KR20130031522A - Amplifier for boosting gain and frequency mixer using the same - Google Patents

Amplifier for boosting gain and frequency mixer using the same Download PDF

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Publication number
KR20130031522A
KR20130031522A KR1020110095148A KR20110095148A KR20130031522A KR 20130031522 A KR20130031522 A KR 20130031522A KR 1020110095148 A KR1020110095148 A KR 1020110095148A KR 20110095148 A KR20110095148 A KR 20110095148A KR 20130031522 A KR20130031522 A KR 20130031522A
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KR
South Korea
Prior art keywords
transistor
unit
inductor
frequency mixer
gain
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KR1020110095148A
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Korean (ko)
Inventor
윤태열
이지영
임원규
최승운
Original Assignee
한양대학교 산학협력단
한국항공우주연구원
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Priority to KR1020110095148A priority Critical patent/KR20130031522A/en
Publication of KR20130031522A publication Critical patent/KR20130031522A/en

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/12—Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes
    • H03D7/125—Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes with field effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0017—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier
    • H03G1/0023—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier in emitter-coupled or cascode amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/181—A coil being added in the gate circuit of a FET amplifier stage, e.g. for noise reducing purposes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/216—A coil being added in the input circuit, e.g. base, gate, of an amplifier stage

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

An amplifier boosting gain and a frequency mixer using the same are disclosed. The amplifier includes a first inductor. Here, a bias voltage is input through the first inductor.

Description

AMPLIFIER FOR BOOSTING GAIN AND FREQUENCY MIXER USING THE SAME}

The present invention relates to an amplifier boosting gain and a frequency mixer using the same.

A frequency mixer is a device for converting a frequency of an input signal and is mainly used for converting a frequency of an RF signal input through an antenna in a communication system.

In general, the frequency mixer increases the gain by forming N-MOS transistors in a cascode structure as disclosed in Korean Patent Publication No. 2010-60880. However, such a frequency mixer has a problem that the gain is improved but the noise is increased.

In addition, the gain of the frequency mixer is generally about 12 kHz, which does not meet the latest technology requiring high gain.

Therefore, a frequency mixer capable of realizing high gain without increasing noise is required.

The present invention provides an amplifier and a frequency mixer using the same to achieve low noise and high gain.

In order to achieve the above object, an amplifier according to an embodiment of the present invention includes a first inductor. Here, a bias voltage is input through the first inductor.

According to another embodiment of the present invention, a frequency mixer includes: an input unit having a first transistor; A switching unit having a second transistor and a third transistor; An output unit connected between the switching unit and the input unit; And a current bleeding unit connected to the switching unit or the output unit. Here, at least one of the second transistor and the third transistor is a P-MOS transistor.

The amplifier according to the present invention and the frequency mixer using the same may realize a low noise characteristic by implementing a transistor of a switching unit to which an LO signal, which is an oscillation signal, is input as a P-MOS transistor.

In addition, the frequency mixer may implement high gain using a current bleeding unit in which an inductor is connected to a gate terminal of the transistor. While a typical frequency mixer realizes a conversion gain of about 12 Hz, the frequency mixer of the present invention can realize a conversion gain of 25 Hz or more in various frequency bands such as a smartphone frequency band. In particular, the general frequency mixer has a low noise characteristic in order to improve the gain, but the frequency mixer of the present invention may have low noise and low power characteristics while achieving high gain.

1 is a diagram illustrating a circuit structure of a frequency mixer according to a first embodiment of the present invention.
2 is a diagram illustrating a circuit structure of a frequency mixer according to a second embodiment of the present invention.
3 is a diagram showing the circuit configuration of the frequency mixer according to the third embodiment of the present invention.
4 is a diagram illustrating an impedance matching characteristic of a frequency mixer according to an embodiment of the present invention.
5 is a diagram illustrating conversion gain characteristics of a frequency mixer according to an embodiment of the present invention.
6 is a diagram illustrating a noise figure of a frequency mixer according to an embodiment of the present invention.
7 is a circuit diagram of a cascode amplifier according to an embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

The frequency mixer of the present invention is a circuit for converting only the frequency while maintaining the information of the input signal as it is. It can be used as an element to make.

In addition, the amplifier of the present invention and the frequency mixer using the same have low noise, high gain, and low power characteristics as described below, and thus various wireless communication systems requiring such characteristics, for example, space communication systems, Bluetooth, WLAN, mobile communication, etc. It can be used for a terminal.

Hereinafter, various embodiments of the frequency mixer of the present invention will be described with reference to the accompanying drawings.

1 is a diagram illustrating a circuit structure of a frequency mixer according to a first embodiment of the present invention.

Referring to FIG. 1, the frequency mixer of the present embodiment includes an input unit 100, a switching unit 102, an output unit 104, a current bleeding section 106, and an inductor L.

The input unit 100 receives, for example, an RF signal having a specific frequency through an antenna and includes a first transistor M1, for example, an N-MOS transistor. The RF signal is input to the gate terminal of the first transistor M1, and the gain of the frequency mixer may be boosted by the first transistor M1.

The switching unit 102 receives an LO signal as an oscillation signal and generates an IF signal, and includes a second transistor M2 and a third transistor M3 connected in parallel to the power supply unit Vdd. Here, the LO + signal is input to the gate terminal of the second transistor M2 and the LO− signal is input to the gate terminal of the third transistor M3.

According to one embodiment of the present invention, at least one of the second transistor M2 and the third transistor M3 is a P-MOS transistor, preferably both P-MOS transistors. As such, when the transistors M2 and M3 of the switching unit 102 are implemented as P-MOS transistors, noise of the frequency mixer may be reduced. Specifically, since the LO + signal and the LO- signal are completely switched and input to the gate terminals of the transistors M2 and M3, 1 / f noise is lowered.

According to another embodiment of the present invention, the LO + signal and the LO− signal may be input into the bulk of the transistors M2 and M3.

Considering the input unit 100 and the switching unit 102 as a whole, the switching unit 102 is avoided while improving the gain by using the input unit 100 as the N-MOS transistor M1 having a high transconductance characteristic. Implemented with MOS transistors M2 and M3 to reduce noise. As a result, the frequency mixer of the present embodiment can realize low noise while improving the gain.

The output unit 104 includes load resistors R L connected to the transistors M2 and M3 of the switching unit 102, respectively, and outputs an IF + signal and an IF− signal generated by the switching unit 102. Let's do it. Here, the IF + signal and the IF− signal may have a third frequency between a first frequency corresponding to the RF signal and a second frequency corresponding to the LO signal. For example, the frequency mixer converts an RF signal of a first frequency to output an IF signal of a third frequency lower than the first frequency. However, the IF signal includes the same information as the RF signal.

The current bleeding unit 106 is connected between a node n1 that meets the drain terminal of the first transistor M1 and a node n4 where the source terminals of the transistors M2 and M3 meet. As a result, the current output from the power supply unit (power supply voltage terminal Vdd) is branched to the second transistor M2, the current bleeding unit 106 and the third transistor M3 at the node n4. Meanwhile, the current bleeding unit 106 may be implemented in various structures as long as it can branch a current.

Compared with the case where the current bleeding unit 106 is present and the case where the current bleeding unit 106 is not present, when the current bleeding unit 106 is present, the amount of current flowing through the transistors M2 and M3 does not exist. Smaller than otherwise. Therefore, it is possible to largely set than the current-releasing part if 106 is present load resistance load resistor (R L) of the case does not exist, the (R L), the current-releasing section 106. The Here, since the gain of the frequency mixer is proportional to the value of the load resistance R L , the gain of the frequency mixer when the current bleeding unit 106 is present is the gain of the frequency mixer when the current bleeding unit 106 does not exist. It can be higher than the gain. That is, the frequency mixer of this embodiment uses the current bleeding unit 106 to improve the overall conversion gain.

The inductor L is connected between the power supply unit and the node n4 to reduce the noise by preventing a signal from leaking to the power supply unit, and serves to implement a desired use frequency. Of course, a resistor other than an inductor may be used between the power supply unit and the node n4. However, when the resistor is used, leakage of a signal may occur and noise may increase. Therefore, it is efficient to use the inductor L between the power supply unit and the node n4.

In summary, the frequency mixer of the present embodiment implements the transistors M2 and M3 of the switching unit 102 as P-MOS transistors to lower the noise and increase the gain by using the current bleeding unit 106. As a result, the frequency mixer can realize low noise and high gain characteristics. That is, the frequency mixer of the present invention increases the gain by using an amplifier circuit. Of course, an amplifier circuit using an inductor may be used as a separate amplifier as shown in FIG.

2 is a diagram illustrating a circuit structure of a frequency mixer according to a second embodiment of the present invention.

Referring to FIG. 2, the frequency mixer of the present embodiment includes an input unit 200, a switching unit 202, an output unit 204, a current bleeding unit 206, and a second inductor L2.

Since the remaining components except for the current bleeding unit 206 are the same as in the first embodiment, the description of the same components will be omitted.

The current bleeding unit 206 includes a fourth transistor M4, for example, an N-MOS transistor and a first inductor L1.

The drain terminal of the fourth transistor M4 is connected to the node n4 where the transistors M2 and M3 of the switching unit 202 meet, and the source terminal is connected to the drain terminal of the first transistor M1 of the input unit 200. do. As a result, the power output from the power supply unit Vdd flows to the first transistor M1 through the fourth transistor M4.

One end of the first inductor L1 is connected to the gate terminal of the fourth transistor M4, and the other end thereof is connected to, for example, a bias terminal. The first inductor L1 serves to boost the gain. Specifically, the first inductor L1 resonates with the parasitic capacitor Cp generated between the gate terminal and the source terminal of the fourth transistor M4 to boost the gain. In addition, the first inductor L1 also serves to match the input impedance. As a result, since it is not necessary to additionally use an inductor for impedance matching in the input unit 200, it is possible to realize high gain but not increase the overall size of the frequency mixer.

According to an embodiment of the present invention, both the first transistor M1 of the input unit 200 and the fourth transistor M4 of the current bleeding unit 206 may form a cascode structure as N-MOS transistors.

In summary, the frequency mixer of the present embodiment implements high gain and input impedance matching by connecting the first inductor L1 to the gate terminal of the fourth transistor M4 of the current bleeding unit 206. Meanwhile, the first inductor L1 also plays a role of controlling the use frequency of the frequency mixer together with the second inductor L2.

In terms of power, the current flowing through the second transistor M2, the current flowing through the third transistor M3, and the current flowing through the fourth transistor M4 are added together to flow to the first transistor M1. That is, the current is reused in the first transistor M1, and thus the frequency mixer can be implemented at low power.

In terms of noise, the transistors M2 and M3 of the switching unit 202 are implemented as P-MOS transistors to reduce noise. In addition, the sleep is reduced by parasitic capacitors of the transistors M4, M2, and M3 existing in the path through which the RF signal input to the second inductor L2 and the input unit 200 are transmitted. Therefore, the frequency mixer of the present embodiment can be implemented with low noise.

3 is a diagram showing the circuit configuration of the frequency mixer according to the third embodiment of the present invention.

Referring to FIG. 3, the frequency mixer of the present embodiment includes an input unit 300, a switching unit 302, an output unit 304, a current bleeding unit 306, and a second inductor L2.

Since the remaining components except for the switching unit 302 are similar to those in the second embodiment, detailed description of similar components will be omitted.

The switching unit 302 is implemented with a second transistor M2 and a third transistor M3 which are N-MOS transistors. Here, each of the transistors M2 and M3 forms a cascode structure with the first transistor M1 of the input unit 300 to improve gain.

Of course, since the current bleeding unit 306 is implemented as the first inductor L1 connected to the fourth transistor M4 and the gate terminal of the fourth transistor M4 in the frequency mixer of the present embodiment, the gain of the frequency mixer is improved. And the input impedance can be matched.

Hereinafter, the experimental results of the frequency mixer of the present invention will be described in detail with reference to the accompanying drawings. However, the experiment was performed using the frequency mixer of the second embodiment.

4 is a diagram illustrating an impedance matching characteristic of a frequency mixer according to an embodiment of the present invention. In FIG. 4, reference numeral 400 is a graph illustrating impedance matching characteristics when the first inductor L1 is present in the current bleeding unit 206, and reference numeral 402 is an impedance when the first inductor L1 is not present. It is a graph showing the matching characteristics.

Referring to FIG. 4, the frequency mixer of the present embodiment achieves impedance matching at about 7 Hz to about 7.4 Hz as shown in the graph 400, whereas the graph 402 is without the first inductor L1. As shown in Fig. 1, it can be seen that impedance matching is hardly achieved.

In particular, the frequency mixer of this embodiment is sharply curved while having a S11 value of about -10 Hz or less at about 7 Hz to about 7.4 Hz, that is, excellent impedance matching characteristics.

5 is a diagram illustrating conversion gain characteristics of a frequency mixer according to an embodiment of the present invention. In FIG. 5, reference numeral 500 is a graph illustrating conversion gain characteristics when the first inductor L1 is present, and reference numeral 502 is a graph illustrating conversion gain characteristics when the first inductor L1 is not present. .

The frequency mixer of the present invention has a conversion gain of about 27 Hz to about 28 Hz as shown in graph 500, while the frequency mixer without the first inductor L1 has a conversion gain of about 6 Hz. Have Although not shown, a typical frequency mixer has a conversion gain of about 12 Hz at high. That is, it can be seen that the frequency mixer of the present invention has a conversion gain of at least two times that of the general frequency mixer.

6 is a diagram illustrating a noise figure of a frequency mixer according to an embodiment of the present invention.

As shown in Fig. 6, the noise figure of the frequency mixer of the present invention is about 3.5 Hz at the used frequency (about 7 Hz to about 7.4 Hz). Considering that the noise figure of the general frequency mixer is about 10 Hz, it can be seen that the noise figure of the frequency mixer of the present invention is considerably low.

In addition, although not shown, the frequency mixer of the present invention has a power consumption of 3.9 kV with respect to a supply voltage of 1.2 V (voltage of the power supply unit), that is, has a low power characteristic.

4 to 6 summarize the features of the frequency mixer of the present invention, the frequency mixer of the present invention has a low noise and low power characteristics while achieving high gain, and has an excellent impedance matching characteristic.

In addition to the experiments of FIGS. 4 to 6, the experiment was additionally performed in the mobile communication terminal band, and the experimental results are shown in Table 1 below. Of course, inductors with different inductances were used in accordance with the change of the use frequency.

Frequency Impedance Matching Band Conversion gain Noise figure Power consumption 1.8㎓ (3G) 1.75-1.85 26.06-26.12 2.47-2.65 3.5 2.1㎓ (3G) 2.05-2.15 25.00-26.70 2.37-2.30 3.7 2.4-2.48㎓ (WLAN) 2.38-2.47 28.10-30.00 2.60-2.65 3.7

As shown in Table 1, the frequency mixer of the present invention implements a desired frequency band, has a high conversion gain of at least 25 kHz, has a low noise characteristic of 3 kHz or less, and has a low power characteristic of about 3.5 kHz. You can check it.

Referring to FIG. 4 to FIG. 6 and Table 1, the frequency mixer of the present invention may have low noise, low power, and high gain characteristics in various frequency bands (3G band, WLAN band, X band space communication band, etc.). In particular, the frequency mixer of the present invention can realize a considerably higher conversion gain while having a lower noise characteristic than a general frequency mixer.

7 is a diagram illustrating a circuit structure of a cascode amplifier according to an embodiment of the present invention.

Referring to FIG. 7, the cascode amplifier of the present embodiment includes an input unit 700, a gain boosting unit 702, and a second inductor L2.

The input unit 700 is a portion to which an input signal is input, and may include a first transistor M1, for example, an N-MOS transistor.

The gain boosting unit 702 boosts a gain and may be implemented as a second transistor M2, for example, an N-MOS transistor and a first inductor L1.

The second transistor M2 forms a cascode structure with the first transistor M1 to realize a high gain.

For example, the first inductor L1 is connected between the bias terminal and the gate terminal of the second transistor M2, and resonates with the parasitic capacitor Cp of the second transistor M2 to boost the gain. As a result, the boosted signal is output through the output stage.

The second inductor L2 is connected between the power supply unit Vdd and the second transistor M2 to reduce noise by preventing a signal from leaking to the power supply unit and to implement a desired frequency of use.

In summary, the cascode amplifier of the present invention implements high gain by connecting the inductor L1 to the gate terminal of the second transistor M2. Of course, the amplifier circuit of such an amplifier can be used in a frequency mixer as described above.

The embodiments of the present invention described above are disclosed for purposes of illustration, and those skilled in the art having ordinary knowledge of the present invention may make various modifications, changes, and additions within the spirit and scope of the present invention. Should be considered to be within the scope of the following claims.

100 input unit 102 switching unit
104: output unit 106: current bleeding unit
200: input unit 202: switching unit
204: output unit 206: current bleeding unit
300: input unit 302: switching unit
304: output unit 306: current bleeding unit
700: input unit 702: gain boosting unit

Claims (11)

Including a first inductor,
And a bias voltage is input through the first inductor. The method of claim 1, wherein the first inductor is used in the current bleeding unit,
And the first inductor boosts the gain. The method of claim 1, wherein the amplifier,
An input unit to which an RF signal is input;
A power supply for supplying power; And
And a current bleeding unit connected between the input unit and the power unit,
And the current bleeding unit has a transistor connected between the input unit and the power supply unit and an inductor connected to the transistor. The method of claim 1, wherein the amplifier,
An input having a first transistor; And
A switching unit having a second transistor and a third transistor,
The first transistor is an N-MOS transistor, and the second transistor and the third transistor are P-MOS transistors. The method of claim 4, wherein the amplifier is a frequency mixer,
An output unit connected to the switching unit; And
And a current bleeding unit having a fourth transistor and the first inductor connected to a gate terminal of the fourth transistor.
The second transistor, the third transistor, and the fourth transistor are connected in parallel to a power supply, and the first inductor resonates with a parasitic capacitor formed in the fourth transistor to boost the conversion gain of the frequency mixer. Amplifier. 6. The amplifier of claim 5, wherein the amplifier further comprises a second inductor connected between a power supply unit and a node where the second transistor, the third transistor, and the fourth transistor meet each other, and the output unit includes the second transistor and the first transistor. And a first load resistor connected between the transistors, and a second load resistor connected between the third transistor and the first transistor, wherein a drain terminal of the first transistor includes the second transistor, the third transistor, and the third transistor. An amplifier connected to a node where four transistors meet, wherein the first transistor and the fourth transistor form a cascode structure. The method of claim 1, wherein the amplifier,
An input having a first transistor;
A gain boosting unit having a second transistor connected in series with the first transistor and boosting a gain; And
An output unit connected to one end of the second transistor,
The first inductor is connected to a gate terminal of the second transistor, and the first transistor and the second transistor each have a cascode structure as an N-MOS transistor, and between a power supply unit and a drain terminal of the second transistor. And an inductor coupled to each other, wherein the first inductor is coupled between a gate terminal and a bias terminal of the second transistor. An input having a first transistor;
A switching unit having a second transistor and a third transistor;
An output unit connected between the switching unit and the input unit; And
Including a current bleeding unit connected to the switching unit or the output unit,
At least one of the second transistor and the third transistor is a P-MOS transistor. The frequency mixer of claim 8, wherein the current bleeding unit includes a first inductor for boosting a gain. The method of claim 8, wherein the frequency mixer,
Further comprising a current bleeding unit having a fourth transistor and a first inductor connected to a gate terminal of the fourth transistor,
And the first inductor resonates with a parasitic capacitor formed in the fourth transistor to boost the conversion gain of the frequency mixer. The method of claim 10, wherein the frequency mixer,
And a second inductor connected between a power supply unit and a node where the second transistor, the third transistor, and the fourth transistor meet each other.
The second transistor, the third transistor, and the fourth transistor are connected to each other in parallel with respect to the second inductor, and the drain terminal of the first transistor includes the second transistor, the third transistor, and the fourth transistor. And a first transistor and a fourth transistor, each of which is an N-MOS transistor.
KR1020110095148A 2011-09-21 2011-09-21 Amplifier for boosting gain and frequency mixer using the same KR20130031522A (en)

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