KR20130065479A - Mixture apparatus, silicon carbide granule and fabricating method of silicon carbide granule - Google Patents

Abstract

PURPOSE: A mixing apparatus, silicon carbide granule, and a manufacturing method of the silicon carbide granule are provided to uniformly and constantly maintain purity of the silicon carbide granule by removing all of Teflon or urethane in a drying process. CONSTITUTION: A mixing apparatus comprises a chamber being filled with raw material; a mixing member mixing the raw material; and a vibration member coupled to the chamber. A manufacturing method of a silicon carbide granule comprises a step of manufacturing raw material; a step of putting the raw material into the chamber; a step of mixing the raw material; and a step of drying the raw material. The chamber includes urethane or Teflon. The silicon carbide granule has a purity of 3N to 4N and an average particle diameter(D50) of 60-100 μm.

Description

Mixing apparatus, silicon carbide granules and method for producing silicon carbide granules {MIXTURE APPARATUS, SILICON CARBIDE GRANULE AND FABRICATING METHOD OF SILICON CARBIDE GRANULE}

The present disclosure relates to a mixing apparatus, silicon carbide granules and a method for producing silicon carbide granules.

Silicon carbide has recently been used as a semiconductor material for various electronic devices and purposes. Silicon carbide is particularly useful due to its physical strength and high resistance to chemical attack. Silicon carbide also has radiation hardness, high breakdown filed, relatively wide bandgap, high saturated electron drift velocity, high operating temperature, and spectral blue, violet has excellent electronic properties, including absorption and release of both high energy in the violet and ultraviolet regions.

In a semiconductor process or the like, a substrate or wafer is placed on a susceptor for deposition, etching, and the like. Such a susceptor may be made of silicon carbide having high heat resistance to withstand conditions such as high temperature. A general susceptor is formed by depositing a high purity silicon carbide layer on a body containing graphite.

In order to form a sintered compact formed of silicon carbide, silicon carbide powder (SiC powder), additives, and an organic solvent are effectively stirred to form silicon carbide granules after spray drying, and the silicon carbide sintered compact is manufactured by hot pressing or the like. can do.

In this case, in order to form the silicon carbide granules, the silicon carbide powder, the additive, and the organic solvent are added to a stirring device, and then subjected to a process of mixing in the stirring device. However, during the mixing process, the metal-based material constituting the inner wall of the stirring device may act as an impurity of the silicon carbide granules.

Accordingly, it is possible to reduce the purity of the granules produced after the mixing process, which may also affect the purity of the silicon carbide sintered body formed using the granules.

Accordingly, there is a need for a silicon carbide mixing device and a method for producing silicon carbide granules that can be maintained without degrading the purity of the silicon carbide granules in the mixing process.

Example is a mixing device, silicon carbide granules and silicon carbide granules manufacturing method that can increase the purity of the silicon carbide granules by preventing the reduction of purity when mixing the silicon carbide powder by using the inner material of the mixing device urethane or Teflon To provide.

Mixing apparatus according to the embodiment, the chamber for receiving the raw material; A mixing member for mixing the raw materials in the chamber; And a vibrating member coupled to the chamber.

Silicon carbide granules manufacturing method according to the embodiment comprises the steps of preparing a raw material; Injecting the raw material into a chamber of a mixing device; Mixing the raw materials; And drying the mixed raw material, wherein the chamber comprises urethane or teflon.

The silicon carbide granules according to the embodiment may include silicon carbide particles having a purity of 3N to 4N and an average particle diameter (D50) of 60 μm to 100 μm.

The mixing device according to the embodiment comprises teflon or urethane on the inner wall of the chamber. That is, silicon carbide powder is mixed using the inner wall of Teflon or urethane that is in direct contact with the raw material in the chamber.

Accordingly, compared to the conventional metal-based material acts as an impurity to reduce the purity, Teflon or urethane can be removed by heat treatment in the drying process, so that the silicon carbide granules or the silicon carbide sintered body is constantly reduced without reducing the purity. I can keep it.

In addition, the mixing device according to the embodiment includes a vibration member. Accordingly, the silicon carbide powder precipitated at the bottom of the chamber during the mixing process is raised again and mixed, so that uniform mixing of the silicon carbide powder is possible.

In addition, the method for producing silicon carbide granules according to the embodiment raises the silicon carbide powder to be precipitated by adding a vibration process by the vibration member during the mixing process, thereby enabling uniform mixing of the silicon carbide powder.

In addition, since the chamber inner wall includes Teflon or urethane, it can be kept constant without reducing the purity of the silicon carbide granules or the silicon carbide sintered body.

In addition, the silicon carbide granules according to the embodiment may include silicon carbide particles having high purity and having a narrow average particle diameter distribution.

1 is a schematic view showing a mixing apparatus according to a first embodiment.
2 is a schematic diagram showing a mixing device according to a second embodiment.
3 is a cross-sectional view illustrating a cross section taken along the line AA ′ of FIG. 1.
4 is a cross-sectional view illustrating a cross-section taken along line BB ′ of FIG. 2.
5 is a sectional view showing a mixing device according to a third embodiment.
6 is a sectional view showing a mixing device according to a fourth embodiment.
7 is a scanning electron microscope (SEM) photograph showing the silicon carbide granules according to the comparative example.
8 is a graph illustrating a particle size distribution of silicon carbide granules according to a comparative example.
9 is a scanning electron microscope (SEM) photograph showing the silicon carbide granules according to the embodiment.
10 is a graph showing the particle size distribution of the silicon carbide granules according to the embodiment.
11 is a process flow diagram showing the process flow of the method for producing silicon carbide granules.

In the description of embodiments, each layer, region, pattern, or structure may be “on” or “under” the substrate, each layer, region, pad, or pattern. Substrate formed in ”includes all formed directly or through another layer. Criteria for the top / bottom or bottom / bottom of each layer will be described with reference to the drawings.

The thickness or the size of each layer (film), region, pattern or structure in the drawings may be modified for clarity and convenience of explanation, and thus does not entirely reflect the actual size.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a schematic view of a mixing device according to a first embodiment, FIG. 2 is a schematic view of a mixing device according to a second embodiment, and FIG. 3 is a cross-sectional view taken along line AA ′ of FIG. 1. 4 is a cross-sectional view showing a cross-sectional view of BB 'of FIG.

1 and 4, the mixing apparatus according to the embodiment includes a chamber 10 containing a raw material; A mixing member 20 for mixing the raw materials in the chamber; And a vibrating member 30 coupled to the chamber.

1 and 3, the chamber 10 may have a cylindrical shape. Alternatively, the chamber 10 may have a rectangular shape. However, the embodiment is not limited thereto.

The raw material 40 may be accommodated in the chamber 10. The raw material 40 may include silicon carbide powder, an additive, and an organic solvent.

The lower portion of the chamber may include a raw material 40 supply line 50. The silicon carbide powder, the additive, and the organic solvent may be introduced into the chamber 10 through the raw material 40 supply line 50 and accommodated therein.

The chamber 10 may include teflon or urethane. That is, the material of the chamber 10 may include teflon or urethane. Alternatively, the inner wall of the chamber may be coated by Teflon or urethane.

Conventionally, the chamber included a metal-based material including stainless steel (SUS). However, such stainless steel has a disadvantage of lowering the purity of the silicon carbide powder when the silicon carbide powder contained in the chamber is mixed. That is, when the silicon carbide powder is mixed, the metal-based material including the stainless steel acts as an impurity, thereby reducing the purity of the silicon carbide slurry by mixing, and reducing the purity of the silicon carbide granules and the silicon carbide sintered body manufactured using the same. You can.

Accordingly, in the mixing apparatus according to the present embodiment, the inner wall of the chamber 10 containing the raw material 40 is made of Teflon or urethane or the inner wall of the chamber 10 is coated with Teflon or urethane. It can be kept constant without reducing the purity of the silicon carbide granules according to the metal-based material. In more detail, the teflon or urethane may be removed by heat treatment in a drying process after the mixing process. Thereby, it can be kept constant, without reducing the purity of the silicon carbide granules and silicon carbide sintered compact finally manufactured.

The mixing member 20 may mix the raw material 40 accommodated in the chamber 10. Preferably, the mixing member 20 may include an impeller. The impeller is located at the bottom of the chamber, the raw material 40 accommodated in the chamber 10 by the rotation of the impeller may be mixed with each other.

The impeller may rotate at a speed of 100 rpm to 150 rpm. If the speed is less than 100rpm it may be difficult to mix, and if it exceeds 150rpm, the silicon carbide powder may adhere to the chamber outer wall by centrifugal force, making it difficult to uniformly mix.

The mixing member may comprise teflon or urethane. Unlike the teflon or urethane, all of the metal-based material may be removed by heat treatment in a subsequent drying process. Thus, it can be kept constant without reducing the purity of the final silicon carbide granules.

The mixing device may further comprise a sieve. The sieve 60 may be located above the chamber 10. The sieve 10 may be 100 mesh to 200 mesh.

When the sieve 60 is included, the mixing member 20 may be disposed in the chamber 20 through the sieve. That is, the mixing member 20 and the sieve 60 may be disposed in the chamber 10 by forming a hole through which the mixing member 20 penetrates in the central portion of the sieve 60.

Conventionally, after the raw material mixing, the slurry is passed through a sieve positioned outside the mixing apparatus to produce silicon carbide granules having a desired particle size, thereby increasing the manufacturing process and decreasing the manufacturing efficiency.

Accordingly, the mixing device according to the embodiment can arrange the sieve 60 in the mixing device and produce silicon carbide granules of desired particle size at one time. Accordingly, the manufacturing process can be shortened to improve the manufacturing efficiency.

The vibration member 30 may be coupled to the outside of the chamber. Preferably, the vibration member 30 may be located on an outer lower surface of the chamber. The vibrating member may include a vibrator. However, the vibrating member 30 is not limited thereto, and any vibrating member capable of applying vibration in the chamber may be included.

Silicon carbide powder accommodated in the chamber 10 may be partially deposited at the bottom of the chamber 10 during the mixing process by the mixing member 20. Accordingly, uniform mixing of raw materials in the chamber may not be achieved.

Accordingly, the vibration member 30 is located on the lower surface of the chamber 10 to vibrate the lower surface of the chamber 10, thereby again depositing silicon carbide powder that precipitates on the bottom of the chamber 10. Can be moved to the top surface. Accordingly, the amount of silicon carbide powder that precipitates at the bottom of the chamber 10 can be reduced, and the silicon carbide powder can be uniformly mixed.

2 and 4 show a schematic view and a cross sectional view of a mixing device according to a second embodiment. In the description of the embodiments, reference is made to the description of the preceding mixing device. The description of the foregoing embodiment may be essentially combined with the description of the embodiments, except for the changed part.

2 and 4, the chamber of the mixing apparatus according to the second embodiment includes an outer wall 11 and an inner wall 12. Preferably, the inner wall 12 may include teflon or urethane. In addition, the inner wall 12 may be coated by Teflon or urethane. The outer wall 11 may include a metallic material.

The mixing apparatus according to the second embodiment includes an outer wall 11 and an inner wall 12 of a chamber 10 containing a raw material, and the inner wall 12 may be made of or coated with Teflon or urethane.

Accordingly, since the influence of impurities due to the conventional metal-based material can be reduced, the purity of the silicon carbide granules can be kept constant. That is, since both teflon or urethane can be removed according to the heat treatment in the drying process, the purity of the final silicon carbide granules and the silicon carbide sintered body can be maintained.

5 and 6 show a schematic view and a cross sectional view of a mixing device according to the third and fourth embodiments. In the description of the embodiments, reference is made to the description of the preceding mixing device. The description of the foregoing embodiment may be essentially combined with the description of the embodiments, except for the changed part.

5 and 6, the left and right sides of the chamber 10 of the mixing apparatus according to the fifth and sixth embodiments may include a shape having a constant inclination. In more detail, the left side and the right side of the chamber 10 may form a slope that becomes narrower toward the lower side of the chamber 10.

In addition, the vibration member 30 may be located on an inclined surface of the chamber 10. By forming the inclined surface of the left side and the right side of the chamber, by reducing the area of the lower surface of the chamber 10, it is possible to reduce the precipitation of the silicon carbide powder, the precipitation by the vibration member 30 The silicon carbide powder may be raised again and mixed to allow uniform mixing of the silicon carbide powder.

Hereinafter, the silicon carbide granule production method will be described.

Referring to Figure 11, the silicon carbide granules manufacturing method according to the embodiment comprises the steps of preparing a raw material (ST10); Injecting the raw material into the chamber of the mixing apparatus (ST20); Mixing the raw materials (ST30); And drying the mixed raw material (ST40), and the chamber may include urethane or teflon.

In step ST10 of preparing the raw material, silicon carbide powder may be prepared. Silicon carbide powder may be prepared by mixing a carbon source and a silicon source. The silicon carbide powder may be prepared according to a wet mixing process or a dry mixing process.

Subsequently, in step ST10 of injecting the raw material into the chamber of the mixing apparatus, the silicon carbide powder, the additive, and the organic solvent may be introduced into the chamber of the mixing apparatus. Preferably the additive may be a resin containing carbon. Phenolic resin may be used as the resin. In addition, the organic solvent may be an alcohol or an aqueous material. Examples of the alcohol-based substance include methanol, ethanol, and isopropyl alcohol (IPA), and water may be used as the aqueous substance. However, the embodiment is not limited thereto.

The chamber of the mixing device may comprise Teflon or urethane. More specifically, the material of the chamber of the mixing device may comprise Teflon or urethane. Alternatively, the chamber of the intermixing device may be coated with Teflon or urethane. In addition, the chamber of the mixing device is composed of a double wall of the inner wall and the outer wall material of the inner wall in direct contact with the raw material may include Teflon or urethane. Alternatively, the inner wall may be coated with Teflon or urethane.

As the chamber of the mixing device comprises teflon or urethane, it can be kept constant without reducing the purity of the silicon carbide granules. In more detail, conventionally used stainless steel (SUS) acts as an impurity in mixing to reduce the purity of the silicon carbide granules or silicon carbide sintered body, Teflon or urethane according to the embodiment in the drying process when forming the granules Since all are removed in accordance with the heat treatment, it can be kept constant without reducing the purity of the final silicon carbide granules or silicon carbide sintered body.

Subsequently, in step ST30 of mixing the raw materials, the raw materials introduced into the mixing device may be mixed. The mixing may be mixed by the impeller included in the mixing device. The impeller can be uniformly mixed with the raw material introduced into the mixing device by rotating at a speed of rpm to rpm.

In addition, in the mixing step (ST30), the mixing process can be facilitated by the vibration member coupled to the mixing device. In more detail, the vibration member may be disposed on an outer lower surface of the chamber in which the raw material is accommodated, and by vibrating the lower bottom surface of the chamber, the silicon carbide powder precipitated on the bottom of the chamber may be raised again. Thereby, the said vibration member can raise the efficiency of the said mixing process.

Subsequently, in the step ST40 of mixing the mixed raw materials, the mixed raw materials, that is, the mixed silicon carbide slurry may be dried by spray drying equipment. Preferably the spray drying equipment may use a spray dryer.

In the silicon carbide granule production method according to the embodiment, the chamber of the mixing device for mixing the raw material includes Teflon or urethane. In addition, the vibration member may be located on the outer wall of the chamber. Accordingly, uniform mixing of the silicon carbide particles may be possible.

Hereinafter, the present invention will be described in more detail through the method of preparing silicon carbide granules according to Examples and Comparative Examples. These examples are merely presented to illustrate the invention in more detail, but the present invention is not limited to these embodiments.

Example  One

The synthesized high purity silicon carbide powder, liquid phenolic resin and isopropyl alcohol (IPA) were mixed for 24 hours. At this time, the purity of the silicon carbide powder is 5N7, the liquid phenol resin 400g, isopropyl alcohol was introduced into the chamber of the mixing device of the urethane material at a ratio of 1L and mixed. Also, a vibrator was coupled to the lower outer surface of the chamber.

The mixed silicon carbide slurry was dried by spray drying to produce silicon carbide granules. At this time, the speed of the stirrer was 100 rpm, the temperature of the inlet of the spray dry was 100 ° C., the temperature of the outlet was 60 ° C., the speed of the atomizer was 8000 rpm, and the raw material supply speed was 20 rpm.

Comparative example  One

Silicon carbide granules were prepared in the same manner as in Example 1 except that the chamber material of the mixing device was stainless (SUS) and did not include a vibrator.

The silicon carbide granules prepared according to Example 1 and Comparative Example 1 were measured using a scanning electron microscope (SEM) and a powder particle size analyzer (PSA) to determine the shape, purity, particle size, and particle size distribution of the granules. The results are shown in Table 1 below.

water(%) Particle size distribution Example 1 99.9997 narrowness Comparative Example 1 99 broadness

7 and 8 are photographs and graphs measuring the shape, particle size, and particle size distribution of the silicon carbide granules prepared according to Comparative Example 1, and FIGS. 9 and 10 are views of the silicon carbide granules prepared according to Example 1; It is a photograph and a graph which measured shape, particle size, and particle size distribution.

Referring to FIGS. 7 to 10 and Table 1, the silicon carbide granules prepared according to Example 1 had a uniform particle size distribution and higher purity than the silicon carbide granules prepared according to Comparative Example 1. Able to know.

In particular, it can be seen that the silicon carbide granules prepared in Example 1 produce silicon carbide granules with little change in purity. On the other hand, in the silicon carbide granules produced by Preparation Example 1, it can be seen that the stainless steel of the chamber acts as an impurity to lower the final granularity.

In addition, referring to Table 1 and Figure 10, the silicon carbide granules produced by the production method may include silicon carbide particles having a purity of 3N or more and an average particle diameter (D50) of 60㎛ to 100㎛. Preferably, the silicon carbide granules may comprise silicon carbide particles having a purity of 3N to 4N.

The features, structures, effects and the like described in the foregoing embodiments are included in at least one embodiment of the present invention and are not necessarily limited to one embodiment. In addition, the features, structures, effects, and the like illustrated in the embodiments may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be construed as limiting the scope of the present invention. It can be seen that various modifications and applications are possible. For example, each component specifically shown in the embodiments may be modified. It is to be understood that the present invention may be embodied in many other specific forms without departing from the spirit or essential characteristics thereof.

Claims (14)

A chamber containing the raw material;
A mixing member for mixing the raw materials in the chamber; And
And a vibrating member coupled to the chamber. The method of claim 1,
Said chamber comprising urethane or teflon. The method of claim 1,
The chamber includes an inner wall and an outer wall,
The inner wall of the chamber includes a urethane or teflon. The method of claim 1,
The mixing member includes a urethane or teflon. The method of claim 1,
The vibration member is coupled to a lower surface of the outside of the chamber,
The vibrating member includes a vibrator. The method of claim 1,
A sieve is disposed in the chamber,
The sieve is 100 mesh to 200 mesh mixing device. The method according to claim 6,
The mixing element is disposed in the chamber through the sieve. The method of claim 1,
The raw material is a mixing device containing silicon carbide. Preparing a raw material;
Injecting the raw material into a chamber of a mixing device;
Mixing the raw materials; And
Drying the mixed raw materials,
The chamber is a method for producing silicon carbide granules comprising urethane or teflon. The method of claim 9,
The mixing step includes vibrating the mixing device,
Wherein said vibration is vibrated by a vibrating member including a vibrator. The method of claim 9,
The mixing device is a method for producing silicon carbide granules comprising urethane or teflon. The method of claim 9,
The mixing device includes an inner wall and an outer wall,
The inner wall is a method for producing silicon carbide granules comprising urethane or teflon. The method of claim 9,
The raw material is a silicon carbide granule manufacturing method comprising silicon carbide. Purity is 3N-4N,
Silicon carbide granules comprising silicon carbide particles having an average particle diameter (D50) of 60 μm to 100 μm.

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