KR20130050168A - Graphene nano-mesh, method of fabricating the graphene nano-mesh, and electronic device using the graphene nano-mesh - Google Patents

Graphene nano-mesh, method of fabricating the graphene nano-mesh, and electronic device using the graphene nano-mesh Download PDF

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KR20130050168A
KR20130050168A KR1020110115378A KR20110115378A KR20130050168A KR 20130050168 A KR20130050168 A KR 20130050168A KR 1020110115378 A KR1020110115378 A KR 1020110115378A KR 20110115378 A KR20110115378 A KR 20110115378A KR 20130050168 A KR20130050168 A KR 20130050168A
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South Korea
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mesh
graphene nano
graphene
vacuum filtering
nano
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KR1020110115378A
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Korean (ko)
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고건우
심성현
황성원
손철수
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삼성전자주식회사
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Publication of KR20130050168A publication Critical patent/KR20130050168A/en

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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • C01B32/186—Preparation by chemical vapour deposition [CVD]
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/194—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/147—Semiconductor insulating substrates

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

PURPOSE: A graphene nano-mesh, a manufacturing method thereof and a manufacturing method of electric components using the same are provided to manufacture large area of graphene nano-meshes and to be applied in integration of a device. CONSTITUTION: A manufacturing method of graphene nano-meshes comprises the following steps: forming a graphene layer on a vacuum filtering membrane (11) having multiple air gaps; and forming a graphene nano-mesh (12') having multiple openings (14) by removing a graphene layer region corresponding to a plurality of pores through vacuum filtering. The vacuum filtering membrane comprises cellulose acetate, AAO (Anodized Aluminum Oxide) or PTFE (polytetrafluorothylene).

Description

Graphene nano-mesh, method of fabricating the graphene nano-mesh, and electronic device using the graphene nano-mesh}

The disclosed embodiments relate to electronic devices using graphene nano-meshes, graphene nano-meshes, and graphene nano-meshes, and more particularly to large-scale nano-meshes using vacuum filtering techniques. It relates to a manufacturing method, graphene nano-mesh prepared by the above method, and an electronic device using the graphene nano-mesh.

Graphene is a two-dimensional thin film of honeycomb structure made of a layer of carbon atoms. The carbon atoms form a carbon hexagonal network surface having a two-dimensional structure upon chemical bonding by sp 2 hybrid orbits. The aggregate of carbon atoms with this planar structure is graphene, which is about 0.34 nm thick, with only one carbon atom. Such graphene is structurally and chemically very stable, and has excellent charge mobility about 100 times faster than silicon, and is capable of flowing about 100 times more current than copper. In addition, graphene has excellent transparency, and may have a higher transparency than indium tin oxide (ITO), which is conventionally used as a transparent electrode. Various studies are being conducted to apply graphene to electronic devices using the above characteristics of graphene.

On the other hand, typical graphene that is not doped or patterned has an energy band gap where the conduction band and the valence band meet each other. In order to utilize graphene in various electronic devices, researches are being conducted on graphene having an energy band gap by doping or patterning the graphene in a specific form. For example, patterning graphene in the form of nano-mesh is one way to make graphene have an energy band gap. However, when graphene is chemically treated and patterned in the form of nano-meshes, it is difficult to prepare graphene nano-meshes in large areas. In addition, the use of toxic chemicals may lead to environmental pollution and increase the cost of removing residual chemicals. In addition, graphene may be chemically contaminated or damaged to deteriorate its properties.

A method for producing large area graphene nano-mesh at low cost is provided.

In addition, graphene nano-mesh provided by the above method, and an electronic device using the graphene nano-mesh is provided.

According to one type of the invention, a step of forming a graphene layer on a vacuum filtering membrane having a plurality of pores; And removing a region of the graphene layer corresponding to the plurality of pores through vacuum filtering to form a graphene nano-mesh having a plurality of openings. Can be.

Here, the plurality of pores may be formed through the vacuum filtering membrane up and down.

In addition, the plurality of pores may be arranged regularly at regular intervals.

In addition, the plurality of openings of the graphene nano-mesh may have a size and arrangement shape corresponding to the size and arrangement of the plurality of pores.

For example, the vacuum filtering membrane may be made of cellulose acetate, anodized aluminum oxide (AOA), or polytetrafluorothylene (PTFE).

In one embodiment, the graphene layer may be formed by chemical vapor deposition (CVD) and then transferred onto the vacuum filtering membrane.

In addition, according to another type of the present invention, a graphene nano-mesh formed by the above-described method may be provided.

In addition, according to another type of the invention, forming the graphene nano-mesh by the above-described method; Transferring the graphene nano-mesh onto a substrate; Forming a gate insulating film on an upper surface of the graphene nano-mesh; Forming a gate on the gate insulating film; And forming a source and a drain on both sides of the graphene nano-mesh, respectively.

In one embodiment, transferring the graphene nano-mesh onto a substrate may include pressing the graphene nano-mesh onto a substrate; And removing the vacuum filtering membrane.

Further, according to another type of the invention, a substrate; Graphene nano-mesh disposed on the substrate; A gate insulating layer disposed on the graphene nano-mesh; A gate disposed on the gate insulating film; And a source and a drain disposed on both sides of the graphene nano-mesh, respectively, wherein the graphene nano-mesh is a graphene layer having a plurality of openings regularly arranged at regular intervals. .

According to the disclosed graphene nano-mesh manufacturing method, since the graphene nano-mesh as much as the area of the vacuum filtering membrane can be manufactured, it is possible to produce a large area of graphene nano-mesh. Therefore, when manufacturing an electronic device using the graphene nano-mesh, it is advantageous for the integration of the device.

In addition, according to the disclosed method for producing graphene nano-mesh, since the graphene is patterned using vacuum filtering, it is possible to prevent or reduce the electron mobility decrease due to the contamination of graphene.

Finally, since the graphene nano-mesh manufacturing method disclosed by the present invention to produce the graphene nano-mesh by a mechanical method, it is possible to reduce the possibility of environmental pollution by chemicals.

1A and 1B are schematic plan views and cross-sectional views showing a graphene layer disposed on a vacuum filtering membrane to prepare graphene nano-meshes by vacuum filtering technology, respectively.
2A and 2B are schematic plan and cross-sectional views illustrating graphene nano-meshes formed on vacuum filtering membranes, respectively.
3 to 5 are cross-sectional views schematically illustrating a process of manufacturing an electronic device using graphene nano-mesh.
6 is a schematic cross-sectional view of a plurality of electronic devices manufactured using graphene nano-mesh.

Hereinafter, with reference to the accompanying drawings, a method for producing a large-area nano-mesh by using a vacuum filtering technique, for the graphene nano-mesh prepared by the method, and the electronic device using the graphene nano-mesh It demonstrates in detail. In the following drawings, like reference numerals refer to like elements, and the size of each element in the drawings may be exaggerated for clarity and convenience of explanation.

1A-2B schematically illustrate a method of making graphene nano-mesh by vacuum filtering technique.

First, FIGS. 1A and 1B are schematic plan views and cross-sectional views showing a state in which a graphene layer 12 is disposed on a vacuum filtering membrane 11 to manufacture graphene nano-meshes by vacuum filtering technology, respectively. 1A and 1B, a graphene layer 12 is formed on the surface of the vacuum filtering membrane 11. The vacuum filtering membrane 11 may be made of a porous resin material in which a plurality of pores 13 are formed. For example, the vacuum filtering membrane 11 may be made of a material such as cellulose acetate, anodized aluminum oxide (AOA), polytetrafluorothylene (PTFE), or the like.

The plurality of pores 13 may be formed through the vacuum filtering membrane 11 up and down, as shown in the cross-sectional view of FIG. 1B. In addition, the plurality of voids 13 may be arranged regularly at a predetermined period. In the plan view of FIG. 1A, an example is shown in which a plurality of voids 13 indicated by dotted lines are arranged in the form of a two-dimensional matrix array, but is not limited to this arrangement. In addition, in the plan view of FIG. 1A, the voids 13 are illustrated as being circular, but the shape of the voids 13 is not necessarily limited to the circular shape and may have a polygonal shape. The size of the pores 13, the spacing between the pores 13, the arrangement form of the pores 13 may vary depending on the form of the graphene nano-mesh to be formed later. For example, the size and spacing of the pores 13 can be determined within the range of several to several hundred nm. The plurality of pores 13 may be formed by mechanically or chemically perforating the vacuum filtering membrane 11, or may allow the pores 13 to be naturally formed in the process of forming the vacuum filtering membrane 11. have.

Meanwhile, the graphene layer 12 may be formed by chemical vapor deposition (CVD) technology and then transferred onto the vacuum filtering membrane 11. For example, after placing a catalyst metal such as nickel (Ni) or copper (Cu) inside the quartz tube, H 2 gas and CH 4 gas are injected into the quartz tube at a temperature of about 1000 ° C. In this case, an inert gas such as argon (Ar) or helium (He) may be injected together. Then, carbon may be crystallized on the surface of the catalyst metal such as nickel or copper to form graphene. Then, when the catalyst metal is immersed in the weakly acidic etching solution, only the graphene remains and the catalyst metal may be removed by the etching solution. After the catalyst metal is completely removed, the graphene layer from which the catalyst metal is removed is immersed in ultrapure water (DI water) to sufficiently clean the etchant on the graphene surface. Thereafter, the vacuum filtering membrane 11 is placed in ultrapure water to float the graphene onto the surface of the vacuum filtering membrane 11. Then, as illustrated in FIG. 1A, the graphene layer 12 may be transferred and formed on the surface of the vacuum filtering membrane 11. Thereafter, the remaining etchant may be removed with a washing solution or the like.

As shown in FIGS. 1A and 1B, after forming the graphene layer 12 on the surface of the porous vacuum filtering membrane 11, the vacuum filtering membrane 11 is placed in a vacuum filtering vessel, and then the vacuum filtering technique is applied. The region of the graphene layer corresponding to the plurality of pores 13 may be removed. For example, a vacuum is applied to the lower surface side of the vacuum filtering membrane 11 in the vacuum filtering vessel, and an atmospheric pressure or an atmospheric pressure greater than atmospheric pressure is maintained on the upper surface side. Then, a part of the graphene layer 12 is cut out through the air gap 13 by the pressure difference between the upper and lower portions of the vacuum filtering membrane 11. Accordingly, the graphene nano-mesh may be formed while a plurality of openings corresponding to the plurality of pores 13 are formed in the graphene layer 12.

2A and 2B are schematic plan and cross-sectional views showing graphene nano-mesh 12 'formed on vacuum filtering membrane 11, respectively. 2A and 2B, some regions of the graphene layer 12 corresponding to the plurality of pores 13 of the vacuum filtering membrane 11 are removed, thereby removing the plurality of regular openings 14 from the graphene nano. Mesh 12 ′ was formed on the vacuum filtering membrane 11. Generally, graphene that is not doped or patterned is a conductive material and does not have an energy band gap. However, when the graphene is patterned and manufactured as the graphene nano-mesh 12 ′, the graphene may have an energy band gap depending on the size and the arrangement period of the openings 14. The size and arrangement of these openings 14 may correspond to the size and arrangement of the pores 13.

According to the manufacturing method of the graphene nano-mesh 12 'shown in FIGS. 1A to 2B, since the graphene nano-mesh 12' as large as the area of the vacuum filtering membrane 11 can be manufactured, a large area Graphene nano-mesh (12 ') of the production is possible. Therefore, when the electronic device is manufactured using the graphene nano-mesh 12 ', it is advantageous to integrate the electronic device. In addition, since the graphene nano-mesh 12 'method of manufacturing the patterned graphene layer 12 using a vacuum filtering technology, the graphene nano-mesh (12') patterning of the graphene layer 12 may occur when patterning the graphene layer 12 by a chemical method The reduction in electron mobility due to contamination can be prevented or reduced. In addition, the possibility of environmental pollution by a large amount of chemicals can be reduced.

Since the graphene nano-mesh 12 'thus formed has an energy band gap, it can be used in the manufacture of electronic devices instead of semiconductor materials such as silicon. 3 to 5 are cross-sectional views schematically illustrating a process of manufacturing an electronic device, for example a thin film transistor, using the graphene nano-mesh 12 '.

3 to 5, before manufacturing the electronic device, the graphene nano-mesh 12 ′ on the vacuum filtering membrane 11 may first be transferred onto a suitable substrate for the electronic device. For example, as shown in FIG. 3, the graphene nano-mesh 12 ′ formed on the surface of the vacuum filtering membrane 11 is pressed onto the substrate 20. The substrate 20 may use a material that is particularly excellent in graphene and bonding strength. For example, SiO 2 , glass, polyethylene resin (PET), or the like may be used as the material of the substrate 20. Then, when the vacuum filtering membrane 11 is removed, as shown in FIG. 4, the graphene nano-mesh 12 ′ remains on the substrate 20 having excellent binding force of graphene light.

Thereafter, as shown in FIG. 5, the gate insulating film 21 may be formed on the upper surface of the graphene nano-mesh 12 ′, and the gate 22 may be sequentially formed on the gate insulating film 21. . The source 23 and the drain 24 may be formed on both sides of the graphene nano-mesh 12 ′, respectively. Then, a thin film transistor using graphene nano-mesh 12 'may be completed. The gate insulating layer 21 may be formed of a material such as SiO 2 , SiN x, and the like. The gate 22, the source 23, and the drain 24 may be made of a conductive metal or a conductive metal oxide. Such thin film transistors using graphene nano-mesh 12 'may enable low power and high speed operation due to the excellent electron mobility of graphene.

Only one thin film transistor is shown in FIG. 5 by way of example. However, since the large-area graphene nano-mesh 12 'can be manufactured according to the embodiment disclosed in FIGS. A large number of thin film transistors can be manufactured. For example, FIG. 6 exemplarily illustrates a form in which a plurality of thin film transistors are manufactured by using graphene nano-mesh 12 'as a wafer. Although only thin film transistors are illustrated in FIGS. 3 to 6 by way of example, various electronic devices that may be manufactured using a conventional semiconductor wafer may be manufactured using graphene nano-mesh 12 ′.

Until now, in order to facilitate understanding of the present invention, a method for manufacturing a large-area nano-mesh using vacuum filtering technology, the graphene nano-mesh prepared by the method, and the electronic device using the graphene nano-mesh Exemplary embodiments have been described and illustrated in the accompanying drawings. However, it should be understood that such embodiments are merely illustrative of the invention and do not limit it. And it is to be understood that the invention is not limited to the details shown and described. This is because various other modifications may occur to those skilled in the art.

Vacuum filter membrane 12. Graphene layer
12 '.... graphene nano-mesh 13 ..... voids
14 ..... opening 20 ..... substrate
21 ..... gate insulating film 22 ..... gate
23 ..... source 24 ..... drain

Claims (11)

Forming a graphene layer on the vacuum filtering membrane having a plurality of pores; And
Removing a region of the graphene layer corresponding to the plurality of pores through vacuum filtering to form a graphene nano-mesh having a plurality of openings. The method of claim 1,
The plurality of pores are formed to penetrate the vacuum filtering membrane up and down the manufacturing method of the graphene nano-mesh. The method of claim 2,
The plurality of pores are arranged regularly at regular intervals graphene nano-mesh manufacturing method. The method of claim 3, wherein
The plurality of openings of the graphene nano-mesh has a size and configuration of the graphene nano-mesh corresponding to the size and configuration of the plurality of pores. The method of claim 1,
The vacuum filtering membrane is a method for producing graphene nano-mesh made of cellulose acetate (Cellulose acetate), Anodized Aluminum Oxide (AOA) or polytetrafluorothylene (PTFE). The method of claim 1,
The graphene layer is formed by chemical vapor deposition (CVD) method and the graphene nano-mesh manufacturing method is transferred onto the vacuum filtering membrane. Graphene nano-mesh formed by the method of any one of claims 1 to 6. Forming a graphene nano-mesh by the method of any one of claims 1 to 6;
Transferring the graphene nano-mesh onto a substrate;
Forming a gate insulating film on an upper surface of the graphene nano-mesh;
Forming a gate on the gate insulating film; And
Forming a source and a drain on both sides of the graphene nano-mesh, respectively. The method of claim 8,
Transferring the graphene nano-mesh on a substrate,
Pressing the graphene nano-mesh onto a substrate; And
Removing the vacuum filtering membrane. Board;
Graphene nano-mesh disposed on the substrate;
A gate insulating layer disposed on the graphene nano-mesh;
A gate disposed on the gate insulating film; And
It includes; and source and drain respectively disposed on both sides of the graphene nano-mesh,
The graphene nano-mesh is an electronic device having a graphene layer having a plurality of openings arranged regularly at regular intervals. 11. The method of claim 10,
The graphene nano-mesh is an electronic device formed by the method of any one of claims 1 to 6.
KR1020110115378A 2011-11-07 2011-11-07 Graphene nano-mesh, method of fabricating the graphene nano-mesh, and electronic device using the graphene nano-mesh KR20130050168A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120059022A (en) * 2010-11-30 2012-06-08 삼성전자주식회사 Graphene electronic device
US9595401B1 (en) 2015-09-03 2017-03-14 Samsung Electronics Co., Ltd. Method of fabricating graphene nano-mesh
US11078082B2 (en) 2014-10-31 2021-08-03 Samsung Electronics Co., Ltd. Method of fabricating graphene structure having nanobubbles

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120059022A (en) * 2010-11-30 2012-06-08 삼성전자주식회사 Graphene electronic device
US11078082B2 (en) 2014-10-31 2021-08-03 Samsung Electronics Co., Ltd. Method of fabricating graphene structure having nanobubbles
US9595401B1 (en) 2015-09-03 2017-03-14 Samsung Electronics Co., Ltd. Method of fabricating graphene nano-mesh

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