KR20130027358A - Driver ic and fabricating method the same - Google Patents

Driver ic and fabricating method the same Download PDF

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Publication number
KR20130027358A
KR20130027358A KR1020110090890A KR20110090890A KR20130027358A KR 20130027358 A KR20130027358 A KR 20130027358A KR 1020110090890 A KR1020110090890 A KR 1020110090890A KR 20110090890 A KR20110090890 A KR 20110090890A KR 20130027358 A KR20130027358 A KR 20130027358A
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KR
South Korea
Prior art keywords
driver
wafer substrate
resin
manufacturing
substrate
Prior art date
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KR1020110090890A
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Korean (ko)
Inventor
서승표
이용관
Original Assignee
엘지디스플레이 주식회사
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Priority to KR1020110090890A priority Critical patent/KR20130027358A/en
Publication of KR20130027358A publication Critical patent/KR20130027358A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H01L2021/60007—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process
    • H01L2021/60022—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process using bump connectors, e.g. for flip chip mounting

Abstract

PURPOSE: A driver IC and a manufacturing method thereof are provided to increase the strength of the driver IC by forming a coating layer made of resin materials on the upper side of the driver IC after a polishing process. CONSTITUTION: A wafer substrate(10b) with a circuit pattern on a first surface is transferred to equipment(30). An electrode(21) is formed on the circuit pattern. A second surface of the wafer substrate is polished by using a rotating spindle(35). The polished surface of the wafer substrate is coated. The wafer substrate is cut into a unit driver IC(25a). The driver IC is extracted.

Description

Driver IC and its manufacturing method {DRIVER IC AND FABRICATING METHOD THE SAME}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a driver IC, and more particularly, to a driver IC and a method of manufacturing the same, which are surface-treated to enhance the durability of the driver IC and to facilitate laser marking. It is about.

A flat panel display (FPD) replaces a conventional cathode ray tube (CRT) display device, and not only monitors of desktop computers, but also reduces the size and weight of portable computers such as laptop computers, PDAs, and mobile phone terminals. It is an electronic information display device which is essential for implementing the system. Currently commercially available flat panel display devices include liquid crystal displays (LCDs), plasma display panels (PDPs), organic light emitting diodes (OLEDs), and the like.

The flat panel display device includes a display panel for realizing an image by driving a plurality of signal lines and switching devices provided at intersections thereof, and a driver IC for controlling the image.

Bonding methods for electrically connecting the above-described driver IC and the display panel include a tab automated bonding (TAB) or a chip on glass (COG). Tab (TAB) is a method in which a driving integrated circuit is mounted in a tape carrier package (TCP) and the TCP is bonded to a pad of a display panel, and chip on glass (COG) bonds a driver IC directly to a pad of a display panel. to be. The chip-on-glass method (COG) is suitable as a control element of a display panel of a mobile device by omitting a separate flexible cable and mounting the driver IC directly on the display panel.

1 is a diagram illustrating a manufacturing process of a conventional chip-on-glass driver IC.

As shown, the manufacturing process of the conventional driver IC is sequentially carried out step (S10), bump (gold bump) step (S20), back grinding step (S30), sawing step (S40) And a pick / placing step (S50).

The carrying out process (S10) is a process of transferring a silicon wafer substrate having a predetermined circuit pattern constituting a predetermined driving circuit through a transfer device into a manufacturing facility.

The bump process S20 is a step of forming an electrode bonded to the pad of the display panel on the transferred wafer substrate. In this case, a metal such as gold or copper having good electrical resistivity may be used as the electrode.

The back grinding process (S30) is a process of implementing a thin driver IC by grinding (grinding / polishing) the back surface of the wafer substrate on which the electrode is formed to minimize the thickness thereof.

The sawing process S40 is a process of cutting the polished wafer substrate into one unit driver IC.

The take-out process (S50) is a process of taking out and packaging the cut driver IC, and the extracted driver IC displays only the lot no. In the take-out state without going through the normal IC package process and displays it as it is. Bonded to the panel.

However, as shown in FIG. 2, the driver IC manufactured according to the above-described process is gradually processed into a thinner shape according to the trend of light and short size of the mobile device, and the driver during the aforementioned back grinding process after the electrode 21 bump process. The thickness w of the IC 20 is polished thinner and thinner. As a result, the strength is significantly lowered, and breakage is often caused by a force f applied from the outside.

In addition, as the thickness of the driver IC 20 decreases, physical stiffness is weakened, and external force is applied during laser marking of the lot number for the IC on the opposite side of the electrode 21. The problem is caused that the damage is received.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-described problems, and provides a driver IC and a method of manufacturing the same to realize a thinner thickness of the thin driver IC bonded to the flat panel display by a chip-on-glass method. The purpose is to provide.

In order to achieve the above object, a method of manufacturing a driver IC according to a preferred embodiment of the present invention, the step of transferring a wafer substrate formed of a circuit pattern on the first surface into the equipment; Forming an bump on the circuit pattern; Grinding / polishing the second side of the wafer substrate; Coating a polishing surface of the wafer substrate; Cutting the wafer substrate into unit driver ICs; And taking out the driver IC.

The coating of the polishing surface of the wafer substrate may include applying and curing a resin material on the polishing surface of the wafer substrate using a spin coater.

The resin material is ABS resin (Acrylonitrile Butadiene Styrene), AS resin (Acrylonitrile Styrene), cellulose acetate (Cellullose Acetate), cellulose acetate butyrate, cellulose acetate propionate (Cellullose Acetate Propionate), nitro cellulose (Cellullose Acetate Propionate) Cellullose Nitrate, Cellulose Propionate, Ethyl Cellullose, Epoxy Plastics, Melamine Formaldehyde Resin, Polyamide, Polycarbonate, Polychloro / Trichloroethylene (Polychloro Trifluoro Ethylene) and polyethylene (Polyethylene), characterized in that any one selected.

Coating and curing the resin material on the polishing surface of the wafer substrate using a spin coater may include: loading the wafer substrate into the spin coater and adsorbing the spin chuck to the spin chuck; Sealing the spin coater; Applying a liquid resin raw material onto the wafer substrate; Rotating the wafer; And taking the wafer out of rotation and taking out the spin coater.

Coating the polishing surface of the wafer substrate is characterized in that the adhesive tape is attached to the polishing surface of the wafer substrate.

The adhesive tape, the base layer; An adhesive layer laminated on one surface of the base layer; And a protective layer laminated on one surface of the adhesive layer.

The base layer is characterized in that the polyolefin (Polyolefin) material.

After extracting the driver IC, the method may further include writing a lot number using a laser marker on the surface of the resin material coated thereon.

In order to achieve the above object, a driver IC according to a preferred embodiment of the present invention, a substrate having a circuit pattern formed on the first surface; It includes an electrode (bump) formed on top of the circuit pattern, characterized in that the resin material is coated on the second surface of the substrate.

According to a preferred embodiment of the present invention, during the manufacturing process of the driver IC to be applied to the flat panel display device, after the polishing process for thinly processing the thickness of the driver IC, by further performing a resin coating film forming process on the upper surface of the driver IC, The stiffness of the driver IC can be increased, and the ultra-thin driver IC with high durability can be realized by supporting the external force generated during lot number marking.

1 is a diagram illustrating a manufacturing process of a conventional chip-on-glass driver IC.
2 is a diagram showing the structure of a conventional driver IC.
3A to 3F illustrate a method of manufacturing a driver IC according to an exemplary embodiment of the present invention.
4 is a cross-sectional view showing the overall structure of a wafer spin coater according to an embodiment of the present invention.
5A and 5B illustrate the structure of a driver IC manufactured by a method of manufacturing a driver IC according to an embodiment of the present invention.
6 is a diagram illustrating an example in which a driver IC of the present invention is bonded to a liquid crystal panel.

Hereinafter, a driver IC and a method of manufacturing the same according to a preferred embodiment of the present invention will be described with reference to the accompanying drawings. The drawings referred to with respect to the following embodiments are not intended to limit the shape and position of the components to the illustrated form, and in particular, in order to help the understanding of the structure and shape that are technical features of the present invention, The scale is exaggerated or reduced.

3A to 3F illustrate a method of manufacturing a driver IC according to an exemplary embodiment of the present invention.

As shown, the manufacturing process of the driver IC of the present invention is sequentially carried out step (Fig. 3a), bump (gold bump) step (Fig. 3b), back grinding step (Fig. 3c), resin coating (resin) a coating step (FIG. 3D), a sawing step (FIG. 3E) and a pick / place step (FIG. 3F).

In detail, the carrying out step (FIG. 3A) is performed by transferring the silicon wafer substrate 10 on which the circuit pattern for the driver IC is completed by a photolithography process or the like into a bump fabrication facility by using a transfer device. This step is to transfer.

According to this process, each die 20 on the wafer substrate 10 is formed with a circuit pattern for one unit driver IC.

The bump step (FIG. 3B) is to maintain the electrical characteristics of the circuit formed on the transferred wafer substrate, the electrode 21 portion to be electrically connected to the display panel on the circuit pattern in the state of the wafer substrate 10a Forming a step. In this case, a metal such as aluminum, copper, or gold having good electrical conductivity may be used as the electrode. The die 25 serving as each driver IC has the same thickness W1 as the original semiconductor wafer substrate 10.

The back grinding step (FIG. 3C) is a step of implementing a thin driver IC 25a by grinding (grinding / polishing) the back surface of the wafer substrate 10a on which the electrode 21 is formed and minimizing its thickness (W2). Typically, the semiconductor wafer substrate 10 is made relatively thick to prevent breakage that may occur during its previous fabrication operations, and is polished back to improve thermal loads and produce thin driver ICs 25a. .

In the back grinding step (c), the wafer 10b is fixed on the rotating chuck 31 of the backside processing equipment 30 so that the back side faces upwards, and the wafer is rotated using the rotating spindle 35. The back side of 10b) is processed.

The resin coating step (FIG. 3D) is a step of applying and coating a resin-based material on the polished back surface of the wafer substrate 10b. In such a resin coating step, a photo resist spin coater 101 device used for forming a wafer pattern may be used as it is, and a detailed description of the resin coating step using the spin coater 101 will be described later. .

This resin coating step (FIG. 3D) is a synthetic resin (synthetic resin), the tensile strength and impact strength is excellent, the electrical insulation is excellent, the synthetic resin of the material that is easy to metallization using chemical plating on the surface should be selected.

Such synthetic resins include ABS resin (Acrylonitrile Butadiene Styrene), AS resin (Acrylonitrile Styrene), cellulose acetate (Cellullose Acetate), cellulose acetate butyrate, cellulose acetate propionate, nitro cellulose Nitrate, Cellulose Propionate, Ethyl Cellullose, Epoxy Plastics, Melamine Formaldehyde Resin, Polyamide, Polycarbonate, Polychloro / Trichloro Among ethylene (Polychloro Trifluoro Ethylene) and polyethylene (Polyethylene), any one may be used, but considering the heat resistance, impact resistance and moldability of acrylonitile, butadiene and ABS resin which is a compound is preferably used, The non-crystalline material consisting of an organic compound and a derivative thereof may be used. However, natural polymer or synthetic polymer compound is excluded because it does not have an effect of improving the rigidity in nature.

The sawing step (FIG. 3E) is a step of cutting the resin substrate on one surface of the wafer substrate 10c into one unit driver IC. In the sawing step e, a die cutter 50 with diamond blades can be used, and before cutting the wafer substrate 10c must be removed from the cassette and stably positioned on the adhesive film of the fixed frame. This adhesive film must be fixed in place once all chips are cut.

When cutting, DI water is sprayed, and a diamond blade having a circumference of 25 μm is rotated at 20000 rpm to be cut in a constant direction in the x and y directions to be separated by a unit driver IC.

The drawing step (FIG. 3F) is a step of taking out the cut unit driver IC, and the extracted driver IC is attached to the lead frame in the extraction state without going through a normal IC package process, and then the lot no. Only the address is written and bonded to the display panel as it is.

According to the above-described steps, according to the manufacturing method of the driver IC of the present invention, after the thin grinding process, by coating the resin material on the back of the wafer, the rigidity of each driver IC can be improved, and the lot number (lot) of the laser marking method no.) The writing process can be performed easily.

Hereinafter, a structure of a spin coater for resin coding the back surface of a semiconductor wafer substrate in a method of manufacturing a driver IC according to a preferred embodiment of the present invention will be described with reference to the drawings.

4 is a cross-sectional view showing the overall structure of a wafer spin coater according to an embodiment of the present invention.

As illustrated, the spin coater 101 according to an embodiment of the present invention is an outer cup in which a resin coating process is performed by applying a resin raw material and rotating the wafer substrate 100 seated therein. 102 and inner cup 103, a spin chuck 105 mounted inside the inner cup 103 to support and fix the wafer substrate 100, and disposed thereon And an outer cover 107 and an inner cover 106 that are coupled to the outer cup 102 and the inner cup 103 by moving up and down.

In detail, the outer cup 102 is a circular cup structure in which an upper portion of the outer cup 102 is opened to draw in and take out a semiconductor wafer, and a lower portion of the outer cup 102 is closed to form the outer appearance of the spin coater 101.

Like the outer cup 102, the inner cup 103 has a cup structure in which an upper part is opened and a lower part is closed, and is mounted in a rotatable form in the outer cup 102. In this structure, the inner surface of the outer cup 102 and the outer surface of the inner cup 103 are spaced apart from each other by a predetermined distance, and a groove 109 is formed therebetween, in which waste liquid of the resin raw material is collected.

The spindle 104 is connected to the externally provided motor 140 through the outer cup 102 and the inner cup 103 described above, and the spin chuck 105 is coupled to the spindle 104 to be connected to the inner cup 103. ) It is mounted inside. The spin chuck 105 is a part for seating and fixing the wafer substrate 100 to which the resin raw material is applied, and a vacuum hole (not shown) for adsorbing the wafer substrate 100 is formed thereon.

The inner cover 106 is fixed to the outer cover 107 and is disposed on the opening area of the inner cup 103, which seals the inner cup 103 by moving up and down when applying the resin raw material. In addition, in the same manner, the outer cover 107 is disposed on the opening area of the outer cup 102 to seal the outer cup 102. The inner cover 106 and the outer cover 107 are configured to be elevated in one piece.

Accordingly, the spin chuck 105 is rotated so that the resin liquid applied onto the wafer substrate 100 sticks out of the substrate, and the resin liquid passes through the inner cup 103 and is below the edge of the outer cup 102. It is collected in the groove 109 formed in the. Although not shown, the collected resin solution is transported and disposed of by the waste liquid collection member (not shown) as waste liquid.

Hereinafter, a resin coating process using a wafer substrate spin coater according to an exemplary embodiment of the present invention will be described with reference to the accompanying drawings.

First, when the wafer substrate 100 on which the back gliding process is completed is loaded into the spin coater 100 and disposed on the spin chuck 105, the spin chuck 105 is formed by a vacuum hole provided therein. 100). Thereafter, the inner cover 106 and the outer cover 107 are integrally moved downward to seal the inner cup 105 and the outer cup 102, respectively. Next, a liquid resin raw material is applied to the upper part of the substrate fixed on the spin chuck 105 through a resin supply nozzle (not shown).

Subsequently, when the motor 140 is driven to rotate the spindle 104 mechanically connected to the motor, the spin chuck 105 coupled to the spindle 104 and the wafer substrate 100 adsorbed thereon also rotate, and the wafer The resin solution dropped on the upper portion of the substrate 100 is evenly spread outward from the center of the upper surface of the wafer substrate 100 by centrifugal force. At this time, the resin liquid which is not dropped onto the wafer substrate 100 by the high-speed rotation of the motor 140 but sticks out of the substrate 100 passes through the inner cup 103 and is collected into the groove 109 of the outer cup 102. do.

Next, when the resin coating is completed, the driving of the motor 140 is stopped to stop the rotation of the spindle 104 and the spin chuck 105, the inner cover 106 and the outer cover 107 is moved up and down to the outer When the cup 102 is opened, the wafer substrate 100 is transferred to the sawing process line, which is the next process, by the transfer means.

In addition, when the wafer substrate 100 is taken out, a process of recovering the waste liquid contained in the groove 109 of the outer cup 102 by a waste liquid collection member (not shown) may be further included.

As described above, the resin coating process of the driver IC manufacturing process of the present invention can improve the rigidity of the wafer substrate by coating the resin on the back surface of the semiconductor wafer substrate subjected to the back grinding process using a spin coater.

5A and 5B illustrate the structure of a driver IC manufactured by a method of manufacturing a driver IC according to an embodiment of the present invention.

As shown, the driver IC 250 of the present invention is formed on one surface of the electrode 251 by the bump process, and the resin coating film 253 by the stain coating process is formed on the opposite side.

The resin coating film 253 described above is an ABS resin material having advantages of heat resistance, impact resistance, and moldability, and supports the driver IC 250 from external force and maintains rigidity. In particular, the driver IC 250 is protected from heat generated when the lot number 255 is written by the laser marking process according to the above-described reinforcement of heat resistance.

In addition, the method of attaching an adhesive tape may be applied instead of the resin coating method using the spin coater described above.

In detail, the step of FIG. 3D is omitted and replaced by the step of attaching an adhesive tape for rigid maintenance to the back of the wafer substrate on which the polishing process (FIG. 3C) is completed.

As the adhesive tape described above, a tape obtained by sequentially stacking a base film layer, an adhesive layer, and a protective layer may be used. The base film layer may be a polyolefin, the adhesive layer may be an acrylic adhesive, and the protective layer may be polyethylene terephthalate (PET). Can be configured.

In the coating process using the adhesive tape, the adhesive tape from which the protective layer is removed on the back surface of the wafer substrate on which the back polishing is completed is attached to the driver IC 250 through a thermal or UV pressing process. The chipping of the substrate can be prevented, and there is an advantage that no additional equipment is required to perform the resin coating process.

Hereinafter, an example in which a driver IC manufactured according to an exemplary embodiment of the present invention is applied to a flat panel display will be described with reference to the accompanying drawings. In the following description, an example applied to a liquid crystal display device suitable for a mobile flat panel display device will be described. However, the application target is not limited to the liquid crystal panel.

6 is a diagram illustrating an example in which a driver IC of the present invention is bonded to a liquid crystal panel. As shown, the driver IC 250 of the present invention is bonded to one end of the liquid crystal panel 200 by a chip-on glass (COG) method.

In detail, the liquid crystal panel 200 is a display panel that realizes an image by driving a plurality of signal lines and switching elements provided at intersections thereof, and the driver IC 250 includes a plurality of driving circuits for controlling the image. It is an integrated chip.

The liquid crystal panel 200 is a structure in which the lower substrate 210 and the upper substrate 220 are bonded to each other by a predetermined distance, and a liquid crystal layer is interposed between the substrates 210 and 220. The display area is divided into an active area AA and a non-active area NA in which driver ICs are electrically connected to the outside of the display area AA. In the display area AA, a plurality of gate wirings formed in one direction and a plurality of data wirings formed in a direction perpendicular to the gate wirings are arranged, and a thin film transistor as a switching element is formed at an intersection to define a pixel region. do.

In the non-display area NA, pads are electrically connected to the gate line and the data line of the display area AA and to which the driver IC 250 and the flexible circuit board are bonded.

The driver IC 250 drives the liquid crystal panel 200 by applying a control signal and an image signal through signal wiring of the liquid crystal panel 200. The driver IC 250 is manufactured in the form of a conventional chip and is electrically connected to the pad 35 described above on the non-display area NA of the lower substrate 210.

In particular, the driver IC 250 is not electrically connected to the liquid crystal panel 200 through a separate flexible substrate or the like in a chip-on-glass (COG) manner, and each electrode of the driver IC 250 may be a lower substrate ( Bonded directly on the pad of 210 to bond the laser mark portion 255 upwards. Here, a separate signal transmission and reception means for connecting to an external system is required, and although not shown, the liquid crystal panel 200 having the above-described structure may be further bonded to a flexible circuit board (not shown). Through this, the driver IC 250 is connected to an external system and a power supply to receive power and various control signals required for driving.

Therefore, a thin driver IC resistant to external force and a liquid crystal panel applied to the ultra-small mobile device can be realized.

Many details are set forth in the foregoing description but should be construed as illustrative of preferred embodiments rather than to limit the scope of the invention. Therefore, the invention should not be construed as limited to the embodiments described, but should be determined by equivalents to the appended claims and the claims.

250: driver IC 251: electrode
253: resin coating film 255: laser marker (laser maker)

Claims (9)

Transferring the wafer substrate having the circuit pattern formed on the first surface into the equipment;
Forming an bump on the circuit pattern;
Grinding / polishing the second side of the wafer substrate;
Coating a polishing surface of the wafer substrate;
Cutting the wafer substrate into unit driver ICs; And
Taking out the driver IC
Method for manufacturing a driver IC comprising a. The method of claim 1,
Coating the polishing surface of the wafer substrate,
And applying and curing a resin material on the polished surface of the wafer substrate using a spin coater. The method of claim 2,
The above-
ABS resin (Acrylonitrile Butadiene Styrene), AS resin (Acrylonitrile Styrene), cellulose acetate (Cellullose Acetate), cellulose acetate butyrate, cellulose acetate propionate, nitro cellulose (Cellullose cellulose Nitrate) Propionate (Cellullose Propionate), Ethyl Cellullose, Epoxy Plastics, Melamine Formaldehyde Resin, Polyamide, Polycarbonate, Polychloro / trichloroethylene A method for manufacturing a driver IC, characterized in that any one selected from trifluoro ethylene and polyethylene. The method of claim 2,
The step of applying and curing the resin material on the polishing surface of the wafer substrate using the spin coater,
Loading the wafer substrate into a spin coater and adsorbing the spin chuck;
Sealing the spin coater;
Applying a liquid resin raw material onto the wafer substrate;
Rotating the wafer; And
Removing the wafer from the spin stop and the spin coater
Method of manufacturing a driver IC comprising a. The method of claim 1,
Coating the polishing surface of the wafer substrate,
And attaching an adhesive tape to the polishing surface of the wafer substrate. The method of claim 5, wherein
The adhesive tape,
Base layer;
An adhesive layer laminated on one surface of the base layer; And
Protective layer laminated on one surface of the adhesive layer
A method of manufacturing a driver IC, characterized in that consisting of. The method according to claim 6,
The base layer is a manufacturing method of a driver IC, characterized in that the polyolefin (Polyolefin) material. The method of claim 1,
After taking out the driver IC,
Filling in a lot number using a laser marker on the surface coated with the resin material
Method for manufacturing a driver IC, characterized in that it further comprises. A substrate on which a circuit pattern is formed on a first surface;
An electrode formed on top of the circuit pattern,
And a resin material coated on the second surface of the substrate.
KR1020110090890A 2011-09-07 2011-09-07 Driver ic and fabricating method the same KR20130027358A (en)

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KR1020110090890A KR20130027358A (en) 2011-09-07 2011-09-07 Driver ic and fabricating method the same

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0926586A (en) * 1995-07-11 1997-01-28 Hitachi Ltd Liquid crystal display device
KR20110074469A (en) * 2009-12-24 2011-06-30 닛토덴코 가부시키가이샤 Film for flip chip type semiconductor back surface

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0926586A (en) * 1995-07-11 1997-01-28 Hitachi Ltd Liquid crystal display device
KR20110074469A (en) * 2009-12-24 2011-06-30 닛토덴코 가부시키가이샤 Film for flip chip type semiconductor back surface

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