸이소부틸케톤으로 이루어진 군으로부터 선택된 1종 이상의 유기용매로 안정화시킨 콜로이드 실리카 분산액; 액상 규산나트륨; 액상 규산칼륨; 및 액상 규산리튬 등을 예로 들 수 있으며, 이들을 각각 단독으로 또는 2종 이상 혼합하여 사용할 수 있다.As a silica compound which can be used by this invention, a powder type, a colloidal dispersion type, a liquid metal silicate compound, etc. are mentioned. Specifically, fine powder silica; Colloidal silica dispersion stabilized with Na 2 O; Colloidal silica dispersion stabilized with K 2 O; Colloidal silica dispersion stabilized with acid solution; Colloidal silica dispersion stabilized with NH 3 ; Colloidal silica dispersion stabilized with at least one organic solvent selected from the group consisting of ethyl alcohol, propyl alcohol, ethylene glycol, methyl ethyl ketone and methyl isobutyl ketone; Liquid sodium silicate; Liquid potassium silicate; And liquid lithium silicate etc. can be mentioned, These can be used individually or in mixture of 2 or more types, respectively.
실리카 화합물은 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 총 중량 대비 10-5 내지 10 중량%로 포함될 수 있고, 바람직하게는 10-4 내지 1 중량%인 것이 좋다. 함량이 상기 범위에 해당되는 경우 결정성 실리콘 웨이퍼 표면에 미세 피라미드를 용이하게 형성할 수 있다.The silica compound may be included in an amount of 10 −5 to 10 wt% based on the total weight of the texture etching solution composition of the crystalline silicon wafer, and preferably 10 −4 to 1 wt%. If the content falls within the above range, it is possible to easily form a fine pyramid on the surface of the crystalline silicon wafer.
본 발명에 따른 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물은 상기 성분들을 구체적인 필요에 따라 적절하게 채택한 후, 물을 첨가하여 전체 조성을 조절하게 되어 전체 조성물의 잔량은 물이 차지한다. 바람직하게는 상기 성분들이 전술한 함량 범위를 갖도록 조절한다.In the texture etching solution composition of the crystalline silicon wafer according to the present invention, after appropriately adopting the above components according to specific needs, water is added to adjust the overall composition so that the remaining amount of the total composition is occupied by water. Preferably, the components are adjusted to have the aforementioned content ranges.
물의 종류는 특별히 한정되지 않으나, 탈이온 증류수인 것이 바람직하고, 보다 바람직하게는 반도체 공정용 탈이온 증류수로서 비저항값이 18㏁/㎝ 이상인 것이 좋다.Although the kind of water is not specifically limited, It is preferable that it is deionized distilled water, More preferably, it is preferable that the specific resistance value is 18 kW / cm or more as deionized distilled water for a semiconductor process.
상기와 같은 성분을 포함하여 구성되는 본 발명의 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물은, 특히 폴리카르복시산계 갖는 고분자를 포함함으로써 결정성 실리콘 웨이퍼 표면의 위치별 텍스쳐의 품질 편차를 최소화, 즉 텍스쳐의 균일성을 향상시켜 태양광의 흡수량을 극대화시키고 광 반사율을 낮춰 광효율을 높일 수 있다. 또한, 텍스쳐 에칭 공정 중 별도의 에칭액 성분을 투입할 필요가 없고 에어레이팅 장비도 도입할 필요가 없어 생산성과 비용 면에서 이점이 있다.The texture etching solution composition of the crystalline silicon wafer of the present invention comprising the above components, in particular, by including a polymer having a polycarboxylic acid system to minimize the quality variation of the texture by position on the surface of the crystalline silicon wafer, that is, the uniformity of the texture By improving the properties, the absorption of sunlight can be maximized and the light reflectance can be lowered to increase the light efficiency. In addition, there is no need to add a separate etchant component during the texture etching process, and there is no need to introduce an air rating equipment, which is advantageous in terms of productivity and cost.
본 발명의 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물은 통상의 에칭 공정, 예컨대 딥방식, 분무방식 및 매엽방식의 에칭 공정에 모두 적용 가능하다.The texture etching liquid composition of the crystalline silicon wafer of the present invention can be applied to all conventional etching processes, such as dip, spray and single wafer etching processes.
본 발명은 상기 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물을 이용한 결정성 실리콘 웨이퍼의 텍스쳐 에칭방법을 제공한다.The present invention provides a texture etching method of a crystalline silicon wafer using the texture etching liquid composition of the crystalline silicon wafer.
결정성 실리콘 웨이퍼의 텍스쳐 에칭방법은 본 발명의 결정성 실리콘웨이퍼의 텍스쳐 에칭액 조성물에 결정성 실리콘 웨이퍼를 침적시키는 단계, 또는 본 발명의 결정성 실리콘웨이퍼의 텍스쳐 에칭액 조성물을 결정성 실리콘 웨이퍼에 분무하는 단계, 또는 상기 두 단계를 모두 포함한다.The texture etching method of the crystalline silicon wafer may include depositing the crystalline silicon wafer on the texture etching solution composition of the crystalline silicon wafer of the present invention, or spraying the texture etching solution composition of the crystalline silicon wafer of the present invention onto the crystalline silicon wafer. Step, or both.
침적과 분무의 횟수는 특별히 한정되지 않으며, 침적과 분무를 모두 수행하는 경우 그 순서도 한정되지 않는다.The number of depositions and sprays is not particularly limited, and the order of both deposition and spraying is not limited.
침적, 분무 또는 침적 및 분무하는 단계는 50 내지 100℃의 온도에서 30초 내지 60분 동안 수행될 수 있다.Deposition, spraying or depositing and spraying may be performed for 30 seconds to 60 minutes at a temperature of 50 to 100 ° C.
상기한 바와 같은 본 발명의 결정성 실리콘 웨이퍼의 텍스쳐 에칭방법은 산소를 공급시키는 별도의 에어레이팅 장비를 도입할 필요가 없어 초기 생산 및 공정 비용 면에서 경제적일 뿐만 아니라 간단한 공정으로도 균일한 미세 피라미드 구조의 형성을 가능하게 하게 하며, 피라미드의 형상도 경사면이 피라미드 내부로 만입된 구조를 가지게 하여 반사율을 저감시킬 수 있다.As described above, the texture etching method of the crystalline silicon wafer of the present invention does not need to introduce a separate air-rating apparatus for supplying oxygen, so it is economical in terms of initial production and processing costs, and is uniform even in a simple process. It is possible to form the structure, and the shape of the pyramid can also reduce the reflectance by having a structure in which the inclined surface is indented into the pyramid.
이하, 본 발명의 이해를 돕기 위하여 바람직한 실시예를 제시하나, 이들 실시예는 본 발명을 예시하는 것일 뿐 첨부된 특허청구범위를 제한하는 것이 아니며, 본 발명의 범주 및 기술사상 범위 내에서 실시예에 대한 다양한 변경 및 수정이 가능함은 당업자에게 있어서 명백한 것이며, 이러한 변형 및 수정이 첨부된 특허청구범위에 속하는 것도 당연한 것이다.
Hereinafter, preferred examples are provided to aid the understanding of the present invention, but these examples are merely illustrative of the present invention and are not intended to limit the scope of the appended claims. It is apparent to those skilled in the art that various changes and modifications can be made to the present invention, and such modifications and changes belong to the appended claims.
실시예Example 1-15 및 1-15 and 비교예Comparative example 1-4 1-4
하기 표 1에 기재된 성분 및 조성비(중량%)에 잔량의 물을 첨가하여 결정성 실리콘 웨이퍼의 텍스쳐용 에칭액 조성물을 제조하였다.The remaining amount of water was added to the components and composition ratios (wt%) shown in Table 1 below to prepare an etching liquid composition for texture of the crystalline silicon wafer.
화합물alkali
compound
고분자Polycarboxylic acid system
Polymer
화합물Silica
compound
AEPNMP
AEP
0.23.8
0.2
GBLNMP
GBL
0.23.8
0.2
AEPNMM
AEP
0.23.8
0.2
GBLNMM
GBL
0.23.8
0.2
NMP : N-메틸피롤리돈, NMM : N-메틸모폴린,
AEP : 아미노에틸피페라진, GBL : g-부티로락톤,
PAA : 폴리아크릴산, PMA : 폴리말레산,
PAMA : 폴리아크릴-말레산 공중합체, PFAS: 과불소알킬황산염,
PFAP: 과불소알킬인산염(탄소수 1-10인 알킬의 혼합물),
IPA : 이소프로필알코올, EG : 에틸렌글리콜,
MDG : 메틸디글리콜, MEA : 모노에틸아민,
SSS: 액상규산나트륨, SCS: 콜로이드 실리카(Na2O 이용 안정화)
KOH: potassium hydroxide, NaOH: sodium hydroxide,
NMP: N-methylpyrrolidone, NMM: N-methylmorpholine,
AEP: aminoethylpiperazine, GBL: g-butyrolactone,
PAA: polyacrylic acid, PMA: polymaleic acid,
PAMA: Polyacryl-maleic acid copolymer, PFAS: Perfluoroalkyl sulfate
PFAP: perfluoroalkyl phosphate (a mixture of alkyl having 1-10 carbon atoms),
IPA: isopropyl alcohol, EG: ethylene glycol,
MDG: methyldiglycol, MEA: monoethylamine,
SSS: Sodium Silicate Liquid, SCS: Colloidal Silica (Na 2 O stabilized)
실험예Experimental Example
단결정 실리콘 웨이퍼를 실시예 1 내지 실시예 15 및 비교예 1 내지 비교예 4의 결정성 실리콘 웨이퍼의 텍스쳐용 에칭액 조성물에 각각 침지시켜 에칭하였다. 이 때 텍스쳐 조건은 온도 80℃, 시간 20분이었다. The single crystal silicon wafers were immersed in the etching liquid composition for texture of the crystalline silicon wafers of Examples 1 to 15 and Comparative Examples 1 to 4, respectively, to etch. The texture conditions at this time were the temperature of 80 degreeC, and time 20 minutes.
각 조성물로 형성된 텍스쳐의 균일성, 피라미드 평균크기 및 반사율을 측정하였으며, 그 결과를 표 2에 나타내었다.The uniformity, pyramid average size and reflectance of the textures formed from each composition were measured, and the results are shown in Table 2.
텍스쳐 균일성은 육안 평가(디지털 카메라), 광학 현미경, SEM을 이용하고 피라미드 크기는 SEM을 이용하여 평가하였다. Texture uniformity was evaluated using visual evaluation (digital camera), optical microscope, SEM, and pyramid size using SEM.
◎: 웨이퍼 전면 피라미드 형성◎: wafer front pyramid formation
○: 웨이퍼 일부 피라미드 미형성 (피라미드 구조 미형성 정도 5% 미만)○: No pyramid formation on some wafers (less than 5% of pyramid structure formation)
△: 웨이퍼 일부 피라미드 미형성 (피라미드 구조 미형성 정도 5 내지 50% 미만)(Triangle | delta): Unformed part of pyramid of a wafer (Pyramid structure unformed grade less than 5-50%)
Х: 웨이퍼 피라미드 미형성 (피라미드 미형성 정도 50% 이상)Х: no wafer pyramid (more than 50% of pyramid formation)
텍스쳐 반사율은 자외선을 이용하여 400 내지 800㎚의 파장대를 갖는 빛을 조사하였을 때의 평균 반사율을 측정하였다. Texture reflectance measured the average reflectance when irradiating light with a wavelength range of 400-800 nm using ultraviolet-ray.
표 2를 참고하면, 실시예 1 내지 6의 실리콘 웨이퍼의 텍스쳐용 에칭액 조성물은 단결정 실리콘 웨이퍼의 전면에 피라미드를 형성 정도가 매우 우수함을 알 수 있다. 이와 관련하여 도 1에 실시예 1의 결정성 실리콘 웨이퍼의 텍스쳐용 에칭액 조성물을 이용하여 에칭된 단결정 실리콘 웨이퍼의 텍스쳐를 나타낸 SEM 사진을 나타내었으며, 도 2에 실시예 1의 결정성 실리콘 웨이퍼의 텍스쳐용 에칭액 조성물을 이용하여 에칭된 단결정 실리콘 웨이퍼의 텍스쳐 피라미드 구조를 나타낸 SEM 사진을 나타내었다. 도 1 및 도 2를 참고하면, 실리콘 웨이퍼 표면 전체에 걸쳐 텍스쳐가 균일하게 형성되었음을 확인할 수 있다.Referring to Table 2, it can be seen that the etching liquid composition for texture of the silicon wafers of Examples 1 to 6 has a very good degree of pyramid formation on the entire surface of the single crystal silicon wafer. In this regard, FIG. 1 is a SEM photograph showing the texture of a single crystal silicon wafer etched using the etching liquid composition for the texture of the crystalline silicon wafer of Example 1, and the texture of the crystalline silicon wafer of Example 1 in FIG. SEM photographs showing the texture pyramid structure of the single crystal silicon wafer etched using the etchant composition were shown. 1 and 2, it can be seen that the texture is uniformly formed over the entire surface of the silicon wafer.
하지만, 낮은 비점의 IPA를 사용한 비교예 1의 경우에는 텍스쳐 공정 중에 증발로 인한 IPA의 감소를 보충하기 위해 IPA를 지속적으로 투입할 필요가 있었다. 이와 같은 공정 중 투입은 온도 구배를 발생시켰으며, 그에 따라 텍스쳐의 균일성이 저하되었음을 알 수 있다. However, in the case of Comparative Example 1 using a low boiling point IPA, IPA was continuously added to compensate for the reduction of IPA due to evaporation during the texture process. In the process, such an input caused a temperature gradient, and thus, the uniformity of the texture was reduced.
또한, 높은 비점의 EG, MDG를 사용한 비교예 2-3의 경우에도 텍스쳐 균일성, 피라미드 크기, 반사율 측면에서 본 발명의 조성물인 실시예들의 조성물을 사용한 경우보다 전체적으로 열등한 것을 알 수 있다. 그 외에 비교예 4 역시 텍스쳐 균일성, 피라미드 크기, 반사율 측면에서 실시예보다 열등한 효과를 나타내는 것을 알 수 있다.In addition, even in Comparative Example 2-3 using high boiling point EG, MDG it can be seen that the overall inferior in the texture uniformity, pyramid size, reflectance in the case of using the composition of the embodiments of the present invention composition. In addition, Comparative Example 4 also shows an inferior effect than the embodiment in terms of texture uniformity, pyramid size, reflectance.
Claims (17)
Texture etching liquid composition of a crystalline silicon wafer containing a polycarboxylic acid-based polymer.
[화학식 1]
(식 중, R1, R2 및 R3는 서로 독립적으로 수소, 탄소수 1 내지 5인 알킬기, 또는 -(CH2)m2COOM2이며, M1 및 M2는 서로 독립적으로 수소, 알칼리 금속, 알칼리 토금속, 암모늄기, 또는 히드록시기로 치환가능한 탄소수 1 내지 10의 알킬암모늄기이며, m1 및 m2는 서로 독립적으로 0 내지 2인 정수임).
The texture etching solution composition of claim 1, wherein the polycarboxylic acid-based polymer comprises a repeating unit represented by Formula 1 below:
[Formula 1]
Wherein R 1 , R 2 and R 3 are independently of each other hydrogen, an alkyl group having 1 to 5 carbon atoms, or — (CH 2 ) m 2 COOM 2 , and M 1 and M 2 are independently of each other hydrogen, an alkali metal , An alkylammonium group having 1 to 10 carbon atoms which may be substituted with an alkaline earth metal, an ammonium group, or a hydroxy group, m 1 and m 2 are each independently an integer of 0 to 2).
The method of claim 1, wherein the polycarboxylic acid polymer is acrylic acid, methyl (meth) acrylic acid, ethyl (meth) acrylic acid, trimethyl acrylic acid, maleic acid, fumaric acid, itaconic acid, crotonic acid, citraconic acid, vinyl acetic acid, 4-pentenoic acid and Texture etching liquid composition of the crystalline silicon wafer formed by superposing | polymerizing at least 1 sort (s) of monomer chosen from the group which consists of these salts.
The method of claim 3, wherein the monomer is an amide compound, an aromatic vinyl compound, an unsaturated carboxylic acid ester compound, an unsaturated anhydride carboxylic acid compound, an unsaturated alcohol compound, a nonionic group addition unsaturated carboxylic acid ester compound, a hydroxy group-containing (meth) acrylic acid Crystalline to form a polycarboxylic acid polymer by copolymerizing with at least one comonomer selected from the group consisting of ester compounds, vinyl cyan compounds, aliphatic diene compounds, vinyl halide compounds, sulfonic acid compounds and phosphonic acid compounds Texture etching liquid composition of a silicon wafer.
The texture etching solution composition of claim 1, wherein the polycarboxylic acid polymer has a weight average molecular weight of 10,000 to 50,000.
The texture etching solution composition of claim 1, wherein the polycarboxylic acid-based polymer is 0.1 to 20 wt% based on the total weight of the composition.
The texture etching liquid composition of claim 1, further comprising an alkaline compound.
8. The texture etching solution composition of claim 7, wherein the alkali compound is at least one selected from the group consisting of potassium hydroxide, sodium hydroxide, ammonium hydroxide, tetrahydroxymethylammonium and tetrahydroxyethylammonium.
The texture etchant composition of claim 1, further comprising a cyclic compound.
The texture etching solution composition of claim 9, wherein the cyclic compound has a boiling point of 100 ° C. or more.
The texture etchant composition of claim 9, wherein the cyclic compound has a Hansen solubility parameter of 6 to 15. 11.
The texture etching solution composition of claim 1, further comprising a fluorine-based surfactant.
The texture etchant composition of claim 1, further comprising a silica compound.
The method of claim 13, wherein the silica compound is fine powder silica; Colloidal silica dispersion stabilized with Na 2 O; Colloidal silica dispersion stabilized with K 2 O; Colloidal silica dispersion stabilized with acid solution; Colloidal silica dispersion stabilized with NH 3 ; Colloidal silica dispersion stabilized with at least one organic solvent selected from the group consisting of ethyl alcohol, propyl alcohol, ethylene glycol, methyl ethyl ketone and methyl isobutyl ketone; Liquid sodium silicate; Liquid potassium silicate; And a liquid etching silicate composition of at least one crystalline silicon wafer selected from the group consisting of liquid lithium silicate.
The texture etching method of the crystalline silicon wafer by the etching liquid composition of any one of Claims 1-14.
The etching method of claim 15, wherein the etching solution composition is sprayed at a temperature of 50 to 100 ° C. for 30 seconds to 60 minutes.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020110136112A KR20130068759A (en) | 2011-12-16 | 2011-12-16 | Texture etching solution composition and texture etching method of crystalline silicon wafers |
PCT/KR2012/007131 WO2013089338A1 (en) | 2011-12-16 | 2012-09-05 | Texture etching solution composition of a crystalline silicon wafer and texture etching method |
TW101135908A TW201329207A (en) | 2011-12-16 | 2012-09-28 | Texture etching solution composition and texture etching method of crystalline silicon wafers |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020110136112A KR20130068759A (en) | 2011-12-16 | 2011-12-16 | Texture etching solution composition and texture etching method of crystalline silicon wafers |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20130068759A true KR20130068759A (en) | 2013-06-26 |
Family
ID=48612753
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020110136112A KR20130068759A (en) | 2011-12-16 | 2011-12-16 | Texture etching solution composition and texture etching method of crystalline silicon wafers |
Country Status (3)
Country | Link |
---|---|
KR (1) | KR20130068759A (en) |
TW (1) | TW201329207A (en) |
WO (1) | WO2013089338A1 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015020243A1 (en) * | 2013-08-06 | 2015-02-12 | 동우화인켐 주식회사 | Texture-etching solution composition for crystalline silicon wafers and texture-etching method |
WO2015133730A1 (en) * | 2014-03-07 | 2015-09-11 | 동우화인켐 주식회사 | Texture etchant composition for crystalline silicon wafer and texture etching method |
KR20150105122A (en) * | 2014-03-07 | 2015-09-16 | 동우 화인켐 주식회사 | Texture etching solution composition and texture etching method of crystalline silicon wafers |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104342702A (en) * | 2013-08-05 | 2015-02-11 | 南京科乃迪科环保科技有限公司 | Auxiliary chemical composition for monocrystalline silicon or polycrystalline silicon acidic wool making |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090266414A1 (en) * | 2006-05-02 | 2009-10-29 | Mimasu Semiconductor Industry Co., Ltd. | Process for producing semiconductor substrate, semiconductor substrate for solar application and etching solution |
WO2009072438A1 (en) * | 2007-12-04 | 2009-06-11 | Mimasu Semiconductor Industry Co., Ltd. | Process for producing polycrystalline silicon substrate and polycrystalline silicon substrate |
DE102007058829A1 (en) * | 2007-12-06 | 2009-06-10 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Texture and cleaning medium for surface treatment of wafers and their use |
JP5339880B2 (en) * | 2008-12-11 | 2013-11-13 | 株式会社新菱 | Etching solution for silicon substrate and surface processing method for silicon substrate |
DE102009007136A1 (en) * | 2009-02-02 | 2010-08-12 | Sovello Ag | Etching mixture for producing a structured surface on silicon substrates |
KR101219327B1 (en) * | 2009-07-22 | 2013-01-08 | 토요잉크Sc홀딩스주식회사 | Pressure-sensitive adhesive composition for conductive member and laminate using the same |
JP2011256264A (en) * | 2010-06-09 | 2011-12-22 | Toyo Ink Sc Holdings Co Ltd | Adhesive composition and adhesive laminate using the same |
KR101435240B1 (en) * | 2010-10-27 | 2014-08-29 | 주식회사 엘지화학 | Touch panel |
TWI447192B (en) * | 2010-11-24 | 2014-08-01 | Lg Hausys Ltd | Pressure-sensitive adhesive composition for touch panel, pressure-sensitive adhesive film and touch panel |
-
2011
- 2011-12-16 KR KR1020110136112A patent/KR20130068759A/en not_active Application Discontinuation
-
2012
- 2012-09-05 WO PCT/KR2012/007131 patent/WO2013089338A1/en active Application Filing
- 2012-09-28 TW TW101135908A patent/TW201329207A/en unknown
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015020243A1 (en) * | 2013-08-06 | 2015-02-12 | 동우화인켐 주식회사 | Texture-etching solution composition for crystalline silicon wafers and texture-etching method |
WO2015133730A1 (en) * | 2014-03-07 | 2015-09-11 | 동우화인켐 주식회사 | Texture etchant composition for crystalline silicon wafer and texture etching method |
KR20150105122A (en) * | 2014-03-07 | 2015-09-16 | 동우 화인켐 주식회사 | Texture etching solution composition and texture etching method of crystalline silicon wafers |
CN106062132A (en) * | 2014-03-07 | 2016-10-26 | 东友精细化工有限公司 | Texture etchant composition for crystalline silicon wafer and texture etching method |
CN106062132B (en) * | 2014-03-07 | 2018-06-26 | 东友精细化工有限公司 | The texture etchant and texture etching method of crystallinity silicon chip |
Also Published As
Publication number | Publication date |
---|---|
TW201329207A (en) | 2013-07-16 |
WO2013089338A1 (en) | 2013-06-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI573859B (en) | Texture etching solution composition and texture etching method of crystalline silicon wafers (1) | |
CN103314448A (en) | Method for the wet-chemical etching of a highly doped semiconductor layer | |
TWI542664B (en) | Texture etching solution composition and texture etching method of crystalline silicon wafers (2) | |
KR20130068759A (en) | Texture etching solution composition and texture etching method of crystalline silicon wafers | |
KR20150108143A (en) | Texture etching solution composition and texture etching method of crystalline silicon wafers | |
KR20130002258A (en) | Texture etching solution composition and texture etching method of crystalline silicon wafers | |
WO2013100318A1 (en) | Texture etchant composition for crystalline silicon wafer, and texture etching method | |
KR20120078612A (en) | Texture etching solution composition and texture etching method of crystalline silicon wafers | |
KR20120119796A (en) | Texture etching solution composition and texture etching method of crystalline silicon wafers | |
KR20110046992A (en) | An etching solution composition | |
KR101728542B1 (en) | An etching solution composition for molybdenum | |
KR20140082220A (en) | Texture etching solution composition and texture etching method of crystalline silicon wafers | |
KR102122049B1 (en) | Texture etching solution composition and texture etching method of crystalline silicon wafers | |
KR20140082222A (en) | Texture etching solution composition and texture etching method of crystalline silicon wafers | |
KR101804266B1 (en) | Texture etching solution composition and texture etching method of crystalline silicon wafers | |
KR101994084B1 (en) | Texture etching solution composition and texture etching method of crystalline silicon wafers | |
KR20110046308A (en) | Etching liquid composition for texture of crystalline silicon wafer | |
KR101863536B1 (en) | Texture etching solution composition and texture etching method of crystalline silicon wafers | |
KR20150009712A (en) | Texture etching solution composition and texture etching method of crystalline silicon wafers | |
TWI586789B (en) | Texture etching solution composition and texture etching method of crystalline silicon wafers | |
KR20130042851A (en) | Texture etching solution composition and texture etching method of crystalline silicon wafers | |
WO2015020243A1 (en) | Texture-etching solution composition for crystalline silicon wafers and texture-etching method | |
KR20130070515A (en) | Manufacturing method of an array substrate for liquid crystal display |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |